Processing apparatus having a storage chamber and an epitaxial reactor

Abstract

A processing apparatus (900) for an epitaxial reactor (1000) of the type for epitaxially depositing layers of semiconductor material at high temperatures on substrates of semiconductor material for the manufacture of electrical components, comprising a reaction chamber (100) for processing substrates, a transfer chamber (200) adjacent to the reaction chamber (100) for transferring substrates arranged on a substrate support device, a loading / unloading group (300) at least partially adjacent to the transfer chamber (200) arranged to accommodate a substrate support device with one or more substrates, and a storage chamber (400) at least partially adjacent to the loading / unloading group (300), comprising a first storage zone (410) for processed and / or unprocessed substrates and a second storage zone (410) for substrates without substrates. A processing apparatus (900) comprising: a storage chamber (300) having a second storage zone (420) for plate support devices; at least one external robot (500) for transporting processed substrates, unprocessed substrates, and substrate support devices having no substrates between the storage chamber (400) and the loading / unloading group (300); and at least one internal robot (600) for transporting substrate support devices having one or more substrates between the loading / unloading group (300) and the reaction chamber (100) via the transport chamber (200), wherein the external robot (500) has an articulated arm (510) configured to handle both processed and unprocessed substrates and substrate support devices.

Description

[Technical Field]

[0001] The present invention relates to a novel concept epitaxial reactor (see, for example, attached FIG. 1), in particular a reactor for epitaxial deposition of silicon carbide onto silicon carbide substrates for electrical and electronic applications. [Background technology]

[0002] Reactors for epitaxial deposition have been known for several decades.

[0003] Reactors for epitaxial deposition of silicon carbide have also been known for a long time, and in the past the applicant himself has filed patent applications in this regard. Summary of the Invention

[0004] The main innovations of the inventive epitaxial reactor are the reservoir chamber (e.g., 400 in FIG. 1), the loading / unloading group (e.g., 300 in FIG. 1), and the transfer chamber (e.g., 200 in FIG. 1). These three elements (chambers), together with the reaction chamber (e.g., 100 in FIG. 1), can be considered as part of the so-called "processing unit" (e.g., 900 in FIG. 1) of the epitaxial reactor (e.g., 1000 in FIG. 1).

[0005] In the reactor according to the present invention, a substrate is placed on a "substrate support device" before the treatment process and removed from the "substrate support device" after the treatment process, and these two operations are automatically performed in a storage chamber. The "substrate support device" can be configured to simultaneously support and transport one or more substrates, which may be inserted into special recesses called "pockets," and thus is a kind of "tray" that is inserted into and extracted from the reaction chamber. In particular, a particularly advantageous "substrate support device" for the reactor according to the present invention has a disk shape and is shown by way of example in the attached Figure 2 (Figure 2A is a top view and Figure 2B is a cross-sectional view), which will be described below.

[0006] A general object of the present invention is to improve upon the prior art.

[0007] This object is achieved by a processing device having the technical features set forth in the appended claims.

[0008] An aspect of the invention is also an epitaxial reactor, said epitaxial reactor comprising a processing device that is the subject of the appended claims.

[0009] In particular, it relates to a reactor for the epitaxial deposition at high temperatures (in particular above 1,300°C and below 1,600°C) of layers of semiconductor material on substrates of semiconductor material for the manufacture of electrical components, whereby the process pressure is usually comprised between 0.03 atm (= 3,000 Pa) and 0.5 atm (= 50,000 Pa).

[0010] More particularly, the invention relates to a reactor for epitaxial deposition configured for extraction from a reaction chamber (processed) substrate at high temperatures (particularly above 400° C., more particularly above 800° C.).

[0011] More particularly, the invention relates to a reactor for epitaxial deposition configured to introduce (untreated) substrates into the reaction chamber at high temperatures (particularly above 400° C., more particularly above 800° C.).

[0012] Advantageously, the substrate to be processed and the substrate to be processed are "substrate supports". Device " is placed on top.

[0013] The present invention will become more readily apparent from the following detailed description, which should be considered in conjunction with the accompanying drawings. [Brief explanation of the drawings]

[0014] [Figure 1] FIG. 1 shows a schematic diagram (which can be considered a top view) of an embodiment of an epitaxial reactor according to the present invention, showing the processing equipment in particular detail. [Figure 2A] FIG. 2A is a (schematic) top view of one embodiment of a "substrate support apparatus" according to the present invention. [Figure 2B] FIG. 2B is a (schematic) cross-sectional view of the "substrate support apparatus" of FIG. 2A. [Figure 3] FIG. 3 shows (schematically) an external robot for the containment chamber of an embodiment of an epitaxial reactor according to the present invention. [Figure 4A] FIG. 4A is a top view of a tool that can be used in combination with the robot of FIG. [Figure 4B] FIG. 4B is a cross-sectional view of a tool that can be used in combination with the robot of FIG. [Figure 5] FIG. 5 is a (schematic) top view of a station for preparing the loading / unloading group of an embodiment of an epitaxial reactor according to the invention. [Figure 6] FIG. 6 shows a schematic diagram (which can be considered as a top view) of an alternative embodiment of an epitaxial reactor according to the invention to that of FIG. 1, with the processing equipment shown in particular detail. DETAILED DESCRIPTION OF THE INVENTION

[0015] As will be readily apparent, there are various ways of actually implementing the present invention, and the present invention is defined in its principal advantageous aspects in the appended claims, and is not limited by either the following detailed description or the appended claims.

[0016] Referring to FIG. 1, an embodiment of an epitaxial reactor 1000 according to the present invention is shown, which includes a so-called “processing unit” 900 .

[0017] The most typical and advantageous application of the present invention is in reactors for epitaxially depositing layers of semiconductor material (especially silicon carbide) on substrates of semiconductor material (especially silicon carbide) for the manufacture of electrical components. These are reactors in which the reaction chamber epitaxial deposition process is carried out at high temperatures (especially above 1,300°C and below 1,800°C) and pressures typically comprised between 0.03 atm (=3,000 Pa) and 0.5 atm (=50,000 Pa); specific tests have been carried out by the applicant, for example, at 1,600°C and 0.1 atm (=10,000 Pa).

[0018] 1 shows an electronic control unit 800 which, depending on its function, can be considered as part of the epitaxial reactor 1000, i.e. the entire system, or of the processing device 900, i.e. its subsystems. In general, an epitaxial reactor can comprise several electronic control units, each dedicated to controlling one or more subsystems. In the example of FIG. 1, the electronic control unit 800 is arranged to control at least the treatment device 900, and for this purpose receives and transmits electrical signals to and from components of the treatment device 900 (this is represented diagrammatically by two large black arrows).

[0019] Generally, epitaxial reactors, including the epitaxial reactor according to the invention, are equipped with a control console, which may also be considered as part of the control unit of the epitaxial reactor.

[0020] The processing unit 900 consists of four basic components: a reaction chamber 100 for processing substrates; a transfer chamber 200 adjacent to the reaction chamber 100; a loading / unloading group 300 at least partially adjacent to the transfer chamber 200; a storage chamber 400 that at least partially contains the loading / unloading group 300;

[0021] It should be noted that chambers 200 and 300 may alternatively be combined to form a single chamber.

[0022] According to a typical and advantageous embodiment of the invention, the reaction chamber is of the type having an inductively heated "hot wall", in particular configured to be at a "high temperature" even when no epitaxial deposition process is in progress, said "high temperature" being lower than the "process temperature" but higher than the "ambient temperature", which may for example be equal to 30-70% of the "process temperature" expressed in degrees Celsius.

[0023] According to exemplary and advantageous embodiments of the present invention, the reaction chamber may have technical features similar to those shown and described in International Patent Applications WO2004053187, WO2004053188, WO2007088420 and WO2015092525, which are incorporated herein by reference.

[0024] According to an exemplary and advantageous embodiment of the present invention, the reaction chamber comprises a susceptor arrangement consisting of four susceptor elements ("walls") that define the reaction and deposition zone, and another susceptor element ("disk" or "cylinder") that is configured to remain inside the reaction and deposition zone and rotate about its axis, at least during the epitaxial deposition process. This other susceptor element is arranged to provide a rest for a "substrate support device," which is arranged to be introduced into the reaction and deposition zone (with one or more unprocessed substrates) before the epitaxial deposition process and extracted from the reaction and deposition zone (with one or more processed substrates) after the epitaxial deposition process, advantageously while the "substrate support device" (and the substrates) are still hot, particularly at temperatures above 500°C or even higher (e.g., 900°C or 1,000°C).

[0025] In the example of FIG. 1, the loading / unloading group 300 advantageously comprises a load lock chamber 300A and (as will be better understood below) a preparation station 300B associated with each other, in particular these two elements being separate but close together (e.g., between 0 cm and 10 cm), alternatively (see FIG. 6), they may be integrated with each other.

[0026] In the example of FIG. 1, load lock chamber 300A is located entirely inside chamber 400 and adjacent to chamber 200.

[0027] In the example of FIG. 1, preparation station 300B is located entirely inside chamber 400.

[0028] Typically, epitaxial reactors include so-called "gate valves" positioned to selectively isolate the reactor chambers. In the case of the reactor of Figure 1, a first "gate valve" is provided between chambers 100 and 200, a second "gate valve" is provided between chambers 200 and 300A, and a third "gate valve" is provided between chambers 300A and 400 (not shown), and a door, preferably sealed, is also provided (not shown) to allow an operator access to the interior of chamber 400 to insert / remove substrates and substrate support devices.

[0029] As already mentioned, the reactor according to the present invention contemplates the use of a "substrate support apparatus."

[0030] The "substrate support device" 2000 of Figure 2 is particularly advantageous for a reactor according to the invention, having a recess (designated 2100 in Figure 2A), a so-called "pocket", a generally circular shape for accommodating a substrate (shown in Figure 2A and designated 2900 in Figure 2B) of approximately the same shape and size as the recess, and a thin edge (designated 2200 in Figure 2A) protruding radially along its entire periphery to facilitate handling of the "substrate support device". The substrate has a so-called "flat"; in the recess (designated 2100 in Figure 2A), there is a plug (designated 2300 in Figure 2A) in the "flat" of the substrate.

[0031] Furthermore, the "substrate support device" 2000 of FIG. 2 can be described by the following set of parts (see especially FIG. 2B). It comprises a circular, plate-like part 2500, simply referred to as a "plate," having a remaining partial surface arranged to support a substrate 2900. In particular, the remaining partial surface has substantially the same shape and size as the substrate and constitutes the bottom of a recess 2100, and a plug (shown as 2300 in FIG. 2A) is conceptually superimposed on the plate 2500. The device 2000 further comprises a first edge portion 2600 that completely surrounds the plate 2500 and extends axially to form a side wall of the recess 2100 (a small portion of this wall is formed by the plug 2300). Finally, the device 2000 comprises a second edge portion 2700 that completely surrounds the first edge portion 2600 and extends radially. The second edge portion 2700 can be said to be a flange located around the first edge portion 2600. Typically, plate 2500 is at a lower level than second edge 2700. Edge 2200 in FIG. 2A substantially corresponds to second edge 2700 in FIG. 2B. It should be noted that the above-mentioned components can be joined to form one or more unitary components; for example, components 2500, 2600, and 2700 can form a unitary component, or component 2500 can form a first unitary component and components 2600 and 2700 can form a second unitary component. It should also be noted that each of the above-mentioned components can be formed by two or more mechanically coupled unitary components; an example for plate 2500 is described below.

[0032] Particularly advantageously, the plate 2500 is divided into an annular portion or portion 2520 and a central portion or portion 2540 joined together, the annular portion or portion 2520 being integral with the first edge portion 2600, and the central portion or portion 2540 being inserted into a hole in the annular portion or portion 2520 and being connected to the "substrate support" by, for example, a movable rod. Device 2000 (particularly, from below in FIG. 2B ); in the absence of such external action, central portion or portion 2540 remains in place by a suitable mechanical connection between portions or portions 2520 and 2540. When substrate 2900 is inserted into recess 2100, raising or lowering central portion or portion 2540 also raises or lowers substrate 2900.

[0033] Particularly advantageously, the remaining surface of plate 2500 is configured such that substrate 2900 is in contact only with a small annular zone of plate 2500 near first edge 2600. For example, said small annular zone may have a width of 1 to 5 mm and / or may be radially distanced 1 to 3 mm from first edge 2600. The distance between substrate 2900 and the central zone of plate 2500 may be, for example, 0.5 to 1.5 mm.

[0034] Generally, according to the present invention, a processing device includes: - a reaction chamber for processing the substrate (100 in the example of Figure 1) a transfer chamber (200 in the example of FIG. 1) adjacent to the reaction chamber (100 in the example of FIG. 1) for transferring a substrate placed on a substrate support device; - a substrate support having one or more substrates Device a loading / unloading group (300 in the example of FIG. 1) at least partially adjacent to the transfer chamber (200 in the example of FIG. 1), which is arranged to accommodate a first storage zone (410 in the example of FIG. 1) for processed and / or unprocessed substrates and a substrate support without substrates; Devicea storage chamber (400 in the example of FIG. 1) at least partially including a loading / unloading group (300 in the example of FIG. 1) and a second storage zone (420 in the example of FIG. 1) for at least one, in particular only one, external robot (500 in the example of FIG. 1 - the robot is symbolically indicated in this figure) for transferring treated substrates, untreated substrates and substrate support devices between the storage chamber (400 in the example of FIG. 1) without substrates and the loading / unloading group (300 in the example of FIG. 1), in particular in the event of, for example, an abnormal operation of the reactor, the external robot can also transfer the substrate support device with the substrate; - in particular only one internal robot (600 in the example of Fig. 1, the robot is symbolically indicated in this figure) for transporting a substrate support device with one or more substrates between a loading / unloading group (300 in the example of Fig. 1) and said reaction chamber (100 in the example of Fig. 1) via a transport chamber (200 in the example of Fig. 1).

[0035] The external robot 500 is located at least partially inside the storage chamber 400 and the internal robot 600 is located at least partially inside the transfer chamber 200 .

[0036] In the example of Figure 1, the external robot 500 is also configured to perform any transfers within the loading / unloading group 300, in particular to transfer a substrate support device having one or more substrates still to be processed from the preparation station 300B to the load lock chamber "300A", and to transfer a substrate support device having one or more substrates that have already been processed from the "load lock" chamber 300A to the preparation station 300B.

[0037] The above mentioned (chamber) elements, especially the loading / unloading group, are used to support the substrate and / or the "substrate support". Device The device may also have an active role in handling the substrate, i.e. may comprise means configured to move the substrate.

[0038] In the reactor according to the present invention, a substrate is placed on a "substrate support device" before a treatment process and is removed from the "substrate support device" after the treatment process, and these two operations are automatically performed by an external robot 500 in a storage chamber (400 in the example of FIG. 1). The support device with the untreated substrate is transferred from a loading / unloading group (300 in the example of FIG. 1), in particular from its load lock chamber, to a reaction chamber (100 in the example of FIG. 1) before the treatment process, and the same support device with the untreated substrate is transferred from the reaction chamber (100 in the example of FIG. 1) to a loading / unloading group (300 in the example of FIG. 1), in particular its load lock chamber, after the treatment process, and these two transfer operations are automatically performed by an internal robot 600.

[0039] It should be noted that typically the same "substrate support apparatus" can be used for several processing processes, and in the example described below, the same apparatus is used for two processes. Before the first processing process, robot 500 takes the "substrate support apparatus" from zone 420 and places it in station 300B, then places (at least) an unprocessed substrate from zone 410 onto the "substrate support apparatus" located in station 300B, robot 500 takes (at least) a processed substrate from the "substrate support apparatus" located in station 300B, and then, before the second processing process, takes (at least) another unprocessed substrate from zone 410 and places it onto the "substrate support apparatus" located in station 300B (e.g., from subzone 410A). Robot 500 removes the other processed substrate from (at least) the "substrate support apparatus." The robot 500 is then placed in station 300B and placed in zone 410 (e.g., in sub-zone 410B), and finally, the robot 500 unloads the "substrate support" from station 300B and places it elsewhere, e.g., in zone 420. As previously mentioned, typically, the external robot 500 is used to place one or more substrates on a substrate support that have not yet been processed. Device from the preparation station 300B to the load lock chamber 300A, and one or more substrates are transferred to the substrate support 300A. Devicefrom the load lock chamber 300A to the preparation station 300B.

[0040] Conceptually, external and internal robots are similar in that they can perform similar operations. Typically, both comprise an articulated arm consisting of three arm members and a so-called "end effector." Note that the third arm member and "end effector" of the internal robot may be equipped with position sensors (e.g., of the "feeler" type) to aid in positioning the "end effector," especially since it is positioned to approach and enter the reaction chamber, which is typically located at very high temperatures (800-1,600°C).

[0041] Innovations relating to storage chambers are described below with non-limiting reference to the accompanying drawings (e.g., those designated 400 in FIG. 1), which is why technical features of example embodiments shown in the drawings are referred to only as "possible."

[0042] The external robot 500 can handle both processed and unprocessed substrates, as well as substrate supports. Device The device may include an articulated arm 510 configured to process the

[0043] The first storage zone 410 can be located on a first side of the storage chamber 400, and the second storage zone 420 can be located on a second side of the storage chamber 400, with the second side being opposite the first side in FIG. 1 taking into account the position of the external robot 500.

[0044] The first storage zone 410 may be divided into a first sub-zone 410A for unprocessed substrates only and a second sub-zone 410B for processed substrates only.

[0045] The storage chamber 400 has a support Device1 ) for test substrates and / or calibration substrates, which may be suitable for use in the event of an abnormal situation requiring operator intervention, for example. According to some example embodiments, in the event of an abnormal situation, the support with the substrates may be Device The second storage Note that the data can be stored in zone 420.

[0046] Advantageously, the electronic control unit of the epitaxial reactor is adapted to store the unprocessed substrate and / or the processed substrate and / or the substrate support in the storage chamber. Device in particular, their respective positioning can be set not only horizontally but also vertically, and advantageously the positioning of a substrate before processing can be different from the positioning of the same substrate after processing. In this way, there is maximum flexibility in positioning.

[0047] Typically, according to the invention, a plurality of substrates can be arranged one above the other at a distance from each other in zones or subzones of a storage chamber in a suitable box. Generally, the box can accommodate both unprocessed and processed substrates.

[0048] Typically, in accordance with the present invention, a plurality of substrate supports Device can be arranged on top of each other and at a distance from each other in zones or sub-zones of the storage chamber in a suitable box.

[0049] According to a first possibility (not shown), the articulated arm comprises a first arm member and a second arm member, the first arm member being hinged to the second arm member, the first arm member being Processed and a first end arranged to handle (particularly grip) an unprocessed substrate; support device and a middle portion hingedly connected to the second arm member.

[0050] The term "gripping" is used herein to indicate a relatively firm contact between a first part, called "gripping," and a second part, called "holding," while the term "handling" only indicates that the two parts are such that they move together.

[0051] According to a second possibility (illustrated by way of example in FIG. 3 ), the articulated arm 510 comprises a first arm member 512 and a second arm member 516, the first arm member 512 being hingedly connected to the second arm member 516, the first arm member 512 having a first end 513 arranged to handle both processed and unprocessed substrates and a substrate support device, and a second end 514 hingedly connected to the second arm member 516.

[0052] The articulated arm 510 may also include a base 520 .

[0053] The articulated arm 510 may also include a lifting column 511 mounted on a base 520 .

[0054] The articulated arm 510 may also include a third arm member 517 hinged at a first end to the second arm member 516 and at a second end to the lifting column 511 .

[0055] The first arm member 512 may have or be associated with a so-called "end effector" 515, typically at the first end portion 513, which according to the exemplary embodiment (typical and advantageous) of FIG. 3 may comprise a "two-pronged fork."

[0056] The first end 513 (particularly the "end effector" 515) can be arranged to mate with a tool 519 (see FIG. 4) arranged to grip the substrate support device; said gripping is typically direct, and may be by friction, or in some cases by suction.

[0057] The first end portion 513 (particularly the "end effector" 515) may be arranged to grip a substrate, said gripping being typically direct and may be by friction and suction, or may be arranged to couple with another tool (not shown) arranged to grip a substrate, said gripping being typically direct and may be by friction and possibly suction.

[0058] Thanks to the tool, the backside of the board is supported. Device It cannot be contaminated by particles and / or substances present on the backside of the device.

[0059] 4 shows an embodiment of a tool generally designated by the reference numeral 519. It is essentially a disk, with an upper surface positioned to contact a substrate support device and a lower surface positioned to contact an "end effector" (see especially FIG. 3). The lower surface preferably has a shoulder 519-1 into which the "end effector", particularly two of its "tips", can be inserted on opposite sides of the axis of the tool. The upper surface has a shoulder 519-2 into which the substrate support can be inserted. Device Preferably, there is a thin recess 519-2 arranged to compensate for any non-perfect planarity of the tool 519. To allow stable and accurate positioning of the tool 519, an axial hole, e.g., cylindrical or conical, e.g., a through hole or a blind hole, can typically be provided.

[0060] For handling, and in particular for grasping, the articulated arm 510 can be equipped with a suction duct. In FIG. 3, the suction duct 518 is shown inside only the first arm member 512, but alternatively it may be inside the second arm member 516 and / or the third arm member 517. The suction duct must be fluidly connected to a suction generator (not shown), for example by a flexible tube. The suction duct 518 opens into the surface of the "end effector" 515 and is adapted to suck objects that come into contact with the "end effector." This may be a suction that is localized at a point, or preferably distributed over an area (for example, a strip extending in a "U" shape in a similar manner to the "end effector" 515).

[0061] The storage chamber 400 can have a resting position 450 for a tool 519. In this case, the external robot 500 can be positioned to take the tool 519 to / from the resting position 450, and in particular, if the robot has to handle a support device, the "end effector" 515 can approach the resting position 450, engage with the tool 519, move away from the resting position 450, handle the support device, approach the resting position 450, and remove the tool 519. uncoupling and moves away from rest position 450.

[0062] Innovations relating to loading / unloading groups are described below with non-limiting reference to the accompanying drawings (e.g., those designated 300 in FIG. 1), which is why technical features of example embodiments shown in the drawings are referred to only as "possible."

[0063] The loading / unloading group 300, and in particular the preparation station 300B (as shown in FIG. 5), may include a base 310 for supporting a substrate support device.

[0064] The loading / unloading group 300, and in particular the preparation station 300B (as shown in FIG. 5), may include a vertical movement means 320 for raising / lowering one or more substrates placed on a substrate support device supported by a base 310.

[0065] The vertical movement means 320 may comprise a movable rod arranged to raise / lower a center portion of the substrate support apparatus and the substrate placed thereon (consider, for example, the movable center portion or side 2540 of apparatus 2000 in FIG. 2B), where the diameter of the substrate is typically larger than the diameter of the center portion.

[0066] The base 310 can be arranged to rotate the substrate support device (resting on the base) through a (variable) angle, in particular a (variable) angle in the range of -360° (or more) to 360° (or more).

[0067] The loading / unloading group 300 , particularly the preparation station 300 B (as shown in FIG. 5), may include horizontal movement means 330 for adjusting the horizontal position of the substrate support device supported by the base 310 .

[0068] The horizontal movement means 330 may include at least one rotatable cam (in the embodiment of Figure 5 three cams 330A, 330B, 330C are advantageously provided) arranged to cause displacement of the substrate support device.

[0069] The loading / unloading group 300, and in particular the preparation station 300B (as shown in FIG. 5), may include a cleaning means 340 for the substrate support device supported by the base 310.

[0070] The cleaning means 340 may, for example, comprise at least one suction device arranged to cause suction from the top and / or sides of the peripheral area of ​​the substrate support device, in the embodiment of Figure 5 the suction area being small (e.g., a few millimeters) but alternatively large (e.g., a few centimeters) or very large and extending at most around the entire circumference, in the embodiment of Figure 5 the suction device being rotatable, a first angular position being used for suction from the edge and a second angular position (shown in Figure 5) being for rest.

[0071] The processing device 900 may be equipped with a camera 350 (which may be referred to as a "monitoring camera") directed toward the area of ​​interest 360 of the loading / unloading group 300, in particular the preparation station 300B (as shown in FIG. 5), and in particular the camera 350 frame includes at least the support base 310 and therefore any substrate support device mounted on the base 310.

[0072] The camera can for example operate in visible light, in which case the natural light of the environment in which the reactor is located can be used or lighting devices can be provided.

[0073] It may be advantageous for the camera to also operate in IR and / or UV light; in this case, corresponding lighting devices are required. The combination of several types of light may be useful in reliably recognizing the contours of various elements in the image captured by the camera.

[0074] The rotation angle of the substrate support device (mounted on the base 310 ) can be arranged to be calculated (eg by the electronic control unit 800 ) starting from the image produced by the camera 350 .

[0075] The displacement of the substrate support device (mounted on the base 310 ) can be arranged to be calculated (for example by the electronic control unit 800 ) starting from the image produced by the camera 350 .

[0076] The loading / unloading group 300, particularly the load lock chamber 300A, may include a cover (not shown) arranged to be selectively opened and closed by rotation, and may include a gate valve (also arranged to be selectively opened and closed) between the transfer chamber 200 and the load lock chamber 300A. In particular, when the cover is open, the load lock chamber 300A is in communication with the storage chamber 400, and when the cover 370 is closed, the load lock chamber 300A is not in communication with the storage chamber 400.

[0077] Innovations relating to the transport chamber are described below with non-limiting reference to the accompanying drawings (e.g., those shown at 200 in FIG. 1), which is why the technical features of the example embodiments shown in the drawings are referred to only as "possible."

[0078] The processing apparatus 900 may include a cooling station 210 adjacent the transfer chamber 200, which may be configured to cool the substrate support 210 with one or more substrates thereon after a processing process. Device The device is configured to accommodate the following:

[0079] The internal robot 600 a) Transferring a substrate support device with one or more substrates from the reaction chamber 100 to the cooling station 210, typically while the support device and substrates are still very hot, followed by b) transferring the substrate support apparatus with one or more substrates from the cooling station 210 to the loading / unloading group 300, particularly its load lock chamber 300A, typically after the support apparatus and substrates have sufficiently cooled; It can be arranged as follows: Furthermore, the internal robot 600 c) transferring a substrate support device carrying one or more substrates from the loading / unloading group 300, in particular from its load lock chamber 300A, to the reaction chamber 100, typically while the support device carrying one or more substrates is being cooled in the cooling station 210; It can be arranged as follows.

[0080] A possible sequence of actions can be, for example, "A", "c", "b".

[0081] The processing apparatus 900 may also include a heating station 220 adjacent the transfer chamber 200, which may be configured to heat a substrate support 220 having one or more substrates thereon prior to a processing process. Device The device is configured to accommodate the following:

[0082] Station 220 can be used to preheat a substrate support device with one or more substrates, but can also be used simply to facilitate and / or speed up transfer operations through transport chamber 200.

[0083] The internal robot 600 d) transferring a substrate support device with one or more substrates from the loading / unloading group 300, particularly its load lock chamber 300A, to the heating station 220, and then e) transferring the substrate support device with one or more substrates from the heating station 220 to the reaction chamber 100; It must be possible to arrange it as follows.

[0084] A possible sequence of actions can be, for example, "d", "A", "e", "b".

[0085] Further possible innovations are described below.

[0086] Advantageously, the processing equipment can include a code reading and recognition system (e.g., a barcode, QR code, or alphanumeric code) for reading codes on the substrates and / or substrate support devices, this system not shown. Such a system can locate (at least partially) within a storage chamber (e.g., as shown at 400 in FIG. 1 ). In this way, for example, a reactor can keep track of, for example, substrates that have entered the reactor and / or substrates that are still to be processed within the storage chamber and / or substrates that have already been processed within the storage chamber and / or substrates that have exited the reactor. In this way, for example, a reactor can keep track of, for example, supports that have entered the reactor and / or supports (and possibly their positions) located within the storage chamber and / or supports that have been located within the reaction chamber and / or supports that have exited the reactor. Typically, the reading and recognition system cooperates with an electronic control unit (e.g., as shown at 800 in FIG. 1 ) to trace the substrates and / or supports.

[0087] Advantageously, the processing device comprises (at least) one substrate support Device The reactor may be provided with an electronic control unit (e.g., as shown at 800 in FIG. 1) configured to store data relating to the use of the reactor, in particular the number and / or duration and / or type of treatment processes. In this way, for example, the reactor may be equipped with an electronic control unit (e.g., as shown at 800 in FIG. 1) configured to store data relating to the use of the reactor, in particular the number and / or duration and / or type of treatment processes. Device If it detects a particular use condition associated with the reactor, it can decide to prevent its further use and / or notify the operator of the need to clean or replace it.

[0088] Two or more of the innovations described above can be advantageously combined with one another.

[0089] 6, which is an alternative embodiment to that of FIG. 1 (but very similar, as is evident from the similarity between the two figures), the loading / unloading group 300 consists of an associated, and particularly advantageously integrated, load lock chamber 300A and a preparation station 300B. According to this exemplary embodiment, the processing device can be considered to comprise a load lock chamber having the usual two gate valves, but with additional functionality relative to a conventional load lock chamber.

[0090] This "integrated" solution makes it possible to avoid the displacement of the "substrate support device" and the substrate by an internal robot, i.e. between the load lock chamber and the preparation station, but complicates the construction of the load lock chamber, or rather the construction of the loading / unloading group.

[0091] In the case of the embodiment example of FIG. 6, the technical features described with reference to FIG. 5 can also be referred to as a preparation station 300B integrated within the loading / unloading group 300.

Claims

1. 1. A processing apparatus (900) for an epitaxial reactor (1000) of the type for epitaxially depositing at high temperature a layer of semiconductor material on a substrate of semiconductor material for the manufacture of electrical components, comprising: a reaction chamber (100) for processing a substrate; a transfer chamber (200) adjacent to the reaction chamber (100) for transferring a substrate disposed on a substrate support device; a loading / unloading group (300) at least partially adjacent to the transfer chamber (200) arranged to accommodate a substrate support device having one or more substrates; a storage chamber (400) at least partially adjacent to the loading / unloading group (300), the storage chamber (400) having a first storage zone (410) for processed and / or unprocessed substrates and a second storage zone (420) for substrate-free substrate support devices; at least one external robot (500) for transporting processed substrates, unprocessed substrates, and substrate support devices without any substrates between the storage chamber (400) and the loading / unloading group (300); at least one internal robot (600) for transferring a substrate support device having one or more substrates between the loading / unloading group (300) and the reaction chamber (100) through the transfer chamber (200); Including, the external robot (500) comprises an articulated arm (510) configured to handle both processed and unprocessed substrates and substrate support devices; the storage chamber (400) has a third storage zone for a substrate support device having a substrate; the third storage zone is configured for use in the event of an abnormal situation; said articulated arm (510) including a first arm member (512) and a second arm member (516); a first arm member (512) hinged to a second arm member (516), the first arm member (512) having a first end (513) configured to handle both processed and unprocessed substrates and the substrate support device, and a second end (514) hinged to the second arm member (516); The processing device (900), wherein the first end (513) is arranged to couple with a tool (519) arranged to grip a substrate support device.

2. 2. The processing apparatus (900) of claim 1, wherein the first storage zone (410) is located on a first side of the storage chamber (400) and the second storage zone (420) is located on a second side of the storage chamber (400), the second side being opposite the first side.

3. 3. The processing apparatus (900) of claim 1 or claim 2, wherein the first storage zone (410) is divided into a first subzone (410A) for unprocessed substrates only and a second subzone (410B) for processed substrates only.

4. The processing device (900) according to any one of claims 1 to 3, wherein an electronic control unit provides the possibility to program the positioning of unprocessed substrates and / or processed substrates and / or substrate support devices in said storage chamber (400).

5. The processing device (900) of claim 4, wherein the positioning can be set horizontally and vertically.

6. The processing apparatus (900) of claim 5, wherein the substrate positioning can be set differently before and after processing.

7. The processing apparatus (900) of any one of claims 1 to 6, wherein the first end (513) is positioned to grip a substrate.

8. The processing apparatus (900) of any one of claims 1 to 6, wherein the first end (513) is arranged to couple with a tool different from the tool (519) and arranged to grip a substrate.

9. 9. The processing device (900) of claim 1, wherein the storage chamber (400) has a rest position (450) for the tool (519), and the external robot (500) is arranged to transport the tool (519) to or from the rest position (450).

10. The processing device (900) of any one of claims 7 to 9, wherein the articulated arm (510) includes a suction duct (518), the suction duct (518) opening at least a first end of the arm member.

11. 11. An epitaxial reactor (1000) of the type for epitaxially depositing at high temperatures, in particular at temperatures above 1300°C, layers of semiconductor material on substrates of semiconductor material for the manufacture of electrical components, the epitaxial reactor (1000) comprising a processing device (900) according to any one of claims 1 to 10.

12. 12. Epitaxial reactor (1000) according to claim 11, of the type arranged to extract the substrate from the reaction chamber at high temperatures, in particular above 400°C, more in particular above 800°C.

13. Epitaxial reactor (1000) according to claim 11 or claim 12, of the type arranged to introduce a substrate into the reaction chamber at an elevated temperature, in particular above 400°C, in particular above 800°C.

14. The epitaxial reactor (1000) of any one of claims 11 to 13, wherein the unprocessed substrate and the processed substrate are placed on a substrate support device.

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