Sheet for manufacturing semiconductor devices

Abstract

A semiconductor device manufacturing sheet comprising a substrate, a pressure sensitive adhesive layer, an intermediate layer and a film adhesive, wherein: the pressure sensitive adhesive layer, the intermediate layer and the film adhesive are laminated in said order on the substrate; the intermediate layer comprises, as the main ingredient, a non-silicon resin having a weight average molecular weight of 100,000; and the maximum cross-sectional height of the surface of the substrate on the side opposite to the side on which the pressure sensitive adhesive layer is provided is at most 2,000 nm.

Description

[Technical Field]

[0001] The present invention relates to a sheet for manufacturing a semiconductor device. This application claims priority to Japanese Patent Application No. 2020-058734, filed on March 27, 2020, the contents of which are incorporated herein by reference. [Background technology]

[0002] When manufacturing a semiconductor device, a semiconductor chip with a film adhesive is used, which includes a semiconductor chip and a film adhesive provided on the back surface of the semiconductor chip. An example of a method for producing a semiconductor chip with a film-like adhesive is shown below.

[0003] That is, first, a dicing die bonding sheet is attached to the back surface of a semiconductor wafer. An example of a dicing die bonding sheet is one that includes a support sheet and a film-like adhesive provided on one side of the support sheet, allowing the support sheet to be used as a dicing sheet. There are several types of support sheets with different configurations, such as those that include a substrate and a pressure-sensitive adhesive layer provided on one side of the substrate, or those that consist only of a substrate. In a support sheet that includes a pressure-sensitive adhesive layer, the outermost surface on the pressure-sensitive adhesive layer side is the surface on which the film-like adhesive is provided. The dicing die bonding sheet is attached to the backside of a semiconductor wafer using the film-like adhesive therein.

[0004] Next, the semiconductor wafer and the film adhesive on the support sheet are both cut using a blade dicing machine. "Cutting" a semiconductor wafer is also called "splitting," and this separates the semiconductor wafer into the desired semiconductor chips. The film adhesive is cut along the periphery of the semiconductor chip. This results in a semiconductor chip with a film adhesive, which includes a semiconductor chip and the cut film adhesive on its backside. A group of semiconductor chips with a film adhesive is also obtained, which is composed of a plurality of these semiconductor chips with a film adhesive held in an aligned state on the support sheet.

[0005] Next, the semiconductor chip with the film-like adhesive attached is peeled off from the support sheet and picked up. If a support sheet with a curable adhesive layer is used, picking up is made easier by curing the adhesive layer to reduce its adhesiveness. In this manner, a semiconductor chip with a film adhesive for use in manufacturing a semiconductor device is obtained.

[0006] Another example of a method for producing a semiconductor chip with a film-like adhesive is shown below. That is, first, a backgrind tape (sometimes called a "surface protection tape") is applied to the circuit-forming surface of a semiconductor wafer. Next, a planned dividing point is set within the semiconductor wafer, and a laser beam is irradiated so as to focus on the area included in this point, thereby forming a modified layer within the semiconductor wafer. Next, the backside of the semiconductor wafer is ground using a grinder, thereby adjusting the thickness of the semiconductor wafer to a desired value. By utilizing the grinding force applied to the semiconductor wafer at this time, the semiconductor wafer is divided (singulated) at the formed portion of the modified layer to produce multiple semiconductor chips. This method of dividing a semiconductor wafer involving the formation of a modified layer is called Stealth Dicing (registered trademark), and is fundamentally different from laser dicing, which irradiates the semiconductor wafer with laser beam, scraping off the irradiated portion of the semiconductor wafer while cutting the semiconductor wafer from its surface.

[0007] Next, a die bonding sheet is attached to the ground backside (i.e., ground surface) of all of these semiconductor chips fixed on the backgrind tape. Examples of the die bonding sheet include those similar to the dicing die bonding sheet described above. It may be possible to design a die bonding sheet to have the same configuration as the dicing die bonding sheet, but not use it during dicing of the semiconductor wafer. The die bonding sheet is also attached to the backside of the semiconductor chip by the film-like adhesive therein.

[0008] Next, after removing the backgrind tape from the semiconductor chip, the die bonding sheet is expanded (cool expanded) in a direction parallel to its surface (e.g., the surface of the film adhesive attached to the semiconductor chip) while being cooled, thereby cutting the film adhesive along the outer periphery of the semiconductor chip. As a result of the above, a semiconductor chip with a film adhesive is obtained, which includes a semiconductor chip and the film adhesive provided on the back surface of the semiconductor chip after cutting.

[0009] Next, as in the case of using the blade dicing described above, the semiconductor chip with the film adhesive is separated from the support sheet and picked up, thereby obtaining a semiconductor chip with the film adhesive to be used in manufacturing a semiconductor device.

[0010] Still another example of the method for producing a semiconductor chip with a film-like adhesive is shown below. First, grooves are formed on one surface of the semiconductor wafer, which is the surface on which the circuit is formed, by a method such as blade dicing, laser dicing, water dicing, etc. This process is also known as half cutting.

[0011] Next, a backgrind tape (sometimes called a "surface protection tape") is applied to the circuit-forming surface of the semiconductor wafer. Next, the surface of the semiconductor wafer opposite to the circuit-forming surface is ground using a grinder until it reaches the formed grooves, thereby dividing (slicing) the semiconductor wafer into multiple semiconductor chips.

[0012] Next, one die bonding sheet is attached to the backside (in other words, the ground surface) of all of the semiconductor chips fixed on the backgrind tape after the above-mentioned grinding. The backgrind tape is then removed from the semiconductor chips, and the group of semiconductor chips is fixed onto the substrate via the film adhesive.

[0013] The film adhesive can be cut along the periphery of the semiconductor chip by laser irradiation or expanding. This method is called the dicing before grinding (DBG) method because it reverses the conventional process of cutting the wafer after back grinding. The above-mentioned Stealth Dicing (registered trademark) is also called SDBG (Stealth Dicing Before Grinding), and is considered to be a modified version of the pre-dicing method.

[0014] Both the dicing die bonding sheet and the die bonding sheet can be used to manufacture semiconductor chips with a film-like adhesive, ultimately enabling the manufacture of the desired semiconductor device. In this specification, the dicing die bonding sheet and the die bonding sheet are collectively referred to as "semiconductor device manufacturing sheets."

[0015] As an example of a sheet for manufacturing semiconductor devices, a dicing die bonding tape (corresponding to the dicing die bonding sheet) has been disclosed, which has a configuration in which a base layer (corresponding to the support sheet) and an adhesive layer (corresponding to the film-like adhesive) are laminated in direct contact (see Patent Document 1). In this dicing die bonding tape, the 90-degree peel strength of the base layer and adhesive layer at -15°C is adjusted to a specific range, so that the adhesive layer can be accurately separated by expanding. Also, because the 90-degree peel strength of the base layer and adhesive layer at 23°C is adjusted to a specific range, when this dicing die bonding tape is used, it is said that semiconductor chips with adhesive layers (corresponding to the semiconductor chips with the film-like adhesive) can be picked up without difficulty, and peeling of the semiconductor wafer and semiconductor chips from the adhesive layer can be suppressed during the pick-up process. [Prior art documents] [Patent documents]

[0016] [Patent Document 1] Japanese Patent Application Publication No. 2018-56289 Summary of the Invention [Problem to be solved by the invention]

[0017] A dicing die bonding sheet (semiconductor device manufacturing sheet) described in Patent Document 1 can be attached to a semiconductor chip obtained by the DBG method and expanded to obtain a semiconductor chip with a film-like adhesive.

[0018] In the expanding process, the surface of the substrate of the semiconductor device manufacturing sheet opposite to the side having the adhesive layer (the back surface of the substrate) is pushed up using an adsorption table and a push-up member, thereby expanding the sheet.

[0019] At this time, the group of semiconductor chips with the film adhesive attached thereto is fixed by sucking the rear surface of the base material of the semiconductor device manufacturing sheet using a suction table.

[0020] When using a suction table to suck the back surface of the substrate of a semiconductor device manufacturing sheet, a leak may occur in the suction of the suction table, causing the suction between the back surface of the substrate and the suction table to be released.

[0021] SUMMARY OF THE INVENTION It is therefore an object of the present invention to provide a sheet for manufacturing semiconductor devices in which the release of suction between the back surface of the substrate and the suction table is suppressed. [Means for solving the problem]

[0022] The present invention has the following aspects. (1) A substrate, a pressure-sensitive adhesive layer, an intermediate layer, and a film-like adhesive; the pressure-sensitive adhesive layer, the intermediate layer, and the film-like adhesive are laminated in this order on the substrate, the intermediate layer contains, as a main component, a non-silicon-based resin having a weight average molecular weight of 100,000 or less, The sheet for manufacturing semiconductor device, wherein the maximum cross-sectional height of the surface of the substrate opposite to the side having the pressure-sensitive adhesive layer is 2000 nm or less. (2) The sheet for manufacturing semiconductor device according to (1), wherein the surface of the substrate opposite to the side having the pressure-sensitive adhesive layer has a surface roughness of 200 nm or less. (3) A sheet for manufacturing a semiconductor device according to (1) or (2), wherein the haze of the support sheet consisting of the substrate and the adhesive layer is 10 or more, or the total light transmittance of the support sheet is 70% or less. (4) A sheet for manufacturing a semiconductor device, the sheet for manufacturing a semiconductor device is used to manufacture a semiconductor chip with a film-like adhesive by a method for manufacturing a semiconductor chip with a film-like adhesive, The manufacturing method includes: a step of forming a laminate by attaching the semiconductor device manufacturing sheet to a back surface of a semiconductor chip; a step of pushing up the entire region of the semiconductor device manufacturing sheet where the intermediate layer and the film-like adhesive are laminated from the substrate side using the suction table and a push-up member while sucking the surface of the substrate opposite to the side where the adhesive layer is provided at a temperature of 0°C or less, expanding and cutting the film-like adhesive, thereby obtaining a group of semiconductor chips with a film-like adhesive in a state where a plurality of semiconductor chips with the film-like adhesive are aligned on the intermediate layer; and a step of heating a peripheral portion of the expanded laminated sheet on which the semiconductor chip with the film adhesive is not placed, The area of ​​the semiconductor chip is 9mm 2 The sheet for manufacturing a semiconductor device according to any one of (1) to (3) below: (5) The sheet for manufacturing a semiconductor device according to any one of (1) to (4), wherein the pressure-sensitive adhesive layer contains at least one material selected from the group consisting of a colorant and a filler. (6) A step of forming a laminate by attaching the sheet for manufacturing a semiconductor device according to any one of (1) to (5) to the back surface of a semiconductor chip; a step of pushing up the entire region of the semiconductor device manufacturing sheet where the intermediate layer and the film-like adhesive are laminated from the substrate side using the suction table and a push-up member while sucking the surface of the substrate opposite to the side where the adhesive layer is provided at a temperature of 0°C or less, expanding and cutting the film-like adhesive, thereby obtaining a group of semiconductor chips with a film-like adhesive in a state where a plurality of semiconductor chips with the film-like adhesive are aligned on the intermediate layer; a step of heating the peripheral portion of the expanded laminated sheet on which the semiconductor chip with the film-like adhesive is not placed. [Effects of the Invention]

[0023] According to the present invention, a sheet for manufacturing semiconductor device is provided in which the release of suction between the base material and the suction table is suppressed. [Brief explanation of the drawings]

[0024] [Figure 1] 1 is a cross-sectional view schematically showing a sheet for manufacturing a semiconductor device according to one embodiment of the present invention. [Figure 2] FIG. 2 is a plan view of the sheet for manufacturing semiconductor device shown in FIG. [Figure 3A] 1A to 1C are cross-sectional views for schematically illustrating an example of a method of using a sheet for manufacturing a semiconductor device according to an embodiment of the present invention. [Figure 3B] 1A to 1C are cross-sectional views for schematically illustrating an example of a method of using a sheet for manufacturing a semiconductor device according to an embodiment of the present invention. [Figure 3C] 1A to 1C are cross-sectional views for schematically illustrating an example of a method of using a sheet for manufacturing a semiconductor device according to an embodiment of the present invention. [Figure 4A] 1A to 1C are cross-sectional views for schematically explaining an example of a method for manufacturing a semiconductor chip. [Figure 4B] 1A to 1C are cross-sectional views for schematically explaining an example of a method for manufacturing a semiconductor chip. [Figure 4C] 1A to 1C are cross-sectional views for schematically explaining an example of a method for manufacturing a semiconductor chip. [Figure 5A] FIG. 10 is a cross-sectional view for schematically explaining another example of a method of using the sheet for manufacturing a semiconductor device according to one embodiment of the present invention. [Figure 5B] FIG. 10 is a cross-sectional view for schematically explaining another example of a method of using the sheet for manufacturing a semiconductor device according to one embodiment of the present invention. [Figure 5C]FIG. 10 is a cross-sectional view for schematically explaining another example of a method of using the sheet for manufacturing a semiconductor device according to one embodiment of the present invention. [Figure 6A] 1A to 1C are cross-sectional views for schematically explaining a method for obtaining semiconductor chips by forming grooves in a semiconductor wafer. [Figure 6B] 1A to 1C are cross-sectional views for schematically explaining a method for obtaining semiconductor chips by forming grooves in a semiconductor wafer. [Figure 6C] 1A to 1C are cross-sectional views for schematically explaining a method for obtaining semiconductor chips by forming grooves in a semiconductor wafer. [Figure 7] FIG. 10 is a plan view schematically showing an evaluation object for explaining the measurement points of the kerf width when evaluating the kerf retention in the examples. DETAILED DESCRIPTION OF THE INVENTION

[0025] ◇ Sheets for semiconductor device manufacturing A semiconductor device manufacturing sheet according to one embodiment of the present invention comprises a substrate, an adhesive layer, an intermediate layer, and a film-like adhesive, and is configured by laminating the adhesive layer, intermediate layer, and film-like adhesive in this order on the substrate, and the intermediate layer contains a non-silicon-based resin having a weight-average molecular weight of 100,000 or less as its main component.

[0026] The semiconductor device manufacturing sheet of this embodiment is used as a die bonding sheet by being attached to a group of semiconductor chips obtained by the DBG method or the like described above. The sheet for manufacturing semiconductor device includes the intermediate layer, and the maximum cross-sectional height of the surface of the substrate opposite to the side on which the pressure-sensitive adhesive layer is provided (the back surface of the substrate) is 2000 nm or less. This makes it possible to prevent the suction between the rear surface of the substrate and the suction table from being released. As a result, at a temperature of 0°C or below, the surface of the substrate of the semiconductor device manufacturing sheet attached to the group of semiconductor chips opposite the side having the adhesive layer (the back surface of the substrate) is adsorbed by an adsorption table, and the substrate is pushed up from the adsorption table and a push-up member to expand, thereby allowing the film-like adhesive to be cut accurately at the desired location and reducing cutting defects.

[0027] In addition, while the back surface of the substrate is adsorbed by the adsorption table, the entire area where the intermediate layer and film-like adhesive of the expanded semiconductor device manufacturing sheet are laminated is pushed up from the substrate side by the adsorption table and push-up member, and the surface of the semiconductor chip is adsorbed and pulled up by the detaching means to be picked up, making pickup easier.

[0028] Furthermore, when the semiconductor device manufacturing sheet of this embodiment is used as a die bonding sheet and dicing (stealth dicing (registered trademark)) involving the formation of a modified layer on a semiconductor wafer is performed, because the semiconductor device manufacturing sheet has the intermediate layer, the semiconductor device manufacturing sheet can be subsequently stretched in a direction parallel to its surface (for example, the surface of the film-like adhesive that is attached to the semiconductor chip), a process known as expanding, so that the film-like adhesive can be cut accurately at the desired location and cutting defects can be suppressed.

[0029] In this way, the semiconductor device manufacturing sheet of this embodiment suppresses the generation of cutting chips from the substrate and intermediate layer during blade dicing, and suppresses poor cutting of the film-like adhesive during the expanding process, and has the property of suppressing the occurrence of defects when dividing semiconductor wafers, making it excellently suited to dividing semiconductor wafers.

[0030] On the other hand, when the semiconductor device manufacturing sheet of this embodiment is used as a dicing die bonding sheet and blade dicing is performed, the semiconductor device manufacturing sheet having the intermediate layer can easily prevent the blade from reaching the substrate, and the generation of whisker-like cutting debris (also known as whiskers; hereinafter, these may be simply referred to as "cutting debris" and not limited to those derived from the substrate) from the substrate can be suppressed. Furthermore, since the main component of the intermediate layer cut by the blade is a non-silicon-based resin having a weight-average molecular weight of 100,000 or less, particularly a weight-average molecular weight of 100,000 or less, the generation of the cutting debris from the intermediate layer can also be suppressed.

[0031] In this specification, unless otherwise specified, the "weight average molecular weight" is a polystyrene equivalent value measured by gel permeation chromatography (GPC).

[0032] The method of using the sheet for manufacturing semiconductor device of this embodiment will be described in detail later.

[0033] The sheet for manufacturing a semiconductor device according to the present embodiment will be described in detail below with reference to the drawings. Note that the drawings used in the following description may show enlarged essential parts for the sake of convenience in order to make the features of the present invention easier to understand, and the dimensional ratios of the components may not necessarily be the same as those in reality.

[0034] FIG. 1 is a cross-sectional view that schematically shows a sheet for manufacturing a semiconductor device according to one embodiment of the present invention, and FIG. 2 is a plan view of the sheet for manufacturing a semiconductor device shown in FIG. In FIG. 2 and subsequent figures, the same components as those shown in the figures already described are given the same reference numerals as in the figures already described, and detailed description thereof will be omitted.

[0035] The semiconductor device manufacturing sheet 101 shown here includes a substrate 11, and is configured by laminating, in this order, a pressure-sensitive adhesive layer 12, an intermediate layer 13, and a film-like adhesive 14 on the substrate 11. The semiconductor device manufacturing sheet 101 further includes a release film 15 on a surface 14a of the film-like adhesive 14 opposite to the side on which the intermediate layer 13 is provided (hereinafter, sometimes referred to as the "first surface").

[0036] In the semiconductor device manufacturing sheet 101, a pressure-sensitive adhesive layer 12 is provided on one surface (sometimes referred to herein as the "first surface") 11a of a substrate 11, an intermediate layer 13 is provided on a surface (sometimes referred to herein as the "first surface") 12a of the pressure-sensitive adhesive layer 12 opposite to the side on which the substrate 11 is provided, a film-like adhesive 14 is provided on a surface (sometimes referred to herein as the "first surface") 13a of the intermediate layer 13 opposite to the side on which the pressure-sensitive adhesive layer 12 is provided, and a release film 15 is provided on the first surface 14a of the film-like adhesive 14. In this way, the semiconductor device manufacturing sheet 101 is configured by laminating the substrate 11, the pressure-sensitive adhesive layer 12, the intermediate layer 13, and the film-like adhesive 14 in this order in the thickness direction.

[0037] The semiconductor device manufacturing sheet 101 is used by removing the release film 15 and attaching the first surface 14a of the film-like adhesive 14 therein to the back surface of a semiconductor wafer, a semiconductor chip, or a semiconductor wafer that has not been completely divided (not shown).

[0038] In this specification, for both semiconductor wafers and semiconductor chips, the surface on which circuits are formed is referred to as the "circuit-forming surface," and the surface opposite the circuit-forming surface is referred to as the "back surface."

[0039] In this specification, a laminate having a structure in which a substrate and a pressure-sensitive adhesive layer are laminated in the thickness direction thereof, without an intermediate layer, is sometimes referred to as a "support sheet." In Figure 1, the support sheet is indicated by the reference numeral 1. Furthermore, a laminate having a structure in which a substrate, a pressure-sensitive adhesive layer, and an intermediate layer are stacked in this order in the thickness direction may be referred to as a "laminate sheet." In Fig. 1, the laminate sheet is indicated by the reference numeral 10. The laminate of the support sheet and the intermediate layer is included in the laminate sheet.

[0040] The maximum cross-sectional height Rt of the surface of the substrate opposite to the side on which the adhesive layer is provided (the back surface 11b of the substrate in FIG. 1) is 2000 nm or less, preferably 1800 nm or less, and more preferably 1600 nm or less. By setting the maximum cross-sectional height Rt of the back surface 11b of the substrate to be equal to or less than the upper limit value, it is possible to prevent the release of suction between the substrate and the suction table when the back surface of the substrate is suctioned using the suction table.

[0041] By preventing the release of suction between the back surface of the substrate and the suction table, the process can proceed more reliably to the step of heating the peripheral portion of the laminated sheet where the semiconductor chips with film adhesive are not mounted, thereby maintaining the distance between adjacent semiconductor chips (i.e., the kerf width).

[0042] In addition, by preventing the release of suction between the back surface of the substrate and the suction table, the entire area where the intermediate layer and film-like adhesive of the expanded semiconductor device manufacturing sheet are laminated can be pushed up from the substrate side by the suction table and push-up member while the back surface of the substrate is suctioned by the suction table, and the surface of the semiconductor chip can be picked up by suction and lifting it up using a detaching means, making it easier to pick up the semiconductor chip.

[0043] The lower limit of the maximum cross-sectional height Rt of the rear surface 11b of the substrate is not particularly limited, but can be set to, for example, 100 nm.

[0044] The surface roughness Ra of the back surface 11b of the substrate is preferably 200 nm or less, more preferably 175 nm or less, and even more preferably 150 nm or less. By keeping the surface roughness Ra of the back surface 11b of the substrate at or below the upper limit, it is possible to prevent the substrate from releasing from the suction table when the suction table is used to suction the back surface of the substrate following the expanding process, thereby maintaining the kerf width.

[0045] The lower limit of the surface roughness Ra of the rear surface 11b of the substrate is not particularly limited, but can be set to, for example, 5 nm.

[0046] Generally, the smaller the size of the semiconductor chip, the greater the ratio of the area of ​​the gap between adjacent semiconductor chips to the total area of ​​the semiconductor device manufacturing sheet, making it more difficult to adsorb the back surface of the substrate using a suction table.

[0047] The semiconductor device manufacturing sheet 101 of this embodiment has an area of ​​9 mm 2 Even when a semiconductor chip having the following structure is used, the release of suction between the substrate and the suction table can be sufficiently suppressed.

[0048] The haze of the support sheet is preferably 10 or more, or the total light transmittance of the support sheet is preferably 70% or less. More preferably, the haze of the support sheet is 11 or more, or the total light transmittance of the support sheet is 65% or less. More preferably, the haze of the support sheet is 11.5 or more, or the total light transmittance of the support sheet is 63% or less.

[0049] The upper limit of the haze of the support sheet is not particularly limited, but can be set to 50, for example. The lower limit of the total light transmittance of the support sheet is not particularly limited, but can be, for example, 30%.

[0050] As will be described in detail later, a tape mounter is used when attaching the semiconductor device manufacturing sheet to a group of semiconductor chips. At this time, the tape mounter recognizes the peripheral edge of the area (non-laminated area) on the first surface 12a of the pressure-sensitive adhesive layer 12 where the intermediate layer 13 and the film-like adhesive 14 are not laminated. When the haze of the support sheet is equal to or greater than the lower limit or the total light transmittance of the support sheet is equal to or less than the upper limit, the peripheral edge of the non-laminated region can be easily recognized by a tape mounter, and as a result, the semiconductor device manufacturing sheet can be more reliably attached to a semiconductor wafer.

[0051] When viewed from above, the intermediate layer 13 and the film-like adhesive 14 both have a circular planar shape, and the diameter of the intermediate layer 13 and the diameter of the film-like adhesive 14 are the same. In the semiconductor device manufacturing sheet 101, the intermediate layer 13 and the film-like adhesive 14 are arranged so that their centers coincide, in other words, so that the positions of the outer peripheries of the intermediate layer 13 and the film-like adhesive 14 coincide in the radial direction.

[0052] The first surface 13a of the intermediate layer 13 and the first surface 14a of the film-like adhesive 14 both have areas smaller than the first surface 12a of the pressure-sensitive adhesive layer 12. The width W 13 (i.e., diameter) and the width W of the film adhesive 14 14 The maximum values ​​(i.e., diameters) of the first surface 12a of the adhesive layer 12 are all smaller than the maximum width of the adhesive layer 12 and the maximum width of the base material 11. Therefore, in the sheet 101 for manufacturing semiconductor device, a portion of the first surface 12a of the adhesive layer 12 is not covered by the intermediate layer 13 and the film-like adhesive 14. In such an area of ​​the first surface 12a of the adhesive layer 12 where the intermediate layer 13 and the film-like adhesive 14 are not laminated, the release film 15 is laminated in direct contact therewith, and when the release film 15 is removed, this area is exposed (hereinafter in this specification, this area may be referred to as the "non-laminated area"). In addition, in the semiconductor device manufacturing sheet 101 provided with the release film 15, there may or may not be areas of the adhesive layer 12 that are not covered by the intermediate layer 13 and the film-like adhesive 14 where the release film 15 is not laminated, as shown here.

[0053] The semiconductor device manufacturing sheet 101, in which the film-like adhesive 14 is uncut and attached to the semiconductor wafer or semiconductor chip or the like by the film-like adhesive 14, can be fixed by attaching a portion of the non-laminated region of the pressure-sensitive adhesive layer 12 therein to a jig such as a ring frame for fixing a semiconductor wafer. Therefore, there is no need to provide a separate jig adhesive layer on the semiconductor device manufacturing sheet 101 to fix the semiconductor device manufacturing sheet 101 to the jig. Furthermore, because there is no need to provide a jig adhesive layer, the semiconductor device manufacturing sheet 101 can be manufactured inexpensively and efficiently.

[0054] Although the absence of a jig adhesive layer in the semiconductor device manufacturing sheet 101 provides advantageous effects, the sheet may also include a jig adhesive layer. In this case, the jig adhesive layer is provided in a region near the periphery of the surface of any of the layers constituting the semiconductor device manufacturing sheet 101. Examples of such a region include the non-laminated region on the first surface 12a of the pressure-sensitive adhesive layer 12.

[0055] The adhesive layer for the jig may be a known one, for example, a single-layer structure containing an adhesive component, or a multi-layer structure in which layers containing adhesive components are laminated on both sides of a core sheet.

[0056] Furthermore, as will be described later, when the semiconductor device manufacturing sheet 101 is stretched in a direction parallel to its surface (for example, the first surface 12a of the pressure-sensitive adhesive layer 12), that is, when so-called expanding is performed, the presence of the non-laminated region on the first surface 12a of the pressure-sensitive adhesive layer 12 makes it easy to expand the semiconductor device manufacturing sheet 101. This not only makes it easy to cut the film-like adhesive 14, but also may prevent the intermediate layer 13 and the film-like adhesive 14 from peeling from the pressure-sensitive adhesive layer 12.

[0057] In the sheet 101 for manufacturing semiconductor device, the intermediate layer 13 contains a non-silicon-based resin having a weight-average molecular weight of 100,000 or less as a main component.

[0058] The semiconductor device manufacturing sheet of this embodiment is not limited to that shown in Figures 1 and 2, and some of the configurations shown in Figures 1 and 2 may be changed, deleted, or added within the scope that does not impair the effects of the present invention.

[0059] For example, the sheet for manufacturing a semiconductor device of this embodiment may include layers other than the substrate, pressure-sensitive adhesive layer, intermediate layer, film-like adhesive, release film, and jig adhesive layer. However, the sheet for manufacturing a semiconductor device of this embodiment preferably includes a pressure-sensitive adhesive layer in direct contact with the substrate, an intermediate layer in direct contact with the pressure-sensitive adhesive layer, and a film-like adhesive in direct contact with the intermediate layer, as shown in FIG.

[0060] For example, in the semiconductor device manufacturing sheet of this embodiment, the planar shapes of the intermediate layer and the film-like adhesive may be shapes other than circular, and the planar shapes of the intermediate layer and the film-like adhesive may be the same as or different from each other. Furthermore, the area of ​​the first surface of the intermediate layer and the area of ​​the first surface of the film-like adhesive are preferably both smaller than the area of ​​the surface of the layer closer to the substrate than these (for example, the first surface of the pressure-sensitive adhesive layer), and may be the same as or different from each other. Furthermore, the positions of the outer peripheries of the intermediate layer and the film-like adhesive may or may not coincide in the radial direction.

[0061] Next, each layer constituting the semiconductor device manufacturing sheet of this embodiment will be described in more detail.

[0062] ○Base material The substrate is in the form of a sheet or a film. The maximum cross-sectional height Rt of the surface of the substrate opposite to the side provided with the pressure-sensitive adhesive layer (the back surface of the substrate) is 2000 nm or less, preferably 1800 nm or less, and more preferably 1600 nm or less. The lower limit of the maximum cross-sectional height Rt of the surface of the substrate opposite to the side on which the pressure-sensitive adhesive layer is provided (the back surface of the substrate) is not particularly limited, but can be, for example, 100 nm.

[0063] The surface roughness Ra of the substrate on the surface opposite to the side on which the pressure-sensitive adhesive layer is provided (the back surface of the substrate) is preferably 200 nm or less, more preferably 175 nm or less, and even more preferably 150 nm or less. The lower limit of the surface roughness Ra of the surface of the substrate opposite to the side on which the pressure-sensitive adhesive layer is provided (the back surface of the substrate) is not particularly limited, but can be, for example, 5 nm.

[0064] The substrate may be produced, for example, by sandwiching a raw substrate between two rolls and passing the raw substrate between the roll surfaces while rotating the rolls. By adjusting the Rt and Ra of the roll surface that contacts the raw substrate, a substrate having a surface with the desired Rt and Ra can be produced.

[0065] Alternatively, the substrate may be manufactured by pressing a raw substrate against the surface of a roll, a so-called embossing method, and by adjusting the Rt and Ra of the roll surface, a substrate having a surface with the desired Rt and Ra can be manufactured.

[0066] The constituent material of the substrate is preferably various resins, and specific examples thereof include polyethylene (low-density polyethylene (LDPE), linear low-density polyethylene (LLDPE), high-density polyethylene (HDPE, etc.)), polypropylene (PP), polybutene, polybutadiene, polymethylpentene, styrene-ethylenebutylene-styrene block copolymer, polyvinyl chloride, vinyl chloride copolymer, polyethylene terephthalate (PET), polybutylene terephthalate (PBT), polyurethane, polyurethane acrylate, polyimide (PI), ionomer resin, ethylene-(meth)acrylic acid copolymer, ethylene-(meth)acrylic acid ester copolymer, ethylene copolymers other than ethylene-(meth)acrylic acid copolymer and ethylene-(meth)acrylic acid ester copolymer, polystyrene, polycarbonate, fluororesin, and water-added, modified, crosslinked, or copolymerized products of any of these resins.

[0067] In this specification, the term "(meth)acrylic acid" encompasses both "acrylic acid" and "methacrylic acid." The same applies to terms similar to (meth)acrylic acid. For example, "(meth)acrylate" encompasses both "acrylate" and "methacrylate," and "(meth)acryloyl group" encompasses both "acryloyl group" and "methacryloyl group."

[0068] The resin constituting the substrate may be one type only, or two or more types, and when two or more types are used, the combination and ratio thereof can be selected arbitrarily.

[0069] The substrate may consist of one layer (single layer) or two or more layers. When the substrate consists of multiple layers, these multiple layers may be the same or different from each other, and the combination of these multiple layers is not particularly limited as long as it does not impair the effects of the present invention. In this specification, not only in the case of a substrate, "multiple layers may be the same or different from one another" means "all layers may be the same, all layers may be different, or only some layers may be the same," and further, "multiple layers are different from one another" means "at least one of the constituent materials and thicknesses of each layer is different from one another."

[0070] The thickness of the substrate can be appropriately selected depending on the purpose, but is preferably 50 to 300 μm, and more preferably 60 to 150 μm. When the thickness of the substrate is equal to or greater than the lower limit, the structure of the substrate becomes more stable. When the thickness of the substrate is equal to or less than the upper limit, the film-like adhesive can be cut more easily during blade dicing and the expanding of the semiconductor device manufacturing sheet. Here, the "thickness of the substrate" means the thickness of the entire substrate, and for example, the thickness of a substrate consisting of multiple layers means the total thickness of all layers that make up the substrate.

[0071] In order to improve adhesion to other layers, such as an adhesive layer, formed on the substrate, the surface of the substrate may be subjected to roughening treatments such as sandblasting, solvent treatment, and embossing; or oxidation treatments such as corona discharge treatment, electron beam irradiation treatment, plasma treatment, ozone / ultraviolet irradiation treatment, flame treatment, chromic acid treatment, and hot air treatment; or the like. The surface of the substrate may be treated with a primer. The substrate may have an antistatic coating layer; a layer that prevents the substrate from adhering to other sheets or to an adsorption table when the die bonding sheets are stacked and stored; or the like.

[0072] In addition to the main constituent materials such as the resin, the substrate may contain various known additives such as fillers, colorants, antistatic agents, antioxidants, organic lubricants, catalysts, and softeners (plasticizers).

[0073] The support sheet consisting of the substrate and the pressure-sensitive adhesive layer preferably has a haze of 10 or more, or a total light transmittance of 70% or less.

[0074] The substrate may contain one or more selected from the group consisting of a filler and a colorant. Examples of fillers and colorants that can be contained in the substrate include those used as raw materials for the pressure-sensitive adhesive composition described below.

[0075] By including a filler in the substrate, the haze of the support sheet can be adjusted to a desired value. By including a colorant in the substrate, the total light transmittance of the support sheet can be adjusted to a desired value.

[0076] The optical properties of the substrate are not particularly limited as long as the effects of the present invention are not impaired. The substrate may be, for example, a material that transmits laser light or energy rays.

[0077] The substrate can be produced by a known method. For example, a substrate containing a resin (having a resin as a constituent material) can be produced by molding the resin or a resin composition containing the resin.

[0078] Adhesive layer The pressure-sensitive adhesive layer is in the form of a sheet or film and contains a pressure-sensitive adhesive. The pressure-sensitive adhesive layer can be formed using a pressure-sensitive adhesive composition containing the pressure-sensitive adhesive. For example, the pressure-sensitive adhesive composition can be applied to a surface on which the pressure-sensitive adhesive layer is to be formed, and then dried as necessary, to form the pressure-sensitive adhesive layer at the desired site.

[0079] In the pressure-sensitive adhesive layer, the proportion of the total content of one or more ingredients described below contained in the pressure-sensitive adhesive layer relative to the total mass of the pressure-sensitive adhesive layer does not exceed 100% by mass. Similarly, in the pressure-sensitive adhesive composition, the proportion of the total content of one or more components contained in the pressure-sensitive adhesive composition, which will be described later, relative to the total mass of the pressure-sensitive adhesive composition does not exceed 100 mass %.

[0080] The support sheet consisting of the substrate and the pressure-sensitive adhesive layer preferably has a haze of 10 or more, or a total light transmittance of 70% or less.

[0081] The pressure-sensitive adhesive composition may be applied by a known method, for example, a method using various coaters such as an air knife coater, a blade coater, a bar coater, a gravure coater, a roll coater, a roll knife coater, a curtain coater, a die coater, a knife coater, a screen coater, a Mayer bar coater, or a kiss coater.

[0082] The drying conditions for the pressure-sensitive adhesive composition are not particularly limited. However, when the pressure-sensitive adhesive composition contains a solvent as described below, it is preferable to heat-dry it. In this case, it is preferable to dry it, for example, at 70 to 130°C for 10 seconds to 5 minutes.

[0083] Examples of the adhesive include adhesive resins such as acrylic resins, urethane resins, rubber-based resins, silicone resins, epoxy-based resins, polyvinyl ethers, polycarbonates, and ester-based resins, with acrylic resins being preferred.

[0084] In this specification, the term "adhesive resin" includes both a resin having adhesive properties and a resin having adhesive properties. For example, the adhesive resin includes not only resins that are adhesive by themselves, but also resins that become adhesive when used in combination with other components such as additives, and resins that become adhesive in the presence of a trigger such as heat or water.

[0085] The pressure-sensitive adhesive layer may be either curable or non-curable, for example, either energy ray-curable or non-energy ray-curable. The physical properties of the curable pressure-sensitive adhesive layer before and after curing can be easily adjusted.

[0086] As used herein, "energy rays" refers to electromagnetic waves or charged particle beams that have an energy quantum. Examples of energy rays include ultraviolet rays, radioactive rays, and electron beams. Ultraviolet rays can be irradiated using, for example, a high-pressure mercury lamp, a fusion lamp, a xenon lamp, a black light, or an LED lamp as an ultraviolet light source. Electron beams can be irradiated using those generated by an electron beam accelerator or the like. In addition, in this specification, "energy ray curable" means a property of being cured by irradiation with energy rays, and "non-energy ray curable" means a property of not being cured even when irradiated with energy rays.

[0087] The adhesive layer may consist of one layer (single layer), or may consist of two or more layers. When it consists of multiple layers, these multiple layers may be the same or different from each other, and the combination of these multiple layers is not particularly limited.

[0088] The thickness of the pressure-sensitive adhesive layer is preferably 1 to 100 μm, more preferably 1 to 60 μm, and particularly preferably 1 to 30 μm. Here, "thickness of the adhesive layer" means the thickness of the entire adhesive layer, and for example, the thickness of an adhesive layer consisting of multiple layers means the total thickness of all layers that make up the adhesive layer.

[0089] The optical properties of the pressure-sensitive adhesive layer are not particularly limited as long as the effects of the present invention are not impaired. For example, the pressure-sensitive adhesive layer may be transparent to energy rays. Next, the pressure-sensitive adhesive composition will be described.

[0090] <<Adhesive composition>> When the adhesive layer is energy ray-curable, examples of adhesive compositions containing an energy ray-curable adhesive, i.e., energy ray-curable adhesive compositions, include adhesive composition (I-1) containing a non-energy ray-curable adhesive resin (I-1a) (hereinafter sometimes abbreviated as "adhesive resin (I-1a)") and an energy ray-curable compound; adhesive composition (I-2) containing an energy ray-curable adhesive resin (I-2a) (hereinafter sometimes abbreviated as "adhesive resin (I-2a)") in which an unsaturated group has been introduced into the side chain of the non-energy ray-curable adhesive resin (I-1a); adhesive composition (I-3) containing the adhesive resin (I-2a) and an energy ray-curable compound; and the like.

[0091] <Adhesive composition (I-1)> As described above, the pressure-sensitive adhesive composition (I-1) contains a non-energy ray-curable pressure-sensitive adhesive resin (I-1a) and an energy ray-curable compound.

[0092] [Adhesive resin (I-1a)] The adhesive resin (I-1a) is preferably an acrylic resin. Examples of the acrylic resin include acrylic polymers having at least a structural unit derived from a (meth)acrylic acid alkyl ester. The acrylic resin may have only one type of structural unit, or two or more types. When two or more types are used, the combination and ratio thereof can be selected arbitrarily.

[0093] The adhesive composition (I-1) may contain only one type of adhesive resin (I-1a), or two or more types. When two or more types are contained, the combination and ratio thereof can be selected arbitrarily.

[0094] In the pressure-sensitive adhesive composition (I-1), the content of the pressure-sensitive adhesive resin (I-1a) relative to the total mass of the pressure-sensitive adhesive composition (I-1) is preferably 5 to 99 mass%, more preferably 10 to 95 mass%, and particularly preferably 15 to 90 mass%.

[0095] [Energy ray curable compounds] The energy ray-curable compound contained in the pressure-sensitive adhesive composition (I-1) includes a monomer or oligomer having an energy ray-polymerizable unsaturated group and capable of being cured by irradiation with energy rays. Among the energy ray-curable compounds, examples of the monomer include polyvalent (meth)acrylates such as trimethylolpropane tri(meth)acrylate, pentaerythritol (meth)acrylate, pentaerythritol tetra(meth)acrylate, dipentaerythritol hexa(meth)acrylate, 1,4-butylene glycol di(meth)acrylate, and 1,6-hexanediol (meth)acrylate; urethane (meth)acrylate; polyester (meth)acrylate; polyether (meth)acrylate; and epoxy (meth)acrylate. Among the energy ray-curable compounds, examples of oligomers include oligomers obtained by polymerizing the above-exemplified monomers. The energy ray curable compound is preferably a urethane (meth)acrylate or a urethane (meth)acrylate oligomer, since it has a relatively large molecular weight and is less likely to reduce the storage modulus of the pressure-sensitive adhesive layer.

[0096] The pressure-sensitive adhesive composition (I-1) may contain only one type of energy ray-curable compound, or two or more types. When two or more types are contained, the combination and ratio thereof can be selected arbitrarily.

[0097] In the pressure-sensitive adhesive composition (I-1), the content of the energy ray-curable compound relative to the total mass of the pressure-sensitive adhesive composition (I-1) is preferably 1 to 95 mass%, more preferably 5 to 90 mass%, and particularly preferably 10 to 85 mass%.

[0098] The pressure-sensitive adhesive composition (I-1) preferably contains one or more selected from the group consisting of fillers and colorants. By including a filler in the pressure-sensitive adhesive composition (I-1), the haze of the support sheet can be adjusted to a desired value. By including a colorant in the pressure-sensitive adhesive composition (I-1), the total light transmittance of the support sheet can be adjusted to a desired value.

[0099] [Filling material] When a filler is used, examples of the filler include known fillers such as organic fillers, inorganic fillers, etc. It is preferable to use an organic filler as the filler.

[0100] The organic filler is not particularly limited, and known organic fillers can be used, such as rubber particles (e.g., styrene type particles, butadiene type particles, acrylic type particles), silicone resin particles, silicone rubber particles, and other silicone composite particles. Among these, the organic filler is preferably silicone composite particles, and more preferably silicone resin particles.

[0101] The inorganic filler is not particularly limited, and known inorganic fillers can be used. Examples of inorganic fillers include powders of silica, alumina, talc, calcium carbonate, titanium white, red iron oxide, silicon carbide, boron nitride, etc.; beads obtained by spheroidizing these inorganic fillers; surface-modified products of these inorganic fillers; single-crystal fibers of these inorganic fillers; and glass fibers. Among these, the inorganic filler is preferably silica or alumina, and more preferably silica.

[0102] The pressure-sensitive adhesive composition (I-1) may contain one type of filler or two or more types of fillers, and when two or more types are contained, the combination and ratio thereof can be selected arbitrarily.

[0103] When a filler is used, the content of the filler in the pressure-sensitive adhesive composition (I-1) is preferably 0.01 to 50 parts by mass, more preferably 0.1 to 20 parts by mass, and particularly preferably 0.3 to 15 parts by mass, per 100 parts by mass of the pressure-sensitive adhesive resin (I-1a).

[0104] [Coloring agent] Examples of colorants include known colorants such as inorganic pigments, organic pigments, organic dyes, etc. It is preferable to use inorganic pigments as the colorant.

[0105] Examples of the organic pigments and organic dyes include aminium-based dyes, cyanine-based dyes, merocyanine-based dyes, croconium-based dyes, squarium-based dyes, azulenium-based dyes, polymethine-based dyes, naphthoquinone-based dyes, pyrylium-based dyes, phthalocyanine-based dyes, naphthalocyanine-based dyes, naphtholactam-based dyes, azo-based dyes, condensed azo-based dyes, indigo-based dyes, perinone-based dyes, perylene-based dyes, dioxazine-based dyes, quinacridone-based dyes, isoindolinone-based dyes, quinophthalone-based dyes, pyrrole-based dyes, thioindigo-based dyes, metal complex-based dyes (metal complex dyes), dithiol metal complex-based dyes, indolephenol-based dyes, triallylmethane-based dyes, anthraquinone-based dyes, dioxazine-based dyes, naphthol-based dyes, azomethine-based dyes, benzimidazolone-based dyes, pyranthrone-based dyes, and threne-based dyes.

[0106] Examples of the inorganic pigment include carbon black, cobalt-based dyes, iron-based dyes, chromium-based dyes, titanium-based dyes, vanadium-based dyes, zirconium-based dyes, molybdenum-based dyes, ruthenium-based dyes, platinum-based dyes, ITO (indium tin oxide)-based dyes, ATO (antimony tin oxide)-based dyes, etc. Among these, carbon black is preferred.

[0107] The pressure-sensitive adhesive composition may contain only one type of colorant, or two or more types. When two or more types are contained, the combination and ratio thereof can be selected arbitrarily.

[0108] When a colorant is used, the content of the colorant in the adhesive composition (I-1) is preferably 0.01 to 50 parts by mass, more preferably 0.1 to 20 parts by mass, and particularly preferably 0.3 to 15 parts by mass, per 100 parts by mass of the adhesive resin (I-1a).

[0109] [Crosslinking agent] When the adhesive resin (I-1a) is an acrylic polymer having, in addition to the structural unit derived from a (meth)acrylic acid alkyl ester, a structural unit derived from a functional group-containing monomer, the adhesive composition (I-1) preferably further contains a crosslinking agent.

[0110] The crosslinking agent reacts with the functional group to crosslink the adhesive resins (I-1a) together, for example. Examples of crosslinking agents include isocyanate-based crosslinking agents (crosslinking agents having an isocyanate group) such as tolylene diisocyanate, hexamethylene diisocyanate, xylylene diisocyanate, and adducts of these diisocyanates; epoxy-based crosslinking agents (crosslinking agents having a glycidyl group) such as ethylene glycol glycidyl ether; aziridine-based crosslinking agents (crosslinking agents having an aziridinyl group) such as hexa[1-(2-methyl)-aziridinyl]triphosphatriazine; metal chelate-based crosslinking agents (crosslinking agents having a metal chelate structure) such as aluminum chelate; and isocyanurate-based crosslinking agents (crosslinking agents having an isocyanuric acid skeleton). The crosslinking agent is preferably an isocyanate-based crosslinking agent, from the viewpoint of improving the cohesive strength of the pressure-sensitive adhesive and thereby improving the adhesive strength of the pressure-sensitive adhesive layer, and from the viewpoint of easy availability.

[0111] The pressure-sensitive adhesive composition (I-1) may contain only one type of crosslinking agent, or two or more types. When two or more types are contained, the combination and ratio thereof can be selected arbitrarily.

[0112] When a crosslinking agent is used, the content of the crosslinking agent in the pressure-sensitive adhesive composition (I-1) is preferably 0.01 to 50 parts by mass, more preferably 0.1 to 20 parts by mass, and particularly preferably 0.3 to 15 parts by mass, per 100 parts by mass of the pressure-sensitive adhesive resin (I-1a).

[0113] [Photopolymerization initiator] The pressure-sensitive adhesive composition (I-1) may further contain a photopolymerization initiator. The pressure-sensitive adhesive composition (I-1) containing a photopolymerization initiator undergoes a sufficient curing reaction even when irradiated with relatively low-energy energy rays such as ultraviolet rays.

[0114] Examples of the photopolymerization initiator include benzoin compounds such as benzoin, benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether, benzoin isobutyl ether, benzoin benzoic acid, benzoin methyl benzoate, and benzoin dimethyl ketal; acetophenone compounds such as acetophenone, 2-hydroxy-2-methyl-1-phenyl-propan-1-one, and 2,2-dimethoxy-1,2-diphenylethan-1-one; acyl phosphine compounds such as bis(2,4,6-trimethylbenzoyl)phenylphosphine oxide and 2,4,6-trimethylbenzoyldiphenylphosphine oxide; Examples of suitable amines include phosphine oxide compounds; sulfide compounds such as benzyl phenyl sulfide and tetramethylthiuram monosulfide; α-ketol compounds such as 1-hydroxycyclohexyl phenyl ketone; azo compounds such as azobisisobutyronitrile; titanocene compounds such as titanocene; thioxanthone compounds such as thioxanthone; peroxide compounds; diketone compounds such as diacetyl; benzyl; dibenzyl; benzophenone; 2,4-diethylthioxanthone; 1,2-diphenylmethane; 2-hydroxy-2-methyl-1-[4-(1-methylvinyl)phenyl]propanone; and 2-chloroanthraquinone. Furthermore, as the photopolymerization initiator, for example, quinone compounds such as 1-chloroanthraquinone; photosensitizers such as amines, and the like can also be used.

[0115] The photopolymerization initiator contained in the pressure-sensitive adhesive composition (I-1) may be one type only, or two or more types. When two or more types are contained, the combination and ratio thereof can be selected arbitrarily.

[0116] When a photopolymerization initiator is used, the content of the photopolymerization initiator in the pressure-sensitive adhesive composition (I-1) is preferably 0.01 to 20 parts by mass, more preferably 0.03 to 10 parts by mass, and particularly preferably 0.05 to 5 parts by mass, relative to 100 parts by mass of the energy ray-curable compound.

[0117] [Other additives] The pressure-sensitive adhesive composition (I-1) may contain other additives that do not fall into any of the above-mentioned components, as long as the effects of the present invention are not impaired. Examples of the other additives include known additives such as antistatic agents, antioxidants, softeners (plasticizers), fillers, rust inhibitors, colorants (pigments, dyes), sensitizers, tackifiers, reaction retarders, and crosslinking accelerators (catalysts).

[0118] The reaction retarder is a component for suppressing the progression of an unintended crosslinking reaction in the pressure-sensitive adhesive composition (I-1) during storage due to the action of a catalyst mixed in the pressure-sensitive adhesive composition (I-1). Examples of the reaction retarder include those that form a chelate complex by chelating with the catalyst, and more specifically, those having two or more carbonyl groups (-C(=O)-) in one molecule.

[0119] The other additives contained in the pressure-sensitive adhesive composition (I-1) may be one kind or two or more kinds, and when there are two or more kinds, the combination and ratio thereof can be selected arbitrarily.

[0120] The content of other additives in the pressure-sensitive adhesive composition (I-1) is not particularly limited and may be selected appropriately depending on the type of additive.

[0121] [solvent] The pressure-sensitive adhesive composition (I-1) may contain a solvent, which improves the suitability for application to a surface to be coated.

[0122] The solvent is preferably an organic solvent.

[0123] <Adhesive composition (I-2)> As described above, the adhesive composition (I-2) contains an energy ray-curable adhesive resin (I-2a) in which an unsaturated group has been introduced into the side chain of a non-energy ray-curable adhesive resin (I-1a).

[0124] [Adhesive resin (I-2a)] The adhesive resin (I-2a) can be obtained, for example, by reacting a functional group in the adhesive resin (I-1a) with an unsaturated group-containing compound having an energy ray-polymerizable unsaturated group.

[0125] The unsaturated group-containing compound is a compound that, in addition to the energy ray-polymerizable unsaturated group, further has a group that can bond to the adhesive resin (I-1a) by reacting with a functional group in the adhesive resin (I-1a). Examples of the energy ray-polymerizable unsaturated group include a (meth)acryloyl group, a vinyl group (ethenyl group), and an allyl group (2-propenyl group), and the (meth)acryloyl group is preferred. Examples of groups capable of bonding to functional groups in the adhesive resin (I-1a) include isocyanate groups and glycidyl groups capable of bonding to hydroxyl groups or amino groups, and hydroxyl groups and amino groups capable of bonding to carboxyl groups or epoxy groups.

[0126] Examples of the unsaturated group-containing compound include (meth)acryloyloxyethyl isocyanate, (meth)acryloyl isocyanate, and glycidyl (meth)acrylate.

[0127] The adhesive resin (I-2a) contained in the adhesive composition (I-2) may be one type or two or more types, and when there are two or more types, the combination and ratio thereof can be selected arbitrarily.

[0128] In the pressure-sensitive adhesive composition (I-2), the content of the pressure-sensitive adhesive resin (I-2a) relative to the total mass of the pressure-sensitive adhesive composition (I-2) is preferably 5 to 99 mass%, more preferably 10 to 95 mass%, and particularly preferably 10 to 90 mass%.

[0129] The pressure-sensitive adhesive composition (I-2) preferably contains one or more selected from the group consisting of fillers and colorants. By including a filler in the pressure-sensitive adhesive composition (I-2), the haze of the support sheet can be adjusted to a desired value. By including a colorant in the pressure-sensitive adhesive composition (I-2), the total light transmittance of the support sheet can be adjusted to a desired value.

[0130] [Filling material] The pressure-sensitive adhesive composition (I-2) may further contain a filler.

[0131] Examples of the filler that can be contained in the pressure-sensitive adhesive composition (I-2) include the same fillers as those in the pressure-sensitive adhesive composition (I-1). The pressure-sensitive adhesive composition may contain only one type of filler, or two or more types, and when two or more types are contained, the combination and ratio thereof can be selected arbitrarily.

[0132] When a filler is used, the content of the filler in the pressure-sensitive adhesive composition (I-2) is preferably 0.01 to 50 parts by mass, more preferably 0.1 to 20 parts by mass, and particularly preferably 0.3 to 15 parts by mass, per 100 parts by mass of the pressure-sensitive adhesive resin (I-2a).

[0133] [Coloring agent] The pressure-sensitive adhesive composition (I-2) may further contain a colorant.

[0134] The colorant that can be contained in the pressure-sensitive adhesive composition (I-2) may be the same as the colorant in the pressure-sensitive adhesive composition (I-1). The pressure-sensitive adhesive composition may contain only one type of colorant, or two or more types. When two or more types are contained, the combination and ratio thereof can be selected arbitrarily.

[0135] When a colorant is used, the content of the colorant in the adhesive composition (I-2) is preferably 0.01 to 50 parts by mass, more preferably 0.1 to 20 parts by mass, and particularly preferably 0.3 to 15 parts by mass, per 100 parts by mass of the adhesive resin (I-2a).

[0136] [Crosslinking agent] When the adhesive resin (I-2a) is, for example, an acrylic polymer having structural units derived from functional group-containing monomers similar to those in the adhesive resin (I-1a), the adhesive composition (I-2) may further contain a crosslinking agent.

[0137] Examples of the crosslinking agent in the pressure-sensitive adhesive composition (I-2) include the same crosslinking agents as those in the pressure-sensitive adhesive composition (I-1). The pressure-sensitive adhesive composition (I-2) may contain only one type of crosslinking agent, or two or more types. When two or more types are contained, the combination and ratio thereof can be selected arbitrarily.

[0138] When a crosslinking agent is used, the content of the crosslinking agent in the pressure-sensitive adhesive composition (I-2) is preferably 0.01 to 50 parts by mass, more preferably 0.1 to 20 parts by mass, and particularly preferably 0.3 to 15 parts by mass, per 100 parts by mass of the pressure-sensitive adhesive resin (I-2a).

[0139] [Photopolymerization initiator] The pressure-sensitive adhesive composition (I-2) may further contain a photopolymerization initiator. The pressure-sensitive adhesive composition (I-2) containing a photopolymerization initiator undergoes a sufficient curing reaction even when irradiated with relatively low-energy energy rays such as ultraviolet rays.

[0140] Examples of the photopolymerization initiator in the pressure-sensitive adhesive composition (I-2) include the same photopolymerization initiators as those in the pressure-sensitive adhesive composition (I-1). The photopolymerization initiator contained in the pressure-sensitive adhesive composition (I-2) may be one kind or two or more kinds, and when two or more kinds are contained, the combination and ratio thereof can be selected arbitrarily.

[0141] When a photopolymerization initiator is used, the content of the photopolymerization initiator in the pressure-sensitive adhesive composition (I-2) is preferably 0.01 to 20 parts by mass, more preferably 0.03 to 10 parts by mass, and particularly preferably 0.05 to 5 parts by mass, per 100 parts by mass of the pressure-sensitive adhesive resin (I-2a).

[0142] [Other additives, solvents] The pressure-sensitive adhesive composition (I-2) may contain other additives that do not fall into any of the above-mentioned components, as long as the effects of the present invention are not impaired. The pressure-sensitive adhesive composition (I-2) may contain a solvent for the same purpose as in the case of the pressure-sensitive adhesive composition (I-1). The other additives and solvents in the pressure-sensitive adhesive composition (I-2) may be the same as those in the pressure-sensitive adhesive composition (I-1). The other additives and solvents contained in the pressure-sensitive adhesive composition (I-2) may each be one kind or two or more kinds, and when two or more kinds are contained, the combination and ratio thereof can be selected arbitrarily. The contents of other additives and solvents in the pressure-sensitive adhesive composition (I-2) are not particularly limited and may be selected appropriately depending on their types.

[0143] <Adhesive composition (I-3)> As described above, the pressure-sensitive adhesive composition (I-3) contains the pressure-sensitive adhesive resin (I-2a) and an energy ray-curable compound.

[0144] In the pressure-sensitive adhesive composition (I-3), the content of the pressure-sensitive adhesive resin (I-2a) relative to the total mass of the pressure-sensitive adhesive composition (I-3) is preferably 5 to 99 mass%, more preferably 10 to 95 mass%, and particularly preferably 15 to 90 mass%.

[0145] [Energy ray curable compounds] The energy ray-curable compound contained in the pressure-sensitive adhesive composition (I-3) includes a monomer or oligomer having an energy ray-polymerizable unsaturated group and curable by irradiation with energy rays, and includes the same as the energy ray-curable compound contained in the pressure-sensitive adhesive composition (I-1). The pressure-sensitive adhesive composition (I-3) may contain only one type of energy ray-curable compound, or two or more types. When two or more types are contained, the combination and ratio thereof can be selected arbitrarily.

[0146] The pressure-sensitive adhesive composition (I-3) preferably contains one or more selected from the group consisting of fillers and colorants. By including a filler in the pressure-sensitive adhesive composition (I-3), the haze of the support sheet can be adjusted to a desired value. By including a colorant in the pressure-sensitive adhesive composition (I-3), the total light transmittance of the support sheet can be adjusted to a desired value.

[0147] [Filling material] The pressure-sensitive adhesive composition (I-3) may further contain a filler.

[0148] Examples of fillers that can be contained in the pressure-sensitive adhesive composition (I-3) include the same fillers as those in the pressure-sensitive adhesive composition (I-1). The pressure-sensitive adhesive composition may contain only one type of filler, or two or more types, and when two or more types are contained, the combination and ratio thereof can be selected arbitrarily.

[0149] When a filler is used, the content of the filler in the adhesive composition (I-3) is preferably 0.01 to 50 parts by mass, more preferably 0.1 to 20 parts by mass, and particularly preferably 0.3 to 15 parts by mass, per 100 parts by mass of the adhesive resin (I-2a).

[0150] [Coloring agent] The pressure-sensitive adhesive composition (I-3) may further contain a colorant.

[0151] The colorant that can be contained in the pressure-sensitive adhesive composition (I-3) may be the same as the colorant in the pressure-sensitive adhesive composition (I-1). The pressure-sensitive adhesive composition may contain only one type of colorant, or two or more types. When two or more types are contained, the combination and ratio thereof can be selected arbitrarily.

[0152] When a colorant is used, the content of the colorant in the adhesive composition (I-3) is preferably 0.01 to 50 parts by mass, more preferably 0.1 to 20 parts by mass, and particularly preferably 0.3 to 15 parts by mass, per 100 parts by mass of the adhesive resin (I-2a).

[0153] In the pressure-sensitive adhesive composition (I-3), the content of the energy ray-curable compound is preferably 0.01 to 300 parts by mass, more preferably 0.03 to 200 parts by mass, and particularly preferably 0.05 to 100 parts by mass, per 100 parts by mass of the pressure-sensitive adhesive resin (I-2a).

[0154] [Photopolymerization initiator] The pressure-sensitive adhesive composition (I-3) may further contain a photopolymerization initiator. The pressure-sensitive adhesive composition (I-3) containing a photopolymerization initiator undergoes a sufficient curing reaction even when irradiated with relatively low-energy energy rays such as ultraviolet rays.

[0155] Examples of the photopolymerization initiator in the pressure-sensitive adhesive composition (I-3) include the same ones as the photopolymerization initiator in the pressure-sensitive adhesive composition (I-1). The photopolymerization initiator contained in the pressure-sensitive adhesive composition (I-3) may be one type only, or two or more types. When two or more types are contained, the combination and ratio thereof can be selected arbitrarily.

[0156] When a photopolymerization initiator is used, the content of the photopolymerization initiator in the pressure-sensitive adhesive composition (I-3) is preferably 0.01 to 20 parts by mass, more preferably 0.03 to 10 parts by mass, and particularly preferably 0.05 to 5 parts by mass, relative to 100 parts by mass of the total content of the pressure-sensitive adhesive resin (I-2a) and the energy ray-curable compound.

[0157] [Other additives, solvents] The pressure-sensitive adhesive composition (I-3) may contain other additives that do not fall into any of the above-mentioned components, as long as the effects of the present invention are not impaired. The pressure-sensitive adhesive composition (I-3) may contain a solvent for the same purpose as in the case of the pressure-sensitive adhesive composition (I-1). The other additives and solvents in the pressure-sensitive adhesive composition (I-3) may be the same as those in the pressure-sensitive adhesive composition (I-1). The other additives and solvents contained in the pressure-sensitive adhesive composition (I-3) may each be one kind or two or more kinds, and when two or more kinds are contained, the combination and ratio thereof can be selected arbitrarily. The contents of other additives and solvents in the pressure-sensitive adhesive composition (I-3) are not particularly limited and may be selected appropriately depending on their types.

[0158] <Pressure-sensitive adhesive compositions other than pressure-sensitive adhesive compositions (I-1) to (I-3)> So far, the explanation has been given mainly on the pressure-sensitive adhesive composition (I-1), the pressure-sensitive adhesive composition (I-2), and the pressure-sensitive adhesive composition (I-3). However, the components described as contained in these compositions can also be used in general pressure-sensitive adhesive compositions other than these three types of pressure-sensitive adhesive compositions (referred to in this specification as "pressure-sensitive adhesive compositions other than pressure-sensitive adhesive compositions (I-1) to (I-3)").

[0159] Examples of pressure-sensitive adhesive compositions other than the pressure-sensitive adhesive compositions (I-1) to (I-3) include not only energy ray-curable pressure-sensitive adhesive compositions but also non-energy ray-curable pressure-sensitive adhesive compositions. Examples of the non-energy ray-curable pressure-sensitive adhesive composition include a pressure-sensitive adhesive composition (I-4) containing a non-energy ray-curable pressure-sensitive adhesive resin (I-1a) such as an acrylic resin, a urethane resin, a rubber-based resin, a silicone resin, an epoxy-based resin, a polyvinyl ether, a polycarbonate, or an ester-based resin, and those containing an acrylic resin are preferred.

[0160] It is preferable that the pressure-sensitive adhesive compositions other than the pressure-sensitive adhesive compositions (I-1) to (I-3) contain one or more crosslinking agents, and the content thereof can be the same as in the case of the above-mentioned pressure-sensitive adhesive composition (I-1) and the like.

[0161] <Adhesive composition (I-4)> A preferred example of the pressure-sensitive adhesive composition (I-4) is one containing the pressure-sensitive adhesive resin (I-1a) and a crosslinking agent.

[0162] [Adhesive resin (I-1a)] The adhesive resin (I-1a) in the adhesive composition (I-4) may be the same as the adhesive resin (I-1a) in the adhesive composition (I-1). The adhesive composition (I-4) may contain only one type of adhesive resin (I-1a), or two or more types. When two or more types are contained, the combination and ratio thereof can be selected arbitrarily.

[0163] In the pressure-sensitive adhesive composition (I-4), the content of the pressure-sensitive adhesive resin (I-1a) relative to the total mass of the pressure-sensitive adhesive composition (I-4) is preferably 5 to 99 mass%, more preferably 10 to 95 mass%, and particularly preferably 15 to 90 mass%.

[0164] The pressure-sensitive adhesive composition (I-4) preferably contains one or more selected from the group consisting of fillers and colorants. By including a filler in the pressure-sensitive adhesive composition (I-4), the haze of the support sheet can be adjusted to a desired value. By including a colorant in the pressure-sensitive adhesive composition (I-4), the total light transmittance of the support sheet can be adjusted to a desired value.

[0165] [Filling material] The pressure-sensitive adhesive composition (I-4) may further contain a filler.

[0166] Examples of fillers that can be contained in the pressure-sensitive adhesive composition (I-4) include the same fillers as those in the pressure-sensitive adhesive composition (I-1). The pressure-sensitive adhesive composition may contain only one type of filler, or two or more types, and when two or more types are contained, the combination and ratio thereof can be selected arbitrarily.

[0167] When a filler is used, the content of the filler in the pressure-sensitive adhesive composition (I-4) is preferably 0.01 to 50 parts by mass, more preferably 0.1 to 20 parts by mass, and particularly preferably 0.3 to 15 parts by mass, per 100 parts by mass of the pressure-sensitive adhesive resin (I-1a).

[0168] [Coloring agent] The pressure-sensitive adhesive composition (I-4) may further contain a colorant.

[0169] The colorant that can be contained in the pressure-sensitive adhesive composition (I-4) may be the same as the colorant in the pressure-sensitive adhesive composition (I-1). The pressure-sensitive adhesive composition may contain only one type of colorant, or two or more types. When two or more types are contained, the combination and ratio thereof can be selected arbitrarily.

[0170] When a colorant is used, the content of the colorant in the adhesive composition (I-4) is preferably 0.01 to 50 parts by mass, more preferably 0.1 to 20 parts by mass, and particularly preferably 0.3 to 15 parts by mass, per 100 parts by mass of the adhesive resin (I-1a).

[0171] [Crosslinking agent] When the adhesive resin (I-1a) is an acrylic polymer having, in addition to the structural unit derived from a (meth)acrylic acid alkyl ester, a structural unit derived from a functional group-containing monomer, the adhesive composition (I-4) preferably further contains a crosslinking agent.

[0172] Examples of the crosslinking agent in the pressure-sensitive adhesive composition (I-4) include the same crosslinking agents as those in the pressure-sensitive adhesive composition (I-1). The crosslinking agent contained in the pressure-sensitive adhesive composition (I-4) may be one type only, or two or more types. When two or more types are contained, the combination and ratio thereof can be selected arbitrarily.

[0173] In the pressure-sensitive adhesive composition (I-4), the content of the crosslinking agent is preferably 0.01 to 50 parts by mass, more preferably 0.1 to 25 parts by mass, and particularly preferably 0.1 to 10 parts by mass, per 100 parts by mass of the pressure-sensitive adhesive resin (I-1a).

[0174] [Other additives, solvents] The pressure-sensitive adhesive composition (I-4) may contain other additives that do not fall under any of the above-mentioned components, as long as the effects of the present invention are not impaired. The pressure-sensitive adhesive composition (I-4) may contain a solvent for the same purpose as in the case of the pressure-sensitive adhesive composition (I-1). The other additives and solvents in the pressure-sensitive adhesive composition (I-4) may be the same as those in the pressure-sensitive adhesive composition (I-1). The other additives and solvents contained in the pressure-sensitive adhesive composition (I-4) may each be one kind or two or more kinds, and when two or more kinds are contained, the combination and ratio thereof can be selected arbitrarily. The contents of other additives and solvents in the pressure-sensitive adhesive composition (I-4) are not particularly limited and may be selected appropriately depending on their types.

[0175] <<Method of manufacturing pressure-sensitive adhesive composition>> The pressure-sensitive adhesive compositions (I-1) to (I-3) and pressure-sensitive adhesive compositions other than the pressure-sensitive adhesive compositions (I-1) to (I-3), such as pressure-sensitive adhesive composition (I-4), can be obtained by blending the pressure-sensitive adhesive and, if necessary, components other than the pressure-sensitive adhesive, for constituting the pressure-sensitive adhesive composition. The order of addition of the components when blending is not particularly limited, and two or more components may be added simultaneously. When a solvent is used, the solvent may be mixed with any of the ingredients other than the solvent to pre-dilute the ingredients, or the solvent may be mixed with any of the ingredients other than the solvent without pre-diluting these ingredients. The method for mixing the components during blending is not particularly limited, and may be appropriately selected from known methods such as a method of mixing by rotating a stirrer or stirring blades, a method of mixing using a mixer, or a method of mixing by adding ultrasound. The temperature and time for adding and mixing each component are not particularly limited as long as the components do not deteriorate, and may be adjusted appropriately. A temperature of 15 to 30°C is preferred.

[0176] ○Intermediate layer, intermediate layer forming composition The intermediate layer is in the form of a sheet or film and contains the non-silicon-based resin as a main component. The intermediate layer may contain only a non-silicon resin (consisting of a non-silicon resin), or may contain a non-silicon resin and other components.

[0177] The intermediate layer can be formed, for example, using a composition for forming an intermediate layer containing the non-silicon-based resin. For example, the intermediate layer can be formed in the desired location by applying the composition for forming an intermediate layer to the surface on which the intermediate layer is to be formed and drying it as necessary.

[0178] In the intermediate layer, the ratio of the total content of one or more components contained in the intermediate layer, which will be described later, to the total mass of the intermediate layer does not exceed 100 mass %. Similarly, in the composition for forming an intermediate layer, the ratio of the total content of one or more components contained in the composition for forming an intermediate layer, which will be described later, to the total mass of the composition for forming an intermediate layer does not exceed 100 mass %.

[0179] The intermediate layer-forming composition can be applied by the same method as in the case of applying the pressure-sensitive adhesive composition described above.

[0180] The drying conditions for the composition for forming an intermediate layer are not particularly limited. When the composition for forming an intermediate layer contains a solvent described below, it is preferable to heat-dry it, and in this case, it is preferable to dry it under conditions of, for example, 60 to 130°C for 1 to 6 minutes.

[0181] The weight average molecular weight of the non-silicon based resin is 100,000 or less. In order to further improve the suitability of the semiconductor device manufacturing sheet for dividing the above-mentioned semiconductor wafers, the weight average molecular weight of the non-silicon-based resin may be, for example, any one of 80,000 or less, 60,000 or less, and 40,000 or less.

[0182] There is no particular lower limit to the weight average molecular weight of the non-silicon-based resin. For example, non-silicon-based resins having a weight average molecular weight of 5000 or more are more readily available.

[0183] The weight-average molecular weight of the non-silicon-based resin can be adjusted appropriately within a range set by any combination of the above-mentioned lower limit and any of the above-mentioned upper limits. For example, in one embodiment, the weight-average molecular weight may be any of 5,000 to 100,000, 5,000 to 80,000, 5,000 to 60,000, and 5,000 to 40,000.

[0184] In this embodiment, "the intermediate layer contains, as a main component, a non-silicon-based resin having a weight-average molecular weight of 100,000 or less" means "the intermediate layer contains the non-silicon-based resin in an amount sufficient to fully exhibit the effects of containing the non-silicon-based resin having a weight-average molecular weight of 100,000 or less." From this perspective, the proportion of the non-silicon-based resin in the intermediate layer relative to the total mass of the intermediate layer (in other words, the proportion of the non-silicon-based resin in the composition for forming the intermediate layer relative to the total content of all components other than the solvent) is preferably 80% by mass or more, more preferably 90% by mass or more, and may be, for example, any one of 95% by mass or more, 97% by mass or more, and 99% by mass or more. On the other hand, the proportion is 100% by mass or less.

[0185] The non-silicon-based resin having a weight average molecular weight of 100,000 or less is not particularly limited as long as it is a resin component that does not contain silicon atoms as constituent atoms and has a weight average molecular weight of 100,000 or less. The non-silicon resin may be, for example, either a polar resin having a polar group or a non-polar resin having no polar group. For example, the non-silicon-based resin is preferably a polar resin, since it has high solubility in the composition for forming an intermediate layer and the composition for forming an intermediate layer has higher coatability.

[0186] In this specification, unless otherwise specified, the term "non-silicon-based resin" refers to the above-mentioned non-silicon-based resin having a weight average molecular weight of 100,000 or less.

[0187] The non-silicon resin may be, for example, a homopolymer that is a polymer of one type of monomer (in other words, having only one type of structural unit), or a copolymer that is a polymer of two or more types of monomers (in other words, having two or more types of structural units).

[0188] Examples of the polar group include a carbonyloxy group (-C(=O)-O-), an oxycarbonyl group (-OC(=O)-), and the like.

[0189] The polar resin may have only a structural unit having a polar group, or may have both a structural unit having a polar group and a structural unit not having a polar group.

[0190] Examples of the structural unit having a polar group include a structural unit derived from vinyl acetate. Examples of the structural unit not having a polar group include structural units derived from ethylene.

[0191] In the polar resin, the ratio of the mass of the structural units having a polar group to the total mass of all structural units is preferably 5 to 70 mass%, and may be, for example, 7.5 to 55 mass% or 10 to 40 mass%. In other words, in the polar resin, the ratio of the mass of the structural units not having a polar group to the total mass of all structural units is preferably 30 to 95 mass%, and may be, for example, 45 to 92.5 mass% or 60 to 90 mass%. When the mass ratio of the structural units having a polar group is equal to or greater than the lower limit, the polar resin more significantly exhibits the characteristic of having a polar group. When the mass ratio of the structural units having a polar group is equal to or less than the upper limit, the polar resin more appropriately exhibits the characteristic of not having a polar group.

[0192] Examples of the polar resin include ethylene vinyl acetate copolymer. Among these, preferred polar resins include, for example, ethylene-vinyl acetate copolymers in which the ratio of the mass of structural units derived from vinyl acetate to the total mass of all structural units (sometimes referred to herein as the "content of structural units derived from vinyl acetate") is 10 to 40 mass%. In other words, preferred polar resins include, for example, ethylene-vinyl acetate copolymers in which the ratio of the mass of structural units derived from ethylene to the total mass of all structural units is 60 to 90 mass%.

[0193] Examples of the non-polar resin include polyethylene (PE) such as low-density polyethylene (LDPE), linear low-density polyethylene (LLDPE), metallocene-catalyzed linear low-density polyethylene (metallocene LLDPE), medium-density polyethylene (MDPE), and high-density polyethylene (HDPE); and polypropylene (PP).

[0194] The non-silicon resin contained in the intermediate layer-forming composition and the intermediate layer may be one type or two or more types, and when there are two or more types, the combination and ratio thereof can be selected arbitrarily. For example, the composition for forming an intermediate layer and the intermediate layer may contain one or more non-silicon-based resins that are polar resins, and may not contain any non-silicon-based resins that are non-polar resins, or may contain one or more non-silicon-based resins that are non-polar resins, and may not contain any non-silicon-based resins that are polar resins, or may contain one or more non-silicon-based resins that are both polar resins and non-silicon-based resins that are non-polar resins. The intermediate layer-forming composition and the intermediate layer preferably contain at least a non-silicon-based resin that is a polar resin.

[0195] In the composition for forming an intermediate layer and the intermediate layer, the proportion of the non-silicon-based resin, which is a polar resin, relative to the total content of the non-silicon-based resins is preferably 80% by mass or more, more preferably 90% by mass or more, and may be, for example, 95% by mass or more, 97% by mass or more, or 99% by mass or more. When the proportion is equal to or greater than the lower limit, the effect of using the polar resin is more pronounced. On the other hand, the proportion is 100% by mass or less.

[0196] That is, in the composition for forming an intermediate layer and the intermediate layer, the content of the non-silicon-based resin, which is a non-polar resin, relative to the total content of the non-silicon-based resin is preferably 20% by mass or less, more preferably 10% by mass or less, and may be, for example, any of 5% by mass or less, 3% by mass or less, and 1% by mass or less. On the other hand, the proportion is 0% by mass or more.

[0197] In terms of ease of handling, the composition for forming the intermediate layer preferably contains a solvent in addition to the non-silicon-based resin, and may also contain a component (sometimes referred to as an "additive" in this specification) that does not fall into either the non-silicon-based resin or the solvent. The intermediate layer may contain only the non-silicon based resin, or may contain both the non-silicon based resin and the additive.

[0198] The additives may be either resin components (sometimes referred to herein as "other resin components") or non-resin components.

[0199] Examples of the other resin component include a non-silicon-based resin having a weight average molecular weight (Mw) of more than 100,000 and a silicon-based resin.

[0200] The non-silicon-based resin having a weight average molecular weight of more than 100,000 is not particularly limited as long as it satisfies these conditions.

[0201] As will be described later, the intermediate layer containing the silicon-based resin makes it easier to pick up the semiconductor chip with the film adhesive attached.

[0202] The silicon-based resin is not particularly limited as long as it is a resin component having silicon atoms as constituent atoms. For example, the weight average molecular weight of the silicon-based resin is not particularly limited.

[0203] Preferred silicon-based resins include, for example, resin components that exhibit a release effect against adhesive components, and siloxane-based resins (resin components having a siloxane bond (-Si-O-Si-), also known as siloxane-based compounds) are more preferred.

[0204] The siloxane-based resin may be, for example, polydialkylsiloxane. The alkyl group in the polydialkylsiloxane preferably has 1 to 20 carbon atoms. In the polydialkylsiloxane, the two alkyl groups bonded to one silicon atom may be the same or different from each other. When the two alkyl groups bonded to one silicon atom are different from each other, the combination of these two alkyl groups is not particularly limited. Examples of the polydialkylsiloxane include polydimethylsiloxane.

[0205] The non-resin component may be, for example, either an organic compound or an inorganic compound, and is not particularly limited.

[0206] The additives contained in the intermediate layer-forming composition and the intermediate layer may be one type only, or two or more types. When there are two or more types, the combination and ratio thereof can be selected arbitrarily. For example, the composition for forming an intermediate layer and the intermediate layer may contain one or more resin components as the additives, and may not contain any non-resin components, or may contain one or more non-resin components, and may not contain any resin components, or may contain one or more resin components and one or more non-resin components.

[0207] When the intermediate layer-forming composition and the intermediate layer contain the additives, the ratio of the content of the non-silicon-based resin in the intermediate layer to the total mass of the intermediate layer (in other words, the ratio of the content of the non-silicon-based resin to the total content of all components other than the solvent in the intermediate layer-forming composition) is preferably 90 to 99.99 mass%, and may be, for example, any of 90 to 97.5 mass%, 90 to 95 mass%, and 90 to 92.5 mass%, or any of 92.5 to 99.99 mass%, 95 to 99.99 mass%, and 97.5 to 99.99 mass%, or may be 92.5 to 97.5 mass%. When the intermediate layer-forming composition and the intermediate layer contain the additives, the ratio of the content of the additives in the intermediate layer to the total mass of the intermediate layer (in other words, the ratio of the content of the additives to the total content of all components other than the solvent in the intermediate layer-forming composition) is preferably 0.01 to 10 mass%, and may be, for example, any of 2.5 to 10 mass%, 5 to 10 mass%, and 7.5 to 10 mass%, or any of 0.01 to 7.5 mass%, 0.01 to 5 mass%, and 0.01 to 2.5 mass%, or may be 2.5 to 7.5 mass%.

[0208] The solvent contained in the composition for forming an intermediate layer is not particularly limited, but preferred examples include hydrocarbons such as toluene and xylene; alcohols such as methanol, ethanol, 2-propanol, isobutyl alcohol (2-methylpropan-1-ol), and 1-butanol; esters such as ethyl acetate; ketones such as acetone and methyl ethyl ketone; ethers such as tetrahydrofuran; and amides (compounds having an amide bond) such as dimethylformamide and N-methylpyrrolidone. The intermediate layer-forming composition may contain only one type of solvent, or two or more types. When two or more types are contained, the combination and ratio thereof can be selected arbitrarily.

[0209] The solvent contained in the composition for forming an intermediate layer is preferably tetrahydrofuran or the like, since this allows the components contained in the composition for forming an intermediate layer to be mixed more uniformly.

[0210] The content of the solvent in the composition for forming an intermediate layer is not particularly limited, and may be selected appropriately depending on, for example, the types of components other than the solvent.

[0211] As will be described later, in terms of making it easier to pick up semiconductor chips with film-like adhesive, a preferred intermediate layer is, for example, one that contains an ethylene-vinyl acetate copolymer, which is the non-silicon-based resin, and a siloxane-based compound, which is the additive, and in which the ratio of the content of the ethylene-vinyl acetate copolymer (the non-silicon-based resin) to the total mass of the intermediate layer is within any of the numerical ranges described above, and the ratio of the content of the siloxane-based compound (the additive) to the total mass of the intermediate layer is within any of the numerical ranges described above. For example, such an intermediate layer may contain an ethylene-vinyl acetate copolymer as the non-silicon resin and a siloxane compound as the additive, in which the content of the ethylene-vinyl acetate copolymer relative to the total mass of the intermediate layer is 90 to 99.99 mass%, and the content of the siloxane compound relative to the total mass of the intermediate layer is 0.01 to 10 mass%, although this is just one example of a preferred intermediate layer.

[0212] A more preferred intermediate layer is, for example, one that contains the non-silicon resin ethylene-vinyl acetate copolymer and the additive siloxane compound, in which the ratio of the mass of structural units derived from vinyl acetate to the total mass of all structural units in the ethylene-vinyl acetate copolymer (in other words, the content of structural units derived from vinyl acetate) is 10 to 40 mass%, the content of the ethylene-vinyl acetate copolymer to the total mass of the intermediate layer is 90 to 99.99 mass%, and the content of the siloxane compound to the total mass of the intermediate layer is 0.01 to 10 mass%. However, this is just one example of a more preferred intermediate layer.

[0213] When the surface of the intermediate layer on the film-like adhesive side of the semiconductor device manufacturing sheet (for example, the first surface 13a of the intermediate layer 13 in FIG. 1) is analyzed by X-ray photoelectron spectroscopy (sometimes referred to herein as "XPS"), the ratio of the silicon concentration to the total concentration of carbon, oxygen, nitrogen, and silicon (sometimes abbreviated herein as "silicon concentration ratio") is preferably 1 to 20% on a molar basis of the element. By using a semiconductor device manufacturing sheet having such an intermediate layer, semiconductor chips with the film-like adhesive attached can be picked up more easily, as described below.

[0214] The silicon concentration ratio is calculated by the following formula: [Measured silicon concentration (atomic %) in XPS analysis] / {[Measured carbon concentration (atomic %) in XPS analysis] + [Measured oxygen concentration (atomic %) in XPS analysis] + [Measured nitrogen concentration (atomic %) in XPS analysis] + [Measured silicon concentration (atomic %) in XPS analysis]} x 100 It can be calculated as follows.

[0215] XPS analysis can be performed on the surface of the intermediate layer on the film adhesive side using an X-ray photoelectron spectrometer (e.g., Quantra SXM manufactured by ULVAC) under conditions of an irradiation angle of 45°, an X-ray beam diameter of 20 μmφ, and an output of 4.5 W.

[0216] In order to make such effects more pronounced, the silicon concentration may be, for example, any one of 4 to 20%, 8 to 20%, and 12 to 20%, or any one of 1 to 16%, 1 to 12%, and 1 to 8%, or any one of 4 to 16% and 8 to 12%, based on the moles of the element.

[0217] When the XPS analysis is performed as described above, there is a possibility that elements other than carbon, oxygen, nitrogen, and silicon may be detected on the surface of the intermediate layer (the surface to be analyzed by XPS). However, even if the other elements are detected, their concentrations are usually very small. Therefore, when calculating the silicon concentration ratio, the measured values ​​of the concentrations of carbon, oxygen, nitrogen, and silicon can be used to calculate the silicon concentration ratio with high accuracy.

[0218] The intermediate layer may consist of one layer (single layer) or two or more layers. When the intermediate layer consists of multiple layers, the multiple layers may be the same or different from each other, and the combination of the multiple layers is not particularly limited.

[0219] As explained above, the maximum width of the intermediate layer is preferably smaller than the maximum width of the pressure-sensitive adhesive layer and the maximum width of the substrate. The maximum width of the intermediate layer can be appropriately selected taking into consideration the size of the semiconductor wafer. For example, the maximum width of the intermediate layer may be 150 to 160 mm, 200 to 210 mm, or 300 to 310 mm. These three numerical ranges correspond to semiconductor wafers with a maximum width in the direction parallel to the attachment surface with the semiconductor device manufacturing sheet of 150 mm, 200 mm, or 300 mm. However, as explained above, if the film adhesive is cut by expanding the semiconductor device manufacturing sheet after dicing, which involves forming a modified layer on the semiconductor wafer, the semiconductor device manufacturing sheet is attached to a group of multiple semiconductor chips (semiconductor chip group) after dicing, as described below.

[0220] In this specification, unless otherwise specified, the "width of the intermediate layer" means, for example, the "width of the intermediate layer in a direction parallel to the first surface of the intermediate layer." For example, in the case of an intermediate layer having a circular planar shape, the maximum value of the width of the intermediate layer is the diameter of the circle having the planar shape. The same applies to semiconductor wafers. That is, the "width of the semiconductor wafer" means the "width of the semiconductor wafer in a direction parallel to the surface of the semiconductor wafer where the semiconductor wafer is attached to the sheet for manufacturing semiconductor device." For example, in the case of a semiconductor wafer having a circular planar shape, the maximum value of the width of the semiconductor wafer is the diameter of the circle having the planar shape.

[0221] The maximum width of the intermediate layer of 150 to 160 mm means that it is equal to or larger than the maximum width of the semiconductor wafer of 150 mm by not exceeding 10 mm. Similarly, the maximum width of the intermediate layer of 200 to 210 mm means that it is equal to or larger than the maximum width of the semiconductor wafer of 200 mm by not exceeding 10 mm. Similarly, the maximum width of the intermediate layer of 300 to 310 mm means that it is equal to or larger than the maximum width of the semiconductor wafer of 300 mm by not exceeding 10 mm. That is, in this embodiment, the difference between the maximum width of the intermediate layer and the maximum width of the semiconductor wafer may be, for example, 0 to 10 mm, regardless of whether the maximum width of the semiconductor wafer is 150 mm, 200 mm, or 300 mm.

[0222] The thickness of the intermediate layer can be appropriately selected depending on the purpose, but is preferably 5 to 150 μm, more preferably 5 to 120 μm, and may be, for example, any of 10 to 90 μm and 10 to 60 μm, or any of 30 to 120 μm and 60 to 120 μm. When the thickness of the intermediate layer is equal to or greater than the lower limit, the structure of the intermediate layer becomes more stable. When the thickness of the intermediate layer is equal to or less than the upper limit, the film-like adhesive can be cut more easily during blade dicing and the expanding of the semiconductor device manufacturing sheet. Here, "thickness of the intermediate layer" means the thickness of the entire intermediate layer; for example, the thickness of an intermediate layer consisting of multiple layers means the total thickness of all layers that make up the intermediate layer.

[0223] When the intermediate layer contains the silicon-based resin, particularly when the compatibility between the silicon-based resin and the non-silicon-based resin that is the main component is low, the silicon-based resin in the intermediate layer in the semiconductor device manufacturing sheet tends to be unevenly distributed on both sides of the intermediate layer (the first side and the opposite side) and their surrounding areas. The stronger this tendency, the easier it is for the film-like adhesive adjacent to (in direct contact with) the intermediate layer to peel from the intermediate layer, making it easier to pick up the semiconductor chip with the film-like adhesive, as described below. For example, when comparing two intermediate layers that differ only in thickness but are identical in other respects, such as composition and the area of ​​both surfaces, the ratio (mass %) of the silicone resin content to the total mass of the intermediate layer is the same. However, the silicone resin content (parts by mass) of the thicker intermediate layer is higher than that of the thinner intermediate layer. Therefore, if the silicone resin is prone to uneven distribution in the intermediate layer as described above, the thicker intermediate layer will have a greater amount of silicone resin unevenly distributed on both surfaces (the first surface and the opposite surface) and their adjacent areas than the thinner intermediate layer. Therefore, even without changing the ratio, it is possible to adjust the pick-up suitability of semiconductor chips with a film-like adhesive by adjusting the thickness of the intermediate layer in the semiconductor device manufacturing sheet. For example, increasing the thickness of the intermediate layer in the semiconductor device manufacturing sheet makes it easier to pick up semiconductor chips with a film-like adhesive.

[0224] ○Film adhesive The film-like adhesive is curable, preferably thermosetting, and more preferably pressure-sensitive. A film-like adhesive that is both thermosetting and pressure-sensitive can be applied to various adherends by gently pressing it against them in an uncured state. Alternatively, the film-like adhesive may be softened by heating so that it can be applied to various adherends. Upon curing, the film-like adhesive ultimately becomes a cured product with high impact resistance, and this cured product can retain sufficient adhesive properties even under harsh conditions of high temperature and high humidity.

[0225] When the semiconductor device manufacturing sheet is viewed from above in a plan view, the area of ​​the film-like adhesive (i.e., the area of ​​the first surface) is preferably set smaller than the area of ​​the base material (i.e., the area of ​​the first surface) and the area of ​​the pressure-sensitive adhesive layer (i.e., the area of ​​the first surface) so as to approximate the area of ​​the semiconductor wafer before division. In such a semiconductor device manufacturing sheet, a region on the first surface of the pressure-sensitive adhesive layer is present that is not in contact with the intermediate layer and the film-like adhesive (i.e., the non-laminated region). This makes it easier to expand the semiconductor device manufacturing sheet, and the force applied to the film-like adhesive during expansion is not dispersed, making it easier to cut the film-like adhesive.

[0226] The film adhesive can be formed using an adhesive composition containing the constituent materials thereof. For example, the adhesive composition can be applied to the surface on which the film adhesive is to be formed, and then dried as necessary to form the film adhesive at the desired location.

[0227] In the film adhesive, the proportion of the total content of one or more components described below in the film adhesive relative to the total mass of the film adhesive does not exceed 100 mass %. Similarly, in the adhesive composition, the proportion of the total content of one or more components contained in the adhesive composition, which will be described later, relative to the total mass of the adhesive composition does not exceed 100 mass %.

[0228] The adhesive composition can be applied in the same manner as in the case of applying the pressure-sensitive adhesive composition described above.

[0229] The drying conditions for the adhesive composition are not particularly limited. When the adhesive composition contains a solvent described below, it is preferable to heat-dry it, and in this case, it is preferable to dry it under conditions of, for example, 70 to 130°C for 10 seconds to 5 minutes.

[0230] The film adhesive may consist of one layer (single layer) or two or more layers. If it consists of multiple layers, these layers may be the same or different from each other, and the combination of these layers is not particularly limited.

[0231] As explained above, the maximum width of the film adhesive is preferably smaller than the maximum width of the pressure-sensitive adhesive layer and the maximum width of the substrate. The maximum width of the film adhesive may be the same as the maximum width of the intermediate layer described above relative to the size of the semiconductor wafer. That is, the maximum width of the film-like adhesive can be appropriately selected taking into consideration the size of the semiconductor wafer. For example, the maximum width of the film-like adhesive may be 150 to 160 mm, 200 to 210 mm, or 300 to 310 mm. These three numerical ranges correspond to semiconductor wafers with a maximum width in the direction parallel to the surface to be attached to the semiconductor device manufacturing sheet of 150 mm, 200 mm, or 300 mm.

[0232] In this specification, unless otherwise specified, the "width of the film adhesive" means, for example, "the width of the film adhesive in a direction parallel to the first surface of the film adhesive." For example, in the case of a film adhesive whose planar shape is circular, the maximum value of the width of the film adhesive described above is the diameter of the circle that is the planar shape. Furthermore, unless otherwise specified, the "width of the film adhesive" does not refer to the width of the film adhesive after cutting during the manufacturing process of semiconductor chips with film adhesive described below, but rather to the "width of the film adhesive before cutting (uncut)."

[0233] The maximum width of the film adhesive of 150 to 160 mm means that it is equal to or larger than the maximum width of a semiconductor wafer of 150 mm by not more than 10 mm. Similarly, the maximum width of the film adhesive of 200 to 210 mm means that it is equal to or larger than the maximum width of the semiconductor wafer of 200 mm by no more than 10 mm. Similarly, the maximum width of the film adhesive of 300 to 310 mm means that it is equal to or larger than the maximum width of the semiconductor wafer of 300 mm by not more than 10 mm. That is, in this embodiment, the difference between the maximum width of the film adhesive and the maximum width of the semiconductor wafer may be, for example, 0 to 10 mm, regardless of whether the maximum width of the semiconductor wafer is 150 mm, 200 mm, or 300 mm.

[0234] In this embodiment, the maximum width of the intermediate layer and the maximum width of the film adhesive may both be within any of the above-mentioned numerical ranges. That is, an example of the sheet for manufacturing a semiconductor device of this embodiment is one in which the maximum width of the intermediate layer and the maximum width of the film-like adhesive are both 150 to 160 mm, 200 to 210 mm, or 300 to 310 mm.

[0235] The thickness of the film adhesive is not particularly limited, but is preferably 1 to 30 μm, more preferably 2 to 20 μm, and particularly preferably 3 to 10 μm. When the thickness of the film adhesive is equal to or greater than the lower limit, higher adhesive strength to the adherend (semiconductor chip) can be obtained. When the thickness of the film adhesive is equal to or less than the upper limit, the film adhesive can be cut more easily during blade dicing and the expanding of the semiconductor device manufacturing sheet. Here, "thickness of the film adhesive" means the thickness of the entire film adhesive; for example, the thickness of a film adhesive consisting of multiple layers means the total thickness of all layers that make up the film adhesive. Next, the adhesive composition will be described.

[0236] <<Adhesive composition>> A preferred adhesive composition includes, for example, one containing a polymer component (a) and a thermosetting component (b). Each component will be described below. The adhesive composition shown below is a preferred example, and the adhesive composition in this embodiment is not limited to the one shown below.

[0237] [Polymer component (a)] The polymer component (a) is a component that can be considered to be formed by the polymerization reaction of a polymerizable compound, and is a polymer compound that imparts film-forming properties, flexibility, etc. to the film adhesive and improves the adhesiveness (in other words, stickiness) to an adhesion target such as a semiconductor chip. The polymer component (a) is thermoplastic and not thermosetting.

[0238] The polymer component (a) contained in the adhesive composition and film-like adhesive may be one type or two or more types, and when there are two or more types, the combination and ratio thereof can be selected arbitrarily.

[0239] Examples of the polymer component (a) include acrylic resins, urethane resins, phenoxy resins, silicone resins, saturated polyester resins, and the like. Among these, the polymer component (a) is preferably an acrylic resin.

[0240] In the adhesive composition, the proportion of the content of polymer component (a) relative to the total content of all components other than the solvent (i.e., the proportion of the content of polymer component (a) in the film adhesive relative to the total mass of the film adhesive) is preferably 20 to 75 mass%, more preferably 30 to 65 mass%.

[0241] [Thermosetting component (b)] The thermosetting component (b) has thermosetting properties and is a component for thermally curing the film-like adhesive. The thermosetting component (b) contained in the adhesive composition and film-like adhesive may be one type or two or more types, and when there are two or more types, the combination and ratio thereof can be selected arbitrarily.

[0242] Examples of the thermosetting component (b) include epoxy-based thermosetting resins, polyimide resins, and unsaturated polyester resins. Among these, the thermosetting component (b) is preferably an epoxy-based thermosetting resin.

[0243] 〇Epoxy thermosetting resin The epoxy thermosetting resin comprises an epoxy resin (b1) and a thermosetting agent (b2). The adhesive composition and film-like adhesive may contain only one type of epoxy thermosetting resin, or two or more types, and when two or more types are contained, the combination and ratio of these can be selected arbitrarily.

[0244] Epoxy resin (b1) Examples of the epoxy resin (b1) include known epoxy resins, such as bifunctional or higher functional epoxy compounds, including polyfunctional epoxy resins, biphenyl compounds, bisphenol A diglycidyl ether and its hydrogenated products, orthocresol novolac epoxy resins, dicyclopentadiene-type epoxy resins, biphenyl-type epoxy resins, bisphenol A-type epoxy resins, bisphenol F-type epoxy resins, and phenylene skeleton-type epoxy resins.

[0245] The epoxy resin (b1) may be an epoxy resin having an unsaturated hydrocarbon group. Epoxy resins having an unsaturated hydrocarbon group have higher compatibility with acrylic resins than epoxy resins without an unsaturated hydrocarbon group. Therefore, the use of an epoxy resin having an unsaturated hydrocarbon group improves the reliability of the package obtained using the film adhesive.

[0246] The epoxy resin (b1) contained in the adhesive composition and film-like adhesive may be one type or two or more types, and when there are two or more types, the combination and ratio thereof can be selected arbitrarily.

[0247] Heat hardener (b2) The thermosetting agent (b2) functions as a curing agent for the epoxy resin (b1). Examples of the thermosetting agent (b2) include compounds having two or more functional groups per molecule that can react with epoxy groups. Examples of the functional groups include phenolic hydroxyl groups, alcoholic hydroxyl groups, amino groups, carboxyl groups, and anhydride groups of acid groups. Phenolic hydroxyl groups, amino groups, and anhydride groups of acid groups are preferred, and phenolic hydroxyl groups or amino groups are more preferred.

[0248] Among the heat curing agents (b2), examples of phenolic curing agents having a phenolic hydroxyl group include polyfunctional phenolic resins, biphenols, novolac-type phenolic resins, dicyclopentadiene-type phenolic resins, and aralkyl-type phenolic resins. Among the heat curing agents (b2), examples of amine-based curing agents having an amino group include dicyandiamide (DICY).

[0249] The heat curing agent (b2) may have an unsaturated hydrocarbon group.

[0250] The adhesive composition and film-like adhesive may contain only one type of thermosetting agent (b2), or two or more types. When two or more types are contained, the combination and ratio thereof can be selected arbitrarily.

[0251] In the adhesive composition and film-like adhesive, the content of the thermosetting agent (b2) is preferably 0.1 to 500 parts by mass, more preferably 1 to 200 parts by mass, per 100 parts by mass of the epoxy resin (b1), and may be, for example, any of 1 to 100 parts by mass, 1 to 50 parts by mass, and 1 to 25 parts by mass. When the content of the thermosetting agent (b2) is equal to or greater than the lower limit, curing of the film-like adhesive proceeds more easily. When the content of the thermosetting agent (b2) is equal to or less than the upper limit, the moisture absorption rate of the film-like adhesive is reduced, and the reliability of packages obtained using the film-like adhesive is further improved.

[0252] In the adhesive composition and film-like adhesive, the content of the thermosetting component (b) (for example, the total content of the epoxy resin (b1) and the thermosetting agent (b2)) is preferably 5 to 100 parts by mass, more preferably 5 to 75 parts by mass, and particularly preferably 5 to 50 parts by mass, per 100 parts by mass of the polymer component (a), and may be, for example, either 5 to 35 parts by mass or 5 to 20 parts by mass. When the content of the thermosetting component (b) is within this range, the peel force between the intermediate layer and the film-like adhesive becomes more stable.

[0253] In addition to the polymer component (a) and the thermosetting component (b), the adhesive composition and the film-like adhesive may further contain other components that do not fall into these categories, as necessary, in order to improve various physical properties of the film-like adhesive. Preferred examples of other components contained in the adhesive composition and film-like adhesive include a curing accelerator (c), a filler (d), a coupling agent (e), a crosslinking agent (f), an energy ray-curable resin (g), a photopolymerization initiator (h), and a general-purpose additive (i).

[0254] [Curing accelerator (c)] The curing accelerator (c) is a component for adjusting the curing rate of the adhesive composition. Preferred examples of the curing accelerator (c) include tertiary amines such as triethylenediamine, benzyldimethylamine, triethanolamine, dimethylaminoethanol, and tris(dimethylaminomethyl)phenol; imidazoles (imidazoles in which one or more hydrogen atoms are substituted with groups other than hydrogen atoms) such as 2-methylimidazole, 2-phenylimidazole, 2-phenyl-4-methylimidazole, 2-phenyl-4,5-dihydroxymethylimidazole, and 2-phenyl-4-methyl-5-hydroxymethylimidazole; organic phosphines (phosphines in which one or more hydrogen atoms are substituted with organic groups) such as tributylphosphine, diphenylphosphine, and triphenylphosphine; and tetraphenylboron salts such as tetraphenylphosphonium tetraphenylborate and triphenylphosphine tetraphenylborate.

[0255] The adhesive composition and film-like adhesive may contain only one type of curing accelerator (c), or two or more types, and when two or more types are contained, the combination and ratio thereof can be selected arbitrarily.

[0256] When a curing accelerator (c) is used, the content of the curing accelerator (c) in the adhesive composition and film-like adhesive is preferably 0.01 to 10 parts by mass, and more preferably 0.1 to 5 parts by mass, per 100 parts by mass of the thermosetting component (b). When the content of the curing accelerator (c) is equal to or greater than the lower limit, the effects of using the curing accelerator (c) are more pronounced. When the content of the curing accelerator (c) is equal to or less than the upper limit, for example, the highly polar curing accelerator (c) is more effectively inhibited from migrating to the adhesive interface with the adherend and segregating in the film-like adhesive under high temperature and high humidity conditions, thereby further improving the reliability of packages obtained using the film-like adhesive.

[0257] [Filler (d)] By including filler (d), the film adhesive's cuttability during expansion is further improved. Furthermore, by including filler (d), the film adhesive's thermal expansion coefficient can be easily adjusted, and optimizing this thermal expansion coefficient for the object to which the film adhesive is attached further improves the reliability of the package obtained using the film adhesive. Furthermore, by including filler (d), the film adhesive can reduce the moisture absorption rate of the film adhesive after curing and improve its heat dissipation properties.

[0258] The filler (d) may be either an organic filler or an inorganic filler, but is preferably an inorganic filler. Preferred inorganic fillers include, for example, powders of silica, alumina, talc, calcium carbonate, titanium white, red iron oxide, silicon carbide, boron nitride, etc.; beads obtained by spheronizing these inorganic fillers; surface-modified products of these inorganic fillers; single-crystal fibers of these inorganic fillers; glass fibers, etc. Among these, the inorganic filler is preferably silica or alumina.

[0259] The adhesive composition and film-like adhesive may contain only one type of filler (d), or two or more types, and when there are two or more types, the combination and ratio thereof can be selected arbitrarily.

[0260] When filler (d) is used, the proportion of the content of filler (d) in the adhesive composition relative to the total content of all components other than the solvent (i.e., the proportion of the content of filler (d) in the film adhesive relative to the total mass of the film adhesive) is preferably 5 to 80 mass%, more preferably 10 to 70 mass%, and particularly preferably 20 to 60 mass%. By keeping the proportion within this range, the effects of using filler (d) can be more pronounced.

[0261] [Coupling agent (e)] By including the coupling agent (e), the film adhesive has improved adhesion and adhesion to the adherend. Furthermore, by including the coupling agent (e), the cured product has improved water resistance without impairing heat resistance. The coupling agent (e) has a functional group capable of reacting with an inorganic or organic compound.

[0262] The coupling agent (e) is preferably a compound having a functional group capable of reacting with the functional group of the polymer component (a), the thermosetting component (b), etc., and is more preferably a silane coupling agent.

[0263] The coupling agent (e) contained in the adhesive composition and film-like adhesive may be one type only, or two or more types, and when two or more types are contained, the combination and ratio thereof can be selected arbitrarily.

[0264] When a coupling agent (e) is used, the content of the coupling agent (e) in the adhesive composition and film-like adhesive is preferably 0.03 to 20 parts by mass, more preferably 0.05 to 10 parts by mass, and particularly preferably 0.1 to 5 parts by mass, per 100 parts by mass of the total content of the polymer component (a) and the thermosetting component (b). When the content of the coupling agent (e) is at or above the lower limit, the effects of using the coupling agent (e), such as improved dispersibility of the filler (d) in the resin and improved adhesion of the film-like adhesive to the adherend, are more significantly achieved. When the content of the coupling agent (e) is at or below the upper limit, outgassing is further suppressed.

[0265] [Crosslinking agent (f)] When the polymer component (a) is one having functional groups such as vinyl groups, (meth)acryloyl groups, amino groups, hydroxyl groups, carboxyl groups, or isocyanate groups that can bond with other compounds, such as the above-mentioned acrylic resins, the adhesive composition and film-like adhesive may contain a crosslinking agent (f). The crosslinking agent (f) is a component that bonds the functional groups in the polymer component (a) with other compounds to form crosslinks, and by crosslinking in this manner, the initial adhesive strength and cohesive strength of the film-like adhesive can be adjusted.

[0266] Examples of the crosslinking agent (f) include organic polyvalent isocyanate compounds, organic polyvalent imine compounds, metal chelate crosslinking agents (crosslinking agents having a metal chelate structure), and aziridine crosslinking agents (crosslinking agents having an aziridinyl group).

[0267] When an organic polyisocyanate compound is used as the crosslinking agent (f), it is preferable to use a hydroxyl group-containing polymer as the polymer component (a). When the crosslinking agent (f) has an isocyanate group and the polymer component (a) has a hydroxyl group, a crosslinked structure can be easily introduced into the film adhesive by the reaction between the crosslinking agent (f) and the polymer component (a).

[0268] The adhesive composition and film-like adhesive may contain only one type of crosslinking agent (f), or two or more types, and when two or more types are contained, the combination and ratio thereof can be selected arbitrarily.

[0269] When a crosslinking agent (f) is used, the content of the crosslinking agent (f) in the adhesive composition is preferably 0.01 to 20 parts by mass, more preferably 0.1 to 10 parts by mass, and particularly preferably 0.3 to 5 parts by mass, per 100 parts by mass of the polymer component (a). When the content of the crosslinking agent (f) is equal to or greater than the lower limit, the effect of using the crosslinking agent (f) is more pronounced. When the content of the crosslinking agent (f) is equal to or less than the upper limit, excessive use of the crosslinking agent (f) is suppressed.

[0270] [Energy ray curable resin (g)] By containing the energy ray-curable resin (g) in the adhesive composition and film-like adhesive, the properties of the film-like adhesive can be changed by irradiation with energy rays.

[0271] The energy ray curable resin (g) is obtained from an energy ray curable compound. Examples of the energy ray-curable compound include compounds having at least one polymerizable double bond in the molecule, and acrylate compounds having a (meth)acryloyl group are preferred.

[0272] The adhesive composition may contain only one type of energy ray-curable resin (g), or two or more types. When two or more types are contained, the combination and ratio thereof can be selected arbitrarily.

[0273] When an energy ray curable resin (g) is used, the content of the energy ray curable resin (g) in the adhesive composition relative to the total mass of the adhesive composition is preferably 1 to 95 mass%, more preferably 5 to 90 mass%, and particularly preferably 10 to 85 mass%.

[0274] [Photopolymerization initiator (h)] When the adhesive composition and film-like adhesive contain an energy ray-curable resin (g), they may contain a photopolymerization initiator (h) to efficiently promote the polymerization reaction of the energy ray-curable resin (g).

[0275] Examples of the photopolymerization initiator (h) in the adhesive composition include benzoin compounds such as benzoin, benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether, benzoin isobutyl ether, benzoin benzoic acid, benzoin methyl benzoate, and benzoin dimethyl ketal; acetophenone compounds such as acetophenone, 2-hydroxy-2-methyl-1-phenyl-propan-1-one, and 2,2-dimethoxy-1,2-diphenylethan-1-one; and acylphosphines such as bis(2,4,6-trimethylbenzoyl)phenylphosphine oxide and 2,4,6-trimethylbenzoyldiphenylphosphine oxide. oxide compounds; sulfide compounds such as benzyl phenyl sulfide and tetramethylthiuram monosulfide; α-ketol compounds such as 1-hydroxycyclohexyl phenyl ketone; azo compounds such as azobisisobutyronitrile; titanocene compounds such as titanocene; thioxanthone compounds such as thioxanthone; peroxide compounds; diketone compounds such as diacetyl; benzyl; dibenzyl; benzophenone; 2,4-diethylthioxanthone; 1,2-diphenylmethane; 2-hydroxy-2-methyl-1-[4-(1-methylvinyl)phenyl]propanone; quinone compounds such as 1-chloroanthraquinone and 2-chloroanthraquinone. Examples of the photopolymerization initiator (h) include photosensitizers such as amines.

[0276] The adhesive composition may contain only one type of photopolymerization initiator (h), or two or more types. When two or more types are contained, the combination and ratio thereof can be selected arbitrarily.

[0277] When a photopolymerization initiator (h) is used, the content of the photopolymerization initiator (h) in the adhesive composition is preferably 0.1 to 20 parts by mass, more preferably 1 to 10 parts by mass, and particularly preferably 2 to 5 parts by mass, per 100 parts by mass of the energy ray-curable resin (g).

[0278] [General-purpose additives (i)] The general-purpose additive (i) may be a known one and can be arbitrarily selected depending on the purpose, and is not particularly limited. Preferred examples include plasticizers, antistatic agents, antioxidants, colorants (dyes, pigments), gettering agents, etc.

[0279] The adhesive composition and film-like adhesive may contain only one type of general-purpose additive (i), or two or more types, and when there are two or more types, the combination and ratio thereof can be selected arbitrarily. The contents of the adhesive composition and film-like adhesive are not particularly limited and may be appropriately selected depending on the purpose.

[0280] [solvent] The adhesive composition preferably further contains a solvent, as this provides good handleability. The solvent is not particularly limited, but preferred examples include hydrocarbons such as toluene and xylene; alcohols such as methanol, ethanol, 2-propanol, isobutyl alcohol (2-methylpropan-1-ol), and 1-butanol; esters such as ethyl acetate; ketones such as acetone and methyl ethyl ketone; ethers such as tetrahydrofuran; and amides (compounds having an amide bond) such as dimethylformamide and N-methylpyrrolidone. The adhesive composition may contain only one type of solvent, or two or more types, and when two or more types are contained, the combination and ratio thereof can be selected arbitrarily.

[0281] The solvent contained in the adhesive composition is preferably methyl ethyl ketone or the like, since this allows the components contained in the adhesive composition to be mixed more uniformly.

[0282] The content of the solvent in the adhesive composition is not particularly limited and may be selected appropriately depending on, for example, the types of components other than the solvent.

[0283] <<Method of manufacturing adhesive composition>> The adhesive composition can be obtained by blending the components that make up the adhesive composition. The adhesive composition can be produced in the same manner as the pressure-sensitive adhesive composition described above, except that the types of ingredients used are different.

[0284] ◇Method for manufacturing sheets for semiconductor device manufacturing The semiconductor device manufacturing sheet can be manufactured by laminating the above-mentioned layers in a corresponding positional relationship. The method for forming each layer is as described above.

[0285] For example, the semiconductor device manufacturing sheet can be manufactured by preparing the substrate, adhesive layer, intermediate layer, and film-like adhesive in advance, and then laminating these in the order of substrate, adhesive layer, intermediate layer, and film-like adhesive. However, this is just one example of a method for producing a sheet for manufacturing semiconductor device.

[0286] The semiconductor device manufacturing sheet can also be produced, for example, by preparing two or more intermediate laminates in advance, each of which is composed of a plurality of layers stacked together, and then bonding these intermediate laminates together. The configuration of the intermediate laminates can be selected as appropriate. For example, a first intermediate laminate (corresponding to the support sheet) having a configuration in which a substrate and a pressure-sensitive adhesive layer are stacked, and a second intermediate laminate having a configuration in which an intermediate layer and a film-like adhesive are stacked, are prepared in advance, and the pressure-sensitive adhesive layer in the first intermediate laminate and the intermediate layer in the second intermediate laminate are bonded together to produce the semiconductor device manufacturing sheet. However, this is also just one example of a method for producing a sheet for manufacturing semiconductor device.

[0287] For example, when producing a sheet in which the area of ​​the first side of the intermediate layer and the area of ​​the first side of the film-like adhesive are both smaller than the areas of the first side of the pressure-sensitive adhesive layer and the first side of the base material, as shown in Figure 1, a step of processing the intermediate layer and the film-like adhesive to a desired size may be added at any stage in the above-mentioned production method. For example, a sheet for manufacturing a semiconductor device may be produced by adding a step of processing the intermediate layer and the film-like adhesive in the second intermediate laminate to a desired size in the production method using the second intermediate laminate.

[0288] When manufacturing a semiconductor device manufacturing sheet with a release film on the film adhesive, for example, the film adhesive may be prepared on the release film, and the remaining layers may be laminated while maintaining this state to manufacture the semiconductor device manufacturing sheet, or the substrate, pressure-sensitive adhesive layer, intermediate layer, and film adhesive may all be laminated, and then the release film may be laminated on the film adhesive to manufacture the semiconductor device manufacturing sheet. The release film may be removed at a necessary stage before the semiconductor device manufacturing sheet is used.

[0289] A sheet for manufacturing a semiconductor device that has another layer that does not fall under any of the following categories: a substrate, a pressure-sensitive adhesive layer, an intermediate layer, a film-like adhesive, and a release film can be manufactured by adding a step of forming and laminating this other layer at an appropriate time in the above-mentioned manufacturing method.

[0290] ◇Method of using semiconductor device manufacturing sheets (method of manufacturing semiconductor chips with film-like adhesive) The sheet for manufacturing a semiconductor device can be used in the manufacturing process of a semiconductor device when manufacturing a semiconductor chip with a film-like adhesive. Hereinafter, a method for using the sheet for manufacturing semiconductor device (a method for manufacturing semiconductor chips with a film-like adhesive) will be described in detail with reference to the drawings.

[0291] (First embodiment) 3A, 3B, and 3C are cross-sectional views for schematically explaining an example of a method for using a semiconductor device manufacturing sheet, showing a case in which the semiconductor device manufacturing sheet is attached to a semiconductor wafer before use. In this method, the semiconductor device manufacturing sheet is used as a dicing die bonding sheet. Here, the method for using the semiconductor device manufacturing sheet 101 shown in FIG. 1 will be described as an example.

[0292] First, as shown in FIG. 3A, while the sheet 101 for manufacturing semiconductor device with the release film 15 removed is heated, the film adhesive 14 therein is attached to the back surface 9b' of the semiconductor wafer 9'. Reference numeral 9a' denotes the circuit formation surface of the semiconductor wafer 9'.

[0293] The heating temperature when attaching the semiconductor device manufacturing sheet 101 is not particularly limited, but is preferably 40 to 70° C. in order to further improve the thermal attachment stability of the semiconductor device manufacturing sheet 101 .

[0294] Width W of the intermediate layer 13 in the semiconductor device manufacturing sheet 101 13 and the width W of the film adhesive 14 14 The maximum value of each of these is the width W of the semiconductor wafer 9'. 9’ The maximum value is either exactly the same as the maximum value of , or it is not the same, but the error is small and it is almost the same.

[0295] Next, the laminate of the semiconductor device manufacturing sheet 101 and the semiconductor wafer 9' obtained above is cut with a blade from the circuit formation surface 9a' side of the semiconductor wafer 9' (blade dicing is performed) to divide the semiconductor wafer 9' and cut the film-like adhesive 14.

[0296] Blade dicing can be performed by a known method. For example, a region (the non-laminated region) near the periphery of the first surface 12a of the pressure-sensitive adhesive layer 12 in the semiconductor device manufacturing sheet 101, where the intermediate layer 13 and the film-like adhesive 14 are not laminated, can be fixed to a jig (not shown) such as a ring frame, and then the semiconductor wafer 9′ can be divided and the film-like adhesive 14 can be cut using a blade.

[0297] 3B, this process produces a plurality of semiconductor chips 914 with a film-like adhesive, each of which includes a semiconductor chip 9 and a cut film-like adhesive 140 provided on its back surface 9b. These semiconductor chips 914 with a film-like adhesive are aligned and fixed on the intermediate layer 13 in the laminated sheet 10, constituting a group 910 of semiconductor chips with a film-like adhesive. The back surface 9b of the semiconductor chip 9 corresponds to the back surface 9b' of the semiconductor wafer 9'. In addition, in Figures 3A, 3B, and 3C, reference numeral 9a denotes the circuit formation surface of the semiconductor chip 9, which corresponds to the circuit formation surface 9a' of the semiconductor wafer 9'.

[0298] During blade dicing, the semiconductor wafer 9' is divided by cutting it across its entire thickness, and the semiconductor device manufacturing sheet 101 is cut from the first surface 14a of the film-like adhesive 14 to the area halfway through the intermediate layer 13, thereby cutting the film-like adhesive 14 across its entire thickness, and it is preferable not to cut it down to the pressure-sensitive adhesive layer 12. That is, during blade dicing, it is preferable that the blade cuts into the laminate of the semiconductor device manufacturing sheet 101 and the semiconductor wafer 9' in the stacking direction from the circuit forming surface 9a' of the semiconductor wafer 9' to at least the first surface 13a of the intermediate layer 13, but not to the surface opposite the first surface 13a of the intermediate layer 13 (i.e., the contact surface with the adhesive layer 12).

[0299] In this process, it is possible to easily prevent the blade from reaching the substrate 11, thereby suppressing the generation of cutting chips from the substrate 11. Furthermore, since the main component of the intermediate layer 13 cut by the blade is a non-silicon-based resin having a weight-average molecular weight of 100,000 or less, and in particular, since the weight-average molecular weight is 100,000 or less, the generation of cutting chips from the intermediate layer 13 can also be suppressed.

[0300] The conditions for blade dicing are not particularly limited and may be adjusted appropriately depending on the purpose. In general, the blade rotation speed is preferably 15,000 to 50,000 rpm, and the blade movement speed is preferably 5 to 75 mm / sec.

[0301] After blade dicing, the semiconductor chip 914 with the film-like adhesive is separated from the intermediate layer 13 in the laminated sheet 10 and picked up, as shown in Figure 3C. Here, a case is shown in which the semiconductor chip 914 with the film-like adhesive is separated in the direction of arrow P using a separating means 7 such as a vacuum collet. Note that the separating means 7 is not shown in cross section here. The semiconductor chip 914 with the film adhesive attached can be picked up by a known method.

[0302] The semiconductor chip 914 with the film adhesive attached may be picked up, for example, by using the separating means 7 to suck and lift up the surface of the semiconductor chip 914 . Alternatively, the back surface 11b of the substrate may be sucked by the suction table 40, while the entire area where the intermediate layer and film-like adhesive of the semiconductor device manufacturing sheet are laminated is pushed up from the substrate side by the suction table and push-up member, and the surface of the semiconductor chip 914 is sucked up and pulled up by the detachment means 7.

[0303] When picking up using the suction table 40 as described above, since the maximum cross-sectional height of the back surface 11b of the substrate 11 is 2000 nm or less, the release of suction between the back surface 11b of the substrate 11 and the suction table 40 can be suppressed, thereby improving the pick-up suitability. Furthermore, by making the surface roughness of the back surface 11b of the substrate 11 200 nm or less, it is possible to prevent the suction between the back surface 11b of the substrate 11 and the suction table 40 from being released, thereby improving the pick-up suitability.

[0304] When the silicon concentration ratio on the first surface 13a of the intermediate layer 13 is 1 to 20%, the semiconductor chip 914 with the film adhesive can be picked up more easily. When the intermediate layer 13 contains, for example, an ethylene vinyl acetate copolymer, which is the non-silicon-based resin, and a siloxane-based compound, which is the additive, and the content of the ethylene vinyl acetate copolymer in the intermediate layer relative to the total mass of the intermediate layer is 90 to 99.99 mass%, and the content of the siloxane-based compound in the intermediate layer relative to the total mass of the intermediate layer is 0.01 to 10 mass%, the semiconductor chip 914 with film-like adhesive can be picked up more easily.

[0305] A preferred embodiment of the method for manufacturing a semiconductor chip with a film-like adhesive described above is, for example, a method for manufacturing a semiconductor chip with a film-like adhesive, which includes a semiconductor chip and a film-like adhesive provided on the back surface of the semiconductor chip, the sheet for manufacturing a semiconductor device includes the base material, a pressure-sensitive adhesive layer, an intermediate layer, and a film-like adhesive, The manufacturing method includes the steps of heating the semiconductor device manufacturing sheet while attaching the film-like adhesive therein to the back surface of the semiconductor wafer, cutting the semiconductor wafer with the film-like adhesive attached across its entire thickness from the circuit formation side to divide it into semiconductor chips, cutting the semiconductor device manufacturing sheet in its thickness direction from the film-like adhesive side to a region halfway through the intermediate layer to cut the film-like adhesive, but not cutting down to the pressure-sensitive adhesive layer, thereby obtaining a group of semiconductor chips with film-like adhesive in which multiple semiconductor chips with film-like adhesive are aligned on the intermediate layer, and removing and picking up the semiconductor chips with film-like adhesive from the intermediate layer (sometimes referred to in this specification as "manufacturing method 1").

[0306] After obtaining the group of semiconductor chips with the film-like adhesive, before picking up the semiconductor chips with the film-like adhesive, the laminated sheet may be expanded in a direction parallel to the surface (first surface) of the pressure-sensitive adhesive layer facing the intermediate layer, and while maintaining this state, the peripheral portion of the laminated sheet on which the semiconductor chips with the film-like adhesive (group of semiconductor chips with the film-like adhesive) are not placed may be heated. By doing so, the distance between adjacent semiconductor chips on the laminated sheet, i.e., the kerf width, can be maintained sufficiently wide and highly uniform while the peripheral edge is shrunk, and the semiconductor chips with the film adhesive attached can be picked up more easily.

[0307] (Second embodiment) Figures 4A, 4B, and 4C are cross-sectional views for schematically explaining an example of a method for manufacturing semiconductor chips, which are targets for using a semiconductor device manufacturing sheet, and show the case where semiconductor chips are manufactured by dicing a semiconductor wafer, which involves forming a modified layer. 5A, 5B, and 5C are cross-sectional views for schematically explaining another example of a method for using a semiconductor device manufacturing sheet, showing a case in which the semiconductor device manufacturing sheet is attached to a semiconductor chip before use. In this method, the semiconductor device manufacturing sheet is used as a die bonding sheet. Here, the method for using the semiconductor device manufacturing sheet 101 shown in FIG. 1 will be described as an example.

[0308] First, prior to using the semiconductor device manufacturing sheet 101, as shown in FIG. 4A, a semiconductor wafer 9′ is prepared, and a backgrinding tape (sometimes called a “surface protection tape”) 8 is attached to its circuit formation surface 9a′. In Figures 4A, 4B, and 4C, the symbol W 9’ indicates the width of the semiconductor wafer 9'.

[0309] Next, a laser beam (not shown) is irradiated so as to be focused at a focal point set inside the semiconductor wafer 9', thereby forming a modified layer 90' inside the semiconductor wafer 9' as shown in FIG. 4B. The laser light is preferably irradiated onto the semiconductor wafer 9' from the rear surface 9b' side of the semiconductor wafer 9'.

[0310] The focal position at this time is the planned dividing (dicing) position of the semiconductor wafer 9', and is set so that semiconductor chips of the desired size, shape and number can be obtained from the semiconductor wafer 9'.

[0311] Next, a grinder (not shown) is used to grind the back surface 9b' of the semiconductor wafer 9', thereby adjusting the thickness of the semiconductor wafer 9' to a desired value, and by utilizing the grinding force applied to the semiconductor wafer 9' at this time, the semiconductor wafer 9' is divided at the portions where the modified layers 90' are formed, thereby producing a plurality of semiconductor chips 9 as shown in FIG.

[0312] The modified layer 90' of the semiconductor wafer 9' is different from other parts of the semiconductor wafer 9' in that it has been altered by the irradiation of the laser light and has a reduced strength. Therefore, when a force is applied to the semiconductor wafer 9' on which the modified layer 90' has been formed, the force is applied to the modified layer 90', and the semiconductor wafer 9' is cracked at the site of the modified layer 90', resulting in multiple semiconductor chips 9.

[0313] By the above steps, semiconductor chips 9 are obtained, which are the targets of use of semiconductor device manufacturing sheet 101. More specifically, this step yields semiconductor chip group 901 in which multiple semiconductor chips 9 are aligned and fixed on backgrind tape 8.

[0314] When the semiconductor chip group 901 is viewed from above in a plane, the planar shape formed by connecting the outermost portions of the semiconductor chip group 901 (in this specification, such a planar shape may be simply referred to as the "planar shape of the semiconductor chip group") is exactly the same as the planar shape of the semiconductor wafer 9' when viewed in a similar plane, or the differences between these planar shapes are so minor that they can be ignored, and it can be said that the planar shape of the semiconductor chip group 901 is generally the same as the planar shape of the semiconductor wafer 9'. Therefore, the width of the planar shape of the semiconductor chip group 901 is, as shown in FIG. 4C, the width W of the semiconductor wafer 9′. 9’ The maximum width of the planar shape of the semiconductor chip group 901 is the width W of the semiconductor wafer 9′. 9’ can be considered to be the same as the maximum value of

[0315] Note that, here, we show a case where semiconductor chips 9 can be produced from semiconductor wafer 9' as intended, but depending on the conditions when grinding the back surface 9b' of semiconductor wafer 9', it may be that some areas of semiconductor wafer 9' are not divided into semiconductor chips 9.

[0316] Next, the semiconductor chips 9 (semiconductor chip group 901) obtained above are used to manufacture semiconductor chips with a film-like adhesive. 5A, one semiconductor device manufacturing sheet 101 from which release film 15 has been removed is heated, and film adhesive 14 therein is attached to the back surfaces 9b of all semiconductor chips 9 in semiconductor chip group 901. In this case, the object to which film adhesive 14 is attached may be a semiconductor wafer that has not been completely divided.

[0317] Width W of the intermediate layer 13 in the semiconductor device manufacturing sheet 101 13 and the width W of the film adhesive 14 14 The maximum value of each of these is the width W of the semiconductor wafer 9'. 9’ (in other words, the width of the semiconductor chip group 901) or, although not the same, the error is slight and the result is approximately the same.

[0318] At this time, the film-like adhesive 14 (semiconductor device manufacturing sheet 101) is attached to the semiconductor chip group 901 in the same manner as in the case of attaching the film-like adhesive 14 (semiconductor device manufacturing sheet 101) to the semiconductor wafer 9' in the manufacturing method 1, except that the semiconductor chip group 901 is used instead of the semiconductor wafer 9'.

[0319] Next, the backgrind tape 8 is removed from the semiconductor chip group 901 in this fixed state. Then, as shown in FIG. 5B, the semiconductor device manufacturing sheet 101 is expanded by being stretched in a direction parallel to its surface (for example, the first surface 12a of the adhesive layer 12) while being cooled. Here, the direction of expansion of the semiconductor device manufacturing sheet 101 is indicated by arrow E1. By expanding in this manner, the film-like adhesive 14 is cut along the outer periphery of the semiconductor chip 9. More specifically, the expanding process may be as follows:

[0320] The expanding process produces a plurality of semiconductor chips 914 with a film-like adhesive, each of which includes a semiconductor chip 9 and a cut film-like adhesive 140 provided on its back surface 9b. These semiconductor chips 914 with a film-like adhesive are aligned and fixed on the intermediate layer 13 in the laminated sheet 10, constituting a group 910 of semiconductor chips with a film-like adhesive. The semiconductor chip 914 with film-like adhesive and the group of semiconductor chips 910 with film-like adhesive obtained here are both substantially the same as the semiconductor chip 914 with film-like adhesive and the group of semiconductor chips 910 with film-like adhesive obtained by the manufacturing method 1 described above.

[0321] As explained above, if a portion of the semiconductor wafer 9' is not divided into semiconductor chips 9 when the semiconductor wafer 9' is divided, this region will be divided into semiconductor chips by performing this process.

[0322] In the expanding step, the sheet 101 for manufacturing semiconductor device is preferably expanded at a temperature of 0° C. or below, and more preferably at a temperature of −5 to 5° C. By cooling and expanding the sheet 101 for manufacturing semiconductor device in this manner (performing cool expansion), the film-like adhesive 14 can be cut more easily and with higher precision.

[0323] The expanding step can be performed by a known method. For example, the region (the non-laminated region) of the first surface 12a of the pressure-sensitive adhesive layer 12 in the semiconductor device manufacturing sheet 101 near the periphery where the intermediate layer 13 and the film-like adhesive 14 are not laminated is fixed to a jig (not shown) such as a ring frame, and then, while the back surface 11b of the base material 11 of the semiconductor device manufacturing sheet 101 is suctioned by a suction table 40, the entire region of the semiconductor device manufacturing sheet 101 where the intermediate layer 13 and the film-like adhesive 14 are laminated is pushed up from the base material 11 side in a direction from the base material 11 toward the pressure-sensitive adhesive layer 12 using the suction table 40 and a push-up member (not shown), thereby expanding the semiconductor device manufacturing sheet 101.

[0324] The expansion speed in the expanding step (the speed at which the suction table and the push-up members rise) is, for example, 1 to 400 mm / sec. The expansion amount in the expanding step is, for example, 3 to 16 mm. Next, the suction table 40 and the push-up member are lowered to release the expanded state in the expanding step.

[0325] Typically, the suction table 40 has a gap that penetrates through its thickness, and the pressure is reduced on the side of the suction table opposite to the side that is in contact with the semiconductor device manufacturing sheet 101, so that the semiconductor device manufacturing sheet 101 is adsorbed and fixed by the suction table 40.

[0326] By setting the maximum cross-sectional height of the back surface 11b of the base material 11 to 2000 nm or less, it is possible to prevent the suction between the back surface 11b of the base material 11 and the suction table 40 from being released in the expanding step. By setting the surface roughness of the rear surface 11b of the base material 11 to 200 nm or less, it is possible to prevent the suction between the rear surface 11b of the base material 11 and the suction table 40 from being released in the expanding step.

[0327] As shown in Figure 5B, in the expanding process, the non-laminated region of the first surface 12a of the adhesive layer 12, where the intermediate layer 13 and the film-like adhesive 14 are not laminated, is approximately parallel to the first surface 13a of the intermediate layer 13. However, as described above, when the semiconductor device manufacturing sheet 101 is expanded by being pushed up, the non-laminated region includes an inclined surface whose height decreases in the opposite direction to the pushing-up direction as it approaches the outer periphery of the adhesive layer 12.

[0328] During the expanding process, since the semiconductor device manufacturing sheet 101 has an intermediate layer 13 (in other words, the film-like adhesive 14 before cutting is provided on the intermediate layer 13), the film-like adhesive 14 can be cut accurately at the desired location (in other words, along the outer periphery of the semiconductor chip 9), thereby preventing poor cutting.

[0329] After the expansion, as shown in FIG. 5C, the semiconductor chip 914 with the film adhesive attached is separated from the intermediate layer 13 in the laminated sheet 10 and picked up. The pickup at this time can be performed in the same manner as the pickup in the manufacturing method 1 described above, and the pickup suitability is also the same as that in the manufacturing method 1.

[0330] For example, in this step as well, if the silicon concentration ratio on the first surface 13a of the intermediate layer 13 is 1 to 20%, the semiconductor chip 914 with the film adhesive can be picked up more easily. Furthermore, if the intermediate layer 13 contains, for example, an ethylene-vinyl acetate copolymer, which is the non-silicon-based resin, and a siloxane-based compound, which is the additive, and the content of the ethylene-vinyl acetate copolymer in the intermediate layer relative to the total mass of the intermediate layer is 90 to 99.99 mass%, and the content of the siloxane-based compound in the intermediate layer relative to the total mass of the intermediate layer is 0.01 to 10 mass%, the semiconductor chip 914 with film-like adhesive can be picked up more easily.

[0331] A preferred embodiment of the method for manufacturing a semiconductor chip with a film-like adhesive described above is, for example, a method for manufacturing a semiconductor chip with a film-like adhesive, which includes a semiconductor chip and a film-like adhesive provided on the back surface of the semiconductor chip, the sheet for manufacturing a semiconductor device includes the base material, a pressure-sensitive adhesive layer, an intermediate layer, and a film-like adhesive, The manufacturing method includes a step of forming a modified layer inside the semiconductor wafer by irradiating a laser beam so that the laser beam is focused on a focal point set inside the semiconductor wafer; a step of grinding the back surface of the semiconductor wafer after the modified layer has been formed, and dividing the semiconductor wafer at the portion where the modified layer has been formed by utilizing the force applied to the semiconductor wafer during grinding to obtain a group of semiconductor chips in which a plurality of the semiconductor chips are aligned; a step of attaching the film-like adhesive therein to the back surfaces of all of the semiconductor chips in the group of semiconductor chips while heating the semiconductor device manufacturing sheet; and a step of attaching the film-like adhesive therein to the back surfaces of the substrate opposite to the side having the pressure-sensitive adhesive layer by a suction table while cooling the semiconductor device manufacturing sheet after being attached to the semiconductor chips. The method includes the steps of: pushing up the entire area of ​​the semiconductor device manufacturing sheet where the intermediate layer and the film-like adhesive are laminated from the base material side using the suction table and push-up member, and stretching it in a direction parallel to the surface, thereby cutting the film-like adhesive along the outer periphery of the semiconductor chip, thereby obtaining a group of semiconductor chips with film-like adhesive in which multiple semiconductor chips with film-like adhesive are aligned on the intermediate layer; heating the peripheral portion of the stretched laminated sheet where the semiconductor chips with film-like adhesive (group of semiconductor chips with film-like adhesive) are not placed; and separating the semiconductor chips with film-like adhesive from the intermediate layer and picking them up (sometimes referred to in this specification as "manufacturing method 2").

[0332] 1 has been used as an example to explain the usage of the semiconductor device manufacturing sheet 101 shown in Fig. 1 in both manufacturing method 1 and manufacturing method 2, but other semiconductor device manufacturing sheets according to this embodiment can also be used in the same way. In that case, if necessary, other processes may be added as appropriate based on the differences in the configuration between this semiconductor device manufacturing sheet and semiconductor device manufacturing sheet 101, and the semiconductor device manufacturing sheet may be used.

[0333] By heating the peripheral portion of the laminate sheet where the semiconductor chips with film adhesive (group of semiconductor chips with film adhesive) are not placed, the peripheral portion is shrunk, and the distance between adjacent semiconductor chips on the laminate sheet, i.e., the kerf width, can be maintained sufficiently wide and highly uniform, thereby making it easier to pick up the semiconductor chips with film adhesive.

[0334] (Third embodiment) 6A, 6B, and 6C are cross-sectional views for schematically explaining an example of a method for manufacturing semiconductor chips, which are targets for using a semiconductor device manufacturing sheet. The diagram shows a case in which a semiconductor wafer is diced by a dicing before grinding (DBG) method or the like to manufacture semiconductor chips.

[0335] In this method, as shown in FIG. 6A, a semiconductor wafer 9′ is half-cut from one surface 9a′, which is the circuit-forming surface, by blade dicing, laser dicing, water dicing, or other method to form a groove 90′.

[0336] 6B, the surface (back surface) 9b' opposite to the front surface (circuit-forming surface) 9a' of the semiconductor wafer 9' is ground. Grinding of the back surface 9b' can be performed by a known method, for example, using a grinder 62. Grinding of the back surface 9b' is preferably performed by adhering a backgrinding tape 8 to the front surface 9a' of the semiconductor wafer 9', as shown here.

[0337] Then, by grinding the back surface 9b' until the grooves 90' are reached, a plurality of semiconductor chips 9 are obtained from the semiconductor wafer 9', as shown in Fig. 6C. The back surface 9b' of the semiconductor wafer 9' becomes the back surface 9b of the semiconductor chip 9, i.e., the surface on which the film adhesive 14 is provided. In Figures 6A and 6C, symbol W 9’ indicates the width of the semiconductor wafer 9'.

[0338] By the above steps, semiconductor chips 9 are obtained, which are the targets of use of semiconductor device manufacturing sheet 101. More specifically, this step yields semiconductor chip group 902 in which multiple semiconductor chips 9 are aligned and fixed on backgrind tape 8.

[0339] In the manufacturing method of the third embodiment, semiconductor chips with a film-like adhesive can be obtained by expanding in the same manner as in the manufacturing method of the second embodiment, except that semiconductor chip group 901 is replaced with semiconductor chip group 902.

[0340] The expansion in the third embodiment of the manufacturing method can be performed in the same manner as the expansion in the manufacturing method 2 described above, and the suitability of the expansion is also the same as the suitability of the expansion in the manufacturing method 2.

[0341] The pickup in the third embodiment of the manufacturing method can be performed in the same manner as the pickup in the manufacturing method 1 described above, and the pickup suitability is also the same as that in the manufacturing method 1.

[0342] A preferred embodiment of the method for manufacturing a semiconductor chip with a film-like adhesive is, for example, a method for manufacturing a semiconductor chip with a film-like adhesive comprising a semiconductor chip and a film-like adhesive provided on the back surface of the semiconductor chip, wherein the semiconductor device manufacturing sheet comprises the base material, a pressure-sensitive adhesive layer, an intermediate layer, and a film-like adhesive, and the manufacturing method includes the steps of: cutting a semiconductor wafer in half to form grooves on one surface of the semiconductor wafer, which is the surface on which a circuit is formed; grinding the back surface of the semiconductor wafer after the grooves have been formed down to the groove formation portion, thereby dividing the semiconductor wafer at the groove formation portion to obtain a group of semiconductor chips in a state where a plurality of semiconductor chips are aligned; heating the semiconductor device manufacturing sheet while attaching the film-like adhesive therein to the back surfaces of all of the semiconductor chips in the group of semiconductor chips; While cooling the semiconductor device manufacturing sheet, the surface of the substrate opposite to the side having the adhesive layer is sucked with an adsorption table, and the entire area of ​​the semiconductor device manufacturing sheet where the intermediate layer and the film-like adhesive are laminated is pushed up from the substrate side with the adsorption table and push-up member, and stretched in a direction parallel to the surface, thereby cutting the film-like adhesive along the outer periphery of the semiconductor chip, thereby obtaining a group of semiconductor chips with film-like adhesive in which multiple semiconductor chips with film-like adhesive are aligned on the intermediate layer; a step of heating the peripheral portion of the stretched laminated sheet where the semiconductor chips with film-like adhesive (group of semiconductor chips with film-like adhesive) are not placed; and a step of separating the semiconductor chips with film-like adhesive from the intermediate layer and picking them up. [Example]

[0343] The present invention will be described in more detail below with reference to specific examples, although the present invention is not limited to the examples shown below.

[0344] <<Raw materials for manufacturing adhesive compositions>> The raw materials used in the production of the adhesive composition are listed below. [Polymer component (a)] (a)-1: An acrylic resin (weight average molecular weight 800,000, glass transition temperature 9°C) obtained by copolymerizing methyl acrylate (95 parts by mass) and 2-hydroxyethyl acrylate (5 parts by mass). [Epoxy resin (b1)] (b1)-1: Cresol novolac epoxy resin with an acryloyl group added (Nippon Kayaku Co., Ltd. "CNA147", epoxy equivalent 518 g / eq, number average molecular weight 2100, unsaturated group content equal to the epoxy group). [Thermal curing agent (b2)] (b2)-1: Aralkyl phenolic resin (Mitsui Chemicals, Inc., "Milex XLC-4L," number average molecular weight 1100, softening point 63°C) [Filler (d)] (d)-1: Spherical silica ("YA050C-MJE" manufactured by Admatechs Co., Ltd., average particle size 50 nm, methacrylsilane-treated product) [Coupling agent (e)] (e)-1: Silane coupling agent, 3-glycidoxypropylmethyldiethoxysilane ("KBE-402" manufactured by Shin-Etsu Silicones Co., Ltd.) [Crosslinking agent (f)] (f)-1: Tolylene diisocyanate crosslinking agent ("Coronate L" manufactured by Tosoh Corporation)

[0345] [Reference example 1] <<Production and Evaluation of Sheets for Semiconductor Device Manufacturing (1)>> <Production of substrate> Low-density polyethylene (LDPE, "Sumikathen L705" manufactured by Sumitomo Chemical Co., Ltd.) was melted using an extruder, and the melt was extruded using the T-die method. The extrudate was then biaxially stretched using a cooling roll to obtain an LDPE substrate (thickness 110 μm).

[0346] <Preparation of adhesive layer> A non-energy ray-curable adhesive composition was produced containing an acrylic resin (Olivine BPS 6367X, manufactured by Toyochem Co., Ltd.) (100 parts by mass) as an adhesive resin (I-1a) and a crosslinking agent (BXX 5640, manufactured by Toyochem Co., Ltd.) (1 part by mass).

[0347] Next, a release film made of polyethylene terephthalate, one side of which had been treated with silicone for release, was used, and the adhesive composition obtained above was applied to the release-treated surface, followed by heating and drying at 100°C for 2 minutes to produce a non-energy ray-curable adhesive layer (thickness 10 μm).

[0348] <Creating the intermediate layer> At room temperature, 15 g of ethylene vinyl acetate copolymer (EVA, weight average molecular weight 30,000, content of structural units derived from vinyl acetate 25% by mass) was dissolved in 85 g of tetrahydrofuran, and 1.5 g of a siloxane compound (polydimethylsiloxane, "BYK-333" manufactured by BYK Japan, with 45 to 230 structural units represented by the formula "-Si(-CH3)2-O-" per molecule) was added to the resulting solution and stirred to prepare a composition for forming an intermediate layer.

[0349] A release film made of polyethylene terephthalate, one side of which had been treated with silicone for release, was used, and the composition for forming the intermediate layer obtained above was applied to the release-treated surface, followed by heating and drying at 70°C for 5 minutes to produce an intermediate layer (thickness 20 μm).

[0350] <Preparation of film adhesive> A thermosetting adhesive composition containing polymer component (a)-1 (100 parts by mass), epoxy resin (b1)-1 (10 parts by mass), thermosetting agent (b2)-1 (1.5 parts by mass), filler (d)-1 (75 parts by mass), coupling agent (e)-1 (0.5 parts by mass), and crosslinker (f)-1 (0.5 parts by mass) was produced.

[0351] Next, a release film made of polyethylene terephthalate, one side of which had been treated with silicone for release, was used, and the adhesive composition obtained above was applied to the release-treated surface, followed by heating and drying at 80°C for 2 minutes to produce a thermosetting film-like adhesive (thickness 7 μm).

[0352] <Production of semiconductor device manufacturing sheets> The exposed surface of the adhesive layer obtained above, opposite to the side with the release film, was bonded to one surface of the substrate obtained above to produce a first intermediate laminate with a release film (in other words, a support sheet with a release film). The exposed surface of the film-like adhesive obtained above, opposite the side with the release film, was bonded to the exposed surface of the intermediate layer obtained above, opposite the side with the release film, to produce a second intermediate laminate with a release film (a laminate of a release film, an intermediate layer, a film-like adhesive, and a release film).

[0353] Next, this second intermediate laminate with a release film was punched using a cutting blade from the release film on the intermediate layer side to the film-like adhesive, and unnecessary parts were removed to produce a second intermediate laminate processed product with a release film, which was composed of a film-like adhesive (thickness 7 μm) with a circular planar shape (diameter 305 mm), an intermediate layer (thickness 20 μm), and a release film laminated in this order in the thickness direction on the release film on the film-like adhesive side.

[0354] Next, the release film was removed from the first intermediate laminate with the release film obtained above to expose one surface of the pressure-sensitive adhesive layer. Furthermore, the circular release film was removed from the second intermediate laminate processed product with the release film obtained above to expose one surface of the intermediate layer. Next, the newly exposed surface of the pressure-sensitive adhesive layer in the first intermediate laminate was bonded to the newly exposed surface of the intermediate layer in the second intermediate laminate product. The substrate and pressure-sensitive adhesive layer (i.e., support sheet) in the laminate thus obtained were punched from the substrate side using a cutting blade (370 mm) to remove unnecessary portions so that the planar shape of the support sheet was circular (diameter 370 mm) and concentric with the circular film-like adhesive and intermediate layer (diameter 305 mm). As a result of the above, a sheet for manufacturing a semiconductor device with a release film was obtained, which was composed of a substrate (thickness 110 μm), an adhesive layer (thickness 10 μm), an intermediate layer (thickness 20 μm), a film-like adhesive (thickness 7 μm), and a release film laminated in this order in the thickness direction.

[0355] <Calculation of the silicon concentration ratio on the surface of the intermediate layer facing the film adhesive> In the manufacturing process of the above-mentioned semiconductor device manufacturing sheet, the exposed surface of the intermediate layer before being bonded to the adhesive layer was analyzed by XPS to measure the concentrations (atomic %) of carbon (C), oxygen (O), nitrogen (N) and silicon (Si). From these measurements, the ratio (%) of the silicon concentration to the total concentration of carbon, oxygen, nitrogen and silicon was calculated. The XPS analysis was performed using an X-ray photoelectron spectrometer (ULVAC's "Quantra SXM") under conditions of an irradiation angle of 45°, an X-ray beam diameter of 20 μmφ, and an output of 4.5 W. The results are shown in the "Element concentration ratio (%) in the intermediate layer" column in Table 1, along with the concentration ratios (%) of other elements.

[0356] <Evaluation of the effect of suppressing the generation of cutting debris during blade dicing> [Manufacturing silicon chips with film adhesive] The release film was removed from the sheet for manufacturing a semiconductor device obtained above. Using a silicon wafer (diameter 300 mm, thickness 75 μm) whose back surface had been polished with a dry polishing finish, the above-mentioned sheet for manufacturing semiconductor device was attached to the back surface (polished surface) of the wafer using a tape mounter ("Adwill RAD2500" manufactured by Lintec Corporation) with the film adhesive while heating to 60° C. This resulted in a laminate (a laminate formed by laminating the laminate sheet, film adhesive, and silicon wafer in this order in the thickness direction) constituted by the substrate, pressure-sensitive adhesive layer, intermediate layer, film adhesive, and silicon wafer.

[0357] Next, the area of ​​the first surface of the pressure-sensitive adhesive layer in the laminate near the peripheral edge where no intermediate layer was provided (the non-laminated area) was fixed to a ring frame for wafer dicing. Next, the silicon wafer was divided and the film adhesive was cut by dicing using a dicing machine (DISCO Corporation, "DFD6361"), obtaining silicon chips measuring 8 mm x 8 mm. The dicing was performed at a blade rotation speed of 30,000 rpm and a blade movement speed of 30 mm / sec, by cutting the semiconductor device manufacturing sheet with the blade from the surface of the film adhesive attached to the silicon wafer to the intermediate region of the intermediate layer (i.e., the entire thickness direction of the film adhesive and the intermediate layer from the surface of the film adhesive side to the intermediate region). The blade used was a "Z05-SD2000-D1-90 CC" manufactured by DISCO Corporation. As a result of the above, a group of silicon chips with film-like adhesive was obtained, in which a large number of silicon chips with film-like adhesive, each comprising a silicon chip and a cut film-like adhesive applied to its back surface, were aligned and fixed on the intermediate layer in the laminated sheet by the film-like adhesive therein.

[0358] [Evaluation of the effect of suppressing cutting chip generation] Using a digital microscope (Keyence Corporation, "VH-Z100"), the group of silicon chips with film-like adhesive obtained above were observed from above the silicon chip side to check for the presence or absence of cutting debris. If no cutting debris was generated at all, it was rated "A," and if even a small amount of cutting debris was generated, it was rated "B." The results are shown in Table 1.

[0359] <Evaluation of the cuttability of film adhesives during expansion> [Manufacturing silicon chips with film adhesive] A silicon wafer having a circular planar shape, a diameter of 300 mm, and a thickness of 775 μm was used, and a backgrind tape ("Adwill E-3100TN" manufactured by Lintec Corporation) was attached to one surface of the wafer. Next, a laser beam was irradiated using a laser beam irradiation device (DISCO Corporation, "DFL73161") so as to be focused at a focal point set inside the silicon wafer, thereby forming a modified layer inside the silicon wafer. At this time, the focal point was set so that a large number of silicon chips measuring 8 mm x 8 mm were obtained from the silicon wafer. The laser beam was irradiated from the other side of the silicon wafer (the side without the backgrind tape). Next, the other surface of the silicon wafer was ground using a grinder to a thickness of 30 μm, and the grinding force applied to the silicon wafer at this time was used to divide the silicon wafer at the location where the modified layer was formed, thereby producing a group of silicon chips in which the silicon chips were aligned and fixed on the backgrind tape.

[0360] Next, using a tape mounter ("Adwill RAD2500" manufactured by Lintec Corporation), one of the semiconductor device manufacturing sheets obtained above was heated to 60°C, and the film adhesive contained therein was attached to the other surface (in other words, the ground surface) of all of the silicon chips (silicon chip group). Next, the area of ​​the first surface of the adhesive layer in the semiconductor device manufacturing sheet after it had been attached to the group of silicon chips, near the periphery where no intermediate layer was provided (the non-laminated area), was fixed to a ring frame for wafer dicing.

[0361] Next, the backgrind tape was removed from the group of silicon chips in this fixed state. Then, using a fully automatic die separator (Disco Corporation's "DDS2300"), the semiconductor device manufacturing sheet was cooled in an environment of 0°C while being expanded in a direction parallel to its surface, thereby cutting the film-like adhesive along the periphery of the silicon chip. At this time, the peripheral portion of the semiconductor device manufacturing sheet was fixed, and the entire area of ​​the semiconductor device manufacturing sheet where the intermediate layer and film-like adhesive were laminated was pushed up by a height of 15 mm from the substrate side, thereby expanding. This resulted in a group of silicon chips with film-like adhesive, in which multiple silicon chips with film-like adhesive, each comprising a silicon chip and a film-like adhesive after cutting applied to the other surface (ground surface) of the silicon chip, were aligned and fixed on the intermediate layer.

[0362] Next, the sheet for manufacturing semiconductor device was unexpanded once, and then the laminate (i.e., the laminate sheet) composed of the substrate, adhesive layer, and intermediate layer was expanded at room temperature in a direction parallel to the first surface of the adhesive layer. Furthermore, while maintaining this expanded state, the peripheral portion of the laminate sheet, where the silicon chip with the film-like adhesive was not placed, was heated. This caused the peripheral portion to shrink, while maintaining the kerf width between adjacent silicon chips on the laminate sheet at a certain value or more.

[0363] [Evaluation of the cuttability of film adhesives] During the production of the above-mentioned group of silicon chips with film-like adhesive, the group of silicon chips with film-like adhesive obtained above was observed from above the silicon chip side using a digital microscope (Keyence Corporation "VH-Z100"). The number of cut lines in the film-like adhesive extending in one direction, which would have been formed if the film-like adhesive had been properly cut by expanding the semiconductor device manufacturing sheet, and the number of cut lines in the film-like adhesive extending in a direction perpendicular to this direction, that were not actually formed and the number of cut lines that were incompletely formed were counted, and the cuttability of the film-like adhesive was evaluated according to the following evaluation criteria. The results are shown in Table 1. (Evaluation criteria) A: The total number of cut lines in the film adhesive that are not actually formed and cut lines in the film adhesive that are incompletely formed is 5 or less. B: The total number of cut lines in the film-like adhesive that were not actually formed and cut lines in the film-like adhesive that were incompletely formed is 6 or more.

[0364] <Evaluation of pick-up ability of silicon chips with film adhesive after expansion> After evaluating the cuttability of the film adhesive as described above, the group of silicon chips with film adhesive were then picked up from the intermediate layer of the laminated sheet using a die bonding machine (Fasford Technology's "PU100") under conditions of a push-up height of 250 μm, a push-up speed of 5 mm / s, and a push-up time of 500 ms. If all silicon chips with film adhesive were successfully picked up, the test was rated "A," and if one or more silicon chips with film adhesive could not be successfully picked up, the test was rated "B." The results are shown in Table 1.

[0365] <Measurement of T-peel strength between intermediate layer and film adhesive> The release film was removed from the sheet for manufacturing a semiconductor device obtained above. The entire exposed surface of the film-like adhesive in the semiconductor device manufacturing sheet was then bonded to the adhesive surface of an adhesive tape having a polyethylene terephthalate layer ("PET50(A) PL Thin 8LK" manufactured by Lintec Corporation), and the resulting laminate was cut into a size of 50 mm x 100 mm to prepare a test piece. In accordance with JIS K6854-3, the laminate of the substrate, pressure-sensitive adhesive layer, and intermediate layer (i.e., the laminate sheet) was peeled away from the laminate of the film-like adhesive and pressure-sensitive adhesive tape, resulting in a T-shaped peel of the test piece. The maximum peel force (mN / 50 mm) measured at this time was taken as the T-peel strength. The peel speed was 50 mm / min. The results are shown in Table 1.

[0366] <<Production and Evaluation of Sheets for Semiconductor Device Manufacturing (1) Continued>> [Reference example 2] A sheet for manufacturing a semiconductor device was produced and evaluated in the same manner as in Reference Example 1, except that the coating amount of the composition for forming an intermediate layer was increased and the thickness of the intermediate layer was changed from 20 μm to 80 μm. The results are shown in Table 1.

[0367] [Reference example 3] A sheet for manufacturing semiconductor device was produced and evaluated in the same manner as in Reference Example 1, except that the siloxane compound was not added when preparing the composition for forming an intermediate layer, and the amount of the ethylene-vinyl acetate copolymer used was changed from 15 g to 16.5 g (in other words, the siloxane compound was replaced with the same mass of the ethylene-vinyl acetate copolymer, and only the ethylene-vinyl acetate copolymer was dissolved in tetrahydrofuran). The results are shown in Table 1. In Table 1, a "-" in the column for additives means that the additive was not used.

[0368] [Comparative Example 1] A sheet for manufacturing a semiconductor device was manufactured and evaluated in the same manner as in Reference Example 1, except that when preparing the composition for forming an intermediate layer, the same mass of ethylene-vinyl acetate copolymer (EVA, weight average molecular weight 200,000, content of structural units derived from vinyl acetate 25% by mass) was used instead of the ethylene-vinyl acetate copolymer, and the coating amount of the composition for forming an intermediate layer was increased to change the thickness of the intermediate layer from 20 μm to 80 μm. The results are shown in Table 1.

[0369] Comparative Example 2 A sheet for manufacturing a semiconductor device was manufactured and evaluated in the same manner as in Reference Example 1, except that the ethylene-vinyl acetate copolymer was replaced with the same mass of ethylene-vinyl acetate copolymer (EVA, weight-average molecular weight 200,000, content of structural units derived from vinyl acetate 25% by mass) when preparing the composition for forming an intermediate layer. The results are shown in Table 1.

[0370] [Table 1]

[0371] As is clear from the above results, in Reference Examples 1 to 3, the generation of cutting chips was suppressed during blade dicing, and poor cutting of the film-like adhesive was suppressed during expansion, demonstrating excellent suitability for dividing silicon wafers. In Reference Examples 1 to 3, the weight average molecular weight of the ethylene vinyl acetate copolymer contained as the main component in the intermediate layer in the sheet for manufacturing semiconductor device was 30,000.

[0372] In Reference Examples 1 to 3, the content of the ethylene vinyl acetate copolymer in the intermediate layer relative to the total mass of the intermediate layer was 90.9 mass% or more, and the content of the siloxane compound relative to the total mass of the intermediate layer was 9.1 mass% or less.

[0373] Furthermore, in Reference Examples 1 and 2, the pick-up properties of the silicon chips with the film-like adhesive after expansion were also excellent. In Reference Examples 1 and 2, the T-peel strength between the intermediate layer and the film-like adhesive was 100 mN / 50 mm or less, which was moderately low, and the silicon concentration in the intermediate layer was 9%, which was moderately high. These evaluation results were consistent with the evaluation results of the pick-up properties of the silicon chips with the film-like adhesive described above. In Reference Example 3, the intermediate layer in the sheet for manufacturing semiconductor device did not contain the siloxane compound.

[0374] The only difference between the semiconductor device manufacturing sheets of Reference Examples 1 and 2 is the thickness of the intermediate layer, but the semiconductor device manufacturing sheet of Reference Example 2 had a lower T-peel strength between the intermediate layer and the film-like adhesive than the semiconductor device manufacturing sheet of Reference Example 1, and it was easier to pick up a silicon chip with the film-like adhesive in Reference Example 2 than in Reference Example 1. This is presumably because, even though the proportion (mass%) of the siloxane compound content in the intermediate layer relative to the total mass of the intermediate layer is the same in the semiconductor device manufacturing sheets of Reference Examples 1 and 2, the content (parts by mass) of the siloxane compound in the intermediate layer is higher in Reference Example 2 than in Reference Example 1, and furthermore, since the siloxane compound tends to be unevenly distributed on both sides of the intermediate layer and in the areas nearby, the amount of siloxane compound unevenly distributed on both sides of the intermediate layer and in the areas nearby is also greater in Reference Example 2 than in Reference Example 1.

[0375] In Reference Examples 1 to 3, no nitrogen was detected in the XPS analysis of the exposed surface of the intermediate layer.

[0376] In contrast to this, in Comparative Examples 1 and 2, the generation of cutting waste was not suppressed during blade dicing, and the suitability for dividing the silicon wafer was poor. In Comparative Examples 1 and 2, the weight average molecular weight of the ethylene vinyl acetate copolymer contained as the main component in the intermediate layer of the sheet for manufacturing semiconductor device was 200,000.

[0377] The only difference between the semiconductor device manufacturing sheets of Comparative Examples 1 and 2 was the thickness of the intermediate layer, and the relationship between the T-peel strength of the intermediate layer and the film-like adhesive in Comparative Examples 1 and 2 showed the same tendency as in Reference Examples 1 and 2. In Comparative Examples 1 and 2, nitrogen was not detected in the exposed surface of the intermediate layer during XPS analysis.

[0378] [Example 1] <<Production and Evaluation of Sheets for Semiconductor Device Manufacturing (2)>> <Production of semiconductor device manufacturing sheets> A substrate was produced in the same manner as in Reference Example 1. One surface of the substrate had a maximum cross-sectional height Rt of 1500 nm and a surface roughness Ra of 140 nm (this surface is sometimes referred to as a smooth surface). The other surface had a maximum cross-sectional height Rt of 6000 nm and a surface roughness Ra of 600 nm (this surface is sometimes referred to as the rough surface). Furthermore, carbon black (0.5 parts by mass) was added as a color pigment to the adhesive composition, and the coating amount of the adhesive composition was increased, and the thickness of the adhesive layer was changed from 10 μm to 20 μm. Furthermore, when preparing the composition for forming the intermediate layer, an ethylene-vinyl acetate copolymer (EVA, weight-average molecular weight 30,000, content of structural units derived from vinyl acetate 25% by mass) was used instead of an ethylene-vinyl acetate copolymer (EVA, weight-average molecular weight 30,000, content of structural units derived from vinyl acetate 20% by mass). The exposed surface of the adhesive layer obtained above, opposite the side with the release film, was bonded to one rough surface of the substrate obtained above to produce a first intermediate laminate with a release film (in other words, a support sheet with a release film). Aside from the above points, a sheet for manufacturing a semiconductor device was produced in the same manner as in Reference Example 1.

[0379] As a result of the above, a sheet for manufacturing a semiconductor device with a release film was obtained, which was composed of a substrate (thickness 110 μm), an adhesive layer (thickness 20 μm), an intermediate layer (thickness 20 μm), a film-like adhesive (thickness 7 μm), and a release film laminated in this order in the thickness direction. The obtained sheet for manufacturing semiconductor device of Example 1 had a smooth surface on the surface of the substrate opposite to the side on which the pressure-sensitive adhesive layer was provided.

[0380] <Measurement of total light transmittance and haze of support sheet> The release film was removed from the first intermediate laminate obtained above to obtain a support sheet consisting of the substrate and the pressure-sensitive adhesive layer. The total light transmittance (%) of the obtained support sheet was measured using a haze meter (NDH7000, manufactured by Nippon Denshoku Industries Co., Ltd.) in accordance with JIS K7361-1:1997, and the haze value (%) was measured in accordance with JIS K7136:2000. The results are shown in Table 2.

[0381] <Measurement of maximum cross-sectional height Rt and arithmetic mean roughness Ra of the back surface of the substrate> In the semiconductor device manufacturing sheet obtained above, the maximum cross-sectional height Rt and the arithmetic mean roughness Ra were measured on the surface of the substrate opposite to the surface provided with the pressure-sensitive adhesive layer (the back surface of the substrate). The maximum cross-sectional height Rt was measured in accordance with JIS B 0601:2013 (ISO 4287:1997, Amd.1:2009). The arithmetic mean roughness Ra was measured in accordance with JIS B0601:2001. The results are shown in Table 2.

[0382] <Evaluation of recognition of the periphery of the non-laminated area of ​​the adhesive layer> In the semiconductor device manufacturing sheet obtained above, the maximum width (i.e., diameter) of the intermediate layer and the maximum width (i.e., diameter) of the film-like adhesive were both smaller than the maximum width of the pressure-sensitive adhesive layer and the maximum width of the base material. Whether or not the peripheral edge of the area of ​​the pressure-sensitive adhesive layer where the intermediate layer and the film-like adhesive were not laminated (non-laminated area) could be recognized using a tape mounter was evaluated according to the following procedure.

[0383] First, the release film was removed from the sheet for manufacturing a semiconductor device obtained above. A silicon wafer (diameter 300 mm, thickness 75 μm) whose back surface was dry polished was prepared.

[0384] Using a tape mounter ("Adwill RAD2700" manufactured by Lintec Corporation), the sheet for manufacturing semiconductor device was heated to 60°C and evaluated for its ability to be attached to the backside (polished surface) of a silicon wafer with the film adhesive according to the following evaluation criteria. The results are shown in Table 2.

[0385] (Evaluation criteria) A: The peripheral edge of the non-laminated area of ​​the adhesive layer could be recognized, and the sheet for manufacturing semiconductor device could be attached to the silicon wafer. B: The peripheral edge of the non-laminated area of ​​the adhesive layer could not be recognized, and the sheet for manufacturing semiconductor device could not be attached to the silicon wafer.

[0386] <Evaluation of kerf retention during cool expansion> [Manufacturing silicon chips with film adhesive] First, a dicing device (DISCO Corporation, "DFD6361") was used to blade-dic a silicon wafer (300 mm in diameter, 775 μm in thickness) from one surface on which a circuit was formed, thereby cutting the silicon wafer in half. The dicing was performed using a blade ("ZH05-SD2000-N1-90" manufactured by Disco Corporation) with a blade rotation speed of 50,000 rpm, a blade movement speed of 25 mm / sec, and a cutting depth of 75 μm.

[0387] Next, a backgrind tape ("Adwill E-3100TN" manufactured by Lintec Corporation) was attached to the surface of the silicon wafer (i.e., the circuit-formed surface).

[0388] Next, a backgrinding device (DISCO "DGP8761") was used to grind the other side of the silicon wafer (the side not covered with the backgrinding tape) to reduce the thickness of the silicon wafer to 30 μm, and the silicon wafer was divided into multiple silicon chips measuring 3 mm × 3 mm. This resulted in a group of silicon chips in which multiple silicon chips were aligned and fixed on the backgrinding tape.

[0389] Next, the release film was removed from the sheet for manufacturing a semiconductor device obtained above. Using a tape mounter ("Adwill RAD2700" manufactured by Lintec Corporation), the sheet for manufacturing semiconductor device was attached with the film adhesive to the side of the silicon chip group with backgrind tape obtained above, where the backgrind tape was not attached, while heating to 60° C. This resulted in a silicon chip group with a film adhesive, which was constructed by stacking the substrate, pressure-sensitive adhesive layer, intermediate layer, film adhesive, and silicon chip group in this order in the thickness direction.

[0390] Next, the area of ​​the first surface of the adhesive layer in the semiconductor device manufacturing sheet after it had been attached to the group of silicon chips, near the periphery where no intermediate layer was provided (the non-laminated area), was fixed to a ring frame for wafer dicing.

[0391] Next, the backgrind tape was removed from the group of silicon chips with the film adhesive attached.

[0392] Next, an expanding step was carried out as follows using a fully automatic die separator ("DDS2300" manufactured by Disco Corporation). First, the surface of the substrate opposite to the adhesive layer of the group of silicon chips with a film-like adhesive (the back surface of the substrate) was brought into contact with the suction table and the push-up member. Then, the back surface of the substrate was sucked by the suction table. While the sheet for manufacturing a semiconductor device was cooled in an environment of 0° C., it was expanded in a direction parallel to the surface, and the film adhesive was cut along the periphery of the silicon chip. At this time, the peripheral edge of the semiconductor device manufacturing sheet was fixed, and the back surface of the substrate was held by suction with a suction table, while the entire region of the semiconductor device manufacturing sheet where the intermediate layer and film-like adhesive were laminated was pushed up from the substrate side using the suction table and push-up member, thereby expanding the sheet at an expansion speed of 100 mm / sec and an expansion amount of 10 mm. Next, the suction table and the push-up member were lowered to release the expanded state.

[0393] This resulted in a group of silicon chips with film-like adhesive, in which multiple silicon chips with film-like adhesive, each comprising a silicon chip and a film-like adhesive after cutting applied to the other surface (ground surface) of the silicon chip, were aligned and fixed on the intermediate layer. Next, the semiconductor device manufacturing sheet was released from the suction and expanded state where it was suctioned to the suction table.

[0394] Next, the peripheral portion of the laminated sheet on which the silicon chip with the film adhesive was not placed was heated.

[0395] [Evaluation of kerf retention] Next, the kerf retention was evaluated by the following method. In other words, assuming that the film adhesive is cut normally by expanding the semiconductor device manufacturing sheet, the group of silicon chips with film adhesive after expansion will have a mesh-like pattern of kerfs, consisting of multiple kerfs extending in the MD of the intermediate layer and multiple kerfs extending in the TD of the intermediate layer. Among the intersections (in other words, orthogonal locations) between the kerfs extending in the MD of the intermediate layer and the kerfs extending in the TD of the intermediate layer, the central intersection (sometimes referred to herein as the "first intersection") corresponds to approximately the center of the silicon wafer before division, two intersections (sometimes referred to herein as the "second intersection" and "fourth intersection", respectively) that are closest to the outer periphery of the silicon wafer before division and are located at the same position as the central intersection (first intersection) in the TD of the intermediate layer, and two intersections (sometimes referred to herein as the "third intersection" and "fifth intersection", respectively) that are closest to the outer periphery of the silicon wafer before division and are located at the same position as the central intersection (first intersection) in the MD of the intermediate layer. The kerf widths in the MD and TD of the intermediate layer were measured from above the silicon chip side of the group of silicon chips with film-like adhesive using a digital microscope (Keyence Corporation, "VH-Z100"). That is, for each crossing portion, two kerf width measurements were taken, one in the MD and one in the TD, for a total of 10 kerf width measurements for the five crossing portions.

[0396] FIG. 7 shows the measurement points of the kerf width. In FIG. 7, reference numeral 7 denotes a silicon chip, reference numeral 79a denotes a kerf extending in the MD of the intermediate layer, and reference numeral 79b denotes a kerf extending in the TD of the intermediate layer. When the semiconductor device manufacturing sheet used is the one shown in FIG. 1, the first surface 13a of the intermediate layer 13 is exposed in these kerfs 79a and 79b. Then, reference numeral W a1 , W a2 , W a3 , W a4 and W a5 indicates the width of the kerf extending in the MD of the intermediate layer (in other words, the kerf width in the TD at the intersection), and the symbol Wb1 , W b2 , W b3 , W b4 and W b5 Each of the values ​​indicates the width of the kerf extending in the TD of the intermediate layer (in other words, the kerf width in the MD at the intersection). a1 and W b1 The intersection where the kerf width W is measured is the first intersection. a2 and W b2 The intersection where the kerf width W is measured is the second intersection. a4 and W b4 The intersection where the kerf width W is measured is the fourth intersection. a3 and W b3 The intersection where the kerf width W is measured is the third intersection. a5 and W b5 The crossing site where the above is measured is the fifth crossing site. 7 is a plan view showing a schematic diagram of a group of silicon chips with a film adhesive to explain the measurement points of the kerf width, and shows a case where the kerf width is constant everywhere, but this is merely an example. Even in the same group of silicon chips with a film adhesive, the kerf width can vary depending on the position of the kerf, and the kerf width can also vary between examples and comparative examples, even for kerfs at the same position in the group of silicon chips with a film adhesive.

[0397] The kerf retention was evaluated based on the measured values ​​of the 10 kerf widths in accordance with the following evaluation criteria. The results are shown in Table 2. (Evaluation criteria) A: All kerf width measurements are 10 μm or greater. B: One or more kerf width measurements are less than 10 μm.

[0398] <Evaluation of pick-up ability of silicon chips with film adhesive after expansion> After the evaluation of kerf retention during the cool expansion process, the group of silicon chips with film adhesive was then used with a die bonding machine (Fasford Technology's "PU100") under the following conditions: a push-up height of 250 μm, a push-up speed of 5 mm / s, a push-up time of 500 ms, an expansion distance of 4 mm, and a push-up method of 1 pin. While the backside of the substrate was suctioned with the suction table, the support sheet was pushed up with the suction table and the push-up member, and the silicon chips with film adhesive were picked up from the intermediate layer of the laminated sheet. If all silicon chips with film adhesive were successfully picked up, the test was evaluated as "A." If one or more silicon chips with film adhesive were not successfully picked up, the test was evaluated as "B." The results are shown in Table 2.

[0399] The silicon chip with the film adhesive was then die-bonded to the circuit-forming surface of the substrate using the film adhesive. Another semiconductor chip was then stacked on top of the semiconductor chip, wire-bonded, and the whole was then sealed with resin. Thus, the desired semiconductor device was manufactured.

[0400] <<Production and evaluation of sheets for manufacturing semiconductor devices>> [Example 2] A sheet for manufacturing semiconductor device was produced and evaluated in the same manner as in Example 1, except that when the adhesive composition was prepared, no color pigment was added, and instead, fine particles ("Tospearl 120", average particle size: 2.0 μm, refractive index: 1.43) (1.5 parts by mass) made of a silicon-containing compound were added as a filler. The results are shown in Table 2.

[0401] [Example 3] Except for the fact that no color pigment was added when the pressure-sensitive adhesive composition was prepared, a sheet for producing a semiconductor device was produced and evaluated in the same manner as in Example 1. The results are shown in Table 2.

[0402] [Reference example 4] During the production of the semiconductor device manufacturing sheet, the exposed surface of the adhesive layer opposite to the side having the release film was bonded to the smooth surface of the substrate obtained above to obtain a first intermediate laminate with a release film. The obtained semiconductor device manufacturing sheet of Reference Example 4 had a rough surface on the surface of the substrate opposite to the side having the adhesive layer. Except for the above points, a sheet for manufacturing a semiconductor device was produced and evaluated in the same manner as in Example 1. The results are shown in Table 2.

[0403] [Reference example 5] The silicon wafer was cut in half in the same manner as in Example 1, except that the blade dicing settings were changed so that the size of the silicon chip group obtained from the silicon wafer was 4 mm x 4 mm. Furthermore, during the production of the semiconductor device manufacturing sheet, the exposed surface of the pressure-sensitive adhesive layer opposite to the side with the release film was bonded to the smooth surface of the substrate obtained above to obtain a first intermediate laminate with a release film. Except for the above points, the semiconductor device manufacturing sheet was produced in the same manner as in Example 1. Except for the above points, a sheet for manufacturing a semiconductor device was produced and evaluated in the same manner as in Example 1. The results are shown in Table 2.

[0404] [Table 2]

[0405] In Examples 1 and 2 and Reference Examples 4 and 5, the adhesive layer contained a coloring pigment or a filler, and therefore the haze of the support sheet consisting of the substrate and the adhesive layer was 10 or more, or the total light transmittance of the support sheet was 70% or less. As a result, in Examples 1 and 2 and Reference Examples 4 and 5, the tape mounter was able to recognize the non-laminated area of ​​the adhesive layer and attach the sheet for manufacturing semiconductor device to the silicon wafer.

[0406] In Example 3, the adhesive layer did not contain a color pigment, so the tape mounter was unable to recognize the non-laminated area of ​​the adhesive layer. Therefore, the device was set to a semi-automatic state, the application position was manually confirmed, the sheet for manufacturing semiconductor device was applied to the silicon wafer, and then the kerf retention was evaluated.

[0407] In Examples 1 to 3, the maximum cross-sectional height of the back surface of the substrate was 2000 nm or less, and the surface roughness of the back surface of the substrate was 200 nm or less. As a result, in Examples 1 to 3, the kerf retention was sufficient. This result is thought to be due to the fact that during expansion, the release of suction between the back surface of the substrate and the suction table was prevented, and the peripheral portion of the laminated sheet on which the group of silicon chips with film-like adhesive was not placed was heated and fixed.

[0408] In contrast to this, in Reference Example 4, the maximum cross-sectional height of the back surface of the substrate was more than 2000 nm, and the surface roughness of the back surface of the substrate was more than 200. Therefore, in Reference Example 4, in which the size of the silicon chip group was 3 mm×3 mm, the kerf retention was insufficient. This result is thought to be due to the fact that the suction between the back surface of the substrate and the suction table was released during the expanding process, preventing the peripheral portion from being heated promptly.

[0409] In contrast to this, in Reference Example 5, the maximum cross-sectional height of the back surface of the substrate exceeded 2000 nm, and the surface roughness of the back surface of the substrate exceeded 200 nm. In Reference Example 5, in which the size of the silicon chip group was 4 mm x 4 mm, the kerf retention was sufficient. The size of the silicon chip group in Reference Example 5 is larger than that of the silicon chip group in Reference Example 4, so the ratio of the area of ​​the gap between adjacent semiconductor chips to the total area of ​​the semiconductor device manufacturing sheet is smaller. As a result, it is presumed that the release of suction between the back surface of the substrate and the suction table during expansion can be suppressed, and the peripheral portion can be heated and fixed.

[0410] When the sheets for manufacturing semiconductor device of Examples 1 to 3 and Reference Example 5 were used, the suction between the back surface of the base material and the suction table was not released in the above-mentioned pick-up step. In contrast to this, when the sheet for manufacturing semiconductor device of Reference Example 4 was used, the suction between the back surface of the base material and the suction table was released in the above-mentioned pick-up step. In Reference Example 5, the maximum cross-sectional height of the back surface of the substrate exceeded 2000 nm, and the surface roughness of the back surface of the substrate exceeded 200 nm, but since the size of the silicon chip group was 4 mm x 4 mm, the adsorption between the back surface of the substrate and the adsorption table was not released. [Industrial Applicability]

[0411] The present invention can be used in the manufacture of semiconductor devices. [Explanation of symbols]

[0412] 101: Sheet for manufacturing semiconductor device; 11: Base material; 12: Pressure-sensitive adhesive layer; 13: Intermediate layer; 13a: First surface of intermediate layer; 14: Film-like adhesive

Claims

1. The adhesive tape comprises a substrate, a pressure-sensitive adhesive layer, an intermediate layer, and a film-like adhesive, the pressure-sensitive adhesive layer, the intermediate layer, and the film-like adhesive are laminated in this order on the substrate, the intermediate layer contains, as a main component, a non-silicon-based resin having a weight average molecular weight of 100,000 or less, the maximum cross-sectional height of the surface of the substrate opposite to the side having the pressure-sensitive adhesive layer is 2000 nm or less; The sheet for manufacturing semiconductor device, wherein the surface of the substrate opposite to the side having the pressure-sensitive adhesive layer has a surface roughness of 200 nm or less.

2. The haze of the support sheet consisting of the substrate and the pressure-sensitive adhesive layer is 10 or more, or 2. The sheet for manufacturing a semiconductor device according to claim 1, wherein the support sheet has a total light transmittance of 70% or less.

3. A sheet for manufacturing a semiconductor device, the sheet for manufacturing a semiconductor device is used to manufacture a semiconductor chip with a film-like adhesive by a method for manufacturing a semiconductor chip with a film-like adhesive, The manufacturing method includes: a step of forming a laminate by attaching the semiconductor device manufacturing sheet to a back surface of a semiconductor chip; a step of, at a temperature of 0°C or less, sucking the surface of the substrate opposite to the side having the adhesive layer with a suction table, pushing up the entire region of the semiconductor device manufacturing sheet where the intermediate layer and the film-like adhesive are laminated from the substrate side with the suction table and a push-up member, expanding and cutting the film-like adhesive, and obtaining a group of semiconductor chips with a film-like adhesive in a state where a plurality of semiconductor chips with the film-like adhesive are aligned on the intermediate layer; and heating a peripheral portion of the expanded sheet for manufacturing a semiconductor device on which the semiconductor chip with the film adhesive is not placed, The area of ​​the semiconductor chip is 9 mm ２ 3. The sheet for manufacturing a semiconductor device according to claim 1 or 2, wherein:

4. 4. The sheet for manufacturing a semiconductor device according to claim 1, wherein the pressure-sensitive adhesive layer contains at least one material selected from the group consisting of a colorant and a filler.

5. a step of forming a laminate by attaching the semiconductor device manufacturing sheet according to any one of claims 1 to 4 to the back surface of a semiconductor chip; a step of pushing up the entire region of the semiconductor device manufacturing sheet where the intermediate layer and the film-like adhesive are laminated from the substrate side using a suction table while sucking the surface of the substrate opposite to the side where the pressure-sensitive adhesive layer is provided at a temperature of 0°C or less using the suction table and a push-up member, expanding and cutting the film-like adhesive, thereby obtaining a group of semiconductor chips with a film-like adhesive in a state where a plurality of semiconductor chips with a film-like adhesive are aligned on the intermediate layer; A method for manufacturing a semiconductor chip with a semiconductor device manufacturing sheet, comprising a step of heating the peripheral portion of the expanded semiconductor device manufacturing sheet on which the semiconductor chip with film-like adhesive is not placed.

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