Substrate processing apparatus and substrate processing method

Abstract

This substrate processing device comprises a processing container having a processing chamber therein which is depressurized to a pressure lower than the atmospheric pressure, a holding unit for holding a substrate in the processing chamber, and a nozzle for spraying gas to irradiate a first major surface of the substrate being held by the holding unit with a gas cluster. The processing container includes an opposing wall including a first opposing surface opposite the first major surface of the substrate, a plate provided in a part of the first opposing surface of the opposing wall, and a through-hole penetrating through the opposing wall and the plate. The plate has a second opposing surface opposite the first major surface of the substrate. The through-hole is a passageway for the gas, and has an exit on the second opposing surface of the plate. A first gap is formed between the opposing wall and the substrate, and a second gap is formed between the plate and the substrate, wherein the second gap is narrower than the first gap.

Description

[Technical Field]

[0001] The present disclosure relates to a substrate processing apparatus and a substrate processing method. [Background technology]

[0002] The processing method described in Patent Document 1 involves ejecting a mixed gas consisting of a reactive gas (e.g., ClF3 gas) and an additive gas (e.g., Ar gas) from a nozzle outlet into a vacuum processing chamber, generating reactive clusters through adiabatic expansion of the mixed gas, and processing the substrate surface with these reactive clusters. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Publication No. 2013-46001 Summary of the Invention [Problem to be solved by the invention]

[0004] One aspect of the present disclosure provides a technique for adjusting the flow of gas around a substrate and suppressing particle re-adhesion to the substrate. [Means for solving the problem]

[0005] A substrate processing apparatus according to one aspect of the present disclosure includes a processing vessel including a processing chamber therein that is decompressed to a pressure lower than atmospheric pressure, a holder that holds a substrate in the processing chamber, and a nozzle that injects gas to irradiate a first main surface of the substrate held by the holder with gas clusters. The processing vessel includes an opposing wall including a first opposing surface that faces the first main surface of the substrate, a plate provided on a portion of the first opposing surface of the opposing wall, and a through-hole that penetrates the opposing wall and the plate. The plate has a second opposing surface that faces the first main surface of the substrate. The through-hole is a passage for the gas and has an outlet in the second opposing surface of the plate. A first gap is formed between the opposing wall and the substrate, and a second gap is formed between the plate and the substrate, the second gap being narrower than the first gap. [Effects of the Invention]

[0006] According to one aspect of the present disclosure, the flow of gas around the substrate can be adjusted, and particle re-adhesion to the substrate can be suppressed. [Brief explanation of the drawings]

[0007] [Figure 1] FIG. 1 is a diagram showing a substrate processing apparatus according to an embodiment. [Figure 2] FIG. 2 is a diagram showing an example of movement of the holding unit in FIG. [Figure 3] FIG. 3 is an enlarged view of a part of FIG. 1, showing an example of a gas flow. [Figure 4] FIG. 4 is a diagram showing the gas flow in the substrate processing apparatus according to the reference embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0008] Hereinafter, embodiments of the present disclosure will be described with reference to the drawings. In the drawings, the same or corresponding components are denoted by the same or corresponding reference numerals, and the description thereof may be omitted.

[0009] A substrate processing apparatus 1 according to one embodiment will be described with reference to FIGS. 1 to 3. The substrate processing apparatus 1 irradiates a first main surface Wa of a substrate W with gas clusters to remove particles adhering to the first main surface Wa. The substrate W is, for example, a silicon wafer. The substrate W may also be a compound semiconductor wafer, a sapphire substrate, or a glass substrate. The substrate W has a first main surface Wa and a second main surface Wb facing opposite to the first main surface Wa. As shown in FIG. 1, the substrate processing apparatus 1 includes, for example, a processing container 2, a holding unit 3, a nozzle 5, a gas supply unit 6, a pressure reduction unit 7, a driving unit 8, and a control unit 9.

[0010] The processing vessel 2 includes a processing chamber 21 therein, which is depressurized to a pressure lower than atmospheric pressure by a decompression unit 7. The processing vessel 2 has a ceiling wall 22, a bottom wall 23, and a side wall 24. The side wall 24 is formed in a frame shape. A gate 25, which is an opening for loading and unloading the substrate W, is formed on the side wall 24. The gate 25 is opened and closed by a gate valve 26.

[0011] The holder 3 holds the substrate W in the processing chamber 21. The holder 3 holds the substrate W horizontally, for example, with a first main surface Wa of the substrate W facing upward. The first main surface Wa is the main surface onto which gas clusters are irradiated. The holder 3 holds the substrate W so that the center of the first main surface Wa coincides with the center line of a rotation shaft 82, which will be described later.

[0012] The nozzle 5 has an injection port 51 for injecting gas so as to irradiate the substrate W held by the holder 3 with gas clusters. The gas is injected in a direction perpendicular to the first main surface Wa of the substrate W, for example, downward. Because the gas clusters collide perpendicularly with the first main surface Wa, it is possible to prevent the concave-convex pattern formed beforehand on the first main surface Wa from collapsing.

[0013] 3, the nozzle 5 has, in this order from the upstream side to the downstream side (e.g., from the top to the bottom), a gas supply chamber 52, a throat 53, and a tapered hole 54. The tapered hole 54 has an injection port 51 at its downstream end. The tapered hole 54 has a diameter that increases from the upstream side to the downstream side.

[0014] After being supplied to the gas supply chamber 52, the gas is accelerated as it passes through the throat 53 and is then injected from the injection port 51. The injected CO2 gas undergoes adiabatic expansion in the pre-depressurized processing chamber 21, and is cooled to the condensation temperature. As a result, the CO2 molecules bond with each other due to van der Waals forces, and gas clusters, which are aggregates of CO2 molecules, are formed.

[0015] The gas clusters collide with particles adhering to the first main surface Wa of the substrate W and blow the particles away. The gas clusters can blow away particles around the collision position even by colliding with the first main surface Wa without directly colliding with the particles. The gas clusters become hot upon collision and are broken down into pieces, which are then exhausted from the exhaust port 231 in the bottom wall 23. The exhaust port 231 is provided, for example, at a position opposite the nozzle 5, specifically directly below the nozzle 5. The position of the exhaust port 231 is not particularly limited.

[0016] The gas supply unit 6 supplies the source gas for forming gas clusters to the nozzle 5. The source gas is sprayed from the nozzle 5 and adiabatically expanded in the pre-depressurized processing chamber 21, whereby it is cooled to a condensation temperature and forms gas clusters, which are aggregates of molecules or atoms. The source gas contains at least one gas selected from, for example, carbon dioxide (CO2) gas and argon (Ar) gas.

[0017] The gas supply unit 6 may supply a mixture of a source gas and a carrier gas to the nozzle 5. The carrier gas has a smaller molecular weight or atomic weight than the source gas. Therefore, the carrier gas has a higher condensation temperature than the source gas. Therefore, the carrier gas does not form gas clusters. The carrier gas may include at least one gas selected from hydrogen (H) gas and helium (He) gas, for example.

[0018] The carrier gas reduces the partial pressure of the source gas, thereby suppressing liquefaction of the source gas inside the nozzle 5. In addition, the carrier gas increases the gas supply pressure to the nozzle 5 to a desired pressure, thereby increasing the acceleration of the source gas and promoting the growth of gas clusters. In this embodiment, CO gas is used as the source gas and H gas is used as the carrier gas, but the combination is not particularly limited.

[0019] The size of the gas clusters can be adjusted, for example, by (A) the gas pressure in the gas supply chamber 52, (B) the flow rate ratio between the source gas and the carrier gas, and (C) the gas pressure in the processing chamber 21. If the size of the gas clusters is too small, the particle removal efficiency is too low. On the other hand, if the size of the gas clusters is too large, the concavo-convex pattern formed in advance on the first main surface Wa of the substrate W collapses.

[0020] The decompression unit 7 depressurizes the processing chamber 21 to a pressure lower than atmospheric pressure. Although not shown, the decompression unit 7 includes, for example, a suction pump that sucks gas from the processing chamber 21, a suction line that connects the exhaust port 231 in the bottom wall 23 to the suction pump, and a pressure controller provided midway along the suction line. The pressure controller adjusts the gas pressure in the processing chamber 21 under the control of the control unit 9. When irradiating the substrate W with gas clusters, the gas pressure in the processing chamber 21 is controlled to, for example, 5 Pa to 120 Pa.

[0021] 1 and 2, the drive unit 8 has a rotation drive unit 81 that rotates the holder 3. The holder 3 holds the substrate W so that the center of the first main surface Wa of the substrate W coincides with the center line of a rotation shaft 82. The rotation drive unit 81 rotates the holder 3 around the center line of the rotation shaft 82. This allows the irradiation position of the gas clusters on the first main surface Wa of the substrate W to be moved in the circumferential direction of the substrate W.

[0022] The drive unit 8 has a movement drive unit 83 that moves the holder 3. The movement drive unit 83 moves the holder 3 in a direction perpendicular to the center line of the rotation shaft 82, thereby relatively moving the nozzle 5 and the holder 3 in the radial direction of the substrate W. This allows the irradiation position of the gas clusters on the first main surface Wa of the substrate W to be moved in the radial direction of the substrate W.

[0023] The movement drive unit 83 moves the holding unit 3 in a direction perpendicular to the center line of the rotation shaft 82, for example, by rotating an arm (not shown). Note that the movement drive unit 83 may move the holding unit 3 along a guide rail instead of rotating an arm.

[0024] The rotation drive unit 81 moves the irradiation position of the gas clusters in the circumferential direction of the substrate W, and the movement drive unit 83 moves the irradiation position of the gas clusters in the radial direction of the substrate W. Thus, the entire first main surface Wa of the substrate W can be irradiated with the gas clusters.

[0025] In this embodiment, the nozzle 5 is fixed to the processing vessel 2, but may be provided movably inside the processing vessel 2. In this case, by moving the nozzle 5 instead of the holder 3, it is also possible to move the irradiation position of the gas clusters on the first main surface Wa of the substrate W in the radial direction of the substrate W.

[0026] The control unit 9 is, for example, a computer, and includes a CPU (Central Processing Unit) 91 and a storage medium 92 such as a memory. The storage medium 92 stores programs for controlling various processes executed in the substrate processing apparatus 1. The control unit 9 controls the operation of the substrate processing apparatus 1 by causing the CPU 91 to execute the programs stored in the storage medium 92.

[0027] Next, a problem with the substrate processing apparatus 1 according to the reference embodiment will be described with reference to Fig. 4. The ceiling wall 22 of the processing chamber 2 has a first opposing surface 221 facing the first main surface Wa of the substrate W. The first opposing surface 221 of the ceiling wall 22 and the first main surface Wa of the substrate W are parallel to each other and form a first gap G1. The first gap G1 is determined in consideration of the operability of loading and unloading the substrate W.

[0028] The ceiling wall 22 has a nozzle storage section 222. The nozzle storage section 222 is a space that stores the nozzle 5. The nozzle 5 has, for example, a T-shaped cross section, and the nozzle storage section 222 has, for example, a rectangular cross section. The distance between the ejection port 51 of the nozzle 5 and the first main surface Wa of the substrate W is determined in consideration of the particle removal efficiency, and is adjusted to an optimal distance.

[0029] The nozzle 5 ejects gas perpendicularly to the first main surface Wa of the substrate W. The gas changes direction when it collides with the first main surface Wa of the substrate W. The gas spreads radially along the first main surface Wa of the substrate W from the position where it collides with the substrate W (i.e., the position where the gas clusters are irradiated). When the gas flows outside the periphery of the first main surface Wa, it flows downward toward the exhaust port 231 in the bottom wall 23.

[0030] The substrate processing apparatus 1 according to the reference embodiment has the following problems (1) to (3): (1) The size of the first gap G1 is large, and in the first gap G1, not only a gas flow away from the gas cluster irradiation position but also a gas flow flowing backward toward the gas cluster irradiation position is formed (see dashed line A1 in FIG. 4). The backward gas flow prevents particles detached from the substrate W at the gas cluster irradiation position from being discharged. As a result, the particles re-adhere to the first main surface Wa of the substrate W.

[0031] (2) The size of the nozzle storage section 222 is larger than the size of the nozzle 5, and excess space exists in the nozzle storage section 222, causing gas to flow backward from the outside to the inside of the nozzle storage section 222 (see dashed line A2 in FIG. 4). The backward flow of gas prevents particles detached from the substrate W from being discharged. As a result, the particles re-adhere to the first main surface Wa of the substrate W.

[0032] (3) The presence of excess space in the processing chamber 21 creates a gas flow that rewinds toward the gas cluster irradiation position (see dashed line A3 in FIG. 4). The rewinding gas flow prevents particles that have detached from the substrate W from being discharged. As a result, the particles re-adhere to the first main surface Wa of the substrate W.

[0033] The above problem (3) also occurs when the nozzle 5 is not fixed and moves in the radial direction of the substrate W, but is more pronounced when the nozzle 5 is fixed and the holder 3 moves. This is because the size of the processing chamber 21 is set large so that the holder 3 can move.

[0034] 3, the processing vessel 2 according to this embodiment has a plate 27 provided on a part of the first opposing surface 221 of the ceiling wall 22, and a through-hole 28 penetrating the ceiling wall 22 and the plate 27. Since the plate 27 is provided on a part of the first opposing surface 221 of the ceiling wall 22, the workability of loading and unloading the substrate W is not impaired. Although not shown, the loading and unloading of the substrate W is preferably performed at a position where the entire substrate W does not overlap with the plate 27 when viewed from above (a position outside the plate 27). The plate 27 may be detachable from the ceiling wall 22.

[0035] The plate 27 has a second opposing surface 271 that faces the first main surface Wa of the substrate W. The second opposing surface 271 of the plate 27 and the first main surface Wa of the substrate W are parallel to each other and form a second gap G2. The through hole 28 is a gas passage and has an outlet 281 in the second opposing surface 271 of the plate 27. The outlet 281 of the through hole 28 faces the second gap G2. The second gap G2 is narrower than the first gap G1.

[0036] The movement driver 83 moves the holder 3 between a load / unload position and a processing position. The load / unload position is a position where the substrate W is attached to or detached from the holder 3, and is preferably a position where the entire substrate W does not overlap the plate 27 when viewed from above (a position outside the plate 27). The processing position is a position where the substrate W is irradiated with gas clusters, and where a second gap G2 is formed between at least a part of the first main surface Wa of the substrate W and the second opposing surface 271 of the plate 27.

[0037] The second gap G2 is narrow, the gas flow rate away from the gas cluster irradiation position is fast, and no gas flow occurs that flows back toward the gas cluster irradiation position. As a result, particles that have detached from the substrate W at the gas cluster irradiation position can be quickly discharged, and the particles can be prevented from re-adhering to the first main surface Wa of the substrate W. Therefore, the number of particles adhering to the substrate W can be reduced.

[0038] The size of the second gap G2 is, for example, 20 mm or less, and preferably 15 mm or less. The size of the second gap G2 is measured in a direction perpendicular to the first main surface Wa of the substrate W. If the size of the second gap G2 is 20 mm or less, the flow rate of the gas moving away from the gas cluster irradiation position is sufficiently fast. The size of the second gap G2 is preferably 1 mm or more, and more preferably 5 mm or more.

[0039] The distance D between the periphery of the second opposing surface 271 and the center of the outlet 281 of the through-hole 28 is, for example, 50 mm or more over the entire periphery of the second opposing surface 271. If the distance D is 50 mm or more, backflow of gas can be suppressed around the irradiating position of the gas cluster, and re-adhesion of particles can be suppressed.

[0040] The periphery of the second opposing surface 271 is circular in this embodiment, but may be rectangular, and the shape is not particularly limited. The distance D may be 50 mm or more. The distance D may be equal to or greater than the diameter of the substrate W (for example, 300 mm). The distance D is preferably 400 mm or less.

[0041] Plate 27 has a tapered surface 272 on its periphery that approaches first opposing surface 221 of ceiling wall 22 the further away from the center line of through-hole 28. Tapered surface 272 is inclined with respect to first opposing surface 221, and gradually widens the gas flow from second gap G2 to first gap G1. Continuously changing the width of the gas flow can suppress turbulence in the gas flow.

[0042] 3, the ceiling wall 22 of the processing vessel 2 according to this embodiment has a cylindrical body 223 that fills a part of the space of the nozzle storage section 222. The cylindrical body 223 prevents gas from flowing back from the outside to the inside of the nozzle storage section 222, thereby preventing particles from re-adhering.

[0043] The cylindrical body 223 fills a part of the space in the nozzle storage part 222, thereby adjusting the flow of gas from the nozzle 5 to the substrate W, suppressing the spread of the gas flow, and increasing the flow rate of the gas from the nozzle 5 to the substrate W. This makes it possible to efficiently generate gas clusters and increase the efficiency of particle removal.

[0044] Nozzle 5 has a T-shaped cross section and includes a shaft portion 55 and a flange portion 56 that is larger than shaft portion 55. Shaft portion 55 is provided, for example, vertically. Flange portion 56 is provided horizontally at the upper end of shaft portion 55. Gas supply chamber 52 is formed on the upper surface of flange portion 56, and injection port 51 is formed on the lower surface of shaft portion 55.

[0045] The cylindrical body 223 surrounds the shaft portion 55. The cylindrical body 223 is formed with, for example, a straight hole 282 into which the shaft portion 55 of the nozzle 5 is inserted, and a first tapered hole 283 that widens from the straight hole 282 toward the substrate W.

[0046] The cylindrical body 223 is in contact with the plate 27. A second tapered hole 284 is formed in the plate 27, widening from the first tapered hole 283 toward the substrate W. The second tapered hole 284 is formed continuously from the first tapered hole 283. The outlet 281 of the through hole 28 is formed at the downstream end of the second tapered hole 284.

[0047] The through hole 28 has, from the upstream side to the downstream side, a straight hole 282, a first tapered hole 283, and a second tapered hole 284, in this order. The first tapered hole 283 and the second tapered hole 284 have a shape that extends the tapered hole 54 of the nozzle 5 toward the downstream side, and suppress the expansion of the gas flow and the backflow of gas.

[0048] To solve the problem (3) above, the substrate processing apparatus 1 according to this embodiment includes a rectifying ring 4 that surrounds the periphery of the substrate W held by the holder 3 and regulates the flow of gas at the periphery of the substrate W. The rectifying ring 4 can block the flow of gas that flows back toward the periphery of the substrate W, thereby suppressing redeposition of particles.

[0049] The rectification ring 4 protrudes further than the first main surface Wa of the substrate W toward the first opposing surface 221 of the ceiling wall 22 and the second opposing surface 271 of the plate 27. A third gap G3 is formed between the tip (e.g., upper end) of the rectification ring 4 and the second opposing surface 271 of the plate 27. The third gap G3 is narrower than the second gap G2.

[0050] The third gap G3 is narrow, and the gas flow velocity from the periphery of the substrate W toward the radially outer side of the substrate W along the second opposing surface 271 of the plate 27 is high, and no gas flow is generated that rolls back toward the periphery of the substrate W. This makes it possible to suppress particle re-adhesion. The third gap G3 may be variable. Specifically, the rectifying ring 4 may be movable relative to the holder 3 in a direction perpendicular to the first main surface Wa of the substrate W (for example, a vertical direction).

[0051] The rectifier ring 4 forms, for example, two gas flows near the periphery of the substrate W. One flow is parallel to the second opposing surface 271 of the plate 27 and flows from the periphery of the substrate W toward the outside in the radial direction of the substrate W. The other flow is perpendicular to the second opposing surface 271 of the plate 27 and flows through a gap formed between the periphery of the substrate W and the rectifier ring 4 (for example, a downward flow).

[0052] 1 and 2, the rectifying ring 4 has, for example, a vertical portion 41 that is perpendicular to the first main surface Wa of the substrate W, and an inclined portion 42 that is inclined with respect to the first main surface Wa of the substrate W. The inclined portion 42 becomes farther away from the first opposing surface 221 of the ceiling wall 22 and the second opposing surface 271 of the plate 27 as it moves radially outward from the substrate W. The inclined portion 42 can smoothly change the direction of a portion of the gas flow along the second opposing surface 271 of the plate 27 into a gas flow that flows away from the second opposing surface 271 of the plate 27.

[0053] The rotation drive unit 81 may rotate the rectifier ring 4 together with the holder 3. The substrate W and the rectifier ring 4 held by the holder 3 can be rotated in the same direction at the same rotation speed. This reduces the relative speed difference between the substrate W and the rectifier ring 4, and suppresses the rebound of particles that collide with the rectifier ring 4. After colliding with the rectifier ring 4, the particles flow along the vertical portion 41 of the rectifier ring 4.

[0054] In this embodiment, the plate 27, the cylindrical body 223, and the rectifying ring 4 are used to solve the three problems (1) to (3) above, but it is sufficient to solve one or more of the problems (1) to (3) above, and it is sufficient to use one or more selected from the plate 27, the cylindrical body 223, and the rectifying ring 4.

[0055] In this embodiment, the holding portion 3 holds the substrate W horizontally with the first main surface Wa of the substrate W facing upward, so the ceiling wall 22 is the opposing wall facing the first main surface Wa of the substrate W, and the nozzle 5 is positioned above the substrate W, but the technology disclosed herein is not limited to this.

[0056] For example, the holding portion 3 may hold the substrate W vertically with the first main surface Wa of the substrate W facing sideways, the side wall 24 may be an opposing wall facing the first main surface Wa of the substrate W, and the nozzle 5 may be positioned to the side of the substrate W.

[0057] In addition, the holding portion 3 may hold the substrate W horizontally with the first main surface Wa of the substrate W facing downward, the bottom wall 23 may be an opposing wall facing the first main surface Wa of the substrate W, and the nozzle 5 may be positioned below the substrate W.

[0058] Although the embodiments of the substrate processing apparatus and substrate processing method according to the present disclosure have been described above, the present disclosure is not limited to the above embodiments. Various changes, modifications, substitutions, additions, deletions, and combinations are possible within the scope of the claims. These naturally fall within the technical scope of the present disclosure.

[0059] This application claims priority based on Patent Application No. 2021-148495 filed with the Japan Patent Office on September 13, 2021, and the entire contents of Patent Application No. 2021-148495 are incorporated herein by reference. [Explanation of symbols]

[0060] 1. Substrate processing equipment 2. Processing vessel 21 Processing Room 22 Ceiling wall (opposite wall) 221 First opposing surface 27 Plate 28 through holes 3 Holding part 5 nozzles W substrate Wa First principal surface

Claims

1. a processing vessel including a processing chamber therein that is decompressed to a pressure lower than atmospheric pressure; a holder that holds a substrate in the processing chamber; and a nozzle that injects gas to irradiate a first main surface of the substrate held by the holder with gas clusters; the processing vessel includes an opposing wall including a first opposing surface opposing the first main surface of the substrate, a plate provided on a part of the first opposing surface of the opposing wall, and a through-hole penetrating the opposing wall and the plate, a substrate processing apparatus, wherein the plate has a second opposing surface facing the first main surface of the substrate, the through hole is a passage for the gas and has an outlet on the second opposing surface of the plate, a first gap is formed between the opposing wall and the substrate, and a second gap is formed between the plate and the substrate, the second gap being narrower than the first gap.

2. The substrate processing apparatus according to claim 1 , wherein the second gap has a size of 20 mm or less.

3. 3 . The substrate processing apparatus according to claim 1 , wherein a distance between a periphery of the second opposing surface and a center of the outlet of the through hole is 50 mm or more over the entire periphery of the second opposing surface.

4. The substrate processing apparatus according to claim 1 , wherein the plate has a tapered surface on its periphery that approaches the first opposing surface of the opposing wall as it moves away from the center line of the through hole.

5. The nozzle has a tapered hole that widens from the upstream side toward the downstream side, The substrate processing apparatus according to claim 1 , wherein the through-hole has a tapered hole shaped such that the tapered hole of the nozzle is extended downstream.

6. The substrate processing apparatus according to claim 1 , further comprising a drive unit that rotates the holder.

7. 3 . The substrate processing apparatus according to claim 1 , further comprising a flow rectifying ring that surrounds the periphery of the substrate held by the holder and regulates the flow of the gas at the periphery of the substrate.

8. The substrate processing apparatus according to claim 7 , wherein a third gap is formed between the rectifying ring and the plate, and the third gap is narrower than the second gap.

9. The substrate processing apparatus according to claim 7 , further comprising a drive unit that rotates the rectifying ring together with the holder.

10. a processing vessel including a processing chamber therein that is decompressed to a pressure lower than atmospheric pressure; a holder for holding a substrate in the processing chamber; a nozzle that injects gas to irradiate the first main surface of the substrate held by the holding unit with gas clusters; a rectifying ring that surrounds the periphery of the substrate held by the holder and regulates the flow of the gas at the periphery of the substrate; A substrate processing apparatus comprising:

11. the processing vessel has an opposing wall including a first opposing surface facing the substrate held by the holder, The substrate processing apparatus according to claim 10 , wherein the rectifying ring protrudes further toward the first opposing surface of the opposing wall than the first main surface of the substrate.

12. The substrate processing apparatus according to claim 10 , further comprising a drive unit that rotates the rectifying ring together with the holder.

13. 12. A substrate processing method, comprising: irradiating the substrate with the gas clusters using the substrate processing apparatus according to claim 1.

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