Semiconductor manufacturing equipment and semiconductor device manufacturing method

Abstract

To remove a by-product including a metal element.SOLUTION: A semiconductor manufacturing device of an embodiment comprises: a chamber including a top plate and a sidewall; a holder provided in the chamber and holding the substrate; a first high-frequency power supply for applying high frequency power to the holder or the top plate; a second high-frequency power supply for applying high-frequency power to the holder; a third high-frequency power supply for applying high-frequency power to the top plate; a gas supply pipe for supplying a gas to the chamber; and a gas exhaust pipe for exhausting a gas from the chamber.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] FIELD Embodiments of the present invention relate to a semiconductor manufacturing apparatus and a method for manufacturing a semiconductor device. [Background technology]

[0002] When a layer containing a metal element is etched by reactive ion etching, by-products containing the metal element adhere to the inner surface of the chamber. The by-products adhered to the inner surface of the chamber can cause, for example, particle generation. Therefore, it is necessary to remove the by-products adhered to the inner surface of the chamber by cleaning the chamber. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Patent Publication No. 2021-12951 Summary of the Invention [Problem to be solved by the invention]

[0004] An object of one embodiment of the present invention is to remove by-products containing metal elements. [Means for solving the problem]

[0005] The semiconductor manufacturing apparatus of the embodiment includes a chamber including a top plate and a side wall, and a A first layer containing indium (In) Holds the board possible a holder, a first high frequency power supply that applies high frequency power to the holder or the top plate, a second high frequency power supply that applies high frequency power to the holder, a third high frequency power supply that applies high frequency power to the top plate, and a third high frequency power supply that applies high frequency power to the chamber. A gas containing a diketone or hydrocarbon and a gas containing oxygen can be supplied. a gas supply pipe and a gas supply line from the chamber Contains metal complexes containing indium (In) a gas exhaust pipe for exhausting gas; a cooling device that cools the top plate; Equipped with. [Brief explanation of the drawings]

[0006] [Figure 1] 1 is a schematic diagram of a semiconductor manufacturing apparatus according to an embodiment. [Figure 2] 5A to 5C are explanatory views of an example of a manufacturing method of the semiconductor device according to the embodiment. [Figure 3] 5A to 5C are explanatory views of an example of a manufacturing method of the semiconductor device according to the embodiment. [Figure 4] 5A to 5C are explanatory views of an example of a manufacturing method of the semiconductor device according to the embodiment. [Figure 5] 5A to 5C are explanatory views of an example of a manufacturing method of the semiconductor device according to the embodiment. [Figure 6] 5A to 5C are explanatory views of an example of a manufacturing method of the semiconductor device according to the embodiment. [Figure 7] 5A to 5C are explanatory views of an example of a manufacturing method of the semiconductor device according to the embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0007] Hereinafter, an embodiment of the present invention will be described with reference to the drawings. In the following description, the same or similar components will be designated by the same reference numerals, and the description of components that have already been described may be omitted as appropriate.

[0008] Furthermore, in this specification, the terms "upper" and "lower" may be used for convenience. "Upper" and "lower" are terms that indicate, for example, a relative positional relationship within a drawing. The terms "upper" and "lower" do not necessarily define a positional relationship with respect to gravity.

[0009] Hereinafter, a semiconductor manufacturing apparatus and a method for manufacturing a semiconductor device according to an embodiment will be described with reference to the drawings.

[0010] The semiconductor manufacturing apparatus of the embodiment includes a chamber including a top plate and a side wall, a holder provided in the chamber for holding a substrate, a first high frequency power supply for applying high frequency power to the holder or the top plate, a second high frequency power supply for applying high frequency power to the holder, a third high frequency power supply for applying high frequency power to the top plate, a gas supply pipe for supplying gas to the chamber, and a gas exhaust pipe for exhausting gas from the chamber.

[0011] 1 is a schematic diagram of a semiconductor manufacturing apparatus according to an embodiment. The semiconductor manufacturing apparatus according to the embodiment is a reactive ion etching apparatus (RIE apparatus). The reactive ion etching apparatus according to the embodiment is a capacitively coupled plasma apparatus (CCP apparatus).

[0012] The RIE apparatus 100 includes, for example, a chamber 10, a holder 12, a first high-frequency power supply 14, a second high-frequency power supply 16, a third high-frequency power supply 18, a gas supply pipe 20, a gas exhaust pipe 22, an exhaust device 24, a first cooling device 26, a second cooling device 28, and a heater 30. The second cooling device 28 is an example of a cooling device.

[0013] The chamber 10 includes a shower head 10a and a side wall 10b. The shower head 10a is an example of a top plate.

[0014] The shower head 10a is provided at the top of the chamber 10. The shower head 10a supplies gas supplied from the gas supply pipe 20 into the chamber 10 in a shower-like manner.

[0015] The shower head 10a functions as an upper electrode. High frequency power is applied to the shower head 10a. The shower head 10a is made of, for example, metal.

[0016] The shower head 10a includes a coolant flow path (not shown) formed therein. The coolant flow path is an air gap. A coolant for cooling the shower head 10a is supplied to the coolant flow path.

[0017] The side wall 10b is electrically isolated from the shower head 10a by, for example, an insulating material (not shown). The side wall 10b is, for example, grounded.

[0018] The holder 12 is provided in the chamber 10. The holder 12 holds, for example, a semiconductor wafer W. The semiconductor wafer W is an example of a substrate.

[0019] The holder 12 includes, for example, an electrostatic chuck (not shown) on the upper surface thereof, and the holder 12 attracts the semiconductor wafer W by using, for example, the electrostatic chuck.

[0020] The holder 12 functions as a lower electrode. High frequency power is applied to the holder 12. The holder 12 is made of, for example, metal.

[0021] For example, a coolant flow path is provided inside the holder 12. The coolant flow path is an air gap. A coolant for cooling the holder 12 is supplied to the coolant flow path.

[0022] The first high frequency power supply 14 has a function of applying high frequency power to the holder 12. The first high frequency power supply 14 is connected to the holder 12. Plasma can be generated in the chamber 10 by the high frequency power applied to the holder 12 by the first high frequency power supply 14.

[0023] The high frequency power applied to holder 12 by first high frequency power supply 14 is, for example, not less than 50 W and not more than 20,000 W. The oscillation frequency of the high frequency power applied to holder 12 by first high frequency power supply 14 is, for example, not less than 10 MHz and not more than 200 MHz.

[0024] The second high frequency power supply 16 has a function of applying high frequency power to the holder 12. The second high frequency power supply 16 is connected to the holder 12. By applying high frequency power to the holder 12 by the second high frequency power supply 16, the energy of the ions that collide with the semiconductor wafer W is controlled. For example, by lowering the oscillation frequency, the energy of the ions that collide with the semiconductor wafer W increases.

[0025] The high frequency power applied to the holder 12 by the second high frequency power supply 16 is, for example, not less than 50 W and not more than 20,000 W. The oscillation frequency of the high frequency power applied to the holder 12 by the second high frequency power supply 16 is lower than the oscillation frequency of the high frequency power applied to the holder 12 by the first high frequency power supply 14. The oscillation frequency of the high frequency power applied by the second high frequency power supply 16 is, for example, not less than 0.1 MHz and not more than 30 MHz.

[0026] The third high frequency power supply 18 has a function of applying high frequency power to the shower head 10a. The third high frequency power supply 18 is connected to the shower head 10a. By applying high frequency power to the shower head 10a from the third high frequency power supply 18, the energy of ions colliding with the surface of the shower head 10a is controlled. For example, by lowering the oscillation frequency, the energy of ions colliding with the semiconductor wafer W increases.

[0027] The high frequency power applied to the shower head 10a by the third high frequency power supply 18 is, for example, not less than 50 W and not more than 20,000 W. The oscillation frequency of the high frequency power applied to the shower head 10a by the third high frequency power supply 18 is, for example, lower than the oscillation frequency of the high frequency power applied to the holder 12 by the second high frequency power supply 16. The oscillation frequency of the high frequency power applied by the third high frequency power supply 18 is, for example, not less than 0.1 MHz and not more than 30 MHz.

[0028] The gas supply pipe 20 is provided, for example, in the upper part of the chamber 10. Gas is supplied from the gas supply pipe 20 to the chamber 10. For example, gas is introduced from the gas supply pipe 20 to the shower head 10a, and the gas is supplied into the chamber 10 from the shower head 10a.

[0029] The gas supply pipe 20 can supply, for example, an etching gas or a cleaning gas. The etching gas is used, for example, to etch a layer to be processed formed on the semiconductor wafer W. The cleaning gas is used to remove by-products generated by etching the layer to be processed. The cleaning gas is, for example, a gas containing a diketone. The cleaning gas is, for example, a gas containing a hydrocarbon. The cleaning gas is, for example, a gas containing oxygen.

[0030] The gas exhaust pipe 22 is provided, for example, at the bottom of the chamber 10. From the gas exhaust pipe 22, for example, unconsumed etching gas, unconsumed cleaning gas, or reaction products are exhausted to the outside of the chamber 10.

[0031] The exhaust device 24 is connected to the gas exhaust pipe 22. The exhaust device 24 is, for example, a vacuum pump.

[0032] The first cooling device 26 has a function of cooling the holder 12. The first cooling device 26 is, for example, a chiller.

[0033] The first cooling device 26 is connected to, for example, a refrigerant flow path provided inside the holder 12. The refrigerant is circulated through the cooling path by using the first cooling device 26. The refrigerant is, for example, a fluorine-based inert liquid.

[0034] The second cooling device 28 has a function of cooling the shower head 10a. The second cooling device 28 is, for example, a chiller.

[0035] The second cooling device 28 is connected to, for example, a refrigerant flow path provided inside the showerhead 10a. The refrigerant circulates through the cooling path using the second cooling device 28. The refrigerant is, for example, a fluorine-based inert liquid.

[0036] The heater 30 is provided, for example, on the outside of the side wall 10b of the chamber 10. The heater 30 has a function of heating the side wall 10b. The heater 30 is, for example, a resistance heater.

[0037] The semiconductor wafer W placed on the holder 12 is anisotropically etched using plasma generated between the showerhead 10 a and the holder 12 in the chamber 10 .

[0038] Next, a method for manufacturing a semiconductor device according to an embodiment using the semiconductor manufacturing apparatus of the embodiment will be described, which includes a method for cleaning the semiconductor manufacturing apparatus.

[0039] In one embodiment, a method for manufacturing a semiconductor device includes: loading a substrate having a first layer containing indium (In) into a chamber of a reactive ion etching apparatus having a chamber including a top plate and sidewalls, and a holder disposed in the chamber to hold the substrate; placing the substrate on the holder; performing an etching process to etch the first layer; unloading the substrate from the chamber; starting the supply of a first gas containing oxygen (O) into the chamber; starting the application of a first high-frequency power to the holder or the top plate; generating oxygen plasma in the chamber; stopping the application of the first high-frequency power; stopping the supply of the first gas; starting the supply of a second gas containing a diketone or a hydrocarbon into the chamber; and stopping the supply of the second gas.

[0040] 2, 3, 4, 5, 6, and 7 are explanatory views of an example of a method for manufacturing a semiconductor device according to an embodiment.

[0041] First, a semiconductor wafer W having a first layer containing indium (In) is loaded into the chamber 10 of the RIE apparatus 100. The semiconductor wafer W is an example of a substrate. The semiconductor wafer W is, for example, a silicon substrate.

[0042] The first layer includes, for example, indium (In), tin (Sn), and oxygen (O). The first layer is, for example, an indium tin oxide layer. The first layer includes, for example, indium (In), gallium (Ga), zinc (Zn), and oxygen (O). The first layer is, for example, an indium gallium zinc oxide layer.

[0043] The semiconductor wafer W is loaded into the chamber 10 and placed on a holder 12 (FIG. 2).

[0044] Next, an etching process is performed to etch the first layer (FIG. 3). Etching gas, for example, methane gas (CH4) and hydrogen gas (H2), is supplied into the chamber 10 from the gas supply pipe 20. The exhaust device 24 is operated to reduce the pressure inside the chamber 10 and maintain it at a predetermined pressure.

[0045] Next, radio frequency power is applied to the holder 12 by the first radio frequency power supply 14 and the second radio frequency power supply 16. The plasma density in the chamber 10 is mainly controlled by the radio frequency power applied to the holder 12 by the first radio frequency power supply 14. The bias between the plasma and the wafer is mainly controlled by the radio frequency power applied to the holder 12 by the second radio frequency power supply 16. This causes ions or radicals to collide with the semiconductor wafer W, etching the first layer.

[0046] Next, the application of high frequency power to the holder 12 is stopped, and the supply of etching gas is stopped. After the etching process is completed, the semiconductor wafer W is carried out of the chamber 10 (FIG. 4).

[0047] During the etching process, by-products 40 containing indium (In) are deposited on the surface of the showerhead 10a and the surface of the sidewall 10b. The by-products 40 containing indium are, for example, oxides or fluorides.

[0048] The etching process is followed by a cleaning process to remove by-products 40 containing indium.

[0049] After the etching process is completed, a dummy wafer W' is loaded into the chamber 10 of the RIE apparatus. The dummy wafer W' is, for example, a silicon substrate. The dummy wafer W' protects the surface of the electrostatic chuck of the holder 12 during, for example, a cleaning process.

[0050] At the beginning of the cleaning process, oxygen gas (O2) is started to be supplied into the chamber 10 from the gas supply pipe 20. The oxygen gas (O2) is an example of a first gas containing oxygen (O). The exhaust device 24 is operated to maintain the pressure inside the chamber 10 at a predetermined pressure.

[0051] Next, the first high frequency power supply 14 starts to apply a first high frequency power to the holder 12. The first high frequency power supply 14 applies the first high frequency power to the holder 12, generating oxygen plasma. The oxygen plasma oxidizes the indium-containing by-products 40 adhering to the showerhead 10a and the sidewall 10b. The oxidation generates an oxide 40x containing indium (FIG. 5).

[0052] Furthermore, the third high frequency power supply 18 starts applying the second high frequency power to the shower head 10a. The application of the second high frequency power to the shower head 10a starts simultaneously with, or before or after, the application of the first high frequency power to the holder 12.

[0053] The oscillation frequency of the second high frequency power is lower than the oscillation frequency of the first high frequency power, and may be the same as or lower than the oscillation frequency of the high frequency power applied to the holder 12 by the second high frequency power supply 16 during the etching process.

[0054] The second high-frequency power applied to the showerhead 10a causes ions in the oxygen plasma to collide with the showerhead 10a, heating the showerhead 10a. Heating the showerhead 10a promotes oxidation of the by-products 40 containing indium. The temperature of the showerhead 10a is, for example, 120°C or higher and 150°C or lower.

[0055] The sidewall 10b is heated using the heater 30. Heating the sidewall 10b promotes oxidation of the by-products 40 containing indium. The temperature of the sidewall 10b is, for example, 120°C or higher and 150°C or lower.

[0056] Next, the application of the first high frequency power to the holder 12 and the application of the second high frequency power to the shower head 10a are stopped.

[0057] Next, the supply of oxygen gas into the chamber 10 is stopped.

[0058] Next, hexafluoroacetylacetone (HFAc:C5H2F6O2) begins to be supplied into the chamber 10 from the gas supply pipe 20. Hexafluoroacetylacetone is an example of a second gas containing a diketone or a hydrocarbon.

[0059] The diketone contained in the second gas is, for example, C5H8O2, C5H7FO2, C5H6F2O2, C5H5F3O2, C5H4F4O2, C5H3F5O2, C5HF7O2, or C5F8O2. The diketone is, for example, β-diketone. The hydrocarbon contained in the second gas is, for example, CH4 or C2H6.

[0060] The exhaust device 24 is operated to maintain a predetermined pressure inside the chamber 10. Heating of the side wall 10b using the heater 30 continues.

[0061] It is also possible to stop the supply of the first gas, oxygen gas, and then start the supply of the second gas, hexafluoroacetylacetone, and then stop the application of the first high-frequency power and the second high-frequency power after starting the supply of the second gas.

[0062] Hexafluoroacetylacetone reacts with indium oxide 40x to produce metal complex 40y containing indium (FIG. 6). The produced metal complex 40y is vaporized and exhausted from gas exhaust pipe 22.

[0063] Next, the supply of hexafluoroacetylacetone into the chamber 10 is stopped.

[0064] Next, for example, the second cooling device 28 is operated to cool the shower head 10a. For example, the shower head 10a is cooled to a temperature that will be used when the next etching process is performed. For example, the shower head 10a is cooled to a temperature of 80°C or higher and 100°C or lower.

[0065] This completes the cleaning process. By the cleaning process, by-products 40 containing indium generated by the etching process are removed (FIG. 7). Thereafter, the dummy wafer W′ is carried out of the chamber 10.

[0066] For example, if the by-products 40 containing indium are not completely removed in the first cleaning process, a second cleaning process is carried out after the first cleaning process is completed.

[0067] At the beginning of the second cleaning process, oxygen gas begins to be supplied into the chamber 10 from the gas supply pipe 20. The oxygen gas is an example of a third gas containing oxygen (O).

[0068] Next, the first high frequency power supply 14 starts to apply the third high frequency power to the holder 12. The third high frequency power applied to the holder 12 by the first high frequency power supply 14 generates oxygen plasma.

[0069] In addition, the third high frequency power supply 18 starts applying the fourth high frequency power to the shower head 10a.

[0070] In addition, the heater 30 is used to heat the side wall 10b.

[0071] Next, the application of the third high frequency power to the holder 12 and the application of the fourth high frequency power to the shower head 10a are stopped.

[0072] Next, the supply of oxygen gas into the chamber 10 is stopped.

[0073] Next, hexafluoroacetylacetone (HFAc:C5H2F6O2) begins to be supplied into the chamber 10 from the gas supply pipe 20. Hexafluoroacetylacetone is an example of a fourth gas containing a diketone or a hydrocarbon.

[0074] Next, the supply of hexafluoroacetylacetone into the chamber 10 is stopped.

[0075] Next, for example, the second cooling device 28 is operated to cool the shower head 10a.

[0076] For example, if the by-products 40 containing indium are not completely removed in the second cleaning process, the cleaning process is repeated from the third time onwards until the by-products 40 containing indium are completely removed.

[0077] Next, the operation and effects of the semiconductor manufacturing apparatus and the semiconductor device manufacturing method of the embodiment will be described.

[0078] For example, when etching a layer containing indium (In), such as an indium tin oxide layer that constitutes a semiconductor device, using an RIE apparatus, by-products containing indium (In) adhere to the inner surface of the chamber, such as the surface of the chamber top plate or the surface of the chamber sidewall.

[0079] By-products adhering to the inner surface of the chamber can cause, for example, particle generation. The particles generated in the chamber can reduce the manufacturing yield of semiconductor devices, for example. Therefore, it is necessary to periodically remove the by-products adhering to the inner surface of the chamber. In other words, it is necessary to periodically perform a chamber cleaning process.

[0080] By-products containing indium have a low vapor pressure. In other words, they are difficult to volatilize. For this reason, in order to remove by-products containing indium by heating, for example, high temperatures exceeding the tolerance of the RIE equipment are required.

[0081] One possible solution to this problem is to open the chamber and remove the indium-containing by-products by wet etching or the like, but this method requires a long time for the cleaning process, which increases the turnaround time for semiconductor device manufacturing, thereby increasing the manufacturing cost of the semiconductor devices.

[0082] In the semiconductor manufacturing apparatus and semiconductor device manufacturing method according to the embodiment, an indium-containing by-product 40 is oxidized using oxygen plasma. Then, an indium-containing oxide 40x produced by the oxidation is reacted with a gas containing a diketone or a hydrocarbon to produce an indium-containing metal complex 40y.

[0083] For example, if the gas is hexafluoroacetylacetone (HFAc: C5H2F6O2), the gas reacts with indium oxide (InO2) to produce In(HFAc)2, a metal complex of indium.

[0084] Indium metal complexes have a relatively high vapor pressure. In other words, they are easily volatilized. Therefore, they can be removed at temperatures below 150°C, which is within the tolerance range of RIE equipment.

[0085] Therefore, it is possible to remove the indium-containing by-products 40 without opening the chamber, thereby shortening the time required for cleaning, for example, and reducing the turnaround time in semiconductor device manufacturing.

[0086] In the method for manufacturing a semiconductor device according to the embodiment, it is preferable to apply a second high frequency power to the shower head 10a between the start of application of the first high frequency power to the holder 12 and the end of application of the first high frequency power to the holder 12. In other words, when oxidizing the by-products 40 containing indium with oxygen plasma, it is preferable to heat the shower head 10a by applying the second high frequency power to promote the oxidation of the by-products 40 containing indium.

[0087] This improves the efficiency of removing the indium-containing by-products 40. Therefore, for example, the time required for the cleaning process is shortened.

[0088] In the RIE apparatus 100 of the embodiment, a third high-frequency power supply is connected to the shower head 10a, so that a second high-frequency power can be applied to the shower head 10a when oxidizing the by-products 40 containing indium with oxygen plasma.

[0089] In the method for manufacturing a semiconductor device according to the embodiment, it is preferable to cool the shower head 10a after stopping the supply of hexafluoroacetylacetone. By cooling the shower head 10a, for example, the time required for the cleaning process can be shortened.

[0090] The RIE apparatus 100 of the embodiment preferably includes a second cooling device 28 that cools the showerhead 10 a. By including the second cooling device 28, it becomes possible to cool the showerhead 10 a after stopping the supply of the gas containing the diketone or hydrocarbon.

[0091] In the method for manufacturing a semiconductor device according to the embodiment, the oscillation frequency of the second high frequency power is preferably lower than the oscillation frequency of the first high frequency power when oxygen plasma is generated, which increases the ion bombardment on the shower head 10a and increases the temperature of the shower head 10a.

[0092] In the semiconductor device manufacturing method of the embodiment, the oscillation frequency of the second high frequency power during oxygen plasma generation is preferably lower than the oscillation frequency of the high frequency power applied to the holder 12 by the second high frequency power supply 16 during etching. The ion bombardment on the shower head 10a increases, and the temperature of the shower head 10a increases. If the supply of hexafluoroacetylacetone is started while the temperature of the shower head 10a is high, the reactivity increases and cleaning properties improve.

[0093] In the method for manufacturing a semiconductor device according to the embodiment, it is preferable to heat the sidewall 10b between the start and end of the supply of hexafluoroacetylacetone. By increasing the temperature of the sidewall 10b, the reaction between the oxide of indium 40x and hexafluoroacetylacetone is promoted.

[0094] This improves the efficiency of removing the by-products 40 containing indium, thereby shortening the time required for the cleaning process, for example.

[0095] In the semiconductor device manufacturing method of the embodiment, it is preferable to stop the supply of oxygen gas, then start the supply of hexafluoroacetylacetone, and then stop the application of the first high-frequency power and the second high-frequency power after starting the supply of hexafluoroacetylacetone. If hexafluoroacetylacetone is decomposed by plasma, the reaction of forming a metal complex decreases, and the removal efficiency decreases. Before the temperature of the surface of the showerhead 10a decreases, the reaction between the oxide of indium 40x and hexafluoroacetylacetone starts.

[0096] Therefore, by stopping the plasma and reacting with heat, the efficiency of removing the by-products 40 containing indium is improved, and therefore, for example, the time required for the cleaning process is shortened.

[0097] In the method for manufacturing a semiconductor device according to the embodiment, the diketone contained in the second gas is preferably a β-diketone, which promotes the reaction for producing the indium metal complex 40y.

[0098] This improves the efficiency of removing the by-products 40 containing indium, thereby shortening the time required for the cleaning process, for example.

[0099] As described above, according to the semiconductor manufacturing apparatus and the semiconductor device manufacturing method of the embodiment, by-products containing indium can be removed.

[0100] Although the semiconductor manufacturing apparatus used in the semiconductor device manufacturing method of the embodiment is described as a capacitively coupled plasma apparatus (CCP apparatus), the semiconductor manufacturing apparatus used in the semiconductor device manufacturing method of the embodiment is not limited to a CCP apparatus. For example, an inductively coupled plasma apparatus (ICP apparatus) can also be used.

[0101] The semiconductor manufacturing apparatus of the embodiment has been described using an example in which the first high frequency power supply 14 applies high frequency power to the holder 12, but it is also possible to configure the first high frequency power supply 14 to apply high frequency power to the shower head 10a.

[0102] In addition, in the embodiment, the case where the top plate is the shower head 10a has been described as an example, but the top plate may have a structure other than a shower head. For example, the top plate may be an electrode separated from the gas supply pipe 20. [Explanation of symbols]

[0103] 10 Chambers 10a Shower head (top plate) 10b side wall 12 Holder 14 First high frequency power source 16 Second high frequency power supply 18 Third High Frequency Power Source 20 Gas supply pipe 22 Gas exhaust pipe 28 Second cooling device (cooling device) 30 Heater 100 RIE equipment (semiconductor manufacturing equipment) W Semiconductor wafer (substrate)

Claims

1. a chamber including a top plate and a sidewall; a holder provided in the chamber and capable of holding a substrate having a first layer containing indium (In); a first high frequency power source that applies high frequency power to the holder or the top plate; a second high frequency power source that applies high frequency power to the holder; a third high frequency power source that applies high frequency power to the top plate; a gas supply pipe capable of supplying a gas containing a diketone or a hydrocarbon and a gas containing oxygen to the chamber; a gas exhaust pipe for exhausting a gas containing a metal complex containing indium (In) from the chamber; a cooling device that cools the top plate; A semiconductor manufacturing device comprising:

2. 2. The semiconductor manufacturing apparatus according to claim 1, wherein the oscillation frequency of said first high frequency power supply is higher than the oscillation frequency of said second high frequency power supply, and the oscillation frequency of said first high frequency power supply is higher than the oscillation frequency of said third high frequency power supply.

3. 3. The semiconductor manufacturing apparatus according to claim 2, wherein the oscillation frequency of said third high frequency power supply is lower than the oscillation frequency of said second high frequency power supply.

4. 2. The semiconductor manufacturing apparatus according to claim 1, further comprising a heater for heating a sidewall of the chamber.

5. A reactive ion etching apparatus includes a chamber including a top plate and a side wall, and a holder disposed in the chamber and capable of holding a substrate. The reactive ion etching apparatus includes: a chamber; a holder disposed in the chamber and capable of holding a substrate; and a substrate having a first layer including indium (In) being carried into the chamber; placing the substrate on the holder; performing an etching process to etch the first layer; removing the substrate from the chamber; beginning a supply of a first gas comprising oxygen (O) into the chamber; Start applying a first high frequency power to the holder or the top plate to generate oxygen plasma in the chamber, and oxidize by-products containing indium (In) attached to the top plate by the oxygen plasma; Stopping the application of the first high frequency power; Stopping the supply of the first gas; starting a supply of a second gas containing a diketone or a hydrocarbon into the chamber, and generating a metal complex containing indium (In) with the second gas; Stopping the supply of the second gas; the top plate is cooled after the supply of the second gas is stopped.

6. 6. The method for manufacturing a semiconductor device according to claim 5, further comprising applying a second high frequency power to the top plate between the start of application of the first high frequency power and the end of application of the first high frequency power.

7. 7. The method for manufacturing a semiconductor device according to claim 6, wherein the oscillation frequency of said second high frequency power is lower than the oscillation frequency of said first high frequency power.

8. 6. The method for manufacturing a semiconductor device according to claim 5, wherein the sidewall is heated between the start of supplying the second gas and the stop of supplying the second gas.

9. 6. The method for manufacturing a semiconductor device according to claim 5, wherein the diketone is a β-diketone.

10. 7. The method for manufacturing a semiconductor device according to claim 6, wherein the supply of the second gas is started after the supply of the first gas is stopped, and the application of the first high frequency power and the application of the second high frequency power are stopped after the supply of the second gas is started.

11. 7. The method for manufacturing a semiconductor device according to claim 6, wherein the top plate is heated by applying the second high frequency power to the top plate.

12. After stopping the supply of the second gas, beginning a supply of a third gas comprising oxygen (O) into the chamber; starting application of a third high frequency power to the holder or the top plate to generate oxygen plasma in the chamber; Stopping the application of the third high frequency power; Stopping the supply of the third gas; beginning a supply of a fourth gas into the chamber, the fourth gas comprising a diketone or a hydrocarbon; 6. The method for manufacturing a semiconductor device according to claim 5, wherein the supply of the fourth gas is stopped.

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