Semiconductor Devices

Abstract

To suppress a height of a semiconductor device low.SOLUTION: A semiconductor device (1) includes: a cooler (3) including a bottom plate (31), a plurality of fins (32) disposed on the bottom plate, and a cover member (33) covering the fins and including a heat radiation surface (331) facing the bottom plate with the fins interposed therebetween, in which a flow channel of cooling water is formed by a space surrounded by the bottom plate, the fins, and the cover member; a semiconductor element (7) disposed on a first surface (332) of the cover member on an opposite side of the heat radiation surface through the insulating substrate (6); and insulating members (4, 5) being disposed on the cooler and sealing the insulating substrate and the semiconductor element (7). The cover member includes a plate-shaped part (33c) extending out of parts (33a, 33b) covering the fins, and the plate-shaped part is bonded to the bottom plate. The plate-shaped part includes a second surface (333). The insulating member is bonded on the second surface. Regarding a height direction from the bottom plate toward the heat radiation surface, the second surface is lower in a height position than the first surface.SELECTED DRAWING: Figure 2

Description

[Technical Field]

[0001] The present invention relates to a semiconductor device. [Background technology]

[0002] 2. Description of the Related Art Semiconductor modules have substrates on which semiconductor elements such as IGBTs (Insulated Gate Bipolar Transistors), power MOSFETs (Metal Oxide Semiconductor Field Effect Transistors), and FWDs (Free Wheeling Diodes) are mounted, and are used in inverter devices and the like.

[0003] A semiconductor device in which this type of semiconductor module and cooler are integrated is known, and a specific configuration thereof is described in, for example, Patent Document 1.

[0004] In the semiconductor device described in Patent Document 1, a semiconductor element is placed on a cooler via a base plate. Heat generated during operation of the semiconductor module is dissipated via a refrigerant circulating inside the cooler. This cools the semiconductor module. [Prior art documents] [Patent documents]

[0005] [Patent Document 1] Japanese Patent Application Laid-Open No. 2012-49167 Summary of the Invention [Problem to be solved by the invention]

[0006] If the internal structure of a semiconductor module including semiconductor elements is exposed, there is a risk that this internal structure may be damaged by external factors, etc. Therefore, a semiconductor device is in practical use in which a frame-shaped case member is placed on the top plate of a cooler to enclose the internal structure placed on the top plate, and the space surrounded by the top plate and the case member is filled with a thermosetting resin to seal the internal structure.

[0007] However, the height of such a semiconductor device is at least the sum of the total height of the cooler and the total height of the case member, making it difficult to mount the semiconductor device in a location with limited vertical space.

[0008] The present invention has been made in view of the above circumstances, and one of its objects is to provide a semiconductor device that can be reduced in height. [Means for solving the problem]

[0009] A semiconductor device according to one embodiment of the present invention comprises a bottom plate, a plurality of fins arranged on the bottom plate, and a cover member covering the plurality of fins, the cover member having a heat dissipation surface facing the bottom plate across the plurality of fins. The semiconductor device further comprises a cooler in which a flow path for cooling water is formed by the space enclosed by the bottom plate, the plurality of fins, and the cover member, a semiconductor element arranged on a first surface of the cover member opposite the heat dissipation surface via an insulating substrate, and an insulating member arranged on the cooler and sealing the insulating substrate and the semiconductor element. The cover member has a plate-like portion extending outward from a portion covering the plurality of fins, the plate-like portion being bonded to the bottom plate, the plate-like portion having a second surface, the insulating member being bonded to the second surface, and the second surface being lower in height than the first surface in a height direction from the bottom plate toward the heat dissipation surface. [Effects of the Invention]

[0010] According to the present invention, the height of the semiconductor device can be reduced. [Brief explanation of the drawings]

[0011] [Figure 1] 1 is a plan view schematically showing a semiconductor device according to an embodiment of the present invention; [Figure 2] 1 is a cross-sectional view of a semiconductor device according to an embodiment of the present invention. [Figure 3]FIG. 2 is a top perspective view of a cooler according to an embodiment of the present invention. [Figure 4] FIG. 2 is a bottom perspective view of a cooler according to an embodiment of the present invention. [Figure 5] 1 is a plan view of a cooler according to an embodiment of the present invention, with a cover member not shown. FIG. [Figure 6] 1 is a cross-sectional view of a partial configuration of a semiconductor device according to an embodiment of the present invention. [Figure 7] FIG. 10 is a cross-sectional view of a semiconductor device according to a first modified example of the present invention. [Figure 8] FIG. 10 is a cross-sectional view of a semiconductor device according to a second modification of the present invention. [Figure 9] FIG. 10 is a cross-sectional view of a semiconductor device according to a third modification of the present invention. [Figure 10] FIG. 10 is a cross-sectional view of a semiconductor device according to a fourth modified example of the present invention. DETAILED DESCRIPTION OF THE INVENTION

[0012] Semiconductor devices to which the present invention can be applied will be described below. In the following description, common or corresponding elements will be denoted by the same or similar reference numerals, and duplicated descriptions will be omitted.

[0013] Fig. 1 is a plan view schematically showing a semiconductor device 1 according to one embodiment of the present invention. Fig. 2 is a cross-sectional view taken along line AA in Fig. 1, showing the internal structure of the semiconductor device 1. For convenience, Fig. 2 also shows a cross-section of a housing 100 of an inverter device in which the semiconductor device 1 is installed. The semiconductor device 1 shown below is merely an example, and the semiconductor device according to the present invention is not limited to this and can be modified as appropriate.

[0014] In the following description, the longitudinal direction (the direction in which the multiple semiconductor modules 2 are arranged), the lateral direction, and the height direction of the semiconductor device 1 are referred to as the X direction, Y direction, and Z direction, respectively. The X direction, Y direction, and Z direction are mutually orthogonal and form a right-handed system. For convenience of explanation, the positive side of the Z direction (the side pointed by the arrow) is also referred to as the upper side, and the negative side of the Z direction is also referred to as the lower side. Note that these directional names are used for convenience in explaining the relative positional relationships of the components and do not indicate absolute directions. For example, the Z direction (up-down direction) does not necessarily have to be the vertical direction and may be, for example, the horizontal direction. Furthermore, in this specification, a plan view refers to the top surface of the semiconductor device 1 as seen from the positive side of the Z direction.

[0015] Also, not all elements in each drawing are necessarily labeled with a reference numeral. Specifically, when multiple identical elements are shown in one drawing, only representative elements among these identical elements are labeled with a reference numeral, and the reference numerals for the remaining elements are omitted. For example, in FIG. 1, some of the multiple control terminals 10 are labeled with the reference numeral 10, and the reference numeral 10 is omitted for the remaining control terminals 10.

[0016] A semiconductor device 1 according to one embodiment of the present invention is applied to a power conversion device such as a power module, and is a power module that constitutes an inverter circuit. As shown in Figures 1 and 2, the semiconductor device 1 includes a plurality of (three in this embodiment) semiconductor modules 2, a cooler 3 that cools the semiconductor modules 2, a case member 4 that houses the semiconductor modules 2, and a sealing resin 5 that fills the case member 4.

[0017] The semiconductor module 2 includes an insulating substrate 6, a semiconductor element 7 disposed on the insulating substrate 6, and a metal wiring board 8 disposed on the semiconductor element 7. In this embodiment, three semiconductor modules 2 are arranged side by side in the X direction. The three semiconductor modules 2 constitute, for example, a U phase, a V phase, and a W phase from the positive side in the X direction, and together form a three-phase inverter circuit.

[0018] Fig. 3 is an upper perspective view of the cooler 3. Fig. 4 is a lower perspective view of the cooler 3. The cooler 3 is formed in a rectangular shape when viewed from above. The cooler 3 includes a bottom plate 31, a plurality of fins 32 arranged on the bottom plate 31, and a cover member 33 that covers the plurality of fins 32.

[0019] The cooler 3 has a space surrounded by a bottom plate 31, a plurality of fins 32, and a cover member 33, which forms a flow path for cooling water for cooling the semiconductor module 2.

[0020] The cover member 33 has a heat dissipation surface 331 (in other words, the heat dissipation surface 331 (the lower surface of the cover member 33) that defines a flow path for cooling water above the multiple fins 32) facing the bottom plate 31 with the multiple fins 32 in between. The insulating substrate 6 is bonded to a first surface 332 (the upper surface of the cover member 33) of the cover member 33 on the side opposite to the heat dissipation surface 331 with a bonding material S1 such as solder or sinter paste.

[0021] The insulating substrate 6 is formed of, for example, a DCB (Direct Copper Bonding) substrate, an AMB (Active Metal Brazing) substrate, or a metal-based substrate. More specifically, the insulating substrate 6 has a heat sink 6a, an insulating plate 6b formed on the upper surface of the heat sink 6a, and a circuit board 6c formed on the upper surface of the insulating plate 6b. The insulating substrate 6 is formed, for example, in a rectangular shape when viewed from above.

[0022] The heat sink 6a has a predetermined thickness in the Z direction and is formed so as to cover the lower surface of the insulating plate 6b. The heat sink 6a is made of a metal plate with good thermal conductivity, such as copper or aluminum.

[0023] The insulating plate 6b is formed of an insulating material such as a ceramic material such as alumina (Al2O3), aluminum nitride (AlN), silicon nitride (Si3N4), a resin material such as epoxy, or an epoxy resin material using a ceramic material as a filler. The insulating plate 6b may also be called an insulating layer or an insulating film.

[0024] The circuit boards 6c are metal layers such as copper foil, and are formed in plurality on the insulating plate 6b, for example. The circuit boards 6c are formed in island shapes on the insulating plate 6b while being electrically insulated from each other.

[0025] The semiconductor element 7 is bonded to the upper surface of the circuit board 6c by a bonding material S2 such as solder or sinter paste. That is, the semiconductor element 7 is disposed on the first surface 332 of the cover member 33 via the insulating substrate 6. A back electrode formed on the back surface of the semiconductor element 7 is electrically connected to the circuit board 6c via the bonding material S2. The bonding material S2 is formed using, for example, the same material as the bonding material S1. The bonding material S2 may also be a sintered material such as gold, silver, or copper.

[0026] The semiconductor element 7 is formed of a semiconductor substrate made of, for example, silicon (Si), silicon carbide (SiC), gallium nitride (GaN), diamond, or the like, and has a rectangular shape in plan view.

[0027] The semiconductor element 7 is, for example, a switching element such as an IGBT (Insulated Gate Bipolar Transistor), a power MOSFET (Metal Oxide Semiconductor Field Effect Transistor), etc. This type of semiconductor element 7 has, for example, a positive electrode as a main electrode on the back surface and a negative electrode as a main electrode on the front surface.

[0028] The semiconductor element 7 may be a diode element such as an SBD (Schottky Barrier Diode) or a PiN (P-intrinsic-N) diode. This type of semiconductor element 7 has a cathode electrode as a main electrode on the back surface and an anode electrode as a main electrode on the front surface. Alternatively, the semiconductor element 7 may be an RC (Reverse Conducting)-IGBT, which combines an IGBT and an FWD (Free Wheeling Diode) into a single chip, or an RB (Reverse Blocking)-IGBT, which has sufficient withstand voltage against reverse bias.

[0029] The shape, number, and location of the semiconductor elements 7 can be changed as appropriate. The semiconductor elements 7 according to this embodiment may be vertical switching elements in which functional elements such as transistors are formed on a semiconductor substrate, or may be horizontal switching elements.

[0030] One end of a metal wiring board 8 is joined to the upper electrode of the semiconductor element 7 by a bonding material S3 such as solder or sinter paste. The metal wiring board 8 constitutes the main wiring through which the main current flows. The metal wiring board 8 is formed by pressing or the like using a metal material such as copper, copper alloy, aluminum alloy, or iron alloy.

[0031] The other end of the metal wiring board 8 is bonded, for example, by a bonding material S3 to another circuit board 6c other than the circuit board 6c on which the semiconductor element 7 is disposed. One end of a main terminal for external connection (any of the P terminal 11, N terminal 12, and M terminal 13) may be bonded to this other circuit board 6c by a bonding material S4 such as solder or sinter paste, or may be bonded via the bonding material S4 and a metal block 16. In this embodiment, the circuit board 6c and one end of the main terminals 11 to 13 for external connection are bonded using both the bonding material S4 and the metal block 16. The shape of the metal wiring board 8 shown in FIG. 2 is merely an example and can be modified as appropriate. The metal wiring board 8 is, for example, a lead frame, a clip, a ribbon, a wire, or the like.

[0032] The case member 4 is formed in the shape of a rectangular frame with an opening in the center, and has a shape that follows the outer shape of the cooler 3 (which may also be called the cover member 33). The case member 4 is made of a thermoplastic resin such as PPS resin (polyphenylene sulfide resin) or PBT resin (polybutylene terephthalate resin).

[0033] The case member 4 is bonded to a second surface 333 (described later) at the outer edge of the cover member 33 with an adhesive (not shown). As a result, the three semiconductor modules 2 arranged on a first surface 332 (the upper surface of the cover member 33) at the center of the cover member 33 are housed in a central opening of the case member 4. In other words, the case member 4 is arranged on the cooler 3 and serves as a frame-shaped case member that surrounds the semiconductor modules 2 including the insulating substrates 6 and semiconductor elements 7.

[0034] The adhesive that bonds the bonding surface (lower surface 4a) of the case member 4 and the second surface 333 of the cover member 33 is, for example, a silicone adhesive or an epoxy adhesive. This adhesive may contain a filler such as ceramic. Bonding the lower surface 4a of the case member 4 and the second surface 333 of the cover member 33 with an adhesive prevents leakage of the sealing resin 5 filled inside the case member 4.

[0035] A control terminal 10 for control and main terminals for external connection (P terminal 11, N terminal 12, M terminal 13) are attached to the case member 4. The terminals 10 to 13 are formed from a metal material such as copper, copper alloy, aluminum alloy, or iron alloy. The surfaces of the terminals 10 to 13 may be Ni-plated to improve solder wettability and prevent rust.

[0036] The control terminal 10 is embedded by insert molding in one of a pair of walls opposing each other in the short-side direction (Y direction) of the case member 4, the wall on the positive side in the Y direction. One end of the control terminal 10 is electrically connected to a control electrode of the semiconductor element 7 inside the semiconductor module 2 via a wiring member such as a wire. The one end of the control terminal 10 may also be electrically connected to a control IC that controls the semiconductor element 7 inside the semiconductor module 2 via a wiring member such as a wire. An intermediate portion between one end and the other end of the control terminal 10 is embedded in the case member 4. The other end of the control terminal 10 extends from the upper surface 4b of the case member 4. The other end of the control terminal 10 may be electrically connected to an external driver circuit (not shown). For example, ten control terminals 10 are arranged per semiconductor module 2.

[0037] Among the main terminals for external connection, the P terminal 11 and the N terminal 12 are embedded by insert molding in a pair of wall portions opposing each other in the lateral direction (Y direction) of the case member 4, on the negative side in the Y direction. The M terminal 13 is embedded by insert molding in a pair of wall portions opposing each other in the lateral direction (Y direction) of the case member 4, on the positive side in the Y direction. As described above, one end of the main terminals 11 to 13 is joined to the circuit board 6c inside the semiconductor module 2 via the bonding material S4 and the metal block 16. More specifically, one end of the P terminal 11 is electrically connected to the collector electrode of the upper arm of the switching element having upper and lower arms. One end of the N terminal 12 is electrically connected to the emitter electrode of the lower arm of the switching element having upper and lower arms. One end of the M terminal 13 is electrically connected to the emitter electrode of the upper arm and the collector electrode of the lower arm of the switching element having upper and lower arms. Intermediate portions between one end and the other end of the main terminals 11 to 13 are embedded in the case member 4. The other ends of the main terminals 11 to 13 extend from the upper surface 4b of the case member 4, extend toward the side surface of the case member 4, and reach the side surface of the case member 4.

[0038] In this way, the main terminals 11 to 13 have a shape in which the other ends extend outward from the upper surface 4b of the case member 4 and reach the side surface of the case member 4, and as will be described later, by filling the case member 4 with sealing resin 5, one end is electrically connected to the semiconductor element 7 while being sealed in the sealing resin 5.

[0039] A plurality of recesses 9 are formed on the upper surface 4b of the case member 4, and a nut 14 is fitted into each of the recesses 9. The recesses 9 may also be referred to as nut holders. The recesses 9 hold the nuts 14 for fixing external bus bars 40 to the main terminals 11 to 13 for external connection with bolts 15. The external bus bars 40 are electrically connected to an external device (not shown). In this way, the other ends of the main terminals 11 to 13 are electrically connected to the external device via the external bus bars 40.

[0040] A total of three main terminals, namely, a P terminal 11, an N terminal 12, and an M terminal 13, are connected to one semiconductor module 2. In this embodiment, since three semiconductor modules 2 are provided, there are a total of nine main terminals and nine recesses 9.

[0041] As described above, one ends of the main terminals 11 to 13 are joined to the circuit board 6c via the joining material S4 and the metal block 16. Meanwhile, fastening holes are formed in the other ends of the main terminals 11 to 13. The other ends of the main terminals 11 to 13 are arranged on the upper surface 4b of the case member 4 so that the fastening holes are concentric with the nuts 14 held in the recesses 9. Furthermore, on the upper surfaces of the other ends of the main terminals 11 to 13, fastening holes of the main terminals 11 to 13 and fastening holes formed in the external bus bar 40 are arranged so that they are concentric, and bolts 15 are passed through the fastening holes. The bolts 15 are further passed through the nuts 14. The external bus bar 40 is fastened to the main terminals 11 to 13 by the nuts 14 and the bolts 15. As a result, the other ends of the main terminals 11 to 13 are mechanically and electrically connected to the external bus bar 40.

[0042] The shapes, locations, numbers, etc. of the terminals 10 to 13 described above are merely examples, and the shapes, locations, numbers, etc. of the terminals 10 to 13 are not limited to the above examples and can be changed as appropriate.

[0043] The space defined by joining the lower surface 4a of the case member 4 and the second surface 333 of the cover member 33 is filled with sealing resin 5. The upper surface of the sealing resin 5 is located at the same level as or lower than (negative side in the Z direction than) the upper surface 4b of the case member 4. This seals the various components constituting the semiconductor module 2 within the space. The sealing resin 5 seals at least the insulating substrate 6, the semiconductor element 7, and the main terminals 11 to 13 between their ends and the portions embedded in the case member 4, as well as the first surface 332 and the second surface 333 of the cover member. This allows insulation between the semiconductor element 7, the circuit board 6c, the main terminals 11 to 13, and the cover member 33 to be maintained.

[0044] In this way, the case member 4 and the sealing resin 5 are configured as insulating members that seal the various components that make up the semiconductor module 2.

[0045] The sealing resin 5 is made of a thermosetting resin. The sealing resin 5 preferably contains at least one of epoxy, silicone, urethane, polyimide, polyamide, and polyamideimide. For example, an epoxy resin mixed with a filler is suitable for the sealing resin 5 in terms of insulation, heat resistance, and heat dissipation.

[0046] A plurality of (six in this embodiment) through holes 4c are formed along the outer periphery of the case member 4. The through holes 4c are holes through which bolts 50 for fixing the semiconductor device 1 are inserted.

[0047] Next, the detailed configuration of the cooler 3 will be described.

[0048] The bottom plate 31 is a flat plate-like body (i.e., a flat plate) having a rectangular shape in a plan view and a predetermined thickness. The outer shape of the bottom plate 31 corresponds to the outer shape of the case member 4. That is, the longitudinal direction of the bottom plate 31 extends in the left-right direction (X direction) of the semiconductor device 1, and the lateral direction of the bottom plate 31 extends in the front-rear direction (Y direction) of the semiconductor device 1. The outer peripheral end face of the bottom plate 31 is disposed so as to reach the side face of the case member 4. The bottom plate 31 is formed, for example, from an aluminum alloy with good heat dissipation properties. The surface of the bottom plate 31 may be Ni-plated for rust prevention or the like. Furthermore, the thickness of the bottom plate 31 is preferably thicker than the thickness of the cover member 33, as will be described in detail later.

[0049] An inlet 31a for introducing cooling water into a flow path formed by the cooler 3 and an outlet 31b for discharging cooling water from this flow path are formed in predetermined locations on the bottom plate 31. The inlet 31a and the outlet 31b are formed as through-holes that penetrate the bottom plate 31 in the thickness direction. The inlet 31a and the outlet 31b have an elongated hole shape that is long in the X direction in a plan view. The inlet 31a and the outlet 31b are arranged so as to face each other diagonally with the multiple fins 32 sandwiched between them in the Y direction. The shapes and locations of the inlet 31a and the outlet 31b are not limited to these and can be changed as appropriate.

[0050] 2, an inlet-side flow path 102 communicating with the inlet 31a and an outlet-side flow path 104 communicating with the outlet 31b are formed in the housing 100 of the inverter device. The cooling water introduced from the inlet-side flow path 102 through the inlet 31a into the flow path in the cooler 3 is discharged to the outlet-side flow path 104 through the outlet 31b.

[0051] In this embodiment, the cooling water inlet 31a and outlet 31b are not configured to protrude from the sides of the bottom plate 31, but are formed on the underside 311 of the bottom plate 31. Therefore, the cooler 3 can be connected to the cooling water flow path of the installation destination simply by attaching the semiconductor device 1 to the housing 100 of the inverter device, which is the installation destination, without using any dedicated joints, etc. This simplifies the configuration and reduces the number of installation steps.

[0052] A plurality of (six in this embodiment) through holes 31c are formed along the outer periphery of the bottom plate 31. The through holes 31c are holes through which bolts 50 for fixing the semiconductor device 1 are inserted.

[0053] FIG. 5 is a plan view of the cooler 3 without the cover member 33, that is, showing only the bottom plate 31 and the plurality of fins 32 of the cooler 3. In FIG.

[0054] As shown in FIG. 5, the bottom plate 31 has an upper surface central portion (rectangular region 312 in plan view (region surrounded by a dashed line in FIG. 5)) at the center of the upper surface, and an upper surface peripheral portion (peripheral region 313 in plan view) on the outer periphery of the rectangular region 312 in plan view. The rectangular region 312 in plan view is provided with a plurality of fins 32 (assembly 320 of fins 32), an inlet 31a, and an outlet 31b. The rectangular region 312 in plan view is an area facing a top plate 33a of the cover member 33 described later, and is an area through which cooling water flows. The peripheral region 313 in plan view is an area to be joined by brazing or the like to a lower surface 334 of a plate-shaped portion 33c of the cover member 33 described later.

[0055] The fins 32 are, for example, pins having a rectangular column shape (square pins). The multiple fins 32 are arranged at a predetermined interval in a rectangular region 312 in a plan view at the center of the upper surface of the bottom plate 31. Therefore, the cooling water flows into the rectangular region 312 from an inlet 31a in a plan view, passes through channels between the multiple fins 32, and flows out from an outlet 31b. The outer shape of the assembly 320 of the fins 32 is a substantially rectangular parallelepiped shape that is contained within the rectangular region 312 in a plan view. Note that the outer shape of the assembly 320 is not limited to a substantially rectangular parallelepiped shape, and may be another shape.

[0056] More specifically, the fins 32 are formed in a diamond shape in a plan view, and the opposing direction of a pair of diagonally opposing corners coincides with the short-side direction (Y direction) of the cooler 3. The fins 32 protrude a predetermined length from the upper surface of the bottom plate 31 toward the positive side of the Z direction. Preferably, the fins 32 have a length that extends from the upper surface of the bottom plate 31 (rectangular region 312 in a plan view) to a heat dissipation surface 331 of a top plate 33a of the cover member 33 (described later). Note that the configuration of the fins 32 is not limited to this and can be modified as appropriate. For example, the shape of the fins 32 may be a cylinder, a truncated pyramid, or a truncated cone instead of the rectangular column shown in FIG. 5. Furthermore, the assembly 320 may be configured such that a plurality of blade-shaped fins 32 extending in the Y direction are arranged at a predetermined pitch in the X direction.

[0057] The fins 32 are made of, for example, the same metal material as the bottom plate 31. The fins 32 may be brazed or implanted in a rectangular region 312 in a plan view at the center of the top surface of the bottom plate 31, or may be integrally formed with the bottom plate 31 by cutting, forging, or casting. In the latter case, the cooler 3 is made of two parts (an integrally formed product of the bottom plate 31 and the fins 32, and a cover member 33). This simplifies the configuration of the cooler 3, reducing the number of manufacturing steps and manufacturing costs. Preferably, the tips of the fins 32 integrally formed with the bottom plate 31 are brazed to the heat dissipation surface 331 of the top plate 33a. When the bottom plate 31 and the fins 32 are separate parts, for example, one end of the fins 32 is brazed to the top surface of the bottom plate 31, and the other end is brazed to the heat dissipation surface 331 of the top plate 33a.

[0058] As shown in FIG. 3 , the cover member 33 is a rectangular plate-like body in plan view and has a predetermined thickness. The cover member 33 includes a top plate 33a, a peripheral wall portion 33b, and a plate-like portion 33c. The top plate 33a is a central portion of the cover member 33 that protrudes upward. The peripheral wall portion 33b is a frame-like portion that connects the outer periphery of the top plate 33a located above with the inner periphery of the plate-like portion 33c located below in the Z direction. The plate-like portion 33c is a portion of the cover member 33 located below the outer periphery. Like the bottom plate 31, the outer shape of the cover member 33 corresponds to the outer shape of the case member 4. That is, the outer peripheral end face of the cover member 33 is disposed so as to reach the side surface on the underside 4a side of the case member 4. The thicknesses of the top plate 33a, the peripheral wall portion 33b, and the plate-like portion 33c may be substantially the same. Alternatively, the plate-like portion 33c may be thicker than the top plate 33a.

[0059] The outer peripheral end surface of the bottom plate 31, which forms the outer peripheral end surface of the cooler 3, and the outer peripheral end surface of the plate-shaped portion 33c are shaped to reach the side surface of the case member 4, so that the outer peripheral end surface of the cooler 3 and the side surface of the case member 4 are flush with each other.

[0060] The top plate 33a, the peripheral wall portion 33b, and the plate-shaped portion 33c may be integrally formed as a processed sheet metal product. The cover member 33 is made of, for example, an aluminum alloy with good heat dissipation properties, similar to the bottom plate 31. The surface of the cover member 33 may be Ni-plated to improve solder wettability and prevent rust.

[0061] 2, the semiconductor module 2 is disposed on a first surface 332 of a top plate 33a, which is the uppermost surface of the cover member 33. Therefore, the heat generated by the semiconductor module 2 is mainly conducted to the cover member 33. Therefore, the thinner the cover member 33, the more improved the heat dissipation performance of the cooler 3. Therefore, the thickness of the cover member 33 is preferably 0.5 mm or more and less than 2 mm.

[0062] The top plate 33a has an area that occupies the entire rectangular area 312 in a plan view at the center of the upper surface of the bottom plate 31, and is disposed above the assembly 320 so as to cover the entire fins 32 (assembly 320). The lower surface of the top plate 33a forms a heat dissipation surface 331 that defines a flow path for cooling water above the assembly 320. Each of the fins 32 is brazed to the heat dissipation surface 331 of the cover member 33. Note that the cover member 33 may be integrally formed with the fins 32 by cutting or casting. In this case, the bottom plate 31 and the fins 32 are not an integrally formed product but are separately formed parts.

[0063] The insulating substrate 6 is bonded with a bonding material S1 to a first surface 332 (the upper surface of the top plate 33a) of the top plate 33a, which is on the opposite side to the heat dissipation surface 331. That is, three semiconductor modules 2 aligned in the X direction are arranged on the upper surface of the top plate 33a. The heat generated by the three semiconductor modules 2 is mainly conducted to the top plate 33a and cooled by cooling water flowing through the flow paths of the cooler 3 from the heat dissipation surface 331 and fins 32 of the top plate 33a.

[0064] The peripheral wall portion 33b is formed in a rectangular frame shape along the outer periphery of the top plate 33a. The peripheral wall portion 33b protrudes from the edge of the top plate 33a toward the negative side in the Z direction and reaches the inner edge of the plate-shaped portion 33c. In this way, the peripheral wall portion 33b surrounds the outer periphery of the multiple fins 32 (assembly 320) located below the top plate 33a. The top plate 33a, peripheral wall portion 33b, and bottom plate 31 cover the entire assembly 320.

[0065] The protruding height of the peripheral wall portion 33b on the negative side in the Z direction is equal to or greater than the protruding height of the fins 32. Preferably, the protruding height of the peripheral wall portion 33b on the negative side in the Z direction is approximately equal to the protruding height of the fins 32. The protruding height of the peripheral wall portion 33b on the negative side in the Z direction defines the distance between the heat dissipation surface 331 of the top plate 33a and the rectangular region 312 in plan view at the center of the upper surface of the bottom plate 31 (in other words, the overall length in the Z direction of the space defined by the top plate 33a, the peripheral wall portion 33b, and the bottom plate 31). Therefore, the fins 32 extend over the entire length in the Z direction of this defined space (i.e., from the rectangular region 312 in plan view to the heat dissipation surface 331). As a result, a large surface area of ​​the fins 32 within the space is ensured, and the heat dissipation performance of the cooler 3 is improved.

[0066] The protruding height of the fins 32 is preferably 3 mm or more and 20 mm or less. If the protruding height of the fins 32 is less than 3 mm, the surface area of ​​the fins 32 is small, which reduces the heat dissipation performance of the cooler 3. If the protruding height of the fins 32 exceeds 20 mm, the height position of the top plate 33a becomes high, making it difficult to keep the overall height of the semiconductor device 1 low.

[0067] The plate-shaped portion 33c is formed to extend outward from a portion covering the plurality of fins 32 (assembly 320) (i.e., a box-shaped body formed by the top plate 33a and the peripheral wall portion 33b). More specifically, the plate-shaped portion 33c is formed to extend outward from the box-shaped body along the XY plane from the entire periphery of the lower end of the peripheral wall portion 33b. Therefore, the upper surface (second surface 333) of the plate-shaped portion 33c is lower in height in the Z direction than the upper surface (first surface 332) of the top plate 33a, which is positioned at the same height as the upper end of the peripheral wall portion 33b. In other words, in the height direction (Z direction) from the bottom plate 31 toward the heat dissipation surface 331, the upper surface of the plate-shaped portion 33c is lower in height than the upper surface of the top plate 33a.

[0068] The outer shape of the plate-shaped portion 33c defines the maximum outer shape of the cover member 33 in a plan view and corresponds to the outer shape of the case member 4. The plate-shaped portion 33c is formed facing and overlapping with the peripheral portion of the upper surface of the bottom plate 31 (peripheral region 313 in a plan view) that surrounds a rectangular region 312 in a plan view at the center of the upper surface of the bottom plate 31 in a plan view. The peripheral region 313 in a plan view of the bottom plate 31 and a lower surface 334 of the plate-shaped portion 33c are joined by brazing or the like. As a result, the bottom plate 31 closes the lower opening of the box-shaped body formed by the top plate 33a and the peripheral wall portion 33b, and a flow path for cooling water for cooling the semiconductor module 2 is formed by the space surrounded by the bottom plate 31, the multiple fins 32, and the cover member 33.

[0069] A plurality of (six in this embodiment) through holes 335 are formed in the plate-like portion 33c along the outer periphery. The through holes 335 are holes for inserting bolts 50 for fixing the semiconductor device 1. The bottom plate 31 and the plate-like portion 33c are joined so that the through holes 31c formed in the bottom plate 31 and the through holes 335 corresponding to each through hole 31c are concentric. For convenience, the through holes formed by the through holes 31c and the through holes 335 communicating with each other are denoted by the reference numeral 34.

[0070] The case member 4, which is formed in a rectangular frame shape in a plan view, is bonded with an adhesive to the upper surface (second surface 333) of the plate-like portion 33c, which also has a rectangular frame shape in a plan view. As a result, the three semiconductor modules 2 are housed in the central opening of the case member 4, and the top plate 33a and peripheral wall portion 33b, which form a box-like body, are also housed in the central opening of the case member 4.

[0071] In this way, the case member 4 is disposed on the upper surface (second surface 333) of the plate-like portion 33c, which is located at a lower height position than the upper surface (first surface 332) of the top plate 33a, which is the uppermost surface of the cover member 33. Therefore, in this embodiment, as shown in Fig. 2, the height of the semiconductor device 1 is kept lower than the total height of the cooler 3 and the case member 4. Therefore, it is possible to mount the semiconductor device 1 in a location where the space in the height direction (Z direction) is low.

[0072] The difference in height in the Z direction between the upper surface (first surface 332) of the top plate 33a and the upper surface (second surface 333) of the plate-like portion 33c is preferably 3 mm or more and 20 mm or less. If this difference in height is less than 3 mm, only fins 32 with a short overall length can be arranged in the cooler 3. In this case, the surface area of ​​the fins 32 is small, which reduces the heat dissipation performance of the cooler 3. Also, it is difficult to ensure the creepage distance (described in detail later) between the cooler 3 and the main terminals 11 to 13. Furthermore, if this difference in height exceeds 20 mm, the height position of the top plate 33a becomes high, making it difficult to keep the overall height of the semiconductor device 1 low.

[0073] The case member 4 is joined to the upper surface (second surface 333) of the plate-like portion 33c so that each of the multiple through holes 4c is concentric with the corresponding through hole 34. A fixing bolt 50 is passed through each of the through holes formed by the through holes 4c and the through holes 34 communicating with each other. The inverter device housing 100 has female threaded holes 52 with female threads formed on its inner circumferential surface. The tip of the bolt 50 passed through the through hole formed by the through holes 4c and the through holes 34 communicating with each other is fastened to the female threaded hole 52, thereby fixing the semiconductor device 1 to the inverter device housing 100.

[0074] Since the cooler 3 is made of a metal material, it is necessary to ensure a creepage distance between the semiconductor module 2 and the cooler 3. Specifically, it is necessary to ensure a creepage distance (symbol D in FIG. 2) between the cooler 3 and the main terminals 11 to 13 exposed from the insulating sealing resin 5.

[0075] In this embodiment, the main terminals 11 to 13 are arranged so as to reach the side surface on the upper surface 4b side of the case member 4. Also, the outer peripheral end surface of the cooler 3 is arranged so as to reach the side surface on the lower surface 4a side of the case member 4. Therefore, in order to ensure the creepage distance D, it is necessary to increase the height dimension of the case member 4 (i.e., the dimension from the lower surface 4a to the upper surface 4b of the case member 4). Therefore, in the conventional configuration (a configuration in which the case member is arranged on the top plate of the cooler), it is difficult to reduce the overall height of the semiconductor device in order to ensure the creepage distance D. In contrast, in this embodiment, the case member 4 is arranged on the upper surface (second surface 333) of the plate-shaped portion 33c, which is lower than the upper surface (first surface 332) of the top plate 33a. Therefore, even if the height dimension of the case member 4 is increased to ensure the creepage distance D, the overall height of the semiconductor device can be easily reduced.

[0076] The mounting surface 106 of the inverter device housing 100 on which the semiconductor device 1 is to be mounted is a flat surface, and is formed with grooves 108 and 110 that are annular in plan view. The groove 108 is formed so as to surround the opening of the inlet-side flow path 102 formed on the mounting surface 106. The groove 110 is formed so as to surround the opening of the outlet-side flow path 104 formed on the mounting surface 106.

[0077] An O-ring 112 is fitted in each of the grooves 108, 110. The semiconductor device 1 is attached to the installation surface 106 via the O-ring 112, and is fixed to the housing 100 with bolts 50 inserted through each of the through holes formed by the through holes 4c and 34 communicating with each other. When the semiconductor device 1 is attached to the housing 100, the lower surface 311 of the bottom plate 31 comes into contact with the installation surface 106. The O-ring 112 ensures sealing between the installation surface 106 and the lower surface 311.

[0078] When the semiconductor device 1 is fixed to the housing 100 with the bolts 50, if the bottom plate 31 is too thin, the rigidity of the bottom plate 31 is low, and the bottom plate 31 may be unable to withstand the reaction force of the O-ring 112 and may deform. If the bottom plate 31 deforms, the sealing between the mounting surface 106 and the underside 311 of the bottom plate 31 cannot be ensured. Therefore, to prevent this type of deformation from occurring, the thickness of the bottom plate 31 is preferably 2 mm or more. Thus, the thickness of the bottom plate 31 is thicker than the thickness of the cover member 33 to prevent the sealing from being impaired by deformation. Furthermore, the thickness of the bottom plate 31 is preferably 10 mm or less. If the thickness is greater than 10 mm, the overall thickness of the semiconductor device 1 becomes thicker and the overall weight becomes heavier, which is not preferable.

[0079] 3 and 4, the cooler 3 is formed with a pair of through holes 35 penetrating in the Z direction. These through holes 35 are formed by communication between a through hole 31d formed in the bottom plate 31 and a through hole 336 formed in the plate-like portion 33c. FIG. 6 shows a cross-sectional view of a portion of the configuration of the semiconductor device 1 (the configuration including the through holes 35). For convenience, FIG. 6 also shows a cross-section of the housing 100 of the inverter device, which is the installation destination.

[0080] 6, bosses 4d that protrude toward the negative side in the Z direction are formed on the lower surface 4a of the case member 4. The bosses 4d are formed at positions corresponding to the pair of through holes 35 in a plan view. Each boss 4d is inserted into the corresponding through hole 35. By inserting each of the pair of bosses 4d into the corresponding through hole 35, the position of the case member 4 in the X direction and the Y direction relative to the cooler 3 is determined.

[0081] Recesses 114 are formed on the mounting surface 106 of the housing 100. In plan view, the recesses 114 are formed at positions corresponding to the pair of bosses 4d. The tips of the bosses 4d that have passed through the through holes 35 are inserted into the recesses 114. This determines the position of the semiconductor device 1 in the X and Y directions relative to the mounting surface 106.

[0082] As described above, according to this embodiment, the height of the semiconductor device 1 is kept low by placing the case member 4 on the upper surface (second surface 333) of the plate-shaped portion 33c, which is lower in height than the upper surface (first surface 332) of the top plate 33a, which is the top surface of the cover member 33.

[0083] In the above embodiment, the insulating substrate 6 and the semiconductor element 7 are configured to be rectangular in plan view, but the present invention is not limited to this. These components may be configured to be polygonal in plan view other than rectangular.

[0084] In the above embodiment, three unit modules are arranged in the X direction in the order of U phase, V phase, and W phase, but the present invention is not limited to this. The number and arrangement direction of the unit modules can be changed as appropriate.

[0085] FIG. 7 is a cross-sectional view showing the internal structure of a semiconductor device 1 according to a first modification of the above embodiment. In the semiconductor device 1 according to the first modification, a rectangular region 312 in plan view located at the center of a bottom plate 31 has a surface recessed by one step toward the negative side in the Z direction relative to a peripheral region 313 in plan view located on the outer periphery of the rectangular region 312 in plan view. In other words, the bottom plate 31 is not a flat plate as in the above embodiment, but has a shape in which the central portion of the upper surface (rectangular region 312 in plan view) protrudes in a direction away from the heat dissipation surface 331 relative to the peripheral region 313 in plan view. Furthermore, in the first modification, the fins 32 extend from the heat dissipation surface 331 of the top plate 33 a to the rectangular region 312 in plan view, which is recessed by one step relative to the peripheral region 313 in plan view. That is, in the first modification, the overall length of the fins 32 in the Z direction is longer than in the above embodiment, and a larger surface area of ​​the fins 32 is ensured, thereby further improving the heat dissipation performance of the cooler 3.

[0086] 8 is a cross-sectional view showing the internal structure of the semiconductor device 1 according to Modification 2 of the above embodiment. In Modification 2, the case member 4 is formed with a protruding portion 4e (skirt portion) that protrudes in the negative Z direction from the lower surface 4a of the case member 4 (the joint surface with the upper surface (second surface 333) of the plate-like portion 33c) along the entire periphery of the side surface of the case member 4.

[0087] The protrusion 4e covers at least a portion of the outer peripheral end face of the cooler 3 that is closer to the case member 4, over the entire circumference of the outer peripheral end face of the cooler 3. Specifically, approximately the upper half of the outer peripheral end face of the cooler 3 that is exposed directly below the case member 4 is covered by the protrusion 4e of the case member 4, which is a resin member. Therefore, as shown in Fig. 8, the creepage distance D extends from the upper surface 4b of the case member 4 on which the main terminals 11 to 13 are arranged, beyond the lower surface 4a of the case member 4, to the outer peripheral end face position of the cooler 3 that is not covered by the protrusion 4e (exposed to the outside).

[0088] That is, in Modification 2, a longer creepage distance D is ensured compared to the above embodiment. Therefore, application to high-voltage devices requiring a long creepage distance D becomes possible. Furthermore, when the creepage distance D is configured to be the same length as in the above embodiment, the height dimension of the case member 4 (i.e., the dimension from the lower surface 4a to the upper surface 4b of the case member 4) can be reduced compared to the above embodiment, and the overall height of the semiconductor device 1 can be reduced even further.

[0089] 9 is a cross-sectional view showing the internal structure of the semiconductor device 1 according to a third modification of the above embodiment. In the third modification, one end of each of the main terminals 11 to 13 is electrically connected to the semiconductor element 7 while being sealed in the sealing resin 5, extends linearly in the Y direction so as to penetrate the case member 4, and the other end extends to the outside from the side surface of the case member 4. The intermediate portions between one end and the other end of the main terminals 11 to 13 are embedded in the case member 4 by insert molding. Thus, in the third modification, the main terminals 11 to 13 have a simple linear shape without bends from one end to the other, which is advantageous for reducing the number of manufacturing steps and manufacturing costs.

[0090] FIG. 10 is a cross-sectional view showing the internal structure of a semiconductor device 1 according to a fourth modification of the above embodiment. In the fourth modification, the main terminals 11 to 13 have a linear shape, similar to the third modification. In the third modification, the case member 4 is hollowed out directly below the other ends of the main terminals 11 to 13, and is not interposed between the cover member 33 and the other ends of the main terminals 11 to 13. Therefore, in the third modification, the creepage distance D is the distance D1 from the second surface 333 of the cover member 33 to the underside of the other ends of the main terminals 11 to 13. In contrast, the case member 4 of the fourth modification has an outer edge 4f formed directly below the other ends of the main terminals 11 to 13. The case member 4 has a shape including a first side surface 4g formed inward from the outer peripheral end surface of the cooler 3 and an outer edge 4f formed outward from the first side surface 4g directly below the other ends of the main terminals 11 to 13. As a result, the creepage distance D is the sum of the above-mentioned distance D1 and the dimension D2 of the outer edge portion 4f in the depth direction (Y direction).

[0091] That is, in Modification 4, a longer creepage distance D is ensured compared to Modification 3. Therefore, it is possible to apply Modification 4 to high-voltage devices that require a long creepage distance D. Furthermore, when the creepage distance D is configured to be the same length as in Modification 3, the height dimension of the case member 4 (i.e., the dimension from the lower surface 4a to the upper surface 4b of the case member 4) can be reduced compared to Modification 3, and the overall height of the semiconductor device 1 can be reduced even further.

[0092] Furthermore, although the present embodiment and modifications have been described, other embodiments may be combinations of the above-described embodiments and modifications in whole or in part.

[0093] Furthermore, the present embodiment is not limited to the above-described embodiments and modifications, and may be variously changed, substituted, or modified within the scope of the spirit of the technical idea. Furthermore, if the technical idea can be realized in a different way due to technological advances or other derived technologies, it may be implemented using that method. Therefore, the claims cover all embodiments that may fall within the scope of the technical idea.

[0094] For example, in the present embodiment, the semiconductor device 1 is described as including the case member 4 formed in a rectangular frame shape with an opening in the center and the sealing resin 5 filled in the case member 4, but the present invention is not limited to this. The case member 4 may be formed integrally with the sealing resin 5. In this case, the semiconductor device 1 can be produced by molding the various components that make up the semiconductor module 2 using a molding resin and a molding die.

[0095] The features of the above embodiment are summarized below. The semiconductor device according to the above embodiment comprises a bottom plate, a plurality of fins arranged on the bottom plate, and a cover member covering the plurality of fins, the cover member having a heat dissipation surface facing the bottom plate across the plurality of fins. The semiconductor device further comprises a cooler in which a flow path for cooling water is formed by the space surrounded by the bottom plate, the plurality of fins, and the cover member, a semiconductor element arranged on a first surface of the cover member opposite the heat dissipation surface via an insulating substrate, and an insulating member arranged on the cooler and sealing the insulating substrate and the semiconductor element. The cover member has a plate-like portion extending outward from the portion covering the plurality of fins, the plate-like portion being bonded to the bottom plate, the plate-like portion having a second surface, the insulating member being bonded to the second surface, and the second surface being lower in height than the first surface in the height direction from the bottom plate toward the heat dissipation surface.

[0096] The semiconductor device according to the above embodiment further includes a terminal provided on the insulating member, one end of which is electrically connected to the semiconductor element while being sealed in the insulating member, and the other end of which extends to the outside from the top surface or side surface of the insulating member.

[0097] The semiconductor device according to the above embodiment further includes a terminal provided on the insulating member, one end of which is electrically connected to the semiconductor element while being sealed in the insulating member, and the other end of which extends outward from the top surface of the insulating member and reaches the side surface of the insulating member.

[0098] The semiconductor device according to the above embodiment further includes a terminal provided on the insulating member, one end of which is electrically connected to the semiconductor element while being sealed in the insulating member, and the other end of which extends outward from the side of the insulating member, and has a shape that extends linearly from the one end to the other end.

[0099] In the semiconductor device according to the above embodiment, the thickness of the bottom plate is greater than the thickness of the cover member.

[0100] In the semiconductor device according to the above embodiment, the thickness of the bottom plate is 2 mm or more.

[0101] In the semiconductor device according to the above embodiment, the cover member has a thickness of 0.5 mm or more and less than 2 mm.

[0102] In the semiconductor device according to the above embodiment, the difference in height between the first surface and the second surface is 3 mm or more and 20 mm or less.

[0103] In the semiconductor device according to the above embodiment, the lower surface of the insulating member and the second surface of the cover member are joined together with an adhesive.

[0104] In the semiconductor device according to the above embodiment, a boss is formed on the lower surface of the insulating member, and holes through which the boss is inserted are formed in the bottom plate and the plate-like portion.

[0105] In the semiconductor device according to the above embodiment, the bottom plate and the plurality of fins are integrally formed.

[0106] In the semiconductor device according to the above embodiment, the cover member and the plurality of fins are integrally formed.

[0107] In the semiconductor device according to the above embodiment, the insulating member includes a frame-shaped case member that surrounds the insulating substrate and the semiconductor element, and a sealing resin that seals the insulating substrate, the semiconductor element, and the first surface and the second surface of the cover member inside the case member.

[0108] In the semiconductor device according to the above embodiment, the plurality of fins are provided in the central portion of the upper surface of the bottom plate, and the surface of the plate-shaped portion opposite the second surface is brazed to the peripheral portion of the upper surface surrounding the central portion of the upper surface of the bottom plate.

[0109] In the semiconductor device according to the above embodiment, the bottom plate has a shape in which the central portion of the top surface protrudes in a direction away from the heat dissipation surface relative to the peripheral portion of the top surface.

[0110] In the semiconductor device according to the above embodiment, the bottom plate is a flat plate.

[0111] In the semiconductor device according to the above embodiment, the outer peripheral end surface of the bottom plate and the outer peripheral end surface of the plate-like portion form the outer peripheral end surface of the cooler, and the outer peripheral end surface of the cooler and the side surface of the insulating member are flush with each other.

[0112] In the semiconductor device according to the above embodiment, the outer peripheral end surface of the bottom plate and the outer peripheral end surface of the plate-shaped portion form the outer peripheral end surface of the cooler, and the insulating member has a protrusion formed around the entire circumference of the side surface of the insulating member that protrudes beyond the joint surface with the second surface, and the protrusion covers at least a portion of the outer peripheral end surface of the cooler that is closer to the insulating member around the entire circumference of the outer peripheral end surface of the cooler.

[0113] In the semiconductor device according to the above embodiment, the outer peripheral end surface of the bottom plate and the outer peripheral end surface of the plate-shaped portion form the outer peripheral end surface of the cooler, and the insulating member has a shape including a first side surface formed inward from the outer peripheral end surface of the cooler, and an outer edge portion formed outward from the first side surface directly below the terminal. [Industrial Applicability]

[0114] As described above, the present invention has the effect of making it possible to reduce the height of the device, and is particularly useful for semiconductor devices. [Explanation of symbols]

[0115] 1: Semiconductor device 2: Semiconductor module 3:Cooler 4: Case material 4d: Boss 5: Sealing resin 6: Insulating substrate 6a: Heat sink 6b: Insulating plate 6c: Circuit board 7: Semiconductor elements 8: Metal wiring board 9: Nut holder 10: Control terminal 11 :P terminal 12 :N terminal 13 :M terminal 14: Nut 15: Bolt 31: Bottom plate 31a: Entrance 31b: Outlet 32: Finn 33: Cover member 33a: Top plate 33b: Peripheral wall part 33c: Plate-shaped part 100: Housing 102: Inlet side flow path 104: Outlet side flow path 108,110: Groove 112: O-ring 114: Recess

Claims

1. a cooler including a bottom plate, a plurality of fins arranged on the bottom plate, and a cover member covering the plurality of fins, the cover member having a heat dissipation surface facing the bottom plate with the plurality of fins in between, wherein a flow path for cooling water is formed by a space surrounded by the bottom plate, the plurality of fins, and the cover member; a semiconductor element disposed on a first surface of the cover member opposite to the heat dissipation surface via an insulating substrate; an insulating member disposed on the cooler and sealing the insulating substrate and the semiconductor element; Equipped with the cover member has a plate-like portion extending outward from a portion covering the plurality of fins, and the plate-like portion is joined to the bottom plate; the plate-shaped portion has a second surface on the opposite side to the heat dissipation surface of the cover member, the insulating member is bonded onto the second surface; In a height direction from the bottom plate toward the heat dissipation surface, the second surface is lower in height than the first surface, the insulating member includes a frame-shaped case member that surrounds the insulating substrate and the semiconductor element, and a sealing resin that seals the insulating substrate, the semiconductor element, and a portion of the first surface and the second surface of the cover member inside the case member, The lower surface of the case member is joined to a portion other than the part of the second surface. Semiconductor device.

2. The insulating member further includes a terminal, One end of the terminal is electrically connected to the semiconductor element while being sealed in the insulating member, and the other end extends to the outside from the top surface or side surface of the insulating member. The semiconductor device according to claim 1 .

3. The insulating member further includes a terminal, One end of the terminal is electrically connected to the semiconductor element while being sealed in the insulating member, and the other end extends from the upper surface of the insulating member to the outside and reaches the side surface of the insulating member. The semiconductor device according to claim 1 .

4. The insulating member further includes a terminal, One end of the terminal is electrically connected to the semiconductor element while being sealed in the insulating member, and the other end extends from a side surface of the insulating member to the outside, and extends linearly from the one end to the other end. The semiconductor device according to claim 1 .

5. The thickness of the bottom plate is greater than the thickness of the cover member. The semiconductor device according to claim 1 .

6. The thickness of the bottom plate is 2 mm or more. The semiconductor device according to claim 5 .

7. The plate thickness of the cover member is 0.5 mm or more and less than 2 mm.

7. The semiconductor device according to claim 5.

8. The difference in height between the first surface and the second surface is 3 mm or more and 20 mm or less. The semiconductor device according to claim 1 .

9. the lower surface of the insulating member and the second surface of the cover member are joined together with an adhesive; The semiconductor device according to claim 1 .

10. A boss is formed on the bottom surface of the insulating member, a hole through which the boss is inserted is formed in the bottom plate and the plate-like portion; The semiconductor device according to claim 1 .

11. The bottom plate and the plurality of fins are integrally formed. The semiconductor device according to claim 1 .

12. The cover member and the plurality of fins are integrally formed. The semiconductor device according to claim 1 .

13. A cooler comprising a bottom plate, a plurality of fins arranged on the bottom plate, and a cover member covering the plurality of fins, the cover member having a heat dissipation surface facing the bottom plate across the plurality of fins, wherein a flow path for cooling water is formed by a space surrounded by the bottom plate, the plurality of fins, and the cover member; a semiconductor element disposed on a first surface of the cover member opposite to the heat dissipation surface via an insulating substrate; an insulating member disposed on the cooler and sealing the insulating substrate and the semiconductor element; Equipped with the cover member has a plate-like portion extending outward from a portion covering the plurality of fins, and the plate-like portion is joined to the bottom plate; the plate-shaped portion has a second surface on the opposite side to the heat dissipation surface of the cover member, the insulating member is bonded onto the second surface; In a height direction from the bottom plate toward the heat dissipation surface, the second surface is lower in height than the first surface, the plurality of fins are provided at the center of the upper surface of the bottom plate, The plate-shaped portion has a surface opposite to the second surface brazed to an upper surface peripheral portion surrounding a central portion of an upper surface of the bottom plate. Semiconductor device.

14. The bottom plate has a shape in which the central portion of the upper surface protrudes in a direction away from the heat dissipation surface relative to the peripheral portion of the upper surface. The semiconductor device according to claim 13.

15. The bottom plate is a flat plate. The semiconductor device according to claim 1 .

16. A cooler comprising a bottom plate, a plurality of fins arranged on the bottom plate, and a cover member covering the plurality of fins, the cover member having a heat dissipation surface facing the bottom plate across the plurality of fins, wherein a flow path for cooling water is formed by a space surrounded by the bottom plate, the plurality of fins, and the cover member; a semiconductor element disposed on a first surface of the cover member opposite to the heat dissipation surface via an insulating substrate; an insulating member disposed on the cooler and sealing the insulating substrate and the semiconductor element; Equipped with the cover member has a plate-like portion extending outward from a portion covering the plurality of fins, and the plate-like portion is joined to the bottom plate; the plate-shaped portion has a second surface on the opposite side to the heat dissipation surface of the cover member, the insulating member is bonded onto the second surface; In a height direction from the bottom plate toward the heat dissipation surface, the second surface is lower in height than the first surface, an outer peripheral end surface of the bottom plate and an outer peripheral end surface of the plate-shaped portion form an outer peripheral end surface of the cooler; The outer peripheral end surface of the cooler and the side surface of the insulating member are flush with each other. Semiconductor device.

17. an outer peripheral end surface of the bottom plate and an outer peripheral end surface of the plate-shaped portion form an outer peripheral end surface of the cooler; the insulating member has a protruding portion formed on an entire periphery of a side surface of the insulating member, the protruding portion protruding from a joint surface with the second surface, the protrusion covers at least a portion of the outer peripheral end surface of the cooler that is closer to the insulating member, over the entire circumference of the outer peripheral end surface of the cooler; The semiconductor device according to claim 1 .

18. an outer peripheral end surface of the bottom plate and an outer peripheral end surface of the plate-shaped portion form an outer peripheral end surface of the cooler; The insulating member has a shape including a first side surface formed inward from an outer peripheral end surface of the cooler, and an outer edge portion formed outward from the first side surface immediately below the terminal. The semiconductor device according to any one of claims 5 to 17, which relies on claim 2.

19. The cover member is a plate-like body having a predetermined thickness and a convex shape in cross section. The semiconductor device according to claim 1 .

20. The cover member has a top plate and a peripheral wall portion, The peripheral wall portion surrounds the outer periphery of the plurality of fins. The semiconductor device according to claim 1 .

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