Polishing liquid, polishing method, component manufacturing method, and semiconductor component manufacturing method

Abstract

This polishing solution is for polishing a resin-containing polishing target member and contains an ether compound having a hydroxy group, and abrasive grains containing cerium oxide. This polishing method is for polishing a resin-containing polishing target member by using the polishing solution. This component manufacturing method is for obtaining a component by using the polishing target member polished by the polishing method. This semiconductor component manufacturing method is for obtaining a semiconductor component by using the polishing target member polished by the polishing method.

Description

[Technical Field]

[0001] The present disclosure relates to a polishing liquid, a polishing method, a method for manufacturing a component, a method for manufacturing a semiconductor component, and the like. [Background technology]

[0002] In recent years, processing technologies for achieving higher density and miniaturization have become increasingly important in the manufacturing process of electronic devices. CMP (Chemical Mechanical Polishing), one of the processing technologies, is essential in the manufacturing process of electronic devices for forming shallow trench isolation (STI), planarizing pre-metal insulating materials or interlayer insulating materials, and forming plugs or buried metal wiring. Known polishing solutions used in CMP include those containing abrasive grains containing cerium oxide (see, for example, Patent Documents 1 and 2 listed below). [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Publication No. 10-106994 [Patent Document 2] Japanese Patent Application Publication No. 08-022970 Summary of the Invention [Problem to be solved by the invention]

[0004] A polishing liquid that can be used in CMP is sometimes required to polish and quickly remove a resin-containing polished member, and for such a polishing liquid, it is required to improve the polishing rate of the resin-containing polished member.

[0005] One aspect of the present disclosure is to provide a polishing liquid capable of improving the polishing rate of a resin-containing polished member. Another aspect of the present disclosure is to provide a polishing method using the polishing liquid. Another aspect of the present disclosure is to provide a method for manufacturing a component using the polishing method. Another aspect of the present disclosure is to provide a method for manufacturing a semiconductor component using the polishing method. [Means for solving the problem]

[0006] In some aspects, the present disclosure relates to the following [1] to

[19] , etc. [1] A polishing liquid for polishing a resin-containing member to be polished, which contains abrasive grains containing cerium oxide and an ether compound having a hydroxy group. [2] The polishing liquid according to [1], wherein the ether compound contains an alkoxy alcohol. [3] The polishing liquid according to [2], wherein the ether compound contains an alkoxy alcohol having a molecular weight of less than 200. [4] The polishing liquid according to [2] or [3], wherein the alkoxy alcohol contains a compound having an alkoxy group having 1 to 5 carbon atoms. [5] The polishing liquid according to any one of [2] to [4], wherein the alkoxy alcohol includes 1-propoxy-2-propanol. [6] The polishing liquid according to any one of [2] to [5], wherein the alkoxy alcohol contains 3-methoxy-3-methyl-1-butanol. [7] The polishing liquid according to any one of [2] to [6], wherein the content of the alkoxy alcohol is 0.2 to 0.8 mass % based on the total mass of the polishing liquid. [8] The polishing liquid according to any one of [1] to [7], wherein the ether compound contains a polyether. [9] The polishing liquid according to [8], wherein the polyether contains polyglycerin.

[10] The polishing liquid according to [8] or [9], wherein the content of the polyether is 0.5 to 3 mass % based on the total mass of the polishing liquid.

[11] The polishing liquid according to any one of [1] to

[10] , wherein the content of the abrasive grains is 0.5 to 2 mass % based on the total mass of the polishing liquid.

[12] The polishing liquid according to any one of [1] to

[11] , further comprising an organic acid component.

[13] The polishing liquid according to any one of [1] to

[12] , further containing at least one selected from the group consisting of ammonium cations and ammonia.

[14] The polishing liquid according to any one of [1] to

[13] , which has a pH of 9.00 to 11.00.

[15] A polishing method, comprising polishing a resin-containing member to be polished using the polishing liquid according to any one of [1] to

[14] .

[16] The polishing method according to

[15] , wherein the resin comprises an epoxy resin.

[17] The polishing method according to

[15] or

[16] , wherein the polished member further contains particles containing silicon oxide.

[18] A method for manufacturing a part, comprising obtaining a part using a polished member polished by the polishing method according to any one of

[15] to

[17] .

[19] A method for producing a semiconductor component, comprising obtaining a semiconductor component using a polished member polished by the polishing method according to any one of

[15] to

[17] . [Effects of the Invention]

[0007] According to one aspect of the present disclosure, it is possible to provide a polishing liquid capable of improving the polishing rate of a resin-containing member to be polished. According to another aspect of the present disclosure, it is possible to provide a polishing method using the polishing liquid. According to another aspect of the present disclosure, it is possible to provide a method for manufacturing a component using the polishing method. According to another aspect of the present disclosure, it is possible to provide a method for manufacturing a semiconductor component using the polishing method. According to another aspect of the present disclosure, it is possible to provide application of a polishing liquid to polishing a resin-containing member to be polished. [Brief explanation of the drawings]

[0008] [Figure 1] FIG. 1 is a cross-sectional view schematically illustrating an example of a member to be polished. DETAILED DESCRIPTION OF THE INVENTION

[0009] Hereinafter, embodiments of the present disclosure will be described, but the present disclosure is not limited to the following embodiments.

[0010] In this specification, numerical ranges indicated with "to" indicate a range that includes the numerical values before and after "to" as the minimum and maximum values, respectively. A numerical range "A or greater" means a range exceeding A and A. A numerical range "A or less" means a range less than A and A. In numerical ranges described in stages in this specification, the upper or lower limit of a certain numerical range can be arbitrarily combined with the upper or lower limit of another numerical range. In numerical ranges described in this specification, the upper or lower limit of the numerical range may be replaced with a value shown in the examples. "A or B" may include either A or B, or both. Unless otherwise specified, the materials exemplified in this specification can be used alone or in combination of two or more. When multiple substances corresponding to each component are present in the composition, the content of each component in the composition refers to the total amount of the multiple substances present in the composition, unless otherwise specified. The term "film" encompasses structures that are formed over the entire surface as well as structures that are formed only partially when observed in a plan view. The term "process" does not only refer to an independent process, but also includes processes that cannot be clearly distinguished from other processes as long as the intended effect of the process is achieved. "Alkyl groups" may be linear, branched, or cyclic unless otherwise specified. "Abrasive grains" refers to a collection of multiple particles, but for convenience, each particle that makes up an abrasive grain may be referred to as an abrasive grain.

[0011] <Polishing liquid> The polishing liquid according to this embodiment is a polishing liquid for polishing a resin-containing member, containing abrasive grains containing cerium oxide and an ether compound having a hydroxy group (hereinafter sometimes referred to as "ether compound A"). The polishing liquid according to this embodiment can be used as a CMP polishing liquid.

[0012] The polishing liquid according to this embodiment can improve the polishing rate of a resin-containing workpiece, achieving a polishing rate exceeding 0.40 μm / min, as determined by the evaluation method described in the Examples below. Examples of resins include epoxy resins, phenolic resins, acrylic resins, methacrylic resins, novolac resins, polyesters (unsaturated polyesters and polyesters other than unsaturated polyesters), polyimides, polyamideimides, polyhydroxystyrenes, polybenzoxazoles (PBOs), polybenzoxazole precursors, polyallyl ethers, and heterocycle-containing resins (excluding the resins listed above). Examples of "heterocycle-containing resins" include pyrrole ring-containing resins, pyridine ring-containing resins, and imidazole ring-containing resins. The workpiece may contain at least one of these resins as a primary component. The workpiece may contain at least one resin selected from the group consisting of epoxy resins, polyimides, polybenzoxazoles, and polybenzoxazole precursors.

[0013] The factors that improve the polishing rate of a resin-containing polished member are not entirely clear, but the present inventors speculate that they are as follows: The use of an ether compound having a hydroxy group (ether compound A) improves the wettability of the polished surface where the resin is present. Furthermore, because the abrasive grains containing cerium oxide are relatively soft, the abrasive grains can efficiently penetrate into the resin without sliding on the resin surface. These factors are thought to improve the polishing rate of a resin-containing polished member. However, the factors that produce this effect are not limited to these.

[0014] According to one aspect of the polishing liquid of this embodiment, the polishing rate of metal materials can also be improved. Examples of metals in the metal materials include copper, cobalt, tantalum, aluminum, titanium, tungsten, and manganese. Examples of metal materials include wiring materials and barrier metal materials. Examples of metal materials include copper-based metals (metallic copper (single metal), copper compounds, etc.), cobalt-based metals (metallic cobalt (single metal)), tantalum-based metals (metallic tantalum (single metal)), tantalum nitride, etc.), aluminum-based metals (metallic aluminum (single metal)), titanium-based metals (metallic titanium (single metal)), titanium nitride, etc.), tungsten-based metals (metallic tungsten (single metal)), and manganese-based metals (metallic manganese (single metal)). According to one aspect of the polishing liquid of this embodiment, a copper polishing rate of, for example, 0.05 μm / min or more (preferably 0.35 μm / min or more) can be obtained in the evaluation described in the Examples below.

[0015] In recent years, the development of 2.1D integrated circuits, 2.5D integrated circuits, 3D integrated circuits, and the like has been progressing in order to increase the speed, power consumption, and capacity of electronic devices. This has led to growing interest in chip-to-chip, wafer-to-wafer, and chip-to-wafer connection processes, as well as semiconductor package manufacturing processes using wafer-level packaging (WLP) and panel-level packaging (PLP). In these processes, the polished surface of the workpiece, which must be planarized to obtain a good connection surface (here, the term "connection surface" refers not only to the surface that is directly connected but also to the surface that serves as the base when connecting via another member), may contain a resin (e.g., epoxy resin) and a metal material (e.g., copper-based metal). For example, the polished workpiece may include a base portion containing a resin and a metal portion containing a metal material and disposed in an opening formed in the base portion (an opening extending in the thickness direction of the polished workpiece (thickness direction of the base portion)). The polished member may also include a metal portion that extends in the thickness direction of the polished member (thickness direction of the substrate portion) and contains a metal material, and a substrate portion (substrate portion containing a resin) that covers at least a portion (partial or all) of the outer periphery of the metal portion. The polished member may include at least one metal portion (for example, multiple metal portions). The polished member may be obtained by supplying the constituent material of the metal portion to an opening formed in the substrate portion, or by supplying the constituent material of the substrate portion so as to cover at least a portion of the outer periphery of the metal portion.

[0016] According to one aspect of the polishing liquid of this embodiment, as a polishing liquid used for polishing a member containing a resin (e.g., epoxy resin) and a metal material (e.g., copper-based metal), it is possible to improve the polishing speed of the member containing the resin and the metal material, for example, it is possible to improve the polishing speed of the polished surface where the resin and the metal material exist in the above-mentioned polishing member having a base part and a metal part. With such a polishing liquid, it is possible to suitably smooth the above-mentioned polished surface where the resin and the metal material exist.

[0017] Furthermore, resins (e.g., epoxy resins) and silicon compounds (compounds containing silicon, such as silicon oxides) may be present on the polished surface of the polished member. For example, the substrate of the polished member having a substrate and a metal portion may contain particles containing silicon compounds, resulting in the presence of resins, silicon compounds, and metal materials on the polished surface. In contrast, according to one aspect of the polishing liquid of this embodiment, a polishing liquid used to polish a polished member containing a resin (e.g., epoxy resin) and a silicon compound (e.g., silicon oxide) can improve the polishing rate of the polished member containing a resin and a silicon compound. For example, the polishing rate of the polished surface of the polished member having a substrate and a metal portion, where resins, silicon compounds, and metal materials are present, can be improved. Such a polishing liquid can effectively smooth the polished surface where resins, silicon compounds, and metal materials are present.

[0018] Fig. 1 is a cross-sectional view showing a schematic example of a polished member, showing a cross section parallel to the surface to be polished. The polished member 10 shown in Fig. 1 comprises a substrate 12 and a metal portion 14 disposed in an opening formed in the substrate 12. The substrate 12 contains a resin 12a and particles 12b containing a silicon compound. However, the size and number of each component (particles 12b, metal portion 14, etc.), the dimensional ratio between components, etc. are not limited to those shown in the figure.

[0019] Examples of silicon compounds include silicon oxides (e.g., SiO2), SiOC, and silicon nitrides (e.g., SiN). The particles containing a silicon compound may contain silicon oxide. In a cross section of a polished member containing a resin and particles containing a silicon compound, the minor axis of the particles or the proportion of the area occupied by the particles (based on the entire cross section) may be within the following ranges. The minor axis of the particles may be 0.01 μm or more, 0.2 μm or more, 0.6 μm or more, or 1.0 μm or more. The minor axis of the particles may be 100 μm or less, 50 μm or less, 25 μm or less, or 15 μm or less. From these perspectives, the minor axis of the particles may be 0.01 to 100 μm. The proportion of the area may be 1% or more, 15% or more, 30% or more, 45% or more, or 60% or more. The area ratio may be 99% or less, 90% or less, 80% or less, or 70% or less. From these viewpoints, the area ratio may be 1 to 99%. The cross-sectional shape of the metal portion perpendicular to the thickness direction of the base portion may be circular, and the diameter of the metal portion may be 1 to 200 μm. The interval between adjacent metal portions may be 1 to 200 μm.

[0020] The polishing liquid according to this embodiment contains abrasive grains containing cerium oxide. The use of abrasive grains containing cerium oxide can improve the polishing rate of a polished member containing a resin, and can also improve the polishing rate of a polished member containing a resin and a metal material, as well as a polished member containing a resin and a silicon compound. The abrasive grains may contain one or more types of particles. Examples of materials constituting the abrasive grains other than cerium oxide include inorganic materials such as silica (SiO), alumina, zirconia, titania, germania, and silicon carbide. The polishing liquid according to this embodiment does not need to contain alumina as a constituent material of the abrasive grains. The alumina content may be 0.1% by mass or less, less than 0.1% by mass, 0.01% by mass or less, 0.001% by mass or less, or substantially 0% by mass, based on the total mass of the polishing liquid.

[0021] From the viewpoint of easily improving the polishing rate of a resin-containing polished member and the polishing rate of a metal material, the cerium oxide content of the abrasive grains may be 90% by mass or more, 93% by mass or more, 95% by mass or more, more than 95% by mass, 98% by mass or more, 99% by mass or more, 99.5% by mass or more, or 99.9% by mass or more based on the entire abrasive grains (all abrasive grains contained in the polishing liquid or all of the particles constituting the abrasive grains). The abrasive grains may be substantially composed of cerium oxide (substantially 100% by mass of the abrasive grains is cerium oxide).

[0022] The average particle size D50 or D80 of the abrasive grains may be in the following ranges. The average particle sizes D50 and D80 of the abrasive grains refer to the 50% and 80% particle sizes of the cumulative volume distribution, and can be measured, for example, using a laser diffraction particle size distribution analyzer. The average particle size of the abrasive grains can be adjusted by natural settling, pulverization, dispersion, filtration, etc. For example, the particle size may be adjusted after mixing the components of the polishing liquid.

[0023] The average particle size D50 of the abrasive grains may be 10 nm or more, 50 nm or more, 70 nm or more, 100 nm or more, 150 nm or more, more than 150 nm, 200 nm or more, 250 nm or more, 300 nm or more, 320 nm or more, or 340 nm or more, from the viewpoint of easily improving the polishing rate of a resin-containing polished member and the polishing rate of a metal material. The average particle size D50 of the abrasive grains may be 1000 nm or less, 800 nm or less, 600 nm or less, 500 nm or less, 450 nm or less, 400 nm or less, or 350 nm or less, from the viewpoint of easily suppressing polishing scratches. From these viewpoints, the average particle size D50 of the abrasive grains may be 10 to 1000 nm, 50 to 800 nm, 100 to 500 nm, or 200 to 400 nm.

[0024] The average particle size D80 of the abrasive grains may be 50 nm or more, 100 nm or more, 200 nm or more, 300 nm or more, 350 nm or more, 400 nm or more, 450 nm or more, 500 nm or more, 550 nm or more, or 600 nm or more, from the viewpoint of easily improving the polishing rate of a resin-containing polished member and the polishing rate of a metal material. The average particle size D80 of the abrasive grains may be 1200 nm or less, 1100 nm or less, 1000 nm or less, 900 nm or less, 800 nm or less, 750 nm or less, 700 nm or less, or 650 nm or less, from the viewpoint of easily suppressing polishing scratches. From these viewpoints, the average particle size D80 of the abrasive grains may be 50 to 1200 nm, 100 to 1000 nm, 300 to 800 nm, or 500 to 700 nm.

[0025] The content of the abrasive grains may be within the following ranges based on the total mass of the polishing liquid. From the viewpoint of easily improving the polishing rate of a resin-containing polished member and the polishing rate of a metal material, the content of the abrasive grains may be 0.01% by mass or more, 0.05% by mass or more, 0.1% by mass or more, 0.3% by mass or more, 0.5% by mass or more, more than 0.5% by mass, 0.7% by mass or more, 0.8% by mass or more, 0.9% by mass or more, 1% by mass or more, 1.5% by mass or more, or 2% by mass or more. From the viewpoint of easily avoiding an increase in the viscosity of the polishing liquid, aggregation of the abrasive grains, etc., the content of the abrasive grains may be 10% by mass or less, 8% by mass or less, 5% by mass or less, 4% by mass or less, 3% by mass or less, 2% by mass or less, 1.5% by mass or less, or 1% by mass or less. From these viewpoints, the content of the abrasive grains may be 0.01 to 10 mass %, 0.1 to 5 mass %, 0.5 to 2 mass %, or 0.5 to 1.5 mass %.

[0026] The polishing liquid according to this embodiment contains an ether compound having a hydroxy group (ether compound A). The ether compound having a hydroxy group is a compound having at least one hydroxy group and at least one ether group. The "ether group" in ether compound A does not include the "-O-" structure in a hydroxy group (hydroxyl group), a carboxy group, a carboxylate salt group, an ester group, a sulfo group, or a phosphate group. The hydroxy group does not include the OH group contained in a carboxy group, a sulfo group, or a phosphate group.

[0027] From the viewpoint of easily improving the polishing rate of a resin-containing member to be polished and the polishing rate of a metal material, the ether compound A may contain a compound having a number of hydroxy groups in the following ranges. The number of hydroxy groups is 1 or more, and may be 2 or more, 3 or more, 4 or more, 5 or more, 6 or more, 8 or more, 9 or more, 10 or more, 11 or more, or 12 or more. The number of hydroxy groups may be 20 or less, 15 or less, 12 or less, 11 or less, 10 or less, 9 or less, 8 or less, 6 or less, 5 or less, 4 or less, 3 or less, or 2 or less. From these viewpoints, the number of hydroxy groups may be 1 to 20, 1 to 10, 1 to 5, 1 to 3, or 1 to 2. From the viewpoint of easily improving the polishing rate of a resin-containing member to be polished and the polishing rate of a metal material, the ether compound A may contain a compound having one hydroxy group, a compound having two or more hydroxy groups, or a compound having one hydroxy group and a compound having two or more hydroxy groups.

[0028] From the viewpoint of easily improving the polishing rate of a resin-containing member to be polished and the polishing rate of a metal material, the ether compound A may include a compound having the number of ether groups in the following ranges. The number of ether groups is 1 or more, and may be 2 or more, 3 or more, 4 or more, 5 or more, 6 or more, 8 or more, or 9 or more. The number of ether groups may be 20 or less, 15 or less, 12 or less, 11 or less, 10 or less, 9 or less, 8 or less, 6 or less, 5 or less, 4 or less, 3 or less, or 2 or less. From these viewpoints, the number of ether groups may be 1 to 20, 1 to 10, 1 to 5, 1 to 3, or 1 to 2. From the viewpoint of easily improving the polishing rate of a resin-containing member to be polished and the polishing rate of a metal material, the ether compound A may include a compound having one ether group, a compound having two or more ether groups, or a compound having one ether group and a compound having two or more ether groups.

[0029] The ether compound A may contain an alkoxy alcohol, which facilitates the improvement of the polishing rate for resin-containing substrates and the polishing rate for metal materials. Examples of the alkoxy alcohol include 2-methoxyethanol, 2-ethoxyethanol, 2-(2-methoxy)ethoxyethanol, 2-(2-butoxyethoxy)ethanol, 2-propoxyethanol, 2-butoxyethanol, 3-methoxy-3-methyl-1-butanol, 2-(methoxymethoxy)ethanol, 2-isopropoxyethanol, 2-butoxyethanol, 2-isopentyloxyethanol, 1-propoxy-2-propanol, 3-methoxy-3-methyl-1-butanol, 3-methoxy-1-butanol, 3-methoxy-3-methylbutanol, 1-methoxy-2-butanol, and glycol monoethers. The alkoxy alcohol may contain a compound having an alkoxy group having 1 to 5, 1 to 4, 1 to 3, 1 to 2, or 2 to 3 carbon atoms, which facilitates the improvement of the polishing rate for resin-containing substrates and the polishing rate for metal materials. The alkoxy alcohol may include 1-propoxy-2-propanol or 3-methoxy-3-methyl-1-butanol, from the viewpoint of easily improving the polishing rate for a resin-containing member to be polished and the polishing rate for metal materials.

[0030] The ether compound A may contain a polyether, or an alkoxy alcohol and a polyether, in order to facilitate improvement in the polishing rate of resin-containing polished materials and metal materials. Examples of polyethers include polyglycerin, polysaccharides, polyalkylene glycols, polyoxypropylene polyglyceryl ethers, polyoxyethylene polyglyceryl ethers, 1,4-di(2-hydroxyethoxy)benzene, 2,2-bis(4-polyoxyethyleneoxyphenyl)propane, 2,2-bis(4-polyoxypropyleneoxyphenyl)propane, ethylene glycol monophenyl ether, diethylene glycol monophenyl ether, polyoxyalkylene monophenyl ethers, propylene glycol monophenyl ether, polyoxypropylene monomethylphenyl ether, polyethylene glycol monomethyl ether, pentaerythritol polyoxyethylene ether, ethylene glycol monoallyl ether, polyoxyethylene monoallyl ether, and alkyl glucosides. The polyether may be a compound other than an alkoxy alcohol. The polyether may contain polyglycerin, from the viewpoint that the polishing rate for a resin-containing member to be polished and the polishing rate for a metal material are likely to be improved.

[0031] From the viewpoint of easily improving the polishing rate for a resin-containing member to be polished and the polishing rate for metal materials, the ether compound A may contain polyglycerin having an average degree of polymerization of glycerin in the following ranges: The average degree of polymerization may be 3 or more, 4 or more, 5 or more, 8 or more, or 10 or more. The average degree of polymerization may be 100 or less, 50 or less, 30 or less, 20 or less, 15 or less, 12 or less, or 10 or less. From these viewpoints, the average degree of polymerization may be 3 to 100, 5 to 50, 8 to 20, 5 to 15, or 8 to 15.

[0032] From the viewpoint of easily improving the polishing rate for a resin-containing polished member and the polishing rate for metal materials, the ether compound A may contain polyglycerol having a hydroxyl value within the following ranges. The hydroxyl value may be 100 or more, 200 or more, 300 or more, 400 or more, 500 or more, 600 or more, 700 or more, 800 or more, 850 or more, or 870 or more. The hydroxyl value may be 2000 or less, 1500 or less, 1200 or less, 1100 or less, 1000 or less, 950 or less, 930 or less, or 910 or less. From these viewpoints, the hydroxyl value may be 100 to 2000, 300 to 1500, 500 to 1200, or 800 to 1000.

[0033] From the viewpoint of easily improving the polishing rate of a resin-containing member to be polished and the polishing rate of a metal material, the ether compound A may include a compound having one hydroxy group and one ether group. From the viewpoint of easily improving the polishing rate of a resin-containing member to be polished and the polishing rate of a metal material, the ether compound A may include a compound having an ether group bonding an alkyl group having a hydroxy group as a substituent and an unsubstituted alkyl group, and the compound may be a compound having one hydroxy group and one ether group.

[0034] From the viewpoint of easily improving the removal rate of a resin-containing polished member and the removal rate of a metal material, the ether compound A may contain a compound having the following molecular weight: The molecular weight may be 50 or more, 80 or more, 100 or more, 110 or more, 115 or more, 118 or more, 120 or more, 150 or more, 190 or more, 200 or more, more than 200, 300 or more, 500 or more, 700 or more, or 750 or more. The molecular weight may be 3000 or less, 2000 or less, 1500 or less, 1200 or less, 1000 or less, 800 or less, 750 or less, 700 or less, 500 or less, 300 or less, 200 or less, less than 200, 190 or less, 150 or less, or 120 or less. From these viewpoints, the molecular weight may be 50 to 3000, 80 to 1000, 100 to 500, 100 to 200, or 100 or more and less than 200. The ether compound A may contain an alkoxy alcohol having a molecular weight of less than 200, for example.

[0035] When the ether compound A is a polymer, the weight-average molecular weight (Mw) may be used as the molecular weight. The weight-average molecular weight can be measured, for example, by gel permeation chromatography (GPC) under the following conditions. [conditions] Sample: 20 μL Standard polyethylene glycol: Polymer Laboratories, standard polyethylene glycol (molecular weight: 106, 194, 440, 600, 1470, 4100, 7100, 10300, 12600, and 23000) Detector: RI-monitor manufactured by Showa Denko K.K., product name "Syodex-RI SE-61" Pump: Hitachi, Ltd., product name "L-6000" Column: Showa Denko K.K. product names "GS-220HQ" and "GS-620HQ" connected in this order Eluent: 0.4 mol / L sodium chloride aqueous solution Measurement temperature: 30℃ Flow rate: 1.00mL / min Measurement time: 45 min

[0036] From the viewpoint of easily improving the polishing rate of a resin-containing polished member and the polishing rate of a metal material, the content of the alkoxy alcohol may be in the following ranges based on the total mass of the ether compounds (total mass of the ether compounds contained in the polishing liquid) or the total mass of the ether compounds A (total mass of the ether compounds A contained in the polishing liquid): The content of the alkoxy alcohol may be more than 0% by mass, 5% by mass or more, 8% by mass or more, 10% by mass or more, 12% by mass or more, 15% by mass or more, 18% by mass or more, 20% by mass or more, 23% by mass or more, 24% by mass or more, 25% by mass or more, 30% by mass or more, 35% by mass or more, 40% by mass or more, 45% by mass or more, 50% by mass or more, more than 50% by mass, 55% by mass or more, 60% by mass or more, 65% by mass or more, 70% by mass or more, 75% by mass or more, 80% by mass or more, 85% by mass or more, 90% by mass or more, or 95% by mass or more. The content of the alkoxy alcohol may be 100% by mass or less, less than 100% by mass, 95% by mass or less, 90% by mass or less, 85% by mass or less, 80% by mass or less, 75% by mass or less, 70% by mass or less, 65% by mass or less, 60% by mass or less, 55% by mass or less, 50% by mass or less, less than 50% by mass, 45% by mass or less, 40% by mass or less, 35% by mass or less, 30% by mass or less, 25% by mass or less, or 24% by mass or less. From these viewpoints, the content of the alkoxy alcohol may be more than 0% by mass and 100% by mass or less, 5 to 100% by mass, 5 to 95% by mass, 5 to 50% by mass, 5 to 40% by mass, 20 to 100% by mass, 20 to 95% by mass, 20 to 50% by mass, or 20 to 40% by mass.

[0037] From the viewpoint of easily improving the polishing rate of a resin-containing polished member and the polishing rate of a metal material, the content A of the polyether or polyglycerin may be in the following ranges based on the total mass of the ether compounds (total mass of the ether compounds contained in the polishing liquid) or the total mass of the ether compounds A (total mass of the ether compounds A contained in the polishing liquid): The content A may be more than 0% by mass, 5% by mass or more, 10% by mass or more, 15% by mass or more, 20% by mass or more, 25% by mass or more, 30% by mass or more, 35% by mass or more, 40% by mass or more, 45% by mass or more, 50% by mass or more, more than 50% by mass, 55% by mass or more, 60% by mass or more, 65% by mass or more, 70% by mass or more, 75% by mass or more, or 76% by mass or more. The content A may be 100% by mass or less, less than 100% by mass, 95% by mass or less, 92% by mass or less, 90% by mass or less, 88% by mass or less, 85% by mass or less, 82% by mass or less, 80% by mass or less, 77% by mass or less, 76% by mass or less, 75% by mass or less, 70% by mass or less, or 65% by mass or less. From these viewpoints, the content A may be more than 0% by mass and 100% by mass or less, more than 0% by mass and 95% by mass or less, 5 to 95% by mass, 50 to 95% by mass, 60 to 95% by mass, more than 0% by mass and 80% by mass or less, 5 to 80% by mass, 50 to 80% by mass, or 60 to 80% by mass.

[0038] From the viewpoint of easily improving the polishing rate for a resin-containing polished member and the polishing rate for metal materials, the content of ether compound A may be in the following ranges based on the total mass of the polishing liquid: The content of ether compound A may be more than 0% by mass, 0.01% by mass or more, 0.03% by mass or more, 0.05% by mass or more, 0.08% by mass or more, 0.1% by mass or more, 0.3% by mass or more, 0.5% by mass or more, 0.8% by mass or more, 1% by mass or more, 1.1% by mass or more, 1.2% by mass or more, 1.3% by mass or more, 1.4% by mass or more, 1.5% by mass or more, or 1.6% by mass or more. The content of ether compound A may be 10% by mass or less, 8% by mass or less, 5% by mass or less, 3% by mass or less, 2% by mass or less, 1.8% by mass or less, 1.7% by mass or less, 1.6% by mass or less, 1.5% by mass or less, 1.4% by mass or less, 1.3% by mass or less, 1.2% by mass or less, 1.1% by mass or less, 1% by mass or less, less than 1%, 0.8% by mass or less, 0.5% by mass or less, 0.3% by mass or less, or 0.1% by mass or less. From these viewpoints, the content of ether compound A may be more than 0% by mass and 10% by mass or less, 0.1 to 10% by mass, 0.5 to 10% by mass, 1 to 10% by mass, more than 0% by mass and 5% by mass or less, 0.1 to 5% by mass, 0.5 to 5% by mass, 1 to 5% by mass, more than 0% by mass and 3% by mass or less, 0.1 to 3% by mass, 0.5 to 3% by mass, or 1 to 3% by mass.

[0039] From the viewpoint of easily improving the polishing rate for a resin-containing polished member and the polishing rate for metal materials, the content of the alkoxy alcohol may be in the following ranges based on the total mass of the polishing liquid: The content of the alkoxy alcohol may be more than 0% by mass, 0.01% by mass or more, 0.03% by mass or more, 0.05% by mass or more, 0.08% by mass or more, 0.1% by mass or more, 0.15% by mass or more, 0.2% by mass or more, 0.25% by mass or more, 0.3% by mass or more, 0.31% by mass or more, 0.33% by mass or more, 0.35% by mass or more, 0.4% by mass or more, 0.45% by mass or more, 0.5% by mass or more, 0.55% by mass or more, 0.6% by mass or more, or 0.65% by mass or more. The content of alkoxy alcohol is 5% by mass or less, 3% by mass or less, 1% by mass or less, 0.8% by mass or less, 0.7% by mass or less, 0.65% by mass or less, 0.6% by mass or less, 0.55% by mass or less, 0.5% by mass or less, 0.45% by mass % or less, 0.4 mass% or less, 0.35 mass% or less, 0.33 mass% or less, 0.31 mass% or less, 0.3 mass% or less, 0.25 mass% or less, 0.2 mass% or less, 0.15 mass% or less, or 0.1 mass% or less. From these viewpoints, the content of the alkoxy alcohol may be more than 0% by mass and not more than 5% by mass, 0.01 to 5% by mass, 0.1 to 5% by mass, 0.2 to 5% by mass, more than 0% by mass and not more than 1% by mass, 0.01 to 1% by mass, 0.1 to 1% by mass, 0.2 to 1% by mass, more than 0% by mass and not more than 0.8% by mass, 0.01 to 0.8% by mass, 0.1 to 0.8% by mass, 0.2 to 0.8% by mass, more than 0% by mass and not more than 0.5% by mass, 0.01 to 0.5% by mass, 0.1 to 0.5% by mass, or 0.2 to 0.5% by mass.

[0040] The content B of the polyether or polyglycerin may be in the following ranges based on the total mass of the polishing liquid, from the viewpoint of easily improving the polishing rate for a resin-containing polished member and the polishing rate for metal materials. The content B may be greater than 0 mass%, 0.01 mass% or greater, 0.05 mass% or greater, 0.1 mass% or greater, 0.3 mass% or greater, 0.5 mass% or greater, 0.6 mass% or greater, 0.8 mass% or greater, 0.9 mass% or greater, or 1 mass% or greater. The content B may be 10 mass% or less, 8 mass% or less, 7 mass% or less, 6 mass% or less, 5 mass% or less, 4 mass% or less, 3 mass% or less, 2 mass% or less, 1.5 mass% or less, or 1 mass% or less. From these viewpoints, the content B may be greater than 0 mass% but 10 mass% or less, 0.01 to 10 mass%, 0.1 to 5 mass%, 0.5 to 3 mass%, or 0.5 to 2 mass%.

[0041] The content of ether compound A may be in the following ranges per 100 parts by mass of abrasive grains, from the viewpoint of easily improving the polishing rate for resin-containing polished members and the polishing rate for metal materials: The content of ether compound A may be more than 0 parts by mass, 1 part by mass or more, 3 parts by mass or more, 5 parts by mass or more, 8 parts by mass or more, 10 parts by mass or more, 30 parts by mass or more, 50 parts by mass or more, 80 parts by mass or more, 100 parts by mass or more, more than 100 parts by mass, 110 parts by mass or more, 120 parts by mass or more, 130 parts by mass or more, 140 parts by mass or more, 150 parts by mass or more, or 160 parts by mass or more. The content of ether compound A is 1000 parts by mass or less, 800 parts by mass or less, 500 parts by mass or less, 300 parts by mass or less, 200 parts by mass or less, 180 parts by mass or less, 170 parts by mass or less, 160 parts by mass or less, 150 parts by mass or less, 140 parts by mass. The following may be 130 parts by mass or less, 120 parts by mass or less, 110 parts by mass or less, 100 parts by mass or less, less than 100 parts by mass, 80 parts by mass or less, 50 parts by mass or less, 30 parts by mass or less, 10 parts by mass or less, 8 parts by mass or less, or 5 parts by mass or less. From these viewpoints, the content of ether compound A may be more than 0 parts by mass and not more than 1000 parts by mass, 10 to 1000 parts by mass, 50 to 1000 parts by mass, 100 to 1000 parts by mass, more than 0 parts by mass and not more than 500 parts by mass, 10 to 500 parts by mass, 50 to 500 parts by mass, 100 to 500 parts by mass, more than 0 parts by mass and not more than 300 parts by mass, 10 to 300 parts by mass, 50 to 300 parts by mass, or 100 to 300 parts by mass.

[0042] The content of the alkoxy alcohol may be in the following ranges per 100 parts by mass of the abrasive grains, from the viewpoint of easily improving the polishing rate for a resin-containing polished member and the polishing rate for metal materials: The content of the alkoxy alcohol may be more than 0 parts by mass, 1 part by mass or more, 3 parts by mass or more, 5 parts by mass or more, 8 parts by mass or more, 10 parts by mass or more, 15 parts by mass or more, 20 parts by mass or more, 25 parts by mass or more, 30 parts by mass or more, 35 parts by mass or more, 40 parts by mass or more, 45 parts by mass or more, 50 parts by mass or more, 55 parts by mass or more, 60 parts by mass or more, or 65 parts by mass or more. The content of alkoxy alcohol is 500 parts by mass or less, 300 parts by mass or less, 100 parts by mass or less, 80 parts by mass or less, 70 parts by mass or less, 65 parts by mass or less, 60 parts by mass or less, 55 parts by mass or less, 50 parts by mass or less. The amount may be 45 parts by mass or less, 40 parts by mass or less, 35 parts by mass or less, 30 parts by mass or less, 25 parts by mass or less, 20 parts by mass or less, 15 parts by mass or less, 10 parts by mass or less, 8 parts by mass or less, or 5 parts by mass or less. From these viewpoints, the content of the alkoxy alcohol may be more than 0 parts by mass and not more than 500 parts by mass, 1 to 500 parts by mass, 10 to 500 parts by mass, 20 to 500 parts by mass, more than 0 parts by mass and not more than 100 parts by mass, 1 to 100 parts by mass, 10 to 100 parts by mass, 20 to 100 parts by mass, more than 0 parts by mass and not more than 80 parts by mass, 1 to 80 parts by mass, 10 to 80 parts by mass, 20 to 80 parts by mass, more than 0 parts by mass and not more than 50 parts by mass, 1 to 50 parts by mass, 10 to 50 parts by mass, or 20 to 50 parts by mass.

[0043] The polyether content or polyglycerin content, C, may be within the following ranges per 100 parts by mass of abrasive grains, from the viewpoint of easily improving the polishing rate of a resin-containing polished member and the polishing rate of metal materials. The content C may be more than 0 parts by mass, 1 part by mass or more, 5 parts by mass or more, 10 parts by mass or more, 30 parts by mass or more, 50 parts by mass or more, 60 parts by mass or more, 80 parts by mass or more, 90 parts by mass or more, or 100 parts by mass or more. The content C may be 1000 parts by mass or less, 800 parts by mass or less, 700 parts by mass or less, 600 parts by mass or less, 500 parts by mass or less, 400 parts by mass or less, 300 parts by mass or less, 200 parts by mass or less, 150 parts by mass or less, or 100 parts by mass or less. From these viewpoints, the content C may be more than 0 parts by mass and not more than 1000 parts by mass, 1 to 1000 parts by mass, 10 to 500 parts by mass, 50 to 300 parts by mass, or 50 to 200 parts by mass.

[0044] From the viewpoint of easily improving the polishing rate for resin-containing polished members and the polishing rate for metal materials, the content of alkoxy alcohol may be within the following ranges per 100 parts by mass of polyether or 100 parts by mass of polyglycerin: The content of alkoxy alcohol may be more than 0 parts by mass, 1 part by mass or more, 3 parts by mass or more, 5 parts by mass or more, 8 parts by mass or more, 10 parts by mass or more, 15 parts by mass or more, 20 parts by mass or more, 25 parts by mass or more, 30 parts by mass or more, 32 parts by mass or more, 33 parts by mass or more, 34 parts by mass or more, 35 parts by mass or more, 40 parts by mass or more, 45 parts by mass or more, 50 parts by mass or more, 55 parts by mass or more, 60 parts by mass or more, or 65 parts by mass or more. The content of alkoxy alcohol is 1000 parts by mass or less, 800 parts by mass or less, 700 parts by mass or less, 600 parts by mass or less, 500 parts by mass or less, 400 parts by mass or less, 300 parts by mass or less, 200 parts by mass or less, 150 parts by mass or less, 120 parts by mass or less, 100 parts by mass or less It may be up to 80 parts by weight, up to 70 parts by weight, up to 65 parts by weight, up to 60 parts by weight, up to 55 parts by weight, up to 50 parts by weight, up to 45 parts by weight, up to 40 parts by weight, up to 35 parts by weight, up to 34 parts by weight, up to 33 parts by weight, or up to 32 parts by weight. From these viewpoints, the content of the alkoxy alcohol may be more than 0 parts by mass and not more than 1000 parts by mass, 1 to 1000 parts by mass, 10 to 1000 parts by mass, more than 0 parts by mass and not more than 100 parts by mass, 1 to 100 parts by mass, 10 to 100 parts by mass, more than 0 parts by mass and not more than 50 parts by mass, 1 to 50 parts by mass, or 10 to 50 parts by mass.

[0045] The polishing liquid according to this embodiment may not contain xanthan gum as the ether compound A. The content of xanthan gum may be 0.5% by mass or less, less than 0.5% by mass, 0.1% by mass or less, 0.01% by mass or less, or substantially 0% by mass, based on the total mass of the polishing liquid.

[0046] (water) The polishing liquid according to this embodiment may contain water. Water may be contained as the remainder of the polishing liquid after removing other components. The water content may be within the following ranges based on the total mass of the polishing liquid. The water content may be 90% by mass or more, 91% by mass or more, 92% by mass or more, 93% by mass or more, 94% by mass or more, 94.5% by mass or more, 95% by mass or more, 95.5% by mass or more, 96% by mass or more, or 97% by mass or more. The water content may be less than 100% by mass, 99% by mass or less, 98% by mass or less, 97% by mass or less, 96% by mass or less, or 95.5% by mass or less. From these perspectives, the water content may be 90% by mass or more but less than 100% by mass, 90 to 99% by mass, or 95 to 99% by mass.

[0047] (additives) The polishing liquid according to this embodiment may contain components other than abrasive grains, ether compound A, and water. Examples of such components include ether compounds without hydroxy groups, acid components, ammonia, anticorrosive agents, basic hydroxides, peroxides, organic solvents, surfactants, and antifoaming agents. The polishing liquid according to this embodiment may not contain at least one of these components.

[0048] The polishing liquid according to this embodiment may contain an acid component. It is presumed that the polishing rate of the metal material is likely to be improved by the acid component forming a complex with the metal material or dissolving the metal material. The polishing liquid according to this embodiment may contain an organic acid component or an inorganic acid component as the acid component.

[0049] Examples of the organic acid component include organic acids (excluding amino acids), organic acid esters, organic acid salts, amino acids, amino acid esters, and amino acid salts. Examples of organic acids include formic acid, acetic acid, propionic acid, butyric acid, valeric acid, 2-methylbutyric acid, n-hexanoic acid, 3,3-dimethylbutyric acid, 2-ethylbutyric acid, 4-methylpentanoic acid, n-heptanoic acid, 2-methylhexanoic acid, n-octanoic acid, 2-ethylhexanoic acid, benzoic acid, glycolic acid, salicylic acid, glyceric acid, oxalic acid, malonic acid, succinic acid, 3-methylphthalic acid, 4-methylphthalic acid, 3-aminophthalic acid, 4-aminophthalic acid, 3-nitrophthalic acid, 4-nitrophthalic acid, glutaric acid, adipic acid, pimelic acid, maleic acid, phthalic acid, isophthalic acid, malic acid, tartaric acid, citric acid, p-toluenesulfonic acid, p-phenolsulfonic acid, methylsulfonic acid, lactic acid, itaconic acid, maleic acid, quinaldic acid, adipic acid, and pimelic acid. Examples of organic acid esters include esters of the above-mentioned organic acids. Examples of organic acid salts include ammonium salts (e.g., ammonium acetate), alkali metal salts, alkaline earth metal salts, and halides of the above-mentioned organic acids. Examples of amino acids include alanine, arginine, asparagine, aspartic acid, cysteine, glutamine, glutamic acid, glycine, histidine, isoleucine, leucine, lysine, methionine, phenylalanine, proline, serine, threonine, tryptophan, tyrosine, and valine. Examples of amino acid esters include esters of the above-mentioned amino acids. Examples of amino acid salts include alkali metal salts of the above-mentioned organic acids.

[0050] Examples of inorganic acid components include inorganic acids, ammonium salts of inorganic acids, and metal salts of inorganic acids (such as alkali metal salts and alkaline earth metal salts). Examples of inorganic acids include hydrochloric acid, sulfuric acid, nitric acid, and chromic acid. Examples of ammonium salts of inorganic acids include ammonium salts of monovalent inorganic acids such as ammonium nitrate, ammonium chloride, and ammonium bromide; ammonium salts of divalent inorganic acids such as ammonium carbonate, ammonium hydrogencarbonate, ammonium sulfate, ammonium persulfate, and cerium diammonium nitrate; and ammonium salts of trivalent inorganic acids such as ammonium phosphate, ammonium hydrogenphosphate, ammonium dihydrogenphosphate, and ammonium borate.

[0051] The organic acid component may include at least one selected from the group consisting of an organic acid other than an amino acid and an amino acid, or may include at least one selected from the group consisting of malic acid and glycine, from the viewpoint of easily improving the removal rate of metal materials. The inorganic acid component may include at least one selected from the group consisting of ammonium chloride, ammonium carbonate, ammonium bicarbonate, ammonium sulfate, ammonium persulfate, and ammonium dihydrogen phosphate, or may include at least one selected from the group consisting of ammonium carbonate, ammonium bicarbonate, ammonium persulfate, and ammonium dihydrogen phosphate, or may include at least one selected from the group consisting of ammonium carbonate, ammonium persulfate, and ammonium dihydrogen phosphate, or may include at least one selected from the group consisting of ammonium carbonate and ammonium persulfate, from the viewpoint of easily improving the removal rate of metal materials.

[0052] From the viewpoint of easily improving the polishing rate for metal materials, the content of the acid component may be in the following ranges based on the total mass of the polishing liquid: The content of the acid component may be more than 0 mass%, 0.01 mass% or more, 0.02 mass% or more, 0.05 mass% or more, 0.1 mass% or more, 0.2 mass% or more, 0.3 mass% or more, 0.4 mass% or more, 0.5 mass% or more, 0.6 mass% or more, 0.7 mass% or more, 0.8 mass% or more, 0.85 mass% or more, 0.9 mass% or more, 1 mass% or more, 1.1 mass% or more, 1.2 mass% or more, 1.3 mass% or more, 1.4 mass% or more, 1.5 mass% or more, or 1.6 mass% or more. The content of the acid component is 5% by mass or less, 4.5% by mass or less, 4% by mass or less, 3.5% by mass or less, 3% by mass or less, 2.5% by mass or less, 2% by mass or less, 1.9% by mass or less, 1.8% by mass or less, 1.7% by mass or less, 1.6% by mass or less, 1.5% by mass or less, 1.4% by mass or less, 1.3% by mass or less, 1.2% by mass or less, It may be 1.1 mass% or less, 1 mass% or less, 0.9 mass% or less, 0.85 mass% or less, 0.8 mass% or less, 0.7 mass% or less, 0.6 mass% or less, 0.5 mass% or less, 0.4 mass% or less, 0.3 mass% or less, 0.2 mass% or less, 0.1 mass% or less, 0.05 mass% or less, or 0.02 mass% or less. From these viewpoints, the content of the acid component may be more than 0% by mass and not more than 5% by mass, 0.01 to 5% by mass, 0.05 to 5% by mass, more than 0% by mass and not more than 2% by mass, 0.01 to 2% by mass, 0.05 to 2% by mass, more than 0% by mass and not more than 1% by mass, 0.01 to 1% by mass, 0.05 to 1% by mass, more than 0% by mass and not more than 0.5% by mass, 0.01 to 0.5% by mass, or 0.05 to 0.5% by mass.

[0053] From the viewpoint of easily improving the removal rate of metal materials, the content of the organic acid component may be in the following ranges based on the total mass of the polishing liquid: The content of the organic acid component may be more than 0 mass%, 0.01 mass% or more, 0.02 mass% or more, 0.05 mass% or more, 0.1 mass% or more, 0.15 mass% or more, 0.2 mass% or more, 0.25 mass% or more, 0.3 mass% or more, 0.35 mass% or more, 0.4 mass% or more, 0.41 mass% or more, 0.45 mass% or more, 0.5 mass% or more, 0.6 mass% or more, or 0.8 mass% or more. The content of organic acid components is 5% by mass or less, 4% by mass or less, 3% by mass or less, 2% by mass or less, 1% by mass or less, 0.8% by mass or less, 0.6% by mass or less, 0.5% by mass or less, 0.45% by mass or less, 0.41% by mass or less, 0 It may be .4% by mass or less, 0.35% by mass or less, 0.3% by mass or less, 0.25% by mass or less, 0.2% by mass or less, 0.15% by mass or less, 0.1% by mass or less, 0.05% by mass or less, or 0.02% by mass or less. From these viewpoints, the content of the organic acid component may be more than 0% by mass and not more than 5% by mass, 0.01 to 5% by mass, 0.02 to 5% by mass, 0.1 to 5% by mass, more than 0% by mass and not more than 1% by mass, 0.01 to 1% by mass, 0.02 to 1% by mass, 0.1 to 1% by mass, more than 0% by mass and not more than 0.5% by mass, 0.01 to 0.5% by mass, 0.02 to 0.5% by mass, or 0.1 to 0.5% by mass.

[0054] From the viewpoint of easily improving the removal rate of metal materials, the content of the inorganic acid component may be in the following range based on the total mass of the polishing liquid: The content of the inorganic acid component may be more than 0 mass%, 0.01 mass% or more, 0.05 mass% or more, 0.1 mass% or more, 0.2 mass% or more, 0.3 mass% or more, 0.4 mass% or more, 0.5 mass% or more, 0.6 mass% or more, 0.7 mass% or more, 0.8 mass% or more, 0.9 mass% or more, 1 mass% or more, 1.1 mass% or more, or 1.2 mass% or more. The content of the inorganic acid component is 5% by mass or less, 4.5% by mass or less, 4% by mass or less, 3.5% by mass or less, 3% by mass or less, 2.5% by mass or less, 2% by mass or less, 1.8% by mass or less, 1.6% by mass or less, 1. It may be 5% by mass or less, 1.4% by mass or less, 1.3% by mass or less, 1.2% by mass or less, 1.1% by mass or less, 1% by mass or less, 0.9% by mass or less, 0.8% by mass or less, or 0.7% by mass or less. From these viewpoints, the content of the inorganic acid component is more than 0% by mass and not more than 5% by mass, 0.01-5% by mass, 0.1-5% by mass, 0.5-5% by mass, more than 0% by mass and not more than 1% by mass, 0 It may be .01 to 1% by mass, 0.1 to 1% by mass, 0.5 to 1% by mass, more than 0% by mass and 0.9% by mass or less, 0.01 to 0.9% by mass, or 0.1 to 0.9% by mass.

[0055] The polishing liquid according to this embodiment may contain an ammonium salt. It is presumed that the ammonium salt or the ammonium cation of the ammonium salt forms a complex with the metal material, which facilitates an improvement in the removal rate of the metal material. The ammonium salt may include an ammonium salt of an inorganic acid, or an ammonium salt of an organic acid, from the viewpoint of facilitating an improvement in the removal rate of the metal material.

[0056] The ammonium salt may include at least one selected from the group consisting of ammonium salts of monovalent inorganic acids, ammonium salts of divalent inorganic acids, and ammonium salts of trivalent inorganic acids, from the viewpoint of easily improving the polishing rate for metal materials. The ammonium salt may include at least one selected from the group consisting of ammonium chloride, ammonium carbonate, ammonium hydrogen carbonate, ammonium sulfate, ammonium persulfate, ammonium dihydrogen phosphate, and ammonium acetate, from the viewpoint of easily improving the polishing rate for metal materials. The ammonium salt may include an ammonium salt other than a peroxide, and may include a peroxide (ammonium persulfate, etc.), from the viewpoint of easily improving the polishing rate for metal materials.

[0057] The ammonium salt may contain a compound having the following molecular weight, from the viewpoint of easily improving the removal rate of metal materials. The molecular weight may be 50 or more, 60 or more, 70 or more, 75 or more, 78 or more, 80 or more, 90 or more, 100 or more, 110 or more, 120 or more, 130 or more, 140 or more, 150 or more, 180 or more, 200 or more, or 220 or more. The molecular weight may be 1000 or less, less than 1000, 800 or less, 500 or less, 300 or less, 250 or less, 230 or less, 220 or less, 200 or less, 180 or less, 150 or less, 140 or less, 130 or less, 120 or less, 110 or less, 100 or less, 90 or less, 80 or less, or 78 or less. From these viewpoints, the molecular weight may be 50-1000, 70-1000, 80-1000, 50-500, 70-500, 80-500, 50-250, 70-250, 80-250, 50-100, 70-100, or 80-100.

[0058] From the viewpoint of easily improving the polishing rate for metal materials, the content of the ammonium salt other than peroxide may be in the following ranges based on the total mass of the ammonium salt (total mass of ammonium salt contained in the polishing liquid): The content of the ammonium salt other than peroxide may be more than 0 mass%, 1 mass% or more, 5 mass% or more, 10 mass% or more, 20 mass% or more, 30 mass% or more, 34 mass% or more, 35 mass% or more, 40 mass% or more, 41 mass% or more, 45 mass% or more, 50 mass% or more, more than 50 mass%, 60 mass% or more, 70 mass% or more, 80 mass% or more, 90 mass% or more, 95 mass% or more, 99 mass% or more, or substantially 100 mass% (an embodiment in which the ammonium salt contained in the polishing liquid is substantially composed of an ammonium salt other than peroxide). The content of the ammonium salt other than peroxide may be 100% by mass or less, less than 100% by mass, 99% by mass or less, 95% by mass or less, 90% by mass or less, 80% by mass or less, 70% by mass or less, 60% by mass or less, 50% by mass or less, less than 50% by mass, 45% by mass or less, 41% by mass or less, 40% by mass or less, 35% by mass or less, 34% by mass or less, 30% by mass or less, 20% by mass or less, 10% by mass or less, or 5% by mass or less. From these viewpoints, the content of the ammonium salt other than peroxide may be more than 0% by mass and 100% by mass or less, 30 to 100% by mass, 50 to 100% by mass, or 80 to 100% by mass.

[0059] When the ammonium salt contains a peroxide, the content of the peroxide (ammonium salt) may be in the following ranges based on the total mass of the ammonium salt (total mass of the ammonium salt contained in the polishing liquid), from the viewpoint of easily improving the polishing rate of metal materials: The content of the peroxide (ammonium salt) may be more than 0 mass%, 1 mass% or more, 5 mass% or more, 10 mass% or more, 20 mass% or more, 30 mass% or more, 40 mass% or more, 50 mass% or more, more than 50 mass%, 55 mass% or more, 59 mass% or more, 60 mass% or more, 65 mass% or more, 66 mass% or more, 70 mass% or more, 80 mass% or more, 90 mass% or more, 95 mass% or more, 99 mass% or more, or substantially 100 mass% (an embodiment in which the ammonium salt contained in the polishing liquid is substantially composed of peroxide). The content of peroxide (ammonium salt) may be 100% by mass or less, less than 100% by mass, 99% by mass or less, 95% by mass or less, 90% by mass or less, 80% by mass or less, 70% by mass or less, or 66% by mass or less. From these viewpoints, the content of peroxide (ammonium salt) may be more than 0% by mass and 100% by mass or less, 50 to 100% by mass, 60 to 100% by mass, more than 0% by mass and less than 100% by mass, 50% by mass or more and less than 100% by mass, or 60% by mass or more and less than 100% by mass.

[0060] The content of the ammonium salt (the total amount of compounds corresponding to ammonium salts; the same applies hereinafter) may be in the following ranges based on the total mass of the polishing liquid, from the viewpoint of easily improving the polishing rate for metal materials: The content of the ammonium salt may be more than 0 mass%, 0.01 mass% or more, 0.02 mass% or more, 0.05 mass% or more, 0.1 mass% or more, 0.2 mass% or more, 0.3 mass% or more, 0.4 mass% or more, 0.45 mass% or more, 0.5 mass% or more, more than 0.5 mass%, 0.6 mass% or more, 0.7 mass% or more, 0.8 mass% or more, 0.85 mass% or more, 0.9 mass% or more, 1 mass% or more, 1.1 mass% or more, or 1.2 mass% or more. The content of ammonium salt is 10% by mass or less, 8% by mass or less, 5% by mass or less, 4% by mass or less, 3% by mass or less, 2% by mass or less, 1.8% by mass or less, 1.7% by mass or less, 1.6% by mass or less, 1.5% by mass or less, 1.4% by mass or less, 1.3% by mass or less, 1.2% by mass or less, 1.1% by mass or less, 1% by mass. The following may be 0.9 mass% or less, 0.85 mass% or less, 0.8 mass% or less, 0.7 mass% or less, 0.6 mass% or less, 0.5 mass% or less, 0.45 mass% or less, 0.4 mass% or less, 0.3 mass% or less, 0.2 mass% or less, 0.1 mass% or less, 0.05 mass% or less, or 0.02 mass% or less. From these viewpoints, the content of the ammonium salt may be more than 0% by mass and not more than 10% by mass, more than 0% by mass and not more than 5% by mass, more than 0% by mass and not more than 2% by mass, more than 0% by mass and not more than 1% by mass, 0.01 to 10% by mass, 0.01 to 5% by mass, 0.01 to 2% by mass, 0.01 to 1% by mass, 0.1 to 10% by mass, 0.1 to 5% by mass, 0.1 to 2% by mass, 0.1 to 1% by mass, 0.3 to 10% by mass, 0.3 to 5% by mass, 0.3 to 2% by mass, or 0.3 to 1% by mass.

[0061] From the viewpoint of easily improving the removal rate of metal materials, the content of the ammonium salt other than peroxide may be in the following ranges based on the total mass of the polishing liquid: The content of the ammonium salt other than peroxide may be more than 0 mass%, 0.01 mass% or more, 0.02 mass% or more, 0.05 mass% or more, 0.1 mass% or more, 0.2 mass% or more, 0.3 mass% or more, 0.4 mass% or more, 0.45 mass% or more, 0.5 mass% or more, more than 0.5 mass%, 0.6 mass% or more, 0.7 mass% or more, 0.8 mass% or more, or 0.85 mass% or more. The content of ammonium salts different from peroxides is 10% by mass or less, 8% by mass or less, 5% by mass or less, 4% by mass or less, 3% by mass or less, 2% by mass or less, 1.8% by mass or less, 1.7% by mass or less, 1.6% by mass or less, 1.5% by mass or less, 1.4% by mass or less, 1.3% by mass or less, 1.2% by mass or less, 1.1% by mass or less, It may be 1% by mass or less, 0.9% by mass or less, 0.85% by mass or less, 0.8% by mass or less, 0.7% by mass or less, 0.6% by mass or less, 0.5% by mass or less, 0.45% by mass or less, 0.4% by mass or less, 0.3% by mass or less, 0.2% by mass or less, 0.1% by mass or less, 0.05% by mass or less, or 0.02% by mass or less. From these viewpoints, the content of the ammonium salt different from peroxide may be more than 0% by mass and not more than 10% by mass, more than 0% by mass and not more than 5% by mass, more than 0% by mass and not more than 2% by mass, more than 0% by mass and not more than 1% by mass, 0.01 to 10% by mass, 0.01 to 5% by mass, 0.01 to 2% by mass, 0.01 to 1% by mass, 0.1 to 10% by mass, 0.1 to 5% by mass, 0.1 to 2% by mass, 0.1 to 1% by mass, 0.3 to 10% by mass, 0.3 to 5% by mass, 0.3 to 2% by mass, or 0.3 to 1% by mass.

[0062] When the ammonium salt contains a peroxide, the content of the peroxide (ammonium salt) may be within the following ranges based on the total mass of the polishing liquid, from the viewpoint of easily improving the polishing rate of metal materials. The content of the peroxide (ammonium salt) may be more than 0% by mass, 0.01% by mass or more, 0.05% by mass or more, 0.1% by mass or more, 0.2% by mass or more, 0.3% by mass or more, 0.4% by mass or more, 0.5% by mass or more, more than 0.5% by mass, 0.6% by mass or more, 0.65% by mass or more, 0.7% by mass or more, 0.75% by mass or more, or 0.8% by mass or more. The content of the peroxide (ammonium salt) may be 5% by mass or less, 4% by mass or less, 3% by mass or less, 2% by mass or less, 1.5% by mass or less, 1.2% by mass or less, 1% by mass or less, 0.9% by mass or less, or 0.8% by mass or less. From these viewpoints, the content of peroxide (ammonium salt) may be more than 0% by mass and not more than 5% by mass, 0.01 to 5% by mass, 0.1 to 5% by mass, 0.5 to 5% by mass, more than 0% by mass and not more than 1% by mass, 0.01 to 1% by mass, 0.1 to 1% by mass, or 0.5 to 1% by mass.

[0063] From the viewpoint of easily improving the polishing rate for metal materials, the content of the ammonium salt may be in the following ranges per 100 parts by mass of the abrasive grains: more than 0 parts by mass, 1 part by mass or more, 2 parts by mass or more, 5 parts by mass or more, 10 parts by mass or more, 20 parts by mass or more, 30 parts by mass or more, 40 parts by mass or more, 45 parts by mass or more, 50 parts by mass or more, 60 parts by mass or more, 70 parts by mass or more, 80 parts by mass or more, 85 parts by mass or more, 90 parts by mass or more, 100 parts by mass or more, 110 parts by mass or more, or 120 parts by mass or more. The content of ammonium salt is 1000 parts by mass or less, 800 parts by mass or less, 500 parts by mass or less, 400 parts by mass or less, 300 parts by mass or less, 200 parts by mass or less, 180 parts by mass or less, 170 parts by mass or less, 160 parts by mass or less, 150 parts by mass or less, 140 parts by mass or less, 130 parts by mass or less, 120 parts by mass or less , 110 parts by mass or less, 100 parts by mass or less, 90 parts by mass or less, 85 parts by mass or less, 80 parts by mass or less, 70 parts by mass or less, 60 parts by mass or less, 50 parts by mass or less, 45 parts by mass or less, 40 parts by mass or less, 30 parts by mass or less, 20 parts by mass or less, 10 parts by mass or less, 5 parts by mass or less, or 2 parts by mass or less. From these viewpoints, the content of the ammonium salt may be more than 0 parts by mass and not more than 1000 parts by mass, more than 0 parts by mass and not more than 500 parts by mass, more than 0 parts by mass and not more than 200 parts by mass, more than 0 parts by mass and not more than 100 parts by mass, 1 to 1000 parts by mass, 1 to 500 parts by mass, 1 to 200 parts by mass, 1 to 100 parts by mass, 10 to 1000 parts by mass, 10 to 500 parts by mass, 10 to 200 parts by mass, 10 to 100 parts by mass, 30 to 1000 parts by mass, 30 to 500 parts by mass, 30 to 200 parts by mass, or 30 to 100 parts by mass.

[0064] From the viewpoint of readily improving the polishing rate for metal materials, the content of the ammonium salt other than peroxide may be in the following ranges per 100 parts by mass of the abrasive grains: The content of the ammonium salt other than peroxide may be more than 0 parts by mass, 1 part by mass or more, 2 parts by mass or more, 5 parts by mass or more, 10 parts by mass or more, 20 parts by mass or more, 30 parts by mass or more, 40 parts by mass or more, 45 parts by mass or more, 50 parts by mass or more, 60 parts by mass or more, 70 parts by mass or more, 80 parts by mass or more, or 85 parts by mass or more. The content of ammonium salts different from peroxides is 1000 parts by mass or less, 800 parts by mass or less, 500 parts by mass or less, 400 parts by mass or less, 300 parts by mass or less, 200 parts by mass or less, 180 parts by mass or less, 170 parts by mass or less, 160 parts by mass or less, 150 parts by mass or less, 140 parts by mass or less, 130 parts by mass or less, 120 parts by mass or less It may be less than or equal to 110 parts by weight, less than 100 parts by weight, less than 90 parts by weight, less than 85 parts by weight, less than 80 parts by weight, less than 70 parts by weight, less than 60 parts by weight, less than 50 parts by weight, less than 45 parts by weight, less than 40 parts by weight, less than 30 parts by weight, less than 20 parts by weight, less than 10 parts by weight, less than 5 parts by weight, or less than 2 parts by weight. From these viewpoints, the content of the ammonium salt different from peroxide may be more than 0 parts by mass and not more than 1000 parts by mass, more than 0 parts by mass and not more than 500 parts by mass, more than 0 parts by mass and not more than 200 parts by mass, more than 0 parts by mass and not more than 100 parts by mass, 1 to 1000 parts by mass, 1 to 500 parts by mass, 1 to 200 parts by mass, 1 to 100 parts by mass, 10 to 1000 parts by mass, 10 to 500 parts by mass, 10 to 200 parts by mass, 10 to 100 parts by mass, 30 to 1000 parts by mass, 30 to 500 parts by mass, 30 to 200 parts by mass, or 30 to 100 parts by mass.

[0065] When the ammonium salt contains a peroxide, the content of the peroxide (ammonium salt) may be within the following ranges per 100 parts by weight of the abrasive grains, from the viewpoint of easily improving the polishing rate of metal materials. The content of the peroxide (ammonium salt) may be more than 0 parts by weight, 1 part by weight or more, 5 parts by weight or more, 10 parts by weight or more, 20 parts by weight or more, 30 parts by weight or more, 40 parts by weight or more, 50 parts by weight or more, 60 parts by weight or more, 65 parts by weight or more, 70 parts by weight or more, 75 parts by weight or more, or 80 parts by weight or more. The content of the peroxide (ammonium salt) may be 500 parts by weight or less, 400 parts by weight or less, 300 parts by weight or less, 200 parts by weight or less, 150 parts by weight or less, 120 parts by weight or less, 100 parts by weight or less, 90 parts by weight or less, 80 parts by weight or less, 75 parts by weight or less, 70 parts by weight or less, 65 parts by weight or less, 60 parts by weight or less, 50 parts by weight or less, or 40 parts by weight or less. From these viewpoints, the content of the peroxide (ammonium salt) may be more than 0 parts by mass and not more than 500 parts by mass, 1 to 500 parts by mass, 10 to 500 parts by mass, 50 to 500 parts by mass, more than 0 parts by mass and not more than 100 parts by mass, 1 to 100 parts by mass, 10 to 100 parts by mass, or 50 to 100 parts by mass.

[0066] The polishing liquid according to this embodiment may contain ammonia. It is presumed that the ammonia forms a complex with the metal material, which facilitates an improvement in the removal rate of the metal material. From the viewpoint of facilitating an improvement in the removal rate of the metal material, the polishing liquid according to this embodiment may contain at least one selected from the group consisting of ammonium cations and ammonia, and may contain at least one selected from the group consisting of ammonium salts (such as the ammonium salts of the inorganic acids described above and the ammonium salts of the organic acids described above) and ammonia.

[0067] From the viewpoint of easily improving the polishing rate for metal materials, the ammonia content may be within the following ranges based on the total mass of the polishing liquid. The ammonia content may be more than 0% by mass, 0.01% by mass or more, 0.03% by mass or more, 0.05% by mass or more, 0.08% by mass or more, 0.1% by mass or more, 0.12% by mass or more, 0.15% by mass or more, 0.2% by mass or more, 0.25% by mass or more, or 0.3% by mass or more. The ammonia content may be 5% by mass or less, 4% by mass or less, 3% by mass or less, 2% by mass or less, 1.5% by mass or less, 1% by mass or less, 0.8% by mass or less, 0.6% by mass or less, 0.5% by mass or less, 0.4% by mass or less, 0.3% by mass or less, 0.25% by mass or less, 0.2% by mass or less, 0.15% by mass or less, or 0.1% by mass or less. From these viewpoints, the ammonia content may be more than 0% by mass and not more than 5% by mass, 0.01 to 5% by mass, 0.1 to 5% by mass, 0.2 to 5% by mass, more than 0% by mass and not more than 2% by mass, 0.01 to 2% by mass, 0.1 to 2% by mass, 0.2 to 2% by mass, more than 0% by mass and not more than 0.5% by mass, 0.01 to 0.5% by mass, 0.1 to 0.5% by mass, or 0.2 to 0.5% by mass.

[0068] The ammonia content may be within the following ranges per 100 parts by mass of abrasive grains, from the viewpoint of readily improving the polishing rate for metal materials. The ammonia content may be more than 0 parts by mass, 1 part by mass or more, 3 parts by mass or more, 5 parts by mass or more, 8 parts by mass or more, 10 parts by mass or more, 12 parts by mass or more, 15 parts by mass or more, 20 parts by mass or more, 25 parts by mass or more, or 30 parts by mass or more. The ammonia content may be 500 parts by mass or less, 400 parts by mass or less, 300 parts by mass or less, 200 parts by mass or less, 150 parts by mass or less, 100 parts by mass or less, 80 parts by mass or less, 60 parts by mass or less, 50 parts by mass or less, less than 50 parts by mass, 40 parts by mass or less, 30 parts by mass or less, 25 parts by mass or less, 20 parts by mass or less, 15 parts by mass or less, 10 parts by mass or less, 8 parts by mass or less, or 5 parts by mass or less. From these viewpoints, the content of ammonia may be more than 0 parts by mass and not more than 500 parts by mass, 1 to 500 parts by mass, 10 to 500 parts by mass, 20 to 500 parts by mass, more than 0 parts by mass and not more than 200 parts by mass, 1 to 200 parts by mass, 10 to 200 parts by mass, 20 to 200 parts by mass, more than 0 parts by mass and not more than 50 parts by mass, 1 to 50 parts by mass, 10 to 50 parts by mass, or 20 to 50 parts by mass.

[0069] From the viewpoint of easily improving the polishing rate for metal materials, the content of ammonia may be in the following ranges relative to 100 parts by mass of the ammonium salt: The content of ammonia may be more than 0 parts by mass, 1 part by mass or more, 5 parts by mass or more, 10 parts by mass or more, 15 parts by mass or more, 20 parts by mass or more, 25 parts by mass or more, 30 parts by mass or more, 35 parts by mass or more, 36 parts by mass or more, 40 parts by mass or more, 50 parts by mass or more, 60 parts by mass or more, 80 parts by mass or more, 100 parts by mass or more, 150 parts by mass or more, 200 parts by mass or more, 300 parts by mass or more, 500 parts by mass or more, 1000 parts by mass or more, or 1500 parts by mass or more. The ammonia content may be 2000 parts by mass or less, 1500 parts by mass or less, 1000 parts by mass or less, 500 parts by mass or less, 300 parts by mass or less, 200 parts by mass or less, 150 parts by mass or less, 100 parts by mass or less, 80 parts by mass or less, 60 parts by mass or less, 50 parts by mass or less, 40 parts by mass or less, 36 parts by mass or less, 35 parts by mass or less, 30 parts by mass or less, 25 parts by mass or less, 20 parts by mass or less, or 15 parts by mass or less. From these viewpoints, the ammonia content may be more than 0 parts by mass and 2000 parts by mass or less, 10 to 2000 parts by mass, 100 to 2000 parts by mass, 300 to 2000 parts by mass, more than 0 parts by mass and 1500 parts by mass or less, 10 to 1500 parts by mass, 100 to 1500 parts by mass, 300 to 1500 parts by mass, or 1 to 200 parts by mass.

[0070] The polishing liquid according to this embodiment may contain an anticorrosive agent (anticorrosive agent for metal materials) as a compound having an anticorrosive effect on metal materials. The anticorrosive agent forms a protective film on the metal material, thereby suppressing etching of the metal material and reducing roughness of the polished surface.

[0071] The corrosion inhibitor may include at least one selected from the group consisting of triazole compounds, pyridine compounds, pyrazole compounds, pyrimidine compounds, imidazole compounds, guanidine compounds, thiazole compounds, tetrazole compounds, triazine compounds, and hexamethylenetetramine. The term "compound" is a general term for compounds having the skeleton; for example, "triazole compound" refers to a compound having a triazole skeleton. From the viewpoint of easily achieving a suitable corrosion inhibitory effect, the corrosion inhibitor may include at least one selected from the group consisting of triazole compounds, pyridine compounds, imidazole compounds, tetrazole compounds, triazine compounds, and hexamethylenetetramine, may include a triazole compound, or may include a benzotriazole compound.

[0072] Examples of triazole compounds include 1,2,3-triazole, 1,2,4-triazole, 3-amino-1H-1,2,4-triazole, benzotriazole, 1-hydroxybenzotriazole, 1-dihydroxypropylbenzotriazole, 2,3-dicarboxypropylbenzotriazole, 4-hydroxybenzotriazole, 4-carboxy-1H-benzotriazole, 4-carboxy-1H-benzotriazole methyl ester (methyl 1H-benzotriazole-4-carboxylate), 4-carboxy-1H-benzotriazole butyl ester (butyl 1H-benzotriazole-4-carboxylate), 4-carboxy-1H-benzotriazole octyl ester (octyl 1H-benzotriazole-4-carboxylate), 5-hexylbenzotriazole, [1,2,3-benzotriazole] Triazolyl-1-methyl][1,2,4-triazolyl-1-methyl][2-ethylhexyl]amine, tolyltriazole, naphthotriazole, bis[(1-benzotriazolyl)methyl]phosphonic acid, 3H-1,2,3-triazolo[4,5-b]pyridin-3-ol, 1H-1,2,3-triazolo[4,5-b]pyridine, 1-acetyl-1H-1,2,3-triazolo[4,5-b] Examples of suitable anticorrosive agents include pyridine, 1,2,4-triazolo[1,5-a]pyrimidine, 2-methyl-5,7-diphenyl-[1,2,4]triazolo[1,5-a]pyrimidine, 2-methylsulfanyl-5,7-diphenyl-[1,2,4]triazolo[1,5-a]pyrimidine, and 2-methylsulfanyl-5,7-diphenyl-4,7-dihydro-[1,2,4]triazolo[1,5-a]pyrimidine. Compounds having a triazole skeleton and other skeletons in one molecule are classified as triazole compounds. The polishing liquid according to this embodiment may contain a triazole compound having a hydroxy group, or may contain 1-hydroxybenzotriazole, in order to easily obtain a suitable anticorrosion effect.

[0073] The content D of the anticorrosive agent, triazole compound, or benzotriazole compound may be in the following range based on the total mass of the polishing liquid, from the viewpoint of easily obtaining a suitable anticorrosion effect: The content D may be more than 0 mass%, 0.001 mass% or more, 0.003 mass% or more, 0.005 mass% or more, 0.008 mass% or more, 0.01 mass% or more, 0.02 mass% or more, 0.025 mass% or more, 0.03 mass% or more, 0.04 mass% or more, 0.05 mass% or more, 0.08 mass% or more, 0.1 mass% or more, 0.3 mass% or more, 0.5 mass% or more, or 1 mass% or more. Content D may be 2% by mass or less, 1.5% by mass or less, 1% by mass or less, 0.5% by mass or less, 0.3% by mass or less, 0.1% by mass or less, 0.08% by mass or less, 0.05% by mass or less, 0.04% by mass or less, 0.03% by mass or less, 0.025% by mass or less, 0.02% by mass or less, 0.01% by mass or less, or 0.008% by mass or less. From these viewpoints, the content D may be more than 0% by mass and not more than 2% by mass, 0.001 to 2% by mass, 0.005 to 2% by mass, 0.01 to 2% by mass, more than 0% by mass and not more than 1% by mass, 0.001 to 1% by mass, 0.005 to 1% by mass, 0.01 to 1% by mass, more than 0% by mass and not more than 0.1% by mass, 0.001 to 0.1% by mass, 0.005 to 0.1% by mass, or 0.01 to 0.1% by mass.

[0074] The polishing liquid according to this embodiment may contain a basic hydroxide. The use of a basic hydroxide tends to improve the polishing rate of metal materials. Examples of basic hydroxides include alkali metal hydroxides such as sodium hydroxide and potassium hydroxide; alkaline earth metal hydroxides; and tetramethylammonium hydroxide (TMAH).

[0075] From the viewpoint of easily improving the polishing rate for metal materials, the content of the basic hydroxide may be in the following ranges based on the total mass of the polishing liquid. The content of the basic hydroxide may be more than 0 mass%, 0.01 mass% or more, 0.05 mass% or more, 0.1 mass% or more, 0.15 mass% or more, 0.2 mass% or more, 0.25 mass% or more, 0.3 mass% or more, 0.35 mass% or more, 0.36 mass% or more, 0.4 mass% or more, 0.45 mass% or more, or 0.48 mass% or more. The content of the basic hydroxide may be 5 mass% or less, 4 mass% or less, 3 mass% or less, 2 mass% or less, 1 mass% or less, 0.8 mass% or less, 0.6 mass% or less, 0.5 mass% or less, 0.48 mass% or less, 0.45 mass% or less, 0.4 mass% or less, or 0.36 mass% or less. From these viewpoints, the content of the basic hydroxide may be more than 0% by mass and not more than 5% by mass, 0.01 to 5% by mass, 0.1 to 5% by mass, more than 0% by mass and not more than 1% by mass, 0.01 to 1% by mass, or 0.1 to 1% by mass.

[0076] The polishing liquid according to this embodiment may contain a peroxide other than the above-mentioned ammonium salt, or may not contain such a peroxide. Examples of peroxides include potassium persulfate, hydrogen peroxide, ferric nitrate, ferrous sulfate, ozone, hypochlorous acid, hypochlorite, potassium periodate, and peracetic acid. The polishing liquid according to this embodiment may not contain hydrogen peroxide. The peroxide content or hydrogen peroxide content may be 0.1% by mass or less, less than 0.1% by mass, 0.01% by mass or less, 0.001% by mass or less, or substantially 0% by mass, based on the total mass of the polishing liquid.

[0077] The polishing liquid according to this embodiment may be free of dihydroxyethylglycine, aminopolycarboxylic acid, and nonmetallic salt of aminopolycarboxylic acid. The content (total amount) of dihydroxyethylglycine, aminopolycarboxylic acid, and nonmetallic salt of aminopolycarboxylic acid may be 0.05% by mass or less, less than 0.05% by mass, 0.01% by mass or less, 0.001% by mass or less, or substantially 0% by mass, based on the total mass of the polishing liquid.

[0078] The polishing liquid according to this embodiment may be free of a compound having an unsaturated carboxylic acid monomer unit, and may be free of a polycarboxylic acid polymer dispersant. The content of the compound having an unsaturated carboxylic acid monomer unit or the content of the polycarboxylic acid polymer dispersant may be 0.0005% by mass or less, less than 0.0005% by mass, 0.0001% by mass or less, 0.00001% by mass or less, or substantially 0% by mass, based on the total mass of the polishing liquid.

[0079] (pH) The pH of the polishing liquid according to this embodiment may be in the following ranges, from the viewpoint of easily improving the polishing rate for a resin-containing member to be polished and the polishing rate for metal materials: The pH of the polishing liquid may be 3.00 or more, 4.00 or more, more than 4.00, 5.00 or more, more than 5.00, 6.00 or more, 7.00 or more, more than 7.00, 7.50 or more, 8.00 or more, more than 8.00, 8.50 or more, 9.00 or more, 9.30 or more, 9.40 or more, 9.50 or more, 9.60 or more, 9.80 or more, 10.00 or more, more than 10.00, 10.20 or more, 10.30 or more, 10.50 or more, or 10.80 or more. The pH of the polishing liquid may be 13.00 or less, 12.00 or less, 11.80 or less, 11.50 or less, 11.00 or less, 10.80 or less, 10.50 or less, 10.30 or less, 10.20 or less, 10.00 or less, less than 10.00, 9.80 or less, 9.60 or less, 9.50 or less, 9.40 or less, 9.30 or less, 9.00 or less, 8.50 or less, or 8.00 or less. From these viewpoints, the pH of the polishing liquid may be 3.00 to 13.00, 7.00 to 13.00, 8.00 to 13.00, 9.00 to 13.00, 3.00 to 12.00, 7.00 to 12.00, 8.00 to 12.00, 9.00 to 12.00, 3.00 to 11.00, 7.00 to 11.00, 8.00 to 11.00, or 9.00 to 11.00. The pH of the polishing liquid can be adjusted by the above-mentioned acid component, ammonia, basic hydroxide, etc.

[0080] The pH of the polishing solution according to this embodiment can be measured with a pH meter (e.g., Model PHL-40 manufactured by DKK-TOA Corporation). For example, after two-point calibration of the pH meter using a phthalate pH buffer solution (pH: 4.01) and a neutral phosphate pH buffer solution (pH: 6.86) as standard buffer solutions, the pH meter electrode is placed in the polishing solution, and the pH value is measured after stabilization for at least two minutes. At this time, the liquid temperatures of both the standard buffer solution and the polishing solution are 25°C.

[0081] (Storage status) The polishing liquid according to this embodiment may be stored as a stock solution for a polishing liquid with a reduced amount of water compared to when it is used. The stock solution for a polishing liquid is a stock solution for obtaining a polishing liquid, and the polishing liquid can be obtained by diluting the stock solution for a polishing liquid with water before or at the time of use. The dilution ratio is, for example, 1.5 times or more.

[0082] The polishing liquid according to this embodiment may be stored as a single-component polishing liquid containing at least abrasive grains and ether compound A, or as a multiple-component polishing liquid containing a slurry (first liquid) and an additive liquid (second liquid). In the multiple-component polishing liquid, the components of the polishing liquid are separated into a slurry and an additive liquid so that the slurry and the additive liquid are mixed to form the polishing liquid. The slurry contains, for example, at least abrasive grains and water. The additive liquid contains, for example, at least ether compound A and water. Components other than the abrasive grains, ether compound A, and water may be contained in the additive liquid. The components of the polishing liquid may be separated into three or more liquids for storage. In the multiple-component polishing liquid, the slurry and the additive liquid may be mixed to prepare the polishing liquid immediately before or during polishing. The slurry and the additive liquid in the multiple-component polishing liquid may be supplied onto the polishing platen, respectively, and the slurry and the additive liquid may be mixed on the polishing platen to prepare the polishing liquid.

[0083] <Polishing method> The polishing method according to this embodiment includes a polishing step in which a resin-containing member is polished using the polishing liquid according to this embodiment. In the polishing step, the surface of the member to be polished can be polished, and the surface on which resin is present can be polished. In the polishing step, at least a portion of the resin in the member to be polished can be polished away. The polishing liquid used in the polishing step may be the one-component polishing liquid described above, a polishing liquid obtained by diluting the polishing liquid storage liquid described above with water, or a polishing liquid obtained by mixing the slurry and additive liquid in the multiple-component polishing liquid described above. The member to be polished is not particularly limited, and may be a wafer (e.g., a semiconductor wafer) or a chip (e.g., a semiconductor chip). The member to be polished may be a wiring board or a circuit board.

[0084] The member to be polished may contain a resin and a silicon compound (e.g., silicon oxide), or may contain particles containing a resin and a silicon compound. In the polishing process, a surface to be polished in which a resin and a silicon compound are present can be polished. The member to be polished may contain a resin and a metal material (e.g., copper-based metal). In the polishing process, a surface to be polished in which a resin and a metal material are present can be polished. The member to be polished may contain a resin, a silicon compound (e.g., silicon oxide), and a metal material (e.g., copper-based metal), or may contain a resin, particles containing a silicon compound, and a metal material. In the polishing process, a surface to be polished in which a resin, a silicon compound, and a metal material are present can be polished. Examples of metals in the metal material include copper, cobalt, tantalum, aluminum, titanium, tungsten, manganese, etc. Examples of silicon compounds include silicon oxides (e.g., SiO2), SiOC, silicon nitrides (e.g., SiN), etc. In the polishing process, the resin may contain an epoxy resin, and the polished member may contain resin and particles containing silicon oxide. The shape of the polished member is not particularly limited, and may be, for example, a film-like structure other than the above-mentioned structure. The polished member may have a substrate having concave and convex portions on its surface and a polishing target (at least one selected from the group consisting of resin, silicon compound, and metal material). The polished member may contain another polishing target material (e.g., an insulating material) in addition to at least one selected from the group consisting of resin, silicon compound, and metal material.

[0085] <Manufacturing method etc.> The component manufacturing method according to this embodiment includes a component fabrication step in which a component is obtained using a polished member (substrate) polished by the polishing method according to this embodiment. The component according to this embodiment is a component obtained by the component manufacturing method according to this embodiment. The component according to this embodiment is not particularly limited, and may be an electronic component (e.g., a semiconductor component such as a semiconductor package), a wafer (e.g., a semiconductor wafer), or a chip (e.g., a semiconductor chip). As one aspect of the component manufacturing method according to this embodiment, an electronic component is obtained using a polished member polished by the polishing method according to this embodiment. As one aspect of the component manufacturing method according to this embodiment, a semiconductor component (e.g., a semiconductor package) is obtained using a polished member polished by the polishing method according to this embodiment. The component manufacturing method according to this embodiment may include a polishing step in which a polished member is polished by the polishing method according to this embodiment before the component fabrication step.

[0086] The component manufacturing method according to this embodiment may include, as one aspect of the component manufacturing process, a singulation step of singulating a polished member (substrate) polished by the polishing method according to this embodiment. The singulation step may be, for example, a step of dicing a wafer (e.g., a semiconductor wafer) polished by the polishing method according to this embodiment to obtain chips (e.g., semiconductor chips). As one aspect of the component manufacturing method according to this embodiment, the electronic component manufacturing method according to this embodiment may include a step of singulating a polished member polished by the polishing method according to this embodiment to obtain electronic components (e.g., semiconductor components). As one aspect of the component manufacturing method according to this embodiment, the semiconductor component manufacturing method according to this embodiment may include a step of singulating a polished member polished by the polishing method according to this embodiment to obtain semiconductor components (e.g., semiconductor packages).

[0087] The component manufacturing method according to this embodiment may include, as one aspect of the component manufacturing process, a connecting process for connecting (e.g., electrically connecting) a polished member (substrate) polished by the polishing method according to this embodiment to another connected object. The connected object to be connected to the polished member polished by the polishing method according to this embodiment is not particularly limited and may be the polished member polished by the polishing method according to this embodiment, or may be a connected object different from the polished member polished by the polishing method according to this embodiment. In the connecting process, the polished member and the connected object may be directly connected (connected in a state where the polished member and the connected object are in contact with each other), or the polished member and the connected object may be connected via another member (such as a conductive member). The connecting process may be performed before the singulation process, after the singulation process, or before or after the singulation process.

[0088] The connecting step may be a step of connecting a polished surface of a member to be polished that has been polished by the polishing method according to this embodiment to a connected body, or a step of connecting a connecting surface of a member to be polished that has been polished by the polishing method according to this embodiment to a connecting surface of a connected body. The connecting surface of the member to be polished may be a polished surface polished by the polishing method according to this embodiment. The connecting step can obtain a connected body comprising a member to be polished and a connected body. In the connecting step, if the connecting surface of the member to be polished has a metal portion, the connected body may be brought into contact with the metal portion. In the connecting step, if the connecting surface of the member to be polished has a metal portion and the connecting surface of the connected body has a metal portion, the metal portions may be brought into contact with each other. The metal portion may contain copper.

[0089] The device according to this embodiment (for example, an electronic device such as a semiconductor device) comprises at least one selected from the group consisting of a polished member polished by the polishing method according to this embodiment and a part according to this embodiment. [Example]

[0090] Hereinafter, the present disclosure will be specifically described based on examples, but the present disclosure is not limited to these examples.

[0091] <Preparation of polishing solution> A polishing solution having the composition shown in Table 1 was obtained by mixing the components listed in Table 1 with distilled water. Table 1 shows the content (unit: mass%) of each component based on the total mass of the polishing solution, with the remainder being distilled water. The cerium oxide particles used were "HS-8005" manufactured by Showa Denko Materials Co., Ltd. "MMB" stands for 3-methoxy-3-methyl-1-butanol, "HBTA" stands for 1-hydroxybenzotriazole, and "BTA" stands for benzotriazole. The polyglycerin used was "PGL750" manufactured by Sakamoto Pharmaceutical Co., Ltd. (glycerin decamer, weight-average molecular weight: 750, hydroxyl value: 870-910). MMB, polyglycerin, and 1-propoxy-2-propanol correspond to ether compound A.

[0092] <Average grain size of abrasive grains> The average particle size of the abrasive grains in the polishing solution of each example was determined using a Microtrac MT3300EXII manufactured by Microtrac Bell Co., Ltd. In each example, the average particle size D50 was 341 nm, and the average particle size D80 was 609 nm.

[0093] <pH of polishing solution> The pH of the polishing solution was measured using a pH meter (Model PHL-40, manufactured by DKK-TOA Corporation). After two-point calibration of the pH meter using a phthalate pH buffer solution (pH: 4.01) and a neutral phosphate pH buffer solution (pH: 6.86) as standard buffer solutions, the pH meter electrode was placed in the polishing solution and the pH value was measured after stabilization for at least two minutes. The results are shown in Table 1.

[0094] <Polishing evaluation> As substrate A for evaluating the removal rate of a resin-containing polished member, a substrate (a substrate comprising a base portion containing epoxy resin and particles containing silicon oxide, and a metal portion containing copper and disposed in an opening formed in the base portion (an opening extending in the thickness direction of the base (thickness direction of the base portion)) was prepared. The metal portion extends in the thickness direction of the base (thickness direction of the base portion) and contains copper, and a substrate portion (a substrate portion containing epoxy resin and particles containing silicon oxide) covering the outer periphery of the metal portion) was prepared. Multiple metal portions with a diameter of 200 μm or less were arranged in an array. The cross-sectional shape of the metal portion perpendicular to the thickness direction of the base was circular. Substrate A had a polishing surface on which epoxy resin, particles containing silicon oxide, and copper were present.

[0095] As substrate B for evaluating the copper removal rate in Examples 2, 3, and 9 to 11, a substrate having a copper film formed on a φ300 mm silicon wafer was prepared.

[0096] In a polishing machine (Applied Materials, product name: Reflexion LK), a substrate (Substrate A or Substrate B) was attached to a holder for attaching a substrate to which an adsorption pad was attached. The holder was placed on a surface plate to which a porous urethane resin pad was attached, with the surface to be polished (for Substrate A, the area where the above-mentioned metal part was located) facing the pad. The above-mentioned polishing liquid was supplied onto the pad at a supply rate of 350 mL / min, and the substrate was pressed against the pad with a polishing load of 4 psi. At this time, the surface plate was held for 147 min. -1 , holder 153min -1 The polishing was carried out by rotating the substrate at a speed of 1000 rpm. The polishing time for substrate A was 5 minutes, and the polishing time for substrate B was 1 minute. After polishing, the substrates were thoroughly washed with pure water and then dried.

[0097] A stylus-type profilometer was used to measure the change in thickness of the substrate A before and after polishing, and the polishing rate of the resin-containing polished member was determined. The average thickness change was measured at five locations: the center of the substrate and four locations on the periphery of the substrate (four locations equally spaced from each other and centered on the center of the substrate). The results are shown in Table 1.

[0098] A metal film thickness measuring instrument (Hitachi Kokusai Electric Inc., product name: VR-120 / 08S) was used to measure the change in thickness of the copper film on substrate B before and after polishing, and the copper polishing rate was calculated. The thickness was measured at 65 equally spaced points on a line (diameter) passing through the center of substrate B, and the average value was taken as the copper film thickness. The results are shown in Table 1.

[0099] [Table 1] [Explanation of symbols]

[0100] 10... Member to be polished, 12... Base material part, 12a... Resin, 12b... Particles, 14... Metal part.

Claims

1. The abrasive grains contain cerium oxide and an ether compound having a hydroxy group, A polishing liquid for polishing a resin-containing member to be polished, wherein the ether compound includes a compound having one ether group.

2. The polishing liquid according to claim 1 , wherein the ether compound comprises an alkoxy alcohol.

3. The polishing liquid according to claim 2 , wherein the ether compound comprises an alkoxy alcohol having a molecular weight of less than 200.

4. 3. The polishing liquid according to claim 2, wherein the alkoxy alcohol comprises a compound having an alkoxy group having 1 to 5 carbon atoms.

5. 3. The polishing liquid according to claim 2, wherein the alkoxy alcohol comprises 1-propoxy-2-propanol.

6. 3. The polishing liquid according to claim 2, wherein the alkoxy alcohol comprises 3-methoxy-3-methyl-1-butanol.

7. 3. The polishing liquid according to claim 2, wherein the content of the alkoxy alcohol is 0.2 to 0.8 mass % based on the total mass of the polishing liquid.

8. The polishing liquid according to claim 2 , wherein the ether compound further comprises a polyether.

9. The polishing fluid of claim 8 , wherein the polyether comprises polyglycerin.

10. 9. The polishing liquid according to claim 8, wherein the content of the polyether is 0.5 to 3 mass % based on the total mass of the polishing liquid.

11. 2. The polishing liquid according to claim 1, wherein the content of the abrasive grains is 0.5 to 2 mass % based on the total mass of the polishing liquid.

12. The polishing liquid according to claim 1 , further comprising an organic acid component.

13. 2. The polishing liquid according to claim 1, further comprising at least one selected from the group consisting of ammonium cations and ammonia.

14. 2. The polishing liquid according to claim 1, wherein the pH is 9.00 to 11.

00.

15. A polishing method comprising polishing a resin-containing member to be polished using the polishing liquid according to any one of claims 1 to 14.

16. The polishing method according to claim 15 , wherein the resin comprises an epoxy resin.

17. The polishing method according to claim 15, wherein the polished member further contains particles containing silicon oxide.

18. A method for manufacturing a component, comprising obtaining a component using a member to be polished by the polishing method according to claim 15.

19. A method for producing a semiconductor component, comprising obtaining a semiconductor component using a polished member polished by the polishing method according to claim 15.

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