Wafer bearing chuck and semiconductor process chamber

Abstract

Disclosed in the present application is a wafer bearing chuck. The wafer bearing chuck comprises a chuck base part, a functional layer and a first conductive pin, the functional layer being stacked on the chuck base part; the chuck base part is a conductive structure member; a first end of the first conductive pin is elastically and electrically connected to the chuck base part, and a second end of the first conductive pin passes through the functional layer and protrudes out of the wafer bearing surface of the functional layer facing away from the chuck base part; when the wafer bearing chuck bears a wafer, the first conductive pin is used for being pressed down by the wafer, so that the wafer is supported on the wafer bearing surface. Further disclosed in the present application is a semiconductor process chamber.

Description

Wafer carrier chuck and semiconductor process chamber Technical Field

[0001] This application belongs to the field of semiconductor technology, specifically relating to a wafer carrier chuck and a semiconductor process chamber. Background Technology

[0002] A wafer carrier chuck is a device used in semiconductor manufacturing processes to fix and support wafers. Wafer carrier chucks prevent wafer shifting or misalignment during the process, thus achieving better process results.

[0003] Ion implantation is an additive process that uses a high-energy charged ion beam to embed dopant atoms into a wafer. In the specific process, an externally applied radio frequency (RF) voltage is applied to the back side of the wafer to create a bias electric field that drives the charged ion beam. This requires conductive components to contact the back side of the wafer to achieve RF power injection. This contact also supports the wafer. However, determining the exact height of the conductive components protruding from the wafer chuck makes it difficult to balance the support of the wafer bearing surface of the chuck with the conductive contact of the components. In such cases, unstable wafer support or unstable RF power injection often occurs. Summary of the Invention

[0004] This application discloses a wafer carrier chuck and a semiconductor process chamber to solve the problem that wafer carrier chucks in related technologies have difficulty in simultaneously supporting the wafer and injecting radio frequency power into conductive components.

[0005] To solve the above-mentioned technical problems, this application provides the following technical solution:

[0006] In a first aspect, embodiments of this application disclose a wafer carrier chuck, the disclosed wafer carrier chuck including a chuck base, a functional layer and a first conductive pin, the functional layer being stacked on the chuck base;

[0007] The chuck base is a conductive structural component. The first end of the first conductive pin is elastically electrically connected to the chuck base. The second end of the first conductive pin passes through the functional layer and protrudes from the wafer bearing surface of the functional layer opposite to the chuck base.

[0008] When the wafer carrier chuck carries the wafer, the first conductive pin is used to be pressed down by the wafer so that the wafer is supported on the wafer carrier surface.

[0009] Secondly, embodiments of this application disclose a semiconductor process chamber. The disclosed semiconductor process chamber includes a chamber body and the wafer carrier chuck described in the first aspect. The chamber body is provided with a process space, and the wafer carrier chuck is disposed in the process space.

[0010] The technical solution adopted in this application can achieve the following technical effects:

[0011] The wafer carrier chuck disclosed in this application improves the structure of wafer carrier chucks in related technologies by making an elastic electrical connection between the first end of the first conductive pin and the base of the chuck. This allows the first conductive pin to sink under the weight of the wafer while it is carrying the wafer, until the wafer is positioned where it can be supported by both the wafer carrier surface and the second end of the first conductive pin. In this configuration, the wafer will not fail to support the wafer carrier surface due to the second end of the first conductive pin being too high, nor will it fail to make conductive contact with the first conductive pin due to the wafer carrier surface being higher than the second end of the first conductive pin. Ultimately, this design balances wafer support and the conductive contact required for ion implantation during the process, ensuring the normal operation of the process. Attached Figure Description

[0012] Figure 1 is a schematic diagram of the structure of the wafer carrier chuck disclosed in an embodiment of this application;

[0013] Figure 2 is a partial cross-sectional view of the wafer carrier chuck disclosed in an embodiment of this application;

[0014] Figure 3 is a schematic diagram of the wafer carrier chuck disclosed in an embodiment of this application from a different perspective;

[0015] Figure 4 is a partial cross-sectional view of the wafer carrier chuck disclosed in an embodiment of this application;

[0016] Figure 5 is a partial cross-sectional view of the wafer carrier chuck disclosed in an embodiment of this application;

[0017] Figure 6 is a schematic diagram of the wafer carrier chuck disclosed in an embodiment of this application from another perspective;

[0018] Figure 7 is a schematic diagram of the structure of the semiconductor process chamber disclosed in the embodiments of this application.

[0019] Explanation of reference numerals in the attached drawings: 10-Chuck base, 11-Receiving hole, 12-Second protrusion, 121-First annular stepped surface, 13-First through hole, 14-Second threaded hole, 15-First receiving groove, 16-Third threaded hole, 17-Second receiving groove, 20-Insulating layer, 21-Second through hole, 22-Fourth through hole, 30-Electrostatic adsorption electrode, 31-Third through hole, 32-Wafer support bump, 33-Fifth through hole, 34-Annular groove, 35-Radial groove, 40-First electrical connection part, 41-Second end, 411-First threaded hole, 42-First end, 50-Second electrical connection part, 51-Electrical connection body, 52-Second positioning protrusion. 01-First annular space, 02-Annular gap, 03-Second annular space, 04-Ventilation hole, 05-Wafer, 06-Adhesive layer, 07-Sealing ring, 08-Ejector pin hole, 09-Ventilation groove, 010-Pad, 60-Buffer, 61-Annular part, 62-Second annular stepped surface, 63-End face, 631-Middle annular plane, 632-Annular concave surface, 70-Adhesive part, 80-Sealing ring, 91-First conductive pin, 92-First elastic element, 921-Elastic washer part, 93-First external threaded sleeve, 94-Threaded fastener, 941-Nut part, 942-Screw part, 95-Second conductive pin, 951-Overlapping surface, 96-Second threaded sleeve, 97-Threaded cap, 98-Rising ejector pin, 100 - Chamber body, 110 - Process space, 200 - Wafer carrier chuck. Detailed Implementation

[0020] To make the objectives, technical solutions, and advantages of this application clearer, the technical solutions of this application will be clearly and completely described below in conjunction with specific embodiments and corresponding drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of them. All other embodiments obtained by those skilled in the art based on the embodiments of this application without creative effort are within the scope of protection of this application.

[0021] The technical solutions disclosed in the various embodiments of this application are described in detail below with reference to the accompanying drawings.

[0022] Please refer to Figures 1 to 7. This application discloses a wafer carrier chuck, which is used to carry wafer 05 for processing and is part of a semiconductor process chamber. The wafer carrier chuck disclosed in this application can be an electrostatic chuck, a mechanical chuck, a vacuum chuck, etc., and this application does not limit the specific type of wafer carrier chuck. The wafer carrier chuck disclosed in this application can be used for semiconductor processes such as ion implantation, etching, and deposition, and this application does not limit the specific use of the wafer carrier chuck.

[0023] The wafer carrier chuck disclosed in this application includes a chuck base 10, a functional layer, and a first conductive pin 91.

[0024] The chuck base 10 is the fundamental part of the wafer carrier chuck. The chuck base 10 provides a mounting base for the functional layer and the first conductive pin 91. In embodiments where the wafer carrier chuck includes an intermediate connection layer described later, the chuck base 10 also provides a mounting base for the intermediate connection layer. In the embodiments of this application, the chuck base 10 is a conductive structural component; that is, the chuck base 10 is made of at least a conductive material. During specific process steps, the chuck base 10 needs to be conductive.

[0025] The functional layer is a structure with preset functions in the wafer carrier chuck, and the functional layer is stacked on the chuck base 10. Specifically, the functional layer can be stacked on the chuck base 10 by means of bonding, connection with connectors, etc. The embodiments of this application do not limit the specific arrangement of the functional layer on the chuck base 10. The structure of the functional layer can be various. For example, the functional layer can include an electrostatic adsorption layer, a heating layer, or other functional layers. The embodiments of this application do not limit the specific structure of the functional layer. In some embodiments, the functional layer can include an insulating layer 20, an electrostatic adsorption layer, and a dielectric layer. The insulating layer 20, the electrostatic adsorption layer (the electrostatic adsorption layer includes an electrostatic adsorption electrode 30), and the dielectric layer are stacked sequentially on the chuck base 10. The insulating layer 20 can be fixed to the chuck base 10 by an intermediate connecting layer. The intermediate connecting layer can be the adhesive layer 06 described later or made of other flexible materials.

[0026] The first end of the first conductive pin 91 is elastically electrically connected to the chuck base 10, and the second end of the first conductive pin 91 passes through the functional layer and protrudes from the wafer support surface of the functional layer facing away from the chuck base 10. The wafer support surface is used to support the wafer 05.

[0027] When the wafer carrier chuck carries wafer 05, the first conductive pin 91 is pressed down by wafer 05 to support wafer 05 on the wafer carrier surface. Specifically, when the wafer carrier chuck carries wafer 05, wafer 05 presses down on the first conductive pin 91 under its own weight. Since the first conductive pin 91 is elastically electrically connected to the chuck base 10, the first conductive pin 91 will move downward, thereby allowing wafer 05 to be supported by the wafer carrier surface. In this case, wafer 05 is simultaneously supported and cooperated with the second end of the first conductive pin 91 and the wafer carrier surface, and the weight of wafer 05 is shared by the first conductive pin 91 and the wafer carrier surface. Of course, when the wafer carrier chuck is an electrostatic chuck, the first conductive pin 91 and the wafer carrier surface will also share the electrostatic attraction force of the electrostatic adsorption electrode 30 of the electrostatic chuck on wafer 05.

[0028] The wafer carrier chuck disclosed in this application improves the structure of wafer carrier chucks in related technologies by making the first end of the first conductive pin 91 elastically electrically connected to the chuck base 10. This allows the first conductive pin 91 to sink under the weight of the wafer 05 while the wafer carrier chuck is carrying it, until the wafer 05 is positioned where it can be simultaneously supported by both the wafer carrier surface and the second end of the first conductive pin 91. In this case, the wafer 05 will not be unable to engage with the wafer carrier surface due to the second end of the first conductive pin 91 being too high, nor will it be unable to make conductive contact with the first conductive pin 91 due to the wafer carrier surface being higher than the second end of the first conductive pin 91. Ultimately, this ensures both support and conductive contact for the wafer 05 during the process, guaranteeing the normal operation of the process.

[0029] In some embodiments, wafer 05 can directly contact the wafer carrier surface, thereby being directly supported by it. This support method enables surface-to-surface contact support, thus improving the stability of wafer 05 support. However, it is prone to contamination of wafer 05. Therefore, in other embodiments, as shown in FIG3, the wafer carrier chuck further includes a plurality of wafer support bumps 32 disposed on the side of the functional layer facing away from the chuck base 10. The end faces of the plurality of wafer support bumps 32 facing away from the functional layer together constitute the wafer carrier surface. The plurality of wafer support bumps 32 are spaced apart and used to support wafer 05. In this case, wafer 05 can be supported by the plurality of wafer support bumps 32, thereby being supported on the wafer carrier surface. This support structure can avoid large-area contact with wafer 05, thus reducing the likelihood of contamination of wafer 05.

[0030] In the embodiments of this application, the plurality of wafer support bumps 32 may be distributed in a non-uniform manner. To provide more balanced support for wafer 05, in other embodiments, the plurality of wafer support bumps 32 may be distributed uniformly. The plurality of wafer support bumps 32 may be distributed in various ways. For example, the plurality of wafer support bumps 32 may be distributed in a concentric multi-ring pattern. The embodiments of this application do not limit the distribution method of the plurality of wafer support bumps 32.

[0031] In the specific process, temperature control of wafer 05 is required. In one embodiment, as shown in Figure 6, the wafer carrier chuck may have a vent hole 04. Specifically, the vent hole 04 can penetrate the wafer carrier chuck in the stacking direction (i.e., the carrier direction). The vent hole 04 is used to deliver a heat transfer gas (e.g., helium gas at a certain temperature). When the wafer carrier chuck carries wafer 05, the wafer carrier surface is used to form a gas heat transfer space between itself and wafer 05. The vent hole 04 is connected to the gas heat transfer space. During the specific heating or cooling process, the vent hole 04 delivers heat transfer gas into the gas heat transfer space. The heat transfer gas can contact the back side of wafer 05 more evenly within the gas heat transfer space, thereby achieving more uniform heating or cooling of wafer 05. This method can improve the uniformity of heating or cooling. Specifically, as shown in Figure 3, a sealing ring 07 can be provided on the edge of the wafer support surface. The sealing ring 07 can seal between the wafer 05 and the wafer support surface, thereby ensuring the airtightness of the gas heat transfer space.

[0032] Vent hole 04 can be opened in the central area of ​​the wafer carrier chuck or near the central area of ​​the wafer carrier chuck so that the heat transfer gas delivered by vent hole 04 can diffuse more evenly to the surrounding area, which is beneficial to improving the uniformity of heating or cooling of wafer 05.

[0033] In a further embodiment, the wafer carrier surface may also be provided with a venting groove 09. When the wafer carrier chuck carries the wafer 05, the venting groove 09 is used to communicate with the gas heat transfer space. Since the venting hole 04 is connected to the gas heat transfer space, and the venting groove 09 is also connected to the gas heat transfer space, the heat transfer gas delivered by the venting hole 04 can enter the gas heat transfer space, and the heat transfer gas entering the gas heat transfer space can enter the venting groove 09 and diffuse more quickly along the venting groove 09. The opening of the venting groove 09 facilitates the faster diffusion of the heat transfer gas in the gas heat transfer space, thereby further improving the heating or cooling efficiency and uniformity of the wafer 05.

[0034] In this embodiment, the structure of the venting groove 09 can be varied. To improve the ventilation performance of the venting groove 09, it can include annular grooves 34 and radial grooves 35. The radial grooves 35 communicate with the annular grooves 34, allowing the heat transfer gas delivered by the vent hole 04 to diffuse rapidly along the radial grooves 35 and the annular grooves 34, respectively. There can be one or more radial grooves 35, which are radially distributed. Similarly, there can be one or more annular grooves 34. When there are multiple annular grooves 34, they can be concentrically distributed. In the radial direction of the wafer carrier chuck, the multiple annular grooves 34 can be connected through the radial grooves 35, thereby improving their interconnection capability, which is more conducive to the efficient guidance of heat transfer gas. Of course, this embodiment does not limit the specific structure of the venting groove 09.

[0035] As described above, the first end of the first conductive pin 91 is elastically electrically connected to the chuck base 10. Various structures can be used to achieve this connection. For example, the first end of the first conductive pin 91 can be an elastic conductive end, allowing it to directly contact the chuck base 10 for support, thus achieving both elastic support and conductive contact. In other embodiments, as shown in Figures 2 and 6, the wafer carrier chuck disclosed in this application may further include a first elastic element 92. The first elastic element 92 is electrically connected to the chuck base 10, enabling installation using the chuck base 10 as both the mounting and electrical connection base. The first elastic element 92 is a conductive element, elastically supporting the first end of the first conductive pin 91, thereby indirectly achieving an elastic electrical connection between the first end of the first conductive pin 91 and the chuck base 10 through the elastic deformation of the first elastic element 92. The first conductive pin 91 can be a metal structural component with minimal deformation; in this case, the first end of the first conductive pin 91 can achieve an elastic electrical connection with the chuck base 10 through the first elastic element 92.

[0036] The first elastic element 92 can be of various types. For example, the first elastic element 92 can be a helical spring or other elastic structures. The embodiments of this application do not limit the specific structure of the first elastic element 92. As mentioned above, the first elastic element 92 can be a first conductive spring, for example, a first metal spring, which can be made of aluminum alloy, for example. The first end of the first conductive spring can be fixed to the chuck base 10, and the second end of the first conductive spring can elastically support and contact the first end of the first conductive pin 91. The first elastic element 92 uses a first conductive spring, which allows for easier fixing to the bottom of the wafer carrier device. The first conductive spring fixed to the bottom of the wafer carrier device can both support and contact the first end of the first conductive pin 91 without affecting the second end of the first conductive pin 91 protruding from the functional layer from bottom to top and extending out of the wafer carrier surface. Meanwhile, the second end of the first conductive spring is located below the first conductive pin 91. It only needs to make support contact with the first end of the first conductive pin 91 to achieve an elastic electrical connection between the first conductive pin 91 and the chuck base 10. There is no need to design a connection structure between the first end of the first conductive pin 91 and the second end of the first conductive spring, which simplifies the assembly operation of the first conductive pin 91.

[0037] To ensure proper support and engagement between wafer 05 and its bearing surface after the first conductive pin 91 is pressed down by wafer 05, the elasticity of the first elastic element 92 needs to be rationally designed. In one feasible embodiment, to ensure that wafer 05 presses down the first conductive pin 91 using its own weight, the elastic force exerted by the first elastic element 92 on the first conductive pin 91 should be less than the weight of wafer 05 / (n × the number of first conductive pins 91), where n is a safety factor, for example, n can be 2. In this embodiment, the number of first elastic elements 92 can be equal to the number of first conductive pins 91, and they provide elastic support to the first conductive pins 91 in a one-to-one correspondence. Of course, this embodiment does not limit the correspondence between the number of first elastic elements 92 and the number of first conductive pins 91.

[0038] The first end of the first conductive spring can be fixed to the chuck base 10 by means of conductive adhesive, or other methods can be used to achieve a fixed electrical connection on the chuck base 10. In some embodiments, as shown in FIG2, the first end of the first conductive spring can be fixed to the chuck base 10 by means of a threaded fastener 94. The threaded fastener 94 can be a conductive element. While fastening the first end of the first conductive spring, the threaded fastener 94 can also conduct electricity, so that the first conductive spring is fixedly connected to the chuck base 10, thereby realizing the installation of the first conductive spring. Of course, under the fastening action of the threaded fastener 94, the first conductive spring can directly contact the chuck base 10, thereby realizing a conductive connection between the two.

[0039] Furthermore, in some embodiments, the first end of the first conductive spring may include an elastic washer portion 921, and the threaded fastener 94 may include a nut portion 941 and a screw portion 942 connected together. Specifically, the nut portion 941 and the screw portion 942 may be an integral structure. The screw portion 942 passes through the elastic washer portion 921 and is fixed to the chuck base 10 by a threaded engagement. The elastic washer portion 921 is clamped and fixed between the nut portion 941 and the chuck base 10. In this case, the first end of the first conductive spring includes the elastic washer portion 921, which can exert a tensioning effect, thereby making the threaded fastener 94 less prone to loosening. It can be seen that the first conductive spring not only plays the role of elastically connecting the first conductive pin 91 and the chuck base 10, but also can cooperate with the threaded fastener 94 to achieve a more secure fixation on the chuck base 10, achieving the purpose of multiple uses.

[0040] In some embodiments, the chuck base 10 may have a first receiving groove 15, a first elastic member 92 may be disposed in the first receiving groove 15, a first end of a first conductive pin 91 is located in the first receiving groove 15, and a second end of the first conductive pin 91 passes through the bottom wall and functional layer of the first receiving groove 15 and protrudes from the wafer carrier surface. This structure enables the recessed design of the first elastic member 92, allowing the chuck base 10 to sacrifice a portion of itself to create space to accommodate the first elastic member 92, which helps to reduce the overall size of the wafer carrier chuck. At the same time, the first ends of both the first elastic member 92 and the first conductive pin 91 are located in the first receiving groove 15, making them less likely to be accidentally touched during assembly, thus helping to ensure the stability of their installation.

[0041] In this embodiment, both the chuck base 10 and the functional layer can have light holes (i.e., holes with smooth inner walls), and the first conductive pin 91 can be inserted through the light holes. When the wafer carrier chuck carries the wafer 05, the wafer 05 presses down on the first conductive pin 91 by its own gravity, thereby causing the first conductive pin 91 to descend. In the specific design process, the first conductive pin 91 needs to protrude beyond the wafer carrier surface by a preset height without being subjected to the gravity of the wafer 05, so that when the wafer carrier supports the wafer 05, it can ensure that after the wafer 05 presses down on the first conductive pin 91, it supports and cooperates with the wafer carrier surface. Of course, during the installation process, the elastic force of the first elastic element 92 can be precisely designed so that after the first conductive pin 91 is elastically connected to the chuck base 10, the second end of the first conductive pin 91 protrudes precisely beyond the preset height of the wafer carrier surface. However, this places extremely high demands on assembly and design, and also brings considerable difficulty.

[0042] Based on this, in some embodiments, as shown in FIG2, the wafer carrier chuck disclosed in this application may have a second threaded hole 14 at the chuck base 10. The wafer carrier chuck may also include a first external threaded sleeve 93, which is fixedly connected to the second threaded hole 14 by a threaded engagement. The first external threaded sleeve 93 has a first through hole 13, which is a first stepped hole. The first conductive pin 91 may be a stepped shaft structure, with the second end of the first conductive pin 91 passing through the first stepped hole, and the first conductive pin 91 making limiting contact with the first stepped hole in the direction toward the functional layer. In this structure, since the first through hole 13 is a first stepped hole and the first conductive pin 91 is a stepped shaft structure, the first conductive pin 91 can make limiting contact with the first through hole 13 in the direction toward the functional layer, thereby preventing the second end of the first conductive pin 91 from over-extending, and thus preventing the second end of the first conductive pin 91 from over-protruding from the wafer carrier surface. Meanwhile, during installation, the operator can adjust the screwing depth of the first external threaded sleeve 93 in the second threaded hole 14 to limit the protrusion length of the second end of the first conductive pin 91 under the elastic force of the first elastic element 92. Since the threaded fit between the first external threaded sleeve 93 and the second threaded hole 14 allows for stepless adjustment of the screwing depth, the first conductive pin 91 can be precisely limited, ultimately achieving the goal of precisely limiting the height of the second end of the first conductive pin 91 protruding from the wafer bearing surface.

[0043] Since the first external threaded sleeve 93 is threadedly engaged with the second threaded hole 14 of the chuck base 10, and the first conductive pin 91 is limitedly engaged with the first through hole 13, in this embodiment, to prevent the first conductive pin 91 from short-circuiting with the chuck base 10 without passing through the first elastic member 92, the first external threaded sleeve 93 can be made of insulating material. In other embodiments including the first external threaded sleeve 93, the first external threaded sleeve 93 can also be made of conductive material. In this case, the first conductive pin 91 can be electrically connected to the chuck base 10 through the first external threaded sleeve 93, while the first elastic member 92 only functions to elastically connect with the first conductive pin 91.

[0044] As mentioned above, the chuck base 10 is a conductive structural component, specifically used to connect to an RF power supply. During the specific process, the chuck base 10 applies RF power to the wafer 05 via the first conductive pin 91, thereby generating a bias voltage to provide energy for ions to move towards the wafer 05. For the ion implantation process, applying RF power to the wafer 05 via the first conductive pin 91 generates a bias voltage on the wafer 05, thus providing ion implantation energy. However, after the process is completed, residual charge remains on the wafer 05. This residual charge causes the wafer 05 to adhere to the wafer carrier chuck and become difficult to remove, which is clearly detrimental to subsequent wafer transfer.

[0045] Based on this, the chuck base 10 disclosed in this application embodiment can have a first electrical connection state and a second electrical connection state. When the chuck base 10 is in the first electrical connection state, it is used to connect to an RF power supply and can apply RF power to the wafer 05 via the first conductive pin 91. In this case, the wafer 05 is in the process, and the application of RF power to the wafer 05 generates the bias voltage required for the process. When the chuck base 10 is in the second electrical connection state, it is used to connect to a reference level, such as ground, and can discharge residual charge from the wafer 05 via the first conductive pin 91. In this case, because the residual charge is discharged, the wafer 05 is not difficult to remove from the wafer carrier chuck due to the adsorption effect of the residual charge. In a specific implementation, a control switch can be added so that the chuck base 10 is electrically connected to both the RF power supply and the reference level (e.g., ground) via the control switch, and the electrical connection state of the chuck base 10 can be changed by controlling the state of the control switch.

[0046] In the embodiments of this application, the functional layer can have various structures. For example, the functional layer may include an electrostatic adsorption layer, which generates electrostatic adsorption force when energized, thereby adsorbing the wafer 05 and fixing it to the wafer carrier surface by adsorption. In this case, the wafer carrier chuck is essentially an electrostatic chuck. Alternatively, the functional layer can be a heating layer, which generates heat when energized, thereby heating the wafer 05. The embodiments of this application do not limit the specific structure of the functional layer.

[0047] The functional layer is typically bonded to the chuck base 10 using adhesive layer 06. During the process, process gases continuously erode the connection between the functional layer and the chuck base 10, eventually damaging the chuck base 10 or the area where the functional layer connects, making subsequent repair difficult. Therefore, in some embodiments, as shown in FIG6, the wafer carrier chuck disclosed in this application may further include a sealing ring 80. The sealing ring 80 may be disposed around the connection between the functional layer and the chuck base 10, covering the connection. In this case, the sealing ring 80 covers the connection, thereby sealing and isolating the connection from the external process environment, ultimately protecting the connection between the functional layer and the chuck base 10 from continuous erosion. In this embodiment, the sealing ring 80 can be made of a corrosion-resistant polymer material, or other types of materials. This embodiment does not limit the specific material of the sealing ring 80, as long as it does not affect the semiconductor process performed on the wafer 05. In some other optional embodiments, the sealing ring 80 is detachably installed at the connection point of the chuck base 10, allowing for periodic replacement of the sealing ring 80 and thus extending the service life of the wafer carrier chuck. The sealing ring 80 can be a rubber sealing ring.

[0048] As mentioned above, in specific process steps, the functional layer needs to be energized. For example, the functional layer needs to be energized to achieve the electrostatic adsorption function of wafer 05, or the functional layer needs to be energized to achieve the heating function, etc. Based on this, as shown in Figure 4, the wafer carrier chuck disclosed in this application embodiment further includes a first electrical connection portion 40 and a second electrical connection portion 50. The chuck base 10 is provided with a receiving hole 11, and the functional layer covers the first opening of the receiving hole 11. The first end 42 of the first electrical connection portion 40 is electrically connected to the electrical components of the functional layer (e.g., heating electrode, electrostatic adsorption electrode), and the electrical components of the functional layer are insulated from the chuck base 10. Specifically, a pad 010 may be provided in the insulating layer 20, and the first end 42 of the first electrical connection portion 40 can be electrically connected to the electrical components of the functional layer through the pad 010 and connecting wires.

[0049] The second end 41 of the first electrical connection portion 40 is located in the receiving hole 11. The second electrical connection portion 50 extends into the receiving hole 11 through the second opening and is electrically connected to the second end 41 of the first electrical connection portion 40. Specifically, the first end of the second electrical connection portion 50 extends into the receiving hole 11 through the second opening and is electrically connected to the second end 41 of the first electrical connection portion 40, while the second end of the second electrical connection portion 50 extends out of the receiving hole 11 and is electrically connected to a power source (e.g., DC power source, AC power source). This structure enables an external power source to supply power to the electrical devices in the functional layer. It should be noted that the first opening and the second opening are two opposite ports of the receiving hole 11.

[0050] The electrical components in the functional layer are insulated from the chuck base 10. There are various structures to achieve this insulation isolation. Specifically, the functional layer may include an insulating layer 20 and electrical components embedded in or stacked on the insulating layer 20. The electrical components can achieve insulation isolation from the chuck base 10 through the insulating layer 20.

[0051] Specifically, the insulating layer 20 and the electrical device (such as the electrostatic adsorption electrode 30 mentioned above) are sequentially stacked on the chuck base 10. The insulating layer 20 is made of insulating material, and the specific material of the insulating layer 20 is not limited in this embodiment. For example, the insulating layer 20 can be a ceramic layer made of insulating ceramic material. Of course, it should be noted that the first conductive pin 91 does not contact the electrical device or is insulated from the electrical device by the insulating layer 20 during the process of passing through the functional layer. Therefore, the first conductive pin 91 will not transmit the radio frequency power transmitted by the chuck base 10 during the process to the electrical device. Specifically, as shown in FIG2, the insulating layer 20 has a second through hole 21 for the first conductive pin 91 to pass through. In order to facilitate the passage of the first conductive pin 91, the first conductive pin 91 does not need to contact the inner wall of the second through hole 21.

[0052] In some embodiments, the insulating layer 20 is a ceramic layer, which can provide good insulation while being less likely to generate particulate matter that could contaminate the wafer 05.

[0053] The electrical device may include an electrostatic adsorption electrode 30, which may be embedded in the insulating layer 20 or stacked on the side of the insulating layer 20 facing away from the chuck base 10. The electrostatic adsorption electrode 30 has a third through hole 31 through which a first conductive pin 91 passes. Specifically, the first conductive pin 91 may not contact the inner wall of the third through hole 31, thereby preventing electrical conduction between the first conductive pin 91 and the electrostatic adsorption electrode 30.

[0054] The first electrical connection portion 40 and the second electrical connection portion 50 can be electrically connected in various ways. In some embodiments, as shown in FIG4, the second end 41 of the first electrical connection portion 40 and the second electrical connection portion 50 may each have a first threaded hole 411, and the other may include a stud. The second end 41 of the first electrical connection portion 40 and the second electrical connection portion 50 can be electrically connected through the threaded engagement between the first threaded hole 411 and the threaded stud. In other embodiments, the second end 41 of the first electrical connection portion 40 and the second electrical connection portion 50 can be electrically connected by magnetic adsorption. In still other embodiments, the second end 41 of the first electrical connection portion 40 and the second electrical connection portion 50 may each have a insertion hole, and the other may include an insertion protrusion. The second end 41 of the first electrical connection portion 40 and the second electrical connection portion 50 can be connected through the insertion engagement of the insertion protrusion and the insertion hole. The embodiments of this application do not limit the specific electrical connection method between the first electrical connection portion 40 and the second electrical connection portion 50.

[0055] After the first electrical connection 40 and the second electrical connection 50 are electrically connected, the second electrical connection 50 requires an external power source, such as a DC power supply. This means that a portion of the second electrical connection 50 is located outside the receiving hole 11, making it susceptible to impact forces. These impact forces are easily transmitted to the functional layer through the first electrical connection 40, potentially damaging the electrical connection between the first electrical connection 40 and the functional layer. In particular, if the functional layer includes a ceramic layer, the high hardness of the ceramic layer makes it prone to brittle fracture upon impact. This not only damages the structure of the functional layer but also harms the electrical connection between the first electrical connection 40 and the functional layer, thus affecting the lifespan of the wafer carrier chuck. Especially during wafer carrier chuck transportation, the chuck is vulnerable to external impacts, causing the second electrical connection 50 to impact the functional layer through the first electrical connection 40. This can lead to damage to the wafer carrier chuck before it is even put into production, resulting in significant economic losses for the user.

[0056] Based on this, as shown in Figure 4, the wafer carrier chuck disclosed in this application embodiment further includes a buffer 60, which can be disposed in the receiving hole 11. The buffer 60 contacts the second electrical connection portion 50 and is used to buffer the impact load applied by the second electrical connection portion 50 to the first electrical connection portion 40. In this case, the buffer 60 can play a buffering role, and when the second electrical connection portion 50 is subjected to an impact force, the second electrical connection portion 50 can transfer the impact load to the buffer 60, so that the buffer 60 absorbs the impact load, thereby reducing or avoiding the functional layer from being impacted.

[0057] The structure of the buffer 60 can be varied. The buffer 60 can be an elastic structure or a structural component made of an elastic material. The embodiments of this application do not limit the specific material or structure of the buffer 60. In the embodiments of this application, the buffer 60 is an insulating structural component made of an insulating material, such as an insulating resin component, thereby preventing electrical connection between the first electrical connection portion 40 and the chuck base portion 10, and also preventing electrical connection between the second electrical connection portion 50 and the chuck base 10.

[0058] In this embodiment, the structure of the second electrical connection 50 can be varied. In some embodiments, the second electrical connection 50 may include an electrical connection body 51 and a first protrusion 52, with the first protrusion 52 connected to the electrical connection body 51. The electrical connection body 51 may be electrically connected to the second end 41 of the first electrical connection 40. The buffer 60 is positioned between the first protrusion 52 and the functional layer. In this case, the first protrusion 52 can be positioned and cooperate with the buffer 60, which not only better restricts the buffer 60 and thus achieves stable installation of the buffer 60, but also allows the second electrical connection 50 to transfer the impact load to the buffer 60 through the first protrusion 52 when the second electrical connection 50 is subjected to an impact load, thereby enabling the buffer 60 to perform a better buffering function.

[0059] The structure of the first protrusion 52 can vary. In a more specific embodiment, to enable the buffer 60 to better receive impact loads, the first protrusion 52 can be a first annular protrusion. The first annular protrusion has a first annular surface, which can be disposed around the electrical connection body 51 and positioned in contact with the end face 63 of the buffer 60 facing away from the functional layer. In this case, because the first protrusion 52 has a first annular surface, it can make omnidirectional positioning contact with the buffer 60 around the electrical connection body 51, which is beneficial for the impact load on the second electrical connection portion 50 to be more evenly buffered and absorbed by the buffer 60, ultimately improving the buffering effect.

[0060] As described above, the structure of the buffer 60 can be varied. In some embodiments, a first annular space 01 can be formed between the first electrical connection portion 40 and the first annular surface. The buffer 60 may include an annular portion 61, which is disposed in the first annular space 01, and the electrical connection body 51 passes through the annular portion 61. In this structure, the cooperation between the annular portion 61 and the first annular space 01 makes the installation of the buffer 60 more stable, and at the same time, it allows part of the structure of the buffer 60 to be fully adapted to the mating space between the first electrical connection portion 40 and the second electrical connection portion 50, thereby better exerting the buffering effect.

[0061] In some embodiments, a second protrusion 12 is provided at the first opening of the receiving hole 11, and the buffer 60 can be positioned between the first protrusion 52 and the second protrusion 12. This structure allows the buffer 60 to cooperate with the second protrusion 12, thereby enabling the buffer 60 to be installed more stably. At the same time, the second protrusion 12 can bear the impact load buffered by the buffer 60. Since the second protrusion 12 is fixed to the chuck base 10 or is part of the chuck base 10, the impact load buffered by the buffer 60 can ultimately be transferred to the chuck base 10 as a basic component, thereby indirectly reducing the impact load transferred to the functional layer.

[0062] Similarly, in order to receive the impact load transmitted by the buffer 60 more evenly, in a further embodiment, the second protrusion 12 can be a second annular protrusion. The second annular protrusion is disposed around the second end 41 of the first electrical connection portion 40, and the second annular protrusion is positioned and engaged with the buffer 60, thereby being able to bear the impact load buffered by the buffer 60 more comprehensively, which is beneficial to improving the buffering effect.

[0063] Furthermore, the second annular protrusion may have a first annular stepped surface 121, and the surface of the buffer member 60 facing the second annular protrusion may have a second annular stepped surface 62. The first annular stepped surface 121 and the second annular stepped surface 62 are adapted to each other and make positioning contact. In this case, the second annular protrusion can achieve better positioning and engagement by adapting the first annular stepped surface 121 to the second annular stepped surface 62.

[0064] In the embodiments of this application, the structure of the buffer 60 can be varied. For example, there can be multiple buffers 60, which are disposed on opposite sides of the electrical connection between the first electrical connection portion 40 and the second electrical connection portion 50, or they can be located on one side of the electrical connection between the first electrical connection portion 40 and the second electrical connection portion 50. The embodiments of this application do not impose any limitations.

[0065] In some embodiments, the buffer 60 may be disposed around the first electrical connection 40, thereby providing a buffering effect between the first electrical connection 40 and the second electrical connection 50 in multiple directions. To prevent the impact load on the buffer 60 from being further transmitted to the functional layer through the first electrical connection 40 or the second electrical connection 50, in a more specific embodiment, the buffer 60 is disposed around the first electrical connection 40 and spaced apart from it to form an annular gap 02. In this case, the buffer 60 and the first electrical connection 40 form an annular gap 02, preventing the buffer 60 from contacting the first electrical connection 40 and thus preventing the transmission of impact loads through contact friction with the first electrical connection 40 during the buffering process. This further reduces the impact on the functional layer. The width of the annular gap 02 can be 0.25mm-1mm, that is, the distance between the inner wall of the buffer 60 and the first electrical connection 40.

[0066] Similarly, to further reduce the impact load transmitted from the buffer 60 to the functional layer, in this embodiment, the buffer 60 is spaced apart from the functional layer, meaning that the buffer 60 does not contact the functional layer. Specifically, there are various ways to achieve this spaced-apart arrangement between the buffer 60 and the functional layer. For example, in an embodiment where the wafer carrier chuck includes a second protrusion 12, the second protrusion 12 can be positioned and engaged with the buffer 60, thereby avoiding restricting contact between the buffer 60 and the functional layer.

[0067] Of course, in other embodiments, the buffer 60 is interference-fitted with the receiving hole 11, that is, the buffer 60 is tightly fitted with the inner wall of the receiving hole 11, thereby generating strong friction between the two, so that the impact load received by the buffer 60 is better transferred to the chuck base 10, thereby reducing or avoiding the buffer 60 from transferring the impact load to the functional layer.

[0068] To ensure a more secure installation of the buffer 60 within the receiving hole 11, in some embodiments, the wafer carrier chuck disclosed in this application may further include an adhesive portion 70. The adhesive portion 70 is located on the side of the buffer 60 facing away from the functional layer and is situated within the second annular space 03 formed by the hole wall of the receiving hole 11 and the second electrical connection portion 50. The adhesive portion 70 is bonded to the second electrical connection portion 50, the hole wall of the receiving hole 11, and the buffer 60, respectively. This allows the adhesive portion 70 to further secure the second electrical connection portion 50 and the buffer 60 based on the hole wall of the receiving hole 11, thereby improving installation stability.

[0069] In one embodiment, the end face 63 of the buffer 60 facing away from the functional layer can be a planar end face. Of course, in other embodiments, the end face 63 of the buffer 60 facing away from the functional layer includes a central annular plane 631 and an annular concave surface 632 surrounding the central annular plane 631 and recessed inward relative to the central annular plane 631 towards the functional layer. The annular concave surface 632 forms an annular groove with the wall of the receiving hole 11, and the adhesive portion 70 covers the end face 63 and fills the annular groove. This structure increases the bonding area between the adhesive portion 70 and the buffer 60 and the wall of the receiving hole 11, thereby improving the bonding strength.

[0070] In this embodiment, the end face of the second end of the first conductive pin 91 can be a plane, or the end face of the second end of the first conductive pin 91 can be a spherical surface to reduce the contact area.

[0071] In some embodiments, as shown in FIG1, the wafer carrier chuck disclosed in this application may further include a second conductive pin 95, which is mounted on the chuck base 10 and insulated from the chuck base 10. The first end of the second conductive pin 95 passes through the functional layer and protrudes from the wafer carrier surface. When the wafer carrier chuck carries a wafer 05, the first end of the second conductive pin 95 is used to make conductive contact with the back side of the wafer 05, for example, to detect the voltage on the back side of the wafer 05. The second end of the second conductive pin 95 is a connection end for a detection device. In a specific detection process, the connection end of the second conductive pin 95 is electrically connected to the detection device, thereby enabling the detection device to perform detection on the wafer 05 through the second conductive pin 95. Of course, the principle of detecting the wafer 05 is well-known technology and will not be described in detail here. When the functional layer includes the insulating layer 20 and the electrostatic adsorption electrode 30 described above, as shown in FIG5, the insulating layer 20 may have a fourth through-hole 22 for the second conductive pin 95 to pass through, and the electrostatic adsorption electrode 30 may have a fifth through-hole 33 for the second conductive pin 95 to pass through. Specifically, the second conductive pin 95 does not contact the inner wall of the fifth through hole 33, thereby preventing conductivity. To facilitate the passage of the second conductive pin 95, it may also not contact the inner wall of the fourth through hole 22.

[0072] The end face of the first end of the second conductive pin 95 can be a plane, or it can be a spherical surface to reduce the contact area.

[0073] In the specific design process, the second conductive pin 95 can be fixed to the chuck base 10 in an insulating manner, and the height of the first end of the second conductive pin 95 protruding from the wafer carrier surface can be controlled so that when the wafer carrier chuck carries the wafer 05, the first end of the second conductive pin 95 can just contact the back side of the wafer 05. That is to say, when the wafer carrier chuck carries the wafer 05, the wafer 05 presses down on the first conductive pin 91, so that the back side of the wafer 05 contacts the first conductive pin 91, and at the same time, the wafer 05 can be supported on the wafer carrier surface and the back side of the wafer 05 can contact the first end of the second conductive pin 95.

[0074] Of course, since the second end of the second conductive pin 95 is connected to the detection equipment, in order to better control the height of the second conductive pin 95 protruding from the wafer carrier surface, in some embodiments, the wafer carrier chuck disclosed in this application may also include a second threaded sleeve 96. The second threaded sleeve 96 is an insulating structural component. The chuck base 10 may be provided with a third threaded hole 16, and the second threaded sleeve 96 and the third threaded hole 16 can be threadedly engaged. The second conductive pin 95 is connected to the second threaded sleeve 96 and is insulated from the chuck base 10 through the second threaded sleeve 96. The first end of the second conductive pin 95 passes through the second threaded sleeve 96 and the functional layer in sequence, and protrudes from the wafer carrier surface. In the embodiments of this application, the second conductive pin 95 can be directly connected to the second threaded sleeve 96 (e.g., the two are bonded, interference fit, etc.) or indirectly connected, and this application embodiment does not impose any limitations. In this scheme, the second conductive pin 95 is connected to the chuck base 10 through the threaded engagement of the second threaded sleeve 96 and the third threaded hole 16. During the assembly process, the operator can adjust the depth of the second threaded sleeve 96 into the third threaded hole 16 to adjust the height of the first end of the second conductive pin 95 protruding from the wafer carrier surface, so that the first end of the second conductive pin 95 can make conductive contact with the back side of the wafer 05 when the wafer carrier chuck is carrying the wafer 05.

[0075] The threaded fit between the second threaded sleeve 96 and the third threaded hole 16 is infinitely adjustable, which allows for a more precise determination of the height at which the first end of the second conductive pin 95 protrudes from the wafer bearing surface, thus achieving a better installation effect.

[0076] Furthermore, the second threaded sleeve 96 may have a second stepped hole, and the second conductive pin 95 may be a stepped shaft structure. The first end of the second conductive pin 95 passes through the second stepped hole and the functional layer in sequence, and protrudes from the wafer support surface. The second conductive pin 95 and the second stepped hole make limiting contact in the direction towards the functional layer. This limiting contact ensures that while the first end of the second conductive pin 95 passes through and protrudes from the wafer support surface, it does not overextend, thereby preventing the second conductive pin 95 from overextending and damaging the wafer 05.

[0077] In this embodiment, the number of second conductive pins 95 can be one or more. Considering that detection is required, it is not necessary to design too many second conductive pins 95. In one embodiment, the number of second conductive pins 95 can be one. This structure can avoid designing too many second conductive pins 95, which would occupy too much space and thus affect the layout of the first conductive pins 91. Considering that the first conductive pins 91 make conductive contact with the wafer 05 to form a better bias voltage on the wafer 05 to ensure the process effect, the number of first conductive pins 91 is preferably multiple.

[0078] As described above, the second conductive pin 95 can also be indirectly connected to the second threaded sleeve 96. Based on this, in some embodiments, the wafer carrier chuck disclosed in this application may further include a support member connected to the second threaded sleeve 96. As shown in Figure 5, the second conductive pin 95 may have an overlapping surface 951, which overlaps with the support member. The support member is an insulating structural component, or the support member is insulated from the chuck base 10 via the second threaded sleeve 96, thereby avoiding insulation isolation between the second conductive pin 95 and the chuck base 10. This overlapping method also enables the installation of the second conductive pin 95 on the chuck base 10.

[0079] The support member can have various structures. In some embodiments, the support member can be a threaded cap 97, which can be threadedly engaged with a second threaded sleeve 96. In one case, a portion of the threaded area of ​​the second threaded sleeve 96 is threadedly engaged with a third threaded hole 16, and another portion of the threaded area of ​​the second threaded sleeve 96 can be threadedly engaged with the threaded cap 97. For example, the second threaded sleeve 96 has external threads; the external threads at one end of the second threaded sleeve 96 can be threadedly engaged with the third threaded hole 16, and the external threads at the other end of the second threaded sleeve 96 can be threadedly engaged with the threaded cap 97. A second conductive pin 95 passes through the bottom wall of the inner cavity of the threaded cap 97. The second conductive pin 95 has an overlapping surface 951, which can overlap the bottom wall of the inner cavity of the threaded cap 97. In this embodiment, the support member is a threaded cap 97, which can fully utilize the inherent structure of the second threaded sleeve 96 for installation, thereby achieving multiple uses of the components and simplifying the structure. The threaded cap 97 can be a resin cap.

[0080] Furthermore, to control the overall size of the wafer carrier chuck, in some embodiments, as shown in FIG5, a second receiving groove 17 may be provided on the side of the chuck base 10 facing away from the functional layer, and a third threaded hole 16 may penetrate from the bottom wall of the second receiving groove 17 toward the functional layer. A portion of the second threaded sleeve 96 and the threaded cap 97 may be accommodated in the second receiving groove 17. This structure can sacrifice a portion of the structure of the chuck base 10 to create accommodating space for the second threaded sleeve 96 and the threaded cap 97, thereby avoiding the problem of these components protruding from the side of the chuck base 10 facing away from the functional layer and occupying additional space.

[0081] In the case where the wafer carrier chuck disclosed in this application includes a threaded cap 97, the threaded cap 97 may have a first surface facing the functional layer, and the chuck base 10 may have a second surface opposite to the first surface, with the first surface and the second surface in contact. In this case, the threaded cap 97 is equivalent to being screwed in to a position in contact with the chuck base 10. The contact between the threaded cap 97 and the chuck base 10 is similar to tightening the second threaded sleeve 96, thereby making the fit between the second threaded sleeve 96 and the third threaded hole 16 more stable, and ultimately preventing the second threaded sleeve 96 from coming loose from the third threaded hole 16. Of course, in other embodiments, the first surface and the second surface may not be in contact.

[0082] Based on the wafer carrier chuck 200 disclosed in the embodiments of this application, the embodiments of this application further disclose a semiconductor process chamber, as shown in FIG7. The disclosed semiconductor process chamber includes a chamber body 100 and the wafer carrier chuck described in the above embodiments. The chamber body 100 is provided with a process space 110, and the wafer carrier chuck 200 is disposed in the process space 110.

[0083] As shown in Figure 1, the semiconductor process chamber disclosed in this embodiment further includes a rising ejector pin 98. Correspondingly, as shown in Figure 3, the wafer carrier chuck 200 may have ejector pin holes 08 for the rising ejector pin 98 to move up and down. The rising ejector pin 98 drives the wafer 05 to move up and down, thereby realizing the loading or unloading of the wafer 05. During the unloading of the wafer 05, the rising ejector pin 98 may also be connected to a reference level, such as grounded, to further avoid interference from residual charge on the unloading of the wafer 05.

[0084] The above embodiments of this application focus on describing the differences between the various embodiments. As long as the different optimization features of the various embodiments are not contradictory, they can be combined to form a better embodiment. For the sake of brevity, they will not be described in detail here.

[0085] The embodiments of this application have been described above with reference to the accompanying drawings. However, this application is not limited to the specific embodiments described above. The specific embodiments described above are merely illustrative and not restrictive. Those skilled in the art can make many other forms under the guidance of this application without departing from the spirit and scope of the claims, and all of these forms are within the protection scope of this application.

Claims

1. A wafer carrier chuck, characterized in that, It includes a chuck base, a functional layer, and a first conductive pin, wherein the functional layer is stacked on the chuck base; The chuck base is a conductive structural component. The first end of the first conductive pin is elastically electrically connected to the chuck base. The second end of the first conductive pin passes through the functional layer and protrudes from the wafer bearing surface of the functional layer opposite to the chuck base. When the wafer carrier chuck carries the wafer, the first conductive pin is used to be pressed down by the wafer so that the wafer is supported on the wafer carrier surface.

2. The wafer carrier chuck according to claim 1, characterized in that, The wafer carrier chuck also includes a plurality of wafer support bumps disposed on the side of the functional layer opposite to the base of the chuck, and the end faces of the plurality of wafer support bumps opposite to the functional layer together constitute the wafer carrier surface. When the wafer carrier chuck carries the wafer, the first conductive pin is pressed down by the wafer to make the wafer contact the end face of the plurality of wafer support bumps on the side opposite to the functional layer.

3. The wafer carrier chuck according to claim 2, characterized in that, The wafer carrier surface has a venting groove, and the wafer carrier chuck has a venting hole. When the wafer carrier chuck carries the wafer, the wafer carrier surface is used to form a gas heat transfer space between itself and the wafer. Both the venting groove and the venting hole are connected to the gas heat transfer space.

4. The wafer carrier chuck according to claim 1, characterized in that, The wafer carrier chuck further includes a first elastic element, which is electrically connected to the base of the chuck and elastically supports the first end of the first conductive pin.

5. The wafer carrier chuck according to claim 4, characterized in that, The first elastic element is a first conductive spring sheet, the first end of the first conductive spring sheet is fixed to the base of the chuck, and the second end of the first conductive spring sheet is in elastic support contact with the first end of the first conductive pin.

6. The wafer carrier chuck according to claim 4, characterized in that, The chuck base has a first receiving groove, the first elastic element is disposed in the first receiving groove, the first end of the first conductive pin is located in the first receiving groove, and the second end of the first conductive pin passes through the bottom wall of the first receiving groove and the functional layer, and protrudes from the wafer bearing surface.

7. The wafer carrier chuck according to claim 1, characterized in that, The chuck base is provided with a second threaded hole, and the wafer carrier chuck also includes a first external threaded sleeve, which is fixedly connected to the second threaded hole by thread engagement; The first external thread is provided with a first through hole, the first through hole is a first stepped hole, the first conductive pin is a stepped shaft structure, the second end of the first conductive pin passes through the first stepped hole, and the first conductive pin and the first stepped hole are in a limiting contact in the direction toward the functional layer.

8. The wafer carrier chuck according to claim 1, characterized in that, The chuck base has a first electrical connection state and a second electrical connection state, wherein: When the chuck base is in the first electrical connection state, the chuck base is used to connect to an RF power supply and can apply RF power to the wafer through the first conductive pin; When the chuck base is in the second electrical connection state, the chuck base is used to connect to a reference level and can discharge the residual charge of the wafer through the first conductive pin.

9. The wafer carrier chuck according to claim 1, characterized in that, The wafer carrier chuck includes a sealing ring, which is disposed around the connection between the functional layer and the base of the chuck and is detachably mounted at the connection, and the sealing ring covers the connection.

10. The wafer carrier chuck according to any one of claims 1-9, characterized in that, The wafer carrier chuck further includes a first electrical connection portion and a second electrical connection portion; The chuck base is provided with a receiving hole, the functional layer covers the first opening of the receiving hole, the first end of the first electrical connection part is electrically connected to the electrical device of the functional layer, the second end of the first electrical connection part is located in the receiving hole, the second electrical connection part extends into the receiving hole through the second opening of the receiving hole and is electrically connected to the second end of the first electrical connection part, and the electrical device is insulated from the chuck base.

11. The wafer carrier chuck according to claim 10, characterized in that, The functional layer includes an insulating layer and an electrostatic adsorption electrode, wherein: The electrostatic adsorption electrode is embedded in the insulating layer, which is stacked on the base of the chuck; or... The insulating layer and the electrostatic adsorption electrode are stacked sequentially on the base of the chuck.

12. The wafer carrier chuck according to claim 11, characterized in that, The wafer carrier chuck further includes a buffer element disposed in the receiving hole. The buffer element is in contact with the second electrical connection portion and is used to buffer the impact load applied by the second electrical connection portion to the first electrical connection portion.

13. The wafer carrier chuck according to claim 12, characterized in that, The second electrical connection portion includes an electrical connection body and a first protrusion connected to the electrical connection body. The electrical connection body is electrically connected to the second end of the first electrical connection portion. The buffer is positioned between the first protrusion and the functional layer.

14. The wafer carrier chuck according to claim 13, characterized in that, The first protrusion is a first annular protrusion, the first annular protrusion has a first annular surface, the first annular surface is disposed around the electrical connection body, and is positioned in contact with the end face of the buffer member facing away from the functional layer.

15. The wafer carrier chuck according to claim 14, characterized in that, A first annular space is formed between the first electrical connection portion and the first annular surface. The buffer includes an annular portion disposed in the first annular space, and the electrical connection body passes through the annular portion.

16. The wafer carrier chuck according to claim 13, characterized in that, A second protrusion is provided at the first opening of the receiving hole, and the buffer is positioned between the first protrusion and the second protrusion.

17. The wafer carrier chuck according to claim 16, characterized in that, The second protrusion is a second annular protrusion, the second annular protrusion has a first annular stepped surface, the surface of the buffer member facing the second annular protrusion has a second annular stepped surface, the first annular stepped surface and the second annular stepped surface are adapted to and positioned in contact.

18. The wafer carrier chuck according to claim 12, characterized in that, The buffer is disposed around the first electrical connection portion and spaced apart from the first electrical connection portion to form an annular gap.

19. The wafer carrier chuck according to claim 12, characterized in that, The wafer carrier chuck further includes an adhesive portion, which is disposed on the side of the buffer member facing away from the functional layer and in the second annular space formed by the hole wall of the receiving hole and the second electrical connection portion. The adhesive portion is bonded to the second electrical connection portion, the hole wall of the receiving hole and the buffer member respectively.

20. The wafer carrier chuck according to claim 19, characterized in that, The end face of the buffer member facing away from the functional layer may include a central annular plane and an annular concave surface surrounding the central annular plane and recessed inward relative to the central annular plane toward the functional layer. The annular concave surface forms an annular groove with the wall of the receiving hole. The adhesive portion covers the end face and fills the annular groove.

21. The wafer carrier chuck according to claim 10, characterized in that, In the first electrical connection part and the second electrical connection part, one is provided with a first threaded hole and the other includes a threaded post. The second end of the first electrical connection part and the second electrical connection part are electrically connected through the threaded engagement of the first threaded hole and the threaded post; or, the second end of the first electrical connection part and the second electrical connection part are electrically connected by magnetic adsorption. Alternatively, one of the second end of the first electrical connection portion and the second electrical connection portion may have a plug-in hole, and the other may have a plug-in protrusion. The second end of the first electrical connection portion and the second electrical connection portion are connected by the plug-in protrusion and the plug-in hole.

22. The wafer carrier chuck according to claim 1, characterized in that, The wafer carrier chuck also includes a second conductive pin, which is mounted on the base of the chuck and insulated from the base of the chuck. The first end of the second conductive pin passes through the functional layer and protrudes from the wafer carrier surface. When the wafer carrier chuck carries the wafer, the first end of the second conductive pin is used to make conductive contact with the back side of the wafer. The second end of the second conductive pin is a connection end for a detection device.

23. The wafer carrier chuck according to claim 22, characterized in that, The wafer carrier chuck also includes a second threaded sleeve, which is an insulating structural component. The base of the chuck is provided with a third threaded hole. The second threaded sleeve is threadedly engaged with the third threaded hole. The second conductive pin is connected to the second threaded sleeve and is insulated from the base of the chuck through the second threaded sleeve. The first end of the second conductive pin passes through the second threaded sleeve and the functional layer in sequence.

24. The wafer carrier chuck according to claim 23, characterized in that, The second threaded sleeve is provided with a second stepped hole, the second conductive pin is a stepped shaft structure, the first end of the second conductive pin passes through the second stepped hole and the functional layer in sequence, and the second conductive pin and the second stepped hole are in a limiting contact in the direction toward the functional layer.

25. The wafer carrier chuck according to claim 23, characterized in that, The wafer carrier chuck may further include a support member connected to a second threaded sleeve. The support member is an insulating structural component or is insulated from the base of the chuck by the second threaded sleeve. The second conductive pin has an overlapping surface that overlaps the support member.

26. The wafer carrier chuck according to claim 25, characterized in that, The support is a threaded cap, which is threadedly engaged with the second threaded sleeve. The second conductive pin passes through the bottom wall of the inner cavity of the threaded cap, and the overlapping surface overlaps the bottom wall of the inner cavity of the threaded cap.

27. The wafer carrier chuck according to claim 26, characterized in that, The chuck base has a second receiving groove on the side opposite to the functional layer, and the third threaded hole extends from the bottom wall of the second receiving groove toward the functional layer. A portion of the second threaded sleeve and the threaded cap are received in the second receiving groove.

28. A semiconductor process chamber, characterized in that, The device includes a chamber body and a wafer carrier chuck according to any one of claims 1 to 27, wherein the chamber body has a process space and the wafer carrier chuck is disposed in the process space.

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