Capacitor and manufacturing method thereof

The capacitor design with a strategically positioned third electrode and protective film structure addresses breakdown voltage issues by minimizing dielectric film damage, resulting in improved performance.

JP7758341B2Active Publication Date: 2025-10-22SUMITOMO ELECTRIC DEVICE INNOVATIONS
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Patent Information

Application Number
JP2022034091
Authority / Receiving Office
JP · JP
Patent Type
Patents
Current Assignee / Owner
Filing Date
2022-03-07
Publication Date
2025-10-22
Estimated Expiration
2042-03-07

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Patent Text Reader

Abstract

To provide a capacitor capable of improving withstand voltage.SOLUTION: A capacitor has a substrate 10, a first electrode 14 provided on the substrate, a dielectric film 16 provided on the first electrode, a second electrode 18 provided on the dielectric film, the periphery 53 of which is located inside the periphery 51 of the first electrode in plan view, viewed from above in the direction normal to the upper surface of the substrate, a third electrode 20 contacting the second electrode in an area 50 inside the second electrode in the plan view and separating upwardly from the first electrode and the dielectric film outside the area in the plan view, the outer circumference 54 of which is located inside the outer circumference of the first electrode and the outer circumference 52 of the dielectric film in the plan view, and a protective film 22 covering the second and third electrodes and contacting with the second and third electrodes.SELECTED DRAWING: Figure 1
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Citation Information

Patent Citations

  • Electronic part and manufacturing method thereof

    JP2007149827A

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    JP2018006620A

  • Passive-on-glass (POG) devices and methods

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    WO2018003445A1