Ignition control method, film formation method and film formation apparatus

Abstract

To provide a technique which can perform a more stable plasma ignition.SOLUTION: An ignition control method executed in a film formation device including: a processing container that houses a substrate; a plasma box that is formed in the processing container; a pair of electrodes that are arranged so as to nip the plasma box; and a RF power supply that is connected to the pair of electrodes via a matching box having a variable capacitor, and the method includes: a step (a) of setting a process type for specifying a processing condition of the substrate; a step (b) of measuring first information indicating a voltage between the electrodes against each of a plurality of adjustment positions of the variable capacitor when applying a high frequency voltage of a first frequency to the pair of electrodes from the RF power supply in each process type; a step (c) of determining a preset value of the variable capacitor on the basis of the measured first information; and a step (d) of setting an initial position of the adjustment position of the variable capacitor to the determined preset value.SELECTED DRAWING: Figure 7

Description

[Technical Field]

[0001] The present disclosure relates to an ignition control method, a film formation method, and a film formation apparatus. [Background technology]

[0002] For example, Patent Document 1 discloses a batch-type film formation apparatus that accommodates multiple substrates in a processing chamber and forms nitride films on the multiple substrates using the ALD (Atomic Layer Deposition) method. The film formation method in Patent Document 1 includes a step of supplying a silicon-containing source gas, a step of supplying hydrogen gas activated by plasma, a step of supplying a thermally activated nitriding gas to nitride the silicon element, a step of supplying a plasma activated nitriding gas to nitride the silicon element, and a step of supplying a purge gas between each step. This allows the formation of a silicon nitride film with a desired film thickness distribution.

[0003] For example, Patent Document 2 discloses an electronic matcher that does not include any mechanical elements and is capable of performing impedance matching at high speed. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Japanese Patent Publication No. 2020-161722 [Patent Document 2] Japanese Patent Application Publication No. 2017-118434 Summary of the Invention [Problem to be solved by the invention]

[0005] The present disclosure provides a technique that enables more stable plasma ignition. [Means for solving the problem]

[0006] According to one aspect of the present disclosure, there is provided an ignition control method performed in a film formation apparatus having a processing vessel that accommodates a substrate, a plasma box formed in the processing vessel, a pair of electrodes arranged to sandwich the plasma box, and an RF power supply connected to the pair of electrodes via a matching box having a variable capacitor, the ignition control method including: (a) setting a process type that specifies processing conditions for the substrate; (b) measuring, for each process type, first information that indicates a voltage between the electrodes for each of a plurality of adjustment positions of the variable capacitor when a high-frequency voltage of a first frequency is applied from the RF power supply to the pair of electrodes; (c) determining a preset value of the variable capacitor based on the measured first information; and (d) setting an initial position of the adjustment position of the variable capacitor to the determined preset value. [Effects of the Invention]

[0007] According to one aspect, more stable plasma ignition can be performed. [Brief explanation of the drawings]

[0008] [Figure 1] FIG. 1 is a diagram showing an example of the configuration of a film forming apparatus according to an embodiment. [Figure 2] 2A and 2B are diagrams showing the configuration of an electronic matcher and a plasma box according to an embodiment; [Figure 3] FIG. 2 is an explanatory diagram of a gas supply source and a control unit of the film forming apparatus according to the embodiment. [Figure 4] A diagram showing the Paschen curve. [Figure 5] 10 is an example table showing the interelectrode voltage at each adjustment position of the variable capacitor when 13.56 MHz RF is applied. [Figure 6] FIG. 4 is a diagram showing an example of setting information such as preset values ​​for each process type according to the embodiment. [Figure 7] 3 is a flowchart showing an ignition control method according to the embodiment. [Figure 8] 1 is a flowchart showing a film forming method according to an embodiment. [Figure 9]3 is a time chart showing a film forming method according to an embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0009] Hereinafter, embodiments of the present disclosure will be described with reference to the drawings. In the drawings, the same components are denoted by the same reference numerals, and redundant explanations may be omitted.

[0010] In this specification, deviations in directions such as parallel, right angles, orthogonal, horizontal, vertical, up / down, left / right, etc. are permitted to the extent that they do not impair the effects of the embodiments. The shape of the corners is not limited to right angles and may be rounded like an arch. Parallel, right angles, orthogonal, horizontal, vertical, circular, and coincident may also include approximately parallel, approximately right angles, approximately orthogonal, approximately horizontal, approximately vertical, approximately circular, and approximately coincident.

[0011] [Film forming equipment] First, a film formation apparatus 10 according to this embodiment will be described with reference to FIG. 1. FIG. 1 is a diagram showing the film formation apparatus 10 according to this embodiment. The film formation apparatus 10 accommodates a plurality of wafers in a processing chamber 11 and forms a predetermined film, such as a nitride film, on the plurality of wafers by an ALD (Atomic Layer Deposition) method. The film formation apparatus 10 is an example of an apparatus that performs this film formation method.

[0012] The film formation apparatus 10 is a batch-type vertical heat treatment apparatus that processes multiple wafers. However, the film formation apparatus 10 is not limited to such a heat treatment apparatus. For example, the film formation apparatus 10 may be a single-wafer type apparatus that processes wafers one by one. The film formation apparatus 10 may also be a semi-batch type apparatus. The semi-batch type apparatus may be an apparatus in which multiple wafers arranged around the rotation center line of a turntable are rotated together with the turntable and pass through multiple regions to which different gases are supplied in sequence.

[0013] The predetermined film is, for example, a silicon nitride film (SiN), but is not limited thereto. The silicon nitride film formed by the film formation method performed by the film formation apparatus 10 according to this embodiment is formed on the wafer by alternately supplying plasma of a source gas (e.g., dichlorosilane gas) and a nitriding gas (e.g., ammonia (NH3) gas) to the wafer. In this film formation method, the thickness of the nitride film formed within the wafer surface tends to be thicker at the wafer edge. To suppress this, there is a method of suppressing the film thickness at the wafer edge by supplying plasma of nitrogen (N2) gas before the step of supplying plasma of ammonia gas.

[0014] In film formation using plasma, higher film quality and control of film thickness are required, and a variety of gases are now being used to generate plasma, from plasma processing using a single gas to plasma processing using multiple gases.

[0015] The minimum ignition voltage of each gas varies depending on the gas used, as is known from the Paschen's curve. Therefore, the minimum ignition voltage required for plasma ignition varies depending on the gas used. Therefore, stable plasma ignition without reflected waves is required for each gas. Furthermore, stable plasma ignition that can cope with temperature changes caused by plasma, the effects of reaction products generated during film formation, and the effects of periodic cleaning of the process chamber to remove the reaction products is also desired. Therefore, the film formation method according to this embodiment provides technology that enables more stable plasma ignition and matching operations.

[0016] The film forming apparatus 10 includes a processing vessel 11 that accommodates wafers 2 and forms an internal space in which the wafers 2 are processed, a lid 20 that airtightly closes an opening at the bottom of the processing vessel 11, and a substrate holder 30 that holds the wafers 2. The wafers 2 are, for example, semiconductor substrates, and more specifically, silicon wafers. The substrate holder 30 is also called a wafer boat.

[0017] The processing vessel 11 has a cylindrical processing vessel body 12 with a ceiling and an open bottom end. The processing vessel body 12 is made of, for example, quartz. A flange portion 13 is formed at the bottom end of the processing vessel body 12. The processing vessel 11 also has, for example, a cylindrical manifold 14. The manifold 14 is made of, for example, stainless steel. A flange portion 15 is formed at the top end of the manifold 14, and the flange portion 13 of the processing vessel body 12 is installed on the flange portion 15. A seal member 16, such as an O-ring, is arranged between the flange portion 15 and the flange portion 13.

[0018] The lid 20 is airtightly attached to the opening at the lower end of the manifold 14 via a sealing member 21 such as an O-ring. The lid 20 is made of, for example, stainless steel. A through-hole that passes vertically through the lid 20 is formed in the center of the lid 20. A rotating shaft 24 is disposed in the through-hole. The gap between the lid 20 and the rotating shaft 24 is sealed by a magnetic fluid sealing unit 23. The lower end of the rotating shaft 24 is rotatably supported by an arm 26 of an elevating unit 25. A rotating plate 27 is provided on the upper end of the rotating shaft 24. A substrate holder 30 is placed on the rotating plate 27 via a heat retention table 28.

[0019] Substrate holder 30 holds multiple wafers 2 at intervals in the vertical direction. Each of the multiple wafers 2 is held horizontally. Substrate holder 30 is formed of, for example, quartz (SiO2) or silicon carbide (SiC). When lifting unit 25 is raised, lid 20 and substrate holder 30 are raised, and substrate holder 30 is carried into processing vessel 11, and the opening at the bottom of processing vessel 11 is sealed with lid 20. When lifting unit 25 is lowered, lid 20 and substrate holder 30 are lowered, and substrate holder 30 is carried out to the outside of processing vessel 11. When rotating shaft 24, substrate holder 30 rotates together with rotating plate 27.

[0020] The film forming apparatus 10 has three gas supply pipes 40A, 40B, and 40C. The gas supply pipes 40A, 40B, and 40C are made of, for example, quartz (SiO2). The gas supply pipes 40A, 40B, and 40C supply gases into the processing chamber 11. The types of gases will be described later. Note that one gas supply pipe may discharge one type of gas or multiple types of gases in sequence. Also, multiple gas supply pipes may discharge the same type of gas.

[0021] The gas supply pipes 40A, 40B, and 40C include horizontal pipes 43A, 43B, and 43C that penetrate the manifold 14 horizontally, and vertical pipes 41A, 41B, and 41C that are vertically disposed inside the processing vessel 11. The vertical pipes 41A, 41B, and 41C have multiple gas inlets 42A, 42B, and 42C that are spaced apart in the vertical direction. Gases supplied to the horizontal pipes 43A, 43B, and 43C are sent to the vertical pipes 41A, 41B, and 41C and are horizontally discharged from the multiple gas inlets 42A, 42B, and 42C. The vertical pipe 41C is disposed inside the plasma box 19. The vertical pipes 41A and 41B are disposed inside the processing vessel 11.

[0022] The film forming apparatus 10 has an exhaust pipe 45. The exhaust pipe 45 is connected to an exhaust device (not shown). The exhaust device includes a vacuum pump and exhausts the inside of the processing vessel 11. An exhaust port 18 is formed in the processing vessel body 12. The exhaust port 18 is positioned opposite the gas inlets 42A, 42B, and 42C. Gases discharged horizontally from the gas inlets 42A, 42B, and 42C pass through the exhaust port 18 and are then exhausted from the exhaust pipe 45. The exhaust device sucks gases from inside the processing vessel 11 and sends them to a detoxification device. The detoxification device removes harmful components from the exhaust gas and then releases the exhaust gas into the atmosphere.

[0023] The film forming apparatus 10 further includes a heating unit 60. The heating unit 60 is disposed outside the processing vessel 11 and heats the inside of the processing vessel 11 from the outside. For example, the heating unit 60 is formed in a cylindrical shape so as to surround the processing vessel body 12. The heating unit 60 is formed, for example, by an electric heater. The heating unit 60 heats the inside of the processing vessel 11, thereby improving the processing capacity of the gas supplied into the processing vessel 11.

[0024] [Plasma Box] 2 is a diagram showing the configuration of the electron matcher 53 and the plasma box 19 according to the embodiment. As shown in FIGS. 1 and 2, an opening 17 is formed in a part of the circumference of the processing vessel body 12. The plasma box 19 is formed on the side surface of the processing vessel 11 so as to surround the opening 17. The plasma box 19 is formed to protrude radially outward from the processing vessel body 12 and is formed, for example, in a substantially U-shape when viewed vertically.

[0025] A pair of electrodes (electrode pair) 91, 92 are arranged on either side of the plasma box 19. The electrodes 91, 92 are a pair of parallel electrodes installed facing each other on the outside of the plasma box 19. Similar to the vertical tube 41C, the electrodes 91, 92 are formed to be elongated in the vertical direction and facing each other. The electrodes 91, 92 are connected to an RF power supply 55 via an electronic matcher 53, and a high-frequency voltage is applied from the RF power supply 55.

[0026] The electronic matcher 53 is connected in series between the RF power supply 55 and the electrodes 91 and 92 via voltage supply lines 51, 52, and 54. The electronic matcher 53 includes a first variable capacitor 57 (capacitive element C1), a second variable capacitor 58 (capacitive element C2), and coils L1 and L2.

[0027] When RF power is supplied from the RF power source 55 to the load side (plasma box 19 side), the electronic matcher 53 matches the impedance between the RF power source 55 and the load, thereby increasing the efficiency of supplying RF power.

[0028] The stability of plasma ignition can be improved by achieving a fast response and short convergence time from when the plasma is excited to when it stabilizes. Furthermore, the stability of plasma ignition can be achieved by stabilizing the RF power to the plasma and suppressing plasma fluctuations. To achieve this, it is necessary to perform impedance matching quickly and suppress reflected waves.

[0029] In a matching device that includes a mechanical element, impedance matching is performed between the RF power supply 55 and the load by mechanically driving a variable capacitor with a motor, and it may take several seconds for impedance matching to be completed.

[0030] In the film formation method according to this embodiment, impedance matching is performed using an electronic matcher 53 that does not include any mechanical elements. That is, the change in the output terminal voltage (voltage between electrodes 91 and 92, hereinafter also referred to as inter-electrode voltage) of the electronic matcher 53 due to the change in impedance is detected in a short time (for example, within one second) immediately before plasma ignition, and an inter-electrode voltage with a margin greater than or equal to the value required for plasma ignition is applied. This provides a technology that suppresses reflected waves and enables more stable plasma ignition and matching operations.

[0031] The electronic matcher 53 is a matching box having a variable capacitor. The variable capacitor uses a variable capacitance diode consisting of a control line that applies a control voltage and a main line that carries an RF current, and can be adapted to a variable capacitor that changes the thickness of the depletion layer depending on the control line that applies the control voltage, making it possible to vary the capacitance of the capacitor.

[0032] In this embodiment, an electronic matcher 53 is used that uses a first variable capacitor 57 (capacitance element C1) and a second variable capacitor 58 (capacitance element C2) as an example of a variable capacitor. However, the variable inductors of coils L1 and L2 may be used as variable reactors instead of the variable capacitors. Also, a variable inductance circuit may be used in which an AC winding and a control winding are wound around a magnetic core, and when a DC current is passed through the control winding, the inductance of the AC winding changes due to the nonlinear magnetic characteristics of the magnetic material.

[0033] The control unit 100 shown in FIG. 1 uses the electronic matcher 53 to change the adjustment positions of the first variable capacitor 57 and the second variable capacitor 58 using an ignition control method described below. This adjusts the capacitance elements C1 and C2 of the first variable capacitor 57 and the second variable capacitor 58, respectively. The electronic matcher 53 adjusts its own impedance, thereby matching the output impedance of the RF power supply 55 with the load impedance. The electronic matcher 53 is provided with a sensor 56 that measures the inter-electrode voltage (the voltage across the distance D1 in FIG. 2). The adjustment positions of the first variable capacitor 57 and the second variable capacitor 58 are hereinafter also referred to as the adjustment positions of the capacitance elements C1 and C2. The initial adjustment positions of the first variable capacitor 57 and the second variable capacitor 58 are hereinafter also referred to as the initial positions of the capacitance elements C1 and C2.

[0034] [Gas supply] The plasma box 19 accommodates a vertical pipe 41C for the modifying gas and the nitriding gas. The modifying gas is discharged horizontally from an inlet port 42C of the vertical pipe 41C toward the opening 17 and is supplied into the processing vessel body 12 through the opening 17. Similarly, the nitriding gas is discharged horizontally from the inlet port 42C of the vertical pipe 41C toward the opening 17 and is supplied into the processing vessel body 12 through the opening 17.

[0035] The vertical pipes 41A and 41B for the raw material gas are arranged outside the plasma box 19, outside the opening 17 inside the processing vessel body 12. Note that the vertical pipe 41B for the nitriding gas may be arranged inside the plasma box 19, and each gas may be supplied separately from the vertical pipe 41C for the modifying gas.

[0036] By applying a high-frequency voltage between the electrodes 91 and 92, a high-frequency electric field is applied to the internal space of the plasma box 19. The modifying gas is converted into plasma by the high-frequency electric field in the internal space of the plasma box 19. If the modifying gas contains nitrogen gas, the nitrogen gas is converted into plasma, and nitrogen radicals are generated. If the modifying gas contains hydrogen gas, the hydrogen gas is converted into plasma, and hydrogen radicals are generated. If the modifying gas contains ammonia gas, the ammonia gas is converted into plasma, and ammonia radicals are generated. These active species are supplied into the processing vessel body 12 through the opening 17 and modify the Si-containing layer.

[0037] The modification of the Si-containing layer includes, for example, removing halogen elements contained in the Si-containing layer. By removing halogen elements, dangling bonds of Si can be formed. As a result, the Si-containing layer can be activated, and the nitridation of the Si-containing layer can be promoted. In this embodiment, the nitridation of the Si-containing layer is performed after the modification of the Si-containing layer.

[0038] 3 is an explanatory diagram of a gas supply unit and a control unit of the film forming apparatus 10 according to the embodiment. In the film forming apparatus 10, the gas supply unit includes a source gas supply source 70, a modifying gas supply source 75, and a nitriding gas supply source 80. The source gas supply source 70 supplies a source gas into the processing chamber 11. The source gas contains an element to be nitrided (e.g., silicon).

[0039] As the source gas, for example, dichlorosilane (DCS: SiH2Cl2) gas is used. Note that although the source gas in this embodiment is DCS gas, the technology of the present disclosure is not limited to this. In addition to DCS gas, other source gases that can be used include monochlorosilane (MCS: SiH3Cl) gas, trichlorosilane (TCS: SiHCl3) gas, silicon tetrachloride (STC: SiCl4) gas, and hexachlorodisilane (HCDS: Si2Cl6) gas. By supplying these gases to the wafer 2, a layer containing silicon (Si) (Si-containing layer) can be formed on the wafer 2. Because the source gas contains a halogen element, the Si-containing layer contains a halogen element in addition to Si.

[0040] A raw material gas pipe 72 connects the raw material gas supply source 70 to the gas supply pipes 40A and 40B, and sends the raw material gas from the raw material gas supply source 70 to the gas supply pipes 40A and 40B. The raw material gas is discharged horizontally toward the wafers 2 from the gas inlets 42A and 42B of the vertical pipes 41A and 41B. A raw material gas flow rate control valve 73 is provided midway along the raw material gas pipe 72 and controls the flow rate of the raw material gas.

[0041] The modifying gas supply source 75 modifies the Si-containing layer by supplying a modifying gas into the processing chamber 11. The modification of the Si-containing layer includes, for example, removing halogen elements contained in the Si-containing layer. By removing the halogen elements, dangling bonds of Si can be formed. As a result, the Si-containing layer can be activated, and nitridation of the Si-containing layer can be promoted. The modifying gas can be nitrogen gas, hydrogen gas, ammonia gas, or a gas containing any of these gases.

[0042] The modified gas pipe 77 connects the modified gas supply source 75 and the gas supply pipe 40C, and sends the modified gas from the modified gas supply source 75 to the gas supply pipe 40C. The modified gas is discharged horizontally from the gas inlet 42C of the vertical pipe 41C toward the wafers 2. The modified gas flow control valve 78 is provided midway along the modified gas pipe 77 and controls the flow rate of the modified gas.

[0043] The nitriding gas supply source 80 supplies nitriding gas into the processing chamber 11 to nitride the Si-containing layer. Examples of the nitriding gas include ammonia (NH) gas, an organic hydrazine compound gas, an amine-based gas, NO gas, NO gas, or NO gas. Examples of the organic hydrazine compound gas include hydrazine (NH) gas, diazene (NH) gas, or monomethylhydrazine (MMH) gas. Examples of the amine-based gas include monomethylamine gas.

[0044] Nitriding gas pipe 82 connects nitriding gas supply source 80 and gas supply pipe 40C, and sends nitriding gas from nitriding gas supply source 80 to gas supply pipe 40C. The nitriding gas is discharged horizontally toward wafer 2 from gas inlet 42C of vertical pipe 41C. Nitriding gas flow rate control valve 83 is provided midway along nitriding gas pipe 82 and controls the flow rate of the nitriding gas.

[0045] Furthermore, a purge gas supply source (not shown) may be provided. By supplying a purge gas into the processing vessel 11, the source gas, modifying gas, and nitriding gas remaining inside the processing vessel 11 are removed. As the purge gas, for example, an inert gas is used. As the inert gas, a rare gas such as Ar gas or N2 gas is used.

[0046] 3, the film forming apparatus 10 includes a control unit 100 that controls the film forming apparatus 10. The control unit 100 is configured, for example, by a computer, and includes a CPU (Central Processing Unit) 101 and a memory 102. The memory 102 stores programs that control various processes executed in the film forming apparatus 10. The control unit 100 controls the operation of the film forming apparatus 10 by causing the CPU 101 to execute the programs stored in the memory 102. The control unit 100 also includes an input interface 103 and an output interface 104. The control unit 100 receives signals from the outside via the input interface 103 and transmits signals to the outside via the output interface 104.

[0047] Such a program may be stored in a computer-readable medium and installed from that medium into memory 102 of control unit 100. Examples of computer-readable media include a hard disk (HD), a flexible disk (FD), a compact disk (CD), a magnetic optical disk (MO), and a memory card. The program may also be downloaded from a server via the Internet and installed into memory 102 of control unit 100.

[0048] [Paschen curve] 4 shows Paschen curves for NH3 gas, H2 gas, and N2 gas. The horizontal axis represents the product pd of the pressure p in the processing vessel body 12 and the inter-electrode distance d, and the vertical axis represents the discharge voltage (minimum ignition voltage) V required for plasma ignition. B is specified for each gas.

[0049] Assume that nitrogen (N2) gas is supplied into the plasma box 19. The discharge voltage V at the intersection of the Paschen curve of N2 gas and the dotted line representing pD1 (D1: distance between electrodes 91 and 92, see Figure 2) B In other words, in the plasma box 19 in a nitrogen gas atmosphere, by applying a voltage equal to or greater than the discharge initiation voltage according to the Paschen curve, that is, a voltage of 1000 V or more, between the electrodes 91 and 92, plasma can be ignited in the plasma box 19 and plasma can be generated. In other words, in the plasma box 19, the minimum ignition voltage between the electrodes (discharge voltage V B ) is 1000V, and it can be seen that plasma does not ignite in the plasma box 19 even if a voltage lower than 1000V is applied between the electrodes 91 and 92.

[0050] The ignition control method according to this embodiment provides a technology that can suppress reflected waves and perform more stable plasma ignition by using the electronic matcher 53. This makes it possible to further improve the controllability of the film thickness and film quality of the wafer 2.

[0051] For stable plasma ignition in the plasma box 19, the voltage between the electrodes 91 and 92 (interelectrode voltage) must be the minimum ignition voltage (discharge voltage) V obtained from the Paschen curve. BThis is possible by controlling the voltage between the electrodes relative to the discharge voltage obtained from the Paschen curve. Therefore, in order to control the "inter-electrode voltage" at the time of plasma ignition relative to the discharge voltage obtained from the Paschen curve, the adjustment positions of the first variable capacitor 57 and the second variable capacitor 58 in the electronic matcher 53 are controlled. This adjusts the capacitance elements C1 and C2 of the first variable capacitor 57 and the second variable capacitor 58. In addition to adjusting the capacitance elements C1 and C2, the frequency of the RF power supply 55 may be variably controlled. In this case, the RF power supply 55 uses a frequency-variable RF power supply whose frequency can be variably controlled.

[0052] [table] For each frequency of the high frequency supplied by the RF power supply 55 and for each different gas, the inter-electrode voltage at each adjustment position of the first variable capacitor 57 and the second variable capacitor 58 is measured by the sensor 56. From the measured values, a table storing the inter-electrode voltage at each adjustment position (each position of the matrix C1 and C2 in FIG. 5) is created.

[0053] The inter-electrode voltage at each position of the C1 and C2 matrix is ​​measured when a radio frequency voltage having a first frequency such as 13.56 MHz or 14.56 MHz and a power level that does not ignite plasma (for example, 5 W) is applied between electrodes 91 and 92 from RF power supply 55. Fig. 5 is an example table obtained by calculating the inter-electrode voltage at each position of the C1 and C2 matrix from the measured values ​​when a radio frequency voltage having the first frequency and a power level that ignites plasma (for example, 100 W) is applied between electrodes 91 and 92 from RF power supply 55. The table is stored in memory 102, for example.

[0054] When measuring the interelectrode voltage, nitrogen gas was supplied from the gas inlets 42A, 42B, and 42C of the vertical pipes 41A, 41B, and 41C. However, it is sufficient that nitrogen gas be supplied from at least one of the gas inlets 42A, 42B, and 42C of the vertical pipes 41A, 41B, and 41C.

[0055] Each position in the C1 and C2 matrices is shifted in 5% increments within a range from the minimum position of 0% to the maximum position of 100%. From the measured interelectrode voltage when the adjustment positions of C1 and C2 are changed in 5% increments, the interelectrode voltage required for plasma ignition at each position of C1 and C2 is calculated and stored in the table in Figure 5. In Figure 5, the change is made in 5% increments, but this is not limiting and the increment value may be changed.

[0056] Such a table is created for each process type. The process type is identification information that specifies the substrate processing conditions, which are assigned according to the frequency of the high frequency power output from the RF power supply 55, the type of gas supplied into the processing vessel, and the temperature and pressure inside the processing vessel.

[0057] For each process type, the interelectrode voltage for each of multiple adjustment positions of each variable capacitor when a high-frequency voltage of a first frequency is applied from the RF power supply 55 to the pair of electrodes 91, 92 is measured as first information immediately before plasma ignition. The table shown in Figure 5 as an example is a calculation of the interelectrode voltage required for plasma ignition at each of positions C1 and C2 from the first information, which is the measured value. Note that if the interelectrode voltage at each of positions C1 and C2 set in the table is the same as or slightly higher than the discharge voltage, there is a risk of non-ignition, and if the interelectrode voltage is too high compared to the discharge voltage, large reflected waves will be generated. For this reason, the table calculates an interelectrode voltage for each of positions C1 and C2 with a certain margin from the discharge voltage based on the first information.

[0058] When creating the table of Figure 5, the first information is obtained by measuring the interelectrode voltage when plasma is not ignited in plasma box 19. In this way, stable voltage measurement is possible when measuring the interelectrode voltage by using a low radio frequency voltage and pressure that do not generate plasma. Based on the first information indicating the interelectrode voltage when a radio frequency voltage is applied from RF power supply 55 at a power that does not generate plasma discharge, the interelectrode voltage is converted to the interelectrode voltage when a radio frequency voltage is applied from RF power supply 55 at a power of 100 W that ignites plasma. The converted interelectrode voltages are stored in the positions of matrices C1 and C2 shown in the table of Figure 5.

[0059] Referring to the created table, for N2 gas, the discharge voltage V B The positions of the C1 and C2 matrix are determined so that the interelectrode voltage is not too high, 1000V or more, and the preset values ​​of C1 and C2 are determined. By setting the initial adjustment positions of the first variable capacitor 57 (C1) and the second variable capacitor 58 (C2) to the determined preset values, reflected waves can be suppressed and stable plasma ignition can be achieved.

[0060] 5 does not necessarily have to be measured immediately before plasma ignition, but may be measured in advance under the same conditions as those for measuring the first information. The measured values ​​measured in advance may be used as advance information, and after the advance information is measured, the first information may be measured immediately before plasma ignition, and the table created from the advance information may be updated based on the first information.

[0061] In this case, the range of the first information measured immediately before plasma ignition may be narrower than the measurement range of the preliminary information (all positions of the C1 and C2 matrices in FIG. 5). The measurement range of the first information is preferably a range that includes the alignment position of plasma ignition. In the case of N2 gas, the discharge voltage V shown in FIG. B The measurement range of the first information may be a range centered on the matching position of plasma ignition where the voltage is 1000 V or more and not too high. However, if a table created from advance information is not prepared in advance, the initial measurement range of the first information is the range of 0 to 100% for both C1 and C2, that is, the range of all positions in the C1 and C2 matrices in FIG.

[0062] If the measurement range of the first information is narrower than the measurement range of the preliminary information, the voltage at each position of the matrix C1 and C2 that overlaps with the measurement range of the first information in the pre-stored table of preliminary information is updated with the inter-electrode voltage calculated from the first information. The updated table is referred to as the table of first information, and in the case of N2 gas, the discharge voltage V shown in Figure 4 is calculated. B The positions of the matrix of C1 and C2 having an inter-electrode voltage of 1000 V or more but not too high are determined, and the preset values ​​of C1 and C2 are determined.

[0063] Measuring the information in advance is not necessarily required. When creating the table of FIG. 5, immediately before igniting plasma, the matching circuit of the electronic matcher 53 is varied, and a high-frequency voltage that does not ignite plasma is applied to measure the interelectrode voltage (or interelectrode current). From this measurement, the interelectrode voltage obtained when a high-frequency voltage that ignites plasma is applied may be calculated. Using the matching circuit of the electronic matcher 53, the calculation result can be obtained within, for example, one second immediately before plasma ignition. This allows preset values ​​to be determined, and the initial adjustment positions of each variable capacitor are set to the determined preset values, thereby suppressing reflected waves and achieving stable plasma ignition. While mechanically varying the matching circuit takes several seconds, using the electronically controllable variable capacitors of the electronic matcher 53 allows optimal values ​​for the interelectrode voltage at each position C1 and C2 to be obtained in a short time immediately before plasma ignition, enabling the creation of the first information table. This allows preset values ​​to be determined based on the latest table that best represents the interelectrode voltage state at plasma ignition, enabling high-speed control of each variable capacitor to a matching position with fewer reflected waves.

[0064] Fig. 6 is a diagram showing an example of setting information such as preset values ​​for each process type stored in memory 102. When the example table in Fig. 5 is for process type A, the preset value determined in the table in Fig. 5 is the alignment position MP1, and 60% and 20% are stored as the preset values ​​C1 and C2 in Fig. 6.

[0065] When the RF power supply 55 is a variable frequency RF power supply capable of variably controlling the frequency and the frequency of the high frequency at the time of ignition is changed, for example, from the first frequency to the second frequency, a table of the second frequency is also created. When a high frequency voltage of the second frequency that is not strong enough to ignite plasma is applied, the inter-electrode voltage at each position of the matrix C1 and C2 in FIG. 5 is measured and used as second information. The table of second information is created in the same way as when the table of first information was created. By referring to the created table of second information, in the case of N2 gas, the discharge voltage V shown in FIG. BThe matrix positions of C1 and C2 are determined so that the interelectrode voltage is 1000V or more and not too high, and the preset values ​​of C1 and C2 are determined. By setting the initial adjustment positions of the first variable capacitor 57 (C1) and the second variable capacitor 58 (C2) to the determined preset values, reflected waves can be suppressed even when a high-frequency voltage of the second frequency is applied, and stable plasma ignition can be achieved.

[0066] The frequency of the high frequency that has been set as described above is stored for each process type in the frequency of the start information of the setting information in FIG. 6. The start information also includes the second frequency duration (Time) at the time of ignition, the discharge voltage (minimum ignition voltage) V B , pressure P is stored. Furthermore, the power value of the high frequency traveling wave is stored in Pf, and is used as a conversion value when creating the matrix in Figure 5. Also, the preset update warning stores the threshold value for the difference between the current preset value and the previous preset value.

[0067] [Ignition control method] Next, the ignition control method according to this embodiment will be described with reference to Fig. 7. Fig. 7 is a flowchart showing the ignition control method according to this embodiment. The ignition control method according to this embodiment is controlled by the control unit 100.

[0068] In this example, the RF power supply 55 is turned on and a radio frequency voltage of a first frequency (e.g., 13.56 MHz) is applied. Thereafter, the frequency may be changed from the first frequency to a second frequency (e.g., 14.56 MHz), and the RF power supply 55 may apply a radio frequency voltage of the second frequency.

[0069] The process of FIG. 7 starts when the power supply of the film forming apparatus 10 is turned on. The frequency of the high frequency power output from the RF power supply 55 is set to a first frequency in advance, and the idle mode is executed (step S1). In the idle mode, the high frequency voltage from the RF power supply 55 is turned off. In this state, the control unit 100 supplies nitrogen gas from the multiple gas inlets 42A, 42B, and 42C of the vertical pipes 41A, 41B, and 41C. Furthermore, the wafers 2 placed on the substrate holder 30 are loaded into the processing chamber 11 to prepare for processing (step S2). In step S2, first, outside the processing chamber 11, a transfer device places the multiple wafers 2 on the substrate holder 30. The substrate holder 30 holds the multiple wafers 2 horizontally with a vertical spacing between them. Next, the lifting unit 25 is raised, and the lid 20 and the substrate holder 30 are raised. The wafer 2 is carried into the processing vessel 11 together with the substrate holder 30 , and the opening at the bottom of the processing vessel 11 is sealed with the lid 20 .

[0070] Next, the control unit 100 sets the process type of the treatment to be performed on the wafer 2 (step S3). Next, the control unit 100 measures the inter-electrode voltage while applying a low-voltage high-frequency voltage from the RF power supply 55 at a power level that does not cause plasma discharge (ignition). This executes a scan mode in which the inter-electrode voltage is measured at each position of the matrix C1 and C2 in FIG. 5 (step S4). The control unit 100 scans the range of 0 to 100% for both C1 and C2 in increments of 5%, for example, and creates a table of first information as shown in FIG. 5. If a table of information has been created in advance, the measurement range of the first information may be narrower. After the measurement, the output of the low voltage from the RF power supply 55 is stopped. The control unit 100 calculates an appropriate inter-electrode voltage based on the first information of the measured inter-electrode voltage, and sets the discharge voltage V B The positions of C1 and C2 that can obtain an inter-electrode voltage that is equal to or greater than this and that is not too high are determined as preset values ​​(step S5). Note that if a table of advance information has been created, the table of advance information may be used to update the table of advance information based on the first information in steps S4 and S5, and a table of the first information may be created.

[0071] Next, the control unit 100 turns on the RF power supply 55 and determines whether a high-frequency voltage of a power capable of plasma ignition has been applied (step S6). For example, when a high-frequency voltage of a power set in a process recipe has been applied, the control unit 100 determines that a high-frequency voltage of a power capable of plasma ignition has been applied from the RF power supply 55.

[0072] As a result of the above, a first information table is created as a table having discharge start voltages and matching positions for each temperature and pressure of each gas type according to the process type. Steps S4 and S5 are measurements taken immediately before plasma ignition. In both cases, a high-frequency voltage of low power that will not ignite plasma is applied from the RF power supply 55. The application of the high-frequency voltage from the RF power supply 55 at this time is not determined to be the on state of the RF power supply 55.

[0073] In steps S4 and S5, a low-power high-frequency voltage that does not ignite plasma is applied from the RF power supply 55, and the inter-electrode voltage (or current) is measured when the impedance is varied within the variable range of the electronic matcher 53.

[0074] The table is created so that the discharge voltage for each gas type and temperature and pressure can be obtained for each process type, by converting from the above measured values, when the RF power supply 55 applies a high frequency voltage at the power required for plasma ignition.

[0075] The table can be created quickly by using the electronic matcher 53 to achieve high-speed impedance matching after the RF power supply 55 is turned on in step S6 and immediately before plasma ignition.

[0076] Next, the control unit 100 executes the process of the set process type on the wafer 2 (step S10).

[0077] Next, the control unit 100 determines whether the RF power supply 55 has been turned off (step S11). If the control unit 100 determines that the RF power supply 55 has not been turned off, it continues the processing of step S10. If the control unit 100 determines that the RF power supply 55 has been turned off, it determines whether the process has ended (step S12).

[0078] If the control unit 100 determines that the process is not completed, it returns to step S3 and executes the processes from step S3 onwards. If the control unit 100 determines that the process is completed, it unloads the substrate (step S13), returns to step S1 and waits until the next wafer 2 is loaded (idle mode). Once the next wafer 2 is loaded, it executes the processes from step S2 onwards.

[0079] The frequency of the high-frequency voltage of the RF power supply 55 may be set or changed as appropriate during the idle mode. The inter-electrode voltage may be made variable by varying the frequency of the power supply that supplies RF power at the time of ignition. For example, the inter-electrode voltage may be made variable by changing the frequency of the high-frequency power output from the RF power supply 55 from the second frequency to the first frequency when a predetermined time has elapsed since the start of execution of the process in step S10. This predetermined time may be the second frequency duration set in the start information of the setting information in FIG. 6.

[0080] It is difficult for a matcher having a motor-controlled mechanical element (mechanical matcher) to create the table shown in Fig. 5 in a short time of less than one second, as can be done with the electronic matcher 53. For this reason, when using a mechanical matcher, it is difficult to perform matching control based on a table that reflects the influence of the impedance change immediately before plasma ignition after the RF power supply 55 is turned on. The influence of such an impedance change immediately before plasma ignition may cause a reflected wave of the supplied high-frequency voltage.

[0081] According to the ignition control method of the present disclosure, it is possible to capture the change in interelectrode voltage due to changes in impedance immediately before plasma ignition, for example, using an electronic matcher 53. Taking into account the effect of this change, it is possible to create a table in a short time (within 1 second) immediately before plasma ignition, in which the minimum ignition voltage with a margin greater than the value required for plasma ignition is calculated for each position of the C1 and C2 matrices. This makes it possible to create a table that reflects the effect of electrode deformation on impedance matching, even if the electrodes are slightly deformed due to temperature, for example.

[0082] In this embodiment, the preset values ​​of C1 and C2 are determined based on the table created immediately before plasma ignition, and the adjustment positions of the variable capacitors 57 and 58 (initial positions of C1 and C2) are set to the determined preset values. This makes it possible to suppress an increase in reflected waves due to changes in impedance immediately before plasma ignition, and enables stable plasma ignition.

[0083] It is also possible to have a function of feeding back the matching position of the electronic matcher 53 at the time of plasma ignition to the table of first information. For example, in Fig. 5, the matching position MP1 is fed back to the table of first information.

[0084] A table is created for each process type. The table can be created in test mode or during the actual process. In test mode, a table of preliminary information is created. During the actual process, a table of first information is created. Creating a table of preliminary information can be omitted.

[0085] When multiple plasma discharge states exist, the inter-electrode voltage during impedance matching may be monitored, and if the discharge state differs from the set process type, the correct process type may be determined from the monitored inter-electrode voltage, and automatic control may be performed to set the correct process type and re-ignition may be performed. In this way, the control unit 100 may have a function to automatically control the discharge state to the correct process type even when the set process type is incorrect. An alarm may be output (displayed) to alert the operator that the process type has been automatically changed and re-ignition has been performed.

[0086] Furthermore, the control unit 100 may output various alarms based on the setting information in FIG.

[0087] An alarm may be output when the difference between the currently determined preset values ​​of C1 and C2 and the previously determined preset values ​​is equal to or greater than the threshold value shown in the preset update warning in Fig. 6. For example, an alarm may be output (displayed) to alert the operator when the current and previous preset values ​​deviate by 10% or more from the threshold value.

[0088] 6 differs from the set value, an alarm may be output (displayed). For example, when the process type is A, an alarm may be output (displayed) if the process was scheduled to be performed at 1 Torr but was 5 Torr when the RF power supply 55 was turned on.

[0089] [Film forming method] Next, a film formation method according to an embodiment will be described with reference to FIGS. 8 and 9. FIG. 8 is a flowchart showing the film formation method according to an embodiment. FIG. 9 is a time chart showing the film formation method according to an embodiment. The film formation method according to an embodiment is controlled by a control unit 100. The film formation method of FIG. 8 is an example of a process executed in step 11 of FIG. 7.

[0090] When the film formation method is started, the control unit 100 forms a Si-containing layer on the wafer 2 held by the substrate holder 30 (step S21). This step S21 is performed from time t1 to time t2 shown in FIG. 9. In this step S21, a source gas is supplied from the source gas supply source 70 into the processing chamber 11 while the inside of the processing chamber 11 is evacuated by an exhaust device connected to the exhaust pipe 45. The source gas is, for example, DCS gas. As a result, a Si-containing layer is formed on the wafer 2. The time period for this step S21 is, for example, 1 second or more and 10 seconds or less.

[0091] Next, the control unit 100 performs a purge step (step S22). This step S22 is performed from time t2 to time t3 shown in FIG. 9. In this step S22, a purge gas is supplied into the processing vessel 11 while the inside of the processing vessel 11 is evacuated by an exhaust device. This replaces gas remaining inside the processing vessel 11 with the purge gas. The purge gas may be nitrogen gas, argon gas, other inert gases, or a combination thereof. The time period for this step S22 is, for example, 3 seconds or more and 10 seconds or less. The purge gas may be supplied from a nitriding gas supply source 80 or the like.

[0092] Next, the control unit 100 performs a modifying step of the Si-containing layer (step S23). This step S23 is performed from time t3 to time t4 shown in FIG. 9 . In this step S23, the modifying gas is supplied into the processing vessel 11 by the modifying gas supply source 75 while the inside of the processing vessel 11 is evacuated by the exhaust device. Also, in this step S23, plasma is ignited in either the plasma box 19 or the processing vessel 11 to convert the modifying gas into plasma. In this step S23, the ignition control method according to the embodiment is executed, and the control unit 100 controls the initial positions of the first variable capacitor 57 and the second variable capacitor 58 so that the region where plasma is ignited is selected to be either the plasma box 19 or the processing vessel 11.

[0093] The modifying gas is, for example, nitrogen gas. The modifying gas may be hydrogen gas or ammonia gas. The modifying gas may be a gas containing nitrogen gas or a gas containing hydrogen gas. The Si-containing layer is modified with the plasmatized modifying gas. The modification of the Si-containing layer includes, for example, removing halogen elements contained in the Si-containing layer. Removing the halogen elements can form dangling bonds of Si. As a result, the Si-containing layer can be activated, and nitridation of the Si-containing layer can be promoted. The high frequency of the RF power source 55 is, for example, 13.56 MHz or 14.56 MHz. The time for step S23 is, for example, 3 seconds or more and 60 seconds or less.

[0094] Next, the control unit 100 performs a purge process (step S24). This step S24 is performed from time t4 to time t5 shown in FIG. 9. In this step S24, a purge gas is supplied into the processing vessel 11 while the inside of the processing vessel 11 is evacuated by an exhaust device. As a result, gas remaining inside the processing vessel 11 is replaced with the purge gas. The time for this step S24 is, for example, 3 seconds or more and 10 seconds or less. The purge gas may be nitrogen gas or the like, and may be supplied from a nitriding gas supply source 80 or the like.

[0095] Next, the control unit 100 performs a nitriding process on the Si-containing layer (step S25). This step S25 is performed from time t5 to time t6 shown in FIG. 9 . In this step S25, the nitriding gas is supplied into the processing chamber 11 by the nitriding gas supply source 80 while the inside of the processing chamber 11 is evacuated by the exhaust device. In this step S25, plasma is ignited in either the plasma box 19 or the processing chamber 11 to convert the nitriding gas into plasma. In this step S25, the ignition control method according to the embodiment is executed, and the control unit 100 controls the initial positions of the first variable capacitor 57 and the second variable capacitor 58 so that the region where plasma is ignited is selected in either the plasma box 19 or the processing chamber 11. The nitriding gas is, for example, ammonia gas. The Si-containing layer is nitrided with the plasmatized ammonia gas. The time required for step S25 is, for example, 5 seconds or more and 120 seconds or less.

[0096] Next, the control unit 100 performs a purge process (step S26). This step S26 is performed from time t6 to time t7 shown in FIG. 9. In this step S26, a purge gas is supplied into the processing vessel 11 while the inside of the processing vessel 11 is evacuated by the exhaust device. As a result, gas remaining inside the processing vessel 11 is replaced with the purge gas. The time for this step S26 is, for example, 3 seconds or more and 10 seconds or less. The purge gas may be nitrogen gas or the like, and may be supplied from a nitriding gas supply source 80 or the like.

[0097] Next, the control unit 100 determines whether the process has been repeated a set number of times (step S27). The set number of times is set in advance, and if the control unit 100 determines that the process has not been repeated the set number of times, the process returns to step S21 and repeats the cycle of steps S21 to S27. During the repeated cycle, the temperature of the wafer 2 is, for example, 400°C or higher and 600°C or lower, and the pressure inside the processing chamber 11 is, for example, 13 Pa or higher and 665 Pa or lower.

[0098] When the control unit 100 determines that the process has been repeated the set number of times, it means that a silicon nitride film of the desired film thickness and film quality has been formed, and the process ends.

[0099] In the film forming method described above, the purging step can be omitted. The film forming method according to the embodiment includes at least the following steps (A), (B), and (C). (A) A step of supplying a source gas containing an element to be nitrided onto a substrate and forming a layer containing the element on the substrate. (B) a step of supplying the source gas to the substrate, and then supplying nitrogen gas, hydrogen gas, or ammonia gas activated by plasma to modify the layer containing the element. (C) A step of supplying a nitrogen-containing gas activated by plasma to nitride the element. Then, in step (B), plasma ignition is performed using the above-described ignition control method.

[0100] As described above, the ignition control method, film formation method, and film formation apparatus of this embodiment can suppress reflected waves and perform more stable plasma ignition, thereby improving the controllability of the film thickness and film quality formed on the wafer.

[0101] The ignition control method, film formation method, and film formation apparatus according to the presently disclosed embodiments should be considered to be illustrative in all respects and not restrictive. The embodiments can be modified and improved in various ways without departing from the scope and spirit of the appended claims. The features described in the above embodiments can be configured in other ways within a consistent range, and can be combined within a consistent range.

[0102] The processes of the ignition control method shown in FIG. 7 and the film formation method shown in FIG. [Explanation of symbols]

[0103] 10 Film deposition equipment 11 Processing container 19 Plasma Box 53 Electronic Matcher 57 First variable capacitor 58 Second variable capacitor 100 control section

Claims

1. a processing vessel for accommodating a substrate; a plasma box formed in the processing vessel; a pair of electrodes arranged to sandwich the plasma box; an RF power supply connected to the pair of electrodes via a matching box having a variable capacitor, (a) setting a process type that specifies processing conditions for the substrate; (b) measuring, for each of the process types, first information indicating a voltage between the electrodes for each of a plurality of adjustment positions of the variable capacitor when a high-frequency voltage of a first frequency is applied from the RF power source to the pair of electrodes; (c) determining a preset value of the variable capacitor based on the measured first information; (d) setting an initial position of the adjustment position of the variable capacitor to the determined preset value.

2. The matching circuit having the variable capacitor is an electronic matcher that does not include any mechanical elements. The ignition control method according to claim 1 .

3. (e) measuring in advance prior information indicating a voltage between the electrodes for each of a plurality of adjustment positions of the variable capacitor when a high frequency voltage of a first frequency is applied from the RF power source to the pair of electrodes, and storing the prior information in a storage unit in advance; (c) determining a preset value of the variable capacitor based on the prior information and the first information; The ignition control method according to claim 1 or 2.

4. the first information measured in (b) is obtained by measuring the voltage between the electrodes for each of a plurality of adjustment positions, the number of which is smaller than the number of the preliminary information measured in advance in (e); The ignition control method according to claim 3 .

5. (b) measuring the first information immediately before plasma ignition; The ignition control method according to any one of claims 1 to 4.

6. the RF power supply is a variable frequency RF power supply capable of variably controlling a frequency, (b) measuring, for each process type, second information indicating a voltage between the electrodes for each of a plurality of adjustment positions of the variable capacitor when a high frequency voltage of the second frequency is applied from the frequency variable RF power supply to the pair of electrodes when the frequency of the frequency variable RF power supply is changed from the first frequency to the second frequency; (c) determining a preset value of the variable capacitor based on the measured second information; The ignition control method according to any one of claims 1 to 5.

7. (c) outputs an alarm when a difference between the currently determined initial position of the variable capacitor and the previously determined initial position of the variable capacitor is equal to or greater than a threshold value. The ignition control method according to any one of claims 1 to 6.

8. (A) supplying a source gas containing an element to be nitrided to a substrate to form a layer containing the element on the substrate; (B) supplying the source gas to the substrate, and then supplying nitrogen gas, hydrogen gas, or ammonia gas activated by plasma to modify the layer containing the element; (C) supplying a gas containing nitrogen activated by plasma to nitride the element, A film forming method, wherein in the step (B), plasma ignition is performed using the ignition control method according to any one of claims 1 to 7.

9. a processing vessel for accommodating a substrate; a plasma box formed in the processing vessel; a pair of electrodes arranged to sandwich the plasma box; an RF power supply connected to the pair of electrodes via a matching box having a variable capacitor; A film forming apparatus having a control unit, The control unit (a) setting a process type that specifies processing conditions for the substrate; (b) measuring, for each of the process types, first information indicating a voltage between the electrodes for each of a plurality of adjustment positions of the variable capacitor when a high-frequency voltage of a first frequency is applied from the RF power source to the pair of electrodes; (c) determining a preset value of the variable capacitor based on the measured first information; (d) setting the initial position of the adjustment position of the variable capacitor to the determined preset value.

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