Separation layer-forming composition, support substrate with separation layer, laminate and method for producing same, and method for producing electronic component

Abstract

To provide a separation layer forming composition and the like, the separation layer forming composition being capable of forming a separation layer having improved photoreactivity and improving the separability of a supporting base from a laminate, in the laminate including the separation layer between the supporting base and a substrate.SOLUTION: In a laminate 10 including a separation layer 2 and an adhesive layer 3 between a supporting base 1 that transmits light and a substrate 4, a separation layer forming composition is adopted, the separation layer forming composition being modified by the irradiation with light from a supporting base side to form the separation layer that allows the supporting base to be separated from the laminate. The separation layer forming composition contains a resin component (P) having a repeating unit represented by general formula (p1). In general formula (p1), LP1 represents a divalent linking group, and RP1 represents a condensed polycyclic aromatic group that may have a substituent.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present invention relates to a separation layer-forming composition, a support substrate with a separation layer, a laminate and a method for producing the same, and a method for producing an electronic component. [Background technology]

[0002] Semiconductor packages (electronic components) containing semiconductor elements come in a variety of forms depending on the corresponding size, such as wafer level packages (WLPs) and panel level packages (PLPs). Semiconductor packaging technologies include fan-in technology and fan-out technology. Known semiconductor packages using fan-in technology include fan-in WLP (Fan-in Wafer Level Package), which rearranges terminals at the edge of a bare chip within the chip area. Known semiconductor packages using fan-out technology include fan-out WLP (Fan-out Wafer Level Package), which rearranges the terminals outside the chip area.

[0003] In recent years, fan-out technology in particular has been attracting attention as a method for achieving even higher integration, thinner size, and smaller size in semiconductor packages, for example by applying it to fan-out panel level packages (PLPs), which arrange semiconductor elements on a panel and package them.

[0004] In order to miniaturize semiconductor packages, it is important to reduce the thickness of the substrate in which the device is incorporated. However, reducing the thickness of the substrate reduces its strength, making the substrate more susceptible to damage during semiconductor package manufacturing. To address this issue, a laminated structure in which a supporting base is bonded to a substrate is used. Patent Document 1 discloses a method for producing a laminate in which a light-transmitting support base and a substrate are bonded together via a light-to-heat conversion layer (separation layer) and an adhesive layer provided on the support base side, the substrate is processed, and then radiant energy (light) is irradiated from the support base side onto the separation layer to alter and decompose the separation layer, thereby separating the processed substrate from the support base. [Prior art documents] [Patent documents]

[0005] [Patent Document 1] Japanese Patent Application Laid-Open No. 2004-64040 Summary of the Invention [Problem to be solved by the invention]

[0006] As described in Patent Document 1, when miniaturizing a semiconductor package by using a laminate in which a support base is bonded to a substrate, the separability of the support base from the laminate becomes an issue. The present invention has been made in consideration of the above circumstances, and has an object to provide a separation layer-forming composition that can form a separation layer in a laminate having a separation layer between a support base and a substrate, which has enhanced photoreactivity and improved separability of the support base from the laminate, a support base with a separation layer using the same, a laminate and a method for manufacturing the same, and a method for manufacturing electronic components. [Means for solving the problem]

[0007] In order to solve the above problems, the present invention employs the following configuration. That is, a first aspect of the present invention is a separation layer-forming composition for forming a separation layer in a laminate having a separation layer between a light-transmitting supporting base and a substrate, the separation layer being altered by irradiation of light from the supporting base side to enable separation of the supporting base from the laminate, characterized in that the separation layer-forming composition contains a resin component (P) having a repeating unit represented by the following general formula (p1):

[0008] [ka] [In the formula, L P1 represents a divalent linking group. P1 represents a fused polycyclic aromatic group which may have a substituent.]

[0009] A second aspect of the present invention is a support base with a separation layer, characterized by comprising a support base and a separation layer formed on the support base using the separation layer-forming composition according to the first aspect.

[0010] A third aspect of the present invention is a laminate having a separation layer between a light-transmitting supporting base and a substrate, characterized in that the separation layer is a fired body of the separation layer-forming composition according to the first aspect.

[0011] A fourth aspect of the present invention is a method for producing a laminate having a separation layer between a light-transmitting supporting base and a substrate, the method comprising: a separation layer forming step of applying a separation layer-forming composition according to the first aspect to at least one of the substrate or the supporting base, and then baking the composition to form the separation layer; and a lamination step of laminating the substrate and the supporting base together with the separation layer interposed therebetween.

[0012] A fifth aspect of the present invention is a method for producing an electronic component, characterized by comprising: a separation step of obtaining a laminate by the laminate production method according to the fourth aspect, irradiating the separation layer with light through the support base to alter the separation layer, thereby separating the support base from the laminate; and a removal step of removing the separation layer adhering to the substrate after the separation step. [Effects of the Invention]

[0013] According to the present invention, it is possible to provide a separation layer-forming composition that can form a separation layer in a laminate having a separation layer between a support base and a substrate, which has enhanced photoreactivity and improved separability of the support base from the laminate, a support base with a separation layer using the same, a laminate and a method for manufacturing the same, and a method for manufacturing electronic components. [Brief explanation of the drawings]

[0014] [Figure 1] 1 is a schematic diagram showing an embodiment of a laminate to which the present invention is applied. [Figure 2] 2A and 2B are schematic process diagrams illustrating one embodiment of a method for producing a laminate, in which Fig. 2A is a diagram illustrating a separation layer forming step, and Fig. 2B is a diagram illustrating a lamination step. [Figure 3] 3A and 3B are schematic process diagrams illustrating another embodiment of the method for manufacturing a laminate, in which Fig. 3A is a diagram showing the laminate manufactured by the manufacturing method of the first embodiment, and Fig. 3B is a diagram illustrating the sealing step. [Figure 4] 4A and 4B are schematic process diagrams illustrating another embodiment of a manufacturing method for a laminate, in which Fig. 4A is a diagram illustrating a sealed body manufactured by the manufacturing method of the second embodiment, Fig. 4B is a diagram illustrating a grinding step, and Fig. 4C is a diagram illustrating a rewiring formation step. [Figure 5] 5A and 5B are schematic process diagrams illustrating one embodiment of a manufacturing method for a semiconductor package (electronic component). Fig. 5A is a diagram showing a stack manufactured by a manufacturing method of a third embodiment, Fig. 5B is a diagram illustrating a separation step, and Fig. 5C is a diagram illustrating a removal step. [Figure 6] 6A and 6B are schematic process diagrams illustrating another embodiment of a method for manufacturing a semiconductor package (electronic component). Fig. 6A is a schematic diagram showing another embodiment of a laminate to which the present invention is applied, Fig. 6B is a diagram illustrating the separation step, and Fig. 6C is a diagram illustrating the removal step. DETAILED DESCRIPTION OF THE INVENTION

[0015] In this specification and claims, the term "aliphatic" is defined as a relative concept to aromatic, and refers to groups, compounds, etc. that do not have aromaticity. Unless otherwise specified, the term "alkyl group" includes linear, branched, and cyclic monovalent saturated hydrocarbon groups. The same applies to alkyl groups in alkoxy groups. Unless otherwise specified, the term "alkylene group" includes linear, branched and cyclic divalent saturated hydrocarbon groups. A "halogenated alkyl group" is an alkyl group in which some or all of the hydrogen atoms have been substituted with halogen atoms, and examples of the halogen atoms include fluorine, chlorine, bromine, and iodine atoms. The term "fluorinated alkyl group" refers to an alkyl group in which some or all of the hydrogen atoms have been substituted with fluorine atoms. The term "repeating unit" refers to a monomer unit that constitutes a polymeric compound (resin, polymer, copolymer). The phrase "may have a substituent" includes both the case where a hydrogen atom (-H) is replaced with a monovalent group and the case where a methylene group (-CH2-) is replaced with a divalent group.

[0016] The term "styrene" includes styrene and styrene in which the hydrogen atom at the α-position is substituted with other substituents such as an alkyl group or a halogenated alkyl group. Unless otherwise specified, the α-position (the carbon atom at the α-position) refers to the carbon atom to which the benzene ring is bonded.

[0017] The alkyl group as the substituent at the α-position is preferably a linear or branched alkyl group, and specific examples thereof include alkyl groups having 1 to 5 carbon atoms (methyl group, ethyl group, propyl group, isopropyl group, n-butyl group, isobutyl group, tert-butyl group, pentyl group, isopentyl group, neopentyl group, etc.). Specific examples of the halogenated alkyl group as a substituent at the α-position include groups in which some or all of the hydrogen atoms of the above-mentioned "alkyl group as a substituent at the α-position" have been substituted with halogen atoms. Examples of the halogen atom include a fluorine atom, a chlorine atom, a bromine atom, and an iodine atom, with a fluorine atom being particularly preferred.

[0018] In this specification and claims, some structures represented by chemical formulas may have asymmetric carbon atoms, and may exist as enantiomers or diastereomers. In such cases, a single chemical formula represents all isomers. These isomers may be used alone or as a mixture.

[0019] (Composition for forming separation layer) The separation layer-forming composition according to a first aspect of the present invention is for forming a separation layer between a light-transmitting support base and a substrate, the separation layer being altered by irradiation of light from the support base side to enable separation of the support base from the laminate. The separation layer-forming composition of this embodiment contains at least a resin component (P) having a repeating unit represented by general formula (p1).

[0020] FIG. 1 shows an embodiment of a laminate to which the present invention is applied. The laminate 10 shown in Figure 1 has a separation layer 2 and an adhesive layer 3 between a support base 1 and a substrate 4, with the separation layer 2, adhesive layer 3, and substrate 4 laminated in this order on the support base 1. The support base 1 is made of a light-transmitting material. In the laminate 10, when the separation layer 2 is irradiated with light from the support base 1 side, the separation layer 2 is altered and decomposed, and the support base 1 is separated from the laminate 10. The separation layer 2 in this laminate 10 can be formed using the separation layer-forming composition of this embodiment.

[0021] <Resin component (P)> Resin component (P) (hereinafter also referred to as "component (P)") is a resin component having a repeating unit represented by general formula (p1). The component (P) is a fused polycyclic aromatic group (R P1 ) in the repeating unit. This enhances the laser reactivity and photoreactivity of the separation layer formed from the separation layer-forming composition containing the component (P), thereby improving the separability of the supporting substrate from the laminate. In addition, the (P) component contains a divalent linking group (L P1 ) in the repeating unit. Therefore, the component (P) is easily altered (oxidized, etc.) by heating, etc. A separation layer formed from a separation layer-forming composition containing such component (P) has enhanced light absorption and excellent photoreactivity.

[0022] In FIG. 1, in the laminate 10 having the separation layer 2 formed using the separation layer-forming composition containing the component (P), the separation layer 2 is altered by irradiation of light from the support base 1 side, and is easily peeled off from the substrate 4, separating the support base 1. Furthermore, when the separation layer 2 containing the component (P) is peeled off from the substrate 4, little residue remains on the substrate 4, and it is easily removable from the substrate 4. In addition, the component (P) has a divalent linking group (L P1 By having (P) in the repeating unit, the separating layer 2 containing the component (P) has improved heat resistance and also high chemical resistance. Furthermore, since the component (P) has strong laser reactivity, laser damage to the separation layer 2 containing the component (P) is suppressed, and the laser intensity can be increased, thereby shortening the process time.

[0023] The component (P) may contain other repeating units in addition to the repeating unit represented by general formula (p1).

[0024] <Repeating unit represented by general formula (p1)> The component (P) has a repeating unit represented by the following general formula (p1) (hereinafter also referred to as "repeating unit (p1)").

[0025] [ka] [In the formula, L P1 represents a divalent linking group. P1 represents a fused polycyclic aromatic group which may have a substituent.]

[0026] In the formula (p1), L P1 The divalent linking group in may contain an aromatic ring, may contain multiple types of aromatic rings, or may contain a ring structure in which an aromatic ring and an aliphatic ring are condensed. L P1 When the divalent linking group in the formula (I) contains an aromatic ring, the aromatic ring is not particularly limited as long as it is a cyclic conjugated system having 4n+2 π electrons, and may be monocyclic or polycyclic. The aromatic ring preferably has 5 to 30 carbon atoms, more preferably 5 to 20 carbon atoms, still more preferably 6 to 15 carbon atoms, and particularly preferably 6 to 12 carbon atoms. Specific examples of the aromatic ring include aromatic hydrocarbon rings such as benzene, naphthalene, anthracene, and phenanthrene; and aromatic heterocycles in which some of the carbon atoms constituting the aromatic hydrocarbon ring are substituted with heteroatoms. Examples of heteroatoms in the aromatic heterocycle include oxygen atoms, sulfur atoms, and nitrogen atoms. Specific examples of the aromatic heterocycle include pyridine rings and thiophene rings. The divalent linking group may contain one aromatic ring or two or more aromatic rings, and two or more aromatic rings are preferred because they provide better photoreactivity.

[0027] Alternatively, in the formula (p1), L P1 The divalent linking group in L is preferably a divalent linking group containing a hetero atom. p1 Examples of the linking group include linking groups into which various skeletons have been introduced in order to impart desired properties. Examples of the skeleton in the "linking group having various skeletons introduced therein" include a naphthalene skeleton, an anthracene skeleton, a xanthene skeleton, a fluorene skeleton, and a bisphenol A skeleton.

[0028] L p1Examples of such groups include ether bond groups of bisphenols, ether bond groups of diols, ester bond groups of dicarboxylic acids, Si—O bond groups, and repeating structures of these bond groups.

[0029] Examples of the bisphenols include bisphenol F, bisphenol A, bisphenol Z, biphenol, and polymers thereof. Examples of the diols include ethylene glycol, propylene glycol, 1,6-hexanediol, neopentyl glycol, naphthalenediol (dihydroxynaphthalene), anthracenediol (dihydroxyanthracene), 2,2-bis(4-hydroxyphenyl)propane, and polymers thereof. Examples of the dicarboxylic acids include maleic acid, phthalic acid, hydrogenated phthalic acid, and terephthalic acid.

[0030] L p1 When an ether bond group of a bisphenol is selected as the hydroxyl group, the flexibility of the film made from the component (P) tends to be improved. L p1 When an ether-linked group of a diol is selected as the linking group, the alkali solubility of component (P) can be easily adjusted. As the ether-linked group of a diol, a linking group incorporating a glycol skeleton is preferred. Examples of glycol skeletons include propylene glycol skeletons. L p1 When an Si—O bond group is selected as the hydroxyl group, it becomes easier to achieve a low dielectric constant for the molded article of component (P).

[0031] Hereinafter, L in the formula (p1) will be P1 Preferred specific examples of (divalent linking group) are shown below. In the following formula, * indicates a bond that bonds to a methylene group (CH2). P1 -9) n represents the number of repetitions of the oxypropylene group.

[0032] [ka]

[0033] In the formula (p1), R P1 is a fused polycyclic aromatic group which may have a substituent. R P1 The fused polycyclic aromatic group in the formula (I) is a group in which one hydrogen atom has been removed from a fused polycyclic aromatic ring. This fused polycyclic aromatic ring may be a ring structure in which multiple aromatic rings are fused, or a ring structure in which an aromatic ring and an aliphatic ring are fused. In the ring structure in which an aromatic ring and an aliphatic ring are fused, there may be multiple aromatic rings, multiple aliphatic rings, or one aromatic ring and one aliphatic ring. The number of rings constituting this fused polycyclic aromatic ring is preferably 2 to 5, more preferably 2 to 3, and even more preferably 3.

[0034] In the formula (p1), R P1 Examples of the substituent that the fused polycyclic aromatic group in the formula (I) may have include a hydroxy group, a carboxy group, a halogen atom (a fluorine atom, a chlorine atom, a bromine atom, etc.), an alkoxy group (a methoxy group, an ethoxy group, a propoxy group, a butoxy group, etc.), an alkyloxycarbonyl group, an oxo group (═O), etc. Also, R P1 The hydrocarbon group in the condensed polycyclic aromatic group may have an ether bond in the middle of the hydrocarbon chain.

[0035] R P1 Examples of the ring include a group in which one hydrogen atom has been removed from a naphthalene ring, an azulene ring, an anthracene ring, a phenanthrene ring, a pyrene ring, a chrysene ring, a triphenylene ring, a perylene ring, an anthraquinone ring, or a naphthoquinone ring. Among these, R P1 As the alkyl group, a group in which one hydrogen atom has been removed from an anthraquinone ring or a naphthoquinone ring is preferred, and a group in which one hydrogen atom has been removed from an anthraquinone ring is more preferred.

[0036] Preferred specific examples of the repeating unit (p1) are shown below: n1 in the chemical formula (p1-6) represents the number of repeats of the oxypropylene group.

[0037] [ka]

[0038] [ka]

[0039] The repeating unit (p1) contained in the component (P) may be of one type or two or more types. The proportion of repeating units (p1) in component (P) is preferably at least 1 mol % and may be 1 to 100 mol % based on the total (100 mol %) of all repeating units constituting component (P).

[0040] When the component (P) has other repeating units in addition to the repeating unit (p1), the proportion of the repeating unit (p1) in the component (P) is preferably 1 to 99 mol %, more preferably 1 to 70 mol %, and even more preferably 1 to 50 mol %, relative to the total (100 mol %) of all repeating units constituting the component (P). When the proportion of the repeating unit (p1) is equal to or greater than the lower limit of the preferred range, the laser reactivity is likely to be enhanced, whereas when the proportion is equal to or less than the upper limit of the preferred range, it is easy to achieve a good balance with other repeating units.

[0041] Other repeating units The component (P) may contain other repeating units in addition to the repeating unit (p1) described above. Examples of other repeating units include repeating units represented by general formula (p2) described below.

[0042] Regarding the repeating unit represented by general formula (p2): The component (P) is preferably a resin having, in addition to the repeating unit (p1) described above, a repeating unit represented by the following general formula (p2) (hereinafter also referred to as "repeating unit (p2)").

[0043] [ka] [In the formula, L P2 represents a divalent linking group. P2 represents a monocyclic aromatic group which may have a substituent.]

[0044] In the above formula (p2), L P2 The explanation for this is given in the above formula (p1) P1 The same applies to the divalent linking group in the above. L P2 Preferred specific examples of the (divalent linking group) include the group represented by the above chemical formula (L P1 -1)~(L P1 -9) are the same as the linking groups represented by the formulas.

[0045] In the formula (p2), R P2 The monocyclic aromatic group in the above formula is a hydrocarbon group containing one aromatic ring. This aromatic ring may be a cyclic conjugated system with 4n+2 π electrons. R P2 Specific examples of aromatic rings constituting the monocyclic aromatic group in R include a benzene ring, a pyridine ring, a thiophene ring, a pyrrole ring, an imidazole ring, a furan ring, and a thiazole ring. P2 is preferably a group in which one hydrogen atom has been removed from a benzene ring.

[0046] The above R P2 When the hydrocarbon group represented by the formula (I) is substituted, examples of the substituent include a hydroxy group, a carboxy group, a halogen atom (a fluorine atom, a chlorine atom, a bromine atom, etc.), an alkoxy group (a methoxy group, an ethoxy group, a propoxy group, a butoxy group, etc.), an alkyloxycarbonyl group, etc.

[0047] Preferred specific examples of the repeating unit (p2) are shown below: n2 in the chemical formula (p2-6) represents the number of repeats of the oxypropylene group.

[0048] [ka]

[0049] When the component (P) has a repeating unit (p2), the repeating unit (p2) may be of one type or of two or more types. When the component (P) has the repeating unit (p2), the proportion of the repeating unit (p2) in the component (P) is preferably 1 to 99 mol%, more preferably 30 to 99 mol%, and even more preferably 50 to 99 mol%, relative to the total (100 mol%) of all repeating units constituting the component (P). When the proportion of the repeating unit (p2) is at least the lower limit of the above-mentioned preferred range, the photoreactivity is likely to be enhanced, whereas when the proportion is at most the upper limit of the above-mentioned preferred range, it is easy to achieve a balance with the repeating unit (p1).

[0050] In the separation layer-forming composition of this embodiment, the component (P) is a resin having at least the repeating unit (p1). The component (P) may be a resin consisting of only the repeating unit (p1). A preferred example of the component (P) is a resin having repeating units (p1) and (p2). In this case, the molar ratio of repeating units (p1) to repeating units (p2) in the resin is preferably repeating units (p1): repeating units (p2) = 1:99 to 99:1, more preferably 1:99 to 70:30, and even more preferably 1:99 to 50:50.

[0051] Alternatively, component (P) may be a mixed resin of a resin having at least the repeating unit (p1) and a resin consisting only of the repeating unit (p2). In this case, the proportion of the repeating unit (p1) relative to the total (100 mol%) of all repeating units constituting the mixed resin is preferably 1 to 99 mol%, more preferably 1 to 70 mol%, and even more preferably 1 to 50 mol%. The molar ratio of all repeating units (p1) to all repeating units (p2) constituting the mixed resin is preferably 1:99 to 99:1, more preferably 1:99 to 70:30, and even more preferably 1:99 to 50:50.

[0052] The component (P) has film-forming ability and preferably has a molecular weight of at least 1000. The film-forming ability is improved when the molecular weight of the component (P) is at least 1000. The molecular weight of the component (P) is more preferably 1000 to 30000, further preferably 1500 to 25000, particularly preferably 1500 to 20000, and most preferably 2000 to 15000. When the molecular weight of the component (P) is equal to or less than the upper limit of the above-mentioned preferred range, the solubility of the separation layer-forming composition in a solvent is increased. The molecular weight of the resin component is determined by GPC (gel permeation chromatography) as a weight average molecular weight (Mw) converted to polystyrene.

[0053] As the component (P), for example, the GSP series (manufactured by Gunei Chemical Industry Co., Ltd.) with trade names GSP-112, GSP-113, and GSP-117 can be used.

[0054] Furthermore, as the component (P), a resin produced by reacting aminoanthraquinone or aminonaphthoquinone with an aminophenol, an aminonaphthol, or an aniline, and a compound having two epoxy groups in one molecule can also be used. Examples of aminophenols include 2-aminophenol, 3-aminophenol, 4-aminophenol, 4-amino-3-methylphenol, 2-amino-4-methylphenol, 3-amino-2-methylphenol, 5-amino-2-methylphenol, etc. Examples of aminonaphthols include 1-amino-2-naphthol, 3-amino-2-naphthol, 5-amino-1-naphthol, etc. Examples of compounds having two epoxy groups per molecule include bisphenol-type epoxy resins such as EPICLON850 and EPICLON830 (manufactured by DIC Corporation) and jERYX-4000 (manufactured by Mitsubishi Chemical Corporation); diol-type epoxy resins such as DENACOL EX-211, DENACOL EX-212, DENACOL EX-810, DENACOL EX-830, DENACOL EX-911, DENACOL EX-920, and DENACOL EX-930 (manufactured by Nagase ChemteX Corporation); dicarboxylic acid ester-type epoxy resins such as DENACOL EX-711, DENACOL EX-721 (manufactured by Nagase ChemteX Corporation) and jER191P (manufactured by Mitsubishi Chemical Corporation); and silicone-type epoxy resins such as X-22-163 and KF-105 (manufactured by Shin-Etsu Chemical Co., Ltd.). The heat treatment temperature during this reaction is preferably 60°C or higher and 250°C or lower, and more preferably 80°C or higher and 180°C or lower.

[0055] The component (P) contained in the separation layer-forming composition of the present embodiment may be one type or two or more types. The content of the component (P) in the separation layer-forming composition of this embodiment may be adjusted depending on the thickness of the separation layer to be formed, etc. The content of the (P) component in the separation layer-forming composition is, for example, preferably 1 to 100 mass%, more preferably 1 to 70 mass%, even more preferably 5 to 50 mass%, and particularly preferably 10 to 50 mass%, relative to the composition (100 mass%). When the content of the (P) component is equal to or greater than the lower limit of the preferred range, the photoreactivity of the separation layer is likely to be enhanced. In addition, the chemical resistance is likely to be enhanced. On the other hand, when the content is equal to or less than the upper limit of the preferred range, the photoreactivity and peelability are likely to be enhanced.

[0056] <Other ingredients> The separation layer-forming composition of the present embodiment may further contain components (optional components) other than the above-mentioned component (P). Such optional components include resins other than the component (P) shown below, thermal acid generator components, photoacid generator components, photosensitizer components, organic solvent components, surfactants, sensitizers, and the like.

[0057] The separation layer-forming composition of this embodiment may contain a resin other than the component (P) as long as the effects of the present invention are not impaired. Examples of resins other than component (P) include novolac phenolic resins, resol phenolic resins, hydroxystyrene resins, hydroxyphenyl silsesquioxane resins, hydroxybenzyl silsesquioxane resins, and phenol skeleton-containing acrylic resins. By using a novolac phenolic resin as a resin other than component (P) in combination with component (P), it becomes easier to suppress the generation of voids due to heating.

[0058] <Thermal acid generator> The separation layer-forming composition of this embodiment preferably further contains a thermal acid generator (hereinafter also referred to as "component (T)"). When such a composition for forming a separation layer contains the (T) component, oxidation of the separation layer is promoted by the action of the acid generated from the (T) component during heating, etc., during firing, and the separation layer becomes more susceptible to deterioration by exposure to light (the photoreactivity of the separation layer is increased).

[0059] The component (T) can be appropriately selected from known compounds, and the temperature at which the acid is generated is preferably equal to or higher than the temperature at which the support substrate coated with the separation layer-forming composition is prebaked, more preferably 110°C or higher, and even more preferably 130°C or higher. Examples of such component (T) include trifluoromethanesulfonate, hexafluorophosphate, perfluorobutanesulfonate, boron trifluoride salt, boron trifluoride ether complex compound, etc. Preferred examples of component (T) include compounds consisting of a cation moiety and an anion moiety shown below.

[0060] [ka] [In formula (T-ca-1), R h01 ~R h04 are each independently a group selected from the group consisting of a hydrogen atom, an alkyl group having 1 to 20 carbon atoms, and an aryl group, and R h01 ~R h04 At least one of R is an aryl group. The alkyl group or aryl group may have a substituent. h05 ~R h07 are each independently a group selected from the group consisting of alkyl groups and aryl groups having 1 to 20 carbon atoms, and R h05 ~R h07 At least one of the alkyl group and the aryl group may have a substituent.

[0061] ·About the cation part of the (T) component In the above formula (T-ca-1), R h01 ~R h04 The alkyl group in the formula (I) has 1 to 20 carbon atoms, preferably 1 to 10 carbon atoms, more preferably 1 to 5 carbon atoms, and even more preferably a linear or branched alkyl group having 1 to 5 carbon atoms. Specific examples include a methyl group, an ethyl group, a propyl group, an isopropyl group, an n-butyl group, an isobutyl group, a tert-butyl group, a pentyl group, an isopentyl group, and a neopentyl group, and among these, a methyl group and an ethyl group are preferred.

[0062] R h01 ~R h04 The alkyl group in may have a substituent, such as an alkoxy group, a halogen atom, a halogenated alkyl group, a hydroxyl group, a carbonyl group, a nitro group, an amino group, or a cyclic group.

[0063] The alkoxy group as a substituent of the alkyl group is preferably an alkoxy group having 1 to 5 carbon atoms, more preferably a methoxy group, an ethoxy group, an n-propoxy group, an iso-propoxy group, an n-butoxy group, or a tert-butoxy group, and still more preferably a methoxy group or an ethoxy group. Examples of the halogen atom as a substituent of the alkyl group include a fluorine atom, a chlorine atom, a bromine atom, and an iodine atom, with a fluorine atom being preferred. Examples of halogenated alkyl groups as substituents on alkyl groups include alkyl groups having 1 to 5 carbon atoms, such as methyl, ethyl, propyl, n-butyl, and tert-butyl groups, in which some or all of the hydrogen atoms have been substituted with the above-mentioned halogen atoms. A carbonyl group as a substituent of an alkyl group is a group (>C=O) that replaces a methylene group (-CH2-) that constitutes the alkyl group. Examples of the cyclic group as a substituent of the alkyl group include an aromatic hydrocarbon group and an alicyclic hydrocarbon group (which may be polycyclic or monocyclic). The aromatic hydrocarbon group here is a group represented by R h01 ~R h04 Examples of the aryl group include those similar to those in the aryl group in (1). In the alicyclic hydrocarbon group herein, the monocyclic alicyclic hydrocarbon group is preferably a group in which one or more hydrogen atoms have been removed from a monocycloalkane. The monocycloalkane preferably has 3 to 6 carbon atoms, and specific examples thereof include cyclopentane and cyclohexane. Furthermore, the polycyclic alicyclic hydrocarbon group is preferably a group in which one or more hydrogen atoms have been removed from a polycycloalkane, and the polycycloalkane preferably has 7 to 30 carbon atoms. Among these, the polycycloalkane is more preferably a polycycloalkane having a bridged ring polycyclic skeleton, such as adamantane, norbornane, isobornane, tricyclodecane, or tetracyclododecane; or a polycycloalkane having a fused ring polycyclic skeleton, such as a cyclic group having a steroid skeleton.

[0064] In the above formula (T-ca-1), R h01 ~R h04 The aryl group in the formula (I) is a hydrocarbon group having at least one aromatic ring. The aromatic ring is not particularly limited as long as it is a cyclic conjugated system having 4n+2 π electrons, and may be monocyclic or polycyclic. The aromatic ring preferably has 5 to 30 carbon atoms, more preferably 5 to 20 carbon atoms, further preferably 6 to 15 carbon atoms, and particularly preferably 6 to 12 carbon atoms. Specific examples of the aromatic ring include aromatic hydrocarbon rings such as benzene, naphthalene, anthracene, and phenanthrene; and aromatic heterocycles in which some of the carbon atoms constituting the aromatic hydrocarbon ring are substituted with heteroatoms. Examples of heteroatoms in the aromatic heterocycle include oxygen atoms, sulfur atoms, and nitrogen atoms. Specific examples of the aromatic heterocycle include pyridine rings and thiophene rings. R h01 ~R h04 Specific examples of the aryl group in the above include a group in which one hydrogen atom has been removed from the aromatic hydrocarbon ring or aromatic heterocycle; a group in which one hydrogen atom has been removed from an aromatic compound containing two or more aromatic rings (e.g., biphenyl, fluorene, etc.); and a group in which one hydrogen atom of the aromatic hydrocarbon ring or aromatic heterocycle has been substituted with an alkylene group (e.g., arylalkyl groups such as benzyl, phenethyl, 1-naphthylmethyl, 2-naphthylmethyl, 1-naphthylethyl, and 2-naphthylethyl). The number of carbon atoms in the alkylene group bonded to the aromatic hydrocarbon ring or aromatic heterocycle is preferably 1 to 4, more preferably 1 to 2, and particularly preferably 1. Among these, a group in which one hydrogen atom has been removed from the aromatic hydrocarbon ring or aromatic heterocycle, or a group in which one hydrogen atom of the aromatic hydrocarbon ring or aromatic heterocycle has been substituted with an alkylene group is more preferred, and a group in which one hydrogen atom has been removed from the aromatic hydrocarbon ring or a group in which one hydrogen atom of the aromatic hydrocarbon ring has been substituted with an alkylene group is even more preferred.

[0065] R h01 ~R h04 The aryl group in may have a substituent, such as an alkyl group, an alkoxy group, a halogen atom, a halogenated alkyl group, a hydroxyl group, a carbonyl group, a nitro group, an amino group, a cyclic group, or an alkylcarbonyloxy group.

[0066] The alkyl group as a substituent of the aryl group is preferably an alkyl group having 1 to 5 carbon atoms, and is preferably a methyl group, an ethyl group, a propyl group, an n-butyl group, or a tert-butyl group. The explanations about the alkoxy group, halogen atom, halogenated alkyl group, carbonyl group, and cyclic group as the substituent of the aryl group are the same as the explanations about the alkoxy group, halogen atom, halogenated alkyl group, carbonyl group, and cyclic group as the substituent of the alkyl group described above. In the alkylcarbonyloxy group as a substituent of an aryl group, the alkyl moiety preferably has 1 to 5 carbon atoms, and examples of the alkyl moiety include a methyl group, an ethyl group, a propyl group, and an isopropyl group. Among these, a methyl group and an ethyl group are preferred, and a methyl group is more preferred.

[0067] However, in the above formula (T-ca-1), R h01 ~R h04 At least one of the groups is an aryl group which may have a substituent. Specific examples of the cation represented by the formula (T-ca-1) are shown below.

[0068] [ka]

[0069] In the above formula (T-ca-2), R h05 ~R h07 The alkyl group and aryl group in h01 ~R h04 The same applies to the alkyl and aryl groups described above.

[0070] However, in the above formula (T-ca-2), R h05 ~R h07 At least one of the groups is an aryl group which may have a substituent. Specific examples of the cation represented by the formula (T-ca-2) are shown below.

[0071] [ka]

[0072] ·About the anion part of the (T) component Examples of the anion moiety of the component (T) include a hexafluorophosphate anion, a trifluoromethanesulfonate anion, a perfluorobutanesulfonate anion, and a tetrakis(pentafluorophenyl)borate anion. Among these, hexafluorophosphate anion, trifluoromethanesulfonate anion, and perfluorobutanesulfonate anion are preferred, and hexafluorophosphate anion and trifluoromethanesulfonate anion are more preferred.

[0073] In the separation layer-forming composition of this embodiment, examples of the component (T) include San-Aid SI-45, SI-47, SI-60, SI-60L, SI-80, SI-80L, SI-100, SI-100L, SI-110, SI-110L, SI-145, SI-150, SI-160, SI-180L, SI-B3, SI-B2A, SI-B3A, SI-B4, and SI-300 (all manufactured by Sanshin Chemical Industry Co., Ltd.); CI-2921, CI-2920, CI-2946, CI-3128, CI-2624, CI-2639, and CI-2064 (manufactured by Nippon Soda Co., Ltd.); CP-66 and CP-77 (manufactured by ADEKA Corporation); FC-520 (manufactured by 3M); and K-PURE TAG-2396, TAG-2713S, TAG-2713, TAG-2172, TAG-2179, TAG-2168E, TAG-2722, TAG-2507, TAG-2 678, TAG-2681, TAG-2679, TAG-2689, TAG-2690, TAG-2700, TAG-2710, TAG-2100, CDX-3027, CXC- 1615, CXC-1616, CXC-1750, CXC-1738, CXC-1614, CXC-1742, CXC-1743, CXC-1613, CXC-1739, CX C-1751, CXC-1766, CXC-1763, CXC-1736, CXC-1756, CXC-1821, CXC-1802-60, CXC-2689 (and above, KING Commercially available products such as INDUSTRY) can be used.

[0074] The component (T) contained in the separation layer-forming composition of the present embodiment may be one type or two or more types. In the separation layer-forming composition of this embodiment, among the above, hexafluorophosphate, trifluoromethanesulfonate, and perfluorobutanesulfonate are preferred as component (T), with trifluoromethanesulfonate being more preferred, and a quaternary ammonium salt of trifluoromethanesulfonic acid being even more preferred. When the separation layer-forming composition of this embodiment contains the (T) component, the content of the (T) component is preferably 0.01 to 20 parts by mass, more preferably 1 to 15 parts by mass, and even more preferably 2 to 10 parts by mass, per 100 parts by mass of the (P) component. When the content of the (T) component is within the above-mentioned preferred range, the separation layer is easily altered by light irradiation (the photoreactivity of the separation layer is enhanced). For example, by firing, a fired body that can effectively absorb light in the wavelength range of 600 nm or less can be easily formed. In addition, chemical resistance is further improved.

[0075] <Photoacid generator> The separation layer-forming composition of this embodiment may further contain a photoacid generator. When the composition for forming the separation layer contains a photoacid generator, the oxidation of the separation layer is accelerated by the action of the acid generated from the photoacid generator when heated during firing, etc., as in the case where the composition contains the (T) component, as described above, and therefore the separation layer becomes more susceptible to deterioration by exposure to light (the photoreactivity of the separation layer is increased). Suitable examples of photoacid generators include onium salt-based acid generators such as sulfonium salts.

[0076] In the onium salt acid generator, preferred cation moieties include sulfonium cations and iodonium cations.

[0077] A preferred anion moiety in the onium salt acid generator is tetrakis(pentafluorophenyl)borate ([B(C6F5)4] - );Tetrakis[(trifluoromethyl)phenyl]borate ([B(C6H4CF3)4] -);Difluorobis(pentafluorophenyl)borate ([(C6F5)2BF2] - ); Trifluoro(pentafluorophenyl)borate ([(C6F5)BF3] - );Tetrakis(difluorophenyl)borate ([B(C6H3F2)4] - ) and the like. Anions represented by the following general formula (b0-2a) are also preferred.

[0078] [ka] [In the formula, R bf05 is a fluorinated alkyl group which may have a substituent. 1 is an integer between 1 and 5.

[0079] In the above formula (b0-2a), R bf05 The fluorinated alkyl group in R preferably has 1 to 10 carbon atoms, more preferably 1 to 8 carbon atoms, and even more preferably 1 to 5 carbon atoms. bf05 As the alkyl group, a fluorinated alkyl group having 1 to 5 carbon atoms is preferred, a perfluoroalkyl group having 1 to 5 carbon atoms is more preferred, and a trifluoromethyl group or a pentafluoroethyl group is even more preferred. In the above formula (b0-2a), nb 1 is preferably an integer of 1 to 4, more preferably an integer of 2 to 4, and most preferably 3. nb 1 If is 2 or more, multiple R bf05 may be the same or different from each other.

[0080] The separation layer-forming composition of the present embodiment may contain one type of photoacid generator or two or more types of photoacid generators. When the separation layer-forming composition of this embodiment contains a photoacid generator, the content of the photoacid generator is preferably 0.01 to 20 parts by mass, more preferably 1 to 15 parts by mass, and even more preferably 2 to 10 parts by mass, per 100 parts by mass of component (P). When the content of the photoacid generator is within the above-mentioned preferred range, the separation layer is easily altered by light irradiation (the photoreactivity of the separation layer is enhanced). For example, by firing, a fired body that can effectively absorb light in the wavelength range of 600 nm or less can be easily formed. In addition, chemical resistance is further improved.

[0081] <Photosensitizer ingredient> A suitable example of the photosensitizer component (hereinafter also referred to as "component (C)") is an esterification reaction product (hereinafter also referred to as "component (C1)") between a phenolic hydroxyl group-containing compound represented by the following chemical formula (c1) and a 1,2-naphthoquinone diazide sulfonic acid compound.

[0082] [ka]

[0083] Examples of the 1,2-naphthoquinone diazide sulfonic acid compound include a 1,2-naphthoquinone diazide-5-sulfonyl compound and a 1,2-naphthoquinone diazide-4-sulfonyl compound, and the 1,2-naphthoquinone diazide-5-sulfonyl compound is preferred.

[0084] Specific examples of suitable components (C1) are shown below.

[0085] [ka] [In formula (c1-1), D 1 ~D 4 each independently represents a hydrogen atom or a 1,2-naphthoquinonediazide-5-sulfonyl group. 1 ~D 4 At least one of the groups represents a 1,2-naphthoquinonediazide-5-sulfonyl group.

[0086] The esterification rate of the component (C1) is preferably 50 to 70%, more preferably 55 to 65%. When the esterification rate is 50% or more, film loss after alkaline development is further suppressed, and the residual film rate is increased. When the esterification rate is 70% or less, storage stability is further improved. The "esterification rate" here refers to the rate of esterification of the compound represented by formula (c1-1) when the D 1 ~D 4 The ratio of substituted 1,2-naphthoquinonediazide-5-sulfonyl groups is shown. The component (C1) is also preferred because it is very inexpensive and yet can achieve high sensitivity.

[0087] As the component (C), a photosensitizer component other than the component (C1) (hereinafter also referred to as "component (C2)") can be used. Suitable examples of the component (C2) include the esterification reaction product of the following phenolic hydroxyl group-containing compound (component (c2-phe)) and a 1,2-naphthoquinone diazide sulfonic acid compound (preferably a 1,2-naphthoquinone diazide-5-sulfonyl compound or a 1,2-naphthoquinone diazide-4-sulfonyl compound).

[0088] Examples of the (c2-phe) component include tris(4-hydroxyphenyl)methane, bis(4-hydroxy-3-methylphenyl)-2-hydroxyphenylmethane, bis(4-hydroxy-2,3,5-trimethylphenyl)-2-hydroxyphenylmethane, bis(4-hydroxy-3,5-dimethylphenyl)-4-hydroxyphenylmethane, bis(4-hydroxy-3,5-dimethylphenyl)-3-hydroxyphenylmethane, bis(4-hydroxy-3,5-dimethylphenyl)-2-hydroxyphenylmethane, Bis(4-hydroxy-2,5-dimethylphenyl)-4-hydroxyphenylmethane, bis(4-hydroxy-2,5-dimethylphenyl)-3-hydroxyphenylmethane, bis(4-hydroxy-2,5-dimethylphenyl)-2-hydroxyphenylmethane, bis(4-hydroxy-3,5-dimethylphenyl)-3,4-dihydroxyphenylmethane, bis(4-hydroxy-2,5-dimethylphenyl)-3,4-dihydroxyphenylmethane, bis(4-hydroxy-2,5-dimethylphenyl)-2,4-dihydroxy Phenylmethane, bis(4-hydroxyphenyl)-3-methoxy-4-hydroxyphenylmethane, bis(5-cyclohexyl-4-hydroxy-2-methylphenyl)-4-hydroxyphenylmethane, bis(5-cyclohexyl-4-hydroxy-2-methylphenyl)-3-hydroxyphenylmethane, bis(5-cyclohexyl-4-hydroxy-2-methylphenyl)-2-hydroxyphenylmethane, bis(5-cyclohexyl-4-hydroxy-2-methylphenyl)-3,4-dihydroxyphenylmethane, bis(2 ,3,5-trimethyl-4-hydroxyphenyl)-2-hydroxyphenylmethane, 1-[1-(4-hydroxyphenyl)isopropyl]-4-[1,1-bis(4-hydroxyphenyl)ethyl]benzene, 1-[1-(3-methyl-4-hydroxyphenyl)isopropyl]-4-[1,1-bis(3-methyl-4-hydroxyphenyl)ethyl]benzene, 2-(2,3,4-trihydroxyphenyl)-2-(2',3',4'-trihydroxyphenyl)propane, 2-(2,4-dihydroxyphenyl)-2-(2',4'-dihydroxyphenyl)propane, 2-(4-hydroxyphenyl)-2-(4'-hydroxyphenyl)propane, 2-(3-fluoro-4-hydroxyphenyl)-2-(3'-fluoro-4'-hydroxyphenyl)propane, 2-(2,4-dihydroxyphenyl)-2-(4'-hydroxyphenyl)propane, 2-(2,3,4-trihydroxyphenyl)-2-(4'-hydroxyphenyl)propane, 2-(2,3,4-trihydroxyphenyl)-2-(4'-hydroxy-3',5'-dimethylphenyl)propane, bis(2,3,4-trihydroxyphenyl)methane, bis(2,4-dihydroxyphenyl)methane, 2,3,4-trihydroxyphenyl-4'-hydroxyphenylmethane, 1,1-di(4-hydroxyphenyl)cyclohexane, 2,4-bis[1-(4-hydroxyphenyl)isopropyl]-5-hydroxyphenol, and the like.

[0089] The component (C) contained in the separation layer-forming composition of the present embodiment may use one type alone, or two or more types in combination. In the separation layer-forming composition of the present embodiment, it is preferable to use the component (C1) as the component (C) among the above. When the separation layer-forming composition of this embodiment contains the (C) component, the content of the (C) component is preferably 95 parts by mass or less, more preferably 50 to 95 parts by mass, and even more preferably 60 to 90 parts by mass, per 100 parts by mass of the (P) component. When the content of component (C) is within the above-mentioned preferred range, the photoreactivity of the separation layer is further enhanced.

[0090] <Organic solvent components> The separation layer-forming composition of this embodiment may contain an organic solvent component (hereinafter also referred to as "component (S)") in order to adjust the coating workability and the like. Examples of the (S) component include linear hydrocarbons such as hexane, heptane, octane, nonane, methyloctane, decane, undecane, dodecane, and tridecane; branched hydrocarbons having 4 to 15 carbon atoms; cyclic hydrocarbons such as cyclohexane, cycloheptane, cyclooctane, naphthalene, decahydronaphthalene, and tetrahydronaphthalene; p-menthane, o-menthane, m-menthane, diphenylmenthane, 1,4-terpine, 1,8-terpine, bornane, norbornane, pinane, thujane, carane, longifolene, geraniol, nerol, and limonene. Terpene solvents such as nalool, citral, citronellol, menthol, isomenthol, neomenthol, α-terpineol, β-terpineol, γ-terpineol, terpinen-1-ol, terpinen-4-ol, dihydroterpinyl acetate, 1,4-cineole, 1,8-cineole, borneol, carvone, ionone, thujone, camphor, d-limonene, l-limonene, and dipentene; lactones such as γ-butyrolactone; acetone, methyl ethyl ketone, cyclohexanone (CH), methyl-n-pentyl ketone, methyl ketones such as isopentyl ketone and 2-heptanone; polyhydric alcohols such as ethylene glycol, diethylene glycol, propylene glycol, and dipropylene glycol; compounds having an ester bond such as ethylene glycol monoacetate, diethylene glycol monoacetate, propylene glycol monoacetate, and dipropylene glycol monoacetate; derivatives of polyhydric alcohols such as monoalkyl ethers of the above polyhydric alcohols or compounds having an ester bond, such as monomethyl ether, monoethyl ether, monopropyl ether, and monobutyl ether, or monophenyl ether (among these, propylene glycol monomethyl ether acetate (PGMEA) and propylene glycol monomethyl ether (PGME) are preferred); cyclic ethers such as dioxane; and esters such as methyl lactate, ethyl lactate (EL), methyl acetate, ethyl acetate, butyl acetate, methoxypropyl acetate, methoxybutyl acetate, methyl pyruvate, ethyl pyruvate, methyl methoxypropionate, and ethyl ethoxypropionate;Examples of aromatic organic solvents include anisole, ethyl benzyl ether, cresyl methyl ether, diphenyl ether, dibenzyl ether, phenetole, and butyl phenyl ether. The component (S) contained in the separation layer-forming composition of the present embodiment may be one type or two or more types.

[0091] In the separation layer-forming composition of this embodiment, the amount of component (S) used is not particularly limited and is appropriately set depending on the coating film thickness and coatability at a concentration that allows application to a support substrate, etc. Preferably, component (S) is used so that the total amount of component (P) in the separation layer-forming composition is 70 mass % or less, more preferably in the range of 10 to 50 mass %, relative to the total mass (100 mass %) of the composition.

[0092] <Surfactants> The separation layer-forming composition of this embodiment may contain a surfactant in order to adjust the coating workability and the like. Examples of surfactants include silicone surfactants and fluorine surfactants. Examples of silicone surfactants that can be used include BYK-077, BYK-085, BYK-300, BYK-301, BYK-302, BYK-306, BYK-307, BYK-310, BYK-320, BYK-322, BYK-323, BYK-325, BYK-330, BYK-331, BYK-333, BYK-335, BYK-341, BYK-344, BYK-345, BYK-346, BYK-348, BYK-354, BYK-355, BYK-356, BYK-358, BYK-361, BYK-370, BYK-371, BYK-375, BYK-380, and BYK-390 (all manufactured by BYK Chemie). Examples of fluorine-based surfactants include F-114, F-177, F-410, F-411, F-450, F-493, F-494, F-443, F-444, F-445, F-446, F-470, F-471, F-472SF, F-474, F-475, F-477, F-478, F-479, F-480SF, F-482, F-483, F-484, F-486, F-487, F-172D, MCF-350SF, and TF-10 25SF, TF-1117SF, TF-1026SF, TF-1128, TF-1127, TF-1129, TF-1126, TF-1130, TF-1116SF, TF-1131, TF-1132, TF-1027SF, TF-1441, TF-1442 (all manufactured by DIC Corporation); Polyfox series PF-636, PF-6320, PF-656, PF-6520 (all manufactured by Omnova), etc. can be used.

[0093] The separation layer-forming composition of the present embodiment may contain one type of surfactant or two or more types of surfactants. When the separation layer-forming composition of this embodiment contains a surfactant, the content of the surfactant is preferably 0.01 to 10 parts by mass, more preferably 0.02 to 2 parts by mass, and even more preferably 0.03 to 1 part by mass, per 100 parts by mass of the (P) component. If the content of the surfactant is within the above-mentioned preferred range, a separation layer with high flatness can be easily formed when the separation layer-forming composition is applied onto a supporting substrate.

[0094] (Support base with separation layer) A support base with a separation layer according to a second aspect of the present invention comprises a support base and a separation layer formed on the support base using the separation layer-forming composition according to the first aspect. The support base with a separation layer of this embodiment includes a support base and a separation layer formed on the support base using the separation layer-forming composition of the above-described embodiment. Therefore, the support base with a separation layer has improved photoreactivity and chemical resistance.

[0095] <Support base> The supporting base has a property of transmitting light. The supporting base is a member that supports the substrate, and is bonded to the substrate via a separation layer. Therefore, the supporting base preferably has a strength required to prevent damage or deformation of the substrate during thinning of the encapsulant, transportation of the substrate, mounting on the substrate, etc. Furthermore, the supporting base preferably transmits light of a wavelength that can alter the separation layer. The material of the support base may be, for example, glass, silicon, acrylic resin, etc. The shape of the support base may be, for example, rectangular, circular, etc., but is not limited to these. Furthermore, for the purpose of achieving higher density integration and improving production efficiency, the support base may be a circular support base that is enlarged in size, or a large panel that is rectangular in shape when viewed from above.

[0096] <Separation layer> The separation layer can be formed using the separation layer-forming composition of the above-described embodiment, and is a layer made of a fired body formed by firing the resin component (P) contained in the separation layer-forming composition. This separation layer is suitably altered by absorbing light irradiated through the support base. The separation layer may be a layer containing a material that does not have a light-absorbing structure, as long as the essential characteristics of the present invention are not impaired. However, from the viewpoint of photoreactivity and separability, it is preferable that the separation layer be formed only from a light-absorbing material.

[0097] The term "fired body" as used herein refers to a composition containing the component (P) that has been fired. This fired body is formed by firing a composition containing component (P) in an atmospheric environment, i.e., in an environment where oxygen is present, and at least a portion of the composition is carbonized. The fired body constituting the separation layer in this embodiment can favorably absorb light in the wavelength range of 600 nm or less and preferably has high chemical resistance.

[0098] The term "alteration" of a separation layer refers to a phenomenon in which the separation layer is in a state where it can be destroyed by external force or where the adhesive strength between the separation layer and a layer in contact with it is reduced. The separation layer becomes brittle by absorbing light and loses the strength or adhesiveness it had before being irradiated with light. Such alteration of the separation layer occurs due to decomposition, changes in configuration, dissociation of functional groups, etc. caused by the energy of the absorbed light.

[0099] The thickness of the separation layer is preferably, for example, in the range of 0.05 μm or more and 50 μm or less, and more preferably in the range of 0.3 μm or more and 1 μm or less. If the thickness of the separation layer is within the range of 0.05 μm or more and 50 μm or less, the desired alteration can be caused in the separation layer by short-term light irradiation and low-energy light irradiation. Furthermore, from the viewpoint of productivity, it is particularly preferable that the thickness of the separation layer is within the range of 1 μm or less.

[0100] For example, in the laminate 10 shown in Figure 1, it is preferable that the surface of the separation layer that comes into contact with the adhesive layer is flat (no irregularities are formed), which makes it easy to form the adhesive layer and to uniformly attach the support base and substrate.

[0101] The support substrate with a separation layer of this embodiment can be produced by similarly carrying out the operation of the [separation layer forming step] described below.

[0102] The support substrate with a separation layer of this embodiment is provided with a separation layer to which the separation layer-forming composition of the above-described embodiment is applied, and therefore has enhanced laser reactivity and photoreactivity. Preferably, chemical resistance is also enhanced.

[0103] (Laminate) A laminate according to a third aspect of the present invention includes a separation layer between a light-transmitting support base and a substrate, the separation layer being a fired product of the separation layer-forming composition according to the above-described embodiment. As shown in FIG. 1, the laminate 10 of this embodiment is formed by laminating a separation layer 2, an adhesive layer 3, and a substrate 4 in this order on a support base 1.

[0104] The explanation of the supporting base 1 is the same as that in the above <Supporting base>. The explanation for the separation layer 2 is the same as that in the above <Separation layer>.

[0105] <Adhesive layer> The adhesive layer 3 is a layer for bonding the support base 1 and the substrate 4 together, and can be formed using a composition for forming an adhesive layer. Such adhesive layer-forming compositions include those containing other components such as a thermoplastic resin, a diluent, and additives. The thermoplastic resin may be any resin capable of exhibiting adhesive strength, and may include one or more of hydrocarbon resins (preferably cycloolefin polymers, etc.), acrylic-styrene resins, maleimide resins, elastomer resins, and polysulfone resins. Examples of diluents include those similar to those described above for component (S). Examples of other components include additional resins for improving the performance of the adhesive layer, curable monomers, photopolymerization initiators, plasticizers, adhesive aids, stabilizers, colorants, thermal polymerization inhibitors, surfactants, etc.

[0106] The thickness of the adhesive layer 3 is preferably within a range of, for example, 0.1 μm or more and 50 μm or less, and more preferably within a range of 1 μm or more and 10 μm or less. If the thickness of the adhesive layer is within the range of 0.1 μm or more and 50 μm or less, the support base 1 and the substrate 4 can be bonded together more satisfactorily. Furthermore, if the thickness of the adhesive layer is 1 μm or more, the substrate can be sufficiently fixed onto the support base, and if the thickness of the adhesive layer is 10 μm or less, the adhesive layer can be easily removed in the subsequent removal step.

[0107] <Substrate> The substrate 4 is subjected to processes such as thinning and mounting while being supported by the support base 1. On the substrate 4, structures such as integrated circuits and metal bumps are mounted. The substrate 4 is typically a silicon wafer substrate, but is not limited to this, and may be a ceramic substrate, a thin film substrate, a flexible substrate, or the like.

[0108] In this embodiment, the element may be a semiconductor element or other element, and may have a single-layer or multi-layer structure. When the element is a semiconductor element, the electronic component obtained by dicing the sealing substrate becomes a semiconductor device.

[0109] The laminate of the above-mentioned embodiment is provided with a separation layer to which the separation layer-forming composition of the above-mentioned embodiment is applied, thereby increasing the laser reactivity and the photoreactivity (favorably altered by irradiation with light), thereby improving the separability of the support base from the laminate. In addition, the laminate of the embodiment has enhanced chemical resistance because it is provided with a separation layer using the separation layer-forming composition of the embodiment described above, and is therefore less susceptible to damage caused by chemicals used in etching processes, lithography processes, etc.

[0110] In the laminate of the above-described embodiment, the support base 1 and the separation layer 2 are adjacent to each other, but this is not limiting, and another layer may be further formed between the support base 1 and the separation layer 2. In this case, the other layer may be made of a material that transmits light. This allows a layer that imparts desirable properties to the laminate 10 to be added as needed without interfering with the incidence of light on the separation layer 2. The wavelength of light that can be used varies depending on the type of material that constitutes the separation layer 2. Therefore, the material that constitutes the other layer does not need to transmit light of all wavelengths, and can be appropriately selected from materials that transmit light of wavelengths that can alter the material that constitutes the separation layer 2.

[0111] Furthermore, the laminate of the above-described embodiment includes the adhesive layer 3 for bonding the support base 1 and the substrate 4, but is not limited to this, and may include only the separation layer 2 between the support base 1 and the substrate 4. In this case, for example, a separation layer that also functions as an adhesive layer is used.

[0112] (Method of manufacturing laminate) A fourth aspect of the present invention is a method for producing a laminate having a separation layer between a light-transmitting supporting base and a substrate, the method comprising a separation layer forming step and a laminating step.

[0113] First Embodiment Figure 2 is a schematic process diagram illustrating one embodiment of a method for producing a laminate, in which Figure 2(a) illustrates the separation layer forming step, and Figure 2(b) illustrates the lamination step. In the method for producing a laminate according to this embodiment, a separation layer-forming composition is used in which a resin component (component (P)) having a repeating unit represented by the general formula (p1) is dissolved in an organic solvent component (component (S)). Also, an adhesive layer-forming composition is used in which a hydrocarbon resin is dissolved in component (S).

[0114] [Separation layer formation process] The separation layer forming step in the embodiment is a step of applying the separation layer forming composition of the embodiment described above to one side of a support base, and then baking the applied composition to form a separation layer. In Figure 2(a), the separation layer forming composition of the above-mentioned embodiment is applied to a support base 1, and then fired to form a separation layer 2 (i.e., a support base with a separation layer is produced).

[0115] The method for applying the separation layer forming composition onto the support base 1 is not particularly limited, but examples thereof include spin coating, dipping, roller blade coating, spray coating, and slit coating.

[0116] In the separation layer forming step, the film is formed by removing the component (S) from the coating layer of the separation layer forming composition applied to the support substrate 1 in a heated environment or a reduced pressure environment. The component (S) can be removed, for example, by baking at a temperature of 80 to 150°C for 120 to 360 seconds. Thereafter, the film obtained by removing the (S) component from the coating layer is baked in an atmospheric environment to form the separation layer 2 made of the baked body.

[0117] The temperature at which the film obtained by removing the component (S) from the coating layer is baked is set appropriately depending on the type of component (P), and is preferably, for example, 200° C. or higher, more preferably 250° C. or higher. If the baking temperature is equal to or higher than the lower limit of the preferred range, a separation layer capable of absorbing light with a wavelength of 600 nm or less can be more stably formed. The upper limit of the temperature during firing is not particularly limited, but is preferably 800°C or lower, and more preferably 600°C or lower, for example.

[0118] The baking time is preferably 3 minutes to 3 hours, more preferably 3 minutes to 30 minutes, which ensures the formation of a separation layer that can absorb light with a wavelength of 600 nm or less.

[0119] [Lamination process] The lamination step in the embodiment is a step of laminating the support base on which the separation layer is formed and the substrate on which the separation layer is not formed, with the separation layer and the adhesive layer interposed therebetween. In Figure 2(b), a support base 1 on which a separation layer 2 is formed and a substrate 4 on which no separation layer 2 is formed are laminated via the separation layer 2 and adhesive layer 3, resulting in a laminate 10 in which the support base 1, separation layer 2, adhesive layer 3, and substrate 4 are stacked in this order.

[0120] A specific method for the lamination step is to apply an adhesive layer-forming composition onto the separation layer 2, heat it to form the adhesive layer 3, and then bond the support base 1 and the substrate 4 together.

[0121] The method for applying the adhesive layer-forming composition onto the separation layer 2 is not particularly limited, but may be the same as the method for applying the separation layer-forming composition onto the support base 1 described above. The baking treatment for forming the adhesive layer 3 is carried out, for example, by gradually increasing the temperature while heating, and the adhesive layer 3 is formed by removing the component (S) from the adhesive layer-forming composition.

[0122] The method for bonding the support base 1 and the substrate 4 is to place the substrate 4 at a predetermined position on the adhesive layer 3, and then heat the substrate 4 under vacuum (for example, to about 100°C) while pressing the support base 1 and the substrate 4 together using a die bonder or the like.

[0123] According to the method for producing a laminate of the first embodiment, a separation layer is formed by applying the separation layer-forming composition of the above-described embodiment, which enhances laser reactivity and photoreactivity, thereby improving the separability of the support base from the laminate. Preferably, a laminate with high chemical resistance can be produced.

[0124] In the method for manufacturing a laminate of the present embodiment described above, the separation layer 2 is formed on the support base 1, but this is not limitative, and the separation layer 2 may also be formed on the substrate 4. In the method for manufacturing the laminate of this embodiment described above, the adhesive layer 3 is formed on the separation layer 2, but this is not limited to this, and the adhesive layer 3 may also be formed on the substrate 4. In addition, the separation layer 2 may be formed on both the support base 1 and the substrate 4, and in this case, the support base 1 and the substrate 4 are bonded together via the separation layer 2, the adhesive layer 3 and the separation layer 2.

[0125] Second Embodiment Figure 3 is a schematic process diagram illustrating another embodiment of the method for manufacturing a laminate, in which Figure 3(a) shows the laminate manufactured by the manufacturing method of the first embodiment, and Figure 3(b) is a diagram illustrating the sealing step. The method for producing a laminate according to this other embodiment further includes a sealing step in addition to the separation layer forming step and laminating step.

[0126] [Sealing process] The sealing step in this embodiment is a step of producing a sealed body by sealing the substrate, which has been attached to the support base via the adhesive layer, with a sealing material after the lamination step. In FIG. 3(b), the entire substrate 4 disposed on the adhesive layer 3 is sealed with a sealing material to obtain a sealed body 20 (laminate).

[0127] In the sealing process, a sealing material heated to, for example, 130 to 170°C is supplied onto the adhesive layer 3 so as to cover the substrate 4 while maintaining a high viscosity, and is compression molded to produce a sealed body 20 (laminate) in which a sealing material layer 5 is provided on the adhesive layer 3.

[0128] The sealing material may be, for example, a composition containing an epoxy resin or a silicone resin. The sealing material layer 5 is preferably provided so as to cover the entire substrate 4 on the adhesive layer 3, rather than being provided for each individual substrate 4.

[0129] According to the method for manufacturing a laminate of the second embodiment, it is possible to suitably form a sealing substrate having a substrate (wiring layer) on a separation layer and an adhesive layer by applying the separation layer-forming composition of the above-mentioned embodiment.

[0130] Third Embodiment Fig. 4 is a schematic process diagram illustrating another embodiment of the manufacturing method of the laminate. Fig. 4(a) is a diagram illustrating the sealed body manufactured by the manufacturing method of the second embodiment, Fig. 4(b) is a diagram illustrating the grinding step, and Fig. 4(c) is a diagram illustrating the rewiring formation step. The method for manufacturing a laminate according to this other embodiment further includes a grinding step and a rewiring formation step in addition to the separation layer formation step, lamination step, and sealing step described above.

[0131] [Grinding process] The grinding step in this embodiment is a step of grinding the sealant portion (sealant layer 5) of sealant 20 after the sealing step so that a part of substrate 4 is exposed. Grinding of the sealing material portion is carried out by grinding the sealing material layer 5 until it has a thickness substantially equal to that of the substrate 4, for example, as shown in FIG. 4(b).

[0132] [Rewiring formation process] The rewiring formation step in this embodiment is a step of forming a rewiring layer 6 on the exposed substrate 4 after the grinding step. The redistribution layer (RDL) is a thin-film wiring body that forms wiring connected to elements and can have a single-layer or multi-layer structure. For example, the redistribution layer can be made of a dielectric (silicon oxide (SiO x The wiring may be formed on a conductive material (metal such as aluminum, copper, titanium, nickel, gold, silver, or an alloy such as a silver-tin alloy) made of a conductive material (such as a photosensitive resin, photosensitive epoxy, or the like), but is not limited to this.

[0133] The rewiring layer 6 is formed by first depositing silicon oxide (SiO x ), a dielectric layer of a photosensitive resin or the like is formed. The dielectric layer of silicon oxide can be formed by, for example, a sputtering method, a vacuum deposition method, or the like. The dielectric layer of a photosensitive resin can be formed by applying the photosensitive resin onto the encapsulant layer 5 by, for example, a method such as spin coating, dipping, roller blade, spray coating, or slit coating.

[0134] Subsequently, wiring is formed on the dielectric layer using a conductor such as a metal. The wiring can be formed by known semiconductor process techniques such as lithography processes such as photolithography (resist lithography), etching processes, etc. Examples of such lithography processes include lithography processes using a positive resist material and lithography processes using a negative resist material.

[0135] In this way, when performing photolithography, etching, and the like, the separation layer 2 is exposed to an acid such as hydrofluoric acid, an alkali such as tetramethylammonium hydroxide (TMAH), or a resist solvent for dissolving the resist material. In particular, in the fan-out type technology, PGMEA, cyclopentanone, cycloheptanone, N-methyl-2-pyrrolidone (NMP), cyclohexanone, or the like is used as the resist solvent. However, by forming a separation layer using the separation layer-forming composition of the above-described embodiment, the separation layer has high chemical resistance, and therefore is not easily dissolved or peeled off even when exposed to not only acids and alkalis but also resist solvents. In this way, the rewiring layer 6 can be suitably formed on the sealing material layer 5.

[0136] According to the method for manufacturing a laminate of the third embodiment, a laminate 30 can be stably manufactured, which is formed by stacking a support base 1, a separation layer 2, an adhesive layer 3, a sealing material layer 5 covering a substrate 4, and a rewiring layer 6 in this order. The laminate 30 is fabricated in a process based on fan-out technology, in which terminals provided on the substrate 4 are mounted on the rewiring layer 6 that extends outside the chip area.

[0137] In the method for manufacturing the laminate of this embodiment, it is further possible to form bumps or mount elements on the rewiring layer 6. Mounting elements on the rewiring layer 6 can be performed using, for example, a chip mounter.

[0138] (Electronic component manufacturing method) A method for producing an electronic component according to a fifth aspect of the present invention includes a separation step and a removal step after a laminate is obtained by the method for producing a laminate according to the fourth aspect.

[0139] Fig. 5 is a schematic process diagram illustrating one embodiment of a manufacturing method for a semiconductor package (electronic component). Fig. 5(a) is a diagram showing a stack manufactured by the manufacturing method of the third embodiment, Fig. 5(b) is a diagram illustrating the separation step, and Fig. 5(c) is a diagram illustrating the removal step.

[0140] [Separation process] The separation step in the embodiment is a step of irradiating light (arrow) onto separation layer 2 through support base 1 to alter the properties of separation layer 2, thereby separating support base 1 from laminate 30.

[0141] As shown in FIG. 5(a), in the separation step, separation layer 2 is irradiated with light (arrow) through support base 1, thereby altering separation layer 2. The wavelength capable of altering the separation layer 2 is, for example, in the range of 600 nm or less. The type and wavelength of the light to be irradiated may be appropriately selected depending on the transparency of the support base 1 and the material of the separation layer 2, and may include, for example, laser light or non-laser light, such as a solid-state laser such as a YAG laser, ruby ​​laser, glass laser, YVO4 laser, LD laser, or fiber laser, a liquid laser such as a dye laser, a gas laser such as a CO2 laser, excimer laser, Ar laser, or He-Ne laser, a semiconductor laser, or a free electron laser. This alters the separation layer 2, making it possible to easily separate the support base 1 and the substrate 4.

[0142] When irradiating with laser light, the following conditions can be given as an example of the laser light irradiation conditions. The average output power of the laser beam is preferably 1.0 W or more and 5.0 W or less, and more preferably 3.0 W or more and 4.0 W or less. The repetition frequency of the laser beam is preferably 20 kHz or more and 60 kHz or less, and more preferably 30 kHz or more and 50 kHz or less. The scanning speed of the laser beam is preferably 100 mm / s or more and 10,000 mm / s or less.

[0143] After the separation layer 2 is irradiated with light (arrow) to change the properties of the separation layer 2, the support base 1 is separated from the laminate 30 as shown in FIG. 5(b). For example, the support base 1 and the substrate 4 are separated by applying a force in a direction that moves them apart. Specifically, the support base 1 and the substrate 4 can be separated by fixing one of the support base 1 or the substrate 4 side (rewiring layer 6) to a stage and lifting the other while suction-holding it with a separation plate equipped with an adsorption pad such as a bellows pad. The force applied to the laminate 30 can be adjusted appropriately depending on the size of the laminate 30, etc., and is not limited to any particular value. For example, if the laminate has a diameter of approximately 300 mm, the support base 1 and the substrate 4 can be suitably separated by applying a force of approximately 0.1 to 5 kgf (0.98 to 49 N).

[0144] [Removal process] The removal step in this embodiment is a step of removing the adhesive layer 3 and the separation layer 2 attached to the substrate 4 after the separation step. In Fig. 5(b), after the separation step, the adhesive layer 3 and the separation layer 2 are attached to the substrate 4. In this embodiment, in the removal step, the adhesive layer 3 and the separation layer 2 attached to the substrate 4 are removed, thereby obtaining the electronic component 40 shown in Fig. 5(c).

[0145] Examples of methods for removing the adhesive layer 3 and the like attached to the substrate 4 include a method of removing residues of the adhesive layer 3 and the separation layer 2 using a cleaning solution, and a method of irradiating with plasma. The cleaning liquid preferably contains an organic solvent, and the organic solvent contained in the separation layer-forming composition and the adhesive layer-forming composition is preferably used as the organic solvent.

[0146] <Other embodiments> Fig. 6 is a schematic process diagram illustrating another embodiment of a method for manufacturing a semiconductor package (electronic component). Fig. 6(a) is a schematic diagram illustrating another embodiment of a laminate to which the present invention is applied, Fig. 6(b) is a diagram illustrating the separation step, and Fig. 6(c) is a diagram illustrating the removal step.

[0147] The laminate 50 of the embodiment shown in FIG. 6(a) is formed by laminating a support base 51, a separation layer 52, a wiring layer 57, a substrate 54, and a sealing material layer 55 in this order from the outermost surface 51s side.

[0148] The explanation of the supporting base 51 is the same as that in the above <Supporting Base>. The description of the separation layer 52 is the same as that in the above <Separation Layer>.

[0149] The wiring layer 57 is made of, for example, a dielectric material (silicon oxide (SiO x ), photosensitive resin such as photosensitive epoxy, etc.) on which wiring is formed using a conductor (metal such as aluminum, copper, titanium, nickel, gold, silver, etc., or alloy such as silver-tin alloy). The description of the substrate 54 is the same as that in the <Substrate> section above. The sealing material layer 55 may be formed using a composition containing, for example, an epoxy-based resin or a silicone-based resin.

[0150] The laminate 50 can be produced, for example, as follows. First, a separation layer 52 is formed on the surface opposite to the outermost surface 51s of the support base 51. The separation layer 52 may be formed in the same manner as in the above-mentioned [Separation layer forming step]. Next, a wiring layer 57 is formed on the surface of the separation layer 52 opposite to the support base 51. The wiring layer 57 may be formed in the same manner as in the above-mentioned [rewiring formation process]. Next, the substrate 54 is bonded to the surface of the wiring layer 57 opposite to the separation layer 52 via, for example, bumps. Next, the substrate 54 bonded to the wiring layer 57 is sealed with a sealing material so as to cover it, thereby forming a sealing material layer 55. The sealing material layer 55 may be formed in the same manner as in the above-mentioned [Sealing step]. In this way, the laminate 50 is manufactured.

[0151] As shown in FIG. 6(a), in the separation step in this embodiment, light (arrow) is irradiated onto separation layer 52 through support base 51 to alter the properties of separation layer 52. After the separation layer 52 is irradiated with light (arrow) to change the properties of the separation layer 52, the support base 51 is separated from the laminate 50 as shown in Fig. 6(b). The operation in this separation step may be performed in the same manner as the operation in the above-mentioned [Separation Step].

[0152] As shown in FIG. 6(c), in the removal step in this embodiment, after the separation step, the separation layer 52 attached to the wiring layer 57 is removed, thereby obtaining an electronic component 60. Examples of methods for removing the separation layer 52 adhering to the wiring layer 57 include a method of irradiating with plasma and a method of using a cleaning solution to remove residue of the separation layer 52. As the plasma, oxygen plasma is preferably used.

[0153] In the method for manufacturing an electronic component of this embodiment, after the above-mentioned removing step, the electronic component may be further subjected to processing such as solder ball formation, dicing, or oxide film formation. [Example]

[0154] The present invention will be described in more detail below with reference to examples, but the present invention is not limited to these examples.

[0155] <Resin component> As the resin components, the following resin (P-1), resin (P-2), resin (P-3), resin (Q-1), and resin (Q-2) were used.

[0156] Resin (P-1): A resin having a repeating unit (p12) represented by the following chemical formula (p1-2) and a repeating unit (p22) represented by the following chemical formula (p2-2). The weight average molecular weight (Mw) calculated in terms of standard polystyrene by GPC measurement was 6,000, and the molecular weight dispersity (Mw / Mn) was 1.62. 13 The copolymer composition ratio (proportion (molar ratio) of each repeating unit in the structural formula) determined by C-NMR was repeating unit (p12) / repeating unit (p22)=10 / 90.

[0157] Resin (P-2): A resin having a repeating unit (p12) represented by the following chemical formula (p1-2) and a repeating unit (p22) represented by the following chemical formula (p2-2). The weight average molecular weight (Mw) calculated in terms of standard polystyrene by GPC measurement was 5,500, and the molecular weight dispersity (Mw / Mn) was 1.60. 13 The copolymer composition ratio (proportion (molar ratio) of each repeating unit in the structural formula) determined by C-NMR was repeating unit (p12) / repeating unit (p22)=5 / 95.

[0158] [ka]

[0159] Resin (P-3): A resin having a repeating unit (p16) represented by the following chemical formula (p1-6) and a repeating unit (p26) represented by the following chemical formula (p2-6). n1 in chemical formula (p1-6) = 3, and n2 in chemical formula (p2-6) = 3. The weight-average molecular weight (Mw) calculated in terms of standard polystyrene by GPC measurement was 2000, and the molecular weight dispersity (Mw / Mn) was 2.10. 13 The copolymer composition ratio (proportion (molar ratio) of each repeating unit in the structural formula) determined by C-NMR was repeating unit (p16) / repeating unit (p26)=50 / 50.

[0160] [ka]

[0161] Resin (Q-1): A resin having a repeating unit (p21) represented by the following chemical formula (p2-1). The weight-average molecular weight (Mw) calculated in terms of standard polystyrene by GPC measurement is 12,000, and the molecular weight dispersity (Mw / Mn) is 2.10. The polymerization composition ratio (proportion (molar ratio) of repeating units in the structural formula) is repeating unit (p21) = 100.

[0162] [ka]

[0163] Resin (Q-2): A resin having a repeating unit (p26) represented by the above chemical formula (p2-6). The weight average molecular weight (Mw) calculated using standard polystyrene standards by GPC measurement was 2,300, and the molecular weight dispersity (Mw / Mn) was 2.00. The polymerization composition ratio (proportion (molar ratio) of repeating units in the structural formula) was repeating unit (p26) = 100.

[0164] <Preparation of Separation Layer-Forming Composition> (Examples 1 to 5, Comparative Examples 1 and 2) The components shown in Table 1 were mixed and dissolved to prepare the separation layer-forming compositions of each example (resin component concentration: 20% by mass).

[0165] [Table 1]

[0166] In Table 1, the abbreviations have the following meanings: The numbers in brackets [ ] are the blend amounts (parts by mass). (P)-1: Resin (P-1) (P)-2: Resin (P-2) (P)-3: Resin (P-3) (P)-4: Resin (Q-1) (P)-5: Resin (Q-2) (T)-1: A thermal acid generator comprising a compound represented by the following chemical formula (T-1): (S)-1: Propylene glycol monomethyl ether (PGME)

[0167] [ka]

[0168] <Formation of separation layer> Each separation layer-forming composition was spin-coated onto a bare glass support substrate (12 inches, 0.7 mm thick), heated at 100°C for 300 seconds, and then heated at 150°C for 300 seconds to remove the solvent, forming a film with a thickness of 1 μm. The formed film was then baked in an atmospheric environment at a temperature of 300°C for 20 minutes to form a separation layer with a thickness of 0.3 µm on the bare glass support substrate, thereby obtaining a support substrate with a separation layer.

[0169] [Evaluation of light transmittance through separation layer] In the above-mentioned <Formation of separation layer>, the film (separation layer) formed using each separation layer-forming composition before and after firing was irradiated with light having a wavelength of 380 to 780 nm using a spectroscopic analyzer UV-3600 (manufactured by Shimadzu Corporation) to evaluate the transmittance (%) of light having a wavelength of 532 nm for each film formed on a bare glass support substrate. The evaluation results are shown in Table 2.

[0170] [Evaluation of laser reactivity in separation layer] The laser reactivity of the separation layer formed using the separation layer-forming composition of each example was evaluated by irradiating it with laser light having a wavelength of 532 nm under conditions of a scanning speed of 7200 mm / sec, a frequency of 40 kHz, an output (current value) of 24 A, and an irradiation pitch of 140 μm. The laser reactivity was evaluated by observing the traces of the laser light irradiated on the separation layer using a microscope VHX-600 (manufactured by Keyence Corporation) and determining the size of the traces of the laser light on the surface of the separation layer (laser indentation diameter / μm). The evaluation criteria were set as follows. The evaluation results are shown in Table 2. Evaluation criteria ◎: The diameter of the laser indentation was 160 μm or more. ◯: The diameter of the laser dent was 150 μm or more and less than 160 μm. △: The diameter of the laser indentation was 100 μm or more and less than 150 μm. ×: The diameter of the laser dent was less than 100 μm.

[0171] [Table 2]

[0172] The results shown in Table 2 show that the separation layers formed using the separation layer-forming compositions of Examples 1 to 5 all had lower light transmittance and significantly larger laser indentation diameters than the separation layers formed using the separation layer-forming compositions of Comparative Examples 1 and 2. That is, it was confirmed that the separation layer-forming composition to which the present invention is applied can form a separation layer having enhanced photoreactivity and improved separability of the support substrate from the laminate.

[0173] <Manufacturing of laminate> Using the same method as in <Formation of Separation Layer> described above, the separation layer-forming composition of each Example was spin-coated onto a bare glass support substrate (12 inches, 0.7 mm thick), heated at 100°C for 300 seconds, and then heated at 150°C for 300 seconds to remove the solvent and form a film. The formed film was then baked in an atmospheric environment at 300°C for 20 minutes to form a 0.5 μm-thick separation layer on the bare glass support substrate (separation layer formation step). On the other hand, adhesive composition TZNR (registered trademark)-A4012 (manufactured by Tokyo Ohka Kogyo Co., Ltd.) was spin-coated onto a semiconductor wafer substrate (12 inches, silicon) and baked at temperatures of 90°C, 160°C, and 220°C for 4 minutes each to form an adhesive layer with a thickness of 50 μm. Next, the bare glass support base on which the separation layer was formed and the semiconductor wafer substrate on which the adhesive layer was formed were stacked together in this order: semiconductor wafer substrate, adhesive layer, separation layer, and bare glass support base, and pressed together for 2 minutes under vacuum (5 Pa) and at 215° C. with a bonding pressure of 4000 kgf (approximately 39.2 kN). This resulted in the bare glass support base and semiconductor wafer substrate being stacked via the separation layer and adhesive layer to obtain a laminate (lamination process).

[0174] After obtaining the laminate, the separation layer was irradiated with a laser beam having a wavelength of 532 nm from the support substrate side of the laminate under the conditions of a scanning speed of 3000 mm / s, a frequency of 40 kHz, an output (current value) of 24 A, and an irradiation pitch of 140 μm (separation step). After this, the adhesive layer was washed and removed using p-menthane (removal step). It was confirmed that the above operation separated the support base from the semiconductor wafer substrate of the laminate.

[0175] <Electronic component manufacturing example (1)> Using the same method as in <Formation of Separation Layer> described above, the separation layer-forming composition of each Example was spin-coated onto a bare glass support substrate (12 inches, 0.7 mm thick), heated at 100°C for 300 seconds, and then heated at 150°C for 300 seconds to remove the solvent and form a film. The formed film was then baked in an atmospheric environment at 300°C for 20 minutes to form a separation layer with a thickness of 0.5 μm on the bare glass support substrate, thereby obtaining a support substrate with a separation layer (separation layer formation step). Then, adhesive composition TZNR (registered trademark)-A4012 (manufactured by Tokyo Ohka Kogyo Co., Ltd.) was spin-coated onto this separation layer and baked at temperatures of 90°C, 160°C, and 220°C for 4 minutes each to form an adhesive layer with a thickness of 50 μm. Next, using a die bonder (manufactured by TRESKY), the plate of the die bonder was heated to 150°C, and a 2 mm square silicon bare chip was pressure-bonded onto the adhesive layer for 1 second at a pressure of 35 N. After the silicon bare chip was placed, the mixture was heated at 200°C for 1 hour in a nitrogen atmosphere to obtain a laminate (lamination process).

[0176] The resulting laminate was placed on a plate heated to 50°C, and 12 g of a sealant containing an epoxy resin was placed on it so as to cover the bare chip. Using a bonding device, a pressure of 1 ton was applied with a pressing plate heated to 130°C under reduced pressure of less than 10 Pa, and compression was performed for 5 minutes. In this way, the bare chip placed on the adhesive layer was sealed with the sealant, and a sealed body was produced (sealing process).

[0177] After preparing the sealed body, the separation layer was irradiated with a 532 nm laser beam from the support substrate side of the sealed body under the conditions of a scanning speed of 3000 mm / s, a frequency of 40 kHz, an output (current value) of 24 A, and an irradiation pitch of 140 μm (separation step). After this, the adhesive layer was washed and removed using p-menthane (removal step). It was confirmed that the support base was separated from the sealing body by the above operation. An electronic component was obtained in the manner described above.

[0178] <Electronic component manufacturing example (2)> Using the same method as in <Formation of Separation Layer> described above, the separation layer-forming composition of each Example was spin-coated onto a bare glass support substrate (12 inches, 0.7 mm thick), and the solvent was removed by heating at 90°C for 180 seconds to form a film. The formed film was then baked in an atmospheric environment at 300°C for 10 minutes to form a separation layer with a thickness of 0.35 μm on the bare glass support substrate, thereby obtaining a support substrate with a separation layer (separation layer formation step). Next, a wiring layer forming material (product name TMMR S2000) was applied onto the separation layer and baked at 90°C for 3 minutes in an atmospheric environment to form a 10 μm thick wiring layer on the separation layer, thereby obtaining a laminate.

[0179] After forming the wiring layer, the separation layer was irradiated with 200 mJ / cm from the bare glass support base side of the laminate. 2The laminate was irradiated with a 532 nm laser beam at an output (current) of 22 A and an irradiation pitch of 80 μm. The laminate was then immersed in propylene glycol monomethyl ether acetate (PGMEA) as a cleaning solution and baked at 90°C for 5 minutes. This was followed by three cycles of baking at 200°C for 60 minutes in a nitrogen atmosphere to separate the support base from the laminate (separation step). The surface of the wiring layer facing the separation layer was then irradiated with oxygen plasma (power 2000 W, oxygen flow rate 2000 sccm, pressure 75 Pa, temperature 50°C, irradiation time 5 minutes) to remove the separation layer attached to the wiring layer (removal step). It was confirmed that the support substrate was separated from the laminate by the above-mentioned operation. An electronic component was obtained in the manner described above. [Explanation of symbols]

[0180] 1 Support base, 2 Separation layer, 3 Adhesive layer, 4 Substrate, 5 Encapsulation material layer, 6 Rewiring layer, 10 Laminate, 20 Encapsulation, 30 Laminate, 40 Electronic component, 50 Laminate, 51 Support base, 52 Separation layer, 54 Substrate, 55 Encapsulation material layer, 57 Wiring layer, 60 Electronic component

Claims

1. A separation layer-forming composition for forming a separation layer that is altered by irradiation of light from the support base side and that enables separation of the support base from the laminate, in a laminate having a separation layer between a light-transmitting support base and a substrate, the separation layer comprising: A separation layer-forming composition comprising a resin component (P) having a repeating unit represented by the following general formula (p1): 【Chemical 1】 [In the formula, L Ｐ１ represents a divalent linking group. Ｐ１ represents a fused polycyclic aromatic group which may have a substituent.]

2. A separation layer-forming composition for forming a separation layer that is altered by irradiation of light from the support base side and that enables separation of the support base from the laminate, in a laminate having a separation layer and an adhesive layer between a light-transmitting support base and a substrate, The separation layer-forming composition according to claim 1 , comprising a resin component (P) having a repeating unit represented by the following general formula (p1): 【Chemistry 2】 [In the formula, L Ｐ１ represents a divalent linking group. Ｐ１ represents a fused polycyclic aromatic group which may have a substituent.]

3. The separation layer-forming composition according to claim 1 or 2, wherein the resin component (P) further has a repeating unit represented by the following general formula (p2): 【Chemistry 3】 [In the formula, L Ｐ２ represents a divalent linking group. Ｐ２ represents a monocyclic aromatic group which may have a substituent.]

4. The separation layer-forming composition according to any one of claims 1 to 3, further comprising a thermal acid generator.

5. A supporting base; A separation layer formed on the support substrate using the separation layer-forming composition according to any one of claims 1 to 4; A support substrate with a separation layer.

6. A laminate including a separation layer between a light-transmitting supporting base and a substrate, A laminate, wherein the separation layer is a fired product of the separation layer-forming composition according to any one of claims 1 to 4.

7. A method for producing a laminate having a separation layer between a light-transmitting supporting base and a substrate, comprising: a separation layer forming step of applying the separation layer forming composition according to any one of claims 1 to 4 to at least one of the substrate and the support base, and then baking the composition to form the separation layer; a lamination step of laminating the substrate and the supporting base via the separation layer; A method for producing a laminate comprising the steps of:

8. The method for producing a laminate according to claim 7 , further comprising, after the laminating step, a sealing step of sealing the substrate bonded to the support base via the separation layer with a sealing material to produce a sealed body.

9. a grinding step of grinding a sealing material portion of the sealing body after the sealing step so that a part of the substrate is exposed; a rewiring forming step of forming rewiring on the exposed substrate after the grinding step; The method for producing a laminate according to claim 8 , further comprising:

10. a separation step of obtaining a laminate by the laminate manufacturing method according to any one of claims 7 to 9, and then irradiating the separation layer with light through the support base to alter the separation layer, thereby separating the support base from the laminate; a removal step of removing the separation layer attached to the substrate after the separation step; The method for manufacturing an electronic component includes the steps of:

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