Microelectronic structures, microelectronic assemblies and electronic devices

Abstract

To provide a microelectronic structure allowing achievable interconnect density between a package substrate and a die, achievable speed of signal transfer, and achievable miniaturization.SOLUTION: A microelectronic structure comprises: a substrate 102; a cavity 120 in a top face of the substrate; and a bridge component 110 in the cavity. The bridge component 110 includes a first face and an opposing second face. The second face of the bridge component 110 is between the first face of the bridge component 110 and the substrate 102. The bridge component 110 includes a first interconnect material in the first face, and a second interconnect material in the second face. The first interconnect material has a different material composition than the second interconnect material.SELECTED DRAWING: Figure 1

Description

[Background technology]

[0001] In conventional microelectronic packages, a die may be solder-attached to an organic package substrate, and such packages may be limited, for example, in the achievable interconnect density between the package substrate and the die, the achievable signal transmission speed, and the achievable miniaturization. [Brief explanation of the drawings]

[0002] BRIEF DESCRIPTION OF THE DRAWINGS

[0013] The embodiments will be readily understood from the following detailed description taken in conjunction with the accompanying drawings, in which:

[0014] For ease of description, like reference numerals refer to like structural elements;

[0015] The embodiments are illustrated in the figures of the accompanying drawings, but are not limited thereto.

[0003] [Figure 1] 1 is a cross-sectional side view of an exemplary microelectronic structure, according to various embodiments.

[0004] [Figure 2] 2 is a cross-sectional side view of an exemplary microelectronic assembly including the microelectronic structure of FIG. 1, according to various embodiments.

[0005] [Figure 3] 3A-3C are cross-sectional side views of various stages in an exemplary process for manufacturing the microelectronic assembly of FIG. 2, according to various embodiments. [Figure 4] 3A-3C are cross-sectional side views of various stages in an exemplary process for manufacturing the microelectronic assembly of FIG. 2, according to various embodiments. [Figure 5] 3A-3C are cross-sectional side views of various stages in an exemplary process for manufacturing the microelectronic assembly of FIG. 2, according to various embodiments. [Figure 6] 3A-3C are cross-sectional side views of various stages in an exemplary process for manufacturing the microelectronic assembly of FIG. 2, according to various embodiments. [Figure 7] 3A-3C are cross-sectional side views of various stages in an exemplary process for manufacturing the microelectronic assembly of FIG. 2, according to various embodiments. [Figure 8] 3A-3C are cross-sectional side views of various stages in an exemplary process for manufacturing the microelectronic assembly of FIG. 2, according to various embodiments. [Figure 9] 3A-3C are cross-sectional side views of various stages in an exemplary process for manufacturing the microelectronic assembly of FIG. 2, according to various embodiments. [Figure 10] 3A-3C are cross-sectional side views of various stages in an exemplary process for manufacturing the microelectronic assembly of FIG. 2, according to various embodiments.

[0006] [Figure 11] 1 is a cross-sectional side view of an exemplary microelectronic structure according to various embodiments. [Figure 12] 1 is a cross-sectional side view of an exemplary microelectronic structure according to various embodiments. [Figure 13] 1 is a cross-sectional side view of an exemplary microelectronic structure according to various embodiments. [Figure 14] 1 is a cross-sectional side view of an exemplary microelectronic structure according to various embodiments. [Figure 15] 1 is a cross-sectional side view of an exemplary microelectronic structure according to various embodiments. [Figure 16] 1 is a cross-sectional side view of an exemplary microelectronic structure according to various embodiments.

[0007] [Figure 17] 15A-15C are cross-sectional side views of various stages in an exemplary process for fabricating the microelectronic structure of FIG. 14, according to various embodiments. [Figure 18] 15A-15C are cross-sectional side views of various stages in an exemplary process for fabricating the microelectronic structure of FIG. 14, according to various embodiments. [Figure 19] 15A-15C are cross-sectional side views of various stages in an exemplary process for fabricating the microelectronic structure of FIG. 14, according to various embodiments. [Figure 20] 15A-15C are cross-sectional side views of various stages in an exemplary process for fabricating the microelectronic structure of FIG. 14, according to various embodiments. [Figure 21] 15A-15C are cross-sectional side views of various stages in an exemplary process for fabricating the microelectronic structure of FIG. 14, according to various embodiments. [Figure 22] 15A-15C are cross-sectional side views of various stages in an exemplary process for fabricating the microelectronic structure of FIG. 14, according to various embodiments. [Figure 23] 15A-15C are cross-sectional side views of various stages in an exemplary process for fabricating the microelectronic structure of FIG. 14, according to various embodiments. [Figure 24] 15A-15C are cross-sectional side views of various stages in an exemplary process for fabricating the microelectronic structure of FIG. 14, according to various embodiments. [Figure 25] 15A-15C are cross-sectional side views of various stages in an exemplary process for fabricating the microelectronic structure of FIG. 14, according to various embodiments.

[0008] [Figure 26] 1 is a cross-sectional side view of an exemplary microelectronic structure, according to various embodiments.

[0009] [Figure 27] 27A-27D are cross-sectional side views of various stages in an exemplary process for fabricating the microelectronic structure of FIG. 26. [Figure 28] 27A-27D are cross-sectional side views of various stages in an exemplary process for fabricating the microelectronic structure of FIG. 26.

[0010] [Figure 29]1 is a cross-sectional side view of an exemplary microelectronic structure, according to various embodiments.

[0011] [Figure 30] 30A-30C are cross-sectional side views of various stages in an exemplary process for fabricating the microelectronic structure of FIG. 29. [Figure 31] 30A-30C are cross-sectional side views of various stages in an exemplary process for fabricating the microelectronic structure of FIG. 29.

[0012] [Figure 32] 1 is a cross-sectional side view of an exemplary microelectronic structure, according to various embodiments.

[0013] [Figure 33] 33A-33C are cross-sectional side views of various stages in an exemplary process for manufacturing a microelectronic assembly including the microelectronic structure of FIG. 32. [Figure 34] 33A-33C are cross-sectional side views of various stages in an exemplary process for manufacturing a microelectronic assembly including the microelectronic structure of FIG. 32.

[0014] [Figure 35] 1 is a cross-sectional side view of an exemplary microelectronic structure, according to various embodiments.

[0015] [Figure 36] FIG. 1 is an exploded side cross-sectional view of an exemplary microelectronic assembly, according to various embodiments. [Figure 37] FIG. 1 is an exploded side cross-sectional view of an exemplary microelectronic assembly, according to various embodiments. [Figure 38] FIG. 1 is an exploded side cross-sectional view of an exemplary microelectronic assembly, according to various embodiments. [Figure 39] FIG. 1 is an exploded side cross-sectional view of an exemplary microelectronic assembly, according to various embodiments. [Figure 40] FIG. 1 is an exploded side cross-sectional view of an exemplary microelectronic assembly, according to various embodiments. [Figure 41] FIG. 1 is an exploded side cross-sectional view of an exemplary microelectronic assembly, according to various embodiments. [Figure 42] FIG. 1 is an exploded side cross-sectional view of an exemplary microelectronic assembly, according to various embodiments. [Figure 43] FIG. 1 is an exploded side cross-sectional view of an exemplary microelectronic assembly, according to various embodiments. [Figure 44] FIG. 1 is an exploded side cross-sectional view of an exemplary microelectronic assembly, according to various embodiments. [Figure 45] FIG. 1 is an exploded side cross-sectional view of an exemplary microelectronic assembly, according to various embodiments. [Figure 46] FIG. 1 is an exploded side cross-sectional view of an exemplary microelectronic assembly, according to various embodiments. [Figure 47] FIG. 1 is an exploded side cross-sectional view of an exemplary microelectronic assembly, according to various embodiments. [Figure 48] FIG. 1 is an exploded side cross-sectional view of an exemplary microelectronic assembly, according to various embodiments. [Figure 49] FIG. 1 is an exploded side cross-sectional view of an exemplary microelectronic assembly, according to various embodiments. [Figure 50] FIG. 1 is an exploded side cross-sectional view of an exemplary microelectronic assembly, according to various embodiments. [Figure 51] FIG. 1 is an exploded side cross-sectional view of an exemplary microelectronic assembly, according to various embodiments. [Figure 52] FIG. 1 is an exploded side cross-sectional view of an exemplary microelectronic assembly, according to various embodiments.

[0016] [Figure 53]53A-53C are cross-sectional side views of various stages in an exemplary process for fabricating the microelectronic structure of FIG. 52. [Figure 54] 53A-53C are cross-sectional side views of various stages in an exemplary process for fabricating the microelectronic structure of FIG. 52.

[0017] [Figure 55] FIG. 1 is an exploded side cross-sectional view of an exemplary microelectronic assembly, according to various embodiments. [Figure 56] FIG. 1 is an exploded side cross-sectional view of an exemplary microelectronic assembly, according to various embodiments. [Figure 57] FIG. 1 is an exploded side cross-sectional view of an exemplary microelectronic assembly, according to various embodiments.

[0018] [Figure 58] FIG. 1 is a top view of a wafer and die that may be included in a microelectronic structure or microelectronic assembly according to any of the embodiments disclosed herein.

[0019] [Figure 59] 1 is a cross-sectional side view of an integrated circuit (IC) device that may be included in a microelectronic structure or microelectronic assembly according to any of the embodiments disclosed herein.

[0020] [Figure 60] 1 is a cross-sectional side view of an IC device assembly that may include a microelectronic structure or microelectronic assembly according to any of the embodiments disclosed herein.

[0021] [Figure 61] FIG. 1 is a block diagram of an exemplary electrical device that may include a microelectronic structure or microelectronic assembly according to any of the embodiments disclosed herein. DETAILED DESCRIPTION OF THE INVENTION

[0022] Disclosed herein are microelectronic structures including bridges, and related assemblies and methods. In some embodiments, the microelectronic structures can include a substrate and a bridge within a cavity in the substrate. Microelectronic components can be bonded to both the substrate and the bridge.

[0023] To achieve high interconnect density in microelectronic packages, some conventional approaches require costly manufacturing operations, such as fine-pitch via formation in substrate layers over buried bridges and first-level interconnect plating, performed at the panel scale. The microelectronic structures and assemblies disclosed herein can achieve interconnect densities comparable to or greater than conventional approaches without the costly manufacturing operations. Furthermore, the microelectronic structures and assemblies disclosed herein offer electronics designers and manufacturers new flexibility, allowing them to select architectures that achieve their device goals without the added cost or manufacturing complexity.

[0024] In the following detailed description, reference is made to the accompanying drawings, which form a part hereof, wherein like numerals refer to like parts throughout and which show, by way of example, embodiments that may be practiced. It is understood that other embodiments may be utilized and structural or logical changes may be made without departing from the scope of the present disclosure. Therefore, the following detailed description is not to be taken in a limiting sense.

[0025] Various operations may be described sequentially as multiple separate acts or operations in a format that is most helpful in understanding the claimed subject matter. However, the order of description should not be construed to imply that these operations are necessarily order dependent. In particular, these operations may not be performed in the order presented. The described operations may be performed in a different order than in the described embodiment. In additional embodiments, various additional operations may be performed and / or described operations may be omitted.

[0026] For purposes of this disclosure, the phrase "A and / or B" means (A), (B), or (A and B). For purposes of this disclosure, the phrase "A, B, and / or C" means (A), (B), (C), (A and B), (A and C), (B and C), or (A, B, and C). The phrase "A or B" means (A), (B), or (A and B). The drawings are not necessarily to scale. While many of the drawings show rectilinear structures with flat walls and square corners, this is for ease of illustration only; actual devices fabricated using these techniques will have rounded corners, rough surfaces, and other features.

[0027] The phrases "in one embodiment" or "in one or more embodiments" are used herein, and each can refer to one or more of the same or different embodiments. Furthermore, terms such as "comprising," "including," and "having" when used with respect to embodiments of the present disclosure are synonymous. When used to describe a range of dimensions, the phrase "X to Y" refers to a range that includes X and Y.

[0028] FIG. 1 is a cross-sectional side view of an exemplary microelectronic structure 100. The microelectronic structure 100 can include a substrate 102 and a bridge component 110 within a cavity 120 on the “top” surface of the substrate 102. The substrate 102 can include a dielectric material 112 and a conductive material 108 disposed within the dielectric material 112 (e.g., within lines and vias, as shown) to provide a conductive path through the substrate 102. In some embodiments, the dielectric material 112 can include an organic material, such as an organic build-up film. In some embodiments, the dielectric material 112 can include, for example, a ceramic, an epoxy film with filler particles therein, glass, an inorganic material, or a combination of organic and inorganic materials. In some embodiments, the conductive material 108 can include a metal (e.g., copper). In some embodiments, the substrate 102 may include layers of dielectric material 112 / conductive material 108, with lines of conductive material 108 in one layer electrically coupled to lines of conductive material 108 in an adjacent layer by vias in the conductive material 108. A substrate 102 including such layers may be formed, for example, using printed circuit board (PCB) fabrication techniques. The substrate 102 may include N such layers (N is an integer greater than or equal to 1), and in the accompanying drawings, the layers are labeled in descending order from the side of the substrate 102 closest to the cavity 120 (e.g., Layer N, Layer N-1, Layer N-2, etc.). While particular numbers and arrangements of layers of dielectric material 112 / conductive material 108 are shown in various of the accompanying drawings, these particular numbers and arrangements are merely exemplary, and any desired number and arrangement of dielectric material 112 / conductive material 108 may be used. For example, although Figure 1 and others of the accompanying drawings do not show conductive material 108 on layer N-1 below bridge component 110, conductive material 108 may be present on layer N-1 below bridge component 110. Additionally, while a particular number of layers are shown on substrate 102 (e.g., five layers), these layers may represent only a portion of substrate 102, and additional layers may be present (e.g., layer N-5, layer N-6, etc.).

[0029] As described above, the microelectronic structure 100 may include a cavity 120 on the “top” surface of the substrate 102. In the embodiment of FIG. 1 , the cavity 120 extends through the surface insulating material 104 on the “top” surface, with the lower portion of the cavity provided by the “top” dielectric material 112. The surface insulating material 104 may include solder resist and / or other dielectric materials that may provide surface electrical insulation and may be compatible with solder-based or non-solder-based interconnects, as desired. In other embodiments, the cavity 120 of the substrate 102 may extend into the dielectric material 112, as described further below. The cavity 120 may have a tapered shape that narrows toward the lower portion of the cavity 120, as shown in FIG. 1 . The substrate 102 may include conductive contacts 114 on its “top” surface coupled to the conductive pathways formed by the conductive material 108 through the dielectric material 112, allowing components (not shown in FIG. 1 but described below with reference to FIG. 2) electrically coupled to the conductive contacts 114 to be electrically coupled to circuitry within the substrate 102 and / or other components electrically coupled to the substrate 102. The conductive contacts 114 may include a surface finish 116 that may protect the base material of the conductive contacts from corrosion. In some embodiments, the surface finish 116 may include nickel, palladium, gold, or a combination thereof. The conductive contacts 114 may be disposed on the “top” surface and outside the cavity 120, and as shown, the surface insulating material 104 may include openings at the bottom exposing the surface finish 116 of the conductive contacts 114. In FIG. 1, solder 106 (e.g., solder balls) may be disposed in the openings and in conductive contact with the conductive contacts 114. As shown in FIG. 1 and others of the accompanying drawings, these openings in the surface insulating material 104 may be tapered to narrow towards the conductive contacts 114 .In some embodiments, the solder 106 on the conductive contacts 114 may be a first level interconnect, while in other embodiments, a non-solder first level interconnect may be used to electrically couple the conductive contacts 114 to another component. As used herein, a "conductive contact" may refer to a portion of a conductive material (e.g., one or more metals) that serves as part of an interface between different components, and although some of the conductive contacts described herein are illustrated in particular forms in various of the accompanying drawings, any conductive contact may be recessed in a surface of the component, may be flush with the surface of the component, or may extend away from the surface of the component, and may take any suitable form (e.g., a conductive pad or socket).

[0030] The bridge component 110 may be disposed within the cavity 120 and may be bonded to the substrate 102. This bond may or may not include an electrical interconnect; in the embodiment of FIG. 1, the bridge component 110 is mechanically bonded to the dielectric material 112 of the substrate 102 by an adhesive 122 (e.g., a die attach film (DAF)) between the “bottom” surface of the bridge component 110 and the substrate 102, while other types of bond are described elsewhere herein. The bridge component 110 may include conductive contacts 118 on its “top” surface, which may be used to electrically bond the bridge component 110 to one or more other microelectronic components, as described below with reference to FIG. 2. The bridge component 110 may include conductive paths (e.g., including lines and vias, as described below with reference to FIG. 59) to the conductive contacts 118 (and / or to other circuitry included in the bridge component 110 and / or other conductive contacts of the bridge component 110, as described below). In some embodiments, the bridge component 110 may include a semiconductor material (e.g., silicon); for example, the bridge component 110 may be a die 1502, as described below with reference to FIG. 58, or may include an integrated circuit (IC) device 1600, as described below with reference to FIG. 59. In some embodiments, the bridge component 110 may be an "active" component in that it may include one or more active devices (e.g., transistors), while in other embodiments, the bridge component 110 may be a "passive" component in that it does not include one or more active devices. The bridge component 110 may be fabricated to allow for a greater density of interconnections than the substrate 102. As a result, the pitch 202 of the conductive contacts 118 of the bridge component 110 may be smaller than the pitch 198 of the conductive contacts 114 of the substrate 102.When multiple microelectronic components are coupled to the bridge component 110 (e.g., as described below with reference to FIG. 2 ), these microelectronic components may use electrical paths through the bridge component 110 (and other circuitry within the bridge component 110, if present) to achieve a higher density of interconnection between them compared to interconnections made via the conductive contacts 114 of the substrate 102.

[0031] The dimensions of the elements of the microelectronic structure 100 may have any suitable value. For example, in some embodiments, the thickness 138 of the metal lines of the conductive contacts 114 may be between 5 micrometers and 25 micrometers. In some embodiments, the thickness 128 of the surface finish 116 may be between 5 micrometers and 10 micrometers (e.g., 7 micrometers of nickel and less than 100 nanometers each of palladium and gold). In some embodiments, the thickness 142 of the adhesive 122 may be between 2 micrometers and 10 micrometers. In some embodiments, the pitch 202 of the conductive contacts 118 of the bridge component 110 may be less than 70 micrometers (e.g., 25 micrometers to 70 micrometers, 25 micrometers to 65 micrometers, 40 micrometers to 70 micrometers, or less than 65 micrometers). In some embodiments, the pitch 198 of the conductive contacts 114 may be greater than 70 micrometers (e.g., 90 micrometers to 150 micrometers). In some embodiments, the thickness 126 of the surface insulating material 104 may be between 25 micrometers and 50 micrometers. In some embodiments, the height 124 of the solder 106 above the surface insulating material 104 may be between 25 micrometers and 50 micrometers. In some embodiments, the thickness 140 of the bridge component 110 may be between 30 micrometers and 200 micrometers. In some embodiments, the microelectronic structure 100 may have a footprint of less than 100 square millimeters (e.g., between 4 square millimeters and 80 square millimeters).

[0032] A microelectronic structure 100 similar to that shown in FIG. 1 and others of the accompanying drawings may be included in a larger microelectronic assembly. FIG. 2 shows an example of such a microelectronic assembly 150, which may include one or more microelectronic components 130 having conductive contacts 134 coupled (e.g., by solder 106 or another interconnect structure) to conductive contacts 118 of a bridge component 110 and conductive contacts 132 coupled (e.g., by solder 106 or another interconnect structure, as described above) to conductive contacts 114 of a substrate 102. While FIG. 2 shows two microelectronic components 130 (microelectronic components 130-1 and 130-2), the microelectronic assembly 150 may include more or fewer microelectronic components 130. While FIG. 2 shows microelectronic components 130-1 / 130-2 as substantially "covering" the proximal surface of the microelectronic structure 100, this is merely illustrative and need not be the case. Furthermore, although Figures 1 and 2 (and others in the accompanying drawings) show the microelectronic structure 100 / microelectronic assembly 150 including a single bridge component 110 on the substrate 102, this is merely for ease of illustration, and the microelectronic structure 100 / microelectronic assembly 150 may include multiple bridge components 110 on the substrate 102.

[0033] The microelectronic component 130 may include conductive paths (e.g., including lines and vias, as described below with reference to FIG. 59 ) to the conductive contacts 132 / 134 (and / or other circuitry included in the microelectronic component 130 and / or other conductive contacts of the microelectronic component 130, not shown). In some embodiments, the microelectronic component 130 may include a semiconductor material (e.g., silicon); for example, the microelectronic component 130 may be a die 1502, as described below with reference to FIG. 58 , or may include an IC device 1600, as described below with reference to FIG. 59 . In some embodiments, the microelectronic component 130 may be an “active” component in that it may include one or more active devices (e.g., transistors), while in other embodiments, the microelectronic component 130 may be a “passive” component in that it does not include one or more active devices. In some embodiments, for example, the microelectronic component 130 may be a logic die. More generally, the microelectronic component 130 may include circuitry for performing any desired function. For example, one or more of the microelectronic components 130 may be logic dies (e.g., silicon-based dies), and one or more of the microelectronic components 130 may be memory dies (e.g., high-bandwidth memory). As discussed above with reference to FIG. 1, when multiple microelectronic components 130 are coupled to a bridge component 110 (e.g., as shown in FIG. 2), these microelectronic components 130 may use electrical paths through the bridge component 110 (and other circuitry within the bridge component 110, if present) to achieve a higher density interconnection between them compared to interconnections made through the conductive contacts 114 of the substrate 102.

[0034] As used herein, a "conductive contact" may refer to a portion of a conductive material (e.g., a metal) that acts as an interface between different components; the conductive contact may be recessed into the surface of the component, may be flush with the surface of the component, or may extend away from the surface of the component, and may take any suitable form (e.g., a conductive pad or socket).

[0035] In some embodiments, molding material 144 may be disposed between microelectronic structure 100 and microelectronic component 130, and may also be disposed between and above (not shown) microelectronic components 130. In some embodiments, molding material 144 may include multiple different types of molding materials, including an underfill material between microelectronic component 130 and microelectronic structure 100 and a different material disposed above and to the sides of microelectronic component 130. Examples of materials that may be used for molding material 144 include, preferably, epoxy materials.

[0036] The microelectronic assembly 150 also illustrates a surface insulating material 104 on the “bottom” side (opposite the “top” side) of the substrate 102, with tapered openings formed at the bottom where the conductive contacts 206 are located. Solder 106 may be disposed in these openings and in conductive contact with the conductive contacts 206. The conductive contacts 206 may also include a surface finish (not shown). In some embodiments, the solder 106 on the conductive contacts 206 may be a second level interconnect (e.g., solder balls in a ball grid array arrangement), while in other embodiments, a non-solder second level interconnect (e.g., a pin grid array arrangement or a land grid array arrangement) may be used to electrically couple the conductive contacts 206 to another component. The conductive contacts 206 / solder 106 (or other second level interconnects) are known in the art and may be used to couple the substrate 102 to another component, such as a circuit board (e.g., a motherboard), an interposer, or another IC package, as described below with reference to FIG. 60. In embodiments in which the microelectronic assembly 150 includes multiple microelectronic components 130, the microelectronic assembly 150 may be referred to as a multi-chip package (MCP). The microelectronic assembly 150 may include additional components, such as passive components (e.g., surface-mount resistors, capacitors, and inductors located on the "top" or "bottom" side of the substrate 102), active components, or other components.

[0037] 3-10 are cross-sectional side views of various stages in an exemplary process for fabricating the microelectronic assembly 150 of FIG. 2, according to various embodiments. The operations of the process of FIGS. 3-10 (and others of the accompanying figures described below) may be illustrated with reference to particular embodiments of the microelectronic structure 100 / microelectronic assembly 150 disclosed herein, although the method 1000 may be used to form any suitable microelectronic structure 100 / microelectronic assembly 150. Although the operations are illustrated in FIGS. 3-10 once each and in a particular order, these operations may be reordered and / or repeated as necessary (e.g., different operations may be performed in parallel when fabricating multiple microelectronic structures 100 / microelectronic assemblies 150).

[0038] Figure 3 shows an assembly including a preliminary substrate 102 including a dielectric material 112 and a patterned conductive material 108. The assembly of Figure 3 may be fabricated using conventional package substrate manufacturing techniques (e.g., stacking layers of dielectric material 112, etc.) and may include up to N-1 layers.

[0039] Figure 4 shows the assembly after fabricating an additional Nth layer for the preliminary substrate 102 of Figure 4. The assembly of Figure 4 includes the base metal of the conductive contacts 114. The assembly of Figure 4 may be manufactured using conventional package substrate manufacturing techniques.

[0040] FIG. 5 shows the assembly of FIG. 4 after a layer of surface insulating material 104 has been formed over it.

[0041] FIG. 6 shows the assembly of FIG. 5 after patterning openings in the surface insulating material 104 to expose the base metal of the conductive contacts 114, forming the surface finish 116 for the conductive contacts 114, and forming the cavities 120. In some embodiments, the openings in the surface insulating material 104 (including the cavities 120) may be formed by mechanical patterning, laser patterning, dry etching patterning, or lithographic patterning techniques. If laser or mechanical patterning techniques are used to form the cavities 120, the bottom of the cavities 120 may include undulations having an amplitude of 1 micrometer to 10 micrometers; if lithographic patterning techniques are used to form the cavities 120, the bottom of the cavities 120 may include undulations having an amplitude of less than 1 micrometer. In some embodiments in which the cavities 120 are laser patterned, there may be some roughness at the edges due to laser beam overlap (e.g., having an amplitude of 1 micrometer to 25 micrometers).

[0042] FIG. 7 shows the assembly of FIG. 6 after a cleaning operation has been performed on the assembly and solder 106 (eg, microballs) has been formed on the conductive contacts 114. FIG.

[0043] Figure 8 shows the assembly after attaching bridge component 110 to the exposed dielectric material 112 of cavity 120 of the assembly of Figure 7 using adhesive 122. In some embodiments, adhesive 122 may be DAF, and attaching bridge component 110 may include performing a film curing operation. The assembly of Figure 8 may take the form of microelectronic structure 100 of Figure 1.

[0044] 9 illustrates the assembly of FIG. 8 after attaching microelectronic component 130. In some embodiments, this attachment may include a thermocompression bonding (TCB) operation. In some embodiments, additional solder may be provided to conductive contacts 118, conductive contacts 132, and / or conductive contacts 134 prior to the TCB operation.

[0045] Figure 10 shows the assembly of Figure 9 after applying a molding material 144 to the assembly. As mentioned above, in some embodiments, the molding material 144 of Figure 10 may include multiple different materials (e.g., a capillary underfill material between the microelectronic component 130 and the microelectronic structure 100, and a different material over the microelectronic component 130). The assembly of Figure 10 may take the form of the microelectronic assembly 150 of Figure 2. As mentioned above, the molding material 144 may include an underfill material (e.g., a capillary underfill material).

[0046] Various of Figures 3-57 illustrate exemplary microelectronic structures 100 / microelectronic assemblies 105 having various features. These microelectronic structure 100 / microelectronic assembly 150 features may be suitably combined with any other features disclosed herein to form the microelectronic structure 100 / microelectronic assembly 150. For example, any of the microelectronic structures 100 disclosed herein may be coupled to one or more microelectronic components 130 (e.g., as described above with reference to Figures 2-10) to form the microelectronic assembly 150, and any of the microelectronic assemblies 150 disclosed herein may be fabricated separately from their constituent microelectronic structures 100. Several elements of Figures 1 and 2 are shared with Figures 3-57, and for ease of explanation, the description of these elements will not be repeated, and these elements may take the form of any of the embodiments disclosed herein.

[0047] The microelectronic structure 100 may include a cavity 120 on the “top” surface of the substrate 102 that extends through the surface insulating material 104 (e.g., as described above with reference to FIG. 1 ). In some embodiments, the dielectric material 112 of the substrate 102 may provide the lower portion of the cavity 120 (e.g., as described above with reference to FIG. 1 ), while in other embodiments, another material may provide the lower portion of the cavity 120. For example, FIGS. 11 and 12 show a microelectronic structure 100 that includes a metal layer 146 to which a bridge component 110 is bonded by an adhesive 122. The metal layer 146 may extend onto the (angled) sides of the cavity 120, as shown in FIG. 11 , or may be located only below the bridge component 110 / adhesive 122, as shown in FIG. 12 . In some embodiments, the metal layer 146 may comprise aluminum (which may be sputtered onto an assembly such as that of FIG. 7) or a multilayer of nickel-palladium-gold (which may be deposited by electroless deposition techniques onto an assembly such as that of FIG. 7). In embodiments such as that of FIG. 12, the initially deposited metal layer 146 may be patterned after attachment of the bridge component 110 to remove any metal layer 146 not obscured by the bridge component 110 / adhesive 122. In some embodiments, the thickness of the metal layer 146 may be less than the base metal thickness 138 of the conductive contacts 114, as shown. In embodiments such as those of FIGS. 11 and 12, the adhesive 122 may be an ultraviolet (UV)-curable epoxy (also referred to as a "snap-cure" epoxy) that quickly crosslinks in place upon exposure to UV light after deposition (without requiring a lengthy thermal cure). The metal layer 146 may act as a reflective surface during this UV exposure, allowing for the desired scattering and distribution of UV light to fully crosslink the epoxy.The use of a UV-curable epoxy as adhesive 122 may allow bridge component 110 to be quickly fixed in place, thereby reducing or eliminating shifting of bridge component 110 that typically occurs during subsequent processing operations.

[0048] 13 illustrates another embodiment in which the microelectronic structure 100 includes a mating metal to which the bridge component 110 is bonded by an adhesive 122. However, in FIG. 13, the metal is a metal pad 148 that is coplanar with and has the same thickness 138 as the base metal of the conductive contact 114. In some such embodiments, the metal pad 148 may present a roughened copper surface to which the adhesive 122 (e.g., DAF) can readily adhere.

[0049] The microelectronic structure 100 of Figures 1 and 11-13 may allow manufacturers to avoid expensive and complex manufacturing operations typically required for high-density interconnect structures (e.g., ultraviolet (UV) or carbon dioxide laser processing, first-level interconnect plating, etc.), thus speeding and reducing the cost of developing new structures.

[0050] In some embodiments, the microelectronic structure 100 may include a cavity 120 on the "top" surface of the substrate 102 that extends through the surface insulating material 104 and into the dielectric material 112 of the substrate 102. For example, FIGS. 14-16 show a microelectronic structure 100 that includes a cavity 120 that extends into the dielectric material 112, the lower portion of which is provided by a conductive material 108 (e.g., an N-1 layer of metal). Additionally, FIGS. 14-16 show a microelectronic structure 100 that includes a mating metal layer 146 to which a bridge component 110 is bonded by an adhesive 122. The metal layer 146 may extend onto the (angled) sides of the cavity 120, as shown in FIGS. 14 and 15, or may be located only below the bridge component 110 / adhesive 122, as shown in FIG. 16. In some embodiments, the metal layer 146 may comprise aluminum (which may be sputtered onto an assembly such as that of FIG. 7), gold, or a multilayer of nickel-palladium-gold (which may be deposited by electroless deposition techniques onto an assembly such as that of FIG. 7). In embodiments such as that of FIG. 16, the initially deposited metal layer 146 may be patterned after attachment of the bridge component 110 to remove any metal layer 146 not masked by the bridge component 110 / adhesive 122. In some embodiments, the thickness of the metal layer 146 may be less than the base metal thickness 138 of the conductive contacts 114, as shown. In embodiments such as FIGS. 14-16, the adhesive 122 may be an epoxy material (e.g., a UV-curable epoxy), as described above with reference to FIGS. 11-12.

[0051] In the embodiment of FIG. 15 , the adhesive 122 may include a peripheral adhesive 122-1 and a central adhesive 122-2. As described above, the peripheral adhesive 122-1 may be a UV-curable epoxy, and the central adhesive 122-2 may be a thermally curable epoxy. In manufacturing the microelectronic structure 100 of FIG. 15 , the peripheral adhesive 122-1 may first be cured by exposure to UV light (e.g., as described below with reference to FIGS. 17-25 ), and the resulting assembly may then be subjected to a heat treatment to cure the central adhesive 122-2. As described above, using a UV-curable epoxy as the adhesive 122 (or as part of the adhesive 122) may enable the bridge component 110 to be quickly fixed in place, thereby mitigating or eliminating shifting of the bridge component 110 that typically occurs during subsequent processing operations and dramatically improving the yield and ease of subsequent assembly operations (e.g., attachment of the microelectronic component 130).

[0052] 17-25 illustrate various stages in an exemplary process for fabricating the microelectronic structure 100 of FIG. 14, according to various embodiments. FIG. 17 illustrates the assembly of FIG. 5 after patterning openings in the surface insulating material 104 to expose the base metal of the conductive contacts 114. In some embodiments, the openings in the surface insulating material 104 (including the cavities 120) may be formed by mechanical patterning, laser patterning, dry etching patterning, or lithographic patterning techniques.

[0053] Figure 18 shows the assembly of Figure 18 after applying a mask material 158 over it. In some embodiments, the mask material 158 may include or be laminated onto a dry film resist (DFR) or polyethylene terephthalate (PET) film.

[0054] Figure 19 shows the assembly of Figure 18 after forming a cavity 120 in the assembly. As shown, the cavity 120 may be formed through the mask material 158, and any suitable technique may be used to form the cavity 120 (e.g., laser drilling). A cleaning operation (e.g., a water clean and / or a plasma etch clean) may be performed following the formation of the cavity 120.

[0055] Figure 20 shows the assembly of Figure 19 after forming a metal layer 146 thereon. Metal layer 146 may comprise any of the materials disclosed herein and may be deposited using any suitable technique (e.g., aluminum deposited by sputtering).

[0056] 21 shows the assembly of FIG. 20 after removing the mask material 158, resulting in removal of the portion of the metal layer 146 on the mask material 158. For example, if the mask material 158 is a PET film, the mask material 158 may be peeled off, or if the mask material 158 is a DFR, the mask material 158 may be stripped off.

[0057] Figure 22 shows the assembly of Figure 21 after depositing uncured adhesive 156 onto the metal layer 146 in the lower portion of cavity 120. When multiple types of adhesive 122 are used (e.g., as described above with reference to Figure 15), the multiple types of uncured adhesive 156 may be deposited in a desired pattern. Alternatively, a single type of uncured adhesive 156 (e.g., peripheral uncured adhesive 122-1) may be deposited first, and another type of uncured adhesive (e.g., central uncured adhesive 122-2) may be provided later (e.g., by capillary underfill after attachment of bridge component 110).

[0058] Figure 23 shows the assembly after a bond head 152 has been used to contact the bridge component 110 (along with the solder 106 on the conductive contacts 118) with the uncured adhesive 156 of the assembly of Figure 22. Once the bridge component 110 is properly positioned, a UV source 154 (e.g., a ring-shaped light-emitting diode (LED)) of the bond head 152 irradiates the uncured adhesive 156 with ultraviolet light, crosslinking the uncured adhesive 156 and resulting in the adhesive 122.

[0059] FIG. 24 shows the assembly after the bond head 152 has been retracted and a thermal cure (eg, at the panel level) of the assembly of FIG. 24 has been performed.

[0060] Figure 25 shows the assembly after forming surface finish 116 and solder 106 (e.g., microballs) on the conductive contacts 114 of Figure 24. The resulting assembly may take the form of microelectronic structure 100 of Figure 14.

[0061] Other manufacturing processes may be used to fabricate the microelectronic structure 100 of FIGS. 14-16. For example, instead of applying the mask material 158 before the formation of the metal layer 146, the mask material 158 may not be used; instead, the metal layer 146 may be formed after the cavities 120 are formed, and the excess metal layer 146 may be removed after the bridge component 110 is attached and before the solder 106 is applied (resulting in a microelectronic structure 100 like that of FIG. 16). In another process, the solder 106 may be applied after the cavities 120 are formed but before the bridge component 110 is attached, and after thermal curing of FIG. 24, the resulting assembly may be "flash etched" to remove the excess metal layer 146. Furthermore, in some embodiments, a "bump flattening" operation may be performed after the formation of the solder 106, and the assembly may be subjected to a controlled "downward" force at a controlled temperature to achieve a desired height profile of the solder 106.

[0062] Instead of, or in addition to, the above-described technique utilizing UV-curable adhesive 122, other techniques can be used to control standoff between microelectronic structure 100 and microelectronic component 130. For example, FIG. 26 is a side cross-sectional view of an exemplary microelectronic structure 100 including a metal-core solder ball 164 in contact with a conductive contact 114 (e.g., instead of solder alone, as shown in some of the preceding figures). Metal-core solder ball 164 may include a metal ball 162 (e.g., including copper) with a surface finish to mitigate corrosion (e.g., nickel, nickel-palladium-gold multilayer, etc.) and a thin layer of solder 106 coating metal ball 162. In some embodiments, metal ball 162 may have a diameter between 10 micrometers and 300 micrometers (e.g., between 50 micrometers and 70 micrometers, or between 60 micrometers and 70 micrometers). In some embodiments, the thickness of the layer of solder 106 on the metal ball 162 may be 1 micrometer to 15 micrometers, and after reflowing the solder 106 on the metal core solder ball 164, the solder 106 may flow down toward the conductive contact 114, as shown in Figure 26. As shown in Figure 26, the metal ball 162 may occupy a majority of the volume of the corresponding opening in the surface insulating material 104 and may extend above the top surface of the surface insulating material 104.

[0063] Figures 27-28 are cross-sectional side views of various stages in an exemplary process for fabricating the microelectronic structure 100 of Figure 26. Figure 27 shows the assembly of Figure 6 after printing a layer of flux 160 on the conductive contacts 114 and disposing metal-core solder balls 164 on the flux 160. Figure 28 shows the assembly of Figure 27 after performing a solder reflow (and deflux) to melt the solder 106 around the metal balls 162, and then attaching the bridge component 110 to the exposed dielectric material 112 of the cavity 120 with an adhesive 122, resulting in the microelectronic structure 100 of Figure 26. Although Figures 26 and 28 show a single adhesive 122 and Figures 26-28 show the cavity 120 as having a particular depth and base material, any of the embodiments of these features disclosed herein may be used. Because the metal-core solder balls 164 contain a small amount of solder 106, there is little chance that the height or profile of the metal-core solder balls 164 will change after a solder reflow operation. Figures 26-28 also show solder 106 on the conductive contacts 118 of the bridge component 110, and in some embodiments, this solder 106 (e.g., tin-based solder) may be microbumps provided on the bridge component 110 prior to attaching the bridge component 110 to the substrate 102. Attachment of a microelectronic component 130 (e.g., as described above with reference to Figures 2-10) may then be performed on the microelectronic structure 100 of Figure 25, taking advantage of the predictable height of the metal-core solder balls 164 and the solid "backstop" they provide.

[0064] 29 and 32 illustrate that, instead of or in addition to the above-described technique utilizing UV-curable adhesive 122, additional techniques may be used to control standoff between microelectronic structure 100 and microelectronic component 130. FIG. 29 is a cross-sectional side view of an exemplary microelectronic structure 100 including multiple melting point solder balls 170 in contact with conductive contacts 114. Multiple melting point solder balls 170 may include a core of high-temperature solder 168 and a thin layer of low-temperature solder 166 coating high-temperature solder 168. As used herein, the terms "high-temperature solder" and "low-temperature solder" are used relative to each other, with high-temperature solder 168 having a higher melting point than low-temperature solder 166. In some embodiments, high-temperature solder 168 may have a melting point above 200°C (e.g., 220°C to 300°C), and low-temperature solder 166 may have a melting point below 200°C (e.g., 112°C to 190°C). Other combinations may be used (e.g., a high-temperature solder 168 with a melting point of 189°C and a low-temperature solder 166 with a melting point of 117°C, or a high-temperature solder 168 with a melting point of 300°C and a low-temperature solder 166 with a melting point of 230°C). In some embodiments, the high-temperature solder 168 may include tin, silver, or antimony, and the low-temperature solder 166 may include indium, bismuth, zinc, or lead. As shown in FIG. 29, after reflowing the low-temperature solder 166 of the multi-melting point solder ball 170, the low-temperature solder 166 may flow down toward the conductive contact 114. As shown in FIG. 29, the high-temperature solder 168 may occupy a majority of the volume of the corresponding opening in the surface insulating material 104 and may extend above the top surface of the surface insulating material 104. Although FIG. 29 (and FIG. 31 discussed below) shows the high temperature solder 168 as retaining a spherical shape, this is merely exemplary and the high temperature solder 168 can take any of a number of forms.If the high-temperature solder 168 does not undergo reflow during subsequent manufacturing operations, the high-temperature solder 168 may retain its spherical shape or may appear as a “flattened” sphere with flatter surfaces at the bottom (proximate the conductive contact 114) and top (proximate the conductive contact 132 of the microelectronic component 130, not shown). The “flattened” sphere of high-temperature solder 168 may remain proximate the conductive contact 114 or may float within the solder joint. If the high-temperature solder 168 floats within the solder joint, the orientation of the sphere may change. If the high-temperature solder 168 undergoes reflow during subsequent manufacturing operations, the high-temperature solder 168 may form a gradient with the low-temperature solder 166 (with more low-temperature solder 166 proximate the conductive contact 114) or the high-temperature solder 168 may be more thoroughly intermixed with the low-temperature solder 166.

[0065] 30-31 are cross-sectional side views of various stages in an exemplary process for fabricating the microelectronic structure 100 of FIG. 29. FIG. 30 shows the assembly of FIG. 6 after printing a layer of flux 160 onto the conductive contacts 114 and disposing high-melting-point solder balls 170 on the flux 160. FIG. 31 shows the assembly of FIG. 30 after performing a (low-temperature) solder reflow (and deflux) to melt the low-temperature solder 166 around a core of high-temperature solder 168, and then attaching the bridge component 110 to the exposed dielectric material 112 of the cavity 120 using adhesive 122, resulting in the microelectronic structure 100 of FIG. 29. Although a single adhesive 122 is shown in FIGS. 29-31 and the cavity 120 is shown in FIGS. 29-31 as having a particular depth and base material, any of the embodiments of these features disclosed herein may be used. Due to the small amount of low-temperature solder 166 contained in the multiple melting point solder balls 170, there is little chance of the height or profile of the multiple melting point solder balls 170 changing after the solder reflow operation. Figures 29-31 also illustrate the solder 106 on the conductive contacts 118 of the bridge component 110, which in some embodiments (e.g., tin-based solder) may be microbumps provided on the bridge component 110 prior to attaching the bridge component 110 to the substrate 102. Attachment of the microelectronic component 130 (e.g., as described above with reference to Figures 2-10) may then be performed on the microelectronic structure 100 of Figure 29, taking advantage of the predictable height of the multiple melting point solder balls 170 and the solid "backstop" they provide.

[0066] FIG. 32 is a cross-sectional side view of an exemplary microelectronic structure 100 including a metal post 172 (e.g., a copper post) in contact with a conductive contact 114. A surface finish 116 may be disposed on top of the metal post 172, as shown. As shown in FIG. 32, the metal post 172 may generally fill the corresponding opening in the surface insulating material 104 or may extend above the top surface of the surface insulating material 104. In some embodiments, the metal post 172 may extend above the top surface of the surface insulating material 104 by a distance 176 of 20 micrometers to 30 micrometers. In some embodiments, the metal post 172 may be undercut relative to the surface finish 116, as shown in FIG. 32.

[0067] 33-34 are cross-sectional side views of various stages in an exemplary process for fabricating the microelectronic structure 100 of FIG. 32. FIG. 33 shows the assembly of FIG. 6 after depositing and patterning a layer of surface insulating material 174 (e.g., photoresist) on the assembly. The surface insulating material 174 may be patterned with openings corresponding to desired locations of metal posts 172. FIG. 34 shows the assembly of FIG. 33 after plating a metal (e.g., copper) on the assembly to form the metal posts 172 and form the surface finish 116, and then stripping the surface insulating material 174 (and performing a seed etch to remove the metal seed layer used in the plating operation). A bridge component 110 may then be attached to the exposed dielectric material 112 of the cavity 120 of the assembly of FIG. 34 using adhesive 122, resulting in the microelectronic structure 100 of FIG. 32. While Figure 32 illustrates a single adhesive 122 and Figures 32-34 illustrate the cavity 120 as having a particular depth and base material, any of the embodiments of these features disclosed herein may be used. Figures 33-34 also illustrate the solder 106 on the conductive contacts 118 of the bridge component 110; in some embodiments, this solder 106 (e.g., tin-based solder) may be microbumps provided on the bridge component 110 prior to attaching the bridge component 110 to the substrate 102. Attachment of the microelectronic component 130 (e.g., as described above with reference to Figures 2-10) may then be performed on the microelectronic structure 100 of Figure 32 using the solder provided on the conductive contacts 132 of the microelectronic component 130 to bond the conductive contacts 132 to the metal posts 172, taking advantage of the predictable height of the metal posts 172 and the solid "backstop" they provide.

[0068] Although various of the figures herein depict the substrate 102 as a coreless substrate (e.g., having vias that all taper in the same direction), any of the substrates 102 disclosed herein may be cored substrates 102. For example, Figure 35 illustrates a microelectronic structure 100 having similar features to the microelectronic structure of Figure 32, but having a substrate 102 with a core 178 (through which a conductive pathway, not shown, may extend). As shown in Figure 35, the cored substrate 102 may include vias that taper toward the core 178 (and thus taper in the opposite direction on the opposite side of the core 178).

[0069] Instead of, or in addition to, the above-described techniques utilizing UV-curable adhesives 122 and / or various interconnection arrangements on the conductive contacts 114 of the substrate 102, other techniques may be used to control standoff between the microelectronic structure 100 and the microelectronic component 130. For example, FIGS. 36-41 show exploded views of an exemplary microelectronic assembly 150 including an arrangement of high-temperature solder 168 and low-temperature solder 166 for standoff control, according to various embodiments. In the microelectronic assembly 150 of FIG. 36, the high-temperature solder 168 may be disposed on the conductive contacts 114 of the substrate 102, and the high-temperature solder 168 may be disposed between the low-temperature solder 166 and the conductive contacts 132 / 134 of the microelectronic component 130. In some embodiments, the low-temperature solder 166 may be plated over the high-temperature solder 168 on the conductive contacts 132 / 134. When the microelectronic component 130 is brought into contact with the microelectronic structure 100 (e.g., during a TCB operation as described herein), only the low-temperature solder 166 may melt, thereby providing a higher overall solder height on the conductive contacts 132 / 134 without side-wicking of the solder. The presence of the high-temperature solder 168 on the conductive contacts 134 may allow the microelectronic component 130 to make a hard stop on the bridge component 110, if desired, and the amount of low-temperature solder 166 contacting the conductive contacts 118 can be selected to achieve a desired solder height. More generally, the high-temperature solder 168 of the microelectronic assembly 150 of FIG. 36 may function as a solder standoff to improve reliability during manufacturing.

[0070] In the microelectronic assembly 150 of FIG. 37 , low-temperature solder 166 may be disposed on the conductive contacts 114 of the substrate 102, and high-temperature solder 168 may be disposed between the low-temperature solder 166 and the conductive contacts 132 / 134 of the microelectronic component 130. In some embodiments, the low-temperature solder 166 may be plated on top of the high-temperature solder 168 on the conductive contacts 132 / 134. When the microelectronic component 130 is brought into contact with the microelectronic structure 100 (e.g., during a TCB operation as described herein), only the low-temperature solder 166 may melt, thereby providing a higher overall solder height on the conductive contacts 132 / 134 without side wicking of the solder. As described above with reference to FIG. 36 , the presence of the high-temperature solder 168 on the conductive contacts 134 may allow the microelectronic component 130 to make a hard stop on the bridge component 110, if desired, and the amount of low-temperature solder 166 contacting the conductive contacts 118 can be selected to achieve a desired solder height. The low temperature solder 166 on the conductive contacts 134 may provide a higher collapse window for interconnects to the conductive contacts 134 during manufacturing.

[0071] In the microelectronic assembly 150 of FIG. 38 , the high-temperature solder 168 may be disposed on the conductive contacts 114 of the substrate 102, the high-temperature solder 168 may be disposed on the conductive contacts 132 of the microelectronic component 130, and the high-temperature solder 168 may be disposed between the low-temperature solder 166 and the conductive contacts 134 of the microelectronic component 130. In some embodiments, the low-temperature solder 166 may be plated on top of the high-temperature solder 168 on the conductive contacts 134. When the microelectronic component 130 is brought into contact with the microelectronic structure 100 (e.g., during a TCB operation as described herein), only the low-temperature solder 166 may melt, which can provide a higher overall solder height on the conductive contacts 134 without side-wicking of the solder. The high-temperature solder 168 may melt after the bumps of the low-temperature solder 166 collapse, so as to minimally or not at all disrupt the bonding of the low-temperature solder 166. The presence of high-temperature solder 168 on the conductive contacts 134 can allow the microelectronic component 130 to make a hard stop on the bridge component 110, if desired, and the amount of low-temperature solder 166 contacting the conductive contacts 118 can be selected to achieve a desired solder height.

[0072] As mentioned above, in some embodiments, bridge component 110 may include conductive contacts other than conductive contact 118 on its "top" surface; for example, as shown in FIGS. 39-57, bridge component 110 may include conductive contact 182 on its "bottom" surface. Conductive contact 182 of bridge component 110 may be conductively coupled (e.g., by solder 106 or another type of interconnect) to conductive contact 180 in the bottom of cavity 120 in substrate 102. In some embodiments, conductive contact 180 may be in the bottom of a corresponding cavity in dielectric material 112, as shown. Conductive contacts 180 may include surface finish 116 on their exposed surfaces, as shown. A direct electrical connection between the substrate 102 and the bridge component 110 (i.e., an electrical connection that does not pass through the microelectronic component 130) may enable a direct power and / or input / output (I / O) path between the substrate 102 and the bridge component 110, which may result in power delivery and / or signal delay advantages. In some embodiments, the pitch of the conductive contacts 182 may be between 40 micrometers and 1 millimeter (e.g., between 40 micrometers and 50 micrometers, or between 100 micrometers and 1 millimeter). In embodiments in which the bridge component 110 includes conductive contacts 182 on its “bottom” surface for coupling to conductive contacts 180 in the lower portion of the cavity 120 of the substrate 102, a dielectric material (e.g., a capillary underfill material) may support these connections. Such material is not shown in various of the accompanying drawings for clarity of illustration.

[0073] Any of the preceding embodiments may be combined with a bridge component 110 having conductive contacts 118 and 182 on opposing sides. For example, FIG. 39 illustrates an embodiment in which the conductive contacts 182 are coupled to the substrate 102 by solder. In particular, in the microelectronic assembly 150 of FIG. 39 , high-temperature solder 168 may be disposed on the conductive contacts 114 of the substrate 102, high-temperature solder 168 may be disposed between the low-temperature solder 166 and the conductive contacts 132 / 134 of the microelectronic component 130 (similar to the embodiment of FIG. 36 ), or high-temperature solder 168 may be disposed between the conductive contacts 182 of the bridge component 110 and the conductive contacts 180 in the cavity 120 of the substrate 102. In some embodiments, the low-temperature solder 166 may be plated over the high-temperature solder 168 on the conductive contacts 132 / 134. When the microelectronic component 130 is brought into contact with the microelectronic structure 100 (e.g., during a TCB operation as described herein), only the low-temperature solder 166 may melt, which may allow the bridge component 110 to remain fixed in place during attachment of the microelectronic component 130. The presence of the high-temperature solder 168 on the conductive contacts 134 may allow the microelectronic component 130 to make a hard stop on the bridge component 110, if desired, and the amount of low-temperature solder 166 contacting the conductive contacts 118 may be selected to achieve a desired solder height.

[0074] In the microelectronic assembly 150 of FIG. 40 , low-temperature solder 166 may be disposed on the conductive contacts 114 of the substrate 102, high-temperature solder 168 may be disposed between the low-temperature solder 166 and the conductive contacts 132 / 134 of the microelectronic component 130 (similar to the embodiment of FIG. 37 ), and high-temperature solder 168 may be disposed between the conductive contacts 182 of the bridge component 110 and the conductive contacts 180 in the cavity 120 of the substrate 102. In some embodiments, the low-temperature solder 166 may be plated on top of the high-temperature solder 168 on the conductive contacts 132 / 134. When the microelectronic component 130 is brought into contact with the microelectronic structure 100 (e.g., during a TCB operation as described herein), only the low-temperature solder 166 may melt, which may allow the bridge component 110 to remain fixed in place during attachment of the microelectronic component 130. As mentioned, the presence of high-temperature solder 168 on the conductive contacts 134 may allow the microelectronic component 130 to hard stop on the bridge component 110, if desired, and the amount of low-temperature solder 166 contacting the conductive contacts 118 may be selected to achieve a desired solder height. The low-temperature solder 166 on the conductive contacts 134 may provide a higher collapse window for interconnects to the conductive contacts 134 during fabrication.

[0075] In the microelectronic assembly 150 of FIG. 41 , the high-temperature solder 168 may be disposed on the conductive contacts 114 of the substrate 102, the high-temperature solder 168 may be disposed on the conductive contacts 132 of the microelectronic component 130, the high-temperature solder 168 may be disposed between the low-temperature solder 166 and the conductive contacts 134 of the microelectronic component 130 (similar to the embodiment of FIG. 38 ), or the high-temperature solder 168 may be disposed between the conductive contacts 182 of the bridge component 110 and the conductive contacts 180 in the cavity 120 of the substrate 102. In some embodiments, the low-temperature solder 166 may be plated over the high-temperature solder 168 on the conductive contacts 134. When the microelectronic component 130 is brought into contact with the microelectronic structure 100 (e.g., during a TCB operation as described herein), only the low-temperature solder 166 may melt, which may allow the bridge component 110 to remain fixed in place during attachment of the microelectronic component 130. The high-temperature solder 168 may melt after the bumps of the low-temperature solder 166 collapse so as to minimally or not at all interfere with the bonding of the low-temperature solder 166. The presence of the high-temperature solder 168 on the conductive contacts 134 may allow the microelectronic component 130 to make a hard stop on the bridge component 110, if desired, and the amount of low-temperature solder 166 contacting the conductive contacts 118 can be selected to achieve a desired solder height.

[0076] While the conductive contacts 180 in FIGS. 39-41 are shown as having a substantially planar surface facing the bridge component 110, in other embodiments, the conductive contacts 180 may have a non-planar surface. Such embodiments may allow for adjustment of the spacing between the bridge component 110 and the substrate 102 during fabrication, thereby facilitating achieving a desired offset distance between the top surface of the bridge component 110 and the top surface of the substrate 102 and facilitating attachment of the microelectronic component 130. For example, FIGS. 42-44 illustrate a microelectronic structure in which the conductive contacts 180 have a planar portion 180A and a non-planar portion 180B. The planar portion 180A may be an exposed pad of a metal layer (e.g., the N-1 layer or another layer) of the substrate 102, and the non-planar portion 180B may be disposed on or otherwise formed on the planar portion 180A. The non-planar portion 180B may have the same material composition as the planar portion 180A or a different material composition. In some embodiments, the non-planar portion 180b may comprise copper or gold. In some embodiments, the conductive contact 180 (planar or non-planar) may span multiple bridge components 110 that are in contact with a common microelectronic component 130.

[0077] In the embodiment of FIG. 42, non-planar portion 180B may have an arcuate shape and include multiple wire segments formed into an arc shape (e.g., forming a dome of the wire) with the ends of the wires secured (e.g., secured by wire bonds) to planar portion 180A. In the embodiment of FIG. 43, non-planar portion 180B has a pointed shape, with its tip facing bridge component 110. Such a pointed shape may be formed by ball-bonding a bond wire to planar portion 180A and then cutting the bond wire to the desired length. In the embodiment of FIG. 44, non-planar portion 180B has an elongated "S" shape and forms a cantilever on planar portion 180A. Such a cantilever may be formed by stitch-bonding a bond wire to planar portion 180A and then cutting the bond wire to the desired length. Lithography techniques may be used to form non-planar portion 180B instead of, or in addition to, the wire bonding techniques described herein. In embodiments in which the conductive contacts 180 include non-planar portions 180B, solder 106 (as shown in Figures 42-44) or another interconnect structure may conductively couple the non-planar portions 180B to the conductive contacts 182 of the bridge component 110, and the shape of the non-planar portions 180B may allow the z-height of the bridge component 110 of the microelectronic structure to be adjusted during fabrication to achieve a desired relative positioning of the bridge component 110 and the substrate 102.

[0078] 45-47 illustrate further examples of microelectronic assemblies 150 in which solders having different melting points may be used to improve ease of manufacturing and reliability of the interconnections between elements of the microelectronic assembly 150. For example, FIG. 45 illustrates an embodiment in which low-temperature solder 166 is disposed on the conductive contacts 116 / 180 of the substrate 102, low-temperature solder 166 is disposed on the conductive contacts 132 / 134 of the microelectronic component 130, and high-temperature solder 168 is disposed on the conductive contacts 118 of the bridge component 110. As discussed above, the hierarchy of solder melting temperatures in such microelectronic assemblies 150 may enable selective melting of the solder. For example, utilizing low-temperature solder 166 on the "underside" of the bridge component 110 may enable TCB attachment of the bridge component 110 to the substrate 102 by applying heat from either the "top" or "bottom" side. Heating the microelectronic structure 100 from the "bottom" side allows for more heating of this low-temperature solder 166, thus reducing the likelihood of melting or softening the high-temperature solder 168 on the "top" side of the bridge component 110. Such selective melting of the solder may allow a TCB bond head to contact the high-temperature solder 168 on the "top" surface of the bridge component 110 and melt the low-temperature solder 166 on the "bottom" surface of the bridge component 110 without undesirably bonding the bridge component 110 to the TCB bond head with molten solder.

[0079] Figure 46 shows an embodiment similar to Figure 45, but with a polymer material 186 (e.g., a bond reinforcement paste) disposed around the low-temperature solder 166 between the bridge component 110 and the substrate 102. The use of such a polymer material 186 can help to "freeze" the bond between the bridge component 110 and the substrate 102 in place, facilitating subsequent manufacturing operations.

[0080] Figure 47 shows another embodiment similar to Figure 45, but with adhesive dots 190 (e.g., dots of hardening epoxy) disposed between the "bottom" surface of the bridge component 110 and the dielectric material 112 of the substrate 102. These adhesive dots 190 may be distributed around the low-temperature solder 166 and may be used instead of, or in addition to, the polymer material 186 (described above with reference to Figure 46) to "freeze" the bond between the bridge component 110 and the substrate 102 in place, facilitating subsequent manufacturing operations.

[0081] In some embodiments, a non-solder material may be used to conductively bond the bridge component 110 and the substrate 102. For example, FIG. 48 shows an embodiment in which a conductive adhesive 184 is used to conductively bond the conductive contacts 182 of the bridge component 110 to the conductive contacts 180 of the substrate 102. In some embodiments, the conductive adhesive 184 may include a polymer and a conductive filler (e.g., a metal such as silver, or a conductive polymer) and may be cured to "set" the bond between the bridge component 110 and the substrate 102.

[0082] In some embodiments, the solder material used to bond the bridge component 110 and the substrate 102 may be selected to “solidify” the bond in place for subsequent manufacturing operations. FIG. 49 illustrates an embodiment in which an intermetallic compound (IMC) or transient liquid phase sintering (TLPS) material 188 is used to conductively bond the conductive contacts 182 of the bridge component 110 to the conductive contacts 180 of the substrate 102. In embodiments in which the material 188 is an IMC material, the bridge component 110 may be soldered to the substrate 102 using a solder chemistry in which the initial solder material is rapidly converted to IMC. In some embodiments, such a solder chemistry may include a mixture of low-temperature and high-temperature solder particles suspended in a flux and epoxy carrier. In embodiments in which the material 188 is a TLPS material, a low-temperature sinterable material (e.g., a copper-tin polymer material with a peak reflow temperature of 220° C.) may be heated between the conductive contacts 182 and 180 to form a strong metallurgical bond that does not reflow during subsequent assembly operations. The TLPS material 188 may have a distinct sintered structure with the epoxy and IMC trapped in internal pockets.

[0083] In some embodiments including conductive contacts 180 within the cavity 120 of the substrate 102, the conductive contacts 180 may or may not be located at the “deepest” point within the cavity 120. Such embodiments can advantageously provide a larger volume between the bridge component 110 and the substrate 102, providing a “chip gap” large enough to allow the use of underfill material between the bridge component 110 and the substrate 102. For example, FIG. 50 illustrates an embodiment in which the conductive contacts 180 are located on the N-1 layer and the cavity 120 extends to the N-2 layer. In some such embodiments, the metal of the N-1 and N-2 layers may together provide a laser stop for the laser drill used to form the cavity 120, and thus some portions of the cavity 120 may extend below the N-2 layer. FIG. 51 illustrates an embodiment similar to FIG. 50 , but in which the conductive contacts 180 are located on the N-2 layer and a portion of the underside of the cavity 120 is provided by the metal of the N-1 layer. 50, in some embodiments, such as that of FIG. 51, the metal of the N-1 and N-2 layers may together provide a laser stop for the laser drill used to form cavity 120, and thus some portions of cavity 120 may extend below the N-2 layer. The metal of the N-1 layer closest to conductive contact 180 may provide a ring around that conductive contact 180 to avoid an undesirable electrical short if solder 106 on that conductive contact 180 contacts the nearest N-1 metal.

[0084] Figure 52 shows an embodiment in which, like the embodiment of Figure 51, conductive contact 180 is located on the N-2 layer, but a portion of the underside of cavity 120 is provided by dielectric material 112 underlying the N-1 layer. A substrate 102 such as that of Figure 52 may be made by providing a solid metal portion in the region of cavity 120 on the N-1 layer (as part of an initial substrate manufacturing process) and performing an initial cavity formation step by laser drilling and stopping on this solid metal portion, which may then be removed (e.g., by etching, possibly leaving some of the metal surrounding the solid metal portion, as shown in Figure 52), and then performing a second cavity formation step by laser drilling to expose conductive contact 180 on the N-2 layer.

[0085] FIG. 53 illustrates another embodiment in which the conductive contact 180 is located in a metal layer below the N layer (e.g., the N-1 layer as shown), and a portion of the lower surface of the cavity 120 is provided by a dielectric material 112. In contrast to the embodiment of FIG. 52, the dielectric material 112 at the bottom of the cavity 120 is the dielectric material 112 that is below the metal layer on which the conductive contact 180 is located (i.e., the top surface of the dielectric material 112 at the bottom of the cavity 120 is flush with the bottom surface of the conductive contact 180). FIGS. 54-55 are cross-sectional side views of various stages in an exemplary process for fabricating the microelectronic structure of FIG. 53. FIG. 54 illustrates the assembly of FIG. 7 after laser drilling, stopping on solid metal portions in the region of the cavity 120 in the N-1 layer (as part of the initial substrate fabrication process). FIG. 55 illustrates the assembly after performing a patterned etch of a portion of the solid metal portion of FIG. 54, with the remaining metal providing the conductive contact 180. The bridge component 110 may then be attached to the assembly of FIG. 55 to form the microelectronic structure 100, and the microelectronic component 130 may be bonded to the microelectronic structure 100 to form the microelectronic assembly 150 of FIG. 53.

[0086] FIG. 56 shows another embodiment in which conductive contact 180 is located on a metal layer below the N layer (e.g., the N-1 layer as shown), and a portion of the lower surface of cavity 120 is provided by dielectric material 112. In contrast to the embodiment of FIG. 53, the upper surface of dielectric material 112 at the bottom of cavity 120 is flush with the upper surface of conductive contact 180. Embodiments such as that of FIG. 56 may also include a metal ring 192 flush with conductive contact 180 near the edge of cavity 120, as shown. Substrate 102 such as that of FIG. 56 may be made by providing conductive contact 180 and metal ring 192 in the N-1 layer (as part of the initial substrate manufacturing process) and depositing a sacrificial film over the area on the N-1 layer corresponding to cavity 120. After completion of the initial substrate 102, the rings corresponding to the ends of the cavity 120 may be laser drilled, stopping on the metal ring 192, and the sacrificial film (now exposed at its ends) may be released and any material above the sacrificial film may be removed.

[0087] Although various of the embodiments disclosed herein are shown in terms of embodiments in which the conductive contacts 118 on the “top” surface of the bridge component 110 are exposed to the microelectronic structure 100 (i.e., an “open cavity” configuration), any suitable ones of the embodiments disclosed herein may be utilized in embodiments in which an additional layer of substrate 102 is built on and surrounds the bridge component 110 (i.e., an “embedded” configuration). For example, FIG. 57 illustrates a microelectronic assembly 150 like that of FIG. 50 , but with additional dielectric material 112 and metal layers disposed “on top” of the bridge component 110. As shown in FIG. 57 , conductive pads and vias through this “additional” material may be used to enable the microelectronic component 130 to be conductively coupled to the conductive contacts 118 through the intervening material of the substrate 102. Similarly, any suitable ones of the embodiments disclosed herein may be utilized in such an embedded configuration.

[0088] The microelectronic structures 100 and microelectronic assemblies 150 disclosed herein may be included in any suitable electronics component. Figures 58-61 illustrate various examples of devices that may include any of the microelectronic structures 100 and microelectronic assemblies 150 disclosed herein, or that may optionally be included in the microelectronic structures 100 and microelectronic assemblies 150 disclosed herein.

[0089] FIG. 58 is a top view of a wafer 1500 and a die 1502 that may be included in any of the microelectronic structures 100 and microelectronic assemblies 150 disclosed herein. For example, the die 1502 may be included in the microelectronic structure 100 / microelectronic assembly 150 as (or as part of) the bridge component 110 and / or the microelectronic component 130. The wafer 1500 may be composed of a semiconductor material and may include one or more die 1502 having IC structures formed on the surface of the wafer 1500. Each die 1502 may be a repeating unit of a semiconductor product, including any suitable IC. After fabrication of the semiconductor product is complete, the wafer 1500 may undergo a singulation process in which the die 1502 are separated from one another to provide separate “chips” of the semiconductor product. The die 1502 may include one or more transistors (e.g., part of the transistor 1640 in FIG. 59 , described below), one or more diodes, and / or support circuitry for routing electrical signals to the transistors, as well as any other IC components. In some embodiments, die 1502 may be a "passive" die in that it does not include active components (e.g., transistors), while in other embodiments, die 1502 may be an "active" die in that it includes active components. In some embodiments, wafer 1500 or die 1502 may include memory devices (e.g., random access memory (RAM) devices), such as static RAM (SRAM) devices, magnetic RAM (MRAM) devices, resistive RAM (RRAM) devices, conductive bridge RAM (CBRAM) devices, etc.), logic devices (e.g., AND, OR gates, NAND gates, or NOR gates), or any other suitable circuit elements. Multiple of these devices may be combined on a single die 1502.For example, a memory array formed by multiple memory devices may be formed on the same die 1502 as a processing device (e.g., processing device 1802 of FIG. 61) or other logic configured to store information in the memory devices or execute instructions stored in the memory array.

[0090] FIG. 59 is a cross-sectional side view of an IC device 1600 that may be included in the microelectronic structure 100 and / or microelectronic assembly 150. For example, the IC device 1600 may be included in the microelectronic structure 100 / microelectronic assembly 150 as (or as part of) the bridge component 110 and / or the microelectronic component 130. The IC device 1600 may be part of a die 1502 (e.g., as described above with reference to FIG. 58). One or more of the IC devices 1600 may be included in one or more dies 1502 ( FIG. 58 ). The IC device 1600 may be formed on a substrate 1602 (e.g., wafer 1500 of FIG. 58 ) or may be included in a die (e.g., die 1502 of FIG. 58 ). The substrate 1602 may be a semiconductor substrate composed of a semiconductor material system, including, for example, an n-type material system or a p-type material system (or a combination of both). Substrate 1602 may include, for example, a crystalline substrate formed using bulk silicon or a silicon-on-insulator (SOI) substructure. In some embodiments, substrate 1602 may be formed using alternative materials, which may or may not be combined with silicon, including, but not limited to, germanium, indium antimonide, lead telluride, indium arsenide, indium phosphide, gallium arsenide, or gallium antimonide. Additional materials classified as II-VI, III-V, or IV may also be used to form substrate 1602. While several examples of materials from which substrate 1602 may be formed are described herein, any material capable of serving as the foundation for IC device 1600 may be used. Substrate 1602 may be part of a singulated die (e.g., die 1502 of FIG. 58) or part of a wafer (e.g., wafer 1500 of FIG. 58).

[0091] The IC device 1600 may include one or more device layers 1604 disposed on a substrate 1602. The device layer 1604 may include features of one or more transistors 1640 (e.g., metal-oxide-semiconductor field-effect transistors (MOSFETs)) formed on the substrate 1602. The device layer 1604 may include, for example, one or more source and / or drain (S / D) regions 1620, a gate 1622 for controlling the flow of current in the transistor 1640 between the S / D regions 1620, and one or more S / D contacts 1624 for routing electrical signals to and from the S / D regions 1620. The transistor 1640 may include additional features, such as device isolation regions, gate contacts, etc., not shown for clarity. The transistor 1640 is not limited to the type and configuration shown in FIG. 59 and can include various other types and configurations, such as planar transistors, non-planar transistors, or a combination of both. Planar transistors can include bipolar junction transistors (BJTs), heterojunction bipolar transistors (HBTs), or high electron mobility transistors (HEMTs). Non-planar transistors can include FinFET transistors, such as double-gate or tri-gate transistors, and wrap-around or all-around gate transistors, such as nanoribbon and nanowire transistors.

[0092] Each transistor 1640 may include a gate 1622 formed from at least two layers: a gate dielectric and a gate electrode. The gate dielectric may include one layer or a stack of layers. One or more layers may include silicon oxide, silicon dioxide, silicon carbide, and / or a high-k dielectric material. High-k dielectric materials may include elements such as hafnium, silicon, oxygen, titanium, tantalum, lanthanum, aluminum, zirconium, barium, strontium, yttrium, lead, scandium, niobium, and zinc. Examples of high-k materials that may be used for the gate dielectric include, but are not limited to, hafnium oxide, hafnium silicon oxide, lanthanum oxide, lanthanum aluminum oxide, zirconium oxide, zirconium silicon oxide, tantalum oxide, titanium oxide, barium strontium titanium oxide, barium titanium oxide, strontium titanium oxide, yttrium oxide, aluminum oxide, lead scandium tantalum oxide, and lead zinc niobate. In some embodiments, if a high-k material is used, an annealing process may be performed to improve the quality of the gate dielectric.

[0093] A gate electrode may be formed on the gate dielectric and may include at least one p-type work function metal or n-type work function metal, depending on whether transistor 1640 is a p-type metal oxide semiconductor (PMOS) transistor or an n-type metal oxide semiconductor (NMOS) transistor. In some implementations, the gate electrode may consist of a stack of two or more metal layers, with one or more metal layers being work function metal layers and at least one metal layer being a filler metal layer. Additional metal layers, such as barrier layers, may be included for other purposes. For PMOS transistors, metals that can be used for the gate electrode include, but are not limited to, ruthenium, palladium, platinum, cobalt, nickel, conductive metal oxides (e.g., ruthenium oxide), and any of the metals discussed below with reference to NMOS transistors (e.g., for work function tuning). For NMOS transistors, metals that can be used for the gate electrode include, but are not limited to, hafnium, zirconium, titanium, tantalum, aluminum, alloys of these metals, carbides of these metals (e.g., hafnium carbide, zirconium carbide, titanium carbide, tantalum carbide, and aluminum carbide), and any of the metals mentioned above with reference to PMOS transistors (e.g., for work function tuning).

[0094] In some embodiments, when viewed as a cross-section of transistor 1640 along the source-channel-drain direction, the gate electrode may comprise a U-shaped structure including a bottom portion substantially parallel to the surface of the substrate and two sidewall portions substantially perpendicular to the top surface of the substrate. In other embodiments, at least one of the metal layers forming the gate electrode may simply be a planar layer that is substantially parallel to the top surface of the substrate and does not include sidewall portions substantially perpendicular to the top surface of the substrate. In other embodiments, the gate electrode may comprise a combination of U-shaped and planar non-U-shaped structures. For example, the gate electrode may comprise one or more U-shaped layers formed on one or more planar non-U-shaped metal layers.

[0095] In some embodiments, a pair of sidewall spacers may be formed on opposing surfaces of the gate stack, sandwiching the gate stack. The sidewall spacers may be formed from materials such as silicon nitride, silicon oxide, silicon carbide, carbon-doped silicon nitride, and silicon oxynitride. Processes for forming sidewall spacers are well known in the art and generally include deposition and etching process steps. In some embodiments, multiple spacer pairs may be used, for example, two, three, or four pairs of sidewall spacers may be formed on opposing surfaces of the gate stack.

[0096] S / D regions 1620 may be formed in the substrate 1602 adjacent to the gate 1622 of each transistor 1640. The S / D regions 1620 may be formed using, for example, an implantation / diffusion process or an etching / deposition process. In the former process, dopants such as boron, aluminum, antimony, phosphorus, or arsenic may be ion-implanted into the substrate 1602 to form the S / D regions 1620. An annealing process to activate the dopants and diffuse them further into the substrate 1602 may follow the ion-implantation process. In the latter process, the substrate 1602 may first be etched to form recesses at the locations of the S / D regions 1620. An epitaxial deposition process may then be performed to fill the recesses with the material used to fabricate the S / D regions 1620. In some implementations, the S / D regions 1620 may be fabricated using a silicon alloy such as silicon germanium or silicon carbide. In some embodiments, the epitaxially deposited silicon alloy may be in-situ doped with dopants such as boron, arsenic, or phosphorus. In some embodiments, the S / D regions 1620 may be formed using one or more alternative semiconductor materials, such as germanium or a III-V material or alloy. In further embodiments, one or more layers of metal and / or metal alloy may be used to form the S / D regions 1620.

[0097] Electrical signals, such as power and / or input / output (I / O) signals, may be routed to and / or from devices (e.g., transistor 1640) in device layer 1604 through one or more interconnect layers (shown in FIG. 59 as interconnect layers 1606-1610) disposed on device layer 1604. For example, conductive features (e.g., gate 1622 and S / D contacts 1624) in device layer 1604 may be electrically coupled to interconnect structures 1628 in interconnect layers 1606-1610. One or more interconnect layers 1606-1610 may form a metallization stack (also referred to as an “ILD stack”) 1619 of IC device 1600. In some embodiments, IC device 1600 may be a “passive” device in that it does not include active components (e.g., transistors), while in other embodiments, die 1502 may be an “active” die in that it includes active components.

[0098] Interconnect structures 1628 may be arranged within interconnect layers 1606-1610 to route electrical signals according to various designs (notably, the arrangement is not limited to the particular configuration of interconnect structures 1628 shown in FIG. 59). Although a particular number of interconnect layers 1606-1610 are shown in FIG. 59, embodiments of the present disclosure include IC devices having more or fewer interconnect layers than those shown.

[0099] In some embodiments, the interconnect structures 1628 may include lines 1628a and / or vias 1628b filled with a conductive material, such as a metal. The lines 1628a may be arranged to route electrical signals in a plane substantially parallel to the surface of the substrate 1602 on which the device layer 1604 is formed. For example, the lines 1628a may route electrical signals in a direction into or out of the page from the perspective of FIG. 59. The vias 1628b may be arranged to route electrical signals in a plane substantially perpendicular to the surface of the substrate 1602 on which the device layer 1604 is formed. In some embodiments, the vias 1628b may electrically couple together the lines 1628a of different interconnect layers 1606-1610.

[0100] The interconnect layers 1606-1610 may include a dielectric material 1626 disposed between interconnect structures 1628, as shown in Figure 59. In some embodiments, the dielectric material 1626 disposed between the interconnect structures 1628 in different ones of the interconnect layers 1606-1610 may have different compositions, while in other embodiments, the composition of the dielectric material 1626 between different interconnect layers 1606-1610 may be the same.

[0101] A first interconnect layer 1606 may be formed over the device layer 1604. In some embodiments, the first interconnect layer 1606 may include lines 1628a and / or vias 1628b, as shown. The lines 1628a of the first interconnect layer 1606 may be coupled to contacts (e.g., S / D contacts 1624) of the device layer 1604.

[0102] A second interconnect layer 1608 may be formed over the first interconnect layer 1606. In some embodiments, the second interconnect layer 1608 may include vias 1628b to couple the lines 1628a of the second interconnect layer 1608 to the lines 1628a of the first interconnect layer 1606. Although the lines 1628a and the vias 1628b are structurally delineated within each interconnect layer (e.g., within the second interconnect layer 1608) for clarity, in some embodiments the lines 1628a and the vias 1628b may be structurally and / or materially continuous (e.g., may be filled simultaneously during a dual damascene process).

[0103] The third interconnect layer 1610 (and additional interconnect layers, if desired) may be formed successively on the second interconnect layer 1608 according to similar techniques and configurations described in connection with the second interconnect layer 1608 or the first interconnect layer 1606. In some embodiments, interconnect layers "higher" (i.e., further from the device layer 1604) in the metallization stack 1619 of the IC device 1600 may be thicker.

[0104] The IC device 1600 may include a surface insulating material 1634 (e.g., polyimide or a similar material) and one or more conductive contacts 1636 formed on the interconnect layers 1606-1610. In FIG. 59, the conductive contacts 1636 are shown in the form of bond pads. The conductive contacts 1636 may be electrically coupled to the interconnect structure 1628 and configured to route electrical signals from the transistor 1640 to other external devices. For example, solder bonds may be formed on the one or more conductive contacts 1636 to mechanically and / or electrically couple a chip including the IC device 1600 to another component (e.g., a circuit board). The IC device 1600 may include additional or alternative structures for routing electrical signals from the interconnect layers 1606-1610; for example, the conductive contacts 1636 may include other similar features (e.g., posts) that route electrical signals to external components.

[0105] 60 is a cross-sectional side view of an IC device assembly 1700 that can include one or more microelectronic structures 100 and / or microelectronic assemblies 150 according to any of the embodiments disclosed herein. The IC device assembly 1700 includes multiple components disposed on a circuit board 1702 (which may be, for example, a motherboard). The IC device assembly 1700 includes components disposed on a first side 1740 of the circuit board 1702 and an opposing second side 1742 of the circuit board 1702; generally, components may be disposed on one or both sides of 1740 and 1742. Any of the IC packages described below with reference to the IC device assembly 1700 may take the form of any of the embodiments of the microelectronic assemblies 150 described herein or may otherwise include any of the microelectronic structures 100 disclosed herein.

[0106] In some embodiments, circuit board 1702 may be a PCB including multiple metal layers separated from each other by layers of dielectric material and interconnected by conductive vias. Any one or more metal layers may be formed with a desired circuit pattern for routing electrical signals (optionally in combination with other metal layers) between components coupled to circuit board 1702. In other embodiments, circuit board 1702 may be a non-PCB substrate.

[0107] The IC device assembly 1700 shown in FIG. 60 includes a package-on-interposer structure 1736 coupled to a first surface 1740 of a circuit board 1702 by a coupling component 1716. The coupling component 1716 may electrically and mechanically couple the package-on-interposer structure 1736 to the circuit board 1702 and may include solder balls (as illustrated in FIG. 60), male and female portions of a socket, adhesive, underfill material, and / or any other suitable electrical and / or mechanical coupling structure.

[0108] The package-on-interposer structure 1736 may include an IC package 1720 coupled to a package interposer 1704 by a bonding component 1718. The bonding component 1718 may take any form suitable for the application, such as those described above with reference to the bonding component 1716. While a single IC package 1720 is shown in FIG. 60, multiple IC packages may be coupled to the package interposer 1704, or indeed additional interposers may be coupled to the package interposer 1704. The package interposer 1704 may provide an intervening substrate used to bridge the circuit board 1702 and the IC package 1720. The IC package 1720 may include, for example, a die (die 1502 in FIG. 58), an IC device (e.g., IC device 1600 in FIG. 59), or any other suitable component. In general, the package interposer 1704 may spread connections to a wider pitch or reroute connections to different connections. For example, package interposer 1704 may couple an IC package 1720 (e.g., a die) to a set of ball grid array (BGA) conductive contacts of coupling component 1716 for coupling the IC package 1720 (e.g., a die) to circuit board 1702. In the embodiment shown in Figure 60, IC package 1720 and circuit board 1702 are attached to opposite sides of package interposer 1704; in other embodiments, IC package 1720 and circuit board 1702 may be attached to the same side of package interposer 1704. In some embodiments, three or more components may be interconnected by package interposer 1704.

[0109] In some embodiments, the package interposer 1704 may be formed as a PCB including multiple metal layers separated from each other by layers of dielectric material and interconnected by conductive vias. In some embodiments, the package interposer 1704 may be formed of a polymeric material such as epoxy, glass-reinforced epoxy, epoxy with inorganic filler, ceramic material, or polyimide. In some embodiments, the package interposer 1704 may be formed of alternative rigid or flexible materials, including the same materials described above for use in semiconductor substrates, such as silicon, germanium, and other III-V and IV materials. The package interposer 1704 may include metal lines 1710 and vias 1708, including, but not limited to, through-silicon vias (TSVs) 1706. The package interposer 1704 may further include embedded devices 1714, including both passive and active devices. Such devices may include, but are not limited to, capacitors, decoupling capacitors, resistors, inductors, fuses, diodes, transformers, sensors, electrostatic discharge (ESD) devices, and memory devices. More complex devices, such as radio frequency devices, power amplifiers, power management devices, antennas, arrays, sensors, and microelectromechanical systems (MEMS) devices, may also be formed on the package interposer 1704. The package-on-interposer structure 1736 may take the form of any package-on-interposer structure known in the art. In some embodiments, the package interposer 1704 may include one or more microelectronic structures 100 and / or microelectronic assemblies 150.

[0110] IC device assembly 1700 may include an IC package 1724 coupled to a first surface 1740 of circuit board 1702 by a coupling component 1722. Coupling component 1722 may take the form of any of the embodiments described above with reference to coupling component 1716, and IC package 1724 may take the form of any of the embodiments described above with reference to IC package 1720.

[0111] 60 includes a package-on-package structure 1734 coupled to a second surface 1742 of a circuit board 1702 by a coupling component 1728. The package-on-package structure 1734 may include an IC package 1726 and an IC package 1732 coupled together by a coupling component 1730 such that the IC package 1726 is disposed between the circuit board 1702 and the IC package 1732. The coupling components 1728 and 1730 may take the form of any of the embodiments of the coupling component 1716 described above, and the IC packages 1726 and 1732 may take the form of any of the embodiments of the IC package 1720 described above. The package-on-package structure 1734 may be configured in accordance with any of the package-on-package structures known in the art.

[0112] FIG. 61 is a block diagram of an exemplary electrical device 1800 that may include one or more microelectronic structures 100 and / or microelectronic assemblies 150 according to any of the embodiments disclosed herein. For example, any suitable components of the electrical device 1800 may include one or more of the microelectronic structures 100, microelectronic assemblies 150, IC device assemblies 1700, IC devices 1600, or dies 1502 disclosed herein. While multiple components are shown in FIG. 61 as being included in the electrical device 1800, any one or more of these components may be omitted or duplicated as appropriate for the application. In some embodiments, some or all of the components included in the electrical device 1800 may be mounted on one or more motherboards. In some embodiments, some or all of these components are fabricated on a single system-on-chip (SoC) die.

[0113] 61 , but the electrical device 1800 may include interface circuitry for coupling to one or more components. For example, the electrical device 1800 may not include a display device 1806, but may include display device interface circuitry (e.g., connectors and driver circuits) to which the display device 1806 may be coupled. In another set of examples, the electrical device 1800 may not include an audio input device 1824 or an audio output device 1808, but may include audio input or output device interface circuitry (e.g., connectors and supporting circuits) to which the audio input device 1824 or the audio output device 1808 may be coupled.

[0114] The electrical device 1800 may include a processing device 1802 (e.g., one or more processing devices). As used herein, the term “processing device” or “processor” may refer to any device or portion of a device that processes electronic data from registers and / or memory and converts the electronic data into other electronic data that may be stored in registers and / or memory. The processing device 1802 may include one or more digital signal processors (DSPs), application specific integrated circuits (ASICs), central processing units (CPUs), graphics processing units (GPUs), cryptographic processors (specialized processors that execute cryptographic algorithms in hardware), server processors, or any other suitable processing devices. The electrical device 1800 may include memory 1804, which may itself include one or more memory devices, such as volatile memory (e.g., dynamic random access memory (DRAM)), non-volatile memory (e.g., read-only memory (ROM)), flash memory, solid-state memory, and / or a hard drive. In some embodiments, the memory 1804 may include memory that shares a die with the processing device 1802. This memory may be used as cache memory and may include embedded dynamic random access memory (eDRAM) or spin-transfer torque magnetic random access memory (STT-MRAM).

[0115] In some embodiments, electrical device 1800 may include a communications chip 1812 (e.g., one or more communications chips). For example, communications chip 1812 may be configured to manage wireless communications for data transfer to and from electrical device 1800. The term "wireless" and its derivatives may be used to describe circuits, devices, systems, methods, techniques, communications channels, etc. that can communicate data using modulated electromagnetic radiation over a non-solid medium. While some embodiments may not include wires, this term does not imply that the associated device may not include wires at all.

[0116] The communications chip 1812 may implement any of a number of wireless standards or protocols, including, but not limited to, Institute of Electrical and Electronics Engineers (IEEE) standards including Wi-Fi (IEEE 802.11 family), IEEE 802.16 standards (e.g., IEEE 802.16-2005 Amendment), the Long Term Evolution (LTE) project with any revisions, updates, and / or modifications (e.g., the advanced LTE project, the ultra mobile broadband (UMB) project (also known as "3GPP2"), etc.). IEEE 802.16-compatible broadband wide area (BWA) networks, commonly referred to as WiMAX networks, are an acronym for Worldwide Interoperability for Microwave Access and are a certification mark for products that have passed IEEE 802.16 standard conformance and interoperability testing. The communications chip 1812 may operate in accordance with Global System for Mobile Communications (GSM), General Packet Radio Service (GPRS), Universal Mobile Telecommunications System (UMTS), High Speed ​​Packet Access (HSPA), Evolved HSPA (E-HSPA), or LTE networks. The communications chip 1812 may operate in accordance with Enhanced Data for GSM Evolution (EDGE), GSM EDGE Radio Access Network (GERAN), Universal Terrestrial Radio Access Network (UTRAN), or Evolved UTRAN (E-UTRAN). The communications chip 1812 may operate in accordance with Code Division Multiple Access (CDMA), Time Division Multiple Access (TDMA), Digital Enhanced Cordless Communications (DECT), Evolution Data Optimized (EV-DO), and their derivatives, as well as any other wireless protocols designated for 3G, 4G, 5G, and beyond.The communications chip 1812 may operate in accordance with other wireless protocols in other embodiments. The electrical device 1800 may include an antenna 1822 for facilitating wireless communications and / or receiving other wireless communications (e.g., AM or FM radio transmissions).

[0117] In some embodiments, the communications chip 1812 may manage wired communications, such as electrical, optical, or any other suitable communications protocol (e.g., Ethernet). As described above, the communications chip 1812 may include multiple communications chips. For example, a first communications chip 1812 may be dedicated to short-range wireless communications, such as Wi-Fi or Bluetooth, and a second communications chip 1812 may be dedicated to long-range wireless communications, such as Global Positioning System (GPS), EDGE, GPRS, CDMA, WiMAX, LTE, or EV-DO. In some embodiments, the first communications chip 1812 may be dedicated to wireless communications, and the second communications chip 1812 may be dedicated to wired communications.

[0118] Electric device 1800 may include battery / power circuitry 1814. Battery / power circuitry 1814 may include one or more energy storage devices (e.g., batteries or capacitors) and / or circuitry for coupling coupling components of electric device 1800 to an energy source separate from electric device 1800 (e.g., AC line power).

[0119] Electrical device 1800 may include a display device 1806 (or corresponding interface circuitry, as described above). Display device 1806 may include any visual indicator, such as a heads-up display, a computer monitor, a projector, a touchscreen display, a liquid crystal display (LCD), a light-emitting diode display, or a flat panel display.

[0120] The electrical device 1800 may include an audio output device 1808 (or corresponding interface circuitry, as described above). The audio output device 1808 may include any device that generates an audible indicator, such as a speaker, a headset, or earphones.

[0121] The electrical device 1800 may include an audio input device 1824 (or corresponding interface circuitry, as described above). The audio input device 1824 may include any device that generates a signal representing sound, such as a microphone, a microphone array, or a digital musical instrument (e.g., an instrument with a Musical Instrument Digital Interface (MIDI) output).

[0122] Electrical device 1800 may include a GPS device 1818 (or corresponding interface circuitry, as described above), which can communicate with a satellite-based system and receive the location of electrical device 1800, as is known in the art.

[0123] Electrical device 1800 may also include other output devices 1810 (or corresponding interface circuitry, as described above). Examples of other output devices 1810 may include an audio codec, a video codec, a printer, a wired or wireless transmitter for providing information to other devices, or additional storage devices.

[0124] The electrical device 1800 may also include other input devices 1820 (or corresponding interface circuitry, as described above). Examples of the other input devices 1820 may include an accelerometer, a gyroscope, a compass, an image capture device, a keyboard, a cursor control device such as a mouse, a stylus, a touchpad, a barcode reader, a quick response (QR) code reader, any sensor, or a radio frequency identification (RFID) reader.

[0125] Electrical device 1800 may have any desired form factor, such as a handheld or mobile electrical device (e.g., a mobile phone, a smartphone, a mobile internet device, a music player, a tablet computer, a laptop computer, a netbook computer, an ultrabook computer, a personal digital assistant (PDA), an ultramobile personal computer, etc.), a desktop electrical device, a server device or other network computing component, a printer, a scanner, a monitor, a set-top box, an entertainment control unit, a vehicle control unit, a digital camera, a digital video recorder, or a wearable electrical device. In some embodiments, electrical device 1800 may be any other electronic device that processes data.

[0126] The following paragraphs provide various examples of the embodiments disclosed herein.

[0127] Example A1 is a microelectronic structure comprising: a substrate including a surface insulating material on a surface of the substrate; a cavity in the substrate, the cavity extending at least through the surface insulating material; and a bridge component in the cavity, the bridge component including a first surface and an opposing second surface, the second surface of the bridge component being between the first surface of the bridge component and the substrate, the bridge component including a conductive contact on the first surface of the bridge component.

[0128] Example A2 includes the subject matter of Example A1 and further specifies that the substrate comprises an organic dielectric material.

[0129] Example A3 includes the subject matter of any of Examples A1-2, and further specifies that the substrate includes a conductive contact on a surface of the substrate, the surface insulating material includes an opening, and the conductive contact of the substrate is below the opening.

[0130] Example A4 includes the subject matter of Example A3, and further includes solder on the conductive contacts of the substrate.

[0131] Example A5 includes the subject matter of any of Examples A3-4, and further specifies that the conductive contact of the substrate is a first conductive contact of the substrate, the surface of the substrate is a first surface of the substrate, the substrate further includes a second surface of the substrate opposite the first surface of the substrate, and the substrate further includes a second conductive contact on the second surface of the substrate.

[0132] Example A6 includes the subject matter of example A5, and further specifies that the second conductive contact is a second-level interconnect contact.

[0133] Example A7 includes the subject matter of any of Examples A1-6, and further specifies that the cavity is tapered, narrowing toward a bottom of the cavity.

[0134] Example A8 includes the subject matter of any of Examples A1-7, and further specifies that the dielectric material of the substrate is at the bottom of the cavity.

[0135] Example A9 includes the subject matter of Example A8 and further specifies that the bridge component is bonded to a dielectric material.

[0136] Example A10 includes the subject matter of Example A9 and further specifies that the bridge component is bonded to the dielectric material by an adhesive.

[0137] Example A11 includes the subject matter of any of Examples A8-10, further specifying that a bottom of the cavity is flush with a bottom of the substrate's conductive contact at the surface of the substrate.

[0138] Example A12 includes the subject matter of any of Examples A1-7, and further specifies that the metal is in the lower portion of the cavity.

[0139] Example A13 includes the subject matter of Example A12 and further specifies that the bottom of the metal is flush with the bottom of the surface insulating material.

[0140] Example A14 includes the subject matter of any of Examples A12-13, and further specifies that the metal extends onto the surface insulating material on the sides of the cavity.

[0141] Example A15 includes the subject matter of any of Examples A12-14, further specifying that the metal has a thickness at the surface of the substrate that is less than a thickness of the conductive contact of the substrate.

[0142] Example A16 includes the subject matter of Example A15 and further specifies that the metal thickness is less than 5 micrometers.

[0143] Example A17 includes the subject matter of any of Examples A12-13, further specifying that the top of the metal is flush with the top of the substrate's conductive contact at the surface of the substrate.

[0144] Example A18 includes the subject matter of Example A17 and further specifies that the metal thickness is greater than 5 micrometers.

[0145] Example A19 includes the subject matter of any of Examples A12-18, and further specifies that the bridge component is bonded to a metal.

[0146] Example A20 includes the subject matter of Example A19 and further specifies that the bridge component is bonded to the metal by an adhesive.

[0147] Example A21 includes the subject matter of Example A20, and further specifies that the adhesive comprises a snap-cure adhesive.

[0148] Example A22 includes the subject matter of any of Examples A12-21, and further specifies that the metals include nickel, palladium, and gold.

[0149] Example A23 includes the subject matter of any of Examples A12-21, and further specifies that the metal includes aluminum.

[0150] Example A24 includes the subject matter of any of Examples A12-21, and further specifies that the metal includes copper.

[0151] Example A25 includes the subject matter of any of Examples A1-24, and further specifies that the lower portion of the cavity has an undulating surface.

[0152] Example A26 includes the subject matter of Example A25 and further specifies that the undulations have an amplitude of 1 micrometer to 10 micrometers.

[0153] Example A27 includes any subject matter of Example A25, further specifying that the undulations have an amplitude of less than 1 micrometer.

[0154] Example A28 includes the subject matter of any of Examples A1-27, further specifying that the surface insulating material has a thickness of 10 micrometers to 30 micrometers.

[0155] Example A29 includes the subject matter of any of Examples A1-28, and further specifies that the bridge component includes a semiconductor material.

[0156] Example A30 includes the subject matter of any of Examples A1-29, and further specifies that the bridge component has a thickness of less than 100 micrometers.

[0157] Example A31 is a microelectronic assembly comprising: a substrate; a cavity in a side of the substrate; a bridge component in the cavity, the bridge component having a first side and an opposing second side, the second side of the bridge component being between the first side of the bridge component and the substrate, the bridge component including conductive contacts on the first side of the bridge component; and a microelectronic component having a first side and an opposing second side, the first side of the microelectronic component being between the second side of the microelectronic component and the substrate, the microelectronic component including conductive contacts on the first side of the microelectronic component, some of the conductive contacts of the microelectronic component being conductively coupled to the conductive contacts of the substrate on the side of the substrate, and some of the conductive contacts of the microelectronic component being conductively coupled to the conductive contacts of the substrate on the first side of the bridge component.

[0158] Example A32 includes the subject matter of Example A31 and further specifies that the substrate comprises an organic dielectric material.

[0159] Example A33 includes the subject matter of any of Examples A31-32, and further specifies that the substrate includes a surface insulating material on a surface of the substrate, the surface insulating material includes an opening, and the conductive contact of the substrate is at a bottom of the opening.

[0160] Example A34 includes the subject matter of Example A33, and further includes solder on the conductive contacts of the substrate.

[0161] Example A35 includes the subject matter of any of Examples A33-34, and further specifies that the conductive contact of the substrate is a first conductive contact of the substrate, the surface of the substrate is a first surface of the substrate, the substrate further includes a second surface of the substrate opposite the first surface of the substrate, and the substrate further includes a second conductive contact on the second surface of the substrate.

[0162] Example A36 includes the subject matter of example A35, and further specifies that the second conductive contact is a second-level interconnect contact.

[0163] Example A37 includes the subject matter of any of Examples A31-36, and further specifies that the cavity is tapered, narrowing toward a bottom of the cavity.

[0164] Example A38 includes the subject matter of any of Examples A31-37, and further specifies that the dielectric material of the substrate is at the bottom of the cavity.

[0165] Example A39 includes the subject matter of Example A38 and further specifies that the bridge component is bonded to a dielectric material.

[0166] Example A40 includes the subject matter of Example A39 and further specifies that the bridge component is bonded to the dielectric material by an adhesive.

[0167] Example A41 includes the subject matter of any of Examples A38-40, further specifying that a bottom of the cavity is flush with a bottom of the conductive contact of the substrate at the surface of the substrate.

[0168] Example A42 includes the subject matter of any of Examples A31-37, and further specifies that the metal is in the lower portion of the cavity.

[0169] Example A43 includes the subject matter of Example A42 and further specifies that the lower portion of the metal is flush with the lower portion of the surface insulating material at the surface of the substrate.

[0170] Example A44 includes the subject matter of any of Examples A42-43, and further specifies that the metal extends onto the surface insulating material on the side of the cavity.

[0171] Example A45 includes the subject matter of any of Examples A42-44, further specifying that the metal has a thickness at the surface of the substrate that is less than a thickness of the conductive contact of the substrate.

[0172] Example A46 includes the subject matter of Example A45 and further specifies that the metal thickness is less than 5 micrometers.

[0173] Example A47 includes the subject matter of any of Examples A42-43, further specifying that the top of the metal is flush with the top of the substrate's conductive contact at the surface of the substrate.

[0174] Example A48 includes the subject matter of Example A47 and further specifies that the metal thickness is greater than 5 micrometers.

[0175] Example A49 includes the subject matter of any of Examples A42-48, and further specifies that the bridge component is bonded to a metal.

[0176] Example A50 includes the subject matter of Example A49 and further specifies that the bridge component is bonded to the metal by an adhesive.

[0177] Example A51 includes the subject matter of Example A50, and further specifies that the adhesive comprises a snap-cure adhesive.

[0178] Example A52 includes the subject matter of any of Examples A42-51, and further specifies that the metals include nickel, palladium, and gold.

[0179] Example A53 includes the subject matter of any of Examples A42-51, and further specifies that the metal includes aluminum.

[0180] Example A54 includes the subject matter of any of Examples A42-51, and further specifies that the metal includes copper.

[0181] Example A55 includes the subject matter of any of Examples A31-54, and further specifies that the lower portion of the cavity has an undulating surface.

[0182] Example A56 includes the subject matter of Example A55 and further specifies that the undulations have an amplitude of 1 micrometer to 10 micrometers.

[0183] Example A57 includes the subject matter of Example A55, and further specifies that the undulations have an amplitude of less than 1 micrometer.

[0184] Example A58 includes the subject matter of any of Examples A31-57, further specifying that the surface insulating material on the surface of the substrate has a thickness of 10 micrometers to 30 micrometers.

[0185] Example A59 includes the subject matter of any of Examples A31-58, and further specifies that the bridge component includes a semiconductor material.

[0186] Example A60 includes the subject matter of any of Examples A31-59, and further specifies that the bridge component has a thickness of less than 100 micrometers.

[0187] Example A61 includes the subject matter of any of Examples A31-60, and further specifies that the pitch of the conductive contacts of the substrate is greater than the pitch of the conductive contacts of the bridge component.

[0188] Example A62 includes the subject matter of any of Examples A31-61, and further specifies that the microelectronic component is a first electronics component, and the microelectronic assembly further includes a second electronics component having a first side and an opposing second side, the first side of the second electronics component being between the second side of the second electronics component and the substrate, the second electronics component including conductive contacts on the first side of the second electronics component, some of the conductive contacts of the second electronics component being conductively coupled to the conductive contacts of the substrate at the side of the substrate, and some of the conductive contacts of the second electronics component being conductively coupled to the conductive contacts of the substrate at the first side of the bridge component.

[0189] Example A63 includes the subject matter of any of Examples A31-62, and further specifies that the microelectronic component includes a die.

[0190] Example A64 includes the subject matter of any of Examples A31-63, further including a filler compound between the microelectronic component and the substrate.

[0191] Example A65 includes the subject matter of Example A64 and further specifies that the fill compound extends between the microelectronic component and the bridge component.

[0192] Example A66 includes the subject matter of any of Examples A31-65, and further specifies that the microelectronic component includes a transistor.

[0193] Example A67 includes the subject matter of any of Examples A31-66, and further specifies that the microelectronic component includes a memory device.

[0194] Example A68 includes the subject matter of any of Examples A31-67, further specifying that the microelectronic assembly has a footprint of less than 100 square millimeters.

[0195] Example A69 includes the subject matter of any of Examples A31-68, and further specifies that the conductive contact of the substrate includes a surface finish, and that the surface finish includes nickel.

[0196] Example A70 includes the subject matter of Example A69 and further specifies that the facing further includes palladium and gold.

[0197] Example A71 is an electronic device comprising a circuit board and a microelectronic assembly conductively coupled to the circuit board, the microelectronic assembly including a substrate, a cavity in a surface of the substrate, a bridge component within the cavity, and a microelectronic component having a first surface and an opposing second surface, the first surface of the microelectronic component being between the second surface of the microelectronic component and the substrate, the microelectronic component including conductive contacts on the first surface of the microelectronic component, some of the conductive contacts of the microelectronic component being solder-bonded to the conductive contacts of the substrate, and some of the conductive contacts of the microelectronic component being solder-bonded to the conductive contacts of the bridge component.

[0198] Example A72 includes the subject matter of Example A71 and further specifies that the substrate comprises an organic dielectric material.

[0199] Example A73 includes the subject matter of any of Examples A71-72, further specifying that the substrate includes a surface insulating material on a surface of the substrate, the surface insulating material includes an opening, and the conductive contact of the substrate is at a bottom of the opening.

[0200] Example A74 includes the subject matter of Example A73, and further includes solder on the conductive contacts of the substrate.

[0201] Example A75 includes the subject matter of any of Examples A73-74, further specifying that the conductive contact of the substrate is a first conductive contact of the substrate, the surface of the substrate is a first surface of the substrate, the substrate further includes a second surface of the substrate opposite the first surface of the substrate, and the substrate further includes a second conductive contact on the second surface of the substrate.

[0202] Example A76 includes the subject matter of example A75, and further specifies that the second conductive contact is a second-level interconnect contact.

[0203] Example A77 includes the subject matter of any of Examples A71-76, and further specifies that the cavity is tapered, narrowing toward a bottom of the cavity.

[0204] Example A78 includes the subject matter of any of Examples A71-77, and further specifies that the dielectric material of the substrate is below the cavity.

[0205] Example A79 includes the subject matter of Example A78 and further specifies that the bridge component is bonded to a dielectric material.

[0206] Example A80 includes the subject matter of Example A79 and further specifies that the bridge component is bonded to the dielectric material by an adhesive.

[0207] Example A81 includes the subject matter of any of Examples A78-80, further specifying that a bottom of the cavity is flush with a bottom of the substrate's conductive contact at the surface of the substrate.

[0208] Example A82 includes the subject matter of any of Examples A71-77, and further specifies that the metal is in the lower portion of the cavity.

[0209] Example A83 includes the subject matter of Example A82 and further specifies that the lower portion of the metal is flush with the lower portion of the surface insulating material at the surface of the substrate.

[0210] Example A84 includes the subject matter of any of Examples A82-83, further specifying that the metal extends onto the surface insulating material on the sides of the cavity.

[0211] Example A85 includes the subject matter of any of Examples A82-84, further specifying that the metal has a thickness at the surface of the substrate that is less than a thickness of the conductive contact of the substrate.

[0212] Example A86 includes the subject matter of Example A85 and further specifies that the metal thickness is less than 5 micrometers.

[0213] Example A87 includes the subject matter of any of Examples A82-83, further specifying that the top of the metal is flush with the top of the substrate's conductive contact at the surface of the substrate.

[0214] Example A88 includes the subject matter of Example A87 and further specifies that the metal thickness is greater than 5 micrometers.

[0215] Example A89 includes the subject matter of any of Examples A82-88, and further specifies that the bridge component is bonded to a metal.

[0216] Example A90 includes the subject matter of Example A89 and further specifies that the bridge component is bonded to the metal by an adhesive.

[0217] Example A91 includes the subject matter of Example A90, and further specifies that the adhesive comprises a snap-cure adhesive.

[0218] Example A92 includes the subject matter of any of Examples A82-91, and further specifies that the metals include nickel, palladium, and gold.

[0219] Example A93 includes the subject matter of any of Examples A82-91, and further specifies that the metal includes aluminum.

[0220] Example A94 includes the subject matter of any of Examples A82-91, and further specifies that the metal includes copper.

[0221] Example A95 includes the subject matter of any of Examples A71-94, and further specifies that the lower portion of the cavity has an undulating surface.

[0222] Example A96 includes the subject matter of Example A95 and further specifies that the undulations have an amplitude of 1 micrometer to 10 micrometers.

[0223] Example A97 includes the subject matter of Example A95 and further specifies that the undulations have an amplitude of less than 1 micrometer.

[0224] Example A98 includes the subject matter of any of Examples A71-97, further specifying that the surface insulating material on the surface of the substrate has a thickness of 10 micrometers to 30 micrometers.

[0225] Example A99 includes the subject matter of any of Examples A71-98, and further specifies that the bridge component includes a semiconductor material.

[0226] Example A100 includes the subject matter of any of Examples A71-99, and further specifies that the bridge component has a thickness of less than 100 micrometers.

[0227] Example A101 includes the subject matter of any of Examples A71-100, and further specifies that the pitch of the conductive contacts of the substrate is greater than the pitch of the conductive contacts of the bridge component.

[0228] Example A102 includes the subject matter of any of Examples A71-101, and further specifies that the microelectronic component is a first electronics component, and the microelectronic assembly further includes a second electronics component having a first side and an opposing second side, the first side of the second electronics component being between the second side of the second electronics component and the substrate, the second electronics component including conductive contacts on the first side of the second electronics component, some of the conductive contacts of the second electronics component being conductively coupled to the conductive contacts of the substrate at the side of the substrate, and some of the conductive contacts of the second electronics component being conductively coupled to the conductive contacts of the substrate at the first side of the bridge component.

[0229] Example A103 includes the subject matter of any of Examples A71-102, and further specifies that the microelectronic component includes a die.

[0230] Example A104 includes the subject matter of any of Examples A71-103, further including a fill compound between the microelectronic component and the substrate.

[0231] Example A105 includes the subject matter of Example A104 and further specifies that the fill compound extends between the microelectronic component and the bridge component.

[0232] Example A106 includes the subject matter of any of Examples A71-105, and further specifies that the microelectronic component includes a transistor.

[0233] Example A107 includes the subject matter of any of Examples A71-106, and further specifies that the microelectronic component includes a memory device.

[0234] Example A108 includes the subject matter of any of Examples A71-107, and further specifies that the microelectronic assembly has a footprint of less than 100 square millimeters.

[0235] Example A109 includes the subject matter of any of Examples A71-108, and further specifies that the conductive contact of the substrate includes a surface finish, and that the surface finish includes nickel.

[0236] Example A110 includes the subject matter of Example A109 and further specifies that the facing further includes palladium and gold.

[0237] Example A111 includes the subject matter of any of examples A71-110, and further specifies that the electronics device is a handheld computing device, a laptop computing device, a wearable computing device, or a server computing device.

[0238] Example A112 includes the subject matter of any of Examples A71-111, and further specifies that the circuit board is a motherboard.

[0239] Example A113 includes the subject matter of any of Examples A71-112, further including a display communicatively coupled to the circuit board.

[0240] Example A114 includes the subject matter of example A113, and further specifies that the display includes a touchscreen display.

[0241] Example A115 includes the subject matter of any of Examples A71-114, further including a housing enclosing the circuit board and microelectronic assembly.

[0242] Example A116 is a method of manufacturing a microelectronic structure, including any method disclosed herein.

[0243] Example A117 is a method of manufacturing a microelectronic assembly, including any of the methods disclosed herein.

[0244] Example B1 is a microelectronic structure comprising: a substrate including a first layer, a final layer, and one or more internal layers between the first and final layers; a cavity in a surface of the substrate (the surface of the substrate is adjacent to the final layer, and the cavity extends through the final layer); metal in a lower portion of the cavity; and a bridge component in the cavity, the bridge component including a first surface and an opposing second surface, the second surface of the bridge component being between the first surface of the bridge component and the substrate, the bridge component including a conductive contact on the first surface of the bridge component.

[0245] Example B2 includes the subject matter of Example B1 and further specifies that the substrate comprises an organic dielectric material.

[0246] Example B3 includes the subject matter of any of Examples B1-B2, further specifying that the substrate includes a conductive contact on a surface of the substrate, the substrate includes a surface insulating material on the surface of the substrate, the surface insulating material includes an opening, and the conductive contact of the substrate is below the opening.

[0247] Example B4 includes the subject matter of Example B3, and further includes solder on the conductive contacts of the substrate.

[0248] Example B5 includes the subject matter of any of Examples B3-4, and further specifies that the conductive contact of the substrate is a first conductive contact of the substrate, the surface of the substrate is a first surface of the substrate, the substrate further includes a second surface of the substrate opposite the first surface of the substrate, and the substrate further includes a second conductive contact on the second surface of the substrate.

[0249] Example B6 includes the subject matter of example B5, and further specifies that the second conductive contact is a second-level interconnect contact.

[0250] Example B7 includes the subject matter of any of Examples B1-6, and further specifies that the cavity is tapered, narrowing toward a bottom of the cavity.

[0251] Example B8 includes the subject matter of any of Examples B1-7, further specifying that the metal at the bottom of the cavity is adjacent to a metal line in an internal metal layer of the substrate.

[0252] Example B9 includes the subject matter of Example B8, further specifying that the metal lines include copper.

[0253] Example B10 includes the subject matter of Example B9 and further specifies that the metal is a metal other than copper.

[0254] Example B11 includes the subject matter of any of Examples B8-10, further specifying that the metal has a thickness less than the thickness of the metal line.

[0255] Example B12 includes the subject matter of any of Examples B1-11, and further specifies that the metal extends onto the sides of the cavity.

[0256] Example B13 includes the subject matter of any of Examples B1-11, and further specifies that the metal does not extend onto the sides of the cavity.

[0257] Example B14 includes the subject matter of any of Examples B1-13, further specifying that the metal thickness is less than 1 micrometer.

[0258] Example B15 includes the subject matter of any of Examples B1-14, and further specifies that the bridge component is bonded to a metal.

[0259] Example B16 includes the subject matter of any of Examples B1-15, further including an adhesive between the bridge component and the metal.

[0260] Example B17 includes the subject matter of Example B16, and further specifies that the adhesive comprises a snap-cure adhesive.

[0261] Example B18 includes the subject matter of any of Examples B16-17, and further specifies that the adhesive includes a UV-curable adhesive.

[0262] Example B19 includes the subject matter of any of Examples B16-17, and further specifies that the adhesive includes a first adhesive region and a second adhesive region, and that the material composition of the first adhesive region is different from the material composition of the second adhesive region.

[0263] Example B20 includes the subject matter of Example B19, and further specifies that the first adhesive region is proximate an end of the bridge component and the second adhesive region is proximate an interior of the bridge component.

[0264] Example B21 includes the subject matter of any of Examples B19-20, and further specifies that the second adhesive region includes a heat-curing adhesive and the first adhesive region includes a snap-curing adhesive.

[0265] Example B22 includes the subject matter of any of Examples B16-21, and further specifies that the metal does not extend outside the area between the adhesive and the bottom of the cavity.

[0266] Example B23 includes the subject matter of any of Examples B1-22, further specifying that the metal includes aluminum.

[0267] Example B24 includes the subject matter of any of Examples B1-23, and further specifies that the metal includes gold.

[0268] Example B25 includes the subject matter of any of Examples B1-24, further specifying that the diameter of the opening of the cavity is more than 5 micrometers larger than the diameter of the bottom of the cavity.

[0269] Example B26 includes the subject matter of any of Examples B1-25, further specifying that the lower portion of the cavity has an undulating surface.

[0270] Example B27 includes the subject matter of Example B26, further specifying that the undulations have an amplitude of 1 micrometer to 10 micrometers.

[0271] Example B28 includes the subject matter of any of Examples B1-27, further specifying that the surface insulating material of the substrate has a thickness of 10 micrometers to 30 micrometers.

[0272] Example B29 includes the subject matter of any of Examples B1-28, further specifying that the bridge component includes a semiconductor material.

[0273] Example B30 includes the subject matter of any of Examples B1-29, further specifying that the bridge component has a thickness of less than 100 micrometers.

[0274] Example B31 is a microelectronic assembly comprising a substrate, a cavity in a surface of the substrate (the surface of the substrate is adjacent to a metallization layer of the substrate, and the cavity extends through the metallization layer), metal in a lower portion of the cavity, a bridge component in the cavity, the bridge component having a first surface and an opposing second surface, the second surface of the bridge component being between the first surface of the bridge component and the substrate, the bridge component including conductive contacts on the first surface of the bridge component, and a microelectronic component having a first surface and an opposing second surface, the first surface of the microelectronic component being between the second surface of the microelectronic component and the substrate, the microelectronic component including conductive contacts on the first surface of the microelectronic component, some of the conductive contacts of the microelectronic component being conductively coupled to the conductive contacts of the substrate at the surface of the substrate, and some of the conductive contacts of the microelectronic component being conductively coupled to the conductive contacts of the substrate at the first surface of the bridge component.

[0275] Example B32 includes the subject matter of Example B31, and further specifies that the substrate comprises an organic dielectric material.

[0276] Example B33 includes the subject matter of any of Examples B31-32, further specifying that the substrate includes a surface insulating material on a surface of the substrate, the surface insulating material includes an opening, and the conductive contact of the substrate is at a bottom of the opening.

[0277] Example B34 includes the subject matter of Example B33, further including solder on the conductive contacts of the substrate.

[0278] Example B35 includes the subject matter of any of Examples B33-34, further specifying that the conductive contact of the substrate is a first conductive contact of the substrate, the surface of the substrate is a first surface of the substrate, the substrate further includes a second surface of the substrate opposite the first surface of the substrate, and the substrate further includes a second conductive contact on the second surface of the substrate.

[0279] Example B36 includes the subject matter of example B35, and further specifies that the second conductive contact is a second-level interconnect contact.

[0280] Example B37 includes the subject matter of any of Examples B31-36, and further specifies that the cavity is tapered, narrowing toward a bottom of the cavity.

[0281] Example B38 includes the subject matter of any of Examples B31-37, further specifying that the metal at the bottom of the cavity is adjacent to a metal line in an internal metal layer of the substrate.

[0282] Example B39 includes the subject matter of Example B38, further specifying that the metal lines include copper.

[0283] Example B40 includes the subject matter of Example B39 and further specifies that the metal is different from copper.

[0284] Example B41 includes the subject matter of any of Examples B38-40, further specifying that the metal has a thickness less than the thickness of the metal line.

[0285] Example B42 includes the subject matter of any of Examples B31-41, and further specifies that the metal extends onto the sides of the cavity.

[0286] Example B43 includes the subject matter of any of Examples B31-41, and further specifies that the metal does not extend onto the sides of the cavity.

[0287] Example B44 includes the subject matter of any of Examples B31-43, further specifying that the metal thickness is less than 1 micrometer.

[0288] Example B45 includes the subject matter of any of Examples B31-44, and further specifies that the bridge component is bonded to a metal.

[0289] Example B46 includes the subject matter of any of Examples B31-45, further including an adhesive between the bridge component and the metal.

[0290] Example B47 includes the subject matter of Example B46, and further specifies that the adhesive comprises a snap-cure adhesive.

[0291] Example B48 includes the subject matter of any of Examples B46-47, and further specifies that the adhesive includes a UV-curable adhesive.

[0292] Example B49 includes the subject matter of any of Examples B46-47, and further specifies that the adhesive includes a first adhesive region and a second adhesive region, and the material composition of the first adhesive region is different from the material composition of the second adhesive region.

[0293] Example B50 includes the subject matter of example B49, and further specifies that the first adhesive region is proximate an end of the bridge component and the second adhesive region is proximate an interior of the bridge component.

[0294] Example B51 includes the subject matter of any of Examples B49-50, and further specifies that the second adhesive region includes a heat-cure adhesive and the first adhesive region includes a snap-cure adhesive.

[0295] Example B52 includes the subject matter of any of Examples B46-51, and further specifies that the metal does not extend outside the area between the adhesive and the bottom of the cavity.

[0296] Example B53 includes the subject matter of any of Examples B31-52, and further specifies that the metal includes aluminum.

[0297] Example B54 includes the subject matter of any of Examples B31-53, and further specifies that the metal includes gold.

[0298] Example B55 includes the subject matter of any of Examples B31-54, further specifying that the diameter of the opening of the cavity is more than 5 micrometers larger than the diameter of the bottom of the cavity.

[0299] Example B56 includes the subject matter of any of Examples B31-55, and further specifies that the lower portion of the cavity has an undulating surface.

[0300] Example B57 includes any subject matter of example B56, further specifying that the undulations have an amplitude of 1 micrometer to 10 micrometers.

[0301] Example B58 includes the subject matter of any of Examples B31-57, further specifying that the surface insulating material of the substrate has a thickness of 10 micrometers to 30 micrometers.

[0302] Example B59 includes the subject matter of any of Examples B31-58, further specifying that the bridge component includes a semiconductor material.

[0303] Example B60 includes the subject matter of any of Examples B31-59, further specifying that the bridge component has a thickness of less than 100 micrometers.

[0304] Example B61 includes the subject matter of any of Examples B31-60, further specifying that the pitch of the conductive contacts of the substrate is greater than the pitch of the conductive contacts of the bridge component.

[0305] Example B62 includes the subject matter of any of Examples B31-61, and further specifies that the microelectronic component is a first electronics component, and the microelectronic assembly further includes a second electronics component having a first surface and an opposing second surface, the first surface of the second electronics component being between the second surface of the second electronics component and the substrate, the second electronics component including conductive contacts on the first surface of the second electronics component, some of the conductive contacts of the second electronics component being conductively coupled to the conductive contacts of the substrate on the surface of the substrate, and some of the conductive contacts of the second electronics component being conductively coupled to the conductive contacts of the substrate on the first surface of the bridge component.

[0306] Example B63 includes the subject matter of any of Examples B31-62, and further specifies that the microelectronic component includes a die.

[0307] Example B64 includes the subject matter of any of Examples B31-63, further including a filler compound between the microelectronic component and the substrate.

[0308] Example B65 includes the subject matter of Example B64 and further specifies that the fill compound extends between the microelectronic component and the bridge component.

[0309] Example B66 includes the subject matter of any of Examples B31-65, and further specifies that the microelectronic component includes a transistor.

[0310] Example B67 includes the subject matter of any of Examples B31-66, and further specifies that the microelectronic component includes a memory device.

[0311] Example B68 includes the subject matter of any of Examples B31-67, further specifying that the microelectronic assembly has a footprint of less than 100 square millimeters.

[0312] Example B69 includes the subject matter of any of Examples B31-68, further specifying that the conductive contact of the substrate includes a surface finish, and that the surface finish includes nickel.

[0313] Example B70 includes the subject matter of Example B69 and further specifies that the facing further includes palladium and gold.

[0314] Example B71 is an electronic device comprising a circuit board and a microelectronic assembly conductively coupled to the circuit board, the microelectronic assembly including a substrate, a cavity in a surface of the substrate (the substrate includes a build-up material, and the cavity extends into the build-up material), metal in a lower part of the cavity, a bridge component in the cavity, and a microelectronic component having a first surface and an opposing second surface, the first surface of the microelectronic component being between the second surface of the microelectronic component and the substrate, the microelectronic component including conductive contacts on the first surface of the microelectronic component, some of the conductive contacts of the microelectronic component being solder-bonded to the conductive contacts of the substrate, and some of the conductive contacts of the microelectronic component being solder-bonded to the conductive contacts of the bridge component.

[0315] Example B72 includes the subject matter of Example B71, and further specifies that the substrate comprises an organic dielectric material.

[0316] Example B73 includes the subject matter of any of Examples B71-72, further specifying that the substrate includes a surface insulating material on a surface of the substrate, the surface insulating material includes an opening, and the conductive contact of the substrate is at a bottom of the opening.

[0317] Example B74 includes the subject matter of example B73, further including solder on the conductive contacts of the substrate.

[0318] Example B75 includes the subject matter of any of Examples B73-74, further specifying that the conductive contact of the substrate is a first conductive contact of the substrate, the surface of the substrate is a first surface of the substrate, the substrate further includes a second surface of the substrate opposite the first surface of the substrate, and the substrate further includes a second conductive contact on the second surface of the substrate.

[0319] Example B76 includes the subject matter of example B75, and further specifies that the second conductive contact is a second-level interconnect contact.

[0320] Example B77 includes the subject matter of any of Examples B71-76, and further specifies that the cavity is tapered, narrowing toward a bottom of the cavity.

[0321] Example B78 includes the subject matter of any of Examples B71-77, further specifying that the metal at the bottom of the cavity is adjacent to a metal line in an internal metal layer of the substrate.

[0322] Example B79 includes the subject matter of Example B78, further specifying that the metal lines include copper.

[0323] Example B80 includes the subject matter of Example B79 and further specifies that the metal is different from copper.

[0324] Example B81 includes the subject matter of any of Examples B78-80, further specifying that the metal has a thickness less than the thickness of the metal line.

[0325] Example B82 includes the subject matter of any of Examples B71-81, further specifying that the metal extends onto the sides of the cavity.

[0326] Example B83 includes the subject matter of any of Examples B71-81, and further specifies that the metal does not extend onto the sides of the cavity.

[0327] Example B84 includes the subject matter of any of Examples B71-83, further specifying that the metal thickness is less than 1 micrometer.

[0328] Example B85 includes the subject matter of any of Examples B71-84, further specifying that the bridge component is bonded to a metal.

[0329] Example B86 includes the subject matter of any of Examples B71-85, further including an adhesive between the bridge component and the metal.

[0330] Example B87 includes the subject matter of Example B86, and further specifies that the adhesive comprises a snap-cure adhesive.

[0331] Example B88 includes the subject matter of any of Examples B86-87, and further specifies that the adhesive includes a UV-curable adhesive.

[0332] Example B89 includes the subject matter of any of Examples B86-87, and further specifies that the adhesive includes a first adhesive region and a second adhesive region, and the material composition of the first adhesive region is different from the material composition of the second adhesive region.

[0333] Example B90 includes the subject matter of example B89, and further specifies that the first adhesive region is proximate an end of the bridge component and the second adhesive region is proximate an interior of the bridge component.

[0334] Example B91 includes the subject matter of any of Examples B89-90, and further specifies that the second adhesive region includes a heat-cure adhesive and the first adhesive region includes a snap-cure adhesive.

[0335] Example B92 includes the subject matter of any of Examples B86-91, and further specifies that the metal does not extend outside the area between the adhesive and the bottom of the cavity.

[0336] Example B93 includes the subject matter of any of Examples B71-92, and further specifies that the metal includes aluminum.

[0337] Example B94 includes the subject matter of any of Examples B71-93, and further specifies that the metal includes gold.

[0338] Example B95 includes the subject matter of any of Examples B71-94, further specifying that the diameter of the opening of the cavity is more than 5 micrometers larger than the diameter of the bottom of the cavity.

[0339] Example B96 includes the subject matter of any of Examples B71-95, further specifying that the lower portion of the cavity has an undulating surface.

[0340] Example B97 includes the subject matter of Example B96, further specifying that the undulations have an amplitude of 1 micrometer to 10 micrometers.

[0341] Example B98 includes the subject matter of any of Examples B71-97, further specifying that the surface insulating material of the substrate has a thickness of 10 micrometers to 30 micrometers.

[0342] Example B99 includes the subject matter of any of Examples B71-98, further specifying that the bridge component includes a semiconductor material.

[0343] Example B100 includes the subject matter of any of Examples B71-99, and further specifies that the bridge component has a thickness of less than 100 micrometers.

[0344] Example B101 includes the subject matter of any of Examples B71-100, and further specifies that the pitch of the conductive contacts of the substrate is greater than the pitch of the conductive contacts of the bridge component.

[0345] Example B102 includes the subject matter of any of Examples B71-101, and further specifies that the microelectronic component is a first electronics component, and the microelectronic assembly further includes a second electronics component having a first side and an opposing second side, the first side of the second electronics component being between the second side of the second electronics component and the substrate, the second electronics component including conductive contacts on the first side of the second electronics component, some of the conductive contacts of the second electronics component being conductively coupled to the conductive contacts of the substrate at the side of the substrate, and some of the conductive contacts of the second electronics component being conductively coupled to the conductive contacts of the substrate at the first side of the bridge component.

[0346] Example B103 includes the subject matter of any of Examples B71-102, and further specifies that the microelectronic component includes a die.

[0347] Example B104 includes the subject matter of any of Examples B71-103, further including a fill compound between the microelectronic component and the substrate.

[0348] Example B105 includes the subject matter of Example B104 and further specifies that the fill compound extends between the microelectronic component and the bridge component.

[0349] Example B106 includes the subject matter of any of Examples B71-105, and further specifies that the microelectronic component includes a transistor.

[0350] Example B107 includes the subject matter of any of Examples B71-106, and further specifies that the microelectronic component includes a memory device.

[0351] Example B108 includes the subject matter of any of Examples B71-107, further specifying that the microelectronic assembly has a footprint of less than 100 square millimeters.

[0352] Example B109 includes the subject matter of any of Examples B71-108, and further specifies that the conductive contact of the substrate includes a surface finish, and that the surface finish includes nickel.

[0353] Example B110 includes the subject matter of Example B109, and further specifies that the facing further includes palladium and gold.

[0354] Example B111 includes the subject matter of any of examples B71-110, and further specifies that the electronics device is a handheld computing device, a laptop computing device, a wearable computing device, or a server computing device.

[0355] Example B112 includes the subject matter of any of Examples B71-111, and further specifies that the circuit board is a motherboard.

[0356] Example B113 includes the subject matter of any of examples B71-112, further including a display communicatively coupled to the circuit board.

[0357] Example B114 includes any subject matter of example B113, and further specifies that the display includes a touchscreen display.

[0358] Example B115 includes the subject matter of any of Examples B71-114, further including a housing enclosing the circuit board and microelectronic assembly.

[0359] Example B116 is a bonding apparatus that includes a bond head and an ultraviolet (UV) light source.

[0360] Example B117 includes the subject matter of example B116 and further specifies that the UV light source is coupled to the bond head.

[0361] Example C1 is a microelectronic structure comprising a substrate, a cavity in a surface of the substrate, and a bridge component in the cavity, the bridge component having a first surface and an opposing second surface, the second surface of the bridge component being between the first surface of the bridge component and the substrate, the bridge component including a conductive contact on the first surface of the bridge component, the conductive contact on the surface of the substrate, and a material between the solder and the conductive contact.

[0362] Example C2 includes the subject matter of Example C1 and further specifies that the substrate includes an organic dielectric material.

[0363] Example C3 includes the subject matter of any of Examples C1-2, and further specifies that the material includes a metal.

[0364] Example C4 includes the subject matter of Example C3 and further specifies that the material includes metal balls.

[0365] Example C5 includes the subject matter of Example C4, and further specifies that the metal balls have a diameter of 10 micrometers to 500 micrometers.

[0366] Example C6 includes the subject matter of Example C3 and further specifies that the material includes metal pillars.

[0367] Example C7 includes the subject matter of Example C6, and further specifies that the metal pillars extend beyond the top surface of the surface insulating material of the substrate by a distance between 10 micrometers and 50 micrometers.

[0368] Example C8 includes the subject matter of any of Examples C6-7, and further specifies that the metal pillars include a bulk metal facing.

[0369] Example C9 includes the subject matter of Example C8 and further specifies that the bulk metal includes copper.

[0370] Example C10 includes the subject matter of any of Examples C8-9, and further specifies that the facing material includes nickel, palladium, or gold.

[0371] Example C11 includes the subject matter of any of Examples C8-10 and further specifies that the bulk metal is undercut relative to the facing.

[0372] Example C12 includes the subject matter of any of Examples C3-11, and further specifies that the metal includes copper.

[0373] Example C13 includes the subject matter of any of Examples C3-12, and further specifies that the metal includes nickel, palladium, or gold.

[0374] Example C14 includes the subject matter of any of Examples C1-2, and further specifies that the solder is a first solder, the material is a second solder, and the first solder has a different material composition than the second solder.

[0375] Example C15 includes the subject matter of Example C14 and further specifies that the second solder has a higher melting point than the first solder.

[0376] Example C16 includes the subject matter of any of Examples C14-15, further including a third solder between the second solder and the conductive contact, wherein the third solder has a different material composition than the second solder.

[0377] Example C17 includes the subject matter of Example C16 and further specifies that the second solder has a higher melting point than the third solder.

[0378] Example C18 includes the subject matter of any of Examples C1-17, further specifying that the conductive contact of the substrate is a first conductive contact of the substrate, the surface of the substrate is a first surface of the substrate, the substrate further includes a second surface of the substrate opposite the first surface of the substrate, and the substrate further includes a second conductive contact on the second surface of the substrate.

[0379] Example C19 includes the subject matter of example C18, and further specifies that the second conductive contact is a second-level interconnect contact.

[0380] Example C20 includes the subject matter of any of Examples C1-19, and further specifies that the cavity is tapered, narrowing toward a bottom of the cavity.

[0381] Example C21 includes the subject matter of any of Examples C1-20, and further specifies that the dielectric material of the substrate is at the bottom of the cavity.

[0382] Example C22 includes the subject matter of Example C21 and further specifies that the bridge component is bonded to a dielectric material.

[0383] Example C23 includes the subject matter of Example C22 and further specifies that the bridge component is bonded to the dielectric material by an adhesive.

[0384] Example C24 includes the subject matter of any of Examples C21-23, further specifying that the bottom of the cavity is flush with the bottom of the conductive contact.

[0385] Example C25 includes the subject matter of any of Examples C1-24, and further specifies that the lower portion of the cavity has an undulating surface.

[0386] Example C26 includes the subject matter of Example C25 and further specifies that the undulations have an amplitude of 1 micrometer to 10 micrometers.

[0387] Example C27 includes the subject matter of Example C25 and further specifies that the undulations have an amplitude of less than 1 micrometer.

[0388] Example C28 includes the subject matter of any of Examples C1-27, further specifying that the surface insulating material adjacent the conductive contact of the substrate has a thickness of 10 micrometers to 30 micrometers.

[0389] Example C29 includes the subject matter of any of Examples C1-28, further specifying that the bridge component includes a semiconductor material.

[0390] Example C30 includes the subject matter of any of Examples C1-29, further specifying that the bridge component has a thickness of less than 100 micrometers.

[0391] Example C31 is a microelectronic assembly including a substrate, a cavity in a surface of the substrate, and a bridge component in the cavity, the bridge component including a first surface and an opposing second surface, the second surface of the bridge component being between the first surface of the bridge component and the substrate, the bridge component including a conductive contact on the first surface of the bridge component; and a microelectronic component having a first surface and an opposing second surface, the first surface of the microelectronic component being between the second surface of the microelectronic component and the substrate, the microelectronic component including a conductive contact on the first surface of the microelectronic component, the conductive contacts of the microelectronic component being conductively coupled to the conductive contacts of the substrate at the surface of the substrate by an interconnect, and the conductive contacts of the microelectronic component being conductively coupled to the conductive contacts of the substrate at the first surface of the bridge component, wherein the interconnect includes solder and a material between the solder and the conductive contacts of the substrate, the material extending beyond a surface of a surface insulating material adjacent to the conductive contacts of the substrate.

[0392] Example C32 includes the subject matter of Example C31 and further specifies that the substrate comprises an organic dielectric material.

[0393] Example C33 includes the subject matter of any of Examples C31-32, and further specifies that the material includes a metal.

[0394] Example C34 includes the subject matter of Example C33 and further specifies that the material includes metal balls.

[0395] Example C35 includes the subject matter of Example C34 and further specifies that the metal balls have a diameter of 10 micrometers to 500 micrometers.

[0396] Example C36 includes the subject matter of Example C33 and further specifies that the material includes metal pillars.

[0397] Example C37 includes the subject matter of Example C36 and further specifies that the metal pillars extend beyond the top surface of the surface insulating material a distance of 10 micrometers to 50 micrometers.

[0398] Example C38 includes the subject matter of any of Examples C36-37, and further specifies that the metal pillars include a bulk metal facing.

[0399] Example C39 includes the subject matter of Example C38 and further specifies that the bulk metal includes copper.

[0400] Example C40 includes the subject matter of any of Examples C38-39, and further specifies that the facing material includes nickel, palladium, or gold.

[0401] Example C41 includes the subject matter of any of Examples C38-40 and further specifies that the bulk metal is undercut relative to the facing.

[0402] Example C42 includes the subject matter of any of Examples C33-41, and further specifies that the metal includes copper.

[0403] Example C43 includes the subject matter of any of Examples C33-42, and further specifies that the metal includes nickel, palladium, or gold.

[0404] Example C44 includes the subject matter of any of Examples C31-32, and further specifies that the solder is a first solder, the material is a second solder, and the first solder has a different material composition than the second solder.

[0405] Example C45 includes the subject matter of Example C44 and further specifies that the second solder has a higher melting point than the first solder.

[0406] Example C46 includes the subject matter of any of Examples C44-45, further including a third solder between the second solder and the conductive contact, wherein the third solder has a different material composition than the second solder.

[0407] Example C47 includes the subject matter of Example C46 and further specifies that the second solder has a higher melting point than the third solder.

[0408] Example C48 includes the subject matter of any of Examples C31-47, and further specifies that the conductive contact of the substrate is a first conductive contact of the substrate, the surface of the substrate is a first surface of the substrate, the substrate further includes a second surface of the substrate opposite the first surface of the substrate, and the substrate further includes a second conductive contact on the second surface of the substrate.

[0409] Example C49 includes the subject matter of example C48, and further specifies that the second conductive contact is a second-level interconnect contact.

[0410] Example C50 includes the subject matter of any of Examples C31-49, and further specifies that the cavity is tapered, narrowing toward a bottom of the cavity.

[0411] Example C51 includes the subject matter of any of Examples C31-C50, and further specifies that the dielectric material of the substrate is at the bottom of the cavity.

[0412] Example C52 includes the subject matter of Example C51 and further specifies that the bridge component is bonded to a dielectric material.

[0413] Example C53 includes the subject matter of Example C52 and further specifies that the bridge component is bonded to the dielectric material by an adhesive.

[0414] Example C54 includes the subject matter of any of Examples C51-C53, further specifying that the bottom of the cavity is flush with the bottom of the conductive contact.

[0415] Example C55 includes the subject matter of any of Examples C31-54, and further specifies that the lower portion of the cavity has an undulating surface.

[0416] Example C56 includes the subject matter of Example C55 and further specifies that the undulations have an amplitude of 1 micrometer to 10 micrometers.

[0417] Example C57 includes the subject matter of Example C55 and further specifies that the undulations have an amplitude of less than 1 micrometer.

[0418] Example C58 includes the subject matter of any of Examples C31-C57, further specifying that the surface insulating material on the surface of the substrate has a thickness of 10 micrometers to 30 micrometers.

[0419] Example C59 includes the subject matter of any of Examples C31-58, and further specifies that the bridge component includes a semiconductor material.

[0420] Example C60 includes the subject matter of any of Examples C31-59, further specifying that the bridge component has a thickness of less than 100 micrometers.

[0421] Example C61 includes the subject matter of any of Examples C31-C60, further specifying that the pitch of the conductive contacts of the substrate is greater than the pitch of the conductive contacts of the bridge component.

[0422] Example C62 includes the subject matter of any of Examples C31-61, further specifying that the microelectronic component is a first electronics component, and the microelectronic assembly further includes a second electronics component having a first surface and an opposing second surface, the first surface of the second electronics component being between the second surface of the second electronics component and the substrate, the second electronics component including conductive contacts on the first surface of the second electronics component, some of the conductive contacts of the second electronics component being conductively coupled to the conductive contacts of the substrate on the surface of the substrate, and some of the conductive contacts of the second electronics component being conductively coupled to the conductive contacts of the substrate on the first surface of the bridge component.

[0423] Example C63 includes the subject matter of any of Examples C31-C62, and further specifies that the microelectronic component includes a die.

[0424] Example C64 includes the subject matter of any of Examples C31-63, further including a filler compound between the microelectronic component and the substrate.

[0425] Example C65 includes the subject matter of Example C64 and further specifies that the fill compound extends between the microelectronic component and the bridge component.

[0426] Example C66 includes the subject matter of any of Examples C31-C65, and further specifies that the microelectronic component includes a transistor.

[0427] Example C67 includes the subject matter of any of Examples C31-C66, and further specifies that the microelectronic component includes a memory device.

[0428] Example C68 includes the subject matter of any of Examples C31-67, further specifying that the microelectronic assembly has a footprint of less than 100 square millimeters.

[0429] Example C69 includes the subject matter of any of Examples C31-68, and further specifies that the conductive contact of the substrate includes a surface finish, and that the surface finish includes nickel.

[0430] Example C70 includes the subject matter of Example C69 and further specifies that the facing further includes palladium and gold.

[0431] Example C71 is an electronic device comprising: a circuit board; a microelectronic assembly (the microelectronic assembly including a substrate) conductively coupled to the circuit board; a cavity in a surface of the substrate; a bridge component within the cavity; and a microelectronic component having a first surface and an opposing second surface, wherein the first surface of the microelectronic component is between the second surface of the microelectronic component and the substrate; the microelectronic component includes conductive contacts on the first surface of the microelectronic component; the conductive contacts of the microelectronic component are coupled to the conductive contacts of the substrate by interconnects; and the conductive contacts of the microelectronic component are coupled to the conductive contacts of the bridge component, wherein the conductive contacts of the substrate are at the bottom of openings in a surface insulating material; the interconnects include solder and a material, and the material fills a majority of the volume of the opening.

[0432] Example C72 includes the subject matter of Example C71 and further specifies that the substrate comprises an organic dielectric material.

[0433] Example C73 includes the subject matter of any of Examples C71-72, further specifying that the material includes a metal.

[0434] Example C74 includes the subject matter of Example C73 and further specifies that the material includes metal balls.

[0435] Example C75 includes the subject matter of Example C74, and further specifies that the metal balls have a diameter of 10 micrometers to 500 micrometers.

[0436] Example C76 includes the subject matter of Example C73 and further specifies that the material includes metal pillars.

[0437] Example C77 includes the subject matter of Example C76, and further specifies that the metal pillars extend beyond the top surface of the surface insulating material a distance of 10 micrometers to 50 micrometers.

[0438] Example C78 includes the subject matter of any of Examples C76-77, and further specifies that the metal pillars include a bulk metal facing.

[0439] Example C79 includes the subject matter of Example C78 and further specifies that the bulk metal includes copper.

[0440] Example C80 includes the subject matter of any of Examples C78-79, and further specifies that the facing material includes nickel, palladium, or gold.

[0441] Example C81 includes the subject matter of any of Examples C78-80 and further specifies that the bulk metal is undercut relative to the facing.

[0442] Example C82 includes the subject matter of any of Examples C73-81, and further specifies that the metal includes copper.

[0443] Example C83 includes the subject matter of any of Examples C73-82, and further specifies that the metal includes nickel, palladium, or gold.

[0444] Example C84 includes the subject matter of any of Examples C71-72, and further specifies that the solder is a first solder, the material is a second solder, and the first solder has a different material composition than the second solder.

[0445] Example C85 includes the subject matter of Example C84 and further specifies that the second solder has a higher melting point than the first solder.

[0446] Example C86 includes the subject matter of any of Examples C84-85, further including a third solder between the second solder and the conductive contact of the substrate, the third solder having a different material composition than the second solder.

[0447] Example C87 includes the subject matter of Example C86 and further specifies that the second solder has a higher melting point than the third solder.

[0448] Example C88 includes the subject matter of any of Examples C71-87, further specifying that the conductive contact of the substrate is a first conductive contact of the substrate, the surface of the substrate is a first surface of the substrate, the substrate further includes a second surface of the substrate opposite the first surface of the substrate, and the substrate further includes a second conductive contact on the second surface of the substrate.

[0449] Example C89 includes any subject matter of example C88, further specifying that the second conductive contact is a second-level interconnect contact.

[0450] Example C90 includes the subject matter of any of Examples C71-89, and further specifies that the cavity is tapered, narrowing toward the bottom of the cavity.

[0451] Example C91 includes the subject matter of any of Examples C71-90, and further specifies that the dielectric material of the substrate is in the lower portion of the cavity.

[0452] Example C92 includes the subject matter of Example C91 and further specifies that the bridge component is bonded to a dielectric material.

[0453] Example C93 includes the subject matter of Example C92 and further specifies that the bridge component is bonded to the dielectric material by an adhesive.

[0454] Example C94 includes the subject matter of any of Examples C91-93, further specifying that the bottom of the cavity is flush with the bottom of the conductive contact.

[0455] Example C95 includes the subject matter of any of Examples C71-94, and further specifies that the lower portion of the cavity has an undulating surface.

[0456] Example C96 includes the subject matter of Example C95 and further specifies that the undulations have an amplitude of 1 micrometer to 10 micrometers.

[0457] Example C97 includes the subject matter of Example C95 and further specifies that the undulations have an amplitude of less than 1 micrometer.

[0458] Example C98 includes the subject matter of any of Examples C71-97, further specifying that the surface insulating material on the surface of the substrate has a thickness of 10 micrometers to 30 micrometers.

[0459] Example C99 includes the subject matter of any of Examples C71-98, and further specifies that the bridge component includes a semiconductor material.

[0460] Example C100 includes the subject matter of any of Examples C71-99, further specifying that the bridge component has a thickness of less than 100 micrometers.

[0461] Example C101 includes the subject matter of any of Examples C71-100, further specifying that the pitch of the conductive contacts of the substrate is greater than the pitch of the conductive contacts of the bridge component.

[0462] Example C102 includes the subject matter of any of Examples C71-101, further specifying that the microelectronic component is a first electronics component, and the microelectronic assembly further includes a second electronics component having a first side and an opposing second side, the first side of the second electronics component being between the second side of the second electronics component and the substrate, the second electronics component including conductive contacts on the first side of the second electronics component, some of the conductive contacts of the second electronics component being conductively coupled to the conductive contacts of the substrate at the side of the substrate, and some of the conductive contacts of the second electronics component being conductively coupled to the conductive contacts of the substrate at the first side of the bridge component.

[0463] Example C103 includes the subject matter of any of Examples C71-102, and further specifies that the microelectronic component includes a die.

[0464] Example C104 includes the subject matter of any of Examples C71-103, further including a filler compound between the microelectronic component and the substrate.

[0465] Example C105 includes the subject matter of Example C104 and further specifies that the fill compound extends between the microelectronic component and the bridge component.

[0466] Example C106 includes the subject matter of any of Examples C71-105, and further specifies that the microelectronic component includes a transistor.

[0467] Example C107 includes the subject matter of any of Examples C71-106, and further specifies that the microelectronic component includes a memory device.

[0468] Example C108 includes the subject matter of any of Examples C71-107, further specifying that the microelectronic assembly has a footprint of less than 100 square millimeters.

[0469] Example C109 includes the subject matter of any of Examples C71-108, and further specifies that the conductive contact of the substrate includes a surface finish, and that the surface finish includes nickel.

[0470] Example C110 includes the subject matter of Example C109 and further specifies that the facing further includes palladium and gold.

[0471] Example C111 includes the subject matter of any of examples C71-110, and further specifies that the electronics device is a handheld computing device, a laptop computing device, a wearable computing device, or a server computing device.

[0472] Example C112 includes the subject matter of any of Examples C71-111, and further specifies that the circuit board is a motherboard.

[0473] Example C113 includes the subject matter of any of examples C71-112, further including a display communicatively coupled to the circuit board.

[0474] Example C114 includes the subject matter of example C113, and further specifies that the display includes a touchscreen display.

[0475] Example C115 includes the subject matter of any of Examples C71-114, further including a housing enclosing the circuit board and microelectronic assembly.

[0476] Example D1 is a microelectronic structure including a substrate, a cavity on a surface of the substrate, a first conductive contact on the substrate at a bottom of the cavity, a second conductive contact on the substrate outside the cavity, a first solder on the first conductive contact, and a second solder on the second conductive contact, wherein the first solder and the second solder have different material compositions.

[0477] Example D2 includes the subject matter of Example D1 and further specifies that the first solder and the second solder have different melting temperatures.

[0478] Example D3 includes the subject matter of any of Examples D1-2, and further specifies that the first solder has a higher melting point than the second solder.

[0479] Example D4 includes the subject matter of any of Examples D1-3, further including a bridge component within the cavity, the bridge component including a first surface and an opposing second surface, the second surface of the bridge component being between the first surface of the bridge component and the substrate, the bridge component including a first conductive contact on the first surface of the bridge component, the bridge component including a second conductive contact on the second surface of the bridge component, and the second conductive contact of the bridge component being coupled to the first conductive contact of the substrate by a first solder.

[0480] Example D5 includes the subject matter of any of Examples D1-4, and further specifies that the substrate comprises an organic dielectric material.

[0481] Example D6 includes the subject matter of any of Examples D1-D2, further specifying that the substrate includes a surface insulating material on a surface of the substrate, the surface insulating material includes an opening, and the second conductive contact of the substrate is at a bottom of the opening.

[0482] Example D7 includes the subject matter of any of Examples D3-4, and further specifies that the surface of the substrate is a first surface of the substrate, the substrate further includes a second surface of the substrate opposite the first surface of the substrate, and the substrate further includes a third conductive contact on the second surface of the substrate.

[0483] Example D8 includes the subject matter of example D7, and further specifies that the third conductive contact is a second-level interconnect contact.

[0484] Example D9 includes the subject matter of any of Examples D1-8, and further specifies that the cavity is tapered, narrowing toward a bottom of the cavity.

[0485] Example D10 includes the subject matter of any of Examples D1-9, and further specifies that the dielectric material of the substrate is in the lower portion of the cavity.

[0486] Example D11 includes the subject matter of any of Examples D1-10, and further specifies that the bridge component includes a semiconductor material.

[0487] Example D12 includes the subject matter of any of Examples D1-11, and further specifies that the bridge component has a thickness of less than 100 micrometers.

[0488] Example D13 is a microelectronic assembly including a substrate, a cavity in a side of the substrate, a first conductive contact of the substrate outside the cavity, and a bridge component within the cavity, the bridge component including a first side and an opposing second side, the second side of the bridge component being between the first side of the bridge component and the substrate, the bridge component including a second conductive contact on the first side of the bridge component; and a microelectronic component having a first side and an opposing second side, the first side of the microelectronic component being between the second side of the microelectronic component and the substrate, the microelectronic component including a conductive contact on the first side of the microelectronic component, the first conductive contact of the microelectronic component being conductively coupled to the first conductive contact of the substrate, and the second conductive contact of the microelectronic component being conductively coupled to the second conductive contact of the bridge component by an interconnect, wherein the interconnect includes a first solder material and a second solder material different from the first solder material.

[0489] Example D14 includes the subject matter of example D13, and further specifies that the first solder material is between the second solder material and the second conductive contact of the microelectronic component.

[0490] Example D15 includes the subject matter of any of Examples D13-14, and further specifies that the first solder material has a different melting point than the second solder material.

[0491] Example D16 includes the subject matter of any of Examples D13-14, and further specifies that the first solder material has a higher melting point than the second solder material.

[0492] Example D17 includes the subject matter of any of Examples D13-16, further specifying that the interconnect is a first interconnect, a first conductive contact of the microelectronic component is conductively coupled to the first conductive contact of the substrate by the second interconnect, and the second interconnect includes a third solder material and a fourth solder material different from the third solder material.

[0493] Example D18 includes the subject matter of example D17, and further specifies that a third solder material is between the fourth solder material and the first conductive contact of the microelectronic component.

[0494] Example D19 includes the subject matter of any of Examples D17-18, and further specifies that the third solder material has a different melting point than the fourth solder material.

[0495] Example D20 includes the subject matter of any of Examples D17-19, and further specifies that the third solder material has a higher melting point than the fourth solder material.

[0496] Example D21 includes the subject matter of any of Examples D17-20, and further specifies that the second interconnect further includes a fifth solder material different from the fourth solder material.

[0497] Example D22 includes the subject matter of example D21, and further specifies that the fourth solder material is between the fifth solder material and the third solder material.

[0498] Example D23 includes the subject matter of any of Examples D21-22, and further specifies that the fourth solder material has a different melting point than the fifth solder material.

[0499] Example D24 includes the subject matter of any of Examples D21-23, and further specifies that the fourth solder material has a lower melting point than the fifth solder material.

[0500] Example D25 includes the subject matter of any of Examples D21-24, and further specifies that the fifth solder material has the same material composition as the third solder material.

[0501] Example D26 includes the subject matter of any of Examples D21-25, and further specifies that the fifth solder material has the same material composition as the first solder material.

[0502] Example D27 includes the subject matter of any of Examples D17-26, and further specifies that the fourth solder material has the same material composition as the second solder material.

[0503] Example D28 includes the subject matter of any of Examples D17-27, and further specifies that the third solder material has the same material composition as the first solder material.

[0504] Example D29 includes the subject matter of any of Examples D13-16, further specifying that the interconnect is a first interconnect, a first conductive contact of the microelectronic component is conductively coupled to the first conductive contact of the substrate by a second interconnect, and the second interconnect comprises a third solder material.

[0505] Example D30 includes the subject matter of example D29 and further specifies that the third solder material has the same material composition as the first solder material.

[0506] Example D31 includes the subject matter of any of Examples D13-30, and further specifies that the substrate further includes a second conductive contact in the cavity, the bridge component includes a third conductive contact on a second surface of the bridge component, and the second conductive contact of the substrate is solder-bonded to the third conductive contact of the bridge component.

[0507] Example D32 includes the subject matter of Example D31 and further specifies that the solder has the same material composition as the first solder.

[0508] Example D33 includes the subject matter of any of Examples D13-32, and further specifies that the substrate includes an organic dielectric material.

[0509] Example D34 includes the subject matter of any of Examples D13-32, further specifying that the substrate includes a surface insulating material on a surface of the substrate, the surface insulating material includes an opening, and the first conductive contact of the substrate is at a bottom of the opening.

[0510] Example D35 includes the subject matter of any of Examples D13-34, and further specifies that the surface of the substrate is a first surface of the substrate, the substrate further includes a second surface of the substrate opposite the first surface of the substrate, and the substrate further includes a third conductive contact on the second surface of the substrate.

[0511] Example D36 includes the subject matter of example D35 and further specifies that the third conductive contact is a second-level interconnect contact.

[0512] Example D37 includes the subject matter of any of Examples D13-36, and further specifies that the cavity is tapered, narrowing toward the bottom of the cavity.

[0513] Example D38 includes the subject matter of any of Examples D13-37, and further specifies that the lower portion of the cavity has an undulating surface.

[0514] Example D39 includes the subject matter of Example D38 and further specifies that the undulations have an amplitude of 1 micrometer to 10 micrometers.

[0515] Example D40 includes the subject matter of Example D38 and further specifies that the undulations have an amplitude of less than 1 micrometer.

[0516] Example D41 includes the subject matter of any of Examples D13-40, further specifying that the surface insulating material on the surface of the substrate has a thickness of 10 micrometers to 30 micrometers.

[0517] Example D42 includes the subject matter of any of Examples D13-41, and further specifies that the bridge component includes a semiconductor material.

[0518] Example D43 includes the subject matter of any of Examples D13-42, and further specifies that the bridge component has a thickness of less than 100 micrometers.

[0519] Example D44 includes the subject matter of any of Examples D13-43, further specifying that the pitch of the conductive contacts of the substrate is greater than the pitch of the conductive contacts of the bridge component.

[0520] Example D45 includes the subject matter of any of Examples D13-44, further specifying that the first conductive contact of the microelectronic component has a different area than the second conductive contact of the microelectronic component.

[0521] Example D46 includes the subject matter of any of Examples D13-45, and further specifies that the microelectronic component is a first electronics component, and the microelectronic assembly further includes a second electronics component having a first surface and an opposing second surface, the first surface of the second electronics component being between the second surface of the second electronics component and the substrate, the second electronics component including conductive contacts on the first surface of the second electronics component, some of the conductive contacts of the second electronics component being conductively coupled to the conductive contacts of the substrate at the surface of the substrate, and some of the conductive contacts of the second electronics component being conductively coupled to the conductive contacts of the substrate at the first surface of the bridge component.

[0522] Example D47 includes the subject matter of any of Examples D13-46, and further specifies that the microelectronic component includes a die.

[0523] Example D48 includes the subject matter of any of Examples D13-47, further including a fill compound between the microelectronic component and the substrate.

[0524] Example D49 includes the subject matter of Example D48 and further specifies that the fill compound extends between the microelectronic component and the bridge component.

[0525] Example D50 includes the subject matter of any of Examples D13-49, and further specifies that the microelectronic component includes a transistor.

[0526] Example D51 includes the subject matter of any of Examples D13-50, and further specifies that the microelectronic component includes a memory device.

[0527] Example D52 includes the subject matter of any of Examples D13-51, further specifying that the microelectronic assembly has a footprint of less than 100 square millimeters.

[0528] Example D53 includes the subject matter of any of Examples D13-52, and further specifies that the conductive contact of the substrate includes a surface finish, and that the surface finish includes nickel.

[0529] Example D54 includes the subject matter of Example D53 and further specifies that the facing further includes palladium and gold.

[0530] Example D55 is an electronic device comprising: a circuit board; a microelectronic assembly (the microelectronic assembly including a substrate) conductively coupled to the circuit board; a cavity in a surface of the substrate; a bridge component within the cavity; and a microelectronic component having a first surface and an opposing second surface, wherein the first surface of the microelectronic component is between the second surface of the microelectronic component and the substrate, the microelectronic component including a conductive contact on the first surface of the microelectronic component, the first conductive contact of the microelectronic component being conductively coupled to the first conductive contact of the substrate, and the second conductive contact of the microelectronic component being conductively coupled to the second conductive contact of the bridge component by an interconnect, wherein the interconnect includes a first solder material and a second solder material different from the first solder material.

[0531] Example D56 includes the subject matter of example D55, and further specifies that the first solder material is between the second solder material and the second conductive contact of the microelectronic component.

[0532] Example D57 includes the subject matter of any of Examples D55-56, and further specifies that the first solder material has a different melting point than the second solder material.

[0533] Example D58 includes the subject matter of any of Examples D55-56, and further specifies that the first solder material has a higher melting point than the second solder material.

[0534] Example D59 includes the subject matter of any of Examples D55-58, further specifying that the interconnect is a first interconnect, a first conductive contact of the microelectronic component is conductively coupled to the first conductive contact of the substrate by the second interconnect, and the second interconnect includes a third solder material and a fourth solder material different from the third solder material.

[0535] Example D60 includes the subject matter of example D59, and further specifies that a third solder material is between the fourth solder material and the first conductive contact of the microelectronic component.

[0536] Example D61 includes the subject matter of any of Examples D59-60, and further specifies that the third solder material has a different melting point than the fourth solder material.

[0537] Example D62 includes the subject matter of any of Examples D59-61, and further specifies that the third solder material has a higher melting point than the fourth solder material.

[0538] Example D63 includes the subject matter of any of Examples D59-62, and further specifies that the second interconnect further includes a fifth solder material different from the fourth solder material.

[0539] Example D64 includes the subject matter of example D63, and further specifies that the fourth solder material is between the fifth solder material and the third solder material.

[0540] Example D65 includes the subject matter of any of Examples D63-64, and further specifies that the fourth solder material has a different melting point than the fifth solder material.

[0541] Example D66 includes the subject matter of any of Examples D63-65, and further specifies that the fourth solder material has a lower melting point than the fifth solder material.

[0542] Example D67 includes the subject matter of any of Examples D63-66, and further specifies that the fifth solder material has the same material composition as the third solder material.

[0543] Example D68 includes the subject matter of any of Examples D63-67, and further specifies that the fifth solder material has the same material composition as the first solder material.

[0544] Example D69 includes the subject matter of any of Examples D59-68, and further specifies that the fourth solder material has the same material composition as the second solder material.

[0545] Example D70 includes the subject matter of any of Examples D59-69, and further specifies that the third solder material has the same material composition as the first solder material.

[0546] Example D71 includes the subject matter of any of Examples D55-58, further specifying that the interconnect is a first interconnect, a first conductive contact of the microelectronic component is conductively coupled to the first conductive contact of the substrate by a second interconnect, and the second interconnect comprises a third solder material.

[0547] Example D72 includes the subject matter of Example D71 and further specifies that the third solder material has the same material composition as the first solder material.

[0548] Example D73 includes the subject matter of any of Examples D55-72, further specifying that the substrate further includes a second conductive contact in the cavity, the bridge component includes a third conductive contact on a second surface of the bridge component, and the second conductive contact of the substrate is solder-bonded to the third conductive contact of the bridge component.

[0549] Example D74 includes any of the subject matter of Example D73, further specifying that the solder has the same material composition as the first solder.

[0550] Example D75 includes the subject matter of any of Examples D55-74, and further specifies that the substrate includes an organic dielectric material.

[0551] Example D76 includes the subject matter of any of Examples D55-75, further specifying that the substrate includes a surface insulating material on a surface of the substrate, the surface insulating material includes an opening, and the conductive contact of the substrate is at a bottom of the opening.

[0552] Example D77 includes the subject matter of any of Examples D55-76, and further specifies that the surface of the substrate is a first surface of the substrate, the substrate further includes a second surface of the substrate opposite the first surface of the substrate, and the substrate further includes a third conductive contact on the second surface of the substrate.

[0553] Example D78 includes the subject matter of example D77, and further specifies that the third conductive contact is a second-level interconnect contact.

[0554] Example D79 includes the subject matter of any of Examples D55-78, further specifying that the first conductive contact of the microelectronic component has a different area than the second conductive contact of the microelectronic component.

[0555] Example D80 includes the subject matter of any of Examples D55-79, further specifying that the first conductive contact of the microelectronic component has a larger area than the second conductive contact of the microelectronic component.

[0556] Example D81 includes the subject matter of any of Examples D55-80, and further specifies that the cavity is tapered, narrowing toward the bottom of the cavity.

[0557] Example D82 includes the subject matter of any of Examples D55-81, and further specifies that the lower portion of the cavity has an undulating surface.

[0558] Example D83 includes the subject matter of Example D82 and further specifies that the undulations have an amplitude of 1 micrometer to 10 micrometers.

[0559] Example D84 includes the subject matter of Example D82 and further specifies that the undulations have an amplitude of less than 1 micrometer.

[0560] Example D85 includes the subject matter of any of Examples D55-84, further specifying that the surface insulating material on the surface of the substrate has a thickness of 10 micrometers to 30 micrometers.

[0561] Example D86 includes the subject matter of any of Examples D55-85, and further specifies that the bridge component includes a semiconductor material.

[0562] Example D87 includes the subject matter of any of Examples D55-86, further specifying that the bridge component has a thickness of less than 100 micrometers.

[0563] Example D88 includes the subject matter of any of Examples D55-87, further specifying that the pitch of the conductive contacts of the substrate is greater than the pitch of the conductive contacts of the bridge component.

[0564] Example D89 includes the subject matter of any of Examples D55-88, and further specifies that the microelectronic component is a first electronics component, and the microelectronic assembly further includes a second electronics component having a first surface and an opposing second surface, the first surface of the second electronics component being between the second surface of the second electronics component and the substrate, the second electronics component including conductive contacts on the first surface of the second electronics component, some of the conductive contacts of the second electronics component being conductively coupled to the conductive contacts of the substrate at the surface of the substrate, and some of the conductive contacts of the second electronics component being conductively coupled to the conductive contacts of the substrate at the first surface of the bridge component.

[0565] Example D90 includes the subject matter of any of Examples D55-89, and further specifies that the microelectronic component includes a die.

[0566] Example D91 includes the subject matter of any of Examples D55-90, further including a filler compound between the microelectronic component and the substrate.

[0567] Example D92 includes the subject matter of Example D91 and further specifies that the fill compound extends between the microelectronic component and the bridge component.

[0568] Example D93 includes the subject matter of any of Examples D55-92, and further specifies that the microelectronic component includes a transistor.

[0569] Example D94 includes the subject matter of any of Examples D55-93, and further specifies that the microelectronic component includes a memory device.

[0570] Example D95 includes the subject matter of any of Examples D55-94, further specifying that the microelectronic assembly has a footprint of less than 100 square millimeters.

[0571] Example D96 includes the subject matter of any of Examples D55-95, and further specifies that the conductive contact of the substrate includes a surface finish, and that the surface finish includes nickel.

[0572] Example D97 includes the subject matter of Example D96 and further specifies that the facing further includes palladium and gold.

[0573] Example D98 includes the subject matter of any of Examples D55-97, and further specifies that the electronics device is a handheld computing device, a laptop computing device, a wearable computing device, or a server computing device.

[0574] Example D99 includes the subject matter of any of Examples D55-98, and further specifies that the circuit board is a motherboard.

[0575] Example D100 includes the subject matter of any of examples D55-99, further including a display communicatively coupled to the circuit board.

[0576] Example D101 includes the subject matter of example D100, and further specifies that the display includes a touchscreen display.

[0577] Example D102 includes the subject matter of any of Examples D55-101, further including a housing enclosing the circuit board and the microelectronic assembly.

[0578] Example E1 is a microelectronic structure including a substrate, a cavity in a surface of the substrate, a first conductive contact in the cavity, and a bridge component in the cavity, the bridge component including a first surface and an opposing second surface, the second surface of the bridge component being between the first surface of the bridge component and the substrate, the bridge component including a second conductive contact on the second surface of the bridge component, the first conductive contact being electrically coupled to the second conductive contact, and the first conductive contact in the cavity having a non-planar contact surface.

[0579] Example E2 includes the subject matter of Example E1 and further specifies that the substrate comprises an organic dielectric material.

[0580] Example E3 includes the subject matter of any of Examples E1-2, further specifying that the substrate includes a third conductive contact on a surface of the substrate outside the cavity, the substrate includes a surface insulating material on the surface of the substrate, the surface insulating material includes an opening, and the third conductive contact of the substrate is below the opening.

[0581] Example E4 includes the subject matter of example E3, further including solder on the third conductive contact of the substrate.

[0582] Example E5 includes the subject matter of any of Examples E3-4, and further specifies that the surface of the substrate is a first surface of the substrate, the substrate further includes a second surface of the substrate opposite the first surface of the substrate, and the substrate further includes a third conductive contact on the second surface of the substrate.

[0583] Example E6 includes the subject matter of example E5, and further specifies that the third conductive contact is a second-level interconnect contact.

[0584] Example E7 includes the subject matter of any of Examples E1-6, further specifying that the cavity is tapered, narrowing toward a bottom of the cavity.

[0585] Example E8 includes the subject matter of any of Examples E1-7, further specifying that the first conductive contact comprises a wire.

[0586] Example E9 includes the subject matter of example E8, and further specifies that the wire comprises copper, silver, or gold.

[0587] Example E10 includes the subject matter of any of Examples E1-9, further specifying that the contact surface includes a pointed shape.

[0588] Example E11 includes the subject matter of any of Examples E1-9, and further specifies that the contact surface has an arc shape.

[0589] Example E12 includes any subject matter of example E11, and further specifies that the first conductive contact includes a plurality of wire domes.

[0590] Example E13 includes the subject matter of any of Examples E1-9, further specifying that the first conductive contact comprises a cantilever.

[0591] Example E14 includes the subject matter of any of Examples E1-13, further specifying that the first conductive contact comprises a wire wirebonded to metal of the metal layer of the substrate.

[0592] Example E15 includes the subject matter of any of Examples E1-14, further specifying that the substrate includes a surface insulating material on a surface of the substrate, and the cavity extends through at least the surface insulating material.

[0593] Example E16 includes the subject matter of example E15 and further specifies that the cavity extends beyond the surface insulating material into the dielectric material of the substrate.

[0594] Example E17 includes the subject matter of any of Examples E15-16, further specifying that the first conductive contact does not extend beyond the plane of the lower surface of the surface insulating material.

[0595] Example E18 includes the subject matter of any of Examples E1-17, further specifying that the first conductive contact is electrically coupled to the second conductive contact with solder.

[0596] Example E19 includes the subject matter of any of Examples E1-18, further specifying that the first conductive contact is one of a plurality of first conductive contacts in a cavity in the substrate, and the plurality of first conductive contacts have a non-planar contact surface.

[0597] Example E20 includes the subject matter of any of Examples E1-19, further including an underfill material between the second surface of the bridge component and the substrate.

[0598] Example E21 includes the subject matter of example E20, and further specifies that the first conductive contact includes a wire, and the underfill material surrounds the wire.

[0599] Example E22 includes the subject matter of any of Examples E1-21, further specifying that the bridge component includes a conductive path between the second conductive contact of the bridge component and the conductive contact on the first surface of the bridge component.

[0600] Example E23 includes the subject matter of any of Examples E1-22, further specifying that the bridge component does not contact the dielectric material of the substrate.

[0601] Example E24 includes the subject matter of any of Examples E1-23, and further specifies that the bridge component includes a transistor.

[0602] Example E25 includes the subject matter of any of Examples E1-24, further specifying that the lower portion of the cavity has an undulating surface.

[0603] Example E26 includes the subject matter of example E25, further specifying that the undulations have an amplitude of 1 micrometer to 10 micrometers.

[0604] Example E27 includes the subject matter of Example E25, further specifying that the undulations have an amplitude of less than 1 micrometer.

[0605] Example E28 includes the subject matter of any of Examples E1-27, further specifying that the surface insulating material has a thickness between 10 micrometers and 30 micrometers.

[0606] Example E29 includes the subject matter of any of Examples E1-28, further specifying that the bridge component comprises a semiconductor material.

[0607] Example E30 includes the subject matter of any of Examples E1-29, further specifying that the bridge component has a thickness of less than 100 micrometers.

[0608] Example E31 is a microelectronic assembly comprising: a substrate; a cavity on a side of the substrate; a first conductive contact in the cavity (the first conductive contact is a non-planar contact surface); a bridge component in the cavity, the bridge component having a first surface and an opposing second surface, the second surface of the bridge component being between the first surface of the bridge component and the substrate, the bridge component including a second conductive contact on the first surface of the bridge component; and a microelectronic component having a first surface and an opposing second surface, the first surface of the microelectronic component being between the second surface of the microelectronic component and the substrate, the microelectronic component including conductive contacts on the first surface of the microelectronic component, some of the conductive contacts of the microelectronic component being conductively coupled to the conductive contacts of the substrate on the side of the substrate, and some of the conductive contacts of the microelectronic component being conductively coupled to the conductive contacts of the substrate on the first surface of the bridge component.

[0609] Example E32 includes the subject matter of Example E31 and further specifies that the substrate comprises an organic dielectric material.

[0610] Example E33 includes the subject matter of any of Examples E31-32, further specifying that the substrate includes a third conductive contact on a surface of the substrate outside the cavity, the substrate includes a surface insulating material on the surface of the substrate, the surface insulating material includes an opening, and the third conductive contact of the substrate is below the opening.

[0611] Example E34 includes the subject matter of example E33, and further includes solder on the third conductive contact of the substrate.

[0612] Example E35 includes the subject matter of any of Examples E33-34, further specifying that the surface of the substrate is a first surface of the substrate, the substrate further includes a second surface of the substrate opposite the first surface of the substrate, and the substrate further includes a third conductive contact on the second surface of the substrate.

[0613] Example E36 includes the subject matter of example E35, and further specifies that the third conductive contact is a second-level interconnect contact.

[0614] Example E37 includes the subject matter of any of Examples E31-E36, and further specifies that the cavity is tapered, narrowing toward a bottom of the cavity.

[0615] Example E38 includes the subject matter of any of Examples E31-E37, further specifying that the first conductive contact comprises a wire.

[0616] Example E39 includes the subject matter of example E38, and further specifies that the wire comprises copper, silver, or gold.

[0617] Example E40 includes the subject matter of any of Examples E31-E39, and further specifies that the first conductive contact has a point that extends toward the second conductive contact.

[0618] Example E41 includes the subject matter of any of Examples E31-E39, and further specifies that the first conductive contact has an arc extending toward the second conductive contact.

[0619] Example E42 includes the subject matter of example E41, and further specifies that the first conductive contact includes a plurality of wire domes.

[0620] Example E43 includes the subject matter of any of Examples E31-E39, and further specifies that the first conductive contact includes a cantilever.

[0621] Example E44 includes the subject matter of any of Examples E31-E43, further specifying that the first conductive contact includes a wire wirebonded to metal of the metal layer of the substrate.

[0622] Example E45 includes the subject matter of any of Examples E31-E44, and further specifies that the substrate includes a surface insulating material on a surface of the substrate, and the cavity extends through at least the surface insulating material.

[0623] Example E46 includes the subject matter of example E45 and further specifies that the cavity extends beyond the surface insulating material into the dielectric material of the substrate.

[0624] Example E47 includes the subject matter of any of Examples E45-46, further specifying that the first conductive contact does not extend beyond the plane of the lower surface of the surface insulating material.

[0625] Example E48 includes the subject matter of any of Examples E31-E47, further specifying that the first conductive contact is electrically coupled to the second conductive contact with solder.

[0626] Example E49 includes the subject matter of any of Examples E31-48, further specifying that the first conductive contact is one of a plurality of first conductive contacts in a cavity in the substrate, and the plurality of first conductive contacts have a non-planar contact surface.

[0627] Example E50 includes the subject matter of any of Examples E31-E49, further including an underfill material between the second surface of the bridge component and the substrate.

[0628] Example E51 includes the subject matter of example E50, and further specifies that the first conductive contact includes a wire, and the underfill material surrounds the wire.

[0629] Example E52 includes the subject matter of any of Examples E31-51, further specifying that the bridge component includes a conductive path between the second conductive contact of the bridge component and the conductive contact on the first surface of the bridge component.

[0630] Example E53 includes the subject matter of any of Examples E31-E52, and further specifies that the bridge component does not contact the dielectric material of the substrate.

[0631] Example E54 includes the subject matter of any of Examples E31-E53, and further specifies that the bridge component includes a transistor.

[0632] Example E55 includes the subject matter of any of Examples E31-E54, and further specifies that the lower portion of the cavity has an undulating surface.

[0633] Example E56 includes the subject matter of example E55, further specifying that the undulations have an amplitude of 1 micrometer to 10 micrometers.

[0634] Example E57 includes the subject matter of Example E55, further specifying that the undulations have an amplitude of less than 1 micrometer.

[0635] Example E58 includes the subject matter of any of Examples E31-E57, further specifying that the surface insulating material on the surface of the substrate has a thickness of 10 micrometers to 30 micrometers.

[0636] Example E59 includes the subject matter of any of Examples E31-E58, further specifying that the bridge component comprises a semiconductor material.

[0637] Example E60 includes the subject matter of any of Examples E31-E59, further specifying that the bridge component has a thickness of less than 100 micrometers.

[0638] Example E61 includes the subject matter of any of Examples E31-E60, further specifying that the pitch of the conductive contacts of the substrate is greater than the pitch of the conductive contacts of the bridge component.

[0639] Example E62 includes the subject matter of any of Examples E31-61, further specifying that the microelectronic component is a first electronics component, and the microelectronic assembly further includes a second electronics component having a first surface and an opposing second surface, the first surface of the second electronics component being between the second surface of the second electronics component and the substrate, the second electronics component including conductive contacts on the first surface of the second electronics component, a portion of the conductive contacts of the second electronics component being conductively coupled to the conductive contacts of the substrate at the surface of the substrate, and a portion of the conductive contacts of the second electronics component being conductively coupled to the conductive contacts of the substrate at the first surface of the bridge component.

[0640] Example E63 includes the subject matter of any of Examples E31-E62, and further specifies that the microelectronic component includes a die.

[0641] Example E64 includes the subject matter of any of Examples E31-E63, further including a filler compound between the microelectronic component and the substrate.

[0642] Example E65 includes the subject matter of Example E64 and further specifies that the fill compound extends between the microelectronic component and the bridge component.

[0643] Example E66 includes the subject matter of any of Examples E31-E65, and further specifies that the microelectronic component includes a transistor.

[0644] Example E67 includes the subject matter of any of Examples E31-E66, and further specifies that the microelectronic component includes a memory device.

[0645] Example E68 includes the subject matter of any of Examples E31-E67, further specifying that the microelectronic assembly has a footprint of less than 100 square millimeters.

[0646] Example E69 includes the subject matter of any of Examples E31-E68, further specifying that the conductive contact of the substrate includes a surface finish, and that the surface finish includes nickel.

[0647] Example E70 includes the subject matter of Example E69 and further specifies that the facing further includes palladium and gold.

[0648] Example E71 is an electronic device comprising: a circuit board; a microelectronic assembly (the microelectronic assembly includes a substrate) conductively coupled to the circuit board; a cavity on a surface of the substrate; a first conductive contact in the cavity; a bridge component in the cavity, the bridge component including a second conductive contact facing the first conductive contact and coupled to the first conductive contact, the first conductive contact having a surface facing the bridge component, the surface being uneven; and a microelectronic component having a first surface and an opposing second surface, the first surface of the microelectronic component being between the second surface of the microelectronic component and the substrate, the microelectronic component including conductive contacts on the first surface of the microelectronic component, some of the conductive contacts of the microelectronic component being solder-bonded to the conductive contacts of the substrate, and some of the conductive contacts of the microelectronic component being solder-bonded to the conductive contacts of the bridge component.

[0649] Example E72 includes the subject matter of Example E71 and further specifies that the substrate comprises an organic dielectric material.

[0650] Example E73 includes the subject matter of any of Examples E71-72, further specifying that the substrate includes a third conductive contact on a surface of the substrate outside the cavity, the substrate includes a surface insulating material on the surface of the substrate, the surface insulating material includes an opening, and the third conductive contact of the substrate is below the opening.

[0651] Example E74 includes the subject matter of example E73, and further includes solder on the third conductive contact of the substrate.

[0652] Example E75 includes the subject matter of any of Examples E73-74, further specifying that the surface of the substrate is a first surface of the substrate, the substrate further includes a second surface of the substrate opposite the first surface of the substrate, and the substrate further includes a third conductive contact on the second surface of the substrate.

[0653] Example E76 includes the subject matter of example E75, and further specifies that the third conductive contact is a second-level interconnect contact.

[0654] Example E77 includes the subject matter of any of Examples E71-76, further specifying that the cavity is tapered, narrowing toward a bottom of the cavity.

[0655] Example E78 includes the subject matter of any of Examples E71-E77, further specifying that the first conductive contact comprises a wire.

[0656] Example E79 includes the subject matter of example E78, and further specifies that the wire comprises copper, silver, or gold.

[0657] Example E80 includes the subject matter of any of Examples E71-79, further specifying that the surface includes a pointed shape.

[0658] Example E81 includes the subject matter of any of Examples E71-E79, and further specifies that the surface includes an arc shape.

[0659] Example E82 includes the subject matter of example E81, and further specifies that the first conductive contact includes a plurality of wire domes.

[0660] Example E83 includes the subject matter of any of Examples E71-E79, further specifying that the first conductive contact includes a cantilever.

[0661] Example E84 includes the subject matter of any of Examples E71-83, further specifying that the first conductive contact includes a wire wirebonded to metal of the metal layer of the substrate.

[0662] Example E85 includes the subject matter of any of Examples E71-84, further specifying that the substrate includes a surface insulating material on a surface of the substrate, and the cavity extends through at least the surface insulating material.

[0663] Example E86 includes the subject matter of example E85 and further specifies that the cavity extends beyond the surface insulating material into the dielectric material of the substrate.

[0664] Example E87 includes the subject matter of any of Examples E85-86, further specifying that the first conductive contact does not extend beyond the plane of the lower surface of the surface insulating material.

[0665] Example E88 includes the subject matter of any of Examples E71-87, further specifying that the first conductive contact is electrically coupled to the second conductive contact with solder.

[0666] Example E89 includes the subject matter of any of Examples E71-88, further specifying that the first conductive contact is one of a plurality of first conductive contacts in a cavity in the substrate, and the plurality of first conductive contacts have a non-planar contact surface.

[0667] Example E90 includes the subject matter of any of Examples E71-89, further including an underfill material between the second surface of the bridge component and the substrate.

[0668] Example E91 includes the subject matter of example E90, and further specifies that the first conductive contact includes a wire, and the underfill material surrounds the wire.

[0669] Example E92 includes the subject matter of any of Examples E71-91, further specifying that the bridge component includes a conductive path between the second conductive contact of the bridge component and the conductive contact on the first surface of the bridge component.

[0670] Example E93 includes the subject matter of any of Examples E71-92, and further specifies that the bridge component does not contact the dielectric material of the substrate.

[0671] Example E94 includes the subject matter of any of Examples E71-93, and further specifies that the bridge component includes a transistor.

[0672] Example E95 includes the subject matter of any of Examples E71-94, and further specifies that the lower portion of the cavity has an undulating surface.

[0673] Example E96 includes the subject matter of example E95 and further specifies that the undulations have an amplitude of 1 micrometer to 10 micrometers.

[0674] Example E97 includes the subject matter of Example E95 and further specifies that the undulations have an amplitude of less than 1 micrometer.

[0675] Example E98 includes the subject matter of any of Examples E71-E97, further specifying that the surface insulating material on the surface of the substrate has a thickness of 10 micrometers to 30 micrometers.

[0676] Example E99 includes the subject matter of any of Examples E71-98, further specifying that the bridge component includes a semiconductor material.

[0677] Example E100 includes the subject matter of any of Examples E71-99, and further specifies that the bridge component has a thickness of less than 100 micrometers.

[0678] Example E101 includes the subject matter of any of Examples E71-100, further specifying that the pitch of the conductive contacts of the substrate is greater than the pitch of the conductive contacts of the bridge component.

[0679] Example E102 includes the subject matter of any of Examples E71-101, further specifying that the microelectronic component is a first electronics component, and the microelectronic assembly further includes a second electronics component having a first side and an opposing second side, the first side of the second electronics component being between the second side of the second electronics component and the substrate, the second electronics component including conductive contacts on the first side of the second electronics component, some of the conductive contacts of the second electronics component being conductively coupled to the conductive contacts of the substrate at the side of the substrate, and some of the conductive contacts of the second electronics component being conductively coupled to the conductive contacts of the substrate at the first side of the bridge component.

[0680] Example E103 includes the subject matter of any of Examples E71-102, and further specifies that the microelectronic component includes a die.

[0681] Example E104 includes the subject matter of any of Examples E71-103, further including a fill compound between the microelectronic component and the substrate.

[0682] Example E105 includes the subject matter of example E104 and further specifies that the fill compound extends between the microelectronic component and the bridge component.

[0683] Example E106 includes the subject matter of any of Examples E71-105, and further specifies that the microelectronic component includes a transistor.

[0684] Example E107 includes the subject matter of any of examples E71-106, and further specifies that the microelectronic component includes a memory device.

[0685] Example E108 includes the subject matter of any of Examples E71-107, further specifying that the microelectronic assembly has a footprint of less than 100 square millimeters.

[0686] Example E109 includes the subject matter of any of Examples E71-108, further specifying that the conductive contact of the substrate includes a surface finish, and that the surface finish includes nickel.

[0687] Example E110 includes the subject matter of example E109 and further specifies that the facing further includes palladium and gold.

[0688] Example E111 includes the subject matter of any of examples E71-110, and further specifies that the electronics device is a handheld computing device, a laptop computing device, a wearable computing device, or a server computing device.

[0689] Example E112 includes the subject matter of any of Examples E71-111, and further specifies that the circuit board is a motherboard.

[0690] Example E113 includes the subject matter of any of examples E71-112, further including a display communicatively coupled to the circuit board.

[0691] Example E114 includes the subject matter of example E113, and further specifies that the display includes a touchscreen display.

[0692] Example E115 includes the subject matter of any of Examples E71-114, further including a housing enclosing the circuit board and microelectronic assembly.

[0693] Example F1 is a microelectronic structure including a substrate, a cavity in a surface of the substrate, and a bridge component within the cavity, the bridge component including a first surface and an opposing second surface, the second surface of the bridge component being between the first surface of the bridge component and the substrate, the bridge component including a first interconnect material on the first surface of the bridge component, and the bridge component including a second interconnect material on the second surface of the bridge component, the first interconnect material having a different material composition than the second interconnect material.

[0694] Example F2 includes the subject matter of example F1, and further specifies that the first interconnect material includes solder.

[0695] Example F3 includes the subject matter of example F2 and further specifies that the solder of the first interconnect material is a first solder and the second interconnect material comprises a second solder, the second solder having a different material composition than the first solder.

[0696] Example F4 includes the subject matter of example F3 and further specifies that the first solder has a different melting point than the second solder.

[0697] Example F5 includes the subject matter of any of Examples F3-4, and further specifies that the first solder has a higher melting point than the second solder.

[0698] Example F6 includes the subject matter of any of Examples F3-5, and further specifies that the first solder has a melting point greater than 200°C and the second solder has a melting point less than 200°C.

[0699] Example F7 includes the subject matter of any of Examples F1-6, further including a polymeric material surrounding the second interconnect material.

[0700] Example F8 includes the subject matter of any of Examples F1-7, further including an epoxy material between the second surface of the bridge component and the cavity.

[0701] Example F9 includes the subject matter of Example F8 and further specifies that the epoxy material includes epoxy flux dots.

[0702] Example F10 includes the subject matter of Example F8 and further specifies that the epoxy material includes an epoxy flux film.

[0703] Example F11 includes the subject matter of any of Examples F1-2, and further specifies that the second interconnect material comprises a conductive adhesive, and that the conductive adhesive comprises a polymer.

[0704] Example F12 includes the subject matter of any of Examples F1-2, and further specifies that the second interconnect material comprises an intermetallic compound (IMC).

[0705] Example F13 includes the subject matter of Example F12 and further specifies that the IMC includes high-temperature solder particles and low-temperature solder particles.

[0706] Example F14 includes the subject matter of any of Examples F1-2, and further specifies that the second interconnect material comprises a transient liquid phase sintering (TLPS) material.

[0707] Example F15 includes the subject matter of any of Examples F1-2 and 14, and further specifies that the second interconnect material includes a polymer, copper, and tin.

[0708] Example F16 includes the subject matter of any of Examples F1-15, further specifying that the substrate comprises an organic dielectric material.

[0709] Example F17 includes the subject matter of any of Examples F1-16, further specifying that the substrate includes a conductive contact on a surface of the substrate, the surface insulating material includes an opening, and the conductive contact of the substrate is below the opening.

[0710] Example F18 includes the subject matter of example F17, further including solder on the conductive contacts of the substrate.

[0711] Example F19 includes the subject matter of any of Examples F17-18, further specifying that the conductive contact of the substrate is a first conductive contact of the substrate, the surface of the substrate is a first surface of the substrate, the substrate further includes a second surface of the substrate opposite the first surface of the substrate, and the substrate further includes a second conductive contact on the second surface of the substrate.

[0712] Example F20 includes the subject matter of example F19, and further specifies that the second conductive contact is a second-level interconnect contact.

[0713] Example F21 includes the subject matter of any of Examples F1-20, and further specifies that the cavity is tapered, narrowing toward a bottom of the cavity.

[0714] Example F22 includes the subject matter of any of Examples F1-21, further including a conductive contact at a bottom of the cavity, wherein a second conductive contact of the bridge component is bonded to the conductive contact with a second interconnect material.

[0715] Example F23 includes the subject matter of Example F22 and further specifies that the conductive contact is part of the N-1 metal layer of the substrate.

[0716] Example F24 includes the subject matter of any of Examples F1-23, further specifying that the cavity extends beyond the surface insulating material at the surface of the substrate.

[0717] Example F25 includes the subject matter of any of Examples F1-24, and further specifies that the lower portion of the cavity has an undulating surface.

[0718] Example F26 includes the subject matter of Example F25, and further specifies that the undulations have an amplitude of 1 micrometer to 10 micrometers.

[0719] Example F27 includes the subject matter of Example F25, and further specifies that the undulations have an amplitude of less than 1 micrometer.

[0720] Example F28 includes the subject matter of any of Examples F1-27, further specifying that the surface insulating material has a thickness between 10 micrometers and 30 micrometers.

[0721] Example F29 includes the subject matter of any of Examples F1-28, further specifying that the bridge component includes a semiconductor material.

[0722] Example F30 includes the subject matter of any of Examples F1-29, further specifying that the bridge component has a thickness of less than 100 micrometers.

[0723] Example F31 is a microelectronic assembly including a substrate, a cavity in a side of the substrate, a bridge component in the cavity, the bridge component having a first side and an opposing second side, the second side of the bridge component being between the first side of the bridge component and the substrate, the bridge component including a first conductive contact on the first side of the bridge component, the bridge component including a second conductive contact on the second side of the bridge component, and the substrate including a third conductive contact at a bottom of the cavity; and a microelectronic component having a first side and an opposing second side, the first side of the microelectronic component being in contact with the second side of the microelectronic component. a microelectronic component between a substrate and the microelectronic component, the microelectronic component including conductive contacts on a first side of the microelectronic component, a fourth conductive contact of the microelectronic component conductively coupled to a fifth conductive contact of the substrate on the side of the substrate, and a sixth conductive contact of the microelectronic component conductively coupled to the first conductive contact on the first side of the bridge component; a first interconnect material between the first conductive contact and the sixth conductive contact; and a second interconnect material between the second conductive contact and the third conductive contact, wherein the second interconnect material has a different melting point than the first interconnect material.

[0724] Example F32 includes the subject matter of example F31, and further specifies that the first interconnect material includes solder.

[0725] Example F33 includes the subject matter of example F32, and further specifies that the solder of the first interconnect material is a first solder, the second interconnect material comprises a second solder, and the second solder has a different material composition than the first solder.

[0726] Example F34 includes the subject matter of Example F33 and further specifies that the first solder has a lower indium content than the second solder.

[0727] Example F35 includes the subject matter of any of Examples F33-34, and further specifies that the first solder has a higher melting point than the second solder.

[0728] Example F36 includes the subject matter of any of Examples F33-35, and further specifies that the first solder has a melting point greater than 200°C and the second solder has a melting point of 200°C or less.

[0729] Example F37 includes the subject matter of any of Examples F31-36, further including a polymeric material surrounding the second interconnect material.

[0730] Example F38 includes the subject matter of any of Examples F31-37, further including an epoxy material between the second surface of the bridge component and the cavity.

[0731] Example F39 includes the subject matter of Example F38 and further specifies that the epoxy material includes epoxy flux dots.

[0732] Example F40 includes the subject matter of Example F38 and further specifies that the epoxy material includes an epoxy flux film.

[0733] Example F41 includes the subject matter of any of Examples F31-32, and further specifies that the second interconnect material comprises a conductive adhesive, and that the conductive adhesive comprises a polymer.

[0734] Example F42 includes the subject matter of any of Examples F31-32, and further specifies that the second interconnect material includes an intermetallic compound (IMC).

[0735] Example F43 includes the subject matter of Example F42 and further specifies that the IMC includes high-temperature solder particles and low-temperature solder particles.

[0736] Example F44 includes the subject matter of any of Examples F31-32, and further specifies that the second interconnect material includes a transient liquid phase sintering (TLPS) material.

[0737] Example F45 includes the subject matter of any of Examples F31-32 and 44, and further specifies that the second interconnect material includes a polymer, copper, and tin.

[0738] Example F46 includes the subject matter of any of Examples F31-45, and further specifies that the substrate includes an organic dielectric material.

[0739] Example F47 includes the subject matter of any of Examples F31-46, further specifying that the substrate includes a conductive contact on a surface of the substrate, the surface insulating material includes an opening, and the conductive contact of the substrate is below the opening.

[0740] Example F48 includes the subject matter of example F47, further including solder on the conductive contacts of the substrate.

[0741] Example F49 includes the subject matter of any of Examples F47-48, further specifying that the conductive contact of the substrate is a first conductive contact of the substrate, the surface of the substrate is a first surface of the substrate, the substrate further includes a second surface of the substrate opposite the first surface of the substrate, and the substrate further includes a second conductive contact on the second surface of the substrate.

[0742] Example F50 includes the subject matter of example F49, and further specifies that the second conductive contact is a second-level interconnect contact.

[0743] Example F51 includes the subject matter of any of Examples F31-50, and further specifies that the cavity is tapered, narrowing toward a bottom of the cavity.

[0744] Example F52 includes the subject matter of any of Examples F31-51, further including a conductive contact at a bottom of the cavity, wherein a second conductive contact of the bridge component is bonded to the conductive contact with a second interconnect material.

[0745] Example F53 includes the subject matter of example F52 and further specifies that the conductive contact is part of the N-1 metal layer of the substrate.

[0746] Example F54 includes the subject matter of any of Examples F31-53, further specifying that the cavity extends beyond the surface insulating material at the surface of the substrate.

[0747] Example F55 includes the subject matter of any of Examples F31-54, and further specifies that the lower portion of the cavity has an undulating surface.

[0748] Example F56 includes the subject matter of example F55, further specifying that the undulations have an amplitude of 1 micrometer to 10 micrometers.

[0749] Example F57 includes the subject matter of Example F55, and further specifies that the undulations have an amplitude of less than 1 micrometer.

[0750] Example F58 includes the subject matter of any of Examples F31-57, further specifying that the surface insulating material on the surface of the substrate has a thickness of 10 micrometers to 30 micrometers.

[0751] Example F59 includes the subject matter of any of Examples F31-58, and further specifies that the bridge component includes a semiconductor material.

[0752] Example F60 includes the subject matter of any of Examples F31-59, and further specifies that the bridge component has a thickness of less than 100 micrometers.

[0753] Example F61 includes the subject matter of any of Examples F31-60, further specifying that the pitch of the conductive contacts of the substrate is greater than the pitch of the conductive contacts of the bridge component.

[0754] Example F62 includes the subject matter of any of Examples F31-61, further specifying that the microelectronic component is a first electronics component, and the microelectronic assembly further includes a second electronics component having a first side and an opposing second side, the first side of the second electronics component being between the second side of the second electronics component and the substrate, the second electronics component including conductive contacts on the first side of the second electronics component, some of the conductive contacts of the second electronics component being conductively coupled to the conductive contacts of the substrate at the side of the substrate, and some of the conductive contacts of the second electronics component being conductively coupled to the conductive contacts of the substrate at the first side of the bridge component.

[0755] Example F63 includes the subject matter of any of Examples F31-62, and further specifies that the microelectronic component includes a die.

[0756] Example F64 includes the subject matter of any of Examples F31-63, further including a filler compound between the microelectronic component and the substrate.

[0757] Example F65 includes the subject matter of Example F64 and further specifies that the fill compound extends between the microelectronic component and the bridge component.

[0758] Example F66 includes the subject matter of any of Examples F31-65, and further specifies that the microelectronic component includes a transistor.

[0759] Example F67 includes the subject matter of any of Examples F31-F66, and further specifies that the microelectronic component includes a memory device.

[0760] Example F68 includes the subject matter of any of Examples F31-67, further specifying that the microelectronic assembly has a footprint of less than 100 square millimeters.

[0761] Example F69 includes the subject matter of any of Examples F31-68, further specifying that the conductive contact of the substrate includes a surface finish, and that the surface finish includes nickel.

[0762] Example F70 includes the subject matter of Example F69 and further specifies that the facing further includes palladium and gold.

[0763] Example F71 is an electronic device comprising: a circuit board; a microelectronic assembly conductively coupled to the circuit board, the microelectronic assembly including a substrate; a cavity in a surface of the substrate; and a bridge component within the cavity, wherein a portion of the conductive contacts of the bridge component are coupled to the conductive contacts of the substrate; and a microelectronic component having a first surface and an opposing second surface, the first surface of the microelectronic component being between the second surface of the microelectronic component and the substrate, the microelectronic component including conductive contacts on the first surface of the microelectronic component, some of the conductive contacts of the microelectronic component being coupled to the conductive contacts of the substrate, and some of the conductive contacts of the microelectronic component being coupled to the conductive contacts of the bridge component, wherein some of the conductive contacts of the bridge component are coupled to the conductive contacts of the substrate with a second interconnect material, and some of the conductive contacts of the microelectronic component are coupled to the conductive contacts of the bridge component with a first interconnect material.

[0764] Example F72 includes the subject matter of example F71, and further specifies that the first interconnect material includes solder.

[0765] Example F73 includes the subject matter of example F72, and further specifies that the solder of the first interconnect material is a first solder, the second interconnect material includes a second solder, and the second solder has a different material composition than the first solder.

[0766] Example F74 includes the subject matter of example F73 and further specifies that the first solder has a different melting point than the second solder.

[0767] Example F75 includes the subject matter of any of Examples F73-74, and further specifies that the first solder has a higher melting point than the second solder.

[0768] Example F76 includes the subject matter of any of Examples F73-75, and further specifies that the first solder has a melting point greater than 200°C and the second solder has a melting point of 200°C or less.

[0769] Example F77 includes the subject matter of any of Examples F71-76, further including a polymeric material surrounding the second interconnect material.

[0770] Example F78 includes the subject matter of any of Examples F71-77, further including an epoxy material between the second surface of the bridge component and the cavity.

[0771] Example F79 includes the subject matter of Example F78 and further specifies that the epoxy material includes epoxy flux dots.

[0772] Example F80 includes the subject matter of Example F78 and further specifies that the epoxy material includes an epoxy flux film.

[0773] Example F81 includes the subject matter of any of Examples F71-72, and further specifies that the second interconnect material comprises a conductive adhesive, and that the conductive adhesive comprises a polymer.

[0774] Example F82 includes the subject matter of any of Examples F71-72, and further specifies that the second interconnect material includes an intermetallic compound (IMC).

[0775] Example F83 includes the subject matter of Example F82 and further specifies that the IMC includes high-temperature solder particles and low-temperature solder particles.

[0776] Example F84 includes the subject matter of any of Examples F71-72, and further specifies that the second interconnect material includes a transient liquid phase sintering (TLPS) material.

[0777] Example F85 includes the subject matter of any of Examples F71-72 and 84, and further specifies that the second interconnect material includes a polymer, copper, and tin.

[0778] Example F86 includes the subject matter of any of Examples F71-85, and further specifies that the substrate includes an organic dielectric material.

[0779] Example F87 includes the subject matter of any of Examples F71-86, further specifying that the substrate includes a conductive contact on a surface of the substrate, the surface insulating material includes an opening, and the conductive contact of the substrate is below the opening.

[0780] Example F88 includes the subject matter of example F87, further including solder on the conductive contacts of the substrate.

[0781] Example F89 includes the subject matter of any of Examples F87-88, further specifying that the conductive contact of the substrate is a first conductive contact of the substrate, the surface of the substrate is a first surface of the substrate, the substrate further includes a second surface of the substrate opposite the first surface of the substrate, and the substrate further includes a second conductive contact on the second surface of the substrate.

[0782] Example F90 includes the subject matter of example F89, and further specifies that the second conductive contact is a second-level interconnect contact.

[0783] Example F91 includes the subject matter of any of Examples F71-90, and further specifies that the cavity is tapered, narrowing toward a bottom of the cavity.

[0784] Example F92 includes the subject matter of any of Examples F71-91, further including a conductive contact at a bottom of the cavity, wherein a second conductive contact of the bridge component is bonded to the conductive contact with a second interconnect material.

[0785] Example F93 includes the subject matter of example F92 and further specifies that the conductive contacts are part of the N-1 metal layer of the substrate.

[0786] Example F94 includes the subject matter of any of Examples F71-93, further specifying that the cavity extends beyond the surface insulating material at the surface of the substrate.

[0787] Example F95 includes the subject matter of any of Examples F71-94, and further specifies that the lower portion of the cavity has an undulating surface.

[0788] Example F96 includes the subject matter of example F95, and further specifies that the undulations have an amplitude of 1 micrometer to 10 micrometers.

[0789] Example F97 includes the subject matter of example F95, and further specifies that the undulations have an amplitude of less than 1 micrometer.

[0790] Example F98 includes the subject matter of any of Examples F71-97, further specifying that the surface insulating material on the surface of the substrate has a thickness of 10 micrometers to 30 micrometers.

[0791] Example F99 includes the subject matter of any of Examples F71-98, and further specifies that the bridge component includes a semiconductor material.

[0792] Example F100 includes the subject matter of any of Examples F71-99, and further specifies that the bridge component has a thickness of less than 100 micrometers.

[0793] Example F101 includes the subject matter of any of Examples F71-100, further specifying that the pitch of the conductive contacts of the substrate is greater than the pitch of the conductive contacts of the bridge component.

[0794] Example F102 includes the subject matter of any of Examples F71-101, and further specifies that the microelectronic component is a first electronics component, and the microelectronic assembly further includes a second electronics component having a first side and an opposing second side, the first side of the second electronics component being between the second side of the second electronics component and the substrate, the second electronics component including conductive contacts on the first side of the second electronics component, some of the conductive contacts of the second electronics component being conductively coupled to the conductive contacts of the substrate at the side of the substrate, and some of the conductive contacts of the second electronics component being conductively coupled to the conductive contacts of the substrate at the first side of the bridge component.

[0795] Example F103 includes the subject matter of any of Examples F71-102, and further specifies that the microelectronic component includes a die.

[0796] Example F104 includes the subject matter of any of Examples F71-103, further including a fill compound between the microelectronic component and the substrate.

[0797] Example F105 includes the subject matter of Example F104 and further specifies that the fill compound extends between the microelectronic component and the bridge component.

[0798] Example F106 includes the subject matter of any of Examples F71-105, and further specifies that the microelectronic component includes a transistor.

[0799] Example F107 includes the subject matter of any of examples F71-F106, and further specifies that the microelectronic component includes a memory device.

[0800] Example F108 includes the subject matter of any of Examples F71-107, and further specifies that the microelectronic assembly has a footprint of less than 100 square millimeters.

[0801] Example F109 includes the subject matter of any of Examples F71-108, and further specifies that the conductive contact of the substrate includes a surface finish, and that the surface finish includes nickel.

[0802] Example F110 includes the subject matter of Example F109 and further specifies that the facing further includes palladium and gold.

[0803] Example F111 includes the subject matter of any of examples F71-110, and further specifies that the electronics device is a handheld computing device, a laptop computing device, a wearable computing device, or a server computing device.

[0804] Example F112 includes the subject matter of any of Examples F71-111, and further specifies that the circuit board is a motherboard.

[0805] Example F113 includes the subject matter of any of examples F71-112, further including a display communicatively coupled to the circuit board.

[0806] Example F114 includes the subject matter of example F113, and further specifies that the display includes a touchscreen display.

[0807] Example F115 includes the subject matter of any of Examples F71-114, further including a housing enclosing the circuit board and microelectronic assembly.

[0808] Example G1 is a microelectronic structure including a substrate, a cavity in the substrate (metal of a first metal layer in the substrate and metal of a second metal layer in the substrate are exposed in the cavity), and a bridge component in the cavity, the bridge component having a first surface and an opposing second surface, the second surface of the bridge component being between the first surface of the bridge component and the substrate, the bridge component including a conductive contact on the first surface of the bridge component, the bridge component including a second conductive contact on the second surface of the bridge component, the second conductive contact being electrically coupled to the first metal layer or metal of the first metal layer, and a portion of the first metal layer being between the bridge component and the second metal layer.

[0809] Example G2 includes the subject matter of example G1 and further specifies that the second conductive contact is electrically coupled to the metal of the first metal layer.

[0810] Example G3 includes the subject matter of Example G2 and further specifies that the first metal layer and the metal of the second metal layer together provide the lower portion of the cavity.

[0811] Example G4 includes the subject matter of example G2, and further specifies that the substrate further includes a third metal layer, a portion of the second metal layer is between the bridge component and the third metal layer, and the metals of the first metal layer, the second metal layer, and the third metal layer together provide a lower portion of the cavity.

[0812] Example G5 includes the subject matter of example G1, and further specifies that the second conductive contact is electrically coupled to the metal of the second metal layer.

[0813] Example G6 includes the subject matter of Example G5 and further specifies that the metals of the first metal layer and the second metal layer together provide the lower portion of the cavity.

[0814] Example G7 includes the subject matter of any of Examples G1-6, and further specifies that the substrate comprises an organic dielectric material.

[0815] Example G8 includes the subject matter of any of Examples G1-7, further specifying that the substrate includes a conductive contact on a surface of the substrate, a surface insulating material is on the surface of the substrate, the surface insulating material includes an opening, and the conductive contact of the substrate is below the opening.

[0816] Example G9 includes the subject matter of Example G8, and further includes solder on the conductive contacts of the substrate.

[0817] Example G10 includes the subject matter of any of Examples G8-9, and further specifies that the conductive contact of the substrate is a first conductive contact of the substrate, the surface of the substrate is a first surface of the substrate, the substrate further includes a second surface of the substrate opposite the first surface of the substrate, and the substrate further includes a second conductive contact on the second surface of the substrate.

[0818] Example G11 includes the subject matter of example G10, and further specifies that the second conductive contact is a second-level interconnect contact.

[0819] Example G12 includes the subject matter of any of Examples G1-11, and further specifies that the cavity is tapered, narrowing toward the bottom of the cavity.

[0820] Example G13 includes the subject matter of any of Examples G1-12, and further specifies that the lower portion of the cavity has an undulating surface.

[0821] Example G14 includes the subject matter of Example G13, and further specifies that the undulations have an amplitude of 1 micrometer to 10 micrometers.

[0822] Example G15 includes the subject matter of Example G13, and further specifies that the undulations have an amplitude of less than 1 micrometer.

[0823] Example G16 includes the subject matter of any of Examples G1-15, further specifying that the surface insulating material is on a surface of the substrate, and the surface insulating material has a thickness of 10 micrometers to 30 micrometers.

[0824] Example G17 includes the subject matter of any of Examples G1-16, and further specifies that the bridge component includes a semiconductor material.

[0825] Example G18 includes the subject matter of any of Examples G1-17, and further specifies that the bridge component has a thickness of less than 100 micrometers.

[0826] Example G19 is a microelectronic structure including a substrate, a cavity in the substrate (a lower portion of the cavity including a dielectric material and a metal), and a bridge component in the cavity, the bridge component including a first surface and an opposing second surface, the second surface of the bridge component being between the first surface of the bridge component and the substrate, the bridge component including a conductive contact on the first surface of the bridge component, and the bridge component including a second conductive contact on the second surface of the bridge component, the second conductive contact being electrically coupled to the metal at the lower portion of the cavity.

[0827] Example G20 includes the subject matter of example G19 and further specifies that the top surface of the metal in the lower portion of the cavity is flush with the top surface of the dielectric material in the lower portion of the cavity.

[0828] Example G21 includes the subject matter of Example G20 and further specifies that the substrate includes a metal ring around the bottom of the cavity.

[0829] Example G22 includes the subject matter of Example G21, and further specifies that the metal ring is flush with the metal at the bottom of the cavity.

[0830] Example G23 includes the subject matter of example G19, and further specifies that the top surface of the metal in the lower portion of the cavity is not flush with the top surface of the dielectric material in the lower portion of the cavity.

[0831] Example G24 includes the subject matter of Example G23 and further specifies that the lower surface of the metal at the bottom of the cavity is flush with the upper surface of the dielectric material at the bottom of the cavity.

[0832] Example G25 includes the subject matter of any of Examples G19-24, and further specifies that the second conductive contact is electrically coupled to the metal at the bottom of the cavity with solder.

[0833] Example G26 includes the subject matter of any of Examples G19-25, and further specifies that the substrate includes an organic dielectric material.

[0834] Example G27 includes the subject matter of any of Examples G19-26, and further specifies that the substrate includes a conductive contact on a surface of the substrate, the surface insulating material includes an opening, and the conductive contact of the substrate is below the opening.

[0835] Example G28 includes the subject matter of Example G27, and further includes solder on the conductive contacts of the substrate.

[0836] Example G29 includes the subject matter of any of Examples G27-28, further specifying that the conductive contact of the substrate is a first conductive contact of the substrate, the surface of the substrate is a first surface of the substrate, the substrate further includes a second surface of the substrate opposite the first surface of the substrate, and the substrate further includes a second conductive contact on the second surface of the substrate.

[0837] Example G30 includes the subject matter of example G29, and further specifies that the second conductive contact is a second-level interconnect contact.

[0838] Example G31 includes the subject matter of any of Examples G19-30, and further specifies that the cavity is tapered, narrowing toward the bottom of the cavity.

[0839] Example G32 includes the subject matter of any of Examples G19-31, and further specifies that the lower portion of the cavity has an undulating surface.

[0840] Example G33 includes the subject matter of Example G32 and further specifies that the undulations have an amplitude of 1 micrometer to 10 micrometers.

[0841] Example G34 includes the subject matter of Example G32 and further specifies that the undulations have an amplitude of less than 1 micrometer.

[0842] Example G35 includes the subject matter of any of Examples G19-34, and further specifies that the surface insulating material has a thickness between 10 micrometers and 30 micrometers.

[0843] Example G36 includes the subject matter of any of Examples G19-35, and further specifies that the bridge component includes a semiconductor material.

[0844] Example G37 includes the subject matter of any of Examples G19-36, and further specifies that the bridge component has a thickness of less than 100 micrometers.

[0845] Example G38 is a microelectronic assembly including a substrate, a microelectronic structure (including a bridge component in a cavity of the substrate according to any of Examples G1-37), and a microelectronic component having a first side and an opposing second side, the first side of the microelectronic component being between the second side of the microelectronic component and the substrate, the microelectronic component including conductive contacts on the first side of the microelectronic component, some of the conductive contacts of the microelectronic component being conductively coupled to the conductive contacts of the substrate on the side of the substrate, and some of the conductive contacts of the microelectronic component being conductively coupled to the conductive contacts on the first side of the bridge component.

[0846] Example G39 includes the subject matter of example G38, and further specifies that the pitch of the conductive contacts of the substrate is greater than the pitch of the conductive contacts of the bridge component.

[0847] Example G40 includes the subject matter of any of Examples G38-39, and further specifies that the microelectronic component is a first electronics component, and the microelectronic assembly further includes a second electronics component having a first side and an opposing second side, the first side of the second electronics component being between the second side of the second electronics component and the substrate, the second electronics component including conductive contacts on the first side of the second electronics component, some of the conductive contacts of the second electronics component being conductively coupled to the conductive contacts of the substrate at the side of the substrate, and some of the conductive contacts of the second electronics component being conductively coupled to the conductive contacts of the substrate at the first side of the bridge component.

[0848] Example G41 includes the subject matter of any of Examples G38-40, and further specifies that the microelectronic component includes a die.

[0849] Example G42 includes the subject matter of any of Examples G38-41, further including a fill compound between the microelectronic component and the substrate.

[0850] Example G43 includes the subject matter of Example G42 and further specifies that the fill compound extends between the microelectronic component and the bridge component.

[0851] Example G44 includes the subject matter of any of Examples G38-43, and further specifies that the microelectronic component includes a transistor.

[0852] Example G45 includes the subject matter of any of Examples G38-44, and further specifies that the microelectronic component includes a memory device.

[0853] Example G46 includes the subject matter of any of Examples G38-45, and further specifies that the microelectronic assembly has a footprint of less than 100 square millimeters.

[0854] Example G47 includes the subject matter of any of Examples G38-46, and further specifies that the conductive contact of the substrate includes a surface finish, and that the surface finish includes nickel.

[0855] Example G48 includes the subject matter of Example G47 and further specifies that the facing further includes palladium and gold.

[0856] Example G49 includes the subject matter of any of Examples G38-48, and further specifies that the substrate includes one or more metal layers over the cavity.

[0857] Example G50 includes the subject matter of any of Examples G38-49, and further specifies that the bridge component is embedded in the substrate.

[0858] Example G51 is an electronic device including a circuit board and a microelectronic assembly according to any one of the microelectronic assemblies of Examples G38-48 conductively coupled to the circuit board.

[0859] Example G52 includes the subject matter of example G51 and further specifies that the electronics device is a handheld computing device, a laptop computing device, a wearable computing device, or a server computing device.

[0860] Example G53 includes the subject matter of any of Examples G51-52, and further specifies that the circuit board is a motherboard.

[0861] Example G54 includes the subject matter of any of Examples G51-53, further including a display communicatively coupled to the circuit board.

[0862] Example G55 includes the subject matter of example G54, and further specifies that the display includes a touchscreen display.

[0863] Example G56 includes the subject matter of any of Examples G51-55, further including a housing enclosing the circuit board and microelectronic assembly. (Item 1) 1. A microelectronic structure comprising: A substrate; a cavity in a surface of the substrate; The bridge component in the cavity the bridge component includes a first surface and an opposing second surface, the second surface of the bridge component is between the first surface of the bridge component and the substrate, the bridge component includes a first interconnect material on the first surface of the bridge component and a second interconnect material on the second surface of the bridge component, the first interconnect material having a different material composition than the second interconnect material. (Item 2) Item 10. The microelectronic structure of item 1, wherein the first interconnect material comprises solder. (Item 3) Item 3. The microelectronic structure of item 2, wherein the solder of the first interconnect material is a first solder and the second interconnect material comprises a second solder, the second solder having a different material composition than the first solder. (Item 4) Item 4. The microelectronic structure of item 3, wherein the first solder has a different melting point than the second solder. (Item 5) Item 4. The microelectronic structure of item 3, wherein the first solder has a higher melting point than the second solder. (Item 6) Item 10. The microelectronic structure of item 1, further comprising a polymer material surrounding the second interconnect material. (Item 7) Item 10. The microelectronic structure of item 1, further comprising an epoxy material between the second surface of the bridge component and the cavity. (Item 8) Item 10. The microelectronic structure of item 1, wherein the second interconnect material comprises a conductive adhesive, the conductive adhesive comprising a polymer. (Item 9) Item 10. The microelectronic structure of item 1, wherein the second interconnect material comprises an intermetallic compound (IMC). (Item 10) Item 10. The microelectronic structure of item 9, wherein the IMC comprises high-temperature solder particles and low-temperature solder particles. (Item 11) Item 10. The microelectronic structure of item 1, wherein the second interconnect material comprises a transient liquid phase sintering (TLPS) material. (Item 12) Item 10. The microelectronic structure of item 1, wherein the second interconnect material comprises a polymer, copper, and tin. (Item 13) 1. A microelectronic assembly comprising: A substrate; a cavity in a surface of the substrate; a bridge component in the cavity, the bridge component including a first surface and an opposing second surface, the second surface of the bridge component being between the first surface of the bridge component and the substrate, the bridge component including a first conductive contact on the first surface of the bridge component, the bridge component including a second conductive contact on the second surface of the bridge component, and the substrate including a third conductive contact at a bottom of the cavity; a microelectronic component having a first side and an opposing second side, the first side of the microelectronic component being between the second side of the microelectronic component and the substrate, the microelectronic component including conductive contacts on the first side of the microelectronic component, a fourth conductive contact of the microelectronic component being conductively coupled to a fifth conductive contact of the substrate at the side of the substrate, and a sixth conductive contact of the microelectronic component being conductively coupled to the first conductive contact at the first side of the bridge component; a first interconnect material between the first conductive contact and the sixth conductive contact; a second interconnect material between the second conductive contact and the third conductive contact, the second interconnect material having a different melting point than the first interconnect material; and A microelectronic assembly comprising: (Item 14) Item 14. The microelectronic assembly of item 13, wherein the cavity extends beyond the surface insulating material at the face of the substrate. (Item 15) Item 14. The microelectronic assembly of item 13, wherein the bridge component comprises a semiconductor material. (Item 16) Item 14. The microelectronic assembly according to item 13, wherein the pitch of the conductive contacts of the substrate is greater than the pitch of the conductive contacts of the bridge component. (Item 17) An electronic device comprising: A circuit board; a microelectronic assembly conductively coupled to the circuit board; the microelectronic assembly comprising: A substrate; a cavity in a surface of the substrate; a bridge component in the cavity, a portion of the conductive contacts of the bridge component being coupled to the conductive contacts of the substrate; a microelectronic component having a first surface and an opposing second surface, the first surface of the microelectronic component being between the second surface of the microelectronic component and the substrate, the microelectronic component including conductive contacts on the first surface of the microelectronic component, some of the conductive contacts of the microelectronic component being coupled to the conductive contacts of the substrate, and some of the conductive contacts of the microelectronic component being coupled to the conductive contacts of the bridge component; an electronics device, wherein some of the conductive contacts of the bridge component are coupled to the conductive contacts of the substrate with a second interconnect material, and some of the conductive contacts of the microelectronic component are coupled to the conductive contacts of the bridge component with a first interconnect material. (Item 18) Item 18. The electronic device of item 17, further comprising a polymer material surrounding the second interconnect material. (Item 19) Item 18. The electronic device of item 17, further comprising an epoxy material between the second surface of the bridge component and the cavity. (Item 20) Item 18. The electronic device of item 17, wherein the second interconnect material comprises a conductive adhesive, the conductive adhesive comprising a polymer.

Claims

1. 1. A microelectronic structure comprising: A substrate; a cavity in a surface of the substrate; a bridge component within the cavity; and the bridge component includes a first surface and an opposing second surface, the second surface of the bridge component being between the first surface of the bridge component and the substrate, the bridge component including a first interconnect material on the first surface of the bridge component, and the bridge component including a second interconnect material on the second surface of the bridge component, the first interconnect material having a different material composition than the second interconnect material; a top surface of the bridge component above a top surface of the substrate; the first interconnect material comprises a first solder, the second interconnect material comprises a second solder, the first solder having a higher melting point than the second solder; Microelectronic structures.

2. 2. The microelectronic structure of claim 1, wherein a lower portion of the cavity in the thickness direction of the substrate is the top surface of the substrate.

3. a first surface insulating material provided in a first region on the top surface of the substrate, and a second surface insulating material provided in a second region on the top surface of the substrate; the cavity is sandwiched between the first surface insulating material and the second surface insulating material in an in-plane direction of the substrate, the first surface insulating material and the second surface insulating material are absent between the substrate and the bridge component in a thickness direction of the substrate; 3. A microelectronic structure according to claim 1 or 2.

4. one side surface of the cavity includes a side surface of the first surface insulating material facing the second surface insulating material in an in-plane direction of the substrate; the other side surface of the cavity includes a side surface of the second surface insulating material facing the first surface insulating material in an in-plane direction of the substrate; The microelectronic structure of claim 3 .

5. The microelectronic structure of claim 4 , further comprising a metal layer disposed in the thickness direction of the substrate between a lower portion of the cavity and the second surface of the bridge component.

6. 6. The microelectronic structure of claim 5, wherein the metal layer extends from a bottom of the cavity to the side of the first surface insulating material and from a bottom of the cavity to the side of the second surface insulating material.

7. A microelectronic structure comprising: A substrate; a cavity in a surface of the substrate; a bridge component within the cavity; the bridge component includes a first surface and an opposing second surface, the second surface of the bridge component being between the first surface of the bridge component and the substrate, the bridge component including a first interconnect material on the first surface of the bridge component, and the bridge component including a second interconnect material on the second surface of the bridge component, the first interconnect material having a different material composition than the second interconnect material; a top surface of the bridge component above a top surface of the substrate; the microelectronic structure comprising: a first surface insulating material disposed in a first region on the top surface of the substrate; and a second surface insulating material disposed in a second region on the top surface of the substrate. a metal layer disposed between a lower portion of the cavity and the second surface of the bridge component in a thickness direction of the substrate; Further provided with the cavity is sandwiched between the first surface insulating material and the second surface insulating material in an in-plane direction of the substrate, the first surface insulating material and the second surface insulating material are not present between the substrate and the bridge component in a thickness direction of the substrate; one side surface of the cavity includes a side surface of the first surface insulating material facing the second surface insulating material in an in-plane direction of the substrate; the other side surface of the cavity includes a side surface of the second surface insulating material facing the first surface insulating material in an in-plane direction of the substrate; the metal layer extends from a lower portion of the cavity to the side surface of the first surface insulating material and from a lower portion of the cavity to the side surface of the second surface insulating material; the microelectronic structure further comprising an ultraviolet curable epoxy material between the second surface of the bridge component and the cavity; Microelectronic structures.

8. 8. The microelectronic structure of claim 3, wherein a top surface of the bridge component is above a top surface of the first surface insulating material and above a top surface of the second surface insulating material.

9. 9. The microelectronic structure of claim 3, further comprising a molding material disposed above the bridge component, above the first surface insulating material, and above the second surface insulating material.

10. 10. The microelectronic structure of claim 9, wherein the molding material is absent between the substrate and the bridge component through the thickness of the substrate.

11. The microelectronic structure of claim 7 , wherein the first interconnect material comprises a solder.

12. 12. The microelectronic structure of claim 11, wherein the solder of the first interconnect material is a first solder and the second interconnect material comprises a second solder, the second solder having a different material composition than the first solder.

13. 13. The microelectronic structure of claim 12, wherein the first solder has a different melting point than the second solder.

14. 13. The microelectronic structure of claim 12, wherein the first solder has a higher melting point than the second solder.

15. A microelectronic structure as described in any one of claims 1 to 6, wherein the second solder has a different material composition than the first solder.

16. The microelectronic structure of claim 1 , further comprising a polymer material surrounding the second interconnect material.

17. The microelectronic structure of claim 1 , further comprising an epoxy material between the second surface of the bridge component and the cavity.

18. 16. The microelectronic structure of claim 1, wherein the second interconnect material comprises a conductive adhesive, the conductive adhesive comprising a polymer.

19. The microelectronic structure of claim 1 , wherein the second interconnect material comprises an intermetallic compound (IMC).

20. 20. The microelectronic structure of claim 19, wherein the IMC comprises high temperature solder particles and low temperature solder particles.

21. 16. The microelectronic structure of claim 1, wherein the second interconnect material comprises a transient liquid phase sintering (TLPS) material.

22. The microelectronic structure of claim 1 , wherein the second interconnect material comprises a polymer, copper, and tin.

23. 1. A microelectronic assembly comprising: A substrate; a cavity in a surface of the substrate; a bridge component in the cavity, the bridge component including a first surface and an opposing second surface, the second surface of the bridge component being between the first surface of the bridge component and the substrate, the bridge component including a first conductive contact on the first surface of the bridge component, the bridge component including a second conductive contact on the second surface of the bridge component, and the substrate including a third conductive contact at a lower portion of the cavity; a microelectronic component having a first side and an opposing second side, the first side of the microelectronic component being between the second side of the microelectronic component and the substrate, the microelectronic component including conductive contacts on the first side of the microelectronic component, a fourth conductive contact of the microelectronic component being conductively coupled to a fifth conductive contact of the substrate at the side of the substrate, and a sixth conductive contact of the microelectronic component being conductively coupled to the first conductive contact at the first side of the bridge component; a first interconnect material between the first conductive contact and the sixth conductive contact; a second interconnect material between the second conductive contact and the third conductive contact, the second interconnect material having a different melting point than the first interconnect material; and Equipped with a top surface of the bridge component above a top surface of the substrate; The first interconnect material comprises a first solder, the second interconnect material comprises a second solder, and the first solder has a higher melting point than the second solder. Microelectronics assembly.

24. 24. The microelectronic assembly of claim 23, wherein in the thickness direction of the substrate, a lower portion of the cavity is the top surface of the substrate.

25. a first surface insulating material provided in a first region on the top surface of the substrate, and a second surface insulating material provided in a second region on the top surface of the substrate; the cavity is sandwiched between the first surface insulating material and the second surface insulating material in an in-plane direction of the substrate, the first surface insulating material and the second surface insulating material are absent between the substrate and the bridge component in a thickness direction of the substrate; 25. A microelectronic assembly according to claim 23 or 24.

26. one side surface of the cavity includes a side surface of the first surface insulating material facing the second surface insulating material in an in-plane direction of the substrate; the other side surface of the cavity includes a side surface of the second surface insulating material facing the first surface insulating material in an in-plane direction of the substrate; 26. The microelectronic assembly of claim 25.

27. 27. The microelectronic assembly of claim 26, further comprising a metal layer disposed in the thickness direction of the substrate between a lower portion of the cavity and the second surface of the bridge component.

28. 28. The microelectronic assembly of claim 27, wherein the metal layer extends from a bottom of the cavity to the side of the first surface insulating material and from a bottom of the cavity to the side of the second surface insulating material.

29. 29. The microelectronic assembly of claim 25, wherein a top surface of the bridge component is above a top surface of the first surface insulating material and above a top surface of the second surface insulating material.

30. 30. The microelectronic assembly of claim 25, further comprising a molding material disposed between the bridge component and the microelectronic component, between the first surface insulating material and the microelectronic component, and between the second surface insulating material and the microelectronic component in a thickness direction of the substrate.

31. 31. The microelectronic assembly of claim 30, wherein the molding material is absent between the substrate and the bridge component in the thickness direction of the substrate.

32. 32. A microelectronic assembly according to any one of claims 25 to 31, wherein the cavity extends beyond the first surface insulating material and beyond the second surface insulating material at the surface of the substrate.

33. a high-temperature solder above and in contact with the fifth conductive contact, and a low-temperature solder below and in contact with the fourth conductive contact; The high-temperature solder and the low-temperature solder are in contact with each other.

33. A microelectronic assembly according to any one of claims 25 to 32.

34. 34. The microelectronic assembly of claim 33, wherein the high temperature solder contacts the first surface insulating material and contacts the second surface insulating material.

35. a first solder contacting the first conductive contact above the first conductive contact and contacting the sixth conductive contact; In the thickness direction of the substrate, a position where the high-temperature solder and the low-temperature solder contact each other is lower than a position where the first conductive contact and the first solder contact each other.

35. A microelectronic assembly according to claim 33 or 34.

36. 36. The microelectronic assembly of any one of claims 23 to 35, wherein the bridge component comprises a semiconductor material.

37. 37. The microelectronic assembly of any one of claims 23 to 36, wherein the pitch of the conductive contacts of the substrate is greater than the pitch of the conductive contacts of the bridge component.

38. An electronic device comprising: A circuit board; a microelectronic assembly conductively coupled to the circuit board; the microelectronic assembly comprising: A substrate; a cavity in a surface of the substrate; a bridge component in the cavity, a portion of the conductive contacts of the bridge component being coupled to the conductive contacts of the substrate; a microelectronic component having a first surface and an opposing second surface, the first surface of the microelectronic component being between the second surface of the microelectronic component and the substrate, the microelectronic component including conductive contacts on the first surface of the microelectronic component, some of the conductive contacts of the microelectronic component being coupled to the conductive contacts of the substrate, and some of the conductive contacts of the microelectronic component being coupled to the conductive contacts of the bridge component; a portion of the conductive contacts of the bridge component are coupled to the conductive contacts of the substrate with a second interconnect material, and a portion of the conductive contacts of the microelectronic component are coupled to the conductive contacts of the bridge component with a first interconnect material; a top surface of the bridge component above a top surface of the substrate; The first interconnect material comprises a first solder, the second interconnect material comprises a second solder, and the first solder has a higher melting point than the second solder. Electronics devices.

39. 39. The electronic device of claim 38, wherein a lower portion of the cavity in a thickness direction of the substrate is the top surface of the substrate.

40. a first surface insulating material provided in a first region on the top surface of the substrate, and a second surface insulating material provided in a second region on the top surface of the substrate; the cavity is sandwiched between the first surface insulating material and the second surface insulating material in an in-plane direction of the substrate, the first surface insulating material and the second surface insulating material are absent between the substrate and the bridge component in a thickness direction of the substrate; 40. An electronic device according to claim 38 or 39.

41. one side surface of the cavity includes a side surface of the first surface insulating material facing the second surface insulating material in an in-plane direction of the substrate; the other side surface of the cavity includes a side surface of the second surface insulating material facing the first surface insulating material in an in-plane direction of the substrate; 41. The electronic device of claim 40.

42. 42. The electronic device of claim 41, further comprising a metal layer disposed between a lower portion of the cavity and the second surface of the bridge component in a thickness direction of the substrate.

43. 43. The electronic device of claim 42, wherein the metal layer extends from a bottom of the cavity to a side of the first surface insulating material and from a bottom of the cavity to a side of the second surface insulating material.

44. An electronic device comprising: A circuit board; a microelectronic assembly conductively coupled to the circuit board; the microelectronic assembly comprising: A substrate; a cavity in a surface of the substrate; a bridge component in the cavity, a portion of the conductive contacts of the bridge component being coupled to the conductive contacts of the substrate; a microelectronic component having a first surface and an opposing second surface, the first surface of the microelectronic component being between the second surface of the microelectronic component and the substrate, the microelectronic component including conductive contacts on the first surface of the microelectronic component, some of the conductive contacts of the microelectronic component being coupled to the conductive contacts of the substrate, and some of the conductive contacts of the microelectronic component being coupled to the conductive contacts of the bridge component; Equipped with a portion of the conductive contacts of the bridge component are coupled to the conductive contacts of the substrate with a second interconnect material, and a portion of the conductive contacts of the microelectronic component are coupled to the conductive contacts of the bridge component with a first interconnect material; a top surface of the bridge component above a top surface of the substrate; The electronic device is a first surface insulating material disposed in a first region on the top surface of the substrate; and a second surface insulating material disposed in a second region on the top surface of the substrate. a metal layer disposed between a lower portion of the cavity and the second surface of the bridge component in a thickness direction of the substrate; Further provided with the cavity is sandwiched between the first surface insulating material and the second surface insulating material in an in-plane direction of the substrate, the first surface insulating material and the second surface insulating material are not present between the substrate and the bridge component in a thickness direction of the substrate; one side surface of the cavity includes a side surface of the first surface insulating material facing the second surface insulating material in an in-plane direction of the substrate; the other side surface of the cavity includes a side surface of the second surface insulating material facing the first surface insulating material in an in-plane direction of the substrate; the metal layer extends from a lower portion of the cavity to a side surface of the first surface insulating material, and also extends from a lower portion of the cavity to a side surface of the second surface insulating material; the electronic device further comprising an ultraviolet-curable epoxy material between the second surface of the bridge component and the cavity. Electronics devices.

45. 45. The electronic device of claim 40, wherein a top surface of the bridge component is above a top surface of the first surface insulating material and above a top surface of the second surface insulating material.

46. 46. ​​The electronic device of claim 40, further comprising a molding material disposed between the bridge component and the microelectronic component, between the first surface insulating material and the microelectronic component, and between the second surface insulating material and the microelectronic component in a thickness direction of the substrate.

47. 47. The electronic device of claim 46, wherein the molding material is absent between the substrate and the bridge component in the thickness direction of the substrate.

48. 48. The electronic device of any one of claims 38 to 47, further comprising a polymer material surrounding the second interconnect material.

49. 44. The electronic device of claim 38, further comprising an epoxy material between the second surface of the bridge component and the cavity.

50. 49. The electronic device of any one of claims 38 to 48, wherein the second interconnect material comprises a conductive adhesive, the conductive adhesive comprising a polymer.

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