Substrate processing apparatus and substrate processing method

Abstract

To provide a technique for preventing a process gas supplied into a process chamber to go into a side of a lower face of a work-holder table.SOLUTION: A substrate processing apparatus comprises: a process chamber; a rotation table rotatably provided in the process chamber; a work-holder table rotatable relatively to the rotation table at a position away from a rotation center of the rotation table; a process gas-supplying part for supplying a process gas to a substrate set on the work-holder table; a separation gas-supplying part for supplying a separation gas to a plurality of areas adjacent to a processing region supplied with the process gas to form a plurality of separation areas; and a gas-exhausting part for exhausting gas through one or more air outlets communicating with the inside of the process chamber. The air outlet is disposed in the processing region between the separation areas vertically above the rotation table.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present disclosure relates to a substrate processing apparatus and a substrate processing method. [Background technology]

[0002] Patent Document 1 discloses a substrate processing apparatus including a turntable that can rotate within a processing vessel and multiple mounting tables that are provided on the turntable and can rotate (spin) relative to the turntable. For example, the substrate processing apparatus rotates the turntable and mounting tables while supplying multiple types of processing gases into the processing vessel, thereby depositing films on substrates mounted on each mounting table.

[0003] The substrate processing apparatus disclosed in Patent Document 1 includes a separation gas supply unit that supplies a separation gas between multiple types of process gases, and a gas exhaust unit that exhausts each process gas and the separation gas from the process vessel. The separation gas separates the first process gas from the second process gas, thereby suppressing mixing of the first process gas and the second process gas in the process vessel. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Japanese Patent Publication No. 2021-111758 Summary of the Invention [Problem to be solved by the invention]

[0005] The present disclosure provides a technique that can prevent a process gas supplied into a process chamber from flowing around to the underside of a mounting table. [Means for solving the problem]

[0006] According to one aspect of the present disclosure, there is provided a substrate processing apparatus comprising: a processing vessel into which a substrate is transported; a rotary table rotatably arranged inside the processing vessel; a mounting table on which the substrate is placed, the mounting table being rotatable relative to the rotary table at a position spaced apart from the center of rotation of the rotary table; a processing gas supply unit arranged vertically above the rotary table and supplying a processing gas to the substrate placed on the mounting table; a separation gas supply unit supplying a separation gas to multiple regions adjacent to the processing region to which the processing gas is supplied, thereby forming multiple separation regions; and a gas exhaust unit having one or more exhaust ports communicating with the interior of the processing vessel and exhausting gas through the exhaust ports, wherein the exhaust ports are arranged in the processing region between the multiple separation regions and vertically above the rotary table. [Effects of the Invention]

[0007] According to one aspect, the processing gas supplied into the processing chamber can be prevented from flowing around to the underside of the mounting table. [Brief explanation of the drawings]

[0008] [Figure 1] 1 is a vertical cross-sectional view showing an example of the configuration of a film forming apparatus according to an embodiment; [Figure 2] 2 is a plan view showing the configuration inside a processing chamber of the film forming apparatus of FIG. 1. FIG. [Figure 3] 2 is a perspective view showing the configuration of a rotary table and a mounting table of the film forming apparatus of FIG. 1. FIG. [Figure 4] 1 is a flowchart showing a processing flow of a substrate processing method. [Figure 5] 5A and 5B are schematic explanatory views showing the gas exhaust operation by the gas exhaust unit. DETAILED DESCRIPTION OF THE INVENTION

[0009] Hereinafter, embodiments of the present disclosure will be described with reference to the drawings. In the drawings, the same components are denoted by the same reference numerals, and redundant explanations may be omitted.

[0010] [Substrate Processing Apparatus] A film forming apparatus 1 for forming a film on a substrate W, which is an example of a substrate processing apparatus, will be described with reference to FIGS. 1 to 3. FIG. 1 is a vertical cross-sectional view showing an example of the configuration of the film forming apparatus 1 according to one embodiment. FIG. 2 is a plan view showing the configuration inside a processing chamber 11 of the film forming apparatus 1 of FIG. 1. For ease of explanation, a top plate is not shown in FIG. 2. FIG. 3 is a perspective view showing the configuration of a turntable 21 and a mounting table 211 of the film forming apparatus 1 of FIG. 1.

[0011] The film forming apparatus 1 includes a processing section 10, a rotation driving device 20, and a control section 90.

[0012] The processing section 10 performs a film formation process to form a film on a substrate W. The processing section 10 includes a processing vessel 11, a gas inlet section 12, a gas exhaust section 13, a transfer port 14, a heating section 15, and a cooling section 16.

[0013] The processing vessel 11 is a vacuum vessel capable of reducing the pressure inside. The processing vessel 11 is formed as a flat housing having a substantially circular planar shape, and can accommodate multiple substrates W in its internal space. The substrates W may be, for example, semiconductor wafers. The processing vessel 11 includes a main body 111, a top plate 112, a sidewall 113, and a bottom plate 114 (FIG. 1). The main body 111 has a cylindrical shape. The top plate 112 is detachably disposed on the upper surface of the main body 111. The main body 111 and the top plate 112 are hermetically sealed together by a seal portion 115. The sidewall 113 has a cylindrical shape and is hermetically connected to the lower surface of the main body 111. The bottom plate 114 is hermetically connected to the bottom surface of the sidewall 113.

[0014] The gas introduction unit 12 includes a source gas nozzle 121 and a reaction gas nozzle 122, which are the process gas supply unit 12a, and separation gas nozzles 123 and 124, which are the separation gas supply unit 12b (FIG. 2). The source gas nozzle 121, the reaction gas nozzle 122, and the separation gas nozzles 123 and 124 are arranged above a turntable 21 (described later) at intervals along the circumferential direction of the process vessel 11 (the direction indicated by arrow A in FIG. 2). In the illustrated example, the separation gas nozzle 123, the source gas nozzle 121, the separation gas nozzle 124, and the reaction gas nozzle 122 are arranged in this order clockwise (the rotation direction of the turntable 21) from the transfer port 14. The source gas nozzle 121, the reaction gas nozzle 122, and the separation gas nozzles 123 and 124 each have gas inlet ports 121p, 122p, 123p, and 124p (FIG. 2) at their base ends for introducing various gases. Gas introduction ports 121p, 122p, 123p, and 124p are fixed to the sidewall of main body 111 and protrude to the outside of main body 111. Source gas nozzle 121, reaction gas nozzle 122, and separation gas nozzles 123 and 124 are inserted into processing vessel 11 from the sidewall of main body 111 and extend radially inward of main body 111. Source gas nozzle 121, reaction gas nozzle 122, and separation gas nozzles 123 and 124 are made of, for example, quartz, and are arranged parallel to turntable 21.

[0015] The source gas nozzle 121 is connected to a source gas supply source (not shown) via piping and a flow rate controller (not shown). The source gas may be, for example, a silicon-containing gas or a metal-containing gas. The source gas nozzle 121 is provided with a plurality of discharge holes (not shown) that open toward the turntable 21. The plurality of discharge holes are arranged at intervals along the axial direction of the source gas nozzle 121. The region below the source gas nozzle 121 serves as a source gas adsorption region P1 for adsorbing the source gas onto the substrate W.

[0016] The reactive gas nozzle 122 is connected to a reactive gas supply source (not shown) via piping and a flow rate controller (not shown). The reactive gas may be, for example, an oxidizing gas or a nitriding gas. The reactive gas nozzle 122 is provided with a plurality of discharge holes (not shown) that open toward the turntable 21. The plurality of discharge holes are arranged at intervals along the axial direction of the reactive gas nozzle 122. The region below the reactive gas nozzle 122 serves as a reactive gas supply region P2 that oxidizes or nitrides the source gas adsorbed on the substrate W in the source gas adsorption region P1. In this embodiment, the process gas used to process the substrate W corresponds to the above-mentioned source gas and reactive gas.

[0017] The separation gas nozzles 123, 124 are both connected to a separation gas supply source (not shown) via piping and a flow rate controller (not shown). The separation gas may be, for example, an inert gas such as argon (Ar) gas or nitrogen (N2) gas. The separation gas nozzles 123, 124 are provided with a plurality of discharge holes (not shown) that open toward the rotary table 21. The plurality of discharge holes are arranged at intervals along the axial direction of the separation gas nozzles 123, 124.

[0018] 2, two convex portions 17 are provided in processing vessel 11. Convex portion 17, together with separation gas nozzles 123 and 124, constitutes separation region D, and is attached to the underside of top plate 112 so as to protrude toward turntable 21. Each convex portion 17 has a fan-shaped planar shape with its top cut into an arc, with its inner arc connected to protruding portion 18 and its outer arc aligned along the sidewall of processing vessel 11.

[0019] Gas exhaust unit 13 exhausts the processing gas and separation gas supplied into processing vessel 11 to the outside of processing vessel 11. The configuration of gas exhaust unit 13 will be described in detail later.

[0020] The transfer port 14 is provided in a side wall of the main body 111 (FIG. 2). Through the transfer port 14, the substrate W is transferred between the rotary table 21 in the processing vessel 11 and a transfer arm 14a outside the processing vessel 11. The transfer port 14 is opened and closed by a gate valve (not shown).

[0021] The heating unit 15 includes a fixed shaft 151, a heater support unit 152, and a heater 153 (FIG. 1). The fixed shaft 151 has a cylindrical shape with its central axis at the center of the processing vessel 11. The fixed shaft 151 is provided inside a rotation shaft 23 of a rotation drive device 20 (described later) and penetrates a bottom plate 114 of the processing vessel 11. The heater support unit 152 is fixed to an upper part of the fixed shaft 151 and has a disk shape. The heater support unit 152 supports the heater 153 on its upper surface. The heater 153 may be provided on the main body 111 in addition to on the upper surface of the heater support unit 152. The heater 153 generates heat when supplied with power from a power source (not shown), and heats the substrate W.

[0022] The cooling unit 16 includes fluid flow paths 161a-164a, chiller units 161b-164b, inlet pipes 161c-164c, and outlet pipes 161d-164d. The fluid flow paths 161a-164a are formed inside the main body 111, the top plate 112, the bottom plate 114, and the heater support portion 152, respectively. The chiller units 161b-164b output a temperature-adjusted fluid. The temperature-adjusted fluid output from the chiller units 161b-164b flows and circulates through the inlet pipes 161c-164c, the fluid flow paths 161a-164a, and the outlet pipes 161d-164d in this order. This adjusts the temperatures of the main body 111, the top plate 112, the bottom plate 114, and the heater support portion 152. For example, water or a fluorine-based fluid such as Galden (registered trademark) can be used as the temperature-adjusted fluid.

[0023] The rotary drive device 20 includes a rotary table 21 , a housing box 22 , a rotary shaft 23 , a revolution motor 24 , and an outer cylinder 25 .

[0024] The turntable 21 is provided in the processing vessel 11 and has a rotation center at the center of the processing vessel 11. The turntable 21 has, for example, a disk shape and is made of quartz. On the upper surface of the turntable 21, a plurality of (for example, five) mounting tables 211 are provided along the rotation direction (circumferential direction). The turntable 21 is connected to the storage box 22 via a connection part 214 (FIG. 3).

[0025] Each mounting table 211 has a disk shape slightly larger than the substrate W and is made of, for example, quartz. The substrate W is placed on each mounting table 211. Each mounting table 211 is connected to a rotation motor 213 via a rotation shaft 212 and is configured to be rotatable relative to the turntable 21 (FIG. 1).

[0026] The rotation shaft 212 connects the underside of the mounting table 211 to a rotation motor 213 housed in the storage box 22, and transmits the power of the rotation motor 213 to the mounting table 211. The rotation shaft 212 passes through the ceiling 222 of the storage box 22 and the turntable 21. A seal 263 is provided near the penetration part of the ceiling 222 of the storage box 22, and maintains an airtight state inside the storage box 22. The seal 263 includes, for example, a magnetic fluid seal.

[0027] The rotation motor 213 is a rotation source that rotates the mounting table 211 via the rotation shaft 212, thereby rotating the substrate W around the center of the mounting table 211. The rotation motor 213 is preferably, for example, a servo motor.

[0028] The connection portion 214 connects the lower surface of the turntable 21 to the upper surface of the storage box 22 (FIG. 3). A plurality of connection portions 214 are provided along the circumferential direction of the turntable 21.

[0029] The storage box 22 is provided below the turntable 21 in the processing vessel 11. The storage box 22 is connected to the turntable 21 via a connection part 214 and rotates integrally with the turntable 21. The storage box 22 may be configured to be movable up and down within the processing vessel 11 by an elevation mechanism (not shown). The storage box 22 has a main body part 221 and a ceiling part 222.

[0030] The main body 221 is formed in a concave shape in a vertical cross section (FIG. 1), and is formed in a ring shape along the rotation direction of the turntable 21. The ceiling 222 is provided on the upper surface of the main body 221 so as to cover the opening of the main body 221. As a result, the main body 221 and the ceiling 222 form a rotation container 223 that is isolated from the inside of the processing vessel 11.

[0031] The rotary container 223 is formed in a rectangular shape in a vertical cross section and has a ring shape along the rotation direction of the turntable 21. The rotary container 223 houses the rotation motor 213. The main body 221 is formed with a communication passage 224 that connects the rotary container 223 to the outside of the film formation apparatus 1. This allows air to be introduced into the rotary container 223 from the outside of the film formation apparatus 1, cooling the inside of the rotary container 223 and maintaining it at atmospheric pressure. In order to rotatably dispose the rotary container 223, the processing vessel 11 has a rotation source housing space 19 surrounded by a side wall body 113, a bottom plate 114, and a heating unit 15.

[0032] The rotating shaft 23 is fixed to the lower part of the storage box 22. The rotating shaft 23 is provided to penetrate the bottom plate 114 of the processing vessel 11. The rotating shaft 23 transmits the power of the revolution motor 24 to the rotating table 21 and the storage box 22, causing the rotating table 21 and the storage box 22 to rotate together. A seal unit 154 is provided between the outer wall of the fixed shaft 151 and the inner wall of the rotating shaft 23 of the rotation drive device 20. This allows the rotating shaft 23 to rotate relative to the fixed shaft 151 while maintaining an airtight state inside the processing vessel 11. The seal unit 154 includes, for example, a magnetic fluid seal.

[0033] An outer cylinder 25 of the rotation drive device 20 is connected to the lower surface of the center side of the bottom plate 114 of the processing vessel 11. The outer cylinder 25 supports the processing vessel 11 together with a fixed shaft 151 of the processing vessel 11. A seal unit 116 is provided between the rotation shaft 23 and the outer cylinder 25 to maintain an airtight state inside the processing vessel 11. The seal unit 116 includes, for example, a magnetic fluid seal.

[0034] The gas introduction unit 12 includes an inert gas supply unit 27 that supplies an inert gas to the axial space between the rotation shaft 23 and the outer cylinder 25. The inert gas supply unit 27 has a gas supply device 27a outside the processing vessel 11, and supplies the inert gas to the axial space under the control of the control unit 90. The axial space is in communication with the rotation source accommodating space 19, and the inert gas supplied to the axial space flows into the rotation source accommodating space 19.

[0035] Furthermore, a passage 231 is formed inside the rotating shaft 23. The passage 231 is connected to the communication passage 224 of the housing box 22, and functions as a fluid flow path for introducing air into the housing box 22. The passage 231 also functions as a wiring duct for introducing power lines and signal lines for driving the rotation motor 213 into the housing box 22. The passages 231 are provided in the same number as the rotation motors 213, for example.

[0036] The control unit 90 controls each part of the film forming apparatus 1. The control unit 90 may be, for example, a computer having a processor, memory, and input / output interface (not shown). In addition, computer programs that cause each part of the film forming apparatus 1 to operate are stored in memory. The memory may be, for example, a flexible disk, a compact disk, a hard disk, a flash memory, a DVD, or the like.

[0037] [Configuration of gas exhaust section 13] Next, the configuration of the gas exhaust unit 13 of the film forming apparatus 1 will be described in detail with reference to FIGS. 1 and 2. To exhaust gas from the internal space of the processing chamber 11, the gas exhaust unit 13 has multiple exhaust ports 131a, 131b, and 137a arranged above the substrate W placed on the mounting table 211 in the source gas adsorption region P1 and the reactive gas supply region P2. This prevents gas from flowing under the mounting table 211 in the source gas adsorption region P1 and the reactive gas supply region P2. On the other hand, the gas exhaust unit 13 allows the supplied separation gas to flow under the mounting table 211 in the multiple separation regions D.

[0038] Specifically, the gas exhaust section 13 includes an outer exhaust structure 131 that orbits along the circumferential direction of the processing vessel 11 radially outside the rotary table 21, and an axial-side exhaust section 137 that is provided adjacent to the protrusion 18 in the raw material gas adsorption region P1.

[0039] The outer exhaust structure 131 includes a ring member 132 provided to contact the bottom wall of the main body 111 , a spacer 133 stacked on the ring member 132 , and a cover member 134 stacked on the spacer 133 .

[0040] In a plan view, the ring member 132 has an endless shape that goes around the inner circumferential surface of the main body 111. In a side cross-sectional view, the ring member 132 is formed in a concave shape that is open at the top, and has a gas flow path 132a on the inside. The gas flow path 132a is continuous around the entire circumferential direction of the ring member 132.

[0041] The ring member 132 also has an external communication port 132b in a predetermined position on the bottom wall thereof, the external communication port 132b communicating with the gas flow path 132a. The external communication port 132b communicates with a flow path of an exhaust pipe 135 provided outside the processing vessel 11 via a communication hole 111a formed in the main body 111. The exhaust pipe 135 is provided with an exhaust device 136 that circulates gas through the exhaust pipe 135. The exhaust device 136 is configured with, for example, a pump that sucks gas from inside the processing vessel 11, a flow rate control valve that adjusts the flow rate of the exhausted gas, etc.

[0042] The spacer 133 is provided around the entire circumferential direction of the ring member 132 and covers the upper part of the gas flow path 132a. In a side cross-sectional view, the spacer 133 is disposed just to the side of (at the same height as) the turntable 21. The inner circumferential surface of the spacer 133 is positioned radially outward of the inner circumferential surface of the ring member 132 and is not in contact with the turntable 21. As a result, the spacer 133 positions the cover member 134 at a position slightly higher than the turntable 21. An exhaust path 133a is formed at an appropriate position of the spacer 133, which connects a first exhaust port 131a and a second exhaust port 131b of the cover member 134, which will be described later, with the gas flow path 132a of the ring member 132.

[0043] The cover member 134 is formed as an annular plate provided around the entire circumferential circumference of the spacer 133. When the outer exhaust structure 131 is in an assembled state, the lower surface of the cover member 134 is positioned vertically above the upper surface of the turntable 21. The cover member 134 has an inner edge that protrudes radially inward relative to the inner circumferential surface of the spacer 133. As a result, the inside of the cover member 134 covers the upper part of the outer edge of the turntable 21 without contacting it.

[0044] The outer exhaust structure 131 has a first exhaust port 131a and a second exhaust port 131b penetrating the cover member 134 (see also FIG. 2). Because the cover member 134 is located higher than the turntable 21, the first exhaust port 131a and the second exhaust port 131b can exhaust gas from inside the processing chamber 11 vertically above the turntable 21. The gas taken in through the first exhaust port 131a and the second exhaust port 131b flows into the gas flow path 132a via the exhaust path 133a, and is further discharged into the flow path of the exhaust piping 135 via the external communication port 132b and the communication hole 111a.

[0045] 2, the first exhaust port 131a is formed in a first exhaust region E1 that is adjacent to the radially outer side of the source gas adsorption region P1 and communicates with the source gas adsorption region P1. The first exhaust port 131a is located downstream of the source gas adsorption region P1 in the rotation direction (clockwise in FIG. 2) of the turntable 21. Therefore, the first exhaust port 131a allows the source gas supplied to the source gas adsorption region P1 and the separation gas supplied to the separation region D adjacent to the source gas adsorption region P1 to pass through.

[0046] The second exhaust port 131b is formed in a second exhaust region E2 that is adjacent to the radially outer side of the reaction gas supply region P2 and communicates with the reaction gas supply region P2. The second exhaust port 131b is located downstream of the reaction gas supply region P2 in the rotation direction (clockwise in FIG. 2) of the turntable 21. Therefore, the second exhaust port 131b allows the reaction gas supplied to the reaction gas supply region P2 and the separation gas supplied to the reaction gas supply region P2 to pass through.

[0047] 1 and 2, the shaft-side exhaust section 137 is provided adjacent to and radially inward of the source gas adsorption region P1. The shaft-side exhaust section 137 includes an upper exhaust port 137a formed in the top plate 112 and an exhaust port 138 communicating with the upper exhaust port 137a. The shaft-side exhaust section 137 may be provided not only in the source gas adsorption region P1 but also radially inward of the reaction gas supply region P2, or may be provided only in the reaction gas supply region P2.

[0048] The upper exhaust port 137a is located radially inward of the mounting table 211 of the turntable 21 and penetrates the top plate 112. Therefore, the upper exhaust port 137a does not face the substrate W placed on the mounting table 211. The upper exhaust port 137a is formed at a position overlapping with an imaginary radial line extending from the center of the processing chamber 11 (the rotation center of the turntable 21) toward the first exhaust port 131a.

[0049] The exhaust port 138 is provided to protrude upward from the top plate 112 so as to be connected to an exhaust pipe 139 outside the processing vessel 11. The exhaust port 138 has an internal flow path 138a that connects an upper exhaust outlet 137a to the flow path of the exhaust pipe 139. The exhaust pipe 139 is connected to an exhaust device 136 outside the processing vessel 11.

[0050] The gas exhaust unit 13 described above can guide the source gas and separation gas above the turntable 21 in the source gas adsorption region P1. Similarly, the gas exhaust unit 13 can guide the reaction gas and separation gas above the turntable 21 in the reaction gas supply region P2.

[0051] [Substrate Processing Method] The film forming apparatus 1 according to this embodiment is basically configured as described above, and its operation (substrate processing method) will be described below with reference to Figures 4 and 5. Figure 4 is a flowchart showing the process flow of the substrate processing method. Figure 5 is a schematic explanatory diagram showing the gas exhaust operation by the gas exhaust unit 13, where (A) shows the gas flow in the source gas adsorption region P1 and (B) shows the gas flow in the separation region D.

[0052] 4, the substrate processing method includes a loading step (step S1), a depressurization step (step S2), a rotation step (step S3), a separation gas supply step (step S4), a processing gas supply step (step S5), and a loading step (step S6). The control unit 90 controls each component of the film forming apparatus 1 to perform each step at an appropriate timing.

[0053] In the loading step (step S1), the control unit 90 causes the transfer arm 14a to enter through the transfer port 14 with the gate valve open, and transfers (places) the substrates onto each mounting table 211 of the turntable 21 provided inside the processing vessel 11. Then, after the substrates W are placed on each mounting table 211, the control unit 90 closes the gate valve to hermetically seal the processing vessel 11.

[0054] In the depressurization step (step S2), the control unit 90 operates the gas exhaust unit 13 to exhaust gas from inside the processing vessel 11 through each exhaust port (first exhaust port 131a, second exhaust port 131b, upper exhaust port 137a) that communicates with the interior of the processing vessel 11. As a result, the internal space of the processing vessel 11 is depressurized to a predetermined pressure. Then, the control unit 90 continuously controls the operation of the gas exhaust unit 13 to maintain the pressure reduced in the depressurization step until just before the start of the unloading step.

[0055] In the rotation step (step S3), the control unit 90 rotates (revolves) the turntable 21. In addition, the control unit 90 rotates (spins) each mounting table 211 on which the substrate W is placed relative to the turntable 21.

[0056] In the separation gas supplying step (step S4), the control unit 90 supplies a separation gas from each separation gas nozzle 123, 124 provided inside the processing vessel 11 to form a plurality of separation regions D.

[0057] Then, the control unit 90 performs a process gas supply step (step S5) to supply a raw material gas from the raw material gas nozzle 121 and a reactive gas from the reactive gas nozzle 122 as a film formation process (substrate processing) on ​​the substrate W. The process gas supply step may be performed simultaneously with the separation gas supply step.

[0058] Each substrate W revolves and rotates on the turntable 21, adsorbs the source gas when passing through the source gas adsorption region P1, and the reactive gas reacts with the source gas when passing through the reactive gas supply region P2. In the film formation process, steps S2 to S5 are continued for a predetermined time, thereby forming a film having a desired thickness on the surface of the substrate W.

[0059] When the film formation process is completed, the control unit 90 reduces the pressure in the processing vessel 11 and stops the supply of the processing gas, increases the pressure inside the processing vessel 11, and stops the supply of the separation gas at an appropriate pressure state. The control unit 90 also stops the rotation of the turntable 21 and each mounting table 211, allowing the substrate W on each mounting table 211 to be removed.

[0060] Then, in the unloading step (step S6), the control unit 90 causes the transfer arm 14a to enter through the transfer port 14 while the gate valve is open, and unloads the substrates W from the mounting stages 211 of the turntable 21.

[0061] From the depressurization step (step S2) to the process gas supply step (step S6) of the substrate processing method described above, gas exhaust unit 13 continues to exhaust gas from inside process vessel 11. In particular, during the process gas supply step, the process gas supplied into process vessel 11 is continuously exhausted via multiple exhaust ports 131a, 131b, and 137a. Next, the flows of the process gas and separation gas when gas exhaust unit 13 exhausts gas (depressurization step) during the film formation process (when supplying the process gas and separation gas) will be described.

[0062] 5(B), during substrate processing, the separation gas nozzles 123 and 124 eject a separation gas from above the turntable 21 toward the substrate W placed on the mounting table 211. As described above, the separation region D is provided with the convex portion 17, thereby narrowing the space between the convex portion 17 and the turntable 21. This increases the internal pressure due to the separation gas, preventing the inflow of processing gas (source gas, reactive gas) into the separation region D.

[0063] In addition, an inert gas is supplied by an inert gas supply unit 27 to the rotation source accommodation space 19 below the main body 111. The inert gas flows into the space between the turntable 21 and the heater 153 (hereinafter referred to as the below-table space 28) through the gap between the rotation shaft 212 that supports the mounting table 211 and the main body 111 and heating unit 15.

[0064] A portion of the separation gas supplied to the separation region D flows radially outward above the turntable 21. The other portion of the separation gas passes through the gap between the turntable 21 and the mounting table 211, flows around the underside of the mounting table 211, and then flows toward the below-table space 28. In the below-table space 28, the separation gas mixes with the inert gas from the rotation source housing space 19. The separation gas and the inert gas flow radially outward in the below-table space 28.

[0065] 5(A), in the source gas adsorption region P1, the source gas nozzle 121 ejects the source gas from above the turntable 21 toward the substrate W placed on the mounting table 211. As a result, the source gas is adsorbed onto the upper surface of the substrate W. Also, an inert gas flows into the below-table space 28 in the source gas adsorption region P1 from the rotation source accommodation space 19 below the main body 111.

[0066] Here, the gas exhaust unit 13 according to this embodiment has a first exhaust port 131a at an adjacent position on the radially outer side in the source gas adsorption region P1, and an upper exhaust port 137a at an adjacent position on the radially inner side. The first exhaust port 131a and the upper exhaust port 137a are disposed vertically above the turntable 21 (on the side adjacent to the source gas nozzle 121). Therefore, in the source gas adsorption region P1, a gas flow is formed that flows above the under-table space 28.

[0067] Specifically, part of the inert gas that has flowed into the under-table space 28 moves to the underside of the mounting table 211 and heads toward the space above the turntable 21 through the gap between the turntable 21 and the mounting table 211. The other part of the inert gas that has flowed into the under-table space 28 moves radially outward from the under-table space 28 and then heads toward the space above the turntable 21 through the gap between the turntable 21 and the ring member 132.

[0068] In the space above the turntable 21, the source gas and the inert gas supplied from the source gas nozzle are mixed. The source gas and the inert gas are directed toward the first exhaust port 131a and the upper exhaust port 137a under the suction action of the exhaust device 136 via the first exhaust port 131a and the upper exhaust port 137a. The first exhaust port 131a is disposed radially outward of the turntable 21 and at a higher position than the turntable 21, thereby enabling the source gas and the inert gas to be stably guided upward. Similarly, the upper exhaust port 137a is disposed radially inward of the mounting tables 211 and at a higher position than the turntable 21, thereby enabling the source gas and the inert gas to be stably guided upward.

[0069] If the first exhaust port were located vertically below the turntable 21, the source gas supplied to the space above the turntable 21 would move downward. At this time, the source gas would be more likely to find its way into the gap between the mounting table 211 and the turntable 21. In particular, in a structure in which the mounting table 211 rotates (spins), a gap always exists between the mounting table 211 and the turntable 21. Therefore, if the first exhaust port is lower than the turntable 21, the source gas would find its way around to the underside of the mounting table 211. The source gas that has found its way around to the underside of the mounting table 211 would adhere to the underside of the mounting table 211, which would more likely affect the rotation of the mounting table 211.

[0070] In contrast, the film forming apparatus 1 according to this embodiment has the first exhaust port 131a located vertically above the turntable 21, thereby preventing the source gas from entering the gap between the mounting table 211 and the turntable 21. That is, an inert gas (or a separation gas from the separation region D) is introduced into the gap between the mounting table 211 and the turntable 21, and this gas flows directly into the space above the turntable 21 and is introduced to the first exhaust port 131a on the upper side.

[0071] In particular, the film forming apparatus 1 according to this embodiment is provided with the upper exhaust port 137a also on the radially inner side, so that the source gas and inert gas on the rotation center side of the turntable 21 can be smoothly exhausted from the upper exhaust port 137a without being directed radially outward. Therefore, the source gas does not remain on the rotation center side of the turntable 21, and the source gas can be more reliably prevented from flowing around to the underside of the mounting table 211.

[0072] Furthermore, the film forming apparatus 1 can guide the reactive gas and the inert gas upward through the second exhaust port 131b, which is disposed vertically above the turntable 21 in the reactive gas supply region P2. Therefore, the reactive gas and the inert gas can be prevented from flowing around to the underside of the mounting table 211 in the reactive gas supply region P2 as well.

[0073] The film forming apparatus 1 may be configured such that the first exhaust port 131a of the source gas adsorption region P1 is higher than the turntable 21, while the second exhaust port 131b of the reactive gas supply region P2 is lower than the turntable 21. Conversely, the film forming apparatus 1 may be configured such that the second exhaust port 131b of the reactive gas supply region P2 is higher than the turntable 21, while the first exhaust port 131a of the source gas adsorption region P1 is lower than the turntable 21. Even when exhaust is performed from one of the source gas adsorption region P1 and the reactive gas supply region P2 above the turntable 21 and the other below the turntable 21, mixing of the source gas and the reactive gas below the turntable 21 can be prevented. This makes it possible to prevent film formation on the lower surface of the turntable 21, thereby suppressing particle generation.

[0074] The film forming apparatus 1 may also include a plasma processing region for plasma processing the substrate W on the rotation path of the turntable 21. For example, the plasma processing region is provided between the reaction gas supply region P2 and the separation region D downstream in the rotation direction (clockwise) of the turntable 21.

[0075] The technical ideas and effects of the present disclosure explained in the above embodiments will be described below.

[0076] The substrate processing apparatus (film forming apparatus 1) according to the first aspect of the present disclosure includes a processing vessel 11 for processing a substrate W transferred therein, a turntable 21 rotatably provided inside the processing vessel 11, a mounting table 211 for mounting the substrate W thereon, the mounting table 211 being rotatable relative to the turntable 21 at a position spaced apart from the rotation center of the turntable 21, a processing gas supply unit 12a provided vertically above the turntable 21 for supplying a processing gas to the substrate W mounted on the mounting table 211, and a processing gas supply unit 12b. The apparatus is equipped with a separation gas supply unit 12b that supplies separation gas to multiple regions adjacent to the processing region to which the gas is supplied, thereby forming multiple separation regions D, and a gas exhaust unit 13 that has one or more exhaust ports 131a, 131b, 137a that communicate with the inside of the processing vessel 11 and exhausts gas through the exhaust ports 131a, 131b, 137a, where the exhaust ports 131a, 131b, 137a are located in processing regions between the multiple separation regions D and vertically above the turntable 21.

[0077] As described above, the substrate processing apparatus (film forming apparatus 1) has exhaust ports 131a, 131b, and 137a disposed vertically above the turntable 21, thereby enabling the process gas supplied to the substrate W to be guided to the upper side where the exhaust ports 131a, 131b, and 137a are located. This prevents the process gas supplied into the processing vessel 11 from flowing around to the underside of the mounting table 211, thereby preventing the process gas from adhering to the underside of the mounting table 211. Furthermore, the process gas that has been prevented from flowing around to the mounting table 211 is guided toward the exhaust ports 131a, 131b, and 137a by the separation gas separation region D in the space above the substrate W, allowing it to be smoothly exhausted. For example, in a configuration in which multiple process gases are supplied, mixing of the multiple process gases can be more reliably prevented.

[0078] At least one of the one or more exhaust ports 131a, 131b is provided outside the outer edge of the turntable 21. This allows the exhaust ports 131a, 131b to effectively guide the process gas toward the outer edge, which is the centrifugal direction of the turntable 21, without interfering with the supply of the process gas to the substrate W on the mounting table 211.

[0079] The gas exhaust unit 13 also includes an outer exhaust structure 131 that runs along the inner circumferential surface of the processing vessel 11 outside the outer edge of the turntable 21. The outer exhaust structure 131 includes a member (cover member 134) that is arranged vertically above the turntable 21, and the member has exhaust ports 131a and 131b that are located outside the outer edge of the turntable 21. This allows the substrate processing apparatus (film formation apparatus 1) to easily arrange multiple exhaust ports 131a and 131b vertically above the turntable 21.

[0080] At least one of the one or more exhaust ports 137a is provided closer to the rotation center of the turntable 21 than the mounting table 211. This allows the substrate processing apparatus (film forming apparatus 1) to easily exhaust the processing gas even on the rotation center side of the turntable 21.

[0081] The processing vessel 11 includes a concave main body 111 and a top plate 112 that closes the vertically upper side of the main body 111, and the exhaust port 137a on the rotation center side of the turntable 21 is provided in the top plate 112. This allows the substrate processing apparatus (film forming apparatus 1) to easily position the exhaust port 137a near the center of the processing vessel 11 and vertically above the turntable 21.

[0082] The processing region is a source gas adsorption region P1 that supplies a source gas that adheres to the substrate W. This allows the substrate processing apparatus (film formation apparatus 1) to exhaust the source gas in the source gas adsorption region P1 from the exhaust ports 131a, 137a without moving the source gas to the underside of the mounting table 211.

[0083] The processing region is a reactive gas supply region P2 that supplies a reactive gas that reacts with the source gas attached to the substrate W. This allows the substrate processing apparatus (film formation apparatus 1) to exhaust the reactive gas in the reactive gas supply region P2 from the exhaust port 131b without moving it to the underside of the mounting table 211.

[0084] The processing vessel 11 has two processing regions separated by a plurality of separation regions D. The two processing regions are a source gas adsorption region P1 that supplies a source gas that adheres to the substrate W, and a reaction gas supply region P2 that supplies a reaction gas that reacts with the source gas. This allows the substrate processing apparatus (film formation apparatus 1) to exhaust the source gas and reaction gas from the exhaust ports 131a, 131b, and 137a while performing good film formation on the substrate W. As a result, mixing of the source gas and reaction gas is prevented below the mounting table 211, and film formation on the mounting table 211 can be suppressed.

[0085] The processing vessel 11 has two processing regions separated by a plurality of separation regions D, one of the two processing regions having an exhaust port arranged vertically above the turntable 21, and the other of the two processing regions having an exhaust port arranged vertically below the turntable 21. Even in this case, the substrate processing apparatus (film forming apparatus 1) can prevent the plurality of processing gases from mixing below the turntable 21, and can avoid film formation below the turntable 21, thereby suppressing particles.

[0086] The substrate processing apparatus (film forming apparatus 1) also includes an inert gas supply unit 27 capable of introducing an inert gas into a space 28 below the table between the turntable 21 and the processing chamber 11, and exhaust ports 131a, 131b, and 137a exhaust the inert gas together with the processing gas. This allows the substrate processing apparatus (film forming apparatus 1) to flow the inert gas from the lower surface side of the mounting table 211 to above the turntable 21, thereby more reliably restricting the movement of the processing gas.

[0087] In addition, a substrate processing method according to a second aspect of the present disclosure includes the steps of transporting a substrate W to a turntable 21 provided inside a processing vessel 11, rotating the turntable 21 while rotating a mounting table 211 on which the substrate W is placed, the mounting table 211 being positioned away from the rotation center of the turntable 21, relative to the turntable 21, supplying a processing gas to the substrate W placed on the mounting table 211 from the vertically upper side of the turntable 21, supplying a separation gas to multiple areas adjacent to the processing area to which the processing gas is supplied to form multiple separation areas D, and evacuating the gas through one or more exhaust ports 131a, 131b, 137a communicating with the inside of the processing vessel 11, and in the gas exhausting step, the gas is exhausted from the exhaust ports 131a, 131b, 137a provided in a processing area between the multiple separation areas D and vertically above the turntable 21. Even in this case, the substrate processing method can prevent the processing gas supplied into the processing chamber 11 from flowing around to the underside of the mounting table 211.

[0088] The substrate processing apparatus and substrate processing method according to the presently disclosed embodiments are illustrative in all respects and are not limiting. The embodiments can be modified and improved in various ways without departing from the spirit and scope of the appended claims. The features described in the above embodiments can be configured in other ways as long as they are not inconsistent, and can be combined as long as they are not inconsistent. [Explanation of symbols]

[0089] 1 Film deposition equipment 11 Processing container 12a Processing gas supply unit 12b Separation gas supply section 13 Gas exhaust section 131a, 131b, 137a exhaust ports 21 Rotating Table 211 Mounting table W substrate

Claims

1. a processing vessel into which the substrate is transferred; a rotary table rotatably provided inside the processing vessel; a mounting table that is rotatable relative to the turntable at a position spaced from the rotation center of the turntable and that supports the substrate; a processing gas supply unit provided vertically above the turntable and configured to supply a processing gas to the substrate placed on the mounting table; a separation gas supply unit that supplies a separation gas to a plurality of regions adjacent to the processing region to which the processing gas is supplied, thereby forming a plurality of separation regions; a gas exhaust unit having one or more exhaust ports communicating with the interior of the processing vessel and exhausting gas through the exhaust ports; the exhaust port is disposed in the processing region between the plurality of separation regions and vertically above the turntable. Substrate processing equipment.

2. At least one of the one or more exhaust ports is provided outside the outer edge of the rotary table. The substrate processing apparatus according to claim 1 .

3. the gas exhaust unit includes an outer exhaust structure that is circumferentially arranged along an inner circumferential surface of the processing vessel outside an outer edge of the rotary table, the outer exhaust structure includes a member disposed vertically above the rotary table, the member having the exhaust port located outside an outer edge of the rotary table; The substrate processing apparatus according to claim 2 .

4. At least one of the one or more exhaust ports is provided closer to the rotation center of the rotary table than the mounting table. The substrate processing apparatus according to claim 1 .

5. the processing vessel includes a concave main body and a top plate that closes an upper side of the main body in a vertical direction, The exhaust port on the rotation center side of the rotary table is provided in the top plate. The substrate processing apparatus according to claim 4 .

6. the processing region is a source gas adsorption region that supplies a source gas that adheres to the substrate; The substrate processing apparatus according to claim 1 .

7. the processing region is a reactive gas supply region that supplies a reactive gas that reacts with the source gas attached to the substrate; The substrate processing apparatus according to claim 1 .

8. the processing vessel has two processing regions separated by a plurality of separation regions; The two processing regions are a source gas adsorption region that supplies a source gas that adheres to the substrate, and a reaction gas supply region that supplies a reaction gas that reacts with the source gas. The substrate processing apparatus according to claim 1 .

9. the processing vessel has two processing regions separated by a plurality of separation regions; In one of the two processing regions, the exhaust port is arranged vertically above the turntable, and in the other of the two processing regions, the exhaust port is arranged vertically below the turntable. The substrate processing apparatus according to claim 1 .

10. an inert gas supply unit capable of introducing an inert gas into a space below the table between the rotary table and the processing chamber; The exhaust port exhausts the inert gas together with the processing gas. The substrate processing apparatus according to claim 1 .

11. transporting the substrate to a rotary table provided inside the processing chamber; a step of rotating a mounting table on which the substrate is to be placed, the mounting table being disposed at a position spaced apart from the rotation center of the turntable, relative to the turntable while rotating the turntable; supplying a process gas to the substrate placed on the stage from above the rotary table in a vertical direction; supplying a separation gas to a plurality of regions adjacent to the processing region to which the processing gas is supplied, thereby forming a plurality of separation regions; and exhausting the gas through one or more exhaust ports communicating with the interior of the processing vessel, In the step of exhausting the gas, the gas is exhausted from the exhaust port provided in the processing region between the plurality of separation regions and vertically above the turntable. Substrate processing method.

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