Semiconductor Module

Abstract

To provide a semiconductor module capable of reducing damage to an insulating layer.SOLUTION: A semiconductor module 1 covering a substrate 10 having an insulating layer 20 on one surface 10a side with a housing 40 includes a fixture 60 for attaching the substrate 10 to the housing 40, mounting holes 12 and 43 are provided in the substrate 10 and the housing 40, and in a state in which a tubular inclusion 50 is inserted into the mounting hole 12 of the housing 40 while the lower end 50b side of the inclusion 50 is brought into contact with the one surface 10a side of the substrate 10, the housing 40 is attached to the substrate 10 by inserting and fastening the fixture 60 through the through hole 60B1 inside the inclusion 50 and the mounting hole 12 of the substrate 10, and a damage prevention portion 70 that prevents damage to the insulating layer 20 on the lower end 50b side of the inclusion 50 caused by attaching the substrate 10 with the fixture 60 is set at a portion where the substrate 10 is attached to the housing 40.SELECTED DRAWING: Figure 3

Description

[Technical Field]

[0001] The present invention relates to a semiconductor module. [Background technology]

[0002] Conventionally, for example, a semiconductor substrate using a metal substrate has been fixed to a housing by screws or the like via a grounding member. For example, the technology disclosed in Patent Document 1 can be referred to for such a technology. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Patent No. 5734476 DISCLOSURE OF THE INVENTION [Problem to be solved by the invention]

[0004] However, when a metal substrate is simply fixed with screws, the insulating layer on the metal substrate can be pinched between the screw and the metal substrate, damaging it and reducing its insulating performance.Furthermore, the damaged insulating layer can also cause the screw to become loose.

[0005] The present invention has been made in view of the above circumstances, and has an object to provide a semiconductor module that can prevent damage to the insulating layer. [Means for solving the problem]

[0006] In order to solve the above problems, the semiconductor module of the present invention is a semiconductor module having a substrate with an insulating layer on one side, and is characterized in that a damage prevention portion that prevents damage to the insulating layer caused by attaching the substrate is set in the portion where the substrate is attached.

[0007] In order to solve the above problems, the semiconductor module of the present invention is a semiconductor module having a substrate with an insulating layer on one side thereof, and is characterized in that it has a mounting fixture for mounting the substrate, and a damage prevention section is set in the portion where the substrate is mounted, which prevents damage to the insulating layer caused by mounting the substrate with the mounting fixture.

[0008] In order to solve the above problems, the semiconductor module of the present invention is a semiconductor module in which a substrate having an insulating layer on one side is covered with a housing, and is characterized in that it has a mounting fixture for attaching the substrate to the housing, and a damage prevention section is set at the part where the substrate is attached to the housing to prevent damage to the insulating layer caused by attaching the substrate with the mounting fixture.

[0009] In order to solve the above problems, the semiconductor module of the present invention is a semiconductor module in which a substrate having an insulating layer on one side is covered with a housing, and has a mounting fixture for attaching the substrate to the housing, and the substrate and the housing are provided with mounting holes, and the housing is attached to the substrate by inserting a tubular interposer into the mounting hole in the housing and abutting the lower end of the interposer against one side of the substrate, and then inserting the mounting fixture into the through hole inside the interposer and the mounting hole in the substrate and fastening them, and is characterized in that a damage prevention part is set at the part where the substrate is attached to the housing to prevent damage to the insulating layer on the lower end side of the interposer caused by attaching the substrate with the mounting fixture.

[0010] According to the present invention, the above-described configuration can prevent damage to the insulating layer.

[0011] The portion of one surface of the substrate where the substrate is attached is designated as a cut portion where the insulating layer is cut, and the cut portion is designated as a damage prevention portion, thereby preventing damage to the insulating layer. In other words, the damage prevention portion can be a region where no insulating layer exists, and can be a region where damage to the insulating layer is unlikely.

[0012] By making the lower end side of the inclusion, which abuts against one surface of the substrate via the insulating layer, an inclined tapered surface and using the inclined tapered surface as a damage prevention part, or by making the lower end side of the inclusion, which abuts against one surface of the substrate via the insulating layer, a curved surface and using the curved surface as a damage prevention part, stress is dispersed and the stress on the insulating layer on the lower end side of the inclusion is alleviated, thereby further preventing damage to the insulating layer.

[0013] The curved surface is a quarter-circular arc surface, and the outer end of the quarter-circular arc surface is configured to be in contact with the outer periphery of the side circumference of the tubular inclusion, and the inner end of the quarter-circular arc surface is configured to be perpendicular to the inner periphery of the side circumference of the tubular inclusion.Furthermore, the inner end of the quarter-circular arc surface is configured as a chamfered portion that is chamfered in an arc shape, which distributes stress and further reduces stress on the insulating layer at the lower end of the inclusion.

[0014] By providing an elastic member between the lower end side of the inclusion that abuts via the insulating layer and one surface side of the substrate, and using the elastic member as a damage prevention part, the stress on the insulating layer on the lower end side of the inclusion is alleviated by the elasticity, thereby further preventing damage to the insulating layer.

[0015] The elasticity of the elastic member gradually increases from the lower end of the inclusion toward one surface of the substrate, so that the stress on the insulating layer of the inclusion is gradually alleviated toward one surface of the substrate, thereby further preventing damage to the insulating layer.

[0016] The elastic member is made of a material whose elasticity increases with increasing temperature, so that the elasticity of the elastic member can be increased by utilizing the heat generated by the substrate.

[0017] A metal foil is provided on one side of the substrate via an insulating layer, and a heat sink for dissipating heat from the substrate is provided on the other side of the substrate.The design temperature is set to be below the heat resistance temperature of the circuit in the insulating layer and metal foil, and corresponds to the elasticity of the elastic member necessary to relieve the stress on the insulating layer of the inclusion.By setting the surface area of ​​the heat sink to have a heat dissipation amount corresponding to the design temperature, the elasticity of the elastic member can be set so as to relieve the stress on the insulating layer of the inclusion. By providing a space inside the edge of the housing for the insulating layer to fit into, it is possible to set the installation area of ​​the insulating layer on the board to a predetermined value while forming cut portions in the board as damage prevention portions.

[0018] The inclusion is inserted into an attachment hole in the edge of the housing and fixed at a predetermined insertion position, and further, when the inclusion is fixed in the attachment hole, its lower end protrudes a predetermined amount from the lower end of the edge of the housing, and the protruding height of the lower end of the inclusion from the lower end of the edge of the housing is set to be greater than the thickness of the insulating layer, and when the lower end of the inclusion is abutted against one side of the substrate while forming a cut portion, a space is formed between the one side of the substrate and the lower end of the edge of the housing into which the insulating layer can enter, and the insulating layer is provided on one side of the substrate so as to enter the space, so that the installation area of ​​the insulating layer on the substrate can be set to a predetermined value while forming a cut portion in the substrate as a damage prevention portion.

[0019] The inclusion is inserted into an attachment hole in the edge of the housing and fixed at a predetermined insertion position, and further, when the inclusion is fixed in the attachment hole, its lower end protrudes a predetermined amount from the lower end side of the edge of the housing, and the protruding height of the lower end side of the inclusion from the lower end side of the edge of the housing is set to be greater than the thickness of the metal foil, and when the lower end side of the inclusion is abutted against one side of the substrate via an insulating layer, a space is formed between the one side of the substrate and the lower end side of the edge of the housing into which the metal foil can enter, and by the metal foil being provided on one side of the substrate so as to enter the space, it is possible to set the installation area of ​​the metal foil on the substrate to a predetermined value while forming a damage prevention portion on the substrate. [Effects of the Invention]

[0020] According to the present invention, damage to the insulating layer can be prevented. [Brief explanation of the drawings]

[0021] [Figure 1] 1 is a plan view showing the overall configuration of a semiconductor module according to a first embodiment of the present invention. [Figure 2] FIG. 1 is a front view showing the overall configuration of a semiconductor module. [Figure 3] FIG. 2 is an enlarged front cross-sectional view showing a part of the semiconductor module. [Figure 4] FIG. 2 is a perspective view showing the configuration of the flat surface side of the substrate of the semiconductor module. [Figure 5] FIG. 2 is a perspective view showing the configuration of the bottom side of the substrate of the semiconductor module. [Figure 6] 1A to 1C are diagrams for explaining a method of forming a semiconductor module. [Figure 7] 7 is a view following FIG. 6 for explaining the method of forming the semiconductor module. [Figure 8] 8 is a view following FIG. 7 for explaining the method of forming the semiconductor module. [Figure 9] 8 for explaining the method of forming the semiconductor module. FIG. [Figure 10] 10 is a view following FIG. 9 for explaining the method of forming the semiconductor module. [Figure 11] 10 for explaining the method of forming the semiconductor module. FIG. [Figure 12] FIG. 6 is an enlarged front cross-sectional view showing a portion of a semiconductor module according to a second embodiment of the present invention. [Figure 13] 10A and 10B are diagrams showing the configuration of a substrate of a semiconductor module according to a third embodiment of the present invention. [Figure 14] FIG. 10 is an enlarged front cross-sectional view showing a portion of a semiconductor module according to a third embodiment of the present invention. [Figure 15]FIG. 10 is an enlarged front cross-sectional view showing a portion of a modified example of the semiconductor module according to the third embodiment of the present invention. [Figure 16] FIG. 16 is an enlarged front cross-sectional view showing a part of FIG. 15 in an enlarged manner. [Figure 17] FIG. 10 is an enlarged front cross-sectional view showing a portion of a semiconductor module according to a fourth embodiment of the present invention. [Figure 18] FIG. 10 is an enlarged front cross-sectional view showing a portion of a modified example of the semiconductor module according to the fourth embodiment of the present invention. [Figure 19] FIG. 19 is an enlarged front cross-sectional view showing a part of FIG. 18 in an enlarged scale. [Figure 20] FIG. 10 is an enlarged front cross-sectional view showing a portion of a semiconductor module according to a fifth embodiment of the present invention. [Figure 21] FIG. 10 is an enlarged front cross-sectional view showing a portion of another semiconductor module according to the fifth embodiment of the present invention. [Figure 22] FIG. 11 is an enlarged front cross-sectional view showing a portion of another modified example of the semiconductor module according to the third embodiment of the present invention. [Figure 23] FIG. 11 is an enlarged front cross-sectional view showing a portion of yet another modified example of the semiconductor module according to the third embodiment of the present invention. [Figure 24] FIG. 10 is an enlarged front cross-sectional view showing a portion of another modified example of the semiconductor module according to the fourth embodiment of the present invention. [Figure 25] FIG. 10 is an enlarged front cross-sectional view showing a portion of yet another modified example of the semiconductor module according to the fourth embodiment of the present invention. [Figure 26] FIG. 11 is an enlarged front cross-sectional view showing a part of a modified example of the semiconductor module according to the fifth embodiment of the present invention. [Figure 27] FIG. 10 is an enlarged front cross-sectional view showing a part of a semiconductor module according to a sixth embodiment of the present invention. [Figure 28] FIG. 13 is a plan view showing the configuration of an insulating layer of a semiconductor module according to a sixth embodiment of the present invention. [Figure 29] FIG. 13 is a plan view showing the configuration of a substrate of a semiconductor module according to a sixth embodiment of the present invention. [Figure 30] FIG. 13 is an enlarged front cross-sectional view showing a part of a modified example of the semiconductor module according to the sixth embodiment of the present invention. [Figure 31] FIG. 13 is an enlarged front cross-sectional view showing a part of another modified example of the semiconductor module according to the sixth embodiment of the present invention. DETAILED DESCRIPTION OF THE INVENTION

[0022] Hereinafter, first to sixth embodiments of the present invention will be described. [First embodiment] A first embodiment of the present invention will be described in detail with reference to FIGS. 1 to 11. FIG. 1 is a plan view showing the overall configuration of a semiconductor module according to the first embodiment of the present invention, FIG. 2 is a front view showing the overall configuration of the semiconductor module, FIG. 3 is an enlarged front cross-sectional view showing a portion of the semiconductor module, FIG. 4 is a perspective view showing the configuration of the top side of the substrate of the semiconductor module, FIG. 5 is a perspective view showing the configuration of the bottom side of the substrate of the semiconductor module, and FIGS. 6 to 11 are diagrams for explaining a method of forming the semiconductor module. In the following description, the housing 40 side of the semiconductor module 1 is referred to as the top, the substrate 10 side as the bottom, one of the long sides of the semiconductor module 1, which has a substantially rectangular (rectangular) shape in a plan view, is referred to as the front side, the opposite side as the back side, and the short sides of the semiconductor module 1 are referred to as the side, and each direction will be clearly indicated in the drawings.

[0023] An overview of the semiconductor module 1 of the present invention will be described with reference to Figures 1 to 5. The semiconductor module 1 has a substrate 10, an insulating layer 20, a metal foil 30, a housing 40, an inclusion 50, a mounting fixture 60, and a damage prevention part 70.

[0024] That is, the semiconductor module 1 is configured such that the substrate 10, which has the metal foil 30 provided on one surface 10a (top surface 10a) thereof with the insulating layer 20 interposed therebetween, is covered with the housing 40. The semiconductor module 1 is configured such that the edge 11 on the one surface 10a of the substrate 10 is attached to the edge 42 of the housing 40 via the attachment 60. The semiconductor module 1 is configured such that the lower end 50b of the inclusion 50 abuts against the edge 11 on the one surface 10a of the substrate 10 when the edge 11 of the substrate 10 is attached to the edge 42 of the housing 40. The damage prevention part 70 in the semiconductor module 1 can prevent damage to the insulating layer 20 that occurs when the edge 11 of the substrate 10 is attached to the edge 42 of the housing 40 via the attachment 60. The damage prevention part 70 is located at the portion where the edge 11 of the substrate 10 is attached to the edge 42 of the housing 40.

[0025] The substrate 10 is plate-shaped and has a substantially rectangular (rectangular) shape. The substrate 10 can be made of, for example, metal such as aluminum or copper, or ceramics. One surface 10a of the substrate 10 is a mounting surface for the insulating layer 20, the metal foil 30, and the housing 40. A heat sink 13 is provided on the other surface 10b (bottom surface 10b) of the substrate 10. The heat sink 13 can be made of, for example, metal such as aluminum or copper. The heat sink 13 can dissipate heat generated by the metal foil 30 provided on the substrate 10 to the outside. The heat sink 13 has a rectangular prism shape extending downward from the other surface 10b of the substrate 10, and many (multiple) heat sinks 13 are provided on the other surface 10b of the substrate 10. The surface area of ​​the heat sink 13 can be set to provide a heat dissipation amount corresponding to the design temperature of the semiconductor module 1. The design temperature of the semiconductor module 1 can be set to be equal to or lower than the heat resistance temperature of the circuits in the insulating layer 20 and the metal foil 30.

[0026] An attachment hole 12 is provided in the edge 11 of the substrate 10. By inserting a mounting fixture 50 through the attachment hole 12, the edge 11 of the substrate 10 can be attached in a predetermined manner to the edge 42 of the housing 40. The attachment hole 12 is circular and is provided so as to penetrate from one surface 10a of the edge 11 of the substrate 10 to the other surface 10b.

[0027] The insulating layer 20 can be formed of an insulator such as resin and has a substantially rectangular (approximately oblong) shape. The insulating layer 20 can electrically insulate the one surface 10a of the substrate 10 from the metal foil 30. The metal foil 30 can be, for example, copper foil. A circuit pattern is provided on the metal foil 30, allowing predetermined wiring and circuits to be mounted. The installation area of ​​the metal foil 30 on the one surface 10a of the substrate 10 is smaller than the installation area of ​​the insulating layer 20, and the position of the end 30a of the metal foil 30 is set to be inside the position of the end 20a of the insulating layer 20. In other words, the distance from the end 20a of the insulating layer 20 to the end 30a of the metal foil 30 is set to a predetermined insulation distance.

[0028] Here, the periphery of the mounting hole 12 on the one surface 10a of the substrate 10 is the abutment portion that abuts against the lower end 50b of the inclusion 50 when the edge portion 11 of the substrate 10 is attached to the edge portion 42 of the housing 40, and is the portion where the edge portion 11 of the substrate 10 is attached to the edge portion 42 of the housing 40. The periphery of this mounting hole 12 is a cut portion 80 (cut portion 80) where the insulating layer 20 is cut (severed), and no insulating layer 20 is provided, exposing the one surface 10a of the substrate. The cut portion 80 has a rounded shape that follows the circular shape of the mounting hole 12 and is formed to surround the periphery of the mounting hole 12. This cut portion 80 can be used as a damage prevention portion 70 that prevents damage to the insulating layer 20 on the lower end 50b of the inclusion 50.

[0029] That is, in the cut portion 80, the lower end 50b side of the inclusion 50 directly abuts against one surface 10a side of the substrate 10, so the lower end 50b side of the inclusion 50 does not abut against the insulating layer 20, and this is an area where damage to the insulating layer 20 on the lower end 50b side of the inclusion 50 does not occur.

[0030] The insulating layer 20 is provided on the first surface 10a of the substrate 10 up to the vicinity of the contact portion between the first surface 10a of the substrate 10 and the lower end 50b of the inclusion 50, ie, the vicinity of the cut portion 80.

[0031] The housing 40 can be formed of a resin such as polyphenylene sulfide (PPS). The housing 40 has a main body 41 and an edge 42, and the main body 41 has a rising portion 41a and a ceiling 41b. The rising portion 41a is formed to be annular in plan view and rise upward. The ceiling 41b is provided to close the upper end side of the annular rising portion 41a. In the housing 40, an inner space 41c surrounded by the rising portion 41a and the ceiling 41b can be used as a space that surrounds the circuit mounted on the substrate 10 when the substrate 10 is covered with the housing 40.

[0032] The edge portion 42 is annular in plan view and is strip-shaped with a predetermined width. The edge portion 42 is formed like a flange, extending in short lengths from the lower end of the rising portion 41a of the main body 41 toward the front, back, and sides. The edge portion 42 is provided with mounting holes 43, through which a mounting fixture 50 can be inserted to mount the edge portion 11 of the substrate 10 to the edge portion 42 of the housing 40 in a predetermined manner. The mounting holes 43 are circular and have the same shape and dimensions as the mounting holes 12 of the substrate 10, and are provided so as to penetrate the edge portion 42 from the upper end 42a to the lower end 42b. The edge portion 11 of the substrate 10 is mounted to the edge portion 42 of the housing 40 by aligning the positions of the mounting holes 12 and 43.

[0033] The inclusion 50 is made of a metal such as brass and has a short cylindrical shape. The inclusion 50 is inserted into a mounting hole 43 in the edge portion 42 of the housing 40 and fixed at a predetermined insertion position. The inclusion 50 can be fixed to the mounting hole 43 of the housing 40 by adhesion, crimping, or the like.

[0034] When the inclusion 50 is fixed in the mounting hole 43 of the housing 40, the lower end 50b of the inclusion 50 protrudes a predetermined distance from the lower end 42b of the edge 42 of the housing 40. The lower end 50b of the inclusion 50 forms a flat surface 50b1. The protruding portion of the inclusion 50 at the lower end 50b abuts against a cut portion 80 on one surface 10a of the substrate 10 when the edge 11 of the substrate 10 is attached to the edge 42 of the housing 40. The cut portion 80 is formed by cutting the insulating layer 20 so as to have a dimension corresponding to the outer diameter of the lower end 50b of the cylindrical inclusion 50 (so as to be slightly larger than the outer diameter of the lower end 50b of the inclusion 50). The protruding height (protruding amount) m1 of the lower end 50b of the inclusion 50 from the lower end 42b of the edge 42 of the housing 40 is set to be greater than the thickness m2 of the insulating layer 20.

[0035] That is, when the cylindrical inclusion 50 is inserted into the mounting hole 43 in the edge 42 of the housing 40 and fixed at a predetermined insertion position, a step is formed between the edge 42 of the housing 40 and the lower end 50b of the inclusion 50. That is, when the lower end 50b of the inclusion 50 is brought into contact with the cut portion 80 on the one surface 10a of the substrate 10, a stepped space 90 into which the insulating layer 20 can enter is formed between the one surface 10a of the substrate 10 and the lower end 42b of the edge 42 of the housing 40. As described above, the installation area of ​​the insulating layer 20 reaches a position near the cut portion 80 on the one surface 10a of the substrate 10, and the insulating layer 20 can be provided on the one surface 10a of the substrate 10 so as to enter the space 90.

[0036] The mounting device 60 is formed of a metal such as iron, and has a bolt portion 60A and a nut portion 60B. The bolt portion 60A has a head portion 60A1 that protrudes laterally and a shaft portion 60A3 that extends axially downward from a lower surface 60A2 of the head portion 60A1. A male screw groove 60A4 is provided on the side peripheral surface of the shaft portion 60A3. The nut portion 60B has a through hole 60B1, and a female screw groove 60B2 is provided on the inner surface of the through hole 60B1. The female screw groove 60B2 screws into the male screw groove 60A4 of the shaft portion 60A3 of the bolt portion 60A.

[0037] That is, with the lower end 50b of the inclusion 50 abutting against one surface 10a of the substrate 10, the shaft portion 60A3 of the mounting fixture 60 can be inserted through the through hole 50a inside the inclusion 50 and the mounting hole 12 of the substrate 10.

[0038] The semiconductor module 1 configured as above can be formed as follows. That is, first, a rectangular insulating layer 20 is prepared as shown in Fig. 6. Next, as shown in Fig. 7, the edge 20b side of the substantially rectangular insulating layer 20 is cut into a rounded shape that follows the circular shape of the mounting hole 12 of the substrate 10. This cutting of the insulating layer 20 is performed so that the cut size corresponds to the outer diameter of the lower end 50b side of the cylindrical inclusion 50 (so that the cut size is slightly larger than the outer diameter of the lower end 50b side of the inclusion 50).

[0039] 8, the insulating layer 20, whose edge 20b has been cut in a predetermined manner, is provided on one surface 10a of the substrate 10 so that the cut portion corresponds to the position of the mounting hole 12. As a result, a cut portion 80 is formed in the insulating layer 20 at the edge 11 on the one surface 10a of the substrate 10. A metal foil 30 is further provided on the upper surface of the insulating layer 20.

[0040] 9, the cylindrical inclusion 50 is inserted into the mounting hole 43 in the edge 42 of the housing 40 and fixed at a predetermined insertion position. This fixing is performed so that the lower end 50b of the inclusion 50 protrudes from the lower end 42b of the edge 42 of the housing 40. The protrusion height (protrusion amount) m1 of the lower end 50b of the inclusion 50 from the lower end 42b of the edge 42 of the housing 40 is greater than the thickness m2 of the insulating layer 20.

[0041] 10 , the lower end 50b of the inclusion 50 is brought into contact with the cut portion 80 of the edge portion 11 on the one surface 10a of the substrate 10, i.e., the damage prevention portion 70. This prevents damage to the insulating layer 20 and forms a stepped space 90 between the one surface 10a of the substrate 10 and the lower end 42b of the edge portion 42 of the housing 40, into which the insulating layer 20 can enter. The insulating layer 20 is provided on the one surface 10a of the substrate 10 so as to enter the space 90. This allows the installation area of ​​the insulating layer 20 on the substrate 10 to be set to a predetermined value while forming the cut portion 80 as the damage prevention portion 70 on the substrate 10.

[0042] 11 , with the lower end 60b of the inclusion 50 abutting against the cut portion 80 on one surface 10a of the substrate 10, i.e., with the inclusion abutting against the damage prevention portion 70, the shank 60A3 of the mounting tool 50 is inserted through the through-hole 50a inside the inclusion 50 and the mounting hole 12 of the substrate 10. As a result, the upper end 50c of the inclusion 50 abuts against the lower surface 60A2 of the head 60A1 of the bolt portion 60A of the mounting tool 60, and the lower end 60A5 of the shank 60A3 protrudes from the other surface 10b of the substrate 10.

[0043] 3, the lower end 60A5 of the protruding shaft portion 60A3 is fastened with a nut 60B. This fastening is performed by threading a male screw groove 60A4 on the side peripheral surface of the shaft portion 60A3 into a female screw groove 60B2 of the nut portion 60B. This allows the edge portion 11 of the substrate 10 to be attached to the edge portion 42 of the housing 40 such that the edge portion 11 of the substrate 10 and the edge portion 42 of the housing 40 are sandwiched between the head 60A1 of the bolt 60A and the nut portion 60B.

[0044] As described above, according to the first embodiment, cut portion 80 is formed by cutting insulating layer 20 at the portion of one surface 10a of substrate 10 that abuts against the lower end 50b of inclusion 50 and where edge portion 11 of substrate 10 is attached to edge portion 42 of housing 40, and by using cut portion 80 as damage prevention portion 70, it is possible to prevent damage to insulating layer 20. In other words, by using cut portion 80 as damage prevention portion 70, damage prevention portion 80 can be made into an area where insulating layer 20 does not exist, and can be made into an area where damage to insulating layer 20 is unlikely.

[0045] [Second embodiment] A second embodiment of the present invention will be described in detail with reference to Fig. 12. Fig. 12 is an enlarged front cross-sectional view showing a portion of a semiconductor module 2 according to the second embodiment of the present invention. Note that in the following description and Fig. 12, components denoted by the same reference numerals as those in the above-described embodiment and components not described will be considered to be similar to those in the above-described embodiment and description thereof may be omitted.

[0046] In the semiconductor module 2 of the second embodiment, similarly to the first embodiment, the inclusion 50 is fixed in the mounting hole 43 of the housing 40, and the lower end 50b side of the inclusion 50 protrudes a predetermined distance from the lower end 42b side of the edge 42 of the housing 40. In the second embodiment, the protrusion height (protrusion amount) n1 of the lower end 50b side of the inclusion 50 from the lower end 42b side of the edge 42 of the housing 40 is set to be larger than the sum of the thickness n2 of the insulating layer 20 and the thickness n3 of the metal foil.

[0047] That is, with the cut portion 80 formed on the one surface 10a of the substrate 10 and the lower end 50b of the inclusion 50 abutting against the one surface 10a of the substrate 10, a stepped space 90' ​​is formed between the one surface 10a of the substrate 10 and the lower end 42b of the edge portion 42 of the housing 40, into which the laminated insulating layer 20 and metal foil 30 can enter. This allows the laminated insulating layer 20 and metal foil 30 to be provided on the one surface 10a of the substrate 10 so as to enter the space 90', and while the cut portion 80 serving as the damage prevention portion 70 is formed in the substrate 10, the installation areas of not only the insulating layer 20 but also the metal foil 30 on the substrate 10 can be set to a predetermined area.

[0048] [Third embodiment] A third embodiment of the present invention will be described in detail with reference to Figures 13 to 16. Figure 13 is a diagram showing the configuration of a substrate of a semiconductor module according to the third embodiment of the present invention, Figure 14 is an enlarged front cross-sectional view showing a portion of the semiconductor module according to the third embodiment of the present invention, Figure 15 is an enlarged front cross-sectional view showing a portion of a modified example of the semiconductor module according to the third embodiment of the present invention, and Figure 16 is an enlarged front cross-sectional view showing a portion of Figure 15. In the following description and in Figures 13 to 16, components denoted by the same reference numerals as those in the above-described embodiments and components not described will be considered to be the same as those in the above-described embodiments, and description thereof may be omitted.

[0049] The semiconductor module 3 of the third embodiment shows a configuration in which the damage prevention portion 70 is formed without providing the cut portion 80 on the substrate 10.

[0050] 13 and 14, the insulating layer 20 is provided on all areas of the one surface 10a of the substrate 10 except for the mounting holes 12, and in the third embodiment, the insulating layer 20 is provided even in areas where the cuts 80 around the mounting holes 12 are provided in the first and second embodiments. As a result, when the edge 42 of the housing 40 is attached to the edge 11 on the one surface 10a of the substrate 10, the lower end 50b of the inclusion 50 comes into direct contact with the insulating layer 20.

[0051] In the semiconductor module 3 of the third embodiment, the lower end 50b side of the inclusion 50, which abuts against the one surface 10a side of the substrate 10 via the insulating layer 20, is formed as an inclined tapered surface 50b2, and the inclined tapered surface 50b2 serves as a damage prevention portion 70. That is, when the edge portion 42 of the housing 40 is attached to the edge portion 11 on the one surface 10a side of the substrate 10, the tapered surface 50b2 distributes stress on the insulating layer 20 on the lower end 50b side of the inclusion 50, thereby alleviating the stress on the insulating layer 20 on the lower end 50b side of the inclusion 50. This makes it possible to prevent damage to the insulating layer 20.

[0052] 15 and 16, the outer end 50b21 side and the inner end 50b22 side of the tapered surface 50b2 may be further chamfered into arc-shaped (arc-shaped that protrudes outward) chamfered portions 50b21', 50b22'. This makes it possible to further reduce stress on the insulating layer 20 on the chamfered outer end 50b21 side and the inner end 50b22 side when the edge portion 42 of the housing 40 is attached to the edge portion 11 on one surface 10a of the substrate 10. The tapered surface 50b2 may be chamfered only on either the outer end 50b21 side or the inner end 50b22 side.

[0053] [Fourth embodiment] A fourth embodiment of the present invention will be described in detail with reference to Figures 17 to 19. Figure 17 is an enlarged front cross-sectional view showing a portion of a semiconductor module according to the fourth embodiment of the present invention, Figure 18 is an enlarged front cross-sectional view showing a portion of a modified example of the semiconductor module according to the fourth embodiment of the present invention, and Figure 19 is an enlarged front cross-sectional view showing a portion of Figure 18. In the following description and in Figures 17 to 19, components denoted by the same reference numerals as those in the above-described embodiments and components not described will be considered to be similar to those in the above-described embodiments and descriptions thereof may be omitted.

[0054] The semiconductor module 4 of the fourth embodiment has a configuration in which the damage prevention portion 70 is formed without providing the cut portion 80 on the substrate 10.

[0055] That is, the insulating layer 20 is provided on all areas on the one surface 10a of the substrate 10 except for the mounting holes 12, and in the fourth embodiment, the insulating layer 20 is also provided in the areas where the cuts 80 around the mounting holes 12 are provided in the first and second embodiments (FIG. 13). As a result, when the edge 42 of the housing 40 is attached to the edge 11 on the one surface 10a of the substrate 10, the lower end 50b of the inclusion 50 comes into direct contact with the insulating layer 20.

[0056] 17 , in the semiconductor module 4 of the fourth embodiment, the lower end 50b of the inclusion 50, which abuts against the one surface 10a of the substrate 10 via the insulating layer 20, is formed as a curved surface 50b3, and the curved surface 50b3 is formed as a damage prevention portion 70. This curved surface 50b3 can be formed as a downwardly protruding arc surface, more specifically, as a quarter arc surface, and the outer end 50b32 of the quarter arc surface can be formed so as to abut against the outer periphery 50′ of the side circumference of the tubular inclusion 50, and the inner end 50b31 of the quarter arc surface can be formed so as to be perpendicular to the inner periphery 50″ of the side circumference of the tubular inclusion 50. That is, when the edge 42 of the housing 40 is attached to the edge 11 on the one surface 10a of the substrate 10, the arcuate surface acts to distribute stress on the insulating layer 20 on the lower end 50b side of the inclusion 50, thereby alleviating the stress on the insulating layer 20 on the lower end 50b side of the inclusion 50. This makes it possible to prevent damage to the insulating layer 20.

[0057] 18 and 19, the inner end 50b31 side of the quarter-circular arc surface may be chamfered into an arc shape (an arc shape that protrudes outward) to form a chamfered portion 50b31'. This makes it possible to further reduce stress on the insulating layer 20 on the inner end 50b31 side when the edge portion 42 of the housing 40 is attached to the edge portion 11 on the one surface 10a side of the substrate 10 (the outer end 50b32 side of the quarter-circular arc surface is formed so as to contact the outer periphery 50' side of the side periphery of the tubular inclusion 50, thereby achieving the same effect as the stress reduction effect achieved when the outer end 50b32 side is chamfered into an arc shape).

[0058] In this fourth embodiment, the desired effect can be achieved even if the curved surface 50b3 is a curved surface other than a circular arc surface, or is another circular arc surface such as a semicircular arc surface, a 2 / 3 circular arc surface, or a 3 / 4 circular arc surface.

[0059] [Fifth embodiment] A fifth embodiment of the present invention will be described in detail with reference to Figures 20 and 21. Figure 20 is an enlarged front cross-sectional view showing a portion of the configuration of a semiconductor module according to the fifth embodiment of the present invention, and Figure 21 is an enlarged front cross-sectional view showing a portion of another semiconductor module according to the fifth embodiment of the present invention. Note that in the following description and Figure 20, components denoted by the same reference numerals as those in the above-described embodiments and components not described will be considered to be similar to those in the above-described embodiments and description thereof may be omitted.

[0060] The semiconductor module 5 of the fifth embodiment has a configuration in which the damage prevention portion 70 is formed without providing the cut portion 80 on the substrate 10.

[0061] That is, the insulating layer 20 is provided on all areas on the one surface 10a of the substrate 10 except for the mounting holes 12, and in the fifth embodiment, the insulating layer 20 is also provided in areas where the cuts 80 around the mounting holes 12 are provided in the first and second embodiments (FIG. 13). As a result, when the edge 42 of the housing 40 is attached to the edge 11 on the one surface 10a of the substrate 10, the lower end 50b of the inclusion 50 comes into direct contact with the insulating layer 20.

[0062] In the semiconductor module 5 of the fifth embodiment, a resilient member 95 having a predetermined resilience is provided between the lower end 50b of the inclusion 50 and the one surface 10a of the substrate 10, which abut against each other via the insulating layer 20, and the resilient member 95 can serve as the damage prevention part 70. That is, the lower end 50b of the inclusion 50 abuts against the insulating layer 20 provided on the one surface 10a of the substrate 10 via the resilient member 95, so that the stress applied to the insulating layer 20 by the inclusion 50 can be alleviated by the resilience of the resilient member 95. This makes it possible to prevent damage to the insulating layer 20. The resilient member 95 can be formed of, for example, a silicon-based, rubber-based, acrylic-based, or urethane-based material.

[0063] 21, the elastic member 95 may be provided by stacking a plurality of elastic members 95 having different elasticities in the vertical direction. For example, if the elasticity of the stacked elastic members 95 is gradually increased from the lower end 50b of the inclusion 50 toward the insulating layer 20 provided on one surface 10a of the substrate 10 (the elasticity is gradually softened toward the insulating layer 20), the stress of the inclusion 50 on the insulating layer 20 can be gradually alleviated toward the insulating layer 20.

[0064] Furthermore, the elastic member 95 may be made of a material that becomes more elastic as the temperature rises (becomes softer as the temperature rises). By using such a configuration, the elasticity of the elastic member 95 can be increased (become softer while using heat) using the heat generated by the substrate 10.

[0065] That is, metal foil 30 is provided on one surface 10a of substrate 10 via insulating layer 20. A predetermined amount of heat is generated from the circuit mounted on metal foil 30, and heat sink 13 for dissipating the heat of substrate 10 is provided on other surface 10b of substrate 10.

[0066] In other words, the design temperature of the semiconductor module 5 is set to be below the heat resistance temperature of the circuit in the insulating layer 20 and the metal foil 30, and in accordance with the elasticity of the elastic member 95 required to relieve the stress of the inclusion 50 on the insulating layer 20 (the material of the elastic member 95 is selected to be a material that exhibits the elasticity required to relieve the stress of the inclusion 50 on the insulating layer 20 within a range below the heat resistance temperature of the circuit in the insulating layer 20 and the metal foil 30).

[0067] The surface area and arrangement of the heat sink 13 are set so that the heat dissipation amount corresponds to the design temperature of the semiconductor module 5. By setting the surface area and arrangement of the heat sink 13 in this manner, the elasticity of the elastic member 95 can be set so as to relieve stress on the insulating layer 20 of the inclusion 50 (it goes without saying that the configuration using the elastic member 95 of the fifth embodiment is applicable not only to the case where the lower end 50b of the inclusion 50 is the flat surface 50b1, but also to the case where the lower end 50b is the tapered surface 50b2 or the curved surface 50b3 as in the third and fourth embodiments, and a synergistic stress relief effect can be obtained by combining the tapered surface 50b2 or the curved surface 50b3 with the elastic member 95).

[0068] The elastic member 95, which becomes more elastic as the temperature rises (becomes softer as the temperature rises), may be made of a material such as a thermoplastic resin.

[0069] In the semiconductor modules 3, 4, and 5 of the third to fifth embodiments described above, as shown in Figures 22 to 26, the protrusion heights (protrusion amounts) o1, p1, q1, r1, and s1 of the lower end 50b side of the inclusion 50 from the lower end 42b side of the edge 42 of the housing 40 (more precisely, the heights o1, p1, q1, r1, and s1 from the lower end 42b side of the edge 42 of the housing 40 to the upper surface 20c of the insulating layer 20, taking into account the thickness of the insulating layer 20) may be set to be greater than the thicknesses o3, p3, q3, r3, and s3 of the metal foil, so that when the lower end 50b side of the inclusion 50 is in direct contact with the insulating layer 20 provided on one surface 10a of the substrate 10, a stepped space 90'' into which the laminated metal foil 30 can fit may be formed between the insulating layer 20 provided on one surface 10a of the substrate 10 and the lower end 42b side of the edge 42 of the housing 40. This allows the laminated metal foil 30 to be placed on one surface 10a of the substrate 10 so as to enter the space 90'', and the installation area of ​​the metal foil 30 on the substrate 10 can be set to a predetermined value while forming a damage prevention portion 70 on the substrate 10.

[0070] [Sixth embodiment] A sixth embodiment of the present invention will be described in detail with reference to Figures 27 to 31. Figure 27 is an enlarged front cross-sectional view showing a portion of a semiconductor module according to the sixth embodiment of the present invention, Figure 28 is a plan view showing the configuration of an insulating layer of the semiconductor module according to the sixth embodiment of the present invention, Figure 29 is a plan view showing the configuration of a substrate of the semiconductor module according to the sixth embodiment of the present invention, Figure 30 is an enlarged front cross-sectional view showing a portion of a modified example of the semiconductor module according to the sixth embodiment of the present invention, and Figure 31 is an enlarged front cross-sectional view showing a portion of another modified example of the semiconductor module according to the sixth embodiment of the present invention. In the following description and in Figures 27 to 31, components denoted by the same reference numerals as those in the above-described embodiments and components not described will be considered to be similar to those in the above-described embodiments and description thereof may be omitted.

[0071] As shown in Figure 27, the semiconductor module 6 of this sixth embodiment has a configuration in which the height positions of the lower end 50b of the inclusion 50 and the lower end 42b of the housing 40 are the same, i.e., the lower end 50b of the inclusion 50 and the lower end 42b of the housing 40 are flush with each other.

[0072] That is, in the semiconductor module 6 of the sixth embodiment, as shown in FIG. 28, the end 20a' side of the insulating layer 20' is cut into a strip-like, annular shape with a predetermined width, and as shown in FIG. 29, when the insulating layer 20' is provided on the substrate 10, the entire edge 11 side of the substrate 10 becomes a cut portion 80' (cut portion 80') where the insulating layer 20' is cut (severed), i.e., a damage prevention portion 70.

[0073] By configuring it in this manner, when the edge 11 of the substrate 10 is attached to the edge 42 of the housing 40 via the mounting fixture 60, the lower end 42b of the edge 42 of the housing 40 directly abuts the cut portion 80' on one surface 10a of the substrate 10 without forming a space 90, thereby preventing damage to the insulating layer 20 that would occur when the edge 11 of the substrate 10 is attached to the edge 42 of the housing 40 via the mounting fixture 60.

[0074] Also, as shown in Figure 30, the interposition member 50 may be omitted, and when the edge 11 of the substrate 10 is attached to the edge 42 of the housing 40 via the mounting fixture 60, the lower end 42b of the edge 42 of the housing 40 may directly abut the cut portion 80' on one surface 10a of the substrate 10 without forming a space 90.

[0075] However, in this sixth embodiment, the lower end 42b side of the edge portion 42 of the housing 40 directly abuts the cut portion 80' on one surface 10a side of the substrate 10 without forming a space 90, so the installation area of ​​the insulating layer 20 and the metal foil 30 is more limited than in the first to fifth embodiments, and from the viewpoint of the installation area of ​​the insulating layer 20 and the metal foil 30, the first to fifth embodiments are more preferable embodiments.

[0076] 31, the inside of the lower end 42b side of the edge 42 of the housing 40 may be stepped. That is, with the lower end 42b side of the edge 42 of the housing 40 in direct contact with the edge 11 on the one surface 10a side of the substrate 10, a stepped space 90''' into which the insulating layer 20 fits may be formed between the one surface 10a side of the substrate 10 and the inside of the lower end 42b side of the edge 42 of the housing 40, and the insulating layer 20 may be provided on the one surface 10a side of the substrate 10 so as to fit into the space 90'''.

[0077] In this case, the height of the space 90''' may be set even larger so that both the insulating layer 20 and the metal foil 30 can be accommodated therein.

[0078] However, in the sixth embodiment, the size of the space 90''' is limited from the viewpoint of the strength of the housing 40, whereas the first to fifth embodiments described above, in which the lower end 50b of the inclusion 50 protrudes from the lower end 42b side of the edge 42 of the housing 40 to form the spaces 90, 90', 90'', have less impact on the strength of the housing 40 and there are fewer restrictions on the size of the spaces 90, 90', 90'', are therefore more preferable from the viewpoint of the strength of the housing 40.

[0079] It should be noted that the present invention is not limited to the first to sixth embodiments described above, and various modifications and applications are possible within the scope of the invention as defined in the claims. [Explanation of symbols]

[0080] m1: Projection height n1: Projection height m2: thickness n2: Thickness o1: Projection height o3: Thickness p1: Projection height p3: thickness q1: Projection height Q3:Thickness r1: protrusion height r3: thickness s1: Projection height s3: thickness 1, 2, 3, 4, 5, 6: Semiconductor modules 10: Circuit board 10a: First side (top) 10b: Other side (bottom) 11: Edge 12: Mounting holes 13: Heat sink 20: Insulating layer 20´: Insulation layer 20a: End 20b:Edge 20a´:End 30: Metal foil 30a: End 40: Cabinet 41: Main body 41a: Rising part 41b: Ceiling 41c: Space 42: Edge 42a:Top end 42b: Bottom edge 43: Mounting hole 50:Inclusion 50´:Circumference 50´´:Inner circumference 50a:Through hole 50b: Bottom end 50c: Upper end 50b1:Flat surface 50b2: Tapered surface 50b21: Outer edge 50b21´: Chamfered part 50b22: Inner edge 50b22´: Chamfered part 50b3: curved surface 50b31: Inner edge 50b31´: Chamfered part 50b32: Outer edge 60: Mounting fixture 60A: Bolt section 60A1: Head 60A2:Bottom side 60A3: Shaft 64A4: Male screw groove 60A5: Bottom end 60B: Nut part 60B1:Through hole 60B2: Female screw groove 70: Damage prevention section 80: Cutting section (cutting section) 80´: Cutting section (cutting section) 90: Space 90´:Space 90´´:Space 95: Elastic member

Claims

1. A semiconductor module in which a substrate having an insulating layer on one side is covered with a housing, a mounting fixture for mounting the substrate to the housing; mounting holes are provided in the substrate and the housing, and the housing is attached to the substrate by inserting a tubular interposer into the mounting hole of the housing and abutting a lower end side of the interposer against one surface of the substrate, and then inserting the mounting fixture into a through-hole inside the interposer and the mounting hole of the substrate and fastening them together; a damage prevention portion for preventing damage to the insulating layer at the lower end side of the inclusion caused by attaching the substrate with the attachment tool is provided at a portion where the substrate is attached to the housing; A semiconductor module characterized in that the lower end side of the inclusion, which abuts against one surface of the substrate via the insulating layer, is an inclined tapered surface, and the inclined tapered surface serves as the damage prevention portion.

2. A semiconductor module in which a substrate having an insulating layer on one side is covered with a housing, a mounting fixture for mounting the substrate to the housing; mounting holes are provided in the substrate and the housing, and the housing is attached to the substrate by inserting a tubular interposer into the mounting hole of the housing and abutting a lower end side of the interposer against one surface of the substrate, and then inserting the mounting fixture into a through-hole inside the interposer and the mounting hole of the substrate and fastening them together; a damage prevention portion for preventing damage to the insulating layer at the lower end side of the inclusion caused by attaching the substrate with the attachment tool is provided at a portion where the substrate is attached to the housing; A semiconductor module, characterized in that a lower end side of the intervening member that abuts against one surface side of the substrate via the insulating layer is curved, and the curved surface serves as the damage prevention portion.

3. A semiconductor module in which a substrate having an insulating layer on one side is covered with a housing, a mounting fixture for mounting the substrate to the housing; mounting holes are provided in the substrate and the housing, and the housing is attached to the substrate by inserting a tubular interposer into the mounting hole of the housing and abutting a lower end side of the interposer against one surface of the substrate, and then inserting the mounting fixture into a through-hole inside the interposer and the mounting hole of the substrate and fastening them together; a damage prevention portion for preventing damage to the insulating layer at the lower end side of the inclusion caused by attaching the substrate with the attachment tool is provided at a portion where the substrate is attached to the housing; A semiconductor module characterized in that a resilient elastic member is provided between the lower end side of the inclusion and one surface side of the substrate, which abut through the insulating layer, and the elastic member serves as the damage prevention part.

4. A semiconductor module as described in Claim 3, characterized in that the elasticity of the elastic member gradually increases as it moves from the lower end side of the inclusion to one surface side of the substrate.

5. 4. The semiconductor module according to claim 3, wherein the elastic member is made of a material whose elasticity increases with an increase in temperature.

6. 4. The semiconductor module according to claim 3, wherein a metal foil is provided on one side of the substrate via an insulating layer, and a heat sink for dissipating heat from the substrate is provided on the other side of the substrate, the design temperature is set to be lower than the heat resistance temperature of the circuit in the insulating layer and the metal foil and corresponding to the elasticity of the elastic member required to relieve the stress of the inclusion on the insulating layer, and the surface area of ​​the heat sink is set to provide a heat dissipation amount corresponding to the design temperature.

7. A semiconductor module described in any one of claims 1 to 3, characterized in that the portion on one side of the substrate where the substrate is attached is a cut portion where the insulating layer is cut, and the cut portion is the damage prevention portion.

8. 4. The semiconductor module according to claim 1, wherein a space is provided inside the edge of the housing into which the insulating layer fits.

9. the intermediate member is inserted into a mounting hole in an edge portion of the housing and fixed at a predetermined insertion position; Furthermore, when the interposer is fixed in the mounting hole, the lower end protrudes a predetermined amount from the lower end side of the edge of the housing, and the protruding height of the lower end side of the interposer from the lower end side of the edge of the housing is set to be greater than the thickness of the insulating layer, and when the lower end side of the interposer is abutted against one side of the substrate while forming the cut portion, a space into which the insulating layer enters is formed between the one side of the substrate and the lower end side of the edge of the housing, and the insulating layer is provided on the one side of the substrate so as to enter the space.

10. the intermediate member is inserted into a mounting hole in an edge portion of the housing and fixed at a predetermined insertion position; Furthermore, when the interposer is fixed in the mounting hole, the lower end side protrudes a predetermined amount from the lower end side of the edge of the housing, and the protruding height of the lower end side of the interposer from the lower end side of the edge of the housing is set to be greater than the thickness of the metal foil, and when the lower end side of the interposer is abutted against one side of the substrate via the insulating layer, a space into which the metal foil enters is formed between the one side of the substrate and the lower end side of the edge of the housing, and the metal foil is provided on the one side of the substrate so as to enter the space.

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