Display device

Abstract

To provide a display device whose drive circuit is prevented from breakage, when a flexible panel is handled, or provide a display device having a simplified structure.SOLUTION: A display device comprises a first plate and a second plate, a first flexible substrate, a display portion, a second flexible substrate, and a third plate and a fourth plate. The display portion comprises a transistor, the first plate and second plate are provided spaced from each other, the third plate and fourth plate are provided spaced from each other, an area between the first plate and second plate overlaps an area between the third plate and fourth plate, the display portion has the function of bending between the first plate and second plate, and the display portion has the function of bending in a first direction.SELECTED DRAWING: Figure 9

Description

[Technical Field]

[0001] This relates to a display device. [Background technology]

[0002] In recent years, with the advancement of digital technology, textual information and image information from newspapers, magazines, etc. have been converted into electronic data. This type of electronic data is provided as a Generally, the information is displayed on a display device such as a personal computer (PC). It has the feature that the contents can be viewed.

[0003] However, the display devices that PCs and other devices have are very different from paper media such as newspapers and magazines. However, there are some differences that make it less convenient, such as being difficult to carry around.

[0004] On the other hand, flexible electronic paper has been proposed to eliminate the above-mentioned differences with paper media. (See, for example, Patent Document 1.) The display part of the flexible electronic paper is made of a transistor. When an element such as a transistor is used, a circuit for driving the transistor is provided. In this case, bending the electronic paper may damage the circuit. In addition, it is also possible that the curvature of the electronic paper may be limited by the drive circuit. [Prior art documents] [Patent documents]

[0005] [Patent Document 1] Japanese Patent Application Laid-Open No. 2003-337353 Summary of the Invention [Problem to be solved by the invention]

[0006] In one embodiment of the disclosed invention, the driving circuit is prevented from being broken when the flexible panel is handled. Another object of the present invention is to provide a display device that reduces the noise. An object of the present invention is to provide a display device with a simplified structure. [Means for solving the problem]

[0007] One embodiment of the disclosed invention is a flexible display panel having a display portion where scanning lines and signal lines intersect. a support portion for holding one end of the flexible display panel; and a signal line provided on the support portion. a signal line driving circuit that outputs a signal line; and a scanning line driving circuit that is disposed on the flexible surface of the display panel in a direction substantially perpendicular to the support portion. and a scanning line driver circuit for outputting signals to the scanning lines.

[0008] In one embodiment of the disclosed invention, a scan line driver circuit includes a plurality of circuit portions. may be display devices spaced apart from each other.

[0009] In one embodiment of the disclosed invention, a display device having a stress concentration region between a plurality of circuit portions is also provided. good.

[0010] In one embodiment of the disclosed invention, the scan line driver circuit and the signal line driver circuit include transistors. The transistors constituting the scanning line driver circuit and the transistors constituting the signal line driver circuit are Display devices with different structures may also be used.

[0011] In one embodiment of the disclosed invention, a channel layer of a transistor included in a scanning line driver circuit The channel layer of the transistor that constitutes the signal line driver circuit is a single-crystal semiconductor. The display device may be a crystalline semiconductor display device.

[0012] In one embodiment of the disclosed invention, the non-single-crystal semiconductor is amorphous silicon, microcrystalline silicon, or the like. The display device may be made of a silicon, polysilicon or oxide semiconductor.

[0013] In one embodiment of the disclosed invention, the display portion includes a transistor, and the transistor constituting the display portion The channel layers of the transistors that make up the transistors and the scanning line driving circuit are made of the same material. The display device may also be a display device that

[0014] In one embodiment of the disclosed invention, the support portion includes a battery, an amplifier, a signal line driver circuit, and a The display device may be a display device having one of a sensor, a CPU, and a memory.

[0015] In this specification, a semiconductor device is a device that can function by utilizing semiconductor characteristics. This refers generally to electro-optical devices, semiconductor circuits, and electronic devices, all of which are included in the category of semiconductor devices.

[0016] In addition, in this specification and the like, the term "display device" includes a light-emitting device and a liquid crystal display device. The light emitting element is a light emitting element that emits light by applying a current or a voltage. It includes elements whose intensity can be controlled, specifically inorganic EL (Electro L luminescence elements, organic EL elements, etc. [Effects of the Invention]

[0017] According to one aspect of the disclosed invention, a robust display device is provided that reduces damage to the drive circuit. It is possible.

[0018] According to one embodiment of the disclosed invention, the structure can be simplified and the cost of the display device can be reduced. . [Brief explanation of the drawings]

[0019] [Figure 1] 1A and 1B illustrate one embodiment of a display device. [Figure 2] 1A and 1B illustrate one embodiment of a display device. [Figure 3] 1A and 1B illustrate one embodiment of a display device. [Figure 4] 1A and 1B illustrate one embodiment of a display device. [Figure 5] 1A and 1B are diagrams illustrating one mode of a support portion of a display device. [Figure 6] 1A and 1B illustrate one embodiment of a display device. [Figure 7] 1A and 1B illustrate one embodiment of a display device. [Figure 8] 1A and 1B illustrate one embodiment of a display device. [Figure 9] 1A and 1B illustrate one embodiment of a display device. [Figure 10] 1A and 1B illustrate one embodiment of a display device. [Figure 11] 1A and 1B illustrate one mode of a display panel. [Figure 12] 1A and 1B illustrate one mode of a display panel. [Figure 13] 1A and 1B illustrate one mode of a display panel. [Figure 14] 1A and 1B illustrate one mode of a display panel. [Figure 15] 1A to 1C illustrate one mode of a transistor that can be used in a display device. [Figure 16] 1A and 1B illustrate one mode of a display panel. DETAILED DESCRIPTION OF THE INVENTION

[0020] Hereinafter, the embodiments will be described in detail with reference to the drawings. The present invention is not limited to the description of the embodiments, and does not deviate from the spirit of the invention disclosed in this specification. It will be apparent to those skilled in the art that various changes in form and detail may be made without departing from the spirit and scope of the present invention. The configurations according to the embodiments can be implemented in appropriate combinations. In the configuration of the invention to be described, the same parts or parts having similar functions are designated by the same reference numerals. The repeated explanation will be omitted.

[0021] The size, thickness of layers, and regions of each component shown in the drawings of each embodiment are not clearly indicated. The figures may be exaggerated for clarity. It will not be done.

[0022] In addition, terms such as "first," "second," and "third" used in this specification do not mean a mixture of components. It should be noted that the numbers are added to avoid confusion and are not intended to limit the number.

[0023] (Embodiment 1) In this embodiment, an example of a display device will be described with reference to the drawings.

[0024] The display device shown in this embodiment mode has a flexible display portion where scanning lines and signal lines cross each other. a display panel, a support portion for holding one end of the flexible display panel, and a signal line provided on the support portion. a signal line driver circuit for outputting a signal to the flexible surface of the display panel; and a scanning line driver circuit for outputting signals to the scanning lines.

[0025] FIG. 1 shows an example of a display device in which a support portion 4308 is provided at one end of a display panel 4311. The specific configuration of the display device will be described below with reference to FIG. FIG. 1(A) shows the display device in a horizontal position, and FIG. 1(B) shows the display device in an upright position. This shows:

[0026] The display device shown in FIG. 1 includes a display panel 4311 having a display portion 4301 and a display panel 43 11 and a scanning line driver that controls the display of the display unit 4301. signal line driver circuit 4321a and 4321b for controlling the display of the display unit 4301; 23 and has.

[0027] The scanning line driver circuits 4321a and 4321b are provided in the display panel 4311, and the signal line driver circuits The passage 4323 is provided inside the support portion 4308 .

[0028] The display panel 4311 can be made flexible. In this case, the display panel 4311 is made of plastic. A pixel circuit constituting a display portion 4301 and a scanning line driver circuit 4302 are formed on a flexible substrate such as a glass substrate. 321a and 4321b should be provided.

[0029] The support portion 4308 is configured to be less likely to bend (higher rigidity) than the display panel 4311. As an example, it is preferable that the housing constituting the support portion 4308 is 11 can be made of thicker plastic or metal. In this case, the display device is It is possible to configure the portion other than the holding portion 4308 to bend (curve).

[0030] The location of the support portion 4308 is not particularly limited, but as an example, A support 4308 may be provided along one end of the 11. For example, as shown in FIG. When the display panel 4311 is rectangular, it is necessary to fix the display panel 4311 along a predetermined side (or fix the side). In this case, the rectangular shape does not mean that the corners are rounded. This also includes cases where

[0031] The signal line driver circuit 4323 is provided inside the support portion 4308. For example, 8 is provided in a hollow columnar or cylindrical housing, and the hollow portion is provided with a signal line driver circuit 432 3 can be provided inside the support portion 4308. This prevents damage to the signal line driver circuit 4323 caused by bending the display panel 4311. do.

[0032] As shown in FIG. 1, the scanning line driving circuits 4321a and 4321b are connected to the display panel 431. 1, it is preferable to provide them at both ends in a direction roughly parallel to the support portion 4308. Therefore, the scanning line driver circuit and the signal line driver circuit are provided in one place (for example, the support portion 4308). In comparison with the conventional case, the wiring can be reduced and the structure can be simplified.

[0033] In addition, the scanning line driver circuits 4321a and 4321b and the pixel circuits that constitute the display portion 4301 are By forming the scanning line driver circuit 4321a on a flexible substrate in the same process, This allows bending of 4321b and reduces costs.

[0034] The pixel circuits and scanning line driver circuits 4321a and 4321b that constitute the display unit 4301 are The element can be formed of a thin film transistor or the like. High-speed circuits such as 4323 are formed using semiconductor substrates such as silicon or SOI substrates. The IC is attached to a support part. It can be provided inside 4308.

[0035] In this way, an IC on which a circuit for high-speed operation such as a signal line driver circuit is formed is placed inside the support part. The scanning line driver circuit and the pixel circuit that constitutes the display unit are mounted on a flexible substrate by thin film transistors. By forming the signal line driver circuit and the scanning line driver circuit with an IC, Compared to the case where the display panel is bent, the bending of the display panel is facilitated and the I caused by the bending of the display panel is reduced. The destruction of C can be suppressed, and the cost can be further reduced. By providing the display panel at the end of the display panel in a direction approximately perpendicular to the support portion, the wiring can be easily routed. This can prevent this and simplify the structure.

[0036] In addition, FIG. 1 shows a case where the scanning line driver circuits are formed at both ends of the display panel 4311. However, only one end (either the scanning line driver circuit 4321a or the scanning line driver circuit 4321b) It is also possible to provide a configuration in which only one of the two is provided.

[0037] This embodiment mode can be implemented by being appropriately combined with the configurations described in other embodiments. is.

[0038] (Embodiment 2) In this embodiment, a specific configuration of the display device shown in FIG. 1 will be described with reference to the drawings. The configuration shown in this embodiment is common to the first embodiment in many parts. Therefore, in the following, we will omit the explanation of the overlapping parts and will focus on the differences in detail. will be explained.

[0039] First, an example of a specific configuration of the display device will be described with reference to FIG. FIG. 2(A) shows a plan view of the display device, and FIG. 2(B) shows a cross section taken along line A1-B1 of FIG. 2(A). FIG. 2(C) shows a detailed schematic diagram of the cross section.

[0040] In the display device shown in FIG. 2, the support portion 4308 is formed of a hollow housing. A signal line driver circuit 4323 is provided in the IC. The IC is formed of silicon or the like, and the IC is provided inside the support portion 4308. It can be formed using a semiconductor substrate, an SOI substrate, or the like. Other circuits (eg, CPU, memory, etc.) can be provided on the IC.

[0041] In addition, in FIG. 2, the IC provided inside the support portion 4308 is mounted on a TAB (Tape Auto) FPC (Flexible Printed Circuit) is manufactured using the comat d Circuit). More specifically, the display unit 4301 is A signal line driver circuit 4323 for controlling the signal line is provided on an FPC 4324. It is electrically connected to the printed circuit board 4325.

[0042] As shown in FIG. 2, the printed circuit board 4325 is provided in contact with the support portion 4308. can be done.

[0043] When the signal line driver circuit 4323 is provided on the FPC 4324, stress is concentrated on the display panel 4311. It is preferable to provide a middle region 4326. By providing a stress concentration region 4326 in the display panel, This reduces the stress applied to the FPC 4324 when the display panel 4311 is bent. Therefore, damage to the signal line driver circuit 4323 provided on the FPC 4324 can be suppressed. .

[0044] The stress concentration area is the area where the deformation of the material due to the cut, etc., or the bending or extension due to the attachment of the material, etc. This refers to the area where stress is concentrated, which is formed due to the change in strength relative to the bending. By providing a notch (recess, groove) in the portion of the display panel 4311 that is to be folded, This allows the formation of stress concentration areas 4326.

[0045] For example, a display panel 4311 is formed using an element substrate 4331 and a sealing substrate 4332. A cutout may be provided in one or both of the element substrate 4331 and the sealing substrate 4332. In FIG. 2, a stress concentration area can be formed by providing a cut portion in the sealing substrate 4332. In the structure shown here, the element substrate 433 1 includes a pixel circuit for driving a display portion 4301 and scanning line driving circuits 4321a and 4321b. These circuits can be electrically connected to the FPC4324.

[0046] In addition, the display unit 4301 has pixels arranged (arranged) in a matrix, and the scanning lines 43 The pixel arrangement is vertical or horizontal. In the horizontal direction, pixels may be arranged in a straight line or in a jagged line. This includes cases where the color is arranged in stripes, or three color elements. When the dots are arranged in a delta arrangement, the scanning line 4361 and the signal Route 4362 will be located here.

[0047] The stress concentration area 4326 is provided along the direction in which the display panel 4311 is to be bent. For example, in FIG. 2A, the display panel 4301 may be aligned in a direction substantially parallel to the support portion 4308. By providing a cutout from the top to the bottom of the display panel 4311, The bending direction can be controlled (the display panel 4311 can be selected in a direction perpendicular to the support part 4308). The signal line driver circuit 4 is mounted on the FPC4324. 323 destruction can be suppressed.

[0048] It should be noted that the stress concentration area 4326 can be provided inside or outside the support portion 4308. For example, when the support portion 4308 is provided close to the display panel 4311, The stress concentration area 43 is formed on the outside of the support part 4308 (for example, between the support part 4308 and the display part 4301). It is preferable to provide 26.

[0049] Next, the configuration of a display device different from that shown in FIG. 2 will be described with reference to FIG. 3. 3(B) shows a cross section between A2 and B2 in FIG. 3(A), and FIG. 3(C) shows a plan view of the display device. ) shows a detailed schematic diagram of the cross section.

[0050] Figure 3 shows a display panel 4311 using the COG (Chip On Glass) method. This shows the case where an IC in which a signal line driver circuit 4323 is formed is mounted. A signal line driver circuit 4323 for controlling the display portion 4301 is an element constituting the display panel 4311. It is provided on a substrate 4331, and a signal line driver circuit 4323 is printed via an FPC 4324. It is electrically connected to the substrate 4325 .

[0051] As shown in FIG. 3, when a signal line driver circuit is provided on a display panel, the display It is preferable to provide a stress concentration area 4326 on the display panel 4311. In this case, the stress concentration The region 4326 is a region different from the region where the signal line driver circuit 4323 is provided (the region where the signal line driver circuit For example, the insulating film 4332 is provided on the sealing substrate 4332 side. By doing so, when the display panel 4311 is bent, the signal line driver circuit 4323 This can reduce the stress generated by the signal line driver circuit 4323, thereby preventing damage to the signal line driver circuit 4323.

[0052] Next, the configuration of the display device different from that of FIGS. 2 and 3 will be described with reference to FIG. 4. 4(B) shows a cross section taken along line A3-B3 of FIG. 4(A), and FIG. 4(C) shows a detailed schematic diagram of the cross section.

[0053] In FIG. 4, an IC on which a signal line driving circuit and other circuits are formed is mounted on a printed circuit board. This shows the case where the display board and the display panel are connected using an FPC. A signal line driver circuit 4323 for controlling the unit 4301 is provided on a printed circuit board 4327. The display panel 4311 and the signal line driver circuit 4323 are electrically connected via an FPC 4324. are.

[0054] In FIG. 4, the display panel 4311 can be folded using the FPC 4324. The display panel 4311 may be configured without a stress concentration area.

[0055] Next, an example of the structure of the support portion 4308 and a circuit that can be provided in the support portion 4308 will be described. This will be described with reference to FIG.

[0056] In FIG. 5, the display control unit 200 including the signal line driving circuit is built into the support unit 4308. These circuits are formed using semiconductor substrates such as silicon or SOI substrates. It can be formed using an IC.

[0057] The display control unit 200 includes a CPU 201, a storage unit 203, a power supply unit 205, and a power supply circuit 207. , a video signal generating circuit 215, a signal line driving circuit 4323, an operation unit 219, etc. Each component can be connected via an interface, etc. In addition, the display control unit 200 is electrically connected to the display panel 4311. 4308, the operation unit 219 is attached to the support portion 4308. It can also be provided on 311.

[0058] The CPU 201 controls the overall operation of the display device.

[0059] The data input unit 211 receives information to be displayed on the display unit 4301 from an external device. The data input unit 211 has an antenna 216 for transmitting and receiving data to and from an external device. In this case, the data input unit 211 may receive data received by the antenna 216 and stored data. The external memory 213 has a function of transferring data stored in the external memory 213 to the internal memory 209. do.

[0060] The storage unit 203 includes an internal memory 209, a data input unit 211, and an external memory 213. The internal memory 209, the data input unit 211, and the external memory 213 The information to be displayed on the display unit 4301 and the program for operating the display device are recorded in the This can be done.

[0061] The internal memory 209 generates a video signal based on signals from the power supply unit 205, the operation unit 219, etc. The CPU 201 processes the signal output to the circuit 215 and / or the power supply circuit 207. The program for the data input unit 211 and the data input unit 212 are stored in the storage unit 214. An example of the internal memory 209 is a DRAM (Dynamic Random Access Memory). ess Memory), SRAM (Static Random Access Me memory), Mask ROM (Read Only Memory), PROM (Prog It is composed of a hard disk drive (HDD), a rammable read-only memory (RAM), etc.

[0062] The external memory 213 may be a storage medium such as an IC card or a memory card.

[0063] The power supply unit 205 is composed of a secondary battery, a capacitor, etc. Lithium batteries, preferably lithium polymer batteries using gel electrolytes, lithium ion batteries Of course, any rechargeable battery will do, Nickel-metal hydride battery, nickel-cadmium battery, organic radical battery, lead-acid battery, secondary air battery, nickel The capacitor may be a rechargeable battery such as a zinc battery or a silver-zinc battery. Using electric double layer capacitors, lithium ion capacitors, and other large-capacity capacitors The capacitor does not deteriorate much even when it is charged and discharged many times, and has fast charging characteristics. The shape of the power supply part 205 may be a sheet, a column, a prism, or the like. The shape may be selected appropriately from a plate-like, coin-like, etc.

[0064] Furthermore, the power supply unit 205 may be configured to supply power wirelessly. Therefore, an antenna may be provided on the power supply unit 205.

[0065] The power supply circuit 207 controls the display panel 4311 to display or hide the display in accordance with the control of the CPU 201. This is a circuit for controlling the power supply to the display element to display the image.

[0066] The operation unit 219 can be provided with a keyboard, operation buttons, etc. When the display panel 4311 is provided with the above, the display portion 4301 is used as a touch display. The display unit can function as an operation unit.

[0067] In FIG. 5, the display control unit 200 is built into the support unit 4308. A so-called power device such as a switching power supply or a DC-DC converter may be provided.

[0068] In addition, in the display device shown in FIG. 5, the power supply and the display can be controlled by operating the operation unit 219. In addition, the display unit 4301 can be used as a touch display. The operation may be performed by touching the portion 4301 with a finger or an input pen.

[0069] In this way, by incorporating the display control unit 200 into the support unit 4308, The display device can be protected by the housing, and can be made thinner.

[0070] In the first and second embodiments, the display panel 4311 includes a scanning line driver circuit 4321a , 4321b are provided along the display portion 4301, but the present invention is not limited to this.

[0071] For example, as shown in FIG. 6A, in a display panel 4311, a scanning line driver circuit 432 1a and 4321b are provided so as to be spaced apart from the support portion 4308 compared to the display portion 4301. Generally, the elements that constitute the scanning line driver circuits 4321a and 4321b are Since the elements constituting the basic circuit are concentrated, the display panel 4311 can be folded. By providing the scanning line driving circuits 4321a and 4321b at a distance from the area where the scanning lines Damage to the drive circuits 4321a and 4321b can be suppressed.

[0072] As shown in FIGS. 6B and 6C, the scanning line driving circuits 4321a and 4321b are Each of the circuits can be divided into a plurality of circuit sections, and the plurality of circuit sections can be spaced apart from one another. As a result, even when the display panel 4311 is curved, the scanning line driver circuit 4321 This reduces the stress applied to the scanning line driving circuits 4321a and 4321b, preventing damage to the scanning line driving circuits 4321a and 4321b. FIG. 6B shows the scanning line driver circuits 4321a and 4321b. The scanning line driver circuits 4321a and 4321b are provided separately. Although the figure shows a case where each circuit is divided into four circuit parts, the number of divisions is not limited to this. I can't.

[0073] Also, as shown in FIG. 6(D), in the display panel 4311, only one end (scanning The scanning line driver circuit 4321a and the scanning line driver circuit 4321b are provided. This makes it possible to narrow the frame of the display device.

[0074] This embodiment mode can be implemented by being appropriately combined with the configurations described in other embodiments. is.

[0075] (Embodiment 3) In this embodiment, a display device having a flexible display panel is used in a curved state. An example of the effects of the above embodiment will be described with reference to FIGS. 7 to 10. .

[0076] First, FIG. 7(A) shows a front plan view of the display device when the user uses it, and FIG. 7(B) shows a front plan view of the display device when the user uses it. ) shows and explains a top plan view of the display device when the user uses it.

[0077] The display device shown in FIG. 7A includes a display panel 4311 and a support portion 4308. The display unit 4311 has a display unit 4301, which outputs a scanning signal to the display unit 4301. a scanning line driver circuit 4321 that supplies image signals to the display portion 4301; The display is controlled by the user's hand 4323. 350 is also shown gripping the support part 4308. In the front plan view shown in (A), the line of sight when viewing the top plan view shown in FIG. 7(B) is also It is noted.

[0078] The top plan view shown in FIG. 7B shows the display panel 4311 and the support portion 4308. As shown in FIG. 7(B), when a user uses the display device with his / her hand 4350, the flexible surface The display panel has a bent portion (hereinafter referred to as bent portion C) in the range indicated by the arrow C in the figure, and a bent portion (hereinafter referred to as bent portion C) in the range indicated by the arrow D in the figure. A non-bending portion (hereinafter referred to as non-bending portion D) is formed in the range indicated by the arrow.

[0079] In FIG. 7B, as an example, the first display panel 4311 has a bent portion C and a non-bent portion D. The side close to the support part 4308 is the bent part C, and the side away from the support part 4308 is the non- The positions of the bent portion C and the non-bent portion D depend on the configuration of the support portion 4308 and The way the display panel bends varies depending on the material of the substrate that makes up the display panel. Therefore, the bending portion C and the non-bending portion D of the display panel 4311 are The side away from the support portion 4308 may be the bent portion C, and the side close to the support portion 4308 may be the non-bent portion D. do.

[0080] In addition, since the display device has a structure in which the display panel is fixed by the support portion 4308, The direction in which 4308 extends (arrow 7001 pointing towards the back (or towards the front) in Figure 7(B)) and the vertical The display panel 4311 has a bent portion C and a non-bent portion D in the perpendicular direction (arrow 7002 in FIG. 7B). Therefore, by arranging the signal line driver circuit 4323 as described above, This allows bending in a direction perpendicular to the support portion 4308 and prevents breakage. The scanning line driving circuit 4321 is connected to the display panel 4311 in a direction substantially parallel to the support portion 4308. By providing it at the edge, it can be manufactured using the same process as the display section, reducing costs. This allows for easier wiring to the display unit compared to the case where the support portion 4308 is provided. The bent portion C and the non-bent portion D may be formed in plural or alternately. Alternatively, a stress concentration region may be provided on the display panel, and the bent portion C and the non-bent portion D may be artificially formed. It may be formed.

[0081] Next, in FIGS. 8A to 8C, similar to FIG. 7A, the front view when the display device is used is shown. The plan view shows the arrangement of the scanning line driving circuit 4321 with respect to the bent portion C and the non-bent portion D. I will explain.

[0082] In FIG. 8(A), the side close to the support portion 4308 is the bent portion C, and the side away from the support portion 4308 is the bent portion C. The side where the bent portion is formed is described as a non-bent portion D. It is provided on the non-bending part D on the side away from the support part 4308. The scanning signal is supplied to the pixel TFT 4352 via a wiring extending from the scanning line driving circuit 4321. This can be done by routing the signal to each scanning line of the scanning line driver circuit 4321. The supply of control signals such as clock signals for the image forming apparatus is performed by a video signal generating circuit in the support portion 4308. The wiring for electrical connection between circuits is made of fine metal films, etc. The semiconductor film of the transistor that constitutes the scanning line driver circuit is made of silicon. Metal films are made of semiconductor materials such as metal films. Metal films have superior ductility compared to semiconductor materials, and are therefore more flexible when bent. The damage is small. Therefore, the wiring connected to the scanning line driving circuit is placed at the bent portion C. and a transistor constituting a scanning line driving circuit is disposed at the non-bending portion D. This reduces damage to the semiconductor film of the transistor due to bending. As a result, by disposing the scanning line driver circuit 4321 as shown in FIG. When using a display device with the 4350, damage to the circuit can be suppressed.

[0083] In FIG. 8(B), the bent portion C and the non-bent portion B are arranged from the side close to the support portion 4308 to the side away from the support portion 4308. D are alternately provided. In the non-bending portion D, the driving circuit is divided into a plurality of parts, which are spaced apart from each other. The supply of a scanning signal to the pixel TFT 4352 in the display section is performed by the scanning line driving circuit 432. This can be achieved by routing wiring extending from the scanning line driver circuit 4321. The control signals such as clock signals for operating the image display are extended from the image signal generating circuit in the support part 4308. Also, the scanning line driver circuit is connected to the flip-flops and other pulses. Signals propagate between the signal generating circuits through wiring. The wiring for this purpose is formed by microfabrication of metal films, etc., and constitutes the scanning line driving circuit. The semiconductor film of a transistor is made of a semiconductor material such as a silicon film. Compared to the other materials, it has excellent ductility and is less damaged by bending. Wiring connected to the scanning line drive circuit is arranged, and the scanning line drive circuit is constructed at the location corresponding to the non-bending portion D. By arranging a transistor that forms a In addition, in FIG. 8(B), the driving circuit is divided into multiple parts, and the driving circuit is They are spaced apart, which makes it possible to distribute the stress applied to the scanning line driving circuit when it is bent. As a result, by arranging the scanning line driver circuit 4321 as shown in FIG. When using the display device with the hand 4350, it can more effectively prevent damage to the circuit. do.

[0084] In FIG. 8B, the scanning line driver circuit 4321 is provided above and below the display portion. 4321a, and a scanning line driver circuit 4321b are arranged to be redundant, or a scanning signal In FIG. 8(C), the function of outputting the The diagram shows the configuration arranged above and below the display panel. The scanning line driving circuit 4321a and the scanning line driving circuit 4321b are arranged above and below each other to supply the signal. This allows reducing the number of pulse signal generating circuits such as flip-flops that constitute the scanning line driving circuit. This prevents damage to the circuit when the user uses the display device by hand (4350). This can be done.

[0085] 8B and 8C show a specific example, and the area where the bending portion C is located is shown. Regarding the advantages of arranging the scanning line driving circuit in the non-bending area D without arranging the scanning line driving circuit, This configuration distributes the stress applied to the scanning line driving circuit when the display is bent. This can prevent damage to the circuit when the user uses the display device by hand 4350. This can be done.

[0086] Next, as shown in FIGS. 8(B) and 8(C), the scanning line driving circuit is divided into a plurality of parts, and the parts are spaced apart from each other. When the bending portion C and the non-bending portion D are artificially formed in the display panel, An example of providing a force concentration area will be described with reference to Figs. 9 and 10. Fig. 9(A) shows a display device. 9(B) and 9(C) are examples of cross-sectional views between E1 and F1 in FIG. 9(A). FIG. 10(A) shows a plan view of the display device, and FIGS. 10(B) and 10(C) show is an example of a cross-sectional view taken along line E2-F2 in FIG. 10(A).

[0087] In FIG. 9A, a display panel 4311, a support portion 4308, a display portion 4301, a scanning line driver circuit The scanning line driver circuit 4321 has two The circuit sections are shown separated from each other by wiring 920. The force concentration region 921 is preferably formed so as to overlap with the wiring 920. 9 shows a cross section perpendicular to the support portion, and the stress concentration area overlapping with the wiring 920. In the region 921, a notch 922a is provided in the sealing substrate 923, and a notch 922b is provided in the element substrate 924. As shown in FIG. 9C, the element substrate 92 4 and a reinforcing plate 925 is attached onto the scanning line driver circuit 4321 of the sealing substrate 923. The cutout portion 922a and the cutout portion 922b may be formed. The portion 922a and the notch portion 922b may be provided parallel to the longitudinal direction of the support portion 4308. However, it may be configured to be provided only in some areas.

[0088] The stress concentration area refers to deformation of the material due to cuts, bending, stretching, etc. due to attachment of the material. The term refers to an area of ​​concentrated stress formed by a change in strength relative to the

[0089] The division of the scanning line driving circuit means that the circuit elements such as TFTs and wiring are mixed together to form a repeated layout. This refers to the state in which the out area is divided by the area allocated for wiring routing. cormorant.

[0090] 10A, similarly to FIG. 9A, the display panel 4311, the support portion 4308, the display panel 4311, the display panel 4312, the display panel 4313, the display panel 4314, the display panel 4315, the display panel 4316, the display panel 4317, the display panel 4318, the display panel 4319 ... 43 shows a display portion 4301, a scanning line driver circuit 4321, and a signal line driver circuit 4323. The scanning line driver circuit 4321 is divided into four circuit sections, which are separated from each other by wiring 920. The stress concentration region 921 is formed so as to overlap with the plurality of wirings 920. FIG. 10(B) shows a cross section in a direction perpendicular to the support portion. In the stress concentration region 921 overlapping with the sealing substrate 920, a plurality of notches 922a are formed in the sealing substrate 923. For example, a plurality of notches 922b may be provided in the element substrate 924. As shown in FIG. 10C, the scanning line driver circuit 43 of the element substrate 924 and the sealing substrate 923 By attaching a reinforcing plate 925 on the surface of the substrate 21, the plurality of cutouts 922a and the plurality of cutouts 922b are formed. It is also possible to form a plurality of notched portions 922a and a plurality of notched portions 922b. The recessed portion 922b may be provided parallel to the longitudinal direction of the support portion 4308, or may be provided only in a part of the support portion 4308. It may also be configured so that

[0091] The number of divisions of the scanning line driving circuit shown in FIGS. 9 and 10 is an example for the purpose of explanation, and It may be divided into any number of parts.

[0092] As described above, with the configuration of this embodiment, when using the display device, the scanning line driving circuit Furthermore, according to the configuration of this embodiment, the damage to the display panel can be more effectively prevented. However, by providing a stress concentration area in advance using a cutout or the like, the scanning line driving circuit can be more effectively This can suppress damage to the

[0093] This embodiment mode can be implemented by being appropriately combined with the configurations described in other embodiments. is.

[0094] (Fourth embodiment) In this embodiment mode, an example of a display panel provided in a display device will be shown. A display panel having a pixel can be applied, and it can be either a passive matrix type or an active matrix type. It can also be a risk type.

[0095] Display panels include electronic paper and light-emitting display panels (EL (electroluminescence) ) panel), liquid crystal display panel, etc. can be used. The panel is in a sealed state, and a connector, such as FPC (Flexible Printed Circuit) TAB (Tape Automated Bond) ing) tape or TCP (Tape Carrier Package) is attached The signal line driver circuit is an IC that is electrically connected to an external circuit. Alternatively, the display panel may be directly mounted using a COG (Chip On Glass) method. .

[0096] The display panel 4311 may be a double-sided display type that displays on both sides or a single-sided display type that displays on only one side. The double-sided display panel may be a double-side emission type display panel. Alternatively, a single-side emission type display panel may be attached to the backlight. Alternatively, two liquid crystal display panels sandwiching a thin EL panel may be used.

[0097] Examples of double-sided display panels that can be used as the display panel 4311 are shown in FIGS. 11(A) to 11(C). In Figures 11(A) to 11(C), the arrows indicate the light emission direction (visible side). do.

[0098] FIG. 11A shows a display panel 431 in which a display element 102 is sandwiched between a substrate 100 and a substrate 101. 3, and a first display unit 4302 is provided on the substrate 100 side, and a second display unit 4310 is provided on the substrate 101 side. The display element 102 is provided with a first display portion 4302 and a second display portion 4303. Since the display element 310 is displayed, the substrates 100 and 101 are translucent. It is preferable to use an EL element, which is a self-luminous light-emitting element, for the display panel 4313. When using light incident on the display element 102, a liquid crystal display element or an electrophoretic display element is used. It can also be used.

[0099] FIG. 11B shows a single-sided display including a display element 114 sandwiched between a substrate 110 and a substrate 112. A single-sided display panel including a panel, and a display element 115 sandwiched between a substrate 111 and a substrate 113. The display panel 4313 is a laminate of the first display unit 4302 on the substrate 110 side and the second display unit 4303 on the substrate 110 side. The second display unit 4310 is provided on the side 11. The first display unit 4310 is provided on the side 11. 4302 is displayed, and the second display portion 4310 is displayed by the display element 115. The plate 110 and the substrate 111 are translucent. On the other hand, the substrates 112 and 113 are translucent. The single-sided display panels do not necessarily have to have a reflectivity, but may have a reflectivity. The substrate 112 and the substrate 113 may be bonded together by an adhesive layer. Only one of the substrates 113 may be used.

[0100] It is preferable to use EL elements for the display elements 114 and 115. When light incident on 4313 is used, the display element 114 and the display element 115 are liquid crystal displays. In order to improve the light extraction efficiency, a single-sided display element or an electrophoretic display element can also be used. It is preferable to use a reflective display panel as the surface display type display panel.

[0101] A backlight may be provided between the light-transmitting liquid crystal display panels to form a display panel 4313. 11(C) is a light-transmitting liquid crystal display including a display element 124 sandwiched between a substrate 120 and a substrate 122. A display panel and a light-transmitting liquid crystal display including a display element 125 sandwiched between a substrate 121 and a substrate 123. The display panel 4313 is made by stacking the LCD panel with the backlight 126 as the light source. A first display unit 4302 is provided on the substrate 120 side, and a second display unit 4310 is provided on the substrate 121 side. The first display unit 430 is illuminated by the light from the backlight 126 and the display element 124. 2 is displayed on the second display unit 431 by the light of the backlight 126 and the display element 125. Since 0 is displayed, the substrates 120, 121, 122, and 123 are translucent. do.

[0102] The single-sided display panel and the backlight may be bonded together using an adhesive layer. Alternatively, only one of the substrates 122 and 123 may be used. As for 126, if a thin EL panel is used, the display panel 4313 can be made thinner. preferable.

[0103] In the case of a single-sided display panel, a non-transparent or reflective housing is provided on the side where the display section is not provided. Providing such a film is preferable because it can improve the strength of the display panel.

[0104] One embodiment of the display panel will be described with reference to FIGS. 12 to 14 and 16. 12 to 14 and 16 correspond to cross-sectional views taken along line MN in FIG. 4(A). 4 and 16 show a display device having a display portion 4301 having pixel circuits and a scanning line driver circuit 4321a. This is an example in which an FPC 4324 is attached to a display panel 4311, and an element substrate 4331 The display portion 4301 and the scanning line driver circuit 4321a provided thereon are covered with a sealant 4005. The semiconductor device is sealed with a sealing substrate 4332 .

[0105] As shown in FIGS. 12 to 14 and 16, the display panel 4311 has a connection terminal electrode 401 5 and a terminal electrode 4016, and the connection terminal electrode 4015 and the terminal electrode 4016 are F The terminal of the PC 4324 is electrically connected via an anisotropic conductive film 4019 .

[0106] The connection terminal electrode 4015 is formed from the same conductive film as the first electrode layer 4030. 016 is the same as the source electrode layer and drain electrode layer of the thin film transistors 4010 and 4011. The same conductive film is used.

[0107] As shown in FIG. 4, a single crystal semiconductor film or a polycrystalline semiconductor film is formed on a separately prepared substrate. The signal line driver circuit 4323 formed of a film is mounted by an FPC and is placed inside the support portion 4308. The signal line driver circuit 4323, the scanning line driver circuit 4321a, and the display portion 430 Various signals and potentials applied to 1 are supplied from FPC4324.

[0108] The method of connecting the signal line driver circuit 4323 is not particularly limited, and may be a COG method. , a wire bonding method, a TAB method, or the like can be used.

[0109] The display portion 4301 and the scanning line driver circuit 4321a provided on the element substrate 4331 are 12 to 14 and 16, the display unit 430 1 and a thin film transistor 4010 included in the scanning line driver circuit 4321a. The thin film transistors 4010 and 4011 are shown as examples. Layers 4020 and 4021 are provided. Note that the insulating film 4023 functions as a base film. It is an insulating film.

[0110] The thin film transistors 4010 and 4011 are not particularly limited and various thin film transistors can be used. 12 to 14 and 16, thin film transistors 4010 and 4012 are shown. As an example, a bottom-gate inverted staggered thin film transistor is used. The transistors 4010 and 4011 are of the channel etch type, but have a channel protection layer on the semiconductor layer. A channel protection type inverted staggered thin film transistor provided with a film may be used.

[0111] The thin film transistor 4010 provided in the display portion 4301 is electrically connected to a display element. The display element is not particularly limited as long as it can display, and various display elements can be used. A child can be used.

[0112] Electronic paper can be used as a display panel. The method of displaying the image is to use an electric field, a magnetic field, light, or heat. The change in the display medium is due to changes in shape or position. There are many methods using various combinations of the use of physical changes. For example, twist Ball type, electrophoretic type, powder type (also called toner display), liquid crystal type Examples include:

[0113] In Figures 12 and 16, an active matrix type electronic paper is used as the display panel 4311. Here is an example of how electronic paper is used. It has the same readability as paper and consumes less power than other display panels. In addition, it has the advantage of being possible to make it thin and light.

[0114] 12(A)(B) and 16 show an example of an active matrix type electronic display panel. Show paper.

[0115] The electronic paper in FIG. 12(A) is an example of a display device that uses a twisting ball display method. The twist ball display method uses electrodes that use spherical particles painted in black and white as display elements. By placing the electrodes between the layers and creating a potential difference between the layers, the orientation of the spherical particles can be controlled. This is a method for displaying.

[0116] A first electrode layer 4030 connected to the thin film transistor 4010 and a sealing substrate 4332 The second electrode layer 4031 has a black area 4615a and a white area 4615b. and a spherical particle 4613 containing a cavity 4612 filled with liquid around it. The spherical particles 4613 are filled with a filler 4614 such as a resin. The second electrode layer 4031 corresponds to a common electrode (counter electrode). and electrically connected to each other.

[0117] Also, instead of the twist ball, an electrophoretic element can be used. An example of using an electrophoretic element as a detector is shown in FIG. 12(B). negatively charged black particles 4715a as the first particle and positively charged white particles as the second particle. Microcapsules 4713 with a diameter of approximately 10 μm to 200 μm are used. There are.

[0118] Microcapsules 47 provided between the first electrode layer 4030 and the second electrode layer 4031 13, when an electric field is applied by the first electrode layer 4030 and the second electrode layer 4031, White particles 4715b and black particles 4715a move in opposite directions, displaying white or black. The display element that applies this principle is the electrophoretic display element. The display element has high reflectivity, so auxiliary lights are not required, and it consumes little power and is dim. The display can be recognized even in a location where power is not supplied to the display. Even if the image is displayed, it is possible to maintain the image once it has been displayed, so the display panel can be Even if the user moves away from the camera, the displayed image can be saved.

[0119] The first particles and the second particles contain a dye and do not move in the absence of an electric field. In addition, the first particles and the second particles are different in color (including colorless).

[0120] The microcapsules dispersed in a solvent are called electronic ink. The electronic ink can be printed on surfaces such as glass, plastic, fabric, and paper. Color display is also possible by using color filters or particles containing pigments.

[0121] The first particles and the second particles in the microcapsules may be made of a conductive material, an insulating material, Semiconductor materials, magnetic materials, liquid crystal materials, ferroelectric materials, electroluminescent materials, A material selected from magnetochromic materials, magnetophoretic materials, or a composite material thereof Just use it.

[0122] It is also possible to use electronic liquid powder (registered trademark) as a powder system. An example of using electronic liquid powder as a first electrode layer 4030 and a second electrode layer 403 1, and a positively charged black liquid powder 4815a is placed in the space 4812 defined by the rib 4814. and negatively charged white liquid powder 4815b. Space 4812 is filled with air.

[0123] When an electric field is applied by the first electrode layer 4030 and the second electrode layer 4031, the black powder flows. The body 4815a and the white powder 4815b move in opposite directions, displaying white or black. Colored powders such as red, yellow, and blue may be used as the liquid powder.

[0124] In addition, the display element is a light-emitting element (EL element) that uses electroluminescence. The light-emitting element using electroluminescence may be made of an organic compound. Generally, the former are organic EL elements, and the latter are inorganic compounds. are called inorganic EL elements.

[0125] In an organic EL element, electrons and holes are released from a pair of electrodes by applying a voltage to the light-emitting element. are injected into the layers containing the light-emitting organic compounds, causing a current to flow. The recombination of the electrons and holes creates an excited state in the light-emitting organic compound. The excited state is then converted to the ground state, at which point light is emitted. Such a light-emitting element is called a current-excited light-emitting element.

[0126] Inorganic EL elements are divided into dispersion-type inorganic EL elements and thin-film-type inorganic EL elements depending on the element structure. Dispersion-type inorganic EL elements have a light-emitting layer in which particles of a light-emitting material are dispersed in a binder. The emission mechanism is a donor-acceptor interaction that utilizes the donor and acceptor levels. Thin-film inorganic EL devices sandwich the light-emitting layer between dielectric layers. Furthermore, this structure is sandwiched between electrodes, and the light emission mechanism utilizes the inner-shell electron transition of metal ions. In this example, the light-emitting element is an organic EL element. do.

[0127] The light emitting element only needs to have at least one of the pair of electrodes transparent in order to extract light. Then, a thin film transistor and a light emitting element are formed on the substrate, and light is emitted from the surface opposite to the substrate. Top emission, bottom emission, and both the substrate side and the opposite side of the substrate. There are light emitting elements with a double-sided emission structure that emits light from both sides, and light emitting elements with any emission structure can be used. It is possible.

[0128] FIG. 13 shows an example in which a light-emitting display panel (EL panel) is used as the display panel 4311. The light-emitting element 4513 is a thin film transistor 401 provided in the display portion 4301. 0. The light-emitting element 4513 is configured with a first electrode layer 4030, an electrode layer 4031, and a The structure is a laminate of a light emitting layer 4511 and a second electrode layer 4031, but is not limited to the structure shown. The structure of the light emitting element 4513 is determined according to the direction of light extracted from the light emitting element 4513. It can be changed as appropriate.

[0129] The partition wall 4510 is formed using an organic resin film, an inorganic insulating film, or organic polysiloxane. In particular, a photosensitive material is used to form an opening on the first electrode layer 4030, and the sidewall of the opening It is preferable to form the inclined surface so that the inclined surface has a continuous curvature.

[0130] The electroluminescent layer 4511 may be composed of a single layer or a plurality of layers stacked. It doesn't matter whether it's done or not.

[0131] The second electrode layer is formed to prevent oxygen, hydrogen, moisture, carbon dioxide, and the like from entering the light-emitting element 4513. A protective film may be formed on the insulating film 4031 and the partition wall 4510. The protective film may be a silicon nitride film, A silicon nitride oxide film, a DLC film, etc. can be formed. A filler 4514 is provided in the space sealed by the plate 4332 and the sealant 4005. In this way, the container is airtight and protected from exposure to the outside air, with minimal degassing. Packaged with protective film (lamination film, UV curing resin film, etc.) or cover material It is preferable to enclose the substance.

[0132] Filler 4514 can be an inert gas such as nitrogen or argon, or an ultraviolet curing resin or Thermosetting resin can be used, and PVC (polyvinyl chloride), acrylic, polyimide Mido, epoxy resin, silicone resin, PVB (Polyvinyl Butyral) or EVA (Elastomer) For example, nitrogen may be used as a filler. stomach.

[0133] If necessary, a polarizing plate or a circular polarizing plate (including an elliptical polarizing plate) may be provided on the light-emitting surface of the light-emitting element. Optical films such as retardation plates (λ / 4 plates, λ / 2 plates) and color filters may be provided as appropriate. In addition, an anti-reflection film may be provided on the polarizing plate or the circular polarizing plate. Anti-glare treatment can be applied to diffuse reflected light and reduce glare.

[0134] FIG. 14 shows an example in which a liquid crystal display panel is used as the display panel 4311. In FIG. The liquid crystal element 4013, which is a display element, includes a first electrode layer 4030, a second electrode layer 4031, and a and a liquid crystal layer 4008. The liquid crystal layer 4008 is sandwiched between two layers that function as alignment films. Insulating films 4032 and 4033 are provided. The second electrode layer 4031 is covered with a sealing substrate 4332. The first electrode layer 4030 and the second electrode layer 4031 are disposed on the liquid crystal layer 4008 side. The structure is such that the layers are stacked.

[0135] 4035 is a columnar spacer obtained by selectively etching the insulating film. It is provided to control the film thickness (cell gap) of the liquid crystal layer 4008. A pacer may be used.

[0136] Although not shown in the liquid crystal display device of FIG. 14, a color filter (colored layer), a black matrix Optical components (optical substrates) such as trix (light-shielding layer), polarizing components, phase difference components, and anti-reflection components For example, circular polarization may be achieved by a polarizing substrate and a retardation substrate. A backlight, a sidelight, or the like may be used as the light source. The use of an L panel is preferable because it allows for a thinner screen.

[0137] Alternatively, a liquid crystal that exhibits a blue phase without using an alignment film may be used. The blue phase is one of the liquid crystal phases. When the temperature of cholesteric liquid crystal is increased, the phase immediately transitions from the cholesteric phase to the isotropic phase. The blue phase appears only in a narrow temperature range, so the temperature range needs to be improved. In order to achieve this, a liquid crystal composition containing 5% by weight or more of a chiral agent is used for the liquid crystal layer 4008. The liquid crystal composition containing the liquid crystal exhibiting the blue phase and the chiral agent has a response speed of 10 μs to It is optically isotropic, requiring no alignment treatment, and has little viewing angle dependency. stomach.

[0138] Although FIG. 14 shows an example of a transmissive liquid crystal display panel, a semi-transmissive liquid crystal display panel can also be used in a reflective liquid crystal display panel. It can also be applied to LCD panels.

[0139] 12 to 14 and 16, the element substrate 4331, the sealing substrate 4332, As the material, a light-transmitting plastic or the like can be used. , FRP (Fiberglass-Reinforced Plastics) board, PV F (polyvinyl fluoride) film, polyester film or acrylic resin film Aluminum foil can also be used with PVF film or polyester film. A sheet sandwiched between films can also be used.

[0140] The insulating layer 4020 functions as a protective film for the thin film transistor.

[0141] The protective film prevents the intrusion of polluting impurities such as organic matter, metals, and water vapor floating in the air. The protective film is a silicon oxide film formed by sputtering. , silicon nitride film, silicon oxynitride film, silicon nitride oxide film, aluminum oxide film, aluminum nitride film The film is formed of a single layer or a stack of aluminum oxide films, aluminum oxynitride films, or aluminum nitride oxide films. That's fine.

[0142] The insulating layer 4021 functioning as a planarizing insulating film is formed of a material selected from the group consisting of acrylic, polyimide, and benzosilane. Heat-resistant organic materials such as clobutene, polyamide, and epoxy can be used. In addition to the above organic materials, low-k materials, siloxane resins, and PS G (phosphorus glass), BPSG (boron phosphorus glass), etc. can be used. The insulating layer may be formed by stacking a plurality of insulating films made of these materials.

[0143] The method for forming the insulating layers 4020 and 4021 is not particularly limited. ttach method, SOG method, spin coating, dip coating, spray coating, droplet ejection method (ink jet (printing, screen printing, offset printing, etc.), doctor knife, roll coater, A machine such as a knife coater or a pen coater can be used. The insulating layer is formed using a material liquid. In this case, annealing the semiconductor layer (200℃ to 400℃) at the same time as the baking process By combining the insulating layer firing process with the annealing of the semiconductor layer, display panels can be manufactured efficiently. It becomes possible to do this.

[0144] The display panel transmits light from a light source or a display element to display an image. All thin films such as the substrate, insulating film, and conductive film provided in the display unit are sensitive to light in the visible light wavelength range. It is translucent.

[0145] A first electrode layer and a second electrode layer (a pixel electrode layer, a common electrode layer, a pair of electrodes) that apply a voltage to the display element In the case of a light-emitting diode (also called a counter electrode layer), the direction of the light to be extracted, the location of the electrode layer, and The light transmission property or reflectivity can be selected depending on the pattern structure of the electrode layer.

[0146] The first electrode layer 4030 and the second electrode layer 4031 are made of an indium oxide containing tungsten oxide. oxide, indium zinc oxide with tungsten oxide, indium oxide with titanium oxide Indium tin oxide (hereinafter referred to as ITO) ), indium zinc oxide, indium tin oxide with silicon oxide added, etc. A conductive material that can be used can be used.

[0147] The first electrode layer 4030 and the second electrode layer 4031 are made of tungsten (W) and molybdenum. (Mo), zirconium (Zr), hafnium (Hf), vanadium (V), niobium (N b), Tantalum (Ta), Chromium (Cr), Cobalt (Co), Nickel (Ni), Titanium Metals such as titanium (Ti), platinum (Pt), aluminum (Al), copper (Cu), and silver (Ag), It can be formed by using one or more of the metals, alloys thereof, or metal nitrides thereof. Cut.

[0148] The first electrode layer 4030 and the second electrode layer 4031 are made of a conductive polymer (conductive polymer). The conductive polymer can be formed using a conductive composition containing a conductive polymer. For example, a so-called π-electron conjugated conductive polymer can be used. or its derivatives, polypyrrole or its derivatives, polythiophene or its derivatives, or and copolymers of two or more of these.

[0149] In addition, since thin film transistors are easily damaged by static electricity, etc., a protective layer is required to protect the drive circuit. It is preferable to provide a protection circuit. The protection circuit is preferably configured using a nonlinear element. .

[0150] This embodiment mode can be implemented by being appropriately combined with the configurations described in other embodiments. is.

[0151] (Embodiment 5) In this embodiment, examples of materials and element structures constituting a display device will be described in detail.

[0152] Since the signal line driver circuit is provided on the support portion, it does not need to be particularly flexible. A semiconductor that uses a semiconductor substrate (semiconductor wafer) capable of high-speed operation as a signal line driver circuit It is preferable to use an integrated circuit chip (IC). and polycrystalline semiconductor substrates such as silicon wafers and germanium wafers. semiconductor wafers, and compound semiconductor wafers such as gallium arsenide and indium phosphide. do.

[0153] In addition, a substrate having an SOI structure in which a single crystal semiconductor layer is provided on an insulating surface is used for the signal line driver circuit ( An SOI substrate may be used. It can be created using the IMplanted Oxygen method or the Smart-Cut method. The SIMOX method involves implanting oxygen ions into a single-crystal silicon substrate to a specified depth. After forming the oxygen-containing layer, a heat treatment is performed to form a buried insulating layer at a certain depth from the surface. The Smart-Cut method is a method of forming a single crystal silicon layer on a buried insulating layer. Hydrogen ions are implanted into the oxidized single crystal silicon substrate, and hydrogen is implanted at a desired depth. A silicon-containing layer is formed on another semiconductor substrate (a single crystal having a silicon oxide film on the surface for bonding). The hydrogen-containing layer is then bonded to a single-crystal silicon substrate (such as a single-crystal silicon substrate) and subjected to heat treatment. The silicon substrate is divided and a silicon oxide film and a single-crystal silicon layer are laminated on the semiconductor substrate. This is how to do it.

[0154] The semiconductor elements provided in the circuit section of the display device include not only field effect transistors but also semiconductors. It can also be used for memory (storage) elements that use conductor layers, and is required for a wide range of applications. A semiconductor integrated circuit that fulfills the functions described above can be provided.

[0155] There are no particular limitations on the method for providing the scanning line driving circuit and the display section on the flexible substrate of the display panel. The scanning line driver circuit and the display section may be formed directly on the flexible substrate, or may be formed by other fabrication methods. The element layer is fabricated on a substrate, and then transferred from the fabrication substrate to a flexible substrate by a peeling method. For example, a scanning line driver circuit and a display portion may be formed on a manufacturing substrate in the same process. The line driver circuit and the display portion can be provided by being transposed onto a flexible substrate of the display panel. In this case, the scanning line driver circuit and the display section are formed in the same process, so transistors of the same structure and material are used. Therefore, the scanning line driving circuit and the display unit are preferably made of a scanning element. The channel layers of the transistors are made of the same material.

[0156] In addition, the substrate is transferred from the substrate to a flexible support substrate, and the substrate is used as a substrate for the display panel together with the flexible support substrate. For example, a plurality of scanning line driving circuits may be formed on a fabrication substrate, and the wiring board may be attached to a flexible substrate. After the flexible support substrate is transferred to the support substrate, it is cut into individual scanning line drive circuits. The scanning line driving circuit is attached to a flexible support substrate as needed for the display panel. In this case, the scanning line driver circuit and the display portion are manufactured in separate steps. Transistors of various configurations and materials can be selected.

[0157] The above-mentioned transposition method and direct formation method may be combined. For example, a printing method may be used to The wiring that electrically connects the display section, scanning line driving circuit section, FPC, etc. is attached to the flexible substrate of the display panel. It may be formed directly on the plate.

[0158] The substrate for fabrication may be appropriately selected in accordance with the fabrication process of the element layer. The substrates include glass substrates, quartz substrates, sapphire substrates, ceramic substrates, and substrates with an insulating layer on the surface. A metal substrate having a heat resistance that can withstand the processing temperature can be used. A plastic substrate may also be used.

[0159] As flexible substrates, aramid resin, polyethylene naphthalate (PEN) resin, and polyethylene terephthalate (PEN) resin are used. Polyphenylene sulfide (PES) resin, polyphenylene sulfide (PPS) resin, polyimide In addition, a structure in which fibers are impregnated with organic resin can be used. Certain prepregs may also be used.

[0160] The method for transferring the element layer from the substrate to another substrate is not particularly limited, and various methods can be used. For example, a separation layer may be formed between the formation substrate and the element layer.

[0161] In this specification, the element layer refers to not only the semiconductor element layer provided on the element substrate side but also the opposing This also includes the counter electrode layer provided on the substrate side. In addition, in consideration of the simplicity of the process, the substrate is transferred to a flexible substrate. After that, the flexible substrate is temporarily attached to a glass substrate or the like in the manufacturing process, and the manufacturing process is continued. It is also possible.

[0162] The peeling layer is formed by sputtering, plasma CVD, coating, printing, etc. W, Molybdenum (Mo), Titanium (Ti), Tantalum (Ta), Niobium (Nb), Nickel (Ni), cobalt (Co), zirconium (Zr), zinc (Zn), ruthenium Ru (Ru), Rhodium (Rh), Palladium (Pd), Osmium (Os), Iridium (Ir), silicon (Si), or an alloy material mainly composed of the element, or A layer made of a compound material containing the above element as a main component is formed as a single layer or a stacked layer. The crystalline structure of the layer may be amorphous, microcrystalline, or polycrystalline. The fabrication method includes spin coating, droplet ejection, and dispensing.

[0163] When the release layer has a single layer structure, it is preferably a tungsten layer, a molybdenum layer, or a tungsten layer. A layer containing a mixture of tungsten and molybdenum is formed. Alternatively, a layer containing tungsten oxide or molybdenum oxide is formed. a layer containing a nitride, a layer containing an oxide or oxynitride of molybdenum, or a layer containing tungsten and A layer containing an oxide or oxynitride of a mixture of molybdenum is formed. The mixture of tungsten and molybdenum corresponds to, for example, an alloy of tungsten and molybdenum.

[0164] When the release layer has a laminated structure, the first layer is preferably a tungsten layer, a molybdenum layer, or a The first layer contains a mixture of tungsten and molybdenum, and the second layer contains tungsten, Oxides, nitrides, oxynitrides or nitrides of molybdenum or mixtures of tungsten and molybdenum Forms an oxide.

[0165] A layer containing tungsten and a layer containing tungsten oxide are stacked as a peeling layer. In this case, a layer containing tungsten is formed, and an insulating layer made of oxide is formed on the layer. By this, a layer containing tungsten oxide is formed at the interface between the tungsten layer and the insulating layer. Furthermore, the surface of the tungsten-containing layer may be subjected to a thermal oxidation treatment, Oxygen plasma treatment, treatment with a strong oxidizing solution such as ozone water, etc., is used to remove the tungsten acid. In addition, the plasma treatment or the heat treatment may be performed by using oxygen, nitrogen, or dioxide. The process may be carried out in an atmosphere of nitrogen alone or a mixture of the above gases with other gases. The same applies to the case of forming a layer containing tungsten nitride, oxynitride, or nitride oxide. After forming a layer containing tungsten, a silicon nitride layer, a silicon oxynitride layer, a silicon nitride layer, and a silicon nitride layer are formed on the layer. It is preferable to form a silicon dioxide layer.

[0166] In the transfer step to another substrate, a separation layer is formed between the substrate and the element layer. a metal oxide film is provided between the element layer and the metal oxide film is weakened by crystallization, and the element layer is peeled off. a method of providing an amorphous silicon film containing hydrogen between a substrate having high heat resistance and an element layer, The amorphous silicon film is removed by irradiation or etching, thereby peeling off the element layer. A method for manufacturing a semiconductor device, comprising: forming a separation layer between a substrate and an element layer; and providing a metal oxide film between the separation layer and the element layer. The metal oxide film is weakened by crystallization, and part of the peeling layer is dissolved in a solution of NF3, BrF3, Cl After removing the metal oxide film by etching with halogen fluoride gas such as F3, The method of peeling off the substrate on which the element layer is formed is to mechanically remove it or to remove it with a solution such as NF3 or BrF 3. The method of removing the metal by etching with halogen fluoride gas such as ClF3 can be appropriately used. In addition, a film containing nitrogen, oxygen, hydrogen, etc. (for example, an amorphous film containing hydrogen) can be used as the peeling layer. The peeling layer is irradiated with laser light. Nitrogen, oxygen, and hydrogen contained in the peeling layer are released as gas to promote peeling between the element layer and the substrate. The following method may also be used.

[0167] By combining the above peeling methods, the transposition process can be carried out more easily. irradiation of the laser beam, etching of the peeling layer with gas or solution, or etching with a sharp knife or scalpel Mechanical removal is performed to make it easier to separate the release layer and the element layer, and then physical force (mechanical Peeling can also be performed by mechanical means.

[0168] Alternatively, the element layer may be peeled off from the substrate by allowing a liquid to penetrate into the interface between the peeling layer and the element layer. Water or the like can be used as the body.

[0169] There is no particular limitation on the type of transistor included in the display device disclosed in this specification. Various structures and semiconductor materials can be used.

[0170] An example of the structure of a thin film transistor will be described with reference to FIG. 15. FIG. 15 shows the structure of a thin film transistor according to the fifth embodiment. 40 is an example of a thin film transistor that can be used as the thin film transistor 4010 in the semiconductor device.

[0171] In FIGS. 15A to 15D, an insulating film 4023 is formed on an element substrate 4331. Thin film transistors 4010a, 4010b, 4010c, and 4010d are provided on the insulating film 4023. On the thin film transistors 4010a, 4010b, 4010c, and 4010d Insulating layers 4020 and 4021 are formed, and thin film transistors 4010a and 4010b are formed. , 4010c, and 4010d.

[0172] The thin film transistor 4010a is the same as the thin film transistor 4010 in FIG. The wiring layers 405a and 405b functioning as a source electrode layer and a drain electrode layer, and the semiconductor layer 40 3 contacts with no n+ layer in between.

[0173] The thin film transistor 4010a is an inverted staggered thin film transistor and has an insulating surface. On an element substrate 4331 which is a substrate and an insulating film 4023, a gate electrode layer 401 and a gate insulating layer 402, a semiconductor layer 403, and a wiring layer 405 functioning as a source electrode layer or a drain electrode layer. a, including 405b.

[0174] The thin film transistor 4010b is a bottom gate thin film transistor having an insulating surface. On an element substrate 4331, which is a substrate for forming a gate electrode layer 401, a gate insulating film 4023 are formed. The wiring layers 405a and 405b functioning as source and drain electrode layers are , which function as a source region or a drain region +Layers 404a, 404b, and the semiconductor layer Including 403. + The layers 404a and 404b are semiconductor layers having a lower resistance than the semiconductor layer 403. In addition, an insulating layer 4020 that covers the thin film transistor 4010b and is in contact with the semiconductor layer 403 is provided.

[0175] In addition, n + The layers 404a and 404b are formed between the gate insulating layer 402 and the wiring layers 405a and 405b. It may also be a structure in which the n + The layer is formed between the gate insulating layer and the wiring layer, and between the wiring layer and the A structure in which the insulating film is provided between the semiconductor layers and on both sides may also be used.

[0176] The thin film transistor 4010b has a gate electrode in the entire region including the thin film transistor 4010b. A device substrate is a substrate having a gate insulating layer 402 and an insulating surface. The gate electrode layer 401 is provided between the gate insulating layer 4331. The wiring layer 405a, 405b, and n + Layers 404a and 404b are provided. The insulating layer 402, the wiring layers 405a, 405b, and n + On the layers 404a and 404b, a semiconductor layer Although not shown, a wiring layer 405 is provided on the gate insulating layer 402. a, 405b, and a wiring layer extending outward from the outer periphery of the semiconductor layer 403. is doing.

[0177] The thin film transistor 4010c is the same as the thin film transistor 4010b except that the source electrode layer and The drain electrode layer and the semiconductor layer are + The structure is such that the two contact each other without any intervening layer.

[0178] The thin film transistor 4010c has a gate electrode in the entire region including the thin film transistor 4010c. A device substrate is a substrate having a gate insulating layer 402 and an insulating surface. The gate electrode layer 401 is provided between the gate insulating layer 4331. The wiring layer The gate insulating layer 402, the wiring layer 405a, and the wiring layer 405b are provided. The semiconductor layer 403 is provided on the gate insulating layer 405b. 2 has wiring layers 405a and 405b and a wiring layer on the semiconductor layer 403. It extends outward from the outer periphery.

[0179] The thin film transistor 4010d is a top-gate thin film transistor. The transistor 4010d is an example of a planar thin film transistor. On an element substrate 4331 and an insulating film 4023, a Ru + A semiconductor layer 403 including layers 404a and 404b, a gate insulating layer 4 02 is formed, and a gate electrode layer 401 is formed on the gate insulating layer 402. + A wiring layer which is in contact with the layers 404a and 404b and functions as a source electrode layer or a drain electrode layer 405a and 405b are formed. + The layers 404a and 404b are made of a material different from the semiconductor layer 403. It is a semiconductor region with a lower resistance.

[0180] A top-gate type forward staggered thin film transistor may be used as the thin film transistor.

[0181] In this embodiment, a single gate structure has been described, but a multi-gate structure such as a double gate structure may also be used. In this case, a gate electrode layer may be provided above and below the semiconductor layer. Alternatively, a structure in which a plurality of gate electrode layers are provided on only one side (upper or lower) of the semiconductor layer may be used.

[0182] The semiconductor material used for the semiconductor layer is not particularly limited. Examples of materials that can be used are described below.

[0183] The semiconductor layers of semiconductor elements are made of semiconductor materials such as silane and germane. Amorphous (hereinafter referred to as amorphous) is a material produced by vapor deposition or sputtering using a source gas. (Also called "AS") semiconductor, the amorphous semiconductor is Crystallized polycrystalline semiconductor or microcrystalline (semi-amorphous or microcrystalline) Also called "SAS" hereafter.) Semiconductors, etc. can be used. The layer can be deposited by sputtering, LPCVD, or plasma CVD. .

[0184] Considering the Gibbs free energy, the microcrystalline semiconductor film is a quasi-stable film intermediate between amorphous and single crystal. In other words, the third state is a stable state in terms of free energy. Conductive, with short-range order and lattice distortion. Columnar or needle-like crystals are formed on the substrate surface. Microcrystalline silicon, a typical example of a microcrystalline semiconductor, grows in the normal direction. The 520 cm spectrum indicates single-crystal silicon. -1 It is shifted to the lower wavenumber side than That is, 520 cm, which indicates single crystal silicon. -1 and 480 cm, which indicates amorphous silicon -1 The Raman spectrum of microcrystalline silicon has a peak between these two. At least 1 atomic % or more of hydrogen or halogen is used to terminate the ring bond. It also contains rare gas elements such as helium, argon, krypton, and neon. By further promoting lattice distortion through the annealing, stability is increased and a good microcrystalline semiconductor film can be obtained. do.

[0185] This microcrystalline semiconductor film is formed by a high-frequency plasma CVD method with a frequency of several tens to several hundreds of MHz, or Alternatively, it can be formed by a microwave plasma CVD device with a frequency of 1 GHz or more. Representative examples include SiH4, Si2H6, SiH2Cl2, SiHCl3, SiCl4, and S It can be formed by diluting silicon hydride such as iF4 with hydrogen. In addition to hydrogen, one or more of helium, argon, krypton, and neon A microcrystalline semiconductor film can be formed by diluting the silicon hydride with a rare gas element. The flow rate ratio of hydrogen to nitrogen is 5 to 200 times, preferably 50 to 150 times, More preferably, it is 100 times.

[0186] Representative amorphous semiconductors include hydrogenated amorphous silicon and crystalline semiconductors. A typical example is polysilicon. Polysilicon (polycrystalline silicon) has the following features: , which uses polysilicon as the main material and is formed through a process temperature of 800°C or higher. The main materials are high-temperature polysilicon and polysilicon formed at process temperatures below 600°C. The so-called low-temperature polysilicon is used as a material for the crystallization of amorphous silicon. It contains polysilicon, which is made by crystallizing silicon. Of course, as mentioned above, A semiconductor or a semiconductor layer containing a crystalline phase in part can also be used.

[0187] In addition to elements such as silicon (Si) and germanium (Ge), semiconductor materials include Compound semiconductors such as GaAs, InP, SiC, ZnSe, GaN, and SiGe are also used. You can be there.

[0188] When a crystalline semiconductor film is used as the semiconductor layer, the crystalline semiconductor film can be manufactured by various methods. Methods (laser crystallization, thermal crystallization, or using elements that promote crystallization such as nickel) In addition, the SAS microcrystalline semiconductor can be irradiated with laser to form a crystal. If no element that promotes crystallization is introduced, the material will be amorphous. Before irradiating the silicon film with laser light, it was heated at 500°C for 1 hour in a nitrogen atmosphere. The hydrogen concentration of the amorphous silicon film is 1×10 20 atoms / cm 3 Release to the following: This is because when a laser beam is irradiated onto an amorphous silicon film containing a large amount of hydrogen, the amorphous silicon film is destroyed. Because it will be put away.

[0189] As a method for introducing a metal element into an amorphous semiconductor layer, the metal element is introduced onto the surface of the amorphous semiconductor film. There are no particular limitations on the method as long as it can be used to make the surface or interior thereof. For example, sputtering, CVD, etc. method, plasma treatment method (including plasma CVD method), adsorption method, method of applying a metal salt solution Among these, the method using a solution is simple and easy to use, and the concentration of the metal element can be adjusted. In addition, the wettability of the surface of the amorphous semiconductor film is improved. In order to spread the aqueous solution over the entire surface of the amorphous semiconductor film, UV light was used in an oxygen atmosphere. by irradiation, thermal oxidation, treatment with ozone water containing hydroxyl radicals or hydrogen peroxide, etc. Therefore, it is desirable to form an oxide film.

[0190] In addition, in the crystallization process of crystallizing the amorphous semiconductor film to form a crystalline semiconductor film, The element that promotes crystallization (also referred to as a catalytic element or metal element) is added to the film, and the film is heat-treated (550 Crystallization may be carried out by heating at 500°C to 750°C for 3 minutes to 24 hours. The elements that can be used include iron (Fe), nickel (Ni), cobalt (Co), and ruthenium (Ru ), rhodium (Rh), palladium (Pd), osmium (Os), iridium (Ir) , platinum (Pt), copper (Cu) and gold (Au) can be done.

[0191] In order to remove or reduce the elements that promote crystallization from the crystalline semiconductor film, A semiconductor film containing an impurity element is formed in contact with the substrate, and functions as a gettering sink. As for pure elements, impurity elements that give n-type conductivity, impurity elements that give p-type conductivity, and rare gas elements For example, phosphorus (P), nitrogen (N), arsenic (As), antimony ( Sb), Bismuth (Bi), Boron (B), Helium (He), Neon (Ne), Argon One or more selected from Ar (Ar), Kr (krypton), and Xe (xenon) are used. A crystalline semiconductor film containing an element that promotes crystallization can be formed by adding a semiconductor containing a rare gas element. A conductive film is formed and heat treated (at 550°C to 750°C for 3 minutes to 24 hours). The elements contained in the film that promote crystallization move into the semiconductor film containing the rare gas element, and the crystallization The elements that promote crystallization in the semiconductor film are removed or reduced. The semiconductor film containing the rare gas element that has become a mask is then removed.

[0192] The crystallization of the amorphous semiconductor film may be performed by combining a heat treatment and crystallization by laser light irradiation. The heat treatment or the laser light irradiation may be performed individually or multiple times.

[0193] Alternatively, the crystalline semiconductor film may be formed directly on the substrate by a plasma method. A crystalline semiconductor film may be selectively formed on a substrate by using a method.

[0194] The semiconductor layer may also be made of an oxide semiconductor, such as zinc oxide (ZnO) or tin oxide. (SnO2) can also be used. When ZnO is used for the semiconductor layer, the gate insulating layer Y2O3, Al2O3, TiO2, and laminations of these materials are used to form gate electrode layers and source electrodes. The electrode layer and the drain electrode layer may be made of ITO, Au, Ti, or the like. In, Ga, etc. can also be added to ZnO.

[0195] InMO3(ZnO) as an oxide semiconductor m A thin film expressed as (m>0) can be used. M can be gallium (Ga), iron (Fe), nickel (Ni), manganese (M n) and cobalt (Co). M can be Ga, or it can be any of the above other than Ga, such as Ga and Ni or Ga and Fe. In some cases, a metal element is contained. In addition, in the above oxide semiconductor, the metal contained as M is In addition to the transition metal elements, Fe, Ni and other transition metal elements, or the oxides of these transition metals, may be present as impurity elements. For example, the oxide semiconductor layer is made of In-Ga-Zn-O. Non-single crystalline films can be used.

[0196] Oxide semiconductor layer (InMO3(ZnO) m(m>0) film) as In-Ga-Zn-O system Instead of a non-single crystal film, InMO3(ZnO) where M is another metal element m (m>0) membrane In addition to the above, In may be used as an oxide semiconductor for the oxide semiconductor layer. -Sn-Zn-O system, In-Al-Zn-O system, Sn-Ga-Zn-O system, Al-Ga- Zn-O series, Sn-Al-Zn-O series, In-Zn-O series, Sn-Zn-O series, Al-Z nO-based, In-O-based, Sn-O-based, and Zn-O-based oxide semiconductors can be used. .

[0197] This embodiment mode can be implemented by being appropriately combined with the configurations described in other embodiments. is.

Claims

1. A first resin layer and a second resin layer, an active matrix display unit disposed between the first resin layer and the second resin layer; a scanning line driving circuit disposed between the first resin layer and the second resin layer; a signal line driving circuit disposed on the first resin layer and not disposed between the first resin layer and the second resin layer; a first plate and a second plate arranged on a surface of the first resin layer opposite to the second resin layer side, the first plate and the second plate are spaced apart from each other, the first resin layer has a first region overlapping with the signal line driving circuit, a second region overlapping with the first plate and overlapping with the second resin layer with the display unit interposed therebetween, and a third region overlapping with the second plate and overlapping with the second resin layer with the display unit interposed therebetween; the first resin layer has a fourth region disposed between the first region and the second region, and a fifth region disposed between the second region and the third region, each of the first region, the second region, and the third region functions as a non-bending portion; Each of the fourth region and the fifth region functions as a bending portion. Display device.

2. A first resin layer and a second resin layer, an active matrix display unit disposed between the first resin layer and the second resin layer; a scanning line driving circuit disposed between the first resin layer and the second resin layer; a signal line driving circuit disposed on the first resin layer and not disposed between the first resin layer and the second resin layer; a first plate and a second plate arranged on a surface of the first resin layer opposite to the second resin layer side, the first plate and the second plate are spaced apart from each other, the first resin layer has a first region overlapping with the signal line driving circuit, a second region overlapping with the first plate and overlapping with the second resin layer with the display unit interposed therebetween, and a third region overlapping with the second plate and overlapping with the second resin layer with the display unit interposed therebetween; the first resin layer has a fourth region disposed between the first region and the second region, and a fifth region disposed between the second region and the third region, each of the first region, the second region, and the third region functions as a non-bending portion; each of the fourth region and the fifth region has a function as a bending portion; the scanning line driving circuit overlaps with the first plate via the first resin layer and also overlaps with the second plate via the first resin layer; Display device.

3. A first resin layer and a second resin layer, an active matrix display unit disposed between the first resin layer and the second resin layer; a scanning line driving circuit disposed between the first resin layer and the second resin layer; a signal line driving circuit disposed on the first resin layer and not disposed between the first resin layer and the second resin layer; a first plate and a second plate arranged on a surface of the first resin layer opposite to the second resin layer side, the first plate and the second plate are spaced apart from each other, the first resin layer has a first region overlapping with the signal line driving circuit, a second region overlapping with the first plate and overlapping with the second resin layer with the display unit interposed therebetween, and a third region overlapping with the second plate and overlapping with the second resin layer with the display unit interposed therebetween; the first resin layer has a fourth region disposed between the first region and the second region, and a fifth region disposed between the second region and the third region, each of the first region, the second region, and the third region functions as a non-bending portion; each of the fourth region and the fifth region has a function as a bending portion; the scanning line driving circuit does not overlap with the first region and the fourth region when the first resin layer is not bent; Display device.

4. A first resin layer and a second resin layer, an active matrix display unit disposed between the first resin layer and the second resin layer; a scanning line driving circuit disposed between the first resin layer and the second resin layer; a signal line driving circuit disposed on the first resin layer and not disposed between the first resin layer and the second resin layer; a first plate and a second plate arranged on a surface of the first resin layer opposite to the second resin layer side, the first plate and the second plate are spaced apart from each other, the first resin layer has a first region overlapping with the signal line driving circuit, a second region overlapping with the first plate and overlapping with the second resin layer with the display unit interposed therebetween, and a third region overlapping with the second plate and overlapping with the second resin layer with the display unit interposed therebetween; the first resin layer has a fourth region disposed between the first region and the second region, and a fifth region disposed between the second region and the third region, each of the first region, the second region, and the third region functions as a non-bending portion; each of the fourth region and the fifth region has a function as a bending portion; the scanning line driving circuit does not overlap with the first region and the fourth region when the first resin layer is not bent; the scanning line driving circuit overlaps with the first plate via the first resin layer and also overlaps with the second plate via the first resin layer; Display device.

5. A first resin layer and a second resin layer, an active matrix display unit disposed between the first resin layer and the second resin layer; a scanning line driving circuit disposed between the first resin layer and the second resin layer; a signal line driving circuit disposed on the first resin layer and not disposed between the first resin layer and the second resin layer; a first plate and a second plate arranged on a surface of the first resin layer opposite to the second resin layer; a support portion, the first plate and the second plate are spaced apart from each other, the first resin layer has a first region overlapping with the signal line driving circuit, a second region overlapping with the first plate and overlapping with the second resin layer with the display unit interposed therebetween, and a third region overlapping with the second plate and overlapping with the second resin layer with the display unit interposed therebetween; the first resin layer has a fourth region disposed between the first region and the second region, and a fifth region disposed between the second region and the third region, the first region overlaps with the support portion, each of the first region, the second region, and the third region functions as a non-bending portion; Each of the fourth region and the fifth region functions as a bending portion. Display device.

6. A first resin layer and a second resin layer, an active matrix display unit disposed between the first resin layer and the second resin layer; a scanning line driving circuit disposed between the first resin layer and the second resin layer; a signal line driving circuit disposed on the first resin layer and not disposed between the first resin layer and the second resin layer; a first plate and a second plate arranged on a surface of the first resin layer opposite to the second resin layer; a support portion, the first plate and the second plate are spaced apart from each other, the first resin layer has a first region overlapping with the signal line driving circuit, a second region overlapping with the first plate and overlapping with the second resin layer with the display unit interposed therebetween, and a third region overlapping with the second plate and overlapping with the second resin layer with the display unit interposed therebetween; the first resin layer has a fourth region disposed between the first region and the second region, and a fifth region disposed between the second region and the third region, the first region overlaps with the support portion, each of the first region, the second region, and the third region functions as a non-bending portion; each of the fourth region and the fifth region has a function as a bending portion; the scanning line driving circuit overlaps with the first plate via the first resin layer and also overlaps with the second plate via the first resin layer; Display device.

7. A first resin layer and a second resin layer, an active matrix display unit disposed between the first resin layer and the second resin layer; a scanning line driving circuit disposed between the first resin layer and the second resin layer; a signal line driving circuit disposed on the first resin layer and not disposed between the first resin layer and the second resin layer; a first plate and a second plate arranged on a surface of the first resin layer opposite to the second resin layer; a support portion, the first plate and the second plate are spaced apart from each other, the first resin layer has a first region overlapping with the signal line driving circuit, a second region overlapping with the first plate and overlapping with the second resin layer with the display unit interposed therebetween, and a third region overlapping with the second plate and overlapping with the second resin layer with the display unit interposed therebetween; the first resin layer has a fourth region disposed between the first region and the second region, and a fifth region disposed between the second region and the third region, the first region overlaps with the support portion, each of the first region, the second region, and the third region functions as a non-bending portion; each of the fourth region and the fifth region has a function as a bending portion; the scanning line driving circuit does not overlap with the first region and the fourth region when the first resin layer is not bent; Display device.

8. A first resin layer and a second resin layer, an active matrix display unit disposed between the first resin layer and the second resin layer; a scanning line driving circuit disposed between the first resin layer and the second resin layer; a signal line driving circuit disposed on the first resin layer and not disposed between the first resin layer and the second resin layer; a first plate and a second plate arranged on a surface of the first resin layer opposite to the second resin layer; a support portion, the first plate and the second plate are spaced apart from each other, the first resin layer has a first region overlapping with the signal line driving circuit, a second region overlapping with the first plate and overlapping with the second resin layer with the display unit interposed therebetween, and a third region overlapping with the second plate and overlapping with the second resin layer with the display unit interposed therebetween; the first resin layer has a fourth region disposed between the first region and the second region, and a fifth region disposed between the second region and the third region, the first region overlaps with the support portion, each of the first region, the second region, and the third region functions as a non-bending portion; each of the fourth region and the fifth region has a function as a bending portion; the scanning line driving circuit does not overlap with the first region and the fourth region when the first resin layer is not bent; the scanning line driving circuit overlaps with the first plate via the first resin layer and also overlaps with the second plate via the first resin layer; Display device.

9. A first resin layer and a second resin layer, a display unit disposed between the first resin layer and the second resin layer and having a transistor and a light-emitting element; a scanning line driving circuit disposed between the first resin layer and the second resin layer; a signal line driving circuit disposed on the first resin layer and not disposed between the first resin layer and the second resin layer; a first plate and a second plate arranged on a surface of the first resin layer opposite to the second resin layer side, the first plate and the second plate are spaced apart from each other, the first resin layer has a first region overlapping with the signal line driving circuit, a second region overlapping with the first plate and overlapping with the second resin layer with the display unit interposed therebetween, and a third region overlapping with the second plate and overlapping with the second resin layer with the display unit interposed therebetween; the first resin layer has a fourth region disposed between the first region and the second region, and a fifth region disposed between the second region and the third region, each of the first region, the second region, and the third region functions as a non-bending portion; Each of the fourth region and the fifth region functions as a bending portion. Display device.

10. A first resin layer and a second resin layer, a display unit disposed between the first resin layer and the second resin layer and having a transistor and a light-emitting element; a scanning line driving circuit disposed between the first resin layer and the second resin layer; a signal line driving circuit disposed on the first resin layer and not disposed between the first resin layer and the second resin layer; a first plate and a second plate arranged on a surface of the first resin layer opposite to the second resin layer side, the first plate and the second plate are spaced apart from each other, the first resin layer has a first region overlapping with the signal line driving circuit, a second region overlapping with the first plate and overlapping with the second resin layer with the display unit interposed therebetween, and a third region overlapping with the second plate and overlapping with the second resin layer with the display unit interposed therebetween; the first resin layer has a fourth region disposed between the first region and the second region, and a fifth region disposed between the second region and the third region, each of the first region, the second region, and the third region functions as a non-bending portion; each of the fourth region and the fifth region has a function as a bending portion; the scanning line driving circuit overlaps with the first plate via the first resin layer and also overlaps with the second plate via the first resin layer; Display device.

11. A first resin layer and a second resin layer, a display unit disposed between the first resin layer and the second resin layer and having a transistor and a light-emitting element; a scanning line driving circuit disposed between the first resin layer and the second resin layer; a signal line driving circuit disposed on the first resin layer and not disposed between the first resin layer and the second resin layer; a first plate and a second plate arranged on a surface of the first resin layer opposite to the second resin layer side, the first plate and the second plate are spaced apart from each other, the first resin layer has a first region overlapping with the signal line driving circuit, a second region overlapping with the first plate and overlapping with the second resin layer with the display unit interposed therebetween, and a third region overlapping with the second plate and overlapping with the second resin layer with the display unit interposed therebetween; the first resin layer has a fourth region disposed between the first region and the second region, and a fifth region disposed between the second region and the third region, each of the first region, the second region, and the third region functions as a non-bending portion; each of the fourth region and the fifth region has a function as a bending portion; the scanning line driving circuit does not overlap with the first region and the fourth region when the first resin layer is not bent; Display device.

12. A first resin layer and a second resin layer, a display unit disposed between the first resin layer and the second resin layer and having a transistor and a light-emitting element; a scanning line driving circuit disposed between the first resin layer and the second resin layer; a signal line driving circuit disposed on the first resin layer and not disposed between the first resin layer and the second resin layer; a first plate and a second plate arranged on a surface of the first resin layer opposite to the second resin layer side, the first plate and the second plate are spaced apart from each other, the first resin layer has a first region overlapping with the signal line driving circuit, a second region overlapping with the first plate and overlapping with the second resin layer with the display unit interposed therebetween, and a third region overlapping with the second plate and overlapping with the second resin layer with the display unit interposed therebetween; the first resin layer has a fourth region disposed between the first region and the second region, and a fifth region disposed between the second region and the third region, each of the first region, the second region, and the third region functions as a non-bending portion; each of the fourth region and the fifth region has a function as a bending portion; the scanning line driving circuit does not overlap with the first region and the fourth region when the first resin layer is not bent; the scanning line driving circuit overlaps with the first plate via the first resin layer and also overlaps with the second plate via the first resin layer; Display device.

13. A first resin layer and a second resin layer, a display unit disposed between the first resin layer and the second resin layer and having a transistor and a light-emitting element; a scanning line driving circuit disposed between the first resin layer and the second resin layer; a signal line driving circuit disposed on the first resin layer and not disposed between the first resin layer and the second resin layer; a first plate and a second plate arranged on a surface of the first resin layer opposite to the second resin layer; a support portion, the first plate and the second plate are spaced apart from each other, the first resin layer has a first region overlapping with the signal line driving circuit, a second region overlapping with the first plate and overlapping with the second resin layer with the display unit interposed therebetween, and a third region overlapping with the second plate and overlapping with the second resin layer with the display unit interposed therebetween; the first resin layer has a fourth region disposed between the first region and the second region, and a fifth region disposed between the second region and the third region, the first region overlaps with the support portion, each of the first region, the second region, and the third region functions as a non-bending portion; Each of the fourth region and the fifth region functions as a bending portion. Display device.

14. A first resin layer and a second resin layer, a display unit disposed between the first resin layer and the second resin layer and having a transistor and a light-emitting element; a scanning line driving circuit disposed between the first resin layer and the second resin layer; a signal line driving circuit disposed on the first resin layer and not disposed between the first resin layer and the second resin layer; a first plate and a second plate arranged on a surface of the first resin layer opposite to the second resin layer; a support portion, the first plate and the second plate are spaced apart from each other, the first resin layer has a first region overlapping with the signal line driving circuit, a second region overlapping with the first plate and overlapping with the second resin layer with the display unit interposed therebetween, and a third region overlapping with the second plate and overlapping with the second resin layer with the display unit interposed therebetween; the first resin layer has a fourth region disposed between the first region and the second region, and a fifth region disposed between the second region and the third region, the first region overlaps with the support portion, each of the first region, the second region, and the third region functions as a non-bending portion; each of the fourth region and the fifth region has a function as a bending portion; the scanning line driving circuit overlaps with the first plate via the first resin layer and also overlaps with the second plate via the first resin layer; Display device.

15. A first resin layer and a second resin layer, a display unit disposed between the first resin layer and the second resin layer and having a transistor and a light-emitting element; a scanning line driving circuit disposed between the first resin layer and the second resin layer; a signal line driving circuit disposed on the first resin layer and not disposed between the first resin layer and the second resin layer; a first plate and a second plate arranged on a surface of the first resin layer opposite to the second resin layer; a support portion, the first plate and the second plate are spaced apart from each other, the first resin layer has a first region overlapping with the signal line driving circuit, a second region overlapping with the first plate and overlapping with the second resin layer with the display unit interposed therebetween, and a third region overlapping with the second plate and overlapping with the second resin layer with the display unit interposed therebetween; the first resin layer has a fourth region disposed between the first region and the second region, and a fifth region disposed between the second region and the third region, the first region overlaps with the support portion, each of the first region, the second region, and the third region functions as a non-bending portion; each of the fourth region and the fifth region has a function as a bending portion; the scanning line driving circuit does not overlap with the first region and the fourth region when the first resin layer is not bent; Display device.

16. A first resin layer and a second resin layer, a display unit disposed between the first resin layer and the second resin layer and having a transistor and a light-emitting element; a scanning line driving circuit disposed between the first resin layer and the second resin layer; a signal line driving circuit disposed on the first resin layer and not disposed between the first resin layer and the second resin layer; a first plate and a second plate arranged on a surface of the first resin layer opposite to the second resin layer; a support portion, the first plate and the second plate are spaced apart from each other, the first resin layer has a first region overlapping with the signal line driving circuit, a second region overlapping with the first plate and overlapping with the second resin layer with the display unit interposed therebetween, and a third region overlapping with the second plate and overlapping with the second resin layer with the display unit interposed therebetween; the first resin layer has a fourth region disposed between the first region and the second region, and a fifth region disposed between the second region and the third region, the first region overlaps with the support portion, each of the first region, the second region, and the third region functions as a non-bending portion; each of the fourth region and the fifth region has a function as a bending portion; the scanning line driving circuit does not overlap with the first region and the fourth region when the first resin layer is not bent; the scanning line driving circuit overlaps with the first plate via the first resin layer and also overlaps with the second plate via the first resin layer; Display device.

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