Photodetector and electronic equipment

Abstract

To increase a read-out speed.SOLUTION: A light detection device according to an embodiment includes: a first electrode; a second electrode; a photoelectric conversion film provided between the first electrode and the second electrode; a semiconductor layer provided between the photoelectric conversion film and the second electrode; a third electrode provided between the photoelectric conversion film and the second electrode; and a fourth electrode provided between the photoelectric conversion film and the third electrode. The second electrode is electrically connected to the semiconductor layer, and the third electrode and the fourth electrode are electrically insulated from the semiconductor layer.SELECTED DRAWING: Figure 21

Description

[Technical Field]

[0001] The present disclosure relates to a photodetector and an electronic device. [Background technology]

[0002] In recent years, stacked image sensors have been proposed in which multiple photoelectric conversion elements are stacked in the thickness direction of a semiconductor substrate. For example, Patent Document 1 proposes a stacked solid-state imaging device as a method of solving false colors, in which photoelectric conversion regions that photoelectrically convert light of green, blue, and red wavelengths are stacked in the vertical direction of the same pixel, and the green photoelectric conversion region is composed of an organic photoelectric conversion film. Furthermore, Patent Document 2 proposes a structure in which charges generated by photoelectric conversion and accumulated above a storage electrode are transferred vertically to a collection electrode installed below the storage electrode. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Publication No. 2017-157816 [Patent Document 2] Japanese Patent Application Laid-Open No. 2016-63156 Summary of the Invention [Problem to be solved by the invention]

[0004] However, in conventional stacked solid-state imaging devices, the charge stored in the semiconductor layer above the storage electrode first moves laterally along the top surface of the storage electrode before flowing into the readout electrode located below the storage electrode, which means that it takes time to transfer the charge from the storage electrode to the readout electrode, making it difficult to increase the readout speed of pixel signals from each pixel.

[0005] Therefore, the present disclosure proposes a photodetector and electronic equipment that can increase the readout speed. [Means for solving the problem]

[0006] In order to solve the above problems, one embodiment of a photodetector according to the present disclosure comprises a first electrode, a second electrode, a photoelectric conversion film provided between the first electrode and the second electrode, a semiconductor layer provided between the photoelectric conversion film and the second electrode, a third electrode provided between the photoelectric conversion film and the second electrode, and a fourth electrode provided between the photoelectric conversion film and the third electrode, wherein the second electrode is electrically connected to the semiconductor layer, and the third electrode and the fourth electrode are electrically insulated from the semiconductor layer. [Brief explanation of the drawings]

[0007] [Figure 1] 1 is a block diagram showing a schematic configuration example of an electronic device equipped with a solid-state imaging device according to a first embodiment. [Figure 2] 1 is a block diagram showing a schematic configuration example of a solid-state imaging device according to a first embodiment. [Figure 3] 2 is a diagram illustrating an example of a stacked structure of the solid-state imaging device according to the first embodiment. FIG. [Figure 4] 3 is a circuit diagram showing an example of a schematic configuration of a B pixel according to the first embodiment. FIG. [Figure 5] FIG. 2 is a circuit diagram illustrating an example of a schematic configuration of an R pixel according to the first embodiment. [Figure 6] 2 is a circuit diagram showing an example of the schematic configuration of a G pixel according to the first embodiment. FIG. [Figure 7] 3 is a block diagram showing a more detailed configuration example of the pixel array unit shown in FIG. 2. FIG. [Figure 8] FIG. 8 is an enlarged view of a region R in FIG. [Figure 9] 2 is a cross-sectional view showing an example of the cross-sectional structure of a unit pixel in the solid-state imaging device according to the first embodiment. FIG. [Figure 10] FIG. 4 is a diagram showing a band gap formed between a common electrode and a readout electrode during charge accumulation according to the first embodiment. [Figure 11]FIG. 4 is a diagram showing a band gap formed between a common electrode and a readout electrode when charges are accumulated during charge readout according to the first embodiment. [Figure 12] 2 is a plan view showing an example of a planar layout of a unit pixel according to the first embodiment. FIG. [Figure 13] 1 is a plan view showing an example of a planar layout of a storage electrode according to a first embodiment (first example). FIG. [Figure 14] FIG. 4 is a plan view showing an example of a planar layout of storage electrodes according to the first embodiment (second example). [Figure 15] FIG. 10 is a plan view showing an example of a planar layout of the storage electrode according to the first embodiment (third example). [Figure 16] FIG. 10 is a plan view showing an example of a planar layout of storage electrodes according to the first embodiment (fourth example). [Figure 17] FIG. 10 is a plan view showing an example of a planar layout of storage electrodes according to the first embodiment (fifth example). [Figure 18] FIG. 3 is a cross-sectional view showing a schematic configuration example of an organic photoelectric conversion element and its peripheral portion according to a second embodiment. [Figure 19] FIG. 10 is a cross-sectional view showing a schematic configuration example of an organic photoelectric conversion element and its peripheral portion according to a modified example of the second embodiment. [Figure 20] FIG. 10 is a cross-sectional view showing a schematic configuration example of an organic photoelectric conversion element and its peripheral portion according to another modified example of the second embodiment. [Figure 21] FIG. 10 is a cross-sectional view showing a schematic configuration example of an organic photoelectric conversion element and its peripheral portion according to a third embodiment. [Figure 22] FIG. 11 is a plan view showing an example of a planar layout of a shield electrode according to a third embodiment. [Figure 23] FIG. 10 is a plan view of a shield electrode and a storage electrode according to a second embodiment, viewed from the direction of incidence of light. [Figure 24] FIG. 10 is a cross-sectional view showing a schematic configuration example of an organic photoelectric conversion element and its peripheral portion according to a modified example of the third embodiment. [Figure 25] FIG. 10 is a cross-sectional view showing a schematic configuration example of an organic photoelectric conversion element and its peripheral portion according to a fourth embodiment. [Figure 26] FIG. 10 is a plan view showing an example of a planar layout of a read electrode according to a fourth embodiment. [Figure 27] FIG. 10 is a cross-sectional view showing a schematic configuration example of an organic photoelectric conversion element and its peripheral portion according to a fifth embodiment. [Figure 28] FIG. 13 is a cross-sectional view showing a schematic configuration example of an organic photoelectric conversion element and its peripheral portion according to a first modified example of the fifth embodiment. [Figure 29] FIG. 13 is a cross-sectional view showing a schematic configuration example of an organic photoelectric conversion element and its peripheral portion according to a second modified example of the fifth embodiment. [Figure 30] FIG. 13 is a cross-sectional view showing a schematic configuration example of an organic photoelectric conversion element and its peripheral portion according to a third modified example of the fifth embodiment. [Figure 31] FIG. 10 is a cross-sectional view showing a schematic configuration example of an organic photoelectric conversion element and its peripheral portion according to a sixth embodiment. [Figure 32] FIG. 13 is a cross-sectional view showing a schematic configuration example of an organic photoelectric conversion element and its peripheral portion according to a modified example of the sixth embodiment. [Figure 33] FIG. 13 is a cross-sectional view showing a schematic configuration example of an organic photoelectric conversion element and its peripheral portion according to another modified example of the sixth embodiment. [Figure 34] FIG. 13 is a cross-sectional view showing a schematic configuration example of an organic photoelectric conversion element and its peripheral portion according to a seventh embodiment. [Figure 35] FIG. 13 is a plan view showing an example of the planar layout of storage electrodes according to the seventh embodiment. [Figure 36] FIG. 13 is a plan view showing another example of the planar layout of the storage electrodes according to the seventh embodiment. [Figure 37] FIG. 13 is a cross-sectional view showing a schematic configuration example of an organic photoelectric conversion element and its peripheral portion according to an eighth embodiment. [Figure 38] FIG. 13 is a cross-sectional view showing a schematic configuration example of an organic photoelectric conversion element and its peripheral portion according to a ninth embodiment. [Figure 39] FIG. 20 is a cross-sectional view showing a schematic configuration example of an organic photoelectric conversion element and its peripheral portion according to a tenth embodiment. [Figure 40]FIG. 20 is a cross-sectional view showing a schematic configuration example of an organic photoelectric conversion element and its peripheral portion according to an eleventh embodiment. [Figure 41] FIG. 22 is a cross-sectional view showing a schematic configuration example of an organic photoelectric conversion element and its peripheral portion according to a twelfth embodiment. [Figure 42] 23A to 23C are process cross-sectional views (part 1) illustrating a method for manufacturing a solid-state imaging device according to a thirteenth embodiment. [Figure 43] 23A to 23C are process cross-sectional views for explaining the method for manufacturing the solid-state imaging device according to the thirteenth embodiment (part 2). [Figure 44] 23A to 23C are process cross-sectional views for explaining a method for manufacturing a solid-state imaging device according to a thirteenth embodiment (part 3). [Figure 45] 23A to 23C are process cross-sectional views for explaining a method for manufacturing a solid-state imaging device according to a thirteenth embodiment (part 4). [Figure 46] 13A to 13C are process cross-sectional views for explaining a method for manufacturing a solid-state imaging device according to a thirteenth embodiment (part 5). [Figure 47] 23A to 23C are process cross-sectional views for explaining a method for manufacturing a solid-state imaging device according to a thirteenth embodiment (part 6). [Figure 48] 23A to 23C are process cross-sectional views for explaining a method for manufacturing a solid-state imaging device according to a thirteenth embodiment (part 7). [Figure 49] 23A to 23C are process cross-sectional views (part 1) illustrating a method for manufacturing a solid-state imaging device according to a fourteenth embodiment. [Figure 50] 23A to 23C are process cross-sectional views for explaining the method for manufacturing the solid-state imaging device according to the fourteenth embodiment (part 2). [Figure 51] 23A to 23C are process cross-sectional views for explaining a method for manufacturing a solid-state imaging device according to a fourteenth embodiment (part 3). [Figure 52] 23A to 23C are process cross-sectional views for explaining a method for manufacturing a solid-state imaging device according to a fourteenth embodiment (part 4). [Figure 53] 23A to 23C are process cross-sectional views for explaining a method for manufacturing a solid-state imaging device according to a fourteenth embodiment (part 5). [Figure 54]FIG. 22 is a cross-sectional view showing a schematic configuration example of an organic photoelectric conversion element and its peripheral portion according to a fifteenth embodiment. [Figure 55] FIG. 20 is a cross-sectional view showing a schematic configuration example of an organic photoelectric conversion element and its peripheral portion according to a sixteenth embodiment. [Figure 56] FIG. 20 is a cross-sectional view showing another schematic configuration example of the organic photoelectric conversion element and its peripheral portion according to the sixteenth embodiment. [Figure 57] FIG. 22 is a cross-sectional view showing a schematic configuration example of an organic photoelectric conversion element and its peripheral portion according to a modified example of the sixteenth embodiment. [Figure 58] FIG. 20 is a cross-sectional view showing a schematic configuration example of an organic photoelectric conversion element and its peripheral portion according to a seventeenth embodiment. [Figure 59] FIG. 20 is a cross-sectional view showing a schematic configuration example of an organic photoelectric conversion element and its peripheral portion according to an eighteenth embodiment. [Figure 60] FIG. 23 is a cross-sectional view showing a schematic configuration example of an organic photoelectric conversion element and its peripheral portion according to a modified example of the eighteenth embodiment. [Figure 61] FIG. 20 is a cross-sectional view showing a schematic configuration example of an organic photoelectric conversion element and its peripheral portion according to a nineteenth embodiment. [Figure 62] FIG. 20 is a cross-sectional view showing a schematic configuration example of an organic photoelectric conversion element and its peripheral portion according to a twentieth embodiment. [Figure 63] FIG. 23 is a plan view showing an example of the planar layout of read electrodes according to the twentieth embodiment. [Figure 64] FIG. 22 is a cross-sectional view showing a schematic configuration example of an organic photoelectric conversion element and its peripheral portion according to Modification 1 of the twentieth embodiment. [Figure 65] FIG. 22 is a cross-sectional view showing a schematic configuration example of an organic photoelectric conversion element and its peripheral portion according to Modification 2 of the twentieth embodiment. [Figure 66] 1 is a block diagram showing an example of a schematic configuration of a vehicle control system; [Figure 67] FIG. 2 is an explanatory diagram showing an example of the installation positions of an outside-vehicle information detection unit and an imaging unit. [Figure 68] 1 is a block diagram showing an example of a schematic configuration of a vehicle control system; [Figure 69] FIG. 2 is an explanatory diagram showing an example of the installation positions of an outside-vehicle information detection unit and an imaging unit. DETAILED DESCRIPTION OF THE INVENTION

[0008] Hereinafter, an embodiment of the present disclosure will be described in detail with reference to the drawings. In the following embodiments, the same components are designated by the same reference numerals, and redundant description will be omitted.

[0009] The present disclosure will be described in the following order. 1. First embodiment 1.1 Example of electronic device configuration 1.2 Example of a solid-state imaging device configuration 1.3 Example of stacked structure of solid-state imaging device 1.4 Pixel configuration example 1.4.1 B and R pixels 1.4.2 G pixel 1.5 Example of unit pixel connection 1.6 Example of cross-sectional structure of a unit pixel 1.7 Function of the storage electrode 1.8 Example of unit pixel planar layout 1.9 Storage electrode shape 1.10 Photoelectric conversion film 1.11 Actions and Effects 2. Second embodiment 3. Third embodiment 4. Fourth Embodiment 5. Fifth Embodiment 5.1 First variant 5.2 Second variant 5.3 Third variant 6. Sixth Embodiment 7. Seventh Embodiment 8. Eighth Embodiment 9. Ninth embodiment 10. Tenth embodiment 11. Eleventh embodiment 12. Twelfth embodiment 13. Thirteenth embodiment 13.1 Manufacturing process details for each component 14. Fourteenth embodiment 15. Fifteenth embodiment 16. Sixteenth embodiment 16.1 Variations 17. Seventeenth embodiment 18. Eighteenth embodiment 19. 19th embodiment 20. Twentieth embodiment 20.1 Variation 1 20.2 Variation 2 21. Application Example 1 22. Application Example 2

[0010] 1. First embodiment First, a first embodiment will be described in detail with reference to the drawings. This embodiment will exemplify a stacked solid-state imaging device having a structure in which photoelectric conversion regions that photoelectrically convert light of green (G), blue (B), and red (R) wavelengths are stacked in the vertical direction of the same pixel. This embodiment will also exemplify a case in which the photoelectric conversion region that photoelectrically converts light of the green wavelength among green, blue, and red is made of an organic film.

[0011] 1.1 Example of electronic device configuration 1 is a block diagram showing a schematic configuration example of an electronic device equipped with a solid-state imaging device according to Embodiment 1. As shown in Fig. 1, the electronic device 3000 includes, for example, an imaging lens 3020, a solid-state imaging device 100, a storage unit 3030, and a processor 3040.

[0012] The imaging lens 3020 is an example of an optical system that collects incident light and forms an image on the light-receiving surface of the solid-state imaging device 100. The light-receiving surface may be a surface on which photoelectric conversion elements in the solid-state imaging device 100 are arranged. The solid-state imaging device 100 photoelectrically converts the incident light to generate image data. The solid-state imaging device 100 also performs predetermined signal processing, such as noise removal and white balance adjustment, on the generated image data.

[0013] The storage unit 3030 is configured with, for example, a flash memory, a dynamic random access memory (DRAM), a static random access memory (SRAM), or the like, and records image data input from the solid-state imaging device 100, and the like.

[0014] The processor 3040 is configured using, for example, a CPU (Central Processing Unit) etc., and may include an application processor that executes an operating system, various application software etc., a GPU (Graphics Processing Unit), a baseband processor etc. The processor 3040 performs various processes as necessary on image data input from the solid-state imaging device 100, image data read from the storage unit 3030 etc., displays the data to the user, and transmits the data to the outside via a predetermined network.

[0015] 1.2 Example of a solid-state imaging device configuration 2 is a block diagram showing a schematic configuration example of a CMOS (Complementary Metal-Oxide-Semiconductor) solid-state imaging device (hereinafter simply referred to as an image sensor) according to the first embodiment. Here, the CMOS image sensor is an image sensor that is fabricated by applying or partially using a CMOS process.

[0016] 2, the image sensor 100 includes, for example, a pixel array unit 3101, a vertical drive circuit 3102, a column processing circuit 3103, a horizontal drive circuit 3104, a system control unit 3105, a signal processing unit 3108, and a data storage unit 3109. In the following description, the vertical drive circuit 3102, the column processing circuit 3103, the horizontal drive circuit 3104, the system control unit 3105, the signal processing unit 3108, and the data storage unit 3109 are also referred to as peripheral circuits.

[0017] The pixel array section 3101 has a configuration in which unit pixels 3110, each having a photoelectric conversion element that generates and accumulates an electric charge according to the amount of received light, are arranged in row and column directions, i.e., in a two-dimensional lattice pattern (hereinafter referred to as a matrix pattern) in a matrix. Here, the row direction refers to the direction in which pixels in a pixel row are arranged (the horizontal direction in the drawing), and the column direction refers to the direction in which pixels in a pixel column are arranged (the vertical direction in the drawing).

[0018] The image sensor 100 according to this embodiment is a stacked type having a structure in which photoelectric conversion regions that photoelectrically convert light of respective wavelengths of green (G), blue (B), and red (R) are stacked in the vertical direction of the same pixel, so that one unit pixel 3110 includes a pixel 3110G that receives light of a green (G) wavelength and generates a pixel signal, a pixel 3110B that receives light of a blue (B) wavelength and generates a pixel signal, and a pixel 3110R that receives light of a red (R) wavelength and generates a pixel signal. The specific circuit configuration and pixel structure of the unit pixel 3110 will be described in detail in the embodiments described later.

[0019] In the pixel array unit 3101, pixel drive lines LD are wired in the row direction for each pixel row, and vertical signal lines VSL are wired in the column direction for each pixel column in the matrix-like pixel arrangement. The pixel drive lines LD transmit drive signals for driving the pixels when reading out signals. Although FIG. 2 shows one pixel drive line LD per pixel, the number is not limited to one. One end of the pixel drive line LD is connected to an output terminal of the vertical drive circuit 3102 corresponding to each row.

[0020] The vertical drive circuit 3102 is configured with a shift register, an address decoder, etc., and drives each pixel of the pixel array section 3101 simultaneously for all pixels or in row units, etc. In other words, the vertical drive circuit 3102, together with a system control section 3105 that controls the vertical drive circuit 3102, constitutes a drive section that controls the operation of each pixel of the pixel array section 3101. Although the specific configuration of this vertical drive circuit 3102 is not shown in the figure, it generally has two scan systems: a readout scan system and a sweep scan system.

[0021] The readout scanning system sequentially selects and scans each of the unit pixels 3110 of the pixel array section 3101 row by row to read out a signal from each of the unit pixels 3110. The signal read out from each of the unit pixels 3110 is an analog signal. The sweep scanning system performs sweep scanning on a readout row that is to be read out by the readout scanning system, prior to the readout scanning by the exposure time.

[0022] By sweeping scan by this sweeping scan system, unnecessary charges are swept out from the photoelectric conversion elements of each pixel of the unit pixels 3110 in the readout row, thereby resetting the photoelectric conversion elements. Then, by sweeping out (resetting) the unnecessary charges with this sweeping scan system, a so-called electronic shutter operation is performed. Here, the electronic shutter operation refers to the operation of discarding the charges in the photoelectric conversion elements and starting a new exposure (starting the accumulation of charges).

[0023] The signal read by the readout scanning system corresponds to the amount of light received since the immediately preceding readout operation or electronic shutter operation. The period from the readout timing of the immediately preceding readout operation or the sweep timing of the electronic shutter operation to the readout timing of the current readout operation is the charge accumulation period (also called the exposure period) in each unit pixel 3110.

[0024] Signals output from each pixel of each unit pixel 3110 in a pixel row selected and scanned by the vertical drive circuit 3102 are input to the column processing circuit 3103 through each vertical signal line VSL for each pixel column. The column processing circuit 3103 performs predetermined signal processing on signals output from each pixel in the selected row through the vertical signal line VSL for each pixel column in the pixel array section 3101, and temporarily holds the pixel signals after signal processing.

[0025] Specifically, the column processing circuit 3103 performs at least noise removal processing, such as CDS (Correlated Double Sampling) processing and DDS (Double Data Sampling) processing, as signal processing. For example, CDS processing removes pixel-specific fixed pattern noise such as reset noise and threshold variations of the amplification transistors in the pixels. The column processing circuit 3103 also has, for example, an AD (analog-to-digital) conversion function, and converts analog pixel signals read out from the photoelectric conversion elements into digital signals and outputs them.

[0026] The horizontal drive circuit 3104 is configured with a shift register, an address decoder, etc., and sequentially selects readout circuits (hereinafter referred to as pixel circuits) corresponding to pixel columns of the column processing circuit 3103. By selective scanning by this horizontal drive circuit 3104, pixel signals processed for each pixel circuit in the column processing circuit 3103 are output sequentially.

[0027] The system control unit 3105 is composed of a timing generator that generates various timing signals, and controls the driving of the vertical driving circuit 3102, column processing circuit 3103, and horizontal driving circuit 3104 based on the various timings generated by the timing generator.

[0028] The signal processing unit 3108 has at least an arithmetic processing function, and performs various signal processing such as arithmetic processing on pixel signals output from the column processing circuit 3103. The data storage unit 3109 temporarily stores data necessary for signal processing in the signal processing unit 3108.

[0029] The image data output from the signal processing unit 3108 may be subjected to predetermined processing, for example, in a processor 3040 in an electronic device 3000 equipped with the image sensor 100, or may be transmitted to the outside via a predetermined network.

[0030] 1.3 Example of stacked structure of solid-state imaging device Fig. 3 is a diagram showing an example of a stack structure of the image sensor according to the first embodiment. As shown in Fig. 3, the image sensor 100 has a stack structure in which a light receiving chip 3121 and a circuit chip 3122 are stacked one above the other. The light receiving chip 3121 is, for example, a semiconductor chip including a pixel array section 3101 in which a plurality of unit pixels 3110 are arranged in a matrix, and the circuit chip 3122 may be, for example, a semiconductor chip including the peripheral circuits shown in Fig. 2.

[0031] The light receiving chip 3121 and the circuit chip 3122 can be bonded together by, for example, flattening their respective bonding surfaces and bonding them together by electronic force, which is known as direct bonding. However, the present invention is not limited to this, and other bonding methods such as Cu-Cu bonding, which is bonding copper (Cu) electrode pads formed on each bonding surface, or bump bonding can also be used.

[0032] The photosensor chip 3121 and the circuit chip 3122 are electrically connected via a connection portion such as a TSV (Through-Silicon Via) that penetrates the semiconductor substrate. For connection using TSVs, for example, a so-called twin TSV method can be used in which two TSVs, one provided in the photosensor chip 3121 and one provided from the photosensor chip 3121 to the circuit chip 3122, are connected on the outer surface of the chips, or a so-called shared TSV method can be used in which the two are connected by a TSV that penetrates from the photosensor chip 3121 to the circuit chip 3122.

[0033] However, when Cu-Cu bonding or bump bonding is used to bond the light receiving chip 3121 and the circuit chip 3122, they are electrically connected via the Cu-Cu bonding portion or the bump bonding portion.

[0034] 1.4 Pixel configuration example 4 to 6 are circuit diagrams showing examples of the schematic configuration of pixels according to the first embodiment. Fig. 4 shows a circuit diagram of a pixel 3110B that photoelectrically converts light having a blue (B) wavelength, for example, Fig. 5 shows a circuit diagram of a pixel 3110R that photoelectrically converts light having a red (R) wavelength, for example, Fig. 6 shows a circuit diagram of a pixel 3110G that photoelectrically converts light having a green (G) wavelength, for example.

[0035] First, as shown in FIG. 4, the pixel 3110B includes a photodiode PD1, a transfer transistor TRG1, a reset transistor RST1, an amplifier transistor AMP1, a selection transistor SEL1, and a floating diffusion layer FD1.

[0036] Similarly, as shown in FIG. 5, the pixel 3110R includes a photodiode PD2, a transfer transistor TRG2, a reset transistor RST2, an amplifier transistor AMP2, a selection transistor SEL2, and a floating diffusion layer FD2.

[0037] On the other hand, pixel 3110G, whose photoelectric conversion element is made of an organic film, includes an organic photoelectric conversion element PD3, a reset transistor RST3, an amplification transistor AMP3, a selection transistor SEL3, and a floating diffusion layer FD3, as shown in FIG.

[0038] For simplicity, the following description focuses on the pixel 3110B and the pixel 3110G. The configuration and operation of the pixel 3110R may be similar to those of the pixel 3110B.

[0039] 1.4.1 B and R pixels 4, in the pixel 3110B, the gate of the selection transistor SEL1 is connected to a selection transistor drive line included in the pixel drive line LD, the gate of the reset transistor RST1 is connected to a reset transistor drive line included in the pixel drive line LD, and the gate of the transfer transistor TRG1 is connected to a transfer transistor drive line included in the pixel drive line LD. Also, the drain of the amplification transistor AMP1 is connected to a vertical signal line VSL1, one end of which is connected to the column processing circuit 3103, via the selection transistor SEL1.

[0040] In the following description, the reset transistor RST1, the amplification transistor AMP1, and the selection transistor SEL1 are collectively referred to as a pixel circuit, which may include a floating diffusion region FD1 and / or a transfer transistor TRG1.

[0041] The photodiode PD1 photoelectrically converts incident light. The transfer transistor TRG1 transfers the charge generated in the photodiode PD1. The floating diffusion layer FD1 accumulates the charge transferred by the transfer transistor TRG1. The amplification transistor AMP1 generates a pixel signal on the vertical signal line VSL1 with a voltage value corresponding to the charge accumulated in the floating diffusion region FD1. The reset transistor RST1 releases the charge accumulated in the floating diffusion region FD1. The selection transistor SEL1 selects the pixel 3110B to be read out.

[0042] The anode of the photodiode PD1 is grounded, and the cathode is connected to the source of the transfer transistor TRG1. The drain of the transfer transistor TRG1 is connected to the source of the reset transistor RST1 and the gate of the amplification transistor AMP1, and the node at which these are connected forms a floating diffusion region FD1. The drain of the reset transistor RST1 is connected to a vertical reset input line (not shown).

[0043] The source of the amplifier transistor AMP1 is connected to a vertical current supply line (not shown). The drain of the amplifier transistor AMP1 is connected to the source of the select transistor SEL1, and the drain of the select transistor SEL1 is connected to a vertical signal line VSL1.

[0044] The floating diffusion region FD1 converts the accumulated charge into a voltage having a value corresponding to the amount of charge. The floating diffusion region FD1 may be, for example, a capacitance to ground. However, the present invention is not limited to this. The floating diffusion region FD1 may be a capacitance added by intentionally connecting a capacitor or the like to a node connecting the drain of the transfer transistor TRG1, the source of the reset transistor RST1, and the gate of the amplification transistor AMP1.

[0045] 1.4.2 G pixel On the other hand, as shown in FIG. 6, the pixel 3110G has the same configuration as the pixel 3110B described above, except that the photodiode PD1 and the transfer transistor TRG1 are replaced with an organic photoelectric conversion element PD3.

[0046] The common electrode 112 of the organic photoelectric conversion element PD3 is connected to a predetermined potential VOU such as a ground potential, while the storage electrode 115 is connected to a voltage application circuit included in the vertical drive circuit 3102 via a pixel drive line LD.

[0047] The other configurations may be similar to those of the pixel 3110B described above.

[0048] 1.5 Example of unit pixel connection Fig. 7 is a block diagram showing a more detailed configuration example of the pixel array unit shown in Fig. 2. Fig. 8 is an enlarged view of a region R in Fig. 7.

[0049] 2 may be divided into two column processing circuits 3103A and 3103B. In this case, one column processing circuit 3103A may be arranged, for example, above the pixel array unit 3101 in the column direction (vertical direction in the drawing), and the other column processing circuit 3103B may be arranged below the pixel array unit 3101 in the column direction. This makes it possible to reduce the mounting area of ​​each of the column processing circuits 3103A and 3103B.

[0050] The pixels connected to each column processing circuit 3103A and 3103B may be divided into pixels 3110R, 3110G and 3110B, or into columns or rows in the pixel array section 3101, or into regions of the pixel array section 3101 (for example, the upper and lower halves in the intersecting direction).

[0051] 8, one unit pixel 3110 includes three pixels 3110B, 3110R, and 3110G having the circuit configuration described above. A pixel drive line LD, which is wired in the row direction (left-right direction in the drawing), is connected to each of the pixels 3110B, 3110R, and 3110G. The vertical signal lines VSL1 to VSL3 are wired in the column direction (up-down direction in the drawing), i.e., perpendicular to the direction in which the pixel drive lines LD extend. The column processing circuit 3103 is arranged in the direction in which the vertical signal lines VSL1 to VSL3 extend (see FIG. 2 or FIG. 7).

[0052] 1.6 Example of cross-sectional structure of a unit pixel Fig. 9 is a cross-sectional view showing an example of the cross-sectional structure of a unit pixel in the image sensor according to the first embodiment. Note that Fig. 4 shows an example of the cross-sectional structure along the substrate thickness direction of the semiconductor substrate 101 constituting the photosensor chip 3121, that is, the semiconductor substrate in which the unit pixel 3110 is fabricated.

[0053] 9, the unit pixel 3110 includes a semiconductor substrate 101, an insulating layer 111 provided on the back surface (top surface in the drawing) opposite to the element formation surface (front surface) of the semiconductor substrate 101, and a wiring layer 121 provided on the front surface of the semiconductor substrate 101. The back surface of the semiconductor substrate 101 corresponds to the light incident surface.

[0054] Of the unit pixels 3110, the pixel 3110G includes an organic photoelectric conversion element PD3 formed by stacking a common electrode (first electrode) 112, a photoelectric conversion film 113, a semiconductor layer 114, and a readout electrode (second electrode) 117. The organic photoelectric conversion element PD3 is provided on, for example, an insulating layer 111. Furthermore, at least a portion of the photoelectric conversion film 113 and at least a portion of the semiconductor layer 114 are disposed between the common electrode 112 and the readout electrode 117, which are disposed such that their main planes (surfaces parallel to the rear or front surface of the semiconductor substrate 101) face each other. Furthermore, at least a portion of the semiconductor layer 114 is in contact with the readout electrode 117.

[0055] The organic photoelectric conversion element PD3 further includes a storage electrode (third electrode) 115 disposed in parallel to the rear surface of the semiconductor substrate 101 in the semiconductor layer 114 between the photoelectric conversion film 113 and the readout electrode 117. The storage electrode 115 is covered with an insulating film 116, and is thereby electrically isolated from the semiconductor layer 114.

[0056] On the other hand, the photodiode PD1 of the pixel 3110B and the photodiode PD2 of the pixel 3110R are provided on a semiconductor substrate 101. Specifically, the semiconductor substrate 101 includes an N-type semiconductor region 103 and an N-type semiconductor region 105 arranged in this order from the back surface side of the semiconductor substrate 101. These N-type semiconductor regions 103 and 105 are arranged below the organic photoelectric conversion element PD3 in the substrate thickness direction of the semiconductor substrate 101, for example.

[0057] The N-type semiconductor region 105 is surrounded by, for example, a P-type semiconductor region 104 provided on the semiconductor substrate 101. The N-type semiconductor region 103 is sandwiched between, for example, a P-type semiconductor region 102 provided on the back surface of the semiconductor substrate 101 and the upper part of the P-type semiconductor region 104 that surrounds the N-type semiconductor region 105.

[0058] The N-type semiconductor region 103, the P-type semiconductor region 102, and the upper part of the P-type semiconductor region 104 constitute, for example, the photodiode PD1 of the pixel 3110B. On the other hand, the N-type semiconductor region 105 and the P-type semiconductor region 104 constitute the photodiode PD2 of the pixel 3110R.

[0059] The organic photoelectric conversion element PD3 provided in the insulating layer 111 is connected to the floating diffusion region FD3 and the like (see FIG. 6 ) provided on the surface side of the semiconductor substrate 101 via, for example, a wiring 118 provided in the insulating layer 111, a through electrode 119 penetrating the semiconductor substrate 101, and a wiring 122 in a wiring layer 121 provided on the surface side of the semiconductor substrate 101. Note that the reset transistor RST3, the amplification transistor AMP3, and the selection transistor SEL3 that constitute the readout circuit of the pixel 3110G may be formed on the surface side of the semiconductor substrate 101.

[0060] On the other hand, the photodiode PD1 provided on the semiconductor substrate 101 is connected to the floating diffusion region FD1 etc. (see FIG. 4) via a transfer transistor TRG1, which is a vertical transistor provided on the semiconductor substrate 101. Also, the photodiode PD2 is connected to the floating diffusion region FD2 etc. (see FIG. 5) via a transfer transistor TRG2 provided on the surface of the semiconductor substrate 101. Note that the reset transistor RST1, the amplification transistor AMP1, and the selection transistor SEL1 that constitute the readout circuit of the pixel 3110B may be formed on the surface side of the semiconductor substrate 101. Similarly, the reset transistor RST2, the amplification transistor AMP2, and the selection transistor SEL2 that constitute the readout circuit of the pixel 3110R may be formed on the surface side of the semiconductor substrate 101.

[0061] The surface of the semiconductor substrate 101 may be covered with, for example, an insulating film 106, part of which is used as a gate insulating film for each transistor. In addition, the back surface of the semiconductor substrate 101 and the inner surface of a trench for a through electrode 119 formed in the semiconductor substrate may be covered with an anti-reflection film 110.

[0062] The semiconductor layer 114 may cover the upper surface of the insulating layer 111, and the photoelectric conversion film 113 and the common electrode 112 may be solid films that cover the semiconductor layer 114 and the photoelectric conversion film 113, respectively.

[0063] A protective film 131 and a planarization film 132 may be provided on the common electrode 112. Furthermore, an on-chip lens 133 for each unit pixel 3110 may be provided on the planarization film 132 in an area corresponding to the organic photoelectric conversion element PD3 and the photodiodes PD1 and PD2 in the substrate thickness direction.

[0064] Thus, in the first embodiment, the organic photoelectric conversion element PD3 has a structure in which a photoelectric conversion film 113 and a storage electrode 115 surrounded by a semiconductor layer 114 and an insulating film 116 are provided between the common electrode 112 and the readout electrode 117.

[0065] 9, not only the upper side of the storage electrode 115 but also the sidewall and lower sides function as an accumulation region for accumulating charges generated in the photoelectric conversion film 113. Therefore, of the accumulated charges 120 accumulated in the organic photoelectric conversion element PD3, the proportion of the accumulated charges 120 accumulated in the upper part of the storage electrode 115, which is located a long distance from the readout electrode 117, decreases. As a result, in the transfer path of the accumulated charges 120 from the accumulation region to the readout electrode 117, a vertical component forming the shortest distance from the accumulation region on the sidewall or lower side of the storage electrode 115 to the readout electrode 117 becomes dominant. The vertical direction corresponds to the substrate thickness direction of the semiconductor substrate 101.

[0066] 1.7 Function of the storage electrode FIG. 10 is a diagram showing the band gap formed between the common electrode and the readout electrode during charge accumulation in the first embodiment, and FIG. 11 is a diagram showing the band gap formed between the common electrode and the readout electrode during charge accumulation during charge readout in the first embodiment.

[0067] In the first embodiment, an electric field is applied in the vertical direction from the common electrode 112 to the readout electrode 117 both during charge accumulation and charge readout. Therefore, as shown in FIG. 10 , during charge accumulation, a voltage is applied to the storage electrode 115 so as to create a depression at the boundary between the conduction band and the forbidden band in the semiconductor layer 114. This allows the charge generated in the photoelectric conversion film 113 to be stored in the semiconductor layer 114 around the storage electrode 115. Furthermore, during charge readout, as shown in FIG. 11 , a voltage is applied to the storage electrode 115 so as to invert the depression at the boundary between the conduction band and the forbidden band formed during readout and raise it into a convex shape. This allows the accumulated charge 120 trapped around the storage electrode 115 to be discharged and flow to the readout electrode 117.

[0068] In this way, by changing the voltage applied to the storage electrode 115 from the voltage during charge storage (see Figure 10) to the voltage during charge readout (see Figure 11), it is possible to smoothly transfer the stored charge 120 stored in the storage region around the storage electrode 115 to the readout electrode 117.

[0069] For example, when electrons generated by photoelectric conversion are used as a signal, during the accumulation period (see Figure 10), the voltage applied to the common electrode 112 can be -2V (volts), the voltage applied to the readout electrode 117 (i.e., the reset voltage of the floating diffusion region FD3) can be 3V, and the voltage applied to the accumulation electrode 115 can be 1V.

[0070] During the transfer period (see FIG. 11), the voltage applied to the common electrode 112 can be set to −2 V, the voltage applied to the readout electrode 117 (the reset voltage of the floating diffusion region FD3) to 3 V, and the voltage applied to the storage electrode 115 to −1 V. Note that the voltage applied to the common electrode 112 may be dynamically changed, for example to −3 V, to prevent backflow of electrons.

[0071] Such voltage control controls the potential of the photoelectric conversion film 113 and the semiconductor layer 114, allowing electrons generated by photoelectric conversion to be moved from the photoelectric conversion film 113 to the semiconductor layer 114 around the storage electrode 115, where they are stored, and then read out to the readout electrode 117.

[0072] The electrons transferred to the readout electrode 117 change the potential of the floating diffusion region FD3, and are converted into a voltage by the amplification transistor AMP3, and are read out as a pixel signal by the readout circuit (see FIG. 6).

[0073] As described above, in the first embodiment, not only the semiconductor layer 114 on the upper side of the storage electrode 115 but also the semiconductor layer 114 on the sidewall side and lower side can be used as the storage region, which makes it possible to increase the amount of charge that can be stored.

[0074] 1.8 Example of unit pixel planar layout 12 is a plan view showing an example of a planar layout of a unit pixel according to the first embodiment. In FIG. 12, an upper left region R1 shows an example of a layout on the front side of the semiconductor substrate 101, an upper right region R2 shows an example of a layout of the readout electrode 117 in a region corresponding to region R1, and a lower right region R3 shows an example of a layout of the storage electrode 115.

[0075] 12, the unit pixels 3110 have a layout in which the readout circuit of pixel 3110B, the readout circuit of pixel 3110R, and the readout circuit of pixel 3110G are arranged so as to surround the photodiode PD2 on three sides within an area R1 allocated to each unit pixel 3110 on the front surface side of the semiconductor substrate 101. The transistors constituting each readout circuit are arranged, for example, linearly.

[0076] The readout electrode 117 is provided in a region R2 that corresponds in the thickness direction to the region R1 on the surface of the semiconductor substrate 101, and the storage electrode 115 is provided in a region R3 that corresponds in the thickness direction to the region R2. The storage electrode 115 is connected to a voltage application circuit 3102A in the vertical drive circuit 3102, for example, via a pixel drive line LD.

[0077] 1.9 Storage electrode shape 13 to 17 are plan views showing examples of the planar layout of the storage electrodes according to the first embodiment.

[0078] The storage electrode 115 according to the first embodiment may have a lattice structure including a plurality of openings A1 arranged in a matrix, as shown in Fig. 13. The number and size of the openings A1 may be varied in accordance with the characteristics required of the organic photoelectric conversion element PD3 (e.g., transfer, saturation electron amount, pixel size, etc.), as shown in Fig. 14.

[0079] Furthermore, as shown in FIGS. 15 and 16, the shape of the opening A1 is not limited to a rectangle (see FIGS. 13 and 14), but may be, for example, a circle.

[0080] Furthermore, as shown in FIG. 17, the storage electrode 115 is not limited to having one type of opening A1 with the same size, shape, etc., but may have openings A2 with different sizes, shapes, etc.

[0081] 1.10 Photoelectric conversion film In the first embodiment, when an organic semiconductor is used as the material of the photoelectric conversion film 113, the layer structure of the photoelectric conversion film 113 can be as follows: However, in the case of a stacked structure, the stacking order can be changed as appropriate. (1) Single layer structure of p-type organic semiconductor (2) Single-layer structure of n-type organic semiconductor (3-1) p-type organic semiconductor layer / n-type organic semiconductor layer stack structure (3-2) Layered structure of p-type organic semiconductor layer / mixed layer of p-type organic semiconductor and n-type organic semiconductor (bulk heterostructure) / n-type organic semiconductor layer (3-3) Layer structure of p-type organic semiconductor layer / mixed layer of p-type organic semiconductor and n-type organic semiconductor (bulk heterostructure) (3-4) Layer structure of n-type organic semiconductor layer / mixed layer of p-type organic semiconductor and n-type organic semiconductor (bulk heterostructure) (4) Mixed layer of p-type organic semiconductor and p-type organic semiconductor (bulk heterostructure)

[0082] Examples of p-type organic semiconductors include naphthalene derivatives, anthracene derivatives, phenanthrene derivatives, pyrene derivatives, perylene derivatives, tetracene derivatives, pentacene derivatives, quinacridone derivatives, thiophene derivatives, thienothiophene derivatives, benzothiophene derivatives, benzothienobenzothiophene derivatives, triallylamine derivatives, carbazole derivatives, perylene derivatives, picene derivatives, chrysene derivatives, fluoranthene derivatives, phthalocyanine derivatives, subphthalocyanine derivatives, subporphyrazine derivatives, metal complexes having a heterocyclic compound as a ligand, polythiophene derivatives, polybenzothiadiazole derivatives, and polyfluorene derivatives.

[0083] Examples of n-type organic semiconductors include fullerenes and fullerene derivatives (for example, fullerenes such as C60, C70, and C74 (higher fullerenes, endohedral fullerenes, etc.) or fullerene derivatives (for example, fullerene fluorides, PCBM fullerene compounds, fullerene polymers, etc.)), organic semiconductors with larger (deeper) HOMO and LUMO than p-type organic semiconductors, and transparent inorganic metal oxides.

[0084] Specific examples of n-type organic semiconductors include organic molecules, organometallic complexes, and subphthalocyanine derivatives having, as part of their molecular skeletons, heterocyclic compounds containing nitrogen atoms, oxygen atoms, or sulfur atoms, such as pyridine derivatives, pyrazine derivatives, pyrimidine derivatives, triazine derivatives, quinoline derivatives, quinoxaline derivatives, isoquinoline derivatives, acridine derivatives, phenazine derivatives, phenanthroline derivatives, tetrazole derivatives, pyrazole derivatives, imidazole derivatives, thiazole derivatives, oxazole derivatives, imidazole derivatives, benzimidazole derivatives, benzotriazole derivatives, benzoxazole derivatives, carbazole derivatives, benzofuran derivatives, dibenzofuran derivatives, subporphyrazine derivatives, polyphenylenevinylene derivatives, polybenzothiadiazole derivatives, and polyfluorene derivatives.

[0085] Examples of groups contained in the fullerene derivative include halogen atoms; linear, branched, or cyclic alkyl or phenyl groups; groups having linear or condensed aromatic compounds; groups having halides; partial fluoroalkyl groups; perfluoroalkyl groups; silylalkyl groups; silylalkoxy groups; arylsilyl groups; arylsulfanyl groups; alkylsulfanyl groups; arylsulfonyl groups; alkylsulfonyl groups; arylsulfide groups; alkylsulfide groups; amino groups; alkylamino groups; arylamino groups; hydroxy groups; alkoxy groups; acylamino groups; acyloxy groups; carbonyl groups; carboxy groups; carboxamido groups; carboalkoxy groups; acyl groups; sulfonyl groups; cyano groups; nitro groups; groups having chalcogenides; phosphine groups; phosphonic groups; and derivatives thereof.

[0086] The thickness of the photoelectric conversion film 113 made of the organic material as described above is not limited to the following value, but may be, for example, 1×10 -8 m (meters) to 5 x 10 -7 m, preferably 2.5 x 10 -8 m to 3×10 -7 m, more preferably 2.5 x 10 -8m to 2×10 -7 m, more preferably 1×10 -7 m to 1.8×10 -7 Examples of suitable organic semiconductors include p-type and n-type. Organic semiconductors are often classified as p-type and n-type, but p-type means that they easily transport holes, and n-type means that they easily transport electrons, and are not limited to the interpretation that they have holes or electrons as thermally excited majority carriers like inorganic semiconductors.

[0087] Examples of materials that can be used to form the photoelectric conversion film 113 that photoelectrically converts light of a green wavelength include rhodamine-based dyes, melacyanine-based dyes, quinacridone derivatives, and subphthalocyanine-based dyes (subphthalocyanine derivatives).

[0088] Furthermore, examples of materials constituting the photoelectric conversion film 113 that photoelectrically converts blue light include coumaric acid dyes, tris-8-hydroxyquinolialuminum (Alq3), and melacyanine dyes.

[0089] Furthermore, examples of materials that can be used to form the photoelectric conversion film 113 that photoelectrically converts red light include phthalocyanine dyes and subphthalocyanine dyes (subphthalocyanine derivatives).

[0090] Furthermore, as the photoelectric conversion film 113, a panchromatic photosensitive organic photoelectric conversion film that is sensitive to almost all visible light from the ultraviolet region to the red region can also be used.

[0091] On the other hand, examples of inorganic materials constituting the photoelectric conversion film 113 include crystalline silicon, amorphous silicon, microcrystalline silicon, crystalline selenium, amorphous selenium, and chalcopalite compounds such as CIGS (CuInGaSe), CIS (CuInSe), CuInS, CuAlS, CuAlSe, CuGaS, CuGaSe, AgAlS, AgAlSe, AgInS, and AgInSe, as well as III-V group compounds such as GaAs, InP, AlGaAs, InGaP, AlGaInP, and InGaAsP, as well as compound semiconductors such as CdSe, CdS, InSe, InS, BiSe, BiS, ZnSe, ZnS, PbSe, and PbS. In addition, quantum dots made of these materials can also be used in the photoelectric conversion film 113.

[0092] The photoelectric conversion film 113 may also have a laminated structure of a lower semiconductor layer 114 and an upper photoelectric conversion film 113. By providing the semiconductor layer 114 below the photoelectric conversion film 113 in this way, recombination during charge accumulation can be prevented, and the transfer efficiency of the charges accumulated in the photoelectric conversion film 113 to the readout electrode 117 can be increased. In addition, it is also possible to suppress the generation of dark current. Note that the material constituting the photoelectric conversion film 113 in this case may be appropriately selected from the various materials constituting the photoelectric conversion film 113 described above.

[0093] Here, it is preferable that the material constituting the semiconductor layer 114 has a large band gap value (for example, a band gap value of 3.0 eV (electron volts) or more) and a higher mobility than the material constituting the photoelectric conversion film 113. Specific examples include oxide semiconductor materials such as IGZO, transition metal dichalcogenides, silicon carbide, diamond, graphene, carbon nanotubes, and organic semiconductor materials such as condensed polycyclic hydrocarbon compounds and condensed heterocyclic compounds.

[0094] Alternatively, when the accumulated charges 120 are electrons, the material constituting the semiconductor layer 114 can be a material having a larger ionization potential than the material constituting the photoelectric conversion film 113. On the other hand, when the accumulated charges 120 are holes, the material constituting the semiconductor layer 114 can be a material having a smaller electron affinity than the electron affinity of the material constituting the photoelectric conversion film 113.

[0095] The impurity concentration in the material that constitutes the semiconductor layer 114 is 1×10 18 cm -3 It is preferable that the following is satisfied: Furthermore, if it is possible to satisfy the photoelectric conversion performance and mobility performance, the photoelectric conversion film 113 and the semiconductor layer 114 can be made of the same material.

[0096] It is desirable to use a transparent material for each of the common electrode 112, the readout electrode 117, the semiconductor layer 114, and the storage electrode 115. Specifically, a material made of Al-Nd (an alloy of aluminum and neodymium) or ASC (an alloy of aluminum, samarium, and copper) can be used.

[0097] The band gap energy of the transparent conductive material is desirably 2.5 eV or more, and preferably 3.1 eV or more.

[0098] On the other hand, when the common electrode 112, the readout electrode 117, and the storage electrode 115 are transparent electrodes, examples of the transparent conductive material that constitutes them include conductive metal oxides.

[0099] Specifically, indium oxide, indium-tin oxide (including ITO (Indium Tin Oxide), Sn-doped In2O3, crystalline ITO, and amorphous ITO), indium-zinc oxide (IZO (Indium Zinc Oxide)) in which indium is added as a dopant to zinc oxide, Examples of the oxide include indium-gallium oxide (IGO) in which indium is added as a dopant to gallium oxide, indium-gallium-zinc oxide (IGZO (In-GaZnO)) in which indium and gallium are added as dopants to zinc oxide, indium-tin-zinc oxide (ITZO) in which indium and tin are added as dopants to zinc oxide, IFO (F-doped In2O3), tin oxide (SnO), ATO (Sb-doped SnO), FTO (F-doped SnO), zinc oxide (including ZnO doped with other elements), aluminum-zinc oxide (AZO) in which aluminum is added as a dopant to zinc oxide, gallium-zinc oxide (GZO) in which gallium is added as a dopant to zinc oxide, titanium oxide (TiO), niobium-titanium oxide (TNO) in which niobium is added as a dopant to titanium oxide, antimony oxide, spinel-type oxides, and oxides having a YbFe2O4 structure.

[0100] Alternatively, a transparent electrode having a base layer made of gallium oxide, titanium oxide, niobium oxide, nickel oxide, or the like can be used.

[0101] Furthermore, the thickness of the transparent electrode is 2 × 10 -8 m to 2×10 -7 m, preferably 3 x 10 -8 m to 1×10 -7 m can be mentioned.

[0102] 1.11 Actions and Effects As described above, according to this embodiment, the storage electrode 115, the periphery of which is covered with the insulating film 116, is provided in the semiconductor layer 114 on the readout electrode 117. That is, in this embodiment, the semiconductor layer 114 is also provided between the storage electrode 115 and the readout electrode 117.

[0103] This allows the semiconductor layer 114 not only on the upper side of the storage electrode 115 but also on the sidewall and lower sides to be used as the storage region, reducing the proportion of the stored charges 120 that exist on the upper side of the storage electrode 115 and need to be transferred laterally (directions along the back and front surfaces) among the stored charges 120 stored in the semiconductor layer 114. As a result, it becomes possible to increase the dominance of the vertical component in the transfer path of most of the stored charges 120.

[0104] As a result, the transfer time of the accumulated charge 120 from the storage electrode 115 to the readout electrode 117 is shortened, and the readout speed of the pixel signal from the unit pixel 3110 can be increased.

[0105] In addition, since a potential difference is applied between the common electrode 112 and the readout electrode 117 in the substrate thickness direction, by changing the voltage applied to the storage electrode 115 from the voltage during charge storage to the voltage during charge readout, it is possible to smoothly transfer the stored charge 120 to the readout electrode 117.

[0106] Furthermore, it is possible to increase the amount of charge that can be stored by using the semiconductor layer 114 not only on the upper side but also on the sidewall and lower side of the storage electrode 115 as a storage region. That is, since the storage capacitance Q=CV and C=εS / d, when the film thickness d of the insulating film 116 around the storage electrode 115 and the dielectric constant ε of the insulating film 116 are the same and the same voltage V is applied, the storage capacitance can be increased by increasing the area of ​​the storage electrode 115.

[0107] 2. Second embodiment Next, a second embodiment will be described in detail with reference to the drawings. Note that in this embodiment, the same configurations and operations as those of the above-described embodiment will be cited, and redundant description thereof will be omitted.

[0108] Fig. 18 is a cross-sectional view showing a schematic configuration example of an organic photoelectric conversion element and its peripheral portion according to the second embodiment. Specifically, Fig. 18 shows an area including an on-chip lens 133, a planarization film 132, a protective film 131, a common electrode 112, a photoelectric conversion film 113, a semiconductor layer 114, a storage electrode 115, an insulating film 116, a readout electrode 117, various wirings, etc., which are disposed on the light irradiation surface side of the semiconductor substrate 101.

[0109] As shown in Figure 18, the organic photoelectric conversion element PD3 of this embodiment has a configuration similar to that of the organic photoelectric conversion element PD3 of the first embodiment, but the insulating film 116 around the storage electrode 115 is replaced with an insulating film 216.

[0110] The insulating film 216 has a structure in which, for example, the film thickness on the readout electrode 117 side of the storage electrode 115 is thinner than the film thickness on the sidewall of the storage electrode 115 and the photoelectric conversion film 113 side.

[0111] With this structure, even when the same voltage as that exemplified in the first embodiment is applied, it is possible to further reduce the potential of the semiconductor layer 114 in the region of the storage electrode 115 on the readout electrode 117 side (for example, the recessed portion in FIG. 10). This makes it possible to store a larger amount of storage charge 120 during the storage period.

[0112] In addition, during the accumulation period, the accumulated charges 120 in the semiconductor layer 114 on the photoelectric conversion film 113 side of the storage electrode 115 are more likely to move to the readout electrode 117 side of the storage electrode 115. This makes it possible to further reduce the concentration of the accumulated charges 120 in the semiconductor layer 114 on the photoelectric conversion film 113 side of the storage electrode 115 compared to, for example, the first embodiment. This reduces the proportion of the accumulated charges 120 in the semiconductor layer 114 on the photoelectric conversion film 113 side of the storage electrode 115, which is located at a relatively long distance from the readout electrode 117, thereby making it possible to further improve the transfer characteristics.

[0113] The thickness of the insulating film 216 can be set appropriately depending on the optimization of transfer characteristics and the set value of the voltage applied to each electrode (112, 115, and 117).

[0114] For example, as shown in FIG. 19, in addition to the thickness of the insulating film 216 on the readout electrode 117 side of the storage electrode 115, the thickness of the insulating film 216 on the side wall side of the storage electrode 115 may also be thinner than the thickness of the insulating film 216 on the photoelectric conversion film 113 side.

[0115] This further reduces the proportion of the accumulated charges 120 in the semiconductor layer 114 on the photoelectric conversion film 113 side of the storage electrode 115, which is located at a relatively long distance from the readout electrode 117, and therefore makes it possible to further improve the transfer characteristics.

[0116] 20, the thickness of the insulating film 216 on the sidewall side of the storage electrode 115 may be gradually reduced from the top to the bottom of the sidewall. Such a structure can be achieved, for example, by replacing the storage electrode 115 with a storage electrode 215 having a trapezoidal cross-sectional shape. However, this is not limitative, and various modifications are possible, such as changing the outer shape of the cross-sectional shape of the insulating film 216 to an inverted trapezoid.

[0117] In this way, by gradually thinning the thickness of the insulating film 216 on the side wall side of the storage electrode 115 from the top to the bottom of the side wall, it becomes possible to further facilitate the movement of charges on the photoelectric conversion film 113 side of the storage electrode 115 to the readout electrode 117 side of the storage electrode 115.

[0118] The other configurations, operations, and effects may be the same as those of the above-described embodiment, and therefore detailed description thereof will be omitted here.

[0119] 3. Third embodiment Next, a third embodiment will be described in detail with reference to the drawings. Note that in this embodiment, the same configurations and operations as those of the above-described embodiments will be cited, and redundant description thereof will be omitted.

[0120] Fig. 21 is a cross-sectional view showing a schematic configuration example of an organic photoelectric conversion element and its peripheral portion according to the third embodiment. As shown in Fig. 21, the organic photoelectric conversion element PD3 according to the third embodiment has the same configuration as the organic photoelectric conversion element PD3 described in the first embodiment with reference to Fig. 9 etc., except that the insulating film 116 is replaced with an insulating film 316 and the element further includes a shield electrode (fourth electrode) 315.

[0121] For example, the bottom surface of the insulating film 316 is in contact with the readout electrode 117. For example, the storage electrode 115 is disposed near the center between the top surface and the bottom surface of the insulating film 316. The shield electrode 315 is disposed closer to the photoelectric conversion film 113 than the storage electrode 115 is within the insulating film 316 and near the top surface of the insulating film 316.

[0122] This shield electrode 315 is an electrode for individually controlling, for example, the potential of the semiconductor layer 114 on the sidewall side of the storage electrode 115 and the potential of the semiconductor layer 114 on the photoelectric conversion film 113 side of the storage electrode 115.

[0123] Fig. 22 is a plan view showing an example of a planar layout of a shield electrode according to the third embodiment. Fig. 23 is a plan view showing the shield electrode and storage electrode according to the third embodiment as viewed from the light incident direction.

[0124] 22, the shield electrode 315 may have a lattice-like structure including a plurality of apertures A3 arranged in a matrix. Also, as shown in Fig. 23, the number, size, shape, and position of the apertures A3 in the shield electrode 315 may be such that the apertures A3 overlap with the apertures A1 in the storage electrode 115 when the shield electrode 315 and the storage electrode 115 are overlapped. Therefore, as described in the first embodiment with reference to Figs. 13 to 17, when the number, size, shape, and position of the apertures A1 and / or A2 in the storage electrode 115 are changed, the apertures A3 in the shield electrode 315 may also be changed accordingly.

[0125] In such a structure, when electrons generated by photoelectric conversion are used as a signal, during the accumulation period, for example, the voltage of the common electrode 112 can be set to -2V, the voltage of the readout electrode 117 (reset voltage of the floating diffusion region FD) can be set to 3V, the voltage of the storage electrode 115 can be set to 1V, and the voltage of the shield electrode 315 can be set to 0V.

[0126] During the transfer period, the voltage of the common electrode 112 can be set to -2V, the voltage of the readout electrode 117 (the reset voltage of the floating diffusion region FD) to 3V, and the voltage of the storage electrode 115 to -1V.

[0127] At this time, the shield electrode can be dynamically set to −1.5 V or the like to assist the transfer of the stored charge 120 stored in the semiconductor layer 114 on the side wall of the storage electrode 115 to the readout electrode 117 .

[0128] With this structure and voltage control, it is possible to reduce the concentration of the stored charges 120 in the semiconductor layer 114 on the photoelectric conversion film 113 side of the storage electrode 115 compared to, for example, the first embodiment. This reduces the proportion of the stored charges 120 in the semiconductor layer 114 on the photoelectric conversion film 113 side of the storage electrode 115, which is located at a relatively long distance from the readout electrode 117, and therefore makes it possible to further improve the transfer characteristics.

[0129] In this embodiment, since the concentration of the stored charges 120 in the semiconductor layer 114 on the photoelectric conversion film 113 side of the storage electrode 115 is reduced, it is possible to omit the semiconductor layer 114 between the storage electrode 115 and the readout electrode 117. In this case, it is also possible to increase the amount of stored charges 120 in the semiconductor layer 114 on the sidewall side of the storage electrode 115 by adjusting the voltage setting between the storage electrode 115 and the shield electrode 315 or by increasing the height of the storage electrode 115.

[0130] In this embodiment, the voltages applied to the electrodes (112, 115, 117, and 315) may be changed depending on the amount of light irradiation. For example, when it is necessary to accumulate a very large amount of charge, as illustrated in FIG. 24, during the accumulation period, the voltage of the common electrode 112 may be set to −2 V, the voltage of the readout electrode 117 (the reset voltage of the floating diffusion region FD) to 3 V, the voltage of the storage electrode 115 to 0 V, and the voltage of the shield electrode 315 to −0.5 V, thereby increasing the potential of the semiconductor layer 114 on the sidewall side of the storage electrode 115 and preventing the accumulated charge 120 from crossing the potential barrier and leaking to the readout electrode 117 side. In this way, according to this embodiment, an operation in which a large amount of accumulated charge 120 is accumulated is also possible.

[0131] In addition, when the potential of the semiconductor layer 114 on the sidewall side of the storage electrode 115 is increased to prevent leakage of the stored charge 120 to the readout electrode 117, the insulating film 316 on the sidewall side of the storage electrode 115 may be made thinner than the film thickness on other surfaces. This makes it possible to improve the modulatability of the potential of the semiconductor layer 114 on the sidewall side of the storage electrode 115, thereby further improving the effect of preventing leakage of the stored charge 120 to the readout electrode 117.

[0132] The other configurations, operations, and effects may be the same as those of the above-described embodiment, and therefore detailed description thereof will be omitted here.

[0133] 4. Fourth Embodiment Next, a fourth embodiment will be described in detail with reference to the drawings. Note that in this embodiment, the same configurations and operations as those of the above-described embodiments will be cited, and redundant description thereof will be omitted.

[0134] Fig. 25 is a cross-sectional view showing a schematic configuration example of an organic photoelectric conversion element and its peripheral portion according to the fourth embodiment, and Fig. 26 is a plan view showing a planar layout example of a readout electrode according to the fourth embodiment.

[0135] As shown in Figure 25, the organic photoelectric conversion element PD3 of the fourth embodiment has a configuration similar to that of the organic photoelectric conversion element PD3 described in the third embodiment using Figure 21, etc., in which the read electrode 117 is replaced with a read electrode 417.

[0136] 26, the readout electrode 417 has a planar shape whose area is reduced while leaving a region necessary for charge collection. In the example shown in Fig. 26, the readout electrode 417 has a planar shape in which regions corresponding to the opening A3 of the shield electrode 315 and the opening A1 (and A2) of the storage electrode 115 in the substrate thickness direction are left, and the other regions other than the region necessary for connecting the respective regions are removed.

[0137] Such a shape reduces the capacitance of the read electrode 417. Since the read electrode 417 is connected to the floating diffusion region FD, reducing the capacitance of the read electrode 417 increases the conversion efficiency and widens the dynamic range of the unit pixel 3110.

[0138] The shape of the readout electrode 417 is not limited to the lattice shape as exemplified in FIG. 26, and may be variously modified, for example, into a planar shape with a circular cutout.

[0139] The shape of the readout electrode 417 may be changed as appropriate depending on the distance from the readout electrode 417 to the storage electrode 115, the diameter and pitch of the opening A1 of the storage electrode 115, the size of the unit pixel 3110, and the like.

[0140] The other configurations, operations, and effects may be the same as those of the above-described embodiment, and therefore detailed description thereof will be omitted here.

[0141] 5. Fifth Embodiment Next, a fifth embodiment will be described in detail with reference to the drawings. Note that in this embodiment, the same configurations and operations as those of the above-described embodiments will be cited, and redundant description thereof will be omitted.

[0142] Fig. 27 is a cross-sectional view showing a schematic configuration example of an organic photoelectric conversion element and its peripheral portion according to Embodiment 5. As shown in Fig. 27, the organic photoelectric conversion element PD3 according to Embodiment 5 has a configuration similar to that of the organic photoelectric conversion element PD3 described in the fourth embodiment using Fig. 25 etc., in which the semiconductor layer 114 is replaced with a semiconductor layer 514.

[0143] The semiconductor layer 514 has a tapered shape such that its width decreases from the photoelectric conversion film 113 toward the readout electrode 417. Specifically, in the width between the boundary between the insulating film 316 on the sidewall side of the storage electrode 115 and the semiconductor layer 114 and the boundary between the insulating film 316 on the sidewall side of an adjacent storage electrode 115 and the semiconductor layer 114, the width of the lower end on the readout electrode 417 side is narrower than the width of the upper end on the photoelectric conversion film 113 side.

[0144] Such a structure makes it possible to reduce the area required for the readout electrode while maintaining the ease of transfer of charges generated by photoelectric conversion to the region between the storage electrodes 115. As a result, as mentioned in the fourth embodiment, the capacitance of the readout electrode 417 is reduced, which makes it possible to increase the conversion efficiency and widen the dynamic range of the unit pixel 3110.

[0145] The other configurations, operations, and effects may be the same as those of the above-described embodiment, and therefore detailed description thereof will be omitted here.

[0146] 5.1 First variant The configuration for reducing the area required for the readout electrode is not limited to the configuration described above with reference to Fig. 27. For example, as illustrated in Fig. 28, a configuration is also possible in which a collection electrode 515 surrounded by an insulating film 516 is disposed above the readout electrode 517 and closer to the storage electrode 115 (for example, directly above the readout electrode 517).

[0147] In this configuration, when reading out charges, a predetermined voltage is applied to the collecting electrode 515 to modulate the potential in the semiconductor layer 114, which makes it possible to effectively guide the accumulated charges 120 accumulated around the accumulated charges 120 to a specific region of the readout electrode 517, thereby making it possible to reduce the area required for the readout electrode 117.

[0148] 5.2 Second variant 29, the semiconductor layer 514 from the storage electrode 115 to the readout electrode 117 may be replaced with a tapered semiconductor layer 524 that tapers toward the readout electrode 517.

[0149] In this configuration, during charge readout, the accumulated charges 120 accumulated around the accumulated charges 120 flow along the boundary between the semiconductor layer 524 and the insulating layer 111, thereby reducing the area required for the readout electrode 517. In addition, since it is possible to omit the collection electrode 515 and the insulating film 516 around it, it is also possible to achieve easier design and a simpler manufacturing process.

[0150] 5.3 Third variant Furthermore, as illustrated in FIG. 30, in addition to the configuration illustrated in the second modified example, it is also possible to arrange a modulation electrode 525 in the insulating layer 111 near the slope of the semiconductor layer 524.

[0151] In this configuration, when reading out charges, a predetermined voltage is applied to the modulation electrode 525 to modulate the potential in the semiconductor layer 524 from the outside, which makes it possible to effectively guide the accumulated charges 120 accumulated around the accumulated charges 120 to a specific region of the readout electrode 517, thereby further reducing the area required for the readout electrode 517.

[0152] 6. Sixth Embodiment Next, a sixth embodiment will be described in detail with reference to the drawings. Note that in this embodiment, the same configurations and operations as those of the above-described embodiments will be cited, and redundant description thereof will be omitted.

[0153] Fig. 31 is a cross-sectional view showing a schematic configuration example of an organic photoelectric conversion element and its peripheral portion according to the sixth embodiment. As shown in Fig. 31, the organic photoelectric conversion element PD3 according to the sixth embodiment has a structure similar to that of the organic photoelectric conversion element PD3 described in the third embodiment with reference to Fig. 21 etc., except that the storage electrode 115 is replaced with a storage electrode 615 and the readout electrode 117 is replaced with readout electrodes 617A and 617B.

[0154] The storage electrode 615 may be composed of two electrically separated storage electrodes, but is not limited to this, and it is sufficient that it has at least two regions 615A and 615B that divide the storage region into two different regions.

[0155] For example, in the structure including the shield electrode 315 as exemplified in the third embodiment, most of the accumulated charges 120 are accumulated in the semiconductor layer 14 on the sidewall side of the storage electrode 615. Therefore, in order to divide at least the accumulation region into two different regions, the opening A4 of the storage electrode 615 may be shaped to divide it into two systems S1 and S2, as exemplified in FIG. 32 or 33.

[0156] In this way, by dividing the storage electrode and readout electrode in one unit pixel 3110 into two storage electrodes 615 (regions 615A and 615B) and two readout electrodes 617A and 617B, it becomes possible to acquire image plane phase difference information.

[0157] That is, according to the structure of this embodiment, the accumulated charges 120 generated by photoelectric conversion of light that has traveled two different paths are accumulated in different accumulation regions in the semiconductor layer 114 by the regions 615A and 615B of the accumulation electrode 615. Furthermore, by dividing the readout electrode into two readout electrodes 617A and 617B, the accumulated charges 120 accumulated in different accumulation regions in the semiconductor layer 114 can be transferred separately to the readout electrode 617A or 617B.

[0158] Therefore, for example, the accumulated charge 120 generated by photoelectric conversion of incident light during a certain period is read out from readout electrode 617A, and the accumulated charge 120 generated by photoelectric conversion of incident light during a later period is read out from readout electrode 617B, and by calculating the ratio of each, it is possible to determine the distance to the target object.

[0159] Furthermore, by dividing the storage electrode 115 and the readout electrode 117 into three or more electrodes, it is possible to construct a so-called light field camera that can acquire more detailed light ray information.

[0160] The other configurations, operations, and effects may be the same as those of the above-described embodiment, and therefore detailed description thereof will be omitted here.

[0161] 7. Seventh Embodiment Next, a seventh embodiment will be described in detail with reference to the drawings. In this embodiment, the same configurations and operations as those of the above-described embodiments will be cited, and redundant description will be omitted.

[0162] Fig. 34 is a cross-sectional view showing a schematic configuration example of an organic photoelectric conversion element and its peripheral portion according to the seventh embodiment. As shown in Fig. 34, the organic photoelectric conversion element PD3 according to the seventh embodiment has a configuration similar to that of the organic photoelectric conversion element PD3 described in the sixth embodiment using Fig. 31 etc., but has a structure in which the storage electrode 115 is divided into two storage electrodes 715A and 715B instead of the readout electrode 117.

[0163] 35 and 36 are plan views showing examples of the planar layout of storage electrodes according to the seventh embodiment. As shown in Fig. 35 or 36, the storage electrodes 715A and 715B have a structure in which they are electrically separated into two storage electrodes 715A and 715B in a planar layout similar to that of the storage electrode 615 described in the sixth embodiment with reference to Fig. 32 or 33, for example, and which has an opening A4 similar to that of the storage electrode 615.

[0164] With this structure, as in the sixth embodiment, the accumulated charges 120 generated by photoelectric conversion of light that has traveled two different paths can be accumulated in different accumulation regions of the semiconductor layer 114, and the accumulated charges 120 accumulated in the different accumulation regions of the semiconductor layer 114 can be separately transferred to the readout electrode 117, thereby making it possible to obtain image plane phase difference information.

[0165] In addition, in this embodiment, the two systems for reading out the stored charge 120 can share components such as the readout electrode 117, the through electrode 119, and the floating diffusion region FD3, which makes it possible to improve the layout efficiency of the unit pixel 3110.

[0166] The other configurations, operations, and effects may be the same as those of the above-described embodiment, and therefore detailed description thereof will be omitted here.

[0167] 8. Eighth Embodiment Next, an eighth embodiment will be described in detail with reference to the drawings. Note that in this embodiment, the same configurations and operations as those of the above-described embodiments will be cited, and redundant description thereof will be omitted.

[0168] Fig. 37 is a cross-sectional view showing a schematic configuration example of an organic photoelectric conversion element and its peripheral portion according to the eighth embodiment. As shown in Fig. 37, the organic photoelectric conversion element PD3 according to the eighth embodiment has a configuration similar to that of the organic photoelectric conversion element PD3 described in the sixth or seventh embodiment using Fig. 31 or 34, for example, but has a structure in which both the readout electrode 117 and the storage electrode 115 are divided into two storage electrodes 815A and 815B and two readout electrodes 817A and 817B. In addition, in this embodiment, the shield electrode 315 is omitted.

[0169] In this embodiment, the storage electrodes 815A and 815B are not used to store charges, but are used as electrodes for controlling the potential of the surrounding semiconductor layer 114 (potential control electrodes).

[0170] In general, distance measuring devices that use image sensors and adopt ToF (Time of Flight) operation as their distance measuring method must quickly distribute and transfer the electric charge generated by photoelectric conversion to the left and right within a single pixel.

[0171] Therefore, as in the eighth embodiment, both the readout electrode and the storage electrode are divided into two storage electrodes 815A and 815B and two readout electrodes 817A and 817B, and the storage electrodes 815A and 815B are used as potential control electrodes that control the potential of the surrounding semiconductor layer 114. This makes it possible to quickly distribute the charge generated by photoelectric conversion to either of the two readout electrodes 817A and 817B by alternately changing the voltage applied to the storage electrodes 815A and 815B.

[0172] The other configurations, operations, and effects may be the same as those of the above-described embodiment, and therefore detailed description thereof will be omitted here.

[0173] 9. Ninth embodiment Next, a ninth embodiment will be described in detail with reference to the drawings. Note that in this embodiment, the same configurations and operations as those of the above-described embodiments will be cited, and redundant description thereof will be omitted.

[0174] The organic photoelectric conversion element PD3 according to this embodiment may be similar to the organic photoelectric conversion element PD3 described in the eighth embodiment with reference to Fig. 37. However, in this embodiment, the driving of the organic photoelectric conversion element PD3 and the roles of the read electrodes 817A and 817B are different from those in the eighth embodiment.

[0175] As shown in FIG. 38, in this embodiment, similar to the eighth embodiment, both the readout electrode and the storage electrode are divided into two storage electrodes 815A and 815B and two readout electrodes 817A and 817B.

[0176] In this configuration, in this embodiment, for example, during the exposure period, the charges generated by photoelectric conversion are attracted to the storage electrode 815A and continue to be read out from the readout electrode 817A, while during the shutter period, the charges generated by photoelectric conversion are attracted to the storage electrode 815B and continue to be read out from the readout electrode 817B.

[0177] At this time, the readout electrode 817A is connected to the floating diffusion region FD3. Therefore, the charges generated by photoelectric conversion during the exposure period are accumulated in the floating diffusion region FD and read out as pixel signals by the column processing circuit 3103. On the other hand, during the shutter period, the readout electrode 817B is connected to the power supply voltage VDD. Therefore, the charges generated by photoelectric conversion during the shutter period are discharged to the power supply voltage VDD side.

[0178] By operating in this manner, the shutter operations of all the unit pixels 3110 start simultaneously, that is, a so-called global shutter operation becomes possible.

[0179] The other configurations, operations, and effects may be the same as those of the above-described embodiment, and therefore detailed description thereof will be omitted here.

[0180] 10. Tenth embodiment Next, a tenth embodiment will be described in detail with reference to the drawings. Note that in this embodiment, the same configurations and operations as those of the above-described embodiments will be cited, and redundant description thereof will be omitted.

[0181] Fig. 39 is a cross-sectional view showing a schematic configuration example of an organic photoelectric conversion element and its peripheral portion according to the tenth embodiment. As shown in Fig. 39, the organic photoelectric conversion element PD3 according to the tenth embodiment has a configuration similar to that of the organic photoelectric conversion element PD3 described in the eighth embodiment using Fig. 37 etc., except that the readout electrodes 817A and 817B are replaced with one readout electrode 117, the insulating film 316 covering each of the storage electrodes 815A and 815B is replaced with an insulating film 116 that does not reach the readout electrode 117, and the semiconductor layer 114 is replaced with a semiconductor layer 914 that does not have a trench for each of the storage electrodes 815A and 815B.

[0182] In this structure, in this embodiment, during the exposure period, charges are accumulated around the storage electrode 815B, and at the timing when the shutter operation starts, the accumulated charges 120 are simultaneously transferred from the periphery of the storage electrode 815B to the periphery of the storage electrode 815A and held in all the unit pixels 3110. Thereafter, the accumulated charges 120 (not shown) are sequentially transferred from the periphery of the storage electrode 815A to the readout electrode 117 and read out.

[0183] In this way, by simultaneously performing a shutter operation on all unit pixels 3110, storing the resulting charge in the storage electrode 815B, and later reading it out in sequence from each unit pixel 3110, a global shutter operation is possible in which a shutter operation is simultaneously performed on all unit pixels 3110.

[0184] That is, in this embodiment, the storage electrode 115B functions as a memory that stores the charge generated by the shutter operation.

[0185] In this embodiment, by using transparent materials for all components of the organic photoelectric conversion element PD3, including the storage electrodes 815A and 815B, there is no need to shield the memory area from light, making it possible to realize a highly sensitive global shutter structure that makes maximum use of the area within the unit pixel 3110.

[0186] The other configurations, operations, and effects may be the same as those of the above-described embodiment, and therefore detailed description thereof will be omitted here.

[0187] 11. Eleventh embodiment Next, an eleventh embodiment will be described in detail with reference to the drawings. Note that in this embodiment, the same configurations and operations as those of the above-described embodiments will be cited, and redundant description thereof will be omitted.

[0188] Fig. 40 is a cross-sectional view showing a schematic configuration example of an organic photoelectric conversion element and its peripheral portion according to the 11th embodiment. As shown in Fig. 40, the organic photoelectric conversion element PD3 according to the 11th embodiment has a configuration similar to that of the organic photoelectric conversion element PD3 described in the third embodiment using Fig. 21 etc., but further includes a memory electrode (fifth electrode) 1116 between the storage electrode 115 and the readout electrode 117 in the insulating film 316.

[0189] In this structure, in this embodiment, during the exposure period, charges are accumulated in the storage electrodes 115 close to the photoelectric conversion film 113, and at the timing when the shutter operation starts, the accumulated charges 120 are simultaneously transferred from the periphery of the storage electrodes 115 to the periphery of the memory electrodes 1116 in all unit pixels 3110 and held there. After that, the accumulated charges 120 are sequentially transferred from the periphery of the memory electrodes 1116 to the readout electrodes 117 and read out.

[0190] In this way, a shutter operation is performed simultaneously on all unit pixels 3110, the resulting charge is stored in the memory electrode 1116, and later read out sequentially from each unit pixel 3110, thereby enabling a global shutter operation in which a shutter operation is performed simultaneously on all unit pixels 3110.

[0191] Furthermore, in this embodiment, compared to the ninth or tenth embodiment, for example, the memory region is not provided in the horizontal direction (direction perpendicular to the substrate thickness direction) of the storage electrode 115, but is provided in the vertical direction (substrate thickness direction), so that it is possible to prevent the size of the storage region from being reduced by the memory region, thereby realizing a global shutter structure that maximizes the amount of stored charge.

[0192] In this embodiment, when electrons generated by photoelectric conversion are used as a signal, during the accumulation period, for example, the voltage of the common electrode 112 can be set to -2 V, the voltage of the readout electrode 117 can be set to 3 V, the voltage of the shield electrode 315 can be set to 0 V, the voltage of the storage electrode 115 can be set to 1 V, and the voltage of the memory electrode 1116 can be set to 0.5 V.

[0193] During the transfer period, the voltage of the shield electrode 315 can be set to -2V, the voltage of the storage electrode 115 can be set to -1V, and the voltage of the memory electrode 1116 can be set to 1V.

[0194] The other configurations, operations, and effects may be the same as those of the above-described embodiment, and therefore detailed description thereof will be omitted here.

[0195] 12. Twelfth embodiment Next, a twelfth embodiment will be described in detail with reference to the drawings. Note that in this embodiment, the same configurations and operations as those of the above-mentioned embodiments will be cited, and redundant description thereof will be omitted.

[0196] Fig. 41 is a cross-sectional view showing a schematic configuration example of an organic photoelectric conversion element and its peripheral portion according to the twelfth embodiment. As shown in Fig. 41, the organic photoelectric conversion element PD3 according to the twelfth embodiment has a structure in which storage electrodes 115 surrounded by insulating films 116 are provided in multiple stages in the substrate thickness direction in the same configuration as the organic photoelectric conversion element PD3 described in the first embodiment using Fig. 9 etc. In order to realize this multi-stage structure, the semiconductor layer 114 is thickened in the substrate thickness direction.

[0197] With this structure, by independently controlling each of the three-dimensionally arranged storage electrodes 115 before the charges generated by photoelectric conversion are read out from the readout electrode 117, it becomes possible to perform calculations such as adding and subtracting charges.

[0198] For example, the charge generated by the first shutter operation is held around one storage electrode 115, and the charge generated by the second shutter operation is held around another storage electrode 115, and then these charges are gathered around one storage electrode 115, making it possible to add the charges.

[0199] As described above, according to this embodiment, it is possible to perform calculations within the organic photoelectric conversion element PD3 before reading out pixel signals from the unit pixel 3110, making it possible to perform advanced calculations such as pixel addition and image recognition within the image sensor.

[0200] Furthermore, by increasing the number of storage electrodes 115 provided in one unit pixel 3110, it is possible to make the calculation processing executable within each unit pixel 3110 more complex.

[0201] It should be noted that the storage electrodes 115 do not need to be arranged in multiple stages in the substrate thickness direction within each organic photoelectric conversion element PD3, and it is also possible to perform calculation processing within each unit pixel 3110 by arranging multiple storage electrodes 115 in a plane perpendicular to the substrate thickness direction.

[0202] The other configurations, operations, and effects may be the same as those of the above-described embodiment, and therefore detailed description thereof will be omitted here.

[0203] 13. Thirteenth embodiment Next, a thirteenth embodiment will be described in detail with reference to the drawings. Note that in this embodiment, the same configurations and operations as those of the above-described embodiments will be cited, and redundant description thereof will be omitted.

[0204] In this embodiment, a method for manufacturing the image sensor 100 exemplified in the first embodiment will be described. Figures 42 to 48 are process cross-sectional views for explaining the manufacturing method according to the thirteenth embodiment. Note that the manufacturing method exemplified in this embodiment may be a manufacturing method using wafer-level CSP (Chip Size Packaging) technology, which includes bonding the photosensor chip 3121 and the circuit chip 3122 together in a wafer state before being divided into individual pieces.

[0205] In this manufacturing method, first, P-type semiconductor regions 102 and 104 and N-type semiconductor regions 103 and 105 for forming photodiodes PD1 and PD2 are formed by sequentially ion-implanting predetermined acceptors and donors into predetermined regions in a P-type semiconductor substrate 101. Note that an element isolation region for isolating the photodiodes PD1 and PD2 and various transistors between adjacent unit pixels 3110 may be provided at the boundary between adjacent unit pixels 3110. This element isolation region may have a structure in which an insulating film and / or a light-shielding film is formed in a trench formed in the semiconductor substrate 101, or may be a channel stopper for preventing the formation of a channel spanning between adjacent unit pixels 3110.

[0206] Next, a transfer transistor TRG1, which is a vertical transistor, is formed on the surface (the lower surface in the drawing) of the semiconductor substrate 101. Next, an insulating film 106 that serves as the gate insulating film of each transistor that constitutes the readout circuit of each of the pixels 3110B, 3110R, and 3110G, and a gate electrode are formed. After processing the gate electrode, sidewalls are formed on the side walls of the gate electrode, and then ion implantation is performed using the gate electrode and sidewalls as a mask to form the source and drain of each transistor that constitutes the readout circuit.

[0207] Thereafter, a wiring layer 121 including wiring 122 connected to the gate electrodes, sources, drains, etc. of each transistor is formed on the surface of the semiconductor substrate 101. At this stage, a separately prepared circuit chip 3122 and a light-receiving chip 3121 including the semiconductor substrate 101 may be bonded together.

[0208] Next, a trench is formed from the back surface of the semiconductor substrate 101 through the semiconductor substrate 101, and an anti-reflection film 110 is formed to cover the back surface of the semiconductor substrate 101 and the inside of the trench, an insulating film (part of the insulating layer 111) is formed to fill the inside of the trench, a through electrode 119 is formed in the trench through the semiconductor substrate 101 to connect to the wiring in the wiring layer 121, and a wiring 118 is formed to connect to the through electrode.

[0209] Next, a transparent electrode material is deposited on the insulating film, and the formed transparent electrode material film is processed by photolithography and dry etching. Subsequently, an insulating film (part of the insulating layer 111) is deposited so as to fill the processed transparent electrode material film, and the upper surface thereof is planarized by CMP (Chemical Mechanical Polishing) or the like to form the read electrode 117. This results in the cross-sectional structure shown in FIG.

[0210] Next, a semiconductor material is deposited on the insulating film on which the read electrode 117 is formed, and the formed semiconductor film is processed by photolithography and dry etching. Subsequently, an insulating film (part of the insulating layer 111) is deposited so as to fill the processed semiconductor film, and the upper surface thereof is planarized by CMP or the like to form the semiconductor layer 114A that will be the lower part of the semiconductor layer 114.

[0211] Next, the steps include depositing an insulating film 116A that will become the lower part of the insulating film 116, depositing a transparent conductive material film 15A that will be processed into the storage electrode 115, processing the transparent electrode material film 115A using photolithography and dry etching, depositing an insulating film (part of the insulating layer 111), planarizing the upper surfaces of the transparent electrode material film 115A and the insulating film using CMP or the like, and depositing an insulating film 116B that will become the lower part of the insulating film 116, thereby forming a layered structure that will later become the storage electrode 115 and insulating film 116, as shown in Figure 43.

[0212] Next, the insulating film 116B, the transparent electrode material film 115A, and the insulating film 116A are processed by photolithography and dry etching to form an opening region and process the transparent electrode material film 115A into the storage electrode 115, as shown in FIG.

[0213] 45, an insulating film 116C is formed to cover the surface of the insulating layer 111 at this stage. Subsequently, a portion of the insulating film 116C is removed by etching back or the like to expose the semiconductor layer 114A in the opening region, and an insulating film is formed on the side surface of the storage electrode 115. As a result, an insulating film 116 covering the storage electrode 115 is formed, as shown in FIG.

[0214] Next, a semiconductor material is deposited on the surface on which the storage electrode 115 and insulating film 116 are formed, and the surface of the semiconductor layer thus formed is planarized by CMP or the like, thereby forming the semiconductor layer 114 around the insulating film 116 that covers the storage electrode 115, as shown in FIG.

[0215] 48, a photoelectric conversion film 113, a common electrode 112, a protective film 131, and a planarization film 132 are sequentially deposited on the semiconductor layer 114. Thereafter, a wiring structure for the common electrode 112, an on-chip lens 133 for each unit pixel 3110, and bonding pads are formed, thereby fabricating an image sensor 100 having the cross-sectional structure illustrated in FIG.

[0216] In the above-described manufacturing method, the semiconductor layers 114A and 114 can also be formed by PVD (Physical Vapor Deposition), spin coating, or the like. Furthermore, to improve device characteristics, the photoelectric conversion film 113 can also be a film in which several types of materials are mixed, or a laminated film in which several types of material films are laminated. In this case, some of the mixed or laminated materials may not themselves perform photoelectric conversion.

[0217] 13.1 Manufacturing process details for each component The manufacturing process for each component is described in more detail below.

[0218] The various electrodes can be formed by a dry method or a wet method.

[0219] Dry processes include PVD and CVD (Chemical Vapor Deposition). Film formation methods based on the principles of PVD include vacuum deposition using resistance heating or high-frequency heating, electron beam (EB) deposition, various sputtering methods (magnetron sputtering, RF-DC coupled bias sputtering, electron cyclotron resonance (ECR) sputtering, facing target sputtering, high-frequency sputtering, etc.), ion plating, laser ablation, molecular beam epitaxy, and laser transfer. CVD methods include plasma CVD, thermal CVD, metalorganic (MO) CVD, and photo-CVD.

[0220] On the other hand, examples of wet methods include electrolytic plating, electroless plating, spin coating, inkjet printing, spray coating, stamping, microcontact printing, flexographic printing, offset printing, gravure printing, dipping, etc. Examples of patterning methods include chemical etching such as shadow masking, laser transfer, and photolithography, and physical etching using ultraviolet light, lasers, etc.

[0221] As a technique for planarizing the readout electrode 117 and the common electrode 112, a laser planarization method, a reflow method, a CMP method, or the like can be used.

[0222] The insulating film 116 can be made of a silicon oxide material or a silicon nitride (SiN YExamples of suitable insulating materials include inorganic insulating materials such as metal oxide high-dielectric insulating materials (e.g., aluminum oxide (Al2O3)), as well as organic insulating materials (organic polymers) such as polymethyl methacrylate (PMMA), polyvinylphenol (PVP), polyvinyl alcohol (PVA), polyimide, polycarbonate (PC), polyethylene terephthalate (PET), polystyrene, silanol derivatives (silane coupling agents) such as N-2(aminoethyl)3-aminopropyltrimethoxysilane (AEAPTMS), 3-mercaptopropyltrimethoxysilane (MPTMS), and octadecyltrichlorosilane (OTS), novolac-type phenolic resins, fluorine-based resins, and straight-chain hydrocarbons having a functional group at one end capable of bonding to a control electrode, such as octadecanethiol and dodecyl isocyanate. Combinations of these materials can also be used.

[0223] Silicon oxide materials include silicon oxide (SiO X ), BPSG, PSG, BSG, AsSG, PbSG, silicon oxynitride (SiON), SOG (spin-on glass), and low dielectric constant materials (e.g., polyaryl ether, cycloperfluorocarbon polymer and benzocyclobutene, cyclic fluororesin, polytetrafluoroethylene, fluorinated aryl ether, fluorinated polyimide, amorphous carbon, and organic SOG).

[0224] Furthermore, the material constituting the insulating film of the insulating layer 111 and the wiring layer 121 may also be selected appropriately from these materials.

[0225] Methods for forming various organic layers such as the photoelectric conversion film 113 include dry film formation and wet film formation.

[0226] Dry film formation methods include vacuum deposition using resistance heating, high-frequency heating, or electron beam heating, flash deposition, plasma deposition, EB deposition, various sputtering methods (two-pole sputtering, direct current sputtering, direct current magnetron sputtering, high-frequency sputtering, magnetron sputtering, RF-DC coupled bias sputtering, ECR sputtering, facing target sputtering, high-frequency sputtering, and ion beam sputtering), DC (direct current) method, RF method, multi-cathode method, activation reaction method, field deposition method, various ion plating methods such as high-frequency ion plating and reactive ion plating, laser ablation, molecular beam epitaxy, laser transfer method, and molecular beam epitaxy (MBE).

[0227] Examples of the CVD method include plasma CVD, thermal CVD, MOCVD, and photo-CVD.

[0228] On the other hand, specific examples of wet methods include various printing methods such as spin coating, dipping, casting, microcontact printing, drop casting, screen printing, inkjet printing, offset printing, gravure printing, and flexographic printing, and various coating methods such as stamping, spraying, air doctor coater, blade coater, rod coater, knife coater, squeeze coater, reverse roll coater, transfer roll coater, gravure coater, kiss coater, cast coater, spray coater, slit orifice coater, and calendar coater.

[0229] In the coating method, examples of the solvent include non-polar or low polar organic solvents such as toluene, chloroform, hexane, and ethanol.

[0230] Examples of methods for patterning various organic layers include chemical etching such as shadow masking, laser transfer, and photolithography, and physical etching using ultraviolet light or a laser.

[0231] As a technique for planarizing the various organic layers, a laser planarization method, a reflow method, or the like can be used.

[0232] 14. Fourteenth embodiment Next, a fourteenth embodiment will be described in detail with reference to the drawings. Note that in this embodiment, the same configurations and operations as those of the above-described embodiments will be cited, and redundant description thereof will be omitted.

[0233] In this embodiment, a method for manufacturing the image sensor 100 exemplified in the third embodiment will be described. FIGS. 49 to 53 are process cross-sectional views for explaining a manufacturing method according to a fourteenth embodiment. Note that in this embodiment, the same manufacturing steps as those in the thirteenth embodiment will be referred to, and redundant explanations thereof will be omitted. Furthermore, the manufacturing method exemplified in this embodiment may be a manufacturing method using wafer-level CSP technology, which includes bonding the photosensor chip 3121 and the circuit chip 3122 together in a wafer state before being divided into individual pieces, as in the thirteenth embodiment.

[0234] In this manufacturing method, first, a read electrode 117 is formed on the surface of an insulating film (part of the insulating layer 111) formed on the back surface of the semiconductor substrate 101 by going through a process similar to that described using Figure 42 in the 13th embodiment.

[0235] Next, on the insulating film on which the read electrode 117 is formed, the following steps are performed in sequence: depositing an insulating film 316A (part of the insulating layer 111 and part of the insulating film 316), planarizing the surface of the insulating film 316A, depositing a transparent electrode material film, patterning the transparent electrode material film into a transparent electrode material film 115A by photolithography and dry etching, depositing an insulating film (part of the insulating layer 111), planarizing the surface of this insulating film and the surface of the transparent electrode material film 115A, depositing an insulating film 316B (part of the insulating layer 111 and part of the insulating film 316), planarizing the surface of the insulating film 316B, depositing a transparent electrode material film, patterning the transparent electrode material film into a transparent electrode material film 315A by photolithography and dry etching, depositing an insulating film (part of the insulating layer 111), and planarizing the surface of this insulating film and the surface of the transparent electrode material film 315A. This results in the cross-sectional structure shown in FIG.

[0236] Next, the transparent electrode material film 315A, the insulating film 316B, the transparent electrode material film 115A and the insulating film 316A are processed by photolithography and dry etching to form an opening region and process the transparent electrode material film 315A into the shield electrode 315, and process the transparent electrode material film 115A into the storage electrode 115, as shown in FIG. 50.

[0237] 51, an insulating film C16C is formed to cover the surface of the insulating layer 111 at this stage. Subsequently, a portion of the insulating film 316C is removed by etching back or the like to expose the readout electrode 117 in the opening region, and an insulating film is formed on the side surfaces of the storage electrode 115 and the shield electrode 315. As a result, an insulating film 316 is formed to cover the storage electrode 115 and the shield electrode 315, as shown in FIG.

[0238] Next, a semiconductor material is deposited on the surface on which the storage electrode 115, the shield electrode 315, and the insulating film 316 are formed, and the surface of the semiconductor layer thus formed is planarized by CMP or the like. As a result, the semiconductor layer 114 is formed around the insulating film 316 that covers the storage electrode 115 and the shield electrode 315, as shown in Fig. 53.

[0239] Thereafter, the same steps as those described in the thirteenth embodiment with reference to FIG. 48 and subsequent steps are carried out to fabricate the image sensor 100 having the cross-sectional structure illustrated in FIG.

[0240] 15. Fifteenth embodiment Next, a fifteenth embodiment will be described in detail with reference to the drawings. Note that in this embodiment, the same configurations and operations as those of the above-described embodiments will be cited, and redundant description thereof will be omitted.

[0241] Fig. 54 is a cross-sectional view showing a schematic configuration example of an organic photoelectric conversion element and its peripheral portion according to embodiment 15. As shown in Fig. 54, the organic photoelectric conversion element PD3 according to embodiment 15 has a structure similar to that of the organic photoelectric conversion element PD3 described in the third embodiment using Fig. 21 etc., in which the semiconductor layer 114 is replaced with a semiconductor layer 1514.

[0242] For example, the potential of the semiconductor layer 114 in the image sensor 100 exemplified in the third and fourteenth embodiments can be controlled three-dimensionally by controlling the voltages applied to the common electrode 112, the storage electrode 115, the shield electrode 315, and the readout electrode 117. Similarly, the potential of the semiconductor layer 114 in the other embodiments can be controlled three-dimensionally by controlling the voltages applied to each electrode.

[0243] Therefore, in this embodiment, the material and composition of the semiconductor layer 1514 are changed to form a continuous or multi-layer structure so that the charges generated by photoelectric conversion can be smoothly transferred to the readout electrode 117. For example, as shown in Fig. 54, the semiconductor layer 1514 is composed of an uppermost semiconductor layer 1514a made of a material and composition having the highest potential, a middle semiconductor layer 1514b made of a material and composition having the next highest potential, and a lowermost semiconductor layer 1514c made of a material and composition having the lowest potential.

[0244] Note that continuous or stepwise changes in the potential in the semiconductor layer 1514 can be achieved by, for example, changing the film formation conditions or the material mixture ratio during the formation of the semiconductor layer 1514, performing PVD using different targets in layers, or spin-coating different materials in layers.

[0245] The other configurations, operations, and effects may be the same as those of the above-described embodiment, and therefore detailed description thereof will be omitted here.

[0246] 16. Sixteenth embodiment Next, a sixteenth embodiment will be described in detail with reference to the drawings. Note that in this embodiment, the same configurations and operations as those of the above-described embodiments will be cited, and redundant description thereof will be omitted.

[0247] Fig. 55 is a cross-sectional view showing a schematic configuration example of an organic photoelectric conversion element and its peripheral parts according to embodiment 16. As shown in Fig. 55, the organic photoelectric conversion element PD3 according to embodiment 16 has a structure similar to that of the organic photoelectric conversion element PD3 described in the third embodiment using Fig. 21 etc., in which the photoelectric conversion film 113 is replaced with a photoelectric conversion film 1613.

[0248] The photoelectric conversion film 1613 has a structure in which, for example, a part of it protrudes into the semiconductor layer 114 within the opening region of the storage electrode 115. By making at least a part of the photoelectric conversion film 1613 protrude toward the storage electrode 115 in this way, it is possible to shorten the distance from this protruding part to the storage region around the storage electrode 115. This makes it possible to shorten the travel distance of the charges generated by photoelectric conversion to the storage region, thereby making it possible to further increase the readout speed of pixel signals from each unit pixel 3110.

[0249] Furthermore, as illustrated in Figure 55, by extending the photoelectric conversion film 1613 to the side wall of the storage electrode 115, it is possible to minimize the distance traveled by the charges generated by photoelectric conversion, thereby further increasing the readout speed of pixel signals from each unit pixel 3110.

[0250] However, the photoelectric conversion film 1613 does not need to protrude into the opening region of the storage electrode 115, and it is sufficient if at least a part of it protrudes toward the storage electrode 115, as shown in FIG.

[0251] The other configurations, operations, and effects may be the same as those of the above-described embodiment, and therefore detailed description thereof will be omitted here.

[0252] 16.1 Variations 57, in addition to the photoelectric conversion film 1613, a part of the common electrode 1612 may also be protruded toward the storage electrode 115. This increases the probability of photoelectric conversion occurring in the protruding part of the photoelectric conversion film 1613, further shortening the average travel distance of charges generated by photoelectric conversion. As a result, it becomes possible to further increase the readout speed of pixel signals from each unit pixel 3110.

[0253] 17. Seventeenth embodiment Next, a seventeenth embodiment will be described in detail with reference to the drawings. Note that in this embodiment, the same configurations and operations as those of the above-described embodiments will be cited, and redundant description thereof will be omitted.

[0254] Fig. 58 is a cross-sectional view showing a schematic configuration example of an organic photoelectric conversion element and its peripheral portion according to the seventeenth embodiment. As shown in Fig. 58, the organic photoelectric conversion element PD3 according to the seventeenth embodiment has a structure in which a plurality of storage electrodes (fifth electrodes) 115 are arranged in multiple stages in the substrate thickness direction in the same configuration as the organic photoelectric conversion element PD3 described in the third embodiment using Fig. 21 etc.

[0255] With this structure, the potential of the semiconductor layer 114 in the opening region of the storage electrode 115 can be efficiently modulated along the charge transfer path, and the stored charge 120 can be smoothly transferred in the substrate thickness direction, as in the case where the transfer direction of a CCD (Charge Coupling Device) is the substrate thickness direction. As a result, even if the transfer distance of the charge generated by photoelectric conversion becomes long, the readout speed can be increased by smooth transfer of the stored charge 120.

[0256] The other configurations, operations, and effects may be the same as those of the above-described embodiment, and therefore detailed description thereof will be omitted here.

[0257] 18. Eighteenth embodiment Next, an eighteenth embodiment will be described in detail with reference to the drawings. Note that in this embodiment, the same configurations and operations as those of the above-described embodiments will be cited, and redundant description thereof will be omitted.

[0258] Fig. 59 is a cross-sectional view showing a schematic configuration example of an organic photoelectric conversion element and its peripheral portion according to the 18th embodiment. As shown in Fig. 59, the image sensor 100 according to the 18th embodiment has a structure similar to that of the image sensor 100 described in the second embodiment using Fig. 18 etc., in which a color filter 1833 is arranged in the planarization film 132 between the on-chip lens 133 and the organic photoelectric conversion element PD3.

[0259] In this way, not only in the second embodiment but also in the above-described embodiments, by combining the color filter 1833 with the vertically stacked organic photoelectric conversion element PD3 and photodiodes PD1 and PD2, it is possible to further improve the spectral characteristics of the unit pixel 3110 and thereby improve image quality.

[0260] The color filter 1833 may be arranged on the light incident side (hereinafter referred to as the upstream side) of the vertical stack structure of the organic photoelectric conversion element PD3 and the photodiodes PD1 and PD2, as shown in Figure 59, or may be arranged on the downstream side of the vertical stack structure of the organic photoelectric conversion element PD3 and the photodiodes PD1 and PD2, for example, in the insulating layer 111, as shown in Figure 60.

[0261] The color filter in this description may be, for example, a filter having a transmission spectrum that transmits light in a specific wavelength band. Furthermore, various color filters can be used for the color filter 1833, such as those using organic materials, those using plasmon resonance with a patterned metal thin film, and those using Fabry-Perot interference with a dielectric laminate film.

[0262] The other configurations, operations, and effects may be the same as those of the above-described embodiment, and therefore detailed description thereof will be omitted here.

[0263] 19. 19th embodiment Next, a nineteenth embodiment will be described in detail with reference to the drawings. Note that in this embodiment, the same configurations and operations as those of the above-described embodiments will be cited, and redundant description thereof will be omitted.

[0264] Fig. 61 is a cross-sectional view showing a schematic configuration example of an organic photoelectric conversion element and its peripheral portion according to the 19th embodiment. As shown in Fig. 61, the image sensor 100 according to the 19th embodiment has a structure similar to that of the image sensor 100 described in the second embodiment using Fig. 18 etc., in which layer structures T1 and T2 from an insulating layer 111 including an organic photoelectric conversion element PD3 to a planarization film 132 are vertically stacked in two or more layers.

[0265] Two or more organic photoelectric conversion elements PD3 thus fabricated may be connected in parallel to the same readout circuit (see FIG. 6), for example.

[0266] In this way, by vertically stacking the organic photoelectric conversion elements PD3 along the axis of incidence of light, it is possible to improve the spectral characteristics of the unit pixel 3110.

[0267] The other configurations, operations, and effects may be the same as those of the above-described embodiment, and therefore detailed description thereof will be omitted here.

[0268] 20. Twentieth embodiment Next, a twentieth embodiment will be described in detail with reference to the drawings. Note that in this embodiment, the same configurations and operations as those of the above-described embodiments will be cited, and redundant description thereof will be omitted.

[0269] For example, in a structure in which the semiconductor layer 114 on the side of the readout electrode 117 is divided into a plurality of convex portions by the insulating film 316 as in the third embodiment described above, it is also possible to make each convex portion function as a single organic photoelectric conversion element. Therefore, in the twentieth embodiment, an example will be described in which each convex portion in the semiconductor layer 114 is used as an individual organic photoelectric conversion element.

[0270] Fig. 62 is a cross-sectional view showing a schematic configuration example of an organic photoelectric conversion element and its peripheral portion according to the 20th embodiment, and Fig. 63 is a plan view showing a planar layout example of a readout electrode according to the 20th embodiment.

[0271] As shown in Fig. 62, in the twentieth embodiment, an organic photoelectric conversion element PD203 is formed on each of the convex portions 114A separated by the insulating film 316 in the semiconductor layer 114. That is, in this embodiment, as illustrated in Fig. 62 and Fig. 63, for example, the organic photoelectric conversion element PD3 according to the third embodiment is divided into nine organic photoelectric conversion elements PD203 arranged in a 3 × 3 matrix. Note that the number of divisions of the organic photoelectric conversion element PD3 is not limited to the illustrated 9, and may be 2 or more.

[0272] 21 and the like in the third embodiment, the storage electrode 115 and the readout electrode 117 in the third embodiment are replaced with the storage electrode 2015 and the readout electrode 2017 of each organic photoelectric conversion element PD203. Also, in the present embodiment, the on-chip lens 133 in the third embodiment is replaced with the on-chip lens 2033 of each organic photoelectric conversion element PD203.

[0273] As shown in Fig. 63, the readout electrode 2017 is provided individually for each organic photoelectric conversion element PD203. In this embodiment, for example, the readout circuit illustrated in Fig. 6 is connected to each readout electrode 2017. In this case, the charge readout operation for each organic photoelectric conversion element PD203 is performed individually via each readout electrode 2017.

[0274] In this manner, in this embodiment, an individual organic photoelectric conversion element PD203 is formed on each of the convex portions 114A of the semiconductor layer 114. This enables pixel miniaturization to a level that cannot be achieved with the process precision achieved when using conventional silicon as the material. As a result, it becomes possible to significantly increase the number of unit pixels 3110 per unit area, i.e., pixel density (also called resolution).

[0275] In this embodiment, a case based on the third embodiment described above has been illustrated, but this is not limited to this, and this embodiment can be similarly applied to cases based on other embodiments.

[0276] In the above-described configuration, one organic photoelectric conversion element PD203 is configured with one convex portion 114A, but the present invention is not limited to this. One organic photoelectric conversion element PD203 may be configured with two or more convex portions 114A. For example, one of the nine divided organic photoelectric conversion elements PD203 may be used to configure a unit pixel 3110 for HDR (High Dynamic Range), and the remaining eight may be used to configure unit pixels 3110 for LDR (Low Dynamic Range). In such a case, the storage electrode 2015 and the readout electrode 2017 for the two or more convex portions 114A configuring the same organic photoelectric conversion element PD203 may not be divided.

[0277] Furthermore, the on-chip lenses 2033 do not need to be provided one-to-one with each organic photoelectric conversion element PD203, and one on-chip lens 2033 may be provided for a plurality of organic photoelectric conversion elements PD203.

[0278] The other configurations, operations, and effects may be the same as those of the above-described embodiment, and therefore detailed description thereof will be omitted here.

[0279] 20.1 Variation 1 In the above-described twentieth embodiment, an example was given of a case where the storage electrode 2015 is provided individually for each organic photoelectric conversion element PD203, but this is not limited to this. For example, as illustrated in FIG. 63, a common storage electrode 2015 may be provided for multiple or all of the organic photoelectric conversion elements PD203.

[0280] 20.2 Variation 2 Also, for example, as illustrated in FIG. 64, it is possible to provide a memory electrode 2016 behind the storage electrode 2015 (on the readout electrode 2014 side), and configure the stored charge 120 stored near the storage electrode 2015 to be temporarily held around the memory electrode 2016.

[0281] 21. Application Example 1 The technology according to the present disclosure can be applied to various products, for example, an endoscopic surgery system.

[0282] Fig. 66 is a diagram showing an example of the schematic configuration of an endoscopic surgery system 5000 to which the technology according to the present disclosure can be applied. Fig. 66 shows a state in which an operator (doctor) 5067 is performing surgery on a patient 5071 on a patient bed 5069 using the endoscopic surgery system 5000. As shown in the figure, the endoscopic surgery system 5000 is composed of an endoscope 5001, other surgical tools 5017, a support arm device 5027 that supports the endoscope 5001, and a cart 5037 on which various devices for endoscopic surgery are mounted.

[0283] In endoscopic surgery, instead of cutting the abdominal wall and opening the abdomen, multiple tubular drilling instruments called trocars 5025a to 5025d are punctured into the abdominal wall. Then, a lens barrel 5003 of an endoscope 5001 and other surgical instruments 5017 are inserted into the body cavity of a patient 5071 through the trocars 5025a to 5025d. In the illustrated example, as the other surgical instruments 5017, an insufflation tube 5019, an energy treatment instrument 5021, and forceps 5023 are inserted into the body cavity of the patient 5071. The energy treatment instrument 5021 is a treatment instrument that uses high-frequency current or ultrasonic vibration to incise and dissect tissue, seal blood vessels, or the like. However, the illustrated surgical instrument 5017 is merely an example, and various surgical instruments generally used in endoscopic surgery, such as a suction cup or a retractor, may be used as the surgical instrument 5017.

[0284] An image of the area to be operated on inside the body cavity of the patient 5071, captured by the endoscope 5001, is displayed on the display device 5041. An operator 5067 performs treatment such as excising the affected area using the energy treatment tool 5021 and forceps 5023 while viewing the image of the area to be operated on displayed on the display device 5041 in real time. Although not shown in the figures, the insufflation tube 5019, the energy treatment tool 5021, and the forceps 5023 are supported by the operator 5067 or an assistant during surgery.

[0285] (Support arm device) The support arm device 5027 includes an arm portion 5031 extending from a base portion 5029. In the example shown, the arm portion 5031 is composed of joints 5033a, 5033b, and 5033c and links 5035a and 5035b, and is driven under the control of an arm control device 5045. The arm portion 5031 supports the endoscope 5001, and controls its position and orientation. This allows the endoscope 5001 to be stably fixed in position.

[0286] (Endoscopy) The endoscope 5001 is composed of a lens barrel 5003, a region of a predetermined length from the tip of which is inserted into a body cavity of a patient 5071, and a camera head 5005 connected to the base end of the lens barrel 5003. In the example shown in the figure, the endoscope 5001 is configured as a so-called rigid lens barrel having a rigid lens barrel 5003, but the endoscope 5001 may also be configured as a so-called flexible lens barrel having a flexible lens barrel 5003.

[0287] An opening into which an objective lens is fitted is provided at the tip of the lens barrel 5003. A light source device 5043 is connected to the endoscope 5001, and light generated by the light source device 5043 is guided to the tip of the lens barrel by a light guide extending inside the lens barrel 5003, and is irradiated via the objective lens toward an observation target inside the body cavity of the patient 5071. The endoscope 5001 may be a direct-viewing endoscope, an oblique-viewing endoscope, or a side-viewing endoscope.

[0288] An optical system and an image sensor are provided inside the camera head 5005, and light reflected from the object of observation (observation light) is collected onto the image sensor by the optical system. The image sensor photoelectrically converts the observation light to generate an electrical signal corresponding to the observation light, i.e., an image signal corresponding to the observed image. The image signal is transmitted as RAW data to a camera control unit (CCU) 5039. The camera head 5005 is equipped with a function for adjusting the magnification and focal length by appropriately driving the optical system.

[0289] Note that, for example, to support stereoscopic vision (3D display), a plurality of imaging elements may be provided in the camera head 5005. In this case, a plurality of relay optical systems are provided inside the lens barrel 5003 to guide observation light to each of the plurality of imaging elements.

[0290] (Various devices mounted on the cart) The CCU 5039 is configured with a CPU (Central Processing Unit), a GPU (Graphics Processing Unit), etc., and comprehensively controls the operations of the endoscope 5001 and the display device 5041. Specifically, the CCU 5039 performs various image processing, such as development processing (demosaic processing), on the image signal received from the camera head 5005 in order to display an image based on the image signal. The CCU 5039 provides the image signal after the image processing to the display device 5041. The CCU 5039 also transmits a control signal to the camera head 5005 to control its drive. The control signal may include information regarding imaging conditions such as magnification and focal length.

[0291] The display device 5041, under the control of the CCU 5039, displays an image based on an image signal that has been subjected to image processing by the CCU 5039. If the endoscope 5001 is compatible with high-resolution imaging, such as 4K (3840 horizontal pixels × 2160 vertical pixels) or 8K (7680 horizontal pixels × 4320 vertical pixels), and / or is compatible with 3D display, the display device 5041 may be capable of displaying high resolution and / or 3D display, respectively. If the endoscope 5001 is compatible with high-resolution imaging, such as 4K or 8K, a display device 5041 with a size of 55 inches or larger can be used to provide a more immersive experience. Furthermore, multiple display devices 5041 with different resolutions and sizes may be provided depending on the application.

[0292] The light source device 5043 is configured from a light source such as an LED (light emitting diode), and supplies the endoscope 5001 with irradiation light when photographing the operation site.

[0293] The arm control device 5045 is configured by a processor such as a CPU, and operates according to a predetermined program to control the driving of the arm portion 5031 of the support arm device 5027 according to a predetermined control method.

[0294] The input device 5047 is an input interface for the endoscopic surgery system 5000. A user can input various types of information and instructions to the endoscopic surgery system 5000 via the input device 5047. For example, the user inputs various types of information related to surgery, such as physical information about the patient and information about the surgical procedure, via the input device 5047. Furthermore, for example, the user inputs via the input device 5047 an instruction to drive the arm unit 5031, an instruction to change the imaging conditions (type of irradiation light, magnification, focal length, etc.) of the endoscope 5001, an instruction to drive the energy treatment tool 5021, etc.

[0295] The type of input device 5047 is not limited, and may be any of various known input devices. For example, a mouse, a keyboard, a touch panel, a switch, a foot switch 5057, and / or a lever may be used as the input device 5047. When a touch panel is used as the input device 5047, the touch panel may be provided on the display surface of the display device 5041.

[0296] Alternatively, the input device 5047 may be a device worn by the user, such as a glasses-type wearable device or an HMD (Head Mounted Display), and various inputs are made in response to the user's gestures and line of sight detected by these devices. The input device 5047 may also include a camera capable of detecting the user's movements, and various inputs are made in response to the user's gestures and line of sight detected from the video captured by the camera. The input device 5047 may also include a microphone capable of capturing the user's voice, and various inputs are made by voice via the microphone. In this way, the input device 5047 is configured to be able to input various information in a non-contact manner, thereby enabling a user (e.g., a surgeon 5067) in a clean area to operate equipment in an unclean area in a non-contact manner. Furthermore, the user can operate the equipment without removing their hands from the surgical tools they are holding, improving user convenience.

[0297] The treatment tool control device 5049 controls the driving of an energy treatment tool 5021 for cauterizing tissue, incising, sealing blood vessels, etc. The insufflation device 5051 sends gas into the body cavity of the patient 5071 via an insufflation tube 5019 to ensure a clear field of view for the endoscope 5001 and to ensure a working space for the surgeon. The recorder 5053 is a device capable of recording various types of information related to the surgery. The printer 5055 is a device capable of printing various types of information related to the surgery in various formats such as text, images, or graphs.

[0298] Below, the particularly characteristic configuration of the endoscopic surgery system 5000 will be described in more detail.

[0299] (Support arm device) The support arm device 5027 includes a base 5029 serving as a base and an arm 5031 extending from the base 5029. In the illustrated example, the arm 5031 is composed of a plurality of joints 5033a, 5033b, and 5033c and a plurality of links 5035a and 5035b connected by the joint 5033b; however, for simplicity, FIG. 66 illustrates a simplified configuration of the arm 5031. In practice, the shapes, number, and arrangement of the joints 5033a to 5033c and the links 5035a and 5035b, as well as the directions of the rotation axes of the joints 5033a to 5033c, can be appropriately set so that the arm 5031 has the desired degrees of freedom. For example, the arm 5031 can be preferably configured to have six or more degrees of freedom. This allows the endoscope 5001 to be moved freely within the movable range of the arm portion 5031, making it possible to insert the lens barrel 5003 of the endoscope 5001 into the body cavity of the patient 5071 from the desired direction.

[0300] The joints 5033a to 5033c are provided with actuators, and the joints 5033a to 5033c are configured to be rotatable around predetermined rotation axes by driving the actuators. The driving of the actuators is controlled by an arm control device 5045, thereby controlling the rotation angles of the joints 5033a to 5033c and controlling the driving of the arm 5031. This makes it possible to control the position and attitude of the endoscope 5001. In this case, the arm control device 5045 can control the driving of the arm 5031 by various known control methods, such as force control or position control.

[0301] For example, the surgeon 5067 may appropriately input an operation via the input device 5047 (including the foot switch 5057), and the arm control device 5045 may appropriately control the drive of the arm unit 5031 in accordance with the operation input, thereby controlling the position and posture of the endoscope 5001. Through this control, the endoscope 5001 at the tip of the arm unit 5031 can be moved from any position to any other position, and then fixedly supported at the position after movement. The arm unit 5031 may be operated in a so-called master-slave manner. In this case, the arm unit 5031 can be remotely controlled by a user via the input device 5047 installed in a location away from the operating room.

[0302] Furthermore, when force control is applied, the arm control device 5045 may perform so-called power assist control, in which the actuators of the joints 5033a to 5033c are driven to receive an external force from the user and move the arm unit 5031 smoothly in accordance with the external force. This allows the user to move the arm unit 5031 with a relatively light force when moving the arm unit 5031 while directly touching it. This makes it possible to move the endoscope 5001 more intuitively and with a simpler operation, improving user convenience.

[0303] Generally, in endoscopic surgery, the endoscope 5001 is supported by a doctor called a scopist. However, by using the support arm device 5027, the position of the endoscope 5001 can be fixed more reliably without manual intervention, making it possible to obtain stable images of the surgical site and perform the surgery smoothly.

[0304] It should be noted that the arm control device 5045 does not necessarily have to be provided on the cart 5037. Furthermore, the arm control device 5045 does not necessarily have to be one device. For example, an arm control device 5045 may be provided on each of the joints 5033a to 5033c of the arm section 5031 of the support arm device 5027, and the drive control of the arm section 5031 may be realized by a plurality of arm control devices 5045 working together.

[0305] (Light source device) The light source device 5043 supplies the endoscope 5001 with illumination light for photographing the surgical site. The light source device 5043 is composed of a white light source formed, for example, of an LED, a laser light source, or a combination thereof. In this case, if the white light source is formed by a combination of RGB laser light sources, the output intensity and output timing of each color (each wavelength) can be controlled with high precision, and the light source device 5043 can adjust the white balance of the captured image. In this case, it is also possible to irradiate the object of observation with laser light from each of the RGB laser light sources in a time-division manner and control the drive of the image sensor of the camera head 5005 in synchronization with the irradiation timing, thereby capturing images corresponding to each of the RGB colors in a time-division manner. According to this method, a color image can be obtained without providing a color filter to the image sensor.

[0306] Furthermore, the light source device 5043 may be controlled to change the intensity of light it outputs at predetermined time intervals. By controlling the driving of the image sensor of the camera head 5005 in synchronization with the timing of the change in the light intensity to acquire images in a time-division manner and combining the images, it is possible to generate an image with a high dynamic range that is free from so-called blocked-up shadows and blown-out highlights.

[0307] The light source device 5043 may also be configured to supply light in a predetermined wavelength band corresponding to special light observation. Special light observation, for example, utilizes the wavelength dependence of light absorption in body tissues to irradiate light with a narrower band than the light irradiated during normal observation (i.e., white light), thereby capturing high-contrast images of specific tissues, such as blood vessels on the surface of mucous membranes, known as narrow-band imaging. Alternatively, special light observation may be performed using fluorescence observation, in which an image is obtained using fluorescence generated by irradiating excitation light. Fluorescence observation may involve irradiating excitation light onto a body tissue and observing the fluorescence from the body tissue (autofluorescence observation), or irradiating the body tissue with excitation light corresponding to the fluorescent wavelength of a reagent such as indocyanine green (ICG) to obtain a fluorescent image. The light source device 5043 may be configured to supply narrow-band light and / or excitation light corresponding to such special light observation.

[0308] (camera head and CCU) The functions of the camera head 5005 and the CCU 5039 of the endoscope 5001 will be described in more detail with reference to Fig. 67. Fig. 67 is a block diagram showing an example of the functional configuration of the camera head 5005 and the CCU 5039 shown in Fig. 66.

[0309] 67, the camera head 5005 has, as its functions, a lens unit 5007, an imaging unit 5009, a drive unit 5011, a communication unit 5013, and a camera head control unit 5015. The CCU 5039 has, as its functions, a communication unit 5059, an image processing unit 5061, and a control unit 5063. The camera head 5005 and the CCU 5039 are connected by a transmission cable 5065 to enable bidirectional communication.

[0310] First, the functional configuration of the camera head 5005 will be described. The lens unit 5007 is an optical system provided at the connection portion with the lens barrel 5003. Observation light taken in from the tip of the lens barrel 5003 is guided to the camera head 5005 and enters the lens unit 5007. The lens unit 5007 is configured by combining multiple lenses including a zoom lens and a focus lens. The optical characteristics of the lens unit 5007 are adjusted so as to focus the observation light on the light receiving surface of the image sensor of the imaging section 5009. In addition, the zoom lens and the focus lens are configured so that their positions on the optical axis can be moved to adjust the magnification and focus of the captured image.

[0311] The imaging unit 5009 is composed of an imaging element and is disposed after the lens unit 5007. Observation light passing through the lens unit 5007 is collected on the light receiving surface of the imaging element, and an image signal corresponding to the observed image is generated by photoelectric conversion. The image signal generated by the imaging unit 5009 is provided to the communication unit 5013.

[0312] The imaging element constituting the imaging unit 5009 is, for example, a CMOS (Complementary Metal Oxide Semiconductor) type image sensor having a Bayer array and capable of color imaging. The imaging element may be capable of capturing high-resolution images of, for example, 4K or higher. Obtaining high-resolution images of the surgical site allows the surgeon 5067 to grasp the state of the surgical site in more detail, enabling the surgery to proceed more smoothly.

[0313] Furthermore, the imaging element constituting the imaging unit 5009 is configured to have a pair of imaging elements for acquiring image signals for the right eye and the left eye corresponding to 3D display. 3D display enables the surgeon 5067 to more accurately grasp the depth of the biological tissue in the surgical site. When the imaging unit 5009 is configured as a multi-plate type, multiple lens units 5007 are also provided corresponding to the respective imaging elements.

[0314] Furthermore, the imaging unit 5009 does not necessarily have to be provided in the camera head 5005. For example, the imaging unit 5009 may be provided inside the lens barrel 5003, immediately after the objective lens.

[0315] The driving section 5011 is configured by an actuator, and moves the zoom lens and focus lens of the lens unit 5007 by a predetermined distance along the optical axis under the control of the camera head control section 5015. This allows the magnification and focus of the image captured by the imaging section 5009 to be adjusted appropriately.

[0316] The communication unit 5013 is configured with a communication device for transmitting and receiving various information to and from the CCU 5039. The communication unit 5013 transmits image signals obtained from the imaging unit 5009 as RAW data to the CCU 5039 via the transmission cable 5065. At this time, in order to display the captured image of the surgical site with low latency, it is preferable that the image signals be transmitted by optical communication. This is because, during surgery, the surgeon 5067 performs surgery while observing the condition of the affected area using the captured image, and for a safer and more reliable surgery, it is necessary that moving images of the surgical site be displayed as real-time as possible. When optical communication is performed, the communication unit 5013 is provided with a photoelectric conversion module that converts electrical signals into optical signals. The image signals are converted into optical signals by the photoelectric conversion module and then transmitted to the CCU 5039 via the transmission cable 5065.

[0317] The communication unit 5013 also receives control signals from the CCU 5039 for controlling the operation of the camera head 5005. The control signals include information related to imaging conditions, such as information specifying the frame rate of an image to be captured, information specifying an exposure value during imaging, and / or information specifying the magnification and focus of an image to be captured. The communication unit 5013 provides the received control signals to the camera head control unit 5015. The control signals from the CCU 5039 may also be transmitted by optical communication. In this case, the communication unit 5013 is provided with a photoelectric conversion module that converts optical signals into electrical signals, and the control signals are converted into electrical signals by the photoelectric conversion module and then provided to the camera head control unit 5015.

[0318] The image capturing conditions such as the frame rate, exposure value, magnification, and focus are automatically set by the control unit 5063 of the CCU 5039 based on the acquired image signal. That is, the endoscope 5001 is equipped with so-called AE (Auto Exposure) function, AF (Auto Focus) function, and AWB (Auto White Balance) function.

[0319] The camera head control unit 5015 controls the driving of the camera head 5005 based on a control signal received from the CCU 5039 via the communication unit 5013. For example, the camera head control unit 5015 controls the driving of the image sensor of the imaging unit 5009 based on information specifying the frame rate of the captured image and / or information specifying the exposure during image capture. Also, for example, the camera head control unit 5015 appropriately moves the zoom lens and focus lens of the lens unit 5007 via the drive unit 5011 based on information specifying the magnification and focus of the captured image. The camera head control unit 5015 may further have a function of storing information for identifying the lens barrel 5003 and the camera head 5005.

[0320] Incidentally, by arranging the components such as the lens unit 5007 and the imaging unit 5009 in a sealed structure that is highly airtight and waterproof, the camera head 5005 can be made resistant to autoclave sterilization.

[0321] Next, the functional configuration of the CCU 5039 will be described. The communication unit 5059 is configured by a communication device for transmitting and receiving various information to and from the camera head 5005. The communication unit 5059 receives an image signal transmitted from the camera head 5005 via the transmission cable 5065. At this time, as described above, the image signal may be preferably transmitted by optical communication. In this case, in order to support optical communication, the communication unit 5059 is provided with an optoelectric conversion module that converts an optical signal into an electrical signal. The communication unit 5059 provides the image signal converted into an electrical signal to the image processing unit 5061.

[0322] Furthermore, the communication unit 5059 transmits to the camera head 5005 a control signal for controlling the driving of the camera head 5005. This control signal may also be transmitted by optical communication.

[0323] The image processing unit 5061 performs various types of image processing on the image signal, which is RAW data transmitted from the camera head 5005. The image processing includes various known signal processing such as development processing, high image quality processing (band enhancement processing, super-resolution processing, NR (Noise Reduction) processing, and / or image stabilization processing, etc.), and / or enlargement processing (electronic zoom processing), etc. The image processing unit 5061 also performs detection processing on the image signal to perform AE, AF, and AWB.

[0324] The image processing unit 5061 is configured with a processor such as a CPU or GPU, and the processor operates according to a predetermined program to perform the image processing and detection processing described above. If the image processing unit 5061 is configured with multiple GPUs, the image processing unit 5061 divides information related to the image signal as appropriate, and performs image processing in parallel using these multiple GPUs.

[0325] The control unit 5063 performs various controls related to the imaging of the surgical site by the endoscope 5001 and the display of the captured image. For example, the control unit 5063 generates a control signal for controlling the driving of the camera head 5005. At this time, if the imaging conditions have been input by the user, the control unit 5063 generates the control signal based on the input by the user. Alternatively, if the endoscope 5001 is equipped with an AE function, an AF function, and an AWB function, the control unit 5063 appropriately calculates the optimal exposure value, focal length, and white balance according to the result of detection processing by the image processing unit 5061, and generates the control signal.

[0326] The control unit 5063 also displays an image of the surgical site on the display device 5041 based on the image signal processed by the image processing unit 5061. At this time, the control unit 5063 recognizes various objects in the surgical site image using various image recognition technologies. For example, the control unit 5063 can recognize surgical tools such as forceps, specific biological parts, bleeding, mist generated when using the energy treatment tool 5021, and the like by detecting the shape and color of the edges of objects included in the surgical site image. When displaying the image of the surgical site on the display device 5041, the control unit 5063 uses the recognition results to superimpose various surgical support information on the image of the surgical site. The superimposed surgical support information and its presentation to the surgeon 5067 enable the surgery to proceed more safely and reliably.

[0327] The transmission cable 5065 connecting the camera head 5005 and the CCU 5039 is an electric signal cable for communication of electric signals, an optical fiber for optical communication, or a composite cable of these.

[0328] In the illustrated example, communication is performed wired using the transmission cable 5065, but communication between the camera head 5005 and the CCU 5039 may be performed wirelessly. When communication between them is performed wirelessly, there is no need to lay the transmission cable 5065 in the operating room, which can eliminate the situation where the transmission cable 5065 interferes with the movement of medical staff in the operating room.

[0329] The above describes an example of an endoscopic surgery system 5000 to which the technology according to the present disclosure can be applied. Note that although the endoscopic surgery system 5000 has been described as an example here, systems to which the technology according to the present disclosure can be applied are not limited to this example. For example, the technology according to the present disclosure may be applied to a flexible endoscope system for inspection or a microsurgery system.

[0330] Of the configurations described above, the technology according to the present disclosure can be suitably applied to the imaging unit 5009. By applying the technology according to the present disclosure to the imaging unit 5009, the readout speed of image data can be increased, making it possible to perform surgery more safely and reliably.

[0331] 22. Application Example 2 Furthermore, the technology according to the present disclosure (the present technology) can be applied to various products. For example, the technology according to the present disclosure may be realized as a device mounted on any type of moving body, such as an automobile, an electric vehicle, a hybrid electric vehicle, a motorcycle, a bicycle, personal mobility, an airplane, a drone, a ship, or a robot.

[0332] FIG. 68 is a block diagram showing a schematic configuration example of a vehicle control system, which is an example of a mobile object control system to which the technology of the present disclosure can be applied.

[0333] The vehicle control system 12000 includes a plurality of electronic control units connected via a communication network 12001. In the example shown in Fig. 68, the vehicle control system 12000 includes a drive system control unit 12010, a body system control unit 12020, an outside-vehicle information detection unit 12030, an inside-vehicle information detection unit 12040, and an integrated control unit 12050. Also shown as functional components of the integrated control unit 12050 are a microcomputer 12051, an audio / video output unit 12052, and an in-vehicle network I / F (Interface) 12053.

[0334] The drivetrain control unit 12010 controls the operation of devices related to the drivetrain of the vehicle in accordance with various programs. For example, the drivetrain control unit 12010 functions as a control device for a drive force generating device for generating a drive force of the vehicle, such as an internal combustion engine or a drive motor, a drive force transmission mechanism for transmitting the drive force to the wheels, a steering mechanism for adjusting the steering angle of the vehicle, a braking device for generating a braking force of the vehicle, etc.

[0335] The body system control unit 12020 controls the operation of various devices equipped in the vehicle body according to various programs. For example, the body system control unit 12020 functions as a control device for a keyless entry system, a smart key system, a power window device, or various lamps such as headlamps, backup lamps, brake lamps, turn signals, and fog lamps. In this case, radio waves transmitted from a portable device that serves as a key or signals from various switches may be input to the body system control unit 12020. The body system control unit 12020 receives these radio waves or signals and controls the vehicle's door lock device, power window device, lamps, etc.

[0336] The outside-vehicle information detection unit 12030 detects information outside the vehicle equipped with the vehicle control system 12000. For example, an imaging unit 12031 is connected to the outside-vehicle information detection unit 12030. The outside-vehicle information detection unit 12030 causes the imaging unit 12031 to capture images outside the vehicle and receives the captured images. The outside-vehicle information detection unit 12030 may perform object detection processing or distance detection processing for people, cars, obstacles, signs, characters on the road surface, etc., based on the received images.

[0337] The imaging unit 12031 is an optical sensor that receives light and outputs an electrical signal according to the amount of light received. The imaging unit 12031 can output the electrical signal as an image, or as distance measurement information. The light received by the imaging unit 12031 may be visible light or invisible light such as infrared light.

[0338] The in-vehicle information detection unit 12040 detects information inside the vehicle. For example, a driver state detection unit 12041 that detects the state of the driver is connected to the in-vehicle information detection unit 12040. The driver state detection unit 12041 includes, for example, a camera that captures an image of the driver, and the in-vehicle information detection unit 12040 may calculate the degree of fatigue or concentration of the driver based on the detection information input from the driver state detection unit 12041, or may determine whether the driver is dozing off.

[0339] The microcomputer 12051 can calculate control target values ​​for the driving force generating device, steering mechanism, or braking device based on the information inside and outside the vehicle acquired by the outside-vehicle information detection unit 12030 or the inside-vehicle information detection unit 12040, and output control commands to the drivetrain control unit 12010. For example, the microcomputer 12051 can perform cooperative control aimed at realizing the functions of an ADAS (Advanced Driver Assistance System), including avoiding or mitigating collisions between vehicles, following based on the distance between vehicles, maintaining vehicle speed, warning of vehicle collisions, or warning of vehicle lane departure.

[0340] In addition, the microcomputer 12051 can perform cooperative control for the purpose of autonomous driving, which allows the vehicle to travel autonomously without relying on driver operation, by controlling the driving force generating device, steering mechanism, braking device, etc. based on information about the surroundings of the vehicle obtained by the outside vehicle information detection unit 12030 or the inside vehicle information detection unit 12040.

[0341] Furthermore, the microcomputer 12051 can output a control command to the body system control unit 12020 based on the information about the outside of the vehicle acquired by the outside information detection unit 12030. For example, the microcomputer 12051 can control the headlamps according to the position of a preceding vehicle or an oncoming vehicle detected by the outside information detection unit 12030, and perform cooperative control for the purpose of preventing glare, such as switching from high beams to low beams.

[0342] The audio / video output unit 12052 transmits at least one of audio and video output signals to an output device capable of visually or audibly notifying information to vehicle occupants or the outside of the vehicle. In the example of Fig. 68, an audio speaker 12061, a display unit 12062, and an instrument panel 12063 are exemplified as output devices. The display unit 12062 may include, for example, at least one of an on-board display and a head-up display.

[0343] FIG. 69 is a diagram showing an example of the installation position of the imaging unit 12031.

[0344] In FIG. 69, the imaging unit 12031 includes imaging units 12101, 12102, 12103, 12104, and 12105.

[0345] The imaging units 12101, 12102, 12103, 12104, and 12105 are provided, for example, at positions such as the front nose, side mirrors, rear bumper, back door, and the top of the windshield inside the vehicle cabin of the vehicle 12100. The imaging unit 12101 provided at the front nose and the imaging unit 12105 provided at the top of the windshield inside the vehicle cabin mainly acquire images of the front of the vehicle 12100. The imaging units 12102 and 12103 provided at the side mirrors mainly acquire images of the sides of the vehicle 12100. The imaging unit 12104 provided at the rear bumper or back door mainly acquires images of the rear of the vehicle 12100. The imaging unit 12105 provided at the top of the windshield inside the vehicle cabin is mainly used to detect preceding vehicles, pedestrians, obstacles, traffic lights, traffic signs, lanes, etc.

[0346] 69 shows an example of the imaging ranges of the imaging units 12101 to 12104. Imaging range 12111 indicates the imaging range of the imaging unit 12101 provided on the front nose, imaging ranges 12112 and 12113 indicate the imaging ranges of the imaging units 12102 and 12103 provided on the side mirrors, respectively, and imaging range 12114 indicates the imaging range of the imaging unit 12104 provided on the rear bumper or back door. For example, by overlaying the image data captured by the imaging units 12101 to 12104, a bird's-eye view image of the vehicle 12100 viewed from above can be obtained.

[0347] At least one of the imaging units 12101 to 12104 may have a function of acquiring distance information. For example, at least one of the imaging units 12101 to 12104 may be a stereo camera made up of multiple imaging elements, or may be an imaging element having pixels for phase difference detection.

[0348] For example, the microcomputer 12051 can calculate the distance to each three-dimensional object within the imaging ranges 12111 to 12114 and the change in this distance over time (relative speed with respect to the vehicle 12100) based on the distance information obtained from the imaging units 12101 to 12104, thereby extracting as a preceding vehicle, in particular, the three-dimensional object that is the closest three-dimensional object on the path of the vehicle 12100 and traveling in approximately the same direction as the vehicle 12100 at a predetermined speed (for example, 0 km / h or higher). Furthermore, the microcomputer 12051 can set a vehicle-to-vehicle distance to be maintained in advance in front of the preceding vehicle, and perform automatic braking control (including follow-up stop control), automatic acceleration control (including follow-up start control), etc. In this way, cooperative control can be performed for the purpose of automatic driving, which runs autonomously without relying on driver operation.

[0349] For example, the microcomputer 12051 classifies and extracts three-dimensional object data regarding three-dimensional objects into two-wheeled vehicles, ordinary vehicles, large vehicles, pedestrians, utility poles, and other three-dimensional objects based on distance information obtained from the imaging units 12101 to 12104, and can use the data for automatic obstacle avoidance. For example, the microcomputer 12051 distinguishes obstacles around the vehicle 12100 into obstacles that are visible to the driver of the vehicle 12100 and obstacles that are difficult to see. The microcomputer 12051 then determines the collision risk, which indicates the degree of risk of collision with each obstacle, and when the collision risk is equal to or greater than a set value and a collision is possible, the microcomputer 12051 can provide driving assistance for collision avoidance by outputting an alarm to the driver via the audio speaker 12061 or the display unit 12062, or by performing forced deceleration or avoidance steering via the drivetrain control unit 12010.

[0350] At least one of the image capturing units 12101 to 12104 may be an infrared camera that detects infrared rays. For example, the microcomputer 12051 can recognize a pedestrian by determining whether or not a pedestrian is present in the images captured by the image capturing units 12101 to 12104. The pedestrian recognition is performed, for example, by extracting feature points from the images captured by the image capturing units 12101 to 12104, which are infrared cameras, and then performing pattern matching on a series of feature points that indicate the outline of an object to determine whether or not the object is a pedestrian. When the microcomputer 12051 determines that a pedestrian is present in the images captured by the image capturing units 12101 to 12104 and recognizes the pedestrian, the audio / image output unit 12052 controls the display unit 12062 to superimpose a rectangular outline on the recognized pedestrian for emphasis. The audio / image output unit 12052 may also control the display unit 12062 to display an icon or the like indicating the pedestrian at a desired position.

[0351] The above describes an example of a vehicle control system to which the technology according to the present disclosure can be applied. Of the above-described configurations, the technology according to the present disclosure can be applied to the imaging unit 12031, the outside vehicle information detection unit 12030, the inside vehicle information detection unit 12040, the driver state detection unit 12041, etc. By applying the technology according to the present disclosure to these, the read speed of image data can be increased, thereby providing effects such as more optimal support for the driver's driving.

[0352] Although the embodiments of the present disclosure have been described above, the technical scope of the present disclosure is not limited to the above-described embodiments, and various modifications are possible within the scope of the gist of the present disclosure. Furthermore, components of different embodiments and modifications may be combined as appropriate.

[0353] Furthermore, the effects of each embodiment described in this specification are merely examples and are not intended to be limiting, and other effects may also be obtained.

[0354] The present technology can also be configured as follows. (1) A solid-state imaging device including a plurality of photoelectric conversion elements arranged in a matrix, Each of the photoelectric conversion elements is a first electrode and a second electrode arranged such that their main planes face each other; a photoelectric conversion film disposed between the first electrode and the second electrode; a semiconductor layer disposed between the photoelectric conversion film and the second electrode, the semiconductor layer having a first surface in contact with the photoelectric conversion film and at least a portion of a second surface opposite to the first surface in contact with the second electrode; an insulating film disposed within the semiconductor layer; a third electrode disposed within the insulating film; A solid-state imaging device comprising: (2) The third electrode has a plurality of openings, A portion of the semiconductor layer extends into each of the openings. The solid-state imaging device according to (1) above. (3) The solid-state imaging device described in (1) or (2), wherein the thickness of the insulating film between the third electrode and the second electrode is thinner than the thickness of the insulating film between the third electrode and the first electrode. (4) A solid-state imaging device according to any one of (1) to (3), wherein the thickness of the insulating film located on the sidewall side of the third electrode in a direction parallel to the main plane is thinner than the thickness of the insulating film between the third electrode and the first electrode. (5) A solid-state imaging device according to any one of (1) to (4), wherein the thickness of the insulating film located on the sidewall of the third electrode in a direction parallel to the main plane becomes thinner from the upper side to the lower side of the third electrode. (6) The solid-state imaging device according to any one of (1) to (5), wherein each of the photoelectric conversion elements further includes a fourth electrode disposed within the insulating film between the third electrode and the first electrode. (7) The solid-state imaging device described in (6), wherein the thickness of the insulating film located on the side wall side of the third electrode in a direction parallel to the main plane is thinner than the thickness of the insulating film located on the side wall side of the fourth electrode. (8) The solid-state imaging device according to any one of (1) to (7), wherein the second electrode is divided into a plurality of electrodes that face the first electrode in different regions. (9) The solid-state imaging device according to any one of (1) to (8), wherein the width of the second electrode in a direction parallel to the main plane is narrower than the width of the third electrode in a direction parallel to the main plane. (10) The solid-state imaging device according to any one of (1) to (9), wherein the width of the semiconductor layer in a direction parallel to the main plane becomes thinner from the first electrode side toward the second electrode side. (11) The solid-state imaging device according to any one of (1) to (10), wherein the third electrodes include a plurality of fifth electrodes arranged in a direction perpendicular to the main plane. (12) The solid-state imaging device according to any one of (1) to (11), wherein the third electrode is divided into a plurality of regions in a direction perpendicular to the main surface. (13) The solid-state imaging device according to any one of (1) to (12), wherein a part of a surface of the photoelectric conversion film facing the second electrode protrudes toward the second electrode. (14) The solid-state imaging device according to (13), wherein a part of a surface of the first electrode facing the second electrode protrudes toward the second electrode. (15) The solid-state imaging device according to any one of (1) to (14), wherein the composition of the semiconductor layer in a direction perpendicular to the major surface varies depending on the distance from the second electrode. (16) an on-chip lens disposed on the opposite side of the first electrode from the second electrode; a color filter that is disposed in a direction perpendicular to the main plane relative to the on-chip lens and transmits light of a predetermined wavelength; The solid-state imaging device according to any one of (1) to (15) above, further comprising: (17) The solid-state imaging device according to any one of (1) to (16), wherein the photoelectric conversion film and at least a part of the semiconductor layer contain the same material. (18) The solid-state imaging device according to any one of (1) to (17), further comprising a plurality of the photoelectric conversion elements arranged in a direction perpendicular to the main plane. (19) The solid-state imaging device according to any one of (1) to (18), wherein the photoelectric conversion film is an organic film. (20) a solid-state imaging device; an optical system that forms an image of incident light on a light receiving surface of the solid-state imaging device; a processor that controls the solid-state imaging device; Equipped with the solid-state imaging device includes a plurality of photoelectric conversion elements arranged in a matrix; Each of the photoelectric conversion elements is a first electrode and a second electrode arranged such that their main planes face each other; a photoelectric conversion film disposed between the first electrode and the second electrode; a semiconductor layer disposed between the photoelectric conversion film and the second electrode, the semiconductor layer having a first surface in contact with the photoelectric conversion film and at least a portion of a second surface opposite to the first surface in contact with the second electrode; an insulating film disposed within the semiconductor layer; a third electrode disposed within the insulating film; An electronic device comprising: (twenty one) forming a first insulating film on a first surface of a semiconductor substrate; forming a read electrode in a first region on the first insulating film; forming a second insulating film on the first electrode; forming a first transparent electrode material film on the second insulating film; forming a third insulating film on the first transparent electrode material film; forming a second transparent electrode material film on the third insulating film; forming a fourth insulating film on the second transparent electrode material film; forming an opening in the second to fourth insulating films and the first and second transparent electrode material films to expose a part of the read electrode; forming a semiconductor layer on the fourth insulating film and in the opening; forming a photoelectric conversion film on the semiconductor layer; forming a common electrode on the photoelectric conversion film; A method for manufacturing a solid-state imaging device comprising: (twenty two) A solid-state imaging device including a plurality of photoelectric conversion elements arranged in a matrix, Each of the photoelectric conversion elements is a first electrode and a second electrode arranged such that their main planes face each other; a photoelectric conversion film disposed between the first electrode and the second electrode; a semiconductor layer disposed between the photoelectric conversion film and the second electrode, the semiconductor layer having a first surface in contact with the photoelectric conversion film and a second surface opposite to the first surface in contact with the second electrode; a first insulating film disposed within the semiconductor layer; a third electrode disposed within the first insulating film; A solid-state imaging device comprising: (twenty three) The third electrode has a plurality of openings, A portion of the semiconductor layer extends into each of the openings. The solid-state imaging device according to (22) above. (twenty four) The solid-state imaging device described in (22) or (23), wherein the thickness of the first insulating film between the third electrode and the second electrode is thinner than the thickness of the first insulating film between the third electrode and the first electrode. (twenty five) The solid-state imaging device described in any one of (22) to (24), wherein the thickness of the first insulating film located on the sidewall side of the third electrode in a direction parallel to the main plane is thinner than the thickness of the first insulating film between the third electrode and the first electrode. (26) The solid-state imaging device according to any one of (22) to (25), wherein the thickness of the first insulating film located on the sidewall of the third electrode in a direction parallel to the main plane becomes thinner from the upper side to the lower side of the third electrode. (27) The solid-state imaging device according to any one of (22) to (26), wherein the second electrode is divided into a plurality of electrodes that face the first electrode in different regions. (28) The solid-state imaging device according to any one of (22) to (27), wherein the width of the second electrode in a direction parallel to the main plane is narrower than the width of the third electrode in a direction parallel to the main plane. (29) The solid-state imaging device according to any one of (22) to (28), wherein the width of the semiconductor layer in a direction parallel to the main plane becomes thinner from the first electrode side toward the second electrode side. (30) a second insulating film disposed between the third electrode and the second electrode in a region in contact with the second electrode; a fourth electrode disposed in the second insulating film; The solid-state imaging device according to any one of (22) to (29) above, further comprising: (31) at least a part of the surface of the semiconductor layer on the second electrode side is an inclined region inclined with respect to the main plane, a fifth electrode disposed outside the semiconductor layer and adjacent to the sloped region; The solid-state imaging device according to (29) above. (32) The solid-state imaging device according to any one of (22) to (31), wherein the third electrodes include a plurality of fifth electrodes arranged in a direction perpendicular to the main plane. (33) The solid-state imaging device according to any one of (22) to (32), wherein the third electrode is divided into a plurality of regions in a direction perpendicular to the main surface. (34) The solid-state imaging device according to any one of (22) to (33), wherein a part of a surface of the photoelectric conversion film facing the second electrode protrudes toward the second electrode. (35) The solid-state imaging device according to (34), wherein a part of a surface of the first electrode facing the second electrode protrudes toward the second electrode. (36) The solid-state imaging device according to any one of (22) to (35), wherein the composition of the semiconductor layer in a direction perpendicular to the major surface varies depending on the distance from the second electrode. (37) an on-chip lens disposed on the opposite side of the first electrode from the second electrode; a color filter that is disposed in a direction perpendicular to the main plane relative to the on-chip lens and transmits light of a predetermined wavelength; The solid-state imaging device according to any one of (22) to (36) above, further comprising: (38) The solid-state imaging device according to any one of (22) to (37), wherein the photoelectric conversion film and at least a part of the semiconductor layer contain the same material. (39) The solid-state imaging device according to any one of (22) to (38), further comprising a plurality of the photoelectric conversion elements arranged in a direction perpendicular to the main plane. (40) The solid-state imaging device according to any one of (22) to (39), wherein the photoelectric conversion film is an organic film. (41) a solid-state imaging device; an optical system that forms an image of incident light on a light receiving surface of the solid-state imaging device; a processor that controls the solid-state imaging device; Equipped with the solid-state imaging device includes a plurality of photoelectric conversion elements arranged in a matrix; Each of the photoelectric conversion elements is a first electrode and a second electrode arranged such that their main planes face each other; a photoelectric conversion film disposed between the first electrode and the second electrode; a semiconductor layer disposed between the photoelectric conversion film and the second electrode, the semiconductor layer having a first surface in contact with the photoelectric conversion film and a second surface opposite to the first surface in contact with the second electrode; a first insulating film disposed within the semiconductor layer; a third electrode disposed within the first insulating film; An electronic device comprising: (42) forming a first insulating film on a first surface of a semiconductor substrate; forming a read electrode in a first region on the first insulating film; forming a first semiconductor layer on the read electrode; forming a second insulating film on the first semiconductor layer; forming a transparent electrode material film on the second insulating film; forming a third insulating film on the transparent electrode material film; forming an opening in the second and third insulating films and the transparent electrode material film to expose a portion of the read electrode; forming a fourth insulating film that covers the third insulating film and the inside of the opening; forming a second semiconductor layer on the fourth insulating film on the third insulating film and on the fourth insulating film in the opening; forming a photoelectric conversion film on the second semiconductor layer; forming a common electrode on the photoelectric conversion film; A method for manufacturing a solid-state imaging device comprising: [Explanation of symbols]

[0355] 100 Solid-state imaging device (image sensor) 101 Semiconductor substrate 102, 104 P-type semiconductor region 103, 105 N-type semiconductor region 106 insulating film 111 Insulating layer 112, 1612 common electrode 113, 1613 Photoelectric conversion film 114, 114A, 514, 524, 914, 1514, 1514a, 1514b, 1514c Semiconductor layer 114A convex part 115, 215, 615, 715A, 715B, 815A, 815B, 2015 Storage electrode 115A, 315A transparent electrode material film 116, 116A, 116B, 116C, 216, 316, 316A, 316B, 316C, 516 insulating film 117, 417, 517, 617A, 617B, 817A, 817B, 2014 Readout electrode 118, 122 Wiring 119 Through electrode 120 Accumulated Charge 121 Wiring layer 131 Protective film 132 Planarization film 133 On-chip lens 315 Shield Electrode 515 Collection electrode 525 Modulation Electrode 615A, 615B area 1116, 2016 Memory electrode 1833 Color Filter 3000 electronic equipment 3020 imaging lens 3030 Storage section 3040 processor 3101 Pixel array section 3102 Vertical drive circuit 3102A Voltage application circuit 3103, 3103A, 3103B Column Processing Circuit 3104 Horizontal drive circuit 3105 System Control Unit 3108 Signal Processing Unit 3109 Data Storage Unit 3110 unit pixel 3110B, 3110G, 3110R pixels 3121 Photodetector chip 3122 Circuit Chip A1, A2, A3, A4 opening AMP1, AMP2, AMP3 Amplifying transistors FD1, FD2, FD3 Floating diffusion regions LD pixel drive line PD1, PD2 photodiodes PD3, PD203 organic photoelectric conversion elements RST1, RST2, RST3 reset transistors S1, S2 system SEL1, SEL2, SEL3 select transistors TRG1, TRG2 transfer transistors VSL vertical signal line

Claims

1. A first electrode; A second electrode; a photoelectric conversion film provided between the first electrode and the second electrode; a semiconductor layer provided between the photoelectric conversion film and the second electrode; a third electrode provided between the photoelectric conversion film and the second electrode; a fourth electrode provided between the photoelectric conversion film and the third electrode; Equipped with the second electrode is electrically connected to the semiconductor layer; the third electrode and the fourth electrode are electrically insulated from the semiconductor layer and are also electrically insulated from the photoelectric conversion film; Light detection device.

2. An optical detection device as described in claim 1, wherein the fourth electrode is electrically insulated from the third electrode.

3. surfaces of the third electrode and the fourth electrode are covered with an insulating film; 3. The photodetector according to claim 1 or 2.

4. a first surface of the semiconductor layer in contact with the photoelectric conversion film; At least a part of a second surface of the semiconductor layer located on the opposite side to the first surface is in contact with the second electrode. The photodetector according to claim 3 .

5. The third electrode has a plurality of openings, A portion of the semiconductor layer extends into each of the openings.

5. The photodetector according to claim 4.

6. the first electrode and the second electrode are arranged such that their main planes face each other, a thickness of the insulating film located on a sidewall side of the third electrode in a direction parallel to the main plane is thinner than a thickness of the insulating film located between the third electrode and the first electrode; The photodetector according to any one of claims 3 to 5.

7. a thickness of the insulating film located on a sidewall side of the third electrode in a direction parallel to the main plane is thinner than a thickness of the insulating film located on a sidewall side of the fourth electrode; 7. The photodetector according to claim 6.

8. 8. The photodetector according to claim 1, further comprising an on-chip lens disposed on the opposite side of the first electrode from the second electrode.

9. 9. The photodetector according to claim 1, wherein the photoelectric conversion film and at least a part of the semiconductor layer contain the same material.

10. 10. The photodetector according to claim 1, wherein the photoelectric conversion film is an organic film.

11. The light detection device according to any one of claims 1 to 10, which is an imaging device or a distance measuring device.

12. a photodetector; an optical system that forms an image of incident light on a light receiving surface of the photodetector; a processor for controlling the light detection device; An electronic device comprising: The photodetector device A first electrode; A second electrode; a photoelectric conversion film provided between the first electrode and the second electrode; a semiconductor layer provided between the photoelectric conversion film and the second electrode; a third electrode provided between the photoelectric conversion film and the second electrode; a fourth electrode provided between the photoelectric conversion film and the third electrode; and the second electrode is electrically connected to the semiconductor layer; the third electrode and the fourth electrode are electrically insulated from the semiconductor layer and are also electrically insulated from the photoelectric conversion film; electronic equipment.

Images