Semiconductor module and manufacturing method thereof

Abstract

To suppress damage of a resin mold part.SOLUTION: A connection terminal 15 has an internal terminal 15a which is formed into a plate shape, extends in one direction in a surface direction and is sealed in a resin mold part 19, and is exposed from an opening 193 formed in the resin mold part 19, an external terminal 15b which is connected to the internal terminal 15a in the opening 193 and projects from the resin mold part 19, and a tie bar remainder 15c which is connected to the internal terminal 15a, extends in a direction that crosses the extension direction of the internal terminal 15a and is along the surface direction of the internal terminal 15a, and has a projection part 150c projecting from the resin mold part 19, wherein in the connection terminal 15, a groove part 160 is formed between a part exposed from the opening 193 and the projection part 150c, the resin mold part 19 enters into the groove part 160, and in the groove part 160, an opening end on the projection part side is also covered with the resin mold part 19.SELECTED DRAWING: Figure 9

Description

[Technical Field]

[0001] The present invention relates to a semiconductor module and a method for manufacturing the same. [Background technology]

[0002] Conventionally, semiconductor modules have been proposed that have a semiconductor element, connection terminals connected to the semiconductor element, and a resin molded portion in which the semiconductor element and the connection terminals are integrally sealed with a molded resin (see, for example, Patent Document 1).

[0003] Such a semiconductor module is manufactured as follows: A terminal component member is prepared, in which connection terminals are connected to other components by tie bars, and the connection terminals of the terminal component member are electrically connected to semiconductor elements to form the component member. Next, the component member is placed in a mold so that the tie bars are sandwiched between the mold members. Next, molten resin is poured into the mold and solidified to form a resin molded portion. The tie bars are then cut to manufacture the semiconductor module. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Japanese Patent Publication No. 2022-048649 Summary of the Invention [Problem to be solved by the invention]

[0005] The present inventors are considering constructing a semiconductor module by forming an opening in a resin molded portion to expose a connection terminal and ultrasonically bonding another connection terminal to the opening. That is, the present inventors are considering a semiconductor module having an internal terminal disposed in the resin molded portion and an external terminal ultrasonically bonded to the internal terminal.

[0006] The inventors are considering the following manufacturing method for producing such a semiconductor module. Specifically, when preparing a terminal component, a terminal component is prepared in which internal terminals arranged in a resin molded portion are connected to other members by tie bars. Furthermore, when forming the resin molded portion, the resin molded portion is formed so that the internal terminals are exposed from openings. Then, after cutting the tie bars, the external terminals are ultrasonically bonded so that they are connected to the internal terminals exposed from the openings, thereby forming a semiconductor module.

[0007] However, in the above-described semiconductor module manufacturing method, the tie bars are cut after the resin molded portion is formed, so the internal terminals have tie bar remnants that protrude from the resin molded portion. Furthermore, the inventors' studies have confirmed that ultrasonic bonding of the external terminals to the internal terminals tends to result in significant displacement of the tie bar remnants that protrude from the resin molded portion. Therefore, when manufacturing a semiconductor module using the above-described manufacturing method, there is a possibility that the resin molded portion located around the tie bar remnants protruding from the resin molded portion may be damaged.

[0008] In view of the above, an object of the present invention is to provide a semiconductor module that can prevent damage to a resin molded portion and a method for manufacturing the same. [Means for solving the problem]

[0009] Claim 1 for achieving the above object is a semiconductor module comprising: a semiconductor chip (10); a resin molded portion (19) for resin-sealing the semiconductor chip; and a connection terminal (15) electrically connected to the semiconductor chip and having a portion protruding from the resin molded portion, the connection terminal being plate-shaped, extending in one direction in the surface direction and sealed within the resin molded portion, the connection terminal having an internal terminal (15a) exposed from an opening (193) formed in the resin molded portion, an external terminal (15b) connected to the internal terminal at the opening and protruding from the resin molded portion, and a tie bar remainder (15c) connected to the internal terminal, extending in a direction intersecting the extension direction of the internal terminal and along the surface direction of the internal terminal, and having a protruding portion (150c) protruding from the resin molded portion, the connection terminal having a groove portion (160) formed between the portion exposed from the opening and the protruding portion, the resin molded portion fitting into the groove portion, and the open end of the groove on the protruding portion side being covered by the resin molded portion.

[0010] According to this, a groove is formed in the connection terminal between the protruding portion and the portion exposed from the opening. This allows stress to be dispersed when ultrasonically joining the external terminal to the internal terminal at the opening, thereby reducing the maximum stress generated at the boundary between the protruding portion and the resin molded portion, thereby preventing damage to the resin molded portion.

[0011] Claim 8 is a manufacturing method for the semiconductor module described in claim 1, which includes the steps of preparing a terminal component (200) in which an internal terminal is integrated with a tie bar (210), forming grooves in the internal terminals and the tie bar in the portions to be sealed with the resin molded portion, electrically connecting the internal terminals of the terminal component to a semiconductor chip to form a component (300), preparing a mold (400) in which a cavity (400a) is formed inside by fitting a first mold (410) and a second mold (420) together, placing the component in the cavity, forming a resin molded portion by pouring molten resin into the mold and solidifying it, cutting the tie bar to form a tie bar remainder that is connected to the internal terminal and has a protrusion protruding from the resin molded portion, and ultrasonically joining an external terminal to the internal terminal.

[0012] According to this, a groove is formed between the protruding portion and the portion exposed from the opening. Therefore, when ultrasonically bonding the external terminal to the internal terminal at the opening, stress can be dispersed and the maximum stress generated at the boundary between the protruding portion and the resin molded portion can be reduced. Therefore, a semiconductor module can be manufactured that suppresses damage to the resin molded portion.

[0013] The reference symbols in parentheses attached to each component indicate an example of the correspondence between the component and the specific components described in the embodiments described below. [Brief explanation of the drawings]

[0014] [Figure 1] 1 is a circuit diagram of a three-phase inverter circuit configured using semiconductor modules according to a first embodiment. [Figure 2] FIG. 2 is a diagram showing the internal structure of a semiconductor module. [Figure 3] FIG. 2 is a plan view of the semiconductor module as viewed from one surface side of the resin mold portion. [Figure 4] 10 is a plan view of the semiconductor module before the external terminals are joined, viewed from the other surface side of the resin molded portion. FIG. [Figure 5]10 is a plan view of the semiconductor module after the external terminals are joined, viewed from the other surface side of the resin molded portion. FIG. [Figure 6] FIG. 6 is a cross-sectional view taken along line VI-VI in FIG. [Figure 7] FIG. 7 is a cross-sectional view taken along line VII-VII in FIG. 5. [Figure 8] FIG. 2 is a side view of the semiconductor module. [Figure 9] FIG. 9 is a cross-sectional view taken along line IX-IX in FIG. [Figure 10] FIG. [Figure 11] FIG. [Figure 12] 10A and 10B are diagrams for explaining stresses that occur when ultrasonically joining an external terminal to an internal terminal. [Figure 13A] FIG. 10 is a cross-sectional view showing a groove formed to coincide with the outer boundary. [Figure 13B] FIG. 10 is a cross-sectional view showing a groove formed to coincide with the inner boundary portion. [Figure 14] FIG. 10 is a diagram showing the relationship between groove position and maximum stress. [Figure 15] 10A and 10B are diagrams for explaining stresses that occur when ultrasonically joining an external terminal to an internal terminal when a groove is formed so as to coincide with an outer boundary portion. [Figure 16] FIG. 10 is a diagram showing the relationship between groove depth and maximum stress. [Figure 17] FIG. 10 is a diagram showing the relationship between groove depth and maximum stress. [Figure 18] FIG. 10 is a diagram showing the relationship between groove depth and maximum stress. [Figure 19] FIG. 10 is a diagram showing the relationship between groove depth and maximum stress. [Figure 20] FIG. 10 is a diagram showing the relationship between the length of the protrusion and the maximum stress. [Figure 21] 1A to 1C are plan views showing a manufacturing process of a semiconductor module. [Figure 22] FIG. 2 is a cross-sectional view of the components when they are placed in a mold. [Figure 23] FIG. 2 is a cross-sectional view of the components when they are placed in a mold. [Figure 24] 10A and 10B are plan views showing manufacturing steps after the resin molded portion is formed. DETAILED DESCRIPTION OF THE INVENTION

[0015] DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings. In the following embodiments, identical or equivalent parts will be denoted by the same reference numerals.

[0016] (First embodiment) A first embodiment will be described with reference to the drawings. In this embodiment, a semiconductor module that constitutes a three-phase inverter circuit that drives a three-phase AC motor will be described.

[0017] First, a three-phase inverter circuit will be described with reference to Fig. 1. The three-phase inverter circuit 1 drives a load 3, which is a three-phase AC motor, using a DC power supply 2. A smoothing capacitor 4 is connected in parallel to the three-phase inverter circuit 1 of this embodiment, which reduces ripples during switching and suppresses the effects of noise, enabling the generation of a constant power supply voltage.

[0018] The three-phase inverter circuit 1 is configured such that upper and lower arms 51 to 56 connected in series are connected in parallel for three phases. The three-phase inverter circuit 1 applies intermediate potentials between the upper arms 51, 53, and 55 and the lower arms 52, 54, and 56 to the U-phase, V-phase, and W-phase of a three-phase AC motor serving as the load 3, in that order.

[0019] Specifically, the upper and lower arms 51 to 56 include semiconductor switching elements 51a to 56a such as IGBTs or MOSFETs, and rectifying elements 51b to 56b for the purpose of reflux, such as FWDs. The three-phase inverter circuit 1 supplies three-phase AC currents with different periods to the load 3 by controlling the on / off of the semiconductor switching elements 51a to 56a of the upper and lower arms 51 to 56 of each phase. IGBT stands for Insulated Gate Bipolar Transistor. MOSFET stands for Metal Oxide Semiconductor Field Effect Transistor. FWD stands for Free Wheeling Diode.

[0020] In this embodiment, semiconductor chips on which semiconductor switching elements 51a to 56a and rectifying elements 51b to 56b that constitute the three-phase inverter circuit 1 are formed are modularized and integrated. In other words, the three-phase inverter circuit 1 is configured using a semiconductor module with a 6-in-1 structure in which six arms are integrated.

[0021] 2 to 8, the detailed structure of the semiconductor module 6 of this embodiment will be described below. The semiconductor module 6 of this embodiment includes a semiconductor chip 10, first and second lead frames 11 and 12, an output terminal 13, a control terminal 14, first and second connection terminals 15 and 16, and first and second heat sinks 17 and 18. The semiconductor module 6 also includes a resin molded portion 19 that integrally seals these components.

[0022] The resin molded portion 19 has a generally rectangular parallelepiped shape with a substantially rectangular planar shape, and includes one surface 19a and another surface 19b, and first to fourth side surfaces 19c to 19f connecting the first surface 19a and the other surface 19b. For example, the resin molded portion 19 shown in FIG. 2 has two opposing surfaces extending in the left-right direction of the drawing as the first side surface 19c and the third side surface 19e, and two opposing surfaces extending in the up-down direction of the drawing as the second side surface 19d and the fourth side surface 19f. In this embodiment, the third side surface 19e has a protrusion 191 protruding in a direction normal to the third side surface 19e. The protrusion 191 is located in a portion where the first and second connection terminals 15 and 16 are disposed, as will be described in detail later. In this embodiment, if the portion that seals the first and second lead frames 11, 12 etc. is defined as the main portion 192, the protruding portion 191 is thinner than the main portion 192.

[0023] Six semiconductor chips 10 are provided corresponding to the upper and lower arms 51 to 56. In the following description, the semiconductor chips 10 constituting the upper and lower arms 51 to 56 will be referred to as semiconductor chips 101 to 106, respectively.

[0024] 2, the six semiconductor chips 10 are arranged in three rows. Specifically, the semiconductor chips 101, 103, and 105 constituting the upper arms 51, 53, and 55 are arranged in the order of 101, 103, and 105 along one direction parallel to one surface 19a of the resin molded portion 19. The semiconductor chips 102, 104, and 106 are arranged in the order of 102, 104, and 106 along the arrangement of the semiconductor chips 101, 103, and 105.

[0025] The first and second lead frames 11 and 12 are made of a conductive material such as copper or iron and form a substantially rectangular mounting portion. In plan view, the first lead frame 11 is disposed so as to be located on the first side surface 19c side, and the second lead frame 12 is disposed so as to be located on the third side surface 19e side.

[0026] The semiconductor chips 101, 103, and 105 of the upper arms 51, 53, and 55 are mounted on the front surface side of the first lead frame 11, and the semiconductor chips 102, 104, and 106 of the lower arms 52, 54, and 56 are mounted on the back surface side of the second lead frame 12. Note that the front surface side of the first lead frame 11 refers to the surface on the side of one surface 19a of the resin molded portion 19. The back surface side of the second lead frame 12 refers to the surface on the side of the other surface 19b of the resin molded portion 19.

[0027] Furthermore, the semiconductor chips 101, 103, and 105 are connected to the output terminal 13 via the first lead frame 11. The semiconductor chips 102, 104, and 106 are connected to the output terminal 13 via the second lead frame 12, a wiring layer (not shown), and the first lead frame 11.

[0028] The semiconductor module 6 has three output terminals 13. The three output terminals 13 are connected to the U phase, V phase, and W phase of the load 3, respectively. In this embodiment, the output terminals 13 are made of a plate-shaped conductive member and protrude from the first side surface 19c of the resin molded portion 19.

[0029] Each of the semiconductor chips 101 to 106 is connected to a control terminal 14. The control terminal 14 is a terminal connected to a gate electrode or the like formed on each of the semiconductor chips 101 to 106. The control terminal 14 is made of a rod-shaped conductive member, one end of which is connected to the semiconductor chips 101 to 106, and the other end of which protrudes from the first side surface 19c or the third side surface 19e of the resin molded portion 19. The portion of the control terminal 14 exposed from the resin molded portion 19 is bent so as to protrude toward the one surface 19a of the resin molded portion 19.

[0030] Specifically, a control terminal 14 is provided for each of the semiconductor chips 101 to 106. The control terminals 14 connected to the semiconductor chips 101, 103, and 105 of the upper arms 51, 53, and 55 protrude from the first side surface 19c of the resin molded portion 19, which is the same as the output terminals 13. The control terminals 14 connected to the semiconductor chips 102, 104, and 106 of the lower arms 52, 54, and 56 protrude from the third side surface 19e of the resin molded portion 19, which is the side opposite to the output terminals 13.

[0031] The first and second connection terminals 15 and 16 connect the semiconductor chip 10 to the smoothing capacitor 4. The first and second connection terminals 15 and 16 are plate-shaped and, as shown in FIGS. 6 to 8, are stacked on top of each other and protrude from the third side surface 19e of the resin molded portion 19. That is, the first and second connection terminals 15 and 16 protrude from the same third side surface 19e as the control terminals 14 connected to the semiconductor chips 102, 104, and 106 of the lower arms 52, 54, and 56. Here, in the protruding portion 191, the surface on the side of the one surface 19a of the resin molded portion 19 is referred to as the first surface 191a, the surface on the side of the other surface 19b is referred to as the other surface 191b, the surface opposite the main portion 192 is referred to as the tip surface 191c, and the surfaces connected to the tip surface 191c are referred to as the first and second side surfaces 191d and 191e. The tip surface 191c can also be said to be the surface located on the tip side in the protruding direction of the convex portion 191. In this embodiment, the first and second connection terminals 15, 16 are stacked in the portion arranged on the convex portion 191 such that the first connection terminal 15 is located on the one surface 191a side and the second connection terminal 16 is located on the other surface 191b side.

[0032] The first and second connection terminals 15, 16 are stacked at a predetermined distance, and are electrically insulated by a resin molded portion 19 disposed between them. The first and second connection terminals 15, 16 are also disposed at a predetermined distance from the control terminal 14 connected to the semiconductor chips 102, 104, 106 of the lower arms 52, 54, 56. For example, the distance between the control terminal 14 and the first and second connection terminals 15, 16 is designed to be longer than the distance at which insulation between the control terminal 14 and the first and second connection terminals 15, 16 is ensured when a predetermined impulse voltage is applied.

[0033] The first connection terminal 15 is a terminal that connects the semiconductor chips 101, 103, and 105 to the positive electrode of the DC power supply 2 via the smoothing capacitor 4. The second connection terminal 16 is a terminal that connects the semiconductor chips 102, 104, and 106 to the negative electrode of the DC power supply 2 via the smoothing capacitor 4.

[0034] The first connection terminal 15 of this embodiment has an internal terminal 15a sealed in the resin molded portion 19 and an external terminal 15b arranged outside the resin molded portion 19. The internal terminal 15a is made of a plate-shaped conductive material and is connected to the semiconductor chips 101, 103, and 105 of the upper arms 51, 53, and 55 via the first lead frame 11.

[0035] The semiconductor module 6 of this embodiment includes two first connection terminals 15. The two first connection terminals 15 are arranged to sandwich the semiconductor chips 103 and 104 arranged in the center row of the six semiconductor chips 10 arranged in three rows. Specifically, the internal terminal 15a of one of the first connection terminals 15 is arranged to pass between the semiconductor chips 101 and 103 and between the semiconductor chips 102 and 104. The internal terminal 15a of the other first connection terminal 15 is arranged to pass between the semiconductor chips 103 and 105 and between the semiconductor chips 104 and 106.

[0036] One longitudinal end of the internal terminal 15a is connected to the semiconductor chips 101, 103, and 105 via the first lead frame 11, and the other end is covered by the protrusion 191. The internal terminal 15a is exposed from an opening 193 formed in the other surface 191b of the protrusion 191.

[0037] The external terminal 15b is made of a plate-like conductive material and is bent so as to form a generally crank-like shape when viewed from the side. One of the two ends of the external terminal 15b sandwiching the bent portion is connected to the internal terminal 15a by ultrasonic bonding. The other end of the external terminal 15b sandwiching the bent portion protrudes along the other surface 191b of the protrusion 191 while being spaced from the other surface 191b of the protrusion 191. Although not particularly limited, the distance between the other end of the external terminal 15b and the protrusion 191 is set to, for example, 0.1 mm or more and 2 mm or less to prevent foreign matter from getting caught. The protruding portion of the external terminal 15b is connected to the smoothing capacitor 4.

[0038] Furthermore, the first connection terminal 15 of this embodiment has tie bar remnants 15c protruding from the first and second side surfaces 191d, 191e of the protrusion 191. As described below, these tie bar remnants 15c are what remain when a tie bar 210 connecting the internal terminal 15a and the control terminal 14 is cut. In this embodiment, two tie bar remnants 15c are provided, one on either side of the internal terminal 15a, and each is connected to the internal terminal 15a. The tie bar remnants 15c extend in a direction intersecting the extension direction of the internal terminal 15a and along the surface direction of the internal terminal 15a, protruding from the first and second side surfaces 191d, 191e. Furthermore, as described below, the internal terminal 15a and the control terminal 14 are connected by the tie bar 210 before the semiconductor module 6 is assembled. Therefore, the control terminal 14, the internal terminal 15a, and the tie bar remnants 15c are located on the same plane.

[0039] As described above, the external terminal 15b is joined to the internal terminal 15a by ultrasonic bonding. Here, as shown in Fig. 9, the direction along the extension direction of the tie bar remaining portion 15c is defined as a first direction, and the direction intersecting the first direction and along the surface of the internal terminal 15a is defined as a second direction. In Fig. 9, the left-right direction of the paper surface is defined as the first direction, and the direction perpendicular to the paper surface is defined as the second direction.

[0040] In this embodiment, ultrasonic bonding is performed by ultrasonically vibrating the external terminal 15b along the first direction. At this time, the internal terminal 15a vibrates due to the vibrations generated during ultrasonic bonding. The tie-bar remainder 15c connected to the internal terminal 15a also vibrates. In this case, if the portion of the tie-bar remainder 15c that protrudes from the resin molded portion 19 is referred to as the protruding portion 150c, the protruding portion 150c is not sealed in the resin molded portion 19, and is therefore more susceptible to vibration. Therefore, when the external terminal 15b is bonded to the internal terminal 15a by ultrasonic bonding, the greatest stress occurs at the boundary between the first and second side surfaces 191d and 191e of the protruding portion 191 and the protruding portion 150c.

[0041] 9, a groove 160 is formed in the first connection terminal 15 between the portion exposed from the opening 193 and the protruding portion 150c of the tie bar remaining portion 15c that is exposed from the resin molded portion 19. In this embodiment, the groove 160 is formed in the portion of the tie bar remaining portion 15c that is sealed with the resin molded portion 19. In this embodiment, the groove 160 is formed on both the one surface 150a and the other surface 150b, where the surface of the first connection terminal 15 that faces the second connection terminal 16 is defined as one surface 150a and the surface opposite to the one surface 150a is defined as the other surface 150b. The resin molded portion 19 is formed so as to fit into the groove 160.

[0042] In this embodiment, the internal terminal 15a of the first connection terminal 15 is a portion that faces the second connection terminal 16 across the resin mold portion 19 in the stacking direction of the first connection terminal 15 and the second connection terminal 16. The tie bar remaining portion 15c is a portion that is connected to the internal terminal 15a and does not overlap with the second connection terminal 16 in the stacking direction. In addition, in the semiconductor module 6 of this embodiment, current flows along the extension direction of the first connection terminal 15 and the second connection terminal 16. Therefore, the tie bar remaining portion 15c is a portion of the first connection terminal 15 that is different from the portion through which current mainly flows, and the groove portion 160 can be said to be formed in a portion of the first connection terminal 15 that is different from the portion through which current mainly flows.

[0043] 10, the groove portion 160 of this embodiment is configured by forming a plurality of recesses 161. Specifically, the groove portion 160 is configured by forming the plurality of recesses 161 in a stripe pattern with the second direction as the longitudinal direction. In other words, the groove portion 160 is configured by the plurality of recesses 161 extending in a direction intersecting the direction of the ultrasonic vibrations.

[0044] Furthermore, although details of the internal terminal 15a and the tie bar remaining portion 15c of this embodiment are omitted in FIG. 9 and the like, a roughened portion 170 is formed in a portion different from the groove portion 160, that is, a portion sealed in the resin molded portion 19. Specifically, as shown in FIG. 11 , the roughened portion 170 is formed with a plurality of recesses 171 scattered therein. However, the groove portion 160 and the roughened portion 170 are formed such that the groove portion 160 (i.e., the recesses 161) is deeper than the roughened portion 170 (i.e., the recesses 171). In other words, the groove portion 160 and the roughened portion 170 are formed such that the groove portion 160 has a greater surface roughness than the roughened portion 170. Although not particularly limited, the groove portion 160 may have a depth of approximately 8 μm and a surface area ratio of approximately 110% based on the surface area when the groove portion 160 is not formed. Roughened portion 170 has a depth of, for example, about 1 μm, and a surface area ratio of about 104% based on the surface area when roughened portion 170 is not formed.

[0045] In this embodiment, the grooves 160 and the roughened portions 170 are formed by irradiating them with laser light from a common laser device. However, the grooves 160 and the roughened portions 170 are formed with greater energy when forming the grooves 160 than when forming the roughened portions 170. The roughened portions 170 are also formed on the second connection terminals 16, which will be described later.

[0046] Furthermore, because the first connection terminal 15 of this embodiment has the groove 160, stress concentration can be dispersed when the external terminal 15b is ultrasonically bonded to the internal terminal 15a. For example, as shown in FIG. 12 , suppose that ultrasonic bonding of the external terminal 15b to the internal terminal 15a displaces the protruding portion 150c of the tie bar remaining portion 15c toward the other surface 191b of the convex portion 191. In this case, stress concentration in the resin molded portion 19 is confirmed to be the boundary between the protruding portion 150c and the first side surface 191d and the portion that enters the groove 160. Note that if the groove 160 is not formed, there is no place to disperse stress, and therefore stress in the resin molded portion 19 is concentrated at the boundary between the protruding portion 150c and the first side surface 191d. Therefore, in this embodiment, the groove 160 is formed in the portion sealed by the resin molded portion 19, thereby dispersing stress and preventing damage to the resin molded portion 19.

[0047] Here, as shown in FIG. 13A, when the end of groove 160 on the protruding portion 150c side coincides with first side surface 191d, groove 160 is defined as being formed on the outer boundary. Groove 160 being formed on the outer boundary can also be said to be a configuration in which the opening end of groove 160 on the protruding portion 150c side is exposed from resin molded portion 19. Also, as shown in FIG. 13B, when the end of groove 160 on the internal terminal 15a side overlaps with second connection terminal 16 in the stacking direction of internal terminal 15a and second connection terminal 16, groove 160 is defined as being formed on the inner boundary. While FIGS. 13A and 13B show the portion of resin molded portion 19 on the first side surface 191d side, the same applies to the portion on the second side surface 191e side.

[0048] In this case, as shown in Fig. 14, if the maximum stress generated when groove portion 160 is not formed is taken as the reference stress (i.e., the maximum stress in Fig. 14 is 1), it is confirmed that when groove portion 160 is formed at the outer boundary, the maximum stress becomes higher than the reference stress. It is also confirmed that when groove portion 160 is formed slightly shifted toward the inner boundary, the maximum stress drops sharply, and when groove portion 160 is formed further shifted toward the inner boundary, the maximum stress gradually increases. Note that Fig. 14 shows the simulation results when the length of groove portion 160 in the first direction is the width, and the width of groove portion 160 is 0.3 mm and the depth is 0.1 mm.

[0049] The reason for the above-described maximum stress is explained below. First, it has been confirmed that when the groove 160 is formed at the outer boundary, it becomes difficult to disperse the stress concentration points, as shown in FIG. 15 . Furthermore, stress due to deformation of the portion of the resin molded portion 19 that has entered the groove 160 is also applied to the boundary between the protrusion 150c and the first side surface 191d. For this reason, when the groove 160 is formed at the outer boundary, the maximum stress may become larger than the reference stress. Note that, similar to FIG. 12 , FIG. 15 illustrates the results of a simulation in which the protrusion 150c is displaced toward the other surface 191b of the convex portion 191 as a result of ultrasonically bonding the external terminal 15b to the internal terminal 15a.

[0050] Furthermore, placing the groove 160 closer to the inner boundary means placing it closer to the opening 193, that is, closer to the joint with the external terminal 15b. Therefore, placing the groove 160 too close to the inner boundary makes it difficult to reduce the impact of vibration when connecting the internal terminal 15a to the external terminal 15b, and the maximum stress gradually increases. Therefore, the groove 160 is preferably formed inside the outer boundary in the portion sealed with the resin molded portion 19, and is further preferably formed in the portion of the tie bar remaining portion 15c opposite the internal terminal 15a. Forming the groove 160 inside the outer boundary in the portion sealed with the resin molded portion 19 means that the open end of the groove 160 on the protrusion 150c side is also sealed with the resin molded portion 19.

[0051] Furthermore, as shown in FIG. 16 , it has been confirmed that the deeper the groove 160, the more the maximum stress can be reduced. Note that FIG. 16 shows simulation results when the width of the groove 160 is 0.5 mm and the thickness of the tie bar remainder 15c at a portion different from the portion where the groove 160 is formed is 0.5 mm. In this case, FIG. 16 also shows results when the depth of the groove 160 is 0.15 mm. However, in this embodiment, the groove 160 is formed on the one surface 150a side and the other surface 150b side of the tie bar remainder 15c. Furthermore, the thickness of the portion remaining after the groove 160 is formed is preferably at least half the thickness of the tie bar remainder 15c to prevent the tie bar remainder 15c from breaking. Therefore, when the groove 160 is formed on the one surface 150a side and the other surface 150b side of the tie bar remainder 15c as in this embodiment, the depth of each groove 160 is preferably less than 0.125 mm.

[0052] The groove 160 also functions to suppress vibrations that occur when ultrasonically joining the external terminal 15b to the internal terminal 15a. In this case, the inventors have confirmed that the depth of the groove 160 is preferably at least 1 / 10 of the thickness of the tie-bar remainder 15c. Therefore, the depth of the groove 160 is set to at least 1 / 10 of the thickness of the tie-bar remainder 15c.

[0053] Furthermore, the inventors also conducted extensive research into the width of the groove 160, and obtained the results shown in FIGS. 17 to 19. FIG. 17 shows simulation results obtained when the depth of the groove 160 was set to 0.05 mm and the width of the groove 160 was varied. FIG. 18 shows simulation results obtained when the depth of the groove 160 was set to 0.10 mm and the width of the groove 160 was varied. FIG. 19 shows simulation results obtained when the depth of the groove 160 was set to 0.15 mm and the width of the groove 160 was varied. As shown in FIGS. 17 to 19, it was confirmed that the maximum stress of the groove 160 did not change significantly even when the width was changed. For this reason, it is preferable to adjust the depth of the groove 160 depending on the conditions for ultrasonically bonding the external terminal 15b. However, the width of the groove 160 must be set to 50 μm or more so that the resin molded portion 19 can be positioned sufficiently. The width of the groove 160 is formed by irradiating laser light, and is preferably set to 50 μm or more for ease of manufacture. Therefore, the groove 160 in this embodiment has a width of 50 μm or more.

[0054] Furthermore, as described above, the tie-bar remainder 15c has the protruding portion 150c protruding from the first and second side surfaces 191d, 191e of the convex portion 191. In this case, the maximum stress increases as the length of the protruding portion 150c along the protruding direction (i.e., the length in the first direction) increases, as shown in Fig. 20. For this reason, it is preferable that the length of the protruding portion 150c of the tie-bar remainder 15c is short, for example, 1 mm or less.

[0055] The second connection terminals 16 are made of a plate-like conductive material and are connected to the semiconductor chips 10 on the lower arms 52, 54, and 56 via the second lead frame 12. One longitudinal end of the second connection terminals 16 is connected to the semiconductor chips 102, 104, and 106 via the second lead frame 12, and the other end protrudes from the third side surface 19e of the resin molded portion 19 in the same direction as the protruding direction of the external terminals 15b. Specifically, the second connection terminals 16 are arranged on the protruding portions 191 provided on the third side surface 19e so as to protrude from the tip surface 191c of the protruding portion 191. In this embodiment, the tip surface 191c corresponds to the predetermined surface.

[0056] The semiconductor module 6 has two second connection terminals 16. As described above, the semiconductor module 6 also has two first connection terminals 15. The first and second connection terminals 15, 16 are arranged in a stacked configuration.

[0057] Furthermore, in this embodiment, the creepage distance along the resin molded portion 19 between the second connection terminal 16 and the portion of the tie bar remaining portion 15c that protrudes from the convex portion 191 in plan view is adjusted so that the insulation resistance can be maintained. Although not particularly limited, in this embodiment, the creepage distance is set to 4 mm or more. In other words, the location where the tie bar remaining portion 15c is disposed is adjusted so that the creepage distance along the resin molded portion 19 between the second connection terminal 16 and the tie bar remaining portion 15c is a desired distance in plan view so that the insulation resistance can be maintained.

[0058] The external terminal 15b has a surface with the stacking direction of the internal terminals 15a and the second connection terminal 16 as its normal, which has the same shape as the second connection terminal 16. In this embodiment, the tip portions of the external terminal 15b and the second connection terminal 16 protruding from the convex portion 191 have shapes corresponding to fastening members such as bolts so that they can be connected to the smoothing capacitor 4. Specifically, the tip portions of the external terminal 15b and the second connection terminal 16 protruding from the convex portion 191 have a roughly U-shape separated into two. The U-shaped portions of the external terminal 15b and the second connection terminal 16 have the same or approximately the same shape, and the protruding length of the external terminal 15b and the second connection terminal 16 in the protruding direction of the external terminal 15b and the second connection terminal 16 is the same or approximately the same.

[0059] The first and second heat sinks 17 and 18 correspond to heat sinks, and one surface thereof faces the semiconductor chip 10. The semiconductor chips 101 to 106 are connected to the first and second heat sinks 17 and 18 via the first and second lead frames 11 and 12, and the surfaces of the first and second heat sinks 17 and 18 opposite the first and second lead frames 11 and 12 are exposed from the resin molded portion 19. In this manner, the semiconductor chips 101 to 106 are sandwiched between the first and second heat sinks 17 and 18, and the semiconductor module 6 is sandwiched between cooling devices (not shown) on both sides in the thickness direction, and is used to drive the load 3 while dissipating heat.

[0060] The above is the configuration of the semiconductor module 6 in this embodiment. Although details will be omitted, this semiconductor module 6 is used with the first and second connection terminals 15, 16 connected to the smoothing capacitor 4 and the output terminal 13 connected to the load 3.

[0061] Next, a method for manufacturing the semiconductor module 6 will be described with reference to Figures 21 to 24. Figures 21 and 24 are plan views seen from the first connection terminal 15 side.

[0062] First, the semiconductor chips 101 to 106 are mounted on the first and second lead frames 11 and 12. Then, the output terminals 13 and the second connection terminals 16 are electrically connected to the semiconductor chips 101 to 106. Also, as shown in FIG. 21 , a terminal component 200 is prepared in which the internal terminals 15a of the first connection terminals 15 and the control terminals 14 are integrally connected by tie bars 210. Then, using a common laser device, laser light is irradiated to form grooves 160 in the portions of the tie bars 210 that are to be sealed with the resin molded portion 19, and roughened portions 170 are formed in the portions of the internal terminals 15a and the control terminals 14 that are to be sealed with the resin molded portion 19. At this time, irradiation conditions such as energy are changed to form the grooves 160 and the roughened portions 170 so that the grooves 160 are deeper than the roughened portions 170.

[0063] Thereafter, the internal terminals 15a and the control terminals 14 are electrically connected to the semiconductor chips 101 to 106. Furthermore, the first and second heat sinks 17 and 18 are arranged. In this way, the component 300 is prepared, in which the internal terminals 15a and the second connection terminals 16 are connected to the semiconductor chips 101 to 106.

[0064] 22 and 23, the component 300 is placed in a mold 400 in which a first die 410 and a second die 420 are fitted together to form a cavity 400a. Specifically, as shown in FIG. 22, the component 300 is placed so that the portion of the second connection terminal 16 exposed from the protrusion 191 of the resin molded portion 19 is sandwiched between the first die 410 and the second die 420. Also, as shown in FIG. 23, the component 300 is placed so that the portion of the tie bar 210 and the control terminal 14 exposed from the resin molded portion 19 is sandwiched between the first die 410 and the second die 420. In other words, because the internal terminal 15a is connected to the tie bar 210, the component 300 is placed so that the internal terminal 15a is fixed at a predetermined position within the mold 400. In this embodiment, different portions of the internal terminal 15a and the second connection terminal 16 are sandwiched between the first mold 410 and the second mold 420 in the stacking direction.

[0065] The component 300 shown in Figure 22 corresponds to a cross-sectional view taken along line XXII-XXII in Figure 21. The component 300 shown in Figure 23 corresponds to a cross-sectional view taken along line XXIII-XXIII in Figure 21.

[0066] In this embodiment, the first die 410 is brought into contact with the portions of the internal terminals 15a exposed through the openings 193 via the buffer material 430. In other words, the buffer material 430 is disposed between the first die 410 and the portions of the internal terminals 15a exposed through the openings 193. This makes it possible to prevent damage to the portions of the internal terminals 15a exposed through the openings 193. The buffer material 430 is made of a material softer than the mold 400, such as fluororesin, fluororubber, or silicone rubber.

[0067] Next, although not specifically shown, molten resin is poured into a mold 400 and solidified to form the resin molded portion 19 with the opening 193. In this case, in this embodiment, the internal terminal 15a and the second connection terminal 16 are each fixed by the mold 400. This prevents variation in the spacing between the internal terminal 15a and the second connection terminal 16, thereby preventing changes in inductance. Furthermore, in this embodiment, the roughened portion 170 is shallower than the groove 160, thereby reducing surface roughness. Therefore, compared to, for example, a case in which the groove 160 is formed over the entire portion of the internal terminal 15a and the second connection terminal 16 that is sealed with the resin molded portion 19, this prevents a decrease in the resin flow of the molten resin and the occurrence of entrapment voids, etc.

[0068] 24, the tie bar 210 and other parts connecting the control terminal 14 and the internal terminal 15a are cut, thereby forming the tie bar remaining parts 15c that are connected to the internal terminal 15a and protrude from the first and second side surfaces 191d, 191e of the protrusion 191.

[0069] Next, although not specifically shown, the external terminal 15b is ultrasonically bonded to the internal terminal 15a. In this case, because the protruding portion 150c protrudes from the resin molded portion 19, stress concentration is likely to occur at the boundary between the protruding portion 150c and the first and second side surfaces 191d, 191e. However, in this embodiment, a groove 160 is formed in the portion of the tie bar remaining portion 15c that is sealed with the resin molded portion 19. This allows stress to be dispersed when ultrasonically bonding the external terminal 15b to the internal terminal 15a, making it easier to reduce stress generated at the boundary between the protruding portion 150c and the first and second side surfaces 191d, 191e. Therefore, damage to the resin molded portion 19 can be prevented when ultrasonically bonding the external terminal 15b to the internal terminal 15a.

[0070] Thereafter, although not particularly shown, the control terminal 14 is bent, thereby completing the above-described semiconductor module 6.

[0071] According to the present embodiment described above, the first connection terminal 15 has a groove 160 formed between the protruding portion 150c and the portion exposed through the opening 193. Therefore, when ultrasonically bonding the external terminal 15b to the internal terminal 15a through the opening 193, stress can be dispersed, thereby reducing the maximum stress generated at the boundary between the protruding portion 150 and the first and second side surfaces 191d and 191e. This reduces damage to the resin molded portion 19. Increasing the distance between the protruding portion 150c and the portion exposed through the opening 193 of the first connection terminal 15 can also reduce the maximum stress generated at the boundary between the protruding portion 150 and the first and second side surfaces 191d and 191e. However, increasing the distance between the protruding portion 150c and the portion exposed through the opening 193 of the first connection terminal 15 increases the size of the semiconductor module 6 in the planar direction. Therefore, by forming the groove 160 as in this embodiment, it is possible to prevent the semiconductor module 6 from becoming large in size and also to prevent the resin molded portion 19 from being damaged.

[0072] (1) In this embodiment, the groove 160 is formed in the tie bar remaining portion 15c. That is, the groove 160 is formed in a portion of the first connection terminal 15 that is different from the portion through which current mainly flows. This prevents the current performance from deteriorating and also prevents damage to the resin molded portion 19.

[0073] (2) In this embodiment, roughened portion 170 is formed in a portion of first connection terminal 15 and second connection terminal 16 that is sealed with resin molded portion 19 and that differs from the portion where groove portion 160 is formed. This allows roughened portion 170 to improve adhesion to resin molded portion 19. Furthermore, roughened portion 170 is shallower than groove portion 160. This prevents a decrease in resin flow when molten resin is poured into mold 400 to form resin molded portion 19, thereby preventing the occurrence of entrainment voids.

[0074] (3) In this embodiment, the groove 160 is configured by forming a plurality of recesses 161 along the second direction. That is, the groove 160 is configured by a plurality of recesses 161 extending in a direction intersecting the vibration direction when ultrasonically bonding the external terminals 15b. Therefore, vibrations during ultrasonic bonding can be effectively suppressed.

[0075] (4) In this embodiment, the width of the groove 160 is set to 50 μm or more. This allows the resin molded portion 19 to be sufficiently embedded in the groove 160, and also facilitates processing when forming the groove 160 by irradiating it with laser light.

[0076] (5) In this embodiment, the depth of the groove 160 is at least 1 / 10 of the thickness of the portion different from the portion where the groove 160 is formed. This makes it easier to suppress vibrations that occur when ultrasonically joining the external terminal 15b to the internal terminal 15a. Furthermore, the thickness of the portion of the tie-bar remainder 15c where the groove 160 is formed is at least 1 / 2 of the thickness of the portion different from the portion where the groove 160 is formed. This makes it possible to prevent the tie-bar remainder 15c from breaking.

[0077] (6) In this embodiment, the first connection terminal 15 and the second connection terminal 16 are arranged in a stacked manner, which reduces the inductance between the first connection terminal 15 and the second connection terminal 16.

[0078] (Other embodiments) Although the present disclosure has been described with reference to the embodiments, it is understood that the present disclosure is not limited to the embodiments or structures. The present disclosure also encompasses various modifications and modifications within the scope of equivalents. In addition, various combinations and forms, as well as other combinations and forms including only one element, more than one element, or less than one element, are also within the scope and spirit of the present disclosure.

[0079] For example, in the first embodiment, an example in which the first connection terminal 15 and the second connection terminal 16 are stacked has been described, but the first connection terminal 15 and the second connection terminal 16 do not have to be stacked. Also, in the first embodiment, an example in which the first connection terminal 15 and the second connection terminal 16 are provided has been described, but the second connection terminal 16 does not have to be provided.

[0080] The semiconductor module 6 of the first embodiment may be applied to construct a circuit other than a three-phase inverter circuit. The number of semiconductor chips 10 sealed in the resin mold portion 19 may also be changed as appropriate.

[0081] In the first embodiment, the manner in which the semiconductor chips 101 to 106 are connected to the first and second connection terminals 15, 16 can be changed as appropriate.

[0082] In the first embodiment, the roughened portion 170 does not necessarily have to be formed.

[0083] In the first embodiment, the grooves 160 may be formed in the inner terminals 15a instead of in the tie bar remaining portions 15c.

[0084] The groove 160 may be formed in one of the one surface 150a and the other surface 150b of the tie bar remaining portion 15c, rather than being formed in both the one surface 150a and the other surface 150b.

[0085] Furthermore, the recess 161 constituting the groove portion 160 may be formed along a direction different from the second direction, as long as it is formed in a direction intersecting the direction in which the external terminal 15b is ultrasonically bonded to the internal terminal 15a.

[0086] The width of groove 50 may be less than 50 μm. Furthermore, groove 160 may have a depth less than 1 / 10 of the thickness of tie bar remnant 15c, or the depth may be adjusted so that the thickness of tie bar remnant 15c at the portion where groove 160 is formed is less than 1 / 2 of the thickness of tie bar remnant 15c.

[0087] Furthermore, in the first embodiment, the resin molded portion 19 does not necessarily have to be provided with the protrusion 191. For example, the semiconductor module 6 may be configured so that the second connection terminal 16 protrudes from the third side surface 19e of the resin molded portion 19 and the internal terminal 15a is exposed from the other surface 19b of the resin molded portion 19.

[0088] In the first embodiment, the roughened portion 170 does not necessarily have to be formed. Furthermore, when forming the roughened portion 170, the roughened portion 170 may be formed using a laser device different from the laser device that forms the groove portion 160, or the roughened portion 170 may be formed by another method such as blasting.

[0089] (Features of the present invention) [Claim 1] A semiconductor module, A semiconductor chip (10); a resin mold portion (19) for resin-sealing the semiconductor chip; a connection terminal (15) electrically connected to the semiconductor chip and having a portion protruding from the resin mold portion, The connection terminal has a plate shape, an internal terminal (15a) extending in one direction in the surface direction, and sealed in the resin molded portion, and is exposed from an opening (193) formed in the resin molded portion, an external terminal (15b) connected to the internal terminal at the opening and protruding from the resin molded portion, and a tie bar remainder (15c) connected to the internal terminal, extending in a direction intersecting the extension direction of the internal terminal and along the surface direction of the internal terminal, and having a protruding portion (150c) protruding from the resin molded portion, The connection terminal has a groove (160) formed between the portion exposed from the opening and the protruding portion, the resin molded portion is inserted into the groove portion, The opening end of the groove on the protruding portion side is also covered with the resin mold portion. [Claim 2] 2. The semiconductor module according to claim 1, wherein the groove is formed in the remaining portion of the tie bar. [Claim 3] The connection terminal has a roughened portion (170) formed in a portion sealed in the resin mold portion, different from a portion where the groove portion is formed, 3. The semiconductor module according to claim 1, wherein the groove portion has a surface roughness greater than that of the roughened portion. [Claim 4] The groove has a plurality of recesses (161), 4. The semiconductor module according to claim 1, wherein the plurality of recesses extend in a direction intersecting with the direction in which the tie bar remainders extend. [Claim 5] 5. The semiconductor module according to claim 1, wherein the groove has a width of 50 μm or more along the direction in which the tie bar remainder extends. [Claim 6] The depth of the groove is 1 / 10 or more of the thickness of a portion different from the portion where the groove is formed, A semiconductor module as described in any one of claims 1 to 5, wherein the thickness of the connection terminal at the portion where the groove portion is formed is at least half the thickness of the portion other than the portion where the groove portion is formed. [Claim 7] the connection terminal is a first connection terminal, a second connection terminal (16) that is plate-shaped, electrically connected to the semiconductor chip, and has a portion that protrudes from the resin mold portion; the first connection terminal and the second connection terminal are stacked with a predetermined distance between them, The second connection terminal protrudes from a predetermined surface (191c) of the resin molded portion, The semiconductor module has an internal terminal of the first connection terminal exposed through the opening formed on a surface (191b) of the resin mold portion different from the predetermined surface. [Claim 8] A semiconductor chip (10); a resin mold portion (19) for resin-sealing the semiconductor chip; a connection terminal (15) electrically connected to the semiconductor chip and having a portion protruding from the resin mold portion, The connection terminal has a plate shape, an internal terminal (15a) extending in one direction in the surface direction, and sealed in the resin molded portion, and is exposed from an opening (193) formed in the resin molded portion, an external terminal (15b) connected to the internal terminal at the opening and protruding from the resin molded portion, and a tie bar remainder (15c) connected to the internal terminal, extending in a direction intersecting the extension direction of the internal terminal and along the surface direction of the internal terminal, and having a protruding portion (150c) protruding from the resin molded portion, The connection terminal has a groove (160) formed between the portion exposed from the opening and the protruding portion, the resin molded portion is inserted into the groove portion, a method for manufacturing a semiconductor module, wherein an opening end of the groove portion located on an opposite side to the internal terminal side is also covered with the resin mold portion, preparing a terminal component (200) in which the internal terminal is integrated with a tie bar (210); forming the groove portion in a portion of the internal terminal and the tie bar that is sealed with the resin mold portion; electrically connecting the internal terminals of the terminal component to the semiconductor chip to form a component (300); preparing a mold (400) in which a cavity (400a) is formed by fitting a first mold (410) and a second mold (420) together, and placing the component in the cavity; pouring molten resin into the mold and solidifying it to form the resin molded portion; cutting the tie bar to form a tie bar remainder connected to the internal terminal and having the protruding portion protruding from the resin molded portion; and ultrasonically bonding the external terminals to the internal terminals. [Claim 9] By forming the groove portion, a roughened portion (170) having a surface roughness smaller than that of the groove portion is also formed in a portion of the internal terminal and the tie bar that is sealed by the resin mold portion and that is different from the groove portion, 9. The method for manufacturing a semiconductor module according to claim 8, wherein forming the groove portion and forming the roughened portion are performed by irradiating laser light using the same laser device to form the groove portion and the roughened portion. [Explanation of symbols]

[0090] 10 Semiconductor chips 15 First connection terminal 15a internal terminal 15b External terminal 15c Tie bar remainder 19 Resin molded part 150c protrusion 160 Groove

Claims

1. A semiconductor module, A semiconductor chip (10); a resin mold portion (19) for resin-sealing the semiconductor chip; a connection terminal (15) electrically connected to the semiconductor chip and having a portion protruding from the resin molded portion, The connection terminal has a plate shape, an internal terminal (15a) extending in one direction in the surface direction and sealed in the resin molded portion, and exposed from an opening (193) formed in the resin molded portion, an external terminal (15b) connected to the internal terminal at the opening and protruding from the resin molded portion, and a tie bar remainder (15c) connected to the internal terminal, extending in a direction intersecting the extension direction of the internal terminal and along the surface direction of the internal terminal, and having a protruding portion (150c) protruding from the resin molded portion, The connection terminal has a groove (160) formed between the portion exposed from the opening and the protruding portion, the resin molded portion is inserted into the groove portion, The opening end of the groove on the protruding portion side is also covered with the resin mold portion.

2. The semiconductor module according to claim 1 , wherein the groove is formed in the remaining portion of the tie bar.

3. The connection terminal has a roughened portion (170) formed in a portion sealed in the resin mold portion, different from a portion where the groove portion is formed, The semiconductor module according to claim 1 , wherein the groove portion has a surface roughness greater than that of the roughened portion.

4. The groove has a plurality of recesses (161), The semiconductor module according to claim 1 , wherein the plurality of recesses extend in a direction intersecting with the direction in which the tie bar remains extend.

5. 2. The semiconductor module according to claim 1, wherein the groove has a width of 50 [mu]m or more along the direction in which the tie bar remainder extends.

6. The depth of the groove is 1 / 10 or more of the thickness of a portion different from the portion where the groove is formed, 2. The semiconductor module according to claim 1, wherein the thickness of the connection terminal at the portion where the groove is formed is at least half the thickness of the portion other than the portion where the groove is formed.

7. the connection terminal is a first connection terminal, a second connection terminal (16) that is plate-shaped, electrically connected to the semiconductor chip, and has a portion that protrudes from the resin mold portion; the first connection terminal and the second connection terminal are stacked with a predetermined distance between them, The second connection terminal protrudes from a predetermined surface (191c) of the resin molded portion, 2. The semiconductor module according to claim 1, wherein the internal terminal of the first connection terminal is exposed by the opening formed in a surface (191b) of the resin molded portion different from the predetermined surface.

8. A semiconductor chip (10); a resin mold portion (19) for resin-sealing the semiconductor chip; a connection terminal (15) electrically connected to the semiconductor chip and having a portion protruding from the resin molded portion, The connection terminal has a plate shape, an internal terminal (15a) extending in one direction in the surface direction and sealed in the resin molded portion, and exposed from an opening (193) formed in the resin molded portion, an external terminal (15b) connected to the internal terminal at the opening and protruding from the resin molded portion, and a tie bar remainder (15c) connected to the internal terminal, extending in a direction intersecting the extension direction of the internal terminal and along the surface direction of the internal terminal, and having a protruding portion (150c) protruding from the resin molded portion, The connection terminal has a groove (160) formed between the portion exposed from the opening and the protruding portion, the resin molded portion is inserted into the groove portion, a resin molded portion covering an open end of the groove portion on the protruding portion side, the resin molded portion being also covered with the open end of the groove portion, preparing a terminal component (200) in which the internal terminal is integrated with a tie bar (210); forming the groove portion in a portion of the internal terminal and the tie bar that is sealed with the resin mold portion; electrically connecting the internal terminals of the terminal component to the semiconductor chip to form a component (300); preparing a mold (400) in which a cavity (400a) is formed by fitting a first mold (410) and a second mold (420) together, and placing the component in the cavity; pouring molten resin into the mold and solidifying it to form the resin molded portion; cutting the tie bar to form a tie bar remainder connected to the internal terminal and having the protruding portion protruding from the resin molded portion; and ultrasonically bonding the external terminals to the internal terminals.

9. By forming the groove portion, a roughened portion (170) having a surface roughness smaller than that of the groove portion is also formed in a portion of the internal terminal and the tie bar that is sealed by the resin mold portion and is different from the groove portion, The method for manufacturing a semiconductor module according to claim 8 , wherein forming the groove portion and forming the roughened portion are performed by irradiating the groove portion and the roughened portion with laser light using the same laser device.

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