Plasma processing apparatus and method for manufacturing the same

Abstract

To provide a technique capable of stably suppressing abnormal discharge of a member exposed to a plasma processing space of a processing container.SOLUTION: A plasma processing device includes: a processing container having a plasma processing space therein; a first member that is provided inside the processing container, has at least one first surface exposed to the plasma processing space, and constitutes part of an internal structure of the processing container; and a second member that is provided inside the processing container and in contact with a second surface adjacent to the first surface of the first member. The first member has an inclined surface that is part of the first surface, adjacent to the second surface, and forms a recess in a state in which the second member is in contact with the second surface. At least the first surface and the inclined surface are mutually continuously coated with a sprayed film.SELECTED DRAWING: Figure 4

Description

[Technical Field]

[0001] The present disclosure relates to a plasma processing apparatus and a method for manufacturing a plasma processing apparatus. [Background technology]

[0002] The plasma processing apparatus includes a processing vessel for plasma processing a substrate, a mounting table for placing the substrate inside the processing vessel, a gas supply unit for supplying processing gas into the processing vessel, an exhaust unit for exhausting the processing gas from inside the processing vessel, and a high-frequency power supply unit for generating plasma inside the processing vessel.

[0003] Furthermore, as disclosed in Patent Document 1, the plasma processing apparatus includes a baffle plate that covers the upper part of the exhaust port (exhaust section) of the processing vessel around the mounting table and is exposed to the plasma processing space in order to control exhaust of the processing gas. This baffle plate is made of a conductor and is connected to ground potential via the processing vessel, so that the plasma generated from the processing gas can be confined by an electric field formed with the baffle plate as an opposing electrode. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Patent Publication No. 2021-52140 Summary of the Invention [Problem to be solved by the invention]

[0005] The present disclosure provides a technique that can stably suppress abnormal discharge in members exposed to a plasma processing space in a processing container. [Means for solving the problem]

[0006] According to one aspect of the present disclosure, there is provided a plasma processing apparatus for processing a substrate using plasma, the apparatus comprising: a processing vessel having a plasma processing space therein; a first member provided inside the processing vessel, the first member having at least one first surface exposed to the plasma processing space and constituting a part of an internal structure of the processing vessel; and a second member provided inside the processing vessel, the first member contacting a second surface adjacent to the first surface of the first member, the second member having an inclined surface that is a part of the first surface and adjacent to the second surface, the inclined surface forming a recess when the second member is in contact with the second surface, and at least the first surface and the inclined surface are coated with a thermal sprayed film in a continuous manner. Crate , The second surface of the first member has an exposed surface on which no thermal spray coating is applied, at least in a contact area that contacts the second member, the second member being a support member that supports the first member, and the first member being electrically connected to the support member via the exposed surface. SUMMARY OF THE INVENTION A plasma processing apparatus is provided. [Effects of the Invention]

[0007] According to one aspect, abnormal discharge in a member exposed to a plasma processing space in a processing container can be stably suppressed. [Brief explanation of the drawings]

[0008] [Figure 1] 1 is a schematic cross-sectional view illustrating an example of a plasma processing apparatus according to an embodiment. [Figure 2] 2 is a schematic plan view showing a lower chamber of the plasma processing apparatus of FIG. 1. FIG. [Figure 3] FIG. 4 is a perspective view showing an assembled state of the baffle plate and the support member. [Figure 4] FIG. 4 is a cross-sectional view showing a state in which the baffle plate is supported by a first support member. [Figure 5] FIG. 5(A) is a flowchart showing a method for manufacturing a plasma processing apparatus, and FIG. 5(B) is a flowchart showing the baffle plate preparation step of FIG. 5(A). DETAILED DESCRIPTION OF THE INVENTION

[0009] Hereinafter, embodiments of the present disclosure will be described with reference to the drawings. In the drawings, the same components are denoted by the same reference numerals, and redundant explanations may be omitted.

[0010] Fig. 1 is a cross-sectional view showing an example of a plasma processing apparatus according to an embodiment. As shown in Fig. 1, the plasma processing apparatus 1 is an inductively coupled plasma (ICP) processing apparatus that performs various substrate processes on an FPD substrate (hereinafter simply referred to as substrate G) made of a glass material. Examples of FPDs manufactured by processing the substrate G include liquid crystal displays (LCDs), electroluminescence (ELs), and plasma display panels (PDPs). Note that, in addition to glass, synthetic resins and the like can also be used as materials for the substrate G.

[0011] The substrate G may be either a substrate having a circuit patterned on its surface or a support substrate without a circuit. The planar dimensions of the substrate G are preferably such that the long side is in the range of approximately 1800 mm to 3400 mm and the short side is in the range of approximately 1500 mm to 3000 mm. The thickness of the substrate G is preferably in the range of approximately 0.2 mm to 4.0 mm. Examples of substrate processing performed by the plasma processing apparatus 1 include film formation processing using a CVD (Chemical Vapor Deposition) method and etching processing. The following description will be given taking the plasma processing apparatus 1 performing etching processing as an example of substrate processing.

[0012] The plasma processing apparatus 1 includes a rectangular parallelepiped box-shaped processing vessel 10. The processing vessel 10 is made of a metal such as aluminum or an aluminum alloy. The processing vessel 10 may be formed into an appropriate shape depending on the shape of the substrate G. For example, if the substrate G is a circular plate or an elliptical plate, the processing vessel 10 is preferably formed into a cylindrical shape, an elliptical cylindrical shape, or the like.

[0013] The processing vessel 10 is provided with a rectangular support frame 11 that protrudes inward of the processing vessel 10 at a predetermined vertical position, and this support frame 11 supports a dielectric plate 12 in the horizontal direction. The processing vessel 10 is divided into an upper chamber 13 and a lower chamber 14, sandwiched between the dielectric plate 12. The upper chamber 13 defines an antenna chamber 13a therein. The lower chamber 14 accommodates a substrate G and defines an internal space 14a therein where the substrate is processed.

[0014] A sidewall 15 of the lower chamber 14 is provided with a loading / unloading port 17 that is opened and closed by a gate valve 16. When the gate valve 16 is open, the plasma processing apparatus 1 loads and unloads the substrate G through the loading / unloading port 17 by a transfer device (not shown).

[0015] In addition, the side walls 15 of the lower chamber 14 are grounded (connected to ground potential) via a ground wire 18. Each of the four side walls 15 of the lower chamber 14 has an endless circumferential seal groove 19 at its upper end. A seal member 20 such as an O-ring is placed in the seal groove 19, thereby airtightly sealing the internal space 14a of the support frame 11 and the lower chamber 14.

[0016] The support frame 11 is made of a metal such as aluminum or an aluminum alloy, etc. The dielectric plate 12 is made of a ceramic such as alumina (Al2O3) or quartz.

[0017] A shower head 21, which is connected to the support frame 11 and consists of a plurality of elongated members, is provided inside the support frame 11 and discharges processing gas into the internal space 14a, and also serves as a support beam for supporting the dielectric plate 12. The dielectric plate 12 is supported on the upper surface of the shower head 21. The shower head 21 is preferably made of a metal such as aluminum and has been subjected to a surface treatment by anodization. A gas flow path 21a is formed inside the shower head 21 along the horizontal direction. The shower head 21 also has a plurality of gas discharge holes 21b that communicate between the gas flow path 21a and the lower surface of the shower head 21 (internal space 14a).

[0018] A gas introduction pipe 22 communicating with the gas flow path 21a is connected to the upper surface of the shower head 21. The gas introduction pipe 22 extends upward within the upper chamber 13, penetrates the upper chamber 13, and is connected to a gas supply unit 23 provided outside the processing vessel 10.

[0019] Gas supply unit 23 has a gas supply path 24 connected to gas inlet pipe 22, and is equipped with, in this order from upstream to downstream of gas supply path 24, a gas supply source 25, a mass flow controller 26, and an on-off valve 27. In the etching process, a processing gas is supplied from gas supply source 25, the flow rate of which is controlled by mass flow controller 26, and the supply timing of which is controlled by on-off valve 27. This processing gas flows from gas supply path 24 through gas inlet pipe 22 into gas flow path 21a and is then released into internal space 14a through each gas discharge hole 21b.

[0020] A high-frequency antenna 28 is installed in the upper chamber 13, which forms the antenna chamber 13a. The high-frequency antenna 28 is configured by wiring an antenna wire made of a conductive metal such as copper in a circular or spiral shape. Alternatively, the high-frequency antenna 28 may be configured by installing multiple circular antenna wires. A power supply member 29 extending upward within the upper chamber 13 is connected to the terminals of the high-frequency antenna 28.

[0021] The power supply member 29 has an upper end that protrudes outside the processing vessel 10, and a high-frequency power supply unit 30 is connected to this upper end. The high-frequency power supply unit 30 has a power supply line 30a, which is connected to a high-frequency power supply 32 via a matching box 31 that performs impedance matching. The high-frequency power supply 32 applies high-frequency power of a frequency (e.g., 13.56 MHz) appropriate for the substrate processing to the high-frequency antenna 28. As a result, the high-frequency antenna 28 forms an induced electric field within the lower chamber 14.

[0022] The processing vessel 10 includes a stage 40 (mounting table) in the lower chamber 14 on which the substrate G loaded through the loading / unloading port 17 is placed. The stage 40 has a stage main body 41, a pedestal 42, a plurality of lift pins 43, and a plurality of lift pin lifting mechanisms 44. The substrate G loaded into the lower chamber 14 is transferred to each of the lift pins 43 raised by each of the lift pin lifting mechanisms 44, and is placed on the stage main body 41 by lowering each of the lift pins 43.

[0023] The stage main body 41 is formed in a rectangular shape in a plan view, and has a mounting surface 411 with planar dimensions approximately the same as those of the substrate G. For example, the planar dimensions of the mounting surface 411 may be such that the long side is in the range of approximately 1800 mm to 3400 mm, and the short side is in the range of approximately 1500 mm to 3000 mm.

[0024] A plasma processing space PCS is formed between the mounting surface 411 of the stage body 41 and the shower head 21. In the plasma processing space PCS, plasma is generated by converting the processing gas supplied from the shower head 21 to plasma due to an induction electric field formed by the high-frequency antenna 28. The plasma processing apparatus 1 performs an etching process on the substrate G using the etchant in the plasma generated in the plasma processing space PCS.

[0025] The stage body 41 is made of aluminum, an aluminum alloy, or the like, and includes a cooling mechanism. The cooling mechanism may be configured, for example, with a flow path 45 that circulates a coolant inside the stage body 41, and a chiller 46 that supplies the coolant to the flow path 45. The stage body 41 may also include a heater wire (not shown) that serves as a resistor inside. By controlling these with the control unit 60, the stage body 41 can perform precise temperature control. For example, when performing substrate processing (etching processing), the plasma processing apparatus 1 uses the chiller 46 and heater wire to adjust the temperature of the mounting surface 411 of the stage 40 to about 80°C and maintain that temperature state.

[0026] The pedestal 42 is made of an insulating material and is disposed on the bottom wall 33 of the lower chamber 14 to support the stage body 41. The pedestal 42 has an opening at its bottom, and secures and supports the stage body 41 while keeping it spaced apart from the bottom wall 33. The pedestal 42 may have a structure that can be separated into a lower member that supports the stage body 41 and an upper member that surrounds the side of the stage body 41. Furthermore, the stage 40 is equipped with a bias power supply unit (not shown) that supplies high-frequency power to form a bias for drawing plasma toward the stage 40 during substrate processing. The side wall 15 of the lower chamber 14, which is connected to ground potential, and a baffle plate 100 (described below) function as counter electrodes for this high-frequency bias power.

[0027] Fig. 2 is a schematic plan view showing the lower chamber 14 of the plasma processing apparatus 1 of Fig. 1. As shown in Fig. 1 and Fig. 2, in the plasma processing apparatus 1, the space between the outer periphery of the stage 40 and the sidewall 15 of the processing vessel 10 forms a recessed space 34 through which the processing gas discharged from the processing vessel 10 flows.

[0028] The plasma processing apparatus 1 has exhaust ports 33a for exhausting the processing gas from the internal space 14a in the bottom wall 33 that defines the recessed space 34. Specifically, two exhaust ports 33a are provided on each of a pair of short sides of the stage 40.

[0029] Further, rectangular exhaust chambers 35 are connected to each of the pair of long sides of the processing vessel 10 so as to be adjacent to the recessed space 34 of the processing vessel 10. The plasma processing apparatus 1 has three exhaust ports 33b at the bottom of each exhaust chamber 35. That is, the three exhaust ports 33b are provided on each of the pair of long sides of the stage 40.

[0030] Each exhaust chamber 35 on the pair of long sides has a width slightly larger than the diameter of each exhaust port 33b and is connected along the long side of the processing vessel 10. Fins (not shown) or the like are provided inside each exhaust chamber 35 to guide the processing gas to each exhaust port 33b. Each exhaust chamber 35 is connected to the recessed space 34 via a plurality of communication holes 36 formed in the sidewall 15 of the processing vessel 10.

[0031] Each of the exhaust ports 33b on the pair of long sides is formed in a circular shape. In contrast, each of the exhaust ports 33a on the pair of short sides is formed in a semicircular shape and is provided between the sidewall 15 of the processing vessel 10 and the stage 40. The diameter of each of the exhaust ports 33a, 33b depends on the size of the processing vessel 10, but is preferably set in the range of, for example, approximately 200 mm to 400 mm. Furthermore, each of the exhaust ports 33a, 33b may be provided with an exhaust net 37 to prevent components from falling.

[0032] 1, the plasma processing apparatus 1 includes an exhaust unit 50 connected to each exhaust port 33a, 33b outside the processing chamber 10. The exhaust unit 50 includes an exhaust pipe 51 connected to the exhaust ports 33a, 33b, and an exhaust mechanism 52 provided in the exhaust pipe 51 to exhaust the processing gas (processing gas that has not contributed to the processing of the substrate) inside the processing chamber 10. The exhaust mechanism 52 also exhausts volatile reaction products and the like generated during the processing of the substrate.

[0033] The exhaust mechanism 52 includes, in this order downstream in the flow direction of the processing gas from the exhaust pipe 51, an APC (Automatic Pressure Control) valve 53, a turbo molecular pump (TMP) 54, and a dry pump 55. The exhaust mechanism 52 performs rough evacuation of the processing vessel 10 using the dry pump 55, and then performs vacuum evacuation of the processing vessel 10 using the turbo molecular pump 54. The exhaust mechanism 52 also controls the pressure in the internal space 14a by adjusting the aperture of the APC valve 53.

[0034] The plasma processing apparatus 1 further includes a plurality of baffle plates 100 (first members) arranged around the outer periphery of the stage 40 and between the plasma processing space PCS and the exhaust ports 33a and 33b. Each baffle plate 100 regulates the exhaust path of the processing gas around the stage 40.

[0035] 2, in this embodiment, the multiple baffle plates 100 are arranged at intervals along the circumferential direction of the stage 40. In detail, in the plasma processing apparatus 1, one baffle plate 100 is arranged near each corner on each of the pair of short sides of the stage 40, and one baffle plate 100 is arranged near each corner on each of the pair of long sides of the stage 40.

[0036] Each baffle plate 100 is formed in a plate-like shape and has a rectangular shape in a plan view. The length of the short sides 101, 102 of each baffle plate 100 is approximately equal to the width of the recessed space 34. The length of the long sides 103, 104 of each baffle plate 100 is preferably set to be longer than the diameter of the exhaust ports 33a, 33b in a plan view seen from the vertical direction. This allows each baffle plate 100 to reliably cover the exhaust port 33a. For example, the length of the long sides 103, 104 of each baffle plate 100 is set to be approximately 1.5 to 4 times the diameter of the exhaust ports 33a, 33b.

[0037] 3 is a perspective view showing an assembled state of the baffle plate 100 and the support member 120. As shown in FIG. 3, the baffle plate 100 is supported by support members 120 (second members) that contact the pair of long sides 103, 104 of the baffle plate 100 when installed in the processing vessel 10. The support member 120 includes a first support member 121 that supports one long side 103 of the baffle plate 100 on the sidewall 15 of the processing vessel 10, and a second support member 126 that supports the other long side 104 of the baffle plate 100 on the side surface of the stage 40. The first support member 121 and the second support member 126 are made of a conductive metal material (for example, the same metal material as the processing vessel 10, such as aluminum).

[0038] 2 and 3, the first support member 121 has a vertical plate portion 122 that protrudes vertically upward and closes the recessed space 34 at the center of the processing vessel 10, and a support frame 123 that extends from the vertical plate portion 122 along the sidewall 15 and supports the baffle plate 100. The vertical plate portion 122 closes the recessed space 34 inside the baffle plate 100, thereby restricting the processing gas from flowing toward the exhaust port 33a from the center of the processing vessel 10. As a result, the processing gas in the plasma processing space PCS flows toward the four corners of the processing vessel 10, and then flows around the baffle plate 100 from the corners to be guided to the exhaust port 33a.

[0039] The support frame 123 has a base 124 fixed to the processing vessel 10 by screws or the like, and a protrusion 125 protruding from the base 124 toward the inside of the processing vessel 10 (see also FIG. 4; the illustration is simplified in FIG. 3). The support frame 123 supports the lower surface of the baffle plate 100 on the long side 103 side with the base 124 and the upper surface 123a of the protrusion 125. For this reason, the upper surface 123a is formed flat.

[0040] On the other hand, the second support member 126 is disposed along the side surface of the stage 40 and is fixed to the bottom wall 33 by an appropriate fixing means such as screws. A member for fixing the side surface of the stage 40 (the above-mentioned pedestal 42 or a frame provided on the outer periphery of the pedestal 42) can be used as this second support member 126. A protrusion 127 that protrudes outward from the stage 40 is provided at the upper end of the second support member 126, and an upper surface 127a of the protrusion 127 supports the lower surface of the baffle plate 100 on the long side 104 side. For this reason, the upper surface 127a of the protrusion 127 is formed flat.

[0041] The first support member 121 and the second support member 126 are fixed to the bottom wall 33 or the side wall 15 of the processing vessel 10 (lower chamber 14), and are thereby connected to the ground potential via the processing vessel 10. The first support member 121 and the second support member 126 may be coated with a non-conductive sprayed film at locations other than the contact and support locations of the baffle plate 100. Furthermore, as shown in FIG. 3, the height of the upper surface 123a of the first support member 121 and the height of the upper surface 127a of the second support member 126 may be different from each other. For example, by making the first support member 121 lower than the second support member 126, the plate portion of the baffle plate 100 between the pair of long sides 103 and 104 can be held in an inclined state.

[0042] 4 is a cross-sectional view showing a state in which baffle plates 100 are supported by first support members 121. As shown in FIGS. 3 and 4, each baffle plate 100 has a pair of long sides 103, 104 supported by each support member 120 (first support member 121, second support member 126). This baffle plate 100 is formed of a plate-shaped base material 105 and a thermal sprayed film 110 laminated (coated) on the surface of the base material 105.

[0043] The substrate 105 is not particularly limited as long as it is made of a conductive material, and metals such as aluminum, iron, copper, or alloys thereof can be used. The substrate 105 is formed into a rectangular shape that can be placed in the recessed space 34 by an appropriate processing method such as injection molding, pressing, or cutting. The thickness of the substrate 105 is not particularly limited, but may be set in the range of approximately 3 mm to 6 mm, for example. The thickness of the substrate 105 according to this embodiment is 5 mm.

[0044] The baffle plate 100 supported by the support member 120 has an upper surface 106 facing upward in the vertical direction, a side surface 107 (first surface) extending in a direction approximately perpendicular to the upper surface 106, and a lower surface 108 (second surface) forming the opposite surface to the upper surface 106. The lower surface 108 of the baffle plate 100 is supported by an upper surface 123a of the first support member 121 and an upper surface 127a of the second support member 126 along the direction in which the long sides 103, 104 extend.

[0045] The side surfaces 107 constituting the short sides 101, 102 and long sides 103, 104 of the baffle plate 100 each have a main surface 107a perpendicular to the top surface 106 and bottom surface 108, a first inclined surface 107b inclined below the main surface 107a, and a second inclined surface 107c inclined above the main surface 107a. In particular, for the side surfaces 107 of the long sides 103, 104, the first inclined surface 107b is adjacent to the bottom surface 108, and forms a recess 109 between the support member 120 and the first inclined surface 107b when the support member 120 is in contact with the bottom surface 108. Meanwhile, the second inclined surface 107c is adjacent to the top surface 106. The baffle plate 100 may not have the second inclined surface 107c.

[0046] The first inclined surface 107b is formed to be larger than the second inclined surface 107c. In this embodiment, the length Lm of the main surface 107a and the length Lt of the first inclined surface 107b are set to be approximately the same, or the length Lt of the first inclined surface 107b is set to be longer than the length Lm of the main surface 107a. The length Lt of the first inclined surface 107b may be set to be shorter than the length Lm of the main surface 107a.

[0047] Furthermore, the inclination angle θ of the first inclined surface 107b with respect to the main surface 107a is preferably set in the range of 30° to 60°, for example. In this embodiment, the inclination angle θ is set to 45°. By forming the side surface 107 to have the main surface 107a and the first inclined surface 107b in this manner, the horizontal depth Ds from the main surface 107a to the boundary between the first inclined surface 107b and the lower surface 108 (the depth of the recess 109 from the main surface 107a) becomes sufficiently long. The long depth Ds to the boundary between the first inclined surface 107b and the lower surface 108 makes it difficult for plasma to reach the boundary. For example, the actual dimension of the depth Ds is 1 mm or more, and more preferably in the range of 1 mm to 10 mm.

[0048] The baffle plate 100 has a thermal sprayed film 110 laminated on an upper surface 106 and side surfaces 107 of the substrate 105 formed as described above. On the other hand, the lower surface 108 of the substrate 105 does not have the thermal sprayed film 110 laminated thereon, and forms a substrate exposed surface 111 where the substrate 105 itself is exposed.

[0049] That is, in the baffle plate 100 according to this embodiment, the entire upper surface 106 facing the plasma processing space PCS is covered with the sprayed film 110, and the side surface 107 exposed to the plasma processing space PCS is also covered with the sprayed film 110. The sprayed film 110 is formed on the main surface 107a, the first inclined surface 107b, and the second inclined surface 107c constituting the upper surface 106 and the side surface 107 so as to be continuous with each other without any gaps. The sprayed film 110 is also formed around the entire periphery of the side surface 107, including the short sides 101 and 102 and the long sides 103 and 104 of the baffle plate 100. At least at the boundaries between the first inclined surface 107b and the lower surface 108 on the long sides 103 and 104, the sprayed film 110 has an end portion. Therefore, the boundary between first inclined surface 107b and lower surface 108 on long sides 103 and 104 is also the boundary between sprayed film 110 and exposed surface 111 of the substrate.

[0050] The sprayed film 110 is not particularly limited as long as it is made of a non-conductive material. For example, the material of the sprayed film 110 may be aluminum oxide (alumina), yttrium oxide (yttria), yttrium fluoride, zirconium oxide, mullite (AlO 13 Ceramics such as Si2) and spinel (MgAl2O4) can be used. For example, the thermal spray coating 110 is formed by spraying the thermal spray powder using a carrier gas such as argon gas, generating plasma in the spraying space to form a plasma jet in which the thermal spray powder is melted, and spraying the plasma jet onto the substrate 105. By moving the substrate 105 while spraying the plasma jet, the thermal spray coating 110 can be formed over the entire top surface 106 and side surface 107 of the substrate 105. Instead of a thermal spray coating, the substrate 105 may be coated with Kapton (registered trademark), alumite, or the like.

[0051] The sprayed film 110 thus formed prevents abnormal discharge between the plasma generated in the plasma processing space PCS and the substrate 105. This allows the plasma processing apparatus 1 to perform plasma processing more stably. In particular, the baffle plate 100 has a first inclined surface 107b on the side surface 107 adjacent to the lower surface 108, thereby forming a recess 109 between the baffle plate 100 and the support member 120, and this can reliably prevent plasma from reaching the end of the sprayed film 110.

[0052] On the other hand, the baffle plate 100 has the lower surface 108 of the substrate 105, which contacts the support member 120, as the exposed substrate surface 111, thereby enabling stable electrical conduction between the baffle plate 100 and the support member 120. Since the support member 120 is connected to the ground potential via the processing chamber 10, the baffle plate 100, which is electrically connected to the support member 120, is also connected to the ground potential. As a result, the plasma generated from the processing gas is confined by the electric field formed by the baffle plate 100, and the plasma processing apparatus 1 can suppress the plasma from entering the exhaust section 50 and suppress the occurrence of abnormal discharge in the exhaust section 50.

[0053] The baffle plate 100 is not limited to having the entire lower surface 108 of the substrate 105 as the exposed substrate surface 111, and may have a configuration in which part or all of the lower surface 108 other than the area in contact with the support member 120 is covered with the sprayed film 110. For example, by forming the sprayed film 110 not only on the upper surface 106 and side surface 107 but also on the lower surface 108 in a certain region on the short sides 101 and 102 of the baffle plate 100, abnormal plasma discharge on the short sides 101 and 102 can be more effectively prevented.

[0054] 3, the baffle plate 100 has a plurality of holes 115 through which a plurality of fixing screws 116 are inserted in order to fix the baffle plate 100 to the support member 120. Each fixing screw 116 is threaded into a screw hole (not shown) in the support member 120 via the corresponding hole 115. Furthermore, the plasma processing apparatus 1 is fitted with a non-conductive cap 117 that covers the fixing screws 116. Therefore, the baffle plate 100 can have the periphery of the hole 115 covered by the cap 117 as the substrate exposed surface 111 that is not covered with the thermal sprayed film 110.

[0055] Returning to FIG. 1 , the plasma processing apparatus 1 includes a control unit 60 that controls the overall operation of the apparatus. The control unit 60 is a control computer that includes one or more processors 61, a memory 62, an input / output interface (not shown), and an electronic circuit. The one or more processors 61 may be one or a combination of a CPU, an ASIC, an FPGA, a circuit made up of multiple discrete semiconductors, and the like. The memory 62 includes a nonvolatile memory and a volatile memory, and forms a storage unit of the control unit 60 that stores programs and recipe data. Note that a portion of the memory 62 may be built into the processor 61. A user interface (not shown) of the plasma processing apparatus 1 is connected to the input / output interface. Examples of the user interface include a touch panel, a monitor, a keyboard, and the like. The one or more processors 61 execute the programs stored in the memory 62 and perform plasma processing on substrates G in accordance with the recipe data.

[0056] The plasma processing apparatus 1 of the present disclosure is basically configured as described above, and a method for manufacturing this plasma processing apparatus 1 will be described below with reference to Fig. 5. Fig. 5(A) is a flowchart showing the method for manufacturing the plasma processing apparatus 1, and Fig. 5(B) is a flowchart showing the baffle plate preparation step of Fig. 5(A).

[0057] The manufacturing method of the plasma processing apparatus 1 includes attaching the baffle plate 100 to the processing vessel 10. Specifically, as shown in FIG. 5(A), the manufacturing method includes a processing vessel preparation step (step S1), a baffle plate preparation step (step S2), a support member installation step (step S3), a baffle plate installation step (step S4), and a final assembly step (step S5).

[0058] In the processing vessel preparation step, a processing vessel 10 having a plasma processing space PCS therein is prepared. The upper chamber 13 and the lower chamber 14 of the processing vessel 10 are provided by processing using an appropriate processing method such as injection molding. In the processing vessel preparation step, the upper chamber 13 of the processing vessel 10 is removed, and a stage 40 is installed inside the lower chamber 14. When installing the stage 40, components necessary for the stage 40 (such as a pedestal 42) are also assembled. In addition, various components such as a support frame 11, a dielectric plate 12, a shower head 21, and a high-frequency antenna 28 are installed in the upper chamber 13.

[0059] The baffle plate preparation process prepares a baffle plate 100 that is provided inside the processing vessel 10 and that constitutes part of the internal structure of the processing vessel 10. In this baffle plate preparation process, as shown in FIG. 5(B), a processing method is carried out to process the baffle plate 100 having the thermal sprayed film 110.

[0060] In the processing method, first, a rectangular, plate-shaped base material 105 that will be the base of the baffle plate 100 is formed by processes such as casting, cutting, and pressing (step S2-1).

[0061] Next, the side surfaces 107 of the pair of short sides 101, 102 and the pair of long sides 103, 104 of the base material 105 are cut using a cutting device to form the first inclined surfaces 107b and the second inclined surfaces 107c (step S2-2).

[0062] Thereafter, the upper surface 106 of the substrate 105, the pair of short sides 101, 102, and the side surfaces 107 of the pair of long sides 103, 104 are coated with a sprayed film 110 (step S2-3). This forms the baffle plate 100 having the sprayed film 110. Furthermore, when the sprayed film 110 is formed, the lower surface 108 of the substrate 105 is not coated with the sprayed film 110, so that the lower surface 108 can be left as an exposed substrate surface 111.

[0063] 5(A), in the support member installation step, the first support member 121 and the second support member 126, which are the support members 120, are installed inside the processing vessel 10. Of course, the support members 120 may be installed at the same time as the stage 40 is installed.

[0064] Then, in the baffle plate installation process, the baffle plate 100 is installed on the support member 120. With the lower surface 108 on the long side 103 of the baffle plate 100 in contact with the upper surface 123a of the first support member 121, the baffle plate is fastened with each of the fixing screws 116, and each of the fixing screws 116 is covered with a cap 117. Similarly, with the lower surface 108 on the long side 104 of the baffle plate in contact with the upper surface 127a of the second support member 126, the baffle plate is fastened with each of the fixing screws 116, and each of the fixing screws 116 is covered with a cap 117. As a result, in the installed state, recesses 109 are formed between the first inclined surface 107b on the long side 103 and the upper surface 123a of the first support member 121, and between the first inclined surface 107b on the long side 104 and the upper surface 127a of the second support member 126 (see also FIG. 4).

[0065] Finally, in the final assembly process, the upper chamber 13 is attached to the upper part of the lower chamber 14 on which the baffle plate 100 is installed, thereby completing the processing vessel 10. Furthermore, in the final assembly process, the outer components of the processing vessel 10 (gas supply unit 23, high-frequency power supply 32, chiller 46, exhaust unit 50, etc.) are installed, thereby completing the manufacturing of the plasma processing apparatus 1.

[0066] Next, the operation of the plasma processing apparatus 1 according to this embodiment during plasma processing will be described with reference to FIGS.

[0067] First, the plasma processing apparatus 1 opens the gate valve 16. The substrate G is loaded into the internal space 14a from the loading / unloading port 17 by the transport mechanism, and is then transferred to a plurality of lift pins 43 that are raised and lowered by the lift pin lifting mechanism 44. The lift pins 43 are then lowered to place the substrate G on the mounting surface 411 of the stage 40.

[0068] Next, the plasma processing apparatus 1 supplies processing gas from the gas supply unit 23 and ejects the processing gas into the plasma processing space PCS through the gas ejection holes 21b of the shower head 21. The plasma processing apparatus also evacuates the internal space 14a from the exhaust ports 33a and 33b through the exhaust pipe 51 while controlling the pressure using the APC 54.

[0069] Furthermore, the plasma processing apparatus 1 supplies high-frequency power, for example, 13.56 MHz, from the high-frequency power supply 32 to the high-frequency antenna 28, thereby forming a uniform induction electric field within the plasma processing space PCS via the dielectric plate 12. The induction electric field thus formed converts the processing gas into plasma in the plasma processing space PCS, generating high-density inductively coupled plasma. Using this plasma, the plasma processing apparatus 1 can perform substrate processing, such as plasma etching or plasma ashing, on a predetermined film on the substrate G.

[0070] Furthermore, the processing gas supplied to the plasma processing space PCS but not contributing to the substrate processing is sucked by the turbo molecular pump 54 and exhausted from the exhaust ports 33a and 33b through the exhaust pipe 51. At this time, the baffle plate 100 provided in the recessed space 34 increases the exhaust resistance of the processing gas and, by directing the processing gas to the four corners of the processing vessel 10 as shown in FIG. 2, uniforms the exhaust characteristics of the processing gas (for convenience of illustration, FIG. 2 shows the flow of the processing gas only in the upper right and lower right corners of the processing vessel 10). The plasma generated from the processing gas is confined by the electric field formed by the baffle plate 100 and the processing vessel 10, which are at ground potential, and is therefore prevented from entering the exhaust ports 33a and 33b.

[0071] Furthermore, the sprayed film 110 laminated on the substrate 105 entirely covers the upper surface 106 and the side surface 107 of the baffle plate 100, which are exposed to the plasma processing space PCS. Therefore, the baffle plate 100 can suppress the occurrence of abnormal discharge between the plasma and the substrate 105.

[0072] In particular, the sprayed film 110 covering the side surface 107 of the baffle plate 100 prevents abnormal discharge from occurring on the side surface 107. Furthermore, the baffle plate 100 has a large recess 109 formed between it and the support member 120 by the first inclined surface 107b, and the boundary between the lower surface 108, which serves as the substrate exposed surface 111, and the first inclined surface 107b on which the sprayed film 110 is formed, i.e., the boundary between the sprayed film 110 and the substrate exposed surface 111, is positioned sufficiently far back. This reliably prevents the plasma from wrapping around to the end of the sprayed film 110.

[0073] The technical ideas and effects of the present disclosure explained in the above embodiments will be described below.

[0074] A first aspect of the present disclosure is a plasma processing apparatus 1 for processing a substrate G using plasma, comprising: a processing vessel 10 having a plasma processing space PCS therein; a first member (baffle plate 100) provided inside the processing vessel 10 and having at least one first surface (side surface 107) exposed to the plasma processing space PCS and constituting part of the internal structure of the processing vessel 10; and a second member (support member 120) provided inside the processing vessel 10 and contacting a second surface (lower surface 108) adjacent to the first surface of the first member, wherein the first member has an inclined surface (first inclined surface 107b) that is part of the first surface and adjacent to the second surface, and forms a recess 109 when the second member is in contact with the second surface, and at least the first surface and the inclined surface are continuously coated with a thermal sprayed film 110.

[0075] As described above, the plasma processing apparatus 1 can stably suppress abnormal discharge of the first member by coating the first member (baffle plate 100) exposed to the plasma processing space PCS of the processing chamber 10 with the sprayed film 110. In particular, the first member has an inclined surface (first inclined surface 107b) on the first surface (side surface 107), which makes it possible to make the boundary between the inclined surface and the second surface (lower surface 108) less susceptible to exposure to plasma. This makes it possible to prevent plasma from penetrating the boundary between the sprayed film 110 and the substrate exposed surface 111 and causing abnormal discharge.

[0076] Furthermore, the second surface (lower surface 108) of the first member (baffle plate 100) has an exposed surface (exposed substrate surface 111) that is not coated with the sprayed film 110, at least in the contact area that contacts the second member (support member 120). This allows the plasma processing apparatus 1 to bring the exposed surface of the first member into contact with the second member without the sprayed film 110, and allows the first member and the second member to be electrically integrated.

[0077] The second member is a support member 120 that supports a first member (baffle plate 100), and the first member is electrically connected to the support member 120 via the exposed surface (substrate exposed surface 111). This allows the plasma processing apparatus 1 to electrically connect the first member and the support member 120, and allows the first member to function as a counter electrode for the high frequency waves for bias while suppressing abnormal discharge.

[0078] The processing vessel 10 also includes a stage 40 on which the substrate G is placed, and exhaust ports 33a and 33b located below the stage 40, and the first member is a baffle plate 100 located on the outer periphery of the stage 40, the first surface being a side surface 107 of the baffle plate 100, and the second surface being a bottom surface 108 of the baffle plate 100. This allows the plasma processing apparatus 1 to apply a structure that can stably suppress abnormal discharge to the baffle plate 100 located on the outer periphery of the stage 40.

[0079] The baffle plate 100 also has a third surface adjacent to the first surface (side surface 107) and opposite the second surface (bottom surface 108), the third surface constituting the upper surface (106) of the baffle plate 100 and exposed to the plasma processing space PCS, and the sprayed film 110 is continuously formed across the first surface and the third surface. This allows the plasma processing apparatus 1 to cover the entire surface exposed to the plasma processing space PCS with the sprayed film 110, thereby more reliably reducing abnormal discharge of the baffle plate 100.

[0080] The sprayed film 110 is formed over the entire periphery of the side surface 107 of the baffle plate 100. This allows the plasma processing apparatus 1 to stably prevent the occurrence of abnormal discharge on the side surface 107 of the baffle plate 100.

[0081] Furthermore, the baffle plate 100 is formed in a rectangular shape in a plan view, and the second member (support member 120) supports each of a pair of long sides 103, 104 of the baffle plate 100. As a result, the plasma processing apparatus 1 can stably support the pair of long sides 103, 104 of the baffle plate 100 with the second member, while the sprayed film 110 can suppress abnormal discharge on the side surface of the baffle plate 100.

[0082] The sprayed film 110 is made of non-conductive ceramics. This allows the plasma processing apparatus 1 to easily form the sprayed film 110 on the base material 105 of the baffle plate 100, while effectively suppressing abnormal discharge in the baffle plate 100.

[0083] A second aspect of the present disclosure is a manufacturing method of a plasma processing apparatus 1 for processing a substrate G by plasma, the manufacturing method including the steps of: preparing a processing vessel 10 having a plasma processing space PCS therein; preparing a first member (baffle plate 100) having at least one first surface (side surface 107) exposed to the plasma processing space PCS and constituting a part of the internal structure of the processing vessel 10; and providing a second member (support member 120) contactable with a second surface (lower surface 108) adjacent to the first surface of the first member in the processing vessel 10. and a step of installing the first member on the second member, wherein the step of preparing the first member includes processing to form an inclined surface (first inclined surface 107b) on a portion of the first surface adjacent to the second surface, and processing to continuously coat at least the first surface and the inclined surface with a thermal sprayed film 110 after the inclined surface is formed, and the step of installing the first member on the second member includes contacting the second surface of the first member with the second member to form a recess 109 between the inclined surface and the second member. Even in this case, the manufacturing method of the plasma processing apparatus 1 can stably suppress abnormal discharge in the first member exposed to the plasma processing space PCS of the processing vessel 10.

[0084] The plasma processing apparatus 1 according to the presently disclosed embodiment is illustrative in all respects and not restrictive. Various modifications and improvements to the embodiment are possible without departing from the spirit and scope of the appended claims. The features described in the above-described embodiments may be configured differently and combined within a consistent range. While the presently disclosed embodiment describes a baffle plate as the first component having the thermal sprayed film 110, the first component is not limited to a baffle plate and may be any other component structure in which a connection between multiple components is exposed to plasma. For example, the first component may be an attachment structure for an observation window provided on the sidewall of the processing vessel 10.

[0085] Although the plasma processing apparatus 1 according to the presently disclosed embodiment has been described as an inductively coupled plasma apparatus having a dielectric window, it may be an inductively coupled plasma apparatus having a metal window instead of the dielectric window. Furthermore, the plasma processing apparatus 1 according to the present disclosure can be applied to any type of apparatus, including atomic layer deposition (ALD) apparatus, capacitively coupled plasma (CCP), inductively coupled plasma (ICP), radial line slot antenna (RLSA), electron cyclotron resonance plasma (ECR), and helicon wave plasma (HWP). [Explanation of symbols]

[0086] 1. Plasma processing equipment 10 Processing container 100 Baffle plate 107 Side 107b 1st slope 108 Bottom surface 109 Recess 110 Thermal spray coating 120 Support member G board PCS plasma processing space

Claims

1. A plasma processing apparatus for processing a substrate with plasma, a processing vessel having a plasma processing space therein; a first member provided inside the processing vessel, the first member having at least one first surface exposed to the plasma processing space, and constituting a part of an internal structure of the processing vessel; a second member provided inside the processing chamber and in contact with a second surface of the first member adjacent to the first surface, the first member has an inclined surface that is a part of the first surface and is adjacent to the second surface, and that forms a recess when the second member is in contact with the second surface; At least the first surface and the inclined surface are coated with a thermal sprayed film in a continuous manner, the second surface of the first member has an exposed surface on which no thermal spray coating is applied at least in a contact area that contacts the second member; the second member is a support member that supports the first member, the first member is electrically connected to the support member via the exposed surface; Plasma processing equipment.

2. A plasma processing apparatus for processing a substrate with plasma, comprising: a processing vessel having a plasma processing space therein; a first member provided inside the processing vessel, the first member having at least one first surface exposed to the plasma processing space, and constituting a part of an internal structure of the processing vessel; a second member provided inside the processing chamber and in contact with a second surface of the first member adjacent to the first surface, the first member has an inclined surface that is a part of the first surface and is adjacent to the second surface, and that forms a recess when the second member is in contact with the second surface; At least the first surface and the inclined surface are coated with a thermal sprayed film in a continuous manner, The processing vessel comprises: a stage on which the substrate is placed; an exhaust port disposed below the stage, the first member is a baffle plate disposed on the outer periphery of the stage, the first surface is a side surface of the baffle plate, and the second surface is a bottom surface of the baffle plate; Plasma processing equipment.

3. the baffle plate has a third surface adjacent to the first surface and opposite to the second surface, the third surface constituting an upper surface of the baffle plate and exposed to the plasma processing space; the thermal sprayed film is continuously coated over the first surface and the third surface; The plasma processing apparatus according to claim 2 .

4. The thermal sprayed film is formed over the entire periphery of the side surface of the baffle plate.

4. The plasma processing apparatus according to claim 2 or 3.

5. The baffle plate is formed in a rectangular shape in a plan view, the second member supports each of a pair of long sides of the baffle plate; 5. The plasma processing apparatus according to claim 2, wherein the plasma processing apparatus is a plasma processing apparatus.

6. The thermal sprayed film is formed of a non-conductive ceramic. The plasma processing apparatus according to claim 1 .

7. A method for manufacturing a plasma processing apparatus for processing a substrate with plasma, comprising: preparing a processing vessel having a plasma processing space therein; preparing a first member having at least one first surface exposed to the plasma processing space and constituting a part of an internal structure of the processing vessel; placing a second member inside the processing vessel, the second member being capable of contacting a second surface of the first member adjacent to the first surface; and placing the first member on the second member; The step of preparing the first member includes processing to form an inclined surface on a portion of the first surface that is adjacent to the second surface; After forming the inclined surface, at least the first surface and the inclined surface are continuously coated with a thermal sprayed film, and an exposed surface not coated with the thermal sprayed film is formed at least in a contact area of ​​the second surface of the first member that contacts the second member, In the step of placing the first member on the second member, the exposed surface of the second surface of the first member is brought into contact with the second member, thereby supporting the first member with the second member and electrically connecting the first member and the second member, and forming a recess by the inclined surface and the second member. A method for manufacturing a plasma processing apparatus.

8. A method for manufacturing a plasma processing apparatus for processing a substrate with plasma, comprising: preparing a processing vessel having a plasma processing space therein; preparing a first member having at least one first surface exposed to the plasma processing space and constituting a part of an internal structure of the processing vessel; placing a second member inside the processing vessel, the second member being capable of contacting a second surface of the first member adjacent to the first surface; and placing the first member on the second member; The processing vessel comprises: a stage on which the substrate is placed; an exhaust port disposed below the stage, the first member is a baffle plate disposed on the outer periphery of the stage, the first surface is a side surface of the baffle plate, and the second surface is a bottom surface of the baffle plate; The step of preparing the first member includes processing to form an inclined surface on a portion of the first surface that is adjacent to the second surface; After forming the inclined surface, a process is performed in which at least the first surface and the inclined surface are continuously coated with a thermal sprayed film; In the step of placing the first member on the second member, the second surface of the first member is brought into contact with the second member, thereby forming a recess by the inclined surface and the second member. A method for manufacturing a plasma processing apparatus.

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