Patterning materials and patterned films

Abstract

The present application provides a patterning material containing polysiloxane. The polysiloxane has at least one cyclic structure formed by repeated Si-O bonds and an organic group connected to the Si atom in the cyclic structure, where a portion of the Si atom in the at least one cyclic structure is substituted with a metal element, and / or the at least one organic group contains a halogen element. The patterning material of the present application has high sensitivity and high pattern resolution under X-ray irradiation of 1 nm to 15 nm, achieving a high-quality and efficient patterning process. The patterning material of the present application can be used to prepare electronic components such as chips, improving the precision and preparation efficiency of electronic components. The present application also provides a patterned film formed using the patterning material.

Description

[Technical Field]

[0001] This application claims priority to Chinese Patent Application No. 20010761964.3, entitled "Patterning Material and Patterned Film," filed with the State Intellectual Property Office of China on July 31, 2020, the entire contents of which are incorporated herein by reference.

[0002] This application relates to the field of integrated circuit manufacturing technology, and more particularly to patterning materials and patterned films formed using the patterning materials. [Background technology]

[0003] The widespread use of high-performance electronic devices has driven the continuous development of the integrated circuit manufacturing industry. With the continuous advancement of chip manufacturing processes in integrated circuits, the level of integration of chips is becoming higher and higher, the key dimensions of chips are becoming smaller and smaller, the manufacturing processes are becoming more precise, and the requirements for the properties of materials involved in the processes are also becoming higher. In particular, the patterning material (also known as photoresist or photoresist) used in the patterning process directly affects the quality of the pattern (including pattern resolution, edge roughness, etc.), which ultimately affects the precision of the integrated circuit. Summary of the Invention [Problem to be solved by the invention]

[0004] In the case of illumination system patterning technology , existing commercially available Some patterning materials are X-ray irradiation This results in low chip manufacturing efficiency. Nopa Some turning materials have large module sizes, which leads to low pattern resolution and high edge roughness of the patterns, making the quality of the formed patterns insufficient to meet the requirements of current patterning processes. Irradiation system patterning technologyTo meet this demand, it is necessary to develop patterning materials with high sensitivity and high resolution under soft X-ray irradiation conditions of 1 to 15 nm, and to realize a highly efficient, high-quality patterning process. [Means for solving the problem]

[0005] In the embodiments of the present application, a patterning material with high sensitivity and high pattern resolution under irradiation of soft X-rays of 1 nm to 15 nm is provided, enabling an efficient and high-quality patterning process to be carried out.

[0006] Specifically, in a first aspect of the present application, a patterning material containing polysiloxane is provided. The polysiloxane has at least one cyclic structure formed by repeated Si-O bonds and an organic group connected to the Si atom in the cyclic structure, with some of the Si atoms in the at least one cyclic structure being substituted with a metal element, and / or at least one organic group containing a halogen element. The patterning material employs a polysiloxane having a cyclic structure as the main material. The cyclic structure allows the polysiloxane to be controlled to a small molecular size, improving the resolution of the pattern obtained by the patterning process and reducing the pattern edge roughness. The photosensitivity of the patterning material can be improved by introducing a metal element and / or a halogen element into the molecular structure of the polysiloxane. The patterning material according to the present application can be used to prepare electronic components such as chips, resulting in high-quality patterns and improving the precision and preparation efficiency of the components.

[0007] In some embodiments of the present application, a portion of the Si atoms in at least one ring structure is replaced by a metal element. The metal element includes one or more of a transition metal element, a group 3 metal element, a group 4 metal element, a group 5 metal element, and a group 6 metal element. The metal element has an abundance of outer electrons, which can interact with soft X-ray photons to excite high-energy photoelectrons. The interaction between the high-energy photoelectrons and surrounding atoms, molecules, and chemical bonds promotes the occurrence of chemical reactions, i.e., promotes chemical changes, leading to a change in the ultimate solubility of the patterning material. The metal element may specifically be one or more of Sn, Hf, Zr, Ti, and Sb, for example.

[0008] In some other embodiments of the present application, at least one organic group includes a halogen element. The halogen element may be F, Cl, Br, or I. The halogen element has high absorption efficiency for soft X-ray photons and can improve the photosensitivity of the patterning material.

[0009] In some other embodiments of the present application, a portion of the Si atoms in the cyclic structure are substituted with a metal element, and at least one organic group contains a halogen element. The substitution of the metal element in the cyclic structure and the introduction of a halogen element into the organic group can effectively increase the photosensitivity of the patterning material due to the dual effects.

[0010] In this embodiment of the present application, the polysiloxane has a nanoscale size. Specifically, the molecular size of the polysiloxane is 0.2 nm to 5 nm. A small molecular size is beneficial for obtaining high-quality patterns with high resolution and low edge roughness. Specifically, when the molecular size is small, the size of new structures formed by the aggregation of multiple structural units during chemical change is small, and the size of new structures formed after the destruction of a single structural unit is also small, which facilitates high-precision pattern formation and improves control of pattern edge roughness.

[0011] In this embodiment of the present application, the polysiloxane has one or more cyclic structures, i.e., the polysiloxane may have a monocyclic structure or a polycyclic structure. A monocyclic structure means that there is only one cyclic structure formed by repeating Si-O bonds throughout the entire polysiloxane molecular structure. A polycyclic structure means that there are multiple cyclic structures formed by repeating Si-O bonds throughout the entire polysiloxane molecular structure. The multiple rings may be connected in different ways, and the polycyclic structure may be, in particular, a spiro structure, a fused ring structure, a polyhedral structure (i.e., a cage structure), etc.

[0012] In this embodiment of the present application, the general formula of the polysiloxane is Si a O b M c R d where M represents a metal element substituted for the Si atom in the ring structure, R represents an organic group connected to the Si atom, a and d represent integers of 1 or more, b represents an integer of 2 or more, c represents an integer of 0 or more, and a+c≧2. When d is 2 or more, multiple Rs may be the same or different organic groups, and at least one organic group R contains a halogen element.

[0013] In some embodiments of the present application, the main molecular structure of the polysiloxane is shown in formula (I): [ka] In formula (I), R is an organic group, and multiple Rs may be the same or different organic groups, n is an integer of 1 or more, some of the Si atoms in the ring structure are substituted with a metal element, and / or at least one organic group R contains a halogen element.

[0014] In some other embodiments of the present application, the main molecular structure of the polysiloxane is shown in formula (II): [ka] In formula (II), R is an organic group, and multiple Rs may be the same or different organic groups, x is an integer of 0 or greater, y is an integer of 1 or greater, z is an integer of 0 or greater, a portion of Si atoms in at least one ring structure is substituted with a metal element, and / or at least one organic group R contains a halogen element.

[0015] In some other embodiments of the present application, the main molecular structure of the polysiloxane is shown in formula (III): [ka] In formula (III), R is an organic group, m is an integer of 1 or more, a portion of the Si atoms in at least one ring structure is substituted with a metal element, and / or at least one organic group R contains a halogen element.

[0016] In this embodiment of the present application, the amount of carbon atoms in the organic group ranges from 1 to 20. With a small amount of carbon atoms, the molecular size of the siloxane compound can be better controlled.

[0017] In this embodiment of the present application, the organic group may be a substituted or unsubstituted hydrocarbyl, a substituted or unsubstituted oxyl, an organosilicon group, or an organic group containing a metal atom. The organic group may contain hydroxyl, cyano, carbonyl, carboxyl, an ether bond, an ester bond, a sulfonate ester bond, carbonic acid, an ester bond, a lactone ring, a sultone ring, a carboxylic acid anhydride, or the like. When the polysiloxane contains multiple organic groups, the multiple organic groups may be the same or different organic groups.

[0018] In this embodiment of the present application, the organic group has a reactive end group. The reactive end group can enhance the ability of the polysiloxane to undergo chemical reactions with surrounding adjacent molecules during and after exposure. In some embodiments of the present application, the end group can be a hydroxyl, carboxyl, aldehyde, amino, saturated hydrocarbyl, unsaturated hydrocarbyl, azide, sulfhydryl, or epoxy group.

[0019] In this embodiment of the present application, the elemental composition of the organic group is C e H f X g O h N i P j S o Si p M' q where X is a halogen atom, M' represents a second metal element, e is an integer of 1 or greater, f, g, h, i, j, o, p, and q are integers of 0 or greater, and (f+g+h+i+j+o+p+q)≧e. e may be an integer ranging from 1 to 20.

[0020] In this embodiment of the present application, the atom directly connected to the Si atom in the organic group is a halogen atom, an O atom, a C atom, an N atom, a P atom, an S atom, or a Si atom. In the cyclic structure, a stable chemical bond is formed between these atoms and the Si atom in the cyclic structure, and the organic group is stably bonded to the cyclic structure.

[0021] In this embodiment of the present application, the patterning material further comprises a solvent, which may be one of organic solvents such as aliphatic hydrocarbon organic solvents, aromatic hydrocarbon organic solvents, halogenated hydrocarbon organic solvents, alcohol organic solvents, ether organic solvents, ester organic solvents, ketone organic solvents, diol derivatives, acetonitrile, and pyridine, or a mixture of the aforementioned organic solvents. The solvent can dissolve the polysiloxane to form a coating material. The polysiloxane in this embodiment of the present application has good solubility and can be dissolved in most organic solvents, providing good coating properties as a patterning material. The surface of the formed thin film layer of the patterning material is smooth, the thickness of the thin film is easy to adjust, and the development conditions meet the requirements of the patterning process, making it easy to apply.

[0022] In this embodiment of the present application, the mass content of polysiloxane in the patterning material, excluding the solvent, is more than 50%. A large polysiloxane content can effectively ensure high efficiency and high quality of the patterning process.

[0023] In this embodiment of the present application, the patterning material may further contain other components as needed, and the other components may include one or more of a stabilizer, a dispersant, a photoacid, and a quencher. Adding other components with different properties can effectively improve the overall properties of the patterning material. In this embodiment of the present application, when the main material is 100 parts by weight, the other components may be 0.1 to 40 parts by weight.

[0024] In this embodiment of the present application, the patterning material is sensitive to 1 nm to 15 nm X-rays, and the exposure energy required to act on the patterning material during patterning is less than 100 mJ / cm 2 High sensitivity allows patterning of the patterning material at low exposure energies, and patterning can be achieved by using thin layers of the patterning material, resulting in shorter exposure times and improved patterning efficiency.

[0025] In a second aspect, an embodiment of the present application further provides a patterned film, wherein the patterned film is formed by using the patterning material of the first aspect of the embodiment of the present application. The patterned film may be used as a high-precision mask plate in a patterning process for manufacturing integrated circuits, and the pattern of the patterned film may be transferred to a substrate such as a silicon wafer by an etching method, forming a preset pattern on the substrate.

[0026] The patterning material in this embodiment of the present application has high sensitivity to light in the X-ray wavelength range of 1 nm to 15 nm, and the molecular size may be controlled to be small. Therefore, when the patterning material provided in this embodiment of the present application is irradiated with soft X-rays of 1 nm to 15 nm as an exposure light source, the pattern of the patterned film obtained by the patterning process steps such as drying and development has high resolution and low edge roughness. Specifically, in this embodiment of the present application, the resolution of the pattern of the patterned film is within the range of 0.2 nm to 100 nm. The edge roughness is within the range of 2% to 30% of the resolution.

[0027] In a third aspect of the present application, there is further provided a patterning method, the method comprising: Coating the patterning material according to the first aspect of the present embodiment onto a substrate to form a patterning material thin film layer on the substrate; exposing the patterning material thin film layer to an exposure light source using a photomask; developing the exposed thin film layer of patterning material with a developer to form a patterned film on the substrate; It has.

[0028] In this embodiment of the present application, the patterning method further comprises the steps of etching the substrate after development and transferring the pattern of the patterned film to the substrate. In this embodiment of the present application, the substrate may be a silicon wafer, or may be a silicon substrate with a metal layer, a dielectric layer, a surface modification layer, or an accessory layer disposed thereon.

[0029] In this embodiment of the present application, the patterning method further comprises the step of baking the patterning material thin film layer after exposure and before development, the baking temperature being between 60° C. and 200° C. for a time period between 20 and 120 seconds, which can promote further completion of uncompleted chemical reactions in the thin film layer.

[0030] In this embodiment of the present application, the exposure light source is X-rays of 1 nm to 15 nm. In this embodiment of the present application, the exposure energy of the exposure light source is 100 mJ / cm 2 is less than.

[0031] In one embodiment of the present application, there is further provided a method for preparing an electronic component, the method including the patterning method according to the third aspect of the present application. Here, the electronic component has a pattern formed by a patterned film. The electronic component has a chip or the like.

[0032] The patterning material provided in the embodiment of the present application uses a polysiloxane having a specific structure as the main material. The polysiloxane having the specific structure has high sensitivity and high etching resistance to X-rays of 1 nm to 15 nm, and has a small molecular size. Therefore, when the patterning material in the embodiment of the present application is used in a pattern formation process, a high-quality pattern with high resolution and low edge roughness can be formed under irradiation with an exposure light source of soft X-rays of 1 nm to 15 nm. [Brief explanation of the drawings]

[0033] [Figure 1]FIG. 1 is a schematic flow diagram of a patterning process according to an embodiment of the present application. [Figure 2] FIG. 10 is a schematic flow diagram of a patterning process according to another embodiment of the present application. DETAILED DESCRIPTION OF THE INVENTION

[0034] Hereinafter, embodiments of the present application will be described with reference to the accompanying drawings of the embodiments of the present application.

[0035] The most important process step in current chip manufacturing is the patterning process step, which is as follows: through a photomask plate; Patterning material thin film A light source is irradiated onto the surface of the substrate on which the layer is formed, and in the exposed area Patterning Materials in the exposed or unexposed areas. Patterning Materials The development technology (the former is called positive type) Patterning Materials , the latter is called negative type Patterning Materials The pattern on the photomask plate is removed by dissolving it using a solvent called Thin patterning material The pattern is then copied onto a film, and finally, the pattern is transferred onto a substrate using etching technology. Use of an exposure light source: Soft X-rays of 1 to 15 nm are the most important technological element in the patterning process, but existing patterning materials cannot meet the requirements for both high sensitivity and high pattern resolution under this exposure light source. In light of this, one embodiment of the present application provides a patterning material that has high sensitivity and high pattern resolution under irradiation with soft X-rays of 1 to 15 nm, enabling an efficient and high-quality patterning process.

[0036] In particular, the patterning material provided in this embodiment of the present application includes a polysiloxane. The polysiloxane has at least one cyclic structure formed by repeating Si-O bonds and an organic group connected to the Si atoms in the cyclic structure. A portion of the Si atoms in the at least one cyclic structure is substituted with a metal element, and / or the at least one organic group includes a halogen element. The cyclic structure formed by repeating Si-O bonds is a cyclic structure formed by alternating bonds between silicon atoms and oxygen atoms.

[0037] In one embodiment of the present application, a portion of the Si atoms in at least one cyclic structure are replaced by a metal element. Specifically, the Si atoms in the cyclic structure are replaced by the metal element, and no halogen is introduced into the organic group. The metal element includes one or more of a transition metal element, a Group 3 metal element, a Group 4 metal element, a Group 5 metal element, and a Group 6 metal element. The metal element has abundant outer shell electrons, which can interact with soft X-ray photons to excite high-energy photoelectrons. The interaction of the high-energy photoelectrons with surrounding atoms, molecules, and chemical bonds promotes the occurrence of chemical reactions, i.e., promotes chemical changes and changes the final solubility of the patterning material. The metal element may be one or more of Sn, Hf, Zr, Ti, and Sb, for example.

[0038] In another embodiment of the present application, at least one organic group contains a halogen element. In particular, the halogen element is introduced into the organic group, and no metal element substitution occurs on the Si atom in the cyclic structure. At least one organic group in all cyclic structures of the polysiloxane molecule contains a halogen element. By introducing a halogen element, the sensitivity of the patterning material under a soft X-ray exposure light source can be improved. In particular, halogen elements have a higher absorption efficiency for photons in the soft X-ray wavelength range than C, H, O, and Si elements under soft X-ray exposure conditions. When a photon is absorbed by a halogen element and an internal electron is excited, an electron hole is formed, and in the process of energy dissipation, further free radicals are formed, and a large number of high-energy free electrons are formed (the electron energy is usually between 10 eV and 100 eV, depending on the incident photon energy). The free radicals and high-energy free electrons interact with surrounding chemical bonds and chemical groups, resulting in the breaking and creation of new chemical bonds, which in turn changes the chemical properties of the molecule and even its solubility, thereby providing the basic mechanism of action for the patterning material. In this embodiment of the present application, at least one organic group connected to the Si atom contains a halogen element. When the polysiloxane has multiple organic groups, some or all of the organic groups may contain a halogen element. Compared to the introduction of a metal element solution, the introduction of a halogen element can avoid the risk of substrate contamination that may occur due to the introduction of a metal element.

[0039] In some other embodiments of the present application, some of the Si atoms in the cyclic structure are substituted with a metal element, and at least one organic group contains a halogen element. The substitution of the metal element in the cyclic structure and the introduction of a halogen element into the organic group can effectively increase the photosensitivity of the patterning material due to a dual effect.

[0040] In an embodiment of the present application, the polysiloxane has a nanoscale size. In one implementation, the molecular size of the polysiloxane is 0.2 nm to 5 nm. In other embodiments, the molecular size of the polysiloxane is 0.5 nm to 4 nm, 1 nm to 3 nm, or 2 nm to 2.5 nm. A small molecular size is beneficial for obtaining high-quality patterns with high resolution and low edge roughness. In particular, a small molecular size reduces the size of new structures formed by the aggregation of multiple structural units during chemical conversion, and reduces the size of new structures formed after the destruction of single structural units, thereby facilitating the formation of high-precision patterns and improving the control of pattern edge roughness. In this embodiment of the present application, the molecular weight of the polysiloxane may be 130 to 400,000.

[0041] In this embodiment of the present application, the polysiloxane may have one or more ring structures. In particular, the polysiloxane may have a monocyclic structure or a polycyclic structure. A monocyclic structure means that there is only one ring structure formed by repeating Si-O bonds throughout the entire polysiloxane molecular structure. A polycyclic structure means that there are multiple ring structures formed by repeating Si-O bonds throughout the entire polysiloxane molecular structure. The multiple rings may be connected in different ways, and the polycyclic structure may be, in particular, a spiro structure, a condensed ring structure, a polyhedral structure (i.e., a cage structure), etc.

[0042] In this embodiment of the present application, one or more Si atoms are connected to at least one organic group in the cyclic structure. In particular, only one Si atom may be connected to an organic group in the cyclic structure, or all of the Si atoms may be connected to organic groups, and each Si atom may be connected to one organic group or two organic groups. The solubility of the patterning material can be increased by increasing the amount of organic groups.

[0043] In one embodiment of the present application, the polysiloxane has a single ring structure, and the main molecular structure of the polysiloxane is shown in formula (I): [ka] In formula (I), R is an organic group, and multiple Rs may be the same or different organic groups; n is an integer of 1 or greater; some of the Si atoms in the ring structure are substituted with a metal element; and / or at least one organic group R contains a halogen element. One or more of the organic groups in the multiple organic groups may contain a halogen element. In some embodiments, n may be an integer ranging from 2 to 8, specifically, for example, 2, 3, 4, 5, 6, 7, or 8.

[0044] In some other embodiments of the present application, the polysiloxane has a polycyclic structure, and the main molecular structure of the polysiloxane is represented by formula (II): [ka] In formula (II), R is an organic group, and the multiple Rs may be the same or different organic groups; x is an integer of 0 or greater, y is an integer of 1 or greater, and z is an integer of 0 or greater; a portion of the Si atoms in at least one ring structure is substituted with a metal element, and / or at least one organic group R contains a halogen element. When the polysiloxane has a polycyclic structure, it can be understood that a portion of the Si atoms in some or all of the ring structures may be substituted with a metal element. Similarly, one or more of the multiple organic groups may contain a halogen element. In some embodiments, x may be an integer ranging from 1 to 3, specifically 1, 2, or 3; y may be an integer ranging from 1 to 5, specifically 1, 2, 3, 4, or 5; and z may be an integer ranging from 1 to 5, specifically 1, 2, 3, 4, or 5.

[0045] In some other embodiments of the present application, the polysiloxane has a single ring structure or multiple ring structures, and the main molecular structure of the polysiloxane is represented by formula (III): [ka] In formula (III), R is an organic group, m is an integer of 1 or greater, a portion of the Si atoms in at least one ring structure is replaced with a metal element, and / or at least one organic group R contains a halogen element. When the polysiloxane has a polycyclic structure, it can be understood that a portion of the Si atoms in some or all of the ring structures can be replaced with a metal element. Similarly, one or more of the organic groups can contain a halogen element. In some embodiments, m can be an integer ranging from 2 to 8, and the polysiloxane has a polycyclic structure, specifically, m is 2, 3, 4, 5, 6, 7, or 8.

[0046] In some embodiments of the present application, when the polysiloxane has one or more cyclic structures formed by repeating Si-O bonds, it may have an incomplete loop structure formed by repeating Si-O bonds. This is equivalent to the silicon-oxygen bond being removed in some cyclic structures in the polycyclic polysiloxanes shown in formula (II) and formula (III). Specifically, polysiloxanes having this structure include, but are not limited to, polysiloxanes shown in formula (IV): [ka] In formula (IV), R is an organic group, and multiple Rs may be the same or different organic groups, and a portion of the Si atoms in at least one ring structure is substituted with a metal element, and / or at least one organic group R contains a halogen element.

[0047] In this embodiment of the present application, the general formula of the polysiloxane is Si a O b M c R dwherein M represents a metal element substituted for the Si atom in the ring structure, R represents an organic group connected to the Si atom, a and d represent integers of 1 or greater, b represents an integer of 2 or greater, c represents an integer of 0 or greater, and a+c≧2. When d is 2 or greater, multiple Rs may be the same or different groups. In some embodiments of the present application, a+c≧3, and b is an integer of 3 or greater.

[0048] In this embodiment of the present application, the elemental composition of the organic group is C e H f X g O h N i P j S o Si p M' q where X is a halogen atom, M' represents a second metal element, e is an integer of 1 or greater, and f, g, h, i, j, o, p, and q are integers of 0 or greater, and (f+g+h+i+j+o+p+q)≧e. M' may be one or more of a transition metal element, a Group 3 metal element, a Group 4 metal element, a Group 5 metal element, and a Group 6 metal element. In particular, M' may be, for example, Sn, Hf, Zr, Ti, or Sb. In this embodiment of the present application, in order to better control the overall molecular size of the polysiloxane, the amount of carbon atoms in the organic group may be controlled within a range of 1 to 20, i.e., e may be an integer ranging from 1 to 20.

[0049] In this embodiment of the present application, the organic group may be a substituted or unsubstituted hydrocarbyl, a substituted or unsubstituted oxyl, an organosilicon group, or an organic group containing a metal atom. In this embodiment of the present application, the organic group may contain hydroxyl, cyano, carbonyl, carboxyl, an ether bond, an ester bond, a sulfonate ester bond, carbonic acid, a lactone ring, a sultone ring, a carboxylic acid anhydride, or the like. In one embodiment of the present application, the polysiloxane contains multiple organic groups, and the multiple organic groups may be the same or different substituted or unsubstituted hydrocarbyl, a substituted or unsubstituted oxyl, an organosilicon group, or an organic group containing a metal atom. In this application, the substituted or unsubstituted hydrocarbyl may be a linear or branched hydrocarbyl, a saturated or unsaturated hydrocarbyl, or a cyclic hydrocarbyl having one or more cycles. Specifically, the substituted or unsubstituted hydrocarbyl may be a substituted or unsubstituted alkyl, a substituted or unsubstituted alkenyl, a substituted or unsubstituted alkynyl, a substituted or unsubstituted aryl (e.g., phenyl or naphthyl), a substituted or unsubstituted aralkyl (e.g., benzyl or phenethyl), a substituted or unsubstituted arylalkenyl, a substituted or unsubstituted arylenealkyne, a substituted or unsubstituted alkaryl (tolyl), a substituted or unsubstituted arylaryl, a substituted or unsubstituted alkynylaryl, etc. The substituent in the substituted hydrocarbyl may be a halogen atom, an oxygen atom, an oxygen atom-containing group, a nitrogen atom-containing group, a sulfur atom-containing group, etc., and may form, for example, a hydroxyl, an ether, an ester, an acid anhydride, an aldehyde, a ketone, a carboxylic acid, etc. The substituted hydrocarbyl may be, for example, a hydrocarbyl halide, an aldehyde-based alkyl, a carboxyalkyl, a hydroxyalkyl, an ester-based alkyl, an acyl-alkyl, an aminoalkyl, an alkyl azide, or a mercaptoalkyl. Halogenated hydrocarbons include halogenated alkyls, halogenated alkenyls, halogenated alkynyls, halogenated aryls, halogenated aralkyls, halogenated arylalkenyls, or halogenated arylenealkynes.In fact, the substituted hydrocarbyl may also include a plurality of different substituents as described above, such as aldehyde-based alkyl halides, acyl-alkyl halides, mercaptoalkyl halides, and aminoalkyl halides. In the present application, the substituted or unsubstituted oxyl may be, in particular, a substituted or unsubstituted alkoxy, a substituted or unsubstituted allyloxy, a substituted or unsubstituted epoxy group, a substituted or unsubstituted aromatic epoxy group, etc. The substituent in the substituted oxyl may be a halogen atom, an oxygen atom, an oxygen-containing group, a nitrogen-containing group, a sulfur-containing group, etc. The substituted oxyl may be, for example, a halogenated oxyl. The halogenated oxyl may be, for example, a halogenated alkoxy, a halogenated allyloxy, a halogenated epoxy group, or a halogenated aromatic epoxy group.

[0050] In this embodiment of the present application, the chemical group containing a halogen atom may be an alkyl halide, an alkenyl halide, an alkynyl halide, an aryl halide, an aralkyl halide, an arylalkenyl halide, an arylenealkyne halide, an aldehydic alkyl halide, an acyl-alkyl halide, a mercaptoalkyl halide, an aminoalkyl halide, an alkoxy halide, an allyloxy halide, an epoxy halide, an aromatic epoxy halide, or another organic group containing a halogen atom.

[0051] In the aforementioned halogen group, the halogen may be F, Cl, Br, or I. The halogen group can introduce halogen into the molecular structure of the polysiloxane, and the photosensitivity of the patterning material can be improved by utilizing the high absorption efficiency of the halogen element to soft X-ray photons. In another embodiment, the substituted hydrocarbyl may also include another substituent.

[0052] In this embodiment of the present application, the organic group comprises a reactive terminal group. In some embodiments of the present application, the terminal group may be, for example, a hydroxyl, carboxyl, aldehyde group, amino, saturated hydrocarbyl, unsaturated hydrocarbyl, azide, sulfhydryl, or epoxy group. The reactive terminal group can enhance the ability of the polysiloxane to undergo chemical reactions with surrounding adjacent molecules during and after exposure.

[0053] In some implementations of the present application, the organic group R may be, for example, but not limited to, an alkyl, alkenyl, alkynyl, aryl having 1 to 20 carbon atoms, or the following groups: [ka] In this embodiment of the present application, the atom directly connected to the Si atom in the organic group may be a halogen atom, an O atom, a C atom, an N atom, a P atom, an S atom, or a Si atom. In the ring structure, a stable chemical bond is formed between these atoms and the Si atom, and the organic group is stably bonded to the ring structure.

[0054] In some embodiments of the present application, the main molecular structure of the polysiloxane may be represented by Formulas (A) through (G): [ka] In formulas (A) to (G), R is an organic group, and multiple Rs may be the same or different organic groups. In formulas (A) to (G), a portion of the Si atoms in at least one cyclic structure is substituted with a metal element, and / or at least one organic group contains a halogen element. When multiple cyclic structures are included, it can be understood that some Si atoms in some or all of the cyclic structures may be substituted with a metal element. Similarly, when multiple organic groups are included, one or more of the organic groups may contain a halogen element.

[0055] In this embodiment of the present application, the patterning material further comprises a solvent, which may be one or more of organic solvents, such as aliphatic hydrocarbon organic solvents, aromatic hydrocarbon organic solvents, alicyclic hydrocarbon organic solvents, halogenated hydrocarbon organic solvents, alcohol organic solvents, ether organic solvents, ester organic solvents, ketone organic solvents, diol derivatives, acetonitrile, and pyridine. The solvent can dissolve the polysiloxane to form a coating material. The polysiloxane in this embodiment of the present application has good solubility and can be dissolved in most organic solvents, providing good coating properties as a patterning material. The surface of the formed thin film layer of the patterning material is smooth, the thickness of the thin film is easy to adjust, and the development conditions meet the requirements of the patterning process, making it easy to apply.

[0056] In this embodiment of the present application, the mass of polysiloxane in the patterning material, excluding the solvent, is greater than 50%. A high polysiloxane content can effectively ensure high efficiency and high quality of the patterning process. Specifically, the mass of polysiloxane in the patterning material, excluding the solvent, can be 55% to 99%, 60% to 90%, or 70% to 80%.

[0057] In this embodiment of the present application, the patterning material may further include other components as needed, and the other components may include one or more of a stabilizer, a dispersant, a photoacid, and a quencher. In this embodiment of the present application, when the main material is 100 parts by weight, the other components may be 0.1 to 40 parts by weight. In some embodiments, when the main material is 100 parts by weight, the other components may be 1 to 30 parts by weight, or 5 to 20 parts by weight.

[0058] In this embodiment of the present application, the patterning material is sensitive to 1 nm to 15 nm X-rays, and the exposure energy required to act on the patterning material during patterning is less than 100 mJ / cm 2High sensitivity allows patterning of the patterning material with low exposure energy, allows patterning to be performed using thin layers of the patterning material, allows for shorter exposure times, and improves patterning efficiency. In this embodiment of the present application, the patterning material has high sensitivity to X-ray sources having any wavelength in the range of 1 nm to 15 nm, and the wavelength may be specifically 1 nm to 13.5 nm, 1 nm to 10 nm, 1 nm to 7 nm, and 3 nm to 5 nm. In some embodiments of the present application, the exposure energy required to affect the patterning material is 0.5 mJ / cm or less. 2 to 50 mJ / cm 2 may be.

[0059] In this embodiment of the present application, different compound raw materials may be selected based on the different structures of the polysiloxane, and different methods may be used for preparation. The preparation method is simple and can be used for industrial production. In particular, one or more siloxane monomers may be used for condensation under acidic or alkaline conditions. The synthetic monomer for the polysiloxane of the present application may be selected from hydrogen alkoxysilane (a) or trichlorosilane (d) having a single organic ligand functional group, organo-bis-alkoxysilane (b) or dichlorosilane (e) having two organic ligand functional groups, triallyl-alkoxysilane (c) or chlorosilane (f) having three organic ligand functional groups, or a mixture of two or three of the aforementioned monomers. [ka] In formulas (a) to (f), R is an organic group directly connected to Si, and multiple R's may be the same or different organic groups. In formulas (a) to (c), R' may be, but is not limited to, an alkyl having 1 to 20 carbon atoms.

[0060] As an example, when synthesis is performed under acidic conditions, the polysiloxane production method of the present application may be carried out as follows: anhydrous ferric trichloride is added to a round-bottom flask under mechanical stirring, followed by concentrated hydrochloric acid, methanol, petroleum ether, and dichloromethane. One or more siloxane monomers (which may be ethoxysilane or chlorosilane) are selected, with the selection and molar ratio of the monomers being determined by the final material structure. The monomers are uniformly dissolved in petroleum ether at a volume ratio of 5 to 20 times the volume of the siloxane. The solution containing the monomers is placed in a constant-pressure dropping funnel. The solution is added dropwise to a round-bottom flask reactor within 5 to 20 hours. Continuous stirring and reaction are carried out at room temperature for 15 to 48 hours, followed by reaction at 60°C for 5 to 15 hours. After sufficient reaction, filtration and solution separation are carried out, and the upper organic layer is transferred to a round-bottom flask. Sodium carbonate and calcium chloride are added, the acid is removed, and the mixture is stirred for 10 to 20 hours. The filtrate is then filtered, the pressure is reduced, the filtrate is concentrated using a rotary evaporator, and the filtrate is placed in a refrigerator at 4°C for refrigeration crystallization. The precipitated crystals are recrystallized using a mixed solution of dichloromethane and ethanol, and purified to obtain the target product, which has at least one cyclic structure formed by repeated Si-O bonds and an organic group in the monomer.

[0061] In this embodiment of the present application, the synthesized polysiloxane can be further modified to selectively modify the end groups, and polysiloxanes with multiple different organic groups can be prepared. Alternatively, polysiloxanes such as octavinyl-T8-silsesquioxane can be directly purchased from the market, and the vinyl organic group can be used to react with hydrogen siloxane groups under Pt catalyst, and hydrogen siloxanes modified with different organic groups can be selected and reacted with vinyl to modify the end groups on the vinyl.

[0062] The patterning material in this embodiment of the present application uses polysiloxane as the main material, and the polysiloxane has a cyclic structure. The cyclic structure allows for good control of the molecular size, allowing the polysiloxane to have a small molecular size, thereby improving the resolution of the pattern obtained using the patterning process and reducing the pattern edge roughness. This method avoids the problems of poor quality and insufficient resolution of the formed pattern due to the large molecular size of the patterning material, resulting in large pattern edge roughness. Furthermore, by introducing metal elements and / or halogen elements into the molecular structure of the polysiloxane, the photosensitivity of the patterning material can be improved, making the patterning material suitable for soft X-ray exposure light sources in the 1 nm to 15 nm range. High exposure efficiency can be achieved by using low exposure energy. The patterning material in this embodiment of the present application can be used to prepare electronic components such as chips, resulting in high-quality patterns and improved component precision and preparation efficiency.

[0063] Correspondingly, one embodiment of the present application further provides a patterned film formed by using the patterning material of the present application. The patterned film may be used as a high-precision mask plate in a patterning process for manufacturing integrated circuits. The pattern of the patterned film may be transferred to a substrate, such as a silicon wafer, by etching, forming a preset pattern on the substrate. The patterning material of the present application may have high sensitivity to light in the wavelength range of 1 nm to 15 nm and may be controlled to have a small molecular size. Therefore, when the patterning material provided in the present application is irradiated with soft X-rays of 1 nm to 15 nm as an exposure light source, the pattern of the patterned film obtained by the patterning process steps, such as drying and development, has high resolution and low edge roughness. In particular, in this embodiment of the present application, the resolution of the pattern on the patterned film is within the range of 0.2 nm to 100 nm. The edge roughness is 2% to 30% of the resolution. In some implementations, the resolution of the pattern may be 3 nm to 80 nm. In some other embodiments, the pattern resolution may be 5 nm to 50 nm, hi some other embodiments, the pattern resolution may be 10 nm to 20 nm.

[0064] In one embodiment of the present application, there is further provided a patterning method, as shown in Figures 1 and 2, the patterning process of the patterning method includes the following steps:

[0065] S101: The patterning material in the embodiment of the present application is coated on a substrate to form a thin film layer of the patterning material on the substrate.

[0066] Specifically, in this embodiment, one or more polysiloxanes may be mixed in a suitable ratio and dissolved in a suitable solvent to form a solution of a specific concentration. One or more other components, such as stabilizers, dispersants, photoacids, and quenchers, may be optionally added to the solution. In this embodiment, the solvent may be one or more organic solvents, such as aliphatic hydrocarbon organic solvents, aromatic hydrocarbon organic solvents, alicyclic hydrocarbon organic solvents, halogenated hydrocarbon organic solvents, alcohol organic solvents, ether organic solvents, ester organic solvents, ketone organic solvents, diol derivatives, acetonitrile, and pyridine. In this embodiment, when the polysiloxane is 100 parts by weight, the other components, excluding the solvent, may be 0.1 to 40 parts by weight. The amount of solvent added can be adjusted based on the required thickness of the thin film layer. Typically, a higher concentration of the solution corresponds to a thicker thin film layer.

[0067] In this embodiment of the present application, the substrate may be selected based on specific requirements and may be a silicon wafer or a silicon wafer coated with another coating layer. The other coating layer may be an anti-reflective coating layer, an anti-etch coating layer, an epitaxial layer, a metal layer, a dielectric layer, a surface modification layer, or an accessory layer. Typically, the other coating layer may be obtained by pre-treating the substrate, and the pre-treatment method is to perform surface hydrophilic activation on the silicon wafer substrate by using O2 plasma, or to perform surface hydrophobic treatment on the substrate by using hexamethyldisilazane (HMDS), or to add a bottom anti-reflective coating (bottom anti-reflective coating, BARC), spin-on carbon (spin-on carbon, SOC), and spin-on glass (spin-on glass, SOG).

[0068] Based on the size of the substrate, a specific volume of the solution is coated onto the substrate using a spin-coating process to form a patterning material thin film layer with a thickness of less than 100 nm. In particular, the thickness of the thin film layer may be, for example, 0.2 nm to 40 nm. The surface roughness of the thin film layer may be less than 2 nm. Because the polysiloxane in the present embodiment has high sensitivity, a small thickness may be set and high-quality patterning may be achieved.

[0069] In this embodiment of the present application, after spin-coating and before exposure, the solvent remaining in the patterning material thin film layer may be selectively removed by using a baking process, where the baking temperature may be between 60°C and 200°C, and the baking time is between 20 seconds and 120 seconds.

[0070] S102: The patterning material thin film layer is exposed to an exposure light source using a photomask.

[0071] Specifically, the patterning material thin film layer may be selectively irradiated with any single wavelength or mixed wavelength light within the X-ray range of 1 nm to 15 nm after reflection from a mask plate, and the pattern on the mask plate is transferred to the patterning material thin film layer. The exposure energy of the exposure light source is 100 mJ / cm. 2 After the patterning material thin film layer is selectively exposed to a soft X-ray source in the wavelength range of 1 nm to 15 nm, the exposed portions undergo a chemical reaction and change in solubility.

[0072] In this embodiment of the present application, the patterning material thin film layer is optionally baked after exposure and before development, at a baking temperature between 60° C. and 200° C. for a time between 20 and 120 seconds, which can promote further completion of incomplete chemical reactions in the thin film layer.

[0073] S103: The exposed patterning material thin film layer is developed using a developer to form a patterned thin film on the substrate.

[0074] The exposed portions of the patterning material thin film layer undergo chemical changes, changing their solubility, and are then washed away with a developer. The washing time ranges from 10 to 300 seconds. The washing step may be a single-step or multi-step washing step. After the washing step, the irradiated portions of the patterning material thin film layer are washed away and developed in a positive tone, forming a positive-tone pattern. A patterning material such as that shown in FIG. 1 is referred to as a positive-tone patterning material. If the irradiated portions are not washed away and are developed in a negative tone, a negative-tone pattern is formed. A patterning material such as that shown in FIG. 2 is referred to as a negative-tone patterning material.

[0075] In the development process, a suitable developer may be selected based on the characteristics of the patterning material. The developer may be selected from organic solutions, inorganic solutions, pure solvents, mixed solvents, solvents containing additives, etc. Specifically, in some embodiments of the present application, the developer may be a 0.5% to 5% aqueous solution of tetramethylammonium hydroxide (TMAH) or an organic solvent such as a ketone organic solvent, an alcohol organic solvent, an ether organic solvent, an ester organic solvent, a lactone organic solvent, or a high-boiling alcohol organic solvent. Ketone organic solvents may be, for example, cyclohexanone and methyl-2-amyl ketone. Alcohol organic solvents may be, for example, 3-methoxybutanol, 3-methyl-3-methoxybutanol, 1-methoxy-2-propanol, 1-ethoxyl-2-propanol, and diacetone alcohol. Ether organic solvents may be, for example, propylene glycol monomethyl ether, ethylene glycol monomethyl ether, propylene glycol monoethyl ether, ethylene glycol monoethyl ether, propylene glycol dimethyl ether, and diethylene glycol dimethyl ether. The ester organic solvent may be, for example, propylene glycol monomethyl ether acetate (PGMEA), propylene glycol monoethyl ether acetate, ethyl lactate, ethyl pyruvate, butyl acetate, 3-ethoxylmethylpropionate, 3-ethoxylethylpropionate, tert-butyl acetate, tert-butyl propionate, and propylene glycol mono-tert-butyl ether acetate. The lactone organic solvent may be, for example, γ-butyrolactone. The high-boiling alcohol solvent may be, for example, diethylene glycol, propylene glycol, glycerin, 1,4-butanediol, or 1,3-butanediol. The developer may be a mixture of one or more of the aforementioned solvents. The contact time between the developer solution and the developed exposed thin film layer may be 20 to 120 seconds. After development, a water rinse process may optionally be added, and the rinse time may be 20 to 120 seconds.A baking process may also be optionally added, and the baking temperature may be between 60°C and 200°C, and the baking time may be between 20 seconds and 120 seconds.

[0076] The resulting pattern resolution after development is between 0.2 nm and 100 nm, and the edge roughness is between 2% and 30% of the pattern resolution. In some embodiments of the present application, patterns with a resolution of 0.2 nm to 20 nm may be obtained.

[0077] S104: After development, the substrate is etched to transfer the pattern of the patterned thin film onto the substrate.

[0078] The pattern formed by the patterning material forms a selective protection function for the underlying substrate material in the etching step, and the patterning material and the unprotected substrate material are etched by etching under specific conditions, and the etching rate of the position protected by the patterning material is lower than the etching rate of the unprotected position, and finally, a pattern is formed on the substrate material. In the etching process, specifically, HF etching, ion etching, or ion implantation process may be performed to transfer the pattern onto the substrate.

[0079] An embodiment of the present application further provides a method for preparing an electronic component, including the patterning method of an embodiment of the present application. Here, the electronic component has a pattern formed by a patterned film. The electronic component may include a chip, etc. In the process of preparing the chip, other functional layers may be prepared after the patterning process is completed.

[0080] Hereinafter, specific embodiments are used to describe in detail the technical solutions in the embodiments of the present application.

[0081] (Embodiment 1) (1) 1 mole of p-fluorobenzodialdehyde, 2.4 moles of methyltriphenylphosphonium bromide, and 2.9 moles of potassium tert-butoxide are added to anhydrous and oxygen-free tetrahydrofuran (THF) solvent and stirred for 4 hours under argon protection at room temperature. After rotary evaporation, extraction with water and diethyl ether is carried out. The organic layer is dried using magnesium sulfate (MgSO4), dissolved in n-hexane, and the liquid obtained by rotary evaporation and concentration is purified through a chromatographic column to obtain p-fluorobenzenediene.

[0082] (2) 1.2 mol of trichlorosilane and 1 mol of p-fluorobenzenediene obtained in step (1) are refluxed in THF solvent at 80°C for 6 hours under the condition of 0.04 mol of HPtCl catalyst. After distillation under reduced pressure, trichlorosilane monomer is obtained.

[0083] Formula (V) shows the synthetic route for steps (1) and (2): [ka] (3) 1.6 mol of anhydrous FeCl3 and 2 mol of concentrated hydrochloric acid are added to a three-neck flask, mechanically stirred, and dissolved in a 2:4:1 volumetric ratio mixture of methanol, petroleum ether, and dichloromethane. 1 mol of trichlorosilane monomer obtained in step (2) is dissolved to prepare a 10% volumetric petroleum ether solution. The monomer solution is added dropwise to the three-neck flask via a pressure-controlled funnel within 10 hours, stirred at room temperature for 24 hours, and then reacted at 60°C for 10 hours. After the reaction is complete, filtration and solution separation are performed, and the upper organic layer is transferred to an Erlenmeyer flask. Sodium carbonate and calcium chloride are added to remove the acid, stirred for 12 hours, filtered, and the filtrate is reduced pressure and concentrated using a rotary evaporator. It is then placed in a refrigerator at 4°C for refrigeration and crystallized. The precipitated crystals are recrystallized using a mixture of dichloromethane and ethanol, and purified to obtain polysiloxane. Formula (VI) shows the reaction pathway. [ka] The prepared polysiloxanes have octa(cyclohexylsilsesquioxane) as the main structure, and p-fluorostyrene substituents are introduced. The molecular size is 0.3 to 0.7 nm.

[0084] (4) The p-fluorostyrene octa(cyclohexylsilsesquioxane) prepared in step (3) is dissolved in isopropanol to prepare a solution with a concentration of 10 mg / mL. This solution is filtered using a polytetrafluoroethylene (PTFE) filter membrane and spin-coated onto a silicon wafer substrate treated with HMDS to form a patterning material thin film layer with a thickness of 10 to 30 nm. Under the protection of a mask plate, the surface of the patterning material thin film layer is selectively irradiated with 13.5 nm soft X-rays at low energy. After exposure and development, the patterning material thin film layer can form patterned structures of less than 30 nm. This meets the requirements for high sensitivity and high pattern resolution. This is because the polysiloxane of the present embodiment has a large number of fluorine atoms, and therefore has high sensitivity to soft X-rays and can absorb more soft X-ray photons. The double bond connected to the fluorophenyl can promote the polymerization reaction using a free radical reaction, thereby improving the efficiency of the photochemical reaction and further improving the photosensitivity of the patterning material. Specifically, in the exposure process, after irradiation with light of 13.5 nm wavelength, photons are mainly absorbed by the fluorobenzene ring, and high-energy photoelectrons are excited. The photoelectrons further initiate double bond free radical polymerization and further polymerization of the nanostructure. Formula (VII) shows the reaction process. [ka] The hexahedron represents the conformation of the main octa(cyclohexylsilsesquioxane) and R represents p-fluorostyrene: [ka] (5) After selective irradiation with light, the patterning material thin film layer undergoes a change in solubility, and after washing with a developer consisting of a mixed solvent of isopropanol and water, the unirradiated parts are washed away and the irradiated parts are retained, forming a negative pattern, thereby completing the patterning process.

[0085] (6) The silicon wafer substrate is etched by an oxygen ion etching step to form a negative pattern on the silicon wafer substrate.

[0086] (Embodiment 2) The p-fluorostyrene octa(cyclohexylsilsesquioxane) prepared in embodiment 1 is used as a modified raw material to obtain modified polysiloxane. The specific steps include:

[0087] (1) 10 moles of dimethylthiolsiloxane and 1 mole of p-fluorostyrene octa(cyclohexylsilsesquioxane) are refluxed in THF solvent at 80°C for 6 hours under the condition of 0.32 moles of HPtCl catalyst. After vacuum distillation, the target product can be obtained. Formula (VIII) shows the synthesis route. [ka] (2) The polysiloxane shown in formula (VIII) having a sulfhydryl end group and the p-fluorostyrene octa(cyclohexylsilsesquioxane) prepared in Example 1 were mixed in a 1:1 molar ratio to prepare the main material of the patterning material. Then, a dissolution and spin-coating process was carried out to form a thin film with a thickness of 15 nm on a silicon wafer substrate pretreated with HMDS. Under the protection of a mask plate, the surface of the patterning material thin film layer was selectively irradiated with low-energy, 13.5 nm soft X-rays. After exposure and development, the patterning material thin film layer can form patterned structures with a size of 0.2 nm to less than 20 nm, which meets the requirements of high sensitivity and high pattern resolution. During the exposure process, free radical polymerization can occur on the polysiloxane. Formula (IX) shows the reaction mechanism. [ka] (3) After selective irradiation with light, the patterning material thin film layer undergoes a change in solubility, and after washing with a developer consisting of a mixed solvent of isopropanol and water, the unirradiated parts are washed away and the irradiated parts are retained, forming a negative pattern, thereby completing the patterning process.

[0088] (4) The silicon wafer substrate is etched by an oxygen ion etching step to form a negative pattern on the silicon wafer substrate.

[0089] (Embodiment 3) (1) Using tetrahydrofuran as a solvent, 1 mole of trihydroxyisopropylsilsesquioxane (commercially available) and 5 moles of triethylamine are mixed in a three-necked flask. 1 mole of tin trichloride isopropyl is dissolved in tetrahydrofuran, and the tin trichloride isopropyl tetrahydrofuran solution is slowly added dropwise to the three-necked flask under stirring. The reaction is carried out at 25°C for 8 to 12 hours. The resulting solution is extracted with n-hexane and then crystallized at -30°C to obtain a colorless crystalline powder. Formula (X) shows the reaction process: [ka] (2) The product obtained in step (1) is dissolved and spin-coated to form a 15 nm thick thin film on a silicon wafer substrate pretreated with HMDS, and the thin film is selectively exposed to soft X-rays at 13.5 nm. During the exposure process, free radical polymerization can occur on the polysiloxane. Equation (IX) shows the reaction mechanism: [ka] (3) After selective irradiation with light, the patterning material thin film layer undergoes a change in solubility, and after washing with TMAH developer, the unirradiated parts are washed away and the irradiated parts are retained, forming a negative pattern, thereby completing the patterning process.

[0090] (4) The silicon wafer substrate is etched by an oxygen ion etching step to form a negative pattern on the silicon wafer substrate.

[0091] In this embodiment of the present application, different polysiloxanes have different mechanisms of free radical polymerization reaction after irradiating the thin film layer, resulting in different chemical reaction rates, i.e., the apparent effect is different photosensitivity. Specifically, the organic group can be designed to have different end groups based on the actual process condition specifications, so that the photosensitivity of the patterning material can be adjusted.

Claims

1. A patterning material comprising a polysiloxane, The polysiloxane has at least one cyclic structure formed by repeating Si-O bonds and an organic group connected to a Si atom in the cyclic structure, At least one of the organic groups has the following chemical formula: A patterning material represented by

2. The patterning material of claim 1 , wherein the molecular size of the polysiloxane is 0.2 nm to 5 nm.

3. The general formula of the polysiloxane is: You a About b M c R d and wherein M represents a metal element substituted for a portion of the Si atoms in the at least one cyclic structure, R represents the organic group, a and d are integers of 1 or greater, b is an integer of 2 or greater, c is an integer of 0 or greater, and a + c ≧ 2.

4. 4. The patterning material according to claim 1, wherein the polysiloxane has one or more cyclic structures.

5. The main molecular structure of the polysiloxane is 【Chemistry 1】 is expressed as 5. The patterning material according to claim 1, wherein in formula (I), R is the organic group, and n is an integer of 1 or more.

6. The main molecular structure of the polysiloxane is 【Chemistry 2】 is expressed as wherein, in formula (II), R is the organic group, x is an integer of 0 or more, y is an integer of 1 or more, and z is an integer of 0 or more.

7. The main molecular structure of the polysiloxane is 【Transformation 3】 is expressed as 5. The patterning material according to claim 1, wherein in formula (III), R is the organic group, and m is an integer of 1 or more.

8. 8. The patterning material according to claim 1, wherein the organic group has a carbon atom content of 1 to 20.

9. 9. The patterning material according to claim 1, wherein the organic group is a substituted or unsubstituted hydrocarbyl, a substituted or unsubstituted oxyl, an organosilicon group, or an organic group containing a metal atom.

10. the organic group has a reactive terminal group, 10. The patterning material according to claim 1, wherein the terminal group comprises a hydroxyl group, a carboxyl group, an aldehyde group, an amino group, a saturated hydrocarbyl group, an unsaturated hydrocarbyl group, an azide group, a sulfhydryl group, or an epoxy group.

11. The elemental composition of the organic group is C e H f X g O h N i P j S o Si p M' q and wherein X is a halogen atom, M' represents a second metal element, e is an integer of 1 or more, f, g, h, i, j, o, p, and q are integers of 0 or more, and (f + g + h + i + j + o + p + q) ≧ e.

12. 12. The patterning material according to claim 1, wherein in the organic group, the atom directly connected to the Si atom is a halogen atom, an O atom, a C atom, a N atom, a P atom, a S atom, or a Si atom.

13. A patterned film formed using the patterning material according to any one of claims 1 to 11.

14. The pattern resolution of the patterned film is in the range of 0.2 nm to 100 nm; 14. The patterned film of claim 13, wherein an edge roughness of the pattern on the patterned film is in the range of 2% to 30% of the resolution.

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