SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD

Abstract

To provide a substrate processing device that can prevent a substrate from warping and further prevent the substrate from being contaminated due to removed chips, when making a processing head press an outer periphery part of the substrate such as a wafer.SOLUTION: A substrate processing device comprises: a substrate holding part 5 having an absorbing and holding surface 5a for holding a first surface 2a of a substrate W; a processing head 7 arranged to process an outer peripheral part of the substrate W; a static-pressure plate 9 having a fluid support surface 9a opposing to the adsorbing and holding surface 5a; and a fluid supply line 10 connected to the static-pressure plate 9, and supplying fluid to a space between the fluid support surface 9a and a second surface 2b of the substrate W. The second surface 2b is a surface at the opposite side of the first surface 2a of the substrate W, and the fluid support surface 9a is larger than the adsorbing and holding surface 5a.SELECTED DRAWING: Figure 2

Description

[Technical Field]

[0001] The present invention relates to a substrate processing apparatus and a substrate processing method for processing the outer periphery of a substrate such as a wafer, and more particularly to a substrate processing apparatus and a substrate processing method for processing the outer periphery of a substrate by pressing a processing tool against the outer periphery of the substrate with a processing head. [Background technology]

[0002] In recent years, devices such as memory circuits, logic circuits, and image sensors (e.g., CMOS sensors) have become increasingly highly integrated. During the processes used to fabricate these devices, foreign particles such as particles and dust can adhere to the devices. Foreign particles adhering to devices can cause short circuits between wiring and circuit malfunctions. Therefore, in order to improve device reliability, it is necessary to clean wafers on which devices are formed and remove foreign particles from the wafer.

[0003] Foreign matter such as the fine particles and dust particles mentioned above can also adhere to the backside of the wafer. If such foreign matter adheres to the backside of the wafer, the wafer may move away from the stage reference surface of the exposure tool, or the front side of the wafer may tilt relative to the stage reference surface, resulting in misalignment of the patterning or deviation of the focal length.

[0004] Therefore, a polishing apparatus for removing foreign matter adhering to a wafer has been proposed, as shown in Figure 9. In the polishing apparatus shown in Figure 9, a wafer W is held and rotated by a vacuum suction stage 500. A liquid (e.g., pure water) is supplied to a front side surface 501 of the wafer W. A processing head 505 presses the outer periphery of a back side surface 502 of the rotating wafer W, so that the processing head 505 slightly scrapes off the outer periphery of the back side surface 502 of the wafer W. As a result, foreign matter can be removed from the outer periphery of the back side surface 502 of the wafer W.

[0005] Similarly, as shown in FIG. 10, the processing head 505 is pressed against the outer periphery of the front surface 501 of the wafer W, thereby removing foreign matter from the outer periphery of the front surface 501 of the wafer W. [Prior art documents] [Patent documents]

[0006] [Patent Document 1] Japanese Patent Application Publication No. 2018-139258 Summary of the Invention [Problem to be solved by the invention]

[0007] However, when the processing head 505 is pressed against the outer periphery of the backside surface 502 of the wafer W, the wafer W bends upward, as shown in FIG. 11. As a result, the outer periphery of the backside surface 502 of the wafer W may not be properly processed. Furthermore, the liquid supplied to the wafer W may collide with the processing head 505, causing the liquid containing polishing debris to splash back onto the front side surface 501 of the wafer W. Such polishing debris contained in the liquid may contaminate the wafer W, reducing the yield rate.

[0008] 12, when the processing head 505 is polishing the outer periphery of the front side surface 501 of the wafer W, the liquid containing polishing debris may collide with the processing head 505 and flow back toward the center of the wafer W. Such a backflow of the liquid containing polishing debris may cause contamination of the wafer W and reduce the yield rate.

[0009] Therefore, the present invention provides a substrate processing apparatus and a substrate processing method that can prevent the substrate from bending when the outer periphery of the substrate, such as a wafer, is pressed by a processing head, and further prevent contamination of the substrate due to processing debris. [Means for solving the problem]

[0010] In one aspect, a substrate processing apparatus is provided, comprising: a substrate holder having an adsorption holding surface for holding a first surface of a substrate; a processing head arranged to process an outer periphery of the substrate; a static pressure plate having a fluid support surface facing the adsorption holding surface; and a fluid supply line connected to the static pressure plate for supplying fluid to a space between the fluid support surface and a second surface of the substrate, the second surface being the surface opposite the first surface of the substrate, and the fluid support surface being larger than the adsorption holding surface.

[0011] In one aspect, the processing head is positioned to process a periphery of the first surface. In one aspect, the processing head is movable to process a periphery of the first surface and a periphery of the second surface. In one embodiment, the static pressure plate has a notch through which the processing head can enter. In one aspect, the substrate processing apparatus further includes a static pressure plate moving device that moves the static pressure plate in a direction away from and toward the suction holding surface. In one aspect, the substrate processing apparatus further includes a static pressure plate rotating device that rotates the static pressure plate. In one aspect, the substrate processing apparatus further includes a cleaning liquid supply nozzle that supplies a cleaning liquid to an upper surface of the static pressure plate. In one aspect, the substrate processing apparatus further includes a flow control valve that adjusts the flow rate of the fluid supplied to the space, and an operation control unit that operates the flow control valve based on the force applied to the outer periphery of the substrate from the processing head.

[0012] In one aspect, there is provided a substrate processing method, in which a first surface of a substrate is held by an adsorption holding surface, the substrate is rotated, a processing head presses a processing tool against an outer periphery of the substrate to process the outer periphery, and while the outer periphery of the substrate is being processed, a fluid is supplied to a space between a second surface of the substrate and a fluid support surface of a hydrostatic plate, the second surface being the surface opposite to the first surface of the substrate, and the fluid support surface is larger than the adsorption holding surface.

[0013] In one embodiment, the step of processing the outer periphery of the substrate is a step of processing at least the outer periphery of the first surface. In one embodiment, the step of processing the outer periphery of the substrate is a step of processing the outer periphery of the first surface and the outer periphery of the second surface. In one embodiment, the processing head processes the outer periphery of the second surface while entering a notch formed in the static pressure plate. In one aspect, the substrate processing method further includes the step of supplying a cleaning liquid to an upper surface of the static pressure plate after processing the outer periphery of the substrate. In one aspect, the substrate processing method further includes the step of rotating the static pressure plate after processing the outer periphery of the substrate. In one aspect, the flow rate of the fluid supplied to the space is adjusted based on the force applied to the outer periphery of the substrate from the processing head. In one embodiment, the fluid is a liquid. [Effects of the Invention]

[0014] While the processing head presses the processing tool against the outer periphery of the first surface of the substrate, the fluid pressure existing between the fluid support surface of the static pressure plate and the second surface of the substrate is applied to the second surface of the substrate. That is, the fluid pressure is applied to the substrate from the opposite side of the substrate from the processing head. This fluid pressure can prevent the substrate from bending due to the pressing force of the processing head. As a result, the processing head can apply the target pressing force to the substrate, allowing the outer periphery of the first surface of the substrate to be properly processed. Furthermore, the static pressure plate, which has a fluid support surface larger than the suction holding surface, can cover the second surface of the substrate and protect it from liquid containing processing debris. As a result, contamination of the substrate can be prevented. [Brief explanation of the drawings]

[0015] [Figure 1] FIG. 2 is a side view illustrating an example of a substrate. [Figure 2] 1 is a schematic diagram illustrating an embodiment of a substrate processing apparatus. [Figure 3]FIG. 10 is a schematic view showing another embodiment of the substrate processing apparatus. [Figure 4] FIG. 4 is a top view of the substrate processing apparatus shown in FIG. [Figure 5] 10 is a side view showing a state in which the processing head has been tilted upward by the processing head tilting device until the processing head faces the second surface of the substrate. FIG. [Figure 6] FIG. 10 is a schematic diagram showing a state in which the processing head processes the peripheral edge portion of the substrate. [Figure 7] FIG. 10 is a schematic view showing still another embodiment of the substrate processing apparatus. [Figure 8] FIG. 10 is a schematic view showing still another embodiment of the substrate processing apparatus. [Figure 9] FIG. 1 is a schematic diagram showing a conventional polishing apparatus. [Figure 10] FIG. 1 is a schematic diagram showing a conventional polishing apparatus. [Figure 11] FIG. 1 is a schematic diagram showing a conventional polishing apparatus. [Figure 12] FIG. 1 is a schematic diagram showing a conventional polishing apparatus. DETAILED DESCRIPTION OF THE INVENTION

[0016] Hereinafter, embodiments of a substrate processing apparatus and a substrate processing method for processing the outer periphery of a substrate such as a wafer will be described with reference to the drawings. Specific examples of processing the outer periphery of a substrate include polishing and cleaning of the outer periphery of the substrate.

[0017] 1 is a side view showing an example of a substrate. In this embodiment, a first surface 2a of the substrate W is the back surface of the substrate W on which no devices have been formed or are not planned to be formed, i.e., the non-device surface. A second surface 2b of the substrate W opposite the first surface 2a is the surface on which devices have been formed or are planned to be formed, i.e., the device surface. The first surface 2a and the second surface 2b are flat surfaces.

[0018] The outer periphery of the first surface 2a of the substrate W is an annular flat surface located around the central region of the first surface 2a of the substrate W. The outer periphery of the second surface 2b of the substrate W is also an annular flat surface located around the central region of the second surface 2b of the substrate W. The peripheral edge portion 2c of the substrate W is the outermost annular curved surface of the substrate W. The peripheral edge portion 2c is connected to both the outer periphery of the first surface 2a and the outer periphery of the second surface 2b. The peripheral edge portion 2c is sometimes called a bevel portion.

[0019] 2 is a schematic diagram showing one embodiment of a substrate processing apparatus. As shown in FIG. 2, the substrate processing apparatus includes a substrate holder 5 having a suction holding surface 5a that holds a first surface 2a of a substrate W, a processing head 7 arranged to process the outer periphery of the substrate W, a static pressure plate 9 having a fluid support surface 9a facing the suction holding surface 5a, and a fluid supply line 10 connected to the static pressure plate 9 and supplying fluid to a space between the fluid support surface 9a and the second surface 2b of the substrate W. In this embodiment, the suction holding surface 5a and the substrate W are circular, and the fluid support surface 9a of the static pressure plate 9 is also circular. The size of the fluid support surface 9a may be smaller than or the same as the size of the substrate W.

[0020] A vacuum line 12 is connected to the substrate holder 5. One end of the vacuum line 12 communicates with an opening 5b formed in the suction holding surface 5a, and the other end of the vacuum line 12 is connected to a vacuum source (e.g., a vacuum pump) (not shown). A central region of the first surface 2a of the substrate W is held on the suction holding surface 5a by the vacuum suction force generated within the opening 5b. In this embodiment, the substrate W is supported horizontally by the substrate holder 5 with its first surface 2a facing downward.

[0021] The fluid support surface 9a of the static pressure plate 9 is located directly above the entire suction-holding surface 5a of the substrate holder 5. The fluid support surface 9a is larger than the suction-holding surface 5a, and the outermost edge of the fluid support surface 9a is located radially outward from the suction-holding surface 5a. The outer periphery of the first surface 2a and the outer periphery of the second surface 2b (see FIG. 1) are also located radially outward from the suction-holding surface 5a of the substrate holder 5.

[0022] The substrate holder 5 includes a substrate stage 14 having an adsorption holding surface 5a, and a stage motor 15 that rotates the substrate stage 14 around the center of the adsorption holding surface 5a. The stage motor 15 is capable of rotating the substrate W on the adsorption holding surface 5a. As shown in FIG. 2, the stage motor 15 may be indirectly connected to the substrate stage 14 via a belt or the like, or may be directly connected to the substrate stage 14.

[0023] The processing head 7 is disposed below the outer periphery of the first surface 2a of the substrate W held by the substrate holder 5. The processing head 7 includes a pressing member 21 that presses a polishing tape 20, which is an example of a processing tool, against the first surface 2a of the substrate W, and an actuator 24 that applies a pressing force to the pressing member 21. The actuator 24 presses the pressing member 21 toward the outer periphery of the first surface 2a of the substrate W, and the pressing member 21 presses the polishing tape 20 from its back side against the outer periphery of the first surface 2a of the substrate W, thereby polishing (processing) the outer periphery of the first surface 2a.

[0024] The substrate processing apparatus further includes a processing head translational movement device 30 that translates the processing head 7 along the first surface 2 a of the substrate W. The processing head translational movement device 30 is connected to the processing head 7. The processing head translational movement device 30 is configured, for example, by a combination of a servo motor and a ball screw mechanism, or an air cylinder. While the processing head 7 presses the polishing tape 20 against the outer periphery of the first surface 2 a of the substrate W, the processing head translational movement device 30 translates the processing head 7 radially outward along the first surface 2 a of the substrate W, allowing the processing head 7 to process (polish) the entire outer periphery of the first surface 2 a.

[0025] The substrate processing apparatus further includes a polishing tape supply mechanism 40 that supplies the polishing tape 20 to the processing head 7 and collects the polishing tape 20 from the processing head 7. The polishing tape supply mechanism 40 includes a tape supply reel 41 to which one end of the polishing tape 20 is connected, a tape take-up reel 42 to which the other end of the polishing tape 20 is connected, and a tape feed device 45 that feeds the polishing tape 20 in its longitudinal direction. In this embodiment, the tape feed device 45 is provided in the processing head 7. In another embodiment, the tape feed device 45 may be provided in a location remote from the processing head 7.

[0026] The tape feed device 45 includes a tape feed roller 46 connected to a tape feed motor (not shown), and a nip roller 47 that presses the polishing tape 20 against the tape feed roller 46. The polishing tape 20 is sandwiched between the tape feed roller 46 and the nip roller 47. When the tape feed motor rotates the tape feed roller 46, the polishing tape 20 advances in its longitudinal direction. More specifically, the polishing tape 20 advances from the tape supply reel 41 to the tape take-up reel 42 via the processing head 7.

[0027] The tape supply reel 41 and the tape take-up reel 42 are connected to reel motors 48 and 49, respectively. These reel motors 48 and 49 apply torque to the tape supply reel 41 and the tape take-up reel 42 to rotate them in opposite directions, thereby applying tension to the polishing tape 20. The positions of the tape supply reel 41 and the tape take-up reel 42 may be reversed.

[0028] In one embodiment, the reel motors 48 and 49 may also function as the tape feed device instead of the above-described tape feed device 45. That is, when the tape take-up reel 42 is rotated by the reel motor 49, the polishing tape 20 advances from the tape unwind reel 41 to the tape take-up reel 42 via the processing head 7. The torque generated by the reel motor 49 is greater than the torque generated by the reel motor 48, and tension is applied to the polishing tape 20.

[0029] The static pressure plate 9 has a through hole 9b that passes through its center. One end of the through hole 9b is connected to a fluid supply line 10, and the other end of the through hole 9b opens at the fluid support surface 9a. The fluid supply line 10 in this embodiment is a liquid supply line that supplies liquid to the space between the fluid support surface 9a and the second surface 2b of the substrate W. An example of the liquid is pure water. The fluid supply line 10 is connected to a fluid supply source (e.g., a liquid supply source such as a pure water supply source) not shown. A flow control valve 54 is attached to the fluid supply line 10, and the flow rate of the liquid supplied to the static pressure plate 9 through the fluid supply line 10 is adjusted by the flow control valve 54.

[0030] The substrate processing apparatus further includes a static pressure plate moving device 60 that moves the static pressure plate 9 in a direction away from and toward the suction holding surface 5a. The static pressure plate moving device 60 may be configured to lift the static pressure plate 9, or may be configured to horizontally move the static pressure plate 9. When transporting the substrate W onto the suction holding surface 5a, the static pressure plate moving device 60 operates to move the static pressure plate 9 in a direction away from the suction holding surface 5a, and after the substrate W is held on the suction holding surface 5a, to move the static pressure plate 9 above the suction holding surface 5a.

[0031] The outer periphery of the first surface 2a of the substrate W is processed as follows. With the central region of the first surface 2a of the substrate W held on the suction holding surface 5a, the substrate W is rotated by the substrate holding unit 5. The static pressure plate 9 is independent of the substrate holding unit 5 and remains stationary. The fluid support surface 9a of the static pressure plate 9 faces the second surface 2b of the substrate W and is close to the second surface 2b of the substrate W. The distance between the fluid support surface 9a of the static pressure plate 9 and the second surface 2b of the substrate W is 0.1 mm to 5.0 mm.

[0032] A liquid (e.g., pure water) is supplied to the static pressure plate 9 through a fluid supply line 10, filling the space between the fluid support surface 9a and the second surface 2b of the substrate W. Liquid pressure is applied to the second surface 2b of the substrate W. The liquid flows outward through the space between the fluid support surface 9a and the second surface 2b of the substrate W and exits the substrate W. The processing head 7 presses a polishing tape 20, which is a processing tool, against the outer periphery of the first surface 2a of the substrate W, while the processing head translation device 30 moves the processing head 7 radially outward of the substrate W until the processing head 7 reaches the peripheral edge 2c of the substrate W (see the arrow in FIG. 2). The processing head 7 can bring the polishing tape 20 into contact with the entire outer periphery of the first surface 2a. As a result, the outer periphery of the first surface 2a is processed (polished).

[0033] While the processing head 7 presses the polishing tape 20 against the outer periphery of the first side 2a of the substrate W, the pressure of the liquid present between the fluid support surface 9a of the static pressure plate 9 and the second side 2b of the substrate W is applied to the second side 2b of the substrate W. In other words, the liquid pressure is applied to the substrate W from the side opposite the processing head 7 across the substrate W. This liquid pressure can prevent bending of the substrate W due to the pressing force of the processing head 7. As a result, the processing head 7 can apply a target pressing force to the substrate W, and the outer periphery of the first side 2a of the substrate W can be properly processed.

[0034] Furthermore, the static pressure plate 9, which has a fluid support surface 9a larger than the suction hold surface 5a, covers the second surface 2b of the substrate W and can protect the second surface 2b from the liquid containing processing debris, thereby preventing contamination of the substrate W.

[0035] In one embodiment, the fluid supply line 10 may be a gas supply line that supplies a gas (for example, an inert gas such as nitrogen gas) to the space between the fluid support surface 9a and the second surface 2b of the substrate W.

[0036] The operation of the substrate processing apparatus is controlled by an operation control unit 70. The operation control unit 70 is electrically connected to the substrate holder 5, the processing head 7, the polishing tape supply mechanism 40, the processing head translational movement device 30, the hydrostatic plate movement device 60, and the flow control valve 54, and the operations of these components are controlled by the operation control unit 70.

[0037] The operation control unit 70 is composed of at least one computer. The operation control unit 70 has a storage device 70a and an arithmetic device 70b. The storage device 70a stores a program therein. The arithmetic device 70b is configured to execute calculations according to instructions included in the program. The storage device 70a includes a main storage device such as a random access memory (RAM) and an auxiliary storage device such as a hard disk drive (HDD) or a solid state drive (SSD). Examples of the arithmetic device 70b include a CPU (central processing unit) and a GPU (graphics processing unit). However, the specific configuration of the operation control unit 70 is not limited to these examples.

[0038] The force applied from the processing head 7 to the outer periphery of the first surface 2 a of the substrate W may vary depending on several conditions, such as the type of substrate W and the processing recipe for the substrate W. As a result, the pressure of the liquid to be applied to the second surface 2 b of the substrate W may also vary. Therefore, in one embodiment, the flow rate of the liquid supplied to the space between the fluid support surface 9 a and the second surface 2 b of the substrate W may be adjusted based on the force applied from the processing head 7 to the outer periphery of the substrate W. More specifically, the operation control unit 70 is configured to operate the flow control valve 54 based on the force applied from the processing head 7 to the outer periphery of the first surface 2 a of the substrate W. According to this embodiment, the pressure of the liquid applied to the second surface 2 b of the substrate W increases in response to an increase in the force applied from the processing head 7 to the outer periphery of the substrate W, thereby more reliably preventing bending of the substrate W.

[0039] The force applied from the processing head 7 to the outer periphery of the first surface 2 a of the substrate W is generated by the actuator 24 of the processing head 7. The force generated by the actuator 24 can be estimated from a command value for the force to be generated by the actuator 24. For example, if the actuator 24 is configured as an air cylinder, the force generated by the actuator 24 can be estimated from a command value for a pressure regulator that controls the pressure of the gas supplied to the air cylinder. As another example, if the actuator 24 is configured as a linear motor or a servo motor, the force generated by the actuator 24 can be estimated from a command value for the power to be supplied to the linear motor or servo motor. The force generated by the actuator 24 may also be measured directly using a load measuring device such as a load cell.

[0040] The operation control unit 70 can use the pressure of the liquid to cancel the force applied to the first side 2 a of the substrate W by operating the flow control valve 54 based on the estimated or measured value of the force generated by the actuator 24. In one embodiment, multiple processing heads 7 may be provided for polishing the outer periphery of the first side 2 a of the substrate W.

[0041] Fig. 3 is a schematic diagram showing another embodiment of the substrate processing apparatus, and is a side view seen from the direction of the polishing tape supply mechanism 40. Fig. 4 is a top view of the substrate processing apparatus shown in Fig. 3. To facilitate understanding of the structure, Figs. 3 and 4 omit illustration of the polishing tape supply mechanism 40, hydrostatic plate moving device 60, operation control unit 70, etc. Configurations of this embodiment that are not specifically described are the same as those of the embodiment described with reference to Fig. 2, and therefore redundant description will be omitted.

[0042] The substrate processing apparatus of this embodiment includes a processing head tilting device 90 that tilts the processing head 7 relative to the suction holding surface 5a of the substrate holder 5. The processing head tilting device 90 includes a crank arm 91 connected to the processing head 7 and an arm rotation device 92 that rotates the crank arm 91. One end of the crank arm 91 is located at substantially the same height as the suction holding surface 5a and is connected to the arm rotation device 92. The other end of the crank arm 91 is connected to the processing head 7. The arm rotation device 92 is connected to the processing head translational movement device 30. That is, the processing head 7 is connected to the processing head translational movement device 30 via the processing head tilting device 90.

[0043] When the arm rotation device 92 rotates the crank arm 91, the entire processing head 7 can be tilted relative to the suction and holding surface 5a and the substrate W. However, as long as the processing head 7 can be tilted relative to the suction and holding surface 5a and the substrate W, the specific configuration of the processing head tilting device 90 is not limited to the embodiment shown in Figures 3 and 4.

[0044] The static pressure plate 9 has a notch 9c into which the processing head 7 can enter. The notch 9c is formed on the outer periphery of the static pressure plate 9, and has a width greater than that of the processing head 7. The position of the notch 9c corresponds to the position of the processing head 7. In one embodiment, multiple processing heads 7 for polishing the outer periphery of the substrate W may be provided. In this case, the static pressure plate 9 may have multiple notches 9c corresponding to the multiple processing heads 7.

[0045] 5 is a side view showing a state in which the processing head 7 has been tilted upward by the processing head tilting device 90 until the processing head 7 faces the second surface 2b of the substrate W. As shown in Fig. 5, when the processing head 7 faces the second surface 2b of the substrate W, the processing head 7 enters the notch 9c of the static pressure plate 9. Therefore, the processing head 7 can process (polish) the outer periphery of the second surface 2b of the substrate W without coming into contact with the static pressure plate 9.

[0046] The outer periphery of the second surface 2b of the substrate W can be processed in the same manner as the outer periphery of the first surface 2a of the substrate W. That is, a liquid (e.g., pure water) is supplied to the static pressure plate 9 through a fluid supply line 10 and fills the space between the fluid support surface 9a and the second surface 2b of the substrate W. The liquid flows outward through the space between the fluid support surface 9a and the second surface 2b of the substrate W and exits the substrate W. The processing head 7 presses a polishing tape 20, which serves as a processing tool, against the outer periphery of the second surface 2b of the substrate W, while the processing head translation device 30 moves the processing head 7 radially outward of the substrate W (see the arrow in FIG. 5). The processing head 7 can bring the polishing tape 20 into contact with the entire outer periphery of the second surface 2b. As a result, the outer periphery of the second surface 2b is processed (polished).

[0047] While the processing head 7 presses the polishing tape 20 against the outer periphery of the second side 2b of the substrate W, the liquid flows radially outward in the space between the fluid support surface 9a of the static pressure plate 9 and the second side 2b of the substrate W. This flow of liquid can reliably prevent processing debris (polishing debris) generated by contact between the polishing tape 20 and the substrate W from moving toward the center of the substrate W. Therefore, contamination of the second side 2b of the substrate W due to processing debris can be prevented.

[0048] 5, the processing head 7 can process the outer periphery of both the first side 2a and the second side 2b of the substrate W. Either the outer periphery of the first side 2a or the outer periphery of the second side 2b is processed first, and the other is processed later. When processing the outer periphery of the first side 2a and when processing the outer periphery of the second side 2b, the processing head 7 is moved radially outward of the substrate W by the processing head translation device 30 until it reaches the peripheral edge 2c of the substrate W.

[0049] The processing head 7 can further process the peripheral edge portion 2 c of the substrate W. Specifically, as shown in Fig. 6, the processing head 7 presses the polishing tape 20 against the peripheral edge portion 2 c of the rotating substrate W, while a processing head tilting device 90 (see Figs. 3 and 4) tilts the processing head 7 along the peripheral edge portion 2 c of the substrate W. During polishing of the peripheral edge portion 2 c of the substrate W, the liquid flows radially outward in the space between the fluid support surface 9 a of the static pressure plate 9 and the second surface 2 b of the substrate W, as in the above-described embodiment.

[0050] The processing of the peripheral edge 2c of the substrate W may be performed after the processing of either the outer periphery of the first surface 2a or the outer periphery of the second surface 2b is completed. That is, in one embodiment, the outer periphery of the first surface 2a is processed in step 1, the outer periphery 2c of the substrate W is processed in step 2, and the outer periphery of the second surface 2b is processed in step 3. The processing of the outer periphery of the first surface 2a in step 1 and the processing of the peripheral edge 2c of the substrate W in step 2 can be performed consecutively without stopping the movement of the processing head 7.

[0051] In another embodiment, the outer periphery of the second surface 2b is processed in step 1, the peripheral edge 2c of the substrate W is processed in step 2, and the outer periphery of the first surface 2a is processed in step 3. In this case as well, the processing of the outer periphery of the second surface 2b in step 1 and the processing of the peripheral edge 2c of the substrate W in step 2 can be carried out consecutively without stopping the movement of the processing head 7.

[0052] According to the embodiment shown in FIG. 6, the outer periphery of the first surface 2a, the peripheral edge 2c of the substrate W, and the second surface 2b are processed consecutively, thereby improving the throughput of processing the substrate W.

[0053] Figure 7 is a schematic diagram showing yet another embodiment of a substrate processing apparatus. The configuration and operation of this embodiment, unless otherwise specified, are the same as those of the embodiment described with reference to Figure 2, and therefore redundant description will be omitted. As shown in Figure 7, the substrate processing apparatus of this embodiment includes a hydrostatic plate rotation device 100 that rotates a hydrostatic plate 9. This hydrostatic plate rotation device 100 includes a first pulley 101 fixed to the shaft 9d of the hydrostatic plate 9, a plate rotation motor 102, a second pulley 103 fixed to the drive shaft of the plate rotation motor 102, and a belt 105 looped around the first pulley 101 and the second pulley 103.

[0054] The fluid supply line 10 is connected to a rotary joint 110 fixed to the shaft portion 9d of the hydrostatic plate 9. The shaft portion 9d of the hydrostatic plate 9 is rotatably supported by a bearing 112, and the bearing 112 is held by a bearing holder 113. The hydrostatic plate moving device 60 is connected to the bearing holder 113.

[0055] During processing of the outer periphery (and peripheral edge 2c) of the substrate W, the static pressure plate rotation device 100 does not rotate the static pressure plate 9. In other words, the static pressure plate 9 remains stationary during processing of the substrate W. After processing of the substrate W, the static pressure plate rotation device 100 rotates the static pressure plate 9, thereby removing liquid adhering to the static pressure plate 9 (particularly liquid adhering to the upper surface of the static pressure plate 9) by centrifugal force. As a result, the static pressure plate 9 can be kept clean. While the static pressure plate 9 is being rotated, liquid may be supplied from the fluid supply line 10 to the space between the fluid support surface 9a of the static pressure plate 9 and the second surface 2b of the substrate W.

[0056] In one embodiment, the hydrostatic plate rotating device 100 may be configured with a combination of gears instead of the combination of the first pulley 101, the second pulley 103, and the belt 105.

[0057] As in one embodiment shown in Figure 8, the substrate processing apparatus may further include a cleaning liquid supply nozzle 120 that supplies a cleaning liquid to the upper surface of the static pressure plate 9. The cleaning liquid supply nozzle 120 is connected to a cleaning liquid supply line 121 and faces the upper surface of the static pressure plate 9. After processing the outer periphery of the substrate W, the cleaning liquid is supplied from the cleaning liquid supply nozzle 120 to the upper surface of the static pressure plate 9. An example of the cleaning liquid is pure water. According to the embodiment shown in Figure 8, the static pressure plate 9 can be kept cleaner.

[0058] While the static pressure plate 9 is rotated by the static pressure plate rotating device 100, a cleaning liquid may be supplied from the cleaning liquid supply nozzle 120 to the upper surface of the static pressure plate 9. In one embodiment, while the static pressure plate 9 is rotated by the static pressure plate rotating device 100, a cleaning liquid may be supplied from the cleaning liquid supply nozzle 120 to the upper surface of the static pressure plate 9, and liquid may be supplied from the fluid supply line 10 to the space between the fluid support surface 9a of the static pressure plate 9 and the second surface 2b of the substrate W.

[0059] The above-described embodiments can be combined as appropriate. For example, the hydrostatic plate rotating device 100 shown in Fig. 7 can be combined with the embodiments described with reference to Figs. 3 to 6. Similarly, the cleaning liquid supply nozzle 120 shown in Fig. 8 can be combined with the embodiments described with reference to Figs. 3 to 6.

[0060] In each of the above-described embodiments, the polishing tape 20 is used as the processing tool, but a grindstone, a cleaning tape, a cleaning brush, a nonwoven tape, a cleaning pad, or the like may be used as the processing tool instead of the polishing tape 20. Specific examples of processing the outer periphery of the substrate W include polishing the outer periphery of the substrate W, as well as cleaning the outer periphery of the substrate W.

[0061] The above-described embodiments have been described for the purpose of enabling a person of ordinary skill in the art to practice the present invention. Various modifications of the above-described embodiments would be obvious to a person skilled in the art, and the technical concept of the present invention may be applied to other embodiments. Therefore, the present invention is not limited to the described embodiments, but is to be interpreted in the broadest scope in accordance with the technical concept defined by the claims. [Explanation of symbols]

[0062] 2a First side 2b Second side 2c Periphery 5 Board holding part 5a Suction holding surface 5b opening 7 Processing Head 9 Hydrostatic Plate 9a Fluid support surface 9b through hole 9c notch 9d shaft part 10 Fluid supply line 12 Vacuum Line 14 Substrate stage 15 Stage motor 20 Polishing tape 21 Pressing member 24 Actuators 30 Processing head translation device 40 Polishing tape supply mechanism 41 Tape unwinding reel 42 Tape take-up reel 45 Tape feeder 46 Tape feed roller 47 Nip roller 48,49 Reel motor 54 Flow control valve 60 Hydrostatic plate moving device 70 Motion control section 70a storage device 70b Arithmetic unit 90 Processing head tilting device 91 crank arm 92 Arm rotation device 100 Hydrostatic plate rotation device 101 First pulley 102 Plate rotation motor 103 Second pulley 105 Belt 110 rotary joint 112 Bearings 113 Bearing holder 120 Cleaning liquid supply nozzle 121 Cleaning solution supply line W substrate

Claims

1. a substrate holder having an adsorption holding surface for holding a first surface of a substrate; a processing head positioned to process a periphery of the substrate; a hydrostatic plate having a fluid support surface facing the suction holding surface; a fluid supply line connected to the static pressure plate for supplying fluid to a space between the fluid support surface and the second surface of the substrate; the second surface is a surface of the substrate opposite to the first surface, The substrate processing apparatus, wherein the fluid support surface is larger than the suction holding surface.

2. The substrate processing apparatus of claim 1 , wherein the processing head is positioned to process a periphery of the first surface.

3. The substrate processing apparatus of claim 2 , wherein the processing head is movable to process an outer periphery of the first surface and an outer periphery of the second surface.

4. The substrate processing apparatus according to claim 3 , wherein the static pressure plate has a notch into which the processing head can enter.

5. The substrate processing apparatus according to claim 1 , further comprising a static pressure plate moving device that moves the static pressure plate in a direction away from and toward the suction holding surface.

6. The substrate processing apparatus according to claim 1 , further comprising a static pressure plate rotating device that rotates the static pressure plate.

7. The substrate processing apparatus according to claim 1 , further comprising a cleaning liquid supply nozzle that supplies a cleaning liquid to an upper surface of the static pressure plate.

8. a flow control valve for adjusting the flow rate of the fluid supplied to the space; The substrate processing apparatus according to claim 1 , further comprising an operation control unit that operates the flow control valve based on a force applied from the processing head to the outer periphery of the substrate.

9. rotating the substrate while holding the first surface of the substrate by the suction holding surface; a processing head presses a processing tool against the outer periphery of the substrate to process the outer periphery; supplying a fluid to a space between a second surface of the substrate and a fluid support surface of a hydrostatic plate while processing the outer periphery of the substrate; the second surface is a surface of the substrate opposite to the first surface, The method for processing a substrate, wherein the fluid support surface is larger than the suction holding surface.

10. 10. The substrate processing method according to claim 9, wherein the step of processing the outer periphery of the substrate is a step of processing at least the outer periphery of the first surface.

11. The substrate processing method according to claim 10 , wherein the step of processing the outer periphery of the substrate is a step of processing the outer periphery of the first surface and the outer periphery of the second surface.

12. The substrate processing method according to claim 11 , wherein the processing head processes the outer periphery of the second surface while being inserted into a notch formed in the static pressure plate.

13. 13. The substrate processing method according to claim 9, further comprising the step of supplying a cleaning liquid to an upper surface of the static pressure plate after processing the outer periphery of the substrate.

14. The substrate processing method according to claim 9 , further comprising the step of rotating the static pressure plate after processing the outer periphery of the substrate.

15. 15. The substrate processing method according to claim 9, further comprising adjusting a flow rate of the fluid supplied to the space based on a force applied from the processing head to the outer periphery of the substrate.

16. The substrate processing method according to claim 9 , wherein the fluid is a liquid.

Images