Plasma processing apparatus including baffle for plasma confining - Patent application

Abstract

A plasma processing apparatus is provided that includes a baffle for plasma confining. [Solution] The plasma processing apparatus of the present invention includes an electrostatic chuck configured to support a substrate inside a chamber, and a baffle including a cylindrical body region and an annular wing region along the edge of the body region, wherein the wing region includes a first set of slits configured to allow at least a portion of the gas provided to the substrate to be discharged.

Description

[Technical Field]

[0001] The present invention relates to a plasma processing apparatus, and more particularly to a plasma processing apparatus including a baffle for plasma confining. [Background technology]

[0002] In a substrate processing apparatus for semiconductor processing, a plasma gas is provided in a processing chamber to process a substrate, and a baffle in the processing chamber refers to a tool provided to control the flow of the plasma gas.

[0003] On the other hand, plasma gas provided on a substrate generally has a non-uniform distribution on the substrate. To maximize the area of ​​the substrate that can be used in semiconductor processing, it is important to distribute the plasma gas uniformly on the substrate. However, there is a problem in that the thickness of the plasma gas layer distributed on the central region of the substrate is generally thicker than the plasma gas layer distributed on the edge region of the substrate. Therefore, a plasma processing technology for uniformly distributing the plasma is required.

[0004] This invention was derived from research conducted as part of the development of oxide dry etching equipment for next-generation 300mm high aspect ratio processes (Project ID: 1415182778, Project ID: P0021943, Ministry of Trade, Industry and Energy, Project Management Agency: Korea Institute for Industrial Technology Advancement, Research Project Name: World Class Plus Project Support, Project Executing Agency: VEM Co., Ltd., Research Period: June 1, 2022 - December 31, 2025).

[0005] On the other hand, in all aspects of this invention, the Korean government, which is the subject of the project, has no financial interest. Summary of the Invention [Problem to be solved by the invention]

[0006] It is an object of the present invention to provide a plasma processing apparatus that includes a baffle for plasma confining. [Means for solving the problem]

[0007] In one embodiment, a plasma processing apparatus includes an electrostatic chuck configured to support a substrate inside a chamber, and a baffle including a cylindrical body region and an annular wing region along an edge of the body region, the wing region including a first set of slits configured to allow at least a portion of a gas provided to the substrate to be exhausted.

[0008] Here, the body region may include a second set of slits configured to allow at least a portion of the gas provided to the substrate to be exhausted.

[0009] Here, the electrostatic chuck may further include a baffle gear connected to the electrostatic chuck and the baffle, the baffle gear moving the electrostatic chuck by a first height and moving the baffle by a second height as the baffle gear rotates by a first angle, the second height being greater than the first height.

[0010] Here, as the baffle gear moves upward, the electrostatic chuck may move upward to a first point, and the baffle may move upward to a second point, the second point being higher than the first point.

[0011] Here, the electrostatic chuck may further include a first ball screw that supports the electrostatic chuck, and a second ball screw that supports the baffle gear.

[0012] Here, the device may further include a first bellows configured to accommodate the first ball screw and a second bellows configured to accommodate the second ball screw, and a vacuum region may be formed between the first bellows and the second bellows.

[0013] Here, the device may further include a pulley connected to the second ball screw and a motor connected to the pulley by a belt, and the motor may be located outside the chamber and provide power to the second ball screw via the belt to minimize the load on the motor due to the vacuum region.

[0014] Here, the body region may include a second set of slits configured to exhaust at least a portion of the gas provided to the substrate, and the position of the second set of slits may be set between the height of the lower end of the electrostatic chuck at the first point and the height of the second point.

[0015] Here, the first set of slits may be arranged along a constant radius from the center of the baffle.

[0016] Here, the first set of slits may include a first subset of slits and a second subset of slits, the first subset of slits being arranged along a first radius from the center of the baffle, and the second subset of slits being arranged along a second radius from the center of the baffle that is greater than the first radius. [Effects of the Invention]

[0017] According to one embodiment of the present invention, there is provided a plasma processing apparatus including a baffle for plasma confining. [Brief explanation of the drawings]

[0018] [Figure 1] FIG. 1 is a diagram illustrating a plasma processing apparatus according to an embodiment. [Figure 2] 10A and 10B are diagrams for explaining the lifting of the electrostatic chuck and the baffle by the baffle gear. [Figure 3] FIG. 10 is a diagram illustrating the electrostatic chuck and the baffle at a point during lift-off. [Figure 4] FIG. 2 is a diagram illustrating a baffle according to an embodiment. [Figure 5] FIG. 2 is a diagram illustrating a baffle according to an embodiment. [Figure 6] FIG. 2 is a diagram illustrating a baffle according to an embodiment. [Figure 7] 10A and 10B are diagrams illustrating a baffle according to another embodiment. [Figure 8] FIG. 10 is a diagram illustrating a baffle according to another embodiment. [Figure 9] FIG. 10 is a diagram illustrating a baffle according to another embodiment. [Figure 10] FIG. 10 is a diagram illustrating a baffle according to another embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0019] The embodiments described in this specification are intended to clearly explain the concept of the present invention to those skilled in the art to which the present invention pertains. Therefore, the present invention is not limited to the embodiments described in this specification, and the scope of the present invention should be construed as including modifications or variations that do not deviate from the concept of the present invention.

[0020] The terms used in this specification are generally used as widely as possible, taking into consideration the functions of the present invention. However, this may change depending on the intentions of those skilled in the art, precedents, or the emergence of new technologies. However, if a specific term is defined and used with a specific meaning, the meaning of that term will be separately described. Therefore, the terms used in this specification should be interpreted based on the substantive meaning of the term and the overall content of this specification, rather than simply by the name of the term.

[0021] The drawings attached to this specification are intended to facilitate the explanation of the present invention, and the shapes shown in the drawings may be exaggerated as necessary to facilitate understanding of the present invention, and therefore the present invention is not limited by the drawings.

[0022] In this specification, if it is determined that a specific description of a known configuration or function according to the present invention may obscure the gist of the present invention, the detailed description thereof will be omitted as necessary.

[0023] FIG. 1 is a diagram illustrating a plasma processing apparatus according to an embodiment.

[0024] 1, the plasma processing apparatus according to one embodiment may include an electrostatic chuck (ESC) 130, a baffle 140, a baffle gear 152, a first ball screw 153, a second ball screw 154, a first bellows 162, and a second bellows 164. Without being limited thereto, the plasma processing apparatus may include fewer or more components than those described above.

[0025] The plasma processing apparatus is an apparatus for processing a substrate 110 used in a semiconductor process, and may be, for example, a processing chamber, but is not limited to this. The plasma processing apparatus can process the substrate 110 using a plasma gas. The plasma processing apparatus may include the substrate 110 therein, an electrostatic chuck 130 that accommodates the substrate 110, a configuration capable of controlling the movement of the electrostatic chuck 130, and a configuration for processing the substrate 110.

[0026] A portion of the plasma processing apparatus may be in a vacuum state. For example, the space within the plasma processing apparatus where the substrate 110 is located may be in a vacuum state for plasma processing. To maintain the vacuum state in the portion of the plasma processing apparatus, the plasma processing apparatus may include a device for maintaining the vacuum state.

[0027] Furthermore, some regions in the plasma processing apparatus may be in a non-vacuum state. For example, a region where a configuration for controlling the movement of the electrostatic chuck 130 is present may be in a non-vacuum state. In this case, the vacuum state region and the non-vacuum state region can be separated so that the states of the respective regions do not change.

[0028] The electrostatic chuck 130 may be configured to support the substrate 110. For example, the electrostatic chuck 130 may support the substrate 110 by attracting the substrate 110. The electrostatic chuck 130 may be elevated within the chamber 100 to reduce the distance to the substrate 110. Specifically, the electrostatic chuck 130 may move toward the substrate 110 using a first ball screw 153 and a first bellows 162 connected to the electrostatic chuck 130. At this time, the first ball screw 153 may be connected to the electrostatic chuck 130 and transmit electrical energy to the electrostatic chuck 130 to facilitate plasma processing of the substrate 110.

[0029] As the electrostatic chuck 130 rises, when the distance between the electrostatic chuck 130 and the substrate 110 becomes equal to or less than a certain distance, the substrate 110 can be attracted to the electrostatic chuck 130 based on static electricity generated in the electrostatic chuck 130. This allows the electrostatic chuck 130 to support and / or fix the substrate 110 in a horizontal state.

[0030] The baffle 140 can be accommodated inside the plasma processing apparatus. The baffle 140 can divide the interior space of the plasma processing apparatus into multiple regions. Specifically, the baffle 140 can be arranged to divide the upper space and the lower space of the electrostatic chuck 130.

[0031] The upper space of the electrostatic chuck 130 may be a space into which plasma gas for processing the substrate 110 is supplied, and the lower space of the electrostatic chuck 130 may be a space from which the plasma gas is discharged. To this end, the baffle 140 may include at least one slit through which the plasma gas passes. After processing of the substrate 110 is completed, the plasma gas may be discharged from the upper space to the lower space of the electrostatic chuck 130 through the slit. Although FIGS. 1 to 3 do not show the at least one slit included in the baffle 140, the slit will be described in detail below with reference to FIGS. 4 to 10.

[0032] The baffle 140 may include a body region 142 configured in a columnar shape. For example, the baffle 140 may include a body region 142 configured in a cylindrical shape. The baffle 140 may also include a wing region 144 provided along an edge of the body region 142. In particular, the wing region 144 may be configured in an annular shape along the edge of the body region. This allows the body region 142 and the wing region 144 to be perpendicular to each other.

[0033] Alternatively, the at least one slit described above may be provided in the fuselage region 142 and / or the wing region 144 of the baffle 140. Specifically, the wing region 144 of the baffle may include a first set of slits, and the fuselage region 142 of the baffle may include a second set of slits.

[0034] The baffle 140 can be configured to rise or fall. Specifically, the baffle 140 can be configured to rise or fall via the baffle gear 152, the second ball screw 154, and the second bellows 164.

[0035] Specifically, one end of the second ball screw 154 may be connected to the baffle gear 152, and the other end of the second ball screw 154 may be connected to a motor using a pulley and a belt. The second ball screw 154 may control the elevation or lowering of the baffle 140 by transmitting the power of the motor to the baffle gear 152. If the motor were located inside the plasma processing apparatus, the operation of the motor may affect the plasma processing of the substrate 110, and the motor may be strained by the vacuum region. Therefore, the motor for controlling the second bellows 164 may be located outside the plasma processing apparatus (specifically, the chamber) and provide power to the second ball screw via a belt.

[0036] The baffle gear 152 may be connected to the electrostatic chuck 130 and the baffle 140. The baffle gear 152 may be connected to a second ball screw 154 and receive power from a motor. The baffle gear 152 may control the movements of the electrostatic chuck 130 and the baffle 140 as it rotates using the power supplied from the motor. When the baffle gear 152 rotates by a first angle, it may move the electrostatic chuck 130 by a first height and the baffle 140 by a second height. The second height may be greater than the first height. That is, the distance moved by the baffle gear 152 may be greater than the distance moved by the baffle gear 152 for the baffle 140.

[0037] As the baffle gear 152 moves upward, the electrostatic chuck 130 moves up to a first point, which is the uppermost point, and the baffle 140 moves up to a second point, which is the uppermost point. In this case, the second point may be higher than the first point.

[0038] Alternatively, there may be an electrostatic chuck gear connected to the electrostatic chuck 130, separate from the baffle gear 152. Specifically, the first baffle gear may be connected to the baffle 140 to control the elevation or lowering of the baffle 140, and the electrostatic chuck gear may be connected to the electrostatic chuck 130 to control the elevation or lowering of the electrostatic chuck 130. In this case, the electrostatic chuck 130 and the baffle 140 may be independently elevated or lowered. However, even in this case, the highest elevation point of the baffle 140 may be higher than the highest elevation point of the electrostatic chuck 130. Therefore, the body region 142 of the baffle 140 may confine the substrate 110.

[0039] FIG. 2 is a diagram for explaining the lifting of the electrostatic chuck and the baffle by the baffle gear.

[0040] 2, it can be seen that the electrostatic chuck 130 and the baffle 140 rise as the baffle gear 152 rotates due to the motor. At this time, it can be seen that the baffle 140 rises to a greater extent than the electrostatic chuck 130, as compared to FIG.

[0041] FIG. 3 is a diagram illustrating the electrostatic chuck and the baffle at one point during the ascent.

[0042] 3, when the baffle gear 152 rotates by a second angle greater than the first angle, the height of the baffle 140 may become greater than the height of the electrostatic chuck 130. As a result, when the baffle gear 152 rotates by a predetermined amount, the baffle 140 may move to a position that confines the electrostatic chuck 130.

[0043] The body region 142 of the baffle 140 is positioned higher than the substrate 110 and can act as a wall to confine the substrate 110. That is, the baffle 140 can concentrate the plasma gas in the region where the substrate 110 is present. This allows the plasma to be distributed uniformly over the substrate 110, so that the thickness of the gas layer on the substrate 110 processed using the plasma gas can be relatively constant in any region.

[0044] 1 again, the first bellows 162 may house the first ball screw 153 therein. Also, the second bellows 164 may house the first bellows 162 and the second ball screw 154 therein. In this case, a vacuum region may be formed between the first bellows 162 and the second bellows 164. Specifically, the region where the substrate 110 is located may be a high vacuum region, and the region between the first bellows 162 and the second bellows 164 may be a sealed vacuum region. Thus, particle issues caused by the movement of the ball screw may be minimized through the sealed vacuum region.

[0045] Hereinafter, the baffle including at least one slit will be described in detail with reference to FIGS.

[0046] 4 to 6 are diagrams illustrating a baffle according to one embodiment.

[0047] 4, baffle 140 may include a first set of slits. The first set of slits may be arranged along a certain radius from the center of baffle 140. In this case, the center of baffle 140 may refer to the origin of the circular baffle in the plan view of FIG.

[0048] The first set of slits may include a first subset slit 145 and a second subset slit 146. The first subset slits 145 may be arranged along a first radius from the center of the baffle 140, and the second subset slits 146 may be arranged along a second radius from the center of the baffle 140. In this case, the second radius may be larger than the first radius. Thus, based on the center of the baffle 140, the first subset slits 145 may be arranged along the center, and the second subset slits 146 may be arranged along the outer surface of the first subset slits 145.

[0049] The shape of the slits included in the first subset slits 145 and the shape of the slits included in the second subset slits 146 may be the same or different. Also, unlike FIG. 4, the slits included in the first subset slits 145 and the slits included in the second subset slits 146 may be arranged to be offset from each other in order to efficiently discharge plasma gas, but this is not limited to this.

[0050] 4, the shapes of the slits included in the first set of slits are all shown as circular bars, but the shape of the slits is not limited to circular bars, and the shapes of the slits may be different. For example, the thickness of the slits may increase with distance from the center of the baffle 140. Also, for example, the number of slits may be set to vary depending on the position of the blade region 144.

[0051] 5 and 6 are diagrams illustrating cross-sectional views of a baffle 140 according to one embodiment.

[0052] Referring to FIG. 5, when the baffle 140 is viewed in cross section, it can be seen that at least one slit is formed in the blade region of the baffle 140.

[0053] 6, a cross section of the baffle 140 when the baffle 140 is moved to a position higher than the electrostatic chuck 130 can be seen. Through at least one slit formed in the baffle 140, plasma gas in the space where the substrate 110 is located (the space above the electrostatic chuck 130) can be discharged to the space where the substrate 110 is not located (the space below the electrostatic chuck 130).

[0054] FIG. 7 is a diagram illustrating a cross-sectional view of a baffle 140 according to another embodiment.

[0055] 7, it can be seen that at least one slit (a second set of slits) is also formed in the body region 142 of the baffle 140. Slits may be formed not only in the wing region 144 of the baffle 140 but also in the body region 142. In this case, the position of the second set of slits may be set according to the point at which the electrostatic chuck 130 and the baffle 140 rise.

[0056] If the second set of slits were also positioned below the lower end of the electrostatic chuck 130, a problem could occur in that the plasma gas discharged through the slits would also be discharged into the space below the electrostatic chuck 130. Therefore, the second set of slits can be positioned between the position where the lower end of the electrostatic chuck 130 is located when the electrostatic chuck 130 is raised to its uppermost point and the position where the baffle 140 is raised to its uppermost point. This allows the plasma gas to be consistently discharged from the space where the substrate 110 is located to the space where it is not located.

[0057] 8 to 10 are diagrams illustrating a baffle according to another embodiment.

[0058] Referring to Figure 8, it can be seen that slits having a different shape from those of Figure 4 are formed in baffle 140. Specifically, the slits of Figure 4 have a shape in which a first subset of slits and a second subset of slits are arranged in two layers. However, the slits of Figure 8 have a shape in which slits are arranged in a single layer rather than two layers. Unlike the shape shown in Figure 8, the first set of slits may be arranged diagonally (like comb teeth) with respect to the origin of baffle 140, so that one end of the slits faces in another direction rather than facing the origin.

[0059] Referring to Figure 9, a cross-sectional view of the baffle 140 of Figure 8 can be seen. A second set of slits can also be formed in the body region 142 of the baffle 140 of Figure 9.

[0060] 10, it can be seen that slits having shapes different from those shown in FIGS. 4 to 9 are formed. The first set of slits formed in the wing region 144 of FIG. 10 may be formed in multiple layers as shown in FIG. 4, or may be formed in multiple circular shapes. As such, the shapes of the slits formed in the fuselage region 142 and / or the wing region 144 of the baffle 140 are not limited to those described in the present specification, and may vary.

[0061] As described above, even though the embodiments have been described by way of limited embodiments and drawings, those skilled in the art can make various modifications and variations from the above description. For example, the described techniques may be performed in a different order than described, and / or the components of the described systems, structures, devices, circuits, etc. may be combined or coupled in a different manner than described, or may be replaced or substituted by other components or equivalents, and still achieve suitable results.

[0062] Accordingly, other implementations, other embodiments, and equivalents of the claims are intended to be within the scope of the following claims.

Claims

1. an electrostatic chuck configured to support a substrate within the chamber; a baffle including a cylindrically configured fuselage region and an annularly configured wing region along an edge of the fuselage region; a baffle gear connected to the electrostatic chuck and the baffle, the baffle gear moving the electrostatic chuck by a first height and moving the baffle by a second height as the baffle gear rotates by a first angle; the wing region includes a first set of slits configured to allow at least a portion of the gas provided to the substrate to be exhausted; The second height is greater than the first height.

2. The plasma processing apparatus of claim 1 , wherein the body region includes a second set of slits configured to allow at least a portion of the gas provided to the substrate to be exhausted.

3. As the baffle gear moves upward, the electrostatic chuck moves upward to a first point, and the baffle moves upward to a second point; The plasma processing apparatus of claim 1 , wherein the second point is higher than the first point.

4. a first ball screw that supports the electrostatic chuck; The plasma processing apparatus of claim 1 , further comprising: a second ball screw supporting the baffle gear.

5. a first bellows configured to accommodate the first ball screw; a second bellows configured to accommodate the second ball screw; 5. The plasma processing apparatus according to claim 4, wherein a vacuum region is formed between said first bellows and said second bellows.

6. a pulley connected to the second ball screw; a motor connected to the pulley by a belt; The plasma processing apparatus of claim 5 , wherein the motor is located outside the chamber and provides power to the second ball screw via the belt to minimize strain on the motor due to the vacuum region.

7. the body region includes a second set of slits configured to allow at least a portion of the gas provided to the substrate to be exhausted; 4. The plasma processing apparatus according to claim 3, wherein the position of the second set of slits is set between the height of the lower end of the electrostatic chuck at the first point and the height of the second point.

8. The plasma processing apparatus of claim 1 , wherein the first set of slits are arranged along a constant radius from a center of the baffle.

9. the first set of slits includes a first subset of slits and a second subset of slits; the first subset of slits are disposed along a first radius from a center of the baffle; The plasma processing apparatus of claim 8 , wherein the second subset of slits are disposed along a second radius from a center of the baffle that is greater than the first radius.

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