Power device assembly with embedded PCB and method of manufacturing same

Abstract

To provide apparatus and methods for a power electronics assembly that includes a cold plate assembly and one or more power device assemblies.SOLUTION: In a power electronics assembly 100, a cold plate assembly 102 includes a manifold 104 including a heat sink cavity 108 in a first surface, and a heat sink 110. The heat sink includes one or more substrate cavities 112, and is positioned in the heat sink cavity 108. Each power device assembly 114 is positioned within a substrate cavity, and includes a direct bonded metal (DBM) substrate including a first metal layer directly bonded to an insulator layer and a power device. The DBM substrate includes a power device cavity. A power electronics device is positioned in the power device cavity, and is electronically coupled to the first metal layer.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] FIELD OF THE INVENTION The present disclosure relates generally to apparatus and methods for power electronic assemblies, and more particularly to apparatus and methods for power electronic assemblies that provide a compact package size while providing low overall thermal resistance. [Background technology]

[0002] The increasing use of electronic devices in vehicles requires more compact electronic systems. One component of such electronic systems is the power electronic device used as a switch in the inverter. Power electronic devices have enormous cooling requirements due to the heat they generate.

[0003] Additionally, power electronic devices that were traditionally constructed from silicon are now increasingly constructed from silicon carbide, which reduces the device's footprint and therefore increases heat flux. For these and other reasons, there is a need for improved cooling of power electronic devices while maintaining a compact package size. Summary of the Invention

[0004] In one embodiment, an apparatus for a power electronics assembly includes a cold plate assembly and one or more power device assemblies. The cold plate assembly includes a manifold including a heat sink cavity on a first surface thereof, and a heat sink. The heat sink includes one or more substrate cavities, and the heat sink is positioned within the heat sink cavity. The one or more power device assemblies are positioned within the one or more substrate cavities. Each power device assembly of the one or more power assemblies includes a direct bonded metal (DBM) substrate including a first metal layer directly bonded to an insulator layer and to a power device. The DBM substrate includes a power device cavity. The power device is positioned within the power device cavity, and the power device is electrically coupled to the first metal layer.

[0005] In another embodiment, a power device assembly includes a direct bonded metal (DBM) substrate and one or more power devices. The DBM substrate includes a first metal layer directly bonded to an insulator layer, and the DBM substrate includes one or more power device cavities. The one or more power devices are each positioned in one of the one or more power device cavities. Each of the one or more power devices is electrically coupled to the first metal layer.

[0006] In yet another embodiment, a method of forming a power electronics assembly is described. The method includes positioning a heat sink within a heat sink cavity on a first surface of a cooling plate manifold. The heat sink comprises one or more substrate cavities. The method further includes embedding one or more power device assemblies within the one or more substrate cavities. Each power device assembly comprises a direct bonded metal (DBM) substrate having a first metal layer bonded to an insulator layer. The DBM substrate comprises a power device cavity. The method further includes at least partially disposing a bonding layer within the power device cavity. The method further includes bonding the power device to the power device cavity via the bonding layer. The power device is electrically coupled to the first metal layer.

[0007] The features listed herein, as well as additional features provided by the embodiments described herein, will be more fully understood by considering the following detailed description in conjunction with the drawings. [Brief explanation of the drawings]

[0008] The embodiments set forth in the drawings are illustrative and exemplary in nature and are not intended to limit the subject matter defined by the claims. The following detailed description of exemplary embodiments can be understood when read in conjunction with the following drawings, in which like structure is indicated with like reference numerals and in which:

[0009] [Figure 1]1A and 1B schematically illustrate perspective views of an exemplary power electronics assembly including multiple embedded power devices according to one or more embodiments shown and described herein. [Figure 2] 1A and 1B illustrate schematic diagrams of an exploded perspective view of a cold plate assembly of a power electronics assembly having a heat sink and a manifold according to one or more embodiments shown and described herein. [Figure 3] 1A and 1B illustrate schematic diagrams of perspective assembled views of a cold plate assembly of a power electronics assembly according to one or more embodiments shown and described herein. [Figure 4] 1A and 1B schematically illustrate a side view of a cold plate assembly of a power electronics assembly according to one or more embodiments shown and described herein. [Figure 5] 2 shows a schematic side view of the power electronics assembly of FIG. 1 along section AA of FIG. 1; [Figure 6] 1A and 1B schematically illustrate an exploded perspective view of one of a plurality of embedded power device assemblies according to one or more embodiments shown and described herein. [Figure 7] 1A and 1B illustrate schematic perspective assembled views of one of a plurality of embedded power device assemblies according to one or more embodiments shown and described herein. [Figure 8] 6 shows a schematic perspective view of the power device assembly of FIG. 1 along section BB of FIG. 5; [Figure 9] 1A and 1B schematically illustrate a side view of a power device assembly embedded in a power device assembly according to one or more embodiments shown and described. [Figure 10] 1A and 1B schematically illustrate a side view of a power device assembly embedded therein in response to being subjected to a force, according to one or more embodiments shown and described herein; [Figure 11] 1A and 1B schematically illustrate another perspective view of an exemplary power electronics assembly comprising a plurality of embedded power device assemblies according to one or more embodiments shown and described herein. [Figure 12] 12 shows a schematic side view of the power electronics assembly of FIG. 11 taken along section CC of FIG. 11. [Figure 13] 1A and 1B schematically illustrate perspective views of an exemplary power electronics assembly with printed PCBs according to one or more embodiments shown and described herein. DETAILED DESCRIPTION OF THE INVENTION

[0010] The embodiments described herein are generally directed to a power electronics assembly having a direct bonded metal (DBM) layer integrated with a conductive layer and a self-aligned cold plate assembly. The conductive layer has a cavity into which a power electronics device is placed. The cavity is designed so that the top surface of the power electronics device is flush with the top surface of the cold plate assembly, allowing the power electronics device to be electrically coupled to its bottom electrode. The flat surface allows a printed circuit board (PCB) to be printed directly onto the cold plate assembly. Fewer layers span the entire surface, reducing the overall thermal resistance of the power electronics assembly. Additionally, the proximity of the heat-generating power electronics device to the cold plate improves cooling. This allows the power electronics device to output higher power while maintaining a compact package size.

[0011] Conventional systems require a separate metal component to electrically couple the power electronic device for the power electronics assembly to the bottom electrode of the power electronics device, which adds components, increases the height of the assembly, and increases thermal resistance.

[0012] Various embodiments of power electronic assemblies, methods of manufacturing power electronic assemblies, and operation of power electronic assemblies are described in further detail herein. Wherever possible, the same reference numbers will be used throughout the drawings to refer to the same or like parts.

[0013] 1-3, an exemplary power electronics assembly 100 is shown in accordance with one or more embodiments described herein. In particular, FIG. 1 illustrates the power electronics assembly 100 with multiple power device assemblies 114, with one power device assembly shown in an exploded view. FIG. 2 illustrates the cold plate assembly 102 of the power electronics assembly 100 in an exploded view. FIG. 3 illustrates the cold plate assembly 102 of FIG. 2 in an assembled view.

[0014] In some embodiments, power electronics assembly 100 is utilized in an electric vehicle. In other embodiments, power electronics assembly 100 is used in electrically powered devices such as, but not limited to, hybrid vehicles, any electric motor, generator, industrial tool, or household appliance. Power electronics assembly 100 may be electrically coupled to and configured to receive power from an electric motor and / or battery.

[0015] The exemplary power electronics assembly 100 includes a cold plate assembly 102 configured to house the embedded power devices 114 while absorbing heat generated by the power devices 114. As discussed in further detail herein, the cold plate assembly 102 receives a coolant configured to absorb heat generated by the power devices 114 and provides the coolant to a downstream cooling system. In this manner, the cold plate assembly 102 can remove heat from the power electronics assembly 100 in an efficient manner. The cold plate assembly 102 may be machined, forged, extruded, or cast from a block of thermally conductive material. In some embodiments, the cold plate assembly 102 is 3D printed.

[0016] The cold plate assembly 102 includes a manifold 104 (e.g., a manifold plate). The manifold 104 is configured to receive and provide a coolant to remove heat from the power electronics assembly 100. The manifold 104 has a first surface 106 (e.g., a planar surface). The first surface 106 forms a substantially flat profile. As discussed in more detail herein, a PCB may be printed on the first surface 106. This is advantageous because it reduces the thermal resistance of the power electronics assembly 100.

[0017] The manifold 104 includes an inlet 132 (e.g., an input port). The inlet 132 is configured to receive a coolant from a cooling system (not shown). The coolant is configured to interface with the heat sink 110 and then receive heat from the heat sink 110. The cold plate assembly 102 further includes an outlet 134 (e.g., an output port). The warmed coolant flows out of the cold plate assembly 102 via the outlet 134. In this manner, the cold plate assembly 102 can cool the power electronics assembly 100.

[0018] The manifold 104 forms a heat sink cavity 108 (see FIG. 2 ) on the first surface 106. The cold plate assembly 102 further includes a heat sink 110. The heat sink 110 is positioned within the heat sink cavity 108, as shown in FIGS. 1 and 3 . Positioning the heat sink 110 within the heat sink cavity 108 allows the elements of the heat sink 110 to be self-aligned with respect to the cold plate assembly 102. In other words, by fixing the heat sink 110 in a specific position, the position of the heat sink 110 is known. This reduces the overall assembly tolerances of the power electronics assembly 100.

[0019] The heat sink 110 comprises a plurality of substrate cavities 112. As discussed in more detail herein, each of the plurality of substrate cavities 112 is deep enough so that when a component is installed in each of the plurality of substrate cavities 112, the top surface of each of the plurality of substrate cavities 112 is flush with (e.g., flat along the same plane as) the first surface 106. This is advantageous because it provides a flat surface for a PCB that is printed on the power electronics assembly 100.

[0020] Referring now to FIG. 4 , a side view of an exemplary cold plate assembly is shown. In some embodiments, the cold plate assembly 102 comprises fins 202. The fins 202 are positioned on the bottom surface of the heat sink 110. The fins 202 are further positioned between the inlet 132 and the outlet 804. Furthermore, the fins 202 are positioned fluidly downstream of the inlet 132 and fluidly upstream of the outlet 134. This allows the fins 202 to disrupt the flow of coolant before it exits the outlet 134. In this manner, the coolant entering the inlet 132 maximizes contact with the fins 202 to effectively cool the cold plate assembly 102. The fins 202 comprise a series of channels. In some embodiments, the fins 202 comprise pin fins or any other suitable type of fin. After the coolant enters the inlet 132, it flows through the channels of the fins 202 to effectively cool the cold plate assembly 102.

[0021] 5, there is shown a side view of the power electronics assembly of FIG. 1 taken along section AA of FIG. 1. As shown, the top surfaces of the heat sink 110, substrate cavity 112, and power device assembly 114 are flush with the first surface 106 of the manifold 104.

[0022] 6-7, an individual power device assembly 114 of the plurality of power device assemblies 114 for the power electronics assembly 100 is shown. FIG. 6 shows the power device assembly 114 in an exploded view, and FIG. 7 shows the power device assembly in an assembled view. The plurality of power device assemblies 114 are embedded (e.g., disposed) in a plurality of substrate cavities 112. As a non-limiting example, the plurality of power device assemblies 114 may form an inverter circuit for supplying power to an electric device, such as an electric motor.

[0023] By positioning each of the plurality of power device assemblies 114 in one of the plurality of substrate cavities 112, each of the plurality of power device assemblies 114 is self-aligned with respect to the cold plate assembly 102. In other words, by fixing each of the plurality of power device assemblies 114 in a specific position, the position of each of the plurality of power device assemblies 114 is known. This reduces the overall assembly tolerance of the power electronics assembly 100. Furthermore, the top surface of each of the plurality of power device assemblies 114 is flush with the first surface 106.

[0024] Each power device assembly 114 includes a direct bonded metal (DBM) substrate 116. The DBM substrate 116 provides electrical insulation to isolate the power device assemblies 114 from one another.

[0025] The DBM substrate 116 includes a first metal layer 118 bonded directly to an electrical insulation layer 120. In an exemplary embodiment, the first metal layer 118 is positioned on the top layer of the DBM substrate 116. The first metal layer 118 may be composed of copper, aluminum, or any suitable conductor. As discussed in further detail herein, the first metal layer 118 operates as an "S-cell" of the power electronics assembly 100. In other words, the first metal layer 118 provides an electrical connection to the bottom electrodes of the power devices.

[0026] The DBM substrate 116 further comprises an insulating layer 120. Because the cold plate assembly 102 is constructed from an electrically conductive material, the insulating layer 120 provides electrical insulation for each of the multiple power device assemblies 114 from one another. The electrically insulating layer may be a ceramic, such as alumina.

[0027] The DBM substrate 116 further comprises a power device cavity 122 within the first metal layer 118 of the DBM substrate 116. The DBM substrate 116 further comprises a bottom metal layer (not shown) on the bottom surface of the electrically insulating layer 120.

[0028] As discussed in more detail herein, the power device cavity 122 is configured so that after bonding the components to the DBM substrate 116, the top surface of the DBM substrate 116 is flush with the first surface 106.

[0029] Each power device assembly 114 further includes a bonding layer 124 (e.g., a solder layer) positioned on the bottom and / or sides of the power device cavity 122 and configured to bond the power electronic device 126 to the power device cavity 122. The bonding layer 124 may provide bonding by silver sintering, soldering, transient liquid phase bonding (TLP), or any other suitable bonding method.

[0030] Each power device assembly 114 further includes a power electronic device 126. The power electronic device 126 may be an insulated gate bipolar transistor (IGBT), a metal oxide semiconductor field effect transistor (MOSFET), or any other suitable power device. The power electronic device 126 is embedded in the power device cavity 122. The power electronic device 126 may be bonded, soldered, or glued to the power device cavity 122 via a bonding layer 124. The power electronic device 126 includes electrical pads 128 to enable power connection of components with high voltage requirements. The power electronic device 126 further includes smaller electrical pads 130 that can receive control signals from a driver (e.g., a gate driver) and provide signals from sensors (e.g., temperature sensors, current sensors) embedded in the power device assembly 114. The height of the power electronic device 126 and the thickness of the bonding layer 124 are configured to be substantially equal to the depth of the power device cavity 122. This makes the top surface of the power device assembly 114 flush with the first surface 106 .

[0031] The power electronic device 126 includes a bottom electrode (not shown) that is electrically coupled to the first metal layer 118 through the bonding layer 124. An electrical connection to the bottom electrode is then made through the first metal layer 118. By providing power to the device cavity 122 within the first metal layer 118 and electrically coupling the first metal layer 118 to the bottom electrode, no separate conductive component is required to make this electrical connection. This is advantageous because it reduces the number of components, the height, and the overall thermal resistance of the power electronics assembly 100.

[0032] For example, in conventional systems, insulating layers and lubricants may be required. Such layers increase the overall thermal resistance of the power electronic system while isolating the heat source from the cold sink. As discussed in FIGS. 6-7 , the current arrangement facilitates the elimination of layers between the power electronic device 126 (e.g., the heat source) and the heat sink 110. As such, the thermal resistance between the power electronic device 126 and the heat sink 110 is substantially reduced. This is advantageous because it maximizes the cooling of the power electronic device 126 while achieving a compact package size. Furthermore, the improved cooling facilitates increasing the power provided by the power electronic device 126 while maintaining a compact package size.

[0033] Because each power electronic device 126 is positioned in one of the power device cavities 122, each power electronic device 126 is self-aligned with respect to the cold plate assembly 102. In other words, by fixing each power electronic device 126 in a specific position, the position of each power electronic device 126 is known. This reduces the overall assembly tolerance of the power electronics assembly 100.

[0034] Additionally, this arrangement facilitates a PCB being 3D printed directly onto first surface 106, since each component of power electronics assembly 100 is flush with first surface 106 and each cavity self-aligns the respective component. Additionally, the manufacturing process for power electronics assembly 100 does not require a bonding reflow fixture, since fewer components require bonding and the self-alignment feature of power electronics assembly 100 improves bonding precision.

[0035] Referring now to FIG. 8 , a perspective view of the power device assembly of FIG. 1 is shown along section BB of FIG. 4 . The power device assembly 114 forms a channel 802 (e.g., a space, an open area) between the periphery of the power device assembly 114 and the heat sink 110. Prior to printing the PCB on the cold plate assembly 102, the channel 802 may first be filled to be flush with the first surface 106. The channel 802 may be filled by a manual filling process or printed by a 3D printer. This is advantageous because it allows the first surface 106 to be flush across the entire top surface of the cold plate assembly 102. FIG. 8 also shows the channel-like structure of the fins 202. As discussed in more detail above, coolant entering the manifold 104 flows through such channels to enhance cooling.

[0036] 9-10, which show side views of the power device assembly 114 embedded in the power device cavity 122. As shown in FIG. 6, the power electronic device 126 is positioned below the top surface of the power device cavity 122. This is advantageous because it provides additional surface area between the power electronic device 126 and the bonding layer 124. This results in excellent bonding between the power electronic device 126 and the bonding layer 124.

[0037] During cooling, changes in the coefficient of thermal expansion (CTE) of the materials can impart forces to the bonding layer 124 and the power electronics device 126. In conventional systems where the bonding layer 124 and the power electronics device 126 are positioned above the first surface 106, the forces exerted on the bonding layer 124 and the power electronics device 126 are parting forces (e.g., the bonding layer 124 and the power electronics device 126 are forced toward each other in a direction tangential to the first surface 106). This is a concern because the bonding layer 124 and the power electronics device 126 may not be able to handle the strong parting forces, which can cause the power electronics device 126 to separate from the bonding layer 124.

[0038] 10, in response to the application of force, the bonding layer 124 and the power electronic device 126 are subjected to a compressive force. This is advantageous because the bonding layer 124 and the power electronic device 126 are much less likely to separate due to a compressive force compared to a parting force. This improves the reliability of the power electronics assembly 100 during production and operation.

[0039] Referring now to FIG. 11 , a perspective view of another power electronics assembly 1100 is shown, according to another embodiment. As shown, each channel (e.g., channel 802, etc.) between a power device assembly 1114 (e.g., power device assembly 114, etc.) and a heat sink 1110 (e.g., heat sink 110, etc.) is filled to be flush with the first surface 110 of a cold plate assembly 1102 (e.g., cold plate assembly 102, etc.). In order to print a PCB onto the first surface 1106, the first surface 1106 needs to be substantially flat. A substantially flat surface allows the PCB to achieve excellent electrical connection to the power electronic devices, eliminating the need for a reflow process. As discussed in more detail above, the power electronics assembly 1100 is configured so that its components are substantially flat with the first surface. This is advantageous because it reduces the step of flattening the first surface 1106 (e.g., manual or automated filling).

[0040] 12 , a side view of the power electronics assembly 1100 of FIG. 11 taken along cross section CC is shown, in accordance with another embodiment. The power electronics assembly 1100 includes an insulating layer 1206 (e.g., such as insulating layer 120) 3D printed on the first surface 1106. The insulating layer 1206 may be ceramic or any other suitable electrically insulating material. During printing of the insulating layer 1206, a substrate cavity 1208 (e.g., such as substrate cavity 112) is formed in the top surface of the insulating layer 1206.

[0041] Power electronics assembly 1200 further includes a 3D printed metal layer 1210 (such as, for example, metal substrate 118) within substrate cavity 1208. Metal layer 1210 may be copper, aluminum, or any other suitable conductive material. After metal layer 1210 is printed, power devices may be sintered, soldered, or glued to metal layer 1210. This is advantageous because it reduces the number of manufacturing steps to create power electronics assembly 1100. Furthermore, because insulation layer 1206 is printed directly on first surface 1106, a DBM substrate (such as, for example, DBM substrate 116) is no longer needed.

[0042] 13 , a perspective view of a power electronics assembly 1300 according to another embodiment is shown. The power electronics assembly 1300 includes a cold plate assembly 1302 (e.g., cold plate assembly 102 and cold plate 1202). One or more PCBs 1304 are printed on the cold plate assembly 1302. The one or more PCBs 1304 are electrically coupled to and configured to receive power from multiple embedded power devices positioned within the cold plate 1202. Furthermore, as a result of positioning the multiple embedded power devices within the cold plate assembly 1302, the power electronics assembly 1300 has better cooling due to a lower total thermal resistance and a reduced distance between the cold plate assembly 1302 and the multiple embedded power devices.

[0043] In some embodiments, the entire power electronics assembly 1300 is 3D printed. Due to the self-alignment of the heat sink cavities (e.g., heat sink cavity 108, etc.), substrate cavities (e.g., substrate cavity 112, etc.), and power device cavities (e.g., power device cavities 122, etc.), each component has its own reference point. This allows for low assembly tolerances throughout the assembly. This therefore makes it easier to 3D print the entire power electronics assembly 1300, as this reduces system variability.

[0044] From the above, it should be appreciated that embodiments are defined herein that are directed to a power electronics assembly having a DBM layer integrated with a conductive layer, and a cold plate assembly having self-alignment capabilities, which facilitates printing of a PCB onto the cold plate assembly, reduces overall thermal resistance, and improves cooling.

[0045] It should be noted that the terms "substantially" and "about" may be used herein to express the inherent degree of uncertainty that may result from any quantitative comparison, value, measurement, or other representation. Such terms are also used herein to express the extent to which a quantitative representation may vary from the stated basis without resulting in a change in the basic functionality of the subject matter at issue.

[0046] While particular embodiments have been illustrated and described herein, it should be understood that various other changes and modifications can be made without departing from the scope of the claimed subject matter. Moreover, although various aspects of the claimed subject matter have been described herein, such aspects need not be utilized in combination. Therefore, it is intended that the appended claims cover all such changes and modifications that are within the scope of the claimed subject matter.

[0047] It will be apparent to those skilled in the art that various modifications and variations can be made to the embodiments described herein without departing from the scope of the claimed subject matter. Thus, it is intended that this specification cover the modifications and variations of the various embodiments described herein, provided that such modifications and variations come within the scope of the appended claims and their equivalents. The invention disclosed in this specification includes the following aspects. [Aspect 1] 1. A power electronics assembly comprising: a cold plate assembly comprising: a manifold having a heat sink cavity on a first surface thereof; and a heat sink having one or more substrate cavities and disposed within the heat sink cavity; one or more power device assemblies disposed within the one or more substrate cavities, each power device assembly of the one or more power device assemblies comprising: a direct bonded metal (DBM) substrate having a power device cavity, the DBM substrate comprising a first metal layer directly bonded to an insulator layer; and a power device disposed within the power device cavity and electrically coupled to the first metal layer; A power electronics assembly comprising: [Aspect 2] a bonding layer disposed at least partially between the power device cavity and the power device, the bonding layer defining a bond height; the substrate cavity defines a substrate cavity depth; the power device defines a power device height; the substrate cavity depth is substantially equal in value to the power device height together with the junction height; 2. The power electronics assembly of embodiment 1. Aspect 3 2. The power electronics assembly of claim 1, wherein the power device cavity is shaped and sized to receive the power device. Aspect 4 2. The power electronics assembly of claim 1, wherein a top surface of the first metal layer is substantially coplanar with a top surface of the power device. Aspect 5 the first surface is substantially coplanar with a top surface of the power device; the first metal layer and the power device form a channel extending around the power device; the cooling plate assembly is configured to print the channel until a top surface of the channel is flush with the first surface; 2. The power electronics assembly of claim 1, wherein the cooling plate assembly is configured to have a printed circuit board (PCB) substrate printed on the first surface. Aspect 6 2. The power electronics assembly of claim 1, wherein the cooling plate assembly is configured such that an electrical insulating layer and an s-cell are printed on the first surface. Aspect 7 an inlet of the manifold configured to receive a coolant; an outlet of the manifold configured to provide a coolant, the outlet fluidly coupled to the inlet; a fin disposed between the inlet and the outlet, the fin further disposed fluidly downstream of the inlet and configured to disrupt the flow of the coolant downstream of the inlet; 10. The power electronics assembly of claim 1, further comprising: Aspect 8 1. A power device assembly comprising: a direct bonded metal (DBM) substrate comprising a first metal layer directly bonded to an insulator layer and comprising one or more power device cavities; one or more power devices respectively disposed in one of the one or more power device cavities, each of the one or more power devices being electrically coupled to the first metal layer; A power device assembly comprising: Aspect 9 9. The power device assembly of claim 8, further comprising a first side of a heat sink assembly, the DBM substrate being disposed within a heat sink cavity in the first side. Aspect 10 10. The power device assembly of claim 9, wherein the first surface is substantially coplanar with a top surface of the power device. Aspect 11 11. The power device assembly of claim 10, wherein the heat sink assembly is configured such that the insulator layer and s-cell are printed on the first surface. Aspect 12 A power device assembly as described in aspect 10, wherein the first metal layer and each of the one or more power devices form a channel extending around each of the power devices, the channel being printed until a top surface of the channel is substantially flush with the first surface. Aspect 13 9. The power device assembly of claim 8, wherein each of the power device cavities is shaped and sized to receive a power device of the one or more power devices. Aspect 14 9. The power device assembly of claim 8, wherein a top surface of the first metal layer is substantially coplanar with a top surface of the power device. Aspect 15 1. A method of forming a power electronics assembly, comprising: positioning a heat sink within a heat sink cavity on a first surface of a cooling plate manifold, the heat sink comprising one or more substrate cavities; embedding one or more power device assemblies within the one or more substrate cavities, each power device assembly comprising a direct bonded metal (DBM) substrate comprising a first metal layer bonded to an insulator layer, the DBM substrate comprising a power device cavity; disposing a bonding layer at least partially within the power device cavity; bonding a power device to the power device cavity through the bonding layer, the power device being electrically coupled to the first metal layer; A method comprising: Aspect 16 the bonding layer defines a bond height; the power device cavity defines a power device cavity depth; the power device defines a power device height; 16. The method of claim 15, wherein the power device cavity depth is substantially equal in value to the power device height together with the junction height. Aspect 17 16. The method of claim 15, wherein the power device cavity is shaped and sized to receive the power device. Aspect 18 further comprising printing a printed circuit board (PCB) substrate onto the first surface; a top surface of the first metal layer substantially coplanar with a top surface of the power device; The method of embodiment 15. Aspect 19 16. The method of embodiment 15, further comprising printing the insulator layer and s-cell on the first surface, wherein a top surface of the first metal layer is substantially coplanar with a top surface of the power device. Aspect 20 receiving a coolant through an inlet of the cold plate manifold; providing a coolant through an outlet of the cold plate manifold, the outlet being fluidly coupled to the inlet; disrupting the flow of coolant downstream of the inlet via fins, the fins being disposed between the inlet and the outlet, the fins further being disposed fluidly downstream of the inlet; 16. The method of embodiment 15, further comprising:

Claims

1. 1. A power electronics assembly comprising: a cold plate assembly comprising: a manifold having a heat sink cavity on a first surface thereof; and a heat sink having one or more substrate cavities and disposed within the heat sink cavity; one or more power device assemblies disposed within the one or more substrate cavities, each power device assembly of the one or more power device assemblies comprising: a direct bonded metal (DBM) substrate comprising a power device cavity, the direct bonded metal layer comprising a first metal layer directly bonded to an insulator layer; and a power device disposed within the power device cavity and electrically coupled to the first metal layer; Equipped with the first surface is substantially coplanar with a top surface of the power device; the first metal layer and the power device form a channel extending around the power device; the cooling plate assembly is configured to print the channel until a top surface of the channel is flush with the first surface; the cooling plate assembly is configured such that a printed circuit board (PCB) substrate is printed on the first surface; Power electronics assembly.

2. A power electronics assembly, a cold plate assembly comprising: a manifold having a heat sink cavity on a first surface thereof; and a heat sink having one or more substrate cavities and disposed within the heat sink cavity; one or more power device assemblies disposed within the one or more substrate cavities, each power device assembly of the one or more power device assemblies comprising: a direct bonded metal (DBM) substrate comprising a power device cavity, the direct bonded metal layer comprising a first metal layer directly bonded to an insulator layer; and a power device disposed within the power device cavity and electrically coupled to the first metal layer; Equipped with the cooling plate assembly is configured such that an electrical insulating layer and an s-cell are printed on the first surface; Power electronics assembly.

3. a bonding layer disposed at least partially between the power device cavity and the power device, the bonding layer defining a bond height; the substrate cavity defines a substrate cavity depth; the power device defines a power device height; the substrate cavity depth is substantially equal in value to the power device height together with the junction height; A power electronic assembly according to claim 1 or claim 2.

4. 3. The power electronics assembly of claim 1 or claim 2, wherein the power device cavity is shaped and sized to receive the power device.

5. 3. The power electronics assembly of claim 1 or claim 2, wherein a top surface of the first metal layer is substantially coplanar with a top surface of the power device.

6. an inlet of the manifold configured to receive a coolant; an outlet of the manifold configured to provide a coolant, the outlet fluidly coupled to the inlet; a fin disposed between the inlet and the outlet, the fin further disposed fluidly downstream of the inlet and configured to disrupt the flow of the coolant downstream of the inlet; The power electronics assembly of claim 1 or claim 2, further comprising:

7. 1. A power device assembly comprising: a direct bonded metal (DBM) substrate comprising a first metal layer directly bonded to an insulator layer and comprising one or more power device cavities; one or more power devices respectively disposed in one of the one or more power device cavities, each of the one or more power devices being electrically coupled to the first metal layer; a first surface of the heat sink assembly; Equipped with the DBM substrate is disposed within a heat sink cavity on the first surface; the first surface is substantially coplanar with a top surface of the power device; the heat sink assembly is configured such that the insulator layer and the s-cells are printed on the first surface; Power device assembly.

8. A power device assembly comprising: a direct bonded metal (DBM) substrate comprising a first metal layer directly bonded to an insulator layer and comprising one or more power device cavities; one or more power devices respectively disposed in one of the one or more power device cavities, each of the one or more power devices being electrically coupled to the first metal layer; a first surface of the heat sink assembly; Equipped with the DBM substrate is disposed within a heat sink cavity on the first surface; the first surface is substantially coplanar with a top surface of the power device; the first metal layer and each of the one or more power devices form a channel extending around each of the power devices, the channel being printed until a top surface of the channel is substantially flush with the first surface. Power device assembly.

9. 9. The power device assembly of claim 7 or claim 8, wherein each of the power device cavities is shaped and sized to receive a power device of the one or more power devices.

10. 9. The power device assembly of claim 7 or claim 8, wherein a top surface of the first metal layer is substantially coplanar with a top surface of the power device.

11. 1. A method of forming a power electronics assembly, comprising: positioning a heat sink within a heat sink cavity on a first surface of a cooling plate manifold, said heat sink comprising one or more substrate cavities; embedding one or more power device assemblies within the one or more substrate cavities, each power device assembly comprising a direct bonded metal (DBM) substrate comprising a first metal layer bonded to an insulator layer, the DBM substrate comprising a power device cavity; disposing a bonding layer at least partially within the power device cavity; bonding a power device to the power device cavity through the bonding layer, the power device being electrically coupled to the first metal layer; printing a printed circuit board (PCB) substrate onto the first surface; Including, wherein a top surface of the first metal layer is substantially coplanar with a top surface of the power device.

12. A method of forming a power electronics assembly, comprising: positioning a heat sink within a heat sink cavity on a first surface of a cooling plate manifold, said heat sink comprising one or more substrate cavities; embedding one or more power device assemblies within the one or more substrate cavities, each power device assembly comprising a direct bonded metal (DBM) substrate comprising a first metal layer bonded to an insulator layer, the DBM substrate comprising a power device cavity; disposing a bonding layer at least partially within the power device cavity; bonding a power device to the power device cavity through the bonding layer, the power device being electrically coupled to the first metal layer; printing the insulator layer and s-cells onto the first surface; Including, wherein a top surface of the first metal layer is substantially coplanar with a top surface of the power device.

13. the bonding layer defines a bond height; the power device cavity defines a power device cavity depth; the power device defines a power device height; 13. The method of claim 11 or claim 12, wherein the power device cavity depth is substantially equal in value to the power device height together with the junction height.

14. 13. The method of claim 11 or claim 12, wherein the power device cavity is shaped and sized to receive the power device.

15. receiving a coolant through an inlet of the cold plate manifold; providing a coolant through an outlet of the cold plate manifold, the outlet being fluidly coupled to the inlet; disrupting the flow of coolant downstream of the inlet via fins, the fins being disposed between the inlet and the outlet, the fins further being disposed fluidly downstream of the inlet; 13. The method of claim 11 or claim 12, further comprising:

Images