Devices and Optical Switches

Abstract

To provide improved electro-optical devices such as phase shifters and switches.SOLUTION: A photonic device is disclosed, comprising a first cladding layer, a first electrical contact comprising a first lead coupled to a first dielectric portion, a second electrical contact comprising a second lead coupled to a second dielectric portion, a waveguide structure comprising a slab layer containing a first material, and a second cladding layer. The slab layer may be coupled to the first dielectric portion of the first electrical contact and the second dielectric portion of the second electrical contact. The first dielectric portion and the second dielectric portion may have a dielectric constant greater than a dielectric constant of the first material.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] Priority claim This application is incorporated herein by reference in its entirety. gh Efficiency Photonic Phase Shifter”, 20 This application claims priority to the application filed on January 29, 2020, and the entire application is sufficient to No. 6,023,799, filed Dec. 16, 2003, which is incorporated herein by reference as if fully set forth herein.

[0002] FIELD OF THE INVENTION Embodiments herein relate generally to electro-optical devices such as phase shifters and switches. [Background technology]

[0003] Electro-optic (EO) modulators and switches are used in the optical field. Modulators utilize free-carrier electrorefraction, free-carrier electroabsorption, or the DC Kerr effect. to modify the optical properties during operation, e.g., of light propagating through an EO modulator or switch. By way of example, optical phase modulators are used in integrated optical systems, waveguide structures, and and in integrated optoelectronics. Summary of the Invention [Problem to be solved by the invention]

[0004] Despite advances in the field of EO modulators and switches, the art remains devoid of EO modulators. Improvements to methods and systems relating to modulators and switches are needed. [Means for solving the problem]

[0005] Some embodiments described herein involve photonic devices such as electro-optic switches and phase shifters. The photonic device comprises a first cladding layer and a first a first electrical contact having a first conductor coupled to the dielectric portion; a second electrical contact having a second conductive wire connected to the first material; and a waveguide having a slab layer including the first material. The slab layer may include a first cladding layer and a second cladding layer. The dielectric portion and the second electrical contact may be coupled to the second dielectric portion.

[0006] The first dielectric portion and the second dielectric portion are The first dielectric portion may have a dielectric constant greater than the dielectric constant of the first material in the separating direction. The dielectric constant of the first material and the second dielectric portion is greater than the dielectric constant of the first material at the first temperature. The first temperature may be greater than 1 mK, less than 77 K, less than 150 K, and / or in another temperature range. In some embodiments, the first material is a first cladding layer and a second cladding layer. The cladding layer is a transparent material having a refractive index greater than that of the cladding layer. In the embodiment, the relative dielectric constants of the first and second dielectric portions and the relative dielectric constant of the first material are The ratio between the dielectric constant and the dielectric constant is 2 or greater.

[0007] The waveguide structure can include a first raised portion, the first raised portion comprising a first material. The bump is coupled to the slab layer and disposed between the first electrical contact and the second electrical contact. The portion may be disposed on the first side of the slab layer and extend into the first cladding layer, The dielectric portion and the second dielectric portion are formed on the first portion of the slab layer abutting the raised portion of the waveguide structure. The slab layer may be bonded to the slab layer at the side.

[0008] In other embodiments, the raised portion is disposed on the first side of the slab layer and the first cladding the first dielectric portion and the second dielectric portion extend into the slab opposite the first side; In some embodiments, the first electrical contact and the second electrical contact are bonded to the slab layer on the second side of the layer. Two electrical contacts are disposed on a second side of the slab layer.

[0009] In some embodiments, the first electrical contact is from the second side of the slab layer to the first side of the slab layer. the second electrical contact is coupled to the first dielectric portion by penetrating the slab layer to the second side of the slab layer. The point is formed by penetrating the slab layer from the second side of the slab layer to the first side of the slab layer. , coupled to the second dielectric portion.

[0010] In some embodiments, the first dielectric portion and the second dielectric portion are made of strontium titanate. Strontium (STO), barium strontium titanate (BST), hafnium oxide, Zirconium oxide, titanium oxide, graphene oxide, tantalum oxide, lead zirconium titanate (PZT), lead lanthanum zirconium titanate (PLZT), or strontium niobate It consists of one of the subunits, the SBN.

[0011] In some embodiments, the first material is barium titanate (BTO), barium titanate (BTO), or Bistum Strontium (BST), Lithium Niobate, Lead Zirconium Titanate (PZT) , lead lanthanum zirconium titanate (PLZT), aluminum oxide, aluminum nitride , or strontium barium niobate (SBN).

[0012] This summary is intended to provide a brief overview of some of the subject matter discussed herein. Accordingly, the above features are merely examples and in no way limit the scope or spirit of the subject matter described herein. It is understood that this should not be construed to narrow the scope of the subject matter described herein. Features, aspects, and advantages will become apparent from the following detailed description, drawings, and claims. There will be.

[0013] For a better understanding of the various embodiments described, the following detailed description, taken in conjunction with the following drawings, is provided: In the drawings, like reference numbers refer to corresponding parts throughout the drawings. Refers to... [Brief explanation of the drawings]

[0014] [Figure 1] 1 is a simplified diagram illustrating an optical switch according to some embodiments. [Figure 2] 1 is a simplified diagram illustrating a cross section of a waveguide structure incorporating high-κ electrodes, where the high-κ electrodes are placed opposite a waveguide ridge, according to some embodiments. [Figure 3] FIG. 1 is a simplified diagram showing a cross section of a waveguide structure incorporating high-κ electrodes, according to some embodiments, where the high-κ electrodes are placed opposite a waveguide ridge and have a conducting wire passing through them. [Figure 4] FIG. 1 is a simplified diagram illustrating a cross section of a waveguide structure incorporating a high-κ electrode, where the high-κ electrode is located on the same side as a waveguide ridge, according to some embodiments. [Figure 5] 1 is a simplified diagram illustrating a cross section of a waveguide structure, according to some embodiments, the waveguide structure incorporating high-κ electrodes and exhibiting a sandwich structure. [Figure 6] 1 is a simplified diagram illustrating a cross section of a vertical waveguide structure, according to some embodiments, the waveguide structure incorporating a high-κ material. [Figure 7] 1 is a simplified diagram illustrating a cross section of a waveguide structure, according to some embodiments, where a dielectric portion is in series with the waveguide structure. [Figure 8]1 is a simplified diagram illustrating a cross section of a waveguide structure, according to some embodiments, where the dielectric portion exhibits a ridge-like profile. [Figure 9] FIG. 1 is a simplified diagram illustrating a top view of a waveguide structure according to some embodiments. [Figure 10] FIG. 1 illustrates a user interfacing with a hybrid quantum computing device, according to some embodiments. [Figure 11] 1 is a simplified diagram illustrating a cross section of a waveguide structure showing the direction of the induced electric field according to some embodiments. DETAILED DESCRIPTION OF THE INVENTION

[0015] While the features described herein may be susceptible to various modifications and alternative forms, the present invention is not limited to the specific implementation. Embodiments are illustrated by way of example in the drawings and will be described in detail herein. The detailed description is not intended to limit the particular forms disclosed, but to the contrary, the appended claims All modifications, equivalents, and alternatives falling within the spirit and scope of the subject matter defined by the scope of the It should be understood that the invention is intended to include forms.

[0016] Reference will now be made in detail to the embodiments, examples of which are illustrated in the accompanying drawings. In the detailed description, numerous specific details are set forth in order to provide a thorough understanding of the various embodiments described. However, various embodiments described may not necessarily provide these specific details. It will be apparent to those skilled in the art that the present invention may be implemented without further elaboration. The order, components, circuits, and networks are not intended to unnecessarily obscure aspects of the embodiments. , but not explained in detail.

[0017] The above description has been set forth with reference to specific embodiments for purposes of explanation. The illustrative description is not intended to be exhaustive or to encompass the scope of the claims in their precise form as disclosed. Not intended to be limiting. Many modifications and variations are possible in light of the above teachings. The embodiments best explain the principles underlying the claims and their practical applications. The invention has been selected to clarify the principles of the invention so that one skilled in the art can easily design the appropriate configuration for the particular use envisaged. It is possible to best use the embodiments with various modifications.

[0018] FIELD OF THE INVENTION Embodiments of the present invention relate to optical systems. More particularly, embodiments of the present invention relate to dynamic To reduce power consumption during operation, high dielectric constant materials (i.e., As used herein, "high-k materials" refers to materials that are suitable for use in optical modulators or switches. In particular, the material used to construct the waveguides is Please note that this is intended to refer to a material that has a high dielectric constant compared to the material being measured. By way of example only, embodiments of the present invention may be implemented in integrated optical systems that include active optical devices. Although provided in the context, the present invention is not limited to this example and may be used in various optical systems and optoelectronic devices. It has a wide range of applications for electronic systems.

[0019] According to some embodiments, the active photonic devices described herein are Free carrier induced refractive index in semiconductors to achieve signal modulation and / or switching. The electro-optical effects such as the fluctuation of the electric field, the Pockels effect and / or the DC Kerr effect are utilized. Therefore, embodiments of the present invention may be a modulator in which transmitted light is modulated on or off, or a modulator in which light is transmitted The modulator modulates the transmitted light by a partial change in the refractive index, and the transmitted light is output to a first output (e.g., a an optical switch with an output on a first output (e.g., a waveguide) or a second output (e.g., a waveguide), or three or more The present invention is therefore applicable to optical switches having two or more inputs and two or more outputs. Embodiments include an M(input) x N(output) system utilizing the methods, devices and techniques described herein. It is applicable to a variety of designs, including power systems.

[0020] FIG. 1 is a simplified diagram illustrating an optical switch according to one embodiment of the present invention. , switch 100 has two inputs, input 1 and input 2, and two outputs, output 1 and output 2. and output 2. By way of example, the inputs and outputs of switch 100 may be single-mode or multi-mode. The optical waveguide may be implemented as an optical waveguide operable to support a beam of light. The switch 100 is integrated with a set of 50 / 50 beam splitters 105 and 107. As shown in FIG. 1, the input 1 and the input 2 are connected to each other. Input 2 is a first 50 / 60 GHz coupler, also called a directional coupler, that receives light from input 1 or input 2. 50 / 50 beam splitter 105 and optically coupled to the Through evanescent coupling, 50% of the input light from input 1 is guided into waveguide 110, and the input 50% of the input light from source 1 is guided into waveguide 112. At the same time, the first 50 / 50 beam The splitter 105 guides 50% of the input light from input 2 to the waveguide 110, 50% of the input light from input 1 is guided to waveguide 112. Considering only the input light from input 1, The input light is split evenly between waveguides 110 and 112 .

[0021] The Mach-Zehnder interferometer 120 includes a phase adjustment unit 122. The voltage V0 is The phase adjusting section 122 may have a refractive index that can be controllably changed. The light in the waveguides 110 and 112 is divided into a first 50 / 50 beam After propagating through the splitter 105, the light still has a well-defined phase relationship (e.g. For example, the light is in phase, or is out of phase by 180°, so the position in the phase adjustment unit 112 The phase adjustment can introduce a predetermined phase difference between the light propagating in the waveguides 130 and 132. As will be apparent to those skilled in the art, the phase relationship between the light propagating in waveguides 130 and 132 is The output light present at output 1 (e.g., the light beams are in phase) or the light present at output 2 (e.g., For example, the light beams can be out of phase), which allows the phase adjustment The switching current when light is directed to output 1 or output 2 as a function of the voltage V0 applied at 122. A single active arm is shown in Figure 1, but a Mach-Zehnder interferometer It will be appreciated that both arms of the amplifier may include a phase adjustment portion.

[0022] As shown in Figure 1, electro-optical switching technology is superior to all other optical switching technologies in that it is optically The electrical bias of the switch (e.g., , V0 in FIG. 1). The electric field and / or or an electric current causes a change in one or more optical properties of the active region, such as refractive index or absorbance. Glass.

[0023] An implementation of a Mach-Zehnder interferometer is shown in FIG. 1, and embodiments of the present invention are not limited to this particular The switch configuration is not limited to the above, but also includes ring resonator designs, Mach-Zehnder modulators, and general-purpose Mach-Zehnder modulators. Other phase adjustment devices are within the scope of the present invention, including Har-Zehnder modulators and the like. One of ordinary skill in the art will recognize many variations, modifications, and variations.

[0024] In some embodiments, the optical phase shifter devices described herein may be hybrid optical phase shifters as shown in FIG. Quantum computing systems, such as lid quantum computing systems, Alternatively, these optical phase shifter devices may be used in other types of optical systems. For example, other computing, communication and / or technology systems may be included within a system or network. Photonic phase shifter that directs an optical signal (e.g., a single photon or continuous wave (CW) optical signal) to can be utilized, and the phase shifter configurations described herein can be used in various embodiments within these systems. It can be used.

[0025] Figures 2 to 8 - Cross-section of photonic phase shifter 2-8 are simplified diagrams illustrating various configurations of photonic phase shifters according to various embodiments. The configurations shown in FIGS. 2 to 8 are schematic views and are not necessarily drawn to scale. The configurations shown in Figures 2-8 have several important design features: Although they differ, they also share some characteristics, such as As will be apparent, each of Figures 2-8 shows two electrical contacts, each of which is connected to a dielectric Electrodes (240, 340, 440, 540, 640, 740, and 840, and 242, 342, 442, 542, 642, 742, and 842) are connected to the conductors (230, 3 30, 430, 530, 630, 730, and 830, as well as 232, 332, 432, In some embodiments, the conductive wires include metal , or alternatively may be constructed from semiconductor materials.

[0026] The dielectric electrode is configured to extend in close proximity to the location of the optical mode of the waveguide, Photonic phase shifters change the accumulated phase of photonic modes traveling through a waveguide. To achieve this, a controllable voltage difference can be introduced across the two dielectric electrodes. For example, the dielectric electrodes may be coupled via electrical leads to a voltage source that applies a controllable voltage difference.

[0027] Importantly, the dielectric electrodes are preferably made of a material that is thicker than the material of the waveguide and / or slab layers. To have a large dielectric constant, it may be constructed from a high-κ material having a large dielectric constant. The κ used in the fine print refers to the real component of the dielectric constant, κ = Re(ε r )=Re(ε / ε0), and ε r is the complex-valued relative permittivity and ε is the absolute dielectric constant of the material. is the dielectric constant, and ε is the dielectric constant of free space. For clarity, the imaginary component ε r is the material It is noted that the real component κ is related to the dielectric polarization of the material, while it is related to the electrical conductivity. sea ​​bream.

[0028] The dielectric constant of a material is different in the presence of a direct current (DC) voltage compared to an AC voltage. The dielectric constant of a material under AC voltage can have a value of κ(ω) as a function of frequency. Thus, in some embodiments, the dielectric electrodes, slab layers and / or raised conductive layers may be When selecting a material for the waveguide, the dielectric constant of the material must be selected at the operating frequency of the photonic phase shifter. It can be considered.

[0029] The dielectric electrode is oriented in a direction separating the first dielectric portion and the second dielectric portion (for example, as shown in FIGS. 2 to 3). 5 and 7-8, or the y direction in FIG. 6), from the first material of the slab layer. For example, in an anisotropic medium, the dielectric constant of the Sol ε can be expressed by the following matrix relating the electric field E to the electric displacement D:

[0030]

number

[0031] In the formula, component ε xx , ε xy etc. denote the individual components of the permittivity tensor. In this state, the material of the first dielectric electrode and the second dielectric electrode is The diagonal elements of the obtained permittivity tensor are the permittivity tensors of the materials of the slab layers and / or the waveguide structure. may be chosen to be larger than the corresponding diagonal elements of sol.

[0032] [Table 1]

[0033] Table 1 shows the χ for various materials. (3) The values ​​of the refractive index and dielectric constant are shown in Table 1. Thus, in some embodiments, STO has a very high dielectric constant at temperatures below 10 K. For this reason, STO may be a desirable material for use in the dielectric electrode, while BT O may be used in the slab layer and / or the raised portion of the waveguide.

[0034] As shown, the configurations shown in each of FIGS. 2-8 include a first cladding layer and a second cladding layer. 2 cladding layers. The areas marked 10, 410, 510, 610, 710 and 810 are on one side of the waveguide. 212, 312, 412, 512, represent the first cladding layer on the side of the The areas marked 612, 712 and 812 are the second waveguides on the other side. The terms "first" and "second" simply refer to the two cladding layers. For example, the term "first cladding layer" refers to any cladding layer of a waveguide. Note that this can refer to cladding layers on either side. The refractive index of the first cladding layer and the second cladding layer is set to be equal to the refractive index of the waveguide structure. Lower is better.

[0035] 2 to 8 show the first dielectric portion (240, 340, 440, 540, 640, 740) and 840) are connected to the first conductive wires (230, 330, 430, 530, 630, 73 0 and 830), and a second dielectric portion (242, 342, 442 , 542, 642, 742 and 842) are connected to the second conductors (232, 332, 43 2, 532, 632, 732 and 832). The second conductor may be made of a conductive material such as a metal, or alternatively may be made of a semiconductor material. In various embodiments, the first dielectric portion and the second dielectric portion may be made of titanium dioxide. Strontium (STO), barium titanate (BTO), barium strontium titanate (BST), hafnium oxide, lithium niobate, zirconium oxide, titanium oxide, oxide Graphene oxide, tantalum oxide, lead zirconium titanate (PZT), lead lanthanum titanate Zirconium (PLZT), strontium barium niobate (SBN), aluminum oxide The material may be one or more of a doped variant or solid solution thereof.

[0036] 2-8 show slab layers (220, 320, 420 and 520, 65) containing a first material. 1, 754, and 851), the slab layer being a first electrical contact. and the second dielectric portion of the second electrical contact. In the figure, the waveguide structure further includes raised portions (251, 351, 451, and 551), and the raised portions The raised portions (251, 351, 451 and 551) are made of a first material (or a different material, e.g. , silicon nitride, or any other material) and bonded to the slab layer, is disposed between the first electrical contact and the second electrical contact. The materials are strontium titanate (STO), barium titanate (BTO), and barium titanate. Lithium strontium (BST), hafnium oxide, lithium niobate, zirconium oxide Titanium oxide, graphene oxide, tantalum oxide, lead zirconium titanate (PZT), Lead lanthanum zirconium titanate (PLZT), strontium barium niobate (SB N), aluminum oxide, or one of their doped variants or solid solutions. .

[0037] In some embodiments, the second material comprising the first dielectric portion and the second dielectric portion The material may be selected based on the first material that constitutes the slab layer and / or the waveguide structure. For example, the second material may have a dielectric constant greater than the dielectric constant of the first material. As an example, if the first material is BTO, the second material may be STO. The STO can be chosen to be the polar At low temperatures (e.g., 4K), it has a higher dielectric constant than BTO. The large dielectric constant of the body electrode allows for a given allowable loss from the waveguide to the electrode compared to the metal electrode. This allows the dielectric electrodes to be placed closer to the waveguide at the expense of a more acceptable level of loss. For example, a highly conductive metal electrode can reduce the absorption of a dielectric electrode at the same distance from the waveguide. This results in a greater photon absorption (i.e., loss) from the waveguide compared to The dielectric electrodes can be placed closer to the waveguide than the metal electrodes for a given loss tolerance. The high dielectric constant of the dielectric electrode corresponds to the high polarizability of the dielectric material. Optical properties provide an energy-efficient control mechanism for tailoring the electric field within the waveguide structure. It will be.

[0038] In some embodiments, the materials used for the dielectric electrodes and the waveguide structure are: These may be selected based on the effective dielectric constant of the material (or the dielectric constant of anisotropic material). The dielectric constant tensor is an intrinsic material property, while the effective dielectric constant of a structure is the It is proportional to the dielectric constant, but also depends on the shape and dimensions of the structure. The materials used for the first and second dielectric parts are The effective relative dielectric constant of the second dielectric portion is selected to be greater than the effective relative dielectric constant of the waveguide structure. possible.

[0039] In some embodiments, a cryogenic device, such as the cryostat 1113 shown in FIG. the first electrical contact, the second electrical contact, and the waveguide structure at a cryogenic temperature, for example, 77 Kelvin It may be configured to maintain:

[0040] In some embodiments, the first electrical contact and the second electrical contact are located at one end of the waveguide structure. configured to generate an electric field along one or more directions, e.g., along the x-direction, The waveguide structure has an electro-optic coefficient (e.g., χ (2) , Pockels coefficient, or χ (3) ,car coefficients) have non-zero values ​​aligned along the electric field direction. For example, The conductors are connected to a power supply that applies a controllable (e.g., programmable) voltage difference, as shown in FIG. Additionally or alternatively, the waveguide structure may be coupled to a pressure source, thereby generating an electric field within the waveguide structure. , the guided modes supported by the waveguide structure may have polarization directions aligned in the x-direction. do.

[0041] In some embodiments, the first dielectric portion and the second dielectric portion are the same as the slab layer. A second planar layer is configured adjacent to the first side of the slab layer. The first and second dielectric portions may be formed by deposition (e.g., epitaxy, metalorganic vapor phase growth of slab layers (using alternative methods such as molecular beam epitaxy, physical vapor deposition, sol-gel, etc.) The first and second dielectric layers are grown on one side of the slab layer, and the first and second dielectric layers are directly bonded to the slab layer. Alternatively, in some embodiments, the intermediate layer may be a slab layer, a first dielectric layer, and a and a second dielectric layer, and the slab layer and the first dielectric layer and the second dielectric layer are disposed between the slab layer and the first dielectric layer and the second dielectric layer. In some embodiments, the intervening layer may be comprised of an oxide material.

[0042] The first dielectric portion and the second dielectric portion are separated by a gap region, e.g., gap region 243 or 3 43. In some embodiments, the gap area is etched, In some embodiments, the first dielectric portion and the second dielectric portion may be filled with a cladding material. Both the dielectric portions are grown as a single second layer on the slab layer, and then one area is etched. The first dielectric portion and the second dielectric portion can be separated by etching. The etched areas may be filled with cladding material. Alternatively, the etched areas may be , or may be left empty (i.e., filled with air or vacuum).

[0043] In some embodiments, the first dielectric portion and the second dielectric portion are a dielectric constant greater than that of the first material in a direction separating the first and second dielectric portions; The dielectric constants of the first and second dielectric portions are conductive at a first temperature. The first temperature may be greater than the relative dielectric constant of the waveguide structure, and the first temperature may be greater than 1 mK and less than 77 K, 0 K and / or within another temperature range. In some embodiments, the first material is The first cladding layer and the second cladding layer have a refractive index greater than that of the second cladding layer. In some embodiments, the first dielectric portion and the second dielectric portion The ratio between the dielectric constant of the first material and the dielectric constant of the second material is 2 or greater.

[0044] The following paragraphs describe various design features that differ between the configurations shown in FIGS.

[0045] FIG. 2 shows that the raised portion of the waveguide structure (251) is disposed at the bottom of the slab layer and The structure shown extends into the cladding layer (210). The combination with the slab layer has a first thickness (260) greater than the second thickness (260) of the slab layer (220) alone. a thickness (262) of the first thickness relative to the second thickness, the excess of which is on the bottom side of the slab layer; The first dielectric portion (24) extends into the cladding layer (210). 0) and a second dielectric portion (242) are attached to the slab layer (2) on the top side of the slab layer opposite the bottom side. 20). Furthermore, the first electrical contact (230) and the second electrical contact (232) are , disposed above the slab layer (220). The terms "top" and "bottom" are used for clarity. , are used with reference to the perspective views shown and do not necessarily represent any particular orientation relative to the overall device. Please note that this does not refer to the

[0046] FIG. 3 shows a raised portion of the waveguide structure (351) disposed above the slab layer and The cladding layer (312) extends into the first dielectric portion and the second dielectric portion. 1 illustrates a configuration in which the raised portion is bonded to the slab layer on the bottom side of the slab layer opposite the raised portion. and the slab layer have a second thickness (360) greater than that of the slab layer (320) alone. It has a first thickness (362), and the excess of the first thickness relative to the second thickness is the slab layer (3 20) and extends into the first cladding layer (312). The first dielectric portion (340) and the second dielectric portion (342) are formed on opposite sides of the upper slab. The bottom side of the layer is bonded to the slab layer (320). Additionally, a first electrical contact (330) is bonded to the slab layer (320). The first slab layer (320) is formed by penetrating the slab layer (320) from the top side of the slab layer to the bottom side of the slab layer. The second electrical contact (332) is coupled to the dielectric portion (340) and is slab-bonded from the top side of the slab layer. The second dielectric portion (34) is formed by penetrating the slab layer (320) to the bottom side of the slab layer. 2).

[0047] FIG. 4 shows that the combination of the slab layer and the raised portion of the waveguide structure (451) is 0) has a first thickness (462) greater than a second thickness (460) A first thickness of excess is disposed in the first cladding layer (412) on the upper side of the slab layer. As shown in FIG. 4, the first dielectric portion (440) and the second dielectric portion (441) are The portion (442) is bonded to the first material (420) on the top side of the slab layer. The dielectric portion (440) and the second dielectric portion (442) are formed on the ridge of the waveguide structure (451). It contacts the raised part.

[0048] FIG. 5 shows a waveguide structure comprising a first strip waveguide section (554) and a second strip waveguide section ( 556), wherein the first and second strip waveguide portions are made of a second material and The slab layer (520) is made of a third material and is connected to the first strip waveguide portion (55). 4) and the second strip waveguide section (556). The first and second strip waveguide sections may be constructed from the same or different materials. The first and second strip waveguide portions are individually made of silicon nitride (SiN 4), silicon dioxide (SiO2), aluminum oxide (Al2O3), or other similar materials It may consist of:

[0049] FIG. 6 shows a vertical waveguide configuration, where the first dielectric portion (642) is located above the slab layer. The second dielectric portion (640) is bonded to the slab layer (651) opposite the upper slab layer. The bottom side of the first dielectric portion and the second dielectric portion are bonded to the slab layer (651). The dielectric portion is oriented in the guiding direction such that the electric field induced in the waveguide structure is directed along the y direction. Bonded to the top and bottom sides of the waveguide structure.

[0050] FIG. 7 shows a waveguide configuration, with a first dielectric portion (740) and a second dielectric portion (74 2) are arranged in series with the waveguide structure (754). Each of the dielectric portion, the second dielectric portion and the waveguide structure has a single width. It is arranged in one layer.

[0051] FIG. 8 shows a waveguide configuration, with a first dielectric portion (840) and a second dielectric portion (84 2) shares a raised profile with the waveguide structure (851), the raised profile being For example, the first dielectric portion (840) extends into the first bonding layer (812). A raised portion (84) having a thickness (862) greater than the thickness (860) of the remainder of the dielectric portion. 4), and the second dielectric portion (842) may include a thickness equal to the remaining thickness of the second dielectric portion. (860)。 (862) may include a raised portion (846) having a thickness (862) greater than (860). Furthermore, the raised portions of the first dielectric portion and the second dielectric portion form a waveguide structure (851). It can have a thickness equal to

[0052] Figure 9 - Top-to-bottom view of a photonic phase shifter FIG. 9 is a top-down view of a photonic phase shifter configuration according to some embodiments. As shown, the phase shifter includes a first conductor (930), a second conductor (932), and a first inductor (934). A dielectric portion (940), a second dielectric portion (942), a slab layer (920), and a waveguide and a raised portion of the structure (951).

[0053] Figure 10 - Hybrid quantum computing system FIG. 10 is a simplified system diagram showing a cryostat according to some embodiments. Incorporating electro-optical switches into a hybrid quantum computing system To operate at low temperatures, e.g., liquid helium temperatures, embodiments of the present invention The electro-optical switches described herein are integrated into a system that includes a cooling system. Therefore, embodiments of the present invention may be embodied in a hybrid computing system, such as that shown in FIG. To provide an optical phase shifter that can be used in a hybrid computing system. The system 1101 is connected to the hybrid quantum computing (QC) subsystem 1105. A user interface device 1103 is communicatively coupled to the The interface device 1103 may be any kind of user interface device. The device may be, for example, a terminal including a display, keyboard, mouse, touch screen, etc. Furthermore, the user interface device itself is a personal computer (PC). It can be a computer, laptop, tablet computer, etc. In this embodiment, the user interface device 1103 allows the user to Provides an interface by which the user can interact with the subsystem 1105. For example, The Interface Device 1103 is a text editor, an interactive development environment (IDE), Run software such as command prompts and graphical user interfaces. The Q algorithm can be run by a user, allowing the user to run one or more quantum algorithms. Allows you to program the C subsystem or interact with the QC subsystem. In an embodiment, the QC subsystem 1105 can be pre-programmed and user-interfaced. The interface device 1103 simply allows the user to start quantum computations, monitor progress, and It can be an interface that can receive results from the hybrid QC subsystem 1105. The hybrid QC subsystem 1105 includes one or more quantum computing chips. The system further includes a conventional computing system 1107 coupled to a processor 1109. In some examples, conventional computing systems1107 and quantum computing systems The laser chip 1109 may contain other electronic components 1111, such as a pulsed pump laser. , may be coupled to microwave oscillators, power supplies, networking hardware, etc.

[0054] In some embodiments, quantum computing systems utilizing cryogenic operation include: 109 may be housed in a cryostat, for example, cryostat 1113. In some embodiments, the quantum computing chip 1109 comprises one or more Chips, such as hybrid electronic chips 1115 and integrated photonic chips 11 Signals may be transmitted on-chip and off-chip in any manner, e.g., optical interconnects. 1119 and other electronic interconnects 1121.

[0055] Figure 11 - Electric field induced in a photonic phase shifter FIG. 11 is a simplified diagram illustrating a cross section of the waveguide structure shown in FIG. 2, according to some embodiments. The direction of the induced electric field is indicated by the arrow. The electric field direction is generally in a well-defined x-direction through the dielectric portion of the device. The electric field is convexly curved both above and below the dielectric part, as shown. Furthermore, the large arrow (1150) pointing in the clear x-direction is The polarization directions of the optical modes that can propagate are shown.

[0056] In some embodiments, the first dielectric portion, the second dielectric portion, and the waveguide structure include: The waveguide structure is disposed in a single layer having a first thickness, and includes a first dielectric portion and a second dielectric portion. For example, see FIG. 7.

[0057] In some embodiments, the first dielectric portion and the second dielectric portion each comprise a first The first thickness of the slab structure of the dielectric portion and the second dielectric portion is greater than the second thickness. Each of the raised structures has a first thickness that is the same as the thickness of the waveguide structure. In these embodiments, the waveguide structure is formed between the first dielectric portion and the second dielectric portion. and coupled to the raised structures of the first and second dielectric portions. See Figure 8.

[0058] Additionally, the examples and embodiments described herein are for illustrative purposes only and should not be construed as limiting the scope of the invention. Various modifications and variations will be suggested to those skilled in the art and will be within the spirit and scope of the present application and the appended claims. It will be understood that the invention is within the scope of the present invention.

Claims

1. A device, the device comprising: a first dielectric electrode; a second dielectric electrode separated from the first dielectric electrode by a gap region; a waveguide structure electrically connected to the first dielectric electrode and the second dielectric electrode; the first dielectric electrode and the second dielectric electrode are capable of applying a controlled electric field within the waveguide structure; the waveguide structure comprises a material having a first dielectric constant in one direction; the first dielectric electrode and the second dielectric electrode have a second dielectric constant in the one direction that is greater than the first dielectric constant in the one direction; The device, wherein the first dielectric electrode and the second dielectric electrode are spaced apart in the one direction.

2. A device as described in claim 1, wherein in the one direction, the diagonal components of the dielectric tensor between the first dielectric electrode and the second dielectric electrode are larger than the diagonal components of the dielectric tensor of the waveguide structure.

3. the first dielectric electrode, the second dielectric electrode, and the waveguide structure are disposed in a single layer having a first width; 3. The device of claim 1 or claim 2, wherein the waveguide structure is disposed between the first and second dielectric electrodes within the single layer.

4. the first dielectric electrode comprises a first raised portion having a first thickness greater than a second thickness of a remainder of the first dielectric electrode; the second dielectric electrode includes a second raised portion having the first thickness, and a remainder of the second dielectric electrode has the second thickness; 3. The device of claim 1 or claim 2, wherein the waveguide structure has the first thickness.

5. The device of claim 1 or claim 2, wherein the waveguide structure comprises a ridge portion and a slab layer.

6. the raised portion is disposed on a first side of the slab layer; The device of claim 5 , wherein the first dielectric electrode and the second dielectric electrode are coupled to the slab layer on a second side of the slab layer opposite the first side.

7. The device of claim 5 , wherein the slab layer is composed of a different material than the raised portion.

8. the slab layer is made of barium titanate; The device of claim 5 , wherein the raised portion is composed of silicon nitride.

9. The device of claim 5 , wherein the raised portion is constructed from the material.

10. the raised portion is disposed on a first side of the slab layer; The device of claim 5 , wherein the first dielectric electrode and the second dielectric electrode are coupled to the slab layer on the first side of the slab layer.

11. the raised portion is disposed on a first side of the slab layer; The device of claim 5 , wherein the first dielectric electrode and the second dielectric electrode are coupled to the slab layer on a second side of the slab layer opposite the first side.

12. a first electrical contact comprising the first dielectric electrode; a second electrical contact comprising the first dielectric electrode; and The device of claim 11 further comprising:

13. the first electrical contact couples to the first dielectric electrode by penetrating the slab layer from the second side of the slab layer to the first side of the slab layer; 13. The device of claim 12, wherein the second electrical contact couples to the second dielectric electrode by penetrating the slab layer from the second side of the slab layer to the first side of the slab layer.

14. the first dielectric electrode and the second dielectric electrode are made of strontium titanate; The device of claim 12 wherein the waveguide structure is constructed from barium titanate.

15. the waveguide structure further comprises a slab layer, a first strip waveguide section, and a second strip waveguide section; the first and second strip waveguide portions are constructed from a second and a third material, respectively; 3. The device of claim 1 or claim 2, wherein the slab layer is disposed between the first and second strip waveguide portions.

16. 16. The device of claim 15, wherein the second material and the third material are silicon nitride.

17. A waveguide structure comprising: a cladding layer disposed to cover the first dielectric electrode, the second dielectric electrode, and the waveguide structure; The device of claim 12 , wherein the material has a refractive index greater than the refractive index of the cladding layer.

18. 13. The device of claim 12, wherein in the one direction, a ratio of the second dielectric constant of the first and second dielectric electrodes to the first dielectric constant of the material is 2 or greater.

19. The device described in claim 12, wherein the one direction includes a parallel direction that is parallel to the surface of the slab layer.

20. An optical switch, comprising: an input port for coupling light into the optical switch; a Mach-Zehnder interferometer comprising a first arm, a second arm, and a phase shifter that applies a phase shift to the light in the second arm to form a phase-shifted light; one or more output ports; the phase shifter comprising a first dielectric electrode and a second dielectric electrode, the second dielectric electrode separated from the first dielectric electrode by a gap region, the phase shifter further comprising a waveguide structure electrically connected to the first dielectric electrode and the second dielectric electrode, the first dielectric electrode and the second dielectric electrode capable of controllably applying an electric field within the waveguide structure, the waveguide structure comprising a material having a first dielectric constant in one direction, the first dielectric electrode and the second dielectric electrode having a second dielectric constant in the one direction that is greater than the first dielectric constant in the one direction, the first dielectric electrode and the second dielectric electrode being spaced apart along the one direction, and the output port outputting the phase-shifted light from the optical switch.

21. 21. The optical switch of claim 20, wherein the first dielectric electrode, the second dielectric electrode, and the waveguide structure are disposed in a single layer having a first width, and the waveguide structure is disposed between the first dielectric electrode and the second dielectric electrode in the single layer.

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