Vapor deposition apparatus and vapor deposition method using the same

Abstract

To provide a vapor deposition apparatus capable of securing direct infiltration property of a vapor deposition material into a substrate, and a vapor deposition method using the apparatus.SOLUTION: A vapor deposition apparatus 1 comprises: an evaporation source 10 which evaporates a vapor deposition material D; a substrate holding body 20 which is arranged so as to oppose to the evaporation source 10, and holds a substrate; and a vacuum container 30 which houses the evaporation source 10 and the substrate holding body 20. The vacuum container 30 has: an evaporation source housing part 31 which has an opening part 31C open toward the substrate holding body 20, and houses the evaporation source 10; and a substrate holding body housing part 32 which has an opening part 32C open toward the evaporation source 10, and houses the substrate holding body 20. The evaporation source housing part 31 and the substrate holding body housing part 32 are constituted to be connectable via a cylindrical connection member 40.SELECTED DRAWING: Figure 2

Description

[Technical Field]

[0001] The present invention relates to a vapor deposition apparatus and a vapor deposition method using the same, and more particularly to a vapor deposition apparatus including an evaporation source that evaporates an evaporation material, a substrate holder that holds a substrate, and a vacuum vessel that houses the evaporation source and the substrate holder, and a vapor deposition method using the same. [Background technology]

[0002] BACKGROUND ART Various types of vapor deposition apparatuses for depositing a vapor deposition material onto the surface of a base material such as a substrate have been proposed. For example, Patent Document 1 discloses such a vapor deposition apparatus.

[0003] The deposition apparatus described in Patent Document 1 comprises an evaporation source (film forming source) placed at the bottom inside a vacuum vessel (vacuum chamber), a rotary substrate holder placed at the top inside the vacuum vessel, and a pressure control means for controlling the pressure inside the vacuum vessel.The pressure control means is operated to adjust the internal pressure of the vacuum vessel so that it falls within a pressure range determined based on the size of the vacuum vessel, and then a thin film is formed on the substrate.

[0004] Such a vapor deposition apparatus makes it possible to form a thin film filled with film-forming molecules on the surface of a substrate, and is therefore expected to produce (manufacture) a substrate with excellent abrasion resistance and the like. [Prior art documents] [Patent documents]

[0005] [Patent Document 1] International Publication No. 2013 / 105243 Summary of the Invention [Problem to be solved by the invention]

[0006] In this type of vapor deposition apparatus, in order to improve the adhesion of the vapor deposition material to the substrate, it is effective to attach the vapor deposition material as perpendicularly as possible to the surface of the substrate, that is, to increase the perpendicular incident component of the vapor deposition material to the substrate.

[0007] However, in the deposition apparatus described in Patent Document 1, although the pressure inside the vacuum chamber is controlled to an optimum value based on the distance between the surface of the substrate and the film-forming source (evaporation source), etc., no consideration is given to the perpendicular incidence of the deposition material onto the substrate (hereinafter simply referred to as "direct incidence"), and therefore, depending on the shape, size, etc. of the substrate holder, there is a high possibility that the adhesion of the deposition material will be reduced, which will result in a problem of reduced quality of the thin film.

[0008] Furthermore, when the substrate holder has a structure capable of holding multiple substrates, such as the substrate holder of Patent Document 1, the incidence angle of the vapor deposition material is likely to differ for each substrate, and for example, it is often difficult to ensure direct incidence of the vapor deposition material for substrates held on the peripheral edge of the substrate holder compared to substrates held on the central side. In such cases, the adhesion of the vapor deposition material varies between substrates, leading to the problem that high-quality thin films cannot be formed simultaneously and stably.

[0009] Considering these points, it is difficult to say that the vapor deposition apparatus of Patent Document 1 is sufficient in terms of stably producing high-quality substrates, and there is still room for improvement.

[0010] The present invention has been made to solve such problems, and aims to provide a vapor deposition apparatus that can ensure direct entry of a vapor deposition material into a substrate, and a vapor deposition method using the same.

[0011] The above-described problems are solved by a vapor deposition device according to the present invention, which is a vapor deposition device for forming a thin film on a substrate, comprising: an evaporation source that evaporates an evaporation material; a substrate holder that is arranged opposite the evaporation source and holds the substrate; and a vacuum vessel that accommodates the evaporation source and the substrate holder, wherein the vacuum vessel comprises an evaporation source accommodation section that has an evaporation source-side open end that opens toward the substrate holder and that accommodates the evaporation source, and a substrate holder accommodation section that has a substrate holder-side open end that opens toward the evaporation source and that accommodates the substrate holder, and wherein the evaporation source accommodation section and the substrate holder accommodation section are configured to be connectable via a cylindrical connecting member.

[0012] In the vapor deposition apparatus of the present invention, it is preferable that the evaporation source is disposed so that a central position of the evaporation source as viewed in the vapor deposition direction of the thin film coincides with a central position of the substrate holder.

[0013] Furthermore, in the vapor deposition device of the present invention, it is preferable that the vapor deposition device has a plurality of connecting members, each of which has a different cylindrical height.

[0014] The above-described problem can also be solved by a vapor deposition method using a vapor deposition apparatus for forming a thin film on a substrate, the vapor deposition apparatus comprising: an evaporation source that evaporates a vapor deposition material; a substrate holder that is arranged opposite the evaporation source and holds the substrate; and a vacuum vessel that accommodates the evaporation source and the substrate holder, the vacuum vessel comprising: an evaporation source accommodation section that has an evaporation source-side open end that opens toward the substrate holder and accommodates the evaporation source; and a substrate holder accommodation section that has a substrate holder-side open end that opens toward the evaporation source and accommodates the substrate holder, the evaporation source accommodation section and the substrate holder accommodation section being configured to be connectable via a cylindrical connecting member, and the vapor deposition method comprising: a separation distance adjustment step of adjusting a separation distance between the evaporation source and the substrate holder by connecting the evaporation source accommodation section and the substrate holder accommodation section directly or via the cylindrical connecting member; and a vapor deposition step of vapor-depositing the vapor deposition material onto the substrate after the separation distance adjustment step has been performed. [Effects of the Invention]

[0015] As described above, the vapor deposition apparatus and the vapor deposition method using the same according to the present invention have a relatively simple configuration, but are capable of ensuring direct application of the vapor deposition material to the substrate, and therefore, can stably produce high-quality substrates. [Brief explanation of the drawings]

[0016] [Figure 1] FIG. 1 is a schematic diagram showing one embodiment of a vapor deposition apparatus according to the present invention. [Figure 2] FIG. 2 is a schematic view showing a state in which a cylindrical connecting member is attached to the vapor deposition apparatus of FIG. [Figure 3] FIG. 3 is a schematic diagram showing the deposition of a deposition material onto a substrate, where (a) is a diagram showing deposition using the deposition apparatus of FIG. 1, and (b) is a diagram showing deposition using the deposition apparatus of FIG. 2. [Figure 4] FIG. 4 is a flowchart illustrating the vapor deposition method according to the present invention. DETAILED DESCRIPTION OF THE INVENTION

[0017] A preferred embodiment of a vapor deposition apparatus and a vapor deposition method using the same according to the present invention will now be described with reference to the drawings. Fig. 1 is a schematic diagram showing one embodiment of the vapor deposition apparatus according to the present invention, and Fig. 2 is a schematic diagram showing a state in which a cylindrical connecting member is attached to the vapor deposition apparatus of Fig. 1.

[0018] <Overall configuration of vapor deposition device 1> As shown in Figures 1 and 2, the vapor deposition apparatus 1 according to this embodiment is an apparatus for forming a thin film on the surface of a substrate (see Figure 3, hereinafter referred to as "substrate SB"), and is configured to include an evaporation source 10, a substrate holder 20, and a vacuum container 30. The vapor deposition apparatus 1, the substrate SB, the evaporation source 10, the substrate holder 20, and the vacuum vessel 30 correspond to the "vapor deposition apparatus," "substrate," "evaporation source," "substrate holder," and "vacuum vessel" described in the claims, respectively.

[0019] (evaporation source 10) The evaporation source 10 is a device for evaporating the evaporation material D, and includes a crucible 10a having a recess for placing the evaporation material D therein, and other devices. Examples of the other devices include an electron gun (not shown) capable of irradiating an electron beam, and a shutter (not shown) for closing and opening the top (recess) of the crucible 10a. In the following, for ease of understanding the technology of the present disclosure, the evaporation source 10 will be described on the assumption that it is an electron beam type provided with an electron gun. The vapor deposition material D corresponds to the "vapor deposition material" described in the claims.

[0020] The evaporation of the evaporation material D is carried out by irradiating the evaporation material D filled in the crucible 10a with an electron beam to heat it, as in a known evaporation device. The vapor (see FIG. 3, hereinafter referred to as "vapor V") evaporated by such heating is ejected into the vacuum container 30 and deposited on the surface of the substrate SB held by the substrate holder 20 (see FIG. 3). As a result, a thin film with a predetermined thickness is formed on the surface of the substrate SB.

[0021] Examples of the deposition material D include inorganic substances such as silica (SiO2), titanium oxide (TiO2), and tantalum pentoxide (Ta2O5), and organic substances such as fluorine compounds. The form of the deposition material D is not particularly limited, and for example, a pellet-like material can be used.

[0022] Here, the substrate SB according to this embodiment will be described. The substrate SB is, for example, an electrical or electronic device component such as a glass substrate that forms the display surface of a liquid crystal display (Liquid Crystal Display) or an organic electroluminescence display (Organic ElectroLuminescence Display), or other industrial component (for example, optical component or mechanical component), and is formed in the shape of a circular plate (for example, diameter: 2 inches, 4 inches, or 8 inches).

[0023] Examples of materials that can be used for such a substrate SB include silicon (Si), silica (SiO2), lithium tantalate (LiTaO3), and lithium niobate (LiNbO3). Note that, although the following description will be given taking a disk-shaped substrate SB as an example of the base material, other materials, such as machine tools, may also be used, and the shape thereof may also be other than a circular plate shape.

[0024] (Substrate holder 20) The substrate holder 20 according to this embodiment is made of a metal member such as stainless steel, and is configured to be able to hold a plurality of substrates SB. Specifically, the substrate holder 20 has a plurality of substrate holding openings 20a for holding the substrates SB, and is formed in a hollow dome shape (concave surface). The plurality of substrate holding openings 20a are formed along the circumferential direction at predetermined intervals in the radial direction. The number and positions of the substrate holding openings 20a formed in the substrate holder 20 can be changed as appropriate depending on the size of the substrates SB and the substrate holder 20, etc.

[0025] The substrate-holding opening 20a has a shape corresponding to the substrate SB (in this embodiment, a "circular plate shape") and is formed to be slightly smaller than the substrate SB. In addition, a support portion (not shown) for supporting the substrate SB is formed on the opening periphery of the substrate-holding opening 20a. Such a support portion can be realized, for example, by forming a step (notch) on the opening periphery of the substrate-holding opening 20a that can fit with the periphery of the substrate SB.

[0026] A rotary shaft 21 is formed to protrude from the outer surface of the upper part of the substrate holder 20 at its central position. The rotary shaft 21 is rotatably inserted in an airtight state into a hole formed in the substrate holder housing portion 32 (ceiling wall portion 32A), and a driving means such as a motor (not shown) is connected to its tip. The substrate holder housing portion 32 will be described later. The driving means is configured so that the rotation speed and rotation direction of the rotary shaft 21 are controlled by a controller (control means) not shown.

[0027] In this embodiment, since the substrate holder 20 is configured as described above, (1) The back side of the substrate SB is supported in the substrate holding opening 20a, thereby attaching the plurality of substrates SB to the inner surface side of the substrate holder 20; (2) When the evaporated deposition material D (see "vapor V" in FIG. 3) is deposited, the driving means is driven to rotate the substrate holder 20. By performing the above operations, the deposition material D can be attached to the surface of the substrate SB (hereinafter also referred to as "film formation"), which makes it possible to simultaneously and efficiently form films on a plurality of substrates SB.

[0028] In this embodiment, a rotary substrate holder 20 capable of holding multiple substrates SB is shown, but the present invention is not limited to this and may be any other substrate holder, for example, a substrate holder capable of holding only one substrate, or a substrate holder that moves a long substrate in one direction and holds it so that film formation can be performed continuously.

[0029] (vacuum container 30) The vacuum vessel 30 is made of a metal member such as stainless steel, and is an airtight vessel (vacuum chamber) capable of housing the evaporation source 10 and the substrate holder 20 therein. The vacuum vessel 30 according to this embodiment is configured to include an evaporation source housing portion 31 and a substrate holder housing portion 32 disposed above the evaporation source housing portion 31 . As will be described in more detail later, in this embodiment, the evaporation source accommodation section 31 and the substrate holder accommodation section 32 are directly connected (see Figure 1) or connected with a cylindrical connecting member 40 interposed therebetween (see Figure 2), thereby forming a space (accommodation space) capable of accommodating the evaporation source 10 and the substrate holder 20. The evaporation source accommodating section 31, the substrate holder accommodating section 32, and the cylindrical connecting member 40 correspond to the "evaporation source accommodating section," the "substrate holder accommodating section," and the "cylindrical connecting member" described in the claims, respectively.

[0030] (evaporation source housing 31) The evaporation source accommodation section 31 is a member for accommodating the evaporation source 10, and is configured to include a bottom wall section 31A, a peripheral wall section 31B erected from the outer peripheral edge of the bottom wall section 31A, an opening section 31C opening at the upper end side of the peripheral wall section 31B, and a flange section 31D provided to protrude from the outer peripheral surface of the upper end of the peripheral wall section 31B. The evaporation source 10 is accommodated in a region (internal space) defined by the bottom wall section 31A and the peripheral wall section 31B, and in this state is arranged on the center line C of the evaporation source accommodation section 31. The upper end of the peripheral wall portion 31B corresponds to the "evaporation source side open end" described in the claims.

[0031] A hole is formed at the lower end of the peripheral wall 31B to which one end of an exhaust pipe 50 is connected. A vacuum pump (not shown) is connected to the other end of the exhaust pipe 50, and by driving the vacuum pump while the internal space of the vacuum vessel 30 is sealed, the internal space can be converted from atmospheric pressure to a vacuum state. The sealing of the internal space of the vacuum vessel 30 will be described later.

[0032] (Substrate holder accommodation section 32) The substrate holder accommodating portion 32 is a member for accommodating the substrate holder 20, and is composed of a ceiling wall portion 32A, a peripheral wall portion 32B hanging down from the outer peripheral end of the ceiling wall portion 32A, an opening 32C opening at the lower end side of the peripheral wall portion 32B, and a flange portion 32D provided to protrude from the outer peripheral surface of the lower end of the peripheral wall portion 32B. The lower end of the peripheral wall portion 32B corresponds to the "evaporation source side open end" described in the claims.

[0033] The substrate holder accommodation portion 32 has approximately the same inner diameter as the evaporation source accommodation portion 31, and a hole through which the rotation shaft 21 of the substrate holder 20 can be inserted is formed at the center position of the top wall portion 32A (on the center line C of the substrate holder accommodation portion 32). The substrate holder 20 is accommodated in the region (internal space) defined by the top wall portion 32A and the peripheral wall portion 32B, with the rotation shaft 21 inserted in the hole formed in the top wall portion 32.

[0034] The flange portion 32D is formed in substantially the same shape as the flange portion 31D of the evaporation source housing portion 31. In this embodiment, after aligning the flange portion 31D and the flange portion 32D, the evaporation source accommodation portion 31 and the substrate holder accommodation portion 32 can be airtightly connected (sealed) by tightening bolts, etc. In this state, the internal space of the vacuum vessel 30 can be evacuated by driving the vacuum pump.

[0035] In this way, in this embodiment, the internal space (evaporation source storage section 31) that accommodates the evaporation source 10 and the internal space (substrate holder storage section 32) that accommodates the substrate holder 20 are configured to be separable, and therefore when connecting these, they can of course be directly connected (see Figure 1), but it is also possible to connect them using a cylindrical connecting member 40 as shown in Figure 2. Such a cylindrical connecting member 40 will be described below with reference to FIG.

[0036] (Cylindrical connecting member 40) The tubular connecting member 40 is made of a metal material such as stainless steel, and has a hollow tubular main body 40A, openings 40B, 40B at both ends, and a pair of flanges 40C, 40C that extend from the periphery of the openings 40B, 40B, respectively.

[0037] The main body 40A has a predetermined cylindrical height H, and its inner diameter is formed to be approximately the same as the inner diameters of the evaporation source accommodating portion 31 and the substrate holder accommodating portion 32. The inner diameter of the opening 40B is also formed to be approximately the same as the inner diameters of the opening 31C of the evaporation source accommodating portion 31 and the opening 32C of the substrate holder accommodating portion 32.

[0038] The flange portion 40C has approximately the same shape as the flange portion 31D of the evaporation source accommodating portion 31 and the flange portion 32D of the substrate holder accommodating portion 32, and by fastening them together with bolts or the like, it is possible to airtightly connect the evaporation source accommodating portion 31 and the substrate holder accommodating portion 32 with the tubular connecting member 40 interposed therebetween.

[0039] Here, the cylinder height H of the main body 40A will be described with reference to FIGS. 3(a) is a schematic diagram showing a state in which the evaporation source accommodation section 31 and the substrate holder accommodation section 32 are directly connected, and FIG. 3(b) is a schematic diagram showing a state in which the evaporation source accommodation section 31 and the substrate holder accommodation section 32 are connected with a cylindrical connecting member 40 interposed therebetween. Note that in FIGS. 3(a) and 3(b), the size of the substrate holder 20 relative to the vacuum vessel 30 (internal space) is exaggerated to facilitate understanding of the technology in the present disclosure.

[0040] As described above, in this embodiment, when the evaporation material D in the evaporation source 10 is heated while a plurality of substrates SB are held by the substrate holder 20, the vapor V is ejected toward the substrates SB. 3(a), when the evaporation source accommodation part 31 and the substrate holder accommodation part 32 are directly connected, the distance between the substrate SB and the evaporation source 10 (hereinafter referred to as "SS distance L") is shorter than that in FIG. 3(b), and the incident angle of the vapor V with respect to the surface of the substrate SB is likely to be a value deviated from 90° (vertical). In this regard, it can be said that the SS distance L and the incident angle of the vapor V are closely related. In the following, for the sake of convenience, the "incident angle of vapor V: 90°" with respect to the substrate SB is used as a reference, and the error (deviation) therefrom is referred to as "±angle θ" (see FIGS. 3(a) and (b)).

[0041] As shown in FIG. 3(a), the "±angle θ2" of the substrate SB held on the peripheral side of the substrate holder 20 (particularly, the end of the substrate SB on the peripheral side of the substrate holder 20) tends to be larger than the "±angle θ1" of the substrate SB held on the central side thereof ("±angle θ2" > "±angle θ1").

[0042] Generally, when the perpendicular incident component of vapor V to substrate SB decreases (when the value of "±angle θ" increases), the adhesion of deposition material D to substrate SB decreases, which can lead to problems such as the formation of a thin film on substrate SB that is low in density and easily peels off. 3(a), the value of "±angle θ" is small (see "±angle θ1") on the substrate SB held on the central side of the substrate holder 20, so a high-quality thin film can be formed, but the value of "±angle θ" is relatively large (see "±angle θ2") on the substrate SB held on the peripheral side, so there is a risk that a low-quality thin film will be formed. In particular, there is a concern that, on the substrate SB held on the peripheral side of the substrate holder 20, a thin film of lower quality will be more likely to be formed toward the edge on the peripheral side. In such a case, there occurs a problem in that the quality varies among the plurality of substrates SB held by the substrate holder 20.

[0043] Therefore, in this embodiment, if it is anticipated that such a problem may occur, a cylindrical connecting member 40 is interposed in advance between the evaporation source accommodation section 31 and the substrate holder accommodation section 32 to lengthen the SS distance L between the substrate SB and the evaporation source 10, and to bring the value of the "±angle θ" as close to "0" as possible (see Figure 3(b)). Taking the examples of FIGS. 3(a) and 3(b), by inserting the tubular connecting member 40, · “±Angle θ1>±Angle θ1′” · “±Angle θ2>±Angle θ2′” In this way, it is possible to reduce the "±angle θ" of the vapor V with respect to all substrates SB (approaching "0"). This makes it possible to improve the adhesion of the deposition material D to the substrates SB, and therefore to simultaneously and stably produce high-quality substrates SB.

[0044] The cylindrical height H of the cylindrical connecting member 40 can be set so that the "±angle θ" is equal to or less than a predetermined value depending on the shape (e.g., the curvature of the inner surface of the substrate holder 20) and size, etc. of the substrate holder 20. Taking Figure 3(b) as an example, the substrate SB with the longest SS distance L from the evaporation source 10 (in the example of Figure 3(b), the substrate SB held on the peripheral side of the substrate holder 20) is used as a reference, and the cylindrical height H of the cylindrical connecting member 40 can be set so that the "±angle θ" is, for example, "±5°" or less.

[0045] It is also possible to prepare in advance a plurality of cylindrical connecting members 40 with different cylindrical heights H. In this way, if the above-mentioned problem occurs, a cylindrical connecting member 40 with an appropriate cylindrical height H can be quickly attached (replaced) between the evaporation source accommodation part 31 and the substrate holder accommodation part 32, thereby enabling the SS distance L and the "±angle θ" between the substrate SB and the evaporation source 10 to be immediately adjusted.

[0046] <Vapor deposition method using vapor deposition device 1> Next, a vapor deposition method using the above-described vapor deposition apparatus 1 will be described with reference to Figures 1 to 4. Note that the following description will be given on the assumption that a plurality of substrates SB are held on the substrate holder 20 and that the evaporation source 10 is filled with an evaporation material D.

[0047] As shown in FIG. 4, the vapor deposition method according to this embodiment includes a separation distance checking step S100, a separation distance adjusting step S200, and a vapor deposition step S300. The vapor deposition method, the separation distance adjusting step S200, and the vapor deposition step S300 correspond to the "vapor deposition method," the "separation distance adjusting step," and the "vapor deposition step" recited in the claims, respectively.

[0048] (Separation distance confirmation process S100) As shown in FIG. 4, the vapor deposition method according to this embodiment starts with a separation distance confirmation step S100. Specifically, in the separation distance confirmation step S100, it is confirmed whether or not the SS distance L between the substrate SB and the evaporation source 10 has been adjusted (see FIGS. 1 to 3). The adjustment of the SS distance L between the substrate SB and the evaporation source 10 is performed in a separation distance adjusting step S200, which will be described later.

[0049] In the vapor deposition method according to this embodiment, if the SS distance L between the substrate SB and the evaporation source 10 has been adjusted in the separation distance confirmation step S100, the vapor deposition step S300 is performed, and if the SS distance L has not been adjusted, the separation distance adjustment step S200 is performed.

[0050] (Separation distance adjustment process S200) In the inter-substrate distance adjusting step S200, the operation of adjusting the SS distance L between the substrate SB and the evaporation source 10 is carried out as described above. Specifically, in the separation distance adjustment work S200, for example, (1) As described above, for the substrate SB where the SS distance L between the substrate SB and the evaporation source 10 is the longest, it is confirmed whether the "±angle θ" is within a predetermined angle range (for example, "±5°") (see FIG. 3). (2) In the above (1), if the "±angle θ" is not within the above-mentioned predetermined angle range, calculate the cylindrical height H of the cylindrical connecting member 40 necessary to be within the predetermined angle range. (3) The cylindrical connecting member 40 having the cylindrical height H obtained in (2) above is attached between the evaporation source accommodation portion 31 and the substrate holder accommodation portion 32. In the above-mentioned operation (1), if the "±angle θ" is within a predetermined angle range, it goes without saying that the above-mentioned operations (2) and (3) do not need to be performed.

[0051] In the vapor deposition method according to this embodiment, the vapor deposition step S300 is performed after the separation distance adjusting step S200.

[0052] (Vapor deposition process S300) In the deposition step S300, similar to a known deposition process, (1) Using a vacuum pump, the back pressure in the internal space of the vacuum vessel 30 is reduced to, for example, 10 -2 ~10 -5 Pa, (2) While rotating the substrate holder 20, the evaporation material D is heated to eject vapor V, thereby forming a thin film on the surface of the substrate SB. Work in the following steps.

[0053] The vapor deposition method according to this embodiment is configured to complete the work after the vapor deposition step S300 is performed.

[0054] As described above, according to this embodiment, the SS distance L between the substrate SB and the evaporation source 10 can be easily adjusted by attaching a cylindrical connecting member 40 of the desired cylindrical height H between the evaporation source accommodating section 31 and the substrate holder accommodating section 32, thereby easily adjusting the "±angle θ" of the vapor V relative to the substrate SB. That is, in this embodiment, it is possible to increase the perpendicular incident component of the vapor V (evaporation material D) onto the substrate SB, thereby reliably improving the adhesion of the evaporation material D. As a result, the evaporation apparatus 1 according to this embodiment and the evaporation method using the same can stably produce high-quality substrates SB.

[0055] Furthermore, in this embodiment, the evaporation source 10 and the substrate holder 20 are arranged concentrically (see "center line C" in FIGS. 1 and 2), so it is possible to simply and more reliably increase the perpendicular incident component of the vapor V (evaporation material D) onto the multiple substrates SB. As a result, in this embodiment, high-quality substrates SB can be more stably produced.

[0056] In this embodiment, an electron beam type evaporation source 10 provided with an electron gun is used, but in addition to this, a known ion beam source can also be provided.

[0057] Furthermore, in this embodiment, the present invention is exemplified as being applied to a vapor deposition apparatus 1 that forms a film using the so-called vacuum vapor deposition method, but it can also be applied to vapor deposition apparatuses that form films using other methods, such as a sputtering method or a CVD (chemical vapor deposition) method.

[0058] Furthermore, in this embodiment, the cylindrical connecting member 40 is formed using a material (metal plate) that makes it impossible or difficult to change the cylinder height H (see FIGS. 1 and 2), but the present invention is not limited to this, and the cylindrical connecting member 40 may be formed using a material (for example, a bellows) that makes it possible to change the cylinder height H. In this case, it is also possible to configure the cylindrical height H to be electrically changed using a driving means such as a motor. By configuring it in this manner, the SS distance L between the substrate SB and the evaporation source 10 can be flexibly changed without attaching or detaching the cylindrical connecting member 40 from the vacuum container 30, making it possible to provide a great deal of convenience.

[0059] Although the present invention has been described above as an embodiment, the present invention is not limited to the descriptions and drawings that form part of the disclosure of the present invention according to the embodiment. In other words, it should be added that all other embodiments, examples, and operational techniques that are made by those skilled in the art based on the embodiment are naturally included in the scope of the present invention. [Explanation of symbols]

[0060] 1 Vapor deposition equipment 10 Evaporation Source 10a Crucible 20 Substrate holder (substrate holder) 20a Board holding opening 21 Rotation axis 30 Vacuum container 31 Evaporation source housing 31A Bottom wall part 31B Peripheral wall part 31C opening 31D flange 32 Substrate holder accommodation section (substrate holder accommodation section) 32A Ceiling wall section 32B Peripheral wall part 32C opening 32D flange 40 Cylindrical connecting member 40A main body 40B opening 40C flange 50 exhaust pipe SB substrate (base material) D. Vapor deposition material V Steam C center line H Cylinder height L SS distance θ1, θ1´, θ2, θ2´ ± angle

Claims

1. A vapor deposition apparatus for forming a thin film on a substrate, an evaporation source that evaporates an evaporation material; a substrate holder that is disposed so as to face the evaporation source and that holds the substrate; a vacuum vessel that accommodates the evaporation source and the substrate holder; Equipped with The vacuum vessel comprises: an evaporation source housing portion having an evaporation source side open end that opens toward the substrate holder and that houses the evaporation source; a substrate holder accommodating section that has a substrate holder-side open end that opens toward the evaporation source and accommodates the substrate holder; Equipped with the evaporation source accommodation unit and the substrate holder accommodation unit are configured to be connectable via a cylindrical connecting member, In the vapor deposition device, the cylindrical connecting member has a hollow cylindrical main body, openings at both ends, and a pair of flanges provided so as to protrude from the periphery of the openings.

2. The vapor deposition device according to claim 1 , wherein the evaporation source is disposed so that a central position of the evaporation source as viewed in the vapor deposition direction of the thin film coincides with a central position of the substrate holder.

3. The vapor deposition device according to claim 1 , wherein the cylindrical connecting member is a plurality of cylindrical connecting members, each cylindrical connecting member having a different height.

4. A vapor deposition method using a vapor deposition apparatus for forming a thin film on a substrate, The vapor deposition apparatus is an evaporation source that evaporates an evaporation material; a substrate holder that is disposed so as to face the evaporation source and that holds the substrate; a vacuum vessel that accommodates the evaporation source and the substrate holder; Equipped with The vacuum vessel comprises: an evaporation source housing portion having an evaporation source side open end that opens toward the substrate holder and that houses the evaporation source; a substrate holder accommodating section that has a substrate holder-side open end that opens toward the evaporation source and accommodates the substrate holder; Equipped with the evaporation source accommodation unit and the substrate holder accommodation unit are configured to be connectable via a cylindrical connecting member, The cylindrical connecting member has a hollow cylindrical main body, openings at both ends thereof, and a pair of flanges provided so as to protrude from the periphery of the opening, The vapor deposition method includes: a separation distance adjusting step of adjusting a separation distance between the evaporation source and the substrate holder by directly connecting the evaporation source accommodation unit and the substrate holder accommodation unit or by connecting them via the cylindrical connecting member; a vapor deposition step of depositing the vapor deposition material on the substrate after the separation distance adjusting step; A deposition method comprising:

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