Light-emitting devices, projectors and displays

Abstract

To provide a light-emitting device in which good adhesion of an insulating layer can be achieved.SOLUTION: A light-emitting device includes a substrate, a laminate that is provided at the substrate and that includes a plurality of column portions, and an insulating layer covering the plurality of column portions. The plurality of column portions include a plurality of first column portions and a plurality of second column portions. The plurality of first column portions are part of the plurality of column portions and provided on an outermost side of the plurality of column portions. Each of the plurality of second column portions includes a light-emitting layer. Each of the plurality of first column portions has a height smaller than that of the nearest second column portion of the plurality of second column portions.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present invention relates to a light-emitting device, a manufacturing method thereof, a projector, and a display. [Background technology]

[0002] Semiconductor lasers are expected to be the next generation of high-brightness light sources. In particular, semiconductor lasers that incorporate nanocolumns are expected to be able to emit high-power light with a narrow beam angle due to the photonic crystal effect of the nanocolumns.

[0003] For example, Patent Document 1 describes a semiconductor light-emitting device having multiple nanocolumns formed by sequentially stacking an n-type GaN layer, a light-emitting layer, and a p-type GaN layer on a SiC substrate. In Patent Document 1, after a p-type electrode is formed at the tip of the nanocolumn, the p-type electrode and part of the nanocolumn are dug down until they reach the n-type GaN layer. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Japanese Patent Application Laid-Open No. 2010-135858 Summary of the Invention [Problem to be solved by the invention]

[0005] In the semiconductor light-emitting device described above, for example, when forming wiring connected to a p-type electrode, an insulating layer is formed to cover the nanocolumns to prevent contact between the wiring and the nanocolumns. However, because the step between the nanocolumns and the n-type GaN layer where no nanocolumns are provided is large, there is a possibility that the insulating layer will not adhere to the part where the step is formed. [Means for solving the problem]

[0006] One aspect of the light emitting device according to the present invention is A substrate; a laminate provided on the substrate and having a plurality of columnar portions; an insulating layer covering the plurality of columnar portions; and the plurality of columnar portions include a plurality of first columnar portions and a plurality of second columnar portions, the plurality of first columnar portions are some of the plurality of columnar portions provided at the outermost positions of the plurality of columnar portions, each of the plurality of second columnar sections has a light emitting layer, Each of the plurality of first columnar portions has a height smaller than the nearest second columnar portion of the plurality of second columnar portions.

[0007] One aspect of the method for manufacturing a light emitting device according to the present invention is to forming a laminate having a plurality of columnar portions on a substrate; forming an insulating layer covering the plurality of columnar portions; and In the step of forming the laminate, forming the plurality of columnar portions having a plurality of first columnar portions and a plurality of second columnar portions; the plurality of first columnar portions are some of the plurality of columnar portions formed at the outermost positions of the plurality of columnar portions, forming the plurality of second columnar sections each having a light emitting layer; Each of the plurality of first columnar portions has a height smaller than the nearest second columnar portion of the plurality of second columnar portions.

[0008] One aspect of the projector according to the present invention is The light emitting device has one aspect.

[0009] One aspect of the display according to the present invention is The light emitting device has one aspect. [Brief explanation of the drawings]

[0010] [Figure 1] FIG. 1 is a cross-sectional view schematically showing a light emitting device according to a first embodiment. [Figure 2]FIG. 1 is a plan view schematically showing a light emitting device according to a first embodiment. [Figure 3] FIG. 10 is a cross-sectional view schematically showing a light emitting device according to a reference example. [Figure 4] 3 is a flowchart illustrating a method for manufacturing the light emitting device according to the first embodiment. [Figure 5] 3A to 3C are cross-sectional views schematically showing the manufacturing process of the light emitting device according to the first embodiment. [Figure 6] 3A to 3C are cross-sectional views schematically showing the manufacturing process of the light emitting device according to the first embodiment. [Figure 7] 3A to 3C are cross-sectional views schematically showing the manufacturing process of the light emitting device according to the first embodiment. [Figure 8] 3A to 3C are cross-sectional views schematically showing the manufacturing process of the light emitting device according to the first embodiment. [Figure 9] 3A to 3C are cross-sectional views schematically showing the manufacturing process of the light emitting device according to the first embodiment. [Figure 10] 3A to 3C are cross-sectional views schematically showing the manufacturing process of the light emitting device according to the first embodiment. [Figure 11] 3A to 3C are cross-sectional views schematically showing the manufacturing process of the light emitting device according to the first embodiment. [Figure 12] 3A to 3C are cross-sectional views schematically showing the manufacturing process of the light emitting device according to the first embodiment. [Figure 13] FIG. 10 is a cross-sectional view schematically showing a light emitting device according to a second embodiment. [Figure 14] 5A to 5C are cross-sectional views schematically showing the manufacturing process of the light emitting device according to the second embodiment. [Figure 15] 5A to 5C are cross-sectional views schematically showing the manufacturing process of the light emitting device according to the second embodiment. [Figure 16] 5A to 5C are cross-sectional views schematically showing the manufacturing process of the light emitting device according to the second embodiment. [Figure 17] FIG. 10 is a cross-sectional view schematically showing a light emitting device according to a third embodiment. [Figure 18] 10A to 10C are cross-sectional views schematically showing the manufacturing process of the light emitting device according to the third embodiment. [Figure 19] FIG. 10 is a cross-sectional view schematically showing a light emitting device according to a fourth embodiment. [Figure 20] 10A to 10C are cross-sectional views schematically showing the manufacturing process of the light emitting device according to the fourth embodiment. [Figure 21] 10A to 10C are cross-sectional views schematically showing the manufacturing process of the light emitting device according to the fourth embodiment. [Figure 22] 10A to 10C are cross-sectional views schematically showing the manufacturing process of the light emitting device according to the fourth embodiment. [Figure 23] FIG. 10 is a cross-sectional view schematically showing a light emitting device according to a fifth embodiment. [Figure 24] 10A to 10C are cross-sectional views schematically showing the manufacturing process of the light emitting device according to the fifth embodiment. [Figure 25] FIG. 10 is a diagram schematically showing a projector according to a sixth embodiment. [Figure 26] FIG. 13 is a plan view schematically showing a display according to a seventh embodiment. [Figure 27] FIG. 13 is a cross-sectional view schematically showing a display according to a seventh embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0011] Preferred embodiments of the present invention will be described in detail below with reference to the drawings. Note that the embodiments described below do not unduly limit the content of the present invention as defined in the claims. Furthermore, not all of the configurations described below are necessarily essential components of the present invention.

[0012] 1. First embodiment 1.1. Light-emitting device First, a light emitting device according to a first embodiment will be described with reference to the drawings. Fig. 1 is a cross-sectional view schematically showing a light emitting device 100 according to the first embodiment. Fig. 2 is a plan view schematically showing the light emitting device 100 according to the first embodiment. Fig. 1 is a cross-sectional view taken along line II in Fig. 2. Figs. 1 and 2 show an X-axis, a Y-axis, and a Z-axis as three mutually orthogonal axes.

[0013] 1 and 2, the light emitting device 100 includes, for example, a substrate 10, a laminate 20, an insulating layer 40, a first electrode 50, a second electrode 52, a first wiring 60, a second wiring 62, and a pad 70. The light emitting device 100 is, for example, a semiconductor laser.

[0014] The substrate 10 is, for example, a Si substrate, a GaN substrate, a sapphire substrate, or a SiC substrate.

[0015] The stacked body 20 is provided on the substrate 10. In the illustrated example, the stacked body 20 is provided on the substrate 10. The stacked body 20 has, for example, a buffer layer 22, a mask layer 24, and a plurality of columnar sections 30. The columnar sections 30 have, for example, a first semiconductor layer 32, an MQW (Multi Quantum Well) layer 34, and a second semiconductor layer 36. For convenience, the insulating layer 40 is not shown in FIG. 2.

[0016] In this specification, in the stacking direction of the stacked body 20 (hereinafter also simply referred to as the "stacking direction"), when the MQW layer 34 is used as a reference, the direction from the MQW layer 34 toward the second semiconductor layer 36 is referred to as the "upper" direction, and the direction from the MQW layer 34 toward the first semiconductor layer 32 is referred to as the "lower" direction. A direction perpendicular to the stacking direction is also referred to as the "in-plane direction." The "stacking direction of the stacked body 20" refers to the stacking direction of the first semiconductor layer 32 and the MQW layer 34, which is the Z-axis direction in the illustrated example. The stacking direction is the direction of the normal N to the substrate 10.

[0017] The buffer layer 22 is provided on the substrate 10. The buffer layer 22 is, for example, an n-type GaN layer doped with Si.

[0018] The mask layer 24 is provided on the buffer layer 22. The mask layer 24 functions as a mask for growing the columnar section 30. The mask layer 24 is, for example, a silicon oxide layer, a titanium layer, a titanium oxide layer, an aluminum oxide layer, or the like.

[0019] The columnar portion 30 is provided on the buffer layer 22. The columnar portion 30 has a columnar shape that protrudes upward from the buffer layer 22. In other words, the columnar portion 30 protrudes upward from the substrate 10 via the buffer layer 22. The columnar portion 30 is also called, for example, a nanocolumn, a nanowire, a nanorod, or a nanopillar. The planar shape of the columnar portion 30 is, for example, a polygon such as a hexagon, or a circle. In the example shown in FIG. 2, the planar shape of the columnar portion 30 is a regular hexagon.

[0020] The diameter of the columnar section 30 is, for example, 50 nm or more and 500 nm or less. By setting the diameter of the columnar section 30 to 500 nm or less, it is possible to obtain an MQW layer 34 with high-quality crystals and reduce strain inherent in the MQW layer 34. As a result, light generated in the MQW layer 34 can be amplified with high efficiency.

[0021] It should be noted that the "diameter of the columnar portion 30" refers to the diameter when the planar shape of the columnar portion 30 is circular, and refers to the diameter of the smallest encompassing circle when the planar shape of the columnar portion 30 is not circular. For example, when the planar shape of the columnar portion 30 is polygonal, the diameter of the smallest circle that includes the polygon inside, and when the planar shape of the columnar portion 30 is elliptical, the diameter of the smallest circle that includes the ellipse inside.

[0022] A plurality of columnar sections 30 are provided. The interval between adjacent columnar sections 30 is, for example, 1 nm or more and 500 nm or less. The plurality of columnar sections 30 are arranged at a predetermined pitch in a predetermined direction when viewed from the stacking direction. The plurality of columnar sections 30 are arranged, for example, in a triangular lattice pattern or a square lattice pattern. In the illustrated example, the plurality of columnar sections 30 are arranged in a regular triangular lattice pattern. The plurality of columnar sections 30 can exhibit the effect of a photonic crystal.

[0023] The "pitch of the columnar portions 30" refers to the distance between the centers of adjacent columnar portions 30 along a predetermined direction. When the planar shape of the columnar portions 30 is a circle, the "center of the columnar portion 30" refers to the center of the circle. When the planar shape of the columnar portions 30 is not a circle, the "center of the columnar portion 30" refers to the center of the smallest encompassing circle. For example, when the planar shape of the columnar portions 30 is a polygon, the center of the smallest circle that contains the polygon within itself. When the planar shape of the columnar portions 30 is an ellipse, the center of the smallest circle that contains the ellipse within itself.

[0024] The multiple columnar portions 30 include multiple first columnar portions 30a and multiple second columnar portions 30b. The first columnar portion 30a of the multiple columnar portions 30 is provided at the outermost position of the multiple columnar portions 30. The multiple first columnar portions 30a are some of the columnar portions 30 provided at the outermost positions of the multiple columnar portions 30. The multiple first columnar portions 30a may be all of the columnar portions 30 provided at the outermost positions of the multiple columnar portions 30. The "outermost positions of the multiple columnar portions 30" refers to the positions where, when a line segment connecting the centers of adjacent columnar portions 30 passes through a line segment that constitutes the outer edge of a figure, the figure passes through. The "columnar portion 30 provided at the outermost position of the multiple columnar portions 30" refers to the columnar portion 30 provided at the positions where, when a line segment connecting the centers of adjacent columnar portions 30 passes through a line segment that constitutes the outer edge of the figure, the figure passes through. In the example shown in FIG. 2, a plurality of columnar portions 30 are lined up in the X-axis direction to form a row 8, and a plurality of these rows 8 are lined up in the Y-axis direction. In the example shown, all of the columnar portions 30 constituting row 8a that is furthest in the +Y-axis direction among the plurality of rows 8, all of the columnar portions 30 constituting row 8b that is furthest in the -Y-axis direction among the plurality of rows 8, and the columnar portions 30 at the ends in the +X-axis direction and the -X-axis direction of each of the plurality of rows 8 other than rows 8a and 8b among the plurality of rows 8 are first columnar portions 30a provided outermost in the plurality of columnar portions 30. In the example shown in FIG. 1, the columnar portion 30 furthest in the -X-axis direction among the plurality of columnar portions 30 and the columnar portion 30 furthest in the +X-axis direction among the plurality of columnar portions 30 are first columnar portions 30a.

[0025] Each of the multiple first columnar portions 30a has a height smaller than that of the closest second columnar portion 30b among the multiple second columnar portions 30b. In the example shown in FIG. 1, the first columnar portion 30a1 has a height smaller than that of the second columnar portion 30b1. The first columnar portion 30a1 is the first columnar portion 30a that is provided at the end of the multiple first columnar portions 30a in the -X-axis direction. The second columnar portion 30b1 is the second columnar portion 30b that is closest to the first columnar portion 30a1 among the multiple second columnar portions 30b. In the example shown in FIG. 1, the first columnar portion 30a2 has a height smaller than that of the second columnar portion 30b2. The first columnar portion 30a2 is the first columnar portion 30a that is provided at the end of the multiple first columnar portions 30a in the +X-axis direction. The second columnar section 30b2 is the second columnar section 30b that is closest to the first columnar section 30a2 among the multiple second columnar sections 30b.

[0026] The heights of the multiple first columnar sections 30a are, for example, the same as each other. The height H1 of the first columnar section 30a is, for example, the smallest among the multiple columnar sections 30. The "height of the columnar section 30" refers to the maximum size of the columnar section 30 in the stacking direction. The height H1 of the first columnar section 30a is smaller than the height H2 of the second columnar section 30b. The second columnar section 30b has an MQW layer 34 as a light-emitting layer. The second columnar section 30b is a columnar section 30 that emits light when a current is injected thereinto. The multiple second columnar sections 30b may have the same height, or some of the multiple second columnar sections 30b may have different heights. In this case, the height of at least one of the multiple first columnar sections 30a may be smaller than the height of the smallest second columnar section 30b among the multiple second columnar sections 30b.

[0027] The low columnar portions 132 of the plurality of columnar portions 30 are columnar portions that are shorter in height than the high columnar portions 130 of the plurality of columnar portions 30. A plurality of high columnar portions 130 are provided. A plurality of low columnar portions 132 are provided. When viewed from the stacking direction, the plurality of low columnar portions 132 surround the plurality of high columnar portions 130. In the example shown, the heights of the plurality of high columnar portions 130 are the same as each other. The heights of the plurality of low columnar portions 132 are the same as each other. The diameter of the low columnar portion 132 is, for example, the same as the diameter of the high columnar portion 130. The first columnar portion 30a is the low columnar portion 132. The second columnar portion 30b is the high columnar portion 130.

[0028] The high columnar section 130 is provided in the first region 2. In the example shown in FIG. 2, the shape of the first region 2 is rectangular. The low columnar section 132 is provided in the second region 4. When viewed from the stacking direction, the second region 4 surrounds the first region 2. No columnar section 30 is provided in the third region 6, which surrounds the first region 2 and the second region 4 when viewed from the stacking direction. The second region 4 is provided between the first region 2 and the third region 6. In the example shown, the first region 2, the second region 4, and the third region 6 are the upper surface of the buffer layer 22. The distance between the third region 6 and the substrate 10 is smaller than the distance between the first region 2 and the substrate 10 and the distance between the second region 4 and the substrate 10.

[0029] As shown in FIG. 1, the tall columnar section 130 includes, for example, a first semiconductor layer 32, an MQW layer 34, and a second semiconductor layer 36.

[0030] The first semiconductor layer 32 is provided on the buffer layer 22. The first semiconductor layer 32 is provided between the substrate 10 and the MQW layer 34. The first semiconductor layer 32 is a semiconductor layer of a first conductivity type. The first semiconductor layer 32 is, for example, an n-type GaN layer doped with Si.

[0031] The MQW layer 34 is provided on the first semiconductor layer 32. The MQW layer 34 is provided between the first semiconductor layer 32 and the second semiconductor layer 36. The MQW layer 34 is an i-type semiconductor layer that is not intentionally doped with impurities. The MQW layer 34 has, for example, a well layer and a barrier layer. The well layer is, for example, an InGaN layer. The barrier layer is, for example, a GaN layer. The MQW layer 34 has an MQW structure composed of the well layer and the barrier layer. The MQW layer 34 of the second columnar section 30b is a light-emitting layer that generates light when a current is injected therein.

[0032] There is no particular limitation on the number of well layers and barrier layers that make up the MQW layer 34. For example, only one well layer may be provided, in which case the high columnar section 130 has an SQW (Single Quantum Well) layer instead of the MQW layer 34.

[0033] The second semiconductor layer 36 is provided on the MQW layer 34. The second semiconductor layer 36 is provided between the MQW 34 and the second electrode 52. The second semiconductor layer 36 is a semiconductor layer of a second conductivity type different from the first conductivity type. The second semiconductor layer 36 is, for example, a p-type GaN layer doped with Mg. The first semiconductor layer 32 and the second semiconductor layer 36 of the second columnar section 30b are cladding layers that have the function of confining light in the MQW layer 34.

[0034] Although not shown, an OCL (Optical Confinement Layer) made of an i-type InGaN layer and a GaN layer may be provided at least one between the first semiconductor layer 32 and the MQW layer 34 and between the MQW layer 34 and the second semiconductor layer 36. The second semiconductor layer 36 may also have an EBL (Electron Blocking Layer) made of a p-type AlGaN layer.

[0035] In the light-emitting device 100, a p-i-n diode is formed by the p-type second semiconductor layer 36 of the second columnar section 30b, the i-type MQW 34 of the second columnar section 30b, and the n-type first semiconductor layer 32 of the second columnar section 30b. In the light-emitting device 100, when a forward bias voltage of the p-i-n diode is applied between the first electrode 50 and the second electrode 52, current is injected into the MQW layer 34 of the second columnar section 30b, causing recombination of electrons and holes in the MQW layer 34 of the second columnar section 30b. This recombination generates light. Light generated in the MQW layer 34 of the second columnar section 30b propagates in the in-plane direction and forms a standing wave due to the photonic crystal effect of the multiple columnar sections 30. The light then receives gain in the MQW layer 34 of the second columnar section 30b, resulting in laser oscillation. The light emitting device 100 then emits the +1st order diffracted light and the −1st order diffracted light as laser light in the stacking direction.

[0036] Although not shown, a reflective layer may be provided between the substrate 10 and the buffer layer 22 or below the substrate 10. The reflective layer is, for example, a DBR (Distributed Bragg Reflector) layer. The reflective layer can reflect light generated in the MQW layer 34 of the second columnar section 30b, and the light emitting device 100 can emit light only from the second electrode 52 side.

[0037] The low columnar section 132 is composed of, for example, a first semiconductor layer 32, an MQW layer 34, and a second semiconductor layer 36. The size of the second semiconductor layer 36 of the low columnar section 132 in the stacking direction is smaller than the size of the second semiconductor layer 36 of the high columnar section 130 in the stacking direction. The second semiconductor layer 36 of the low columnar section 132 is not electrically connected to the second electrode 52. Therefore, recombination of electrons and holes does not occur in the MQW layer 34 of the low columnar section 132. The low columnar section 132 does not emit light. No current is injected into the low columnar section 132. Although not shown, the low columnar section 132 may be composed of only the first semiconductor layer 32 and the MQW layer 34, or may be composed of only the first semiconductor layer 32.

[0038] The insulating layer 40 covers the stacked body 20. The insulating layer 40 covers the multiple columnar sections 30. Specifically, the insulating layer 40 covers the multiple low columnar sections 132 and the buffer layer 22. The first columnar section 30a is covered by the insulating layer 40. The second columnar section 30b is not covered by the insulating layer 40. The insulating layer 40 is, for example, a silicon oxide layer. A contact hole 42 is provided in the insulating layer 40. The contact hole 42 overlaps with the high columnar section 130 when viewed from the stacking direction. In the example shown, the contact hole 42 overlaps with the second columnar section 30b.

[0039] The first electrode 50 is provided on the buffer layer 22. In the example shown in FIG. 2, the first electrode 50 is provided in the third region 6. The buffer layer 22 may be in ohmic contact with the first electrode 50. The first electrode 50 is electrically connected to the first semiconductor layer 32 of the second columnar section 30b. In the example shown, the first electrode 50 is electrically connected to the first semiconductor layer 32 of the second columnar section 30b via the buffer layer 22. The first electrode 50 is one of the electrodes for injecting current into the MQW layer 34 of the second columnar section 30b. The first electrode 50 is, for example, a layer formed by laminating a Cr layer, a Ni layer, and an Au layer in this order from the buffer layer 22 side.

[0040] The second electrode 52 is provided on the second semiconductor layer 36. The second electrode 52 is provided in the contact hole 42. The second electrode 52 is connected to the second columnar section 30b. The second electrode 52 is not connected to the low columnar section 132. The second semiconductor layer 36 of the second columnar section 30b may be in ohmic contact with the second electrode 52. The second electrode 52 is the other electrode for injecting current into the MQW layer 34 of the second columnar section 30b. For example, ITO (Indium Tin Oxide), ZnO or the like is used as the second electrode 52.

[0041] The first wiring 60 and the second wiring 62 are provided on the insulating layer 40. The wirings 60 and 62 are connected to the second electrode 52. The wirings 60 and 62 are wirings for injecting current into the MWQ layer serving as a light-emitting layer. The first wiring 60 connects the second electrode 52 to the pad 70. The second wiring 62 connects, for example, the second electrode 52 to a light-emitting element (not shown). The first wiring 60 overlaps the first columnar section 30a when viewed from the stacking direction. In the example shown, the first wiring 60 overlaps the high columnar section 130 and the low columnar section 132 when viewed from the stacking direction. The second wiring 62 overlaps the high columnar section 130 and the low columnar section 132 when viewed from the stacking direction. The wirings 60 and 62 are made of a material such as Al, Cu, Au, or Ti.

[0042] The pad 70 is provided on the insulating layer 40. When viewed from the stacking direction, the pad 70 overlaps with the third region 6. The size of the pad 70 in the Y-axis direction is larger than the size of the first wiring 60 in the Y-axis direction. For example, a wire bonding (not shown) is connected to the pad 70. The material of the pad 70 is, for example, the same as that of the first wiring 60.

[0043] Although the above description has been given of an InGaN-based MQW layer 34, various material systems that can emit light when a current is injected depending on the wavelength of the emitted light can be used for the MQW layer 34. For example, semiconductor materials such as AlGaN-based, AlGaAs-based, InGaAs-based, InGaAsP-based, InP-based, GaP-based, and AlGaP-based materials can be used.

[0044] Furthermore, the light emitting device 100 is not limited to a laser, but may also be an LED (Light Emitting Diode).

[0045] The light emitting device 100 has the following advantages, for example.

[0046] The light emitting device 100 includes a substrate 10, a stacked body 20 provided on the substrate 10 and having a plurality of columnar sections 30, and an insulating layer 40 covering the plurality of columnar sections 30. The plurality of columnar sections 30 include a plurality of first columnar sections 30a and a plurality of second columnar sections 30b. The plurality of first columnar sections 30a are some of the columnar sections 30 provided at the outermost positions of the plurality of columnar sections 30, and each of the plurality of second columnar sections 30b has an MQW layer 34 as a light emitting layer, and each of the plurality of first columnar sections 30a has a height smaller than that of the nearest second columnar section 30b among the plurality of second columnar sections 30b.

[0047] Therefore, in the light emitting device 100, the step U formed by the multiple columnar sections 30 can be made smaller than when, for example, the height of the first columnar section is the same as the height of the closest second columnar section among the multiple second columnar sections. Specifically, the step U between the portion of the laminate 20 where the columnar section 30 is provided and the portion of the laminate 20 where the columnar section 30 is not provided can be made smaller. This allows for better adhesion of the insulating layer 40.

[0048] 3, for example, when the height of the first columnar section 1030a is the same as the height of the second columnar section 1030b, a step U formed by the multiple columnar sections 1030 is large, and adhesion of the insulating layer 1040 is poor in the area where the step U is formed. As a result, cracks may occur in the insulating layer 1040 in the area where the step U is formed, and the wiring 1060 may penetrate into the crack, causing contact between the wiring 1060 and the laminate 1020. This may result in leakage current. Furthermore, adhesion of the wiring 1060 is poor in the area where the step U is formed, and the wiring 1060 may break.

[0049] As described above, in the light emitting device 100, the first columnar section 30a has a height smaller than that of the closest second columnar section 30b among the plurality of second columnar sections 30b, thereby making it possible to avoid the above-mentioned problems. Note that Fig. 3 is a cross-sectional view schematically showing a light emitting device 1000 according to a reference example.

[0050] The light emitting device 100 has a first wiring 60 provided in the insulating layer 40 for injecting current into the MQW layer 34 serving as a light emitting layer, and the first wiring 60 overlaps with a plurality of first columnar sections 30a when viewed from the stacking direction. As described above, in the light emitting device 100, the step U caused by the plurality of columnar sections 30 can be made small, thereby reducing the possibility of the first wiring 60 being broken.

[0051] 1.2. Light-emitting device manufacturing method Next, a method for manufacturing the light emitting device 100 according to the first embodiment will be described with reference to the drawings. Fig. 4 is a flowchart for explaining the method for manufacturing the light emitting device 100 according to the first embodiment.

[0052] 4, the manufacturing method of the light emitting device 100 according to the first embodiment includes a step (step S1) of forming a stacked body 20 having a plurality of columnar sections 30 on a substrate 10, and a step (step S2) of forming an insulating layer 40 covering the plurality of columnar sections 30. In the step (step S1) of forming the stacked body 20, a plurality of columnar sections 30 are formed, each having a plurality of first columnar sections 30a and a plurality of second columnar sections 30b, and each of the plurality of first columnar sections 30a is formed at the outermost position of the plurality of columnar sections 30, thereby forming the plurality of second columnar sections 30b having an MQW layer 34 as a light emitting layer. Each of the plurality of first columnar sections 30a has a height smaller than that of the nearest second columnar section 30b among the plurality of second columnar sections 30b.

[0053] The method for manufacturing the light emitting device 100 according to the first embodiment will be described in more detail below. Figures 5 to 12 are cross-sectional views that schematically show the manufacturing process for the light emitting device 100 according to the first embodiment.

[0054] 5, a buffer layer 22 is epitaxially grown on a substrate 10. Examples of methods for epitaxial growth include MOCVD (Metal Organic Chemical Vapor Deposition) and MBE (Molecular Beam Epitaxy).

[0055] Next, a mask layer 24 is formed on the buffer layer 22. The mask layer 24 is formed by, for example, deposition using an electron beam evaporation method or a sputtering method, and patterning. An opening 26 for growing the columnar section 30 is formed in the mask layer 24. The patterning is performed by, for example, electron beam lithography and dry etching.

[0056] 6, the first semiconductor layer 32, the MQW layer 34, and the second semiconductor layer 36 are epitaxially grown in this order on the buffer layer 22 using the mask layer 24 as a mask. Examples of the epitaxial growth method include MOCVD and MBE. This process allows the formation of multiple columnar sections 30.

[0057] 7, a hard mask layer 140 is formed on the plurality of columnar sections 30. The hard mask layer 140 is, for example, a silicon oxide layer. Next, a resist layer 150 is formed on the hard mask layer 140.

[0058] Next, the hard mask layer 140 is etched using the resist layer 150 as a mask, as shown in Fig. 8. This allows the hard mask layer 140 to be patterned into a predetermined shape. The shape of the patterned hard mask layer 140 is the same as the combined shape of the first region 2 and the second region 4 when viewed from the stacking direction. Thereafter, the resist layer 150 is removed.

[0059] 9, the hard mask layer 140 is used as a mask to dry-etch the multiple columnar sections 30. In this step, part of the buffer layer 22 is also etched. By this step, the third region 6 of the buffer layer 22 is exposed.

[0060] 10, the hard mask layer 140 is patterned. The patterning is performed by photolithography and etching as described above. The shape of the patterned hard mask layer 140 is the same as the shape of the first region 2 when viewed from the stacking direction.

[0061] 11, a plurality of columnar sections 30 are dry-etched using the hard mask layer 140 as a mask. The columnar sections 30 etched in this process are low columnar sections 132. The columnar sections 30 not etched in this process are high columnar sections 130. Thereafter, the hard mask layer 140 is removed.

[0062] 2, the first electrode 50 is formed on the buffer layer 22. The first electrode 50 is formed by, for example, vacuum deposition or sputtering.

[0063] 12, an insulating layer 40 is formed to cover the plurality of columnar sections 30. The insulating layer 40 is formed by, for example, a CVD (Chemical Vapor Deposition) method or a spin coating method.

[0064] 1, the insulating layer 40 is patterned to form contact holes 42. The patterning is performed by, for example, photolithography and etching.

[0065] Next, the second electrode 52 is formed on the plurality of high columnar sections 130. The second electrode 52 is formed by, for example, vacuum deposition or sputtering.

[0066] Next, the first wiring 60, the second wiring 62, and the pad 70 are formed on the insulating layer 40. The first wiring 60, the second wiring 62, and the pad 70 are formed by, for example, a sputtering method.

[0067] Through the above steps, the light emitting device 100 can be manufactured.

[0068] 2. Second embodiment 2.1. Light-emitting device Next, a light emitting device according to a second embodiment will be described with reference to the drawings. Fig. 13 is a cross-sectional view schematically showing a light emitting device 200 according to the second embodiment. Hereinafter, in the light emitting device 200 according to the second embodiment, components having the same functions as those of the light emitting device 100 according to the first embodiment described above will be denoted by the same reference numerals, and detailed description thereof will be omitted.

[0069] In the light emitting device 100 described above, as shown in FIG. 1, the heights of the plurality of low columnar sections 132 are the same.

[0070] In contrast, in the light emitting device 200, as shown in FIG. 13, the height of the plurality of low columnar sections 132 decreases from the second columnar section 30b toward the outermost portion of the plurality of columnar sections 30.

[0071] The multiple columnar portions 30 include a third columnar portion 30c and a fourth columnar portion 30d. The third columnar portion 30c of the multiple columnar portions 30 is adjacent to a first columnar portion 30a1, which is one of the multiple first columnar portions 30a. The fourth columnar portion 30d of the multiple columnar portions 30 is adjacent to the third columnar portion 30c. The first columnar portion 30a1, the third columnar portion 30c, and the fourth columnar portion 30d are lined up in the direction away from the outermost portion of the multiple columnar portions 30 in the order of first columnar portion 30a1, third columnar portion 30c, and fourth columnar portion 30d. In the illustrated example, the first columnar section 30a1, the third columnar section 30c, and the fourth columnar section 30d are aligned in the order of first columnar section 30a1, third columnar section 30c, and fourth columnar section 30d in a direction from the outermost section of the multiple columnar sections 30 toward the second columnar section 30b. The first columnar section 30a1, the third columnar section 30c, and the fourth columnar section 30d are aligned in the X-axis direction.

[0072] The height H4 of the fourth columnar section 30d is smaller than the height H2 of the second columnar section 30b. The height H3 of the third columnar section 30c is smaller than the height H4 of the fourth columnar section 30d. The height H1 of the first columnar section 30a1 is smaller than the height H3 of the third columnar section 30c. The third columnar section 30c and the fourth columnar section 30d are low columnar sections 132. In the example shown, the top surface of the low columnar section 132 is inclined with respect to the top surface of the substrate 10. The top surfaces of the low columnar sections 132 are inclined so that the outermost portions of the multiple columnar sections 30 are lower. The insulating layer 40 covers the first columnar section 30a1, the third columnar section 30c, and the fourth columnar section 30d. When viewed from the stacking direction, the first wiring 60 overlaps with the first columnar section 30a1, the third columnar section 30c, and the fourth columnar section 30d.

[0073] In the light emitting device 200, the multiple columnar portions 30 have a third columnar portion 30c and a fourth columnar portion 30d, and the third columnar portion 30c is adjacent to a first columnar portion 30a1, which is one of the multiple first columnar portions 30a, and the fourth columnar portion 30d is adjacent to the third columnar portion 30c. The first columnar portion 30a1, the third columnar portion 30c, and the fourth columnar portion 30d are lined up in the direction away from the outermost portion of the multiple columnar portions 30 in the order of first columnar portion 30a1, third columnar portion 30c, and fourth columnar portion 30d. The height H4 of the fourth columnar section 30d is smaller than the height H2 of each of the multiple second columnar sections 30b, the height H3 of the third columnar section 30c is smaller than the height H4 of the fourth columnar section 30d, and the height H1 of the first columnar section 30a1 is smaller than the height H3 of the third columnar section 30c.

[0074] Therefore, in the light emitting device 200, for example, compared to when the heights of the first columnar section, the second columnar section, and the fourth columnar section are the same, the height of the stack 20 can be made smaller in stages toward the outermost of the multiple columnar sections 30. This can improve the adhesion of the insulating layer 40.

[0075] 2.2. Light-emitting device manufacturing method Next, a method for manufacturing the light emitting device 200 according to the second embodiment will be described with reference to the drawings. Figures 14 to 16 are cross-sectional views that schematically show the manufacturing process for the light emitting device 200 according to the second embodiment.

[0076] Similar to the method for manufacturing the light emitting device 100 described above, the buffer layer 22, the mask layer 24, and the plurality of columnar sections 30 are formed.

[0077] 14, a hard mask layer 140 is formed on the plurality of columnar sections 30, and a resist layer 150 is formed on the hard mask layer 140. Next, the resist layer 150 is heated at, for example, 200°C to recede the upper surface of the resist layer 150. As a result, the resist layer 150 has a tapered shape in which the width of the upper surface is smaller than the width of the lower surface.

[0078] Next, the hard mask layer 140 is dry-etched using the tapered resist layer 150 as a mask. As shown in Fig. 15, the shape of the resist layer 150 is transferred to the hard mask layer 140, and the etched hard mask layer 140 has a tapered shape. Thereafter, the resist layer 150 is removed.

[0079] Next, the multiple columnar sections 30 are dry-etched using the tapered hard mask layer 140 as a mask. As shown in FIG. 16 , the shape of the hard mask layer 140 is transferred to the multiple columnar sections 30, and the heights of the multiple low columnar sections 132 decrease from the second columnar section 30b toward the outermost portion of the multiple columnar sections 30. Therefore, the height H4 of the fourth columnar section 30d can be made smaller than the height H2 of the second columnar section 30b, the height H3 of the third columnar section 30c can be made smaller than the height H4 of the fourth columnar section 30d, and the height H1 of the first columnar section 30a1 can be made smaller than the height H3 of the third columnar section 30c. Then, the hard mask layer 140 is removed.

[0080] Next, in the same manner as in the method for manufacturing the light emitting device 100 described above, the first electrode 50, the insulating layer 40, the second electrode 52, the wirings 60 and 62, and the pad 70 are formed.

[0081] Through the above steps, the light emitting device 200 can be manufactured.

[0082] 3. Third embodiment 3.1. Light-emitting device Next, a light emitting device according to a third embodiment will be described with reference to the drawings. Fig. 17 is a cross-sectional view schematically showing a light emitting device 300 according to the third embodiment. Hereinafter, in the light emitting device 300 according to the third embodiment, components having the same functions as those of the light emitting device 100 according to the first embodiment described above will be denoted by the same reference numerals, and detailed description thereof will be omitted.

[0083] In the light emitting device 100 described above, the distance between adjacent low columnar sections 132 is the same as the distance between adjacent high columnar sections 130, as shown in FIG.

[0084] In contrast, in the light emitting device 300, as shown in FIG. 17, the distance between adjacent low columnar sections 132 is greater than the distance between adjacent high columnar sections 130.

[0085] 3.2. Light-emitting device manufacturing method Next, a method for manufacturing the light emitting device 300 according to the third embodiment will be described with reference to the drawings. Figure 18 is a cross-sectional view schematically showing the manufacturing process of the light emitting device 200 according to the second embodiment.

[0086] As in the light-emitting device 100 described above, after growing the buffer layer 22, a mask layer 24 is formed so that the distance between the openings 26 for growing adjacent low columnar sections 132 is greater than the distance between the openings 26 for growing adjacent high columnar sections 130, as shown in FIG. 18.

[0087] Next, similarly to the light emitting device 100 described above, a plurality of columnar sections 30, a first electrode 50, an insulating layer 40, a second electrode 52, wirings 60 and 62, and a pad 70 are formed.

[0088] Through the above steps, the light emitting device 300 can be manufactured.

[0089] 4. Fourth embodiment 4.1. Light-emitting device Next, a light emitting device according to a fourth embodiment will be described with reference to the drawings. Fig. 19 is a cross-sectional view schematically showing a light emitting device 400 according to the fourth embodiment. Hereinafter, in the light emitting device 400 according to the fourth embodiment, components having the same functions as those of the light emitting device 200 according to the second embodiment described above will be denoted by the same reference numerals, and detailed description thereof will be omitted.

[0090] In the light emitting device 200 described above, as shown in FIG. 13, the distances between adjacent low columnar portions 132 are the same.

[0091] 19, in the light emitting device 400, the distance L1 between the first columnar section 30a1 and the third columnar section 30c is greater than the distance L2 between the third columnar section 30c and the fourth columnar section 30d. The distance between adjacent low columnar sections 132 increases, for example, from the second columnar section 30b toward the outermost of the multiple columnar sections 30. In the illustrated example, the top surfaces of the low columnar sections 132 are parallel to the top surface of the substrate 10.

[0092] 4.2. Light-emitting device manufacturing method Next, a method for manufacturing the light emitting device 400 according to the fourth embodiment will be described with reference to the drawings. Figures 20 to 22 are cross-sectional views that schematically show the manufacturing process for the light emitting device 400 according to the fourth embodiment.

[0093] As in the light emitting device 100 described above, after growing the buffer layer 22, a mask layer 24 is formed so that the distance between the openings 26 for growing adjacent low columnar sections 132 increases from the second columnar section 30b toward the outermost of the multiple columnar sections 30, as shown in Fig. 20. Next, as in the light emitting device 100 described above, multiple columnar sections 30 are grown.

[0094] Next, as shown in FIG. 21, a hard mask layer 140 having a predetermined shape is formed on the plurality of columnar sections 30.

[0095] Next, as shown in FIG. 22, the multiple columnar sections 30 are dry-etched using the hard mask layer 140 as a mask. Here, the etching rate of the multiple columnar sections 30 increases as the distance between adjacent columnar sections 30 increases. Therefore, the height H4 of the fourth columnar section 30d can be made smaller than the height H2 of the second columnar section 30b. Furthermore, the height H3 of the third columnar section 30c can be made smaller than the height H4 of the fourth columnar section 30d. Furthermore, the height H1 of the first columnar section 30a1 can be made smaller than the height H3 of the third columnar section 30c.

[0096] Next, in the same manner as in the method for manufacturing the light emitting device 100 described above, the first electrode 50, the insulating layer 40, the second electrode 52, the wirings 60 and 62, and the pad 70 are formed.

[0097] Through the above steps, the light emitting device 400 can be manufactured.

[0098] In the light emitting device 400, the distance L1 between the first columnar section 30a1, which is one of the multiple first columnar sections 30a, and the third columnar section 30c is greater than the distance L2 between the third columnar section 30c and the fourth columnar section 30d. As described above, the greater the distance between adjacent columnar sections 30, the faster the etching rate of dry etching. Therefore, in the light emitting device 400, by utilizing the difference in etching rate, the height H3 of the third columnar section 30c can be made smaller than the height H4 of the fourth columnar section 30d, and the height H1 of the first columnar section 30a1 can be made smaller than the height H3 of the third columnar section 30c.

[0099] 5. Fifth embodiment 5.1. Light-emitting device Next, a light emitting device according to a fifth embodiment will be described with reference to the drawings. Fig. 23 is a cross-sectional view schematically showing a light emitting device 500 according to the fifth embodiment. Hereinafter, in the light emitting device 500 according to the fifth embodiment, components having the same functions as those of the light emitting device 400 according to the fourth embodiment described above will be denoted by the same reference numerals, and detailed description thereof will be omitted.

[0100] In the light emitting device 400 described above, as shown in FIG. 19, the diameters of the plurality of columnar sections 30 are the same.

[0101] In contrast, in the light emitting device 500, as shown in FIG. 23, the diameter D1 of the first columnar section 30a is smaller than the diameter D2 of the second columnar section 30b. The diameters of the multiple low columnar sections 132 decrease from the second columnar section 30b toward the outermost of the multiple columnar sections 30. The diameters of the multiple high columnar sections 130 are, for example, the same as each other. The diameter D4 of the fourth columnar section 30d is smaller than the diameter D2 of the second columnar section 30b. The diameter D3 of the third columnar section 30c is smaller than the diameter D4 of the fourth columnar section 30d. The diameter D1 of the first columnar section 30a is smaller than the diameter D3 of the third columnar section 30c.

[0102] 5.2. Light-emitting device manufacturing method Next, a light emitting device 500 according to a fifth embodiment will be described with reference to the drawings. Figure 24 is a cross-sectional view schematically showing a manufacturing process for the light emitting device 500 according to the fifth embodiment.

[0103] As in the manufacturing method of the light emitting device 100 described above, after growing the buffer layer 22, a mask layer 24 is formed so that the diameter of the openings 26 for growing the multiple low columnar sections 132 becomes smaller from the second columnar section 30b toward the second columnar section 30b from the outermost of the multiple columnar sections 30, as shown in Fig. 24. Next, as in the manufacturing method of the light emitting device 100 described above, the columnar sections 30 are grown.

[0104] Here, the smaller the diameter of the columnar section 30, the slower the growth rate and the smaller the height. Therefore, the height H4 of the fourth columnar section 30d can be made smaller than the height H2 of the second columnar section 30b. Furthermore, the height H3 of the third columnar section 30c can be made smaller than the height H4 of the fourth columnar section 30d. Furthermore, the height H1 of the first columnar section 30a can be made smaller than the height H3 of the third columnar section 30c.

[0105] Next, in the same manner as in the method for manufacturing the light emitting device 100 described above, the first electrode 50, the insulating layer 40, the second electrode 52, the wirings 60 and 62, and the pad 70 are formed.

[0106] Through the above steps, the light emitting device 500 can be manufactured.

[0107] In the light emitting device 500, the diameter D1 of each of the multiple first columnar sections 30a is smaller than the diameter D2 of each of the multiple second columnar sections 30b. As described above, the smaller the diameter of a columnar section 30, the slower the growth rate and the smaller the height. Therefore, in the light emitting device 500, by utilizing the difference in growth rate, the height H1 of the first columnar section 30a can be made smaller than the height H2 of the second columnar section 30b.

[0108] 6. Sixth embodiment Next, a projector according to a sixth embodiment will be described with reference to the drawings. Fig. 25 is a diagram schematically showing a projector 800 according to the sixth embodiment.

[0109] The projector 800 includes, for example, a light emitting device 100 as a light source.

[0110] Projector 800 has a housing (not shown) and red light source 100R, green light source 100G, and blue light source 100B that are provided in the housing and emit red light, green light, and blue light, respectively. For convenience, red light source 100R, green light source 100G, and blue light source 100B are simplified in FIG.

[0111] The projector 800 further includes, within the housing, a first optical element 802R, a second optical element 802G, a third optical element 802B, a first light modulation device 804R, a second light modulation device 804G, a third light modulation device 804B, and a projection device 808. The first light modulation device 804R, the second light modulation device 804G, and the third light modulation device 804B are, for example, transmissive liquid crystal light valves. The projection device 808 is, for example, a projection lens.

[0112] Light emitted from red light source 100R is incident on first optical element 802R. The light emitted from red light source 100R is collected by first optical element 802R. Note that first optical element 802R may have a function other than collecting light. The same applies to second optical element 802G and third optical element 802B, which will be described later.

[0113] The light collected by the first optical element 802R is incident on the first light modulation device 804R. The first light modulation device 804R modulates the incident light in accordance with image information. The projection device 808 then enlarges the image formed by the first light modulation device 804R and projects it onto a screen 810.

[0114] The light emitted from green light source 100G is incident on second optical element 802G. The light emitted from green light source 100G is collected by second optical element 802G.

[0115] The light collected by the second optical element 802G is incident on the second light modulation device 804G. The second light modulation device 804G modulates the incident light in accordance with image information. The projection device 808 then enlarges the image formed by the second light modulation device 804G and projects it onto the screen 810.

[0116] The light emitted from blue light source 100B is incident on third optical element 802B. The light emitted from blue light source 100B is collected by third optical element 802B.

[0117] The light collected by the third optical element 802B enters the third light modulation device 804B. The third light modulation device 804B modulates the incident light in accordance with image information. The projection device 808 then enlarges the image formed by the third light modulation device 804B and projects it onto the screen 810.

[0118] The projector 800 may also have a cross dichroic prism 806 that combines the light emitted from the first light modulation device 804R, the second light modulation device 804G, and the third light modulation device 804B and guides the combined light to the projection device 808.

[0119] The three colored lights modulated by the first light modulation device 804R, the second light modulation device 804G, and the third light modulation device 804B enter the cross dichroic prism 806. The cross dichroic prism 806 is formed by bonding four right-angle prisms together, and a dielectric multilayer film that reflects red light and a dielectric multilayer film that reflects blue light are disposed on its inner surface. These dielectric multilayer films combine the three colored lights to form light that represents a color image. The combined light is then projected onto a screen 810 by a projection device 808, and an enlarged image is displayed.

[0120] Note that red light source 100R, green light source 100G, and blue light source 100B may directly form an image without using first light modulation device 804R, second light modulation device 804G, and third light modulation device 804B, by controlling light emitting device 100 as pixels of the image in accordance with image information. Then, projection device 808 may enlarge and project the image formed by red light source 100R, green light source 100G, and blue light source 100B onto screen 810.

[0121] In the above example, a transmissive liquid crystal light valve is used as the light modulation device, but a light valve other than a liquid crystal light valve or a reflective light valve may also be used. Examples of such light valves include a reflective liquid crystal light valve and a digital micromirror device. The configuration of the projection device can be changed as appropriate depending on the type of light valve used.

[0122] The light source can also be applied to a light source device of a scanning type image display device having a scanning means which is an image forming device that displays an image of a desired size on a display surface by scanning light from the light source on a screen.

[0123] 7. Seventh embodiment Next, a display according to a seventh embodiment will be described with reference to the drawings. Fig. 26 is a plan view schematically showing a display 900 according to the seventh embodiment. Fig. 27 is a cross-sectional view schematically showing the display 900 according to the seventh embodiment. For convenience, Fig. 26 illustrates an X-axis and a Y-axis as two axes that are orthogonal to each other.

[0124] The display 900 includes, for example, a light emitting device 100 as a light source.

[0125] The display 900 is a display device that displays images. Images include images that display only text information. The display 900 is a self-luminous display. As shown in FIGS. 26 and 27 , the display 900 has a circuit board 910, a lens array 920, and a heat sink 930.

[0126] A drive circuit for driving the light emitting device 100 is mounted on the circuit board 910. The drive circuit is, for example, a circuit including a CMOS (Complementary Metal Oxide Semiconductor). The drive circuit drives the light emitting device 100 based on, for example, input image information. Although not shown, a light-transmitting substrate for protecting the circuit board 910 is disposed on the circuit board 910.

[0127] The circuit board 910 has a display area 912 , a data line driving circuit 914 , a scanning line driving circuit 916 , and a control circuit 918 .

[0128] The display area 912 is made up of a plurality of pixels P. In the illustrated example, the pixels P are arranged along the X-axis and Y-axis.

[0129] Although not shown, a plurality of scanning lines and a plurality of data lines are provided on the circuit board 910. For example, the scanning lines extend along the X axis, and the data lines extend along the Y axis. The scanning lines are connected to a scanning line driving circuit 916. The data lines are connected to a data line driving circuit 914. Pixels P are provided at intersections of the scanning lines and the data lines.

[0130] One pixel P includes, for example, one light-emitting device 100, one lens 922, and a pixel circuit (not shown). The pixel circuit includes a switching transistor that functions as a switch for the pixel P. The gate of the switching transistor is connected to a scan line, and either the source or the drain is connected to a data line.

[0131] The data line driving circuit 914 and the scanning line driving circuit 916 are circuits that control the driving of the light emitting devices 100 that constitute the pixels P. The control circuit 918 controls the display of images.

[0132] Image data is supplied from a higher-level circuit to the control circuit 918. The control circuit 918 supplies various signals based on the image data to the data line driving circuit 914 and the scanning line driving circuit 916.

[0133] When the scanning line driving circuit 916 activates a scanning signal to select a scanning line, the switching transistor of the selected pixel P is turned on. At this time, the data line driving circuit 914 supplies a data signal from the data line to the selected pixel P, causing the light emitting device 100 of the selected pixel P to emit light in accordance with the data signal.

[0134] The lens array 920 has a plurality of lenses 922. For example, one lens 922 is provided for each light emitting device 100. Light emitted from the light emitting device 100 is incident on one lens 922.

[0135] The heat sink 930 is in contact with the circuit board 910. The material of the heat sink 930 is, for example, a metal such as copper or aluminum. The heat sink 930 dissipates heat generated by the light emitting device 100.

[0136] The light-emitting devices according to the above-described embodiments can be used for purposes other than projectors and displays. Examples of uses other than projectors and displays include indoor and outdoor lighting, laser printers, scanners, in-vehicle lights, light-using sensing devices, communication devices, and other light sources. Furthermore, the light-emitting devices according to the above-described embodiments can be used as display devices for head-mounted displays.

[0137] The above-described embodiment and modifications are merely examples, and the present invention is not limited to these. For example, the embodiments and modifications can be combined as appropriate.

[0138] The present invention includes configurations that are substantially the same as the configurations described in the embodiments, for example, configurations with the same functions, methods, and results, or configurations with the same purpose and effects. The present invention also includes configurations that replace non-essential parts of the configurations described in the embodiments. The present invention also includes configurations that achieve the same effects or purposes as the configurations described in the embodiments. The present invention also includes configurations that add publicly known technology to the configurations described in the embodiments.

[0139] The following can be derived from the above-described embodiment and modifications.

[0140] One aspect of the light emitting device is A substrate; a laminate provided on the substrate and having a plurality of columnar portions; an insulating layer covering the plurality of columnar portions; and the plurality of columnar portions include a plurality of first columnar portions and a plurality of second columnar portions, the plurality of first columnar portions are some of the plurality of columnar portions provided at the outermost positions of the plurality of columnar portions, each of the plurality of second columnar sections has a light emitting layer, Each of the plurality of first columnar portions has a height smaller than the nearest second columnar portion of the plurality of second columnar portions.

[0141] According to this light emitting device, the insulating layer can be made to adhere well.

[0142] In one embodiment of the light emitting device, a wiring provided in the insulating layer for injecting a current into the light-emitting layer; The wiring may overlap the plurality of first columnar sections when viewed from the direction perpendicular to the substrate.

[0143] According to this light emitting device, the possibility of the wiring being broken can be reduced.

[0144] In one embodiment of the light emitting device, the plurality of columnar portions include a third columnar portion and a fourth columnar portion, the third columnar section is adjacent to one of the plurality of first columnar sections, the fourth columnar section is adjacent to the third columnar section, one of the plurality of first columnar portions, the third columnar portion, and the fourth columnar portion are arranged in a direction away from the outermost of the plurality of columnar portions in the order of one of the plurality of first columnar portions, the third columnar portion, and the fourth columnar portion; the height of the fourth columnar section is smaller than the height of each of the plurality of second columnar sections; the height of the third columnar section is smaller than the height of the fourth columnar section; The height of one of the plurality of first columnar sections may be smaller than the height of the third columnar section.

[0145] According to this light emitting device, the insulating layer can be made to adhere better.

[0146] In one embodiment of the light emitting device, The distance between one of the plurality of first columnar sections and the third columnar section may be greater than the distance between the third columnar section and the fourth columnar section.

[0147] According to this light emitting device, the height of the third columnar section can be made smaller than the height of the fourth columnar section, and the height of the first columnar section can be made smaller than the height of the third columnar section.

[0148] In one embodiment of the light emitting device, The diameter of each of the plurality of first columnar portions may be smaller than the diameter of each of the plurality of second columnar portions.

[0149] According to this light emitting device, the height of the first columnar section can be made smaller than the height of the second columnar section.

[0150] One aspect of the method for manufacturing a light emitting device according to the present invention is to forming a laminate having a plurality of columnar portions on a substrate; forming an insulating layer covering the plurality of columnar portions; and In the step of forming the laminate, forming the plurality of columnar portions having a plurality of first columnar portions and a plurality of second columnar portions; the plurality of first columnar portions are some of the plurality of columnar portions formed at the outermost positions of the plurality of columnar portions, forming the plurality of second columnar sections each having a light emitting layer; Each of the plurality of first columnar portions has a height smaller than the nearest second columnar portion of the plurality of second columnar portions.

[0151] One aspect of the projector is The light emitting device has one aspect.

[0152] One embodiment of the display is The light emitting device has one aspect. [Explanation of symbols]

[0153] 2...first region, 4...second region, 6...third region, 8, 8a, 8b...column, 10...substrate, 20...laminated body, 22...buffer layer, 24...mask layer, 26...opening, 30...columnar portion, 30a, 30a1, 30a2...first columnar portion, 30b, 30b1, 30b2...second columnar portion, 30c...third columnar portion, 30d...fourth columnar portion, 32...first semiconductor layer, 34...MQW layer, 36...second semiconductor layer, 40...insulating layer, 42...contact hole, 50...first electrode, 52...second electrode, 60...first wiring, 62...second wiring, 70...pad, 100...light emitting device, 130...tall columnar portion, 132...low columnar portion, 140...hard mask layer, 150...resist layer, 200, 300, 400, 500...light emitting Device, 800...projector, 802R...first optical element, 802G...second optical element, 802B...third optical element, 804R...first light modulation device, 804G...second light modulation device, 804B...third light modulation device, 806...cross dichroic prism, 808...projection device, 810...screen, 900...display, 910...circuit board, 912...display area, 914...data line drive circuit, 916...scanning line drive circuit, 918...control circuit, 920...lens array, 922...lens, 930...heat sink, 1000...light-emitting device, 1020...laminated body, 1030...columnar portion, 1030a...first columnar portion, 1030b...second columnar portion, 1040...insulating layer, 1060...wiring

Claims

1. A substrate; a laminate provided on the substrate and having a plurality of columnar portions; an insulating layer covering the plurality of columnar portions; and the plurality of columnar portions include a plurality of first columnar portions and a plurality of second columnar portions, the plurality of first columnar portions are some of the plurality of columnar portions provided outermost among the plurality of columnar portions, each of the plurality of second columnar sections has a light emitting layer, Each of the plurality of first columnar portions is closer to the nearest second columnar portion among the plurality of second columnar portions. has a small height, a wiring provided on the insulating layer for injecting a current into the light-emitting layer; The wiring overlaps with the plurality of first columnar sections when viewed from the direction perpendicular to the substrate. light device.

2. In claim 1, the plurality of columnar portions include a third columnar portion and a fourth columnar portion, the third columnar portion is adjacent to one of the plurality of first columnar portions, the fourth columnar portion is adjacent to the third columnar portion, One of the plurality of first columnar portions, the third columnar portion, and the fourth columnar portion are The outermost of the plurality of columnar portions is one of the columnar portions, the third columnar portion, and the fourth columnar portion in this order. lined up in a direction away from each other, the height of the fourth columnar section is smaller than the height of each of the plurality of second columnar sections; the height of the third columnar section is smaller than the height of the fourth columnar section; The height of one of the plurality of first columnar sections is smaller than the height of the third columnar section. light device.

3. In claim 2, The distance between one of the plurality of first columnar portions and the third columnar portion is and the fourth columnar section.

4. In any one of claims 1 to 3, a diameter of each of the plurality of first columnar portions is smaller than a diameter of each of the plurality of second columnar portions; Light-emitting device.

5. A projector comprising the light emitting device according to claim 1 .

6. A display comprising a light-emitting device according to any one of claims 1 to 4.

Images