Etching gas

Abstract

An object of the present disclosure is to provide a new etching gas. An etching gas.

Description

[Technical Field]

[0001] The present disclosure relates to etching gases. [Background technology]

[0002] Patent Document 1 discloses an etching method in which etching gases of CF3COCF3 (hexafluoroacetone) and C3F6O (hexafluoropropene oxide) and argon gas are introduced into a processing chamber at a flow rate ratio of 1:10 to 30, and a silicon oxide-based material layer on a substrate to be processed in the processing chamber is etched in a plasma atmosphere. [Prior art documents] [Non-patent literature]

[0003] [Patent Document 1] Publication number JP 9-129612 Summary of the Invention [Problem to be solved by the invention]

[0004] An object of the present disclosure is to provide a new etching gas containing 1,2-difluoroethylene (CHF=CHF). [Means for solving the problem]

[0005] The present disclosure encompasses the following configurations.

[0006] Section 1. Etching gas containing 1,2-difluoroethylene (CHF=CHF).

[0007] Section 2. A method for etching a substrate for manufacturing a semiconductor, using the etching gas according to item 1.

[0008] Section 3. Item 1. A semiconductor manufacturing device having a gas ejection portion for an etching gas according to item 1.

[0009] Section 4. Item 1. A method for producing a semiconductor, comprising etching a substrate for producing a semiconductor using the etching gas according to item 1.

[0010] Section 5. Item 1. Use of the etching gas according to item 1 for etching a substrate for semiconductor manufacturing, for semiconductor manufacturing. [Effects of the Invention]

[0011] According to the present disclosure, it is possible to newly provide an etching gas containing 1,2-difluoroethylene (CHF=CHF). DETAILED DESCRIPTION OF THE INVENTION

[0012] In this specification, "containing" is a concept that encompasses all of "comprise," "consist essentially of," and "consist only of." In this specification, when a numerical range is expressed as "A to B," it means "A or more and B or less." When parts, % and the like are used in this specification, these represent parts by mass, parts by weight, mass %, or weight % (wt%).

[0013] 1. Etching gas Conventional semiconductor manufacturing is an environmentally hazardous process, as it uses gases with high global warming potential (GWP), such as c-C4F8 (GWP: 10,300), CF4 (GWP: 7,390), SF6 (GWP: 24,300), CHF3 (GWP: 14,800), and CH2F2 (GWP: 675), in its microfabrication process.

[0014] The present disclosure encompasses an etching gas containing 1,2-difluoroethylene (CHF=CHF) used to etch semiconductor manufacturing substrates during semiconductor manufacturing.

[0015] 1,2-Difluoroethylene The etching gas of the present disclosure uses 1,2-difluoroethylene (CHF=CHF), a low GWP gas, and can effectively etch substrates used in semiconductor manufacturing.

[0016] In the etching gas of the present disclosure, from the viewpoint of etching rate (ER), it is preferable to use at least one type of 1,2-difluoroethylene selected from the group consisting of trans-1,2-difluoroethylene (HFO-1132(E)) and cis-1,2-difluoroethylene (HFO-1132(Z)), and more preferably trans-1,2-difluoroethylene (HFO-1132(E), GWP: 0.0036).

[0017] The etching gas of the present disclosure may use one type of 1,2-difluoroethylene alone, or may use a mixture (blend) of two or more types.

[0018] Other etching gases The etching gas of the present disclosure may contain other etching gases, such as hydrofluorocarbon compounds (HFCs) such as CH2F2, CHF3, C2H2F2 (1,1-difluoroethylene), C2H4F2, and C3H2F4; perfluorocarbon compounds (PFCs) such as CF4, C2F6, C3F8, C4F8, C3F6, C4F6, and C5F8; iodides such as CF3I, C2F5I, and C3F7I; and SF6.

[0019] The etching gas of the present disclosure may be used alone or in the form of a mixture (blend) of two or more of the other etching gases.

[0020] inert gas The etching gas of the present disclosure may contain an inert gas as needed from the viewpoint of etching rate (ER). Examples of the inert gas include one or more of rare gases, nitrogen, etc. Examples of rare gases include helium, neon, argon, xenon, krypton, etc., with argon being preferred. These inert gases may be used alone or in combination (blended) of two or more.

[0021] Etching gas The etching gas of the present disclosure exhibits a high etching rate (ER) for substrates used in semiconductor manufacturing.

[0022] The etching gas of the present disclosure is a low GWP gas, enabling sustainable microfabrication techniques with low environmental impact for semiconductor manufacturing substrates.

[0023] 2. How to perform etching The present disclosure includes a method for etching a substrate for manufacturing a semiconductor, using an etching gas containing 1,2-difluoroethylene (CHF=CHF) of the present disclosure as a gas supplied to generate plasma.

[0024] 3.Semiconductor manufacturing equipment . The present disclosure encompasses a semiconductor manufacturing apparatus having a gas ejection portion for an etching gas containing 1,2-difluoroethylene (CHF=CHF) of the present disclosure.

[0025] 4. Semiconductor manufacturing method The present disclosure includes a method for manufacturing a semiconductor, in which a substrate for manufacturing a semiconductor is etched using an etching gas containing 1,2-difluoroethylene (CHF=CHF) of the present disclosure.

[0026] 5. Use in semiconductor manufacturing The present disclosure includes the use of an etching gas containing 1,2-difluoroethylene (CHF=CHF) of the present disclosure for etching semiconductor manufacturing substrates.

[0027] The etching gas of the present disclosure exhibits a favorable etching rate (ER) for substrates such as Si substrates used in semiconductor manufacturing, leading to improved productivity of substrates used in semiconductor manufacturing.

[0028] While the embodiments of the present disclosure have been described above, various changes in form and details are possible without departing from the spirit and scope of the claims. [Example]

[0029] The present invention will be specifically described below using examples and comparative examples, but the present invention is not limited to these examples alone.

[0030] Plasma processing methods of examples and comparative examples (1) Etching Etching performance was evaluated using a gas containing 1,2-difluoroethylene (CHF=CHF). Deposited films (P-TEOS film, P-SiN film, PolySi film, and ACL film) were etched using a CCP (Capacitively Coupled Plasma) system and a gas containing CHF=CHF.

[0031] Etching conditions HF(High Frequency):1,000W(40MHz) LF(Low Frequency):2,000W(13.56MHz) Pressure: 20 mTorr Top temp: 80℃ Wall temp: 80℃ ESC: 40℃ Etching time: 30 seconds CHF = CHF-containing gas: 10 sccm Ar: 100sccm

[0032] [Table 1]

[0033] In the examples (etching using CHF = CHF), the plasma processing method was able to etch deposited films such as P-TEOS film, P-SiN film, PolySi film, and ACL film. The etching gas containing 1,2-difluoroethylene (CFH = CFH) of the present disclosure exhibits a favorable etching rate (ER) and is useful as an etching gas.

Claims

1. Contains 1,2-difluoroethylene (CHF=CHF), In plasma processing, the etching is for etching a deposited film selected from a silicon oxide film formed by plasma CVD using TEOS, a silicon nitride film formed by plasma CVD, a polysilicon film, and an amorphous carbon film formed by CVD. Etching gas.

2. A method for etching a substrate for manufacturing a semiconductor, using the etching gas according to claim 1.

3. 2. A semiconductor manufacturing device comprising the gas ejection portion for the etching gas according to claim 1.

4. A method for manufacturing a semiconductor, comprising etching a substrate for manufacturing a semiconductor using the etching gas according to claim 1.

5. 10. Use of the etching gas according to claim 1 for etching a substrate for semiconductor manufacturing, for semiconductor manufacturing.

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