Die separation ring for wafers with large aspect ratios - Patents.com

Abstract

A die separation ring that causes non-uniform expansion of a semiconductor wafer during a semiconductor wafer expansion process. The die separation ring includes an annular body extending about a central axis. The annular body of the die separation ring includes a first portion having a first elevation and a second portion having a second elevation that is lower than the first elevation. A third portion extends between the first portion and the second portion to form a transition between the first portion and the second portion.

Description

[Technical Field]

[0001] (CROSS-REFERENCE TO RELATED APPLICATIONS) This application claims the benefit of the entire contents of U.S. Non-Provisional Application No. 17 / 750,864, entitled "Die Separation Ring for Wafers with Large Diameter Aspect Ratios," filed May 23, 2022, the entire contents of which are incorporated herein by reference for all purposes. [Background technology]

[0002] Semiconductor wafer dicing is the manufacturing process of cutting and then separating the individual dies on a semiconductor wafer. There are many techniques for dicing semiconductor wafers, including scribing, sawing, and laser cutting.

[0003] For example, in a laser dicing process, a laser creates many scribe lines or cracks in the inner layer of a semiconductor wafer. The semiconductor wafer then undergoes an expanding process. The expanding process typically involves mounting the semiconductor wafer on a dicing tape and elevating an expanding ring located below the dicing tape. As the expanding ring moves to the elevated position, the dicing tape expands uniformly toward the outer edge of the semiconductor wafer. The expansion of the dicing tape propagates the cracks in the inner layer of the semiconductor wafer to the front and back surfaces of the semiconductor wafer, thereby forming individual dies.

[0004] However, in some cases, the dies on a semiconductor wafer may have a large aspect ratio. As such, uniform expansion may cause uneven spacing between the dies due to, for example, differences in scribe lines and / or kerfs along the short sides of each die and the long sides of each die. The uneven spacing may lead to the dies not being completely separated and / or the dies on the semiconductor wafer not being recognized during subsequent image recognition processes associated with the die manufacturing process.

[0005] Thus, the expansion ring advantageously expands the dicing tape by different amounts or degrees in different directions depending on the aspect ratio of the die in the semiconductor wafer. Summary of the Invention

[0006] This application describes a die separation ring that can be used to separate dies in a semiconductor wafer having a large aspect ratio (e.g., an aspect ratio of 4:1 or greater). The die separation ring includes a feature that causes an expansion material (e.g., a dicing tape) to which the semiconductor wafer is attached to expand by a first degree or amount in a first direction and by a second degree or amount in a second direction during a die separation / wafer expansion process. By expanding the expansion material to which the semiconductor wafer is attached by different degrees, the spacing between the long sides of the dies and the short sides of the dies can be more evenly spaced compared to a die separation / wafer expansion process in which the semiconductor wafer expands uniformly.

[0007] Accordingly, the present application describes a die separation ring including an annular body extending about a central axis. The annular body has an upper portion and a lower portion. In one embodiment, the upper portion of the annular body includes a first planar surface and a second planar surface. The first planar surface has a first elevation relative to the lower portion of the annular body. Similarly, the second planar surface has a second elevation relative to the lower portion of the annular body. In one embodiment, the second elevation is lower than the first elevation. The die separation ring also includes a third non-planar surface. The third non-planar surface extends between the first planar surface and the second planar surface. In one embodiment, the first planar surface is positioned to contact an expanding material associated with a semiconductor wafer and cause the expanding material to expand in a first direction when the die separation ring is moved from a first position to a second position in a direction parallel to the central axis. Similarly, the second planar surface is positioned to contact an expansion material associated with the semiconductor wafer and cause the expansion material to expand in a second direction when the die separation ring is moved from the first position to the second position, and in one embodiment, the expansion in the second direction is less than the expansion in the first direction.

[0008] The present application also describes a die separation ring including a first substantially planar portion having a first height and a second substantially planar portion having a second height. In one embodiment, the second height is less than the first height. The die separation ring also includes a non-planar transition portion connecting the first substantially planar portion and the second substantially planar portion.

[0009] Also described is a die separation ring including an annular body extending about a central axis. The annular body has an upper portion and a lower portion. In one embodiment, the upper portion of the annular body includes a first expansion means having a first elevation relative to the lower portion of the annular body and a second expansion means having a second elevation relative to the lower portion of the annular body. The second elevation is less than the first elevation. The annular body also includes a non-planar surface extending between the first expansion means and the second expansion means. In one embodiment, the first expansion means causes an expansion material associated with the semiconductor wafer to expand in a first direction, and the second expansion means causes an expansion material associated with the semiconductor wafer to expand in a second direction. The expansion in the second direction is less than the expansion in the first direction.

[0010] This Summary is provided to introduce a selection of concepts in a simplified form that are further described below in the Detailed Description. This Summary is not intended to identify key features or essential features of the claimed subject matter, nor is it intended to be used to limit the scope of the claimed subject matter. [Brief explanation of the drawings]

[0011] Non-limiting and non-exhaustive examples are described with reference to the following drawings:

[0012] [Figure 1A-1B] 1 illustrates an exemplary expanding ring and associated expansion process according to one embodiment.

[0013] [Figure 2] 1 illustrates the results of uniform expansion of a semiconductor wafer having dies with large aspect ratios with an exemplary expansion ring, according to one embodiment.

[0014] [Figure 3] 1 illustrates a die separation ring that can be used to separate dies with large aspect ratios according to one embodiment.

[0015] [Figure 4] According to one embodiment, the die separation ring of FIG. 3 illustrates how it provides non-uniform expansion in different directions.

[0016] [Figure 5] One embodiment illustrates how a first portion of the die separation ring of FIG. 3 having a first elevation causes the expansion material associated with the semiconductor wafer to expand a first amount or degree in a first direction, and how a second portion of the die separation ring of FIG. 3 having a second elevation causes the expansion material associated with the semiconductor wafer to expand a second amount or degree in a second direction.

[0017] [Figure 6] 4 illustrates the results of non-uniform expansion of a semiconductor wafer having dies with large aspect ratios due to the die separation ring of FIG. 3, according to one embodiment.

[0018] [Figure 7] 1 illustrates another exemplary die separation ring that may be used to separate dies having large aspect ratios, according to one embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0019] In the following detailed description, reference is made to the accompanying drawings, which form a part hereof, and in which specific embodiments or examples are shown by way of illustration. These aspects may be combined, other aspects may be utilized, and structural changes may be made without departing from the disclosure. The examples may be embodied as methods, systems, or apparatuses. Thus, the examples may take the form of a hardware implementation, an entirely software implementation, or an implementation combining software and hardware aspects. Therefore, the following detailed description is not to be taken in a limiting sense, and the scope of the present disclosure is defined by the appended claims and their equivalents.

[0020] Semiconductor wafer dicing is a manufacturing process in which dies are separated from a semiconductor wafer. Currently, many different semiconductor wafer dicing techniques exist. For example, semiconductor wafers can be cut or diced using scribing and breaking techniques. In another example, semiconductor wafers can be diced using a mechanical saw or laser.

[0021] In some semiconductor processing techniques, the semiconductor wafer undergoes an expanding process after the initial dicing process. For example, in a laser dicing process, a laser creates many scribe lines or cracks in the inner layers of the semiconductor wafer. An expanding process is then used to separate the individual dies.

[0022] For example, a semiconductor wafer can be mounted on a dicing tape (either before or after the initial dicing process), and the dicing tape is secured to an expansion device. The expansion device moves an expansion ring located below the dicing tape from a first position to a second or raised position. As the expansion ring moves to the raised position, the dicing tape uniformly expands toward the edge of the semiconductor wafer. The expansion of the dicing tape causes cracks in the inner layers of the semiconductor wafer to propagate to the front and back surfaces of the semiconductor wafer, thereby forming individual dies.

[0023] Uniform expansion typically works well for dies with uniform or small aspect ratios. However, in some embodiments, dies within a semiconductor wafer may have large aspect ratios (e.g., aspect ratios of 4:1 or greater). When a semiconductor wafer having dies with large aspect ratios undergoes a uniform expansion process, the dies may be unevenly spaced. This may be caused by different scribe lines and / or different kerf widths along the short and long sides of each die. The uneven spacing may cause various problems, including, but not limited to, the dies not being completely separated during the expansion process and / or the dies not being recognized during subsequent image recognition processes associated with the die manufacturing process.

[0024] To address the above-mentioned problems, the present application describes a die separation ring that causes uneven expansion of a semiconductor wafer during a semiconductor wafer expansion process. For example, the die separation ring described herein includes an annular body extending about a central axis. The die separation ring includes a first portion having a first elevation and a second portion having a second elevation lower than the first elevation. A third portion extends between the first and second portions, forming a transition between the first and second portions.

[0025] In one embodiment, a first portion of the die separation ring having a first elevation (e.g., a higher elevation) is aligned with a longer side of the die in the semiconductor wafer, and a second portion of the die separation ring having a second elevation (e.g., a lower elevation) is aligned with a shorter side of the die in the semiconductor wafer. As the die separation ring moves parallel to the central axis from the first position to a second or elevated position (e.g., 10 millimeters or more), the first portion contacts the expansion material (on which the semiconductor wafer is mounted) before the second portion.

[0026] As the die separation ring continues to move toward the second position, the first portion expands or stretches the expandable material in a first direction (e.g., X direction) by a first degree or amount of expansion. As the die separation ring continues to move toward the raised position, the second portion contacts the expandable material and expands the expandable material in a second direction (e.g., Y direction) by a second degree or amount of expansion.

[0027] In this example, the first degree of expansion (or expansion distance) is greater than the second degree of expansion, and the difference in the degree of expansion of the expansion material causes large aspect ratio dies in the semiconductor wafer to become more evenly spaced during the expansion process, as compared to an expansion process in which the expansion material undergoes a uniform expansion process typically performed using a typical expansion ring.

[0028] Although the die separation ring of the present disclosure causes non-uniform expansion of the expansion material, the non-uniform expansion causes even spacing between the large aspect ratio dies. This helps ensure that the large aspect ratio dies are completely separated during the semiconductor wafer expansion process. Furthermore, the even spacing between the large aspect ratio dies can also help reduce issues (e.g., alarms, die not recognized) during the image recognition process associated with the die manufacturing process.

[0029] These and other embodiments are described in more detail with respect to FIGS. 1A-7.

[0030] 1A and 1B illustrate an exemplary expansion ring 150 for a die separation apparatus 100 according to one embodiment. The expansion ring 150 can be used by the die separation apparatus 100 to provide uniform expansion to the semiconductor wafer 110 during a semiconductor wafer expansion process.

[0031] 1A, a semiconductor wafer 110 may include many dies 120. The semiconductor wafer 110 may be attached to a dicing tape 140 either before or after the semiconductor wafer 110 undergoes a wafer dicing process as described above. In some embodiments, a die attach film (DAF) 130 may be provided between the semiconductor wafer 110 and the dicing tape 140.

[0032] During the semiconductor wafer expanding process (shown in FIG. 1B ), the expansion ring 150 moves upward (indicated by arrow 160) and uniformly expands (represented by arrow 170) the dicing tape 140. During the semiconductor wafer expanding process, the die 120 and the DAF 130 are typically separated.

[0033] 1A and 1B is effective for dies having uniform or small aspect ratios. However, for dies having large aspect ratios (e.g., aspect ratios of 4:1 or greater), uniform expansion may cause uneven kerfs between different sides of the die and / or may not completely separate the die and / or associated DAFs.

[0034] 2 shows a semiconductor wafer 200 having a die 210 with a large aspect ratio (e.g., an aspect ratio of 4:1 or greater). In the example shown in FIG. 2, the semiconductor wafer 200 has already undergone a semiconductor wafer expansion process using a typical expansion ring (e.g., expansion ring 150 (FIG. 1A)).

[0035] 2 , the uniform semiconductor wafer expansion process caused uneven kerfs between the short sides 220 of each die 210 and the long sides 230 of each die 210. For example, the kerf width (represented by arrow 240) between the long sides 230 of adjacent dies 210 of the semiconductor wafer 200 may be smaller than the kerf width (represented by arrow 250) between the short sides 220 of adjacent dies 210 of the semiconductor wafer 200. In addition to causing uneven kerf widths between the dies 210, the uniform expansion process may not completely separate each of the dies 210 and / or may not completely separate any DAFs provided between the semiconductor wafer 200 and the dicing tape.

[0036] 3 illustrates a die separation ring 300 for separating dies having large aspect ratios (e.g., aspect ratios of 4:1 or greater) according to one embodiment. The die separation ring 300 can be used in a die separation apparatus that performs a die separation process or a wafer expansion apparatus that performs a semiconductor wafer expansion process. For example, the die separation ring 300 can be used in any die separation apparatus (e.g., die separation apparatus 100) that currently uses a typical expansion ring (e.g., expansion ring 150 (FIG. 1A)).

[0037] In one embodiment, the die separation ring 300 may be made of any suitable material, including, but not limited to, metal, aluminum, steel, stainless steel, etc. In another embodiment, the die separation ring 300 may be made of a polymer.

[0038] The die separation ring 300 includes an annular body 310 extending about a central axis 315. The die separation ring 300 may have a radius of 170 millimeters. While 170 millimeters is specifically mentioned, the radius of the die separation ring 300 may be greater than or less than 170 millimeters. The die separation ring 300 may have a width of 10 millimeters. In other embodiments, the die separation ring 300 may have a width less than 10 millimeters or a width greater than 10 millimeters.

[0039] The die separation ring 300 may include an inner sidewall 345 and an outer sidewall 340. The inner sidewall 345 and the outer sidewall 340 may extend circumferentially around a central axis 315. The inner sidewall 345 may define an inner radius, and the outer sidewall 340 may define an outer radius. As such, the width of the annular body 310 may be defined by the difference between the inner and outer radii.

[0040] Annular body 310 has an upper portion 305 and a lower portion 365. Upper portion 305 includes an upper surface 320, and lower portion 365 includes a lower surface 325 opposite upper surface 320. In one embodiment, upper surface 320 (or a portion of upper surface 320) is planar or substantially planar. Similarly, lower surface 325 (or a portion of lower surface 325) is planar or substantially planar.

[0041] Annular body 310 may also include an outer edge 330 and an inner edge 335. In one embodiment, outer edge 330 connects top surface 320 to outer sidewall 340. Similarly, inner edge 335 connects top surface 320 to inner sidewall 345 opposite outer sidewall 340. Inner sidewall 345 and outer sidewall 340 extend between top surface 320 and lower surface 325. Lower surface 325 may also include inner and outer edges as previously described.

[0042] In one embodiment, inner edge 330 and / or outer edge 335 may be rounded. In another embodiment, inner edge 330 and / or outer edge 335 may be angled relative to top surface 320, inner sidewall 345, and / or outer sidewall 340. In yet other embodiments, inner edge 330 and / or outer edge 335 may have any shape that reduces the "sharpness" of the edges of die separation ring 300 (e.g., edges that may potentially cut or damage the expanding material when die separation ring 300 is used to expand the expanding material, and a semiconductor wafer mounted on the expanding material, as described in more detail below).

[0043] The die separation ring 300 may be configured in a "wave" or "S" shape. For example, as shown in FIG. 3 , the die separation ring 300 may include a first portion 350 and a second portion 355. The top surface 320 of the first portion 350 may be raised or otherwise have a higher elevation relative to the top surface 320 of the second portion 355. Similarly, the bottom surface 325 of the first portion 350 may be raised or otherwise have a higher elevation relative to the bottom surface 325 of the second portion 355.

[0044] The die separation ring 300 may also include a third portion 360, or transition portion. The third portion 360 extends between the first portion 350 and the second portion 355. In one embodiment, the top surface 320 and / or the bottom surface 325 of the third portion 360 are non-planar. For example, the third portion 360 may extend at an angle or slope from the first portion 350 to the second portion 355. In another embodiment, the third portion 360 may be rounded. In yet another embodiment, the third portion 360 may have a “step” shape (e.g., at an angle of about 90 degrees) relative to the top surface 320 of the first portion 350 and / or the top surface 320 of the second portion 355.

[0045] In some embodiments, the difference in elevation between the top surface 320 of the first portion 350 and the top surface 320 of the second portion 355 is about 3 millimeters or less. In other embodiments, the difference in elevation between the top surface 320 of the first portion 350 and the top surface 320 of the second portion 355 is about 4 millimeters or less. Although 3 millimeters and 4 millimeters are specifically mentioned, the difference in elevation between the top surface 320 of the first portion 350 and the top surface 320 of the second portion 355 may be greater than 4 millimeters.

[0046] For example, in some embodiments, the elevation difference between the top surface 320 of the first portion 350 and the top surface 320 of the second portion 355 is based on or proportional to the aspect ratio of the die in the semiconductor wafer. For example, if the aspect ratio of the die in the semiconductor wafer is 4:1, the elevation difference between the top surface 320 of the first portion 350 and the top surface 320 of the second portion 355 may be 4 millimeters. However, if the aspect ratio of the die in the semiconductor wafer is 5:1, the elevation difference between the top surface 320 of the first portion 350 and the top surface 320 of the second portion 355 may be 5 millimeters. While specific aspect ratios and elevations are given, they are for illustrative purposes only.

[0047] As noted above, the annular body 310 includes a lower portion 365 having a lower surface 325. In the example shown in FIG. 3, the shape of the lower surface 325 mirrors the shape of the upper surface 320. For example, the lower surface 325 of the first portion 350 can be planar or substantially planar. Similarly, the lower surface 325 of the second portion 355 can be planar or substantially planar. However, the lower surface 325 of the third portion 360 can be non-planar due to the transition between the first portion 350 and the second portion 355.

[0048] Because the shape of the lower surface 325 mirrors the shape of the upper surface 320, the height of the annular body 310 of the die separation ring 300 may be consistent or substantially consistent around the circumference of the die separation ring. For example, the upper surface 320 of the first portion 350 may have a higher elevation compared to the upper surface 320 of the second portion 355, but the heights of the first portion 350, the second portion 355, and / or the third portion 360 may be similar or substantially similar around the circumference of the die separation ring 300.

[0049] 4 shows the die separation ring 300 of FIG. 3 being used in a die separation apparatus to separate dies 420 from a semiconductor wafer 410. In one embodiment, the dies 420 have a large aspect ratio (e.g., an aspect ratio of 4:1 or greater).

[0050] 4, a semiconductor wafer 410 is mounted on an extending material 440 (e.g., a dicing tape). The semiconductor wafer 410 can be mounted on the extending material 440 before or after the dicing process. In one embodiment, a die attach film (DAF) 430 can be provided between the semiconductor wafer 410 and the extending material 440.

[0051] During the wafer expansion process, the die separation apparatus moves the die separation ring 300 from a first position to a second position (e.g., a raised position), as represented by arrow 400. The movement of the die separation ring 300 may be parallel to a central axis of the die separation ring 300 (e.g., central axis 315 (FIG. 3)). In one embodiment, the die separation ring 300 may be moved by 10 millimeters or more. In another embodiment, the die separation ring 300 may be moved by less than 10 millimeters.

[0052] As the die separation ring 300 moves from the first position to the second position, the top surface 320 of the raised first portion 350 contacts the expanding material 440, causing the expanding material 440 to expand in a first direction (e.g., the X direction).

[0053] As the die separation ring 300 continues to move to the second position, the top surface 320 of the non-raised second portion 355 contacts the expanding material 440 and begins to expand the expanding material 440 in the second direction (e.g., the Y direction). However, due to the difference in elevation between the raised first portion 350 and the non-raised second portion 355, the expansion of the expanding material 440 (represented by arrows 450) is not uniform. For example, the die separation ring 300 expands more in the first direction (e.g., the X direction) than in the second direction (e.g., the Y direction). Although the expanding material 440 may expand non-uniformly, the spacing between the long sides of adjacent dies 420 in the semiconductor wafer 410 and the spacing between the short sides of adjacent dies 420 in the semiconductor wafer 410 are substantially uniform.

[0054] 5 illustrates an expanded feature of the die separation ring 300 of FIG. 3 according to one embodiment. As previously described, the die separation ring 300 includes a first portion 350 having a top surface that is raised relative to a top surface of a second portion 355. In the illustrated embodiment, the raised first portion 350 of the die separation ring 300 is aligned with a long side of the die 420 of the semiconductor wafer. Similarly, the non-raised second portion 355 of the die separation ring 300 is aligned with a short side of the die 420 of the semiconductor wafer.

[0055] As previously described, as the die separation ring 300 moves from a first position to a second position during the wafer expansion process, the raised first portion 350 contacts the expanding material and begins to expand the expanding material in a first direction (represented by arrow 510). As the die separation ring 300 continues to move toward the second position, the non-raised second portion 355 contacts the expanding material and begins to expand the expanding material in a second direction (represented by arrow 520). Due to the difference in elevation between the first portion 350 of the die separation ring 300 and the second portion 355 of the die separation ring 300, the expansion in the first direction 510 (e.g., the amount or distance of expansion of the expanding material) is greater than the expansion in the second direction 520.

[0056] 6, the spacing between the short sides 220 of adjacent dies 210 in the semiconductor wafer 200 is equal or substantially equal to the spacing between the long sides 230 of adjacent dies 210 in the semiconductor wafer 200. The equal spacing between dies 210 in the manner illustrated in FIG. 6 helps address the problems described above. That is, the equal spacing enabled by the die separation ring 300 of the present disclosure addresses the potential problem of dies not being completely separated during the wafer expansion process and / or dies not being recognized during the wafer / image recognition process.

[0057] 7 illustrates a die separation ring 700 for separating dies having large aspect ratios (e.g., aspect ratios of 4:1 or greater) according to another embodiment. Similar to die separation ring 300 (FIG. 3), die separation ring 700 can be used in a die separation apparatus that performs a die separation process or a wafer expansion apparatus that performs a wafer expansion process. For example, die separation ring 700 can be used in any die separation apparatus (e.g., die separation apparatus 100) that currently uses a typical expansion ring (e.g., expansion ring 150 (FIG. 1A)).

[0058] 3, the die separation ring 700 may be made of any suitable material, including but not limited to metal, aluminum, steel, stainless steel, etc. In another example, the die separation ring 700 may be made of a polymer.

[0059] The die separation ring 700 includes an annular body 710 extending around a central axis 715. The die separation ring 700 may have a radius of 170 millimeters. In another example, the radius of the die separation ring 700 may be greater than or less than 170 millimeters. The die separation ring 700 may have a width of 10 millimeters. In other examples, the die separation ring 700 may have a width less than or greater than 10 millimeters. The die separation ring 700 may include an inner sidewall 745 and an outer sidewall 740. The inner sidewall 745 and the outer sidewall 740 may extend circumferentially around the central axis 715. The inner sidewall 745 may define an inner radius, and the outer sidewall 740 may define an outer radius. As such, the width of the annular body 710 may be defined by the difference between the inner radius and the outer radius.

[0060] Annular body 710 has an upper portion 705 and a lower portion 765. Upper portion 705 includes an upper surface 720, and lower portion 765 includes a lower surface 725 opposite upper surface 720. In one embodiment, upper surface 720 (or a portion of upper surface 720) is planar or substantially planar. However, in this embodiment, the entire lower surface 725 is planar or substantially planar.

[0061] The annular body 710 (including both the upper and lower portions 705, 765 of the annular body 710) may include an outer edge 730 and an inner edge 735. In one embodiment, the outer edge 730 connects the upper surface 720 to an outer sidewall 740. Similarly, the inner edge 735 connects the upper surface 720 to an inner sidewall 745 opposite the outer sidewall 740. The inner sidewall 745 and the outer sidewall 740 extend between the upper surface 720 and the lower surface 725.

[0062] In one embodiment, inner edge 730 and / or outer edge 735 may be rounded. In another embodiment, inner edge 730 and / or outer edge 735 may be angled relative to top surface 720, inner sidewall 745, and / or outer sidewall 740. In yet other embodiments, inner edge 730 and / or outer edge 735 may have any shape that reduces sharp edges of die separation ring 700.

[0063] The top surface 720 of the die separation ring 700 may be configured in a "wave" or "S" shape. For example, as shown in FIG. 7, the die separation ring 700 may include a first portion 750 and a second portion 755. The top surface 720 of the first portion 750 may be raised and / or otherwise have a greater height relative to the top surface 720 of the second portion 755. For example, because the bottom surface 725 is substantially planar around the circumference of the annular body 710, the first portion 750 may have a greater height (as measured from the bottom surface 725 to the top surface 720) compared to the height of the second portion 755 (as measured from the bottom surface 725 to the top surface 720).

[0064] The die separation ring 700 may also include a third portion 760, or transition portion. The third portion 760 extends between the first portion 750 and the second portion 755. In one embodiment, the top surface 720 and / or the bottom surface 725 of the third portion 760 are non-planar. For example, the third portion 760 may extend at a slope or angle from the first portion 750 to the second portion 755. As a result, the height of the third portion 760 may increase based at least in part on the degree or slope of the transition portion. In another embodiment, the third portion 760 may be rounded. In yet another embodiment, the third portion 760 may have a “step” shape (e.g., having an angle of about 90 degrees) relative to the top surface 720 of the first portion 750 and / or the top surface 720 of the second portion 755.

[0065] In some embodiments, the difference in elevation or height between the top surface 720 of the first portion 750 and the top surface 720 of the second portion 755 is about 3 millimeters or less. In other embodiments, the difference in elevation or height between the top surface 720 of the first portion 750 and the top surface 720 of the second portion 755 is about 4 millimeters or less. Although 3 millimeters and 4 millimeters are specifically mentioned, the difference in elevation or height between the top surface 720 of the first portion 750 and the top surface 720 of the second portion 755 may be greater than 4 millimeters.

[0066] For example, in some embodiments, the elevation or height difference between the top surface 720 of the first portion 750 and the top surface 720 of the second portion 755 is based on or proportional to the diameter aspect ratio of the die in the semiconductor wafer. For example, if the diameter aspect ratio of the die in the semiconductor wafer is 4:1, the elevation or height difference between the top surface 720 of the first portion 750 and the top surface 720 of the second portion 755 may be 4 millimeters. However, if the diameter aspect ratio of the die in the semiconductor wafer is 5:1, the elevation or height difference between the top surface 720 of the first portion 750 and the top surface 720 of the second portion 755 may be 5 millimeters. While specific diameter aspect ratios and elevations are given, they are for illustrative purposes only.

[0067] The description and illustration of one or more embodiments provided in this disclosure are not intended to limit or restrict the scope of the disclosure in any way. The embodiments, examples, and details provided in this disclosure are believed to be sufficient to convey proprietary rights and to enable others to make and use the best mode of the claimed disclosure.

[0068] The claimed disclosure should not be construed as limited to any aspect, example, or detail provided in this disclosure. Whether shown and described in combination or separately, various features (both structural and methodological) are intended to be selectively rearranged, included, or omitted to produce embodiments with a particular set of features. The present description and illustrations have been provided, and those skilled in the art may envision variations, modifications, and alternative embodiments that fall within the spirit of the broader aspects of the general inventive concepts embodied herein without departing from the broader scope of the claimed disclosure.

[0069] As used herein, references to elements using designations such as "first," "second," etc. generally do not limit the quantity or order of those elements. Rather, these designations may be used as a way of distinguishing between two or more elements or instances of an element. Thus, references to a first element and a second element do not imply that only two elements may be used or that the first element precedes the second element. Furthermore, unless otherwise specified, a set of elements may include one or more elements.

[0070] As used in this specification or claims, terms of the form "at least one of A, B, or C" or "A, B, C, or any combination thereof" mean "A, or B, or C, or any combination of these elements." For example, the terms can include A, or B, or C, or A and B, or A and C, or A and B and C, or 2A, or 2B, or 2C, or 2A and B, etc. As an additional example, "at least one of A, B, or C" is intended to cover A, B, C, AB, AC, BC, and ABC, as well as multiples of the same member. Similarly, "at least one of A, B, and C" is intended to cover A, B, C, AB, AC, BC, and ABC, as well as multiples of the same member.

[0071] Similarly, as used herein, a phrase referring to a list of items linked by "and / or" refers to any combination of the items. As one example, "A and / or B" is intended to cover A alone, B alone, or A and B together. As another example, "A, B, and / or C" is intended to cover A alone, B alone, C alone, A and B together, A and C together, B and C together, or A, B, and C together.

Claims

1. A die separation ring including an annular body extending about a central axis, The annular body has an upper portion and a lower portion, the upper portion comprising: a first planar surface having a first elevation relative to the lower portion of the annular body; a second planar surface having a second elevation relative to the lower portion of the annular body that is less than the first elevation; a third surface extending between the first planar surface and the second planar surface; the first planar surface is positioned to contact an expansion material associated with the semiconductor wafer and cause the expansion material to expand in a first direction when the die separation ring moves from a first position to a second position in a direction parallel to the central axis; The second flat surface is positioned to contact the expansion material associated with the semiconductor wafer and cause the expansion material to expand in a second direction when the die separation ring moves from the first position to the second position, the expansion in the second direction being less than the expansion in the first direction.

2. 2. The die separation ring of claim 1, wherein the difference between the first elevation and the second elevation is 3 millimeters.

3. 2. The die isolation ring of claim 1, wherein a difference between the first elevation and the second elevation is proportional to an aspect ratio of a die associated with the semiconductor wafer.

4. The die separation ring of claim 1 , wherein the annular body includes inner and outer sidewalls extending circumferentially about the central axis.

5. The upper portion of the annular body includes: further comprising an inner edge and an outer edge; The die separation ring of claim 4 , wherein the inner sidewall extends from the inner edge to the lower portion of the annular body and the outer sidewall extends from the outer edge to the lower portion of the annular body.

6. 6. The die separation ring of claim 5, wherein said inner sidewall defines an inner radius, said outer sidewall defines an outer radius, and wherein a width of said die separation ring is the difference between said inner radius and said outer radius.

7. The die separation ring of claim 1 , wherein the lower portion of the annular body includes a lower surface, the lower surface being planar.

8. a first substantially planar portion having a first height; a second substantially planar portion having a second height less than the first height; a transition portion connecting the first substantially planar portion and the second substantially planar portion; a die separation ring including:

9. the first substantially planar portion is positioned to contact an expanding material associated with the semiconductor wafer and expand the expanding material a first amount in a first direction; the second substantially planar portion is positioned to contact the expanding material associated with the semiconductor wafer and expand the expanding material a second amount in a second direction, the first amount being greater than the second amount; The die separation ring of claim 8 .

10. 9. The die isolation ring of claim 8, wherein a difference between the first height and the second height is proportional to an aspect ratio of a die associated with a semiconductor wafer.

11. 9. The die separation ring of claim 8, wherein the difference between the first height and the second height is at least 3 millimeters.

12. 9. The die separation ring of claim 8, further comprising an inner sidewall and an outer sidewall, each of said inner sidewall and said outer sidewall extending circumferentially about a central axis of said die separation ring.

13. 13. The die separation ring of claim 12, further comprising an inner edge and an outer edge, wherein the inner sidewall extends from the inner edge to a lower portion of the die separation ring and the outer sidewall extends from the outer edge to the lower portion of the die separation ring.

14. The die separation ring of claim 13 , wherein at least one of the inner edge and the outer edge is rounded.

15. A die separation ring including an annular body extending about a central axis, The annular body has an upper portion and a lower portion, the upper portion comprising: a first extension means having a first elevation relative to the lower portion of the annular body; a second extension means having a second elevation relative to the lower portion of the annular body that is less than the first elevation; a surface extending between the first extension means and the second extension means; the first expansion means expands an expansion material associated with the semiconductor wafer in a first direction; The second expansion means causes the expansion material associated with the semiconductor wafer to expand in a second direction, the expansion in the second direction being less than the expansion in the first direction.

16. 16. The die separation ring of claim 15, wherein the difference between the first elevation and the second elevation is 3 millimeters.

17. 16. The die separation ring of claim 15, wherein a difference between the first elevation and the second elevation is proportional to an aspect ratio of a die associated with the semiconductor wafer.

18. the first expansion means is a first flat surface; the second expansion means is a second flat surface; 16. The die separation ring of claim 15.

19. a rounded inner edge extending on an inner sidewall of the annular body, the inner sidewall extending circumferentially about the central axis; and a rounded outer edge extending to an outer sidewall of the annular body opposite the inner sidewall, wherein each of the inner sidewall and the outer sidewall transitions to the lower portion of the annular body.

16. The die separation ring of claim 15.

20. The die separation ring of claim 15 , wherein the lower portion of the annular body includes a lower surface, the lower surface being planar.

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