Sputtering Equipment

Abstract

To suppress the occurrence of a blurred area around a non-erosion area to reduce the cause of particle generation.SOLUTION: In a sputtering apparatus, a cathode unit for emitting sputtered particles toward the formation area of a substrate to be deposited includes: a target having an erosion area; a magnet unit for forming the erosion area in the target; and a magnet unit scanning part relatively reciprocated in a rocking area specifying the magnet unit and the substrate to be deposited between one rocking end and the other rocking end in a rocking direction (a scanning direction). The magnet unit includes: a magnet having the longitudinal direction extending in a rocking width direction intersecting the rocking direction along the target surface; and an anode potential setting mechanism for setting an anode to a predetermined potential to the cathode unit not so as to inject electrons into the anode.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present invention relates to a sputtering apparatus, and more particularly to a technique suitable for use in film deposition using a magnetron cathode. [Background technology]

[0002] In a film forming apparatus having a magnetron cathode, a method of moving the magnet relative to the target is known for the purpose of improving the utilization efficiency of the target. As in the technique disclosed in Patent Document 1, it is also known to oscillate the cathode and target relative to the substrate on which the film is to be formed, in addition to moving the magnet, for the purpose of improving the uniformity of the film formation.

[0003] Furthermore, as in the technique disclosed in Patent Document 2, it is known to oscillate the magnet and the cathode for the purpose of preventing generated particles from adversely affecting film formation in the sputtering chamber. Furthermore, the present applicants have disclosed a technique such as that disclosed in Patent Document 3 as a technique for oscillating a substrate on which a film is to be formed relative to a magnet and a cathode. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Japanese Patent Application Laid-Open No. 2009-41115 [Patent Document 2] Japanese Patent Application Laid-Open No. 2012-158835 [Patent Document 3] Patent No. 6579726 Summary of the Invention [Problem to be solved by the invention]

[0005] However, even with the technology of scanning (oscillating) the magnet relative to the target as described above, the occurrence of non-erosion areas can cause particles to be generated near the periphery of the film formation area close to the edge of the magnet's oscillation range, and there has been a demand to eliminate this problem. In particular, it has been found that, rather than the occurrence of non-erosion areas themselves, the blurring of the boundary between the non-erosion area and the erosion area can cause problematic particle generation, such as re-sputtering of the redeposited film (the sputtered film deposited on the target).

[0006] Furthermore, even with the technology of scanning (oscillating) a magnet relative to the target as described above, problems remain, such as a decrease in film thickness and unevenness in film thickness and film quality distribution near the periphery of the film-forming area close to the magnet's oscillation range due to the generation of non-erosion areas. Furthermore, as substrates become larger, there is a growing demand for improvements to address these problems.

[0007] The present invention has been made in view of the above circumstances, and aims to achieve the following objects. 1. Reduce the occurrence of blurred areas around non-erosion areas, thereby reducing the source of particle generation. 2. To stabilize the distribution of the formed plasma and improve the uniformity of the film thickness distribution and film thickness characteristic distribution regardless of the magnet swing position. [Means for solving the problem]

[0008] As a result of extensive research, the inventors of the present invention have succeeded in suppressing particle generation in the non-erosion region, and in suppressing variations in film thickness distribution and film quality characteristic distribution.

[0009] During sputtering, a magnetic field (magnetic field, magnetic lines of force) is generated from the magnet due to the power applied to the cathode. At this time, the plasma or electrons that contribute to sputtering move along the magnetic lines of force generated by the magnet. Of the magnetic lines of force generated by the magnet, those that contribute to plasma generation run from the north pole of the magnet, which is placed flush with the target and parallel to it, toward the south pole in an arc shape toward the target. At this time, the magnetic lines of force generated by the magnet penetrate the target in the thickness direction from the back side to the front side, form an arc shape in the plasma generation space, penetrate the target in the thickness direction from the front side to the back side, and return to the south pole.

[0010] An anode, which is a part at ground potential, is placed around the edge of the target. When the magnet is scanned (oscillated) in this state and positioned near the end of the oscillation, the magnet is positioned close to this anode. This can cause the magnetic field lines from the north pole to move toward the anode, or the ground potential area, which is close to the end of the magnet's oscillation, and not return to the south pole. As a result, the electrons are tracked (moved) along the magnetic field lines, and do not return to the plasma generation space, but instead flow toward the anode, or the ground potential area, without contributing to plasma generation. This is called electron absorption.

[0011] When electrons are absorbed by the anode, the electron density on the surface side of the target, i.e., in the plasma generation space, decreases. This can result in a phenomenon in which the density of the plasma formed decreases or plasma does not generate at all. This is called plasma absorption. When this phenomenon occurs, the target is not sputtered by the plasma, resulting in the creation of a non-erosion region, which may then become larger.

[0012] When electrons are absorbed by the anode, the plasma near the anode turns on and off due to the oscillation of the magnet and other factors. This causes the plasma to turn on and off during sputtering. This increases the possibility of particles being generated due to the sputtering of the redeposition film.

[0013] In other words, the occurrence of non-erosion regions may cause particles to be generated near the periphery of the film-forming region, which is close to the swing range of the magnet. At this time, the boundary between the non-erosion region and the erosion region becomes unclear, resulting in the formation of an erosion-non-erosion boundary region.

[0014] Thus, it was found that rather than the occurrence of the non-erosion region itself, it is the blurring of the boundary between the non-erosion region and the erosion region that causes problematic particle generation, such as re-sputtering of the redeposited film.

[0015] As described above, when electrons are attracted to the anode, the magnetic field lines from the magnet are directed toward the anode, that is, they are inclined outward from the target contour rather than in the thickness direction of the target.

[0016] To solve this problem, the inventors of the present invention discovered that by controlling the potential of the anode relative to the cathode, it is possible to prevent plasma from being turned on and off near the anode even when the magnetic field lines formed by the magnet at the swing end of the magnet are attracted to the anode, that is, to prevent the phenomenon of a decrease in the density of the plasma formed or no plasma being generated. In other words, they discovered that changing the potential of the anode from ground potential is effective in reducing the non-erosion region.

[0017] In the above explanation, the magnetic field lines are shown as reaching from the north pole to the south pole in accordance with the usual notation, but the phenomenon can be understood without any problems even if the polarity is reversed.

[0018] Furthermore, when a non-erosion region is formed, plasma generation is suppressed. As a result, the applied power is not consumed for plasma generation and remains surplus. This surplus power is redistributed to regions other than the original non-erosion region, or is absorbed as a result of overall voltage (power) fluctuations. This causes fluctuations in the plasma generation conditions, similar to voltage fluctuations, which ultimately leads to variations in film thickness distribution and film quality characteristic distribution.

[0019] In other words, when electrons are absorbed by the anode and the plasma is turned on and off, the occurrence of non-erosion regions causes further fluctuations in the plasma generation conditions, further increasing the variations in film thickness distribution and film quality characteristic distribution.

[0020] Furthermore, when a non-erosion region has already occurred, a local change in the plasma generation conditions due to voltage fluctuations or the like can cause a non-erosion region different from the original non-erosion region to occur, which increases particle generation and variations in film thickness and film quality distribution.

[0021] Therefore, in order to solve this problem, the inventors of the present invention have discovered that by controlling the potential of the anode relative to the cathode, it is possible to prevent the on / off of plasma near the anode even when the magnetic field lines formed by the magnet at the swing end of the magnet are attracted to the anode, that is, to prevent the phenomenon of a decrease in the density of the plasma formed or no plasma being generated. In other words, they have discovered that changing the potential of the anode from ground potential is effective in suppressing variations in film thickness distribution and film quality characteristic distribution.

[0022] In view of these, the inventors of the present invention have completed the present invention as follows.

[0023] (1) A sputtering apparatus according to one aspect of the present invention comprises: a cathode unit corresponding to the anode in the vacuum chamber, which emits sputtered particles toward a deposition region of the substrate; a target on which an erosion region is formed; a magnet unit disposed on the opposite side of the target from the deposition substrate, the magnet unit forming the erosion region on the target; a magnet unit scanning unit capable of relatively reciprocating the magnet unit and the film formation substrate in a swing region defined between one swing end and the other swing end in a swing direction (scanning direction) along the target surface; an insulating support portion that supports the anode; and the anode is disposed around the target so that its position in the thickness direction of the target coincides with that of the target; a peripheral location spaced from the target is electrically insulated and connected to a wall of the vacuum chamber; The magnet unit has a magnet whose longitudinal direction extends along the surface of the substrate in a swing width direction that intersects with the swing direction, and an anode potential setting mechanism connected to the anode; The anode potential setting mechanism is configured such that the magnet unit forms magnetic lines of force that penetrate the target in the thickness direction from the back side to the front side and return from the front side to the back side, and the magnetic lines of force The aforementioned The anode is set to a negative potential or a floating potential relative to the cathode unit so that electrons tracked by the magnetic field lines do not enter the anode even when the anode is tilted toward the cathode unit. death, The insulating support part has a bolt, an insulating upper member, and an insulating lower member, and fixes the anode to the wall part of the vacuum chamber in an electrically insulated manner, and the insulating lower member and the insulating upper member sandwiched between the anode and the wall part prevent the bolt from coming into direct contact with the anode. , This solved the above problem. (2) The sputtering apparatus of the present invention comprises the steps of: The bolt passes through a through hole provided in the anode, The insulating upper member includes a cylindrical portion surrounding the bolt head of the bolt; The aforementioned a disk portion that is sandwiched at a friction position between the bolt head of the bolt and the enlarged diameter portion of the through hole, the insulating lower member is cylindrical, one end of which contacts the anode and the other end of which contacts the anode around the enlarged diameter portion; It is possible.

[0024] Book A sputtering apparatus according to one aspect of the present invention comprises: a cathode unit corresponding to the anode, which emits sputtered particles toward a deposition region of a substrate; a target on which an erosion region is formed; a magnet unit disposed on the opposite side of the target from the deposition substrate, the magnet unit forming the erosion region on the target; a magnet unit scanning unit capable of relatively reciprocating the magnet unit and the film formation substrate in a swing region defined between one swing end and the other swing end in a swing direction (scanning direction) along the target surface; and The magnet unit has a magnet whose longitudinal direction extends along the surface of the substrate in a swing width direction that intersects with the swing direction, and an anode potential setting mechanism connected to the anode and configured to set the anode at a predetermined potential relative to the cathode unit so that electrons are not incident on the anode; thing can .

[0025] According to the above configuration, by controlling the potential of the anode relative to the cathode, it is possible to prevent plasma from being turned on and off near the anode even when the magnetic field lines formed by the magnet at the swing end of the magnet are attracted to the anode. In other words, by controlling the potential of the anode relative to the cathode, it is possible to prevent the phenomenon of a decrease in the density of the generated plasma or no plasma being generated. Alternatively, by controlling the potential of the anode relative to the cathode so that the anode is not at ground potential, even if tracked electrons head toward the anode, the electrons are not absorbed by the anode and the plasma is not extinguished. In other words, by changing the potential of the anode from the ground potential, the erosion-non-erosion boundary region can be effectively reduced, thereby reducing the generation of particles caused by the formation of the erosion-non-erosion boundary region. At the same time, further fluctuations in the supply voltage are suppressed, which suppresses fluctuations in plasma density due to the magnet's swing end position, stabilizes the plasma generation state, and effectively suppresses variations in film thickness distribution and film quality characteristic distribution.

[0026] Book The sputtering apparatus of the present invention is In the record Leave, The anode potential setting mechanism can set the anode to a potential different from ground potential.

[0027] According to the above configuration, by changing the potential of the anode relative to the cathode from ground potential, even if the magnetic field lines formed by the magnet at the swing end of the magnet are attracted to the anode and tracked electrons move toward the anode, the electrons are not attracted to the anode, and plasma on / off near the anode can be prevented. In other words, by changing the potential of the anode relative to the cathode from ground potential, it is possible to prevent the phenomenon of a decrease in the density of the generated plasma or no plasma being generated.

[0028] Book The sputtering apparatus of the present invention is In the record Leave, an insulating support for supporting the anode; It is possible.

[0029] According to the above configuration, the potential of the anode can be easily changed from ground potential relative to the cathode. Furthermore, by electrically isolating the anode from the chamber components located around the substrate, which are at ground potential, the potential of the anode can be easily set to a potential different from ground potential. This allows the potential of the anode to be changed from ground potential relative to the cathode. Even if the magnetic field lines formed by the magnet at the end of the magnet's oscillation are attracted to the anode and tracked electrons move toward the anode, the electrons are not attracted to the anode, preventing plasma from being turned on or off near the anode. In other words, changing the potential of the anode from ground potential relative to the cathode prevents the phenomenon of a decrease in the density of the generated plasma or the absence of plasma generation.

[0030] Book The sputtering apparatus of the present invention is Note And, the anode potential setting mechanism sets the anode to a negative potential relative to the cathode unit; It is possible.

[0031] According to the above configuration, by setting the potential of the anode to a negative potential relative to the cathode, even if the magnetic field lines formed by the magnet at the swing end of the magnet are attracted to the anode and tracked electrons move toward the anode, the electrons are not attracted to the anode, and plasma on / off near the anode can be prevented. In other words, by setting the potential of the anode to a negative potential relative to the cathode, it is possible to prevent the phenomenon of a decrease in the density of the plasma that is formed or no plasma being generated.

[0032] Book The sputtering apparatus of the present invention is Note And, the anode potential setting mechanism sets the anode to a floating potential relative to the cathode unit; It is possible.

[0033] According to the above configuration, by setting the potential of the anode to a floating potential relative to the cathode, even if the magnetic field lines formed by the magnet at the swing end of the magnet are attracted to the anode and tracked electrons move toward the anode, the electrons are not attracted to the anode, and plasma on / off near the anode can be prevented. In other words, by setting the potential of the anode to a floating potential relative to the cathode, it is possible to prevent the phenomenon of a decrease in the density of the generated plasma or no plasma being generated. [Effects of the Invention]

[0034] According to the present invention, it is possible to maintain plasma density, suppress the generation of blurred areas around non-erosion areas, reduce particles, and stabilize the distribution of the formed plasma, thereby improving the uniformity of the film thickness distribution and film thickness characteristic distribution regardless of the magnet swing position. [Brief explanation of the drawings]

[0035] [Figure 1] 1 is a schematic plan view showing a first embodiment of a sputtering apparatus according to the present invention. [Figure 2] 1 is a schematic side view showing a film formation chamber in a first embodiment of a sputtering apparatus according to the present invention. [Figure 3] 1 is a schematic diagram showing the positional relationship between a glass substrate and the configuration of a cathode device in a first embodiment of a sputtering device according to the present invention. [Figure 4] 1 is a front view showing the positional relationship between a glass substrate, a target, and a magnet unit in a first embodiment of a sputtering device according to the present invention. [Figure 5] 2 is an enlarged cross-sectional view showing an end portion of a magnet unit in the first embodiment of the sputtering apparatus according to the present invention. FIG. [Figure 6] 2 is an enlarged cross-sectional view showing an insulating support part in the first embodiment of the sputtering apparatus according to the present invention. FIG. [Figure 7] FIG. 2 is a diagram for explaining the operation of an anode potential setting mechanism in the first embodiment of the sputtering apparatus according to the present invention. [Figure 8] FIG. 2 is a diagram for explaining the operation of an anode potential setting mechanism in the first embodiment of the sputtering apparatus according to the present invention. [Figure 9] FIG. 10 is a diagram for explaining the operation of an anode potential setting mechanism in the second embodiment of the sputtering apparatus according to the present invention. [Figure 10] 10A and 10B are diagrams for explaining the operation of an anode potential setting mechanism in a second embodiment of the sputtering apparatus according to the present invention. [Figure 11] 10A and 10B are diagrams for explaining the operation of the sputtering apparatus when there is no anode potential setting mechanism. DETAILED DESCRIPTION OF THE INVENTION

[0036] A first embodiment of a sputtering apparatus according to the present invention will be described below with reference to the drawings. Fig. 1 is a schematic plan view showing a sputtering apparatus according to this embodiment. Fig. 2 is a schematic side view showing a film formation chamber in the sputtering apparatus according to this embodiment. In the figures, reference numeral 1 denotes the sputtering apparatus.

[0037] The sputtering apparatus 1 according to this embodiment is used, for example, in the manufacturing process of semiconductor devices or FPDs (flat panel displays) such as liquid crystal displays and organic EL displays, when forming TFTs (Thin Film Transistors) on substrates made of glass or the like. The sputtering apparatus 1 according to this embodiment is an inter-back type vacuum processing apparatus that performs heat treatment, film formation processing, etching processing, and the like on substrates made of glass or resin in a vacuum environment.

[0038] In this embodiment, a rectangular substrate with a side length of approximately 100 mm to 2500 mm or more can be used as the glass substrate (substrate to be deposited, transparent substrate) 11, and further, a substrate with a thickness of 1 mm or less, a substrate with a thickness of several mm, or a substrate with a thickness of 10 mm or more can also be used.

[0039] As shown in FIG. 1, the sputtering apparatus 1 according to this embodiment includes a load / unload chamber (vacuum chamber) 2, a film formation chamber (vacuum chamber) 4, and a transfer chamber (vacuum chamber) 3. The load / unload chamber 2 carries in / out a substantially rectangular glass substrate 11 (substrate to be processed) to / from the outside. The film formation chamber 4 is a pressure-resistant vacuum chamber in which a coating of, for example, a ZnO-based or In2O3-based transparent conductive film, a metal such as aluminum or silver, an oxide, or other film is formed on the glass substrate 11 by sputtering. The transfer chamber 3 is located between the film formation chamber 4 and the load / unload chamber 2, and transfers the glass substrate 11 between the film formation chamber 4 and the load / unload chamber 2 (vacuum chamber).

[0040] As shown in FIG. 1, the sputtering apparatus 1 according to this embodiment includes a load / unload chamber (vacuum chamber) 2, a film formation chamber (vacuum chamber) 4, and a transfer chamber (vacuum chamber) 3. The load / unload chamber 2 carries in / out a substantially rectangular glass substrate 11 (substrate to be processed) to / from the outside. The film formation chamber 4 is a pressure-resistant vacuum chamber in which a coating of, for example, a ZnO-based or In2O3-based transparent conductive film, a metal such as aluminum or silver, an oxide, or other film is formed on the glass substrate 11 by sputtering. The transfer chamber 3 is located between the film formation chamber 4 and the load / unload chamber 2, and transfers the glass substrate 11 between the film formation chamber 4 and the load / unload chamber 2 (vacuum chamber).

[0041] The sputtering apparatus 1 according to this embodiment can be configured as a side sputtering type apparatus, as shown in Fig. 1. Alternatively, the sputtering apparatus 1 according to this embodiment can be configured as a sputtering down type apparatus, as shown in Fig. 2. Furthermore, it can also be configured as a sputtering up type apparatus.

[0042] Furthermore, the sputtering apparatus 1 may be provided with a film formation chamber (vacuum chamber) 4A and a load / unload chamber (vacuum chamber) 2a. These multiple chambers, namely the load / unload chamber 2, the load / unload chamber 2a, the film formation chamber 4, and the film formation chamber 4A, are formed so as to surround the periphery of the transfer chamber 3. Such chambers are configured to have, for example, two load / unload chambers (vacuum chambers) formed adjacent to each other and multiple processing chambers (vacuum chambers).

[0043] For example, one of the load / unload chambers 2 is a load chamber for carrying the glass substrate 11 from the outside toward the inside of the sputtering apparatus 1 (vacuum processing apparatus), and the other load / unload chamber 2a is an unload chamber for carrying the glass substrate 11 from the inside of the sputtering apparatus 1 to the outside. Also, a configuration may be adopted in which the film formation chamber 4 and the film formation chamber 4A perform different film formation processes. Also, a configuration may be adopted in which the film formation chamber 4 and the film formation chamber 4A perform different types of sputtering processes. For example, one of the film formation chamber 4 and the film formation chamber 4A can be configured as a side sputtering type apparatus, and the other as a sputter-down type apparatus.

[0044] A gate valve (door valve) may be provided between the transfer chamber 3 and the load / unload chamber 2. Similarly, a gate valve (door valve) may be provided between the transfer chamber 3 and the load / unload chamber 2a. A gate valve (door valve) may be provided between the transfer chamber 3 and the film formation chamber 4. A gate valve (door valve) may be provided between the transfer chamber 3 and the film formation chamber 4A.

[0045] The load / unload chamber 2 may be provided with a positioning member that can set and align the placement position of the glass substrate 11 that is carried in from outside the sputtering apparatus 1. The load / unload chamber 2 is also provided with a roughing evacuation device (roughing evacuation means, low vacuum evacuation device) such as a rotary pump that roughly evacuates the interior of the chamber.

[0046] Inside the transfer chamber 3, a transfer device (transfer robot) 3a is disposed, as shown in FIG. The transfer device 3a includes a rotary shaft, a rotary drive device for rotating the rotary shaft, a robot arm attached to the rotary shaft, a robot hand formed at one end of the robot arm, and a vertical movement device for moving the robot hand up and down. The robot arm is composed of a first arm portion and a second arm portion that are orthogonal to each other and can slide horizontally. The transfer device 3a can move the glass substrate 11, which is the object to be transferred, between the load / unload chamber 2, the load / unload chamber 2a, the film formation chamber 4, the film formation chamber 4A, and the transfer chamber 3.

[0047] As shown in FIG. 1, the film formation chamber 4 is provided with a cathode device 10, a substrate holding section 13 serving as a substrate holder having a mask or the like, and a gas control section 14 having a gas introduction device (gas introduction means) and a high-vacuum exhaust device (high-vacuum exhaust means). 1, the interior of the film formation chamber 4 is composed of a front space 41 where the front surface of the glass substrate 11 is exposed during film formation, and a back space 42 located on the back side of the glass substrate 11 during film formation. The cathode device 10 is disposed in the front space 41.

[0048] The cathode device 10 is erected at a position farthest from a transfer port 4a connected to the transfer chamber 3 inside the side sputtering type film formation chamber 4 shown in FIG. 2, the cathode device 10 is disposed above the horizontally positioned glass substrate 11 transferred from the transfer opening 4a to the transfer chamber 3, and is arranged parallel to and facing the glass substrate 11. A mask 20 may be disposed around the film formation opening 4b.

[0049] 1 or 2, the substrate holding section (substrate holding mechanism) 13 is provided inside the rear space 42. The substrate holding section 13 is capable of supporting the glass substrate 11 carried in through the transfer opening 4a. 1, the substrate holding unit 13 holds the glass substrate 11 so that a target 23 (described later) faces a surface to be processed (film formation surface) 11a of the glass substrate 11 during film formation. During film formation, the substrate holding unit 13 holds the glass substrate 11 in a vertical position facing the cathode device 10 that is installed upright.

[0050] 2, the substrate holding unit 13 (substrate holding means) holds the glass substrate 11 so that a target 23 (described later) faces a surface to be processed (film formation surface) 11a of the glass substrate 11 during film formation. During film formation, the substrate holding unit 13 holds the glass substrate 11 in a horizontal position facing the cathode device 10 facing downward. The substrate holding part 13 may include, inside the side sputtering type film formation chamber 4 shown in Figure 1, a swing shaft extending approximately parallel to the transfer opening 4a and / or the film formation opening 4b at a lower position in the back space 42, and a holding part attached to the swing shaft and holding the back surface of the glass substrate 11.

[0051] A gas introduction device (gas introduction means) in the gas control unit 14 introduces gas into the film formation chamber 4. A high-vacuum exhaust device (high-vacuum exhaust means) in the gas control unit 14 is a turbo molecular pump or the like that draws a high vacuum inside the film formation chamber 4.

[0052] 1, the cathode device 10 is capable of swinging in a horizontal direction along the main surface of the glass substrate 11 relative to the glass substrate 11 that is set at a film formation position (plasma processing position) inside the film formation chamber 4. In this case, the cathode device 10 may be configured in a box shape called a cathode box. The cathode device 10 is capable of swinging horizontally along the main surface of the glass substrate 11 relative to the glass substrate 11, which is set to a film formation position (plasma treatment position) inside the film formation chamber 4 of the down sputtering type shown in Figure 2.

[0053] In the following explanation, we will explain the cathode device 10 inside the side sputtering type film formation chamber 4 shown in Figure 1, but the cathode device 10 inside the down sputtering type film formation chamber 4 shown in Figure 2 can also have the same configuration, except that the oscillation direction is different.

[0054] FIG. 3 is a schematic diagram showing the positional relationship between the glass substrate and the configuration of the cathode device in the sputtering device of this embodiment. The cathode device 10 has one cathode unit 22 as shown in FIG. 3, the cathode unit 22 is disposed along the ZX plane facing the surface of the glass substrate 11. In the cathode unit 22, the target 23, the backing plate 24, and the magnet unit 21 are disposed in this order from a position close to the glass substrate 11 toward the Y direction away from the glass substrate 11.

[0055] 3, the cathode device 10 is depicted as a vertical type in which the target 23 is set up vertically and approximately parallel to the glass substrate 11, in accordance with the side sputtering method shown in Fig. 1. Furthermore, the configuration of this embodiment can be adapted to a similar configuration even in the case of down deposition in which the glass substrate 11 is placed horizontally below the target 23, in accordance with the down sputtering method shown in Fig. 2, by interpreting the X, Y, and Z directions accordingly.

[0056] FIG. 4 is a front view showing the positional relationship between the glass substrate, the target, and the magnet unit in the sputtering apparatus of this embodiment. The target 23 is arranged in a flat plate shape along the ZX plane facing the glass substrate 11. The target 23 is exposed at a position facing the glass substrate 11 on the surface of the cathode box.

[0057] 4, the target 23 has a width in the Z direction that is greater than that of the glass substrate 11. The target 23 also has a width in the X direction, which is the oscillation direction, that is greater than that of the glass substrate 11. An anode 28 is provided around the target 23. The anode 28 is provided around the entire periphery of the target 23. The anode 28 covers the backing plate 24 that protrudes from the target 23 and faces the glass substrate 11.

[0058] The position of the anode 28 in the Y direction coincides with that of the target 23. The thicknesses of the anode 28 and the target 23 are approximately equal. Note that the thickness of the anode 28 and the target 23 may be such that the thickness of the anode 28 is greater than that of the target 23, or may be such that the thickness of the anode 28 is smaller than that of the target 23.

[0059] The anode 28 is supported by a wall 45 of the film formation chamber 4. The anode 28 is connected to the wall 45 at a peripheral position spaced apart from the target 23. The wall 45 has a wall 45a erected in the Y direction in a direction from the anode 28 spaced apart from the target 23 toward the target 23, and a wall 45b whose position in the Z direction is substantially the same as that of the glass substrate 11 during film formation. The anode 28 is connected to a wall portion 45 by an insulating support portion 44. The wall portion 45 is at a ground potential. The anode 28 is electrically separated from the wall portion 45. The insulating support portion 44 will be described later.

[0060] An anode potential setting mechanism 40 is connected to the anode 28. The anode potential setting mechanism 40 sets the potential of the anode 28 relative to the target 23, the backing plate 24, the glass substrate 11, a wall 45 of the film formation chamber 4, and the like.

[0061] The anode potential setting mechanism 40 is configured to be able to set the potential of the anode 28 relative to the cathode. That is, the anode potential setting mechanism 40 can set the potential of the anode 28 relative to the backing plate 24 or the target 23. The anode potential setting mechanism 40 is, for example, a DC power supply connected to the anode 28 to apply a potential. The anode potential setting mechanism 40 is connected to the control unit 26. Since the anode 28 is electrically separated from the wall portion 45 , the anode potential setting mechanism 40 can set the potential independently of other parts of the film formation chamber 4 .

[0062] The backing plate 24 is formed in a flat plate shape along the ZX plane facing the glass substrate 11. The backing plate 24 is bonded to the surface of the target 23 that does not face the glass substrate 11. The backing plate 24 is bonded to the surface of the target 23 opposite the glass substrate 11. A control unit 26 having a DC power supply is connected to the backing plate 24. DC power supplied from the DC power supply is supplied to the target 23 through the backing plate 24. Instead of a DC power supply, a DC power supply, a pulse power supply, or an RF power supply may be used as the power supply for the cathode. The cathode unit 22 has a target 23 arranged along the ZX plane facing the film formation surface 11a of the glass substrate 11. The cathode unit 22 has a magnet unit 21 on the back side of the target 23, that is, at a position close to a backing plate 24 with respect to the target 23, where a plurality of magnets 25 are arranged.

[0063] The magnet unit 21 has a plurality of magnets 25 arranged in parallel. The magnets 25 are multiple magnets. The plurality of magnets 25 are all arranged such that their longitudinal direction is along the Z direction. The plurality of magnets 25 are arranged parallel to one another along the ZX plane. The longitudinal direction of the magnets 25 extends in an oscillation width direction that intersects with the oscillation direction along the surface of the glass substrate 11. The longitudinal direction of the magnets 25 extends in an oscillation width direction that intersects with the oscillation direction along the surface of the glass substrate 11. In the X direction, the plurality of magnets 25 are arranged at equal intervals from one another.

[0064] In the magnet unit 21 of this embodiment, for example, nine magnets 25 are arranged adjacent to each other in the X direction. In the magnet unit 21, the number of magnets 25 can be appropriately set depending on the area of ​​the glass substrate 11, the area of ​​the target 23, or the swing range of the magnet unit 21, which will be described later. In the cathode unit 22 of this embodiment, the target 23 is fixedly disposed with respect to the glass substrate 11, and the target 23 is fixed to the film formation chamber 4.

[0065] The magnets 25 each form a magnetic circuit. Each magnet 25 forms a magnetron magnetic field on the surface 23 a of the target 23 facing the glass substrate 11 . In the magnet unit 21, each magnet 25 may be configured to form a predetermined magnetic circuit by combining permanent magnets. In the magnet unit 21, each magnet 25 may be individually connected to the control unit 26, so that the state of the magnetic field generated by each magnet can be individually controlled. A magnetic field line tilting mechanism is provided on the magnets 25 at the end of the X direction (ie, the swing direction) of the magnet unit 21, that is, at the swing end and swing start. The magnetic field line tilting mechanism will be described later.

[0066] FIG. 5 is an enlarged cross-sectional view showing an end portion of a magnet unit of the sputtering apparatus of this embodiment. In the magnet unit 21, the magnet 25 has a yoke 31, a central magnet portion 50, and a peripheral edge magnet portion 60, as shown in FIGS.

[0067] 4 and 5, the yoke 31 is a flat magnet base having a substantially rectangular outline. The yoke 31 has a central region 25a on its surface. The yoke 31 can be made of SUS430 or the like. The central magnet section 50 is a rod-shaped composite magnet body with its longitudinal direction in the Z direction. The central magnet section 50 is disposed at the center position in the X direction in the central region 25a. The central magnet section 50 is disposed in a substantially linear manner along the Z direction. The peripheral magnet portion 60 is spaced apart from the central magnet portion 50 on the plane of the magnet base (yoke) 31 and is provided so as to surround the central magnet portion 50. The peripheral magnet portion 60 is a substantially elliptical ring-shaped magnet arranged along the ZX plane.

[0068] As shown in Figures 4 and 5, both the central magnet section 50 and the peripheral magnet section 60 have magnetic pole faces (magnetic pole planes) 30 facing in the Z direction. Both the central magnet section 50 and the peripheral magnet section 60 have magnetic pole faces 30 along the ZX plane. The central magnet section 50 and the peripheral magnet section 60 have opposite polarities. The central magnet section 50 and the peripheral magnet section 60 form a magnetic circuit. The central magnet portion 50 and the peripheral magnet portion 60 form parallel regions that are parallel to each other in the central region 25a in the Z direction, which is the longitudinal direction of the magnet 25.

[0069] The central magnet section 50 is divided into multiple parts in the Z direction along which it extends. The divided individual magnets of the central magnet section 50 are arranged adjacent to each other in the Z direction. The central magnet section 50 is configured with multiple magnets arranged in a rod shape.

[0070] Similarly, the peripheral edge magnet portion 60 is divided into multiple pieces along the Z and X directions extending in a ring shape. The divided individual magnets of the peripheral edge magnet portion 60 are arranged adjacent to each other in the Z and X directions. The peripheral edge magnet portion 60 is configured with multiple magnets arranged in a ring shape. The peripheral edge magnet portion 60 is arranged in an oval shape, in other words, a racetrack shape, in the ZX plane. Alternatively, the peripheral edge magnet portion 60 is arranged in a shape close to a rectangle with rounded corners in the ZX plane.

[0071] Here, an oval shape is a shape obtained by dividing a circle in half on a plane, separating the two halves in a direction perpendicular to the dividing line, and connecting the opposing ends with two parallel lines. Alternatively, a racetrack shape refers to a contour shape obtained by rounding the four corners of a rectangle and rounding the corners in an arc so that the short sides disappear.

[0072] As shown in FIGS. 4 and 5, the peripheral edge magnet portion 60 has a longitudinal straight portion 61, a longitudinal straight portion 62, and a bridging portion 63. The longitudinal straight portions 61 and 62 are portions of the peripheral edge magnet portion 60 that extend in the Z direction. The longitudinal straight portions 61 and 62 both extend parallel to both sides of the central magnet portion 50 in the ZX plane. The longitudinal straight portions 61 and 62 are spaced apart from each other in the X direction over their entire lengths in the Z direction. The longitudinal straight portions 61 and 62 are arranged at equal intervals in the X direction over their entire lengths in the Z direction.

[0073] The longitudinal straight portion 61 and the longitudinal straight portion 62 are formed to have the same overall length in the Z direction. The longitudinal straight portion 61 and the longitudinal straight portion 62 are arranged at equal positions in the Z direction relative to the central magnet portion 50. The longitudinal straight portion 61 and the longitudinal straight portion 62 are formed to have the same overall length in the Z direction and the same width dimension in the X direction. The outer peripheral surface (outer peripheral portion) of the longitudinal straight portion 61 and the outer peripheral surface (outer peripheral portion) of the longitudinal straight portion 62 are arranged along the side of the outer peripheral contour of the yoke 31 that is along the Z direction.

[0074] The Z-direction end (end face) of the longitudinal straight portion 61 and the Z-direction end (end face) of the longitudinal straight portion 62 are arranged at the same position in the Z direction. The inner circumferential surface (inner circumferential portion) of the longitudinal straight portion 61 and the inner circumferential surface (inner circumferential portion) of the longitudinal straight portion 62 face each other in parallel. The inner circumferential surfaces of the longitudinal straight portion 61 and the longitudinal straight portion 62 are both formed along the ZY plane.

[0075] The bridging portion 63 bridges the Z-direction ends of the longitudinal straight portion 61 and the longitudinal straight portion 62. The bridging portion 63 has a bridge portion between the longitudinal straight portion 61 and the longitudinal straight portion 62 in the Z direction. The bridging portion 63 is arranged at the Z-direction end of the magnet 25. The bridging portion 63 extends from the Z-direction end 61a of the longitudinal straight portion 61 toward the Z direction, bends in the X direction, and then bends again in the Z direction to connect to the Z-direction end of the longitudinal straight portion 62. The bridging portion 63 is included in an end region 25b that is outer in the Z direction than the central region 25a.

[0076] The peripheral magnet portion 60 is composed of a longitudinal straight portion 61 and a longitudinal straight portion 62, which are divided into predetermined lengths and linearly assembled together. The magnets that make up the longitudinal straight portion 61 and the longitudinal straight portion 62 are all permanent magnets. The bridging portion 63 is also divided into predetermined lengths and assembled together. The magnets that make up the bridging portion 63 are all permanent magnets.

[0077] The radial thickness of the peripheral edge magnet portion 60 along the ZX plane can be formed to be approximately equal at the longitudinal straight portions 61, 62, and bridging portion 63. Note that the radial thickness of the peripheral edge magnet portion 60 along the ZX plane may be formed to be smaller at the corner portions of the bridging portion 63 than at the longitudinal straight portions 61 and 62.

[0078] As shown in Figures 4 and 5, the central magnet section 50 is formed in a linear or rod-like shape in the Z direction, which is the longitudinal direction. The central magnet section 50 is divided into sections of a predetermined length and combined linearly. Each magnet that makes up the central magnet section 50 is a permanent magnet. The central magnet section 50 is not in contact with the peripheral magnet sections 60. The central magnet section 50 is spaced apart from the peripheral magnet sections 60.

[0079] The cathode device 10 includes a magnet unit scanning section 29 that moves the magnet unit 21 along a swing direction, which is one scanning direction. The swing direction is an X direction that is perpendicular to the Z direction in which the magnets 25 of the magnet unit 21 are arranged upright. The magnet unit scanning unit 29 changes the position of the magnet unit 21 relative to the target 23. The magnet unit scanning unit 29 changes the positions of the multiple magnets 25 relative to the target 23. The magnet unit scanning unit 29 can swing the multiple magnets 25 without changing the relative positional relationship between them. In other words, each of the magnets 25 can be moved (swung) by the magnet unit scanning unit 29 relative to the target 23 in parallel to the particle emission surface of the target 23.

[0080] When viewed from the Y direction, the area scanned by the magnet unit 21 by the magnet unit scanning section 29 is referred to as the oscillation area. Note that the expression "along the oscillation area" may also mean "along the ZX plane." When viewed from the Y direction, the oscillation area has a substantially rectangular outline. The oscillation area is defined between one oscillation end and the other oscillation end, which are the respective oscillation ends in the X direction.

[0081] The magnet unit scanning section 29 is composed of, for example, rails extending along the scanning direction, rollers attached to each of the two ends of the cathode unit 22 in the X direction, and multiple motors for rotating each of the rollers. The magnet unit scanning section 29 may also be composed of an LM guide or the like having rails extending along the scanning direction. The rails of the magnet unit scanning section 29 have a width in the scanning direction (X direction) that is approximately the same as or longer than that of the target 23. Note that the magnet unit scanning section 29 may be embodied in other configurations as long as it is possible to move the plurality of magnets 25 as a unit along the scanning direction.

[0082] FIG. 6 is an enlarged cross-sectional view showing an insulating support part of the sputtering apparatus in this embodiment. 6, the insulating support portion 44 electrically insulates the anode 28 from the wall portion 45a. The insulating support portion 44 maintains a state in which the potential of the anode 28 can be set relative to the target 23, the backing plate 24, the glass substrate 11, the wall portion 45 of the film formation chamber 4, etc.

[0083] The insulating support part 44 fixes the anode 28 to the wall part 45a. The insulating support part 44 has a bolt 44a, an insulating upper member 44b, and an insulating lower member 44c. The bolt 44a fixes the anode 28 to the wall portion 45a. The bolt 44a passes through a through-hole 28a provided in the anode 28. The bolt 44a is screwed into a male thread portion 45d provided in the wall portion 45a.

[0084] The insulating upper member 44b insulates the anode 28 from the bolt 44a. The insulating upper member 44b is formed from an insulating material. The insulating upper member 44b has a cylindrical portion that surrounds the bolt head of the bolt 44a and a disk portion that is sandwiched at the friction position between the bolt head of the bolt 44a and the enlarged portion of the through hole 28a. The insulating upper member 44b is disposed between the bolt head of the bolt 44a and the anode 28. The insulating upper member 44b is disposed in the enlarged portion of the through hole 28a.

[0085] The insulating lower member 44c insulates the bolt 44a from the wall portion 45a. The insulating lower member 44c is formed from an insulating material. The insulating lower member 44c is disposed in the expanded diameter portion 45c, which is closer to the anode 28 than the male thread portion 45a. The insulating lower member 44c is cylindrical. The axial length of the insulating lower member 44c is greater than the depth dimension of the expanded diameter portion 45c. One end of the insulating lower member 44c contacts the anode 28. The other end of the insulating lower member 44c contacts the bottom of the expanded diameter portion 45c.

[0086] The insulating upper member 44b is sandwiched between the anode 28 and the bolt head of the bolt 44a. By sandwiching the insulating upper member 44b between the anode 28 and the bolt head of the bolt 44a, the anode 28 and the bolt 44a do not come into direct contact with each other. The insulating lower member 44c is sandwiched between the anode 28 and the wall portion 45a. By sandwiching the insulating lower member 44c between the anode 28 and the wall portion 45a, the anode 28 and the wall portion 45a do not come into direct contact with each other. This allows the anode 28 to be at a different potential than the wall 45 .

[0087] In the cathode unit 22 of this embodiment, as shown in Figures 3 and 4, when sputtered particles are emitted by the magnet unit scanning section 29 to form a film, the magnet unit 21 is moved back and forth between the oscillation end position Revers and the oscillation end position Forward.

[0088] In the cathode unit 22, a multi-magnet consisting of multiple magnets 25 is collectively called the magnet unit 21. In the cathode unit 22, the magnet unit scanning section 29 moves the magnet unit 21 from the center position (center) in the oscillation direction (X direction) to the right in FIGS. 3 and 4 to the oscillation end position Forward, then left from the oscillation end position Forward via the center position (center) to the oscillation end position Revers, and then from the oscillation end position Revers to the center position, completing one scan. In the cathode unit 22, this scan is repeated multiple times.

[0089] At the same time, in the magnet unit 21, the central magnet portion 50 and peripheral magnet portion 60 of each magnet 25 form a magnetic field. In the magnet 25, the central magnet portion 50, peripheral magnet portion 60, and yoke 31 form a magnetic circuit. In this way, while the magnet 25 maintains the state of forming magnetic lines of force, the magnet unit 21 is scanned by the magnet unit scanning portion 29.

[0090] Next, film formation on the glass substrate 11 in the sputtering apparatus 1 according to this embodiment will be described.

[0091] First, the glass substrate 11 is carried from the outside to the inside of the sputtering apparatus 1 and placed on a positioning member in the load / unload chamber 2, where the glass substrate 11 is aligned (see FIG. 1). Next, the glass substrate 11 is supported by the robot hand of the transfer device 3a and taken out of the load / unload chamber 2. Then, the glass substrate 11 is transferred to the film formation chamber 4 via the transfer chamber 3.

[0092] In the film formation chamber 4, the substrate holding part 13 is rotated by a drive part and placed in a horizontal placement position. Furthermore, the lift pins are placed in a preparation position protruding upward from the substrate holding part 13 by a lift pin moving part (not shown). In this state, the glass substrate 11 that has reached the film formation chamber 4 is inserted above the substrate holder 13 by the transfer device 3a.

[0093] Next, the robot hand of the transfer device 3a descends and approaches the substrate holding unit 13, and the glass substrate 11 is placed on the lift pins in a state of being aligned with a predetermined position on the substrate holding unit 13. Thereafter, the robot hand of the transfer robot 3a retreats into the transfer chamber 3. Then, the lift pins descend and the glass substrate 11 is supported on the substrate holding unit 13.

[0094] Next, if the sputtering apparatus 1 is a side sputtering type apparatus, the substrate holder 13 is rotated, and the glass substrate 11, while held by the substrate holder 13, rises to reach a vertical processing position. As a result, the film formation port 4b is almost closed by the glass substrate 11, and the glass substrate 11 is held at the film formation position. In this state, a predetermined gas atmosphere is created by the gas control unit 14, plasma is generated by the control unit 26, and film formation processing is performed by sputtering. Furthermore, in the sputtering apparatus 1, when a film formation process is performed, the control unit 26 controls the anode potential setting mechanism 40 to set the potential of the anode 28. The generation of plasma by the anode potential setting mechanism 40 during the film formation process will be described later.

[0095] When the sputtering apparatus 1 is a sputter-down type apparatus, the substrate holder 13 rises, and the glass substrate 11 reaches a vertical processing position while being held by the substrate holder 13. As a result, the film formation port 4b is almost closed by the glass substrate 11, and the glass substrate 11 is held at the film formation position. In this state, a predetermined gas atmosphere is created by the gas control unit 14, plasma is generated by the control unit 26, and film formation processing is performed by sputtering.

[0096] If the sputtering device 1 is a side sputtering type device, when the film formation process is completed, the substrate holding portion 13 is rotated, and the glass substrate 11 reaches a horizontal placement position while being held by the substrate holding portion 13.

[0097] If the sputtering device 1 is a sputter-down type device, when the film formation process is completed, the substrate holding part 13 descends, and the glass substrate 11 reaches a position where it can be removed while being held by the substrate holding part 13. After the film formation process, the glass substrate 11 is removed from the film formation chamber 4 by the transfer device 3a. Then, the glass substrate 11 is removed from the load / unload chamber 2 via the transfer chamber 3.

[0098] The operation of the anode potential setting mechanism in this embodiment will be described below.

[0099] The operation of the magnet unit 21 will now be described. FIG. 11 is a diagram for explaining the operation of the magnet unit in this embodiment, and is a schematic diagram showing the direction of the magnetic lines of force when there is no anode potential setting mechanism.

[0100] First, a case where the anode potential setting mechanism 40 is not provided, that is, a case where the potential of the anode 28 is set to the ground potential, will be described. As described above, the magnetic field formed by the magnet 25 generates plasma between the surface 23a of the target 23 and the glass substrate 11. In this state, a film is formed on the surface of the glass substrate 11 under the sputtering conditions described below.

[0101] During sputtering, magnetic lines of force are formed from the N-pole peripheral magnet portion 60 to the S-pole central magnet portion 50. The central magnet portion 50, peripheral magnet portion 60, and yoke 31 form a magnetic circuit. This causes the electrons to track along the magnetic field lines.

[0102] At this time, at the oscillation end positions of the oscillation range of the target 23, as shown in Fig. 11, magnetic field lines from the N-pole peripheral magnet portion 60 are directed toward the nearby anode 28, and the density of the magnetic field lines decreases on the surface 23a of the target 23. In other words, the density of tracked electrons becomes insufficient, and the plasma density becomes insufficient. As a result, no erosion region is formed on the surface 23a of the target 23, and non-erosion regions are formed at both ends in the X direction. The magnetic field lines from the N-pole peripheral magnet portion 60 tilt leftward in the X direction toward the anode 28 as they move in the Y direction.

[0103] Furthermore, magnetic lines of force are formed from the N-pole peripheral magnet portion 60 to the S-pole central magnet portion 50. These magnetic lines of force cause electrons to circulate along the ZX plane around the central magnet portion 50, which is surrounded by the peripheral magnet portions 60, on the surface 23a of the target 23. At this time, the electrons moving in the Z direction along the end of the longitudinal direction of the magnet 25, that is, along the central magnet portion 50, slow down in movement speed and increase in density near the point where they bend in the X direction along the bridging portion 63.

[0104] As a result, the electron density decreases near the position where the electrons bend from the X direction to the Z direction along the bridging portion 63 to the peripheral magnet portion 60. As a result, erosion on the surface 23a of the target 23 decreases, and a non-erosion region is formed. This phenomenon occurs in the two magnets 25 at both ends in the X direction (oscillation ends), because the directions of the electrons circulating around the central magnet portion 50 are opposite each other in the adjacent magnets 25, causing them to cancel each other out. Moreover, at both ends in the X direction, the positions where the non-erosion regions are formed are opposite in the Z direction. In other words, the positions where the non-erosion regions are formed at both ends in the X direction are diagonal positions on the target 23.

[0105] As a result, without a magnetic field line tilting mechanism, non-erosion regions are formed at two diagonal corners of the target 23. Furthermore, when non-erosion regions are formed in this way, other non-erosion regions are likely to form in addition to the two opposite corners in the X direction and the two opposite corners. This is because, when non-erosion regions are formed, the applied power is not consumed in plasma generation and becomes surplus. This surplus power is redistributed to regions other than the non-erosion regions at the two opposite corners in the X direction or the two opposite corners, or is absorbed as an overall voltage (power) fluctuation. Therefore, it is thought that the plasma generation conditions fluctuate depending on the position on the surface of the target 23, just as when voltage fluctuations occur.

[0106] Next, the case where the anode potential setting mechanism 40 is provided will be described. Fig. 7 is a diagram for explaining the operation of the anode potential setting mechanism, and is a schematic diagram showing the direction of magnetic field lines when the anode potential setting mechanism is present. Fig. 8 is a diagram for explaining the operation of the anode potential setting mechanism, and is a schematic diagram showing the electron tracking state in the ZX plane when the anode potential setting mechanism is present.

[0107] In the sputtering apparatus 1 of this embodiment, during sputtering, in the magnet 25 at the oscillation end of the oscillation range, magnetic field lines are formed from the N-pole peripheral magnet portion 60 to the S-pole central magnet portion 50, as shown in Fig. 7. At this time, the anode 28 is set to a negative potential by the anode potential setting mechanism 40. In addition, a magnetic circuit is formed by the central magnet portion 50, the peripheral magnet portion 60, and the yoke 31. As a result, in the sputtering apparatus 1 of this embodiment, electrons are tracked along the magnetic lines of force, as shown in FIG.

[0108] 7, in the magnet 25 at the oscillation end, magnetic field lines from the N-pole peripheral magnet portion 60 are directed toward the anode 28, just as in the case where the anode potential setting mechanism 40 is not present. Even when the anode 28 adjacent to the oscillation end in the oscillation region is set to a negative potential, magnetic field lines are formed in the same way as when the anode potential setting mechanism 40 is not present and the anode 28 is at ground potential.

[0109] Therefore, when the anode 28 is set to a negative potential, the state in which the magnetic field lines are attracted to the anode 28 remains unchanged. However, when the anode 28 is set to a negative potential, the electrons are not attracted to the anode 28. In other words, the electrons are not lost at the anode 28. This is because electrons flow through the plasma toward a portion with low impedance near the anode 28. In other words, the electrons do not flow into the anode 28, which is at a negative potential rather than at ground potential, but instead flow into the wall portion 45 through the plasma.

[0110] As a result, in the sputtering apparatus 1, the plasma generating current returns to the AC power supply side, the plasma generating current is established as a circuit, and the plasma generating state is maintained stably. In order for the plasma generating current to function as a circuit, it is important that the anode 28 is electrically isolated from the wall 45 and other parts that are at ground potential. In this embodiment, the anode 28 is electrically isolated from the wall 45 and other parts by the insulating support part 44. This prevents electrons from being absorbed by the anode 28, and allows the plasma generation state to be stably maintained.

[0111] As a result, the density of magnetic lines of force does not decrease on the surface 23a of the target 23. In other words, in the magnet 25 at the oscillation end, the density of tracked electrons is sufficiently maintained, and the plasma density is also sufficiently maintained. As a result, the non-erosion regions formed at both ends in the X direction on the surface 23a of the target 23 can be suppressed.

[0112] Furthermore, in the magnet 25 that serves as the oscillation end, a magnetic circuit is formed by the central magnet portion 50 and the peripheral magnet portion 60, and magnetic field lines are formed from the north-pole peripheral magnet portion 60 to the south-pole central magnet portion 50. As a result, the movement speed of electrons circulating around the central magnet portion 50, which is surrounded by the peripheral magnet portions 60 on the surface 23a of the target 23, is not slowed down at the longitudinal ends of the magnet 25. Therefore, an increase in electron density is suppressed at the Z-direction ends of the magnet 25. In other words, in the magnet 25 that serves as the oscillation end, the movement speed of electrons that have moved in the Z direction along the central magnet portion 50 is not slowed down near the point where they bend in the X direction along the bridging portion 63. Furthermore, an increase in electron density is suppressed near the point where they bend in the X direction along the bridging portion 63.

[0113] As a result, in the magnet 25 at the oscillation end, a decrease in electron density does not occur at the position where electrons bend from the longitudinal straight portion 61 or the longitudinal straight portion 62 to the Z direction along the bridging portion 63. As a result, in the two magnets 25 at both ends in the X direction, the formation of non-erosion regions on the surface 23a of the target 23 can be suppressed. In other words, by setting the anode 28 to a negative potential by the anode potential setting mechanism 40, the formation of non-erosion regions at two diagonal corners can be suppressed. This suppresses voltage fluctuations in the target 23. The formation of non-erosion regions at the X-direction end of the target 23 can be suppressed. Therefore, the target 23 can be prevented from easily forming non-erosion regions other than the X-direction end and the two diagonal corners.

[0114] According to the sputtering apparatus 1 of this embodiment, by providing an anode potential setting mechanism 40 and setting the anode 28 to a negative potential, it is possible to prevent electrons from being lost in the magnet 25 at the oscillation end, even though the magnetic field lines formed by this magnet 25 are directed toward the anode 28. In other words, the plasma generating current can be established as a circuit without being affected by the shape of the magnetic field lines formed by the magnet 25. As a result, the sputtering apparatus 1 can stably maintain the plasma generation state and reduce the total area in which non-erosion regions are formed.

[0115] In other words, the sputtering apparatus 1 can suppress the generation of particles by reducing the generation of non-erosion regions. In other words, the sputtering apparatus 1 can reduce the formation of erosion-non-erosion boundary regions, which cause particles to be generated because the boundary between the non-erosion region and the erosion region becomes unclear.

[0116] Furthermore, by suppressing the occurrence of non-erosion regions, the sputtering apparatus 1 can prevent the redistribution of supplied power. This allows the sputtering apparatus 1 to suppress spike fluctuations in the discharge voltage and suppress partial fluctuations in plasma generation conditions due to voltage fluctuations, etc. Therefore, the sputtering apparatus 1 can suppress particle generation and variations in film quality characteristic distributions such as film thickness distribution and sheet resistance value distribution.

[0117] A second embodiment of the sputtering apparatus according to the present invention will be described below with reference to the drawings. Fig. 9 is a diagram for explaining the operation of the anode potential setting mechanism, and is a schematic diagram showing the direction of magnetic field lines when the anode potential setting mechanism is present. Fig. 10 is a diagram for explaining the operation of the anode potential setting mechanism, and is a schematic diagram showing the electron tracking state in the ZX plane when the anode potential setting mechanism is present. This embodiment differs from the first embodiment described above in terms of the potential set by the anode potential setting mechanism, and other configurations corresponding to those of the first embodiment described above are given the same reference numerals and descriptions thereof will be omitted.

[0118] The anode potential setting mechanism 40 in this embodiment sets the anode 28 to a floating potential. Here, the anode potential setting mechanism 40 may actively set the anode 28 to a floating potential, or may be switchable so as to disconnect the anode potential setting mechanism 40, which is a power source, from the anode 28.

[0119] In the sputtering apparatus 1 of this embodiment, during sputtering, in the magnet 25 at the swing end of its swing range, magnetic field lines are formed from the N-pole peripheral magnet portion 60 to the S-pole central magnet portion 50, as shown in Fig. 9. At this time, the anode 28 is set to a floating potential by the anode potential setting mechanism 40. In addition, a magnetic circuit is formed by the central magnet portion 50, the peripheral magnet portion 60, and the yoke 31. As a result, in the sputtering apparatus 1 of this embodiment, electrons are tracked along the magnetic lines of force, as shown in FIG.

[0120] 9, in the magnet 25 at the oscillation end, magnetic field lines from the N-pole peripheral magnet portion 60 are directed toward the anode 28, just as in the case where there is no anode potential setting mechanism 40. Even when the anode 28 adjacent to the oscillation end in the oscillation region is set to a floating potential, magnetic field lines are formed in the same way as when there is no anode potential setting mechanism 40 and the anode 28 is at ground potential.

[0121] Therefore, when the anode 28 is set to a floating potential, the state in which the magnetic field lines are attracted to the anode 28 remains unchanged. However, when the anode 28 is set to a floating potential, electrons are not attracted to the anode 28. In other words, electrons are not lost at the anode 28. This is because electrons flow through the plasma toward areas with low impedance near the anode 28. In other words, the electrons flow into the wall portion 45 through the plasma, instead of flowing into the anode 28, which is at a floating potential rather than a ground potential.

[0122] As a result, in the sputtering apparatus 1, the plasma generating current returns to the AC power supply side, the plasma generating current is established as a circuit, and the plasma generating state is maintained stably. In order for the plasma generating current to function as a circuit, it is important that the anode 28 is electrically isolated from the wall 45 and other parts that are at ground potential. In this embodiment, the anode 28 is electrically isolated from the wall 45 and other parts by the insulating support part 44. This prevents electrons from being absorbed by the anode 28, and allows the plasma generation state to be stably maintained.

[0123] As a result, the density of magnetic lines of force does not decrease on the surface 23a of the target 23. In other words, in the magnet 25 at the oscillation end, the density of tracked electrons is sufficiently maintained, and the plasma density is also sufficiently maintained. As a result, the non-erosion regions formed at both ends in the X direction on the surface 23a of the target 23 can be suppressed.

[0124] Furthermore, in the magnet 25 that serves as the oscillation end, a magnetic circuit is formed by the central magnet portion 50 and the peripheral magnet portion 60, and magnetic field lines are formed from the north-pole peripheral magnet portion 60 to the south-pole central magnet portion 50. As a result, the movement speed of electrons circulating around the central magnet portion 50, which is surrounded by the peripheral magnet portions 60 on the surface 23a of the target 23, is not slowed down at the longitudinal ends of the magnet 25. Therefore, an increase in electron density is suppressed at the Z-direction ends of the magnet 25. In other words, in the magnet 25 that serves as the oscillation end, the movement speed of electrons that have moved in the Z direction along the central magnet portion 50 is not slowed down near the point where they bend in the X direction along the bridging portion 63. Furthermore, an increase in electron density is suppressed near the point where they bend in the X direction along the bridging portion 63.

[0125] As a result, in the magnet 25 at the oscillation end, a decrease in electron density does not occur at the position where electrons bend from the longitudinal straight portion 61 or the longitudinal straight portion 62 to the Z direction along the bridging portion 63. As a result, in the two magnets 25 at both ends in the X direction, the formation of non-erosion regions on the surface 23a of the target 23 can be suppressed. In other words, by setting the anode 28 to a floating potential by the anode potential setting mechanism 40, the formation of non-erosion regions at two diagonal corners can be suppressed. This suppresses voltage fluctuations in the target 23. The formation of non-erosion regions at the X-direction end of the target 23 can be suppressed. Therefore, the target 23 can be prevented from easily forming non-erosion regions other than the X-direction end and the two diagonal corners.

[0126] According to the sputtering apparatus 1 of this embodiment, by providing an anode potential setting mechanism 40 and setting the anode 28 to a floating potential, it is possible to prevent electrons from being lost in the magnet 25 at the oscillation end, even though the magnetic field lines formed by this magnet 25 are directed toward the anode 28. In other words, the plasma generating current can be established as a circuit without being affected by the shape of the magnetic field lines formed by the magnet 25. As a result, the sputtering apparatus 1 can stably maintain the plasma generation state and reduce the total area in which non-erosion regions are formed.

[0127] In other words, the sputtering apparatus 1 can suppress the generation of particles by reducing the generation of non-erosion regions. In other words, the sputtering apparatus 1 can reduce the formation of erosion-non-erosion boundary regions, which cause particles to be generated because the boundary between the non-erosion region and the erosion region becomes unclear.

[0128] Furthermore, by suppressing the occurrence of non-erosion regions, the sputtering apparatus 1 can prevent the redistribution of supplied power. This allows the sputtering apparatus 1 to suppress spike fluctuations in the discharge voltage and suppress partial fluctuations in plasma generation conditions due to voltage fluctuations, etc. Therefore, the sputtering apparatus 1 can suppress particle generation and variations in film quality characteristic distributions such as film thickness distribution and sheet resistance value distribution.

[0129] Furthermore, in the present invention, it is also possible to individually select and combine the individual configurations in the above-described embodiments.

[0130] For example, in this embodiment, the anode potential setting mechanism 40 sets the anode 28 to a floating potential, but the anode 28 and the wall portion 45a may be collectively set to a floating potential or a negative potential. Furthermore, the anode 28 and the wall portion 45a and the wall portion 45b may be collectively set to a floating potential or a negative potential. [Explanation of symbols]

[0131] 1...Sputtering equipment 4...Film formation chamber 10...Cathode device 11...Glass substrate (film-forming substrate, transparent substrate) 22...Cathode unit 23...Target 24...Backing plate 25...Magnet (magnetic circuit) 26...Control unit 27...Auxiliary magnet 28...Anode 29...Magnet unit scanning section 31…York 40...Anode potential setting mechanism 41...Front space 42...Back space 44...Insulating support part 50...Central magnet part 60...Peripheral magnet part 61,62...Longitudinal straight section 63...Bridge section

Claims

1. a cathode unit corresponding to the anode in the vacuum chamber, which emits sputtered particles toward a deposition region of the substrate; a target on which an erosion region is formed; a magnet unit disposed on the opposite side of the target from the deposition substrate, the magnet unit forming the erosion region on the target; a magnet unit scanning unit capable of relatively reciprocating the magnet unit and the film formation substrate in a swing region defined between one swing end and the other swing end in a swing direction (scanning direction) along the target surface; an insulating support portion that supports the anode; and the anode is disposed around the target such that a position of the anode in a thickness direction of the target coincides with the target, and an outer peripheral position spaced apart from the target is connected to a wall of the vacuum chamber in an electrically insulated manner; The magnet unit has a magnet whose longitudinal direction extends along the surface of the substrate in a swing width direction that intersects with the swing direction, and an anode potential setting mechanism connected to the anode; the anode potential setting mechanism forms magnetic lines of force that penetrate the target from its rear surface side to its front surface side in the thickness direction of the target and return from the front surface side to the rear surface side, and sets the anode to a negative potential or a floating potential with respect to the cathode unit so that electrons tracked by the magnetic lines of force do not enter the anode even if the magnetic lines of force are inclined toward the anode; the insulating support portion has a bolt, an insulating upper member, and an insulating lower member, and fixes the anode to the wall portion of the vacuum chamber in an electrically insulated manner, and the insulating lower member and the insulating upper member are sandwiched between the anode and the wall portion, so that the bolt does not come into direct contact with the anode. A sputtering apparatus characterized by:

2. The bolt passes through a through hole provided in the anode, The insulating upper member has a cylindrical portion surrounding the bolt head of the bolt and a disk portion sandwiched at a friction position between the bolt head of the bolt and the enlarged diameter portion of the through hole, the insulating lower member is cylindrical, one end of which contacts the anode and the other end of which contacts the anode around the enlarged diameter portion; 2. The sputtering apparatus according to claim 1.

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