Optical element, optical device, and method for manufacturing an optical element, particularly for reflecting EUV radiation

Abstract

The present invention relates to a reflective optical element (17), in particular for reflecting EUV radiation (16), comprising a substrate (25) and a reflective coating (26) deposited on the substrate (25). In one embodiment of the invention, the substrate (25) is doped with at least one noble metal (27) within its volume (V). In yet another embodiment of the invention, the reflective coating (26) and / or a structural layer (28) formed between the substrate (25) and the reflective coating (26) are doped with at least one noble metal (27). The present invention also relates to an optical device, preferably a projection exposure device for microlithography, in particular for EUV lithography, comprising at least one such reflective optical element (17), as well as to a method for manufacturing such a reflective optical element (17).

Description

[Technical Field]

[0001] [Reference to Related Applications] This application claims priority from German Patent Application No. 10 2020 213 639.4 filed on October 29, 2020, the entire disclosure of which is incorporated herein by reference.

[0002] The present invention relates to a reflective optical element, in particular for reflecting EUV radiation, comprising a substrate and a reflective coating deposited on the substrate. The method also relates to an optical apparatus, preferably for microlithography, in particular for EUV lithography, for example in the form of a projection exposure apparatus, comprising at least one such reflective optical element. The present invention also relates to a method for producing a reflective optical element, comprising the steps of providing a substrate and depositing a reflective coating on the substrate, preferably depositing a structurable layer on the substrate before depositing the reflective coating and structuring it after deposition. [Background technology]

[0003] The optical device can be, for example, an optical device for EUV lithography, i.e. an optical system which can be used in the field of EUV lithography. As well as projection exposure apparatus for EUV lithography which are useful for the production of semiconductor components, the optical device can be, for example, an inspection system for inspecting photomasks (hereinafter also referred to as reticles) which are used in such projection exposure apparatus, for inspecting semiconductor substrates (hereinafter also referred to as wafers) to be structured, or a metrology system which is used for measuring projection exposure apparatus for EUV lithography or parts thereof, for example for measuring a projection optical unit.

[0004] EUV lithography or metrology systems and their associated components operate in a vacuum containing a low partial pressure of hydrogen. The hydrogen continuously cleans optical surfaces. During operation, molecular hydrogen is excited by the generated EUV light, resulting in the formation of hydrogen radicals (H*) and hydrogen ions (H+). The interaction of these hydrogen species with the exposed surfaces of reflective optical elements (EUV mirrors), for example, made of silicon-containing materials (monocrystalline / polycrystalline or amorphous silicon, fused silica, silicon nitride, silicon carbide, particularly silicon-impregnated silicon carbide composites (SiSiC), magnesium aluminum silicate ceramics such as cordierite ceramics, glass, or glass-ceramics with very low thermal expansion, e.g., ULE®, Zerodur®, Clearceram®, etc.), generates volatile hydrides, particularly silanes, also known as HIO ("hydrogen-induced outgassing"). Further deposition of volatile hydrides on optical surfaces can lead to degradation of optical components.

[0005] The literature discloses various techniques that can prevent or reduce the formation of volatile hydrides.

[0006] Patent document 1 proposes at least partially covering components of an EUV lithography apparatus exposed to a hydrogen-containing atmosphere with a protective layer of a noble metal (e.g., from the group of rhodium, ruthenium, iridium, palladium, and platinum). The minimum thickness of the protective layer should be selected so that it is not permeable to hydrogen ions and / or hydrogen radicals.

[0007] Patent Document 2 discloses an optical element in which a shield, which provides protection from the etching effects of ambient hydrogen plasma, is attached to at least one surface region of the body, separated by a gap. The distance between the shield and the surface region is less than twice the Debye length of the ambient plasma. The shield can be applied indirectly or directly to the body. The shield can be made of a hydrogen recombination material (e.g., Ir, Ru, Pt, Pd) or can have a coating of a hydrogen recombination material. The gap can be partially or completely filled with a filler material (e.g., aluminum oxide, zirconium nitride, yttrium oxide, cerium oxide, zirconium oxide, niobium oxide, titanium oxide, tantalum oxide, tungsten oxide, metals, preferably noble metals, in particular Ru, Rh, Pd, Ir, Pt, Au, and compositions thereof). In yet another embodiment, the shield can be in the form of a coating.

[0008] Patent Document 3 discloses an optical element that reflects EUV radiation, which has a top layer of a hydrogen desorption material (e.g., Pd, Ag, Au, and alloys thereof) with a hydrogen desorption temperature of less than 340 K. To achieve the desired effect of releasing hydrogen, the top layer does not necessarily have to form a continuous layer. Material accumulation of the hydrogen desorption material in the form of clusters or islands can also achieve this purpose if the distance between them is sufficiently small.

[0009] Patent Document 4 discloses an EUV mirror exposed to a hydrogen plasma during operation, the body of which includes at least one material that forms at least one volatile hydride upon contact of the surface region with activated hydrogen (H+, H*). To prevent the formation of volatile hydrides, noble metal ions (e.g., Rh, Ru, Ir, Au, Pd, Pt) are implanted into the surface region of the body. The implantation of noble metal ions into the subsurface, near-surface volume region significantly reduces the formation of volatile hydrides. This exploits the fact that noble metal ions generally have a strong catalytic effect on the recombination of activated hydrogen, i.e., hydrogen radicals and / or hydrogen ions, to form atomic hydrogen. In contrast to the aforementioned solutions, the implantation of noble metal ions only dopes the body, without forming a layer.

[0010] However, if the reflective optical element is a structured optical unit, implanting noble metal ions into the volumetric region near the surface of the body only provides limited protection. In such optical units, a structurable layer, for example, of amorphous silicon, is deposited on the substrate to form a structuring, for example, in the form of a lattice structure. Lattice structures can be formed, for example, on an EUV collector mirror to serve as a spectral filter. Since completely uniform deposition of a structured surface is very difficult (layers often have pores, channels, or other defects or irregularities at their sharp edges), such structured layers, as well as the silicon layer of a reflective multilayer Mo-Si layer or coating, are subject to etching attack by reactive hydrogen species.

[0011] Patent document 5 discloses a mirror for an illumination optical unit of a projection exposure apparatus, which is provided with a spectral filter in the form of a grating structure. The grating structure can be completely covered by a continuous protective layer in the form of a reflective coating having a plurality of Si-Mo bilayers. The low edge steepness of the grating structure can improve the coverage of the grating structure with the protective layer, thus increasing the hydrogen stability of the reflective optical element.

[0012] To achieve complete coverage of the grating structure even with relatively high edge steepness, reflective multilayer coatings can be deposited as conformal coatings, as described in US Pat. No. 6,449,393, in which a conformal or isotropic coating process in the form of atomic layer deposition is proposed to achieve essentially constant layer thickness even along a three-dimensional profile. However, depositing reflective multilayer coatings by atomic layer deposition, which may have more than 50 bilayers of Mo and Si, is very complicated.

[0013] Patent document 7 describes an optical element with a protective layer system having a first layer, a second layer, and a third layer. Metal particles and / or ions can be implanted into at least one layer of the protective layer system. The ions can be noble metal ions, for example noble metal ions, in particular platinum group metal ions. At least one layer of the protective layer system can be doped with metal (nano)particles, for example with (foreign) atoms in the form of noble metal particles (e.g., Pd, Pt, Rh, Ir). The noble metal ions or foreign atoms can act as a hydrogen and / or oxygen barrier.

[0014] All of the above mentioned methods are intended for large-area processing of three-dimensional objects with complex shapes, which entails a considerable degree of complexity. [Prior art documents] [Patent documents]

[0015] [Patent Document 1] German Patent Application Publication No. 102015215014 [Patent Document 2] International Publication No. 2019 / 025162 [Patent Document 3] German Patent Application Publication No. 102017222690 [Patent Document 4] International Publication No. 2019 / 179861 [Patent Document 5] International Publication No. 2020 / 109225 [Patent Document 6] International Publication No. 2013 / 113537 [Patent Document 7] German Patent Application No. 10 2019 212 910.2 Summary of the Invention [Problem to be solved by the invention]

[0016] The object of the present invention is to identify reflective optical elements, optical devices and methods for manufacturing optical elements that can be implemented with low complexity and that provide protection from reactive species, in particular reactive hydrogen species. [Means for solving the problem]

[0017] This object is achieved in a first aspect by an optical element of the aforementioned type, doped with at least one noble metal within the volume of the substrate.

[0018] The inventors have realised that doping of the substrate material with hydrogen recombination material in the form of a noble metal can be done much more efficiently during the substrate manufacturing process than by subsequent implantation of noble metal ions into a volume region near the surface as described in the above-mentioned Patent Document 4.

[0019] In contrast to the body described in WO 2007 / 024990, the doping with noble metal in the case of the reflective optical element of the present invention is not limited to a volumetric region near the surface with an implantation depth of less than 1000 nm. Instead, the substrate is doped with noble metal both in volume, i.e., in a volumetric region at a distance of more than 1000 nm from the surface of the substrate, e.g., more than 1 mm, more than 2 mm, more than 5 mm, etc. In particular, the substrate may be doped with noble metal throughout its volume.

[0020] In one embodiment, the substrate is made of glass or glass-ceramic with very low thermal expansion, such as titanium-doped fused silica (ULE®), Zerodur®, Clearceram®, etc., ceramic, such as silicon nitride ceramic, silicon carbide ceramic, silicon carbonitride ceramic, magnesium aluminum silicate ceramic, in particular cordierite ceramic, or composite material, in particular silicon-impregnated silicon carbide composite (SiSiC). In principle, it is also possible to dope any of the substrate materials used in EUV lithography with noble metals.

[0021] The substrate is preferably made of silicon, in particular monocrystalline, pseudo-monocrystalline or polycrystalline silicon, or possibly amorphous silicon. Silicon doped with noble metals in the form of gold (see the article "Properties of Gold-Doped Silicon", C.B. Collins et al., Phys. Rev. 105 (1957) 1168-1173) or platinum is commercially available and can therefore be used to manufacture substrates for reflective optical elements. Monocrystalline silicon saturated with gold or platinum is used, for example, in microwave technology as windows for high-power generators (see the article "Radiation effects on dielectric losses of Au-doped silicon", J. Molla et al., Journal of Nuclear Materials, 258-263 (1998) 1884-1888) or in radiation detectors (see the article "Gold and Platinum Doped Radiation-Resistant Silicon Diode Detectors", R.L. Dixon et al., Radiation Protection Dosimetry 17 (1986) 527-530).

[0022] Single-crystal silicon is also a common material for the production of substrates for x-ray, EUV, and synchrotron optics, and polishing techniques for this purpose are well established. Useful methods for producing single-crystal silicon include any conventional method, such as the Czochralski method (see "Ein neues Verfahren zur Messung der Kristallisationsgeschwindigkeit der Metalle" [A New Method for Measuring the Crystallization Rate of Metals], J. Czochralski, Zeitschrift fur physikalische Chemie, 92 (1918) 219-221) or the Bridgman-Stockberger method (see "Certain Physical Properties of Single Crystals of Tungsten, Antimony, Bismuth, Tellurium, Cadmium, Zinc, and Tin", P.W. Bridgeman, Proceedings of the American Academy of Arts and Sciences 60 (1925) 305-383). These methods are also suitable for producing single crystal silicon saturated with gold or platinum.

[0023] For particularly large crystals, Schott Solar AG has developed a method for producing pseudo-monocrystalline silicon based on the vertical gradient freeze (VGF) method (DE 102012110147, DE 102012102597). This method, or VGF method, is suitable for producing pseudo-monocrystalline silicon saturated with gold or platinum.

[0024] A further aspect of the invention relates to a reflective optical element of the aforementioned type that can be particularly combined with the reflective optical element of the first aspect of the invention, comprising a structured layer formed between the substrate and the reflective coating and preferably forming or having a grating structure, the structured layer being doped with (at least) one noble metal.

[0025] As mentioned above, the reflective coating can form a protective layer for the structural layer, which prevents or at least limits the etching attack of reactive hydrogen species and thus the outgassing of volatile hydrides. However, if the flanks of the lattice structure have excessive flank steepness, e.g., greater than 60°, the structural layer will generally not be completely covered by the reflective coating unless it is deposited by a complex isotropic coating method, e.g., by atomic layer deposition.

[0026] However, the structural layer, which may be made of, for example, amorphous silicon (see patent document 5), can be doped with a noble metal that acts as a hydrogen recombination material to protect the structural layer from hydrogen attack. As will be explained in more detail below, in order to provide the doping with a noble metal, it is possible to use a sputtering target doped with a noble metal when depositing the structural or structurable layer by sputter deposition.

[0027] Yet another aspect of the invention relates to a reflective optical element of the type described above, which can in particular be combined with a reflective optical element in the first and / or second aspect, and in which at least one silicon layer of the reflective coating, in particular the reflective Mo—Si coating, is doped with a noble metal.

[0028] Particularly when a reflective coating is applied to a structured layer, or when the reflective coating itself is structured, for example to form a grating structure, under-etching of individual layers of the reflective coating is possible, as shown for example in the paper "Multilayer EUV optics with integrated IR suppression gratings", T. Feigl et al., Proceedings of the 2016 EUVL Workshop (P69), Berkeley, June 13-16, 2016. Under-etching in this case usually occurs on the lateral side of the (structured) reflective coating, usually in the individual layers of the reflective coating, which are particularly susceptible to etching attack.

[0029] In one development, the structural layer and / or the reflective coating comprises silicon doped with a noble metal. As mentioned above, the material of the structural layer can be, for example, amorphous silicon, which can be structured relatively simply. If the reflective coating is a multilayer coating, such as that used for reflecting EUV radiation at normal incidence angles (less than 45°), it can have alternating layers (bilayers) of Mo and Si, depending on the operating wavelength for which the reflective coating is designed. As mentioned above, silicon can form volatile silanes when in contact with hydrogen. The formation of silanes can be prevented or at least reduced by doping the Si layer of the reflective Mo-Si coating with a noble metal. If a noble-metal-doped sputtering target is used in the sputtering deposition, the reflective coating, and more specifically the individual layers of the reflective coating, can already be doped with a noble metal during deposition (see below).

[0030] When silicon is doped with a noble metal, the doping can achieve improved HIO and radiation hardness without much effort, since the dopant concentrations preferably used (see below) are not expected to significantly increase the absorption of the doped silicon.

[0031] In yet another embodiment, the reflective coating forms a multi-layer coating that reflects EUV radiation. Such a multi-layer coating typically has multiple alternating layers of materials with a high real part of the refractive index at the operating wavelength and a low real part of the refractive index at the operating wavelength. Materials such as silicon and molybdenum are possible, although other material combinations are possible depending on the operating wavelength.

[0032] In yet another embodiment, the noble metal is selected from the group consisting of Ru, Rh, Pd, Ag, Os, Ir, Pt, Au, and combinations or alloys thereof. As mentioned above, noble metals generally have a strong catalytic effect on the recombination of activated hydrogen, i.e., hydrogen radicals and / or hydrogen ions, to form atomic hydrogen. As also mentioned above, Pt- or Au-doped silicon is commercially available and may be used in particular. However, it will be apparent that other materials forming or present in the volume of the substrate, structural layer, and / or reflective coating may also be doped with noble metals.

[0033] In yet another embodiment, the concentration of the noble metal dopant in the volume of the substrate, the structural layer, and / or the reflective coating is 10 10 cm -3 ~10 20 cm -3 , preferably 10 12 cm -3 ~10 16 cm -3 The dopant concentrations described make it possible to dope the structural layer of the reflective coating with a noble metal, for example Au or Pt, without significantly increasing the absorption of EUV radiation. The above range of values ​​for the dopant concentration has also been found to be advantageous for doping the substrate.

[0034] In yet another embodiment, the reflective optical element takes the form of a collector mirror for an illumination optical unit of a projection exposure apparatus. Such a collector mirror may have, for example, one or more ellipsoidal and / or hyperbolic reflective surfaces corresponding to the surfaces with the reflective coating. The illumination radiation may be incident on the reflective surface of the collector mirror at grazing incidence (GI), i.e., at an angle of incidence greater than 45°, or at normal incidence (NI), i.e., at an angle of incidence smaller than 45°.

[0035] The collector mirror typically has a structured layer in the form of a grating structure that acts as a spectral filter to suppress extraneous light, i.e. radiation with wavelengths outside the EUV wavelength range, for example in the infrared wavelength range. It will be clear that the reflective optical element does not necessarily have to take the form of a collector mirror, but may also be any other reflective optical element.

[0036] Another aspect of the invention relates to an optical apparatus, preferably a projection exposure apparatus for microlithography, in particular for EUV lithography, comprising at least one reflective optical element as described above. Such a projection exposure apparatus comprises an illumination optical system for transmitting illumination radiation from a radiation source to a reticle containing structures to be imaged, and a projection optical unit for imaging the structures of the reticle onto a wafer. The reflective optical element may be arranged in the illumination optical system, but may also be arranged in the projection optical system.

[0037] As mentioned above, in such projection exposure apparatuses, reflective optical elements are placed in a vacuum environment with added hydrogen at a low partial pressure. During operation of the projection exposure apparatus, reactive hydrogen species are generated by interaction with EUV radiation. By doping the substrate, the structural layer and / or the reflective coating with a noble metal, it is possible to improve both the HIO resistance and the radiation resistance of the substrate, the structural layer and / or the reflective coating at low cost and without inconvenience.

[0038] Yet another aspect of the invention relates to a method of the aforementioned type for depositing a reflective coating and / or a structurable layer by sputter deposition, in which a noble metal-doped sputtering target, preferably comprising silicon, is used in the sputter deposition.

[0039] In sputtering deposition, a solid material (the sputtering target) is bombarded with high-energy ions. This causes particles or atoms to be dissociated from the sputtering target, converted into a gas phase, and deposited on the object to be coated (the substrate). Sputtering deposition is typically performed in a high-vacuum process chamber so that the atoms dissociated from the sputtering target reach the substrate. The high-energy ions can be, for example, noble gas ions, particularly argon ions. There are several types of sputtering deposition.

[0040] In DC voltage sputtering deposition, a DC voltage is applied between the sputtering target and the substrate to generate a plasma that accelerates positively charged noble gas ions toward the sputtering target (cathode) and negatively charged particles ejected from the sputtering target toward the substrate (anode). In magnetron sputtering, a magnetic field is superimposed on the electric field to increase the ionization rate. Further types of sputtering deposition that are also possible are, for example, HF sputtering, reactive sputtering, ion beam sputtering, or atomic beam sputtering.

[0041] As mentioned above, sputtering targets for the sputtering deposition of the layer to be structured or of the reflective coating can be doped with noble metals. For this purpose, it is possible to produce sputtering targets of silicon doped with gold or platinum and use them for the sputtering deposition of the structurable layer or the reflective coating. Here, it is possible to take advantage of the fact that silicon doped with gold or platinum is commercially available. However, it will be clear that sputtering targets can also be doped with other noble metals.

[0042] Yet another aspect of the invention relates to a method of the aforementioned type, which can in particular be combined with the above-mentioned method, in which a substrate prepared for subsequent coating is doped in its volume with at least one noble metal, in which case the substrate is already doped with at least one noble metal during its manufacture, and the doped substrate is ready for coating.

[0043] In this embodiment, the reflective coating and possibly the coating with the structurable layer can be, but is not necessarily, performed using sputtering targets doped with noble metals, and in particular, if the reflective optical element does not have a structured or structurable layer, a conventional reflective coating that is not doped with noble metals can be deposited on the substrate.

[0044] It will be apparent that the reflective optical elements need not necessarily be designed to reflect radiation in the EUV wavelength range, but may be designed to reflect radiation in other wavelength ranges, for example to reflect radiation in the VUV wavelength range.

[0045] Further features and advantages of the invention will become apparent from the following description of exemplary embodiments of the invention, with reference to the figures of the drawing which show the details essential to the invention, and from the claims. Each of the individual features can be implemented alone or in any combination of several in a variant of the invention.

[0046] Examples are shown in the schematic drawings and explained in the following description. [Brief explanation of the drawings]

[0047] [Figure 1] 1 is a schematic meridional section of a projection exposure apparatus for EUV lithography; [Figure 2] 2 is a schematic diagram of a reflective optical element of the projection exposure apparatus of FIG. 1 with a substrate doped with a noble metal; [Figure 3] 3 is a schematic diagram similar to FIG. 2, in which the reflective optical element has a structural layer doped with a noble metal. [Figure 4] FIG. 1 is a schematic diagram of a sputtering deposition system having a noble metal doped sputtering target. DETAILED DESCRIPTION OF THE INVENTION

[0048] In the following description of the drawings, the same reference numerals are used for components that are the same or have the same function.

[0049] The essential components of a microlithographic projection exposure apparatus 1 are described below by way of example with reference to Figure 1. The description here of the basic construction of the projection exposure apparatus 1 and its components should not be considered limiting.

[0050] The illumination system 2 of the projection exposure apparatus 1 comprises not only a radiation source 3 but also an illumination optical unit 4 for illuminating an object field 5 in an object plane 6. What is exposed here is a reticle 7 that is arranged in the object field 5. The reticle 7 is held by a reticle holder 8. The reticle holder 8 is displaceable, in particular in the scanning direction, by a reticle displacement drive 9.

[0051] For purposes of illustration, a Cartesian xyz coordinate system is shown in Figure 1. The x direction extends perpendicular to the plane of the drawing. The y direction extends horizontally and the z direction extends vertically. The scanning direction extends in the y direction in Figure 1. The z direction extends perpendicular to the object plane 6.

[0052] The projection exposure apparatus 1 comprises a projection optical unit 10, which serves to image the object field 5 into an image field 11 in an image plane 12. Structures on a reticle 7 are imaged onto a photosensitive layer of a wafer 13, which is arranged in the region of the image field 11 in the image plane 12. The wafer 13 is held by a wafer holder 14, which is displaceable, in particular in the y-direction, by a wafer displacement drive 15. The displacement of the reticle 7 by the reticle displacement drive 9, on the one hand, and the displacement of the wafer 13 by the wafer displacement drive 15, on the other hand, can be synchronized with one another.

[0053] The radiation source 3 is an EUV radiation source. The radiation source 3 in particular emits EUV radiation 16, which is also referred to below as working radiation or illumination radiation. In particular, the working radiation has a wavelength in the range of 5 nm to 30 nm. The radiation source 3 may be a plasma source, for example an LPP ("laser produced plasma") source or a GDPP ("gas discharge plasma") source. It may also be a synchrotron-based radiation source. The radiation source 3 may be a free electron laser (FEL).

[0054] The illumination radiation 16 emerging from the radiation source 3 is focused by a collector mirror 17. The collector mirror 17 may be a collector mirror with one or more ellipsoidal and / or hyperbolic reflecting surfaces. The illumination radiation 16 may be incident on at least one reflecting surface of the collector mirror 17 at grazing incidence (GI), i.e. at an angle of incidence greater than 45°, or at normal incidence (NI), i.e. at an angle of incidence smaller than 45°. The collector mirror 17 may be structured and / or coated, firstly to optimize its reflectivity for the radiation used and secondly to suppress extraneous light.

[0055] The illumination radiation 16 propagates through an intermediate focus in an intermediate focal plane 18 downstream of the collector mirror 17. The intermediate focal plane 18 may separate between the radiation source module comprising the radiation source 3 and the collector mirror 17 and the illumination optics unit 4.

[0056] The illumination optical unit 4 comprises a deflection mirror 19 and a first facet mirror 20 arranged downstream thereof in the beam path. The first facet mirror 20 comprises a plurality of individual first facets 21, also referred to as field facets in the following. Figure 1 shows only some of said facets 21 by way of example. A second facet mirror 22 is arranged in the beam path of the illumination optical unit 4 downstream from the first facet mirror 20. The second facet mirror 22 comprises a plurality of second facets 23.

[0057] The illumination optical unit 4 consequently forms a double-facet system. This basic principle is also called a fly's eye integrator. By means of a second facet mirror 22, the individual first facets 21 are imaged into the object field 5. The second facet mirror 22 is the last beam-shaping mirror in the beam path upstream of the object field 5 or indeed also the final mirror for the illumination radiation 16.

[0058] The projection optical unit 10 comprises a number of mirrors Mi, which are numbered consecutively according to their location in the beam path of the projection exposure apparatus 1 .

[0059] 1, the projection optical unit 10 includes six mirrors M1 to M6. 4, 8, 10, 12 or any other number of mirrors Mi are equally possible. The penultimate mirror M5 and the final mirror M6 each have a passage aperture for the illumination radiation 16. The projection optical unit 10 is a double-shielded optical unit. The projection optical unit 10 has an image-side numerical aperture that is greater than 0.5, may be greater than 0.6, and may be, for example, 0.7 or 0.75.

[0060] Like the mirrors of the illumination optical unit 4 , the mirrors Mi may have a highly reflective coating for the illumination radiation 16 .

[0061] 2 shows a deflection mirror 19 of the illumination optics 4, which has a substrate 25 of monocrystalline silicon on which a reflective coating 26 is deposited that reflects the illumination radiation 16. The deflection mirror 19 is exposed to reactive hydrogen species in the form of hydrogen ions (H+) and hydrogen radicals (H*). The reactive hydrogen species H+, H* can react with the silicon material of the substrate 25 on exposed, e.g., lateral, surfaces 25a of the substrate 25 to form volatile hydrides, e.g., in the form of silanes. The volatile hydrides can further deposit on the optical surface, leading to its degradation.

[0062] To suppress the formation of volatile hydrides, the substrate 25 of the example deflection mirror 19 shown in Figure 2 is doped with a noble metal 27, more specifically gold, throughout its volume V. The noble metal 27 in the form of gold atoms implanted into the silicon substrate 25 acts as a hydrogen recombination material, effectively reacting reactive hydrogen species H+, H* to form molecular hydrogen, thus suppressing the formation of volatile hydrides.

[0063] The doping of the substrate 25 with gold atoms takes place during the production of the monocrystalline silicon substrate 25, which is pulled out of the melt during its production (Czochralski process). The melt material from which the substrate 25 was pulled was doped with a noble metal 27 in this case. It is equally possible to produce a monocrystalline silicon substrate 25 doped with a noble metal 27 by other methods, for example by the Bridgman-Stockbacher process. It is also possible to produce a pseudo-monocrystalline silicon substrate 25 or a polycrystalline silicon substrate doped with a noble metal, for example with gold.

[0064] It is also possible to dope the silicon substrate 25 with other noble metals, such as Ru, Rh, Pd, Ag, Os, Ir, Pt, and combinations or alloys thereof. Doping the silicon substrate 25 with Au or Pt has proven advantageous since materials of this type are already commercially available. However, it is of course also possible to dope the silicon substrate 25 with at least one noble metal other than Au or Pt.

[0065] The doping of the substrate 25 with a noble metal as described above can also be carried out with other substrate materials suitable for the production of reflective optical elements for EUV lithography. These substrate materials are, for example, quartz glass, glass, or glass ceramics with very low thermal expansion, such as ULE®, Zerodur®, Clearceram®, etc., ceramics, such as silicon nitride, silicon carbide, in particular silicon-impregnated silicon carbide composites (SiSiC), magnesium aluminum silicate ceramics, such as cordierite ceramics, etc. It will be apparent that the doping of the substrate 25 can also be carried out with two or more different noble metals 27.

[0066] Figure 3 shows, by way of example, the collector mirror 17 of the illumination optical unit 2 of the projection exposure apparatus 1 of Figure 1. The collector mirror 17 differs from the deflection mirror 19 shown in Figure 2 in that a structured layer 28 is formed between the substrate 25 and a reflective coating 26. The structured layer 28 has a structured surface in the form of a grating structure 29 and is made of amorphous silicon. The grating structure 29 serves as a spectral filter for suppressing extraneous light, i.e. radiation with wavelengths outside the EUV wavelength range, for example in the infrared wavelength range. The reflective coating 26 is applied to the structured layer 28 or to the grating structure 29.

[0067] In principle, the structural layer 28 is protected from reactive hydrogen species H+, H* by the deposited reflective coating 26. However, in the example shown in FIG. 3, the (maximum) edge steepness of the lattice structure 29 is large, approximately 90°. Deposition of the reflective coating 26 in the form of a continuous layer completely covering the structural layer 28 is possible even with such large edge steepness if the deposition is performed by an isotropic coating method, e.g., atomic layer deposition. However, deposition of the reflective coating 26, which in the illustrated example forms a multilayer coating with approximately 50 Si / Mo bilayers using an isotropic coating method, is very complicated. Furthermore, as shown in FIG. 3, the collector mirror 17 is not flat but typically has an elliptical or hyperbolic curvature, which further complicates coating by atomic layer deposition.

[0068] In the example shown, the reflective coating 26 is deposited on the structural layer 28 by anisotropic coating, more particularly by sputtering deposition. The structural layer 28 is doped with a noble metal 27 for protection against reactive hydrogen species H+, H*. The same is true for the reflective coating 26 deposited on the structural layer 28, since this reflective coating 26, or more particularly its silicon-containing layers, are exposed to the reactive hydrogen species H+, H*, in particular along the steep flanks of the lattice structure 29. A protective layer system (not shown) can be deposited on the reflective coating 26, in which the noble metal can likewise be doped in one or more layers.

[0069] For efficient doping of the structural layer 28, the reflective coating 26 and possibly one or more layers of the protective layer system, sputtering deposition is carried out using a sputtering target 37 doped with a noble metal 27, as will be explained below with reference to FIG. 4.

[0070] FIG. 4 shows in very simple form a sputtering deposition system 30 having a high-vacuum processing chamber 31. The processing chamber 31 is supplied with a noble gas 32 in the form of argon via a gas inlet. The noble gas 32 enters the chamber 31 in a space between a plate-shaped cathode 33 and a plate-shaped anode 34, where a constant electric field is generated over time. To generate the electric field, a constant voltage is placed between the cathode 33 and the anode 34. A magnet 35, located on the side of the cathode 33 away from the space, generates a magnetic field 36 in the space in addition to the electric field.

[0071] The rare gas 32 is ionized in the space between the cathode 33 and the anode 34 to form rare gas ions 32a, which are accelerated towards the cathode 33 and knock negatively charged particles 38 off a sputtering target 37 mounted thereon, and the particles 38 are accelerated towards the anode 34 and deposited on the substrate 25 of the reflective optical element 17 mounted thereon.

[0072] The sputtering target 37 in the illustrated example is made of monocrystalline or quasi-monocrystalline silicon doped with a noble metal 27. As a result of the doping, the structurable layer 28' deposited on the substrate 25 by sputter deposition is likewise doped with a noble metal 27. Correspondingly, it is also possible to deposit the reflective coating 26, or more specifically the silicon layer of the reflective coating 26, using a sputtering target 37 of silicon doped with a noble metal 27.

[0073] Prior to the deposition of the reflective coating 26, the structurable layer 28' is structured to form a structured layer 28 with a grating structure 29. The structuring can be carried out, for example, by a dry or wet chemical etching process of the structurable layer 28' using the structured layer. The structured layer, which serves as a sacrificial layer, can be structured, for example, by means of lithographic exposure or in some other way.

[0074] The dopant concentration of the noble metal 27 in the volume V of the substrate 25, the structural layer 28, and the reflective coating 26 is typically 10 10 cm -3 ~10 20 cm -3 , preferably 10 12 cm -3 ~10 16 cm -3 With such dopant concentrations, no significant increase in absorption of the doped silicon in reflective coating 26 or structural layer 28 or substrate 25 is expected, so the doping described herein can achieve improved HIO and radiation hardness of reflective optical element 17 at low cost and without inconvenience.

[0075] It will be apparent that doping with noble metal 27 need not necessarily be performed on both substrate 25 and structural layer 28 and reflective coating 26. For example, doping of substrate 25 can be omitted if it is protected from reactive hydrogen species in some other way. Such protection can be achieved, for example, by a shield as described in U.S. Patent No. 6,249,999, incorporated herein by reference in its entirety. Doping of structural layer 28 may not be necessary if it is completely covered by reflective coating 26.

Claims

1. A substrate (25); a reflective coating (26) deposited on the substrate (25); A reflective optical element (17, 19) for reflecting, in particular, EUV radiation (16), comprising: A reflective optical element, characterized in that the substrate (25) is doped with at least one noble metal (27) within its volume (V), A reflective optical element, wherein the substrate (25) is doped with the at least one noble metal (27) in a volumetric region extending from the surface of the substrate (25) to a distance greater than 1 mm from the surface of the substrate (25).

2. 2. A reflective optical element according to claim 1, wherein the substrate (25) is made from glass, in particular from titanium-doped quartz glass, from glass ceramic, from ceramic, preferably from silicon nitride ceramic, silicon carbide ceramic, silicon carbonitride ceramic, aluminum magnesium silicate ceramic, in particular cordierite ceramic, or from a composite material, in particular from a silicon-impregnated silicon carbide composite SiSiC.

3. 2. A reflective optical element according to claim 1, wherein the substrate (25) is made of silicon, in particular monocrystalline, pseudo-monocrystalline or polycrystalline silicon.

4. 3. A reflective optical element according to claim 1 or 2, wherein the substrate (25) is doped with the at least one noble metal (27) in a volumetric region extending from the surface of the substrate (25) to a distance of more than 2 mm, in particular more than 5 mm, from the surface of the substrate (25).

5. A reflective optical element according to any one of claims 1 to 4, wherein said substrate (25) is doped throughout its volume with said at least one noble metal (27).

6. A reflective optical element according to the preamble of claim 1, in particular according to any one of claims 1 to 5, a structural layer (28) formed between the substrate (25) and the reflective coating (26), preferably forming a grating structure (29), the structural layer (28) being doped with a noble metal (27); The reflective optical element further comprises:

7. A reflecting optical element according to the preamble of claim 1, in particular according to any one of claims 1 to 6, wherein said reflective coating (26) is doped with a noble metal (27).

8. A reflective optical element according to any one of claims 1 to 7, wherein the structured layer (28) and / or the reflective coating (26) comprises silicon doped with the noble metal (27).

9. A reflective optical element according to any one of claims 1 to 8, wherein said reflective coating forms a multi-layer coating (26) for reflecting EUV radiation (16).

10. 10. A reflective optical element according to any one of claims 1 to 9, wherein the noble metal (27) is selected from the group comprising Ru, Rh, Pd, Ag, Os, Ir, Pt, and Au.

11. 11. A reflective optical element according to claim 1, wherein the dopant concentration of the noble metal (27) is 10 １０ cm －３ ~10 ２０ cm －３ , preferably 10 １２ cm －３ ~10 １６ cm －３ A reflective optical element.

12. The reflective optical element according to any one of claims 1 to 11 is in the form of a collector mirror (17) of an illumination optical system (2) of a projection exposure apparatus (1).

13. An optical apparatus, preferably a projection exposure apparatus (1) for microlithography, in particular for EUV lithography, comprising: Optical device comprising at least one reflective optical element (17, 19) according to any one of claims 1 to 12.

14. A method for manufacturing a reflective optical element (17, 19) according to any one of claims 1 to 12, comprising the steps of: Providing a substrate (25); depositing a reflective coating (26) on said substrate (25), preferably depositing a structurable layer (28') on said substrate (25) before depositing said reflective coating (26) and structuring it after deposition; In a method comprising:

10. A method according to claim 9, wherein the reflective coating (26) and / or the structurable layer (28') are deposited by sputter deposition, the sputter deposition being achieved using a sputtering target (37) doped with a noble metal (27), preferably comprising silicon.

15. 15. A method according to the preamble of claim 14, in particular according to claim 14, wherein the provided substrate (25) is doped in its volume (V) with at least one noble metal (27).

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