Imprint method, semiconductor device manufacturing method, and imprint device

Abstract

To suppress pattern formation failures.SOLUTION: An imprint method in an embodiment is for processing a substrate where a plurality of shots are coated with a resin. A target shot that is a target of imprint processing among the plurality of shots is subjected to first processing, and at least a part of shots that are not the targets of the imprint processing among the plurality of shots is subjected to second processing, wherein the first processing pushes a template against the resin, cures the resin, releases the template from the resin while supplying gas from the outer edge part side of the template, and transfers a pattern of the template onto the resin, and the second processing brings the template close to the resin without contacting the resin, and separates the template from the resin while supplying the gas from the outer edge part side of the template.SELECTED DRAWING: Figure 10

Description

[Technical Field]

[0001] FIELD Embodiments of the present invention relate to an imprint method, a method for manufacturing a semiconductor device, and an imprint apparatus. [Background technology]

[0002] The manufacturing process of semiconductor devices may include an imprint process. In the imprint process, a template is pressed against a resin applied to a substrate to transfer a pattern of the template. During this process, an inert gas or the like is supplied from the outer edge of the template to prevent air bubbles from being mixed into the resin. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2016-92198 [Patent Document 2] Patent No. 6735656 [Patent Document 3] Patent No. 6603678 Summary of the Invention [Problem to be solved by the invention]

[0004] An object of one embodiment is to provide an imprint method, a semiconductor device manufacturing method, and an imprint apparatus that can suppress pattern formation defects. [Means for solving the problem]

[0005] An imprinting method according to an embodiment is an imprinting method for processing a substrate on which resin has been applied in a plurality of shots, in which a first process is performed on target shots among the plurality of shots that are to be subjected to the imprinting process, and a second process is performed on at least some of the non-target shots among the plurality of shots that are not to be subjected to the imprinting process, in which the first process presses a template against the resin, hardens the resin, and releases the template from the resin while supplying gas from the outer edge side of the template, thereby transferring a pattern on the template to the resin, and in the second process, brings the template close to the resin without contacting it, and releases the template from the resin while supplying gas from the outer edge side of the template. [Brief explanation of the drawings]

[0006] [Figure 1] FIG. 1 is a diagram showing an example of the arrangement of an imprint apparatus according to a first embodiment. [Figure 2] 1A to 1C are diagrams illustrating in order some of the steps of the method for manufacturing a semiconductor device according to the first embodiment. [Figure 3] 1A to 1C are diagrams illustrating in order some of the steps of the method for manufacturing a semiconductor device according to the first embodiment. [Figure 4] 1A to 1C are diagrams illustrating in order some of the steps of the method for manufacturing a semiconductor device according to the first embodiment. [Figure 5] 1A to 1C are diagrams illustrating in order some of the steps of the method for manufacturing a semiconductor device according to the first embodiment. [Figure 6] 1A to 1C are diagrams illustrating in order some of the steps of the method for manufacturing a semiconductor device according to the first embodiment. [Figure 7] 1A to 1C are diagrams illustrating in order some of the steps of the method for manufacturing a semiconductor device according to the first embodiment. [Figure 8] 1A to 1C are diagrams illustrating in order some of the steps of the method for manufacturing a semiconductor device according to the first embodiment. [Figure 9] 1A to 1C are diagrams illustrating in order some of the steps of the method for manufacturing a semiconductor device according to the first embodiment. [Figure 10] 1A to 1C are diagrams illustrating in order some of the steps of the method for manufacturing a semiconductor device according to the first embodiment. [Figure 11] 1A to 1C are diagrams illustrating in order some of the steps of the method for manufacturing a semiconductor device according to the first embodiment. [Figure 12] 1A to 1C are diagrams illustrating in order some of the steps of the method for manufacturing a semiconductor device according to the first embodiment. [Figure 13] 1A to 1C are diagrams illustrating in order some of the steps of the method for manufacturing a semiconductor device according to the first embodiment. [Figure 14] 1A to 1C are diagrams illustrating in order some of the steps of the method for manufacturing a semiconductor device according to the first embodiment. [Figure 15] 10A to 10C are diagrams illustrating in order some of the steps of the method for manufacturing a semiconductor device according to the second embodiment. [Figure 16] 10A to 10C are diagrams illustrating in order some of the steps of the method for manufacturing a semiconductor device according to the second embodiment. [Figure 17] 10A to 10C are diagrams illustrating in order some of the steps of the method for manufacturing a semiconductor device according to the second embodiment. [Figure 18] 10A to 10C are diagrams illustrating in order some of the steps of the method for manufacturing a semiconductor device according to the second embodiment. [Figure 19] 10A to 10C are diagrams illustrating in order some of the steps of the method for manufacturing a semiconductor device according to the second embodiment. [Figure 20] 10A to 10C are diagrams illustrating in order some of the steps of the method for manufacturing a semiconductor device according to the second embodiment. [Figure 21] 10A to 10C are diagrams illustrating in order some of the steps of the method for manufacturing a semiconductor device according to the second embodiment. [Figure 22] 10A to 10C are diagrams illustrating in order some of the steps of the method for manufacturing a semiconductor device according to the second embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0007] The present invention will be described in detail below with reference to the drawings. Note that the present invention is not limited to the following embodiments. Furthermore, the components in the following embodiments include those that can be easily imagined by a person skilled in the art or that are substantially the same.

[0008] [Embodiment 1] Hereinafter, the first embodiment will be described in detail with reference to the drawings.

[0009] (Configuration example of an imprint device) 1 is a diagram showing an example of the configuration of an imprint apparatus 1 according to embodiment 1. Fig. 1(a) is a schematic diagram showing the overall configuration of the imprint apparatus 1, and Fig. 1(b) is a top view of a template stage 81 provided in the imprint apparatus 1, viewed from below.

[0010] As shown in FIG. 1, the imprint apparatus 1 includes a template stage 81, a wafer stage 82, an alignment scope 83, a spread scope 84, a reference mark 85, an alignment unit 86, a stage base 88, a light source 89, a supply pipe 71, a valve 72, a gas flow path 73, a gas hole 74, and a control unit 90.

[0011] The imprint apparatus 1 is also installed with a template 10 that transfers a pattern to the resist on the wafer 30. The template 10 is made of a transparent material such as quartz, and is placed with the pattern facing the wafer stage 82 on which the wafer 30 is placed.

[0012] Furthermore, a design device 2 and an inspection device 3 are connected to the control unit 90 of the imprint apparatus 1 so that various types of information can be acquired.

[0013] The design device 2 is a device that designs the design of the semiconductor device, the layout of wiring and other configurations within the semiconductor device, and the layout of the semiconductor device on a wafer at the beginning of the semiconductor device manufacturing process. The design device 2 transmits, for example, various layout information related to the wafer 30 that is the target of the imprint process to the control unit 90 of the imprint apparatus 1.

[0014] The inspection device 3 is a device that performs a predetermined inspection on, for example, the wafer 30 before the imprint process. The inspection device 3 transmits the inspection results of the wafer 30 to the control unit 90 of the imprint apparatus 1. The control unit 90 of the imprint apparatus 1 may be connected to a plurality of inspection devices that transmit various inspection results.

[0015] The wafer stage 82 of the imprint apparatus 1 includes a wafer chuck 82b and a main body 82a. The wafer chuck 82b holds the template 10, for example, in a recess provided on its upper surface, and fixes the wafer 30 at a predetermined position on the main body 82a. The upper surface of the wafer chuck 82b is positioned at approximately the same height as the upper surface of the wafer 30 held in the recess of the wafer chuck 82b.

[0016] A reference mark 85 is provided on the wafer stage 82. The reference mark 85 is used when aligning the wafer stage 82 on which the wafer 30 is loaded and the template 10.

[0017] The wafer stage 82 places the wafer 30 thereon and moves within a plane (horizontal plane) parallel to the placed wafer 30. The wafer stage 82 moves the wafer 30 below the template 10 when performing a transfer process onto the wafer 30.

[0018] The stage base 88 supports the template 10 by means of the template stage 81, and moves up and down (vertically) to press the pattern of the template 10 against the resist on the wafer 30. At this time, the template stage 81 is configured to be able to eject an inert gas such as helium gas or carbon dioxide gas downward from the bottom surface thereof.

[0019] The imprint apparatus 1 includes a supply pipe 71, a valve 72, a gas flow path 73, and a gas hole 74 as a gas supply unit, which serves as a mechanism for ejecting an inert gas.

[0020] The upstream end of supply pipe 71 is connected to a gas supply source 70 such as a gas cylinder. Gas supply source 70 is filled with an inert gas such as helium gas or carbon dioxide gas. The downstream end of supply pipe 71 branches into multiple supply pipes 71e, 71w, 71n, and 71s, each of which is connected to a template stage 81.

[0021] A valve 72 is provided in supply pipe 71 downstream of gas supply source 70. Furthermore, valves 72e, 72w, . . . are provided in supply pipes 71e, 71w, 71n, 71s downstream of the branched portions of supply pipe 71, respectively.

[0022] The template stage 81 holds the template 10, for example, in a recess provided on the underside. The template stage 81 is provided with gas flow paths 73e, 73w... to which the downstream ends of supply pipes 71e, 71w, 71n, and 71s are respectively connected and which lead to the underside near the outer edges of the four sides of the approximately rectangular template 10. Gas holes 74e, 74w, 74n, and 74s to which the gas flow paths 73e, 73w... are respectively connected are provided on the underside of the template stage 81 near the outer edges of the four sides of the template 10.

[0023] The lower surface of the template stage 81 is disposed at approximately the same height as the lower surface of the template 10 held in the recess of the template stage 81. The pattern of the template 10 is provided so as to protrude downward from the lower surface of the template 10.

[0024] With this configuration, the template stage 81 can eject inert gas from the gas holes 74e, 74w, 74n, and 74s provided on each side of the outer edge of the four sides of the template 10 while holding the template 10.

[0025] An alignment unit 86 is provided on the stage base 88. The alignment unit 86 detects the position of the wafer 30 and the position of the template 10 based on alignment marks and the like provided on the wafer 30 and the template 10.

[0026] The alignment unit 86 includes a detection system 86a and an illumination system 86b. The illumination system 86b irradiates light onto the wafer 30 and the template 10. The detection system 86a uses an alignment scope 83 to detect images of alignment marks and the like provided on the wafer 30 and the template 10, and aligns the wafer 30 and the template 10 based on the detection results. The detection system 86a also uses a spread scope 84 to detect whether the resist has filled the pattern on the template 10 when the template 10 is pressed against the resist on the wafer 30.

[0027] The detection system 86a and the illumination system 86b each include mirrors 86x and 86y such as dichroic mirrors as imaging units. The mirrors 86x and 86y form images from the wafer 30 and the template 10 using light from the illumination system 86b.

[0028] Specifically, light Lb from illumination system 86b is reflected by mirror 86y downward, where the template 10 and wafer 30 are located. Light La from the wafer 30 and template 10 is reflected by mirror 86x toward detection system 86a, and travels toward spreadscope 84. Light Lc from the wafer 30 and template 10 passes through mirrors 86x and 86y, and travels toward alignment scope 83 above.

[0029] The light source 89 serving as a curing unit is a device that irradiates light such as ultraviolet light capable of curing the resist, and is provided above the stage base 88. The light source 89 irradiates light from above the template 10 while the template 10 is pressed against the resist. However, the light irradiated by the light source 89 may be light other than ultraviolet light, such as infrared light, visible light, or electromagnetic waves, as long as it is capable of curing the resist.

[0030] The control unit 90 is an information processing device that performs various processes for controlling the imprint apparatus 1. The control unit 90 includes, for example, a CPU (Central Processing Unit), a ROM (Read Only Memory), and a RAM (Random Access Memory), and is configured including a computer that performs predetermined arithmetic processing and control processing according to a program.

[0031] The control unit 90 controls the mechanisms involved in the imprint process, such as the template stage 81, wafer stage 82, stage base 88, light source 89, and bulbs 72, 72e, 72w, etc., based on observation images acquired by the alignment scope 83, spread scope 84, etc. At this time, the control unit 90 refers to the layout information acquired from the design device 2 described above and the inspection results acquired from the inspection device 3 described above.

[0032] (Method of manufacturing a semiconductor device) Next, a method for manufacturing the semiconductor device according to the first embodiment will be described with reference to Fig. 2 to Fig. 14. Fig. 2 to Fig. 14 are diagrams illustrating, in order, some of the steps of the method for manufacturing the semiconductor device according to the first embodiment. The method for manufacturing the semiconductor device according to the first embodiment includes an imprint process on the wafer 30.

[0033] 2 shows a plan view of a wafer 30 that is to be subjected to the imprint process of embodiment 1. The wafer 30 as a substrate is a wafer that is to be subjected to the imprint process described below.

[0034] 2, the wafer 30 has a plurality of shots SH (SHn, SHp, SHe) formed through a plurality of manufacturing processes. Each of these shots SH is an element that serves as a unit of individual processing in the manufacturing process of a semiconductor device.

[0035] Of the multiple shots SH formed on the wafer 30, shot SHn is a shot formed in an area other than the peripheral edge of the wafer 20. Shot SHn has all the predetermined configurations that a shot SH should have in terms of design, and has, for example, a rectangular shape with a predetermined area. When the wafer 30 undergoes multiple manufacturing processes thereafter, one or multiple semiconductor devices are obtained from one shot SHn.

[0036] Of the multiple shots SH formed on the wafer 30, the shot SHp is a missing shot formed on the peripheral edge of the wafer 30. The shot SHp is formed on the wafer 30 in such a way that a portion of the shot SH does not have a predetermined configuration that the shot SH should have in terms of design.

[0037] In other words, the shot SHp has an area that is a predetermined percentage less than the area that the shot SH should have, and is a shot SH with a portion of its rectangular shape missing. Depending on the shape and area of ​​the shot SHp, there may be shots SHp from which one or more semiconductor devices can be obtained, and shots SHp from which no semiconductor devices can be obtained.

[0038] Among the multiple shots SH formed on the wafer 30, the shot SHHe is a shot SH in which some kind of defect has occurred in the manufacturing process up to that point. Examples of defects that can occur in the manufacturing process include the number of particles, contamination level, etc. exceeding a predetermined range, or the configuration that should be obtained in a predetermined manufacturing process not meeting a defined standard.

[0039] These defect determinations are based on the results of inspections performed by various inspection devices after a wafer has gone through a specified manufacturing process. Generally, the number of shots SHe on a single wafer tends to increase as the wafer goes through more manufacturing processes.

[0040] In the example of Fig. 2, two of the multiple shots SH are judged to be defective shots SHe. However, regardless of the example of Fig. 2, a chipped shot SHp may also be judged to be defective.

[0041] Next, an example of a process for forming a plurality of films on the wafer 30 in the process of manufacturing the semiconductor device of embodiment 1 is shown in the cross-sectional view of Figure 3. Figure 3 shows a cross-sectional view of the wafer 30 at a predetermined shot SH.

[0042] 3, a plurality of films including a resist film 160 to be subjected to imprint processing are formed on the wafer 30. However, in film formation processing on the wafer 30, individual films are generally formed on the entire wafer 30 rather than processing each shot SH. These film formation processes are performed using, for example, a thermal oxidation device and a coating device.

[0043] 3(a), the wafer 30 includes a silicon substrate 100 and a film to be processed 120 formed on the silicon substrate 100. The film to be processed 120 is a film to be processed using a layered mask structure described later, and is, for example, a single-layer film such as a silicon oxide film or a silicon nitride film, or a layered film in which multiple films are stacked.

[0044] An SOC (Spin On Carbon) film 130 is formed on the processing target film 120. The SOC film 130 is a film formed by, for example, a spin coating method, and is an organic film containing carbon.

[0045] 3(b), an SOG (Spin On Glass) film 140 is formed on the SOC film 130. The SOG film 140 is a film formed by, for example, a spin coating method, and is an inorganic film such as a silicon oxide film.

[0046] An adhesion film 150 is formed on the SOG film 140. The adhesion film 150 is an organic film to which, for example, a surfactant containing fluorine atoms or silicon atoms, or a silane coupling agent, etc. is added. The adhesion film 150 improves adhesion between a resist film 160 to be formed later and the underlying SOG film 140.

[0047] As shown in Fig. 3(c), a resist film 160 is formed on the adhesion film 150. A so-called photoresist material, a silicon-containing resist material, or the like can be used as the resist film 160, and the resist film 160 is an example of a photocurable resin formed by, for example, a spin coating method. The resist film 160 shown in Fig. 3(c) is a target film for the imprint process described below, and is in a liquid state with fluidity until it is subjected to the imprint process.

[0048] The layered structure of the SOC film 130, the SOG film 140, the adhesion film 150, and the resist film 160 formed on the workpiece film 120 is also referred to as a layered mask structure, for example. Each film in the layered mask structure has a different etching resistance to a different etching gas. By utilizing the differences in the properties of each of these films and patterning each film in turn, the workpiece film 120 can be processed while maintaining the thick mask structure.

[0049] 4 and 5 are plan views showing an example of imprint processing by the imprint apparatus 1 of embodiment 1. The imprint processing by the imprint apparatus 1 is performed sequentially for each of the multiple shots SH of the wafer 30. In other words, each time the template 10 is pressed against the wafer 30, one shot SH is imprinted.

[0050] As described above, the control unit 90 of the imprint apparatus 1 acquires layout information related to the wafer 30 from the design apparatus 2. The layout information includes information related to non-target shots SHp that are not subject to imprint processing, among shots SHp that are arranged on the periphery of the wafer 30 and are missing a portion. Non-target shots are shots SHp that are missing a portion by a predetermined ratio or more compared to normal shots SHn that are arranged in an area other than the periphery of the wafer 30.

[0051] In other words, among the shots SHp with missing parts, small shots SHp that do not meet the predetermined area cannot be used to obtain a single semiconductor device, and there is no benefit to performing imprint processing. Also, if the area of ​​the shot SHp is too small, it is difficult to stably press the template 10 against the shot SHp and perform the imprint processing. For this reason, such shots SHp are excluded from the imprint processing.

[0052] Furthermore, the control unit 90 of the imprint apparatus 1 acquires the inspection results of the wafer 30 from the inspection apparatus 3. The inspection results include information about non-target shots, which are determined to be defective by the inspection apparatus 3 and are therefore no longer subject to the imprint process, among the multiple shots SH included in the wafer 30.

[0053] For example, if the cause of the defect is a particle or a foreign substance, performing the imprint process may result in the particle or foreign substance adhering to the template 10, causing contamination, or may damage the template 10 and the wafer 30 due to dirt getting caught between the template 10 and the wafer 30. For this reason, all or some of the shots SHe determined to be defective are excluded from the imprint process.

[0054] As described above, multiple inspection devices may be connected to the control unit 90 of the imprint apparatus 1, and the non-target shots that have been determined to be defective may be information obtained by accumulating information provided by these multiple inspection devices. In the example of Fig. 4, the two shots SHe that have been determined to be defective as shown in Fig. 2 are designated as non-target shots.

[0055] In this way, non-target shots that are not subject to the imprint process may include shots SHp that have less than a predetermined area among the defective shots, and shots SHe that have been determined to be defective before the imprint process.

[0056] The control unit 90 determines the shots SH other than the non-target shots as target shots to be subjected to imprint processing based on the information on the non-target shots and the layout information acquired from the design apparatus 2. The target shots are shots SHp having an area equal to or larger than a predetermined value among the chipped shots on the peripheral edge of the wafer 30, and shots SHn other than the shots SHhe determined to be defective among the normal shots arranged outside the peripheral edge of the wafer 30.

[0057] However, the control unit 90 may acquire information on target shots together with or instead of the information on non-target shots from the design device 2 and the inspection device 3. When acquiring information on target shots instead of information on non-target shots, the control unit 90 determines shots other than those designated as target shots as non-target shots.

[0058] Incidentally, in the imprint apparatus 1, a processing order for performing imprint processing on the multiple shots SH provided on the wafer 30 is determined in advance. The processing order for the multiple shots SH is determined so that imprint processing is performed sequentially on adjacent shots SH, for example, to enable efficient processing.

[0059] Such a processing order for multiple shots SH can be, for example, a step-and-repeat method, in which multiple adjacent shots SH are processed sequentially while the processing direction is reversed between the peripheral edges of the wafer 30 on both sides of the wafer 30 that face each other in the horizontal direction of the page, as shown in Figures 4 and 5.

[0060] More specifically, imprint processing is performed sequentially in either the left or right direction for a row of shots SH aligned horizontally on the paper surface, and each time processing for one row is completed, imprint processing is performed sequentially in the opposite direction for a row of adjacent shots SH aligned vertically on the paper surface.

[0061] In this way, by starting the process from the bottom or top end of the wafer 30 and finishing the process at the opposite end, it is possible to efficiently perform imprint processing on a plurality of shots SH.

[0062] However, it is also possible to use a step-and-repeat method in which imprint processing is performed sequentially in either the up or down direction on a row of shots SH aligned vertically on the paper, and each time processing for one row is completed, imprint processing is performed sequentially in the opposite direction on an adjacent row of shots SH aligned horizontally on the paper.

[0063] In this way, by starting the processing from the right or left edge of the wafer 30 and finishing the processing at the opposite edge, it is possible to efficiently perform imprint processing on a plurality of shots SH.

[0064] The imprint process using the step-and-repeat method will be described in more detail with reference to FIGS.

[0065] 4, the control unit 90 of the imprint apparatus 1 moves the wafer stage 82 on which the wafer 30 is placed, and sequentially processes one row of shots SH at the bottom end of the wafer 30. In the example of Fig. 4, the processing proceeds from the shot SH at the right end of the page to the shot SH at the left end of the page, but the processing order may be reversed, from the left end of the page to the right end of the page.

[0066] All six shots SH at the bottom end of the wafer 30 are shots SHp with portions missing. Of the six shots SHp, the two on the left and right are non-target shots with an area less than the specified value, and the four in the middle are target shots with an area that meets the specified value.

[0067] The control unit 90 skips the process for the non-target shots at both ends and performs the transfer process PRin for the four target shots in the center. The transfer process PRin will be described in detail later.

[0068] 5, after processing of the shots SH at the bottom end of the wafer 30 is completed, the control unit 90 processes the adjacent row of shots SH in the upward direction of the page. As in the example of FIG. 4, if the shots SH at the bottom end of the wafer 30 are processed from the right end to the left end, the shots SH in the second row from the bottom end are processed from the left end to the right end.

[0069] Of the eight shots SH in the second row, the two on the left and right are non-target shots, and the six in the middle are target shots.

[0070] The control unit 90 skips the processing for the non-target shots at both ends and performs the transfer process PRin for the six target shots in the center. Details of the transfer process PRin are shown in the cross-sectional views of FIGS.

[0071] The transfer process PRin as the first process is a process in which the template 10 is pressed against the resist film 160, ultraviolet light is irradiated through the template 10 to harden the resist film 160, and the template 10 is released from the resist film 160 while helium gas or the like is supplied from the template stage 81 on the outer edge side of the template 10, and the pattern 10p of the template 10 is transferred to the resist film 160.

[0072] FIG. 6 shows how the transfer process PRin is performed on one of the shots SH at the bottom end of the wafer 30.

[0073] 6(a), the control unit 90 of the imprint apparatus 1 moves the wafer stage 82, for example, from the right side of the page, to position a predetermined shot SH of the wafer 30 below the template 10. This causes the predetermined shot SH of the wafer 30 and the pattern 10p of the template 10 to face each other. At this time, the space between the shot SH and the template 10 is filled with a high-concentration atmosphere of an inert gas such as helium gas or carbon dioxide gas.

[0074] Furthermore, the control unit 90 uses the alignment scope 83 to observe, from above the template 10 and the wafer 30, an alignment mark (not shown) provided on the template 10 and an alignment mark (not shown) formed on the wafer 30.

[0075] The control unit 90, while referring to this observation image, moves the wafer stage 82 so that the alignment marks of the template 10 and the wafer 30 overlap each other in the vertical direction. As a result, the shot SH to be imprinted on the wafer 30 and the pattern 10p of the template 10 are roughly aligned.

[0076] Rough alignment is an operation of roughly aligning the positions of the shot SH of the wafer 30 and the pattern 10p of the template 10 before pressing the template 10 against the resist film 160 of the wafer 30.

[0077] As shown in FIG. 6( b ), the control unit 90 lowers the template 10 while observing the template 10 and the wafer 30 from above the template 10 and the wafer 30 with the spread scope 84 .

[0078] As a result, the template 10 is pressed against the resist film 160 of the wafer 30. At this time, in order to prevent contact between the wafer 30 and the template 10, the lowering position of the template 10 is adjusted so that the convex portions of the pattern 10p of the template 10 are positioned slightly above the bottom surface of the resist film 160.

[0079] When the template 10 comes into contact with the resist film 160 of the wafer 30, the control unit 90 performs fine alignment of the template 10 and the wafer 30 while referring to the observation image from the spreadscope 84. Fine alignment is an operation of precisely aligning the positions of the shot SH of the wafer 30 and the pattern 10p of the template 10 with precision while the template 10 is in contact with the resist film 160.

[0080] On the other hand, when the template 10 is pressed against the resist film 160 of the wafer 30, the resist film 160 fills in the recesses of the pattern 10p so as to follow the unevenness of the pattern 10p of the template 10.

[0081] The control unit 90, while referring to the observation image from the spreadscope 84, maintains the template 10 pressed against the resist film 160 in parallel with the fine alignment, and in some cases even after the fine alignment is completed, until the resist film 160 fills the recesses of the pattern 10p of the template 10.

[0082] At this time, a high concentration inert gas atmosphere is formed around the resist film 160 and the template 10. This prevents gas such as air from being trapped between the resist film 160 and the template 10, thereby preventing bubbles from being trapped in the resist film 160.

[0083] On the other hand, when an inert gas is supplied around the resist film 160 and the template 10, helium gas has an extremely small atomic size and is easily diffused from the resist film 160 and easily dissolved into the resist film 160. Carbon dioxide gas also has the property of being easily dissolved into the resist film 160. Therefore, the helium gas, carbon dioxide gas, or the like is prevented from remaining in the resist film 160 as bubbles.

[0084] As shown in Figure 6(c), when the resist film 160 fills the recesses of the pattern 10p of the template 10, the light source 89 irradiates ultraviolet light Le from above the template 10 and the wafer 30 while keeping the template 10 pressed against the resist film 160.

[0085] The ultraviolet light Le preferably has a wavelength of, for example, 10 nm or more and 400 nm or less. However, the irradiated light may be other light than ultraviolet light, such as infrared light, visible light, or electromagnetic waves, as long as it can harden the resist film 160.

[0086] The ultraviolet light Le passes through the transparent template 10 and is irradiated onto the resist film 160. This causes the resist film 160, which is made of, for example, a photocurable resin, to harden, and the pattern 10p of the template 10 is transferred.

[0087] While the template 10 is still pressed against the hardened resist film 160, the control unit 90 supplies an inert gas such as helium gas downward from the underside of the template stage 81, on the side of the shot SH where the next imprint process will be performed.

[0088] 6(c), the shot SH to be imprinted next is on the left side of the page. The control unit 90 opens the valves 72 and 72e shown in FIG. 1 to eject inert gas from the gas hole 74e out of the four gas holes 74e, 74w, 74n, and 74s on the underside of the template stage 81.

[0089] 6(d), when the template 10 is lifted, the template 10 is released from the resist pattern 160p, thereby forming the resist pattern 160p in the target shot.

[0090] The resist pattern 160p has a pattern that is an inversion of the pattern 10p of the template 10. Furthermore, residual resist films 160r are formed in the recesses between the protruding patterns of the resist pattern 160p. This is because the protruding portions of the pattern 10p of the template 10 are maintained slightly above the bottom surface of the resist film 160 when the template 10 is pressed against the resist pattern 160p.

[0091] The inert gas is continuously supplied from the gas holes 74e even when the template 10 is separated from the resist pattern 160p. Therefore, by the operation of lifting the template 10, part of the inert gas being supplied downward from the shot SH side where the next imprint process will be performed is drawn into the gap between the resist pattern 160p and the template 10.

[0092] Furthermore, when the template 10 is placed above the shot SH on the left side of the page where the next imprinting process will be performed, the air between the next shot SH and the template 10 is replaced with an inert gas such as helium gas or carbon dioxide gas, creating a high concentration atmosphere of inert gas.

[0093] FIG. 7 shows how the transfer process PRin is performed on one of the shots SH in the second row from the bottom end of the wafer 30.

[0094] 7(a), the control unit 90 moves the wafer stage 82, for example, from the left side of the drawing, to position a predetermined shot SH of the wafer 30 below the template 10. At this time, a high-concentration atmosphere of inert gas such as helium gas is formed between the shot SH and the template 10. This inert gas was supplied during the imprint process for the shot SH immediately before this shot SH, replacing the air between the shot SH and the template 10.

[0095] The control unit 90 performs rough alignment between the shot SH of the wafer 30 and the pattern 10p of the template 10 based on the image observed by the alignment scope 83.

[0096] As shown in Figure 7(b), the control unit 90 lowers the template 10 to contact the resist film 160 on the wafer 30, and in this state, performs fine alignment between the shot SH of the wafer 30 and the pattern 10p of the template 10 based on the observation image by the spreadscope 84.

[0097] During this process, the resist film 160 fills the recesses of the pattern 10p of the template 10. At this time, too, in an atmosphere of high concentration of inert gas such as helium gas, it is possible to prevent bubbles such as air from being trapped in the resist film 160.

[0098] As shown in FIG. 7(c), once the resist film 160 has filled the recesses of the pattern 10p of the template 10, the light source 89 irradiates the template 10 and the wafer 30 with ultraviolet light Le from above, thereby hardening the resist film 160.

[0099] Furthermore, the control unit 90 supplies an inert gas such as helium gas downward from the bottom surface of the template stage 81, on the side of the shot SH where the next imprint process will be performed.

[0100] 7(c), the shot SH to be imprinted next is located on the right side of the page. The control unit 90 opens the valves 72 and 72w shown in FIG. 1 to eject inert gas from the gas hole 74w out of the four gas holes 74e, 74w, 74n, and 74s on the underside of the template stage 81.

[0101] 7(d), when the template 10 is raised, the template 10 is released from the resist pattern 160p. During this release process, the supply of inert gas from the gas holes 74w continues. As a result, when the template 10 moves above the shot SH on the right side of the page where the next imprint process will be performed, the space between the next shot SH and the template 10 becomes a high-concentration atmosphere of inert gas, such as helium gas.

[0102] Next, an example of the imprint process subsequent to the processes of FIGS. 4 and 5 described above is shown in the plan views of FIGS.

[0103] When the processing of the shots SH in the second row from the bottom edge of the wafer 30 is completed, the control unit 90 performs processing of the shots SH in the third row adjacent to the top of the page. In the example of Fig. 5, the processing of the shots SH in the second row is performed from the left end to the right end, so the shots SH in the third row are processed from the right end to the left end.

[0104] 8, the fourth shot SH from the right end of the third column is a shot SHe that has been determined to be defective and is therefore a non-target shot that will not undergo imprint processing. The control unit 90 skips processing for the rightmost shot SHp, performs transfer processing PRin for the following two shots SH, and then performs non-transfer processing PRbr instead of transfer processing PRin for the fourth shot SHe from the right end. Details of the non-transfer processing PRbr will be described later.

[0105] As shown in FIG. 9, when the processing of the shots SH in the third row from the bottom end of the wafer 30 is completed, the control unit 90 performs processing of the shots SH in the fourth row adjacent thereto in the upper direction.

[0106] That is, the control unit 90 performs the transfer process PRin on the shots SH in order from the left end, in the opposite direction to the third row. Then, the control unit 90 performs the non-transfer process PRbr on the fourth shot SHe from the left end. Details of the non-transfer process PRbr are shown in the cross-sectional views of FIGS. 10 and 11.

[0107] The second process, the non-transfer process PRbr, is a process in which the template 10 is brought close to the resist film 160 without contact, and then the template 10 is separated from the resist film 160 while supplying helium gas or the like from the template stage 81 on the outer edge side of the template 10.

[0108] FIG. 10 shows how the non-transfer process PRbr is performed on the shots SHe in the third row from the bottom edge of the wafer 30.

[0109] As shown in FIG. 10(a), the control unit 90 moves the wafer stage 82 from the right side of the page, for example, to position the shots SHe in the third row from the bottom edge of the wafer 30 below the template 10.

[0110] At this time, the control unit 90 may also perform rough alignment between the shot SH of the wafer 30 and the pattern 10p of the template 10 based on the observation image by the alignment scope 83. However, the non-transfer process PRbr does not require high-precision alignment as in the above-mentioned transfer process PRin.

[0111] Also at this time, an inert gas such as helium gas supplied in the imprint process for the immediately preceding shot SH may be present between the shot SH and the template 10.

[0112] As shown in FIG. 10(b), the control unit 90 lowers the template 10 to approach the resist film 160 on the wafer 30. At this time, the distance by which the template 10 is lowered is, for example, longer than half the distance by which the template 10 was lowered during the transfer process PRin, but shorter than the distance by which the template 10 was lowered during the transfer process PRin. Preferably, the distance by which the template 10 is lowered is controlled so as to minimize the distance between the template 10 and the resist film 160 while avoiding contact with the resist film 160. The control unit 90 may control the lowering position of the template 10 based on an image observed by the spreadscope 84.

[0113] As shown in Figure 10(c), with the template 10 in close proximity to the resist film 160, the control unit 90 supplies an inert gas such as helium gas downward from the underside of the template stage 81, on the side of the shot SH where the next imprint process will be performed.

[0114] 10(c), the shot SH to be imprinted next is on the left side of the page. The control unit 90 opens the valves 72 and 72e shown in FIG. 1 to eject inert gas from the gas hole 74e out of the four gas holes 74e, 74w, 74n, and 74s on the underside of the template stage 81.

[0115] 10(d), the control unit 90 raises the template 10 while continuing to supply the inert gas from the gas holes 74e. As a result, when the template 10 moves above the shot SH on the left side of the page where the next imprint process will be performed, the space between the next shot SH and the template 10 becomes a high-concentration atmosphere of an inert gas such as helium gas.

[0116] The speed at which the template 10 is lifted can be adjusted in various ways, for example, based on the release speed of the template 10 during the transfer process PRin. In other words, the lifting speed of the template 10 during the non-transfer process PRbr may be equal to, faster than, or slower than the release speed of the template 10 during the transfer process PRin.

[0117] FIG. 11 shows how the non-transfer process PRbr is performed on the shots SHe in the fourth row from the bottom edge of the wafer 30.

[0118] 11(a), the control unit 90 moves the wafer stage 82 from the left side of the drawing, for example, to position the shots SHe in the fourth row from the bottom end of the wafer 30 below the template 10.

[0119] As shown in Figure 11(b), the control unit 90 lowers the template 10 so that the lowering distance is more than half but less than the lowering distance of the template 10 during the transfer process PRin, and brings the template 10 close to the resist film 160 on the wafer 30 while avoiding contact with the resist film 160, preferably so that the distance between the template 10 and the resist film 160 is as small as possible.

[0120] As shown in FIG. 11(c), while the template 10 is brought close to the resist film 160, the control unit 90 supplies an inert gas such as helium gas downward from the underside of the template stage 81, on the side of the shot SH where the next imprint process will be performed.

[0121] 11(c), the shot SH to be imprinted next is on the right side of the page. The control unit 90 opens the valves 72 and 72w shown in FIG. 1 to eject inert gas from the gas hole 74w out of the four gas holes 74e, 74w, 74n, and 74s on the underside of the template stage 81.

[0122] 11(d), the control unit 90 raises the template 10 while continuing to supply the inert gas from the gas holes 74w. As a result, when the template 10 moves above the shot SH on the right side of the page where the next imprint process will be performed, the space between the next shot SH and the template 10 becomes a high-concentration atmosphere of an inert gas such as helium gas.

[0123] In the example of FIG. 11(d), the rising speed of the template 10 in the non-transfer process PRbr can also be adjusted as appropriate to be equal to, faster than, or slower than the release speed of the template 10 in the transfer process PRin.

[0124] As shown in the plan view of Figure 12, when processing of the shots SH in the fourth row from the bottom end of the wafer 30 is completed, the control unit 90 sequentially processes the shots SH in the fifth row adjacent above, and then the shots SH in the sixth row.

[0125] The control unit 90 performs the transfer process PRin on the shot SH in the fifth row, from the right end to the left end, in the opposite direction to that of the fourth row. The control unit 90 also performs the transfer process PRin on the shot SH in the sixth row, from the left end to the right end, in the opposite direction to that of the fifth row.

[0126] As shown in Figure 13, the control unit 90 skips processing for the shot SHp located at the right end of the second row from the top of the wafer 30, performs transfer processing PRin for multiple target shots SH in the center of the second row, and then skips processing for the shot SHp located at the left end of the second row.

[0127] In addition, the control unit 90 skips processing for the shot SHp at the left end of the top edge of the wafer 30, performs transfer processing PRin for multiple shots SH at the center of the top edge, and then skips processing for the shot SHp at the right end of the top edge.

[0128] In this way, the transfer process PRin is completed for all shots SH that are the target of the imprint process. Also, the non-transfer process PRbr is completed for the shots SHe that have been determined to be defective among the non-target shots on the wafer 30. In addition, the processing of shots SHp that are defective shots with less than a predetermined area is skipped.

[0129] With the above, the imprint process for the wafer 30 according to the first embodiment is completed.

[0130] Thereafter, the resist film 160 of non-target shots, such as the shot SHp for which the imprint process was skipped and the shot SHe for which the non-transfer process PRbr was performed, is irradiated with ultraviolet light to be hardened. The hardening process of the resist film 160 for the non-target shots is performed, for example, by an exposure device. The entire surface of the wafer 30, including the non-target shots, may be irradiated with ultraviolet light to harden the resist film 160 for multiple non-target shots at once.

[0131] 14, the processing target film 120 is processed using the layered mask structure including the resist pattern 160p, and the resist pattern 160p is transferred to the processing target film 120. Details of this will be described below.

[0132] As shown in FIG. 14(a), the resist pattern 160p formed by the imprint process has a resist residual film 160r between the projecting patterns.

[0133] 14(b), the remaining resist film 160r between the protruding patterns of the resist pattern 160p and the adhesive film 150 are removed by anisotropic etching using, for example, oxygen plasma. The adhesive film 150 becomes a patterned adhesive film 150p. Furthermore, the SOG film 140 is etched using the resist pattern 160p as a mask to form an SOG pattern 140p.

[0134] 14(c), the SOC film 130 is etched using the SOG pattern 140p as a mask to form an SOC pattern 130p. Note that the resist pattern 160p and the adhesive film 150p are organic films similar to the SOC pattern 130p. Therefore, the resist pattern 160p and the adhesive film 150p disappear in this process.

[0135] 14(d), the processing target film 120 is etched using the SOC pattern 130p as a mask to form a patterned processing target film 120p. Then, the SOG pattern 140p on the SOC pattern 130p is removed. Alternatively, the film thickness of the SOG pattern 140p may be adjusted in advance so that the SOG pattern 140p disappears when the processing target film 120p is etched. Thereafter, the SOC pattern 130p is removed by ashing using oxygen plasma.

[0136] 14(e), a metal film 170 such as a tungsten film is formed to cover the entire surface of the processing target film 120p. The metal film 170 also fills in the pattern transferred to the processing target film 120p.

[0137] 14(f), the metal film 170 on the upper surface of the processing target film 120p is removed by CMP (Chemical Mechanical Polishing), etc. As a result, a wiring 170w is formed within the pattern of the processing target film 120p.

[0138] After this, various manufacturing steps are further carried out to manufacture the semiconductor device of the first embodiment.

[0139] (Overview) When performing imprint processing, in order to prevent air bubbles from being mixed into the resist film, the resist film and the template may be surrounded by an inert gas atmosphere such as helium gas or carbon dioxide gas when imprinting the template onto the resist film and hardening the resist film.

[0140] However, in imprint processing, the processing of a defective shot may be skipped, and the concentration of the surrounding inert gas may not be stable in the shot following the skipped shot.

[0141] If there is a shortage of inert gas, bubbles may be trapped in the resist film of that shot, whereas if there is an excess of inert gas, protrusion-like resist defects may occur near that shot, resulting in pattern defects due to the template riding up, or particles.

[0142] The inventors investigated the cause of the unstable inert gas concentration in the shot following a skipped shot, and found that when performing imprint processing on adjacent shots consecutively, the inert gas supplied from the outer edge of the template is drawn into a position directly below the template by the template release operation for that shot, allowing the imprint processing of the next shot to be performed in an atmosphere of inert gas with an appropriate concentration.

[0143] According to the imprinting method of embodiment 1, for shots SH among the multiple shots SH that have been determined to be defective by pre-inspection, a non-transfer process PRbr is performed in which the template 10 is brought close to the resist film 160 without contacting the template 10, and an inert gas is supplied from the outer edge side of the template 10 to separate the template 10 from the resist film 160.

[0144] As a result, the operation of releasing the template 10 is performed even for shots SHe that do not involve pattern transfer of the template 10, and at that time, the inert gas supplied from the outer edge side of the template 10 can be drawn into a position directly below the template 10. Therefore, the imprint process can be performed on the shot SH that follows the shot SHe in an atmosphere of inert gas with an appropriate concentration.

[0145] This makes it possible to prevent bubbles from entering the resist film 160 of the next shot SH and to prevent protrusions of the resist film 160 in the vicinity of the shot SH, thereby preventing defective formation of the resist pattern 160p.

[0146] Furthermore, the template 10 is simply brought close to the shots SHe that have been determined to be defective without coming into contact with them, which prevents the template 10 from being contaminated by particles, foreign matter, etc. on the shots SHe, and prevents the template 10 and the wafer 30 from being damaged by dust or the like.

[0147] [Embodiment 2] Hereinafter, the second embodiment will be described in detail with reference to the drawings. The imprint processing of the second embodiment differs from the first embodiment in that the non-transfer processing is also performed on some of the missing shots arranged on the wafer periphery.

[0148] The imprint process of the second embodiment can be performed by using a control unit provided in the imprint apparatus of the second embodiment to control, for example, each component similar to that of the imprint apparatus 1 of the first embodiment. Therefore, in the following description, each component except for the control unit provided in the imprint apparatus of the second embodiment will be described using the same reference numerals as those of the imprint apparatus 1 of the above-described FIG.

[0149] (Method of manufacturing a semiconductor device) 15 to 22, a method for manufacturing a semiconductor device according to embodiment 2 will be described. FIGS. 15 to 22 are diagrams illustrating, in order, some of the steps of the method for manufacturing a semiconductor device according to embodiment 2. The method for manufacturing a semiconductor device according to embodiment 2 includes an imprint process on a wafer 30.

[0150] The imprint process of the second embodiment is carried out on the wafer 30 in the same manner as in the example of the first embodiment. However, in the imprint process of the second embodiment, in addition to the shot SHe that has been determined to be defective, the non-transfer process PRbr described above is also carried out on the first shot SHp after the direction of processing is reversed in the processing order of the step-and-repeat method.

[0151] As shown in Figure 15, the transfer process PRin is performed on multiple shots SH at the bottom end of the wafer 30, for example, sequentially from the right end to the left end, as in the above-mentioned embodiment 1, and then the transfer process PRin is performed on multiple shots SH in the second row from the bottom end, sequentially from the left end to the right end.

[0152] In this case, according to the example of the first embodiment, the leftmost shot SHp, which is the first missing shot in the second row, is an out-of-target shot that does not meet the predetermined area. In the second embodiment, the processing of this shot SHp is not skipped, but the non-transfer processing PRbr is performed on this shot SHp.

[0153] 16, the transfer process PRin is then performed on the multiple shots SH in the third row, sequentially from the right end to the left end. According to the example of the first embodiment, the rightmost shot SHp, which is the first defective shot in the third row, is also a non-target shot that does not meet the predetermined area. In the second embodiment, the non-transfer process PRbr is also performed on this shot SHp.

[0154] Furthermore, among the multiple shots SH in the third row, there is a shot SHe that has been determined to be defective. As in the first embodiment, the non-transfer process PRbr is also performed on this shot SHe.

[0155] 17 and 18 are cross-sectional views showing how the non-transfer process PRbr is performed on the shot SHp on the peripheral edge of the wafer 30. The non-transfer process PRbr on the shot SHp on the peripheral edge of the wafer 30 is performed in the same manner as the non-transfer process PRbr on the shot SHe that has been determined to be defective in the first embodiment described above.

[0156] FIG. 17 shows how the non-transfer process PRbr is performed on the leftmost shot SHp in the second row.

[0157] As shown in Figure 17(a), the control unit of the imprint apparatus of embodiment 2 moves the wafer stage 82, for example, from the front side to the back side of the paper, and lowers the template 10 onto the leftmost shot SHp of the second row, bringing it close to the resist film 160 of that shot SHp.

[0158] Furthermore, with the template 10 in proximity to the resist film 160, the control unit supplies an inert gas such as helium gas downward from the underside of the template stage 81 on the side of the shot SH where the next imprint process will be performed.

[0159] 17(a), the shot SH to be subjected to the next imprint process is on the right side of the page. The control unit opens the valves 72 and 72w shown in FIG. 1 to eject inert gas from the gas hole 74w out of the four gas holes 74e, 74w, 74n, and 74s on the underside of the template stage 81.

[0160] 17(b), the control unit raises the template 10 while continuing to supply the inert gas from the gas holes 74w. As a result, when the template 10 moves above the shot SH on the right side of the page where the next imprint process will be performed, the space between the next shot SH and the template 10 becomes a high-concentration atmosphere of an inert gas such as helium gas.

[0161] FIG. 18 shows how the non-transfer process PRbr is performed on the rightmost shot SHp in the third row.

[0162] As shown in Figure 18(a), the control unit moves the wafer stage 82, for example, from the front side to the back side of the paper, and lowers the template 10 onto the shot SHp at the right end of the third row, bringing it close to the resist film 160 of that shot SHp.

[0163] Furthermore, with the template 10 in proximity to the resist film 160, the control unit supplies an inert gas such as helium gas downward from the underside of the template stage 81 on the side of the shot SH where the next imprint process will be performed.

[0164] 18(a), the shot SH to be imprinted next is on the left side of the page. The control unit opens the valves 72 and 72e shown in FIG. 1 to eject inert gas from the gas hole 74e out of the four gas holes 74e, 74w, 74n, and 74s on the underside of the template stage 81.

[0165] 18(b), the control unit raises the template 10 while continuing to supply the inert gas from the gas holes 74e. As a result, when the template 10 moves above the shot SH on the left side of the page where the next imprint process will be performed, the space between the next shot SH and the template 10 becomes a high-concentration atmosphere of an inert gas such as helium gas.

[0166] Thereafter, as shown in the plan views of FIGS. 19 to 22, the control unit repeats the same operations to proceed with the imprint process.

[0167] 19, the imprint process is performed sequentially on the multiple shots SH in the fourth row from the left end to the right end. At this time, according to the example of the first embodiment, the leftmost shot SHp, which is the first missing shot in the fourth row, is the target shot that is the target of the imprint process. Therefore, the transfer process PRin is performed on this shot SHp, as in the first embodiment.

[0168] However, even when the shots SH are arranged in this manner, it is preferable to perform the non-transfer process PRbr at a position outside the leftmost shot SHp in the fourth row. The inert gas supplied from the outer edge side of the template 10 at a position outside the shot SHp is ejected onto the outermost edge of the wafer 30 outside the shot SHp and onto the upper surface of the wafer chuck 82b (see FIG. 1) that holds the wafer 30, and is drawn into a position directly below the template 10 by the lifting operation of the template 10.

[0169] Furthermore, among the multiple shots SH in the fourth row, there is a shot SHe that has been determined to be defective. As in the first embodiment, the non-transfer process PRbr is also performed on this shot SHe.

[0170] As shown in Figure 20, when carrying out imprint processing on multiple shots SH in the fifth and sixth rows, it is preferable to perform non-transfer processing PRbr at a position outside the right-most shot SHp, which is the first missing shot in the fifth row, and at a position outside the left-most shot SHp, which is the first missing shot in the sixth row.

[0171] As shown in Figure 21, when the imprint process is carried out on multiple shots SH in the second row from the top of the wafer 30, the non-transfer process PRbr is also performed on the right-most shot SHp, which is the first missing shot in the second row from the top.

[0172] As shown in FIG. 22, when the imprint process is carried out on a plurality of shots SH at the top end of the wafer 30, the non-transfer process PRbr is also carried out on the leftmost shot SHp, which is the first missing shot at the top end.

[0173] In this way, the transfer process PRin for all shots SH that are to be subjected to the imprint process is completed. Also, the non-transfer process PRbr for the non-target shots SHe that are determined to be defective among the non-target shots on the wafer 30 is completed.

[0174] Furthermore, among the defective shots SHp that belong to the non-target shots, the non-transfer process PRbr for the first shot SHp after reversing the direction of the imprint process is completed. The processing of all other defective shots SHp that are smaller than the predetermined area is skipped.

[0175] With the above, the imprint process for the wafer 30 according to the second embodiment is completed.

[0176] (Overview) As described above, inert gas is supplied from the outer edge side of the template to prevent bubbles from being trapped in the resist film, etc. In this case, for example, the concentration of the inert gas may become unstable even in the first target shot of the imprint process after the direction of the imprint process is reversed.

[0177] To resolve such problems, it may be necessary to change the supply amount of inert gas depending on the placement position of the shot, such as the peripheral portion or the inner portion of the wafer. In addition, even if an appropriate amount of inert gas corresponding to the placement position of the shot is preset for each shot, further adjustment may be required. For example, in a method that utilizes the inert gas drawn in by template release, the appropriate amount of inert gas may vary depending on the ambient environment during the imprint process, the shot size, the overall placement of the shots on the wafer, and other factors. Thus, it takes a great deal of time and effort to determine the appropriate amount of inert gas to be supplied each time depending on changes in the ambient environment, the shot size, the overall placement of the shots, and other factors.

[0178] According to the imprint method of embodiment 2, a non-transfer process PRbr is also performed on the first shot SHp that is placed on one or the other peripheral portion of the wafer 30 and is missing a portion that is greater than a predetermined percentage compared to a normal shot SHn, after the direction of processing is reversed between one peripheral portion and the other peripheral portion.

[0179] As a result, after reversing the direction of processing between one peripheral portion and the other peripheral portion, the template 10 is released even on the front side of the shot SH that is the first to be subjected to the imprint processing, and at that time, the inert gas supplied from the outer edge side of the template 10 can be drawn into a position directly below the template 10.

[0180] Therefore, after reversing the processing direction, the shot SH that is the first to be imprinted can be subjected to the imprinting process in an atmosphere of an inert gas with an appropriate concentration, which prevents bubbles from entering the resist film 160 of this first shot SH and prevents protrusions of the resist film 160 near the shot SH, thereby preventing defects in the formation of the resist pattern 160p.

[0181] Furthermore, for the first shot SHp after the direction of processing is reversed between one peripheral portion and the other peripheral portion, the template 10 is simply brought close to the shot SHp without contacting it, which prevents the template 10 from being forcibly pressed against a shot SHp with an area that is too small, resulting in an incomplete imprint process.

[0182] [Other embodiments] In the above-described first and second embodiments, by appropriately performing the non-transfer process PRbr, it is possible to suppress the incorporation of bubbles into the resist film 160 without performing a complicated process such as adjusting the appropriate amount of inert gas for each shot SH. However, it is also possible to set the appropriate amount of inert gas for each shot in advance and then perform an imprint process including the non-transfer process PRbr. This makes it possible to further suppress the incorporation of bubbles into the resist film 160.

[0183] In the above-described first and second embodiments, the resist film 160 is applied by a coating device or the like that is different from the imprint apparatus. However, the imprint apparatus may be equipped with a film coating mechanism, and the resist film 160 may be applied within the imprint apparatus prior to the imprint process.

[0184] In the above-described first and second embodiments, the resist film 160 on the non-target shots is exposed by an exposure apparatus or the like that is different from the imprint apparatus. However, the imprint apparatus may be equipped with an exposure mechanism, and the resist film 160 may be exposed in the imprint apparatus after the imprint process.

[0185] In the above-described first and second embodiments, the control unit of the imprint apparatus acquires information about non-target shots in advance. However, the control unit of the imprint apparatus may determine non-target shots based on layout information acquired from the design apparatus 2 and inspection results acquired from the inspection apparatus 3.

[0186] In the above-described first and second embodiments, a photocurable resin, for example, is used as the material to be imprinted. However, other resins, such as a thermosetting resin, may also be used as the material to be imprinted. For example, when a thermosetting resin is used as the material to be imprinted, the imprinting apparatus may include a heat source or the like as a curing unit instead of or in addition to the light source 89 described above.

[0187] In the above-described first and second embodiments, the imprint process using the imprint apparatus is used to manufacture semiconductor devices. However, the imprint process can also be used to manufacture electronic devices such as micro electro mechanical systems (MEMS) and magnetic recording devices, and magnetic recording media.

[0188] Furthermore, the imprint process can form multiple resist patterns with different film thicknesses on a single resist film, so the imprint process can be used to form a dual damascene structure having wiring trenches and vias, a structure with staircase-like steps, and a lens-shaped structure.

[0189] Although several embodiments of the present invention have been described, these embodiments are presented as examples and are not intended to limit the scope of the invention. These novel embodiments can be embodied in various other forms, and various omissions, substitutions, and modifications can be made without departing from the spirit of the invention. These embodiments and their modifications are included within the scope and spirit of the invention, and are also included in the scope of the invention and its equivalents as defined in the claims. [Explanation of symbols]

[0190] 1...imprint apparatus, 10...template, 30...wafer, 71...supply pipe, 72...valve, 73...gas flow path, 74...gas hole, 81...template stage, 89...light source, 90...controller, 160...resist film, PRin...transfer processing, PRbr...non-transfer processing, SH, SHe, SHp...shot.

Claims

1. 1. An imprint method for processing a substrate having a plurality of shots of resin applied thereto, comprising: performing a first process on target shots that are to be subjected to imprint processing among the plurality of shots, and performing a second process on at least some of non-target shots that are not to be subjected to imprint processing among the plurality of shots; In the first process, a template is pressed against the resin, the resin is hardened, and the template is released from the resin while supplying a gas from an outer edge side of the template, thereby transferring a pattern of the template to the resin; In the second process, the template is brought close to the resin without being brought into contact with the resin, and the template is separated from the resin while supplying the gas from an outer edge side of the template. Imprinting method.

2. The second process includes: This is done for defective shots that are determined to be defective by pre-inspection. The imprint method according to claim 1 .

3. The first and second processes include: a step-and-repeat method in which a processing direction is reversed between a first peripheral portion and a second peripheral portion of the substrate, and adjacent shots among the plurality of shots are sequentially processed; The second process includes: a missing shot that is arranged in the first peripheral portion or the second peripheral portion and is missing a portion at a predetermined rate or more compared to a normal shot, and is performed on the first shot after reversing the direction of processing between the first peripheral portion and the second peripheral portion; The imprint method according to claim 1 .

4. A method of manufacturing a semiconductor device including an imprint process of a substrate having a resin applied onto a processed film of a plurality of shots, performing a first process on target shots that are to be subjected to imprint processing among the plurality of shots, and performing a second process on at least some of non-target shots that are not to be subjected to imprint processing among the plurality of shots; In the first process, a template is pressed against the resin, the resin is hardened, and the template is released from the resin while supplying a gas from an outer edge side of the template, thereby transferring a pattern of the template to the resin; In the second process, the template is brought close to the resin without being brought into contact with the resin, and the template is separated from the resin while supplying the gas from an outer edge side of the template; In the target shot, the resin to which the pattern has been transferred is used as a mask to process the film to be processed. A method for manufacturing a semiconductor device.

5. An imprint apparatus for processing a substrate on which resin has been applied in multiple shots, a stage that moves the template in a direction along and a direction intersecting the surface of the substrate; a curing unit that cures the resin; a gas supply unit that supplies gas from an outer edge side of the template; a control unit that controls the stage, the curing unit, and the gas supply unit, The control unit performing a first process on target shots that are to be subjected to imprint processing among the plurality of shots, and performing a second process on at least some of non-target shots that are not to be subjected to imprint processing among the plurality of shots; In the first process, a template is pressed against the resin, the resin is hardened, and the template is released from the resin while supplying a gas from an outer edge side of the template, thereby transferring a pattern of the template to the resin; In the second process, the template is brought close to the resin without being brought into contact with the resin, and the template is separated from the resin while supplying the gas from an outer edge side of the template. Imprinting device.

Images