Substrate placing table, substrate processing apparatus, and substrate processing method

Abstract

To provide a substrate mounting table, a substrate processing device, and a substrate processing method that suppress non-uniform substrate processing at positions corresponding to lift pins.SOLUTION: A substrate mounting table having a mounting surface on which a substrate is placed includes a base material, an elevating pin that is made of a conductor, that moves up and down with respect to the mounting surface, that has a step between an upper portion and a lower portion, and in which the diameter of the upper portion is larger than the diameter of the lower portion, a pin hole that opens in the placement surface and is formed inside the base material, into which the elevating pin protrudes and sinks, and a holder including a through hole through which the elevating pin passes, and is provided on the base material and is made of a conductor. The holder includes an outer holder and an inner holder, the through hole is formed on the central axis of the inner holder such that the elevating pin can move up and down, the diameter of the through hole is smaller than the diameter of the upper portion of the elevating pin, and the inner holder is slidably supported by the outer holder via an elastic member disposed between the inner holder and the outer holder.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present disclosure relates to a substrate mounting table, a substrate processing apparatus, and a substrate processing method. [Background technology]

[0002] Patent Document 1 discloses a substrate mounting table that, when performing plasma processing on a substrate, suppresses non-uniformity in processing at positions of the mounting table body that correspond to insertion holes for lift pins. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2007-273685 Summary of the Invention [Problem to be solved by the invention]

[0004] The present disclosure provides a substrate mounting table, a substrate processing apparatus, and a substrate processing method that suppress uneven substrate processing at positions corresponding to lift pins. [Means for solving the problem]

[0005] According to one aspect of the present disclosure, there is provided a substrate mounting table having a mounting surface on which a substrate is placed, the substrate comprising: a base material located below the mounting surface and made of a conductor; lifting pins made of a conductor, which rise and fall relative to the mounting surface and have a step between their upper and lower parts, the diameter of the upper part being larger than the diameter of the lower part; pin holes that open onto the mounting surface and are formed inside the base material and through which the lifting pins protrude and sink; and a holder provided on the base material and made of a conductor, the holder including a pin hole that opens onto the mounting surface and is formed inside the base material and through which the lifting pins pass, and a through hole through which the lifting pins pass, the holder comprising an outer holder and an inner holder having a common central axis, the through hole being formed on the central axis of the inner holder so that the lifting pins can move up and down, the diameter of the through hole being smaller than the diameter of the upper part of the lifting pin, the substrate mounting table being slidably supported by the outer holder via an elastic member arranged between the outer holder and the inner holder. [Effects of the Invention]

[0006] The present disclosure provides a substrate mounting table, a substrate processing apparatus, and a substrate processing method that suppress uneven substrate processing at positions corresponding to lift pins. [Brief explanation of the drawings]

[0007] [Figure 1] FIG. 1 is a cross-sectional view showing a substrate processing apparatus including a substrate mounting table according to this embodiment. [Figure 2] FIG. 2 is an enlarged cross-sectional view of the substrate mounting table according to this embodiment. [Figure 3] FIG. 3 is an enlarged cross-sectional view of the substrate mounting table according to this embodiment. [Figure 4] FIG. 4 is a partial side view of the lift pins provided on the substrate mounting table according to this embodiment. [Figure 5] FIG. 5 is an enlarged cross-sectional view of a holder included in the substrate mounting table according to this embodiment. [Figure 6] FIG. 6 is a flowchart illustrating a substrate processing method using a substrate processing apparatus including a substrate mounting table according to this embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0008] Hereinafter, embodiments of the present disclosure will be described with reference to the drawings. In this specification and the drawings, substantially identical components are designated by the same reference numerals, and redundant description will be omitted.

[0009] In the directions of parallel, right-angle, orthogonal, horizontal, vertical, up / down, left / right, etc., deviations are permitted to the extent that they do not impair the effects of the embodiments. The shape of the corners is not limited to right angles and may be rounded like an arch. Parallel, right-angle, orthogonal, horizontal, and vertical may include approximately parallel, approximately right-angle, approximately orthogonal, approximately horizontal, and approximately vertical.

[0010] 1 is a cross-sectional view showing a substrate processing apparatus 1 including a substrate mounting table 20 according to this embodiment. The substrate processing apparatus 1 is, for example, a plasma etching apparatus. The substrate processing apparatus 1 is, for example, a capacitively coupled parallel plate plasma etching apparatus.

[0011] The substrate processing apparatus 1 is an apparatus that performs etching processing on, for example, a glass substrate G for a flat panel display (FPD). Examples of flat panel displays include a liquid crystal display, a light emitting diode display, an electroluminescence display, a fluorescent display tube, and a plasma display.

[0012] The substrate processing apparatus 1 includes a processing chamber 10, a substrate mounting table 20, a power supply unit 30, a gas supply unit 40, and an exhaust unit 50.

[0013] [Processing vessel 10] The processing vessel 10 is a so-called processing chamber. The processing vessel 10 is made of, for example, aluminum or an aluminum alloy whose surface has been anodized (anodized). The processing vessel 10 has a rectangular cylindrical shape.

[0014] The processing vessel 10 includes a shower head 11 at its top. The shower head 11 functions as an upper electrode, facing parallel to the substrate mounting table 20. The shower head 11 supplies gas to a processing space 10S of the processing vessel 10.

[0015] The shower head 11 is provided above the substrate mounting table 20. The shower head 11 is supported on the upper part of the processing chamber 10. The shower head 11 is grounded. The shower head 11 and the substrate mounting table 20 form a pair of parallel plate electrodes.

[0016] The shower head 11 has an internal space 11a therein and a plurality of outlet holes 11b through which a processing gas is discharged onto a surface facing the substrate mounting table 20.

[0017] A gas inlet 11c is provided on the top surface of the shower head 11. A processing gas supply pipe 40p is connected to the gas inlet 11c. A gas supply unit 40 is connected to the processing gas supply pipe 40p.

[0018] The processing vessel 10 has a bottom wall 10a provided with a spacer member 12 for placing the substrate mounting table 20 thereon. The spacer member 12 is made of an insulating material. The spacer member 12 is provided to correspond to the outer shape of the substrate mounting table 20. The substrate mounting table 20 is placed on the spacer member 12. The substrate mounting table 20 is composed of a main body 21 and an insulating member 22.

[0019] The gap between the spacer member 12 and the bottom wall 10a, and the gap between the spacer member 12 and the main body 21 and the insulating member 22 are airtightly sealed. Therefore, a space 10A of atmospheric air is formed between the main body 21 and the bottom wall 10a of the substrate mounting table 20. The space 10A provides insulation from the atmosphere.

[0020] The processing vessel 10 includes a plurality of insulating members 13. The insulating members 13 are embedded in the bottom wall 10a of the processing vessel 10. Bolts 14 are inserted into through holes provided vertically in the centers of the insulating members 13. The bolts 14 fasten the main body 21 of the substrate mounting table 20 to the bottom wall 10a. By fastening the main body 21 to the bottom wall 10a using the plurality of bolts 14, it is possible to prevent the substrate mounting table 20 from bending due to the pressure difference between the processing space 10S in a vacuum atmosphere and the space 10A in an air atmosphere, even when the inside of the processing vessel 10 is maintained at a vacuum.

[0021] The processing vessel 10 includes an exhaust pipe 15 connected to the bottom wall 10a. The exhaust pipe 15 is connected to an exhaust unit 50. The exhaust unit 50 exhausts the processing space 10S of the processing vessel 10. The exhaust unit 50 evacuates the processing space 10S of the processing vessel 10 to a predetermined reduced pressure.

[0022] The processing vessel 10 is provided on a side wall with a substrate loading / unloading port 16 and a gate valve 17 for opening and closing the substrate loading / unloading port 16. With the gate valve 17 open, the substrate processing apparatus 1 transfers a glass substrate G between the processing vessel 1 and an adjacent load lock chamber (not shown).

[0023] [Board mounting table 20] The substrate processing apparatus 1 includes a substrate mounting table 20 on the bottom of a processing chamber 10, on which a glass substrate G, which is a substrate to be processed, is mounted. The substrate mounting table 20 mounts the glass substrate G on a mounting surface 20S. That is, the substrate mounting table 20 has a mounting surface 20S. The substrate mounting table 20 is disposed inside the processing chamber 10.

[0024] The substrate mounting table 20 includes a main body 21, an insulating member 22, and a plurality of substrate lifting units 23. FIGS. 2 and 3 are enlarged cross-sectional views of the substrate mounting table 20 according to this embodiment. Specifically, FIGS. 2 and 3 are enlarged cross-sectional views of the substrate lifting units 23 of the substrate mounting table 20. FIG. 2 shows a state in which a glass substrate G is mounted on the substrate mounting table 20 and the lifting pins 23a are retracted inside the substrate mounting table 20. The state shown in FIG. 2 is referred to as the retracted state. FIG. 3 shows a state in which the glass substrate G is lifted from the substrate mounting table 20 by the lifting pins 23a. The state shown in FIG. 3 is referred to as the supported state.

[0025] (Main body 21) When high frequency power is supplied from the power supply unit 30, the main body unit 21 acts as a lower electrode.

[0026] The main body 21 includes a base material 21a, a dielectric layer 21b, a plurality of protrusions 21c, and a bank portion 21d. The bank portion 21d is formed in a frame shape around the periphery of the upper surface of the main body 21, protruding upward from the dielectric layer 21b. The main body 21 includes pin holes 21h through which elevating pins 23a of the substrate elevating unit 23 protrude. The pin holes 21h penetrate the base material 21a and the dielectric layer 21b. The pin holes 21h open to the mounting surface 20S. The mounting surface 20S also has a plurality of cooling gas holes (not shown) for supplying a cooling gas (back-cooling gas) such as helium. The cooling gas such as helium is supplied between the mounting surface 20S and the lower surface (rear surface) of the glass substrate G and exchanges heat with the glass substrate G to adjust the temperature of the glass substrate G.

[0027] The substrate 21a is made of a conductive material, i.e., a conductor. The substrate 21a is made of, for example, a metal. Specifically, the substrate 21a is made of, for example, aluminum, an aluminum alloy, a stainless steel alloy, or a combination of an aluminum alloy and a stainless steel alloy. The substrate 21a is located below the placement surface 20S. A substrate lifting unit 23 is attached to the substrate 21a.

[0028] The main body 21 includes a dielectric layer 21b on top of a base material 21a. The dielectric layer 21b is made of a dielectric material such as ceramics. An electrode 21b1 for electrostatic attraction is embedded inside the dielectric layer 21b. The electrode 21b1 is an electrostatic attraction electrode. A voltage is applied to the electrode 21b1 from an external power supply (not shown). When a voltage is applied to the electrode 21b1, the glass substrate G is attracted by Coulomb force. The electrode 21b1 is made of, for example, tungsten.

[0029] The base material 21a has a flow path (not shown) inside. A heat medium set to a predetermined temperature flows through the flow path of the base material 21a, thereby adjusting the temperature of the base material 21a to a predetermined desired temperature.

[0030] The main body 21 has a plurality of protrusions 21c and banks 21d on the upper part of the dielectric layer 21b. The protrusions 21c and banks 21d are formed of, for example, a dielectric material. The protrusions 21c are formed in a protruding shape on the upper part of the dielectric layer 21b, and the banks 21d are provided on the peripheral part of the upper part of the dielectric layer 21b. The upper surface of the banks 21d and the upper surface of the protrusions 21c are higher than or at the same height as the upper surface of the protrusions 21c. When the glass substrate G is placed on the substrate mounting table 20, the glass substrate G is in contact with the upper surface of the banks 21d, or with the upper surfaces of the banks 21d and the protrusions 21c. Note that the main body 21 does not necessarily have to have a plurality of protrusions 21c, and the area inside the banks 21d may be flat. Furthermore, when the area inside the bank portion 21d is to be a flat surface, it may be roughened.

[0031] (insulating member 22) The substrate mounting table 20 includes an insulating member 22 provided to surround the periphery of the base material 21a. The upper surface of the insulating member 22 is slightly lower than the upper surface of the bank portion 21d of the main body portion 21, and does not come into contact with the glass substrate G, forming a gap (for example, about 0.1 to 0.3 mm). The insulating member 22 may be divided into multiple members, such as an upper member and a lower member.

[0032] (Substrate lifting unit 23) The substrate lifting unit 23 supports the glass substrate G above and spaced apart from the substrate mounting table 20 when loading and unloading the glass substrate G onto and from the substrate mounting table 20. The glass substrate G supported above and spaced apart from the substrate mounting table 20 is carried in and out by a transport device.

[0033] The substrate lifting unit 23 is inserted into the processing vessel 10 from the outside of the bottom wall 10a. The substrate lifting unit 23 includes a lifting pin 23a, a holder 23b, a biasing member 23c, an O-ring 23d, a connecting portion 23e, and a lifting unit 23f.

[0034] (Lifting pin 23a) The lifting pins 23a support the glass substrate G. The lifting pins 23a also raise and lower the glass substrate G. The lifting pins 23a protrude and sink into pin holes 21h formed in the main body 21. The lifting pins 23a are made of a conductive material.

[0035] 4 is a partial side view of a lift pin 23a provided on the substrate mounting table 20 according to this embodiment. The lift pin 23a has an upper portion 23a1, an inclined portion 23a2, and a lower portion 23a3. The lift pin 23a has a shape that is rotationally symmetrical with respect to the central axis AX.

[0036] The upper portion 23a1 of the lift pin 23a has a central axis AX and a cylindrical shape with a diameter D2. The diameter D2 of the upper portion 23a1 is smaller than the diameter D1 of the pin hole 21h. Therefore, even when the lift pin 23a moves up and down, the lift pin 23a does not come into contact with the inner surface of the pin hole 21h. This prevents the lift pin 23a from coming into contact with the inner surface of the pin hole 21h, thereby preventing the generation of particles and the like.

[0037] When the lifting pins 23a are raised, the upper surfaces 23aA of the upper portions 23a1 support the glass substrate G. In other words, the upper surfaces 23aA of the upper portions 23a1 serve as a support surface that supports the glass substrate G. The lifting pins 23a are capable of coming into contact with the glass substrate G at the upper surfaces 23aA of the upper portions 23a1.

[0038] The side surface 23aB of the lift pin 23a forms a sealing surface that comes into contact with the O-ring 23d. When the lift pin 23a is in the retracted state (see FIG. 2), the side surface 23aB of the upper portion 23a1 comes into contact with the O-ring 23d. The contact between the side surface 23aB of the lift pin 23a and the O-ring 23d maintains airtightness between the lift pin 23a and the O-ring 23d. In other words, the contact between the side surface 23aB of the lift pin 23a and the O-ring 23d ensures airtightness between the lift pin 23a and the holder 23b.

[0039] For example, a cooling gas (back-cooling gas) such as helium may flow between the lower surface (rear surface) of the glass substrate G and the mounting surface 20S. By ensuring airtightness between the lifting pins 23a and the holder 23b, leakage of the cooling gas below the pin holes 21h can be suppressed. By suppressing leakage of the cooling gas, temperature stability can be improved.

[0040] The inclined portion 23a2 of the lift pin 23a connects the upper portion 23a1 and the lower portion 23a3, which have different outer diameters. The inclined portion 23a2 connects the step between the upper portion 23a1 and the lower portion 23a3. The inclined portion 23a2 has a symmetrical shape with respect to the central axis AX. The inclined portion 23a2 has a truncated cone shape with a larger upper surface and a smaller lower surface.

[0041] The inclined portion 23a2 has a side surface 23aC. When the lift pins 23a are in the retracted state (see FIG. 2), the side surface 23aC comes into contact with an inclined surface 23nA (see FIG. 5) of an inner holder 23n provided in the holder 23b. The contact between the side surface 23aC and the inclined surface 23nA brings the lift pins 23a into electrical contact with the holder 23b. The electrical contact between the lift pins 23a and the holder 23b brings the base material 21a and the lift pins 23a into electrical contact and into the same potential. The base material 21a and the lift pins 23a being at the same potential makes it possible to make the potential distribution on the mounting surface 20S of the substrate mounting table 20 uniform.

[0042] Furthermore, when the lift pins 23a are in the supporting state (see FIG. 3), the side surfaces 23aC are separated from the inclined surfaces 23nA of the inner holders 23n of the holders 23b. As the side surfaces 23aC and the inclined surfaces 23nA are separated, the lift pins 23a are electrically disconnected from the holders 23b. As the lift pins 23a are electrically disconnected from the holders 23b, the substrate 21a and the lift pins 23a are insulated. As the substrate 21a and the lift pins 23a are insulated, for example, abnormal discharge can be prevented when a charged glass substrate G is removed from the substrate mounting table 20 while being neutralized by neutralization plasma.

[0043] The lower portion 23a3 of the lift pin 23a has a central axis AX and a cylindrical shape with a diameter D3. The diameter D3 of the lower portion 23a3 is smaller than the inner diameter of the O-ring 23d. Therefore, when the lift pin 23a is in a supported state (see FIG. 3), the side surface 23aD of the lower portion 23a3 does not come into contact with the inner surface of the O-ring 23d. Therefore, when the lift pin 23a moves, the generation of particles and the like due to contact with the O-ring 23d can be suppressed.

[0044] (holder 23b) The holder 23b holds the lift pins 23a so that they can be raised and lowered. The holder 23b includes an outer holder 23m and an inner holder 23n.

[0045] 5 is an enlarged cross-sectional view of the holder 23b included in the substrate mounting table 20 according to this embodiment. The outer holder 23m and the inner holder 23n have a common central axis BX. The outer holder 23m and the inner holder 23n have shapes that are rotationally symmetrical with respect to the central axis BX.

[0046] The outer holder 23m is fitted into a recess 21ah provided on the lower surface of the base material 21a. The outer holder 23m is made of a conductive material. The outer holder 23m is made of, for example, aluminum or an aluminum alloy. The outer holder 23m is electrically connected to the base material 21a. The upper surface 23mA and the side surface 23mB of the outer holder 23m contact the inner surface of the recess 21ah. The upper surface 23mA and the side surface 23mB of the outer holder 23m contact the inner surface of the recess 21ah, thereby establishing electrical continuity between the outer holder 23m and the base material 21a.

[0047] The outer holder 23m has an upper portion 23ma, a cylindrical portion 23mb, and a lower portion 23mc. The outer holder 23m is hollow inside. The outer holder 23m holds the inner holder 23n and the biasing member 23c inside.

[0048] The upper portion 23ma has a disk-like shape and an opening 23mh. The diameter of the opening 23mh is equal to the diameter D1 of the pin hole 21h. Note that the diameter of the opening 23mh may be larger than the diameter D1. The upper portion 23ma has a ring groove 23mg that holds an O-ring 23d. The O-ring 23d is provided in the ring groove 23mg.

[0049] The cylindrical portion 23mb has a cylindrical shape. An inner surface 23mC of the cylindrical portion 23mb contacts an outer surface 23nB of the inner holder 23n. The contact between the inner surface 23mC and the outer surface 23nB establishes electrical continuity between the outer holder 23m and the inner holder 23n. The inner holder 23n moves relative to the outer holder 23m. Therefore, to facilitate sliding between the inner surface 23mC and the outer surface 23nB, a metal film containing a fluorine-based resin is formed on the inner surface 23mC. For example, nickel or platinum is used as the metal film.

[0050] The lower portion 23mc has a disk-like shape with an opening 23mi. The diameter of the opening 23mi in the lower portion 23mc is equal to the outer diameter of the cylindrical portion 23nb of the inner holder 23n. The inner surface 23mD of the lower portion 23mc contacts the outer surface 23nC of the inner holder 23n. The contact between the inner surface 23mD and the outer surface 23nC establishes electrical conduction between the outer holder 23m and the inner holder 23n. The inner holder 23n moves relative to the outer holder 23m. Therefore, to facilitate sliding between the inner surface 23mD and the outer surface 23nC, a metal film containing a fluorine-based resin is formed on the inner surface 23mD. For example, nickel or platinum is used as the metal film.

[0051] The inner holder 23n is provided inside the outer holder 23m. The inner holder 23n is slidably supported by the outer holder 23m. The inner holder 23n is provided so as to be movable in the up and down direction relative to the outer holder 23m, i.e., so as to be movable up and down. The inner holder 23n is formed of a conductive member. The inner holder 23n is formed of, for example, aluminum or an aluminum alloy.

[0052] The inner holder 23n has through holes 23nh that penetrate in the vertical direction. The through holes 23nh are formed on the central axis of the inner holder 23n, in other words, on the central axis BX. The through holes 23nh are formed with an inner diameter larger than the diameter D3 of the lower parts 23a3 of the lift pins 23a so that the lift pins 23a can move up and down. The through holes 23nh are also formed with an inner diameter smaller than the diameter D2 of the upper parts 23a1 of the lift pins 23a. The inner holder 23n includes an upper part 23na and a cylindrical part 23nb.

[0053] The upper portion 23na has an inclined surface 23nA at the upper end above the through-hole 23nh. When the lift pins 23a are in the retracted state (see FIG. 2), the inclined surface 23nA comes into contact with the side surface 23aC of the lift pins 23a. The contact between the inclined surface 23nA and the side surface 23aC brings the lift pins 23a into electrical contact with the holder 23b. The electrical contact between the lift pins 23a and the holder 23b brings the base material 21a and the lift pins 23a into electrical contact and into the same potential. The base material 21a and the lift pins 23a being at the same potential makes it possible to make the potential distribution on the substrate mounting table 20 uniform.

[0054] The outer diameter of the upper portion 23na is equal to the diameter of the inner surface 23mC of the cylindrical portion 23mb of the outer holder 23m. Therefore, the outer surface 23nB, which is the side surface of the upper portion 23na, contacts the inner surface 23mC of the cylindrical portion 23mb. The contact between the outer surface 23nB and the inner surface 23mC establishes electrical continuity between the outer holder 23m and the inner holder 23n. The inner holder 23n moves relative to the outer holder 23m. Therefore, to facilitate sliding between the inner surface 23mC and the outer surface 23nB, a metal film containing a fluorine-based resin is formed on the outer surface 23nB. For example, nickel or platinum is used as the metal film.

[0055] Additionally, a biasing member 23c is provided between the upper portion 23na and the lower portion 23mc of the outer holder 23m. The inner holder 23n is biased upward by the biasing member 23c. When the lift pins 23a descend in the retracted state (see FIG. 2), the lift pins 23a come into contact with the inner holder 23n. By biasing the inner holder 23n upward by the biasing member 23c, the lift pins 23a and the inner holder 23n can come into contact while maintaining a predetermined pressing force. By bringing the lift pins 23a and the inner holder 23n into contact while maintaining a predetermined pressing force, electrical continuity between the lift pins 23a and the inner holder 23n can be sufficiently ensured.

[0056] Furthermore, by urging the inner holder 23n upward with the urging member 23c, the inner holder 23n can move when the elevating pins 23a move the inner holder 23n and make contact.

[0057] The cylindrical portion 23nb has a cylindrical shape. An outer surface 23nC of the cylindrical portion 23nb contacts an inner surface 23mD of the outer holder 23m. The contact between the outer surface 23nC and the inner surface 23mD establishes electrical continuity between the outer holder 23m and the inner holder 23n. The inner holder 23n moves relative to the outer holder 23m. Therefore, to facilitate sliding between the outer surface 23nC and the inner surface 23mD, a metal film containing a fluorine-based resin is formed on the outer surface 23nC. For example, nickel or platinum is used as the metal film.

[0058] In FIG. 5, the area where outer holder 23m and inner holder 23n are in contact with each other and are electrically connected is shown surrounded by a dotted ellipse.

[0059] (urging member 23c) The biasing member 23c biases the inner holder 23n upward. The biasing member 23c is an elastic member. The biasing member 23c is, for example, a helical spring. The biasing member 23c is disposed between the outer holder 23m and the inner holder 23n. More specifically, the biasing member 23c is disposed between a lower portion 23mc of the outer holder 23m and an upper portion 23na of the inner holder 23n. The biasing member 23c may be formed of a conductor. By forming the biasing member 23c of a conductor, it is possible to strengthen the conduction between the outer holder 23m and the inner holder 23n via the biasing member 23c.

[0060] (O-ring 23d) The O-ring 23d ensures airtightness between the lift pins 23a and the holder 23b. The O-ring 23d is provided in the ring groove 23mg in the outer holder 23m. When the lift pins 23a are in the retracted state, the O-ring 23d is interposed between the upper part 23a1 of the lift pins 23a and the ring groove 23mg. By interposing the O-ring 23d between the upper part 23a1 of the lift pins 23a and the ring groove 23mg, the O-ring 23d ensures airtightness between the lift pins 23a and the holder 23b.

[0061] (Connection part 23e) The connecting portion 23e connects the main body 21 and the lifting portion 23f. The connecting portion 23e is made of, for example, a bellows. The connecting portion 23e is made of a conductive material.

[0062] (Lifting section 23f) The lifting unit 23f moves the lifting pins 23a in the vertical direction. The lifting unit 23f is configured by, for example, a motor. The lifting unit 23f drives the motor to move the lifting pins 23a in the vertical direction.

[0063] The lifting unit 23f can adjust the distance between the upper surface 23aA of the upper end of the lifting pin 23a and the mounting surface 20S. That is, the lifting unit 23f can adjust the distance between the upper surface 23aA of the lifting pin 23a and the mounting surface 20S. By adjusting the distance between the upper surface 23aA of the lifting pin 23a and the mounting surface 20S, the electric field distribution can be adjusted. For example, the upper portion 23a1 of the lifting pin 23a is adjusted to be located near the glass substrate G. Specifically, the distance between the upper portion 23a1 of the lifting pin 23a and the mounting surface 20S on which the glass substrate G is placed is adjusted to be 0.02 mm or more and 0.2 mm or less, for example, 0.06 mm. Note that the distance is adjusted while the side surface 23aC of the inclined portion 23a2 of the lifting pin 23a is in contact with the inclined surface 23nA at the upper end of the inner holder 23n. That is, the biasing member 23c presses the inner holder 23n, and the adjustment is performed in a state where the inclined surface 23nA is in contact with the side surface 23aC and pressing the side surface 23aC.

[0064] [Power supply section 30] The power supply unit 30 supplies high-frequency power to the base material 21a of the substrate mounting table 20. The power supply unit 30 is connected to the base material 21a via a power supply line 30w. The power supply unit 30 includes high-frequency power sources 31a and 31b, and matching boxes 32a and 32b. The power supply line 30w branches into a power supply line 30wa and a power supply line 30wb. The branched power supply line 30wa is connected to the matching box 32a. The branched power supply line 30wb is connected to the matching box 32b.

[0065] The high-frequency power supply 31a is a high-frequency power supply for generating plasma. The frequency of the high-frequency power generated by the high-frequency power supply 31a is, for example, 13.56 MHz. The high-frequency power supply 31a outputs the high-frequency power to the matching box 32a. The matching box 32a matches impedance and outputs the high-frequency power for generating plasma to the substrate 21a via the power feeder 30wa and the power feeder 30w.

[0066] The high-frequency power supply 31b is a high-frequency power supply for generating a bias. The frequency of the high-frequency power generated by the high-frequency power supply 31b is, for example, 3.2 MHz. The high-frequency power supply 31b outputs the high-frequency power to the matching box 32b. The matching box 32b matches impedance and outputs the high-frequency power for generating the bias to the substrate 21a via the power feeder 30wb and the power feeder 30w.

[0067] [Gas supply unit 40] The gas supply unit 40 supplies a processing gas for processing the glass substrate G to the processing chamber 10. The gas supply unit 40 includes a processing gas supply source 41, a mass flow controller 42, and a valve 43.

[0068] The processing gas supply source 41 supplies a gas for processing the glass substrate G. The processing gas supply source 41 supplies a gas typically used in this field, such as a halogen-based gas, oxygen gas, or argon gas, as a processing gas for etching a metal film, a silicon oxide film, a silicon nitride film, or the like formed on the glass substrate G.

[0069] The mass flow controller 42 adjusts the flow rate of the processing gas supplied from the processing gas supply source 41. The processing gas whose flow rate is adjusted by the mass flow controller 42 passes through a valve 43 and is supplied to the shower head 11 via a processing gas supply pipe 40p.

[0070] [Exhaust section 50] The exhaust unit 50 exhausts the processing space 10S of the processing chamber 10. The exhaust unit 50 includes a vacuum pump 51. The vacuum pump 51 is connected to the exhaust pipe 15. The vacuum pump 51 is, for example, a turbomolecular pump.

[0071] The power supply unit 30 and the gas supply unit 40 may be collectively referred to as a plasma generation unit.

[0072] <Substrate processing method> A substrate processing method using the substrate processing apparatus 1 including the substrate mounting table 20 according to this embodiment will be described. Fig. 6 is a flow chart illustrating the substrate processing method using the substrate processing apparatus 1 including the substrate mounting table 20 according to this embodiment. The steps of the substrate processing method according to this embodiment will be described in detail with reference to Fig. 6.

[0073] (Step S10) When processing starts, the glass substrate G is loaded into the processing chamber 10 of the substrate processing apparatus 1. Specifically, with the gate valve 17 open, the glass substrate G is transferred from the substrate loading / unloading port 16 into the processing chamber 10 by a transfer device.

[0074] (Step S20) Next, the lift pins 23a are raised to protrude from the placement surface 20S. Then, the carried-in glass substrate G is placed on the support surface of the protruding lift pins 23a. Then, the glass substrate G is supported by the lift pins 23a.

[0075] The transfer device that has loaded the glass substrate G leaves the processing chamber 10. Then, the gate valve 17 is closed.

[0076] (Step S30) Next, the lift pins 23a are lowered and stored in the pin holes 21h. When the lift pins 23a are lowered and stored in the pin holes 21h, the glass substrate G is placed on the protrusions 21c and the bank portions 21d. By placing the glass substrate G on the protrusions 21c and the bank portions 21d, the glass substrate G is placed on the placement surface 20S.

[0077] (Step S40) Next, the lift pins 23a are brought into contact with the inner holder 23n. The lift pins 23a are lowered and stored in the pin holes 21h. When the lift pins 23a are lowered and stored in the pin holes 21h, the side surfaces 23aC of the lift pins 23a come into contact with the inclined surfaces 23nA of the inner holder 23n. When the side surfaces 23aC of the lift pins 23a come into contact with the inclined surfaces 23nA of the inner holder 23n, electrical continuity is established between the lift pins 23a and the inner holder 23n. In other words, when the lift pins 23a and the inner holder 23n come into contact, electrical continuity is established between the lift pins 23a and the inner holder 23n. The electrical continuity between the lift pins 23a and the inner holder 23n establishes electrical continuity between the lift pins 23a and the substrate 21a.

[0078] (Step S50) Next, plasma processing is performed on the glass substrate G. In other words, processing is performed on the glass substrate G using plasma. Specifically, the plasma processing is performed by supplying processing gas from the gas supply unit 40 and supplying power from the power supply unit 30. After the plasma processing is completed, the processing gas is exhausted by the exhaust unit 50.

[0079] (Step S60) When the plasma processing on the glass substrate G is completed, the lifting pins 23a are raised and protruded from the placement surface 20S, and the plasma-processed glass substrate G is then lifted up by the protruding lifting pins 23a.

[0080] (Step S70) Next, the glass substrate G is unloaded from the processing chamber 10 in the substrate processing apparatus 1. Specifically, with the gate valve 17 open, the transfer device is inserted into the processing chamber 10 through the substrate loading / unloading port 16. Then, the glass substrate G is placed on the transfer device and unloaded from the processing chamber 10.

[0081] The substrate mounting table 20 according to this embodiment can prevent the electric field from becoming non-uniform at the substrate mounting table 20, which acts as the lower electrode, during plasma processing. The substrate mounting table 20 according to this embodiment can prevent the electric field from becoming non-uniform, thereby preventing the substrate processing from becoming non-uniform at the positions corresponding to the lift pins.

[0082] The substrate mounting table 20 according to this embodiment functions as a lower electrode when performing plasma processing in the substrate processing apparatus 1. The substrate mounting table 20, which also serves as the lower electrode, is provided with lifting pins 23a that raise and lower a glass substrate G, which is an example of a substrate. In order to move the lifting pins 23a up and down, the base material 21a of the substrate mounting table 20 has pinholes 21h.

[0083] Since the base material 21a has the pinholes 21h, when the substrate mounting table 20 is used as a lower electrode, a non-uniform electric field may occur in the pinholes 21h. The substrate mounting table 20 according to this embodiment allows electrical conduction between the lift pins 23a housed inside the pinholes 21h and the base material 21a, thereby preventing the electric field from becoming non-uniform in the pinholes 21h.

[0084] Specifically, the substrate mounting table 20 according to this embodiment includes lift pins 23a formed of a conductive material in pin holes 21h. The substrate mounting table 20 according to this embodiment also includes holders 23b formed of a conductive material in the portions of the base material 21a that lead to the pin holes 21h. The lift pins 23a have inclined portions 23a2 in which the diameter is larger at the upper portion 23a1 and smaller at the lower portion 23a3, forming a step. The lift pins 23a and the holders 23b come into contact with each other on the side surfaces 23aC of the inclined portions 23a2 when the lift pins 23a are retracted.

[0085] Moreover, holder 23b is composed of coaxial outer holder 23m and inner holder 23n. When lifting pins 23a are stored, inclined surface 23nA on upper portion 23na of inner holder 23n comes into contact with inclined portion 23a2. Furthermore, inner holder 23n is supported by outer holder 23m via biasing member 23c. Supporting inner holder 23n by outer holder 23m via biasing member 23c allows inner holder 23n to move up and down. By allowing inner holder 23n to move up and down, the height of the tip of lifting pin 23a when stored can be adjusted.

[0086] Furthermore, by establishing electrical continuity with the substrate 21a at the middle of the lift pins 23a, the capacitance component can be made smaller than when electrical continuity with the substrate 21a is established at the bottom end of the lift pins 23a. Also, when the lift pins 23a are stored, there is ample room for adjusting the height of the lift pins 23a, making height adjustment easy.

[0087] In the above explanation, the case of processing a glass substrate G has been described, but the substrate to be processed is not limited to a glass substrate, and may be, for example, a semiconductor substrate formed from silicon, gallium, or an alloy thereof.

[0088] The substrate support table, substrate processing apparatus, and substrate processing method according to the presently disclosed embodiments are illustrative in all respects and should not be considered limiting. For example, although the above description has been given of a capacitively coupled parallel plate plasma etching apparatus as the substrate processing apparatus, other types of plasma apparatuses, such as an inductively coupled plasma apparatus, may also be used. Furthermore, the substrate processing is not limited to etching processing, and may be other substrate processing such as film formation processing or ashing processing. The above embodiments may be modified and improved in various ways without departing from the spirit and scope of the appended claims. The features described in the above embodiments may be configured differently and may be combined within a consistent range. [Explanation of symbols]

[0089] 1. Substrate processing equipment 10 Processing container 20 Board mounting table 20S Placement surface 21 Main body 21a Base material 21h pin hole 23 Substrate lifting unit 23a Lifting pin 23b Holder 23m outer holder 23n Inner holder 23nh through hole 23c biasing member 23d O-ring 30 Power supply section 40 Gas supply unit AX center axis BX center axis

Claims

1. A substrate mounting table having a mounting surface on which a substrate is placed, a substrate made of a conductor and located below the mounting surface; a lifting pin made of a conductor, which moves up and down relative to the placement surface, has a step between an upper part and a lower part, and the diameter of the upper part is larger than the diameter of the lower part; pin holes that open to the mounting surface and are formed inside the base material and through which the lift pins protrude and retract; a holder that is provided on the base material and made of a conductor, the holder including a through hole through which the lift pin passes; The holder includes an outer holder and an inner holder having a common central axis, the through hole is formed on the central axis of the inner holder so that the lift pin can move up and down; the diameter of the through hole is smaller than the diameter of the upper portion of the lift pin; the inner holder is slidably supported by the outer holder via an elastic member disposed between the inner holder and the outer holder; Board mounting table.

2. When the lift pins are housed in the pin holes, the steps of the lift pins come into contact with the upper ends of the through holes of the inner holder, and the lift pins are electrically connected to the base material via the inner holder and the outer holder. The substrate mounting table according to claim 1 .

3. a step of the lifting pin and an upper end of the inner holder in contact with each other, the step being capable of adjusting a distance between the upper end of the lifting pin and the placement surface; The substrate mounting table according to claim 2 .

4. a dielectric layer in which an electrostatic adsorption electrode is embedded is provided on the upper part of the substrate; The upper surface of the dielectric layer serves as the mounting surface. The substrate mounting table according to claim 1 .

5. an O-ring that seals between the outer holder and the upper portion of the lift pin when the lift pin is housed in the pin hole; The substrate mounting table according to claim 1 .

6. A substrate processing apparatus for processing a substrate inside a processing vessel, a substrate mounting table disposed inside the processing chamber and configured to mount the substrate thereon; a plasma generating unit that generates plasma for processing the substrate inside the processing chamber, The substrate mounting table has a mounting surface on which the substrate is mounted, a substrate made of a conductor and located below the mounting surface; a lifting pin made of a conductor, which moves up and down relative to the placement surface, has a step between an upper part and a lower part, and the diameter of the upper part is larger than the diameter of the lower part; pin holes that open to the mounting surface and are formed inside the base material and through which the lift pins protrude and retract; a holder that is provided on the base material and made of a conductor, the holder including a through hole through which the lift pin passes; The holder includes an outer holder and an inner holder having a common central axis, the through hole is formed on the central axis of the inner holder so that the lift pin can move up and down; the diameter of the through hole is smaller than the diameter of the upper portion of the lift pin; the inner holder is slidably supported by the outer holder via an elastic member disposed between the inner holder and the outer holder; Substrate processing equipment.

7. When the lift pins are housed in the pin holes, the steps of the lift pins come into contact with the upper ends of the through holes of the inner holder, and the lift pins are electrically connected to the base material via the inner holder and the outer holder. The substrate processing apparatus according to claim 6 .

8. a step of the lifting pin and an upper end of the inner holder in contact with each other, the step being capable of adjusting a distance between the upper end of the lifting pin and the placement surface; The substrate processing apparatus according to claim 7 .

9. a dielectric layer in which an electrostatic adsorption electrode is embedded is provided on the upper part of the substrate; The upper surface of the dielectric layer serves as the mounting surface. The substrate processing apparatus according to claim 6 .

10. an O-ring that seals between the outer holder and the upper portion of the lift pin when the lift pin is housed in the pin hole; The substrate processing apparatus according to claim 6 .

11. A substrate processing method for processing a substrate inside a processing container of a substrate processing apparatus, comprising: The substrate processing apparatus includes: a substrate mounting table disposed inside the processing chamber and configured to mount the substrate thereon; a plasma generating unit that generates plasma for processing the substrate inside the processing chamber, The substrate mounting table has a mounting surface on which the substrate is mounted, a substrate made of a conductor and located below the mounting surface; a lifting pin made of a conductor, which moves up and down relative to the placement surface, has a step between an upper part and a lower part, and the diameter of the upper part is larger than the diameter of the lower part; pin holes that open to the mounting surface and are formed inside the base material and through which the lift pins protrude and retract; a holder that is provided on the base material and made of a conductor, the holder including a through hole through which the lift pin passes; The holder includes an outer holder and an inner holder having a common central axis, the through hole is formed on the central axis of the inner holder so that the lift pin can move up and down; the diameter of the through hole is smaller than the diameter of the upper portion of the lift pin; the inner holder is slidably supported by the outer holder via an elastic member disposed between the inner holder and the outer holder; loading the substrate into the processing chamber; a step of raising and protruding the plurality of lift pins above the mounting surface to support the substrate; a step of lowering the lift pins and storing them in the pin holes, and placing the substrate on the placement surface; bringing the lift pins into contact with the inner holder to electrically connect the lift pins to the base material; treating the substrate with the plasma; A substrate processing method comprising:

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