Development processing method, storage medium, and development processing device

Abstract

To uniformize development processing in a substrate surface.SOLUTION: A substrate processing method includes the steps of: performing the first development processing of arranging a nozzle which has one end face and a discharge port that is open to the end face such that the end face is opposed to a surface of a substrate, and moving the nozzle while bringing the end face into contact with a developing solution on the surface of the substrate in such a state that the developing solution is discharged from the discharge port in a first flow rate while rotating the substrate; and performing the second development processing of discharging the developing solution from the discharge port in a second flow rate greater than the first flow rate in such a state that the end face is brought into contact with the developing solution on the surface of the substrate at a position opposed to the center of the surface of the substrate while rotating the substrate after the first development processing.SELECTED DRAWING: Figure 13

Description

[Technical Field]

[0001] The present disclosure relates to a substrate processing method, a storage medium, and a substrate processing apparatus. [Background technology]

[0002] Patent Document 1 discloses a substrate processing method including a puddle formation step of forming a puddle of diluted developer diluted with pure water in the center of the substrate, a liquid film formation step of subsequently rotating the substrate at a first rotation speed to spread the puddle of diluted developer over the entire surface of the substrate and form a liquid film of the diluted developer, and a developer supply step of subsequently supplying developer from a nozzle having a liquid contact surface to form a puddle of developer between the substrate and the liquid contact surface while rotating the substrate at a second rotation speed slower than the first rotation speed, and moving the nozzle in a radial direction passing through the center of the substrate to supply developer onto the substrate. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2016-111345 Summary of the Invention [Problem to be solved by the invention]

[0004] The present disclosure provides a substrate processing method, a storage medium, and a substrate processing apparatus that are effective in making development processing uniform within the surface of a substrate. [Means for solving the problem]

[0005] A substrate processing method according to one aspect of the present disclosure includes: positioning a nozzle having one end face and an outlet opening into the end face so that the end face faces a surface of a substrate; performing a first development process in which the nozzle is moved while bringing the end face into contact with the developer on the surface of the substrate, while rotating the substrate and ejecting developer from the outlet at a first flow rate; and performing a second development process after the first development process in which the nozzle is moved while bringing the end face into contact with the developer on the surface of the substrate at a position facing the center of the surface of the substrate, while rotating the substrate, and ejecting developer from the outlet at a second flow rate greater than the first flow rate. [Effects of the Invention]

[0006] According to the present disclosure, a substrate processing method, a storage medium, and a substrate processing apparatus are provided that are effective in making the development process uniform within the surface of the substrate. [Brief explanation of the drawings]

[0007] [Figure 1] FIG. 1 is a perspective view schematically illustrating an example of a substrate processing system. [Figure 2] FIG. 2 is a side view schematically showing an example of a coating and developing apparatus. [Figure 3] FIG. 3 is a schematic diagram showing an example of a development unit. [Figure 4] FIG. 4 is a perspective view showing an example of a nozzle that ejects the developing solution. [Figure 5] FIG. 5 is a block diagram illustrating an example of a functional configuration of the control device. [Figure 6] FIG. 6 is a block diagram illustrating an example of a hardware configuration of the control device. [Figure 7] FIG. 7 is a flowchart showing an example of the pattern forming process. [Figure 8] FIG. 8 is a flowchart showing an example of a series of processes including the pre-wet process. [Figure 9] FIG. 9 is a schematic diagram for explaining an example of the pre-wet process. [Figure 10] FIG. 10 is a flowchart showing an example of a series of processes including the first development process. [Figure 11] 11(a) to 11(d) are schematic views for explaining an example of the first development treatment. [Figure 12] FIG. 12 is a flowchart showing an example of a series of processes including the second development process. [Figure 13] FIG. 13 is a schematic diagram for explaining an example of the second development process. [Figure 14] FIG. 14 is a flowchart showing an example of a series of processes including the first rinse process. [Figure 15] 15(a) to 15(c) are schematic views for explaining an example of the first rinse process. [Figure 16] FIG. 16 is a flowchart showing an example of a series of processes including the third development process. [Figure 17] FIG. 17 is a schematic diagram for explaining an example of the third development treatment. [Figure 18] FIG. 18 is a flowchart showing an example of a series of processes including the second development process. DETAILED DESCRIPTION OF THE INVENTION

[0008] An embodiment will be described below with reference to the drawings. In the description, the same elements or elements having the same functions are designated by the same reference numerals, and redundant description will be omitted.

[0009] [Substrate processing system] The substrate processing system 1 shown in FIG. 1 is a system that forms a photosensitive coating on a workpiece W, exposes the photosensitive coating, and develops the photosensitive coating. The workpiece W to be processed is, for example, a substrate, or a substrate on which a film, circuit, or the like has been formed by undergoing a predetermined process. One example of a substrate included in the workpiece W is a wafer containing silicon. The workpiece W (substrate) may be formed in a circular shape. The workpiece W to be processed may be a glass substrate, a mask substrate, an FPD (Flat Panel Display), or the like, or may be an intermediate product obtained by undergoing a predetermined process on such a substrate. The photosensitive coating is, for example, a resist film.

[0010] The substrate processing system 1 includes a coating / developing apparatus 2 and an exposure apparatus 3. The exposure apparatus 3 is an apparatus that exposes a resist film (photosensitive coating) formed on a workpiece W (substrate). Specifically, the exposure apparatus 3 irradiates an exposure target portion of the resist film with energy rays using a method such as immersion exposure. The coating / developing apparatus 2 performs a process of forming a resist film by applying a resist (chemical solution) to the surface of the workpiece W before the exposure process by the exposure apparatus 3, and then performs a development process of the resist film after the exposure process.

[0011] Hereinafter, as an example of a substrate processing apparatus, a configuration of a coating and developing apparatus 2 will be described. As shown in Figures 1 and 2, the coating and developing apparatus 2 includes a carrier block 4, a processing block 5, an interface block 6, and a control device 100 (control unit).

[0012] The carrier block 4 introduces the workpiece W into the coating and developing apparatus 2 and removes the workpiece W from the coating and developing apparatus 2. For example, the carrier block 4 can support a plurality of carriers C for the workpiece W and has a built-in transport device A1 including a transfer arm. The carrier C accommodates, for example, a plurality of circular workpieces W. The transport device A1 removes the workpiece W from the carrier C and delivers it to the processing block 5, and receives the workpiece W from the processing block 5 and returns it to the carrier C. The processing block 5 has processing modules 11, 12, 13, and 14.

[0013] The processing module 11 incorporates a coating unit U1, a heat treatment unit U2, and a transport device A3 that transports the workpiece W to these units. The processing module 11 forms an underlayer film on the surface of the workpiece W using the coating unit U1 and the heat treatment unit U2. The coating unit U1 applies a treatment liquid for forming the underlayer film onto the workpiece W. The heat treatment unit U2 performs various heat treatments associated with the formation of the underlayer film.

[0014] The processing module 12 incorporates a coating unit U1, a heat-treating unit U2, and a transport device A3 that transports the workpiece W to these units. The processing module 12 forms a resist film on the underlying film using the coating unit U1 and the heat-treating unit U2. The coating unit U1 applies a processing liquid for forming a resist film onto the underlying film. The processing liquid for forming the resist film may be a resist liquid with a medium viscosity or higher. The viscosity of the processing liquid for forming the resist film may be 50 cP to 1000 cP, 100 cP to 800 cP, or 200 cP to 600 cP. The heat-treating unit U2 performs various heat treatments associated with the formation of the resist film. The thickness of the resist film may be 5 μm to 30 μm, 6 μm to 25 μm, or 7 μm to 20 μm.

[0015] The processing module 13 incorporates a coating unit U1, a heat treatment unit U2, and a transport device A3 that transports the workpiece W to these units. The processing module 13 forms an upper layer film on the resist film using the coating unit U1 and the heat treatment unit U2. The coating unit U1 applies a treatment liquid for forming the upper layer film onto the resist film. The heat treatment unit U2 performs various heat treatments associated with the formation of the upper layer film.

[0016] The processing module 14 incorporates a developing unit U3, a thermal processing unit U4, and a transport device A3 that transports the workpiece W to these units. The processing module 14 uses the developing unit U3 and the thermal processing unit U4 to develop the resist film that has been subjected to exposure processing and to perform thermal processing associated with the development. The developing unit U3 applies a developer to the surface of the exposed workpiece W and then rinses it away with a rinse liquid to form a resist pattern (develops the resist film). The thermal processing unit U4 performs various thermal processes associated with the development. Specific examples of thermal processing include a pre-development bake (PEB: Post Exposure Bake) and a post-development bake (PB: Post Bake).

[0017] A shelf unit U10 is provided on the carrier block 4 side within the processing block 5. The shelf unit U10 is divided into multiple cells arranged in the vertical direction. A transport device A7 including a lifting arm is provided near the shelf unit U10. The transport device A7 raises and lowers the workpiece W between the cells of the shelf unit U10.

[0018] A shelf unit U11 is provided on the interface block 6 side in the processing block 5. The shelf unit U11 is divided into a plurality of cells arranged in the vertical direction.

[0019] The interface block 6 transfers the workpiece W to and from the exposure apparatus 3. For example, the interface block 6 has a built-in transport device A8 including a transfer arm, and is connected to the exposure apparatus 3. The transport device A8 transfers the workpiece W placed on the shelf unit U11 to the exposure apparatus 3. The transport device A8 receives the workpiece W from the exposure apparatus 3 and returns it to the shelf unit U11.

[0020] The control device 100 controls the coating and developing device 2 to perform the coating and developing process, for example, in the following procedure: First, the control device 100 controls the transport device A1 to transport the workpiece W in the carrier C to the shelf unit U10, and then controls the transport device A7 to place the workpiece W in a cell for the processing module 11.

[0021] Next, the control device 100 controls the transport device A3 to transport the workpiece W on the shelf unit U10 to the coating unit U1 and heat treatment unit U2 in the processing module 11. The control device 100 also controls the coating unit U1 and heat treatment unit U2 to form an underlayer film on the surface of the workpiece W. Thereafter, the control device 100 controls the transport device A3 to return the workpiece W on which the underlayer film has been formed to the shelf unit U10, and controls the transport device A7 to place the workpiece W in a cell for the processing module 12.

[0022] Next, the control device 100 controls the transport device A3 to transport the workpiece W from the shelf unit U10 to the coating unit U1 and heat treatment unit U2 in the processing module 12. The control device 100 also controls the coating unit U1 and heat treatment unit U2 to form a resist film on the surface of the workpiece W. Thereafter, the control device 100 controls the transport device A3 to return the workpiece W to the shelf unit U10, and controls the transport device A7 to place the workpiece W in a cell for the processing module 13.

[0023] Next, the control device 100 controls the transport device A3 to transport the workpiece W on the shelf unit U10 to each unit in the processing module 13. The control device 100 also controls the coating unit U1 and the heat treatment unit U2 to form an upper layer film on the resist film of the workpiece W. Thereafter, the control device 100 controls the transport device A3 to transport the workpiece W to the shelf unit U11.

[0024] Next, the control device 100 controls the transport device A8 to send the workpiece W on the shelf unit U11 to the exposure device 3. Thereafter, the control device 100 controls the transport device A8 to receive the workpiece W that has been subjected to the exposure process from the exposure device 3 and place it in a cell for the processing module 14 in the shelf unit U11.

[0025] Next, the control device 100 controls the transport device A3 to transport the workpiece W on the shelf unit U11 to each unit in the processing module 14, and controls the developing unit U3 and the heat treatment unit U4 to develop the resist film on the workpiece W. Thereafter, the control device 100 controls the transport device A3 to return the workpiece W to the shelf unit U10, and controls the transport devices A7 and A1 to return the workpiece W into the carrier C. This completes the coating and developing process.

[0026] The specific configuration of the substrate processing apparatus is not limited to the configuration of the coating and developing apparatus 2 exemplified above. The substrate processing apparatus may be any type as long as it includes the developing unit U3 and a control device 100 capable of controlling the developing unit U3.

[0027] (developing unit) Next, an example of the developing unit U3 will be described in detail with reference to Figures 3 and 4. As shown in Figure 3, the developing unit U3 has, for example, a rotation holder 30, a developer supply unit 40 (liquid supply unit), and a rinse liquid supply unit 60.

[0028] The rotary holding unit 30 holds and rotates the workpiece W. The rotary holding unit 30 has, for example, a holding unit 32 and a rotation drive unit 34. The holding unit 32 supports the back surface of the workpiece W with the front surface Wa of the workpiece W facing upward, and holds the workpiece W, for example, by vacuum suction or the like. The rotation drive unit 34 rotates the holding unit 32 around a vertical rotation axis Ax using a power source, for example, an electric motor. This causes the workpiece W to rotate around the rotation axis Ax. The holding unit 32 may hold the workpiece W so that the center of the workpiece W approximately coincides with the rotation axis Ax.

[0029] The developer supply unit 40 supplies developer to the surface Wa of the workpiece W held in the holder 32. The developer is a processing liquid for removing the portion of the resist film to be removed after exposure. The portion of the resist film to be removed is the portion that is soluble in the developer after the exposure process. If the developer is a positive type, the portion exposed in the exposure process is soluble in the developer. If the developer is a negative type, the portion not exposed in the exposure process is soluble in the developer. An example of a positive type developer is an alkaline solution. An example of a negative type developer is an organic solvent. The developer supply unit 40 has, for example, a nozzle 42, a tank 44, a pump 46, a valve 48, and a nozzle drive unit 52 (drive unit).

[0030] The nozzle 42 ejects the developer toward the surface Wa of the workpiece W. As shown in FIG. 4, the nozzle 42 includes one end face 42a and an ejection port 42b. The end face 42a faces the surface Wa of the workpiece W held by the holder 32. The ejection port 42b is provided in the end face 42a (opens at the end face 42a). The nozzle 42 may have a circular end face 42a, and the ejection port 42b may open at the center of the end face 42a. As an example, the center of the end face 42a substantially coincides with the center of the ejection port 42b.

[0031] The area of ​​the end face 42a is smaller than the area of ​​the surface Wa of the workpiece W. The area of ​​the end face 42a may be, for example, 1 to 15%, 1 to 11%, or 1 to 3% of the area of ​​the surface Wa of the workpiece W. The nozzle 42 may be made of a resin material such as PTFE. The nozzle 42 may include a plurality of discharge ports 42b scattered across the end face 42a. The shape (outline) of the discharge ports 42b may be circular or elliptical, polygonal, or slit-shaped. The area (opening area) of the discharge ports 42b may be approximately 0.3 to 5% of the area of ​​the end face 42a.

[0032] Returning to FIG. 3 , the nozzle 42 is connected to the tank 44 via a conduit 54. The tank 44 contains a developer. A pump 46 and a valve 48 are provided in the conduit 54. The pump 46 is, for example, a bellows pump, and pumps the developer from the tank 44 to the nozzle 42. The valve 48 is, for example, an air-operated valve, and adjusts the opening of the conduit 54. By controlling the valve 48, it is possible to switch between a state in which the developer is discharged from the nozzle 42 and a state in which the developer is not discharged from the nozzle 42. Furthermore, by controlling at least one of the pump 46 and the valve 48, it is possible to adjust the discharge flow rate of the developer from the nozzle 42 (the discharge flow rate per unit time).

[0033] The nozzle driving unit 52 adjusts the position of the nozzle 42. More specifically, the nozzle driving unit 52 moves the nozzle 42 across above the workpiece W with the end surface 42a facing downward, and raises and lowers the nozzle 42. For example, the nozzle driving unit 52 has a mechanism that moves the nozzle 42 along the surface Wa of the workpiece W using a power source such as an electric motor, and a mechanism that raises and lowers the nozzle 42 using a power source such as an electric motor. When moving the nozzle 42 along the surface Wa of the workpiece W, the nozzle driving unit 52 moves the nozzle 42 along a path that passes through the rotation axis Ax of the workpiece W. The nozzle driving unit 52 may move the nozzle 42 along a straight path, or may move the nozzle 42 along a curved path.

[0034] The rinse liquid supply unit 60 supplies a rinse liquid, which is different from the developer, to the surface Wa of the workpiece W held in the holder 32. The rinse liquid is used to wash away the developer. The rinse liquid is also used as a pre-wet liquid supplied to the surface Wa before the developer is supplied. The rinse liquid is, for example, pure water or DIW (Deionized Water). The rinse liquid supply unit 60 includes, for example, a nozzle 62, a tank 64, a pump 66, a valve 68, and a nozzle driver 72.

[0035] The nozzle 62 ejects the rinse liquid toward the surface Wa of the workpiece W. The nozzle 62 is connected to a tank 64 via a conduit 74. The tank 64 stores the rinse liquid. A pump 66 and a valve 68 are provided in the conduit 74. The pump 66 is, for example, a bellows pump, and pressure-feeds the rinse liquid from the tank 64 to the nozzle 62. The valve 68 is, for example, an air-operated valve, and adjusts the opening of the conduit 74. By controlling the valve 68, it is possible to switch between a state in which the rinse liquid is ejected from the nozzle 62 and a state in which the rinse liquid is not ejected from the nozzle 62. In addition, by controlling at least one of the pump 66 and the valve 68, it is also possible to adjust the flow rate of the rinse liquid ejected from the nozzle 62.

[0036] The nozzle driving unit 72 moves the nozzle 62 using a power source such as an electric motor. Specifically, the nozzle driving unit 72 moves the nozzle 62 along the surface Wa of the workpiece W with the discharge port of the nozzle 62 facing downward.

[0037] (Control device) Next, an example of the control device 100 will be described with reference to Figures 5 and 6. The control device 100 controls the coating and developing apparatus 2 including the developing unit U3. As shown in Figure 5, the control device 100 has, as functional components (hereinafter referred to as "functional modules"), for example, a pre-wet control unit 102, a first developing control unit 104, a second developing control unit 106, a first rinsing control unit 112, a third developing control unit 114, a second rinsing control unit 116, and a nozzle switching control unit 117. The processing performed by each functional module corresponds to the processing performed by the control device 100.

[0038] The pre-wet control unit 102 causes the developing unit U3 to perform a pre-wet process. The pre-wet process includes rotating the holder 32 that holds the workpiece W using the rotation drive unit 34, and supplying a rinse liquid to the surface Wa of the workpiece W using the rinse liquid supply unit 60 while rotating the workpiece W using the rotation holder 30.

[0039] The first development control unit 104 causes the developing unit U3 to perform a first development process. In the first development process, the nozzle 42 is positioned so that its end face 42a faces the surface Wa of the workpiece W, and developer is ejected from the ejection port 42b at a predetermined first flow rate while the workpiece W is rotated by the rotation holder 30. Then, the nozzle 42 is moved by the nozzle drive unit 52 while the end face 42a is brought into contact with the developer on the surface Wa of the workpiece W. The first flow rate is predetermined and may be, for example, 100 ml / min to 700 ml / min, 200 ml / min to 600 ml / min, or 300 ml / min to 500 ml / min. The rotation speed of the workpiece W during the first development process is, for example, 300 rpm to 1000 rpm.

[0040] In the first developing process, the end surface 42a comes into contact with the developing solution that has already been discharged from the nozzle 42 and supplied onto the surface Wa during the first developing process, and with the rinse solution that has been supplied in the pre-wet process. Hereinafter, the state in which the end surface 42a of the nozzle 42 is in contact with the processing solution, including the developing solution, on the surface Wa of the workpiece W will be referred to as the "liquid contact state." In the first developing process, the developer is discharged at a first flow rate from the discharge port 42b of the nozzle 42 that faces the surface Wa of the workpiece W while the workpiece W is being rotated, and the nozzle 42 is moved along the surface Wa while maintaining the liquid contact state, simultaneously.

[0041] The first development control unit 104 may cause the nozzle 42 to reciprocate along the radial direction of the workpiece W using the nozzle drive unit 52 while maintaining contact with the developer, while rotating the workpiece W and discharging the developer from the discharge port 42b at a first flow rate. For example, the first development control unit 104 causes the nozzle 42 to reciprocate using the nozzle drive unit 52 between a position facing the center (rotation axis Ax) of the surface Wa of the workpiece W and a position facing the outer periphery Wb of the workpiece W. When the nozzle 42 faces the center of the workpiece W, either the end face 42a or the discharge port 42b overlaps with the center of the workpiece W as viewed vertically from above. When the nozzle 42 faces the outer periphery Wb of the workpiece W, either the end face 42a or the discharge port 42b overlaps with the outer periphery Wb of the workpiece W as viewed vertically from above. In one example, the first development control unit 104 moves the workpiece W back and forth using the nozzle drive unit 52 between a position where the discharge outlet 42b overlaps with the center of the workpiece W and a position where the discharge outlet 42b overlaps with the outer periphery Wb of the workpiece W, when viewed from vertically above.

[0042] The first development control unit 104 may cause the developing unit U3 to perform a scan-out process in the first development process, and then cause the developing unit U3 to perform a scan-in process after the scan-out process. The scan-out process is a process in which the nozzle 42 is moved by the nozzle drive unit 52 from the center of the workpiece W toward the outer periphery Wb of the workpiece W while bringing the end face 42a into contact with the developer on the surface Wa of the workpiece W, while the workpiece W is being rotated by the rotary holder 30 and developer is being discharged from the discharge port 42b at a first flow rate. In one example, the first development control unit 104 causes the nozzle 42 to move by the nozzle drive unit 52 from a position where the discharge port 42b of the nozzle 42 faces the center of the workpiece W to a position where the discharge port 42b faces the outer periphery Wb, while maintaining the developer contact state.

[0043] The scan-in process is a process in which the nozzle 42 is moved by the nozzle drive unit 52 from the outer periphery Wb of the workpiece W toward the center of the workpiece W while the end face 42a is in contact with the developer on the surface Wa of the workpiece W, while the workpiece W is being rotated by the rotation holder 30 and developer is being discharged from the discharge port 42b at a first flow rate. In one example, the first development control unit 104 moves the nozzle 42 by the nozzle drive unit 52 from a position where the discharge port 42b faces the outer periphery Wb of the workpiece W to a position where the discharge port 42b of the nozzle 42 faces the center of the workpiece W, while maintaining the developer in a wetted state. Between the execution periods of the scan-out process and the scan-in process, the first development control unit 104 may stop the nozzle 42 at a position facing the outer periphery Wb of the workpiece W for a predetermined time by the nozzle drive unit 52 while developer is being discharged from the discharge port 42b at a first flow rate in a wetted state.

[0044] After the first development process, the second development control unit 106 causes the developing unit U3 to perform a second development process. The second development process is a process in which the workpiece W is rotated by the rotation holder 30, and the end surface 42a is brought into contact with the developing solution on the surface Wa of the workpiece W at a position facing the center of the surface Wa of the workpiece W, and the developing solution is discharged from the discharge port 42b at a predetermined second flow rate. The second flow rate is preset to a value greater than the first flow rate. As an example, the second flow rate may be 300 ml / min to 900 ml / min, 400 ml / min to 800 ml / min, or 500 ml / min to 700 ml / min.

[0045] The second development control unit 106 may cause the developing unit U3 to continuously perform the second development process, in which the developer is discharged at the second flow rate, for a predetermined time (the developer supply unit 40 may continue to discharge the developer at the second flow rate for a predetermined time). The predetermined time for continuously performing the second development process is, for example, 5 to 20 seconds. The rotation speed of the workpiece W during the second development process is, for example, 100 to 1000 rpm.

[0046] The second development control unit 106 may increase the discharge flow rate of the developer from the nozzle 42 from the first flow rate to the second flow rate, with the nozzle 42 positioned at a position facing the center of the surface Wa of the workpiece W by the first development process, and cause the developing unit U3 to start the second development process. The second development control unit 106 may increase the discharge flow rate to the second flow rate while keeping the nozzle 42 stopped by the nozzle drive unit 52 at the position where the nozzle 42 was positioned at the end of the scan-in process of the first development process, and start the second development process. The second development control unit 106 may increase the discharge flow rate to the second flow rate while moving the nozzle 42 by the nozzle drive unit 52 to a position within the region where the nozzle 42 faces the center of the surface Wa of the workpiece W, different from the position where the nozzle 42 was positioned at the end of the scan-in process of the first development process, and start the second development process.

[0047] After the second developing process, the first rinse control unit 112 causes the developing unit U3 to perform a first rinse process. The first rinse process is a process in which the rinse liquid supply unit 60 supplies rinse liquid to the front surface Wa of the workpiece W while the workpiece W is rotated by the rotation holding unit 30. After the first rinse process is performed, the first rinse control unit 112 may cause the rotation holding unit 30 to continue rotating the workpiece W so as to shake off the rinse liquid on the front surface Wa of the workpiece W, while stopping the supply of rinse liquid by the rinse liquid supply unit 60.

[0048] The discharge flow rate (discharge flow rate per unit time) of the rinse liquid from the nozzle 62 (another nozzle) toward the surface Wa in the first rinse process is set to a predetermined third flow rate. The third flow rate is set to a value equal to or greater than the second flow rate, which is the discharge flow rate of the developer in the second development process. In one example, the third flow rate is 500 ml / min to 1500 ml / min. The rotation speed of the workpiece W in the first rinse process may be set to a value equal to or greater than the rotation speed of the workpiece W in the second development process. In one example, the rotation speed of the workpiece W in the first rinse process is 100 rpm to 1500 rpm. In one example, the execution time of the first rinse process is 3 seconds to 15 seconds.

[0049] The third development control unit 114 controls the developing unit U3 to perform a third development process after the second development process (e.g., after the first rinse process). The third development process is a process in which developer is supplied from the nozzle 42 to the surface Wa of the workpiece W so as to form a puddle of developer, and the spin holder 30 is controlled to hold the puddle on the surface Wa of the workpiece W. For example, in the third development process, the third development control unit 114 controls the developing unit U3 to perform a process similar to the scan-out process of the first development process (hereinafter referred to as the "scan-out process in the third development process") in order to form a puddle of developer on the surface Wa of the workpiece W. In the scan-out process in the third development process, the third development control unit 114 may eject developer from the nozzle 42 at a first flow rate, as in the first development process. In parallel with the scan-out process in the third development process, the third development control unit 114 controls the spin holder 30 to perform a deceleration process to reduce the rotational speed of the workpiece W.

[0050] In the deceleration process, the third development control unit 114 controls the rotation holding unit 30 to decelerate the rotation of the workpiece W from one rotation speed (e.g., 200 rpm to 400 rpm) to a different rotation speed (e.g., 5 rpm to 20 rpm). The deceleration process may include controlling the rotation holding unit 30 to gradually reduce the rotation speed of the workpiece W as the center (discharge port 42b) of the end face 42a of the nozzle 42 approaches the outer periphery Wb of the workpiece W. In this case, the gradual reduction may also include reducing the rotation speed in multiple stages. The third development control unit 114 may control the rotation holding unit 30 to gradually reduce the deceleration of the rotation of the workpiece W as the center of the end face 42a approaches the outer periphery Wb of the workpiece W. By performing the deceleration control in parallel with the scan-out process in the third development process, excessive development in the central portion of the workpiece W is suppressed during the process of forming a puddle of developer, and the collapse of the puddle at the outer periphery of the workpiece W is suppressed.

[0051] The third development control unit 114 may rotate the workpiece W using the rotation holding unit 30 at a low rotation speed (for example, a rotation speed equal to or lower than the rotation speed at the completion of the deceleration process) so that a puddle of developer is held on the surface Wa of the workpiece W, or may stop the rotation of the workpiece W using the rotation holding unit 30. For example, after the puddle of developer is formed, the third development control unit 114 performs a scan-in operation (scan-in process in the third development step) in which, similar to the first development process, the nozzle 42 is moved by the nozzle driving unit 52 from the outer periphery Wb of the workpiece W toward the center of the workpiece W while contacting the end face 42a with the developer on the surface Wa of the workpiece W, while rotating the workpiece W using the rotation holding unit 30. Thereafter, the third development control unit 114 controls the development unit U3 to maintain the state in which the rotation of the workpiece W is stopped for a predetermined time (causing the development unit U3 to perform static development). In this static development, the third development control unit 114 may stop the discharge of developer from the nozzle 42 to the developer supply unit 40, or may continue the discharge of developer to the developer supply unit 40 at a predetermined flow rate set to be suitable for removing dissolved products and replacing the developer, etc.

[0052] The second rinse control unit 116 causes the developing unit U3 to perform a second rinse process after the third development process. The second rinse control unit 116 causes the developing unit U3 to perform the second rinse process, for example, in the same manner as the first rinse process described above. The discharge flow rate of the rinse liquid and the rotation speed of the workpiece W in the second rinse process may be the same as or different from the discharge flow rate and rotation speed in the first rinse process. After the second rinse process is performed, the second rinse control unit 116 may stop the supply of rinse liquid by the rinse liquid supply unit 60 and continue to rotate the workpiece W by the spin holder 30 so as to shake off (dry) the rinse liquid on the surface Wa of the workpiece W.

[0053] The nozzle switching control unit 117 controls the nozzle drive unit 52 to perform at least one of positioning and retracting of the nozzle 42 before and after each of the first developing process, second developing process, and third developing process. For example, after the second developing process or after the static development in the third developing process, the nozzle switching control unit 117 controls the nozzle drive unit 52 to raise the nozzle 42 above the surface Wa of the workpiece W from a state in which the end surface 42a of the nozzle 42 is in contact with the developer on the surface Wa of the workpiece W. The nozzle switching control unit 117 then controls the nozzle drive unit 52 to retract the raised nozzle 42 outside the workpiece W. The nozzle switching control unit 117 controls the nozzle drive unit 72 to perform at least one of positioning and retracting of the nozzle 42 before and after each of the pre-wet process, first rinsing process, and second rinsing process.

[0054] The nozzle switching control unit 117 may control the nozzle driving unit 52 to perform multiple retraction operations to retract the nozzle 42 when raising the nozzle 42 above the surface Wa of the workpiece W. Each of the multiple retraction operations (each retraction operation) includes raising the nozzle 42 by a predetermined amount and stopping the nozzle 42 after the raising. By performing multiple retraction operations, an operation of raising the nozzle 42 in stages (nozzle operation including multiple raising steps) is performed. The nozzle switching control unit 117 may control the nozzle driving unit 52 so that the raising speed of the nozzle 42 differs between the multiple raising steps so that no liquid adhered to the end surface 42a remains.

[0055] A standby bath (not shown) may be provided outside the cup surrounding the holder 32 that holds the workpiece W. The standby bath has the function of allowing the nozzle 42 to wait inside and clean the end surface 42a with a cleaning liquid when the nozzle 42 is not in use and not being processed. In this case, the nozzle switching control unit 117 may control the nozzle drive unit 52 to perform a nozzle operation including multiple upward steps, as described above, when moving the nozzle 42 from inside the standby bath to outside in order to move the nozzle 42 above the cup at the start of liquid processing. This prevents liquid from adhering to the end surface 42a of the nozzle 42 inside the standby bath.

[0056] The control device 100 is configured with one or more control computers. For example, the control device 100 has a circuit 120 shown in FIG. 6. The circuit 120 has one or more processors 122, a memory 124, a storage 126, an input / output port 128, and a timer 132. The storage 126 has a computer-readable storage medium, such as a hard disk. The storage medium stores a program for causing the control device 100 to execute a substrate processing method, which will be described later. The storage medium may be a removable medium, such as a non-volatile semiconductor memory, a magnetic disk, or an optical disk. The memory 124 temporarily stores the program loaded from the storage medium of the storage 126 and the results of calculations performed by the processor 122.

[0057] The processor 122 executes the above program in cooperation with the memory 124. The input / output port 128 inputs and outputs electrical signals between the spin holder 30, the developer supply unit 40, the rinse liquid supply unit 60, etc., in accordance with commands from the processor 122. The timer 132 measures elapsed time, for example, by counting reference pulses at a fixed interval. The hardware configuration of the control device 100 may be configured using a dedicated logic circuit or an ASIC (Application Specific Integrated Circuit) that integrates such a circuit.

[0058] [Substrate processing method] Next, a pattern forming process executed in the developing unit U3 will be described as an example of a substrate processing method with reference to Fig. 7. Fig. 7 is a flowchart showing an example of a pattern forming process for one workpiece W.

[0059] The control device 100 first executes step S01 with the workpiece W to be processed placed in the developing unit U3 (spin holder 30). In step S01, for example, the pre-wet control unit 102 causes the developing unit U3 to execute the above-described pre-wet process. While the workpiece W is being rotated by the spin holder 30, the pre-wet control unit 102 supplies a rinse liquid to the surface Wa of the workpiece W using the rinse liquid supply unit 60. A specific example of the pre-wet process will be described later.

[0060] Next, the control device 100 executes step S02. In step S02, for example, the first development control unit 104 causes the developing unit U3 to execute the first development process described above. While the workpiece W is being rotated by the rotation holding unit 30, the first development control unit 104 causes the nozzle 42 (discharge port 42b) to discharge the developing solution at the first flow rate toward the surface Wa of the workpiece W, and causes the nozzle drive unit 52 to move the nozzle 42 while bringing the end face 42a of the nozzle 42 into contact with the processing solution on the surface Wa of the workpiece W. A specific example of the first development process will be described later.

[0061] Next, the control device 100 executes step S03. In step S03, for example, the second development control unit 106 causes the developing unit U3 to execute the second development process described above. While the workpiece W is being rotated by the rotation holder 30, the second development control unit 106 causes the developer to be discharged at a second flow rate from the discharge port 42b of the nozzle 42, with the end face 42a of the nozzle 42 positioned opposite the center of the surface Wa of the workpiece W in contact with the developer on the surface Wa of the workpiece W. A specific example of the second development process will be described later.

[0062] Next, the control device 100 executes step S04. In step S04, for example, the first rinse control unit 112 causes the developing unit U3 to execute a first rinse process. The first rinse control unit 112 may supply a rinse liquid to the surface Wa of the workpiece W using the rinse liquid supply unit 60 while the workpiece W is being rotated by the rotation holder 30. A specific example of the first rinse process will be described later.

[0063] Next, the control device 100 executes step S05. In step S05, for example, the third development control unit 114 causes the developing unit U3 to execute a third development process. The third development control unit 114 supplies the developer from the nozzle 42 to the surface Wa of the workpiece W so as to form a puddle of the developer, and controls the rotation holding unit 30 so as to hold the puddle of the developer on the surface Wa of the workpiece W. A specific example of the third development process will be described later.

[0064] Next, the control device 100 executes step S06. In step S06, for example, the second rinse control unit 116 causes the developing unit U3 to execute a second rinse process. The second rinse control unit 116 causes the developing unit U3 to execute a second rinse process, similar to the first rinse process in step S04. This completes the pattern formation process for one workpiece W. Each of the above steps S01 to S05 will be described below, including the processes before and after each step.

[0065] (Pre-wet processing) 8 is a flowchart showing an example of a series of processes including the pre-wet process of step S01 and processes before and after the pre-wet process. First, the control device 100 executes steps S11 and S12 while the spin holder 30 holds the workpiece W to be processed. In step S11, for example, the control device 100 causes the spin holder 30 to start rotating the workpiece W. In subsequent steps, the rotation of the workpiece W continues until the control device 100 causes the spin holder 30 to stop the rotation of the workpiece W. In step S12, for example, the nozzle switching control unit 117 controls the nozzle drive unit 72 to position the nozzle 62 of the rinse liquid supply unit 60 at a position facing the center (rotation axis Ax) of the surface Wa of the workpiece W.

[0066] Next, the control device 100 executes step S13. In step S13, for example, the pre-wet control unit 102 causes the rinse liquid supply unit 60 to start supplying the rinse liquid from the nozzle 62 to the front surface Wa of the workpiece W. The pre-wet control unit 102 may cause the rinse liquid supply unit 60 to start supplying the rinse liquid by switching the valve 68 of the rinse liquid supply unit 60 from a closed state to an open state. As a result, the rinse liquid (pre-wet liquid) begins to be discharged from the nozzle 62 onto the front surface Wa of the workpiece W being rotated by the spin holder 30, and the pre-wet process begins.

[0067] Next, the control device 100 executes step S14. In step S14, for example, the pre-wet control unit 102 waits until a pre-wet time has elapsed since the start of supplying the rinse liquid in step S13. The pre-wet time is set in advance and is set to a time sufficient for a desired amount of rinse liquid to be supplied onto the surface Wa.

[0068] Next, the control device 100 executes step S15. In step S15, for example, the pre-wet control unit 102 causes the rinse liquid supply unit 60 to stop supplying the rinse liquid from the nozzle 62 to the front surface Wa of the workpiece W. The pre-wet control unit 102 may cause the rinse liquid supply unit 60 to stop supplying the rinse liquid by switching the valve 68 of the rinse liquid supply unit 60 from an open state to a closed state (or may cause the nozzle 62 to stop discharging the rinse liquid). By executing the above steps S13 to S15 (pre-wet processing), as shown in FIG. 9, the rinse liquid is supplied onto the front surface Wa of the workpiece W while the workpiece W rotates around the rotation axis Ax, and a liquid film RF of the rinse liquid is formed on the front surface Wa.

[0069] Next, the control device 100 executes step S16. In step S16, for example, the nozzle switching control unit 117 controls the nozzle driving unit 72 to retract the nozzle 62 from the center of the surface Wa of the workpiece W to the outside of the workpiece W. This completes the series of processes including the pre-wet process.

[0070] (First development process) 10 is a flowchart showing an example of a series of processes including the first developing process of step S02 and processes before and after the first developing process. The control device 100 executes steps S21 and S22 after executing step S16 described above. In step S21, for example, the control device 100 controls the rotation holder 30 so that the rotation speed of the workpiece W is adjusted to the set value for the first developing process. In step S22, for example, the nozzle switching control unit 117 controls the nozzle drive unit 52 so that the nozzle 42 of the developer supply unit 40 is positioned opposite the center (rotation axis Ax) of the surface Wa of the workpiece W. The nozzle switching control unit 117 may also control the nozzle drive unit 72 so that the nozzle 42 is positioned so that the outlet 42b of the nozzle 42 is opposite the center of the surface Wa of the workpiece W.

[0071] Next, the control device 100 executes step S23. In step S23, for example, the first development control unit 104 causes the developing unit U3 to start discharging the developer from the nozzle 42 and moving the nozzle 42 toward the outer periphery Wb of the workpiece W. This starts the scan-out process described above. As shown in FIG. 11(a), the first development control unit 104 causes the developer supply unit 40 to start discharging the developer from the outlet 42b of the nozzle 42 facing the center of the workpiece W, and causes the nozzle drive unit 52 to start moving the nozzle 42 from the center of the workpiece W toward the outer periphery Wb. The first development control unit 104 may start discharging the developer from the outlet 42b by switching the valve 48 of the developer supply unit 40 from a closed state to an open state. The first development control unit 104 controls the pump 46 or the valve 48 so that the discharge flow rate from the outlet 42b becomes the first flow rate.

[0072] Next, the control device 100 executes step S24. In step S24, for example, the first development control unit 104 waits until the nozzle 42 moves to a position where the discharge port 42b faces the outer periphery Wb. The first development control unit 104 determines whether the nozzle 42 has moved to a position where it faces the outer periphery Wb, for example, based on the rotation angle of a motor included in the nozzle drive unit 52. As a result, as shown in FIG. 11(b), the nozzle 42, which is discharging the developer at the first flow rate, moves from the center of the rotating workpiece W toward the outer periphery Wb while contacting the developer on the surface Wa of the workpiece W.

[0073] Next, the control device 100 executes step S25. In step S25, for example, the first development control unit 104 causes the nozzle drive unit 52 to stop the movement of the nozzle 42. This ends the scan-out process. In the above steps S23 to S25 (scan-out process), the first development control unit 104 controls the developer supply unit 40 to eject the developer from the nozzle 42 at a first flow rate, and causes the nozzle drive unit 52 to move the nozzle 42 from the center of the workpiece W toward the outer periphery Wb of the workpiece W while maintaining the nozzle 42 in a liquid-contact state.

[0074] Next, the control device 100 executes step S26. In step S26, for example, the first development control unit 104 waits until a predetermined adjustment time has elapsed since the movement of the nozzle 42 stopped in step S25. The first development control unit 104 controls the developer supply unit 40 to discharge the developer from the nozzle 42 at a first flow rate with the discharge port 42b facing the outer periphery Wb of the workpiece W until the adjustment time has elapsed. The adjustment time is set in advance depending on how much development is to proceed at the outer periphery of the workpiece W in the first development process.

[0075] Next, the control device 100 executes step S27. In step S27, for example, the first development control unit 104 causes the developing unit U3 to start moving the nozzle 42 toward the center of the workpiece W. This starts the above-mentioned scan-in process. The first development control unit 104 causes the nozzle drive unit 52 to start moving the nozzle 42 from the outer periphery Wb of the workpiece W toward the center, while continuing to discharge the developer at the first flow rate from the discharge port 42b of the nozzle 42 that is in contact with the developer puddle DF.

[0076] Next, the control device 100 executes step S28. In step S28, for example, the first development control unit 104 waits until the nozzle 42 moves to a position (rotation axis Ax) where the discharge port 42b faces the center of the workpiece W. The first development control unit 104 determines whether the nozzle 42 has moved to a position facing the center of the workpiece W, for example, according to the rotation angle of a motor included in the nozzle drive unit 52. As a result, as shown in FIG. 11(d), the nozzle 42, which is discharging the developer at the first flow rate, moves from the outer periphery Wb of the rotating workpiece W toward the center while contacting the developer on the surface Wa of the workpiece W.

[0077] Next, the control device 100 executes step S29. In step S29, for example, the first development control unit 104 causes the nozzle drive unit 52 to stop the movement of the nozzle 42. This ends the scan-in process. In the above steps S27 to S29 (scan-in process), the first development control unit 104 controls the developer supply unit 40 to eject the developer from the nozzle 42 at a first flow rate, and causes the nozzle drive unit 52 to move the nozzle 42 from the outer periphery Wb of the workpiece W toward the center while maintaining the nozzle 42 in a liquid-contact state. This ends a series of processes including the first development process.

[0078] (Second development process) 12 is a flowchart showing an example of a series of processes including the second developing process of step S03 and processes before and after the second developing process. After the above-mentioned step S29 is executed, the control device 100 executes step S31. In step S31, for example, the control device 100 controls the rotation holding unit 30 so that the rotation speed of the workpiece W is adjusted to the set value in the first developing process.

[0079] Next, the control device 100 executes step S32. In step S32, for example, as shown in FIG. 13 , the second development control unit 106 controls the developer supply unit 40 to increase the discharge flow rate from the discharge port 42b to a second flow rate while causing the nozzle drive unit 52 to maintain the state in which the discharge port 42b faces the center of the workpiece W upon completion of the scan-in process in step S29. To increase the flow rate to the second flow rate, the second development control unit 106 may control the valve 48 of the developer supply unit 40 to increase the opening of the valve 48, or may control the pump 46 to increase the pressure for pumping the developer by the pump 46. When the discharge flow rate of the developer from the discharge port 42b increases to the second flow rate, the second development process is initiated.

[0080] Next, the control device 100 executes step S33. In step S33, for example, the second development control unit 106 waits until a center discharge time has elapsed since the start of the second development process in step S32. The center discharge time is set in advance and is set to a time period during which development of the resist film progresses sufficiently in the development process including this second development process, the first development process in step S02, and the third development process in step S05, which will be described in detail later.

[0081] Next, the control device 100 executes step S34. In step S34, for example, the second development control unit 106 controls the developer supply unit 40 to stop discharging the developer from the nozzle 42. The second development control unit 106 stops discharging the developer from the outlet 42b of the nozzle 42 by switching the valve 48 of the developer supply unit 40 from an open state to a closed state. In the above steps S32 to S34 (second developing process), the second development control unit 106 controls the developer supply unit 40 to discharge the developer from the nozzle 42 at a second flow rate while maintaining the nozzle 42 in a liquid-contact state at a position facing the center of the surface Wa of the workpiece W.

[0082] Next, the control device 100 executes step S35. In step S35, for example, the nozzle switching control unit 117 controls the nozzle drive unit 52 to retract the nozzle 42 from the center of the surface Wa of the workpiece W to the outside of the workpiece W. At this time, a pool of developer DF is formed on the surface Wa of the workpiece W. This completes a series of processes including the second development process. Note that when retracting the nozzle 42 in step S35, the nozzle switching control unit 117 may control the nozzle drive unit 52 to perform the above-mentioned retraction operation multiple times to raise the nozzle 42 in stages.

[0083] (First rinse process) 14 is a flowchart showing an example of a series of processes including the first rinse process of step S04 and processes before and after the first rinse process. After executing the above-mentioned step S35, the control device 100 executes steps S41 and S42. In step S41, for example, the control device 100 controls the rotation holder 30 so that the rotation speed of the workpiece W is adjusted to the set value for the first rinse process. In step S42, for example, the nozzle switching control unit 117 controls the nozzle drive unit 72 so that the nozzle 62 of the rinse liquid supply unit 60 is positioned opposite the center (rotation axis Ax) of the surface Wa of the workpiece W.

[0084] Next, the control device 100 executes steps S43 and S44. In step S43, for example, the first rinse control unit 112 controls the rinse liquid supply unit 60 to start supplying the rinse liquid to the surface Wa of the workpiece W from the nozzle 62 disposed on the rotation axis Ax, as shown in FIG. 15(a). The first rinse control unit 112 may start discharging the rinse liquid from the nozzle 62 by switching the valve 68 of the rinse liquid supply unit 60 from a closed state to an open state. The first rinse control unit 112 may control the pump 66 or the valve 68 so that the discharge flow rate of the rinse liquid from the nozzle 62 becomes the third flow rate. In step S44, for example, the first rinse control unit 112 waits from the start of discharging the rinse liquid in step S43 until a rinse time has elapsed. The rinse time is set in advance, and is set, for example, to a time period during which the developer puddle DF on the surface Wa of the workpiece W is replaced with a rinse liquid film RF, as shown in FIG. 15(b).

[0085] Next, the control device 100 executes step S45. In step S45, for example, the first rinse control unit 112 controls the rinse liquid supply unit 60 to stop supplying the rinse liquid from the nozzle 62 to the front surface Wa of the workpiece W. The first rinse control unit 112 may stop ejection of the rinse liquid from the nozzle 62 by switching the valve 68 of the rinse liquid supply unit 60 from an open state to a closed state. In the above steps S42 to S44 (first rinse process), the second rinse control unit 116 ejects the rinse liquid from the nozzle 62 at a third flow rate toward the front surface Wa of the workpiece W being rotated, thereby supplying the rinse liquid to the front surface Wa of the workpiece W.

[0086] Next, the control device 100 executes steps S46 and S47. In step S46, for example, the nozzle switching control unit 117 controls the nozzle drive unit 72 to retract the nozzle 62 from the center of the workpiece W to the outside of the workpiece W. In step S47, for example, the control device 100 waits until a shake-off time has elapsed since the supply of the rinse liquid was stopped in step S45. The shake-off time is set in advance and, for example, as shown in FIG. 15(c), is set to a time period during which at least a portion of the rinse liquid on the surface Wa of the workpiece W is shaken off to the outside of the workpiece W. Note that the control device 100 may also control the spin holder 30 to increase the rotation speed of the workpiece W after the supply of the rinse liquid is stopped above the rotation speed during the first rinse process. This completes a series of processes including the first rinse process.

[0087] (Third development process) 16 is a flowchart showing an example of a series of processes including the third developing process of step S05 and processes before and after the third developing process. After executing step S47 described above, the control device 100 executes steps S51 and S52. In step S51, for example, the control device 100 controls the rotation holder 30 so that the rotation speed of the workpiece W is adjusted to the set value for the third developing process. In step S52, for example, the nozzle switching control unit 117 controls the nozzle drive unit 52 so that the nozzle 42 of the developer supply unit 40 is positioned so that the outlet 42b of the nozzle 42 faces the center (rotation axis Ax) of the surface Wa of the workpiece W.

[0088] Next, the control device 100 executes step S53. In step S53, for example, the third development control unit 114 causes the developing unit U3 to start discharging the developer from the nozzle 42, moving the nozzle 42 toward the outer periphery Wb, and slowing down the rotational speed of the workpiece W. The third development control unit 114 causes the developer supply unit 40 to start discharging the developer from the outlet 42b of the nozzle 42, and causes the nozzle drive unit 52 to start moving the nozzle 42 from the center of the workpiece W toward the outer periphery Wb. The third development control unit 114 may start discharging the developer from the nozzle 42 by switching the valve 48 of the developer supply unit 40 from a closed state to an open state. The third development control unit 114 may control the developer supply unit 40 so that the discharge flow rate of the developer from the nozzle 42 becomes the first flow rate.

[0089] Next, the control device 100 executes step S54. In step S54, for example, the third development control unit 114 waits until the nozzle 42 moves to a position where the discharge port 42b faces the outer periphery Wb. The third development control unit 114 determines whether the nozzle 42 has moved to a position where it faces the outer periphery Wb, for example, based on the rotation angle of the motor included in the nozzle drive unit 52. As a result, the nozzle 42, which is in contact with the developing solution formed on the surface Wa of the workpiece W by the discharge of the developing solution in the process, moves from the center of the rotating workpiece W toward the outer periphery Wb while continuing to discharge the developing solution (the scan-out process in the third development process is performed). At this time, the third development control unit 114 may control the rotation holding unit 30 to gradually reduce the rotation speed of the workpiece W as the center (discharge port 42b) of the end face 42a of the nozzle 42 approaches the outer periphery Wb of the workpiece W.

[0090] Next, the control device 100 executes step S55. In step S55, for example, the third development control unit 114 stops the discharge of the developer from the nozzle 42 and the movement of the nozzle 42 using the developer supply unit 40, and causes the rotation holding unit 30 to complete the deceleration of the rotation of the workpiece W. The third development control unit 114 stops the discharge of the developer from the nozzle 42 by switching the valve 48 from an open state to a closed state.

[0091] Next, the control device 100 executes steps S56 and S57. In step S56, for example, the nozzle switching control unit 117 controls the nozzle drive unit 52 to retract the nozzle 42, which is stopped at a position facing the outer periphery Wb of the workpiece W, outside the workpiece W. Note that, when retracting the nozzle 42 in step S56, the nozzle switching control unit 117 may control the nozzle drive unit 52 to perform the above-mentioned retraction operation multiple times to raise the nozzle 42 in stages. In step S57, for example, the third development control unit 114 controls the rotation holding unit 30 to stop the rotation of the workpiece W.

[0092] Next, the control device 100 executes step S58. In step S58, for example, the third development control unit 114 waits until the development time has elapsed since the discharge of the developer was stopped in step S55. In this case, as shown in FIG. 17, the state in which the puddle DF of the developer has been formed on the surface Wa of the workpiece W is maintained by stopping the rotation of the workpiece W. Note that the third development control unit 114 may maintain the state in which the puddle DF of the developer has been formed in the developing unit U3 by using the rotation holding unit 30 to maintain the workpiece W at a low rotation speed (for example, the rotation speed at the end of the deceleration control in step S56) without stopping the rotation of the workpiece W. The development time is set in advance and is set to a time that allows the development of the resist film to proceed sufficiently. In step S58, the development time has elapsed, and thus the series of processes including the third development process are completed.

[0093] (Variation) The above-described pattern formation process and the procedure of each step included in the process are merely examples and can be modified as appropriate. For example, some of the above-described steps (processes) may be omitted, or the steps may be performed in a different order. Furthermore, any two or more of the above-described steps may be combined, or some of the steps may be modified or deleted. Alternatively, other steps may be performed in addition to the above-described steps.

[0094] The second development control unit 106 may cause the developing unit U3 to intermittently perform the second development process, with a period in between in which the discharge flow rate of the developer from the nozzle 42 is smaller than the second flow rate. During the period in which the discharge flow rate is smaller than the second flow rate, the control device 100 may control the developer supply unit 40 so that the developer is discharged from the nozzle 42 at a flow rate smaller than the second flow rate. Alternatively, the control device 100 may control the developer supply unit 40 so that the developer is not discharged from the nozzle 42 (so that discharge is stopped). In this way, the period in which the discharge flow rate is smaller than the second flow rate includes a period in which the developer is discharged at a flow rate smaller than the second flow rate and a period in which the developer is not discharged. During the period in which the discharge flow rate is smaller than the second flow rate, the control device 100 may cause the rotation holder 30 to maintain the rotation of the workpiece W at the same rotational speed as that in the second development process.

[0095] When the second developing process is performed intermittently, the second developing control unit 106 may control the rotation holding unit 30 so that the rotation speed of the workpiece W during the second developing process is greater than the rotation speed of the workpiece W during the period when the discharge flow rate is smaller than the second flow rate during the intermittently performed second developing process. By making the rotation speed during the second developing process greater than the rotation speed during the period when the discharge flow rate is smaller than the second flow rate, removal of the dissolved product may be promoted and the degree of progress of development may be adjusted.

[0096] The height position of the nozzle 42 when discharging the developer at the second flow rate in the second development process may be higher than the height position of the nozzle 42 in other development processes, such as the first and third development processes. For example, before starting the second development process, the control device 100 may control the nozzle drive unit 52 to move the nozzle 42 upward after the first development process is completed. In this case, the portion of the end face 42a that contacts the developer on the surface Wa of the workpiece W in the second development process is smaller than the portion that contacts the developer in the first development process. In this state, even if the developer discharge flow rate is reduced, the amount of liquid pooling vertically below the discharge port 42b is smaller than in a state in which almost the entire end face 42a contacts the developer on the surface Wa of the workpiece W. Therefore, the flow of the developer is more likely to change (change smoothly), reducing the possibility of a pressure drop in the developer that could cause bubbles or a momentary liquid shortage.

[0097] The second development control unit 106 may change the rotation direction of the workpiece W during the second development process. Specifically, the second development control unit 106 may control the rotation holding unit 30 to alternately rotate the workpiece W in one rotation direction (for example, clockwise) and the opposite rotation direction (for example, counterclockwise). By rotating the workpiece W in both forward and reverse directions during the second development process, the flow of developer at each position on the surface Wa of the workpiece W changes between forward and reverse rotation. This allows for efficient removal of dissolved products from the surface Wa of the workpiece W where pattern generation by development has begun. Furthermore, because the flow of developer on the surface Wa changes, localized unevenness in the progress of development within the surface can be suppressed. The second development control unit 106 may control the rotation holding unit 30 to repeatedly rotate the workpiece W in the forward and reverse directions multiple times during the second development process.

[0098] Instead of or in addition to the first rinse process in step S04 (before the first rinse process), the control device 100 may cause the developing unit U3 to perform a shake-off process to shake off the developer from the workpiece W. In this case, as shown in FIG. 5, the control device 100 may further include a shake-off control unit 118 as a functional module that causes the developing unit U3 to perform the shake-off process. The shake-off process is a process in which the workpiece W is rotated by the rotation holder 30 so that the developer on the surface Wa of the workpiece W is shaken off from the workpiece W while the developer supply unit 40 stops discharging the developer from the nozzle 42. The rotation speed and rotation time in the shake-off process are set to a level that allows the developer to be shaken off from the workpiece W (to discharge the developer on the surface Wa). In one example, the rotation speed and rotation time are set to be approximately the same as those in the second development process in step S03.

[0099] FIG. 18 shows a flowchart for the case where the second developing process is performed intermittently and the shake-off process is performed subsequently to the second developing process. The control device 100 first executes step S71. In step S71, for example, the second developing control unit 106 causes the developer supply unit 40 to start discharging the developer from the nozzle 42 at the second flow rate. This starts the second developing process. Next, the control device 100 executes step S72. In step S72, for example, the second developing control unit 106 waits until a predetermined ON time has elapsed since the start of the second developing process in step S71. This allows the second developing process (the state in which the developer is being discharged at the second flow rate) to continue until the ON time has elapsed.

[0100] Next, the control device 100 executes steps S73 and S74. In step S73, for example, the second development control unit 106 causes the developer supply unit 40 to stop discharging the developer from the nozzle 42. This temporarily suspends the second development process. In step S74, for example, the control device 100 waits until a predetermined OFF time has elapsed since discharging of the developer was stopped in step S73. This allows a state in which the second development process is not being performed (a state in which discharging of the developer is suspended) to continue until the OFF time has elapsed.

[0101] Next, the control device 100 executes step S75. In step S75, for example, the control device 100 determines whether the total execution period of the second development process has exceeded a predetermined central discharge time. If it is determined in step S75 that the total execution period of the second process has not exceeded the central discharge time, the control device 100 repeats steps S71 to S75. The central discharge time used in step S75 is set so that the second development process is executed intermittently multiple times. The ON time and OFF time are set, for example, taking into consideration the balance between the progress of the developer and the conservation of the developer.

[0102] If it is determined in step S75 that the total execution period of the multiple second developing processes exceeds the central discharging time, the control device 100 executes step S76. In step S76, for example, the shake-off control unit 118 waits from the time it is determined in step S75 that the central discharging time has been exceeded until a predetermined shake-off time has elapsed. As a result, during the shake-off time, the workpiece W is rotated by the spin holder 30 so that the developing solution on the surface Wa of the workpiece W is shaken off outside the workpiece W, without the developing solution being discharged from the nozzle 42. Note that the shake-off control unit 118 may control the spin holder 30 to set the rotation speed of the workpiece W to the set value for the shake-off process before executing step S76. This completes a series of processes including the intermittently executed second developing process and shake-off process.

[0103] In the first development process, the control device 100 may cause the development unit U3 to perform the scan-in process without causing the development unit U3 to perform the scan-out process. The control device 100 may cause the development unit U3 to perform the scan-in process and then cause the development unit U3 to perform the scan-out process. The control device 100 may cause the development unit U3 to perform the scan-in process multiple times and the scan-out process multiple times. The number of times the scan-in process is performed and the number of times the scan-out process is performed may differ from each other.

[0104] The control device 100 may omit the first rinse process (or the shake-off process). The control device 100 may omit the first rinse process, for example, depending on the viscosity of the resist film-forming treatment liquid (thickness of the resist film). The control device 100 may determine whether to perform the second development process and the first rinse process depending on type information indicating the type (viscosity) of the resist film-forming treatment liquid or the thickness of the resist film. For example, the control device 100 may determine whether to perform the second development process and the first rinse process in three stages depending on the type information. In one example, if the viscosity or film thickness indicated by the type information is smaller than a first threshold, the control device 100 may not cause the developing unit U3 to perform the second development process and the first rinse process. If the viscosity or film thickness indicated by the type information is greater than the first threshold and smaller than a second threshold, the control device 100 may cause the developing unit U3 to perform the second development process but not the first rinse process. The second threshold value is set to a value greater than the first threshold value. If the viscosity or film thickness indicated by the type information is greater than the second threshold value, the control device 100 may cause the developing unit U3 to perform the second developing process and the first rinsing process. Note that whether or not to perform the second developing process and the first rinsing process may be set in advance by an operator, instead of the control device 100, depending on the type information.

[0105] [Effects of the embodiment] The substrate processing method described above includes: positioning a nozzle 42 having an end face 42a and an outlet 42b opening to the end face 42a so that the end face 42a faces the surface Wa of the workpiece W; rotating the workpiece W while ejecting developer from the outlet 42b at a first flow rate; and performing a first development process in which the nozzle 42 is moved while bringing the end face 42a into contact with the developer on the surface Wa of the workpiece W; and, after the first development process, rotating the workpiece W while bringing the end face 42a into contact with the developer on the surface Wa of the workpiece W at a position facing the center of the surface Wa of the workpiece W; performing a second development process in which the developer is ejected from the outlet 42b at a second flow rate greater than the first flow rate.

[0106] The thickness distribution of a coating that is developed using a developer tends to be thicker in the center of the workpiece W than in the periphery. Therefore, the degree of development in the thickness direction may be insufficient in the center of the workpiece W compared to the periphery. Even if the degree of development is uniform between the center and periphery, the degree of development may be insufficient in the center, where the thickness is thicker. In contrast, in the above-described substrate processing method and coating / developing apparatus 2, after the first development process, the developer is dispensed near the center of the surface Wa of the workpiece W. This allows development to proceed more rapidly in the center than in the periphery in the second development process, thereby reducing the difference in the progress of development between the center and periphery of the workpiece W and eliminating the lack of development in the center. This is therefore effective in uniforming the development process within the surface of the workpiece W. Furthermore, by discharging the developer at a second flow rate greater than the first flow rate in the first development process, development can proceed more quickly and the dissolved products generated during development can be quickly removed from the workpiece W.

[0107] The first developing process may include moving the nozzle 42 from the outer periphery Wb of the workpiece W toward the center of the workpiece W while contacting the end face 42a with the developer on the surface Wa of the workpiece W, while rotating the workpiece W and discharging the developer from the discharge port 42b at a first flow rate. The substrate processing method described above may also include starting the second developing process by increasing the discharge flow rate of the developer from the discharge port 42b from the first flow rate to a second flow rate, with the nozzle 42 positioned opposite the center of the surface Wa of the workpiece W after the first developing process. In this case, the period from the first developing process to the second developing process can be shortened, which is effective in improving the efficiency of the developing processes.

[0108] The first developing process may further include, before moving the nozzle 42, which is discharging the developer at the first flow rate, from the outer periphery Wb of the workpiece W toward the center of the workpiece W, moving the nozzle 42 from the center of the workpiece W toward the outer periphery Wb of the workpiece W while contacting the end surface 42a with the developer on the surface Wa of the workpiece W, while rotating the workpiece W and discharging the developer from the discharge port 42b at the first flow rate. In this case, in the first developing process, the developer is applied to the surface Wa of the workpiece W at least twice. The first application reduces the contact angle of the developer with respect to the surface Wa of the workpiece W, making it easier to spread the developer in the second application.

[0109] In the substrate processing method, the second developing process may be performed intermittently with a period in between in which the discharge flow rate of the developer from the discharge port 42b is smaller than the second flow rate. In this case, the amount of developer used can be reduced, and the dissolved product can be discharged outside the workpiece W during the second developing process.

[0110] The rotation speed of the workpiece W during the second development process may be higher than the rotation speed of the workpiece W during the period when the discharge flow rate of the developer is set lower than the second flow rate during the intermittently executed second development process. In this case, the degree of progress of development can be adjusted while facilitating the removal of dissolved products.

[0111] Rotating the workpiece W in the second development process may include rotating the workpiece W in one direction and rotating the workpiece W in the opposite direction. In this case, the flow of the developer changes at each position on the surface Wa of the workpiece W, making it possible to efficiently remove dissolved products from the surface Wa of the workpiece W where pattern generation by development has begun. In addition, because the flow of the developer on the surface Wa changes, it is possible to suppress localized unevenness in the progress of development within the surface.

[0112] The substrate processing method may further include, after the second development process, rotating the workpiece W while stopping the discharge of the developer from the discharge port 42b so that the developer on the surface Wa of the workpiece W is thrown off to the outside of the workpiece W. In this case, the dissolved product generated on the surface Wa of the workpiece W due to the second development process can be more reliably removed.

[0113] The substrate processing method may further include, after the second developing process, supplying a rinse liquid to the surface Wa of the workpiece W while rotating the workpiece W, and, after supplying the rinse liquid, supplying the developer from the nozzle 42 to the surface Wa of the workpiece W so as to form a puddle of the developer, and performing a third developing process in which the puddle of the developer is held on the surface Wa of the workpiece W. In this case, before the third developing process, the rinse liquid can more reliably remove dissolved products that occur on the surface Wa of the workpiece W as a result of the second developing process.

[0114] Supplying the rinse liquid may include ejecting the rinse liquid from the nozzle 62 toward the surface Wa of the workpiece W at a third flow rate that is equal to or greater than the second flow rate. In this case, dissolved products that are generated on the surface Wa of the workpiece W due to the second development process can be quickly removed.

[0115] The rotation speed of the workpiece W when the rinse liquid is supplied may be equal to or higher than the rotation speed of the workpiece W in the second development process. In this case, the dissolved products generated on the surface Wa of the workpiece W during the second development process can be quickly removed.

[0116] The substrate processing method may further include, after the second development process, performing a plurality of retraction operations to retract the nozzle 42 while the discharge of the developer is stopped. Each of the plurality of retraction operations may include raising the nozzle 42 and stopping the nozzle 42 after the raising. In this case, by performing a plurality of retraction operations, the developer adhering to the end surface 42a of the nozzle 42 can be removed, and the possibility of the developer dropping from the end surface 42a when the nozzle 42 is retracted outside the workpiece W can be reduced.

[0117] When the processing liquid for forming the resist film is a resist liquid with a medium viscosity or higher, the central portion of the film tends to rise more than the peripheral portion in the film thickness distribution. Furthermore, when a resist liquid with a medium viscosity or higher is used, the thickness of the resist film increases (for example, to 5 μm or more). In the second development process, the developer is dispensed while the workpiece W is rotating, so development can proceed not only in the central portion of the workpiece W but also in the peripheral portion. Therefore, even if the film thickness is such that it cannot be sufficiently developed by the third development process alone, the entire film can be developed by also performing the second development process. Therefore, the substrate processing method and coating / developing apparatus 2 described above are even more useful when a resist liquid with a medium viscosity or higher is used. [Explanation of symbols]

[0118] 2...coating and developing device, 30...rotating holding section, 40...developing solution supply section, 42...nozzle, 42a...end surface, 42b...discharge port, 52...nozzle driving section, U3...developing unit, W...workpiece, Wa...surface, Wb...periphery.

Claims

1. performing a first scan-out process using a nozzle having one end surface and an ejection port opening at the end surface; performing a scan-in process using the nozzle after the first scan-out process; performing a second scan-out process using the nozzle after the scan-in process; each of the first scan-out process, the scan-in process, and the second scan-out process includes: disposing the nozzle so that the end face faces a surface of a substrate; and, in a state in which the developing solution is being discharged from the discharge port while the substrate is being rotated, moving the nozzle while bringing the end face into contact with the developing solution on the surface of the substrate; the movement in the first scan-out process is performed from the center of the substrate toward the outer periphery of the substrate, The movement in the scan-in process is performed from the outer periphery of the substrate toward the center of the substrate, the movement in the second scan-out process is performed from the center of the substrate toward the outer periphery of the substrate, After the scan-in process, a rinse process is performed in which a rinse liquid is supplied to the surface of the substrate while rotating the substrate. performing a development process after the rinsing process and the second scan-out process, in which a puddle of the developer is held on the surface of the substrate; Development processing method.

2. The movement of the nozzle in the radial direction of the substrate while the developing solution is being ejected from the start of supplying the developing solution to the surface of the substrate to the completion of supplying the developing solution is the movement in the first scan-out process, the scan-in process, and the second scan-out process, during the execution of the second scan-out process, a deceleration process is performed in which the rotation speed of the substrate is gradually reduced as the ejection port of the nozzle approaches the outer periphery of the substrate; The development processing method according to claim 1 .

3. the edge surface is maintained in contact with the developer on the surface of the substrate during a period from the end of the first scan-out process to the start of the scan-in process; 3. The development processing method according to claim 1 or 2.

4. The method further includes performing a pre-wet process of supplying a rinse liquid to the surface of the substrate before the first scan-out process. The development processing method according to any one of claims 1 to 3.

5. the method further includes performing a plurality of retraction operations to retract the nozzles after the second scan-out process while stopping the discharge of the developer, Each of the plurality of retraction operations includes raising the nozzle and stopping the nozzle after raising it. The development processing method according to any one of claims 1 to 4.

6. A computer-readable storage medium storing a program for causing an apparatus to execute the development processing method according to any one of claims 1 to 5.

7. a rotation holder that holds and rotates the substrate; a liquid supply unit including an end face facing the surface of the substrate held by the rotation holder, a nozzle opening at the end face and including a discharge port for discharging a developer, and a drive unit for moving the nozzle along the surface of the substrate; a control unit that controls the rotation holding unit and the liquid supply unit, the control unit sequentially executes a first scan-out process, a scan-in process, and a second scan-out process; The control unit in each of the first scan-out process, the scan-in process, and the second scan-out process, in a state in which the developing solution is being discharged from the discharge port while the substrate is being rotated by the rotation holding unit, the nozzle is moved by the drive unit while the end face is brought into contact with the developing solution on the surface of the substrate; controlling the driving unit so that the movement in the first scan-out process moves from the center of the substrate toward the outer periphery of the substrate; controlling the driving unit so that the movement in the scan-in process moves from the outer periphery of the substrate toward the center of the substrate; controlling the driving unit so that the movement in the second scan-out process moves from the center of the substrate toward the outer periphery of the substrate; the control unit further performs a rinse process after the scan-in process, in which a rinse liquid is supplied to the surface of the substrate while rotating the substrate; the control unit further performs a developing process in which a puddle of the developer is held on the surface of the substrate after the rinsing process and the second scan-out process. Development processing equipment.

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