Multi-pulse atomic layer deposition apparatus for filling gaps in high aspect ratio semiconductor structures and atomic layer deposition method using the same

Abstract

To provide an atomic layer deposition device to fill a gap of a semiconductor structure with a high aspect ratio, and a deposition method using the same.SOLUTION: An atomic layer deposition method for filling the gap of a semiconductor structure with a high aspect ratio has an effect, on a high aspect ratio structure of 40:1 or more, of removing an overhang at an entrance at the same time as deposition and also performing the gap-filling to remove a void and a seam by improving bottom-up deposition.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present invention relates to an atomic layer deposition apparatus for filling gaps in semiconductor structures with high aspect ratios, and more particularly to an atomic layer deposition method for filling gaps in semiconductor structures with high aspect ratios by controlling the on / off of pulsed source RF power and pulsed bias RF power. [Background technology]

[0002] In response to the demand for high performance and high capacity semiconductor devices, the structure has changed from 2D to 3D (d), the size of the device has decreased, and the height of the device has become even higher.

[0003] As a result, pattern structures have become high aspect ratio structures, and in high aspect ratio structures, the separation process for separating cells in a transistor array becomes even more important.

[0004] The isolation process uses silicon dioxide (SiO2) material, which has excellent dielectric properties, to fill the high aspect ratio structure, which is called a gap-filling process.

[0005] However, when gap filling high aspect ratio structures using conventional methods, voids or seams can occur within the structures, which can cause defects that degrade device performance. It is known that the occurrence of such voids and seams is caused by overhangs at the entrances of high aspect ratio structures.

[0006] Various techniques have been known for gap filling in high aspect ratio structures, including spin-coating using a liquid source, flowable deposition (F-CVD) using the fluidity of precursors, and atomic layer deposition (ALD). Atomic layer deposition is divided into thermal and plasma methods.

[0007] In this case, the spin coating method requires a subsequent high-temperature steam heat treatment process at 800°C or higher to obtain silicon oxide (SiO2) with excellent dielectric properties after depositing a liquid source on the wafer surface. Such a high-temperature heat treatment process causes a decrease in device performance in the high aspect ratio structure of 3(d).

[0008] In addition, the F-CVD method uses a fluid precursor to fill the gap, and then converts it into silicon oxide (SiO2), which has excellent dielectric properties, through a subsequent curing process. However, the curing process requires a high-temperature heat treatment at over 700°C, which can cause a decrease in device performance.

[0009] ALD also uses atomic layer deposition techniques, which are divided into thermal atomic layer deposition (thermal ALD) and plasma-enhanced atomic layer deposition (PE-ALD). Thermal techniques also require high-temperature processes, while plasma-enhanced techniques allow for relatively low-temperature processes, but they have the problem of overhangs at the entrance of high aspect ratios.

[0010] This creates voids or seams within the structure, and the cause of the overhang occurs because the deposition rate is faster at the inlet than at the bottom or side-wall of the structure.

[0011] The reason for the high deposition rate is the high concentration of reactive species such as ions and radicals used in the reaction. To solve this overhang problem, an additional process of repeating deposition-etch-deposition is required, and the resulting low throughput is the cause of low productivity. Thus, many challenges remain in bridging the gap in high aspect ratio semiconductor structures. Summary of the Invention [Problem to be solved by the invention]

[0012] The technical problem to be solved by the present invention is to provide an atomic layer deposition apparatus for filling gaps in high aspect ratio semiconductor structures, and a manufacturing method thereof.

[0013] The technical problems that the present invention aims to achieve are not limited to the above-mentioned technical problems, and other technical problems not mentioned will be clearly understood by those skilled in the art to which the present invention pertains from the following description. [Means for solving the problem]

[0014] To achieve the above technical objectives, one embodiment of the present invention provides an atomic layer deposition method for filling gaps in high aspect ratio semiconductor structures.

[0015] According to one embodiment of the present invention, the atomic layer deposition method for filling gaps in a high aspect ratio semiconductor structure includes a first step of placing a substrate having a high aspect ratio structure formed thereon into a reaction chamber; a second step of introducing a precursor gas onto the substrate on which the high aspect ratio structure is formed, and allowing the precursor gas to be adsorbed onto the substrate; a third step of supplying a process gas into the reaction chamber, applying a source RF power in a pulsed or non-pulsed manner to generate plasma in a reaction space above the substrate, and applying a bias RF power in a pulsed manner; and a fourth step of controlling on / off of the pulsed or non-pulsed source RF power and the pulsed bias RF power.

[0016] According to an embodiment of the present invention, the method may further include a step of performing a purge between the second step and the third step.

[0017] Furthermore, according to one embodiment of the present invention, in the fourth step, the pulsed or non-pulsed source RF power may be continuously applied at the same power, and the pulsed bias RF power may be applied in an on-off state.

[0018] According to an embodiment of the present invention, in claim 3, the pulse duty ratio of the pulsed bias RF power when it is turned on and off may be 1% to 100%, and the pulse frequency may be 500 Hz to 50 kHz.

[0019] According to another embodiment of the present invention, in the fourth step, the pulsed or non-pulsed source RF power may be continuously applied at the same intensity, and the pulsed bias RF power may be continuously applied with its intensity adjusted.

[0020] According to an embodiment of the present invention, in the fourth step, the pulsed or non-pulsed source RF power may be continuously applied with its intensity adjusted, and the pulsed bias RF power may be continuously applied with its intensity adjusted.

[0021] According to an embodiment of the present invention, in the fourth step, the pulsed or non-pulsed source RF power may be applied in an on-off state, and the pulsed bias RF power may be applied in an on-off state.

[0022] Furthermore, according to one embodiment of the present invention, in the fourth step, the pulsed or non-pulsed source RF power and the pulsed bias RF power may be applied or cut off simultaneously.

[0023] Furthermore, according to an embodiment of the present invention, in the fourth step, when the pulsed or non-pulsed source RF power is applied, the pulsed bias RF power may be cut off, and when the pulsed source RF power is cut off, the pulsed bias RF power may be applied.

[0024] Furthermore, according to an embodiment of the present invention, the bias RF power may be applied in a range of 5 W to 500 W depending on the process equipment.

[0025] Furthermore, according to one embodiment of the present invention, in the fourth step, when the interior of the high aspect ratio structure is filled with a deposit of the deposition process gas, the application of the pulsed source RF power and the pulsed bias RF power may be stopped.

[0026] Additionally, according to one embodiment of the present invention, an additional power supply may be included to apply power in addition to the bias RF power.

[0027] According to an embodiment of the present invention, the atomic layer deposition method for filling gaps in the high aspect ratio semiconductor structure may be performed at a temperature of 0°C to 500°C.

[0028] To achieve the above technical objectives, another embodiment of the present invention provides an atomic layer deposition apparatus for filling gaps in high aspect ratio semiconductor structures.

[0029] According to an embodiment of the present invention, an atomic layer deposition apparatus for filling gaps in a high aspect ratio semiconductor structure may include a reaction chamber forming a reaction space, a substrate mounting stage disposed within the reaction chamber and on which a substrate is placed, a gas injection unit configured to inject a precursor and a process gas onto an upper portion of the substrate mounting stage, a source RF plasma generator disposed at an upper portion of the reaction chamber and connected to the gas injection unit, a bias RF power supply disposed at a lower portion of the reaction chamber and connected to the substrate mounting stage and configured to supply bias RF power, and a control unit configured to control on / off of the source RF power of the source RF plasma generator and the bias RF power of the bias RF power supply unit.

[0030] According to an embodiment of the present invention, the source RF plasma generator may include an RF power supply that supplies impedance-matched RF power to the plasma generation source, and a pulsed RF connected between the gas supply unit and the RF power supply.

[0031] Furthermore, according to an embodiment of the present invention, the bias RF power supply unit may include a bias RF power supply that supplies impedance-matched bias RF power to the substrate mounting table, and a pulsed RF power supply connected between the substrate mounting table and the bias RF power supply. [Effects of the Invention]

[0032] An atomic layer deposition method for filling gaps in high aspect ratio semiconductor structures according to one embodiment of the present invention not only removes inlet overhangs during deposition in high aspect ratio structures of 40:1 or greater, but also improves bottom-up deposition to perform gap filling so as to eliminate voids and seams.

[0033] Therefore, a separate heat treatment process can be omitted, and complicated processes such as deposition-etching-deposition are not required, thereby improving production efficiency in manufacturing semiconductor devices.

[0034] Furthermore, the present invention can fill gaps to eliminate voids and seams even in high aspect ratio structures with negative bow profiles, which were difficult to fill using conventional ALD methods. Therefore, the present invention can be applied to next-generation devices that require various structures.

[0035] In addition, the present invention is characterized in that bias power is used to remove such overhangs, and the bias power is pulsed.

[0036] The bias pulsation not only effectively removes overhangs at the entrance of high aspect ratio structures, but also removes voids and seams inside the structures, and has the effect of enabling a bottom-up process in which deposition can be performed from the bottom of the structure upward.

[0037] The effects of the present invention are not limited to the effects described above, but include all effects that can be inferred from the configuration of the invention described in the detailed description of the present invention or the claims. [Brief explanation of the drawings]

[0038] [Figure 1] 1 is a flow chart illustrating an atomic layer deposition method for filling gaps in high aspect ratio semiconductor features according to one embodiment of the present invention. [Figure 2] 1 is a schematic diagram illustrating an atomic layer deposition apparatus for filling gaps in high aspect ratio semiconductor structures according to one embodiment of the present invention. [Figure 3] 1 is a schematic diagram illustrating the results of deposition by an atomic layer deposition method for filling gaps in a high aspect ratio semiconductor structure according to one embodiment of the present invention. [Figure 4] 1 is an SEM image showing the results of Experimental Example 1. [Figure 5] 10 is an SEM image showing the results of Experimental Example 2. [Figure 6] 1 is a graph showing the results of Example 1. [Figure 7]1 is a graph showing the results of Example 2. [Figure 8] 1 is a graph showing the results of Example 3. [Figure 9] 1 is a graph showing the results of Example 4. [Figure 10] 1 is a graph showing the results of Example 5. [Figure 11] 1 is a graph showing the results of Example 6. [Figure 12] 1 is a graph showing the results of Example 7. [Figure 13] 1 is a graph showing the results of Example 8. [Figure 14] 10 is a graph showing the results of Example 9. [Figure 15] 1 is a graph showing the results of Example 10. [Figure 16] 1 is a graph showing the results of Example 11. [Figure 17] 1 is a graph showing the results of Example 12. [Figure 18] 1 is a graph showing the results of Example 13. [Figure 19] 1 is a graph showing the results of Example 14. [Figure 20] 1 is a graph showing the results of Example 15. [Figure 21] 1 is a graph showing the results of Example 16. [Figure 22] 1 is a graph showing the results of Example 17. [Figure 23] 1 is a graph showing the results of Example 18. [Figure 24] 1 is a graph showing the results of Example 19. [Figure 25] 1 is a graph showing the results of Example 20. [Figure 26] 1 is a graph showing the results of Example 21. DETAILED DESCRIPTION OF THE INVENTION

[0039] The present invention will now be described with reference to the accompanying drawings. However, the present invention may be embodied in various different forms and is not limited to the embodiments described herein. In addition, in order to clearly illustrate the present invention with the drawings, parts that are not relevant to the description will be omitted, and like parts will be designated by like reference numerals throughout the specification. Throughout this specification, when a part is said to be "connected (connected, contacted, or coupled)" to another part, this includes not only "directly connected" but also "indirectly connected" with another member interposed therebetween. Furthermore, when a part is said to "include" a certain component, this does not mean that it excludes other components, but that it may further include other components, unless otherwise specified. The terms used in this specification are used merely to describe specific embodiments and are not intended to limit the present invention. The singular expressions include the plural expressions unless the context clearly dictates otherwise. In this specification, the terms "comprise" or "have" are intended to specify the presence of features, numbers, steps, operations, components, parts, or combinations thereof described in the specification, and do not preclude the possibility of the presence or addition of one or more other features, numbers, steps, operations, components, parts, or combinations thereof.

[0040] Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. According to one embodiment of the present invention, an atomic layer deposition method for filling gaps in high aspect ratio semiconductor structures is described. 1 and 3, an atomic layer deposition method for filling gaps in high aspect ratio semiconductor structures is described. FIG. 1 is a flow chart illustrating an atomic layer deposition method for filling gaps in high aspect ratio semiconductor features according to one embodiment of the present invention.

[0041] Referring to FIG. 1 , an atomic layer deposition method for filling a gap in a high aspect ratio semiconductor structure according to an embodiment of the present invention may include a first step (S100) of loading a substrate having a gap formed therein into a reaction chamber; a second step (S200) of loading a precursor gas onto the substrate having the gap formed therein so that the precursor gas is adsorbed onto the substrate; a third step (S300) of supplying a process gas into the reaction chamber and applying a pulsed or non-pulsed source RF power to generate plasma in a reaction space above the substrate and applying a pulsed bias RF power; and a fourth step (S400) of controlling the on / off of the pulsed or non-pulsed source RF power and the pulsed bias RF power.

[0042] At this time, a defined ALD cycle step may be repeated until the gap is filled. The method may further include a step of purging the chamber between the second step and the third step. Also, the method may further include, after the fourth step, completing a plasma reaction with the surface on which the precursor gas is adsorbed and purging the chamber.

[0043] Atomic layer deposition (ALD) is a nano-thin film deposition technology that uses the phenomenon of chemical deposition of single atomic layers. It can deposit oxide or metal thin films on a substrate in atomic layer units, and has the advantage of being able to stack films with relatively thin thicknesses by changing the atomic composition.

[0044] In the ALD process, the substrate surface environment is gradually adjusted to form a self-saturated atomic layer of precursors, which then undergo a reaction on the surface. Due to the formation of self-saturated precursors, ALD allows for atomic-level thickness control, and the surface migration of precursor precursors enables the deposition of conformal thin films even on surfaces with complex shapes. ALD also minimizes gas-phase reactions, minimizing particle formation, resulting in high-density thin films and lower deposition temperatures. The first step may include a first step of loading a substrate having a gap formed therein into a reaction chamber (S100).

[0045] Although the present invention has been described with reference to an example in which the aspect ratio of the substrate pattern is 40:1, it is not limited thereto and can be fully applied to a high aspect ratio of 30:1 to 50:1.

[0046] Furthermore, the present invention is characterized by its ability to fill gaps in a substrate on which nanometer-level pattern gaps of 10 nm to 200 nm in size are formed, and is also applicable without restriction to gaps exceeding the size of 10 nm to 200 nm.

[0047] The second step may include a second step of introducing a precursor gas into the substrate having the gap formed thereon to adsorb the precursor gas onto the substrate (S200).

[0048] The precursor gas introduced in the present invention may include one or more selected from a group of Si-containing precursors, such as silane, TEOS, DIPAS, BDEAS, TDMAS, DCS, BTBAS, 3(d)MAS, TSA, NPS, DSBAS, PCDS, or HCDS, and is not limited to the above examples, as it varies depending on the type of material layer to be deposited.

[0049] For example, the precursor may be DIPAS. When the precursor is DIPAS, an SiO2 thin film can be formed by atomic layer deposition when one or more reactive gases selected from a group of reactive gases containing oxygen, such as O2, NO, N2O, and HO, are included.

[0050] Alternatively, the precursor gas may include a metal-based precursor such as tungsten (W) and titanium (Ti), or a dielectric-based precursor such as hafnium (Hf).

[0051] When the precursor is deposited as an atomic layer on the surface of the metal powder, it will not react any more even if more precursor is supplied due to a self-limiting reaction. After the precursor is adsorbed, a purging step may be included in which an inert gas is injected to remove unadsorbed precursor. The inert gas may be, but is not limited to, argon (Ar), nitrogen (N2), helium (He), and other gases. For example, the inert gas may be argon (Ar). The argon gas may be injected at a rate of 30 sccm for 10 seconds, for example. Purging with the inert gas may be performed to remove non-chemisorbed precursor material.

[0052] A third step may include supplying a process gas into the reaction chamber, applying a source RF power in a pulsed or non-pulsed manner to generate plasma in the reaction space above the substrate, and applying a bias RF power in a pulsed manner (S300). The process gas may vary depending on the type of material layer to be deposited.

[0053] For example, as an example of a process gas used in the process of the present invention, the process gas for the oxide film (SiO2 film) process may contain one or more selected from a group of gases containing oxygen, such as O2, NO, N2O, and HO, but any substance having the property of being able to contain oxygen and form an oxide film can be used.

[0054] In addition, the process gas for the nitride film (SixNy) process may include one or more selected from a group of gases containing nitrogen, such as N2, NO, N2O, and NH3, but any substance containing nitrogen and having the properties to form a nitride film can be used. Therefore, the process gases will vary depending on the type of material layer to be deposited and are not limited to the examples given above.

[0055] In this case, when the present invention is a process using a Si-based precursor, the process gas may be O2 or NH3. When the process gas is O2, a SiO2 thin film may be formed by atomic layer deposition, and when the process gas is NH3, a Si3N4 thin film may be formed by atomic layer deposition. In some cases, other elements that can exert an effect on the mixed gas may also be included.

[0056] For example, in the case of a process using a Si-based precursor, when depositing a thin film such as SiON, one or more gases selected from a group of gases containing oxygen, such as O, NO, N2O, and H2O, may be included, and at the same time, nitrogen-containing gases such as NH3, N2, NO, and N2O may be included and mixed or added.

[0057] In addition, inert gases such as He, Ne, Ar, Kr, Xe, etc. may be included to play a supporting role in contributing to the generation of plasma. Such inert gases can also assist the effect by causing a sputtering effect.

[0058] At this time, the source RF power according to the embodiment of the present invention can be applied in a pulsed or non-pulsed manner, and is characterized by generating plasma in the reaction space above the substrate.

[0059] The source RF power may be applied by equipment including an RF power (Source) that generates plasma and an RF power (Bias) that can generate negative DC through the supplied RF.

[0060] In this case, the RF power may be in the form of a capacitively coupled plasma (CCP) or an inductively coupled plasma (ICP), and other plasma sources such as microwave plasma and ECR plasma that can generate plasma are also possible. In this case, in the case of the CCP type, the RF power may be in a form in which a power supply is connected to an electrode such as an RF power.

[0061] The RF power may be generated from various plasma generating structures, including, but not limited to, pulsed plasma. Furthermore, in the present invention, bias power may be applied simultaneously with application of source RF power. The pulsed bias power may be supplied by direct connection to the substrate.

[0062] At this time, by pulsing the bias power, reactive ions can be efficiently supplied deep into the high aspect ratio structure due to the reduction in charge accumulation during the pulse off period.

[0063] In addition, the pulsing increases the diffusion of reactive radical species, thereby reducing the difference in deposition rate between the opening and the bottom of the high aspect ratio structure, thereby preventing overhangs.

[0064] Also, due to the effect of biasing, the high aspect ratio inlet is sputtered and the enlargement of the inlet can be maintained constant. This allows bottom-up deposition, in which deposition occurs from the bottom of a high aspect ratio structure.

[0065] In this case, the frequency of the RF power (Source) and the frequency of the RF power (Bias) may be 400 kHz to 300 MHz, and there are no restrictions on the frequency as long as they perform the roles of forming the plasma and the bias.

[0066] However, for example, in the case of a CCP type, the frequency of the RF power (Source) that serves to form the plasma may preferably be a relatively high frequency such as 13.56 MHz, 27.12 MHz, 60 MHz, or 100 MHz, and the frequency of the RF power (Bias) may preferably be a relatively low frequency such as 400 kHz, 2 MHz, or 13.56 MHz.

[0067] Furthermore, in addition to the source and bias power supplies, the present invention may also be combined with other additional pulsed power supplies, which can change the plasma state without restricting the RF power supply and can be effective in combination with related power supplies.

[0068] The fourth step may include controlling on / off of the pulsed or non-pulsed source RF power and the pulsed bias RF power (S400).

[0069] The present invention can propose various pulsing techniques by controlling the on / off states of the pulsed or non-pulsed source RF power and the pulsed bias RF power.

[0070] For example, when pulsed or non-pulsed source RF power is continuously applied at the same intensity and pulsed bias RF power is applied in an on-off state, if the pulsed source RF power is cut off, the pulsed bias RF power may or may not be cut off at the same time.

[0071] In addition, when pulsed or non-pulsed source RF power is applied in an on-off state and pulsed bias RF power is applied in an on-off state, and the pulsed source RF power is cut off, the pulsed bias RF power may or may not be cut off at the same time.

[0072] According to an embodiment of the present invention, power may be applied by further including a power supply device that can apply additional power in addition to the bias RF power, and simultaneously obtain the effect of a different frequency from that of the source RF power or the bias RF power. The additional power supply is not limited by RF frequency and may include DC power or AC power if it is effective.

[0073] Furthermore, when other additional power supplies are combined in addition to the source and bias power supplies, a pulsing method may be applied in which the application and interruption of each power supply is adjusted.

[0074] At this time, when the pulsing is performed, the power supply may not be completely turned off during the power-off stage, but may be supplied at a low power level, and the effects thereof may be combined. The above examples are detailed in Examples 1 to 21 and may be combined with various Advanced Pulsing techniques. FIG. 3 is a schematic diagram illustrating the results of deposition by an atomic layer deposition method for filling gaps in a high aspect ratio semiconductor structure according to one embodiment of the present invention.

[0075] 3(a) shows a state in which no deposition has been performed on the high aspect ratio semiconductor structure, FIG. 3(b) shows a state in which source RF power has been applied to the high aspect ratio semiconductor structure by the ALD method, FIG. 3(c) shows a state in which bias RF power has been applied to the high aspect ratio semiconductor structure by the ALD method, FIG. 3(d) shows a state in which high bias RF power has been applied to the high aspect ratio semiconductor structure by the ALD method, and FIG. 3(e) shows a state in which pulsed bias RF power has been applied to the high aspect ratio semiconductor structure by the ALD method.

[0076] Referring to FIG. 3, it can be seen that when pulsed bias RF power is applied, no voids, seams, or overhangs are formed, and the internal gaps are filled.

[0077] As a result, the atomic layer deposition method for filling gaps in high aspect ratio semiconductor structures according to one embodiment of the present invention not only removes inlet overhangs during deposition in high aspect ratio structures of 40:1 or greater, but also improves bottom-up deposition, thereby enabling gap filling to be performed so as to eliminate voids and seams.

[0078] In accordance with another embodiment of the present invention, an atomic layer deposition apparatus for filling gaps in high aspect ratio semiconductor features is described. FIG. 2 is a schematic diagram illustrating an atomic layer deposition apparatus for filling gaps in high aspect ratio semiconductor structures according to one embodiment of the present invention.

[0079] Referring to FIG. 2, an atomic layer deposition apparatus for filling gaps in a high aspect ratio semiconductor structure according to an embodiment of the present invention may include a reaction chamber 100 forming a reaction space, a substrate mounting table 110 installed inside the reaction chamber and on which a substrate is placed, a gas injection unit 200 for injecting precursors and process gases onto an upper portion of the substrate mounting table, a source RF plasma generator 300 installed at an upper portion of the reaction chamber and connected to the gas injection unit, a bias RF power supply unit 400 installed at a lower portion of the reaction chamber and connected to the substrate mounting table and for supplying bias RF power, and a control unit 500 for controlling on / off of the source RF power of the source RF plasma generator and the bias RF power of the bias RF power supply unit.

[0080] In this case, the source RF plasma generator may include an RF power source that supplies impedance-matched RF power to the plasma generation source, and a pulse RF connected between the gas supply unit and the RF power source.

[0081] An ALD apparatus according to one embodiment of the present invention is characterized in that a pulsed RF power supply that receives a signal supplied from the bias RF power supply and converts it into a pulse is provided between a bias RF power supply unit connected to a substrate mounting table and the bias matching circuit.

[0082] In this case, the bias RF power supply unit may include a bias RF power supply that supplies impedance-matched bias RF power to the substrate placing table, and a pulse RF connected between the substrate placing table and the bias RF power supply.

[0083] In the atomic layer deposition apparatus according to the embodiment of the present invention, a pulsed RF is provided between the bias RF power supply connected to the substrate stage and the bias matching circuit, which receives a signal supplied from the bias RF power supply and converts it into a pulse. When pulsed RF is provided in this manner, the RF power output from the bias RF power supply is converted into a pulse, and is applied to the substrate stage via a bias matching circuit. The bias RF power applied to the substrate stage is periodically turned to a bias RF on state or a bias RF off state by a pulse RF.

[0084] At this time, when the bias RF is on, the ions are instantaneously accelerated, increasing the amount of ions incident on the substrate w, whereas when the bias RF is off, the ions are not accelerated, and the amount of ions accelerated to the substrate w is almost zero.

[0085] In the bias RF on state, highly accelerated ions are incident on the gap and opening of the substrate w, and deposition is actively carried out, which increases the pressure inside the gap and reduces the number of ions incident on the gap.

[0086] On the other hand, in the bias RF OFF state, the amount of ions accelerated to the substrate w is almost zero, and the pressure at the gap opening is low, so that by-products inside the gap are expelled to the outside.

[0087] The present invention will be described in more detail below through preparation examples and experimental examples. These preparation examples and experimental examples are merely for the purpose of illustrating the present invention, and the scope of the present invention is not limited by these preparation examples and experimental examples. Manufacturing Example 1: Fabrication of a high aspect ratio semiconductor device with gaps filled by atomic layer deposition to fill gaps in a high aspect ratio semiconductor structure [Figure 5] First, a semiconductor substrate on which a pattern having gaps of 60 nm and 100 nm was formed was placed in a reaction chamber.

[0088] Next, a DIPAS precursor gas was introduced into the semiconductor substrate with the gap formed thereon for 1 second under conditions of a chamber pressure of 2 Torr and a substrate temperature of 200° C., so that the precursor gas was adsorbed onto the substrate. Next, a purge was carried out for 5 seconds to remove any unadsorbed precursor.

[0089] Next, a process gas composed of Ar gas and O gas was supplied into the reaction chamber at a flow rate of 500 sccm each, and a 60 MHz RF power with a source RF power of 1000 W was supplied to the upper electrode to generate plasma in the reaction space. A 400 kHz RF power with a bias RF power of 40 W was applied to the lower electrode in a pulsed manner.

[0090] At this time, a specific method for controlling the on / off of the pulsed bias RF power will be described in detail later in [Experimental Example 2]. Next, a purge was carried out for 5 seconds to remove any unadsorbed precursor.

[0091] By performing the process in this one-cycle format and particularly controlling the on / off of the source RF power and pulsed bias RF power, a semiconductor device with a high aspect ratio in which the gap is filled is manufactured.

[0092] Manufacturing Example 2 The following Examples 1 to 21 show that, by adapting the above-mentioned Manufacturing Example 1 and further including an additional pulsed RF power supply device and applying other RF control methods based on bias pulse power, it is possible to present an improved process in which the effects of these methods are combined.

[0093] Example 1 FIG. 6 is a graph showing the results of Example 1.

[0094] Referring to FIG. 6, a pulsed source RF power was continuously applied at a constant power of -50V to generate plasma, and a pulsed bias RF power was applied with an intensity sufficient to form a bias, with a pulse duty ratio of 1% to 100% during on-off. The pulse duty ratio means pulse on time / total time.

[0095] Example 2 FIG. 7 is a graph showing the results of Example 2.

[0096] Referring to FIG. 7, the pulsed source RF power was continuously applied at a constant intensity to generate plasma, and the pulsed bias RF power was continuously applied, with the power repeatedly adjusted from an intensity of −50 V at which a bias could be formed to an intensity below −50 V at which a bias could be formed.

[0097] Example 3 FIG. 8 is a graph showing the results of Example 3.

[0098] Referring to FIG. 8, the pulsed source RF power was continuously applied at a constant intensity to generate plasma, and the pulsed bias RF power was applied at an intensity sufficient to form a bias, with a pulse duty ratio of 1% to 100% during on-off. An additional RF power supply was continuously applied at an intensity sufficient to demonstrate the effect of the additional frequency.

[0099] Example 4 FIG. 9 is a graph showing the results of Example 4.

[0100] Referring to FIG. 9, the pulsed source RF power was continuously applied at a constant intensity to generate plasma, and the pulsed bias RF power was continuously applied, but the power was repeatedly adjusted from an intensity of −50 V at which a bias could be formed to an intensity below −50 V at which a bias could be formed, and an additional RF power supply was continuously applied at an intensity at which the effect of the additional frequency could be demonstrated.

[0101] Example 5 FIG. 10 is a graph showing the results of Example 5.

[0102] Referring to FIG. 10, the pulsed source RF power was applied to generate plasma at a constant power intensity of -50V with a pulse duty ratio of 1% to 100% during on-off. Simultaneously, pulsed bias RF power was applied at an intensity of -50V capable of forming a bias with a pulse duty ratio of 1% to 100% during on-off. At this time, the pulsed source RF power and the pulsed bias RF power were simultaneously applied and cut off.

[0103] Example 6 FIG. 11 is a graph showing the results of Example 6.

[0104] Referring to FIG. 11, the pulsed source RF power was continuously applied at a constant power intensity of −50V to generate plasma, but the power was repeatedly adjusted from a high intensity of −50V at which a source could be formed to an intensity below −50V at which a source could be formed. Pulsed bias RF power was continuously applied, but the power was repeatedly adjusted from a high intensity of −50V at which a bias could be formed to a low intensity below −50V at which a bias could be formed. At this time, the pulsed source RF power and the pulsed bias RF power were simultaneously applied at high power and low power.

[0105] Example 7 FIG. 12 is a graph showing the results of Example 7.

[0106] Referring to FIG. 12, the pulsed source RF power was used to generate plasma and had a constant power intensity of -50V with a pulse duty ratio of 1% to 100% during on-off operation. The pulsed bias RF power was used to generate plasma and had a constant power intensity of -50V with a pulse duty ratio of 1% to 100% during on-off operation. An additional pulsed RF power supply for plasma generation was also used to generate plasma and had a constant power intensity of -50V with a pulse duty ratio of 1% to 100% during on-off operation. The pulsed source RF power, pulsed bias RF power, and additional pulsed RF power supplies were simultaneously turned on and off.

[0107] Example 8 FIG. 13 is a graph showing the results of Example 8.

[0108] Referring to FIG. 9, the pulsed source RF power was continuously applied at a constant power intensity of −50V to generate plasma, but the power was repeatedly adjusted from an intensity of −50V sufficient to form a source to an intensity below −50V sufficient to form a source. Pulsed bias RF power was continuously applied, but the power was repeatedly adjusted from an intensity of −50V sufficient to form a bias to an intensity below −50V sufficient to form a bias. An additional plasma power pulsed RF power supply was applied at a constant power intensity of −50V to generate plasma. The pulsed source RF power and pulsed bias RF power, additional pulsed RF power supply, were applied at high power and low power simultaneously.

[0109] Example 9 FIG. 14 is a graph showing the results of Example 9.

[0110] Referring to FIG. 14, the pulsed source RF power was applied to generate plasma with a constant power intensity of -50V and a pulse duty ratio of 1% to 100% during on-off. The pulsed bias RF power was applied to generate plasma with a constant power intensity of -50V and a pulse duty ratio of 1% to 100% during on-off.

[0111] When the pulsed source RF power was applied, the pulsed bias RF power was cut off, and when the pulsed source RF power was cut off, the pulsed bias RF power was applied.

[0112] Example 10 FIG. 15 is a graph showing the results of Example 10.

[0113] Referring to FIG. 15, the pulsed source RF power was continuously applied at a constant power intensity of −50V to generate plasma, but the power was repeatedly adjusted from an intensity of −50V at which a source could be formed to a low intensity below −50V at which a source could be formed; pulsed bias RF power was continuously applied, but the power was adjusted from an intensity high enough to form a bias to an intensity low enough to form a bias; and an additional plasma power pulsed RF power supply was applied at a constant power intensity to generate plasma, while repeatedly adjusting the power intensity.

[0114] When the pulsed source RF power was applied at a high intensity, the pulsed source RF power was applied at a low intensity, and when the pulsed source RF power was applied at a low intensity, the pulsed source RF power was applied at a high intensity.

[0115] Example 11 FIG. 16 is a graph showing the results of Example 11.

[0116] Referring to FIG. 16, the pulsed source RF power was applied as a plasma generating power with a constant power intensity of -50V and a pulse duty ratio of 1% to 100% during on-off operation. The pulsed bias RF power was applied as a plasma generating power with a constant power intensity of -50V and a pulse duty ratio of 1% to 100% during on-off operation. An additional pulsed RF power supply was applied as an additional power with a constant power intensity and a pulse duty ratio of 1% to 100% during on-off operation. At this time, the sum of the duty ratios of the source RF power supply units, the bias RF power supply unit, and the additional RF power supply unit is 100%.

[0117] When the pulsed source RF power is applied, the pulsed bias RF power and the additional pulsed RF power supply are simultaneously turned off, when the pulsed bias RF power is applied, the pulsed source RF power and the additional pulsed RF power supply are simultaneously turned off, applied and turned off simultaneously, and when the additional pulsed RF power supply is applied, the pulsed source RF power and the pulsed bias RF power are simultaneously turned off.

[0118] Example 12 FIG. 17 is a graph showing the results of Example 12.

[0119] Referring to FIG. 17, the pulsed source RF power was continuously applied at a constant intensity of −50V to generate plasma, but the power was repeatedly adjusted from a high intensity of −50V at which a source could be formed to a low intensity of −50V or less at which a source could be formed; pulsed bias RF power was continuously applied, but the power was adjusted from a high intensity of −50V at which a bias could be formed to a low intensity of −50V or less at which a bias could be formed; and an additional pulsed RF power supply was continuously applied as additional power at a constant power intensity, but the power was repeatedly adjusted from a high intensity of −50V at which a plasma could be formed to a low intensity of −50V or less at which a plasma could be formed. The sum of the duty cycles of each source, bias, and additional RF power supplies, with the reference power supply on at high intensity, is 100%.

[0120] When the pulsed source RF power is applied at a high intensity, the pulsed bias RF power and the additional pulsed RF power supply are applied at a low intensity; when the pulsed bias RF power is applied at a high intensity, the pulsed source RF power and the additional pulsed RF power supply are applied at a low intensity; when the additional pulsed RF power supply is applied at a high intensity, the pulsed source RF power and the pulsed bias RF power are applied at a low intensity.

[0121] Example 13 FIG. 18 is a graph showing the results of Example 13.

[0122] Referring to FIG. 18, the pulsed source RF power was applied to generate plasma at a constant power intensity of -50V with a pulse duty ratio of 1% to 100% during on-off operation, and the pulsed bias RF power was applied to generate plasma at a constant power intensity of -50V with a pulse duty ratio of 1% to 100% during on-off operation.

[0123] When the pulsed source RF power was applied, the pulsed bias RF power was applied overlapping for a time period corresponding to 1% to 100% of the on time of the pulse duty ratio.

[0124] Example 14 FIG. 19 is a graph showing the results of Example 14.

[0125] Referring to FIG. 19, the pulsed source RF power, which serves to generate plasma, is applied with a constant power intensity of -50 V and a pulse duty ratio of 1% to 100% during on-off. The pulsed bias RF power, which serves to generate plasma, is applied with a constant power intensity of -50 V and a pulse duty ratio of 1% to 100% during on-off. Both the pulsed source RF power and the pulsed bias RF power may have Off-time-1 (separation time) during the pulse duty ratio. The separation time is a period during which both the source RF power and the pulsed bias RF power are turned off. Off-time-2 may also be included. Off-time-2 is a period during which both the source RF power and the pulsed bias RF power are turned off.

[0126] Example 15 FIG. 20 is a graph showing the results of Example 15.

[0127] 20, the pulsed source RF power was applied to generate plasma with a constant power intensity of -50V and a pulse duty ratio of 1% to 100% during on-off. The pulsed bias RF power was also applied to generate plasma with a constant power intensity of -50V and a pulse duty ratio of 1% to 100% during on-off. The pulsed source RF power was first turned on from 1% to 99%, then overlapped with the bias power pulse for a certain period, and then both were turned off at the same time. When the pulsed source RF power was applied, the pulsed bias RF power was applied overlapping for a period of 1% to 100% of the on-start time of the pulse duty ratio.

[0128] Example 16 FIG. 21 is a graph showing the results of Example 16.

[0129] 21, the pulsed source RF power was applied to generate plasma with a constant power intensity of -50V and a pulse duty ratio of 1% to 100% during on-off. The pulsed bias RF power was also applied to generate plasma with a constant power intensity of -50V and a pulse duty ratio of 1% to 100% during on-off. When the pulsed source RF power was applied, the pulsed source RF power remained on by 1% to 100% even after the bias power was turned off. Examples 15 and 16 were conducted under identical experimental conditions, except for the intervals during which the on-times of the pulse duty ratios did not overlap.

[0130] Example 17 FIG. 22 is a graph showing the results of Example 17.

[0131] 22, the pulsed source RF power, which serves to generate plasma, is applied with a constant power intensity of -50 V and a pulse duty ratio of 1% to 100% during on-off. The pulsed bias RF power, which serves to generate plasma, is applied with a constant power intensity of -50 V and a source pulse duty ratio of 1% to 100% during on-off. When the pulsed source RF power is applied, the pulsed bias RF power can be turned on 1% to 99% earlier. Therefore, in some sections, the source RF power pulse and the bias RF power pulse overlap and are turned off simultaneously.

[0132] Example 18 FIG. 23 is a graph showing the results of Example 18.

[0133] 23, the pulsed source RF power was applied to generate plasma with a constant power intensity of -50V and a pulse duty ratio of 1% to 100% during on-off. The pulsed bias RF power was also applied to generate plasma with a constant power intensity of -50V and a pulse duty ratio of 1% to 100% during on-off. When the pulsed source RF power was applied, the pulsed bias RF power was also applied independently for a time period of 1% to 100% after the end of the source RF power pulse. Examples 17 and 18 were conducted under identical experimental conditions, except for the intervals during which the on-times of the pulse duty ratios did not overlap.

[0134] Example 19 FIG. 24 is a graph showing the results of Example 19.

[0135] Referring to FIG. 6, a pulsed source RF power was applied continuously at a constant power intensity of -50V to generate plasma, and a pulsed bias RF power was applied at a constant power intensity of -50V to generate plasma, with a pulse duty ratio of 1% to 100% during on-off.

[0136] The operating intensity of the bias RF power was adjusted by continuously applying pulsed bias RF power, adjusting the power to a high intensity of −50 V capable of forming a bias (on-1), adjusting the power from the high intensity capable of forming a bias to an intermediate intensity capable of forming a bias (on-2), and adjusting the power from the intermediate intensity capable of forming a bias to an intensity lower than the intermediate power intensity capable of forming a bias (on-3).

[0137] Example 20 FIG. 25 is a graph showing the results of Example 20.

[0138] 25, the pulsed source RF power, which serves to generate plasma, is applied with a constant power intensity of -50 V and a pulse frequency of 13.56 MHz to 130 MHz with a pulse duty ratio of 1% to 100% during on-off, and the pulsed bias RF power, which serves to generate plasma, is applied with a constant power intensity of -50 V and a pulse frequency of 13.56 MHz to 130 MHz with a pulse duty ratio of 1% to 100% during on-off. In this case, the bias pulse frequency may be higher than the source pulse frequency.

[0139] Example 21 FIG. 26 is a graph showing the results of Example 21.

[0140] 26, the pulsed source RF power, which serves to generate plasma, is applied with a constant power intensity of -50 V, a pulse frequency of 13.56 MHz to 130 MHz, and a pulse duty ratio of 1% to 100% during on-off operation. The pulsed bias RF power, which serves to generate plasma, is applied with a constant power intensity of -50 V, a frequency of 13.56 MHz to 130 MHz, and a pulse duty ratio of 1% to 100% during on-off operation. The bias pulse frequency may be n times or more higher than the source pulse frequency. When the pulsed source RF power is shut off, the pulsed bias RF power is also shut off simultaneously.

[0141] Experimental Example 1: Results of ALD 300 Cycles with Different Bias Power Intensities FIG. 4 is an SEM image showing the results of Experimental Example 1. Figure 4 shows SEM images of the results of 300 ALD cycles to confirm the effect of bias power intensity on ALD.

[0142] As shown in Figures 4(a) and 4(b) above, experimental results show that when ALD is performed without bias power, overhangs occur at the entrance of high aspect ratio structures, and seams occur in 60 nm line patterns.

[0143] Figure 4(b) above shows the results when gap filling was performed with a 100 nm line pattern, and it can be seen that an overhang occurred at the entrance. The experiments shown in Figures 4(c) and 4(d) above were performed by applying a bias of 40 W, which is a relatively low bias power intensity. As shown in Figure 4(c) above, it can be seen that a seam occurred in the 60 nm line pattern. Figure 4(d) shows that gap filling was insufficient in the 100 nm line pattern, resulting in overhangs. Referring to Figures 4(c) and 4(d), when the process is performed for 500 cycles, the results are shown in Figures 5(g) and 5(h), respectively. As a result, it can be seen that the 60 nm lines have very large seams and the 100 nm lines have voids.

[0144] In addition, Figures 4(e) and 4(f) show the results of ALD performed with a relatively high bias power of 150 W. Not only did overhangs occur, but the high bias also caused the redeposition of the cracked material at the inlet side, blocking the upper pattern and forming severe voids.

[0145] Therefore, it was confirmed through the above Experimental Example 1 that it is preferable to apply a relatively low bias power of 40 W intensity, and thus, the presence of a bias is more advantageous for gap filling than the absence of a bias. However, limitations to this have been identified and additional control measures utilizing bias pulses are required.

[0146] Also, when the bias is too high, as in the example of 150W intensity, it is clear that there is a limit to the effect of the bias due to the fact that the cracked material on the inlet side is re-deposited due to the high bias.

[0147] Experimental Example 2: ALD Results Depending on the Pulse Duty Ratio of the Bias Pulse FIG. 5 is an SEM image showing the results of Experimental Example 2. Figure 5 shows the results of an example of the use of ALD depending on the pulse duty ratio of the bias pulse.

[0148] Referring to FIG. 5, it can be seen that by using a bias pulse, improved gap filling was achieved in FIGS. 5(a) to 5(f) compared to FIGS. 5(g) and 5(h).

[0149] In addition, as the pulse duty ratio is reduced, the pulse duty ratio for the 100 nm line in Figures 5(e) and 5(f) is 75%, that for Figures 5(c) and 5(d) is 50%, and that for Figures 5(a) and 5(b) is 30%. As the pulse duty ratio decreases to 30%, a better gap filling effect is observed, and as charge accumulation decreases and diffusion increases, reactants (gas particles) penetrate deep into the pattern. At the same time, by applying bias power, the gap entrance opens vertically and deposition occurs.

[0150] Also, referring to Figures 5(h), 5(f), 5(d), and 5(b), where the gap width is 100 nm, as the pulse duty ratio decreases, the upper part of the pattern is partially blocked, and the pattern has a curved shape (negative bowing, as shown in Figure 3(a)). This indicates that the insulating film (SiO2) is deposited vertically on the inner wall surface of the gap, thereby successfully filling the gap. The manufacturing process shown in FIG. 5 is the result of various pulse duty ratios under the conditions of Manufacturing Example 1.

[0151] The above description of the present invention is for illustrative purposes only, and those skilled in the art will understand that the present invention can be easily modified into other specific forms without changing the technical spirit or essential features of the present invention. Therefore, the above-described embodiments are illustrative in all respects and are not limiting. For example, each component described as a single component may be implemented in a distributed form, and similarly, each component described as a distributed form may be implemented in a combined form. The scope of the present invention is defined by the claims that follow, and all modifications and variations that fall within the meaning and scope of the claims and their equivalents are intended to be included within the scope of the present invention. [Explanation of symbols]

[0152] 100: Chamber 110: Board mounting stand 200: Gas injection unit 300: RF plasma generator for source 400: Bias RF power supply section 500: Control unit

Claims

1. A first step of loading a substrate having a gap formed therein into a reaction chamber; a second step of introducing a precursor gas into the substrate having the gap formed thereon to allow the precursor gas to be adsorbed onto the substrate; a third step of supplying a process gas into the reaction chamber, applying a source RF power in a pulsed or non-pulsed manner to generate plasma in a reaction space above the substrate, and applying a bias RF power in a pulsed manner; a fourth step of controlling on / off of the pulsed or non-pulsed source RF power and the pulsed bias RF power; In the fourth step, The pulsed or non-pulsed source RF power is continuously applied at the same intensity, and the pulsed bias RF power is continuously applied with its intensity adjusted.

1. An atomic layer deposition method for filling gaps in high aspect ratio semiconductor structures, comprising:

2. A first step of loading a substrate having a gap formed therein into a reaction chamber; a second step of introducing a precursor gas into the substrate having the gap formed thereon to allow the precursor gas to be adsorbed onto the substrate; a third step of supplying a process gas into the reaction chamber, applying a source RF power in a pulsed or non-pulsed manner to generate plasma in a reaction space above the substrate, and applying a bias RF power in a pulsed manner; a fourth step of controlling on / off of the pulsed or non-pulsed source RF power and the pulsed bias RF power; In the fourth step, The pulsed or non-pulsed source RF power is continuously applied with its intensity adjusted, and the pulsed bias RF power is continuously applied with its intensity adjusted.

1. An atomic layer deposition method for filling gaps in high aspect ratio semiconductor structures, comprising:

3. A first step of loading a substrate having a gap formed therein into a reaction chamber; a second step of introducing a precursor gas into the substrate having the gap formed thereon to allow the precursor gas to be adsorbed onto the substrate; a third step of supplying a process gas into the reaction chamber, applying a source RF power in a pulsed or non-pulsed manner to generate plasma in a reaction space above the substrate, and applying a bias RF power in a pulsed manner; a fourth step of controlling on / off of the pulsed or non-pulsed source RF power and the pulsed bias RF power; In the fourth step, applying the pulsed source RF power in an on-off state and applying a pulsed bias RF power in an on-off state; In addition, the pulsed or non-pulsed source RF power and the pulsed bias RF power are simultaneously applied and cut off.

1. An atomic layer deposition method for filling gaps in high aspect ratio semiconductor structures, comprising:

4. A first step of loading a substrate having a gap formed therein into a reaction chamber; a second step of introducing a precursor gas into the substrate having the gap formed thereon to allow the precursor gas to be adsorbed onto the substrate; a third step of supplying a process gas into the reaction chamber, applying a source RF power in a pulsed or non-pulsed manner to generate plasma in a reaction space above the substrate, and applying a bias RF power in a pulsed manner; a fourth step of controlling on / off of the pulsed or non-pulsed source RF power and the pulsed bias RF power; In the fourth step, applying the pulsed source RF power in an on-off state and applying a pulsed bias RF power in an on-off state; Furthermore, when the pulsed or non-pulsed source RF power is applied, the pulsed bias RF power is cut off, and when the pulsed source RF power is cut off, the pulsed bias RF power is applied.

1. An atomic layer deposition method for filling gaps in high aspect ratio semiconductor structures, comprising:

5. Between the second step and the third step, Further comprising the step of purging the chamber.

5. An atomic layer deposition method for filling gaps in high aspect ratio semiconductor structures according to any one of claims 1 to 4.

6. After the fourth step, Further comprising purging the chamber.

5. An atomic layer deposition method for filling gaps in high aspect ratio semiconductor structures according to any one of claims 1 to 4.

7. In the fourth step, The pulsed or non-pulsed source RF power is continuously applied at the same intensity, and the pulsed bias RF power is applied in an on / off state.

10. The atomic layer deposition method for filling gaps in high aspect ratio semiconductor structures according to claim 1.

8. The pulse duty ratio of the pulsed bias RF power when it is turned on and off is 1% to 100%.

8. The atomic layer deposition method for filling gaps in high aspect ratio semiconductor structures according to claim 7.

9. In the third step, The bias RF power applied is 5 W to 500 W.

5. An atomic layer deposition method for filling gaps in high aspect ratio semiconductor structures according to any one of claims 1 to 4.

10. In the fourth step, When the gap is filled with a deposit of the deposition process gas, the application of the pulsed source RF power and the pulsed bias RF power is stopped.

5. An atomic layer deposition method for filling gaps in high aspect ratio semiconductor structures according to any one of claims 1 to 4.

11. In the third step, An additional power supply is further included to apply power in addition to the bias RF power.

5. An atomic layer deposition method for filling gaps in high aspect ratio semiconductor structures according to any one of claims 1 to 4.

12. The atomic layer deposition method for filling gaps in the high aspect ratio semiconductor structure is carried out at a temperature between 0° C. and 500° C.

5. An atomic layer deposition method for filling gaps in high aspect ratio semiconductor structures according to any one of claims 1 to 4.

13. a reaction chamber forming a certain reaction space; a substrate stage provided inside the reaction chamber and on which a substrate is placed; a gas injection unit that injects a precursor and a process gas onto an upper portion of the substrate mounting table; a source RF plasma generator provided at an upper portion of the reaction chamber and connected to a gas injection unit; a bias RF power supply unit provided at a lower portion of the reaction chamber, connected to a substrate mounting table, and configured to supply bias RF power; a control unit that controls on / off of the source RF power of the source RF plasma generating unit and the bias RF power of the bias RF power supply unit, In the control unit, The pulsed or non-pulsed source RF power is continuously applied at the same intensity, and the pulsed bias RF power is continuously applied with its intensity adjusted.

1. An atomic layer deposition apparatus for filling gaps in high aspect ratio semiconductor structures, comprising:

14. a reaction chamber forming a certain reaction space; a substrate stage provided inside the reaction chamber and on which a substrate is placed; a gas injection unit that injects a precursor and a process gas onto an upper portion of the substrate mounting table; a source RF plasma generator provided at an upper portion of the reaction chamber and connected to a gas injection unit; a bias RF power supply unit provided at a lower portion of the reaction chamber, connected to a substrate mounting table, and configured to supply bias RF power; a control unit that controls on / off of the source RF power of the source RF plasma generating unit and the bias RF power of the bias RF power supply unit, In the control unit, The pulsed or non-pulsed source RF power is continuously applied with its intensity adjusted, and the pulsed bias RF power is continuously applied with its intensity adjusted.

1. An atomic layer deposition apparatus for filling gaps in high aspect ratio semiconductor structures, comprising:

15. a reaction chamber forming a certain reaction space; a substrate stage provided inside the reaction chamber and on which a substrate is placed; a gas injection unit that injects a precursor and a process gas onto an upper portion of the substrate mounting table; a source RF plasma generator provided at an upper portion of the reaction chamber and connected to a gas injection unit; a bias RF power supply unit provided at a lower portion of the reaction chamber, connected to a substrate mounting table, and configured to supply bias RF power; a control unit that controls on / off of the source RF power of the source RF plasma generating unit and the bias RF power of the bias RF power supply unit, In the control unit, applying the pulsed source RF power in an on-off state and applying a pulsed bias RF power in an on-off state; In addition, the pulsed or non-pulsed source RF power and the pulsed bias RF power are simultaneously applied and cut off.

1. An atomic layer deposition apparatus for filling gaps in high aspect ratio semiconductor structures, comprising:

16. a reaction chamber forming a certain reaction space; a substrate stage provided inside the reaction chamber and on which a substrate is placed; a gas injection unit that injects a precursor and a process gas onto an upper portion of the substrate mounting table; a source RF plasma generator provided at an upper portion of the reaction chamber and connected to a gas injection unit; a bias RF power supply unit provided at a lower portion of the reaction chamber, connected to a substrate mounting table, and configured to supply bias RF power; a control unit that controls on / off of the source RF power of the source RF plasma generating unit and the bias RF power of the bias RF power supply unit, In the control unit, applying the pulsed source RF power in an on-off state and applying a pulsed bias RF power in an on-off state; Furthermore, when the pulsed or non-pulsed source RF power is applied, the pulsed bias RF power is cut off, and when the pulsed source RF power is cut off, the pulsed bias RF power is applied.

1. An atomic layer deposition apparatus for filling gaps in high aspect ratio semiconductor structures, comprising:

17. The source RF plasma generating unit includes: an RF power supply that supplies impedance-matched RF power to the plasma generation source; a pulsed RF connected between the gas supply and the RF power source.

17. An atomic layer deposition apparatus for filling gaps in high aspect ratio semiconductor structures according to any one of claims 13 to 16.

18. The bias RF power supply unit includes: a bias RF power supply that supplies impedance-matched bias RF power to the substrate mounting table; a pulsed RF power source connected between the substrate stage and the bias RF power source.

17. An apparatus for forming an insulating layer in a gap of a high aspect ratio semiconductor structure according to any one of claims 13 to 16.

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