Solid-state imaging device and electronic device

Abstract

A solid-state imaging device (1) according to the present disclosure includes a semiconductor layer (20), a plurality of on-chip lenses (50), a first separation region (22), and a second separation region (23). The semiconductor layer (20) is provided with a plurality of photoelectric conversion units. The plurality of on-chip lenses (50) allow light (L) to be incident on the corresponding photoelectric conversion units. The first separation region (22) separates the plurality of photoelectric conversion units to which light (L) is incident via the same on-chip lens (50). The second separation region (23) separates the plurality of photoelectric conversion units to which light is incident via different on-chip lenses (50). Furthermore, the first separation region (22) has a higher refractive index than the second separation region (23).

Description

[Technical Field]

[0001] The present disclosure relates to a solid-state imaging device and an electronic device. [Background technology]

[0002] In recent years, there has been a technology in which a back-illuminated CMOS (Complementary Metal Oxide Semiconductor) image sensor detects a phase difference by irradiating light onto multiple photodiodes from the same on-chip lens (see, for example, Patent Document 1). [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2016-52041 Summary of the Invention [Problem to be solved by the invention]

[0004] However, in the above-described conventional technology, when light is incident on multiple photodiodes from the same on-chip lens, the incident light may be significantly scattered in the separation regions provided between the multiple photodiodes. If this significantly scattered light is incident on another photodiode, there is a risk of color mixing occurring within the pixel array.

[0005] Therefore, the present disclosure proposes a solid-state imaging device and an electronic device that can suppress the occurrence of color mixing. [Means for solving the problem]

[0006] According to the present disclosure, there is provided a solid-state imaging device. The solid-state imaging device includes a semiconductor layer, a plurality of on-chip lenses, a first isolation region, and a second isolation region. The semiconductor layer is provided with a plurality of photoelectric conversion units. The plurality of on-chip lenses cause light to be incident on the corresponding photoelectric conversion units. The first isolation region separates the plurality of photoelectric conversion units to which light is incident via the same on-chip lens. The second isolation region separates the plurality of photoelectric conversion units to which light is incident via different on-chip lenses. The first isolation region has a higher refractive index than the second isolation region. [Effects of the Invention]

[0007] According to the present disclosure, it is possible to provide a solid-state imaging device and an electronic device that can suppress the occurrence of color mixing. Note that the effects described herein are not necessarily limited to those described herein, and any of the effects described in the present disclosure may be achieved. [Brief explanation of the drawings]

[0008] [Figure 1] 1 is a system configuration diagram illustrating a schematic configuration example of a solid-state imaging device according to an embodiment of the present disclosure. [Figure 2] FIG. 2 is a plan view for explaining the arrangement of unit pixels, color filters, and on-chip lenses in a pixel array section according to an embodiment of the present disclosure. [Figure 3] FIG. 3 is a cross-sectional view taken along the line AA in FIG. 2. [Figure 4] 10A and 10B are diagrams for explaining the scattering state of light within a pixel array section in a reference example. [Figure 5] 10A and 10B are diagrams for explaining a scattering state of light within a pixel array unit according to an embodiment of the present disclosure. [Figure 6] FIG. 2 is a circuit diagram showing a circuit configuration of a unit pixel according to an embodiment of the present disclosure. [Figure 7] FIG. 10 is a diagram for explaining the structure of a second isolation region of a pixel array section according to a first modified example of the embodiment of the present disclosure. [Figure 8]FIG. 10 is a diagram for explaining the structure of a first isolation region of a pixel array section according to a first modified example of the embodiment of the present disclosure. [Figure 9] FIG. 10 is an enlarged cross-sectional view showing the cross-sectional structure of a pixel array unit according to a second modification of the embodiment of the present disclosure. [Figure 10] FIG. 10 is an enlarged cross-sectional view showing the cross-sectional structure of a pixel array unit according to a third modification of the embodiment of the present disclosure. [Figure 11] FIG. 10 is an enlarged cross-sectional view showing the cross-sectional structure of a pixel array unit according to a fourth modified example of the embodiment of the present disclosure. [Figure 12] FIG. 11 is an enlarged cross-sectional view showing the cross-sectional structure of a pixel array unit according to a fifth modified example of the embodiment of the present disclosure. [Figure 13] FIG. 13 is an enlarged cross-sectional view showing the cross-sectional structure of a pixel array unit according to a sixth modified example of the embodiment of the present disclosure. [Figure 14] FIG. 13 is an enlarged cross-sectional view showing the cross-sectional structure of a pixel array unit according to a seventh modified example of the embodiment of the present disclosure. [Figure 15] FIG. 13 is an enlarged cross-sectional view showing the cross-sectional structure of a pixel array unit according to Modification 8 of the embodiment of the present disclosure. [Figure 16] FIG. 13 is a plan view for explaining the arrangement of unit pixels, color filters, and on-chip lenses in a pixel array section according to a ninth modification of the embodiment of the present disclosure. [Figure 17] FIG. 17 is a cross-sectional view taken along the line BB shown in FIG. 16. [Figure 18] FIG. 23 is a plan view for explaining the arrangement of unit pixels, color filters, and on-chip lenses in a pixel array section according to a tenth modification of the embodiment of the present disclosure. [Figure 19] FIG. 19 is a cross-sectional view taken along the line CC shown in FIG. 18. [Figure 20] FIG. 23 is a plan view for explaining the arrangement of unit pixels, color filters, and on-chip lenses in a pixel array section according to an eleventh modification of the embodiment of the present disclosure. [Figure 21] FIG. 21 is a cross-sectional view taken along the line DD in FIG. 20. [Figure 22]FIG. 23 is a plan view for explaining the arrangement of unit pixels, color filters, and on-chip lenses in a pixel array section according to a twelfth modification of the embodiment of the present disclosure. [Figure 23] 23 is a cross-sectional view taken along the line EE shown in FIG. 22. [Figure 24] FIG. 23 is a plan view for explaining the arrangement of pixel groups and light collection points in a pixel array section according to a thirteenth modification of the embodiment of the present disclosure. [Figure 25] 1 is a block diagram illustrating an example of the configuration of an imaging device as an electronic device to which the technology according to the present disclosure is applied. [Figure 26] 1 is a block diagram showing an example of a schematic configuration of a vehicle control system; [Figure 27] FIG. 2 is an explanatory diagram showing an example of the installation positions of an outside-vehicle information detection unit and an imaging unit. [Figure 28] FIG. 1 is a diagram illustrating an example of a schematic configuration of an endoscopic surgery system. [Figure 29] FIG. 2 is a block diagram showing an example of the functional configuration of a camera head and a CCU. DETAILED DESCRIPTION OF THE INVENTION

[0009] Hereinafter, each embodiment of the present disclosure will be described in detail with reference to the drawings. In the following embodiments, the same components are designated by the same reference numerals, and redundant description will be omitted.

[0010] In recent years, there has been a technology in back-illuminated CMOS (Complementary Metal Oxide Semiconductor) image sensors that realizes phase difference detection by irradiating light onto multiple photodiodes from the same on-chip lens.

[0011] However, in the above-described conventional technology, when light is incident on a plurality of photodiodes from the same on-chip lens, the incident light may be significantly scattered in the separation regions provided between the plurality of photodiodes.

[0012] For example, if the isolation region is made of a dielectric (e.g., SiO2), the light may be significantly scattered at the edge of the isolation region on the light incident side due to the large difference in refractive index between the dielectric and the silicon substrate. This significantly scattered light may then be incident on another photodiode, causing color mixing within the pixel array.

[0013] Therefore, there is a need for a solid-state imaging device that includes a pixel array section that can suppress the occurrence of color mixture.

[0014] [Configuration of solid-state imaging device] 1 is a system configuration diagram showing a schematic configuration example of a solid-state imaging device 1 according to an embodiment of the present disclosure. As shown in FIG. 1, the solid-state imaging device 1, which is a CMOS image sensor, includes a pixel array unit 10, a system control unit 12, a vertical drive unit 13, a column readout circuit unit 14, a column signal processing unit 15, a horizontal drive unit 16, and a signal processing unit 17.

[0015] The pixel array section 10, system control section 12, vertical drive section 13, column readout circuit section 14, column signal processing section 15, horizontal drive section 16 and signal processing section 17 are provided on the same semiconductor substrate or on multiple electrically connected stacked semiconductor substrates.

[0016] The pixel array section 10 has effective unit pixels (hereinafter also referred to as "unit pixels") 11 arranged two-dimensionally in a matrix, each having a photoelectric conversion element (photodiode 21 (see Figure 3)) that can photoelectrically convert an amount of charge corresponding to the amount of incident light, store it internally, and output it as a signal.

[0017] In addition to the effective unit pixels 11, the pixel array section 10 may include an area in which dummy unit pixels having a structure that does not have a photodiode 21, and light-shielding unit pixels that block light from entering from outside by shading the light-receiving surface, are arranged in rows and / or columns.

[0018] The light-shielded unit pixel may have the same configuration as the effective unit pixel 11, except that the light-receiving surface is structured so as to be light-shielded. In the following description, the photocharge corresponding to the amount of incident light may also be simply referred to as "charge," and the unit pixel 11 may also be simply referred to as "pixel."

[0019] In the pixel array unit 10, pixel drive lines LD are formed for each row along the left-right direction in the drawing (the direction in which pixels in a pixel row are arranged) for the matrix-like pixel arrangement, and vertical pixel wiring LV is formed for each column along the up-down direction in the drawing (the direction in which pixels in a pixel column are arranged). One end of the pixel drive line LD is connected to an output terminal of the vertical drive unit 13 corresponding to each row.

[0020] The column readout circuit unit 14 includes at least a circuit for supplying a constant current to the unit pixels 11 in a selected row in the pixel array unit 10 for each column, a current mirror circuit, and a switch for selecting the unit pixel 11 to be read out.

[0021] The column readout circuit unit 14 forms an amplifier together with the transistor in the selected pixel in the pixel array unit 10, converts the photocharge signal into a voltage signal, and outputs it to the vertical pixel line LV.

[0022] The vertical drive unit 13 includes a shift register, an address decoder, etc., and drives each unit pixel 11 of the pixel array unit 10, either all pixels at the same time or row by row, etc. Although the specific configuration of this vertical drive unit 13 is not shown in the figure, it is configured to have a readout scanning system and a sweep scanning system or a batch sweep and batch transfer system.

[0023] The readout scanning system sequentially selects and scans the unit pixels 11 of the pixel array section 10 row by row to read out pixel signals from the unit pixels 11. In the case of row driving (rolling shutter operation), for the readout row on which the readout scanning system is to perform readout scanning, the sweepout scanning is performed prior to the readout scanning by the shutter speed.

[0024] In the case of global exposure (global shutter operation), a collective sweep is performed prior to the collective transfer by the time of the shutter speed. This sweep sweeps out (resets) unnecessary charges from the photodiodes 21 of the unit pixels 11 in the readout row. The sweeping out (resetting) of unnecessary charges then performs a so-called electronic shutter operation.

[0025] Here, the electronic shutter operation refers to an operation of discarding unnecessary photocharges that have been accumulated in the photodiode 21 until immediately before, and starting new exposure (starting accumulation of photocharges).

[0026] The signal read by the readout operation by the readout scanning system corresponds to the amount of light that has entered since the immediately preceding readout operation or electronic shutter operation. In the case of row driving, the period from the readout timing of the immediately preceding readout operation or the sweep timing of the electronic shutter operation to the readout timing of the current readout operation is the accumulation time (exposure time) of the photocharge in the unit pixel 11. In the case of global exposure, the time from the collective sweep to the collective transfer is the accumulation time (exposure time).

[0027] The pixel signals output from each unit pixel 11 in a pixel row selected and scanned by the vertical drive unit 13 are supplied through each vertical pixel wiring LV to a column signal processing unit 15. The column signal processing unit 15 performs predetermined signal processing on the pixel signals output from each unit pixel 11 in the selected row through the vertical pixel wiring LV for each pixel column in the pixel array unit 10, and temporarily stores the pixel signals after signal processing.

[0028] Specifically, the column signal processing unit 15 performs at least noise removal processing, such as CDS (Correlated Double Sampling) processing, as signal processing. The CDS processing by the column signal processing unit 15 removes pixel-specific fixed pattern noise such as reset noise and threshold variation of the amplification transistor AMP.

[0029] In addition to the noise removal processing, the column signal processing unit 15 may be configured to have, for example, an AD conversion function so as to output pixel signals as digital signals.

[0030] The horizontal driving unit 16 includes a shift register, an address decoder, etc., and sequentially selects unit circuits corresponding to pixel columns in the column signal processing unit 15. By selective scanning by this horizontal driving unit 16, pixel signals that have been signal-processed by the column signal processing unit 15 are output sequentially to the signal processing unit 17.

[0031] The system control unit 12 includes a timing generator that generates various timing signals, and controls the driving of the vertical driving unit 13, column signal processing unit 15, horizontal driving unit 16, etc. based on the various timing signals generated by the timing generator.

[0032] The solid-state imaging device 1 further includes a signal processing unit 17 and a data storage unit (not shown). The signal processing unit 17 has at least an addition processing function and performs various signal processing such as addition processing on the pixel signals output from the column signal processing unit 15.

[0033] The data storage unit temporarily stores data necessary for signal processing in the signal processing unit 17. The signal processing unit 17 and the data storage unit may be an external signal processing unit provided on a board separate from the solid-state imaging device 1, such as a DSP (Digital Signal Processor) or software processing, or may be mounted on the same board as the solid-state imaging device 1.

[0034] [Pixel array configuration] Next, a detailed configuration of the pixel array section 10 will be described with reference to Fig. 2 and Fig. 3. Fig. 2 is a plan view for explaining the arrangement of unit pixels 11, color filters 40, and on-chip lenses 50 of the pixel array section 10 according to the embodiment of the present disclosure, and Fig. 3 is a cross-sectional view taken along line AA in Fig. 2.

[0035] As shown in FIG. 3 and other figures, the pixel array section 10 includes a semiconductor layer 20, a fixed charge film 30, a plurality of color filters 40, and a plurality of on-chip lenses 50.

[0036] The semiconductor layer 20 includes, for example, silicon. The semiconductor layer 20 has a plurality of photodiodes (PD) 21. The photodiodes 21 are an example of a photoelectric conversion section. One photodiode 21 is provided in one unit pixel 11. An example of the circuit configuration of the unit pixel 11 will be described later.

[0037] The semiconductor layer 20 also has a plurality of first isolation regions 22 and a plurality of second isolation regions 23. The first isolation regions 22 separate the plurality of photodiodes 21 onto which light L is incident via the same on-chip lens 50. On the other hand, the second isolation regions 23 separate the plurality of photodiodes 21 onto which light L is incident via different on-chip lenses 50.

[0038] In other words, when one pixel group 18 is made up of a plurality of unit pixels 11 to which light L is incident via the same on-chip lens 50, the first isolation region 22 is an isolation region that separates the plurality of unit pixels 11 that belong to the same pixel group 18. On the other hand, the second isolation region 23 is an isolation region that separates the plurality of unit pixels 11 that belong to different pixel groups 18.

[0039] 3, the first isolation region 22 and the second isolation region 23 are formed, for example, in the shape of a wall extending in the depth direction from the surface on the light incident side (i.e., the on-chip lens 50 side) of the semiconductor layer 20. Furthermore, the first isolation region 22 and the second isolation region 23 are formed so as not to penetrate the semiconductor layer 20.

[0040] In this embodiment, the refractive index of the first separation region 22 is set to be higher than the refractive index of the second separation region 23. For example, the first separation region 22 is made of a dielectric material with a high refractive index, such as tantalum oxide (Ta2O5: refractive index = 2.2 (wavelength 530 nm)) or titanium oxide (TiO2: refractive index = 2.4 (wavelength 530 nm)).

[0041] The second isolation region 23 is made of a dielectric material with a low refractive index, such as silicon oxide (SiO2: refractive index=1.5 (wavelength 530 nm)).

[0042] Here, the effects of configuring the first isolation region 22 and the second isolation region 23 as described above will be described with reference to Fig. 4 and Fig. 5. Fig. 4 is a diagram for explaining the scattering state of light L in the pixel array section 10 in a reference example.

[0043] 4 shows a reference example in which multiple photodiodes 21 are all separated by separation regions 24 having the same refractive index. Here, in order to prevent light L from leaking into adjacent photodiodes 21, it is preferable that the separation regions 24 have a large difference in refractive index from the semiconductor layer 20 made of silicon (refractive index=4.2 (wavelength 530 nm)).

[0044] This is because the greater the difference in refractive index between the photodiode 21 and the separation region 24, the greater the refraction at the interface, and therefore the proportion of light L traveling inside the photodiode 21 that is totally reflected at the interface with the separation region 24 and returns to the same photodiode 21 increases.

[0045] That is, when taking into consideration the need to optically isolate adjacent photodiodes 21, it is preferable that the isolation region 24 is entirely made of a dielectric material with a low refractive index (for example, SiO 2 ).

[0046] On the other hand, as shown in FIG. 4, in the reference example, light L is incident on multiple photodiodes 21 from the same on-chip lens 50, and therefore, light L may be incident on the light incident end of the separation region 24 that separates unit pixels 11 belonging to the same pixel group 18.

[0047] Light L incident on the light incident end of the separation region 24 is largely scattered due to the large difference in refractive index between the separation region 24 and the photodiode 21, and leaks into another photodiode 21. This may cause color mixing in the pixel array unit 10 of the reference example.

[0048] 5 is a diagram for explaining the scattering state of light L in the pixel array unit 10 according to the embodiment of the present disclosure. As shown in FIG. 5, in the embodiment, the first isolation region 22 is made of a dielectric material with a high refractive index, and the second isolation region 23 is made of a dielectric material with a low refractive index.

[0049] Furthermore, in the pixel array section 10 according to the embodiment, as in the reference example, light L may be incident on the light incident end of the first isolation region 22 that separates multiple unit pixels 11 belonging to the same pixel group 18.

[0050] However, since the difference in refractive index between the first separation region 22 and the photodiode 21 is smaller than in the reference example, the light L incident on the light incident side end of the first separation region 22 is not scattered significantly, as shown in FIG.

[0051] Therefore, according to the embodiment, it is possible to prevent the scattered light from leaking into another photodiode 21, and therefore it is possible to prevent the occurrence of color mixing due to the scattered light.

[0052] In the embodiment, the second isolation region 23 that separates the unit pixels 11 belonging to different pixel groups 18 is made of a dielectric material with a low refractive index. This makes it possible to increase the difference in refractive index between the photodiode 21 and the second isolation region 23, thereby increasing the proportion of light L that is totally reflected at the interface between the photodiode 21 and the second isolation region 23.

[0053] That is, in the embodiment, it is possible to prevent the light L incident on the photodiode 21 from the on-chip lens 50 from leaking into another photodiode 21. Therefore, according to the embodiment, it is possible to prevent the occurrence of color mixing due to the light L incident on the photodiode 21.

[0054] As shown in FIG. 2 and other figures, the second separation region 23 is not located in the center of the on-chip lens 50 but is located on the periphery of the on-chip lens 50, and therefore light L is hardly incident on the end of the second separation region 23 on the light incident side.

[0055] Therefore, since the degree to which light L is scattered at the end on the light incident side is very small, there is no practical problem even if the second separation region 23 is made of a dielectric material with a low refractive index.

[0056] As described above, in the embodiment, the occurrence of color mixing can be suppressed by configuring the first separation region 22 from a dielectric material with a high refractive index and the second separation region 23 from a dielectric material with a low refractive index. That is, according to the embodiment, the occurrence of color mixing can be suppressed by making the refractive index of the first separation region 22 larger than the refractive index of the second separation region 23.

[0057] For example, in an embodiment where the first separation region 22 is made of titanium oxide and the second separation region 23 is made of silicon oxide, a color mixing reduction effect of approximately 5% can be achieved compared to a reference example where the separation region 24 is made of silicon oxide (when the incident angle of light L is 30°).

[0058] In the embodiment, the refractive index of the first separation region 22 at a wavelength of 530 nm is preferably equal to or greater than 2.0 and less than 4.2, which further reduces the difference in refractive index between the first separation region 22 and the photodiode 21, thereby further suppressing color mixing due to scattered light.

[0059] In the embodiment, the refractive index of the second separation region 23 at a wavelength of 530 nm is preferably 1.0 or more and 1.5 or less. This makes it possible to further increase the difference in refractive index between the photodiode 21 and the second separation region 23, thereby further suppressing color mixing caused by the light L incident on the photodiode 21.

[0060] The second isolation region 23 is not limited to a low-refractive-index dielectric material and may be made of air, for example. That is, the second isolation region 23 may be made of a trench filled with air, with nothing buried therein.

[0061] 2 and 3, the description of other parts of the pixel array section 10 will continue. The fixed charge film 30 has the function of fixing charges (here, holes) at the interface between the photodiode 21 and the color filter 40. It is preferable to use a high dielectric material that has a large amount of fixed charge as the material for the fixed charge film 30.

[0062] The fixed charge film 30 is made of, for example, hafnium oxide (HfO2), aluminum oxide (Al2O3), tantalum oxide, zirconium oxide (ZrO2), titanium oxide, magnesium oxide (MgO2), lanthanum oxide (La2O3), or the like.

[0063] The fixed charge film 30 may also be made of praseodymium oxide (Pr2O3), cerium oxide (CeO2), neodymium oxide (Nd2O3), promethium oxide (Pm2O3), samarium oxide (Sm2O3), europium oxide (Eu2O3), or the like.

[0064] The fixed charge film 30 may also be made of gadolinium oxide (Gd2O3), terbium oxide (Tb2O3), dysprosium oxide (Dy2O3), holmium oxide (Ho2O3), erbium oxide (Er2O3), thulium oxide (Tm2O3), or the like.

[0065] The fixed charge film 30 may also be made of ytterbium oxide (Yb2O3), lutetium oxide (Lu2O3), yttrium oxide (Y2O3), aluminum nitride (AlN), hafnium oxynitride (HfON), aluminum oxynitride film (AlON), or the like.

[0066] The color filter 40 is provided between the on-chip lens 50 and the fixed charge film 30, and includes a red filter 40R, a green filter 40G, and a blue filter 40B. The red filter 40R is an example of a red color filter 40.

[0067] Any one of the red filter 40R, the green filter 40G, and the blue filter 40B is disposed in accordance with the corresponding unit pixel 11 and on-chip lens 50.

[0068] 2, one of a red filter 40R, a green filter 40G, and a blue filter 40B is provided for each on-chip lens 50. In the following drawings, for ease of understanding, the red filter 40R is hatched with diagonal lines slanting downward to the left, the green filter 40G is hatched with dots, and the blue filter 40B is hatched with diagonal lines slanting downward to the right.

[0069] The color filters 40 are arranged in a regular color array (for example, a Bayer array), which allows the pixel array section 10 to obtain received light data of colors corresponding to the color array.

[0070] In the example of FIG. 2, a red filter 40R, a green filter 40G, and a blue filter 40B are provided as the color filter 40, but a white filter may also be provided in addition to these.

[0071] The on-chip lens 50 is provided on the side of the semiconductor layer 20 where light L is incident, and has the function of focusing the light L toward the corresponding photodiode 21. The on-chip lens 50 is made of, for example, an organic material or silicon oxide.

[0072] 2, two rows and two columns of unit pixels 11 are provided for each on-chip lens 50. That is, one pixel group 18 is made up of two rows and two columns of unit pixels 11. One of a red filter 40R, a green filter 40G, and a blue filter 40B is provided for each pixel group 18.

[0073] In the pixel array unit 10 having the configuration described above, a phase difference can be detected by a pair of unit pixels 11 adjacent to each other in the left-right direction sharing the same on-chip lens 50 and color filter 40. Therefore, according to the embodiment, the solid-state imaging device 1 can be provided with an autofocus function of a phase difference detection type.

[0074] As described above, the embodiment can suppress the occurrence of color mixing between a pair of unit pixels 11 that share the same on-chip lens 50 and color filter 40. Therefore, according to the embodiment, it is possible to improve the autofocus accuracy of the phase difference detection method in the solid-state imaging device 1.

[0075] Furthermore, according to the embodiment, the unit pixels 11 arranged in two rows and two columns share the same color filter 40, so that the solid-state imaging device 1 can be provided with an HDR (High Dynamic Range) function and a re-mosaic function.

[0076] In the embodiment, the first isolation region 22 and the second isolation region 23 are provided so as not to penetrate the semiconductor layer 20 in the depth direction. This eliminates the need to penetrate trenches formed in the semiconductor layer 20 when forming the first isolation region 22 and the second isolation region 23, thereby reducing the manufacturing cost of the pixel array section 10.

[0077] In FIG. 3, on the side opposite to the light incident side of the semiconductor layer 20, there are provided a plurality of pixel transistors that perform operations such as reading out the charges accumulated in the photodiode 21, and a multilayer wiring layer including a plurality of wiring layers and interlayer insulating films, but neither is shown in the figure.

[0078] [Example of circuit configuration of unit pixel] Next, an example of the circuit configuration of the unit pixel 11 will be described with reference to Fig. 6. Fig. 6 is a circuit diagram showing an example of the circuit configuration of the unit pixel 11 according to an embodiment of the present disclosure.

[0079] The unit pixel 11 includes a photodiode 21 as a photoelectric conversion unit, a transfer transistor 61 , a floating diffusion 62 , a reset transistor 63 , an amplification transistor 64 , and a selection transistor 65 .

[0080] The photodiode 21 generates and accumulates electric charges (signal charges) according to the amount of light received. The photodiode 21 has an anode terminal grounded and a cathode terminal connected to a floating diffusion 62 via a transfer transistor 61.

[0081] When the transfer transistor 61 is turned on by a transfer signal TG, the transfer transistor 61 reads out the charge generated in the photodiode 21 and transfers it to the floating diffusion 62.

[0082] The floating diffusion 62 holds the charge read out from the photodiode 21. When the reset transistor 63 is turned on by a reset signal RST, it discharges the charge accumulated in the floating diffusion 62 to the drain (constant voltage source Vdd), thereby resetting the potential of the floating diffusion 62.

[0083] The amplification transistor 64 outputs a pixel signal according to the potential of the floating diffusion 62. That is, the amplification transistor 64 configures a source follower circuit together with a load (not shown) serving as a constant current source connected via a vertical signal line 66.

[0084] The amplification transistor 64 then outputs a pixel signal indicating a level corresponding to the charge accumulated in the floating diffusion 62 to the column signal processing unit 15 (see FIG. 1) via the selection transistor 65.

[0085] The selection transistor 65 is turned on when the unit pixel 11 is selected by the selection signal SEL, and outputs a pixel signal generated in the unit pixel 11 to the column signal processing unit 15 via a vertical signal line 66. The signal lines through which the transfer signal TG, the selection signal SEL, and the reset signal RST are transmitted are connected to the vertical drive unit 13 (see FIG. 1).

[0086] The unit pixel 11 can be configured as described above, but is not limited to this configuration and other configurations can also be adopted. For example, a shared pixel structure can be adopted in which multiple unit pixels 11 share the floating diffusion 62, reset transistor 63, amplification transistor 64, and selection transistor 65.

[0087] [Various variations] Next, various modified examples of the embodiment will be described with reference to Figures 7 to 24. Figure 7 is a diagram for explaining the structure of the second isolation region 23 of the pixel array section 10 according to Modification 1 of the embodiment of the present disclosure.

[0088] In the first modification, the fixed charge film 30 is composed of a stacked first fixed charge film 31 and a second fixed charge film 32. The first fixed charge film 31 is a layer that is in direct contact with the photodiode 21, and is composed of a dielectric material (such as aluminum oxide) that has a large amount of fixed charge.

[0089] Furthermore, the first fixed charge film 31 is provided on the side surface of the photodiode 21 (that is, between the photodiode 21 and the second isolation region 23) in addition to the surface on the light incident side of the photodiode 21.

[0090] The second fixed charge film 32 is a layer formed on the first fixed charge film 31, and is made of a dielectric material with a high refractive index (for example, tantalum oxide or titanium oxide).

[0091] In addition, in the first modification, a silicon oxide film 25 is provided on the fixed charge film 30. The silicon oxide film 25 is provided integrally with the second isolation region 23. For example, by forming the silicon oxide film 25 so as to fill a trench formed at a position corresponding to the second isolation region 23, the silicon oxide film 25 and the second isolation region 23 can be configured integrally.

[0092] 8 is a diagram illustrating the structure of the first isolation region 22 of the pixel array section 10 according to Modification 1 of the embodiment of the present disclosure. As shown in Fig. 8, in Modification 1, the first isolation region 22 is provided integrally with the second fixed charge film 32. That is, in Modification 1, the first isolation region 22 contains the same material as the fixed charge film 30 (specifically, the second fixed charge film 32).

[0093] For example, by forming the second fixed charge film 32 so as to fill a trench formed at a position corresponding to the first isolation region 22, the second fixed charge film 32 and the first isolation region 22 can be configured as an integral unit.

[0094] Therefore, according to the first modification, the second fixed charge film 32 and the first isolation region 22 can be formed at the same time, and therefore the manufacturing cost of the pixel array section 10 can be reduced.

[0095] Furthermore, in the first modification, the silicon oxide film 25 and the second isolation region 23 can be formed at the same time, and therefore the manufacturing cost of the pixel array section 10 can be reduced.

[0096] In Modification 1, the thickness of the first isolation region 22 and the second isolation region 23 is preferably about 80 nm. The thickness of the first fixed charge film 31 adjacent to the first isolation region 22 or the second isolation region 23 is preferably about 15 nm.

[0097] In addition, in variant example 1, an example is shown in which the first fixed charge film 31 is provided adjacent to the first isolation region 22 or the second isolation region 23, but the first fixed charge film 31 does not have to be provided adjacent to the first isolation region 22 or the second isolation region 23.

[0098] 9 is an enlarged cross-sectional view showing the cross-sectional structure of the pixel array section 10 according to Modification 2 of the embodiment of the present disclosure. Modification 2 differs from the embodiment in that the second isolation region 23 penetrates the semiconductor layer 20.

[0099] In this way, by making the second isolation region 23 penetrate in the depth direction, it is possible to satisfactorily optically isolate adjacent photodiodes 21 of different colors from each other. Therefore, according to the second modification, it is possible to further suppress the occurrence of color mixing.

[0100] 10 is an enlarged cross-sectional view showing a cross-sectional structure of a pixel array section 10 according to Modification 3 of the embodiment of the present disclosure. Modification 3 differs from Modification 2 in that both the first isolation region 22 and the second isolation region 23 penetrate the semiconductor layer 20.

[0101] In this way, by penetrating both the first isolation region 22 and the second isolation region 23 in the depth direction, it is possible to satisfactorily optically isolate all adjacent photodiodes 21. Therefore, according to the third modification, it is possible to further suppress the occurrence of color mixing.

[0102] 11 is an enlarged cross-sectional view showing the cross-sectional structure of the pixel array section 10 according to Modification 4 of the embodiment of the present disclosure. Modification 4 differs from the embodiment in the structure of the first isolation region 22.

[0103] Specifically, the light incident side end 22a of the first separation region 22 is made of a high refractive index dielectric (for example, tantalum oxide or titanium oxide) as in the embodiment, while the portion 22b of the first separation region 22 other than the end 22a is made of a low refractive index dielectric (for example, silicon oxide).

[0104] Here, since there is a small difference in refractive index between end 22a of first separation region 22 and photodiode 21, light L incident on end 22a of first separation region 22 is not significantly scattered. Therefore, according to Modification 4, it is possible to suppress color mixing due to scattered light.

[0105] Furthermore, in variant example 4, since the portion 22b other than the end 22a on the light incident side is made of a dielectric material with a low refractive index, the proportion of light incident on the photodiode 21 that is totally reflected by the first separation region 22 can be increased.

[0106] That is, in the fourth modification, it is possible to prevent light incident on a photodiode 21 from leaking into an adjacent photodiode 21 via the first isolation region 22. Therefore, according to the fourth modification, it is possible to further prevent color mixing caused by the light L incident on the photodiode 21.

[0107] As described above, in Modification 4, in first separation region 22, the refractive index of end 22a is made larger than the refractive index of second separation region 23, and the refractive index of portion 22b other than end 22a is made smaller than the refractive index of end 22a. This makes it possible to suppress, in first separation region 22, both the occurrence of color mixing due to scattered light and the occurrence of color mixing due to light L incident on photodiode 21.

[0108] In addition, in Modification 4, it is preferable that the depth of end 22a on the light incident side of first separation region 22 is 20 nm or more and 100 nm or less. This makes it possible to suppress, in a balanced manner, the occurrence of color mixing due to scattered light and the occurrence of color mixing due to light L incident on photodiode 21 in first separation region 22.

[0109] 12 is an enlarged cross-sectional view showing the cross-sectional structure of the pixel array section 10 according to Modification 5 of the embodiment of the present disclosure. Modification 5 differs from the embodiment in the structure of the first isolation region 22.

[0110] Specifically, the first separation region 22 has a smaller thickness than the second separation region 23. This reduces the area of ​​the portion where light L incident on the end of the first separation region 22 is scattered, thereby preventing the light L from being scattered significantly. Therefore, according to the fifth modification, it is possible to further prevent color mixing due to scattered light.

[0111] 13 is an enlarged cross-sectional view showing the cross-sectional structure of a pixel array unit 10 according to a sixth modification of the embodiment of the present disclosure. In this sixth modification, the first isolation regions 22A that separate the multiple photodiodes 21 to which light L is incident via the red filter 40R are separated by an ion-implanted region rather than a dielectric. In other words, the first isolation regions 22A of the pixel groups 18 having the red filter 40R are separated by an ion-implanted region rather than a dielectric.

[0112] That is, the first isolation region 22A is made of the same material (for example, silicon) as the semiconductor layer 20, and has the same refractive index as the semiconductor layer 20. In the sixth modification, the first isolation region 22 of the pixel group 18 having the green filter 40G and the blue filter 40B is made of a dielectric material with a high refractive index (for example, tantalum oxide or titanium oxide), as in the embodiment.

[0113] This eliminates the need to form trenches in the semiconductor layer 20 when forming the first isolation region 22A, thereby reducing the manufacturing cost of the pixel array section 10.

[0114] In the pixel group 18 having the red filter 40R, the wavelength of the incident light L is long, and therefore the phase difference detection accuracy is lower than that of the pixel groups 18 of other colors. Therefore, by detecting the phase difference by preferentially utilizing the pixel groups 18 of other colors, it is possible to achieve the same phase difference detection accuracy as in the embodiment.

[0115] 14 is an enlarged cross-sectional view showing the cross-sectional structure of the pixel array section 10 according to Modification 7 of the embodiment of the present disclosure. Modification 7 differs from the embodiment in the structure of the color filter 40.

[0116] Specifically, an inter-pixel light-shielding film 41 is provided between adjacent color filters 40 of different colors. The inter-pixel light-shielding film 41 is made of a material that blocks light L. It is desirable that the material used for the inter-pixel light-shielding film 41 has strong light-shielding properties and can be precisely processed by microfabrication, for example, etching.

[0117] The inter-pixel light-shielding film 41 can be formed of a metal film such as tungsten (W), aluminum (Al), copper (Cu), titanium (Ti), molybdenum (Mo), or nickel (Ni).

[0118] In variant example 7, by providing such an inter-pixel light-shielding film 41, it is possible to prevent light L that is obliquely incident on a color filter 40 of a different color from the color filter 40 corresponding to the unit pixel 11 from entering the unit pixel 11.

[0119] Therefore, according to the seventh modification, the occurrence of color mixing due to the light L obliquely incident on the color filter 40 can be suppressed.

[0120] 14 shows an example in which the inter-pixel light-shielding film 41 is provided so as to be in contact with the light incident surface of the semiconductor layer 20, but the arrangement of the inter-pixel light-shielding film 41 is not limited to this example. Fig. 15 is an enlarged cross-sectional view showing the cross-sectional structure of the pixel array section 10 according to Modification 8 of the embodiment of the present disclosure.

[0121] 15, the inter-pixel light-shielding film 41 may be provided so as to be in contact with the light incident surface of the silicon oxide film 25 shown in Modification 1. In this Modification 8, as in Modification 7, it is possible to suppress color mixing caused by light L obliquely incident on the color filter 40.

[0122] The inter-pixel light-shielding film 41 may be provided so as to be in contact with the surface of the fixed charge film 30 on the light incident side.

[0123] FIG. 16 is a plan view for explaining the arrangement of the unit pixels 11, color filters 40, and on-chip lenses 50 of the pixel array section 10 according to the ninth modification of the embodiment of the present disclosure, and FIG. 17 is a cross-sectional view taken along the line BB in FIG. 16 .

[0124] 16, in the pixel array section 10 according to Modification 9, one pixel group 18 is formed by a pair of unit pixels 11 adjacent to each other in the left-right direction. Each pixel group 18 is provided with one on-chip lens 50 and one of a red filter 40R, a green filter 40G, and a blue filter 40B.

[0125] In the 9th modification, a phase difference can be detected by sharing the same on-chip lens 50 and color filter 40 between a pair of unit pixels 11 adjacent to each other in the left-right direction. Therefore, the 9th modification can provide the solid-state imaging device 1 with an autofocus function based on a phase difference detection method.

[0126] In the ninth modification, a plurality of photodiodes 21 to which light L is incident through the same on-chip lens 50 are separated by a first separation region 22, and a plurality of photodiodes 21 to which light L is incident through different on-chip lenses 50 are separated by a second separation region 23.

[0127] This makes it possible to suppress the occurrence of color mixing between a pair of unit pixels 11 that share the same on-chip lens 50 and color filter 40. Therefore, according to the 9th modification, it is possible to improve the autofocus accuracy of the phase difference detection method in the solid-state imaging device 1.

[0128] FIG. 18 is a plan view for explaining the arrangement of the unit pixels 11, color filters 40, and on-chip lenses 50 of the pixel array section 10 according to the tenth modification of the embodiment of the present disclosure, and FIG. 19 is a cross-sectional view taken along the arrow CC shown in FIG. 18.

[0129] 18, in the pixel array section 10 according to the tenth modification, one pixel group 18 is formed by a pair of unit pixels 11 adjacent to each other in the left-right direction. One on-chip lens 50 is provided for each pixel group 18. One of a red filter 40R, a green filter 40G, and a blue filter 40B is provided for each of a plurality of pixel groups 18 (two rows and two columns in FIG. 18).

[0130] In the modification 10, a phase difference can be detected by a pair of unit pixels 11 adjacent to each other in the left-right direction sharing the same on-chip lens 50 and color filter 40. Therefore, according to the modification 10, it is possible to provide the solid-state imaging device 1 with an autofocus function of a phase difference detection type.

[0131] In the tenth modification, a plurality of photodiodes 21 to which light L is incident through the same on-chip lens 50 are separated by a first separation region 22, and a plurality of photodiodes 21 to which light L is incident through different on-chip lenses 50 are separated by a second separation region 23.

[0132] This makes it possible to suppress the occurrence of color mixing in a pair of unit pixels 11 that share the same on-chip lens 50 and color filter 40. Therefore, according to Modification 10, it is possible to improve the autofocus accuracy of the phase difference detection method in the solid-state imaging device 1.

[0133] Furthermore, according to the tenth modification, the same color filter 40 is shared by a plurality of unit pixels 11, so that the solid-state imaging device 1 can be provided with an HDR function or a re-mosaic function.

[0134] FIG. 20 is a plan view for explaining the arrangement of the unit pixels 11, color filters 40, and on-chip lenses 50 of the pixel array section 10 according to the eleventh modification of the embodiment of the present disclosure, and FIG. 21 is a cross-sectional view taken along the arrow DD shown in FIG. 20.

[0135] 20 , the pixel array unit 10 according to the 11th modification includes a pixel group 18 having a pair of unit pixels 11 adjacent to each other in the left-right direction. Furthermore, since the pixel group 18 shares the same on-chip lens 50 and green filter 40G, the solid-state imaging device 1 according to the 11th modification can detect a phase difference.

[0136] In the eleventh modification, a plurality of photodiodes 21 to which light L is incident through the same on-chip lens 50 are separated by a first separation region 22, and a plurality of photodiodes 21 to which light L is incident through different on-chip lenses 50 are separated by a second separation region 23.

[0137] This makes it possible to suppress the occurrence of color mixing in a pair of unit pixels 11 that share the same on-chip lens 50 and green filter 40G. Therefore, according to Modification 11, it is possible to improve the autofocus accuracy of the phase difference detection method in the solid-state imaging device 1.

[0138] In addition, in the eleventh modification, as shown in FIG. 20, the same color filter 40 is shared by a plurality of unit pixels 11, so that the solid-state imaging device 1 can be provided with an HDR function and a re-mosaic function.

[0139] 22 is a plan view for explaining the arrangement of the unit pixels 11, color filters 40, and on-chip lenses 50 of the pixel array section 10 according to the twelfth modification of the embodiment of the present disclosure, and FIG. 23 is a cross-sectional view taken along the arrow EE line shown in FIG. 22.

[0140] 22 , the pixel array unit 10 according to the modification 12 includes a pixel group 18 having a pair of unit pixels 11 adjacent to each other in the left-right direction. Furthermore, since the pixel group 18 shares the same on-chip lens 50 and green filter 40G, the solid-state imaging device 1 according to the modification 12 can detect a phase difference.

[0141] In the twelfth modification, a plurality of photodiodes 21 to which light L is incident through the same on-chip lens 50 are separated by a first separation region 22, and a plurality of photodiodes 21 to which light L is incident through different on-chip lenses 50 are separated by a second separation region 23.

[0142] This makes it possible to suppress the occurrence of color mixing in a pair of unit pixels 11 that share the same on-chip lens 50 and green filter 40G. Therefore, according to Modification 12, it is possible to improve the autofocus accuracy of the phase difference detection method in the solid-state imaging device 1.

[0143] 24 is a plan view illustrating the arrangement of pixel groups 18 and light collection points 51 of a pixel array unit 10 according to a thirteenth modification of the embodiment of the present disclosure. In the thirteenth modification, a large number of pixel groups 18, each of which is made up of two rows and two columns of unit pixels 11, are arranged in a matrix, and one on-chip lens 50 (see FIG. 2) is provided for each pixel group 18.

[0144] In a pixel array unit 10 having a large number of pixel groups 18, the pixel group 18C located at the center of the angle of view and the pixel group 18 located at the edge of the angle of view (for example, the pixel group 18E at the corner) have different angles of incidence of light L (see FIG. 3) from the on-chip lens 50. As a result, in the pixel groups 18 at the edges, light is not sufficiently incident on the pixels 11, resulting in a decrease in pixel signal.

[0145] Therefore, in Modification 13, the position of the first isolation region 22 is changed depending on the position of the pixel group 18 on the pixel array unit 10. Specifically, in each pixel group 18, the first isolation region 22 is arranged so that the light collection point 51 of the on-chip lens 50 coincides with the intersection point of the first isolation region 22 that intersects in a cross shape.

[0146] For example, in pixel group 18C located at the center of the angle of view, since the light collection point 51C is at the center of pixel group 18, first separation region 22 is positioned so that the intersection of first separation region 22 is at the center of pixel group 18.

[0147] Furthermore, in a pixel group 18E located at the corner of the angle of view, if the light collection point 51E shifts from the center of the pixel group 18 toward the center of the pixel array section 10, the first separation region 22 is arranged so that the intersection of the first separation region 22 is similarly shifted.

[0148] In this way, by appropriately adjusting the position of the intersection in the first isolation region 22 for each pixel group 18, in variant example 13, it is possible to suppress differences in pixel signals that occur depending on the position of the pixel group 18 on the pixel array section 10.

[0149] 24 illustrates a case in which, in a pixel group 18E located at a corner of the angle of view, the light collection point 51E shifts from the center of the pixel group 18 toward the center of the pixel array unit 10. However, the direction in which the light collection point 51E shifts is not limited to the center of the pixel array unit 10, and the light collection point 51E may shift, for example, away from the center of the pixel array unit 10.

[0150] [effect] The solid-state imaging device 1 according to the embodiment includes a semiconductor layer 20, a plurality of on-chip lenses 50, a first isolation region 22, and a second isolation region 23. The semiconductor layer 20 is provided with a plurality of photoelectric conversion units (photodiodes 21). The plurality of on-chip lenses 50 cause light L to be incident on the corresponding photoelectric conversion units (photodiodes 21). The first isolation region 22 separates the plurality of photoelectric conversion units (photodiodes 21) to which the light L is incident via the same on-chip lens 50. The second isolation region 23 separates the plurality of photoelectric conversion units (photodiodes 21) to which the light L is incident via different on-chip lenses 50. The first isolation region 22 has a higher refractive index than the second isolation region 23.

[0151] This makes it possible to realize a solid-state imaging device 1 that can suppress the occurrence of color mixing.

[0152] The solid-state imaging device 1 according to the embodiment also includes color filters 40 of multiple colors provided between the semiconductor layer 20 and the on-chip lens 50. The first isolation region 22 separates multiple photoelectric conversion units (photodiodes 21) into which light L is incident via color filters 40 of the same color. The second isolation region 23 further separates multiple photoelectric conversion units (photodiodes 21) into which light L is incident via color filters 40 of different colors.

[0153] This makes it possible to improve the autofocus accuracy of the phase difference detection method in the solid-state imaging device 1.

[0154] In addition, in the solid-state imaging device 1 according to the embodiment, the first isolation region 22A that separates multiple photoelectric conversion units (photodiodes 21) into which light L is incident via a red color filter 40 (red filter 40R) has the same refractive index as the semiconductor layer 20.

[0155] This allows the manufacturing cost of the pixel array unit 10 to be reduced.

[0156] Furthermore, in the solid-state imaging device 1 according to the embodiment, the first isolation region 22 and the second isolation region 23 do not penetrate the semiconductor layer 20.

[0157] This allows the manufacturing cost of the pixel array unit 10 to be reduced.

[0158] In the solid-state imaging device 1 according to the embodiment, the first isolation region 22 does not penetrate the semiconductor layer 20, and the second isolation region 23 penetrates the semiconductor layer 20.

[0159] This makes it possible to further suppress the occurrence of color mixing.

[0160] In the solid-state imaging device 1 according to the embodiment, the first isolation region 22 and the second isolation region 23 penetrate the semiconductor layer 20.

[0161] This makes it possible to further suppress the occurrence of color mixing.

[0162] In the solid-state imaging device 1 according to the embodiment, the refractive index of the first separation region 22 at a wavelength of 530 nm is equal to or greater than 2.0 and less than 4.2.

[0163] This makes it possible to further suppress the occurrence of color mixing due to scattered light.

[0164] In the solid-state imaging device 1 according to the embodiment, the refractive index of the second separation region 23 at a wavelength of 530 nm is not less than 1.0 and not more than 1.5.

[0165] This makes it possible to further suppress the occurrence of color mixing due to the light L incident on the photodiode 21.

[0166] In the solid-state imaging device 1 according to the embodiment, the first isolation region 22 contains the same material as the fixed charge film 30 (second fixed charge film 32).

[0167] This allows the manufacturing cost of the pixel array unit 10 to be reduced.

[0168] Furthermore, in the solid-state imaging device 1 according to the embodiment, the end 22a on the light incident side of the first separation region 22 has a higher refractive index than the second separation region 23, and the portion 22b of the first separation region 22 other than the end 22a on the light incident side has a lower refractive index than the end 22a on the light incident side.

[0169] As a result, in the first isolation region 22, the occurrence of color mixing due to scattered light and the occurrence of color mixing due to light L incident on the photodiode 21 can both be suppressed.

[0170] In the solid-state imaging device 1 according to the embodiment, the depth of the end 22a on the light incident side of the first isolation region 22 is not less than 20 nm and not more than 100 nm.

[0171] This makes it possible to suppress in the first isolation region 22 both the occurrence of color mixing due to scattered light and the occurrence of color mixing due to light L incident on the photodiode 21 in a well-balanced manner.

[0172] In the solid-state imaging device 1 according to the embodiment, the first isolation region 22 is thinner than the second isolation region .

[0173] This makes it possible to further suppress the occurrence of color mixing due to scattered light.

[0174] [Electronic equipment] Note that the present disclosure is not limited to application to solid-state imaging devices, and can be applied to all electronic devices that have solid-state imaging devices, such as camera modules, imaging devices, portable terminal devices with imaging functions, and copiers that use solid-state imaging devices in their image reading units.

[0175] Examples of such imaging devices include digital still cameras and video cameras, while examples of mobile terminal devices with imaging capabilities include smartphones and tablet terminals.

[0176] Fig. 25 is a block diagram showing a configuration example of an imaging device serving as electronic device 100 to which the technology according to the present disclosure is applied. Electronic device 100 in Fig. 25 is, for example, an imaging device such as a digital still camera or a video camera, or a mobile terminal device such as a smartphone or a tablet terminal.

[0177] In FIG. 25, electronic device 100 comprises a lens group 101, a solid-state imaging device 102, a DSP circuit 103, a frame memory 104, a display unit 105, a recording unit 106, an operation unit 107, and a power supply unit 108.

[0178] In the electronic device 100 , the DSP circuit 103 , the frame memory 104 , the display unit 105 , the recording unit 106 , the operation unit 107 , and the power supply unit 108 are interconnected via a bus line 109 .

[0179] The lens group 101 captures incident light (image light) from a subject and forms an image on the imaging surface of the solid-state imaging device 102. The solid-state imaging device 102 corresponds to the solid-state imaging device 1 according to the above-described embodiment, and converts the amount of incident light formed on the imaging surface by the lens group 101 into an electrical signal on a pixel-by-pixel basis and outputs the signal as a pixel signal.

[0180] The DSP circuit 103 is a camera signal processing circuit that processes signals supplied from the solid-state imaging device 102. The frame memory 104 temporarily stores image data processed by the DSP circuit 103 on a frame-by-frame basis.

[0181] The display unit 105 is formed of a panel display device such as a liquid crystal panel or an organic EL (Electro Luminescence) panel, and displays moving images or still images captured by the solid-state imaging device 102. The recording unit 106 records image data of the moving images or still images captured by the solid-state imaging device 102 in a recording medium such as a semiconductor memory or a hard disk.

[0182] In response to user operations, the operation unit 107 issues operation commands for various functions of the electronic device 100. The power supply unit 108 appropriately supplies various types of power to the DSP circuit 103, frame memory 104, display unit 105, recording unit 106, and operation unit 107 as operating power sources to these power supply targets.

[0183] In the electronic device 100 configured as above, by applying the solid-state imaging device 1 according to each of the above-described embodiments as the solid-state imaging device 102, it is possible to suppress the occurrence of color mixture.

[0184] [Application to mobile devices] The technology according to the present disclosure (the present technology) can be applied to various products. For example, the technology according to the present disclosure may be realized as a device mounted on any type of moving body, such as an automobile, an electric vehicle, a hybrid electric vehicle, a motorcycle, a bicycle, personal mobility, an airplane, a drone, a ship, or a robot.

[0185] FIG. 26 is a block diagram showing a schematic configuration example of a vehicle control system, which is an example of a mobile object control system to which the technology according to the present disclosure can be applied.

[0186] The vehicle control system 12000 includes a plurality of electronic control units connected via a communication network 12001. In the example shown in Fig. 26, the vehicle control system 12000 includes a drive system control unit 12010, a body system control unit 12020, an outside-vehicle information detection unit 12030, an inside-vehicle information detection unit 12040, and an integrated control unit 12050. Also shown as functional components of the integrated control unit 12050 are a microcomputer 12051, an audio / video output unit 12052, and an in-vehicle network I / F (Interface) 12053.

[0187] The drivetrain control unit 12010 controls the operation of devices related to the drivetrain of the vehicle in accordance with various programs. For example, the drivetrain control unit 12010 functions as a control device for a drive force generating device for generating a drive force of the vehicle, such as an internal combustion engine or a drive motor, a drive force transmission mechanism for transmitting the drive force to the wheels, a steering mechanism for adjusting the steering angle of the vehicle, a braking device for generating a braking force of the vehicle, etc.

[0188] The body system control unit 12020 controls the operation of various devices equipped in the vehicle body according to various programs. For example, the body system control unit 12020 functions as a control device for a keyless entry system, a smart key system, a power window device, or various lamps such as headlamps, backup lamps, brake lamps, turn signals, and fog lamps. In this case, radio waves transmitted from a portable device that serves as a key or signals from various switches may be input to the body system control unit 12020. The body system control unit 12020 receives these radio waves or signals and controls the vehicle's door lock device, power window device, lamps, etc.

[0189] The outside-vehicle information detection unit 12030 detects information outside the vehicle equipped with the vehicle control system 12000. For example, an imaging unit 12031 is connected to the outside-vehicle information detection unit 12030. The outside-vehicle information detection unit 12030 causes the imaging unit 12031 to capture images outside the vehicle and receives the captured images. The outside-vehicle information detection unit 12030 may perform object detection processing or distance detection processing for people, cars, obstacles, signs, characters on the road surface, etc., based on the received images.

[0190] The imaging unit 12031 is an optical sensor that receives light and outputs an electrical signal according to the amount of light received. The imaging unit 12031 can output the electrical signal as an image, or as distance measurement information. The light received by the imaging unit 12031 may be visible light or invisible light such as infrared light.

[0191] The in-vehicle information detection unit 12040 detects information inside the vehicle. For example, a driver state detection unit 12041 that detects the state of the driver is connected to the in-vehicle information detection unit 12040. The driver state detection unit 12041 includes, for example, a camera that captures an image of the driver, and the in-vehicle information detection unit 12040 may calculate the degree of fatigue or concentration of the driver based on the detection information input from the driver state detection unit 12041, or may determine whether the driver is dozing off.

[0192] The microcomputer 12051 can calculate control target values ​​for the driving force generating device, steering mechanism, or braking device based on the information inside and outside the vehicle acquired by the outside-vehicle information detection unit 12030 or the inside-vehicle information detection unit 12040, and output control commands to the drivetrain control unit 12010. For example, the microcomputer 12051 can perform cooperative control aimed at realizing the functions of an ADAS (Advanced Driver Assistance System), including avoiding or mitigating collisions between vehicles, following based on the distance between vehicles, maintaining vehicle speed, warning of vehicle collisions, or warning of vehicle lane departure.

[0193] In addition, the microcomputer 12051 can perform cooperative control for the purpose of autonomous driving, which allows the vehicle to travel autonomously without relying on driver operation, by controlling the driving force generating device, steering mechanism, braking device, etc. based on information about the surroundings of the vehicle obtained by the outside vehicle information detection unit 12030 or the inside vehicle information detection unit 12040.

[0194] Furthermore, the microcomputer 12051 can output a control command to the body system control unit 12020 based on the information about the outside of the vehicle acquired by the outside information detection unit 12030. For example, the microcomputer 12051 can control the headlamps according to the position of a preceding vehicle or an oncoming vehicle detected by the outside information detection unit 12030, and perform cooperative control for the purpose of preventing glare, such as switching from high beams to low beams.

[0195] The audio / video output unit 12052 transmits at least one of audio and video output signals to an output device capable of visually or audibly notifying information to passengers in the vehicle or to the outside of the vehicle. In the example of Fig. 26, an audio speaker 12061, a display unit 12062, and an instrument panel 12063 are exemplified as output devices. The display unit 12062 may include, for example, at least one of an on-board display and a head-up display.

[0196] FIG. 27 is a diagram showing an example of the installation position of the imaging unit 12031.

[0197] In FIG. 27, the imaging unit 12031 includes imaging units 12101, 12102, 12103, 12104, and 12105.

[0198] The imaging units 12101, 12102, 12103, 12104, and 12105 are provided, for example, at positions such as the front nose, side mirrors, rear bumper, back door, and the top of the windshield inside the vehicle cabin of the vehicle 12100. The imaging unit 12101 provided at the front nose and the imaging unit 12105 provided at the top of the windshield inside the vehicle cabin mainly acquire images of the front of the vehicle 12100. The imaging units 12102 and 12103 provided at the side mirrors mainly acquire images of the sides of the vehicle 12100. The imaging unit 12104 provided at the rear bumper or back door mainly acquires images of the rear of the vehicle 12100. The imaging unit 12105 provided at the top of the windshield inside the vehicle cabin is mainly used to detect preceding vehicles, pedestrians, obstacles, traffic lights, traffic signs, lanes, etc.

[0199] 27 shows an example of the imaging ranges of the imaging units 12101 to 12104. Imaging range 12111 indicates the imaging range of the imaging unit 12101 provided on the front nose, imaging ranges 12112 and 12113 indicate the imaging ranges of the imaging units 12102 and 12103 provided on the side mirrors, respectively, and imaging range 12114 indicates the imaging range of the imaging unit 12104 provided on the rear bumper or back door. For example, by overlaying the image data captured by the imaging units 12101 to 12104, a bird's-eye view image of the vehicle 12100 viewed from above can be obtained.

[0200] At least one of the imaging units 12101 to 12104 may have a function of acquiring distance information. For example, at least one of the imaging units 12101 to 12104 may be a stereo camera made up of multiple imaging elements, or may be an imaging element having pixels for phase difference detection.

[0201] For example, the microcomputer 12051 can calculate the distance to each three-dimensional object within the imaging ranges 12111 to 12114 and the change in this distance over time (relative speed with respect to the vehicle 12100) based on the distance information obtained from the imaging units 12101 to 12104, thereby extracting as a preceding vehicle, in particular, the three-dimensional object that is the closest three-dimensional object on the path of the vehicle 12100 and traveling in approximately the same direction as the vehicle 12100 at a predetermined speed (for example, 0 km / h or higher). Furthermore, the microcomputer 12051 can set a vehicle-to-vehicle distance to be maintained in advance in front of the preceding vehicle, and perform automatic braking control (including follow-up stop control), automatic acceleration control (including follow-up start control), etc. In this way, cooperative control can be performed for the purpose of automatic driving, which runs autonomously without relying on driver operation.

[0202] For example, the microcomputer 12051 classifies and extracts three-dimensional object data regarding three-dimensional objects into two-wheeled vehicles, ordinary vehicles, large vehicles, pedestrians, utility poles, and other three-dimensional objects based on distance information obtained from the imaging units 12101 to 12104, and can use the data for automatic obstacle avoidance. For example, the microcomputer 12051 distinguishes obstacles around the vehicle 12100 into obstacles that are visible to the driver of the vehicle 12100 and obstacles that are difficult to see. The microcomputer 12051 then determines the collision risk, which indicates the degree of risk of collision with each obstacle, and when the collision risk is equal to or greater than a set value and a collision is possible, the microcomputer 12051 can provide driving assistance for collision avoidance by outputting an alarm to the driver via the audio speaker 12061 or the display unit 12062, or by performing forced deceleration or avoidance steering via the drivetrain control unit 12010.

[0203] At least one of the image capturing units 12101 to 12104 may be an infrared camera that detects infrared rays. For example, the microcomputer 12051 can recognize a pedestrian by determining whether or not a pedestrian is present in the images captured by the image capturing units 12101 to 12104. The pedestrian recognition is performed, for example, by extracting feature points from the images captured by the image capturing units 12101 to 12104, which are infrared cameras, and then performing pattern matching on a series of feature points that indicate the outline of an object to determine whether or not the object is a pedestrian. When the microcomputer 12051 determines that a pedestrian is present in the images captured by the image capturing units 12101 to 12104 and recognizes the pedestrian, the audio / image output unit 12052 controls the display unit 12062 to superimpose a rectangular outline on the recognized pedestrian for emphasis. The audio / image output unit 12052 may also control the display unit 12062 to display an icon or the like indicating the pedestrian at a desired position.

[0204] An example of a vehicle control system to which the technology according to the present disclosure can be applied has been described above. The technology according to the present disclosure can be applied to the imaging unit 12031 of the above-described configuration. Specifically, the solid-state imaging device 1 of FIG. 1 can be applied to the imaging unit 12031. By applying the technology according to the present disclosure to the imaging unit 12031, it is possible to suppress the occurrence of color mixing in the imaging unit 12031.

[0205] [Application example to endoscopic surgery system] The technology according to the present disclosure (the present technology) can be applied to various products. For example, the technology according to the present disclosure may be applied to an endoscopic surgery system.

[0206] FIG. 28 is a diagram showing an example of a schematic configuration of an endoscopic surgery system to which the technology according to the present disclosure (the present technology) can be applied.

[0207] 28 shows an operator (doctor) 11131 performing surgery on a patient 11132 on a patient bed 11133 using an endoscopic surgery system 11000. As shown in the figure, the endoscopic surgery system 11000 is composed of an endoscope 11100, other surgical instruments 11110 such as an insufflation tube 11111 and an energy treatment instrument 11112, a support arm device 11120 that supports the endoscope 11100, and a cart 11200 on which various devices for endoscopic surgery are mounted.

[0208] The endoscope 11100 is composed of a lens barrel 11101, a region of a predetermined length from the tip of which is inserted into a body cavity of a patient 11132, and a camera head 11102 connected to the base end of the lens barrel 11101. In the example shown, the endoscope 11100 is configured as a so-called rigid scope having a rigid lens barrel 11101, but the endoscope 11100 may also be configured as a so-called flexible scope having a flexible lens barrel.

[0209] An opening into which an objective lens is fitted is provided at the tip of the lens barrel 11101. A light source device 11203 is connected to the endoscope 11100, and light generated by the light source device 11203 is guided to the tip of the lens barrel by a light guide extending inside the lens barrel 11101, and is irradiated via the objective lens towards an object to be observed inside the body cavity of the patient 11132. The endoscope 11100 may be a direct-viewing endoscope, an oblique-viewing endoscope, or a side-viewing endoscope.

[0210] An optical system and an image sensor are provided inside the camera head 11102, and light reflected from the object of observation (observation light) is collected by the optical system onto the image sensor. The observation light is photoelectrically converted by the image sensor to generate an electrical signal corresponding to the observation light, i.e., an image signal corresponding to the observed image. The image signal is sent to a camera control unit (CCU) 11201 as RAW data.

[0211] The CCU 11201 is configured with a CPU (Central Processing Unit), a GPU (Graphics Processing Unit), etc., and comprehensively controls the operations of the endoscope 11100 and the display device 11202. Furthermore, the CCU 11201 receives an image signal from the camera head 11102, and performs various image processing on the image signal, such as development processing (demosaic processing), to display an image based on the image signal.

[0212] Under the control of the CCU 11201, the display device 11202 displays an image based on an image signal that has been subjected to image processing by the CCU 11201.

[0213] The light source device 11203 is configured from a light source such as an LED (light emitting diode), and supplies irradiation light to the endoscope 11100 when photographing an operation site or the like.

[0214] The input device 11204 is an input interface for the endoscopic surgery system 11000. A user can input various information and instructions to the endoscopic surgery system 11000 via the input device 11204. For example, the user inputs an instruction to change the imaging conditions (type of irradiating light, magnification, focal length, etc.) of the endoscope 11100.

[0215] The treatment tool control device 11205 controls the driving of the energy treatment tool 11112 for cauterizing tissue, incising, sealing blood vessels, etc. The insufflation device 11206 inflates the body cavity of the patient 11132 through the insufflation tube 11111 in order to ensure a clear field of view for the endoscope 11100 and a working space for the surgeon. The recorder 11207 is a device capable of recording various types of information related to the surgery. The printer 11208 is a device capable of printing various types of information related to the surgery in various formats such as text, images, or graphs.

[0216] The light source device 11203 that supplies illumination light to the endoscope 11100 when photographing the surgical site can be configured from a white light source configured from, for example, an LED, a laser light source, or a combination of these. When the white light source is configured from a combination of RGB laser light sources, the output intensity and output timing of each color (each wavelength) can be controlled with high precision, making it possible to adjust the white balance of the captured image in the light source device 11203. In this case, it is also possible to capture images corresponding to each RGB in a time-division manner by irradiating the object of observation with laser light from each RGB laser light source in a time-division manner and controlling the drive of the image sensor of the camera head 11102 in synchronization with the irradiation timing. According to this method, a color image can be obtained without providing a color filter to the image sensor.

[0217] Furthermore, the light source device 11203 may be controlled to change the intensity of light it outputs at predetermined time intervals. By controlling the driving of the image sensor of the camera head 11102 in synchronization with the timing of the change in light intensity to acquire images in a time-division manner and combining the images, it is possible to generate an image with a high dynamic range that is free of so-called blocked-up shadows and blown-out highlights.

[0218] The light source device 11203 may also be configured to supply light in a predetermined wavelength band corresponding to special light observation. Special light observation, for example, utilizes the wavelength dependence of light absorption in body tissues to irradiate light with a narrower band than the light irradiated during normal observation (i.e., white light), thereby capturing high-contrast images of specific tissues, such as blood vessels on the surface of mucous membranes, known as narrow-band imaging. Alternatively, special light observation may be performed using fluorescence observation, in which images are obtained using fluorescence generated by irradiating excitation light. Fluorescence observation can involve irradiating excitation light onto body tissues and observing the fluorescence from the tissues (autofluorescence observation), or locally injecting a reagent such as indocyanine green (ICG) into the body tissue and irradiating the tissue with excitation light corresponding to the fluorescent wavelength of the reagent to obtain a fluorescent image. The light source device 11203 may be configured to supply narrow-band light and / or excitation light corresponding to such special light observation.

[0219] FIG. 29 is a block diagram showing an example of the functional configuration of the camera head 11102 and the CCU 11201 shown in FIG.

[0220] The camera head 11102 has a lens unit 11401, an imaging unit 11402, a drive unit 11403, a communication unit 11404, and a camera head control unit 11405. The CCU 11201 has a communication unit 11411, an image processing unit 11412, and a control unit 11413. The camera head 11102 and the CCU 11201 are connected to each other by a transmission cable 11400 so that they can communicate with each other.

[0221] The lens unit 11401 is an optical system provided at the connection point with the lens barrel 11101. Observation light taken in from the tip of the lens barrel 11101 is guided to the camera head 11102 and enters the lens unit 11401. The lens unit 11401 is composed of a combination of multiple lenses including a zoom lens and a focus lens.

[0222] The imaging unit 11402 may include one imaging element (a so-called single-chip type) or multiple imaging elements (a so-called multi-chip type). When the imaging unit 11402 is configured as a multi-chip type, for example, each imaging element may generate an image signal corresponding to each of RGB, and a color image may be obtained by combining these signals. Alternatively, the imaging unit 11402 may be configured to have a pair of imaging elements for acquiring image signals for the right eye and the left eye corresponding to 3D (dimensional) display. 3D display allows the surgeon 11131 to more accurately grasp the depth of the biological tissue at the surgical site. Note that when the imaging unit 11402 is configured as a multi-chip type, multiple lens units 11401 may be provided corresponding to each imaging element.

[0223] Furthermore, the imaging unit 11402 does not necessarily have to be provided in the camera head 11102. For example, the imaging unit 11402 may be provided inside the lens barrel 11101, immediately after the objective lens.

[0224] The driving unit 11403 is configured by an actuator, and moves the zoom lens and focus lens of the lens unit 11401 by a predetermined distance along the optical axis under the control of the camera head control unit 11405. This allows the magnification and focus of the image captured by the imaging unit 11402 to be adjusted appropriately.

[0225] The communication unit 11404 is configured by a communication device for transmitting and receiving various types of information to and from the CCU 11201. The communication unit 11404 transmits the image signal obtained from the imaging unit 11402 to the CCU 11201 via the transmission cable 11400 as RAW data.

[0226] Furthermore, the communication unit 11404 receives a control signal for controlling the driving of the camera head 11102 from the CCU 11201 and supplies the control signal to the camera head control unit 11405. The control signal includes information on the imaging conditions, such as information specifying the frame rate of the captured image, information specifying the exposure value at the time of imaging, and / or information specifying the magnification and focus of the captured image.

[0227] The image capturing conditions such as the frame rate, exposure value, magnification, and focus may be appropriately specified by the user, or may be automatically set by the control unit 11413 of the CCU 11201 based on the acquired image signal. In the latter case, the endoscope 11100 is equipped with so-called AE (Auto Exposure) function, AF (Auto Focus) function, and AWB (Auto White Balance) function.

[0228] The camera head control unit 11405 controls the driving of the camera head 11102 based on a control signal received from the CCU 11201 via the communication unit 11404 .

[0229] The communication unit 11411 is configured by a communication device for transmitting and receiving various information to and from the camera head 11102. The communication unit 11411 receives an image signal transmitted from the camera head 11102 via the transmission cable 11400.

[0230] Furthermore, the communication unit 11411 transmits to the camera head 11102 a control signal for controlling the driving of the camera head 11102. The image signal and the control signal can be transmitted by electrical communication, optical communication, or the like.

[0231] The image processing unit 11412 performs various image processing operations on the image signal, which is RAW data sent from the camera head 11102 .

[0232] The control unit 11413 performs various controls related to the imaging of the surgical site, etc. by the endoscope 11100 and the display of the captured image obtained by imaging the surgical site, etc. For example, the control unit 11413 generates a control signal for controlling the driving of the camera head 11102.

[0233] Furthermore, the control unit 11413 causes the display device 11202 to display a captured image showing the surgical site, etc., based on the image signal that has been image processed by the image processing unit 11412. At this time, the control unit 11413 may recognize various objects in the captured image using various image recognition technologies. For example, the control unit 11413 can recognize surgical tools such as forceps, specific biological parts, bleeding, mist generated when using the energy treatment tool 11112, etc., by detecting the shape and color of the edges of objects included in the captured image. When displaying the captured image on the display device 11202, the control unit 11413 may use the recognition results to superimpose various surgical support information on the image of the surgical site. By superimposing the surgical support information and presenting it to the surgeon 11131, the burden on the surgeon 11131 can be reduced and the surgeon 11131 can proceed with the surgery reliably.

[0234] The transmission cable 11400 connecting the camera head 11102 and the CCU 11201 is an electrical signal cable for communication of electrical signals, an optical fiber for optical communication, or a composite cable of these.

[0235] In the illustrated example, communication is performed by wire using the transmission cable 11400, but communication between the camera head 11102 and the CCU 11201 may also be performed wirelessly.

[0236] The foregoing has described an example of an endoscopic surgery system to which the technology according to the present disclosure can be applied. The technology according to the present disclosure can be applied to the imaging unit 11402 of the camera head 11102 in the configuration described above. Specifically, the solid-state imaging device 1 of FIG. 1 can be applied to the imaging unit 11402. By applying the technology according to the present disclosure to the imaging unit 11402, it is possible to suppress color mixing in the imaging unit 11402, thereby obtaining clearer images of the surgical site, enabling the surgeon to reliably confirm the surgical site.

[0237] Although an endoscopic surgery system has been described as an example here, the technology disclosed herein may also be applied to other systems, such as a microsurgery system.

[0238] Although the embodiments of the present disclosure have been described above, the technical scope of the present disclosure is not limited to the above-described embodiments, and various modifications are possible within the scope of the gist of the present disclosure. Furthermore, components of different embodiments and modifications may be combined as appropriate.

[0239] Furthermore, the effects described in this specification are merely examples and are not limiting, and other effects may also be present.

[0240] The present technology can also be configured as follows. (1) a semiconductor layer in which a plurality of photoelectric conversion units are provided; a plurality of on-chip lenses that allow light to be incident on the corresponding photoelectric conversion units; a first isolation region that isolates the plurality of photoelectric conversion units to which light is incident via the same on-chip lens; a second isolation region that isolates the plurality of photoelectric conversion units to which light is incident via different on-chip lenses; Equipped with The first separation region has a refractive index greater than that of the second separation region. Solid-state imaging device. (2) a color filter having a plurality of colors provided between the semiconductor layer and the on-chip lens; the first isolation region isolates the plurality of photoelectric conversion units to which light is incident via the color filter of the same color; The second separation region separates the plurality of photoelectric conversion units into which light is incident via the color filters of different colors. The solid-state imaging device according to (1) above. (3) The first isolation region that isolates the plurality of photoelectric conversion units to which light is incident via the red color filter has the same refractive index as the semiconductor layer. The solid-state imaging device according to (2) above. (4) The first isolation region and the second isolation region do not penetrate the semiconductor layer. The solid-state imaging device according to any one of (1) to (3) above. (5) the first isolation region does not penetrate the semiconductor layer; The second isolation region penetrates the semiconductor layer. The solid-state imaging device according to any one of (1) to (3) above. (6) The first isolation region and the second isolation region penetrate the semiconductor layer. The solid-state imaging device according to any one of (1) to (3) above. (7) The refractive index of the first separation region at a wavelength of 530 nm is equal to or greater than 2.0 and less than 4.2. The solid-state imaging device according to any one of (1) to (6). (8) The refractive index of the second separation region at a wavelength of 530 nm is 1.0 or more and 1.5 or less. The solid-state imaging device according to any one of (1) to (7). (9) The first isolation region contains the same material as the fixed charge film. The solid-state imaging device according to any one of (1) to (8). (10) an end portion of the first separation region on the light incident side has a refractive index greater than that of the second separation region; The portion of the first separation region other than the end portion on the light incident side has a refractive index smaller than that of the end portion on the light incident side. The solid-state imaging device according to any one of (1) to (9). (11) The depth of the end of the first isolation region on the light incident side is 20 nm or more and 100 nm or less. The solid-state imaging device according to (10) above. (12) The first isolation region has a thickness smaller than that of the second isolation region. The solid-state imaging device according to any one of (1) to (11) above. (13) a semiconductor layer in which a plurality of photoelectric conversion units are provided; a plurality of on-chip lenses that allow light to be incident on the corresponding photoelectric conversion units; a first isolation region that isolates the plurality of photoelectric conversion units to which light is incident via the same on-chip lens; a second isolation region that isolates the plurality of photoelectric conversion units to which light is incident via different on-chip lenses; Equipped with The first isolation region has a solid-state imaging device having a refractive index higher than that of the second isolation region. electronic equipment. (14) a color filter having a plurality of colors provided between the semiconductor layer and the on-chip lens; the first isolation region isolates the plurality of photoelectric conversion units to which light is incident via the color filter of the same color; The second separation region separates the plurality of photoelectric conversion units into which light is incident via the color filters of different colors. The electronic device according to (13) above. (15) The first isolation region that isolates the plurality of photoelectric conversion units to which light is incident via the red color filter has the same refractive index as the semiconductor layer. The electronic device according to (14) above. (16) The first isolation region and the second isolation region do not penetrate the semiconductor layer. The electronic device according to any one of (13) to (15) above. (17) the first isolation region does not penetrate the semiconductor layer; The second isolation region penetrates the semiconductor layer. The electronic device according to any one of (13) to (15) above. (18) The first isolation region and the second isolation region penetrate the semiconductor layer. The electronic device according to any one of (13) to (15) above. (19) The refractive index of the first separation region at a wavelength of 530 nm is equal to or greater than 2.0 and less than 4.2. The electronic device according to any one of (13) to (18). (20) The refractive index of the second separation region at a wavelength of 530 nm is 1.0 or more and 1.5 or less. The electronic device according to any one of (13) to (19) above. (twenty one) The first isolation region contains the same material as the fixed charge film. The electronic device according to any one of (13) to (20) above. (twenty two) an end portion of the first separation region on the light incident side has a refractive index greater than that of the second separation region; The portion of the first separation region other than the end portion on the light incident side has a refractive index smaller than that of the end portion on the light incident side. The electronic device according to any one of (13) to (21) above. (twenty three) The depth of the end of the first isolation region on the light incident side is 20 nm or more and 100 nm or less. The electronic device according to (22) above. (twenty four) The first isolation region has a thickness smaller than that of the second isolation region. The electronic device according to any one of (13) to (23). [Explanation of symbols]

[0241] 1. Solid-state imaging device 10 Pixel array section 11 unit pixel 18 pixel groups 20 Semiconductor layer 21 Photodiode (an example of a photoelectric conversion unit) 22, 22A First isolation region 22a Light incident end 22b Areas other than the ends 23 Second Separation Region 30 Fixed charge membrane 31 First fixed charge film 32 Second fixed charge film 40 Color Filters 40R Red filter (an example of a red color filter) 50 On-chip lens 100 Electronic equipment

Claims

1. a semiconductor layer in which a plurality of photoelectric conversion units are provided; a plurality of on-chip lenses that allow light to be incident on the corresponding photoelectric conversion units; a first isolation region that isolates the plurality of photoelectric conversion units to which light is incident via the same on-chip lens; a second isolation region that isolates the plurality of photoelectric conversion units to which light is incident via different on-chip lenses; a fixed charge film provided on a light incident surface and a side surface of the photoelectric conversion unit; a dielectric film that is in contact with the light incident surface of the fixed charge film, is provided integrally with the second separation region, has a refractive index smaller than that of the first separation region, and has voids in a portion of the portion that is provided integrally with the second separation region; Equipped with The first separation region has a refractive index greater than that of the second separation region. Solid-state imaging device.

2. The fixed charge film contains at least one of hafnium oxide, aluminum oxide, tantalum oxide, zirconium oxide, titanium oxide, magnesium oxide, and lanthanum oxide. The solid-state imaging device according to claim 1 .

3. a color filter having a plurality of colors provided between the semiconductor layer and the on-chip lens; the first isolation region isolates the plurality of photoelectric conversion units to which light is incident via the color filters of the same color; The second isolation region isolates the plurality of photoelectric conversion units to which light is incident via the color filters of different colors.

3. The solid-state imaging device according to claim 1.

4. The first isolation region that isolates the plurality of photoelectric conversion units to which light is incident via the red color filter has the same refractive index as the semiconductor layer. The solid-state imaging device according to claim 3 .

5. The first isolation region and the second isolation region do not penetrate the semiconductor layer.

5. The solid-state imaging device according to claim 1.

6. the first isolation region does not penetrate the semiconductor layer; The second isolation region penetrates the semiconductor layer.

5. The solid-state imaging device according to claim 1.

7. The first isolation region and the second isolation region penetrate the semiconductor layer.

5. The solid-state imaging device according to claim 1.

8. The refractive index of the first separation region at a wavelength of 530 nm is equal to or greater than 2.0 and less than 4.

2.

8. The solid-state imaging device according to claim 1.

9. The refractive index of the second separation region at a wavelength of 530 nm is 1.0 or more and 1.5 or less.

9. The solid-state imaging device according to claim 1.

10. The first isolation region contains the same material as the fixed charge film.

10. The solid-state imaging device according to claim 1.

11. an end portion of the first separation region on a light incident side has a refractive index greater than that of the second separation region; The refractive index of the portion of the first separation region other than the end portion on the light incident side is smaller than that of the end portion on the light incident side.

11. The solid-state imaging device according to claim 1.

12. The depth of the end of the first isolation region on the light incident side is 20 nm or more and 100 nm or less. The solid-state imaging device according to claim 11.

13. The first isolation region has a thickness smaller than that of the second isolation region.

13. The solid-state imaging device according to claim 1.

14. a semiconductor layer in which a plurality of photoelectric conversion units are provided; a plurality of on-chip lenses that allow light to be incident on the corresponding photoelectric conversion units; a first isolation region that isolates the plurality of photoelectric conversion units to which light is incident via the same on-chip lens; a second isolation region that isolates the plurality of photoelectric conversion units to which light is incident via different on-chip lenses; a fixed charge film provided on a light incident surface and a side surface of the photoelectric conversion unit; a dielectric film that is in contact with the light incident surface of the fixed charge film, is provided integrally with the second separation region, has a refractive index smaller than that of the first separation region, and has voids in a portion of the portion that is provided integrally with the second separation region; Equipped with The first isolation region has a solid-state imaging device having a refractive index greater than that of the second isolation region. electronic equipment.

Images