Surface-emitting laser element, electronic device, and method of manufacturing surface-emitting laser element

Abstract

The present technology provides a surface emitting laser element that can reduce variations in emitted light intensity between a light emission part adjacent to a second region and a light emission part other than said light emission part.　A surface emitting laser element according to the present technology comprises a substrate, an electrode provided to one surface of the substrate, a first region provided to the side of the one surface that is opposite of the electrode and in which light emission parts having mesas are arranged in a plurality, and a second region arranged in the periphery of the first region on the side of the one surface that is opposite of the electrode, wherein the depth dimension of a second recess defined by the second region and a mesa adjacent to the second region, among the mesas of the plurality of light emission parts, is greater than the depth dimension of a first recess defined by two mesas that are adjacent to each other, among the mesas of the plurality of light emission parts.

Description

[Technical Field]

[0001] The technology according to the present disclosure (hereinafter also referred to as "the technology") relates to a surface-emitting laser element, an electronic device, and a method for manufacturing the surface-emitting laser element. [Background technology]

[0002] BACKGROUND ART Conventionally, a surface-emitting laser element is known that includes a first region in which a plurality of light-emitting portions each having a mesa are arranged, and a second region surrounding the first region (see, for example, Patent Document 1). [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2014-132692 Summary of the Invention [Problem to be solved by the invention]

[0004] However, in conventional surface-emitting laser elements, there is room for improvement in reducing variations in light emission intensity between the light-emitting portion adjacent to the second region and light-emitting portions other than the light-emitting portion adjacent to the second region.

[0005] Therefore, the present technology provides a surface-emitting laser element that can reduce variations in emission intensity between a light-emitting portion adjacent to a second region and light-emitting portions other than the light-emitting portion. [Means for solving the problem]

[0006] The present technology includes a substrate and an electrode provided on one surface of the substrate; a first region provided on the opposite side of the one surface from the electrode side, in which a plurality of light emitting units each having a mesa are arranged; a second region disposed around the first region on the opposite side of the one surface from the electrode side; Equipped with The surface-emitting laser element has a depth dimension of a second recess defined by a mesa of the plurality of light-emitting portion mesas adjacent to the second region and the second region that is greater than a depth dimension of a first recess defined by two adjacent mesas of the plurality of light-emitting portion mesas. The electrode may be a common electrode provided in common to the plurality of light-emitting sections. The second region may include a dummy mesa adjacent to a mesa adjacent to the second region, and the second recess may be defined by the mesa adjacent to the second region and the dummy mesa. The bottom surface of the second recess may be located closer to the one surface than the bottom surface of the first recess in a direction perpendicular to the substrate. The opening ends of the first and second recesses may be substantially flush with each other. The bottom surfaces of the first and second recesses may both be located on the other surface of the substrate opposite to the one surface side. The bottom surface of the first recess may be located on the other surface of the substrate opposite to the one surface side, and the bottom surface of the second recess may be located within the substrate. The bottom surfaces of the first and second recesses may both be located within the substrate. The first and second regions may be provided at different positions in an in-plane direction of a laminated structure including the substrate, and in the laminated structure, a first multilayer reflector, an active layer, and a second multilayer reflector may be laminated in this order on the side opposite to the electrode side of the one surface. The bottom surfaces of the first and second recesses may both be located within the first multilayer reflector. The bottom surface of the first recess may be located within the second multilayer reflector, and the bottom surface of the second recess may be located within the first multilayer reflector. The bottom surface of the first recess may be located within the first multilayer reflector, and the bottom surface of the second recess may be located within the substrate. The bottom surface of the first recess may be located within the second multilayer reflector, and the bottom surface of the second recess may be located within the substrate. The bottom surfaces of the first and second recesses may both be located within the second multilayer film reflector. In a cross section taken through the two adjacent mesas and the second region, the width of the second recess may be greater than the width of the first recess. Another electrode may be provided common to the top of at least one of the mesas adjacent to the second region and the tops of at least two of the mesas not adjacent to the second region. The distance between the centers of the two adjacent mesas may be 10 μm or more and 50 μm or less. The present technology also provides an electronic device including the surface-emitting laser element. The present technology includes a step of forming a stack by stacking a first multilayer reflector, an active layer, and a second multilayer reflector on a substrate in this order; a step of etching the laminate to form a first region in which a plurality of mesas are arranged and a second region around the first region; forming an electrode on a surface of the substrate opposite to a surface on the first multilayer film reflector side; Including, The present invention also provides a method for manufacturing a surface-emitting laser element, in which, in the step of forming the first and second regions, the laminate is etched so that the depth dimension of a second recess defined by a mesa of the plurality of light-emitting portion mesas adjacent to the second region and the second region is larger than the depth dimension of a first recess defined by two adjacent mesas of the plurality of light-emitting portion mesas. In the step of forming the electrode, the electrode may be formed in at least an area corresponding to the first and second areas on the surface of the substrate opposite to the surface on the first multilayer film reflector side. [Brief explanation of the drawings]

[0007] [Figure 1] 1 is a cross-sectional view (part 1) of a surface-emitting laser element according to an embodiment of the present technology; [Figure 2] 1 is a cross-sectional view (part 2) of a surface-emitting laser element according to an embodiment of the present technology. [Figure 3] 1 is a plan view of a surface-emitting laser element according to an embodiment of the present technology; [Figure 4]1 is a flowchart for explaining a first example of a method for manufacturing a surface-emitting laser element according to an embodiment of the present technology. [Figure 5] FIG. 5 is a cross-sectional view showing the first step of FIG. 4. [Figure 6] FIG. 5 is a cross-sectional view showing a first sub-step of the second step in FIG. 4. [Figure 7] FIG. 5 is a cross-sectional view showing a second sub-step of the second step in FIG. 4. [Figure 8] FIG. 5 is a cross-sectional view showing a third sub-step of the second step in FIG. 4. [Figure 9] FIG. 5 is a cross-sectional view showing a first sub-step of the third step in FIG. 4. [Figure 10] FIG. 5 is a cross-sectional view showing a second sub-step of the third step in FIG. 4. [Figure 11] FIG. 5 is a cross-sectional view showing a third sub-step of the third step in FIG. 4. [Figure 12] FIG. 5 is a cross-sectional view showing a fourth step in FIG. 4. [Figure 13] FIG. 5 is a cross-sectional view showing a fifth step in FIG. 4. [Figure 14] FIG. 5 is a cross-sectional view showing a sixth step in FIG. 4. [Figure 15] FIG. 5 is a cross-sectional view showing a seventh step in FIG. 4. [Figure 16] FIG. 5 is a cross-sectional view showing an eighth step in FIG. 4. [Figure 17] 10 is a flowchart for explaining a second example of a method for manufacturing a surface-emitting laser element according to an embodiment of the present technology. [Figure 18] FIG. 18 is a cross-sectional view showing a first sub-step of the third step in FIG. [Figure 19] FIG. 18 is a cross-sectional view showing a second sub-step of the third step in FIG. [Figure 20] FIG. 18 is a cross-sectional view showing a third sub-step of the third step in FIG. [Figure 21] FIG. 18 is a cross-sectional view showing a first sub-step of the fourth step in FIG. [Figure 22] FIG. 18 is a cross-sectional view showing a second sub-step of the fourth step in FIG. [Figure 23]10 is a flowchart for explaining a third example of a method for manufacturing a surface-emitting laser element according to an embodiment of the present technology. [Figure 24] FIG. 24 is a cross-sectional view showing a first sub-step of the third step in FIG. 23. [Figure 25] FIG. 24 is a cross-sectional view showing a second sub-step of the third step in FIG. 23. [Figure 26] FIG. 24 is a cross-sectional view showing a third sub-step of the third step in FIG. 23. [Figure 27] FIG. 24 is a cross-sectional view showing a first sub-step of the fourth step in FIG. 23. [Figure 28] FIG. 24 is a cross-sectional view showing a second sub-step of the fourth step in FIG. 23. [Figure 29] 1A to 1C are diagrams for explaining an operation of a surface-emitting laser element according to an embodiment of the present technology; [Figure 30] 10A and 10B are diagrams for explaining the operation of a surface-emitting laser element of a comparative example. [Figure 31] 1 is a cross-sectional view of a surface-emitting laser element according to a first modified example of an embodiment of the present technology. [Figure 32] 10 is a cross-sectional view of a surface-emitting laser element according to a second modification of an embodiment of the present technology. [Figure 33] FIG. 10 is a cross-sectional view of a surface-emitting laser element according to a third modified example of an embodiment of the present technology. [Figure 34] FIG. 10 is a cross-sectional view of a surface-emitting laser element according to a fourth modified example of an embodiment of the present technology. [Figure 35] FIG. 10 is a cross-sectional view of a surface-emitting laser element according to a fifth modified example of an embodiment of the present technology. [Figure 36] FIG. 13 is a cross-sectional view of a surface-emitting laser element according to a sixth modified example of an embodiment of the present technology. [Figure 37] 13 is a cross-sectional view (part 1) of a surface-emitting laser element according to a seventh modified example of an embodiment of the present technology. [Figure 38] 13 is a cross-sectional view (part 2) of a surface-emitting laser element according to a seventh modified example of an embodiment of the present technology. [Figure 39] 13 is a plan view of a surface-emitting laser element according to a seventh modified example of an embodiment of the present technology. FIG. [Figure 40]13 is a plan view of a surface-emitting laser element according to Modification 8 of an embodiment of the present technology. FIG. [Figure 41] 13 is a plan view of a surface-emitting laser element according to a ninth modified example of an embodiment of the present technology. FIG. [Figure 42] 1A and 1B are diagrams illustrating an example of application of a surface-emitting laser element according to an embodiment of the present technology to a distance measurement device. [Figure 43] 1 is a block diagram showing an example of a schematic configuration of a vehicle control system; [Figure 44] FIG. 2 is an explanatory diagram showing an example of an installation position of a distance measurement device. DETAILED DESCRIPTION OF THE INVENTION

[0008] Preferred embodiments of the present technology will be described in detail below with reference to the accompanying drawings. Note that in this specification and the drawings, components having substantially the same functional configurations are denoted by the same reference numerals, and redundant description will be omitted. The embodiments described below illustrate typical embodiments of the present technology, and the scope of the present technology should not be interpreted as being narrow. Even when it is described in this specification that the surface-emitting laser element, electronic device, and method for manufacturing a surface-emitting laser element according to the present technology each achieve multiple effects, it is sufficient that the surface-emitting laser element, electronic device, and method for manufacturing a surface-emitting laser element according to the present technology each achieve at least one effect. The effects described in this specification are merely examples and are not limiting, and other effects may also be achieved.

[0009] The explanation will be given in the following order: 1. Configuration of a surface-emitting laser element according to an embodiment of the present technology 2. Operation of the surface-emitting laser element according to an embodiment of the present technology 3. First Example of Method for Manufacturing Surface-Emitting Laser Element According to an Embodiment of the Present Technology 4. Second Example of Manufacturing Method of Surface-Emitting Laser Element According to an Embodiment of the Present Technology 5. Third Example of Manufacturing Method of Surface-Emitting Laser Element According to an Embodiment of the Present Technology 6. Effects of the surface-emitting laser element according to an embodiment of the present technology and effects of the manufacturing method thereof 7. Surface-emitting laser elements according to first to ninth modifications of an embodiment of the present technology 8. Another modification of an embodiment of the present technology 9. Application examples to electronic devices 10. Example of application of surface-emitting laser element to distance measurement device 11. Example of distance measurement device mounted on a moving object

[0010] 1. <Configuration of surface-emitting laser element according to one embodiment of the present technology> (Overall composition) Fig. 1 is a cross-sectional view (part 1) of a surface-emitting laser element according to an embodiment of the present technology. Fig. 2 is a cross-sectional view (part 2) of a surface-emitting laser element according to an embodiment of the present technology. Fig. 3 is a plan view of a surface-emitting laser element according to an embodiment of the present technology. The following description will be made using the XYZ three-dimensional Cartesian coordinate system shown in FIGS. 1 to 3 as appropriate. Fig. 1 is a cross-sectional view taken along line VV (YZ cross-sectional view) in Fig. 3. Fig. 2 is a cross-sectional view taken along line WW (XZ cross-sectional view) in Fig. 3.

[0011] As an example, as shown in FIG. 1, a surface-emitting laser element 10 according to one embodiment comprises a substrate 100, a cathode electrode 111 provided on one surface 100a (hereinafter also referred to as the "back surface") of the substrate 100, a first region A1 provided on the side opposite the cathode electrode side 111 of the surface 100a and in which a plurality of light-emitting portions LEP each having a mesa M are arranged, and a second region A2 arranged around the first region A1 on the side opposite the cathode electrode 111 of the surface 100a of the substrate 100. In the following description, the surface 100a of the substrate 100 is referred to as the lower side (-Z side), and the top side of each mesa M is referred to as the upper side (+Z side).

[0012] As an example, in the surface-emitting laser element 10, as shown in FIG. 3, second regions A2 (regions surrounded by two-dot chain lines) are arranged on both sides of the first region A1 in the Y-axis direction in plan view. In the first region A1, for example, a plurality of light emitting units LEP each having a mesa M are arranged two-dimensionally. Each light emitting unit LEP is a vertical cavity surface emitting laser (VCSEL). Here, as an example, the multiple light emitting units LEP are arranged in a matrix (square lattice) at equal intervals in both the X-axis direction and the Y-axis direction, but they may also be arranged in other layouts, such as a staggered or random pattern.

[0013] As can be seen from a combination of Figures 1 to 3, each mesa M has a generally cylindrical shape, for example, but may have other shapes such as a generally truncated circular cone shape, a generally truncated elliptical cone shape, or a generally truncated polygonal pyramid shape. The top surfaces of the mesas M are substantially flush. Here, the pitch (the distance between the centers of the two mesas M) between two adjacent mesas M in the X-axis direction or the Y-axis direction in the first region A1 is set to, for example, 10 μm or more and 50 μm or less (preferably about 20 μm).

[0014] 1 and 3, the second region A2 has, for example, a protruding portion PP whose upper surface is substantially flush with the upper surface of each mesa M. The protruding portion PP extends in the X-axis direction.

[0015] 1, the first and second regions A1 and A2 are provided at different positions in the in-plane direction of a laminated structure including the substrate 100, for example. In this laminated structure, for example, a first multilayer reflector 102, an active layer 105, and a second multilayer reflector 107 are laminated in this order on the opposite side (+Z side) from the cathode electrode 111 side (-Z side) of one surface 100a of the substrate 100. The stacking direction in this laminated structure coincides with the Z-axis direction.

[0016] Furthermore, in this laminated structure, as an example, a spacer layer 101 is disposed between the substrate 100 and the first multilayer reflector 102.

[0017] Furthermore, in this stacked structure, as an example, an oxide constriction layer 103 is disposed within the first multilayer film reflector 102.

[0018] Furthermore, in this stacked structure, as an example, first and second cladding layers 104 and 105 are arranged on both sides of the active layer 105 in the Z-axis direction between the first and second multilayer film reflectors 102 and 107. The second cladding layer 106 is located above the first cladding layer 104 (on the +Z side).

[0019] Furthermore, in this laminated structure, as an example, a contact layer 108 is disposed on the upper surface (surface on the +Z side) of the second multilayer film reflector 107.

[0020] Each light emitting portion LEP includes, for example, a first multilayer reflector 102, an active layer 105, and a second multilayer reflector 107. More specifically, each light emitting portion LEP includes, for example, a first multilayer reflector 102, an oxide constriction layer 103, a first cladding layer 104, an active layer 105, a second cladding layer 106, a second multilayer reflector 107, and a contact layer 108.

[0021] The mesa M of each light emitting portion LEP includes, for example, an upper portion of the first multilayer reflector 102, an active layer 105, and a second multilayer reflector 107. More specifically, the mesa M of each light emitting portion LEP includes, for example, an upper portion of the first multilayer reflector 102, an oxide constriction layer 103, a first cladding layer 104, an active layer 105, a second cladding layer 106, a second multilayer reflector 107, and a contact layer 108.

[0022] The second region A2 has the same layer structure as the light emitting portion LEP, for example. The protrusion portion PP of the second region A2 has substantially the same layer structure as the mesa M, for example.

[0023] The first region A1 and the second region A2 are covered with an insulating film 109. In the portion of the insulating film 109 that covers the top of each mesa M, a contact hole CH is provided.

[0024] An anode electrode 110 is provided on the insulating film 109. The anode electrode 110 is disposed so as to be in contact with the contact layer 108 through a contact hole CH provided on the top of each mesa M. More specifically, the anode electrode 110 is in contact with the contact layer 108 via the periphery of the contact hole CH of each mesa M. The inside of the anode electrode 110 on each mesa M (the center of the contact hole CH) serves as the emission port of the light emitting portion LEP having that mesa M. The emission direction of each light emitting portion LEP is the +Z direction.

[0025] (substrate) The substrate 100 is, for example, a GaAs substrate of a first conductivity type (for example, n-type).

[0026] (cathode electrode) The cathode electrode 111 (n-side electrode) is, for example, a common electrode provided for a plurality of light-emitting sections (here, all the light-emitting sections). The cathode electrode 111 is, for example, provided in a solid state over substantially the entire rear surface of the substrate 100. The cathode electrode 111 may have a single layer structure or a multilayer structure. The cathode electrode 111 is made of at least one metal (including alloys) selected from the group consisting of, for example, Au, Ag, Pd, Pt, Ni, Ti, V, W, Cr, Al, Cu, Zn, Sn, and In. When the cathode electrode 111 has a laminated structure, it is made of materials such as Ti / Au, Ti / Al, Ti / Al / Au, Ti / Pt / Au, Ni / Au, Ni / Au / Pt, Ni / Pt, Pd / Pt, and Ag / Pd. The cathode electrode 111 is electrically connected to the cathode side (negative side) of a laser driver including a driver IC.

[0027] (spacer layer) The spacer layer 101 is made of, for example, an AlGaAs-based compound semiconductor of a first conductivity type (for example, n-type). The spacer layer 101 is also called a "buffer layer."

[0028] (1st multilayer reflector) The first multilayer reflector 102 is, for example, a semiconductor multilayer reflector. A multilayer reflector is also called a distributed Bragg reflector. A semiconductor multilayer reflector, which is a type of multilayer reflector (distributed Bragg reflector), has low light absorption, high reflectivity, and electrical conductivity. The first multilayer reflector 102 is also called a lower DBR. The first multilayer reflector 102 is, for example, a semiconductor multilayer reflector of a first conductivity type, and has a structure in which multiple types (e.g., two types) of semiconductor layers (refractive index layers) with different refractive indices are alternately stacked with an optical thickness of ¼ (λ / 4) the oscillation wavelength λ. Each refractive index layer of the first multilayer reflector 102 is made of an AlGaAs-based compound semiconductor of the first conductivity type (e.g., n-type).

[0029] (oxidized constriction layer) The oxidized constriction layer 103 has, for example, a non-oxidized region 103a made of AlAs and an oxidized region 103b made of an oxide of AlAs (for example, Al2O3) that surrounds the periphery of the non-oxidized region 103a.

[0030] (First cladding layer) The first cladding layer 104 is made of an AlGaAs-based compound semiconductor of a first conductivity type (for example, n-type).

[0031] (active layer) The active layer 105 has a quantum well structure including a barrier layer and a quantum well layer made of, for example, an AlGaAs-based compound semiconductor. This quantum well structure may be a single quantum well structure (QW structure) or a multiple quantum well structure (MQW structure).

[0032] (Second cladding layer) The second cladding layer 106 is made of an AlGaAs-based compound semiconductor of a second conductivity type (for example, p-type).

[0033] The active layer 105 and the first and second cladding layers 104 and 106 form a resonator.

[0034] (Second multilayer reflector) The second multilayer reflector 107 is, for example, a semiconductor multilayer reflector of a second conductivity type, and has a structure in which multiple types (e.g., two types) of semiconductor layers (refractive index layers) with different refractive indices are alternately stacked with an optical thickness of ¼ wavelength of the oscillation wavelength. Each refractive index layer of the second multilayer reflector 107 is made of an AlGaAs-based compound semiconductor of the second conductivity type (e.g., p-type).

[0035] (contact layer) The contact layer 108 is made of a GaAs-based compound semiconductor of a second conductivity type (for example, p-type).

[0036] (insulating film) The insulating film 109 is made of a dielectric material such as SiO2, SiN, or SiON.

[0037] (anode electrode) 1 and 2, the anode electrode 110 (p-side electrode) is an electrode provided in common on the top of at least one mesa M adjacent to the second region A2 and on the tops of at least two mesas M not adjacent to the second region A2. Here, the anode electrode 110 is, for example, a common electrode shared by the mesas M of all the light-emitting units LEP. Note that the anode electrode 110 may be provided in common for each of a plurality of mesa rows arranged in the X-axis direction, each of which is made up of a plurality of mesas M arranged in the Y-axis direction in FIG. 3, or may be provided in common for at least two of the plurality of mesa rows. The anode electrode 110 is provided so as to cover the mesas M of the light emitting portions LEP (excluding the central portions of the tops of the mesas M) and part of the protrusion portions PP. The anode electrode 110 may have a single layer structure or a multilayer structure. The anode electrode 110 is made of at least one metal (including alloys) selected from the group consisting of, for example, Au, Ag, Pd, Pt, Ni, Ti, V, W, Cr, Al, Cu, Zn, Sn, and In. When the anode electrode 110 has a laminated structure, it is made of materials such as Ti / Au, Ti / Al, Ti / Al / Au, Ti / Pt / Au, Ni / Au, Ni / Au / Pt, Ni / Pt, Pd / Pt, and Ag / Pd. As an example, the portion of the anode electrode 110 that covers the second region A2 is electrically connected to the anode side (positive side) of a laser driver that includes a driver IC.

[0038] (First and second recesses) A first recess R1 is defined by two adjacent mesas M among the mesas M of the light emitting portion LEP (see FIGS. 1 and 2). A second recess R2 on the -Y side is defined by the mesa M (the mesa M furthest from the -Y side) of the multiple light emitting units LEP that is adjacent to the second region A2 on the -Y side and the second region A2 on the -Y side (see Figures 1 and 3). Similarly, a second recess R2 on the +Y side is defined by the mesa M (the mesa M closest to the +Y side) among the mesas M of the multiple light emitting units LEP that is adjacent to the second region A2 on the +Y side and the second region A2 on the +Y side (see Figure 3). Hereinafter, the mesas M adjacent to the second region A2 (for example, the mesa M on the most −Y side and the mesa M on the most +Y side) will be collectively referred to as the “outermost mesa”.

[0039] Each of the first and second recesses R1 and R2 has, for example, a cone shape (a shape that becomes deeper as it approaches the center).

[0040] The depth H2 of the second recess R2 is greater than the depth H1 of the first recess R1.

[0041] The depth dimension H1 of the first recess R1 is the distance from the part of the bottom of the first recess R1 closest to one surface 100a of the substrate 100 (closest to the -Z side) (e.g., the center) to the top surface of each mesa M (the surface on the +Z side). The bottom surface of the first recess R1 is located on the other surface 100b (+Z side surface) of the substrate 100 opposite (+Z side) to the one surface 100a side (-Z side). More specifically, the bottom surface of the first recess R1 is located inside the first multilayer film reflecting mirror 102.

[0042] The depth dimension H2 of the second recess R2 is the distance from the part of the bottom of the second recess R2 closest to one surface 100a of the substrate 100 (closest to the -Z side) (for example, the center) to the upper surface of each mesa M (the surface on the +Z side). The bottom surface of the second recess R2 is located on the other surface 100b (+Z side surface) of the substrate 100 opposite (+Z side) to the one surface 100a side (-Z side). More specifically, the bottom surface of the second recess R2 is located below (on the −Z side of) the bottom surface of the first recess R1 within the first multilayer film reflecting mirror 102.

[0043] The upper surface of each mesa M and the upper surface of each protrusion PP are substantially flush with each other, that is, the open ends of the first and second recesses R1, R2 are substantially flush with each other (located on the same plane).

[0044] Here, in a cross section (for example, the YZ cross section shown in FIG. 1) obtained by cutting two adjacent mesas M and the second region A2 in the first region A1 together, the width of the second recess R2 is larger than the width of the first recess R1. Note that, in this cross section, the widths of the first and second recesses R1 and R2 may be the same, or the width of the first recess R1 may be larger than the width of the second recess R2. The width of the first and second recesses R1 and R2 is, for example, several to several tens of μm.

[0045] 3, each of the mesas M other than the outermost mesa, excluding the mesas M furthest on the +X side and the mesas M furthest on the −X side, has an adjacent mesa M on each of the +X side, −X side, +Y side, and −Y side (there are adjacent mesas M on all four sides). In this case, in each of the mesas M other than the outermost mesa, the current flowing from the anode electrode 110 flows in the height direction (Z-axis direction) toward the cathode electrode 111 due to the influence of the adjacent mesas M.

[0046] The mesa M other than the outermost mesa has a separation groove ST on the +X side or the -X side, and has adjacent mesas M on three sides: the +Y side, the -Y side, and the +X side or the -X side (there are adjacent mesas M on three sides, and a separation groove ST is on one of them). In this case, in the mesa M other than the outermost mesa, the current flowing from the anode electrode 110 flows toward the cathode electrode 111 along the height direction (Z-axis direction).

[0047] The outermost mesa does not have an adjacent mesa M on the side of the adjacent second region A2. In this case, the current flowing from the anode electrode 110 in the outermost mesa tends to spread from the height direction (Z-axis direction) to the in-plane direction (XY plane) toward the second region A2, which may result in a lower electrical resistance than mesas M other than the outermost mesa (see FIG. 30). In this case, the current may concentrate in the outermost mesa, which may increase the variation in emission intensity between the outermost mesa and the other mesas M.

[0048] Therefore, in this embodiment, as described above, the depth dimension of the second recess R2 is made greater than the depth dimension of the first recess R1, thereby narrowing the current path toward the second region A2 and preventing the current flowing in the outermost mesa from spreading toward the second region A2 (see FIG. 29). This prevents the electrical resistance of the outermost mesa from decreasing, thereby preventing current from concentrating in the outermost mesa and ultimately reducing variations in emission intensity between the outermost mesa and the other mesas M. More specifically, it is possible to prevent the emission intensity of the outermost mesa from being higher than the emission intensity of the other mesas M.

[0049] The difference in depth (H2-H1) between the first and second recesses R1 and R2 can be used to set the degree of reduction in the difference in electrical resistance (resistance difference) between the outermost mesa and the mesas M other than the outermost mesa. Basically, the greater the difference H2-H1, the greater the reduction in the resistance difference. Conversely, the smaller the difference H2-H1, the smaller the reduction in the resistance difference. Therefore, it is preferable to set H2-H1 to a relatively small value when the resistance difference is small, for example, when the mesa pitch is relatively large (e.g., 30 to 50 μm), and it is preferable to set H2-H1 to a relatively large value when the resistance difference is large, for example, when the mesa pitch is relatively small (e.g., 10 to 30 μm).

[0050] Therefore, the difference H2-H1 in the depth dimension between the first and second recesses R1 and R2 may be set based on the distance between the centers of two adjacent mesas M (mesa pitch). In this case, it is preferable that the difference H2-H1 in the depth dimension between the first and second recesses R1, R2 is set to be larger as the distance between the centers of two adjacent mesas M becomes narrower.

[0051] (separation groove) An isolation trench ST for element isolation is formed at the end of each second region A2 opposite to the first region A1 side and at the ends of the first region A1 on the +X side and -X side (see FIGS. 1 and 3). The bottom surface of the separation groove ST is located within the first multilayer film reflector 102, for example.

[0052] 2. Operation of surface-emitting laser element according to an embodiment of the present technology In each light-emitting portion LEP of the surface-emitting laser element 10, when a current is injected into the active layer 105 from the anode side of the laser driver via the anode electrode 110, contact layer 108, second multilayer reflector 107, and second cladding layer 106, the active layer 105 emits light, and the light travels back and forth between the first and second multilayer reflectors 102 and 107 while being amplified by the active layer 105 and constricted by the oxide constriction layer 103, and when oscillation conditions are satisfied, it is emitted as laser light to the back side of the substrate 100. The current injected into the active layer 105 flows out to the cathode side of the laser driver via the first cladding layer 104, oxide constriction layer 103, first multilayer reflector 102, and cathode electrode 111.

[0053] 3.<First Example of Manufacturing Method of Surface-Emitting Laser Element According to One Embodiment of the Present Technology> A first example of a method for manufacturing the surface-emitting laser element 10 according to the embodiment will be described below with reference to the flowchart in FIG. 4 and the cross-sectional views in FIGS. Here, as an example, a semiconductor manufacturing method using semiconductor manufacturing equipment is used to simultaneously produce a plurality of surface-emitting laser elements 10 on a single wafer, which is the base material of the substrate 100. Next, the series of surface-emitting laser elements 10 is separated from one another by dicing, thereby obtaining a plurality of chip-shaped surface-emitting laser elements 10.

[0054] In the first step S1, a laminate L is produced. Specifically, a chemical vapor deposition (CVD) method, for example, a metal-organic chemical vapor deposition (MOCVD) method, is used to produce the laminate L by stacking a spacer layer 101, a first multilayer reflector 102 including a selectively oxidized layer 103S made of AlAs, a first cladding layer 104, an active layer 105, a second cladding layer 106, a second multilayer reflector 107, and a contact layer 108 in this order on a substrate 100, as shown in FIG.

[0055] In the next step S2, a mesa structure MS that will become the mesas M other than the outermost mesa is formed. Specifically, first, a resist pattern RP1 for forming mesa structures MS that will become mesas M other than the outermost mesa is formed on the contact layer 108 of the laminate L (see FIG. 6). Next, using this resist pattern RP1 as a mask, the stacked body L is etched by dry etching or wet etching to form the mesa structure MS (see FIG. 7). Here, etching is performed at least until the side surface of the selectively oxidized layer 103S is exposed (until the etched bottom surface, which will be the bottom surface of the first recess R1, is positioned below the selectively oxidized layer 103S within the first multilayer film reflector 102). By forming two adjacent mesa structures MS, the first recess R1 having a depth dimension H1 is formed. Finally, the resist pattern RP1 is removed by dry etching or wet etching (see FIG. 8).

[0056] In the next step S3, a mesa structure MS that will become the outermost mesa and a ridge structure PS that will become the ridge portion PP are formed. Specifically, first, a resist pattern RP2 for forming the mesa structure MS that will become the outermost mesa and the protrusion structure PS that will become the protrusion portion PP is formed on the laminate on which the mesa structure MS is formed (see FIG. 9). Next, using this resist pattern RP2 as a mask, the laminate is dry-etched or wet-etched to form a mesa structure MS that will become the outermost mesa and a protrusion structure PS that will become the protrusion portion PP (see FIG. 10). Here, etching is performed until the etched bottom surface that will become the bottom surface of the second recess R2 is positioned lower than the bottom surface of the first recess R1 within the first multilayer film reflector 102. By forming the mesa structure MS that will become the outermost mesa and the protrusion structure PS that will become the protrusion portion PP, the second recess R2 and separation groove ST with a depth dimension H2 are formed. Finally, the resist pattern RP2 is removed by dry etching or wet etching (see FIG. 11).

[0057] In the next step S4, the oxidized constriction layer 103 is formed. Specifically, the periphery of the selectively oxidized layer 103S of the mesa structure MS (see FIG. 11) is oxidized to generate the oxidized constriction layer 103 (see FIG. 12). More specifically, the mesa structure MS is exposed to a water vapor atmosphere, and the selectively oxidized layer 103S is oxidized from the side (selectively oxidizing Al in AlAs), forming the oxidized constriction layer 103 in which the non-oxidized region 103a is surrounded by the oxidized region 103b. At this time, the selectively oxidized layer 103S of the protrusion structure PS is also oxidized in the same manner. As a result, the mesa structure MS becomes the mesa M, forming the first region A1, and the protrusion structure PS becomes the protrusion portion PP, forming the second region A2.

[0058] In the next step S5, the insulating film 109 is formed (see FIG. 13). Specifically, the insulating film 109 is formed by vapor deposition, sputtering, or the like on the stacked body in which the first and second regions A1 and A2 are formed.

[0059] In the next step S6, a contact hole CH is formed (see FIG. 14). Specifically, the insulating film 109 covering the top of the mesa M is removed by dry etching or wet etching. As a result, the contact hole CH is formed, and the top of the mesa M (contact layer 108) is exposed.

[0060] In the next step S7, the anode electrode 110 is formed. Specifically, an electrode material for the anode electrode 110 is formed as a film by evaporation, sputtering, or the like on the insulating film 109 where the contact hole CH is opened, and patterning is performed by, for example, lift-off (see FIG. 15).

[0061] In the final step S8, the cathode electrode 111 is formed (see FIG. 16). Specifically, the rear surface of the substrate 100 is polished to make it thinner, and then an electrode material for the cathode electrode 111 is deposited as a solid film over substantially the entire rear surface of the substrate 100 by vapor deposition or sputtering.

[0062] After that, processing such as annealing is performed to form a plurality of surface-emitting laser elements 10 on one wafer. Thereafter, the surface-emitting laser elements 10 are separated into individual elements by dicing along the separation grooves ST, thereby obtaining a plurality of chip-shaped surface-emitting laser elements 10.

[0063] 4. <Second Example of Manufacturing Method of Surface-Emitting Laser Element According to One Embodiment of the Present Technology> A second example of the method for manufacturing the surface-emitting laser element 10 according to the embodiment will be described below with reference to the flowchart in FIG. 17 and the cross-sectional views in FIGS. 5 to 8, 11 to 16, and 18 to 22. Here, as an example, a semiconductor manufacturing method using semiconductor manufacturing equipment is used to simultaneously produce a plurality of surface-emitting laser elements 10 on a single wafer, which is the base material of the substrate 100. Next, the series of surface-emitting laser elements 10 is separated from one another by dicing, thereby obtaining a plurality of chip-shaped surface-emitting laser elements 10.

[0064] In the first step S11, a laminate L is produced. Specifically, a chemical vapor deposition (CVD) method, for example, a metal-organic chemical vapor deposition (MOCVD) method, is used to produce the laminate L by stacking a spacer layer 101, a first multilayer reflector 102 including a selectively oxidized layer 103S made of AlAs, a first cladding layer 104, an active layer 105, a second cladding layer 106, a second multilayer reflector 107, and a contact layer 108 in this order on a substrate 100, as shown in FIG.

[0065] In the next step S12, a mesa structure MS that will become the mesas M other than the outermost mesa is formed. Specifically, first, a resist pattern RP1 for forming mesa structures MS that will become mesas M other than the outermost mesa is formed on the contact layer 108 of the laminate L (see FIG. 6). Next, using this resist pattern RP1 as a mask, the stacked body L is etched by dry etching or wet etching to form the mesa structure MS (see FIG. 7). Here, etching is performed at least until the side surface of the selectively oxidized layer 103S is exposed (until the etched bottom surface, which will be the bottom surface of the first recess R1, is positioned below the selectively oxidized layer 103S within the first multilayer film reflector 102). By forming two adjacent mesa structures MS, the first recess R1 having a depth dimension H1 is formed. Finally, the resist pattern RP1 is removed by dry etching or wet etching (see FIG. 8).

[0066] In the next step S13, a mesa structure MS that will become the outermost mesa is formed. Specifically, first, a resist pattern RP3 for forming the mesa structure MS that will become the outermost mesa is formed on the stacked body on which the mesa structure MS is formed (see FIG. 18). Next, using this resist pattern RP3 as a mask, the laminate is etched by dry etching or wet etching to form a mesa structure MS that will become the outermost mesa (see FIG. 19). Here, etching is performed until the etched bottom surface that will become the bottom surface of the second recess R2 is positioned lower than the bottom surface of the first recess R1 within the first multilayer film reflector 102. By forming the mesa structure MS that will become the outermost mesa, the second recess R2 with a depth dimension H2 is formed. Finally, the resist pattern RP3 is removed by dry etching or wet etching (see FIG. 20).

[0067] In the next step S14, a protruding structure PS that will become the protruding portion PP is formed. Specifically, first, a resist pattern RP4 for forming the protrusion structures PS that will become the protrusion portions PP is formed on the laminate on which the mesa structures MS are formed (see FIG. 21). Next, using this resist pattern RP4 as a mask, the laminate is etched by dry etching or wet etching to form the protrusion structures PS that will become the protrusion portions PP (see FIG. 22). Here, etching is performed until the etched bottom surfaces that will become the bottom surfaces of the separation grooves ST are positioned below the selectively oxidized layer 103S in the first multilayer film reflector 102. The formation of the protrusion structures PS that will become the protrusion portions PP forms the separation grooves ST. Finally, the resist pattern RP4 is removed by dry etching or wet etching (see FIG. 11).

[0068] In the next step S15, the oxidized constriction layer 103 is formed. Specifically, the periphery of the selectively oxidized layer 103S of the mesa structure MS (see 11) is oxidized to generate the oxidized constriction layer 103 (see FIG. 12). More specifically, the mesa structure MS is exposed to a water vapor atmosphere, and the selectively oxidized layer 103S is oxidized from the side (selectively oxidizing Al in AlAs), forming the oxidized constriction layer 103 in which the non-oxidized region 103a is surrounded by the oxidized region 103b. At this time, the selectively oxidized layer 103S of the protrusion structure PS is also oxidized in the same manner. As a result, the mesa structure MS becomes the mesa M, forming the first region A1, and the protrusion structure PS becomes the protrusion portion PP, forming the second region A2.

[0069] In the next step S16, the insulating film 109 is formed (see FIG. 13). Specifically, the insulating film 109 is formed by vapor deposition, sputtering, or the like on the stacked body in which the first and second regions A1 and A2 are formed.

[0070] In the next step S17, a contact hole CH is formed (see FIG. 14). Specifically, the insulating film 109 covering the top of the mesa M is removed by dry etching or wet etching. As a result, the contact hole CH is formed, and the top of the mesa M (contact layer 108) is exposed.

[0071] In the next step S18, the anode electrode 110 is formed. Specifically, an electrode material for the anode electrode 110 is formed as a film by evaporation, sputtering, or the like on the insulating film 109 where the contact hole CH is opened, and patterning is performed by, for example, lift-off (see FIG. 15).

[0072] In the final step S19, the cathode electrode 111 is formed (see FIG. 16). Specifically, the rear surface of the substrate 100 is polished to make it thinner, and then an electrode material for the cathode electrode 111 is deposited as a solid film over substantially the entire rear surface of the substrate 100 by vapor deposition or sputtering.

[0073] After that, processing such as annealing is performed to form a plurality of surface-emitting laser elements 10 on one wafer. Thereafter, the surface-emitting laser elements 10 are separated into individual elements by dicing along the separation grooves ST, thereby obtaining a plurality of chip-shaped surface-emitting laser elements 10.

[0074] 5. <Third Example of Manufacturing Method of Surface-Emitting Laser Element According to One Embodiment of the Present Technology> Hereinafter, a third example of the method for manufacturing the surface-emitting laser element 10 according to the embodiment will be described with reference to the flowchart of FIG. 23, and the cross-sectional views of FIGS. 5 to 8, 11 to 16, and 24 to . Here, as an example, a semiconductor manufacturing method using semiconductor manufacturing equipment is used to simultaneously produce a plurality of surface-emitting laser elements 10 on a single wafer, which is the base material of the substrate 100. Next, the series of surface-emitting laser elements 10 is separated from one another by dicing, thereby obtaining a plurality of chip-shaped surface-emitting laser elements 10.

[0075] In the first step S21, a laminate L is produced. Specifically, a chemical vapor deposition (CVD) method, for example, a metal-organic chemical vapor deposition (MOCVD) method, is used to produce the laminate L by stacking a spacer layer 101, a first multilayer reflector 102 including a selectively oxidized layer 103S made of AlAs, a first cladding layer 104, an active layer 105, a second cladding layer 106, a second multilayer reflector 107, and a contact layer 108 in this order on a substrate 100, as shown in FIG.

[0076] In the next step S22, a mesa structure MS that will become the mesas M other than the outermost mesa is formed. Specifically, first, a resist pattern RP1 for forming mesa structures MS that will become mesas M other than the outermost mesa is formed on the contact layer 108 of the laminate L (see FIG. 6). Next, using this resist pattern RP1 as a mask, the stacked body L is etched by dry etching or wet etching to form the mesa structure MS (see FIG. 7). Here, etching is performed at least until the side surface of the selectively oxidized layer 103S is exposed (until the etched bottom surface, which will be the bottom surface of the first recess R1, is positioned below the selectively oxidized layer 103S within the first multilayer film reflector 102). By forming two adjacent mesa structures MS, the first recess R1 having a depth dimension H1 is formed. Finally, the resist pattern RP1 is removed by dry etching or wet etching (see FIG. 8).

[0077] In the next step S23, the separation trenches ST are formed. Specifically, first, a resist pattern RP5 for forming a separation groove ST is formed on the stacked body in which the mesa structure MS is formed (see FIG. 24). Next, the stacked body is dry-etched or wet-etched using this resist pattern RP5 as a mask to form the separation grooves ST (see FIG. 25). Here, etching is performed until the etched bottom surface, which will become the bottom surface of the separation grooves ST, is positioned below the selectively oxidized layer 103S in the first multilayer film reflector 102. Finally, the resist pattern RP5 is removed by dry etching or wet etching (see FIG. 26).

[0078] In the next step S24, a mesa structure MS that will become the outermost mesa and a ridge structure PS that will become the ridge portion PP are formed. Specifically, first, a resist pattern RP6 for forming the mesa structure MS that will become the outermost mesa and the protrusion structure PS that will become the protrusion portion PP is formed on a stacked body in which the mesa structure MS and the separation groove ST are formed (see FIG. 27). Next, using this resist pattern RP6 as a mask, the laminate is etched by dry etching or wet etching to form the mesa structure MS that will become the outermost mesa and the protrusion structure PS that will become the protrusion portion PP (see FIG. 28). Here, etching is performed until the etched bottom surface that will become the bottom surface of the second recess R2 is positioned below the bottom surface of the first recess R1 in the first multilayer film reflector 102. Finally, the resist pattern RP6 is removed by dry etching or wet etching (see FIG. 11).

[0079] In the next step S25, the oxidized constriction layer 103 is formed. Specifically, the periphery of the selectively oxidized layer 103S of the mesa structure MS (see FIG. 11) is oxidized to generate the oxidized constriction layer 103 (see FIG. 12). More specifically, the mesa structure MS is exposed to a water vapor atmosphere, and the selectively oxidized layer 103S is oxidized from the side (selectively oxidizing Al in AlAs), forming the oxidized constriction layer 103 in which the non-oxidized region 103a is surrounded by the oxidized region 103b. At this time, the selectively oxidized layer 103S of the protrusion structure PS is also oxidized in the same manner. As a result, the mesa structure MS becomes the mesa M, forming the first region A1, and the protrusion structure PS becomes the protrusion portion PP, forming the second region A2.

[0080] In the next step S26, the insulating film 109 is formed (see FIG. 13). Specifically, the insulating film 109 is formed by vapor deposition, sputtering, or the like on the stacked body in which the first and second regions A1 and A2 are formed.

[0081] In the next step S27, a contact hole CH is formed (see FIG. 14). Specifically, the insulating film 109 covering the top of the mesa M is removed by dry etching or wet etching. As a result, the contact hole CH is formed, and the top of the mesa M (contact layer 108) is exposed.

[0082] In the next step S28, the anode electrode 110 is formed. Specifically, an electrode material for the anode electrode 110 is formed into a film by evaporation, sputtering, or the like on the insulating film 109 where the contact hole CH is opened, and patterning is performed by, for example, a lift-off method (see FIG. 15).

[0083] In the final step S29, the cathode electrode 111 is formed (see FIG. 16). Specifically, the rear surface of the substrate 100 is polished to make it thinner, and then an electrode material for the cathode electrode 111 is deposited as a solid film over substantially the entire rear surface of the substrate 100 by vapor deposition or sputtering.

[0084] After that, processing such as annealing is performed to form a plurality of surface-emitting laser elements 10 on one wafer. Thereafter, the surface-emitting laser elements 10 are separated into individual elements by dicing along the separation grooves ST, thereby obtaining a plurality of chip-shaped surface-emitting laser elements 10.

[0085] In all of the first to third examples of the method for manufacturing the surface-emitting laser element 10 described above, the mesa structure MS that will become the mesas M other than the outermost mesa is formed by etching, and then the protrusion structure PS that will become the protrusion portion PP, the second recess R2, and the separation groove ST are formed by etching. However, this is not limited to this. For example, the mesa structure MS that will become the mesa M other than the outermost mesa, the protrusion structure PS that will become the protrusion portion PP, the second recess R2, and the separation groove ST may be formed simultaneously by etching. However, forming the first recess R1, the second recess R2, and the separation groove ST by separate etching as much as possible (preferably all of them) can improve the accuracy of the etching depth of each (position accuracy of the bottom surface).

[0086] 6. <Effects of surface-emitting laser element and manufacturing method thereof according to an embodiment of the present technology> The effects of the surface-emitting laser element 10 according to an embodiment of the present technology and the manufacturing method thereof will be described below.

[0087] A surface-emitting laser element 10 according to one embodiment comprises a substrate 100, a cathode electrode 111 provided on one surface 100a (back surface) of the substrate 100, a first region A1 provided on the side of the surface 100a opposite the cathode electrode 111 and in which a plurality of light-emitting units LEP having mesas M are arranged, and a second region A2 arranged around the first region A1 on the side of the surface 100a opposite the cathode electrode 111, wherein a depth dimension H1 of a first recess R1 defined by two adjacent mesas M of the plurality of light-emitting units LEP and the second region A2 is greater than a depth dimension H1 of a first recess R1 defined by two adjacent mesas M of the plurality of light-emitting units LEP. In this case, the current flowing through the outermost mesa is prevented from spreading toward the second region A2, which prevents the electrical resistance of the outermost mesa from decreasing, and ultimately prevents the current from concentrating in the outermost mesa (see Figure 29). As a result, the surface-emitting laser element 10 can reduce variations in light emission intensity between the light-emitting portion LEP adjacent to the second region A2 and the light-emitting portion LEP other than the light-emitting portion LEP.

[0088] On the other hand, in the surface-emitting laser element 10C of the comparative example shown in FIG. 30, the depth dimension H of the recess R defined by two adjacent mesas M among the mesas M of the multiple light-emitting portions is the same as the depth dimension H of the recess R defined by the mesa M (outermost mesa) adjacent to the protrusion PP among the multiple light-emitting portion mesas M and the protrusion PP. In this case, the current flowing through the outermost mesa cannot be prevented from spreading toward the protrusion PP, the electrical resistance of the outermost mesa decreases, and the current concentrates in the outermost mesa. As a result, it is not possible to reduce the variation in emission intensity between the light-emitting portion having the mesa adjacent to the protrusion PP and the light-emitting portions other than the mesa. This also applies to the surface-emitting laser element described in Patent Document 1.

[0089] The cathode electrode 111 is a common electrode provided in common to the plurality of light emitting portions LEP. In this case, the current flowing through each mesa M flows to the cathode electrode 111 side (the back surface side of the substrate 100), making the above-described configuration of the surface-emitting laser element 10 particularly effective.

[0090] The bottom surface of the second recess R2 is located closer to the surface 100a of the substrate 100 than the bottom surface of the first recess R1 in the direction perpendicular to the substrate 100 (Z-axis direction). This makes it possible to reliably reduce the variation in the emission intensity. Furthermore, the opening ends of the first and second recesses R1 and R2 are substantially flush with each other, which allows the first and second recesses R1 and R2 to be formed by etching the stack L produced by a single crystal growth (e.g., epitaxial growth).

[0091] The surface-emitting laser element 10 further includes an anode electrode 110 provided in contact with the top of at least one mesa M adjacent to the second region A2 and the tops of at least two mesas M not adjacent to the second region A2. In this case, the light-emitting units LEP including the mesas M are simultaneously driven with the same voltage, and even in this case, the variations in light emission intensity can be suppressed.

[0092] The distance between the centers of two adjacent mesas M (mesa pitch) is preferably 10 μm or more and 50 μm or less. In this case, since the mesa pitch is relatively small, the difference in resistance between the outermost mesa and the other mesas tends to be relatively large, making the configuration of the surface-emitting laser element 10 particularly effective.

[0093] The manufacturing method (first to third examples) of the surface-emitting laser element 10 includes the steps of: stacking a first multilayer reflector 102, an active layer, and a second multilayer reflector in this order on a substrate 100 to produce a laminate L; etching the laminate L to form a first region A1 in which a plurality of light-emitting portions LEP including mesas M are arranged, and a second region A2 around the first region A1; and forming a cathode electrode 111 on the surface of the substrate 100 opposite the surface facing the first multilayer reflector 102. In the step of forming the first and second regions A1, A2, the laminate is etched so that the depth dimension of the second recess R2 defined by a mesa M adjacent to the second region A2 and the second region A2 among the mesas M of the plurality of light-emitting portions LEP is larger than the depth dimension of the first recess R1 defined by two adjacent mesas M among the mesas M of the plurality of light-emitting portions LEP. According to the manufacturing method of the surface-emitting laser element 10, it is possible to manufacture a surface-emitting laser element capable of reducing variations in light emission intensity between the light-emitting portion LEP adjacent to the second region A2 and the light-emitting portion LEP other than the light-emitting portion LEP.

[0094] In the step of forming the cathode electrode 111, the cathode electrode 111 is formed, for example, in a solid form in at least the areas corresponding to the first and second areas A1 and A2 on the surface of the substrate 100 opposite to the surface on the first multilayer film reflector 102 side. This makes it possible to easily form the cathode electrode 111 common to the multiple light-emitting sections LEP.

[0095] 7. Surface-emitting laser elements according to first to ninth modifications of an embodiment of the present technology Surface-emitting laser elements 10-1 to 10-9 according to first to ninth modifications of an embodiment of the present technology will be described below with reference to the drawings.

[0096] (Surface-emitting laser element according to modification 1) FIG. 31 is a cross-sectional view of the surface-emitting laser element 10-1 of Modification 1 (a cross-sectional view corresponding to the cross-sectional view taken along line VV in FIG. 3 (FIG. 1)). As shown in FIG. 31, the surface-emitting laser element 10-1 according to the first modification has the same configuration as the surface-emitting laser element 10 of the embodiment, except that the bottom surface of the first recess R1 is located within the first multilayer film reflector 102 and the bottom surface of the second recess R2 is located within the substrate 100.

[0097] The surface-emitting laser element 10-1 provides substantially the same effects as the surface-emitting laser element 10 of the embodiment.

[0098] Here, the first and second multilayer film reflectors 102 and 107 are designed to have a higher resistivity than the substrate 100 in order to reduce free carrier loss. Therefore, in the surface-emitting laser element 10-1, under the condition that the difference in depth dimension (H2-H1) between the first and second recesses R1 and R2 is the same, the degree of reduction in the difference in electrical resistance (resistance difference) between the outermost mesa and the mesa M other than the outermost mesa is smaller than in the surface-emitting laser element 10 of the embodiment. However, because the bottom surface of the second recess R2 is located within the substrate 100 (because the second recess R2 is deep), the effect of suppressing the current from spreading toward the second region A2 is high.

[0099] The surface-emitting laser element 10-1 can be manufactured by the same manufacturing method as the surface-emitting laser element 10.

[0100] (Surface-emitting laser element according to modification 2) FIG. 32 is a cross-sectional view of the surface-emitting laser element 10-2 of Modification 2 (a cross-sectional view corresponding to the cross-sectional view taken along line VV in FIG. 3 (FIG. 1)). As shown in FIG. 32, the surface-emitting laser element 10-2 according to the second modification has the same configuration as the surface-emitting laser element 10 of the first embodiment, except that both the bottom surface of the first recess R1 and the bottom surface of the second recess R2 are located within the substrate 100.

[0101] The surface-emitting laser element 10-2 exhibits substantially the same effects as the surface-emitting laser element 10 of the embodiment, but under the same H2-H1 condition, the degree of reduction in the resistance difference is smaller than that of the surface-emitting laser element 10. However, since the bottom surface of the second recess R2 is located inside the substrate 100 (since the second recess R2 is deep), the effect of suppressing the current from spreading toward the second region A2 is high.

[0102] The surface-emitting laser element 10-2 can be manufactured by the same manufacturing method as the surface-emitting laser element 10.

[0103] (Surface-emitting laser element according to modification 3) FIG. 33 is a cross-sectional view of a surface-emitting laser element 10-3 of Modification 3 (a cross-sectional view corresponding to the cross-sectional view taken along line VV in FIG. 3 (FIG. 1)). As shown in FIG. 33, the surface-emitting laser element 10-3 according to the third modification has a configuration generally similar to that of the surface-emitting laser element 10 of the first embodiment, except that both the bottom surface of the first recess R1 and the bottom surface of the second recess R2 are located within the second multilayer film reflector 107.

[0104] In the surface-emitting laser device 10-3, the oxide constriction layer 103 is provided in the second multilayer film reflector 107. In the surface-emitting laser element 10-3, each mesa M and protrusion PP does not have an active layer 105.

[0105] The surface-emitting laser element 10-3 provides substantially the same effects as the surface-emitting laser element 10 of the embodiment. The surface-emitting laser element 10-3 can also be manufactured by the same manufacturing method as the surface-emitting laser element 10.

[0106] (Surface-emitting laser element according to modification 4) FIG. 34 is a cross-sectional view of a surface-emitting laser element 10-4 of Modification 4 (a cross-sectional view corresponding to the cross-sectional view taken along line VV in FIG. 3 (FIG. 1)). In the surface-emitting laser element 10-4 according to the fourth modification, both the bottom surface of the first recess R1 and the bottom surface of the second recess R2 are located within the first multilayer film reflector 107, as shown in FIG. In the surface-emitting laser element 10-4, H2-H1 is smaller than that in the surface-emitting laser element 10 of the embodiment.

[0107] The surface-emitting laser element 10-4 exhibits substantially the same effects as the surface-emitting laser element 10 of the embodiment, but the degree of reduction in the resistance difference is lower than that of the surface-emitting laser element 10 of the embodiment, and therefore is particularly effective when the difference in electrical resistance between the outermost mesa and the other mesas M is small (for example, when the mesa pitch is relatively large). The surface-emitting laser element 10-4 can also be manufactured by the same manufacturing method as the surface-emitting laser element 10.

[0108] (Surface-emitting laser element according to modification 5) FIG. 35 is a cross-sectional view of a surface-emitting laser element 10-5 of Modification 5 (a cross-sectional view corresponding to the cross-sectional view taken along line VV in FIG. 3 (FIG. 1)). As shown in FIG. 35, the surface-emitting laser element 10-5 according to the fifth modification has the same configuration as the surface-emitting laser element 10-1 according to the first modification, except for the size of H2-H1.

[0109] In the surface-emitting laser element 10-5, H2-H1 is larger than that in the surface-emitting laser element 10-1 of the first modification.

[0110] The surface-emitting laser element 10-5 exhibits substantially the same effects as the surface-emitting laser element 10 of the embodiment, but the degree of reduction in the resistance difference is greater than that of the surface-emitting laser element 10-1 of Modification 1, and is therefore particularly effective when the difference in electrical resistance between the outermost mesa and the other mesas M is large (for example, when the mesa pitch is relatively small).

[0111] The surface-emitting laser element 10-5 can also be manufactured by the same manufacturing method as the surface-emitting laser element 10 of the embodiment.

[0112] (Surface-emitting laser element according to modification 6) FIG. 36 is a cross-sectional view of a surface-emitting laser element 10-6 of Modification 6 (a cross-sectional view corresponding to the cross-sectional view taken along line VV in FIG. 3 (FIG. 1)). As shown in FIG. 36, the surface-emitting laser element 10-6 according to the sixth modification has the same configuration as the surface-emitting laser element 10 of the first embodiment, except that the bottom surface of the first recess R1 is located within the second multilayer reflector 107 and the bottom surface of the second recess R2 is located within the substrate 100.

[0113] In the surface-emitting laser element 10-6, an oxide constriction layer 103 is provided in the second multilayer film reflector 107. In the surface-emitting laser element 10-6, each mesa M does not have an active layer 105.

[0114] The surface-emitting laser element 10-6 exhibits substantially the same effects as the surface-emitting laser element 10 of the embodiment, but since H2-H1 is larger than that of the surface-emitting laser element 10 of the embodiment, the degree of reduction in the resistance difference is greater, and since the bottom surface of the second recess R2 is located within the substrate 100, the effect of suppressing the spread of current from the outermost mesa toward the second region A2 is high. That is, the surface-emitting laser element 10-6 is particularly effective when the mesa pitch is small and the difference in resistance between the outermost mesa and the other mesas M is large. The surface-emitting laser element 10-6 can also be manufactured by the same manufacturing method as the surface-emitting laser element 10 of the embodiment.

[0115] (Surface-emitting laser element according to modification 7) Fig. 37 is a cross-sectional view (part 1) of the surface-emitting laser element 10-7 of Modified Example 7. Fig. 38 is a cross-sectional view (part 2) of the surface-emitting laser element 10-7 of Modified Example 7. Fig. 39 is a plan view of the surface-emitting laser element 10-7 of Modified Example 7. Fig. 37 is a cross-sectional view (YZ cross-sectional view) taken along line V7-V7 in Fig. 39. Fig. 38 is a cross-sectional view (XZ cross-sectional view) taken along line W7-W7 in Fig. 39.

[0116] As shown in Figures 37 to 39, the surface-emitting laser element 10-7 of variant example 7 has a configuration similar to that of the surface-emitting laser element 10 of one embodiment, except that the second region A2 includes a dummy mesa DM adjacent to the mesa M (the outermost mesa of the first region A1) adjacent to the second region A2, and the mesa M and dummy mesa DM adjacent to the second region A2 define a second recess R2. The dummy mesa DM is a mesa that is provided in a non-light-emitting portion that is not energized and does not have a contact hole CH or an anode electrode 110.

[0117] More specifically, in the surface-emitting laser element 10-7, each second region A2 includes a dummy mesa DM provided between the protrusion PP and the first region A1, and the protrusion PP.

[0118] In the surface-emitting laser element 10-7, a second recess R2 is defined by the outermost mesa in the first region A1 and the dummy mesa DM in the second region A2.

[0119] The surface-emitting laser element 10-7 prevents current flowing in the mesa M (the outermost mesa in the first region A1) adjacent to the dummy mesa DM from spreading toward the dummy mesa DM. As a result, a decrease in the electrical resistance of the outermost mesa is prevented, and current concentration in the outermost mesa is prevented, thereby reducing variations in emission intensity between the outermost mesa and the mesas M other than the outermost mesa. The surface-emitting laser element 10-7 can also be manufactured by a manufacturing method generally similar to the manufacturing method of the surface-emitting laser element 10 of the embodiment.

[0120] (Surface-emitting laser element according to modification 8) FIG. 38 is a plan view of a surface-emitting laser element 10-8 according to the eighth modification.

[0121] In the surface-emitting laser element 10-8 according to the eighth modification, as shown in FIG. 40, the second region A2 has a frame-like shape in plan view (the region surrounded by the two-dot chain line in FIG. 40).

[0122] In the surface-emitting laser element 10-8, the YZ cross section taken through the second region A2 and the multiple mesas M is similar to the XZ cross section taken through the second region A2 and the multiple mesas M. The YZ cross section and XZ cross section of the surface-emitting laser element 10-8 are similar to the YZ cross sections of any of the surface-emitting laser elements 10, 10-1 to 10-6 of the embodiment and modifications 1 to 6.

[0123] The surface-emitting laser element 10-8 provides substantially the same effects as the surface-emitting laser element 10 of the embodiment. The surface-emitting laser element 10-8 can also be manufactured by the same manufacturing method as the surface-emitting laser element 10 of the embodiment.

[0124] (Surface-emitting laser element according to modification 9) FIG. 41 is a plan view of a surface-emitting laser element 10-9 according to the ninth modification.

[0125] In the surface-emitting laser element 10-9 according to the ninth modification, as shown in FIG. 41, the second region A2 has a frame-like shape in plan view (the region surrounded by the two-dot chain line in FIG. 41).

[0126] In the surface-emitting laser element 10-9, the YZ cross section obtained by cutting the second region A2 and the multiple mesas M together is similar to the XZ cross section obtained by cutting the second region A2 and the multiple mesas M together. The YZ cross section and XZ cross section of the surface-emitting laser element 10-9 are similar to the YZ cross section of the surface-emitting laser element 10-7 of the seventh modification.

[0127] The surface-emitting laser element 10-9 provides substantially the same effects as the surface-emitting laser element 10-7 of the seventh modification. The surface-emitting laser element 10-9 can also be manufactured by the same manufacturing method as the surface-emitting laser element 10 of the embodiment.

[0128] 8. <Another modified example of one embodiment of the present technology> The surface-emitting laser element according to the present technology is not limited to the configurations described in the above-described embodiment and each modified example, and can be modified as appropriate.

[0129] In the above-described embodiment and each modified example, the surface-emitting laser element of the present technology has been described as a surface-emitting type in which the light-emitting portion emits light from the top side of the mesa, but the surface-emitting laser element of the present technology can also be applied to a back-emitting type in which the light-emitting portion emits light to the back side of the substrate. In this case, it is necessary to provide openings as emission ports in the electrodes provided on the back side of the substrate at locations corresponding to the light-emitting portions.

[0130] In the above embodiment and each modification, an anode electrode is provided on the top side of the mesa M and a cathode electrode is provided on the back side of the substrate 100, but it is also possible to provide a cathode electrode on the top side of the mesa M and an anode electrode on the back side of the substrate 100. In this case, the conductivity types (p-type and n-type) must also be interchanged.

[0131] In the above embodiment and each modification, both the first and second multilayer film reflectors 102 and 107 are semiconductor multilayer film reflectors, but the present invention is not limited to this. For example, the first multilayer reflector 102 may be a semiconductor multilayer reflector, and the second multilayer reflector 107 may be a dielectric multilayer reflector. A dielectric multilayer reflector is also a type of distributed Bragg reflector. For example, the first multilayer reflector 102 may be a dielectric multilayer reflector, and the second multilayer reflector 107 may be a semiconductor multilayer reflector. For example, both the first and second multilayer film reflectors 102 and 107 may be dielectric multilayer film reflectors.

[0132] In the surface-emitting laser elements of the above-described embodiment and each of the modifications, the spacer layer 101 does not necessarily have to be provided.

[0133] In the surface-emitting laser elements of the above-described embodiment and each modification, the oxidized constriction layer 103 may be provided inside either the first or second cladding layer 104 or 106.

[0134] In the surface-emitting laser elements of the above-described embodiment and each of the modifications, the contact layer 108 does not necessarily have to be provided.

[0135] Parts of the configurations of the surface-emitting laser elements of the above-described embodiments and modifications may be combined within a range that does not contradict each other. For example, as in the surface-emitting laser element of Modification 10, the bottom surface of the first recess R1 may be located within the second multilayer reflector 107, and the bottom surface of the second recess R2 may be located within the first multilayer reflector 102.

[0136] In the above-described embodiments and modifications, the material, conductivity type, thickness, width, length, shape, size, arrangement, etc. of each component constituting the surface-emitting laser element can be changed as appropriate within the range in which the surface-emitting laser element functions.

[0137] 9. Application examples to electronic devices The technology according to the present disclosure (the present technology) can be applied to various products (electronic devices). For example, the technology according to the present disclosure may be realized as an element mounted on any type of moving body such as an automobile, an electric vehicle, a hybrid electric vehicle, a motorcycle, a bicycle, personal mobility, an airplane, a drone, a ship, or a robot.

[0138] The surface-emitting laser element according to the present technology can also be applied as a light source for devices that form or display images using laser light (for example, laser printers, laser copiers, projectors, head-mounted displays, head-up displays, etc.).

[0139] 10.<Example of applying a surface-emitting laser element to a distance measurement device> Hereinafter, application examples of the surface-emitting laser elements according to the above-described embodiment and each of the modifications will be described.

[0140] 42 shows an example of a schematic configuration of a distance measurement device 1000 including a surface-emitting laser element 10, as an example of an electronic device according to the present technology. The distance measurement device 1000 measures the distance to a subject S by a TOF (Time Of Flight) method. The distance measurement device 1000 includes the surface-emitting laser element 10 as a light source. The distance measurement device 1000 includes, for example, the surface-emitting laser element 10, a light-receiving device 125, lenses 115 and 135, a signal processing unit 140, a control unit 150, a display unit 160, and a storage unit 170.

[0141] The light receiving device 125 detects the light reflected by the subject S. The lens 115 is a collimating lens that collimates the light emitted from the surface-emitting laser element 10. The lens 135 is a condensing lens that collects the light reflected by the subject S and guides it to the light receiving device 125.

[0142] The signal processing unit 140 is a circuit for generating a signal corresponding to the difference between the signal input from the light receiving device 125 and the reference signal input from the control unit 150. The control unit 150 is configured to include, for example, a time-to-digital converter (TDC). The reference signal may be a signal input from the control unit 150, or may be an output signal of a detection unit that directly detects the output of the surface-emitting laser element 10. The control unit 150 is, for example, a processor that controls the surface-emitting laser element 10, the light receiving device 125, the signal processing unit 140, the display unit 160, and the storage unit 170. The control unit 150 is a circuit that measures the distance to the subject S based on the signal generated by the signal processing unit 140. The control unit 150 generates a video signal for displaying information about the distance to the subject S and outputs it to the display unit 160. The display unit 160 displays the information about the distance to the subject S based on the video signal input from the control unit 150. The control unit 150 stores the information about the distance to the subject S in the storage unit 170.

[0143] In this application example, instead of the surface-emitting laser element 10, any one of the surface-emitting laser elements 10-1, 10-2, 10-3, 10-4, 10-5, 10-6, 10-7, 10-8, and 10-9 can be applied to the distance measurement device 1000. 11.<Example of distance measurement device mounted on a moving object>

[0144] FIG. 43 is a block diagram showing a schematic configuration example of a vehicle control system, which is an example of a mobile object control system to which the technology according to the present disclosure can be applied.

[0145] The vehicle control system 12000 includes a plurality of electronic control units connected via a communication network 12001. In the example shown in Fig. 43, the vehicle control system 12000 includes a drive system control unit 12010, a body system control unit 12020, an outside-vehicle information detection unit 12030, an inside-vehicle information detection unit 12040, and an integrated control unit 12050. Also shown as functional components of the integrated control unit 12050 are a microcomputer 12051, an audio / video output unit 12052, and an in-vehicle network I / F (interface) 12053.

[0146] The drivetrain control unit 12010 controls the operation of devices related to the drivetrain of the vehicle in accordance with various programs. For example, the drivetrain control unit 12010 functions as a control device for a drive force generating device for generating a drive force of the vehicle, such as an internal combustion engine or a drive motor, a drive force transmission mechanism for transmitting the drive force to the wheels, a steering mechanism for adjusting the steering angle of the vehicle, a braking device for generating a braking force of the vehicle, etc.

[0147] The body system control unit 12020 controls the operation of various devices equipped in the vehicle body according to various programs. For example, the body system control unit 12020 functions as a control device for a keyless entry system, a smart key system, a power window device, or various lamps such as headlamps, backup lamps, brake lamps, turn signals, and fog lamps. In this case, radio waves transmitted from a portable device that serves as a key or signals from various switches may be input to the body system control unit 12020. The body system control unit 12020 receives these radio waves or signals and controls the vehicle's door lock device, power window device, lamps, etc.

[0148] The outside-vehicle information detection unit 12030 detects information outside the vehicle equipped with the vehicle control system 12000. For example, a distance measurement device 12031 is connected to the outside-vehicle information detection unit 12030. The distance measurement device 12031 includes the above-described distance measurement device 1000. The outside-vehicle information detection unit 12030 causes the distance measurement device 12031 to measure the distance to an object outside the vehicle (subject S), and acquires the distance data obtained thereby. The outside-vehicle information detection unit 12030 may perform object detection processing for people, cars, obstacles, signs, etc. based on the acquired distance data.

[0149] The in-vehicle information detection unit 12040 detects information inside the vehicle. For example, a driver state detection unit 12041 that detects the state of the driver is connected to the in-vehicle information detection unit 12040. The driver state detection unit 12041 includes, for example, a camera that captures an image of the driver, and the in-vehicle information detection unit 12040 may calculate the degree of fatigue or concentration of the driver based on the detection information input from the driver state detection unit 12041, or may determine whether the driver is dozing off.

[0150] The microcomputer 12051 can calculate control target values ​​for the driving force generating device, steering mechanism, or braking device based on the information inside and outside the vehicle acquired by the outside-vehicle information detection unit 12030 or the inside-vehicle information detection unit 12040, and output control commands to the drivetrain control unit 12010. For example, the microcomputer 12051 can perform cooperative control aimed at realizing the functions of an ADAS (Advanced Driver Assistance System), including vehicle collision avoidance or impact mitigation, following driving based on the distance between vehicles, maintaining vehicle speed, vehicle collision warning, or vehicle lane departure warning.

[0151] In addition, the microcomputer 12051 can perform cooperative control for the purpose of autonomous driving, which allows the vehicle to travel autonomously without relying on driver operation, by controlling the driving force generating device, steering mechanism, braking device, etc. based on information about the surroundings of the vehicle obtained by the outside vehicle information detection unit 12030 or the inside vehicle information detection unit 12040.

[0152] Furthermore, the microcomputer 12051 can output a control command to the body system control unit 12020 based on the information about the outside of the vehicle acquired by the outside information detection unit 12030. For example, the microcomputer 12051 can control the headlamps according to the position of a preceding vehicle or an oncoming vehicle detected by the outside information detection unit 12030, and perform cooperative control for the purpose of preventing glare, such as switching from high beams to low beams.

[0153] The audio / video output unit 12052 transmits at least one output signal of audio and / or video to an output device capable of visually or audibly notifying information to passengers in the vehicle or to the outside of the vehicle. In the example of Fig. 43, the output devices are exemplified by an audio speaker 12061, a display unit 12062, and an instrument panel 12063. The display unit 12062 may include, for example, at least one of an on-board display and a head-up display.

[0154] FIG. 44 is a diagram showing an example of the installation position of the distance measurement device 12031.

[0155] In FIG. 44, a vehicle 12100 has distance measurement devices 12101, 12102, 12103, 12104, and 12105 as a distance measurement device 12031.

[0156] Distance measuring devices 12101, 12102, 12103, 12104, and 12105 are provided, for example, at positions such as the front nose, side mirrors, rear bumper, back door, and the top of the windshield inside the vehicle cabin of vehicle 12100. Distance measuring device 12101 provided at the front nose and distance measuring device 12105 provided at the top of the windshield inside the vehicle cabin mainly acquire data ahead of vehicle 12100. Distance measuring devices 12102 and 12103 provided at the side mirrors mainly acquire data on the sides of vehicle 12100. Distance measuring device 12104 provided at the rear bumper or back door mainly acquires data behind vehicle 12100. The forward data acquired by distance measuring devices 12101 and 12105 is mainly used to detect preceding vehicles, pedestrians, obstacles, traffic lights, traffic signs, etc.

[0157] 44 shows an example of the detection ranges of the distance measurement devices 12101 to 12104. Detection range 12111 indicates the detection range of the distance measurement device 12101 provided on the front nose, detection ranges 12112 and 12113 indicate the detection ranges of the distance measurement devices 12102 and 12103 provided on the side mirrors, respectively, and detection range 12114 indicates the detection range of the distance measurement device 12104 provided on the rear bumper or back door.

[0158] For example, the microcomputer 12051 can extract, as a preceding vehicle, the three-dimensional object that is the closest three-dimensional object on the path of the vehicle 12100 and traveling in approximately the same direction as the vehicle 12100 at a predetermined speed (for example, 0 km / h or higher) by calculating the distance to each three-dimensional object within the detection ranges 12111 to 12114 and the change in this distance over time (relative speed with respect to the vehicle 12100) based on the distance data obtained from the distance measuring devices 12101 to 12104. Furthermore, the microcomputer 12051 can set a vehicle-to-vehicle distance to be maintained in advance in front of the preceding vehicle, and perform automatic braking control (including follow-up stop control), automatic acceleration control (including follow-up start control), etc. In this way, cooperative control can be performed for the purpose of automatic driving, which travels autonomously without relying on driver operation.

[0159] For example, the microcomputer 12051 classifies and extracts three-dimensional object data regarding three-dimensional objects into two-wheeled vehicles, ordinary vehicles, large vehicles, pedestrians, utility poles, and other three-dimensional objects based on distance data obtained from the distance measuring devices 12101 to 12104, and can use the data for automatic obstacle avoidance. For example, the microcomputer 12051 distinguishes obstacles around the vehicle 12100 into obstacles that are visible to the driver of the vehicle 12100 and obstacles that are difficult to see. The microcomputer 12051 then determines the collision risk, which indicates the degree of risk of collision with each obstacle, and when the collision risk is equal to or greater than a set value and a collision is possible, the microcomputer 12051 can provide driving assistance for collision avoidance by outputting an alarm to the driver via the audio speaker 12061 or the display unit 12062, or by performing forced deceleration or avoidance steering via the drivetrain control unit 12010.

[0160] An example of a mobile object control system to which the technology according to the present disclosure can be applied has been described above. The technology according to the present disclosure can be applied to the distance measurement device 12031 in the above-described configuration.

[0161] The present technology can also be configured as follows. (1) a substrate; an electrode provided on one surface of the substrate; a first region provided on the opposite side of the one surface from the electrode side, in which a plurality of light emitting units each having a mesa are arranged; a second region disposed around the first region on the opposite side of the one surface from the electrode side; Equipped with a surface-emitting laser element in which a depth dimension of a second recess defined by a mesa of the plurality of light-emitting portions adjacent to the second region and the second region is larger than a depth dimension of a first recess defined by two adjacent mesas of the plurality of light-emitting portion mesas. (2) The surface-emitting laser element according to (1), wherein the electrode is a common electrode provided in common to the plurality of light-emitting portions. (3) The surface-emitting laser element according to (1) or (2), wherein the second region includes a dummy mesa adjacent to a mesa adjacent to the second region, and the mesa adjacent to the second region and the dummy mesa define the second recess. (4) The surface-emitting laser element according to any one of (1) to (3), wherein the bottom surface of the second recess is located closer to the one surface than the bottom surface of the first recess in a direction perpendicular to the substrate. (5) The surface-emitting laser element according to any one of (1) to (4), wherein the opening ends of the first and second recesses are substantially flush with each other. (6) The surface-emitting laser element according to any one of (1) to (5), wherein the bottom surfaces of the first and second recesses are both located on the other surface of the substrate opposite to the one surface side. (7) A surface-emitting laser element described in any one of (1) to (6), wherein the bottom surface of the first recess is located on the other surface of the substrate opposite to the one surface side, and the bottom surface of the second recess is located within the substrate. (8) The surface-emitting laser element according to any one of (1) to (7), wherein the bottom surfaces of the first and second recesses are both located within the substrate. (9) A surface-emitting laser element according to any one of (1) to (8), wherein the first and second regions are provided at different positions in an in-plane direction of a laminated structure including the substrate, and in the laminated structure, a first multilayer reflector, an active layer, and a second multilayer reflector are laminated in this order on the side of the one surface opposite the electrode side. (10) The surface-emitting laser element according to (9), wherein the bottom surfaces of the first and second recesses are both located within the first multilayer film reflector. (11) The surface-emitting laser element according to (9), wherein the bottom surface of the first recess is located within the second multilayer reflector, and the bottom surface of the second recess is located within the first multilayer reflector. (12) The surface-emitting laser element according to (9), wherein the bottom surface of the first recess is located within the first multilayer reflector, and the bottom surface of the second recess is located within the substrate. (13) The surface-emitting laser element according to (9), wherein the bottom surface of the first recess is located within the second multilayer reflector, and the bottom surface of the second recess is located within the substrate. (14) The surface-emitting laser element according to (9), wherein the bottom surfaces of the first and second recesses are both located within the second multilayer film reflector. (15) The surface-emitting laser element according to any one of (1) to (14), wherein in a cross section obtained by cutting the two adjacent mesas and the second region together, the width of the second recess is larger than the width of the first recess. (16) The surface-emitting laser element according to any one of (1) to (15), wherein a separate electrode is provided in common on the top of at least one of the mesas adjacent to the second region and on the tops of at least two of the mesas not adjacent to the second region. (17) The surface-emitting laser element according to any one of (1) to (16), wherein the distance between the centers of the two adjacent mesas is 10 μm or more and 50 μm or less. (18) The surface-emitting laser element according to any one of (1) to (17), wherein the difference in depth between the first and second recesses is set based on the distance between the centers of the two adjacent mesas. (19) The surface-emitting laser element according to any one of (1) to (18), wherein the difference in depth between the first and second recesses is set to be larger as the distance between the centers of the two adjacent mesas becomes smaller. (20) An electronic device comprising the surface-emitting laser element according to any one of (1) to (19). (21) forming a laminate by stacking a first multilayer reflector, an active layer, and a second multilayer reflector on a substrate in this order; a step of etching the laminate to form a first region in which a plurality of light emitting portions including mesas are arranged and a second region around the first region; forming an electrode on a surface of the substrate opposite to a surface on the first multilayer film reflector side; Including, a step of forming the first and second regions by etching the laminate so that a depth dimension of a second recess defined by a mesa of the plurality of light-emitting portion adjacent to the second region and the second region is larger than a depth dimension of a first recess defined by two adjacent mesas of the plurality of light-emitting portion mesas. (22) A method for manufacturing a surface-emitting laser element according to claim 21, wherein in the step of forming the electrode, the electrode is formed in an area corresponding to at least the first and second areas on a surface of the substrate opposite to the surface on the first multilayer film reflector side. (23) A method for manufacturing a surface-emitting laser element according to (21) or (22), wherein in the step of forming the first and second regions, the laminate is etched to form one of the first and second regions, and then the laminate with the one region formed therein is etched to form the other of the first and second regions. [Explanation of symbols]

[0162] 10, 10-1 to 10-9: surface-emitting laser element, 100: substrate, 100a: one surface of the substrate, 100b: other surface of the substrate, 102: first multilayer reflector, 103: oxide constriction layer, 105: active layer, 107: second multilayer reflector, 110: anode electrode (another electrode), 111: cathode electrode (electrode), 1000: distance measuring device (electronic device), LEP: light-emitting portion, A1: first region, A2: second region, M: mesa, DM: dummy mesa, R1: first recess, R2: second recess, H1: depth dimension of the first recess, H2: depth dimension of the second recess.

Claims

1. A substrate; an electrode provided on one surface of the substrate; a first region provided on the opposite side of the one surface from the electrode side, in which a plurality of light emitting units each having a mesa are arranged; a second region disposed around the first region on the opposite side of the one surface from the electrode side; Equipped with each of the light-emitting section and the second region has a laminated structure in which a first multilayer reflector, an active layer, and a second multilayer reflector are laminated in this order on the surface opposite to the electrode side; the second region has a non-light-emitting protrusion adjacent to a mesa adjacent to the second region; a surface-emitting laser element in which a depth dimension of a second recess defined by a mesa among the plurality of light-emitting portion mesas adjacent to the protrusion and the protrusion is larger than a depth dimension of a first recess defined by two adjacent mesas among the plurality of light-emitting portion mesas.

2. 2. The surface-emitting laser element according to claim 1, wherein the electrode is a common electrode provided in common to the plurality of light-emitting portions.

3. the protruding portion is a dummy mesa, 2. The surface-emitting laser element according to claim 1, wherein the second recess is defined by the mesa adjacent to the second region and the dummy mesa.

4. 2. The surface-emitting laser element according to claim 1, wherein a bottom surface of the second recess is located closer to the one surface than a bottom surface of the first recess in a direction perpendicular to the substrate.

5. The surface-emitting laser element according to claim 1 , wherein the opening ends of the first and second recesses are substantially flush with each other.

6. 2. The surface-emitting laser element according to claim 1, wherein the bottom surfaces of the first and second recesses are both located on the other surface of the substrate opposite to the one surface side.

7. a bottom surface of the first recess is located on the other surface of the substrate opposite to the one surface side, The surface-emitting laser element according to claim 1 , wherein a bottom surface of the second recess is located within the substrate.

8. The surface-emitting laser element according to claim 1 , wherein the bottom surfaces of the first and second recesses are both located within the substrate.

9. 2. The surface-emitting laser element according to claim 1, wherein the first and second regions are provided at different positions in an in-plane direction of the laminated structure.

10. 10. The surface-emitting laser element according to claim 9, wherein the bottom surfaces of the first and second recesses are both located within the first multilayer film reflector.

11. a bottom surface of the first recess is located within the second multilayer film reflector; 10. The surface-emitting laser element according to claim 9, wherein a bottom surface of the second recess is located within the first multilayer film reflector.

12. a bottom surface of the first recess is located within the first multilayer film reflector, The surface-emitting laser element according to claim 9 , wherein a bottom surface of the second recess is located within the substrate.

13. a bottom surface of the first recess is located within the second multilayer film reflector; The surface-emitting laser element according to claim 9 , wherein a bottom surface of the second recess is located within the substrate.

14. 10. The surface-emitting laser element according to claim 9, wherein the bottom surfaces of the first and second recesses are both located within the second multilayer film reflector.

15. 2. The surface-emitting laser element according to claim 1, wherein in a cross section obtained by cutting the two adjacent mesas and the second region together, the width of the second recess is larger than the width of the first recess.

16. 2. The surface-emitting laser element according to claim 1, further comprising another electrode provided so as to contact a top portion of at least one of the mesas adjacent to the second region and a top portion of at least two of the mesas not adjacent to the second region.

17. 2. The surface-emitting laser element according to claim 1, wherein the distance between the centers of the two adjacent mesas is 10 μm or more and 50 μm or less.

18. An electronic device comprising the surface-emitting laser element according to claim 1 .

19. a step of laminating a first multilayer reflector, an active layer, and a second multilayer reflector in this order on a substrate to form a laminate; a step of etching the laminate to form a first region in which a plurality of light emitting portions including mesas are arranged and a second region surrounding the first region; forming an electrode on a surface of the substrate opposite to a surface on the first multilayer film reflector side; Including, each of the light-emitting section and the second region has a laminated structure in which the first multilayer reflector, the active layer, and the second multilayer reflector are laminated in this order; the second region has a non-light-emitting protrusion adjacent to a mesa adjacent to the second region; In the step of forming the first and second regions, the laminate is etched so that the depth dimension of a second recess defined by a mesa of the plurality of light-emitting portion adjacent to the protrusion and the protrusion is larger than the depth dimension of a first recess defined by two adjacent mesas of the plurality of light-emitting portion mesas.

20. 20. The method for manufacturing a surface-emitting laser element according to claim 19, wherein in the step of forming the electrode, the electrode is formed in an area corresponding to at least the first and second areas on a surface of the substrate opposite to a surface on the first multilayer film reflector side.

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