Holding device

Abstract

To equalize the temperature distribution of a workpiece held by a holding device.SOLUTION: A plate-shaped member 10 has a first surface S1 and a second surface S2 located on the opposite side of the first surface S1, and includes at least a first hole 52 formed as a recess from the second surface S2. A base member 20 has a third surface S3 and a fourth surface S4 located on the opposite side of the third surface S3, and includes a second hole 22 formed to penetrate through the third surface S3 and the fourth surface S4. A bonding layer 30 that bonds the second surface S2 and the third surface S3 includes a filled portion 38 in which an adhesive constituting the bonding layer 30 is filled between the second surface S2 and the third surface S3, a third hole 32 that connects the first hole 52 and the second hole 22 at a location where the first hole 52 and the second hole 22 are adjacent, and a transition region 33 in which the amount of adhesive disposed continuously decreases toward the third hole 32 between the filled portion 38 and the third hole 32.SELECTED DRAWING: Figure 3

Description

[Technical Field]

[0001] The present disclosure relates to a retention device. [Background technology]

[0002] One example of a holding device is an electrostatic chuck described in Patent Document 1. This electrostatic chuck includes a plate-shaped member having a holding surface for holding a semiconductor wafer, which is an object to be processed, a base member, and a bonding layer on which an adhesive is disposed to bond the lower surface of the plate-shaped member, which is located on the opposite side from the holding surface, to the base member.

[0003] The plate-shaped member of this electrostatic chuck has a first through hole formed therein, penetrating the holding surface and the lower surface. The base member has a second through hole formed therein, vertically penetrating the base member, at a position communicating with the first through hole. The first through hole and the second through hole communicate with each other, forming a gas hole for flowing a thermally conductive gas from inside the base member toward the holding surface of the plate-shaped member and a lift pin hole for inserting a lift pin penetrating the electrostatic chuck. The base member also has a fourth through hole formed therein, vertically penetrating the base member, at a position not communicating with the first through hole. The fourth through hole is configured as a terminal hole for arranging a terminal member for electrically connecting the chuck electrode and heater electrode provided inside the plate-shaped member to an external power source. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Japanese Patent Publication No. 2023-1604 Summary of the Invention [Problem to be solved by the invention]

[0005] The bonding layer located between the first and second through holes has a third through hole coaxial with the first and second through holes and larger in diameter than the first and second through holes. That is, in the bonding layer near the gas holes and lift pin holes, there are areas where no adhesive is applied. Such areas also exist near the terminal holes and the outer edges of the base member and plate-like member. Because the areas where no adhesive is applied contain a gas layer, they have lower thermal conductivity than areas that do not contain a gas layer. Therefore, in a high-temperature environment, the temperatures near the gas holes, lift pin holes, and terminal holes, and near the outer edges of the base member and plate-like member, where no adhesive is applied, tend to be higher than the temperatures of the areas where adhesive is applied. To ensure uniform processing accuracy, such as etching, on semiconductor wafers, it is preferable for the temperature of the entire semiconductor wafer to be uniform during processing.

[0006] The present disclosure was made in light of the above circumstances, and an object of the present disclosure is to make the temperature distribution of an object held by a holding device uniform. [Means for solving the problem]

[0007] The holding device of the present disclosure comprises: a plate-like member having a first surface and a second surface located opposite the first surface, and having a first hole portion formed recessed from at least the second surface; a base member having a third surface arranged opposite the second surface and a fourth surface located opposite the third surface, and having a second hole portion formed to penetrate the third surface and the fourth surface; and a bonding layer formed between the second surface and the third surface and bonding the second surface and the third surface, the bonding layer comprising: a filling portion between the second surface and the third surface filled with adhesive that constitutes the bonding layer; a third hole portion that connects the first hole portion and the second hole portion at a location contacting the first hole portion and the second hole portion; and a change region between the filling portion and the third hole portion, in which the amount of adhesive disposed continuously decreases as the area approaches the third hole portion. [Effects of the Invention]

[0008] According to the present disclosure, the temperature distribution of the workpiece held by the holding device can be made uniform. [Brief explanation of the drawings]

[0009] [Figure 1] FIG. 1 is an explanatory diagram that schematically shows the general configuration of a holding device according to a first embodiment. [Figure 2] FIG. 2 is a cross-sectional view schematically illustrating the internal structure of the holding device according to the first embodiment. [Figure 3] FIG. 3 is a schematic cross-sectional view showing an enlarged view of the periphery of the first hole portion, the second hole portion, and the third hole portion constituting the through hole of the holding device according to the first embodiment, and the periphery of the outer edge portion of the plate-like member. [Figure 4] FIG. 4 is a schematic cross-sectional view showing an enlarged view of the periphery of a first hole portion, a second hole portion, and a third hole portion that constitute the terminal hole of the holding device according to the first embodiment. [Figure 5] FIG. 5 is a schematic cross-sectional view showing an enlarged view of the periphery of the first hole portion, the second hole portion, and the third hole portion constituting the through hole of the holding device according to the second embodiment, and the periphery of the outer edge portion of the plate-like member. [Figure 6] FIG. 6 is a schematic cross-sectional view showing an enlarged view of the periphery of the first hole portion, second hole portion, and third hole portion constituting the through hole of the holding device according to the third embodiment, and the periphery of the outer edge portion of the plate-like member. [Figure 7] FIG. 7 is a schematic cross-sectional view showing an enlarged view of the periphery of the first hole portion, the second hole portion, and the third hole portion constituting the through hole of the holding device according to the fourth embodiment, and the periphery of the outer edge portion of the plate-like member. [Figure 8] FIG. 8 is a schematic cross-sectional view showing an enlarged view of the periphery of the first hole portion, the second hole portion, and the third hole portion constituting the through hole of the holding device according to the fifth embodiment, and the periphery of the outer edge portion of the plate-like member. [Figure 9] FIG. 9 is a schematic cross-sectional view showing an enlarged view of the periphery of the first hole portion, the second hole portion, and the third hole portion constituting the through hole of the holding device according to the sixth embodiment, and the periphery of the outer edge portion of the plate-like member. [Figure 10]FIG. 10 is a schematic cross-sectional view showing an enlarged view of the periphery of the outer edge of a plate-like member of a holding device according to the seventh embodiment. [Figure 11] FIG. 11 is a schematic cross-sectional view showing an enlarged view of the periphery of the outer edge of a plate-like member of a holding device according to another embodiment. [Figure 12] FIG. 12 is a schematic cross-sectional view showing an enlarged view of the periphery of the outer edge of a plate-like member of a holding device according to another embodiment. [Figure 13] FIG. 13 is a schematic cross-sectional view showing an enlarged view of the periphery of the outer edge of a plate-like member of a holding device according to another embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0010] First, embodiments of the present disclosure will be listed and described. (1) The holding device of the present disclosure comprises a plate-like member having a first surface and a second surface opposite the first surface and having a first hole portion recessed from at least the second surface; a base member having a third surface opposite the second surface and a fourth surface opposite the third surface and having a second hole portion formed to penetrate the third surface and the fourth surface; and a bonding layer formed between the second surface and the third surface and bonding the second surface and the third surface, wherein the bonding layer comprises a filling portion filled with adhesive constituting the bonding layer between the second surface and the third surface, a third hole portion connecting the first hole portion and the second hole portion at a location where the filling portion and the third hole portion are in contact with the third hole portion, and a change region between the filling portion and the third hole portion in which the amount of adhesive disposed continuously decreases as the area approaches the third hole portion.

[0011] In the transition region, the amount of adhesive that constitutes the bonding layer changes so as to continuously decrease from the filled portion toward the third hole portion. In this case, the thermal conductivity in the transition region gradually decreases from the filled portion toward the third hole portion, so the difference between the thermal conductivity of the filled portion and the thermal conductivity in the transition region becomes smaller. In addition, the difference between the thermal conductivity of the transition region and the thermal conductivity of the third hole portion also becomes smaller. This results in a gentler temperature gradient between the filled portion and the transition region, and between the transition region and the third hole portion. This results in a more uniform temperature distribution of the workpiece held by the holding device.

[0012] (2) The holding device of the present disclosure comprises a plate-like member having a first surface and a second surface located opposite the first surface, a base member having a third surface arranged opposite the second surface, and a bonding layer formed between the second surface and the third surface and bonding the second surface and the third surface together, the bonding layer comprising: a filling portion between the second surface and the third surface filled with adhesive constituting the bonding layer; an outer edge portion in contact with the outer edge of the plate-like member or the outer edge of the base member; and a change region between the filling portion and the outer edge portion in which the amount of adhesive disposed continuously decreases as the outer edge portion is approached.

[0013] In the transition region, the amount of adhesive that constitutes the bonding layer changes so as to continuously decrease from the filling portion toward the outer edge. In this case, the thermal conductivity in the transition region gradually decreases from the filling portion toward the outer edge, so the difference between the thermal conductivity of the filling portion and the thermal conductivity of the transition region becomes smaller. In addition, the difference between the thermal conductivity of the transition region and the thermal conductivity of the outer edge also becomes smaller. This results in a gentler temperature gradient between the filling portion and the transition region, and between the transition region and the outer edge. Therefore, the temperature distribution of the workpiece held by the holding device is made uniform.

[0014] (3) In the holding device described in (1) or (2), it is preferable that the end face of the adhesive constituting the change area has at least one of the following: an end face facing the second surface, which is a first end face inclined relative to the third surface and extending from the third surface toward the second surface; or an end face facing the third surface, which is inclined relative to the second surface and extending from the second surface toward the third surface.

[0015] Since the end face of the adhesive constituting the transition region is configured to have a shape having the first end face or the second end face, the amount of the bonding layer in the transition region of the adhesive part tends to decrease gradually, which tends to make the temperature gradient between the filling part and the transition region, and the temperature gradient between the transition region and the third hole part or the outer edge part, both gentler.

[0016] (4) In the holding device described in (3), it is preferable that the change area has both the first end face and the second end face, and that a first end where the first end face and the third surface meet and a second end where the second end face and the second surface meet are located on the opposite side of the filling section in the change area, and that the first end face and the second end face meet in the filling section, so that the adhesive has a shape that opens in the direction opposite to the filling section.

[0017] With this configuration, the temperature changes of the second surface and the third surface tend to occur continuously in the transition region toward the third hole or the outer edge, which further reduces the temperature gradient between the filling portion and the transition region, and between the transition region and the third hole or the outer edge.

[0018] (5) In the holding device described in (4), it is preferable that the distance from the filling portion to the first end and the distance from the filling portion to the second end are different.

[0019] The thermal conductivity of the base member may differ from that of the plate-shaped member. By adjusting the positions of the first end and the second end of the holding device, the thermal conductivity of the transition region can be adjusted according to the thermal conductivity of the base member and the thermal conductivity of the plate-shaped member. This further reduces the temperature gradient between the filling portion and the transition region, and between the transition region and the third hole portion or the outer edge portion.

[0020] (6) In the holding device described in any one of (1) to (5), it is preferable that another adhesive having a thermal conductivity lower than that of the adhesive is disposed in at least a portion of the portion of the change region where the bonding layer is not disposed.

[0021] With this configuration, the difference between the thermal conductivity of the transition area and that of the filling portion is smaller than when no other adhesive is disposed in the transition area. The difference between the thermal conductivity of the transition area and that of the third hole portion or outer edge portion is also smaller. In this case, the temperature gradient between the filling portion and the transition area, and the temperature gradient between the transition area and the third hole portion or outer edge portion are each further gentler. Therefore, the temperature gradient between the filling portion and the transition area, and the temperature gradient between the transition area and the third hole portion or outer edge portion are each further gentler.

[0022] <Details of the first embodiment of the present disclosure> The schematic configuration of a first embodiment of the present disclosure will be described with reference to FIGS. 1, 2, and 4. The present disclosure is not limited to these examples, but is defined by the claims, and all modifications within the meaning and scope of the claims are intended to be included. In the following description, for multiple identical components, only some components may be designated by reference numerals, and the reference numerals for other components may be omitted. In this specification, the configuration of the holding device 1 will be described with the positive Z-axis direction as the upward direction, the negative Z-axis direction as the downward direction, and the XY plane direction as the horizontal direction. However, in actual use of the holding device 1, different arrangements may be used. Furthermore, in this specification, "horizontal" and "parallel" are intended to include arrangements that are recognized as substantially horizontal and parallel.

[0023] The holding device 1 of the first embodiment is an electrostatic chuck that can attract and hold a workpiece (hereinafter referred to as a "wafer W"). The workpiece may be a semiconductor wafer, a glass substrate, or the like. The electrostatic chuck is attached, for example, inside a processing chamber of a semiconductor manufacturing device (not shown), and is used to perform various processes, such as film formation and etching, on the wafer W using plasma.

[0024] 1, the holding device 1 of the first embodiment includes a plate-shaped member 10 and a base member 20. The plate-shaped member 10 and the base member 20 are bonded to each other by a bonding layer 30 disposed between the plate-shaped member 10 and the base member 20.

[0025] The base member 20 is mainly composed of a metal such as aluminum or an aluminum alloy. The base member 20 is a disk-shaped member with a larger diameter than the plate-shaped member 10, and can be formed into a shape with a diameter of about 340 mm and a thickness of about 20 mm, for example.

[0026] The base member 20 has a third surface S3 disposed on the plate-shaped member 10 side, and a fourth surface S4 located on the opposite side to the third surface S3. The third surface S3 and the fourth surface S4 are each a surface portion extending in the horizontal direction. The third surface S3 is disposed on the upper side of the base member 20, and the fourth surface S4 is disposed on the lower side of the base member 20. The third surface S3 is bonded to a second surface S2 of the plate-shaped member 10 (described later) by a bonding layer 30.

[0027] A coolant flow path 21 is provided inside the base member 20. The coolant flow path 21 is connected to a coolant circulation device (not shown). The coolant circulation device is configured to be able to circulate a coolant through the coolant flow path 21. A fluorine-based inert liquid, water, or the like is used as the coolant. When the coolant flows through the coolant flow path 21, the base member 20 is cooled. The plate-shaped member 10 is cooled by heat conduction between the base member 20 and the plate-shaped member 10 via the bonding layer 30. This cools the wafer W held by protrusions (not shown) formed on a first surface S1 of the plate-shaped member 10 (described later).

[0028] 2, a second hole portion 22 is provided inside the base member 20. The second hole portion 22 is a hole portion formed so as to penetrate the base member 20 in the up-down direction. The second hole portion 22 is a part of a through hole 60 formed in the holding device 1. The second hole portion 22 communicates with a first hole portion 52 of the plate-like member 10 (described later) via a third hole portion 32 (described later) formed in the bonding layer 30, thereby constituting the through hole 60 that penetrates the holding device 1 in the up-down direction.

[0029] 4 is provided inside the base member 20. The second hole portion 23 is formed to penetrate the base member 20 in the vertical direction, similar to the second hole portion 22. The second hole portion 23 communicates with a first hole portion 53 of the plate-like member 10 (described later) via a third hole portion 32 formed in the bonding layer 30, thereby forming a terminal hole 70. The terminal hole 70 is a hole portion that extends in the vertical direction inside the holding device 1 to accommodate a rod-shaped power supply terminal 26 for supplying power to a chuck electrode 51 (described later) inside the holding device 1.

[0030] An insulating tube 71 is inserted into the inside of the second hole portion 23. The insulating tube 71 is a cylindrical tube made of an insulating material such as insulating synthetic resin or alumina (Al2O3). The outer diameter of the insulating tube 71 is approximately the same as the inner diameter of the second hole portion 23. The insulating tube 71 is inserted into the inside of the terminal hole 70 to improve the insulation between the base member 20 and the power supply terminal 26, etc. The power supply terminal 26 is disposed inside the insulating tube 71.

[0031] The plate-shaped member 10 is an insulating member whose main component is ceramic. In this embodiment, the plate-shaped member 10 is made of alumina. In other embodiments, the plate-shaped member 10 may be made of other ceramics such as aluminum nitride (AlN). The plate-shaped member 10 is disk-shaped and can be formed into a shape having, for example, a diameter of about 300 mm and a thickness of about 3 mm. The plate-shaped member 10 and the base member 20 may be provided with irregularities or the like for alignment.

[0032] The plate-shaped member 10 has a first surface S1 for holding the wafer W and a second surface S2 (shown in FIG. 2 ) located on the opposite side of the first surface S1. The first surface S1 and the second surface S2 are each a surface portion extending in the horizontal direction. The first surface S1 is located on the upper side of the plate-shaped member 10, and the second surface S2 is located on the lower side of the plate-shaped member 10.

[0033] A chuck electrode 51 is disposed inside the plate-like member 10. The chuck electrode 51 is made of a conductive material including tungsten, molybdenum, and the like. The chuck electrode 51 has, for example, a planar shape substantially parallel to the first surface S1. A power supply terminal 26 is electrically connected to the chuck electrode 51 through a via 73 and a terminal connection portion 72. Power is supplied to the chuck electrode 51 from an external power supply (not shown) through the power supply terminal 26. Supplying power from the external power supply to the chuck electrode 51 through the power supply terminal 26 generates an electrostatic attraction force, which attracts and holds the wafer W on the first surface S1.

[0034] A first hole portion 52 that constitutes a part of the through hole 60 is provided inside the plate-shaped member 10. The first hole portion 52 is formed so as to penetrate the plate-shaped member 10 in the up-down direction at a position that is continuous with the second hole portion 22. In the first embodiment, the inner diameter of the first hole portion 52 is approximately the same as the inner diameter of the second hole portion 22. Note that the inner diameter of the first hole portion 52 may be different from the inner diameter of the second hole portion 22.

[0035] 4 is provided inside the plate-shaped member 10. The first hole 53 is recessed upward from the second surface S2 of the plate-shaped member 10 at a position continuous with the second hole 23. The inner diameter of the first hole 53 is approximately the same as the inner diameter of the second hole 23. However, the inner diameter of the first hole 53 may be different from the inner diameter of the second hole 23.

[0036] 4, an insulating tube 71 is inserted into the inside of the first hole 53, similar to the inside of the second hole 23. A terminal connection portion 72 is disposed in the upper portion of the first hole 53. The terminal connection portion 72 is electrically connected to the lower end of a via 73 that is connected to the chuck electrode 51 and extends downward from the chuck electrode 51. The terminal connection portion 72 is electrically connected to the upper end of a power supply terminal 26 that is housed inside the insulating tube 71.

[0037] The bonding layer 30 is disposed between the second surface S2 of the plate-like member 10 and the third surface S3 of the base member 20. The thickness of the bonding layer 30 is, for example, about 0.1 mm to 1 mm. The bonding layer 30 is made of an adhesive having a predetermined thermal conductivity. The adhesive that forms the bonding layer 30 is, for example, an organic resin material such as silicone resin, fluororesin, acrylic resin, or epoxy resin.

[0038] The bonding layer 30 has a third hole 32 that connects the first hole 52 and the second hole 22. The third hole 32 is a hole formed to vertically penetrate the bonding layer 30 at a location where the third hole 32 contacts the first hole 52 and the second hole 22. As described above, the through hole 60 has the first hole 52, the second hole 22, and the third hole 32. In the first embodiment, the through hole 60 supplies a thermally conductive gas, such as helium gas, to the first surface S1 side of the holding device 1. The thermally conductive gas flowing upward from the first hole 52 fills the gap between the lower surface of the wafer W and the first surface S1, thereby improving thermal conductivity between the lower surface of the wafer W and the first surface S1.

[0039] In addition, a third hole portion 32 is formed in a portion of the bonding layer 30 that contacts the first hole portion 53 and the second hole portion 23, so as to connect the first hole portion 53 and the second hole portion 23. As described above, the terminal hole 70 has the first hole portion 53, the second hole portion 23, and the third hole portion 32. The terminal hole 70 is formed as a space extending in the vertical direction inside the holding device 1, and the power supply terminal 26 can be accommodated inside an insulating tube 71 inserted into the terminal hole 70. The insulating tube 71 may be inserted into the entire terminal hole 70. Alternatively, the insulating tube 71 may be inserted into a portion of the terminal hole 70, such as the portion of the second hole portion 23 and the third hole portion 32.

[0040] 3, the detailed configuration of the shape of the bonding layer 30 in the vicinity of the through hole 60 and in the vicinity of the outer edge 19 of the plate-like member 10 will be described. FIG. 3 shows a cross section of the holding device 1 cut in the XZ plane passing through the through hole 60.

[0041] The first hole portion 52 and the second hole portion 22 are arranged in approximately the same position on each of the plate-shaped member 10 and the base member 20 when viewed from above or below. A third hole portion 32 is formed in the bonding layer 30 arranged between the plate-shaped member 10 and the base member 20. In FIG. 3 , a virtual line L1 is imagined extending in the Z-axis direction, passing through the boundary between a position where no adhesive constituting the bonding layer 30 is arranged between the second surface S2 and the third surface S3 and a position where some adhesive is arranged. The third hole portion 32 corresponds to the space formed in the bonding layer 30 between the virtual line L1 arranged on one side of the through hole 60 in the Y-axis direction and the virtual line L1 arranged on the other side of the through hole 60 in the Y-axis direction. In other words, the third hole portion 32 is a portion of the bonding layer 30 that contacts the first hole portion 52 and the second hole portion 22 and where no adhesive constituting the bonding layer 30 is arranged.

[0042] Meanwhile, the portion of the bonding layer 30 between the second surface S2 and the third surface S3 where the adhesive that constitutes the bonding layer 30 is filled is referred to as the filled portion 38. The filled portion 38 is a region of the bonding layer 30 where a sufficient amount of adhesive is filled between the second surface S2 and the third surface S3 to bond the second surface S2 and the third surface S3. That is, the filled portion 38 is a region where the amount of adhesive that constitutes the bonding layer 30 does not change and is uniform, like the changed region 33. The filled portion 38 may include a region where the adhesive is not completely filled between the second surface S2 and the third surface S3. For example, the adhesive filled in the filled portion 38 may contain tiny air bubbles, or a small portion of the second surface S2 and the third surface S3 may include a portion where the adhesive is not in close contact.

[0043] The bonding layer 30 has a change region 33 between the filling portion 38 and the third hole portion 32, in which the amount of the bonding layer 30 disposed therein continuously decreases toward the third hole portion 32. The bonding layer 30 in the change region 33 has a first end surface 35, which is an end surface facing the second surface S2 and is inclined with respect to the third surface S3 and extends from the third surface S3 toward the second surface S2. The first end surface 35 has a sloped shape extending from the third surface S3 toward the second surface S2 between the virtual lines L1 and L2. The end of the bonding layer 30 where the first end surface 35 and the third surface S3 meet is defined as a first end portion 351. The virtual line L1 is positioned so as to pass through the first end portion 351 and extend in the vertical direction.

[0044] That is, when a cross section of the holding device 1 cut on the XZ plane is viewed from the X direction, the change region 33 is a region where the thickness of the bonding layer 30 continuously decreases from the filling portion 38 toward the third hole portion 32. In Fig. 3, an imaginary line L2 is imagined to extend in the Z axis direction through the boundary between the filling portion 38 and the position where the thickness of the bonding layer 30 between the second surface S2 and the third surface S3 starts to decrease. The change region 33 corresponds to the region in the bonding layer 30 between the imaginary line L1 and the imaginary line L2 that is located closest to the imaginary line L1 in the Y axis direction without passing through the through hole 60.

[0045] In the bonding layer 30, the thermal conductivity of the filling portion 38 is determined based on the thermal conductivity of the adhesive constituting the bonding layer 30. Meanwhile, since no adhesive is disposed in the third hole portion 32 of the bonding layer 30, the thermal conductivity of the third hole portion 32 is determined based on the thermal conductivity of the gas disposed in the third hole portion 32. Generally, the thermal conductivity of gas tends to be much lower than the thermal conductivity of a solid. Therefore, the thermal conductivity of the third hole portion 32 tends to be much lower than the thermal conductivity of the filling portion 38. Therefore, when heat is generated during processing of the wafer W, the temperature in the third hole portion 32 tends to be higher than the temperature in the filling portion 38. Heat is transferred between the base member 20 and the plate-shaped member 10 via the bonding layer 30. The temperature distribution of the plate-shaped member 10 also affects the temperature distribution of the wafer W held on the first surface S1 of the plate-shaped member 10. To achieve uniform processing accuracy, such as etching, on the wafer W, it is preferable that the temperature of the entire wafer W be uniform during processing.

[0046] In the bonding layer 30, a change region 33 is disposed between the filling portion 38 and the third hole portion 32. In the change region 33, a gas layer is disposed in the portion of the change region 33 where the adhesive constituting the change region 33 is not disposed. Therefore, the thermal conductivity of the entire change region 33 is expressed based on the ratio between the amount of adhesive disposed in the change region 33 and the amount of the gas layer. In the change region 33, the amount of adhesive disposed continuously decreases from the filling portion 38 to the third hole portion 32, so the thermal conductivity of the change region 33 gradually decreases from the filling portion 38 to the third hole portion 32. This reduces the difference between the thermal conductivity of the filling portion 38 and the thermal conductivity of the change region 33. Furthermore, the difference between the thermal conductivity of the change region 33 and the thermal conductivity of the third hole portion 32 also reduces. That is, the temperature gradient between the filling portion 38 and the change region 33 and the temperature gradient between the change region 33 and the third hole portion 32 are both gentler. Therefore, by providing the change region 33 in the bonding layer 30, the holding device 1 can reduce the difference in temperature between the filling portion 38 and the third hole portion 32 compared to when the change region 33 is not provided. Therefore, the holding device 1 can achieve a uniform temperature distribution in the bonding layer 30, and ultimately a uniform temperature distribution in the wafer W.

[0047] When a cross section of the holding device 1 cut along the XZ plane is viewed from the X direction, the end surface of the adhesive constituting the transition region 33 has a shape having a surface inclined with respect to the second surface S2 and the third surface S3. Specifically, the adhesive constituting the transition region 33 has a first end surface 35 that is an end surface facing the second surface S2 and is inclined with respect to the third surface S3 and extends from the third surface S3 toward the second surface S2. Because the first end surface 35 has such a shape, the amount of adhesive disposed in the bonding layer 30 in the transition region 33 gradually decreases continuously from the filling portion 38 toward the third hole portion 32. Therefore, the holding device 1 can make the temperature distribution in the bonding layer 30 more uniform.

[0048] In the first embodiment, the bonding layer 30 has a change region 34 similar to the change region 33 near the outer edge 19 of the plate-shaped member 10. The bonding layer 30 has an outer edge portion 39 where no adhesive constituting the bonding layer 30 is disposed, at a position in contact with the outer edge 19 of the plate-shaped member 10. The outer edge portion 39 corresponds to a space formed in the bonding layer 30 in a direction away from the filling portion 38 in the Y-axis direction with respect to the imaginary line L1 disposed closest to the outer edge 19 of the plate-shaped member 10.

[0049] The change region 34 is a region between the filling portion 38 and the outer edge portion 39, where the amount of adhesive that constitutes the bonding layer 30 continuously decreases as the distance to the outer edge portion 39 increases. The change region 34 has a first end surface 35, similar to the change region 33. That is, when a cross section of the holding device 1 cut along the XZ plane is viewed from the X direction, the change region 34 is a region where the thickness of the adhesive that constitutes the bonding layer 30 continuously decreases from the filling portion 38 toward the outer edge portion 39. The imaginary line L1 is positioned at a position that passes through the first end portion 351 and extends in the up-down direction. The change region 34 corresponds to the region between the imaginary line L1 and the imaginary line L2 that is positioned closest to the imaginary line L1.

[0050] The adhesive constituting the bonding layer 30 is not disposed at the outer edge 39 of the bonding layer 30. When the holding device 1 is installed inside a processing chamber of a semiconductor manufacturing device and an etching process or the like is performed on the wafer W held by the holding device 1, the inside of the processing chamber is evacuated. In this case, because no gas is present at the outer edge 39, thermal conduction between the base member 20 and the plate-shaped member 10 via the outer edge 39 of the bonding layer 30 does not occur. Therefore, the temperature of the wafer W held on the first surface S1 of the plate-shaped member 10 at a position corresponding to the outer edge 19 of the plate-shaped member 10 tends to be higher than the temperature of other positions. Because the amount of adhesive disposed in the change region 34 continuously decreases from the filling portion 38 to the outer edge 39, the thermal conductivity of the change region 34 gradually decreases from the filling portion 38 to the outer edge 39. This reduces the difference between the thermal conductivity of the filling portion 38 and the thermal conductivity of the change region 34 and the difference between the thermal conductivity of the change region 34 and the thermal conductivity of the outer edge 39. That is, the temperature gradient between the filling portion 38 and the change region 34 and the temperature gradient between the change region 34 and the outer edge portion 39 are both gentler. Therefore, by providing the change region 34 in the bonding layer 30, the holding device 1 can reduce the temperature difference between the filling portion 38 and the outer edge portion 39 compared to when the change region 34 is not provided. Therefore, the holding device 1 can achieve a uniform temperature distribution in the bonding layer 30, and ultimately a uniform temperature distribution in the wafer W.

[0051] The transition region 34 has a first end surface 35 similar to that of the transition region 33. Therefore, the amount of adhesive that constitutes the transition region 34 is gradually and continuously reduced from the filling portion 38 toward the outer edge portion 39. Therefore, the holding device 1 can make the temperature distribution in the bonding layer 30 more uniform.

[0052] In the first embodiment, the holding device 1 has a change region 33 in the bonding layer 30 not only near the first hole portion 52 that penetrates the plate-shaped member 10 in the vertical direction, but also near the first hole portion 53 that does not penetrate the plate-shaped member 10 in the vertical direction and is formed by being recessed upward from the second surface S2 of the plate-shaped member 10.

[0053] A detailed configuration of the shape of the bonding layer 30 in the vicinity of the terminal hole 70 will be described with reference to Fig. 4. Fig. 4 shows a cross section of the holding device 1 taken along the XZ plane passing through the terminal hole 70 having the first hole portion 53.

[0054] As described above, the terminal hole 70 has a hole formed by the first hole portion 53, the second hole portion 23, and the third hole portion 32, and the insulating tube 71 is inserted into the hole. Because the outer diameter of the insulating tube 71 is smaller than the size of the third hole portion 32 in the left-right direction, the third hole portion 32 is disposed on both the inside and outside of the insulating tube 71. The bonding layer 30 also has a change region 33 between the filling portion 38 and a part of the third hole portion 32 disposed on the outside of the insulating tube 71. This change region 33 also has a first end surface 35. Therefore, the amount of adhesive disposed that constitutes the change region 33 gradually decreases continuously from the filling portion 38 toward the third hole portion 32, and therefore the thermal conductivity of the change region 33 gradually decreases from the filling portion 38 toward the third hole portion 32. This reduces the difference between the thermal conductivity of the filling portion 38 and the thermal conductivity of the change region 33, and the difference between the thermal conductivity of the change region 33 and the thermal conductivity of the third hole portion 32. That is, the temperature gradient between the filling portion 38 and the change region 33 and the temperature gradient between the change region 33 and the third hole portion 32 become gentler. This makes it possible to uniformize the temperature distribution of the wafer W held by the holding device 1.

[0055] In this way, even when the holding device 1 has a hole therein into which the insulating tube 71 is inserted, it is possible to achieve a uniform temperature distribution in the bonding layer 30. That is, a member other than the plate-like member 10 and the base member 20, such as the insulating tube 71, may be disposed near the change region 33. Furthermore, the insulating tube 71 may be inserted not only inside the terminal hole 70 but also inside the through hole 60. In this case, the holding device 1 may have the change region 33 disposed in the bonding layer 30 near the through hole 60 into which the insulating tube 71 is inserted.

[0056] The holding device 1 does not necessarily have to include both the change region 33 and the change region 34 in the bonding layer 30. That is, the holding device 1 only needs to include the change region 33 or the change region 34 in the bonding layer 30 between at least one of the third hole portion 32 or the outer edge portion 39 and the filling portion 38. The holding device 1 does not need to provide the change region 33 near all of the multiple through holes 60 or terminal holes 70, but only needs to provide the change region 33 near specific ones of the multiple through holes 60 or terminal holes 70. The holding device 1 does not need to provide the change region 34 near all of the outer edge portions 39 of the bonding layer 30, but only needs to provide the change region 34 near specific positions on the outer edge portion 39.

[0057] As described above, the holding device 1 includes the plate-like member 10 having a first surface S1 and a second surface S2 located opposite the first surface S1 and having first hole portions 52, 53 formed by being recessed from at least the second surface S2, the base member 20 having a third surface S3 arranged opposite to the second surface S2 and a fourth surface S4 located opposite the third surface S3 and having second hole portions 22, 23 formed so as to penetrate the third surface S3 and the fourth surface S4, and the base member 20 having a third surface S3 arranged opposite to the second surface S2 and a fourth surface S4 located opposite to the third surface S3 and having second hole portions 22, 23 formed so as to penetrate the third surface S3 and the fourth surface S4. and a bonding layer 30 that bonds the second surface S2 and the third surface S3 to the adhesive layer 30. The bonding layer 30 includes a filling portion 38 where the bonding layer 30 is filled between the second surface S2 and the third surface S3, a third hole portion 32 that connects the first hole portions 52, 53 and the second hole portions 22, 23 at the location where the bonding layer 30 contacts the first hole portions 52, 53 and the second hole portions 22, 23, and a change region 33 between the filling portion 38 and the third hole portion 32 where the amount of adhesive that constitutes the bonding layer 30 is continuously reduced as the area approaches the third hole portion 32.

[0058] In the change region 33, the amount of adhesive that constitutes the bonding layer 30 changes so as to continuously decrease from the filling portion 38 toward the third hole portion 32. In this case, the thermal conductivity in the change region 33 gradually decreases from the filling portion 38 toward the third hole portion 32, so the difference between the thermal conductivity of the filling portion 38 and the thermal conductivity of the change region 33 becomes smaller. In addition, the difference between the thermal conductivity of the change region 33 and the thermal conductivity of the third hole portion 32 also becomes smaller. This makes the temperature gradient between the filling portion 38 and the change region 33 and the temperature gradient between the change region 33 and the third hole portion 32 both gentler. Therefore, the temperature distribution of the wafer W held by the holding device 1 is made more uniform.

[0059] The holding device 1 comprises a plate-like member 10 having a first surface S1 and a second surface S2 located opposite the first surface S1, a base member 20 having a third surface S3 arranged opposite the second surface S2, and a bonding layer 30 formed between the second surface S2 and the third surface S3 and bonding the second surface S2 and the third surface S3 together, the bonding layer 30 comprising a filling portion 38 between the second surface S2 and the third surface S3 where the bonding layer 30 is filled, an outer edge portion 39 in contact with the outer edge 19 of the plate-like member 10, and a change region 34 between the filling portion 38 and the outer edge portion 39 where the amount of adhesive constituting the bonding layer 30 continuously decreases as the outer edge portion 39 is approached.

[0060] In the change region 34, the amount of adhesive that constitutes the bonding layer 30 changes so as to continuously decrease from the filling portion 38 toward the outer edge portion 39. In this case, the thermal conductivity in the change region 34 gradually decreases from the filling portion 38 toward the outer edge portion 39, so the difference between the thermal conductivity of the filling portion 38 and the thermal conductivity of the change region 34 becomes smaller. In addition, the difference between the thermal conductivity of the change region 34 and the thermal conductivity of the outer edge portion 39 also becomes smaller. This makes the temperature gradient between the filling portion 38 and the change region 34 and the temperature gradient between the change region 34 and the outer edge portion 39 both gentler. Therefore, the temperature distribution of the wafer W held by the holding device 1 is made more uniform.

[0061] In the holding device 1, the end surface of the adhesive constituting the transition areas 33, 34 has a first end surface 35 that faces the second surface S2, is inclined relative to the third surface S3, and extends from the third surface S3 toward the second surface S2.

[0062] Because the adhesive that forms change regions 33, 34 is configured to have the shape of first end surface 35, the amount of adhesive that forms change regions 33, 34 tends to decrease gradually. Therefore, the temperature gradient between filling portion 38 and change regions 33, 34, and the temperature gradient between change regions 33, 34 and third hole portion 32 or outer edge portion 39 tend to be gentle.

[0063] <Details of the second embodiment of the present disclosure> Next, a second embodiment of the present disclosure will be described with reference to Fig. 5. In the second embodiment, the same components as those in the first embodiment are designated by the same reference numerals, and redundant descriptions of the structure, operation, and effects will be omitted.

[0064] 5 shows a cross section of the holding device 100 of the second embodiment cut along the XZ plane passing through the through hole 60. The holding device 100 includes a plate-shaped member 10, a base member 20, and a bonding layer 300. The bonding layer 300 is disposed between the second surface S2 of the plate-shaped member 10 and the third surface S3 of the base member 20 to bond them together.

[0065] The bonding layer 300 includes a filling portion 38, a third hole portion 32, an outer edge portion 39, a change region 330, and a change region 340. The bonding layer 300 has a change region 330 between the filling portion 38 and the third hole portion 32, in which the amount of adhesive that constitutes the bonding layer 300 continuously decreases the closer it is to the third hole portion 32. Similar to the change region 33 of the first embodiment, the change region 330 is a region in which the thickness of the adhesive that constitutes the bonding layer 300 continuously decreases from the filling portion 38 toward the third hole portion 32 when the cross section of the holding device 100 cut in the XZ plane is viewed from the X direction.

[0066] The transition region 330 includes a first end surface 350. The first end surface 350 is an end surface of the adhesive facing the second surface S2 and extends from the third surface S3 toward the second surface S2 at an angle relative to the third surface S3. As shown in FIG. 5 , the first end surface 350 is curved, unlike the planar shape of the first end surface 35 of the first embodiment. Even when the first end surface 350 has such a shape, the amount of adhesive that constitutes the bonding layer 300 in the transition region 330 gradually decreases continuously from the filling portion 38 toward the third hole portion 32.

[0067] Furthermore, bonding layer 300 has a change region 340 between filling portion 38 and outer edge portion 39, in which the amount of bonding layer 300 disposed therein continuously decreases toward outer edge portion 39. Similar to bonding layer 300 in change region 330, change region 340 also has first end surface 350. Even when first end surface 350 has a curved shape, the amount of adhesive constituting bonding layer 300 disposed in change region 340 continuously and gently decreases from filling portion 38 toward outer edge portion 39.

[0068] Therefore, the holding device 100 can make the temperature distribution in the bonding layer 300 uniform. In the change regions 330, 340, the first end face 350 does not need to be entirely formed of a curved surface, and the first end face 350 may be formed to include a curved portion and a flat portion.

[0069] <Details of the third embodiment of the present disclosure> Next, a third embodiment of the present disclosure will be described with reference to Fig. 6. In the third embodiment, the same components as those in the first and second embodiments are designated by the same reference numerals, and redundant descriptions of the structure, operation, and effects will be omitted.

[0070] 6 shows a cross section of a holding device 101 of the third embodiment cut along the XZ plane passing through a through hole 60. The holding device 101 includes a plate-shaped member 10, a base member 20, and a bonding layer 301. The bonding layer 301 is disposed between the second surface S2 of the plate-shaped member 10 and the third surface S3 of the base member 20 to bond them together.

[0071] The bonding layer 301 includes a filling portion 38, a third hole portion 32, an outer edge portion 39, a change region 331, and a change region 341. The bonding layer 301 has a change region 331 between the filling portion 38 and the third hole portion 32, in which the amount of adhesive that constitutes the bonding layer 301 continuously decreases the closer it is to the third hole portion 32. Similar to the change region 33 in the first embodiment, the change region 331 is a region in which the thickness of the adhesive that constitutes the bonding layer 301 continuously decreases from the filling portion 38 toward the third hole portion 32 when the cross section of the holding device 101 cut on the XZ plane is viewed from the X direction.

[0072] The transition region 331 includes a second end surface 36. The second end surface 36 is an end surface facing the third surface S3 and is an end surface of the adhesive constituting the transition region 331, extending from the second surface S2 toward the third surface S3 at an angle relative to the second surface S2. The end of the bonding layer 301 where the second end surface 36 and the second surface S2 meet is defined as a second end surface 361. The imaginary line L1 is positioned at a position extending in the vertical direction through the second end surface 361. The second end surface 36 has an inclined surface shape extending from the second surface S2 toward the third surface S3 between the imaginary line L1 and the imaginary line L2. That is, the second end surface 36 has an inclined surface shape that is vertically symmetrical to the first end surface 35 of the first embodiment. Because the second end surface 36 has such a shape, the amount of adhesive constituting the bonding layer 301 disposed in the transition region 331 gradually decreases continuously from the filling portion 38 toward the third hole portion 32.

[0073] Furthermore, bonding layer 301 has a change region 341 between filling portion 38 and outer edge portion 39, in which the amount of adhesive that constitutes bonding layer 301 continuously decreases the closer to outer edge portion 39. Like bonding layer 301 in change region 341, bonding layer 301 in change region 341 also has second end surface 36.

[0074] Therefore, the holding device 101 can make the temperature distribution in the bonding layer 301 more uniform. As shown in Fig. 6, the second end face 36 has a planar shape in the transition regions 331 and 341. However, the second end face 36 is not limited to having a planar shape. Like the first end face 350 of the second embodiment, the second end face 36 may be formed in a curved shape or may be formed to include a curved portion and a planar portion.

[0075] As described above, in the holding device 101, the end face of the adhesive constituting the change area 331, 341 has a second end face 36 that faces the third surface S3, is inclined relative to the second surface S2, and extends from the second surface S2 toward the third surface S3.

[0076] Because the adhesive constituting bonding layer 301 arranged in change regions 331, 341 is configured to have the shape of second end surface 36, the amount of adhesive constituting change regions 331, 341 tends to gradually decrease. Therefore, the temperature gradient between filling portion 38 and change regions 331, 341, and the temperature gradient between change regions 331, 341 and third hole portion 32 or outer edge portion 39 tend to gradually decrease.

[0077] <Details of the Fourth Embodiment of the Present Disclosure> Next, a fourth embodiment of the present disclosure will be described with reference to Fig. 7. In the fourth embodiment, the same components as those in the first to third embodiments are designated by the same reference numerals, and redundant descriptions of the structure, operation, and effects will be omitted.

[0078] 7 shows a cross section of a holding device 102 of the fourth embodiment taken along the XZ plane passing through the through hole 60. The holding device 102 includes a plate-shaped member 10, a base member 20, and a bonding layer 302. The bonding layer 302 is disposed between the second surface S2 of the plate-shaped member 10 and the third surface S3 of the base member 20 to bond them together.

[0079] The bonding layer 302 includes a filling portion 38, a third hole portion 32, an outer edge portion 39, a change region 332, and a change region 342. The bonding layer 302 has the change region 332 between the filling portion 38 and the third hole portion 32, in which the amount of adhesive that constitutes the bonding layer 302 is continuously reduced the closer it is to the third hole portion 32.

[0080] The transition region 332 has both a first end surface 35 and a second end surface 36. The first end surface 35, facing the second surface S2, is inclined relative to the third surface S3 and extends from the third surface S3 toward the second surface S2. The second end surface 36, facing the third surface S3, is inclined relative to the second surface S2 and extends from the second surface S2 toward the third surface S3. In the fourth embodiment, a first end 351 of the first end surface 35 and a second end 361 of the second end surface 36 are located at the same position in the Y-axis direction. A virtual line L1 is located at a position extending in the vertical direction through the first end 351 and the second end 361. An end of the first end surface 35 opposite the first end 351 and an end of the second end surface 36 opposite the second end 361 meet at the filling portion 38. Since the first end face 35 and the second end face 36 are arranged in this manner in the change region 332, the adhesive that constitutes the change region 332 has a shape that opens toward the third hole portion 32, which is in the opposite direction to the filling portion 38.

[0081] Like the bonding layer 302 in the transition region 332, the bonding layer 302 in the transition region 342 has both a first end surface 35 and a second end surface 36. The first end surface 35 faces the second surface S2 and is inclined relative to the third surface S3, extending from the third surface S3 toward the second surface S2. The second end surface 36 faces the third surface S3 and is inclined relative to the second surface S2, extending from the second surface S2 toward the third surface S3. An end of the first end surface 35 opposite the first end 351 and an end of the second end surface 36 opposite the second end 361 are in contact with each other at the filling portion 38. Because the first end surface 35 and the second end surface 36 are arranged in this manner in the transition region 342, the adhesive constituting the transition region 342 has a shape that opens toward the outer edge portion 39, which is the opposite direction from the filling portion 38.

[0082] By configuring the change regions 332, 342 in this manner, when a cross section of the holding device 102 cut on the XZ plane is viewed from the X direction, the thickness of the adhesive in contact with the second surface S2 continuously decreases from the filling portion 38 toward the third hole portion 32 or the outer edge portion 39. The thickness of the adhesive in contact with the third surface S3 also continuously decreases from the filling portion 38 toward the third hole portion 32. Therefore, in the change regions 332, 342, the temperature changes that occur on each of the second surface S2 and the third surface S3 tend to be continuous from the filling portion 38 toward the third hole portion 32 or the outer edge portion 39. Therefore, the holding device 102 can make the temperature distribution in the bonding layer 302 more uniform.

[0083] As described above, in the holding device 102, the change regions 332, 342 have both the first end face 35 and the second end face 36, and the first end 351 where the first end face 35 and the third surface S3 contact and the second end 361 where the second end face 36 and the second surface S2 contact are located on the opposite side of the filling section 38 in the change region 332, and as the first end face 35 and the second end face 36 contact in the filling section 38, the adhesive that constitutes the change regions 332, 342 has a shape that opens in the direction opposite to the filling section 38.

[0084] With this configuration, the temperature changes of the second surface S2 and the third surface S3 tend to occur continuously toward the third hole portion or the outer edge portion in the change regions 332, 342. Therefore, the holding device 102 can further moderate the temperature gradient between the filling portion 38 and the change region 332, and the temperature gradient between the change regions 332, 342 and the third hole portion 32 or the outer edge portion 39.

[0085] <Details of the fifth embodiment of the present disclosure> Next, a fifth embodiment of the present disclosure will be described with reference to Fig. 8. In the fifth embodiment, the same components as those in the first to fourth embodiments are designated by the same reference numerals, and redundant descriptions of the structure, operation, and effects will be omitted.

[0086] 8 shows a cross section of the holding device 103 of the fifth embodiment cut along the XZ plane passing through the through hole 60. The holding device 103 includes a plate-shaped member 10, a base member 20, and a bonding layer 303. The bonding layer 303 is disposed between the second surface S2 of the plate-shaped member 10 and the third surface S3 of the base member 20 to bond them together.

[0087] The bonding layer 303 includes a filling portion 38, a third hole 32, an outer edge portion 39, a change region 333, and a change region 343. The bonding layer 303 includes a change region 333 between the filling portion 38 and the third hole 32. The change region 333 of the bonding layer 303 continuously decreases in amount as the bonding layer 303 approaches the third hole 32. The bonding layer 303 in the change region 333 includes a first end surface 352 and a second end surface 362. As shown in FIG. 8 , the first end surface 352 and the second end surface 362 are curved, unlike the planar shapes of the first end surface 35 and the second end surface 36 of the fourth embodiment. The end of the first end surface 352 opposite the first end portion 351 and the end of the second end surface 362 opposite the second end portion 361 meet at the filling portion 38. Since the first end face 352 and the second end face 362 are arranged in this manner in the change region 333, the adhesive that constitutes the change region 333 has a shape that opens toward the third hole portion 32, which is the opposite direction from the filling portion 38.

[0088] Furthermore, bonding layer 303 has a change region 343 between filling portion 38 and outer edge portion 39, in which the amount of adhesive that constitutes bonding layer 303 continuously decreases the closer it gets to outer edge portion 39. Like the adhesive that constitutes change region 333, the adhesive that constitutes change region 343 also has a first end surface 352 and a second end surface 362.

[0089] Even when the first end face 352 and the second end face 362 have such shapes, the amount of bonding layer 303 disposed in the transition region 333, 343 gradually decreases continuously from the filling portion 38 toward the third hole portion 32. Because the first end face 352 and the second end face 362 are disposed in this manner in the transition region 333, 343, the adhesive constituting the transition region 333, 343 has a shape that opens toward the third hole portion 32 or the outer edge portion 39, which is the opposite direction from the filling portion 38.

[0090] Because the adhesive constituting the transition regions 333, 343 has such a shape, the holding device 103 can make the temperature distribution in the bonding layer 303 more uniform. Note that in the transition regions 333, 343, the first end face 352 and the second end face 362 do not all need to be formed as curved surfaces, and the first end face 352 and the second end face 362 may be formed to include both curved and flat portions.

[0091] <Details of the Sixth Embodiment of the Present Disclosure> Next, a sixth embodiment of the present disclosure will be described with reference to Fig. 9. In the sixth embodiment, the same components as those in the first to fifth embodiments are designated by the same reference numerals, and redundant descriptions of the structure, operation, and effects will be omitted.

[0092] 9 shows a cross section of a holding device 104 of the sixth embodiment taken along the XZ plane passing through the through-hole 60. The holding device 104 includes a plate-shaped member 10, a base member 20, and a bonding layer 304. The bonding layer 304 is disposed between the second surface S2 of the plate-shaped member 10 and the third surface S3 of the base member 20 to bond them together.

[0093] The bonding layer 304 includes a filling portion 38, a third hole portion 32, an outer edge portion 39, a change region 334, and a change region 344. The bonding layer 304 has a change region 334 between the filling portion 38 and the third hole portion 32, where the amount of adhesive disposed that constitutes the bonding layer 304 continuously decreases toward the third hole portion 32. The change region 334 has a first end surface 35 and a second end surface 36. The bonding layer 304 also has a change region 344 between the filling portion 38 and the outer edge portion 39, where the amount of adhesive disposed that constitutes the bonding layer 304 continuously decreases toward the outer edge portion 39. Like the change region 334, the change region 344 also has a first end surface 35 and a second end surface 36. The adhesive that constitutes the change region 334, 344 has a shape that opens toward the third hole portion 32 or the outer edge portion 39, which is the opposite direction from the filling portion 38.

[0094] In FIG. 9 , a virtual line L11 is assumed to extend in the Z-axis direction through the first end 351 of the first end surface 35, and a virtual line L12 is assumed to extend in the Z-axis direction through the second end 361 of the second end surface 36. The transition regions 334 and 344 correspond to the region between the virtual line L11 or the virtual line L12, whichever is closer to the third hole portion 32 or the outer edge portion 39, and the virtual line L2. In the transition regions 334 and 344, the distance in the Y-direction from the filling portion 38 to the first end 351 corresponds to the distance M1, which is the distance between the virtual line L2 and the virtual line L11. In the transition regions 334 and 344, the distance in the Y-direction from the filling portion 38 to the second end 361 corresponds to the distance M2, which is the distance between the virtual line L2 and the virtual line L12. In the retaining device 104, the distances M1 and M2 are different lengths. In the holding device 104, the first end face 35 and the second end face 36 are arranged in the change regions 334, 344 so that the distance M2 is longer than the distance M1. Note that in the holding device 104, the first end face 35 and the second end face 36 may be arranged in the change regions 334, 344 so that the distance M1 is longer than the distance M2.

[0095] As described above, in the transition regions 334, 344 of the retaining device 104, the distance M1 from the filling portion 38 to the first end 351 and the distance M2 from the filling portion 38 to the second end 361 are different.

[0096] The thermal conductivity of the base member 20 may differ from the thermal conductivity of the plate-shaped member 10. The holding device 104 can adjust the thermal conductivity of the change regions 334, 344 according to the thermal conductivity of the base member 20 and the thermal conductivity of the plate-shaped member 10 by adjusting the positions of the first end 351 and the second end 361. This further reduces the temperature gradient between the filling portion 38 and the change regions 334, 344, and the temperature gradient between the change regions 334, 344 and the third hole portion 32 or the outer edge portion 39.

[0097] <Details of the Seventh Embodiment of the Present Disclosure> Next, a seventh embodiment of the present disclosure will be described with reference to FIG. 10 . FIG. 10 shows an example in which an adhesive 40 different from the adhesive constituting the bonding layer 30 is disposed in a portion of the change region 34 in the first embodiment where the adhesive constituting the bonding layer 30 is not disposed. As shown in FIG. 10 , the adhesive 40 fills the entire space in the change region 34 where the adhesive constituting the bonding layer 30 is not disposed. The adhesive 40 is an organic resin material such as silicone resin, fluororesin, acrylic resin, or epoxy resin. The adhesive 40 is disposed in the space in the change region 34 where the adhesive constituting the bonding layer 30 is not disposed by, for example, injecting it using a syringe.

[0098] In this case, the difference between the thermal conductivity of the change region 34 and the thermal conductivity of the filling portion 38 is smaller than when the adhesive 40 is not disposed in the change region 34. In particular, in the seventh embodiment, the thermal conductivity of the adhesive 40 is lower than the thermal conductivity of the adhesive that constitutes the bonding layer 30. Therefore, the difference between the thermal conductivity of the change region 34 and the thermal conductivity of the outer periphery 39 is also smaller than when the change region 34 is not provided. That is, the temperature gradient between the filling portion 38 and the change region 34 and the temperature gradient between the change region 34 and the outer periphery 39 are both gentler. Therefore, by disposing the adhesive 40 in the change region 34, the temperature distribution in the bonding layer 30 is made more uniform, and ultimately the temperature distribution of the wafer W is made more uniform.

[0099] 10 shows an example in which adhesive 40 is disposed in the space defined by change region 34. Adhesive 40 may also be disposed in the spaces defined by change regions 33, 330, 331, 332, 333, 334, 340, 341, 342, 343, and 344. In this case, similar to the example shown in FIG. 10, the temperature distribution in bonding layers 30, 300, 301, 302, 303, and 304 is made uniform, thereby making the temperature distribution in wafer W uniform.

[0100] As described above, another adhesive 40 having a lower thermal conductivity than the thermal conductivity of the adhesive constituting the bonding layers 30, 300, 301, 302, 303, 304 may be disposed in at least a portion of the change areas 33, 34, 330, 331, 332, 333, 334, 340, 341, 342, 343, 344 where the bonding layers 30, 300, 301, 302, 303, 304 are not disposed.

[0101] With this configuration, the difference between the thermal conductivity of the change regions 33, 34, 330, 331, 332, 333, 334, 340, 341, 342, 343, 344 and the thermal conductivity of the filling portion 38 is smaller than when no other adhesive 40 is disposed in the spaces defined by the change regions 33, 34, 330, 331, 332, 333, 334, 340, 341, 342, 343, 344. The difference between the thermal conductivity of the change regions 33, 34, 330, 331, 332, 333, 334, 340, 341, 342, 343, 344 and the thermal conductivity of the third hole portion 32 or the outer edge portion 39 is also smaller. In this case, the temperature gradient between the filling portion 38 and the change regions 33, 34, 330, 331, 332, 333, 334, 340, 341, 342, 343, 344, and the temperature gradient between the change regions 33, 34, 330, 331, 332, 333, 334, 340, 341, 342, 343, 344 and the third hole portion 32 or the outer edge portion 39, respectively, become even gentler. Therefore, the temperature gradient between the filling portion 38 and the change regions 33, 34, 330, 331, 332, 333, 334, 340, 341, 342, 343, 344, and the temperature gradient between the change regions 33, 34, 330, 331, 332, 333, 334, 340, 341, 342, 343, 344 and the third hole portion 32 or the outer edge portion 39, respectively, are further gentler.

[0102] <Other embodiments> The present disclosure is not limited to the embodiments described above and in the drawings, and for example, the following embodiments are also included within the technical scope of the present disclosure. Furthermore, various modifications other than those described below can be made without departing from the spirit of the present disclosure.

[0103] (1) In the holding devices 1, 100, 101, 102, 103, and 104, the through holes 60 are configured as gas holes for passing a thermally conductive gas. Alternatively, the through holes 60 may be configured as lift pin holes for inserting lift pins (not shown). In this case, as a rod-shaped lift pin moves inside the through holes 60, the tip of the lift pin protruding upward from the first hole portion 52 pushes up the wafer W held by suction on the first surface S1, thereby removing the wafer W from the first surface S1. Even when the through holes 60 are configured as lift pin holes, an insulating tube 71 may be inserted into a part or all of the inside of the through holes 60.

[0104] (2) The through-holes 60 may be holes formed to penetrate the holding device 1 in the vertical direction for purposes other than gas holes and lift pin holes.

[0105] (3) In the holding devices 1, 100, 101, 102, and 103, the imaginary line L1 passing through the boundary between the change region 34, 340, 341, 342, and 343 and the outer edge portion 39 is positioned closer to the filled portion 38 in the Y-axis direction than the outer edge 19 of the plate-shaped member 10. Similarly, in the holding device 104, the imaginary line L11 passing through the boundary between the change region 344 and the outer edge portion 39 is positioned closer to the filled portion 38 in the Y-axis direction than the outer edge 19 of the plate-shaped member 10. The imaginary lines L1 and L11 may be positioned next to the outer edge 19 of the plate-shaped member 10 in the Y-axis direction. In other words, the change region 34, 340, 341, 342, 343, and 344 may be formed to extend from the filled portion 38 to the outer edge 19 of the plate-shaped member 10. Similarly, the change regions 33, 330, 331, 332, 333, and 334 may be formed to extend to the position of the first hole 52 in the plate-like member 10 or to the position of the second hole 22 in the base member 20 in the Y-axis direction.

[0106] (4) In the holding devices 1, 100, 101, 102, 103, and 104, the diameter of the base member 20 is slightly larger than the diameter of the plate-shaped member 10. The diameter of the plate-shaped member 10 and the diameter of the base member 20 may be formed to be approximately the same. In this case, the outer edge portions 39 of the bonding layers 30, 300, 301, 302, 303, and 304 correspond to positions that contact both the outer edge 19 of the plate-shaped member 10 and the outer edge 29 of the base member 20 shown in FIGS. 1 and 2. Furthermore, the diameter of the plate-shaped member 10 may be larger than the diameter of the base member 20. In this case, the outer edge portions 39 of the bonding layers 30, 300, 301, 302, 303, and 304 correspond to positions that contact the outer edge 29 of the base member 20.

[0107] (5) In the holding devices 1, 100, 101, 102, 103, and 104, a protective member such as an O-ring made of silicone rubber, fluorine-based resin, or the like may be disposed on the outer periphery 39 to suppress deterioration of the bonding layer 30 in contact with the outer periphery 39. In this case, replacing the protective member suppresses deterioration of the bonding layer 30 disposed in contact with the outer periphery 39. Therefore, the temperature gradient between the filling portion 38 and the change regions 34, 340, 341, 342, 343, and 344, and the temperature gradient between the change regions 34, 340, 341, 342, 343, and 344 and the outer periphery 39 can be maintained gentle.

[0108] (6) In the second to sixth embodiments, the change regions 330, 331, 332, 333, and 334 are disposed near the through-hole 60. On the other hand, although not shown, the change regions 330, 331, 332, 333, and 334 may be disposed near the terminal hole 70.

[0109] (7) In the seventh embodiment, the form of the adhesive 40 disposed in the change area 34 is not limited to the example shown in Fig. 10. For example, as shown in Fig. 11, part of the adhesive 40 disposed in the change area 34 may be disposed beyond the change area 34 and on the outer edge 39.

[0110] (8) The adhesive 40 may be disposed in a portion of the change region 34 where the bonding layer 30 is not disposed. In this case, as shown in Fig. 12, the adhesive 40 may be filled in a portion of the space where the adhesive constituting the change region 34 is not disposed that is close to the filling portion 38, but not in a portion close to the outer edge portion 39. Furthermore, although not shown, the adhesive 40 may be filled in a portion of the space where the adhesive constituting the change region 34 is not disposed that is close to the filling portion 38, but only in a portion close to the outer edge portion 39.

[0111] (9) The adhesive 40 disposed in the transition region 34 does not necessarily have to fill the space between the first end face 35 and the second surface S2. For example, as shown in Fig. 13, in the transition region 34, the adhesive 40 may be disposed so as to contact a portion of the first end face 35, leaving a space between the disposed adhesive 40 and the second surface S2. In other words, the adhesive 40 may be disposed in at least a portion of the space that constitutes the transition region 34 and where no adhesive is disposed.

[0112] (10) Although not shown, even when adhesive 40 is placed in the space defined by transition region 34, a replaceable protective member such as the O-ring described above may be placed on outer edge portion 39. [Explanation of symbols]

[0113] 1,100,101,102,103,104: Holding device 10: Plate-shaped member 19: Outer edge 20: Base member 22, 23: Second hole portion 30,300,301,302,303,304: Bonding layer 32: Third hole 33, 34, 330, 331, 332, 333, 334, 340, 341, 342, 343, 344: Change area 35: First end surface 36: Second end surface 38: Filling portion 39: Outer edge portion 40: Adhesive 52,53: First hole 351: First end 361: Second end M1,M2: Distance S1: First surface S2: Second surface S3: Third surface S4: Fourth surface W: wafer

Claims

1. a plate-like member having a first surface and a second surface located opposite to the first surface, the plate-like member including a first hole portion recessed from at least the second surface; a base member having a third surface disposed opposite to the second surface and a fourth surface positioned opposite the third surface, the base member including a second hole portion formed to penetrate the third surface and the fourth surface; a bonding layer formed between the second surface and the third surface to bond the second surface and the third surface, The bonding layer is a filling portion between the second surface and the third surface, the filling portion being filled with an adhesive that constitutes the bonding layer; a third hole portion that communicates the first hole portion and the second hole portion at a location that contacts the first hole portion and the second hole portion; an outer edge portion in contact with the outer edge of the plate-like member or the outer edge of the base member; a first change region between the filling portion and the third hole portion, in which the amount of the adhesive disposed therein continuously decreases as the amount approaches the third hole portion; a second change region between the filling portion and the outer edge portion, in which the amount of the adhesive disposed therein continuously decreases as the amount approaches the outer edge portion; Equipped with In a first form, an end face of the adhesive constituting the first change region has at least one of a first end face that faces the second surface and is inclined with respect to the third surface and extends from the third surface toward the second surface, or a second end face that faces the third surface and is inclined with respect to the second surface and extends from the second surface toward the third surface, When the first change region has both the first end surface and the second end surface, a first end where the first end surface and the third surface contact and a second end where the second end surface and the second surface contact are located on the opposite side of the first change region from the filling portion, and the first end surface and the second end surface contact each other at the filling portion, so that the adhesive has a shape that opens in the direction opposite to the filling portion, A holding device having one of the first configuration and the second configuration.

2. 2. The holding device of claim 1, wherein the end face of the adhesive constituting the second change area has at least one of a first end face facing the second surface, inclined relative to the third surface and extending from the third surface toward the second surface, or a second end face facing the third surface, inclined relative to the second surface and extending from the second surface toward the third surface.

3. the second change region has both the first end surface and the second end surface, A holding device as described in claim 2, wherein a first end where the first end face and the third surface contact and a second end where the second end face and the second surface contact are located on the opposite side of the filling portion in the second change region, and the first end face and the second end face contact in the filling portion, so that the adhesive has a shape that opens in the direction opposite to the filling portion.

4. The holding device according to claim 1 or 3, wherein a distance from the filling portion to the first end is different from a distance from the filling portion to the second end.

5. The holding device of claim 1, wherein another adhesive having a thermal conductivity lower than that of the adhesive is disposed in at least a portion of the first change area and the second change area where the bonding layer is not disposed.

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