magnetic sensor device

Abstract

To provide a magnetic sensor device in which influence of stress applied is suppressed.SOLUTION: A magnetic sensor device 1 comprises magnetic sensors 10, 20, 30, and a support medium 4. The center of mass of an element arrangement area of the magnetic sensors 10, 20, 30 is displaced from center of mass C4 of a reference plane 4a of the support medium 4. Each of the magnetic sensors 10, 20, 30 includes four resistance parts composed of a plurality of MR elements. Magnetization of a free layer 54 in two resistance parts contains a component in a third magnetization direction. Magnetization of the free layer 54 in each of the remaining two resistance parts contains a component in a fourth magnetization direction opposite to the third magnetization direction.SELECTED DRAWING: Figure 8

Description

[Technical Field]

[0001] The present invention relates to a magnetic sensor device including a magnetic sensor and a support. [Background technology]

[0002] In recent years, magnetic sensor devices that detect components of an applied magnetic field in multiple directions have been used in a variety of applications, including magnetic position detection devices that detect the position of a magnet that can move three-dimensionally.

[0003] A magnetic position detection device includes, for example, a magnetic sensor device, a magnet that can move along a predetermined spherical surface centered on the magnetic sensor device, and a signal processing circuit. The magnetic sensor device detects three components in three different directions of a magnetic field generated by the magnet and applied to the magnetic sensor device, and generates three detection signals corresponding to the three components. The signal processing circuit generates position information representing the position of the magnet based on the three detection signals. Patent Document 1 discloses a three-axis magnetic sensor equipped with an X-axis sensor, a Y-axis sensor, and a Z-axis sensor.

[0004] In order to improve the accuracy of position information, it is necessary to improve the detection accuracy of a magnetic sensor device. Patent Document 2 discloses a magnetic sensor in which the magnetization orientation of the free layer of a first magnetoresistive element and the magnetization orientation of the free layer of a second magnetoresistive element are opposite to each other, thereby reducing the deterioration in detection accuracy of an external magnetic field caused by variations in the magnetization orientation of the pinned layer. Furthermore, Patent Documents 3 and 4 disclose magnetic sensors in which the magnetization directions of the free magnetic layers of a pair of magnetoresistive elements are opposite to each other, thereby suppressing the deterioration in linearity of the sensor output caused by a misalignment in the direction of the magnetic field to be measured. [Prior art documents] [Patent documents]

[0005] [Patent Document 1] Japanese Patent Application Laid-Open No. 2006-308573 [Patent Document 2] Japanese Patent Application Laid-Open No. 2015-95630 [Patent Document 3] International Publication No. 2012 / 172946 [Patent Document 4] International Publication No. 2015 / 125699 Summary of the Invention [Problem to be solved by the invention]

[0006] However, when using a position detection device, an unintended external force may be applied to the substrate on which the magnetic sensor device is mounted. Furthermore, the temperature of the substrate may change due to environmental changes. In these cases, stress may be applied to the magnetic sensor device, which may result in an error in the detection signal of the magnetic sensor device.

[0007] Consider a case where the planar shape of the substrate is a simple shape, such as a rectangle. When stress occurs in the substrate due to external force or temperature, the stress distribution in the substrate becomes symmetrical around the center of gravity of the planar shape of the substrate. Therefore, in order to suppress the effects of stress, it is conceivable to mount the magnetic sensor on the substrate so that the center of gravity of the planar shape of the magnetic sensor overlaps the center of gravity of the planar shape of the substrate. However, with a three-axis magnetic sensor such as that disclosed in Patent Document 1, it is not possible to mount all sensors in this manner. Furthermore, actual substrates contain components other than the magnetic sensor, such as terminals. Therefore, it may not be possible to mount the magnetic sensor in this manner.

[0008] The present invention has been made in view of the above problems, and an object of the present invention is to provide a magnetic sensor device that can suppress the influence of applied stress. [Means for solving the problem]

[0009] The magnetic sensor device of the present invention includes at least one magnetic sensor including a plurality of magnetoresistive elements and an element placement area for placing the plurality of magnetoresistive elements, the magnetic sensor being configured to detect a target magnetic field, which is a magnetic field to be detected, and a support body supporting the at least one magnetic sensor and having a reference plane. When viewed from a first reference direction, the center of gravity of the element placement area is offset from the center of gravity of the reference plane. The first reference direction is a direction perpendicular to the reference plane.

[0010] At least one magnetic sensor further includes a first resistor and a second resistor connected in series along a first path electrically connecting the first connection point and the second connection point, and a third resistor and a fourth resistor connected in series along a second path electrically connecting the first connection point and the second connection point. The first and fourth resistors are connected to the first connection point. The second and third resistors are connected to the second connection point. The plurality of magnetoresistive effect elements constitute the first to fourth resistors. Each of the plurality of magnetoresistive effect elements includes a magnetization fixed layer having a magnetization whose direction is fixed, a free layer having magnetization whose direction is changeable in response to a target magnetic field, and a gap layer disposed between the magnetization fixed layer and the free layer.

[0011] The magnetization of the magnetization pinned layer in each of the first and third resistor units includes a component in a first magnetization direction. The first magnetization direction is a direction intersecting the first reference direction. The magnetization of the magnetization pinned layer in each of the second and fourth resistor units includes a component in a second magnetization direction. The second magnetization direction is a direction intersecting the first reference direction and opposite to the first magnetization direction. The magnetization of the free layer in each of two resistor units among the first through fourth resistor units includes a component in a third magnetization direction when a target magnetic field is not applied to at least one magnetic sensor. The third magnetization direction is a direction intersecting the first reference direction and perpendicular to the first magnetization direction. The magnetization of the free layer in each of the other two resistor units among the first through fourth resistor units includes a component in a fourth magnetization direction when a target magnetic field is not applied to at least one magnetic sensor. The fourth magnetization direction is a direction that intersects the first reference direction and is opposite to the third magnetization direction.

[0012] In the magnetic sensor device of the present invention, the magnetization of the free layer in each of the first and second resistor units may include a component in a third magnetization direction when a target magnetic field is not applied to at least one magnetic sensor. The magnetization of the free layer in each of the third and fourth resistor units may include a component in a fourth magnetization direction when a target magnetic field is not applied to at least one magnetic sensor. Alternatively, the magnetization of the free layer in each of the first and fourth resistor units may include a component in the third magnetization direction when a target magnetic field is not applied to at least one magnetic sensor. The magnetization of the free layer in each of the second and third resistor units may include a component in a fourth magnetization direction when a target magnetic field is not applied to at least one magnetic sensor.

[0013] In the magnetic sensor device of the present invention, the deviation of the center of gravity of the element arrangement region from the center of gravity of the reference plane in the second reference direction may be larger than the deviation of the center of gravity of the element arrangement region from the center of gravity of the reference plane in the third reference direction. The second reference direction and the third reference direction may be two directions perpendicular to the first reference direction. In this case, the angle that the first magnetization direction forms with the second reference direction may be greater than 0° and less than 90°.

[0014] In the magnetic sensor device of the present invention, at least one magnetic sensor may further include a magnetic field generator. The magnetic field generator may be configured to apply a magnetic field to the free layer in a direction intersecting each of the first to fourth magnetization directions. Alternatively, the magnetic field generator may be configured to apply a magnetic field of the third magnetization direction or a magnetic field of the fourth magnetization direction to the free layer.

[0015] In the magnetic sensor device of the present invention, the deviation of the center of gravity of the element arrangement region from the center of gravity of the reference plane in the second reference direction may be larger than the deviation of the center of gravity of the element arrangement region from the center of gravity of the reference plane in the third reference direction. The second reference direction and the third reference direction may be two directions orthogonal to the first reference direction. The element arrangement region may include a first region for arranging at least one magnetoresistive effect element constituting a first resistance portion among the plurality of magnetoresistive effect elements, a second region for arranging at least one magnetoresistive effect element constituting a second resistance portion among the plurality of magnetoresistive effect elements, a third region for arranging at least one magnetoresistive effect element constituting a third resistance portion among the plurality of magnetoresistive effect elements, and a fourth region for arranging at least one magnetoresistive effect element constituting a fourth resistance portion among the plurality of magnetoresistive effect elements. At least two of the first to fourth regions may be arranged along the third reference direction so that at least a portion of each of the at least two regions sandwiches the reference axis when viewed from the first reference direction. The reference axis may be a straight line that passes through the center of gravity of the reference plane and is parallel to the second reference direction.

[0016] When the deviation of the center of gravity of the element arrangement region from the center of gravity of the reference plane in the second reference direction is larger than the deviation of the center of gravity of the element arrangement region from the center of gravity of the reference plane in the third reference direction, the second and fourth regions may be arranged along the third reference direction so as to sandwich the reference axis when viewed from the first reference direction. The first region may be arranged between the second and fourth regions when viewed from the first reference direction. The third region may be arranged between the first and second regions when viewed from the first reference direction. Alternatively, in this case, the second and third regions may be arranged along the third reference direction so as to sandwich the reference axis when viewed from the first reference direction. The first region may be arranged between the second and third regions when viewed from the first reference direction. The fourth region may be arranged between the first and third regions when viewed from the first reference direction.

[0017] Alternatively, in this case, the first and fourth regions may be arranged along a third reference direction so that at least a portion of each of the first and fourth regions sandwiches the reference axis when viewed from the first reference direction. The second and third regions may be arranged along a third reference direction so that at least a portion of each of the second and third regions sandwiches the reference axis when viewed from the first reference direction. The second and third regions may each be arranged in a direction parallel to the second reference direction relative to the first and fourth regions. In this case, the first and second regions may be arranged symmetrically with respect to a virtual line perpendicular to the reference axis when viewed from the first reference direction. The third and fourth regions may be arranged symmetrically with respect to the virtual line when viewed from the first reference direction.

[0018] Furthermore, if the deviation of the center of gravity of the element placement region from the center of gravity of the reference plane in the second reference direction is greater than the deviation of the center of gravity of the element placement region from the center of gravity of the reference plane in the third reference direction, the at least two regions may be arranged symmetrically around the reference axis when viewed from the first reference direction.

[0019] In this case, the center of gravity of the element arrangement region may overlap the reference axis when viewed from the first reference direction.

[0020] In the magnetic sensor device of the present invention, the at least one magnetic sensor may include one magnetic sensor. The one magnetic sensor may be configured to detect a unidirectional component of a target magnetic field and generate at least one detection signal corresponding to the unidirectional component. In this case, the magnetic sensor device of the present invention may further include a chip including the one magnetic sensor. The chip may be mounted on a reference plane.

[0021] In the magnetic sensor device of the present invention, the at least one magnetic sensor may include two magnetic sensors. The two magnetic sensors may be configured to detect components of the target magnetic field in two different directions, respectively. In this case, the magnetic sensor device of the present invention may further include a chip including the two magnetic sensors. The chip may be mounted on a reference plane. In this case, the two directions of the target magnetic field may be inclined with respect to the reference plane and the first reference direction, respectively.

[0022] In the magnetic sensor device of the present invention, the at least one magnetic sensor may include a first magnetic sensor, a second magnetic sensor, and a third magnetic sensor. The first magnetic sensor may be configured to detect a component of a target magnetic field in a first direction. The second magnetic sensor may be configured to detect a component of the target magnetic field in a second direction. The third magnetic sensor may be configured to detect a component of the target magnetic field in a third direction. The magnetic sensor device may further include a first chip including the first magnetic sensor and a second chip including the second and third magnetic sensors. The first and second chips may be mounted on a reference plane and arranged along a second reference direction orthogonal to the first reference direction. In this case, the first direction may be a direction parallel to the reference plane. The second direction may be a direction tilted with respect to both the reference plane and the first reference direction. The third direction may be another direction tilted with respect to both the reference plane and the first reference direction. [Effects of the Invention]

[0023] In the magnetic sensor device and magnetic sensor system of the present invention, the magnetization direction of the fixed layer and the magnetization direction of the free layer of each of the multiple magnetoresistive elements are specified on the assumption that the center of gravity of the element arrangement area is offset from the center of gravity of the reference plane, thereby achieving an effect of realizing a magnetic sensor device that can suppress the effects of applied stress. [Brief explanation of the drawings]

[0024] [Figure 1] 1 is a perspective view showing a schematic configuration of a joint mechanism including a magnetic sensor system according to a first embodiment of the present invention. [Figure 2] FIG. 2 is a cross-sectional view showing a schematic configuration of the joint mechanism shown in FIG. [Figure 3] FIG. 2 is an explanatory diagram for explaining a reference coordinate system in the magnetic sensor system according to the first embodiment of the present invention. [Figure 4] 1 is a perspective view showing a magnetic sensor device according to a first embodiment of the present invention. [Figure 5] FIG. 1 is a plan view showing a magnetic sensor device according to a first embodiment of the present invention. [Figure 6] FIG. 1 is a side view showing a magnetic sensor device according to a first embodiment of the present invention. [Figure 7] FIG. 1 is a functional block diagram showing a configuration of a magnetic sensor device according to a first embodiment of the present invention. [Figure 8] FIG. 2 is a circuit diagram showing a circuit configuration of a first magnetic sensor according to the first embodiment of the present invention. [Figure 9] FIG. 4 is a circuit diagram showing a circuit configuration of a second magnetic sensor in the first embodiment of the present invention. [Figure 10] FIG. 4 is a circuit diagram showing a circuit configuration of a third magnetic sensor according to the first embodiment of the present invention. [Figure 11] FIG. 2 is a plan view showing a part of the first chip in the first embodiment of the present invention. [Figure 12] FIG. 2 is a cross-sectional view showing a part of a first chip in the first embodiment of the present invention. [Figure 13] FIG. 3 is a plan view showing a part of a second chip in the first embodiment of the present invention. [Figure 14] FIG. 3 is a cross-sectional view showing a part of a second chip in the first embodiment of the present invention. [Figure 15] 1 is a perspective view showing a magnetoresistive effect element according to a first embodiment of the present invention. [Figure 16] FIG. 2 is an explanatory diagram for explaining the arrangement of element arrangement regions in the first embodiment of the present invention. [Figure 17] FIG. 3 is an explanatory diagram schematically showing stress distribution within a support body in the first embodiment of the present invention. [Figure 18] FIG. 10 is a perspective view showing a magnetoresistive effect element according to a modified example of the first embodiment of the present invention. [Figure 19] FIG. 10 is a circuit diagram showing a circuit configuration of a first magnetic sensor according to a second embodiment of the present invention. [Figure 20] FIG. 10 is a circuit diagram showing a circuit configuration of a second magnetic sensor according to a second embodiment of the present invention. [Figure 21] FIG. 10 is a circuit diagram showing a circuit configuration of a third magnetic sensor according to the second embodiment of the present invention. [Figure 22] FIG. 11 is an explanatory diagram for explaining the arrangement of element arrangement regions in the third embodiment of the present invention. [Figure 23] FIG. 10 is an explanatory diagram for explaining the arrangement of element arrangement regions in a fourth embodiment of the present invention. [Figure 24] FIG. 13 is an explanatory diagram for explaining the arrangement of element arrangement regions in the fifth embodiment of the present invention. DETAILED DESCRIPTION OF THE INVENTION

[0025] [First embodiment] Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. First, a joint mechanism 300 to which a magnetic sensor system 100 according to a first embodiment of the present invention is applied will be described. The joint mechanism 300 is a mechanism including a joint. FIG. 1 is a perspective view showing a schematic configuration of the joint mechanism 300. FIG. 2 is a cross-sectional view showing a schematic configuration of the joint mechanism 300. FIG. 3 is an explanatory diagram for explaining a reference coordinate system in the magnetic sensor system 100.

[0026] As shown in FIGS. 1 and 2, the joint mechanism 300 includes a first member 310, a second member 320, and the magnetic sensor system 100.

[0027] The first member 310 includes a shaft portion 311 and a spherical portion 312 connected to one longitudinal end of the shaft portion 311. The spherical portion 312 has a convex surface 312a. Here, a first spherical surface is assumed to be a virtual spherical surface that includes the convex surface 312a. It can also be said that the convex surface 312a is made up of a part of the first spherical surface. The part of the first spherical surface that is not included in the convex surface 312a is the boundary between the shaft portion 311 and the spherical portion 312.

[0028] The second member 320 includes a shaft portion 321 and a receiving portion 322 connected to one longitudinal end of the shaft portion 321. The receiving portion 322 has a concave surface 322a. Here, a second spherical surface is assumed to be an imaginary spherical surface that includes the concave surface 322a. It can also be said that the concave surface 322a is formed by a portion of the second spherical surface. The concave surface 322a may be formed by half or a portion close to half of the second spherical surface.

[0029] The first member 310 and the second member 320 are connected such that their relative positions can be changed, with the spherical portion 312 fitted into the receiving portion 322. The radius of the second spherical surface is equal to or slightly larger than the radius of the first spherical surface. The convex surface 312a and the concave surface 322a may be in contact with each other or may face each other via a lubricant. The center of the second spherical surface coincides with or nearly coincides with the center of the first spherical surface. The connecting portion between the first member 310 and the second member 320 is a joint. In this embodiment, this joint is a ball-and-socket joint.

[0030] The magnetic sensor system 100 includes a magnetic sensor device 1 and a magnetic field generator 101. The position of the magnetic field generator 101 relative to the magnetic sensor device 1 can change along a predetermined spherical surface. The magnetic sensor system 100 is a system for detecting the position of the magnetic field generator 101 relative to the magnetic sensor device 1.

[0031] The magnetic field generator 101 generates a predetermined magnetic field. The magnetic field generator 101 is, for example, a magnet. The magnetic sensor device 1 generates a first detection value, a second detection value, and a third detection value that correspond to three different directional components of the magnetic field at a reference position. The reference position will be described in detail later.

[0032] 1 and 2, the magnetic field generator 101 is embedded in the receiving portion 322 so as not to protrude from the concave surface 322a. The magnetic sensor device 1 is disposed inside the spherical portion 312. Hereinafter, the position of the center of the first spherical surface will be referred to as the reference position. The magnetic sensor device 1 is configured to detect a magnetic field at the reference position.

[0033] Hereinafter, the magnetic field generated by the magnetic field generator 101 at the reference position will be referred to as the target magnetic field. The direction of the target magnetic field is, for example, parallel to an imaginary line passing through the reference position and the magnetic field generator 101. In the example shown in FIG. 2, the magnetic field generator 101 is a magnet with a north pole and a south pole aligned along the imaginary line. The south pole is closer to the reference position than the north pole. The multiple dashed lines with arrows shown in FIG. 2 represent magnetic field lines corresponding to the magnetic field generated by the magnetic field generator 101.

[0034] In the joint mechanism 300 shown in FIGS. 1 and 2, the relative position of the second member 320 with respect to the first member 310 can be changed with the spherical portion 312 fitted into the receiving portion 322. This allows the position of the magnetic field generator 101 relative to the magnetic sensor device 1 to change along the aforementioned predetermined spherical surface. In this embodiment, the relative position of the magnetic field generator 101 with respect to the magnetic sensor device 1 is defined as the position of the point on the magnetic field generator 101 that is closest to the reference position. The center of the predetermined spherical surface coincides with or nearly coincides with the center of the first spherical surface. The radius of the predetermined spherical surface is equal to or greater than the radius of the first spherical surface. The radius of the predetermined spherical surface may coincide with the radius of the first spherical surface or the radius of the second spherical surface.

[0035] Here, the reference coordinate system in this embodiment will be described with reference to Fig. 3. The reference coordinate system is a coordinate system based on the magnetic sensor device 1, and is an orthogonal coordinate system defined by three axes. In the reference coordinate system, an X direction, a Y direction, and a Z direction are defined. As shown in Fig. 3, the X direction, the Y direction, and the Z direction are orthogonal to one another. Furthermore, the direction opposite to the X direction is defined as the -X direction, the direction opposite to the Y direction is defined as the -Y direction, and the direction opposite to the Z direction is defined as the -Z direction.

[0036] As described above, the magnetic sensor device 1 generates a first detection value, a second detection value, and a third detection value that correspond to components of the magnetic field at the reference position in three different directions. In this embodiment, the three different directions are the direction parallel to the X direction, the direction parallel to the Y direction, and the direction parallel to the Z direction. The three axes that define the reference coordinate system are the axis parallel to the X direction, the axis parallel to the Y direction, and the axis parallel to the Z direction.

[0037] The position of the magnetic sensor device 1 in the reference coordinate system does not change. When the relative position of the magnetic field generator 101 with respect to the magnetic sensor device 1 changes, the position of the magnetic field generator 101 in the reference coordinate system changes along the predetermined spherical surface mentioned above. In FIG. 3, reference numeral 102 indicates the predetermined spherical surface. The position of the magnetic field generator 101 in the reference coordinate system represents the relative position of the magnetic field generator 101 with respect to the magnetic sensor device 1. Hereinafter, the position of the magnetic field generator 101 in the reference coordinate system will be simply referred to as the position of the magnetic field generator 101.

[0038] In the joint mechanism 300 including the magnetic sensor system 100, the magnetic sensor system 100 detects the relative position of the magnetic field generator 101 with respect to the magnetic sensor device 1, thereby making it possible to detect the relative position of the second member 320 with respect to the first member 310. The joint mechanism 300 can be used in robots, industrial equipment, medical equipment, amusement equipment, etc.

[0039] The magnetic sensor system 100 can be applied to a joystick or a trackball in addition to the joint mechanism 300.

[0040] A joystick includes, for example, a lever and a support part that supports the lever so that it can swing. When the magnetic sensor system 100 is applied to a joystick, for example, the magnetic field generator 101 is provided inside the support part, and the magnetic sensor device 1 is provided inside the lever so that the relative position of the magnetic field generator 101 with respect to the magnetic sensor device 1 changes along a predetermined spherical surface as the lever swings.

[0041] A trackball includes, for example, a ball and a support that rotatably supports the ball. When the magnetic sensor system 100 is applied to a trackball, for example, the magnetic field generator 101 is provided inside the support, and the magnetic sensor device 1 is provided inside the ball so that the relative position of the magnetic field generator 101 with respect to the magnetic sensor device 1 changes along a predetermined spherical surface as the ball rotates.

[0042] Next, the configuration of the magnetic sensor device 1 will be described with reference to Fig. 4 to Fig. 7. Fig. 4 is a perspective view showing the magnetic sensor device 1. Fig. 5 is a plan view showing the magnetic sensor device 1. Fig. 6 is a side view showing the magnetic sensor device 1. Fig. 7 is a functional block diagram showing the configuration of the magnetic sensor device 1.

[0043] The magnetic sensor device 1 includes at least one magnetic sensor and a support that supports the at least one magnetic sensor. The at least one magnetic sensor includes a plurality of magnetoresistive effect elements and is configured to detect a target magnetic field that is a magnetic field to be detected. Hereinafter, the magnetoresistive effect elements will be referred to as MR elements.

[0044] In this embodiment, the at least one magnetic sensor includes a first magnetic sensor 10, a second magnetic sensor 20, and a third magnetic sensor 30. Each of the first to third magnetic sensors 10, 20, and 30 includes a plurality of MR elements. The magnetic sensor device 1 includes a first chip 2 including the first magnetic sensor 10, and a second chip 3 including the second magnetic sensor 20 and the third magnetic sensor 30. The first and second chips 2 and 3 each have a rectangular parallelepiped shape.

[0045] The support body 4 has a rectangular parallelepiped shape and has a reference plane 4a which is an upper surface, a lower surface 4b located on the opposite side to the reference plane 4a, and four side surfaces connecting the reference plane 4a and the lower surface 4b.

[0046] Here, the relationship between the reference coordinate system and the components of the magnetic sensor device 1 will be described with reference to FIGS. 4 to 6. As described above, the reference coordinate system defines the X, Y, Z, -X, -Y, and -Z directions. The X and Y directions are parallel to the reference plane 4a of the support 4. The Z direction is perpendicular to the reference plane 4a of the support 4 and is the direction from the lower surface 4b of the support 4 toward the reference plane 4a. Hereinafter, a position at the end of the Z direction relative to the reference position will be referred to as "above," and a position on the opposite side of "above" relative to the reference position will be referred to as "below." Furthermore, with regard to the components of the magnetic sensor device 1, the surface located at the end in the Z direction will be referred to as the "upper surface," and the surface located at the end in the -Z direction will be referred to as the "lower surface."

[0047] Furthermore, the direction perpendicular to the reference plane 4a (the direction parallel to the Z direction) is referred to as the first reference direction. Furthermore, the two directions perpendicular to the first reference direction are referred to as the second reference direction and the third reference direction. In this embodiment, the direction parallel to the Y direction is referred to as the second reference direction. Furthermore, the direction parallel to the X direction is referred to as the third reference direction. Hereinafter, the first reference direction will be denoted by the symbol Rz, the second reference direction will be denoted by the symbol Ry, and the third reference direction will be denoted by the symbol Rx.

[0048] The first chip 2 has an upper surface 2a and a lower surface 2b located on opposite sides and four side surfaces connecting the upper surface 2a and the lower surface 2b. The second chip 3 has an upper surface 3a and a lower surface 3b located on opposite sides and four side surfaces connecting the upper surface 3a and the lower surface 3b.

[0049] The first chip 2 is mounted on the reference plane 4a with its lower surface 2b facing the reference plane 4a of the support 4. The second chip 3 is mounted on the reference plane 4a with its lower surface 3b facing the reference plane 4a of the support 4. The first chip 2 and the second chip 3 are bonded to the support 4 by, for example, adhesives 6 and 7, respectively.

[0050] The first chip 2 has a plurality of first pads (electrode pads) 21 provided on its upper surface 2a. The second chip 3 has a plurality of second pads (electrode pads) 31 provided on its upper surface 3a. The support 4 has a plurality of third pads (electrode pads) 41 provided on its reference plane 4a. Although not shown, in the magnetic sensor device 1, two corresponding pads among the plurality of first pads 21, the plurality of second pads 31, and the plurality of third pads 41 are connected to each other by bonding wires.

[0051] The support 4 includes a processor 40 for processing a plurality of detection signals generated by the first to third magnetic sensors 10, 20, and 30. The processor 40 is configured, for example, by an application specific integrated circuit (ASIC). The first to third magnetic sensors 10, 20, and 30 and the processor 40 are connected via pads 21, 31, and 41 and a plurality of bonding wires.

[0052] Here, the dimension perpendicular to the reference plane 4a is referred to as the thickness. As shown in Figure 6, the thickness of the first chip 2 and the thickness of the second chip 3 are the same. Furthermore, the thickness of the support 4 is greater than the thickness of the first chip 2 and the thickness of the second chip 3.

[0053] Next, the configurations of the first to third magnetic sensors 10, 20, and 30 will be described with reference to FIGS. 8 to 14. FIG. 8 is a circuit diagram showing the circuit configuration of the first magnetic sensor 10. FIG. 9 is a circuit diagram showing the circuit configuration of the second magnetic sensor 20. FIG. 10 is a circuit diagram showing the circuit configuration of the third magnetic sensor 30. FIG. 11 is a plan view showing a portion of the first chip 2. FIG. 12 is a cross-sectional view showing a portion of the first chip 2. FIG. 13 is a plan view showing a portion of the second chip 3. FIG. 14 is a cross-sectional view showing a portion of the second chip 3.

[0054] Here, the first direction, second direction, and third direction are defined as follows: The first direction is a direction parallel to the reference plane 4a. The second direction is a direction tilted with respect to both the reference plane 4a and the first reference direction Rz. The third direction is another direction tilted with respect to both the reference plane 4a and the first reference direction Rz. The second direction is perpendicular to the first direction. The third direction is also perpendicular to the first direction.

[0055] As shown in FIGS. 11 and 13, the U direction and V direction are defined as follows: The U direction is the direction rotated from the X direction toward the -Y direction. The V direction is the direction rotated from the Y direction toward the X direction. In this embodiment, the U direction is defined as the direction rotated by α from the X direction toward the -Y direction, and the V direction is defined as the direction rotated by α from the Y direction toward the X direction. Note that α is an angle greater than 0° and smaller than 90°. The direction opposite the U direction is defined as the -U direction, and the direction opposite the V direction is defined as the -V direction.

[0056] As shown in FIG. 14, the W1 direction and the W2 direction are defined as follows: The W1 direction is the direction rotated from the V direction toward the -Z direction; the W2 direction is the direction rotated from the V direction toward the Z direction; in this embodiment, the W1 direction is defined as the direction rotated by β from the V direction toward the -Z direction, and the W2 direction is defined as the direction rotated by β from the V direction toward the Z direction. Note that β is an angle greater than 0° and smaller than 90°. The direction opposite the W1 direction is defined as the -W1 direction, and the direction opposite the W2 direction is defined as the -W2 direction. The W1 direction and the W2 direction are each perpendicular to the U direction.

[0057] In this embodiment, the first direction is a direction parallel to the U direction, the second direction is a direction parallel to the W1 direction, and the third direction is a direction parallel to the W2 direction.

[0058] The first magnetic sensor 10 is configured to detect a first component of the target magnetic field and generate at least one first detection signal corresponding to the first component, which is a component of the target magnetic field in a first direction (parallel to the U direction).

[0059] The second magnetic sensor 20 is configured to detect a second component of the target magnetic field and generate at least one second detection signal corresponding to the second component, which is a component of the target magnetic field in a second direction (parallel to the W1 direction).

[0060] The third magnetic sensor 30 is configured to detect a third component of the target magnetic field and generate at least one third detection signal corresponding to the third component, which is a component of the target magnetic field in a third direction (parallel to the W2 direction).

[0061] As shown in FIG. 8, the first magnetic sensor 10 includes a power supply terminal V1, a ground terminal G1, signal output terminals E11 and E12, a first resistor R11, a second resistor R12, a third resistor R13, and a fourth resistor R14. The MR elements of the first magnetic sensor 10 constitute the first to fourth resistors R11, R12, R13, and R14. The first and second resistors R11 and R12 are connected in series along a first path (the path on the left in FIG. 8) that electrically connects the first connection point P11 and the second connection point P12. The third and fourth resistors R13 and R14 are connected in series along a second path (the path on the right in FIG. 8) that electrically connects the first connection point P11 and the second connection point P12.

[0062] The first and fourth resistor elements R11 and R14 are connected to a first connection point P11. The second and third resistor elements R12 and R13 are connected to a second connection point P12. The first connection point P11 is connected to a power supply terminal V1. The second connection point P12 is connected to a ground terminal G1. The connection point between the first resistor element R11 and the second resistor element R12 is connected to a signal output terminal E11. The connection point between the third resistor element R13 and the fourth resistor element R14 is connected to a signal output terminal E12.

[0063] 9, the second magnetic sensor 20 includes a power supply terminal V2, a ground terminal G2, signal output terminals E21 and E22, a first resistor unit R21, a second resistor unit R22, a third resistor unit R23, and a fourth resistor unit R24. The multiple MR elements of the second magnetic sensor 20 constitute the first to fourth resistor units R21, R22, R23, and R24.

[0064] The circuit configuration of the second magnetic sensor 20 is basically the same as that of the first magnetic sensor 10. If the power supply terminal V1, the ground terminal G1, the signal output terminals E11 and E12, the resistance units R11, R12, R13, and R14, and the connection points P11 and P12 in the description of the circuit configuration of the first magnetic sensor 10 are replaced with the power supply terminal V2, the ground terminal G2, the signal output terminals E21 and E22, the resistance units R21, R22, R23, and R24, and the connection points P21 and P22, respectively, the circuit configuration of the second magnetic sensor 20 can be described.

[0065] 10, the third magnetic sensor 30 includes a power supply terminal V3, a ground terminal G3, signal output terminals E31 and E32, a first resistor unit R31, a second resistor unit R32, a third resistor unit R33, and a fourth resistor unit R34. The multiple MR elements of the third magnetic sensor 30 constitute the first to fourth resistor units R31, R32, R33, and R34.

[0066] The circuit configuration of the third magnetic sensor 30 is basically the same as that of the first magnetic sensor 10. If the power supply terminal V1, the ground terminal G1, the signal output terminals E11 and E12, the resistors R11, R12, R13, and R14, and the connection points P11 and P12 in the description of the circuit configuration of the first magnetic sensor 10 are replaced with the power supply terminal V3, the ground terminal G3, the signal output terminals E31 and E32, the resistors R31, R32, R33, and R34, and the connection points P31 and P32, respectively, the circuit configuration of the third magnetic sensor 30 can be explained.

[0067] Hereinafter, the multiple MR elements of the first magnetic sensor 10 will be referred to as multiple first MR elements 50A, the multiple MR elements of the second magnetic sensor 20 will be referred to as multiple second MR elements 50B, and the multiple MR elements of the third magnetic sensor 30 will be referred to as multiple third MR elements 50C. Any MR element will be represented by the symbol 50.

[0068] FIG. 15 is a perspective view showing an MR element 50. The MR element 50 is a spin-valve type MR element. The MR element 50 includes a magnetization pinned layer 52 having a fixed magnetization direction, a free layer 54 having a magnetization direction that can change depending on the direction of an external magnetic field, and a gap layer 53 disposed between the magnetization pinned layer 52 and the free layer 54. The MR element 50 may be a TMR (tunneling magnetoresistance) element or a GMR (giant magnetoresistance) element. In a TMR element, the gap layer 53 is a tunnel barrier layer. In a GMR element, the gap layer 53 is a nonmagnetic conductive layer. In the MR element 50, the resistance value changes depending on the angle between the magnetization direction of the free layer 54 and the magnetization direction of the magnetization pinned layer 52. When this angle is 0°, the resistance value is minimum, and when the angle is 180°, the resistance value is maximum. In each MR element 50, the free layer 54 has shape anisotropy in which the direction of the easy axis of magnetization is perpendicular to the direction of magnetization of the magnetization fixed layer 52. Note that a magnet that applies a bias magnetic field to the free layer 54 can also be used as a means for setting the easy axis of magnetization in a predetermined direction in the free layer 54.

[0069] The MR element 50 further includes an antiferromagnetic layer 51. The antiferromagnetic layer 51, the magnetization pinned layer 52, the gap layer 53, and the free layer 54 are stacked in this order. The antiferromagnetic layer 51 is made of an antiferromagnetic material and generates exchange coupling with the magnetization pinned layer 52 to pin the magnetization direction of the magnetization pinned layer 52. The magnetization pinned layer 52 may be a so-called self-pinned type pinned layer (synthetic ferri-pinned layer, SFP layer). The self-pinned type pinned layer has a synthetic ferri-structure in which a ferromagnetic layer, a non-magnetic intermediate layer, and a ferromagnetic layer are stacked, and the two ferromagnetic layers are antiferromagnetically coupled. When the magnetization pinned layer 52 is a self-pinned type pinned layer, the antiferromagnetic layer 51 may be omitted.

[0070] The layers 51 to 54 in the MR element 50 may be arranged upside down relative to the arrangement shown in FIG.

[0071] 8 to 10, the solid arrows represent the magnetization direction of the magnetization fixed layer 52 of the MR element 50. The open arrows represent the magnetization direction of the free layer 54 of the MR element 50 when no target magnetic field is applied to the MR element 50.

[0072] Here, the first, second, third, and fourth magnetization directions are defined as follows: The first magnetization direction is a direction that intersects with the first reference direction Rz. The second magnetization direction is a direction that intersects with the first reference direction Rz and is opposite to the first magnetization direction. The third magnetization direction is a direction that intersects with the first reference direction Rz and is perpendicular to the first magnetization direction. The fourth magnetization direction is a direction that intersects with the first reference direction Rz and is opposite to the third magnetization direction.

[0073] In this embodiment, the first magnetization direction intersects with the second reference direction Ry, and the angle that the first magnetization direction makes with the second reference direction Ry may be in the range of greater than 0° and less than 90°.

[0074] In the first magnetic sensor 10, the first magnetization direction is the U direction, the second magnetization direction is the −U direction, the third magnetization direction is the V direction, and the fourth magnetization direction is the −V direction. In the example shown in Fig. 8, the magnetization of the magnetization fixed layer 52 in each of the first and third resistance units R11 and R13 includes a component in the first magnetization direction (U direction). The magnetization of the magnetization fixed layer 52 in each of the second and fourth resistance units R12 and R14 includes a component in the second magnetization direction (−U direction).

[0075] The magnetization of the free layer 54 in each of two of the first through fourth resistor units R11, R12, R13, and R14 includes a component in the third magnetization direction (V direction) when a target magnetic field is not applied to the first magnetic sensor 10. The magnetization of the free layer 54 in each of the other two of the first through fourth resistor units R11, R12, R13, and R14 includes a component in the fourth magnetization direction (-V direction) when a target magnetic field is not applied to the first magnetic sensor 10. In the example shown in FIG. 8 , the magnetization of the free layer 54 in each of the first and second resistor units R11 and R12 includes a component in the third magnetization direction (V direction). The magnetization of the magnetization fixed layer 52 in each of the third and fourth resistor units R13 and R14 includes a component in the fourth magnetization direction (-V direction).

[0076] When the magnetization of the magnetization fixed layer 52 includes a component in a specific magnetization direction, the component in the specific magnetization direction may be the main component of the magnetization of the magnetization fixed layer 52. Alternatively, the magnetization of the magnetization fixed layer 52 may not include a component in a direction perpendicular to the specific magnetization direction. In this embodiment, when the magnetization of the magnetization fixed layer 52 includes a component in a specific magnetization direction, the direction of the magnetization of the magnetization fixed layer 52 becomes the specific magnetization direction or approximately the specific magnetization direction.

[0077] Similarly, if the magnetization of the free layer 54 includes a component in a specific magnetization direction when no target magnetic field is applied to the free layer 54, the component in the specific magnetization direction may be the main component of the magnetization of the free layer 54. Alternatively, the magnetization of the free layer 54 in the above case may not include a component in a direction perpendicular to the specific magnetization direction. In this embodiment, if the magnetization of the free layer 54 in the above case includes a component in a specific magnetization direction, the direction of the magnetization of the free layer 54 in the above case will be the specific magnetization direction or approximately the specific magnetization direction.

[0078] The first magnetic sensor 10 is configured so that the magnetization of the free layer 54 is in the above-mentioned direction when no target magnetic field is applied to the first magnetic sensor 10. Specifically, the free layer 54 of each of the multiple first MR elements 50A of the first magnetic sensor 10 has shape anisotropy such that the magnetization easy axis direction is parallel to the third magnetization direction (V direction). Note that the direction parallel to the third magnetization direction (V direction) is also parallel to the fourth magnetization direction (-V direction).

[0079] The first magnetic sensor 10 also includes a magnetic field generator configured to apply a magnetic field to the free layer 54 in a direction that intersects each of the first through fourth magnetization directions. In this embodiment, the magnetic field generator includes a coil. The specific direction of the magnetic field generated by the coil will be described later.

[0080] In the second magnetic sensor 20, the first magnetization direction is the W1 direction, the second magnetization direction is the −W1 direction, the third magnetization direction is the U direction, and the fourth magnetization direction is the −U direction. If the first magnetic sensor 10, resistors R11, R12, R13, R14, U direction, −U direction, V direction, and −V direction in the explanation of the magnetization direction of the magnetization fixed layer 52 and the magnetization direction of the free layer 54 in the first magnetic sensor 10 are replaced with the second magnetic sensor 20, resistors R21, R22, R23, R24, W1 direction, −W1 direction, U direction, and −U direction, respectively, the explanation of the magnetization direction of the magnetization fixed layer 52 and the magnetization direction of the free layer 54 in the second magnetic sensor 20 will be true.

[0081] In the third magnetic sensor 30, the first magnetization direction is the W2 direction, the second magnetization direction is the −W2 direction, the third magnetization direction is the U direction, and the fourth magnetization direction is the −U direction. If the first magnetic sensor 10, resistors R11, R12, R13, R14, U direction, −U direction, V direction, and −V direction in the explanation of the magnetization direction of the magnetization fixed layer 52 and the magnetization direction of the free layer 54 in the first magnetic sensor 10 are replaced with the third magnetic sensor 30, resistors R31, R32, R33, R34, W2 direction, −W2 direction, U direction, and −U direction, respectively, the explanation of the magnetization direction of the magnetization fixed layer 52 and the magnetization direction of the free layer 54 in the third magnetic sensor 30 will be true.

[0082] As shown in FIGS. 11 and 12, the first chip 2 includes a substrate 22, insulating layers 23, 24, 25, 26, 27, 28, and 65A, a plurality of lower electrodes 61A, a plurality of upper electrodes 62A, a plurality of lower coil elements 63A, and a plurality of upper coil elements 64A. A coil element is a portion of a winding of a coil. The insulating layer 23 is disposed on the substrate 22. The plurality of lower coil elements 63A are disposed on the insulating layer 23. The insulating layer 65A is disposed on the insulating layer 23 around the plurality of lower coil elements 63A. The insulating layer 24 is disposed on the plurality of lower coil elements 63A and the insulating layer 65A. The plurality of lower electrodes 61A are disposed on the insulating layer 24. The insulating layer 25 is disposed on the insulating layer 24 around the plurality of lower electrodes 61A.

[0083] The plurality of first MR elements 50A are disposed on the plurality of lower electrodes 61A. The insulating layer 26 is disposed on the plurality of lower electrodes 61A and the insulating layer 25 and around the plurality of first MR elements 50A. The plurality of upper electrodes 62A are disposed on the plurality of first MR elements 50A and the insulating layer 26. The insulating layer 27 is disposed on the insulating layer 26 and around the plurality of upper electrodes 62A. The insulating layer 28 is disposed on the plurality of upper electrodes 62A and the insulating layer 27. The plurality of upper coil elements 64A are disposed on the insulating layer 28. The first chip 2 may further include an insulating layer (not shown) that covers the plurality of upper coil elements 64A and the insulating layer 28. Note that the plurality of lower electrodes 61A, the plurality of upper electrodes 62A, the plurality of lower coil elements 63A, and the insulating layers 23 to 28, 65A are omitted in FIG. 11 .

[0084] In a state where the first chip 2 is mounted on the reference plane 4a of the support 4 (see FIGS. 4 to 6), the upper surface of the substrate 22 is parallel to the reference plane 4a. In this state, the upper surface of each of the plurality of lower electrodes 61A is also parallel to the reference plane 4a. Therefore, in this state, it can be said that the plurality of first MR elements 50A are arranged on a plane parallel to the reference plane 4a.

[0085] As shown in FIG. 11 , the multiple first MR elements 50A are arranged so that multiple elements are aligned in each of the U and V directions. Each of the multiple upper coil elements 64A extends in a direction parallel to the Y direction. The multiple upper coil elements 64A are also arranged so that they are aligned in the X direction. When viewed from the first reference direction Rz, two upper coil elements 64A overlap each of the multiple first MR elements 50A. Although not shown, the shape and arrangement of the multiple lower coil elements 63A may be the same as or different from the shape and arrangement of the multiple upper coil elements 64A.

[0086] 11 and 12, the lower coil elements 63A and the upper coil elements 64A are electrically connected to form a coil that applies a magnetic field in the X direction and a magnetic field in the −X direction to the free layers 54 of the first MR elements 50A. This coil is configured to apply a magnetic field in the X direction to one of the free layers 54 in the first and second resistor sections R11 and R12 and the free layers 54 in the third and fourth resistor sections R13 and R14, and a magnetic field in the −X direction to the other free layer 54.

[0087] The direction of the magnetic field generated by this coil and applied to the free layer 54 intersects with each of the first to fourth magnetization directions (U direction, −U direction, V direction, and −V direction) of the first magnetic sensor 10. In particular, in the examples shown in Figures 11 and 12, the direction of the magnetic field applied to the free layer 54 is inclined at 45° with respect to each of the direction parallel to the first magnetization direction (U direction) and the direction parallel to the third magnetization direction (V direction).

[0088] Each of the lower electrodes 61A has an elongated shape. A gap is formed between two adjacent lower electrodes 61A in the longitudinal direction of the lower electrodes 61A. A first MR element 50A is disposed on the upper surface of each of the lower electrodes 61A near both ends in the longitudinal direction. Each of the upper electrodes 62A has an elongated shape and is disposed on two adjacent lower electrodes 61A in the longitudinal direction of the lower electrodes 61A to electrically connect the two adjacent first MR elements 50A.

[0089] As shown in FIGS. 13 and 14 , the second chip 3 includes a substrate 32, insulating layers 33, 34, 35, 36, 37, 38, 39, and 65B, a plurality of lower electrodes 61B, a plurality of lower electrodes 61C, a plurality of upper electrodes 62B, a plurality of upper electrodes 62C, a plurality of lower coil elements 63B, and a plurality of upper coil elements 64B. The insulating layer 33 is disposed on the substrate 32. The plurality of lower coil elements 63B are disposed on the insulating layer 33. The insulating layer 65B is disposed on the insulating layer 33 around the plurality of lower coil elements 63B. The insulating layer 34 is disposed on the plurality of lower coil elements 63B and the insulating layer 65B. The insulating layer 35 is disposed on the insulating layer 34. The plurality of lower electrodes 61B and the plurality of lower electrodes 61C are disposed on the insulating layer 35. The insulating layer 36 is disposed on the insulating layer 35 around the plurality of lower electrodes 61B and the plurality of lower electrodes 61C.

[0090] The plurality of second MR elements 50B are disposed on the plurality of lower electrodes 61B. The plurality of third MR elements 50C are disposed on the plurality of lower electrodes 61C. An insulating layer 37 is disposed on the plurality of lower electrodes 61B, the plurality of lower electrodes 61C, and the insulating layer 36, around the plurality of second MR elements 50B and the plurality of third MR elements 50C. The plurality of upper electrodes 62B are disposed on the plurality of second MR elements 50B and the insulating layer 37. The plurality of upper electrodes 62C are disposed on the plurality of third MR elements 50C and the insulating layer 37. The insulating layer 38 is disposed on the insulating layer 37, around the plurality of upper electrodes 62B and the plurality of upper electrodes 62C. The insulating layer 39 is disposed on the plurality of upper electrodes 62B, the plurality of upper electrodes 62C, and the insulating layer 38. The plurality of upper coil elements 64B are disposed on the insulating layer 39. The second chip 3 may further include an insulating layer (not shown) that covers the plurality of upper coil elements 64B and the insulating layer 39. Note that the plurality of lower electrodes 61B, the plurality of lower electrodes 61C, the plurality of upper electrodes 62B, the plurality of upper electrodes 62C, the plurality of lower coil elements 63B, and the insulating layers 33 to 39 are omitted in FIG.

[0091] When the second chip 3 is mounted on the reference plane 4a of the support 4 (see FIGS. 4 to 6), the upper surface of the substrate 32 is parallel to the reference plane 4a. The insulating layer 35 has a plurality of grooves 35c. Each of the grooves 35c has an inclined surface 35a and an inclined surface 35b inclined with respect to the upper surface of the substrate 32. The plurality of lower electrodes 61B are disposed on the inclined surface 35a of each of the plurality of grooves 35c. The plurality of lower electrodes 61C are disposed on the inclined surface 35b of each of the plurality of grooves 35c. In the above state, the upper surface of each of the plurality of lower electrodes 61B and the upper surface of each of the plurality of lower electrodes 61C are also inclined with respect to the reference plane 4a. Therefore, in the above state, it can be said that the plurality of second MR elements 50B and the plurality of third MR elements 50C are disposed on inclined surfaces inclined with respect to the reference plane 4a.

[0092] 13, the second MR elements 50B are arranged in a plurality of rows in the U direction and a plurality of rows in the V direction. Similarly, the third MR elements 50C are arranged in a plurality of rows in the U direction and a plurality of rows in the V direction. In this embodiment, the second MR elements 50B and the third MR elements 50C are arranged alternately in the V direction.

[0093] Each of the multiple upper coil elements 64B extends in a direction parallel to the Y direction. The multiple upper coil elements 64B are also arranged so as to line up in the X direction. When viewed from the first reference direction Rz, two upper coil elements 64B overlap each of the multiple second MR elements 50B and the multiple third MR elements 50C. Although not shown, the shape and arrangement of the multiple lower coil elements 63B may be the same as or different from the shape and arrangement of the multiple upper coil elements 64B.

[0094] 13 and 14 , the plurality of lower coil elements 63B and the plurality of upper coil elements 64B are electrically connected to form a coil that applies a magnetic field in the X direction and a magnetic field in the −X direction to the free layers 54 of each of the plurality of second MR elements 50B and the plurality of third MR elements 50C. This coil is configured to apply a magnetic field in the X direction to one of the free layers 54 in the first and second resistor portions R21, R22 of the second magnetic sensor 20 and the first and second resistor portions R31, R32 of the third magnetic sensor 30, and to apply a magnetic field in the −X direction to the other of the free layers 54 in the first and second resistor portions R21, R22 of the second magnetic sensor 20 and the first and second resistor portions R31, R32 of the third magnetic sensor 30, and the third and fourth resistor portions R23, R24 of the second magnetic sensor 20 and the third and fourth resistor portions R33, R34 of the third magnetic sensor 30.

[0095] The direction of the magnetic field generated by this coil and applied to the free layer 54 of the second magnetic sensor 20 intersects with each of the first to fourth magnetization directions (W1 direction, −W1 direction, U direction, and −U direction) of the second magnetic sensor 20. In the example shown in FIGS. 13 and 14 , in particular, the direction of the magnetic field applied to the free layer 54 of the second magnetic sensor 20 is inclined by 45° with respect to each of the direction parallel to the first magnetization direction (W1 direction) and the direction parallel to the third magnetization direction (U direction) of the second magnetic sensor 20.

[0096] Similarly, the direction of the magnetic field generated by this coil and applied to the free layer 54 of the third magnetic sensor 30 intersects each of the first to fourth magnetization directions (W2 direction, −W2 direction, U direction, and −U direction) of the third magnetic sensor 30. In particular, in the examples shown in Figures 13 and 14, the direction of the magnetic field applied to the free layer 54 of the third magnetic sensor 30 is inclined by 45° with respect to each of the direction parallel to the first magnetization direction (W2 direction) and the direction parallel to the third magnetization direction (U direction) of the third magnetic sensor 30.

[0097] Each of the lower electrodes 61B has an elongated shape. A gap is formed between two adjacent lower electrodes 61B in the longitudinal direction of the lower electrodes 61B. A second MR element 50B is disposed on the upper surface of each of the lower electrodes 61B near both ends in the longitudinal direction. Each of the upper electrodes 62B has an elongated shape and is disposed on two adjacent lower electrodes 61B in the longitudinal direction of the lower electrodes 61B to electrically connect the two adjacent second MR elements 50B.

[0098] Each of the lower electrodes 61C has an elongated shape. A gap is formed between two adjacent lower electrodes 61C in the longitudinal direction of the lower electrodes 61C. A third MR element 50C is disposed on the upper surface of each of the lower electrodes 61C near both ends in the longitudinal direction. Each of the upper electrodes 62C has an elongated shape and is disposed on two adjacent lower electrodes 61C in the longitudinal direction of the lower electrodes 61C to electrically connect the two adjacent third MR elements 50C.

[0099] Next, the first to third detection signals will be described with reference to Figures 8 to 10. When the component of the target magnetic field in the first direction (parallel to the U direction), i.e., the strength of the first component, changes, the resistance values of the resistors R11 to R14 of the first magnetic sensor 10 change such that the resistance values of the resistors R11 and R13 increase while the resistance values of the resistors R12 and R14 decrease, or the resistance values of the resistors R11 and R13 decrease while the resistance values of the resistors R12 and R14 increase. This causes a change in the potential of each of the signal output terminals E11 and E12. The first magnetic sensor 10 is configured to generate a signal corresponding to the potential of the signal output terminal E11 as the first detection signal S11 and generate a signal corresponding to the potential of the signal output terminal E12 as the first detection signal S12.

[0100] When the component of the target magnetic field in the second direction (parallel to the W1 direction), i.e., the strength of the second component, changes, the resistance values of the resistors R21 to R24 of the second magnetic sensor 20 change such that the resistance values of the resistors R21 and R23 increase while the resistance values of the resistors R22 and R24 decrease, or the resistance values of the resistors R21 and R23 decrease while the resistance values of the resistors R22 and R24 increase. This causes a change in the potential of each of the signal output terminals E21 and E22. The second magnetic sensor 20 is configured to generate a signal corresponding to the potential of the signal output terminal E21 as the second detection signal S21 and generate a signal corresponding to the potential of the signal output terminal E22 as the second detection signal S22.

[0101] When the component of the target magnetic field in the third direction (parallel to the W2 direction), i.e., the strength of the third component, changes, the resistance values of the resistors R31 to R34 of the third magnetic sensor 30 change such that the resistance values of the resistors R31 and R33 increase while the resistance values of the resistors R32 and R34 decrease, or the resistance values of the resistors R31 and R33 decrease while the resistance values of the resistors R32 and R34 increase. This causes a change in the potential of each of the signal output terminals E31 and E32. The third magnetic sensor 30 is configured to generate a signal corresponding to the potential of the signal output terminal E31 as the third detection signal S31 and a signal corresponding to the potential of the signal output terminal E32 as the third detection signal S32.

[0102] Next, the operation of the processor 40 will be described. The processor 40 generates a first detection value Su corresponding to a first component (a component in a direction parallel to the U direction) of the target magnetic field based on the first detection signals S11 and S12. In this embodiment, the processor 40 generates the first detection value Su by performing a calculation that includes determining the difference S11-S12 between the first detection signals S11 and S12. The first detection value Su may be the difference S11-S12 itself, or may be a value obtained by applying predetermined corrections such as gain adjustment and offset adjustment to the difference S11-S12.

[0103] Furthermore, the processor 40 generates second and third detection values based on the second detection signals S21, S22 and the third detection signals S31, S32. The second detection value is a detection value corresponding to a component of the target magnetic field in a direction parallel to the reference plane 4a and perpendicular to the first direction (direction parallel to the U direction). In this embodiment, the processor 40 generates, as the second detection value, a detection value corresponding to a component of the target magnetic field in a direction parallel to the V direction. The third detection value is a detection value corresponding to a component of the target magnetic field in a direction perpendicular to the reference plane 4a, i.e., a component parallel to the Z direction. Hereinafter, the second detection value will be represented by the symbol Sv, and the third detection value will be represented by the symbol Sz.

[0104] The processor 40 generates the second and third detection values Sv and Sz, for example, as follows: The processor 40 first generates a value S2 by an operation that includes determining the difference S21-S22 between the second detection signal S21 and the second detection signal S22, and generates a value S3 by an operation that includes determining the difference S31-S32 between the third detection signal S31 and the third detection signal S32. Next, the processor 40 calculates the values S3 and S4 using the following equations (1) and (2). S3 = (S2 + S1) / cos α … (1) S4 = (S2 - S1) / sinα … (2)

[0105] The second detection value Sv may be the value S3 itself, or may be the value S3 to which predetermined corrections such as gain adjustment and offset adjustment have been made. Similarly, the third detection value Sz may be the value S4 itself, or may be the value S4 to which predetermined corrections such as gain adjustment and offset adjustment have been made.

[0106] As described above, the U direction is a direction rotated by α from the X direction toward the −Y direction. Therefore, the first detection value Su also corresponds to the component of the target magnetic field parallel to the X direction. Furthermore, the V direction is a direction rotated by α from the Y direction toward the X direction. Therefore, the second detection value Sv also corresponds to the component of the target magnetic field parallel to the Y direction. Note that the processor 40 may generate a detection value corresponding to the component of the target magnetic field parallel to the X direction based on the first detection signals S11 and S12 or the first detection value Su. Similarly, the processor 40 may generate a detection value corresponding to the component of the target magnetic field parallel to the Y direction based on the second detection signals S21 and S22 and the third detection signals S31 and S32 or the second detection value Sv.

[0107] Next, structural features of the magnetic sensor device 1 will be described with reference to Fig. 16. Fig. 16 is an explanatory diagram for explaining the arrangement of the element arrangement region.

[0108] First, the features of the first magnetic sensor 10 will be described. The first magnetic sensor 10 includes an element arrangement region for arranging a plurality of first MR elements 50A. Hereinafter, the element arrangement region for arranging a plurality of first MR elements 50A will also be referred to as the element arrangement region of the first magnetic sensor 10. In this embodiment, the first magnetic sensor 10 is included in the first chip 2. Therefore, the element arrangement region of the first magnetic sensor 10 is also included in the first chip 2. The element arrangement region of the first magnetic sensor 10 may be located inside the first chip 2 or on the surface of the first chip 2. In this embodiment, a part or the entire upper surface 2a of the first chip 2 is the element arrangement region of the first magnetic sensor 10. Hereinafter, a case where the entire upper surface 2a of the first chip 2 is the element arrangement region of the first magnetic sensor 10 will be described as an example.

[0109] 16, the point marked with the symbol C2 indicates the center of gravity of the upper surface 2a of the first chip 2, i.e., the element arrangement region of the first magnetic sensor 10, when viewed from the first reference direction Rz. Furthermore, the point marked with the symbol C4 indicates the center of gravity of the reference plane 4a of the support 4, when viewed from the first reference direction Rz. As shown in FIG. 16, the center of gravity C2 of the element arrangement region of the first magnetic sensor 10 is offset from the center of gravity C4 of the reference plane 4a when viewed from the first reference direction Rz. In this embodiment, the offset of the center of gravity C2 from the center of gravity C4 in the second reference direction Ry is larger than the offset of the center of gravity C2 from the center of gravity C4 in the third reference direction Rx.

[0110] 16, the line marked with Ra indicates a line that passes through the center of gravity C4 and is parallel to the second reference direction Ry. Hereinafter, this line will be referred to as the reference axis Ra. In this embodiment, the center of gravity C2 overlaps with the reference axis Ra when viewed from the first reference direction Rz.

[0111] The element arrangement region of the first magnetic sensor 10 includes a first region A21, a second region A22, a third region A23, and a fourth region A24. The first region A21 is an area for arranging at least one first MR element 50A constituting the first resistor portion R11 among the multiple first MR elements 50A. The second region A22 is an area for arranging at least one first MR element 50A constituting the second resistor portion R12 among the multiple first MR elements 50A. The third region A23 is an area for arranging at least one first MR element 50A constituting the third resistor portion R13 among the multiple first MR elements 50A. The fourth region A24 is an area for arranging at least one first MR element 50A constituting the fourth resistor portion R14 among the multiple first MR elements 50A.

[0112] At least two of the first to fourth regions A21, A22, A23, and A24 are arranged along the third reference direction Rx so that at least a portion of each of the at least two regions sandwiches the reference axis Ra when viewed from the first reference direction Rz. In this embodiment, the second region A22 and the fourth region A24 are arranged along the third reference direction Rx so that the reference axis Ra is sandwiched between them when viewed from the first reference direction Rz. The first region A21 is arranged between the second region A22 and the fourth region A24 when viewed from the first reference direction Rz. The third region A23 is arranged between the first region A21 and the second region A22 when viewed from the first reference direction Rz. In the example shown in FIG. 16, the first region A21 and the third region A23 are also arranged along the third reference direction Rx so that the reference axis Ra is sandwiched between them when viewed from the first reference direction Rz.

[0113] In this embodiment, the second region A22 and the fourth region A24 are arranged symmetrically with respect to the reference axis Ra when viewed from the first reference direction Rz, and the first region A21 and the third region A23 are arranged symmetrically with respect to the reference axis Ra when viewed from the first reference direction Rz.

[0114] When the entire upper surface 2a of the first chip 2 is the element placement region of the first magnetic sensor 10, the element placement region may include an area for arranging the plurality of first pads 21. When only a portion of the upper surface 2a of the first chip 2 is the element placement region of the first magnetic sensor 10, the element placement region may or may not include an area for arranging the plurality of first pads 21.

[0115] Next, the features of the second and third magnetic sensors 20 and 30 will be described. The second magnetic sensor 20 includes an element placement region for arranging a plurality of second MR elements 50B. The third magnetic sensor 30 includes an element placement region for arranging a plurality of third MR elements 50C. In this embodiment, the second and third magnetic sensors 20 and 30 are included in the second chip 3. Therefore, the element placement region for arranging the plurality of second MR elements 50B and the element placement region for arranging the plurality of third MR elements 50C are also included in the second chip 3. In this embodiment, a common element placement region is used as the element placement region for arranging the plurality of second MR elements 50B and the element placement region for arranging the plurality of third MR elements 50C. Hereinafter, this common element placement region will also be referred to as the element placement region of the second and third magnetic sensors 20 and 30.

[0116] The element arrangement regions of the second and third magnetic sensors 20, 30 may be located inside the second chip 3 or on the surface of the second chip 3. In this embodiment, part or the entire upper surface 3a of the second chip 3 is the element arrangement region of the second and third magnetic sensors 20, 30. Hereinafter, a case where the entire upper surface 3a of the second chip 3 is the element arrangement region of the second and third magnetic sensors 20, 30 will be described as an example.

[0117] In FIG. 16, the point marked with the symbol C3 indicates the center of gravity of the upper surface 3a of the second chip 3, i.e., the element arrangement region of the second and third magnetic sensors 20 and 30, when viewed from the first reference direction Rz. As shown in FIG. 16, the center of gravity C3 of the element arrangement region of the second and third magnetic sensors 20 and 30 is offset from the center of gravity C4 of the reference plane 4a when viewed from the first reference direction Rz. In this embodiment, the offset of the center of gravity C3 from the center of gravity C4 in the second reference direction Ry is larger than the offset of the center of gravity C3 from the center of gravity C4 in the third reference direction Rx. Furthermore, in this embodiment, the center of gravity C3 overlaps with the reference axis Ra when viewed from the first reference direction Rz.

[0118] The element arrangement region for arranging the plurality of second MR elements 50B includes a first region, a second region, a third region, and a fourth region. The first region is a region for arranging at least one second MR element 50B constituting the first resistor portion R21 among the plurality of second MR elements 50B. The second region is a region for arranging at least one second MR element 50B constituting the second resistor portion R22 among the plurality of second MR elements 50B. The third region is a region for arranging at least one second MR element 50B constituting the third resistor portion R23 among the plurality of second MR elements 50B. The fourth region is a region for arranging at least one second MR element 50B constituting the fourth resistor portion R24 among the plurality of second MR elements 50B.

[0119] The element arrangement region for arranging the plurality of third MR elements 50C includes a first region, a second region, a third region, and a fourth region. The first region is a region for arranging at least one third MR element 50C constituting the first resistor portion R31 among the plurality of third MR elements 50C. The second region is a region for arranging at least one third MR element 50C constituting the second resistor portion R32 among the plurality of third MR elements 50C. The third region is a region for arranging at least one third MR element 50C constituting the third resistor portion R33 among the plurality of third MR elements 50C. The fourth region is a region for arranging at least one third MR element 50C constituting the fourth resistor portion R34 among the plurality of third MR elements 50C.

[0120] In this embodiment, a common region is used as the first region of the element arrangement region for arranging the plurality of second MR elements 50B and the first region of the element arrangement region for arranging the plurality of third MR elements 50C. Hereinafter, this common region will be referred to as a first region A31.

[0121] Similarly, in this embodiment, a common region is used as the second region of the element arrangement region for arranging the plurality of second MR elements 50B and the second region of the element arrangement region for arranging the plurality of third MR elements 50C. Hereinafter, this common region will be referred to as second region A32.

[0122] Similarly, in this embodiment, a common region is used as the third region of the element arrangement region for arranging the plurality of second MR elements 50B and the third region of the element arrangement region for arranging the plurality of third MR elements 50C. Hereinafter, this common region will be referred to as a third region A33.

[0123] Similarly, in this embodiment, a common region is used as the fourth region of the element arrangement region for arranging the plurality of second MR elements 50B and the fourth region of the element arrangement region for arranging the plurality of third MR elements 50C. Hereinafter, this common region will be referred to as a fourth region A34.

[0124] The positional relationship between the first to fourth regions A31, A32, A33, and A34 is the same as the positional relationship between the first to fourth regions A21, A22, A23, and A24 in the element arrangement region of the first magnetic sensor 10. If the first to fourth regions A21, A22, A23, and A24 in the explanation of the positional relationship between the first to fourth regions A21, A22, A23, and A24 are replaced with the first to fourth regions A31, A32, A33, and A34, respectively, the explanation of the positional relationship between the first to fourth regions A31, A32, A33, and A34 will be correct.

[0125] When the entire upper surface 3a of the second chip 3 is the element placement region for the second and third magnetic sensors 20, 30, the element placement region may include an area for arranging the plurality of second pads 31. When only a portion of the upper surface 3a of the second chip 3 is the element placement region for the second and third magnetic sensors 20, 30, the element placement region may or may not include an area for arranging the plurality of second pads 31.

[0126] Next, the operation and effect of the magnetic sensor device 1 according to this embodiment will be described. When stress occurs in the support 4 due to an external force or temperature, the stress distribution in the support 4 becomes symmetrical with respect to the center of gravity C4 of the reference plane 4a. Fig. 17 is an explanatory diagram schematically showing the stress distribution in the support 4. In Fig. 17, the stress distribution is shown by contour lines.

[0127] When stress is applied to the MR element 50, the magnetization direction of the magnetization fixed layer 52 of the MR element 50 may deviate from the designed direction. For example, when tensile stress is applied to the MR element 50 in a direction intersecting the magnetization direction of the magnetization fixed layer 52, the magnetization direction of the magnetization fixed layer 52 changes slightly toward the direction of the tensile stress. As a result, the resistance value of the MR element 50 changes when no target magnetic field is applied to the MR element 50.

[0128] Here, let us consider the effect of stress applied to each MR element 50 on the detection value, taking the first magnetic sensor 10 as an example. If the magnitude of stress applied to each first MR element 50A differs between the first resistor portion R11 and the second resistor portion R12, the amount of change in the resistance value of the first resistor portion R11 due to the stress and the amount of change in the resistance value of the second resistor portion R12 due to the stress will differ from each other. As a result, an offset occurs in the first detection signal S11.

[0129] Similarly, if the magnitude of stress applied to each of the first MR elements 50A differs between the third resistor section R13 and the fourth resistor section R14, the amount of change in the resistance value of the third resistor section R13 due to the stress and the amount of change in the resistance value of the fourth resistor section R14 due to the stress will differ from each other. As a result, an offset occurs in the first detection signal S12. The offset in the first detection signals S11 and S12 causes an offset in the first detection value Su.

[0130] In order to equalize the magnitude of the stress applied to each of the first MR elements 50A between the first resistor portion R11 and the second resistor portion R12 and the magnitude of the stress applied to each of the first MR elements 50A between the third resistor portion R13 and the fourth resistor portion R14, it is possible to mount the first chip 2 on the support body 4 so that the center of gravity of the planar shape of the first chip 2 overlaps with the center of gravity C4 of the reference plane 4a. However, in that case, depending on the sizes of the first chip 2 and the second chip 3, it may not be possible to mount the second chip 3 on the support body 4.

[0131] In contrast, in the present embodiment, the first chip 2 is shifted from the center of gravity C4 of the reference plane 4a, and the magnetization directions of the magnetization fixed layers 52 in the first to fourth resistors R11, R12, R13, and R14, the magnetization directions of the free layers 54 in the first to fourth resistors R11, R12, R13, and R14, and the arrangements of the first to fourth regions A21, A22, A23, and A24 of the element arrangement region of the first magnetic sensor 10 are defined as described above. As a result, according to the present embodiment, it is possible to suppress an offset in the first detection value Su.

[0132] The reason why the offset of the first detection value Su can be suppressed will be explained in detail below. In the following explanation, when simply referring to the resistance value, it refers to the resistance value when no target magnetic field is applied to the first magnetic sensor 10. First, a case where stress is applied to the first magnetic sensor 10 in the second reference direction Ry will be explained. Here, the resistance value of the first resistor R11 is represented by r1, the resistance value of the second resistor R12 is represented by r2, the resistance value of the third resistor R13 is represented by r3, and the resistance value of the fourth resistor R14 is represented by r4. In addition, when no stress is applied to the first magnetic sensor 10, r1, r2, r3, and r4 are assumed to be equal to each other.

[0133] The first detection value Su depends on the difference S11-S12 between the first detection signal S11 and the first detection signal S12. The difference S11-S12 depends on the potential difference E between the signal output terminals E11 and E12. The potential difference E is expressed by the following equation (3). In equation (3), V represents the voltage applied to the power supply terminal V1. E=V·(r2·r4-r1·r3) / {(r1+r2)(r3+r4)} …(3)

[0134] When stress is applied to the first magnetic sensor 10 in the second reference direction Ry, r1 and r4 increase and r2 and r3 decrease, or r1 and r4 decrease and r2 and r3 increase. Furthermore, the stress distributions in the first through fourth regions A21, A22, A23, and A24 are approximately equal to each other. Applying the above-described changes in r1, r2, r3, and r4 to equation (3), ideally, the potential difference E changes very little. Therefore, even when stress is applied to the first magnetic sensor 10 in the second reference direction Ry, there is almost no offset in the first detection value Su.

[0135] Next, we will explain the case where stress is applied to the first magnetic sensor 10 in the third reference direction Rx. When stress is applied to the first magnetic sensor 10 in the third reference direction Rx, the increase and decrease in r1, r2, r3, and r4 are the same as when stress is applied to the first magnetic sensor 10 in the second reference direction Ry. Furthermore, the stress applied to the first and third regions A21 and A23 is greater than the stress applied to the second and fourth regions A22 and A24. Therefore, the amount of change in r1 and r3 due to stress is greater than the amount of change in r2 and r4 due to stress. Applying the above-described changes in r1, r2, r3, and r4 to Equation (3), ideally, the potential difference E hardly changes. Therefore, even when stress is applied to the first magnetic sensor 10 in the third reference direction Rx, there is almost no offset in the first detection value Su.

[0136] As described above, according to this embodiment, it is possible to suppress the offset of the first detection value Su.

[0137] To achieve the above-described effect, the magnetization direction of the free layer 54 in each of the first to fourth resistor units R11, R12, R13, and R14 must be specified as described above. However, due to an external magnetic field, the magnetization direction of the free layer 54 may be opposite to the direction at the time of design. In this embodiment, the first magnetic sensor 10 includes a coil configured to apply a magnetic field in the X direction to one of the free layers 54 in each of the first and second resistor units R11 and R12 and the free layers 54 in each of the third and fourth resistor units R13 and R14, and a magnetic field in the −X direction to the other free layer 54. As a result, according to this embodiment, the magnetization direction of the free layer 54 can be aligned with the direction at the time of design.

[0138] Up to this point, the influence of stress applied to each MR element 50 has been described using the first magnetic sensor 10 as an example. The above description also applies to the second and third magnetic sensors 20 and 30. According to this embodiment, the offset of the second detection value Sv and the offset of the third detection value Sz can be suppressed.

[0139] Next, a brief description will be given of a manufacturing method of the magnetic sensor device 1 according to this embodiment. The manufacturing method of the magnetic sensor device 1 includes a step of forming a first chip 2, a step of forming a second chip 3, and a step of mounting the first and second chips 2 and 3 on a support 4.

[0140] The step of forming the first chip 2 includes a step of forming the first magnetic sensor 10. The step of forming the second chip 3 includes a step of forming the second and third magnetic sensors 20, 30. The step of forming the first magnetic sensor 10 and the step of forming the second and third magnetic sensors 20, 30 each include a step of forming a plurality of MR elements 50.

[0141] In the process of forming the plurality of MR elements 50, first, a plurality of initial MR elements are formed, which will later become the plurality of MR elements 50. Each of the plurality of initial MR elements includes an initial magnetization fixed layer, which will later become the magnetization fixed layer 52, a free layer 54, a gap layer 53, and an antiferromagnetic layer 51.

[0142] Next, the magnetization direction of the initial magnetization pinned layer is pinned to the predetermined direction using laser light and an external magnetic field of a predetermined direction. For example, for the initial MR elements that will later become the MR elements 50 constituting the first and third resistor units R11 and R13 of the first magnetic sensor 10, laser light is irradiated to the initial MR elements while applying an external magnetic field of the first magnetization direction (U direction). When the irradiation of the laser light is completed, the magnetization direction of the initial magnetization pinned layer is pinned to the first magnetization direction. As a result, the initial magnetization pinned layer becomes the magnetization pinned layer 52, and the initial MR element becomes the MR element 50. Furthermore, for the initial MR elements that will later become the MR elements 50 constituting the second and fourth resistor units R12 and R14 of the first magnetic sensor 10, the direction of the external magnetic field is set to the second magnetization direction (-U direction), thereby pinning the magnetization direction of the initial magnetization pinned layer of each of the initial MR elements to the second magnetization direction. In this manner, the MR elements 50 are formed.

[0143] [Variations] Next, a modification of the present embodiment will be described with reference to Fig. 18. Fig. 18 is a perspective view showing an MR element 50 in the modification. In the modification, each of the first to third magnetic sensors 10, 20, and 30 includes a magnetic field generator 75 including multiple magnet pairs, instead of a magnetic field generator including a coil. The magnetic field generator 75 is configured to apply a magnetic field of the third magnetization direction or a magnetic field of the fourth magnetization direction to the free layer 54.

[0144] Each of the multiple magnet pairs includes two magnets 75A and 75B. The magnet 75A is disposed near one longitudinal end of the MR element 50. The magnet 75B is disposed near the other longitudinal end of the MR element 50. The magnetization of the magnets 75A and 75B includes a component in the third magnetization direction or a component in the fourth magnetization direction. Whether the magnetization of the magnets 75A and 75B includes a component in the third magnetization direction or a component in the fourth magnetization direction is selected depending on the magnetization direction of the free layer 54 to which a magnetic field is applied by the magnets 75A and 75B when no target magnetic field is applied.

[0145] Note that when the magnetization of magnets 75A, 75B includes a component in a specific magnetization direction, the component in the specific magnetization direction may be the main component of the magnetization of magnets 75A, 75B. Alternatively, the magnetization of magnets 75A, 75B may not include a component in a direction perpendicular to the specific magnetization direction. In a variant, when the magnetization of magnets 75A, 75B includes a component in a specific magnetization direction, the magnetization direction of magnets 75A, 75B is the specific magnetization direction or approximately the specific magnetization direction.

[0146] According to a variant, the magnetic field generator 75 can prevent the magnetization of the free layer 54 from being oriented in a direction opposite to the designed direction due to an external magnetic field.

[0147] [Second embodiment] Next, a second embodiment of the present invention will be described. In the second embodiment, the magnetization direction of the free layer 54 of the MR element 50 is different from that of the first embodiment. The magnetization direction of the free layer 54 will be described below with reference to FIGS. 19 to 21. FIG. 19 is a circuit diagram showing the circuit configuration of a first magnetic sensor 10. FIG. 20 is a circuit diagram showing the circuit configuration of a second magnetic sensor 20. FIG. 21 is a circuit diagram showing the circuit configuration of a third magnetic sensor 30.

[0148] 19, the magnetization direction of the free layer 54 in each of the first to fourth resistor units R11, R12, R13, and R14 of the first magnetic sensor 10 is indicated by an open arrow when no target magnetic field is applied to the first magnetic sensor 10. As shown in FIG. 19, the magnetization of the free layer 54 in each of the first and fourth resistor units R11 and R14 of the first magnetic sensor 10 includes a component in the third magnetization direction (V direction) in the above case. The magnetization of the free layer 54 in each of the second and third resistor units R12 and R13 of the first magnetic sensor 10 includes a component in the fourth magnetization direction (-V direction) in the above case.

[0149] 20, the open arrows indicate the magnetization direction of the free layer 54 in each of the first to fourth resistor units R21, R22, R23, and R24 of the second magnetic sensor 20 when no target magnetic field is applied to the second magnetic sensor 20. If the first magnetic sensor 10, resistor units R11, R12, R13, and R14, V direction, and −V direction in the explanation of the magnetization direction of the free layer 54 in the first magnetic sensor 10 are replaced with the second magnetic sensor 20, resistor units R21, R22, R23, and R24, U direction, and −U direction, respectively, the explanation of the magnetization direction of the free layer 54 in the second magnetic sensor 20 will be correct.

[0150] 21 , the open arrows indicate the magnetization direction of the free layer 54 in each of the first to fourth resistor units R31, R32, R33, and R34 of the third magnetic sensor 30 when no target magnetic field is applied to the third magnetic sensor 30. The magnetization direction of the free layer 54 in the third magnetic sensor 30 can be explained by replacing the first magnetic sensor 10, resistor units R11, R12, R13, and R14, V direction, and −V direction in the explanation of the magnetization direction of the free layer 54 in the first magnetic sensor 10 with the third magnetic sensor 30, resistor units R31, R32, R33, and R34, U direction, and −U direction, respectively.

[0151] 11 and 12 in the first embodiment, the coil configuration, which is composed of a plurality of lower coil elements 63A and a plurality of upper coil elements 64A, is different from that in the first embodiment. In the present embodiment, this coil is configured so that a magnetic field in the X direction can be applied to one of the free layers 54 in each of the first and fourth resistor units R11, R14 and the free layers 54 in each of the second and third resistor units R12, R13, and a magnetic field in the −X direction can be applied to the other free layer 54.

[0152] 13 and 14 in the first embodiment, the configuration of the coil formed by the plurality of lower coil elements 63B and the plurality of upper coil elements 64B is different from that of the first embodiment. In the present embodiment, this coil is configured so that a magnetic field in the X direction can be applied to one of the free layers 54 in the first and fourth resistor portions R21, R24 of the second magnetic sensor 20 and the first and fourth resistor portions R31, R34 of the third magnetic sensor 30, and a magnetic field in the −X direction can be applied to the other of the free layers 54 in the second and third resistor portions R22, R23 of the second magnetic sensor 20 and the second and third resistor portions R32, R33 of the third magnetic sensor 30.

[0153] Next, the operation and effect of the magnetic sensor device 1 according to this embodiment will be described. In this embodiment, the magnetization direction of the free layer 54 in each of the first to fourth resistor units R11, R12, R13, and R14 is defined as described above. In addition, in this embodiment, the magnetization direction of the magnetization fixed layer 52 in each of the first to fourth resistor units R11, R12, R13, and R14 and the arrangement of the first to fourth regions A21, A22, A23, and A24 of the element arrangement region of the first magnetic sensor 10 are defined as described in the first embodiment (see FIG. 16). As a result, according to this embodiment, it is possible to suppress the offset of the first detection value Su.

[0154] The reason why the offset of the first detection value Su can be suppressed will be explained in detail below. First, a case where stress is applied to the first magnetic sensor 10 in the second reference direction Ry will be explained. Here, as in the first embodiment, the resistance value of the first resistor R11 is represented by r1, the resistance value of the second resistor R12 is represented by r2, the resistance value of the third resistor R13 is represented by r3, and the resistance value of the fourth resistor R14 is represented by r4. When stress is applied to the first magnetic sensor 10 in the second reference direction Ry, r1 and r2 increase and r3 and r4 decrease, or r1 and r2 decrease and r3 and r4 increase. Also, as in the first embodiment, the changes in r1, r2, r3, and r4 due to stress are approximately equal to each other. Applying the above-described changes in r1, r2, r3, and r4 to Equation (3) in the first embodiment, ideally, the potential difference E hardly changes. Therefore, even if a stress in the second reference direction Ry is applied to the first magnetic sensor 10, the offset of the first detection value Su hardly occurs.

[0155] Next, a case where stress is applied to the first magnetic sensor 10 in the third reference direction Rx will be described. When stress is applied to the first magnetic sensor 10 in the third reference direction Rx, the increase and decrease in r1, r2, r3, and r4 are the same as when stress is applied to the first magnetic sensor 10 in the second reference direction Ry. Similar to the first embodiment, the amount of change in r1 and r3 due to stress is greater than the amount of change in r2 and r4 due to stress. Applying the above-described changes in r1, r2, r3, and r4 to equation (3) in the first embodiment, ideally, the potential difference E hardly changes. Therefore, even when stress is applied to the first magnetic sensor 10 in the third reference direction Rx, there is almost no offset in the first detection value Su.

[0156] As described above, according to this embodiment, it is possible to suppress the offset of the first detection value Su.

[0157] Up to this point, the first magnetic sensor 10 has been used as an example for explanation. The above explanation also applies to the second and third magnetic sensors 20 and 30. According to this embodiment, it is possible to suppress the offset of the second detection value Sv and the offset of the third detection value Sz.

[0158] Other configurations, actions, and effects of this embodiment are the same as those of the first embodiment.

[0159] [Third embodiment] Next, a third embodiment of the present invention will be described. In the third embodiment, the layout of the element placement region of the first magnetic sensor 10 and the layout of the element placement regions of the second and third magnetic sensors 20, 30 are different from those of the first embodiment. The layout of the element placement region will be described below with reference to Fig. 22. Fig. 22 is an explanatory diagram for explaining the layout of the element placement region.

[0160] First, the arrangement of the first to fourth regions A21, A22, A23, and A24 of the element arrangement region of the first magnetic sensor 10 will be described. In this embodiment, the second region A22 and the third region A23 are arranged along the third reference direction Rx so as to sandwich the reference axis Ra when viewed from the first reference direction Rz. The first region A21 is arranged between the second region A22 and the third region A23 when viewed from the first reference direction Rz. The fourth region A24 is arranged between the first region A21 and the third region A23 when viewed from the first reference direction Rz. In the example shown in FIG. 22, the first region A21 and the fourth region A24 are also arranged along the third reference direction Rx so as to sandwich the reference axis Ra when viewed from the first reference direction Rz.

[0161] In this embodiment, the second region A22 and the third region A23 are arranged symmetrically with respect to the reference axis Ra when viewed from the first reference direction Rz, and the first region A21 and the fourth region A24 are arranged symmetrically with respect to the reference axis Ra when viewed from the first reference direction Rz.

[0162] Next, we will explain the arrangement of the first to fourth regions A31, A32, A33, and A34 of the element arrangement regions of the second and third magnetic sensors 20 and 30. The positional relationship between the first to fourth regions A31, A32, A33, and A34 is similar to the positional relationship between the first to fourth regions A21, A22, A23, and A24 of the element arrangement region of the first magnetic sensor 10. If the first to fourth regions A21, A22, A23, and A24 in the explanation of the positional relationship between the first to fourth regions A21, A22, A23, and A24 are replaced with the first to fourth regions A31, A32, A33, and A34, respectively, the explanation of the positional relationship between the first to fourth regions A31, A32, A33, and A34 will be correct.

[0163] Next, the operation and effect of the magnetic sensor device 1 according to this embodiment will be described. In this embodiment, the arrangement of the first to fourth regions A21, A22, A23, and A24 of the element arrangement region of the first magnetic sensor 10 is defined as described above. Furthermore, in this embodiment, the magnetization direction of the magnetization fixed layer 52 in each of the first to fourth resistor units R11, R12, R13, and R14 of the first magnetic sensor 10 and the magnetization direction of the magnetization free layer 54 in each of the first to fourth resistor units R11, R12, R13, and R14 are defined as described in the first embodiment (see FIG. 8). As a result, according to this embodiment, it is possible to suppress the offset of the first detection value Su.

[0164] The reason why the offset of the first detection value Su can be suppressed will be explained in detail below. First, a case where stress is applied to the first magnetic sensor 10 in the second reference direction Ry will be described. Here, as in the first embodiment, the resistance value of the first resistor R11 is represented by r1, the resistance value of the second resistor R12 is represented by r2, the resistance value of the third resistor R13 is represented by r3, and the resistance value of the fourth resistor R14 is represented by r4. As in the first embodiment, when stress is applied to the first magnetic sensor 10 in the second reference direction Ry, r1 and r4 increase and r2 and r3 decrease, or r1 and r4 decrease and r2 and r3 increase. Furthermore, the stress distributions in the first to fourth regions A21, A22, A23, and A24 are approximately equal to each other. Therefore, the changes in r1, r2, r3, and r4 due to stress are approximately equal to each other. The manner in which r1, r2, r3, and r4 change is the same as the manner in which r1, r2, r3, and r4 change when stress in the second reference direction Ry is applied to the first magnetic sensor 10 in the first embodiment. Therefore, for the same reason as described in the first embodiment, even if stress in the second reference direction Ry is applied to the first magnetic sensor 10, almost no offset occurs in the first detection value Su.

[0165] Next, a case where stress is applied to the first magnetic sensor 10 in the third reference direction Rx will be described. When stress is applied to the first magnetic sensor 10 in the third reference direction Rx, the increase and decrease of r1, r2, r3, and r4 is the same as when stress is applied to the first magnetic sensor 10 in the second reference direction Ry. Furthermore, the stress applied to the first and fourth regions A21 and A24 is greater than the stress applied to the second and third regions A22 and A23. Therefore, the change in r1 and r4 due to stress is greater than the change in r2 and r3 due to stress. Applying the change in r1, r2, r3, and r4 described above to equation (3) in the first embodiment, ideally, the potential difference E hardly changes. Therefore, even when stress is applied to the first magnetic sensor 10 in the third reference direction Rx, there is almost no offset in the first detection value Su.

[0166] As described above, according to this embodiment, it is possible to suppress the offset of the first detection value Su.

[0167] Up to this point, the first magnetic sensor 10 has been used as an example for explanation. The above explanation also applies to the second and third magnetic sensors 20 and 30. According to this embodiment, it is possible to suppress the offset of the second detection value Sv and the offset of the third detection value Sz.

[0168] Other configurations, actions, and effects of this embodiment are the same as those of the first embodiment.

[0169] [Fourth embodiment] Next, a fourth embodiment of the present invention will be described. In the fourth embodiment, the layout of the element placement region of the first magnetic sensor 10 and the layout of the element placement regions of the second and third magnetic sensors 20, 30 are different from those of the first embodiment. The layout of the element placement region will be described below with reference to Fig. 23. Fig. 23 is an explanatory diagram for explaining the layout of the element placement region.

[0170] First, the arrangement of the first to fourth regions A21, A22, A23, and A24 of the element arrangement region of the first magnetic sensor 10 will be described. In this embodiment, the first region A21 and the fourth region A24 are arranged along the third reference direction Rx so that at least a portion of each of the first and fourth regions A21 and A24 sandwiches the reference axis Ra when viewed from the first reference direction Rz. The second region A22 and the third region A23 are arranged along the third reference direction Rx so that at least a portion of each of the second and third regions A22 and A23 sandwiches the reference axis Ra when viewed from the first reference direction Rz. The second region A22 and the third region A23 are arranged ahead of the first region A21 and the fourth region A24, respectively, in the Y direction.

[0171] In particular, in this embodiment, the first region A21 and the fourth region A24 are arranged symmetrically with respect to the reference axis Ra when viewed from the first reference direction Rz. The second region A22 and the third region A23 are arranged symmetrically with respect to the reference axis Ra when viewed from the first reference direction Rz. Furthermore, the first region A21 and the second region A22 are arranged symmetrically with respect to a virtual straight line L1 that is perpendicular to the reference axis Ra when viewed from the first reference direction Rz. The third region A23 and the fourth region A24 are arranged symmetrically with respect to the virtual straight line L1 when viewed from the first reference direction Rz.

[0172] Next, we will explain the arrangement of the first to fourth regions A31, A32, A33, and A34 of the element arrangement region of the second and third magnetic sensors 20 and 30. The positional relationship of the first to fourth regions A31, A32, A33, and A34 is the same as the positional relationship of the first to fourth regions A21, A22, A23, and A24 of the element arrangement region of the first magnetic sensor 10, except for the arrangement of the second and third regions A32 and A33 relative to the first and fourth regions A31 and A34. In the explanation of the positional relationships of the first to fourth regions A21, A22, A23, A24, if the first to fourth regions A21, A22, A23, A24 are replaced with the first to fourth regions A31, A32, A33, A34, respectively, the explanation becomes of the positional relationships of the first to fourth regions A31, A32, A33, A34 other than the arrangement of the second and third regions A32, A33 relative to the first and fourth regions A31, A34.

[0173] The second region A32 and the third region A33 are disposed further in the -Y direction than the first region A31 and the fourth region A34, respectively. Furthermore, the first region A31 and the second region A32 are disposed symmetrically about a virtual line L2 that is perpendicular to the reference axis Ra when viewed from the first reference direction Rz. The third region A33 and the fourth region A34 are disposed symmetrically about the virtual line L2 when viewed from the first reference direction Rz.

[0174] Next, the operation and effect of the magnetic sensor device 1 according to this embodiment will be described. In this embodiment, the arrangement of the first to fourth regions A21, A22, A23, and A24 of the element arrangement region of the first magnetic sensor 10 is defined as described above. Furthermore, in this embodiment, the magnetization direction of the magnetization fixed layer 52 in each of the first to fourth resistor units R11, R12, R13, and R14 of the first magnetic sensor 10 and the magnetization direction of the magnetization free layer 54 in each of the first to fourth resistor units R11, R12, R13, and R14 are defined as described in the first embodiment (see FIG. 8). As a result, according to this embodiment, it is possible to suppress the offset of the first detection value Su.

[0175] The reason why the offset of the first detection value Su can be suppressed will be described in detail below. First, a case where stress is applied to the first magnetic sensor 10 in the second reference direction Ry will be described. Here, as in the first embodiment, the resistance value of the first resistor R11 is represented by r1, the resistance value of the second resistor R12 is represented by r2, the resistance value of the third resistor R13 is represented by r3, and the resistance value of the fourth resistor R14 is represented by r4. When stress is applied to the first magnetic sensor 10 in the second reference direction Ry, r1 and r4 increase and r2 and r3 decrease, or r1 and r4 decrease and r2 and r3 increase. Furthermore, the stress applied to the first and fourth regions A21 and A24 is greater than the stress applied to the second and third regions A22 and A23. Therefore, the amount of change in r1 and r4 due to stress is greater than the amount of change in r2 and r3 due to stress. The manner in which r1, r2, r3, and r4 change is the same as the manner in which r1, r2, r3, and r4 change when stress in the third reference direction Rx is applied to the first magnetic sensor 10 in the first embodiment. Therefore, for the same reason as described in the first embodiment, even if stress in the second reference direction Ry is applied to the first magnetic sensor 10, almost no offset occurs in the first detection value Su.

[0176] Next, a case where stress is applied to the first magnetic sensor 10 in the third reference direction Rx will be described. When stress is applied to the first magnetic sensor 10 in the third reference direction Rx, the increase and decrease of r1, r2, r3, and r4 is the same as when stress is applied to the first magnetic sensor 10 in the second reference direction Ry. Furthermore, the stress distributions in the first to fourth regions A21, A22, A23, and A24 are approximately equal to each other. Therefore, the amount of change in r1, r2, r3, and r4 due to stress is approximately equal to each other. The change in r1, r2, r3, and r4 described above is the same as the change in r1, r2, r3, and r4 when stress is applied to the first magnetic sensor 10 in the second reference direction Ry in the first embodiment. Therefore, for the same reason as described in the first embodiment, even if stress in the third reference direction Rx is applied to the first magnetic sensor 10, there is almost no offset in the first detection value Su.

[0177] As described above, according to this embodiment, it is possible to suppress the offset of the first detection value Su.

[0178] Up to this point, the first magnetic sensor 10 has been used as an example for explanation. The above explanation also applies to the second and third magnetic sensors 20 and 30. According to this embodiment, it is possible to suppress the offset of the second detection value Sv and the offset of the third detection value Sz.

[0179] Other configurations, actions, and effects of this embodiment are the same as those of the first embodiment.

[0180] [Fifth embodiment] Next, a fifth embodiment of the present invention will be described. In the fifth embodiment, the layout of the element placement region of the first magnetic sensor 10 and the layout of the element placement regions of the second and third magnetic sensors 20, 30 differ from those of the fourth embodiment. The layout of the element placement region will be described below with reference to Fig. 24. Fig. 24 is an explanatory diagram for explaining the layout of the element placement region.

[0181] First, the arrangement of the first to fourth regions A21, A22, A23, and A24 of the element arrangement region of the first magnetic sensor 10 will be described. The arrangement of the first to fourth regions A21, A22, A23, and A24 is the same as that of the fourth embodiment, except for the arrangement of the second and third regions A22 and A23 relative to the first and fourth regions A21 and A24. In this embodiment, the second region A22 and the third region A23 are arranged ahead of the first region A21 and the fourth region A24 in the -Y direction, respectively.

[0182] Next, the arrangement of the first to fourth regions A31, A32, A33, and A34 of the element arrangement regions of the second and third magnetic sensors 20 and 30 will be described. The arrangement of the first to fourth regions A31, A32, A33, and A34 is the same as that of the fourth embodiment, except for the arrangement of the second and third regions A32 and A33 relative to the first and fourth regions A31 and A34. In this embodiment, the second region A32 and the third region A33 are arranged ahead of the first region A31 and the fourth region A34 in the Y direction, respectively.

[0183] Next, the operation and effect of the magnetic sensor device 1 according to this embodiment will be described. In this embodiment, the arrangement of the first to fourth regions A21, A22, A23, and A24 of the element arrangement region of the first magnetic sensor 10 is defined as described above. Furthermore, in this embodiment, the magnetization direction of the magnetization fixed layer 52 in each of the first to fourth resistor units R11, R12, R13, and R14 of the first magnetic sensor 10 and the magnetization direction of the magnetization free layer 54 in each of the first to fourth resistor units R11, R12, R13, and R14 are defined as described in the first embodiment (see FIG. 8). As a result, according to this embodiment, it is possible to suppress the offset of the first detection value Su.

[0184] The reason why the offset of the first detection value Su can be suppressed will be described in detail below. First, a case where stress in the second reference direction Ry is applied to the first magnetic sensor 10 will be described. Here, as in the fourth embodiment (first embodiment), the resistance value of the first resistor R11 is represented by r1, the resistance value of the second resistor R12 is represented by r2, the resistance value of the third resistor R13 is represented by r3, and the resistance value of the fourth resistor R14 is represented by r4. As in the fourth embodiment, when stress in the second reference direction Ry is applied to the first magnetic sensor 10, r1 and r4 increase and r2 and r3 decrease, or r1 and r4 decrease and r2 and r3 increase. Furthermore, the stress applied to the first and fourth regions A21 and A24 is smaller than the stress applied to the second and third regions A22 and A23. Therefore, the amount of change in r1 and r4 due to stress is smaller than the amount of change in r2 and r3 due to stress. When the above-mentioned changes in r1, r2, r3, and r4 are applied to equation (3) in the first embodiment, ideally, the potential difference E hardly changes. Therefore, even if stress in the third reference direction Rx is applied to the first magnetic sensor 10, there is almost no offset in the first detection value Su.

[0185] Next, a case where stress is applied to the first magnetic sensor 10 in the third reference direction Rx will be described. When stress is applied to the first magnetic sensor 10 in the third reference direction Rx, the manner in which r1, r2, r3, and r4 increase or decrease is the same as when stress is applied to the first magnetic sensor 10 in the second reference direction Ry. Similarly to the fourth embodiment, the amounts of change in r1, r2, r3, and r4 due to stress are approximately equal to each other. The manner in which r1, r2, r3, and r4 change is the same as the manner in which r1, r2, r3, and r4 change when stress is applied to the first magnetic sensor 10 in the third reference direction Rx in the fourth embodiment. Therefore, for the same reason as described in the fourth embodiment, even when stress is applied to the first magnetic sensor 10 in the third reference direction Rx, almost no offset occurs in the first detection value Su.

[0186] As described above, according to this embodiment, it is possible to suppress the offset of the first detection value Su.

[0187] Up to this point, the first magnetic sensor 10 has been used as an example for explanation. The above explanation also applies to the second and third magnetic sensors 20 and 30. According to this embodiment, it is possible to suppress the offset of the second detection value Sv and the offset of the third detection value Sz.

[0188] Other configurations, actions, and effects of this embodiment are the same as those of the fourth embodiment.

[0189] The present invention is not limited to the above-described embodiments, and various modifications are possible. For example, the magnetic sensor device and magnetic sensor system of the present invention are not limited to cases where the relative position of a magnetic field generator with respect to the magnetic sensor device is detected, but can also be applied to cases where the attitude of a magnetic sensor device that is configured to be rotatable within a predetermined magnetic field is detected.

[0190] Furthermore, the multiple second MR elements 50B of the second magnetic sensor 20 and the multiple third MR elements 50C of the third magnetic sensor 30 may be formed not only on the inclined surfaces 35a, 35b of each of the multiple groove portions 35c, but also on the inclined surfaces of multiple protrusions protruding in the Z direction from the upper surface of the insulating layer 35.

[0191] In addition, the second chip 3 may include, instead of the second and third magnetic sensors 20, 30, two magnetic sensors used to generate detection values corresponding to a component of the external magnetic field in a direction parallel to the V direction and a component of the external magnetic field in a direction parallel to the Z direction.

[0192] In addition, the first chip 2 may include, instead of the first magnetic sensor 10, one magnetic sensor used to generate a detection value corresponding to a component of the external magnetic field in a direction parallel to the V direction, and the second chip 3 may include, instead of the second and third magnetic sensors 20, 30, two magnetic sensors used to generate a detection value corresponding to a component of the external magnetic field in a direction parallel to the U direction and a detection value corresponding to a component of the external magnetic field in a direction parallel to the Z direction.

[0193] Furthermore, the processor 40 does not have to be included in the support 4 and does not have to be integrated with the first and second chips 2, 3.

[0194] The first to third magnetic sensors 10, 20, and 30 may be included in a single chip. In this case, the reference plane may be the top surface of the single chip. The element arrangement region of the first magnetic sensor 10 and the element arrangement regions of the second and third magnetic sensors 20 and 30 may be included in the reference plane.

[0195] Furthermore, the magnetic sensor device 1 may not include one of the first chip 2 and the second chip 3.

[0196] The element arrangement region of the first magnetic sensor 10 and the element arrangement regions of the second and third magnetic sensors 20, 30 may be arranged in an orientation rotated 90° around the center of gravity C4 of the reference plane 4a from the orientation shown in the drawings. In this case, the second reference direction is parallel to the X direction, and the third reference direction is parallel to the Y direction.

[0197] In addition, the element placement area of the first magnetic sensor 10 and the element placement areas of the second and third magnetic sensors 20, 30 may be arranged in an orientation rotated 180° around the center of gravity C4 of the reference plane 4a from the orientation shown in the drawing.

[0198] The angle that the first magnetization direction makes with respect to the second reference direction Ry may be 0° or 90°.

[0199] In the third to fifth embodiments, the magnetization direction of the free layer 54 of the MR element 50 may be the same as that of the second embodiment. [Explanation of symbols]

[0200] 1...magnetic sensor device, 2...first chip, 3...second chip, 4...support, 4a...reference plane, 6, 7...adhesive, 10...first magnetic sensor, 20...second magnetic sensor, 21...first pad, 30...third magnetic sensor, 31...second pad, 40...processor, 41...third pad, 50...MR element, 51...antiferromagnetic layer, 52...magnetization fixed layer, 53...gap layer, 54...free layer, 75...magnetic field generator, 100...magnetic sensor system, 101...magnetic field generator, 300...articulation mechanism, 310...first member, 311...shaft portion, 312...spherical portion, 32 0...second member, 321...shaft portion, 322...receiving portion, A21, A31...first region, A22, A32...second region, A23, A33...third region, A24, A34...fourth region, P11...first connection point, P12...second connection point, P21, P22, P31, P32...connection points, R11, R21, R31...first resistance portion, R12, R22, R32...second resistance portion, R13, R23, R33...third resistance portion, R14, R24, R34...fourth resistance portion, Ra...reference axis, Rx...third reference direction, Ry...second reference direction, Rz...first reference direction.

Claims

1. At least one magnetic sensor including a plurality of magnetoresistive elements and an element placement area for placing the plurality of magnetoresistive elements, and configured to detect a target magnetic field that is a magnetic field to be detected; a support supporting the at least one magnetic sensor and having a reference plane; at least one chip including the at least one magnetic sensor and mounted on the reference plane; the at least one chip has a top surface and a plurality of pads disposed on the top surface; the element placement area is a portion of the top surface of the at least one chip; when viewed from a first reference direction, the center of gravity of the element arrangement region is displaced from the center of gravity of the reference plane in a second reference direction, the first reference direction is a direction perpendicular to the reference plane, and the second reference direction is a direction orthogonal to the first reference direction; The at least one magnetic sensor further comprises: A power supply terminal and A ground end and a first signal output terminal; a first resistor portion connected to one of the power supply terminal and the ground terminal and the first signal output terminal; a second resistor portion connected to the other of the power supply terminal and the ground terminal and the first signal output terminal; the plurality of magnetoresistive effect elements constitute the first and second resistance portions, each of the plurality of magnetoresistive effect elements includes a magnetization fixed layer having a magnetization whose direction is fixed, a free layer having a magnetization whose direction is changeable in response to the target magnetic field, and a gap layer disposed between the magnetization fixed layer and the free layer; the magnetization of the magnetization fixed layer in the first resistance section includes a component in a first magnetization direction, and the first magnetization direction is a direction intersecting the first reference direction; the magnetization of the magnetization fixed layer in the second resistance section includes a component in a second magnetization direction, the second magnetization direction being a direction that intersects the first reference direction and is opposite to the first magnetization direction; the magnetization of the free layer in the first resistive section includes a component of a third magnetization direction when the target magnetic field is not applied to the at least one magnetic sensor, the third magnetization direction being a direction that intersects the first reference direction and is orthogonal to the first magnetization direction; the magnetization of the free layer in the second resistive section includes a component of a fourth magnetization direction when the target magnetic field is not applied to the at least one magnetic sensor, the fourth magnetization direction being a direction that intersects the first reference direction and is opposite to the third magnetization direction; the plurality of pads include a plurality of first pads aligned along the second reference direction, and a plurality of second pads arranged at positions different from the plurality of first pads in a third reference direction orthogonal to each of the first reference direction and the second reference direction and aligned along the second reference direction; The magnetic sensor device is characterized in that the element arrangement region is arranged between the plurality of first pads and the plurality of second pads.

2. The at least one magnetic sensor further comprises: a second signal output terminal; a third resistor connected to the other of the power supply terminal and the ground terminal and the second signal output terminal; a fourth resistor portion connected to the one of the power supply terminal and the ground terminal and the second signal output terminal; the plurality of magnetoresistive effect elements constitute the first to fourth resistance portions, the magnetization of the magnetization fixed layer in the third resistance unit includes a component in the first magnetization direction, the magnetization of the magnetization fixed layer in the fourth resistance section includes a component in the second magnetization direction, the magnetization of the free layer in the third resistive portion includes a component in the fourth magnetization direction when the target magnetic field is not applied to the at least one magnetic sensor; The magnetic sensor device according to claim 1, characterized in that the magnetization of the free layer in the fourth resistive section includes a component in the third magnetization direction when the target magnetic field is not applied to the at least one magnetic sensor.

3. a deviation of the center of gravity of the element placement area from the center of gravity of the reference plane in the second reference direction is larger than a deviation of the center of gravity of the element placement area from the center of gravity of the reference plane in the third reference direction; 2. The magnetic sensor device according to claim 1, wherein the angle that the first magnetization direction makes with respect to the second reference direction is within a range greater than 0° and less than 90°.

4. the at least one magnetic sensor further includes a magnetic field generator; 2. The magnetic sensor device according to claim 1, wherein the magnetic field generator is configured to apply a magnetic field to the free layer in a direction that intersects with each of the first to fourth magnetization directions.

5. the at least one magnetic sensor further includes a magnetic field generator; 2. The magnetic sensor device according to claim 1, wherein the magnetic field generator is configured to apply a magnetic field of the third magnetization direction or a magnetic field of the fourth magnetization direction to the free layer.

6. The magnetic sensor device according to claim 1, characterized in that the deviation of the center of gravity of the element placement area from the center of gravity of the reference plane in the second reference direction is greater than the deviation of the center of gravity of the element placement area from the center of gravity of the reference plane in the third reference direction.

7. The magnetic sensor device according to claim 6, characterized in that the center of gravity of the element placement area, when viewed from the first reference direction, overlaps with a reference axis, which is a straight line passing through the center of gravity of the reference plane and parallel to the second reference direction.

8. the magnetic sensor device includes one specific magnetic sensor as the at least one magnetic sensor, The magnetic sensor device according to claim 1, wherein the specific magnetic sensor is configured to detect a unidirectional component of the target magnetic field and generate at least one detection signal corresponding to the unidirectional component.

9. 9. The magnetic sensor device according to claim 8, wherein the at least one chip is a chip including the specific magnetic sensor.

10. the magnetic sensor device includes two specific magnetic sensors as the at least one magnetic sensor; 2. The magnetic sensor device according to claim 1, wherein the two specific magnetic sensors are configured to detect components of the target magnetic field in two different directions, respectively.

11. 11. The magnetic sensor device according to claim 10, wherein the at least one chip is a chip including the two specific magnetic sensors.

12. 11. The magnetic sensor device according to claim 10, wherein the two directions of the target magnetic field are inclined with respect to the reference plane and the first reference direction, respectively.

13. the magnetic sensor device includes a first magnetic sensor, a second magnetic sensor, and a third magnetic sensor as the at least one magnetic sensor; the first magnetic sensor is configured to detect a component of the target magnetic field in a first direction; the second magnetic sensor is configured to detect a component of the target magnetic field in a second direction; the third magnetic sensor is configured to detect a component of the target magnetic field in a third direction; the magnetic sensor device includes, as the at least one chip, a first chip including the first magnetic sensor and a second chip including the second and third magnetic sensors; 2. The magnetic sensor device according to claim 1, wherein the first and second chips are arranged along the second reference direction.

14. the first direction is a direction parallel to the reference plane; the second direction is a direction inclined with respect to both the reference plane and the first reference direction, 14. The magnetic sensor device according to claim 13, wherein the third direction is another direction inclined with respect to both the reference plane and the first reference direction.

15. At least one magnetic sensor including a plurality of magnetoresistive elements and an element placement area for placing the plurality of magnetoresistive elements, and configured to detect a target magnetic field that is a magnetic field to be detected; a support supporting the at least one magnetic sensor and having a reference plane; at least one chip including the at least one magnetic sensor and mounted on the reference plane; the at least one chip has a top surface and a plurality of pads disposed on the top surface; the element placement area is a portion of the top surface of the at least one chip; when viewed from a first reference direction, the center of gravity of the element arrangement region is displaced from the center of gravity of the reference plane in a second reference direction, the first reference direction is a direction perpendicular to the reference plane, and the second reference direction is a direction orthogonal to the first reference direction; The at least one magnetic sensor further comprises: a first resistance portion and a second resistance portion connected in series in a first path that is a path electrically connecting the first connection point and the second connection point; a third resistor portion and a fourth resistor portion connected in series in a second path that is a path that electrically connects the first connection point and the second connection point; the first and fourth resistor portions are connected to the first connection point; the second and third resistor portions are connected to the second connection point; the plurality of magnetoresistive effect elements constitute the first to fourth resistance portions, each of the plurality of magnetoresistive effect elements includes a magnetization fixed layer having a magnetization whose direction is fixed, a free layer having a magnetization whose direction is changeable in response to the target magnetic field, and a gap layer disposed between the magnetization fixed layer and the free layer; the magnetization of the magnetization fixed layer in each of the first and third resistance units includes a component in a first magnetization direction, and the first magnetization direction is a direction intersecting the first reference direction; the magnetization of the magnetization fixed layer in each of the second and fourth resistance units includes a component in a second magnetization direction, the second magnetization direction being a direction that intersects the first reference direction and is opposite to the first magnetization direction; the magnetization of the free layer in each of two of the first to fourth resistive units includes a component of a third magnetization direction when the target magnetic field is not applied to the at least one magnetic sensor, the third magnetization direction being a direction that intersects the first reference direction and is orthogonal to the first magnetization direction; the magnetization of the free layer in each of the other two resistor units among the first to fourth resistor units includes a component of a fourth magnetization direction when the target magnetic field is not applied to the at least one magnetic sensor, the fourth magnetization direction being a direction that intersects the first reference direction and is opposite to the third magnetization direction; the plurality of pads include a plurality of first pads aligned along the second reference direction, and a plurality of second pads arranged at positions different from the plurality of first pads in a third reference direction orthogonal to each of the first reference direction and the second reference direction and aligned along the second reference direction; The magnetic sensor device is characterized in that the element arrangement region is arranged between the plurality of first pads and the plurality of second pads.

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