Vacuum processing apparatus and vacuum processing method

Abstract

To provide a vacuum treatment apparatus that improves productivity, and to provide a vacuum treatment method.SOLUTION: A vacuum treatment apparatus includes a cylindrical sputtering target, a magnetic field generating mechanism, a control device and a vacuum vessel. The sputtering target includes: a first principal surface for emitting sputtering particles; and a second principal surface located on an opposite side to the first principal surface. The magnetic field generating mechanism includes a plurality of magnetic circuit parts arranged in parallel in one axial direction while being opposite to the second principal surface and is configured to be capable of changing a position of a magnetic flux generated from a pair of magnetic circuit parts disposed at both ends in the one axial direction in the plurality of magnetic circuit parts. The control device controls the position of the magnetic flux to divert a discharged plasma, which is formed while being opposite to the first principal surface, to ends of the sputtering target. The vacuum vessel accommodates the sputtering target and the magnetic field generating mechanism.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present invention relates to a vacuum processing apparatus and a vacuum processing method. [Background technology]

[0002] In vacuum processing apparatuses that realize sputtering film formation, rotary targets that have a longer service life and require a longer replacement cycle than flat sputtering targets are sometimes used instead of flat sputtering targets (see, for example, Patent Document 1). [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Publication No. 2018-131673 Summary of the Invention [Problem to be solved by the invention]

[0004] When such a rotary target is used for a long period of time, sputtering particles may redeposit on non-erosion areas of the sputtering target (for example, on both ends of the sputtering target), forming a redeposited film in the non-erosion areas. Such redeposited film may peel off from the sputtering target, causing dust generation in the vacuum processing equipment.

[0005] One way to prevent this dust generation is to periodically interrupt the sputtering deposition process and manually remove the redeposited film from non-erosion areas (e.g., polishing). However, this process requires the vacuum processing equipment to be exposed to the atmosphere, which hinders productivity improvements in the deposition process.

[0006] In view of the above circumstances, an object of the present invention is to provide a vacuum processing apparatus and a vacuum processing method that improve productivity. [Means for solving the problem]

[0007] In order to achieve the above object, a vacuum processing apparatus according to one aspect of the present invention includes a cylindrical sputtering target, a magnetic field generating mechanism, a control device, and a vacuum vessel. The sputtering target includes a first major surface that emits sputtering particles and a second major surface opposite the first major surface. The magnetic field generating mechanism has a plurality of magnetic circuit units facing the second main surface and arranged side by side in a uniaxial direction, and is configured so that the position of the magnetic flux emitted from a pair of magnetic circuit units arranged at both ends in the uniaxial direction among the plurality of magnetic circuit units can be changed. The control device controls the position of the magnetic flux, and can divert the discharge plasma formed opposite the first main surface to an end of the sputtering target. The vacuum vessel accommodates the sputtering target and the magnetic field generating mechanism.

[0008] Such a vacuum processing apparatus will further improve productivity.

[0009] In the vacuum processing apparatus, the first main surface may have an erosion region where the first main surface is sputtered by the discharge plasma and a non-erosion region outside the erosion region, and the control device may be capable of moving the discharge plasma to the non-erosion region.

[0010] In such a vacuum processing apparatus, the productivity can be further improved by the control of the control device.

[0011] In the vacuum processing apparatus, the control device may control the discharge plasma to move to the non-erosion region after releasing the sputtering particles from the erosion region, and sputter the non-erosion region.

[0012] In such a vacuum processing apparatus, the productivity can be further improved by the control of the control device.

[0013] In the vacuum processing apparatus, the magnetic field generating mechanism has a rotation mechanism that can rotate the multiple magnetic circuit units around the central axis of the sputtering target, and the control device, when controlling sputtering of the erosion region, may control the multiple magnetic circuit units to be positioned at a first rotation position to sputter the erosion region, and when controlling sputtering of the non-erosion region, may control the multiple magnetic circuit units to be positioned at a second rotation position different from the first rotation position to sputter the non-erosion region.

[0014] In such a vacuum processing apparatus, the productivity can be further improved by the above control.

[0015] In the vacuum processing apparatus, the magnetic field generating mechanism has a moving mechanism capable of changing the distance between each of the plurality of magnetic circuit units and the sputtering target, When controlling the sputtering of the non-erosion region, the control device may control the sputtering of the non-erosion region by increasing the distance between the remaining magnetic circuit units, excluding the pair of magnetic circuit units, from the plurality of magnetic circuit units and the sputtering target, greater than when sputtering the erosion region.

[0016] In such a vacuum processing apparatus, the productivity can be further improved by the above control.

[0017] In order to achieve the above object, a vacuum processing method according to one aspect of the present invention includes providing the sputtering target and the magnetic field generating mechanism, In a reduced pressure atmosphere, the position of the magnetic flux is changed, and the discharge plasma formed opposite to the first main surface is diverted to an end of the sputtering target, and the first main surface is plasma-treated.

[0018] Such a vacuum processing method further improves productivity.

[0019] In the vacuum processing method, the first main surface may have an erosion region where the first main surface is sputtered by the discharge plasma and a non-erosion region outside the erosion region, the discharge plasma may be moved to the non-erosion region to perform plasma processing on the first main surface, and a redeposition film formed by the sputtered particles released from the erosion region and deposited on the non-erosion region may be removed by the plasma processing.

[0020] In such a vacuum processing method, the productivity is further improved by the above method.

[0021] In the vacuum processing method, after the sputtering particles are emitted from the erosion region, the discharge plasma may be moved to the non-erosion region to sputter the non-erosion region.

[0022] In such a vacuum processing method, the productivity is further improved by the above method.

[0023] In the vacuum processing method, the magnetic field generating mechanism has a rotation mechanism that can rotate the plurality of magnetic circuit units around the central axis of the sputtering target, When sputtering the erosion region, the plurality of magnetic circuit units are positioned at a first rotation position to sputter the erosion region; When sputtering the non-erosion region, the plurality of magnetic circuit portions may be positioned at a second rotation position different from the first rotation position, and the non-erosion region may be sputtered.

[0024] In such a vacuum processing method, the productivity is further improved by the above method.

[0025] In the vacuum processing method, the magnetic field generating mechanism has a moving mechanism that can change the distance between each of the plurality of magnetic circuit units and the sputtering target, When sputtering the non-erosion region, the distance between the remaining magnetic circuit portions excluding the pair of magnetic circuit portions from the plurality of magnetic circuit portions and the sputtering target may be made greater than when sputtering the erosion region, and the non-erosion region may be sputtered.

[0026] In such a vacuum processing method, the productivity is further improved by the above method. [Effects of the Invention]

[0027] As described above, the present invention provides a vacuum processing apparatus and a vacuum processing method that improve productivity. [Brief explanation of the drawings]

[0028] [Figure 1] FIG. 2 is a schematic cross-sectional view showing a sputtering target mechanism included in the vacuum processing apparatus of the present embodiment. [Figure 2] 1A and 1B are schematic plan views showing the arrangement of magnets included in the magnetic circuit section, and FIG. 1C is a schematic perspective view showing the arrangement. [Figure 3] 1 is a schematic cross-sectional view showing a vacuum processing apparatus according to an embodiment of the present invention. [Figure 4] 10 is a schematic cross-sectional view showing the movement of a magnetic field leaking to the sputtering surface of the target. FIG. [Figure 5] 10A and 10B are schematic cross-sectional views showing the movement of discharge plasma in the vicinity of the sputtering surface. [Figure 6] 5A to 5C are schematic cross-sectional views showing the operation of the vacuum processing apparatus according to the first modified example of the present embodiment. [Figure 7] 10A to 10C are schematic cross-sectional views showing the operation of a vacuum processing apparatus according to Modification 2 of the present embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0029] Hereinafter, an embodiment of the present invention will be described with reference to the drawings. XYZ axis coordinates may be introduced in each drawing. Furthermore, the same components or components having the same functions may be assigned the same reference numerals, and after describing the components, the description may be omitted as appropriate. Furthermore, the numerical values ​​shown below are examples and are not limited to these examples.

[0030] Fig. 1 is a schematic cross-sectional view showing a sputtering target mechanism included in the vacuum processing apparatus of this embodiment. Fig. 1 shows a sputtering target mechanism 1 (hereinafter referred to as target mechanism 1) and a substrate 90. The substrate 90 and the target mechanism 1 face each other. Sputtering particles emitted from the target mechanism 1 are deposited on the substrate 90.

[0031] The target mechanism 1 includes a sputtering target 20 (hereinafter referred to as the target 20) and a magnetic field generating mechanism 30. The target mechanism 1 is used as a cathode electrode when forming a film by sputtering on a substrate 90 in a reduced pressure atmosphere.

[0032] The target 20 has a sputtering material 21 formed in a layer shape and a metal substrate 22 (backing plate) that supports the sputtering material 21. The target 20 includes a sputtering surface (first main surface) 201 that emits sputtering particles by discharge plasma, and a back surface (second main surface) opposite the sputtering surface 201. The sputtering surface 201 faces the substrate 90. The length of the target 20 is configured to be longer than the length of the substrate 90 in the X-axis direction, and both ends 20e of the target 20 protrude from the substrate 90.

[0033] The sputtering material 21 includes at least one of metals such as Al, tantalum, titanium, molybdenum, gallium, copper, nickel, chromium, nickel-chromium alloy (NiCr), copper-nickel alloy (CuNi), etc., oxides such as indium tin oxide (ITO) and niobium oxide, etc., and semiconductors such as silicon.

[0034] The magnetic field generating mechanism 30 faces the back surface 202 of the target 20. The magnetic field generating mechanism 30 has a plurality of magnetic circuit units 311-319 and a plurality of moving mechanisms 331-339. The moving mechanisms 331-339 are fixed to a base body (not shown). In the example of FIG. 1, among the magnetic circuit units 311-319, at least three magnetic circuit units 313, 314, and 315 face the substrate 90. Note that the number of magnetic circuit units is merely an example and is not limited to the number shown. Furthermore, the number of magnetic circuit units facing the substrate 90 is merely an example and is not limited to the number shown.

[0035] The magnetic circuit units 311 to 319 are arranged side by side in a non-contact manner with a predetermined clearance in one axial direction. The magnetic circuit units 311 to 319 face the rear surface 202 of the target 20. In this embodiment, the one axial direction is defined as the X-axis direction. The direction perpendicular to the X-axis direction is defined as the Y-axis direction or the Z-axis direction. The Z-axis direction is the direction in which the magnetic field generating mechanism 30 faces the target 20. The Y-axis direction is the direction perpendicular to the X-axis and Z-axis directions. The magnetic circuit units 312 to 318 other than the magnetic circuit units 311 and 319 arranged at both ends in the X-axis direction may be integrally configured.

[0036] The moving mechanisms provided in the magnetic field generating mechanism 30 can change the distance between each of the magnetic circuit units 311-319 and the target 20. For example, each of the moving mechanisms 331-339 can independently move the distance between its corresponding magnetic circuit unit and the target 20. Each of the moving mechanisms 331-339 includes a servo motor, a stepping motor, a position detection sensor, a rotational position sensor, etc. Each of the moving mechanisms 331-339 is controlled by a control device 40 (described later).

[0037] For example, the moving mechanism 331 moves the position of the magnetic circuit unit 311 to change the distance between the magnetic circuit unit 311 and the rear surface 202. The moving mechanism 332 moves the position of the magnetic circuit unit 312 to change the distance between the magnetic circuit unit 312 and the rear surface 202. The moving mechanism 333 moves the position of the magnetic circuit unit 313 to change the distance between the magnetic circuit unit 313 and the rear surface 202. The moving mechanism 334 moves the position of the magnetic circuit unit 314 to change the distance between the magnetic circuit unit 314 and the rear surface 202. The moving mechanism 335 moves the position of the magnetic circuit unit 315 to change the distance between the magnetic circuit unit 315 and the rear surface 202. The moving mechanism 336 moves the position of the magnetic circuit unit 316 to change the distance between the magnetic circuit unit 316 and the rear surface 202. The moving mechanism 337 moves the position of the magnetic circuit unit 317 to change the distance between the magnetic circuit unit 317 and the rear surface 202. The movement mechanism 338 moves the position of the magnetic circuit part 318 and changes the distance between the magnetic circuit part 318 and the rear surface 202. The movement mechanism 339 moves the position of the magnetic circuit part 319 and changes the distance between the magnetic circuit part 319 and the rear surface 202.

[0038] 2(a) and 2(b) are schematic plan views showing the arrangement of magnets included in the magnetic circuit unit, and FIG. 2(c) is a schematic perspective view showing the arrangement. Also, FIG. 2(a) shows one of the magnetic circuit units 311 and 319 as viewed from the back surface 202 of the target 20, and one of the magnetic circuit units 311 and 319 as cut along the YZ-axis plane (AA cross section). FIG. 2(b) shows one of the magnetic circuit units 312 to 318 as viewed from the back surface 202 of the target 20, and one of the magnetic circuit units 312 to 318 as cut along the YZ-axis plane (BB cross section).

[0039] 2(a) and 2(b), the magnet sections 31, 32 and the magnet sections 33, 34 are arranged in an arc shape because it is assumed that the target 20 is a cylindrical rotary target. When the target 20 is a cylindrical rotary target, at least one of the ends 20e of the target 20 is supported by a rotation mechanism (not shown).

[0040] Here, the side of each of the magnet units 31-34 facing the target 20 is referred to as the front side of the magnet units 31-34, and the side of each of the magnet units 31-34 not facing the target 20 is referred to as the back side of the magnet units 31-34. A yoke plate (not shown) is disposed on the back side of the magnet units 31-34. The magnet units 31-34 are supported from their back sides by the yoke plate (not shown). Therefore, on the back side of the magnet units 31-34, the magnetic field lines emitted by the magnet units 31-34 are absorbed by the yoke plate, and no loop magnetic field is formed. Note that the target 20 is not limited to a cylindrical rotary target, and may be a planar target.

[0041] As shown in FIG. 2(a), the magnetic circuit units 311, 319 include a magnet unit 31 (first magnet unit) extending in the X-axis direction, a U-shaped magnet unit 32 (second magnet unit) surrounding the magnet unit 31, and a coil unit 35. The magnet unit 31 further includes a magnet unit 31A and a magnet unit 31B aligned with the magnet unit 31A in the X-axis direction. The magnet unit 31A is further surrounded by the coil unit 35. The magnet unit 32 is open on the side surrounded by the dashed line a. The side surrounded by the dashed line a corresponds to the side on which the magnetic circuit units 312 to 318 are located.

[0042] For example, in magnet section 31, the south pole (first pole) is exposed on the surface facing rear surface 202 of target 20, and in magnet section 32, the north pole (second pole) opposite to the south pole is exposed on the surface. For example, in magnet section 31, the south pole faces rear surface 202 of target 20, and in magnet section 32, the north pole faces rear surface 202 of target 20. In magnet section 31A, the south pole is exposed from coil section 35.

[0043] The magnetic circuit unit 311 and the magnetic circuit unit 319 are oriented in opposite directions in the X-axis direction. That is, the side of the magnetic circuit unit 311 surrounded by the dashed line a and the side of the magnetic circuit unit 319 surrounded by the dashed line a face each other.

[0044] 2(b), the magnetic circuit units 312 to 318 include a magnet unit 33 (third magnet unit) extending in the X-axis direction and a pair of magnet units 34 (fourth magnet units) extending in the X-axis direction and disposed on both sides of the magnet unit 33. For example, facing the back surface 202 of the target 20, the south pole of the magnet unit 33 is exposed on the surface, and the north pole of the magnet unit 34 is exposed on the surface. That is, the south pole of the magnet unit 33 faces the back surface 202 of the target 20, and the north pole of the magnet unit 34 faces the back surface 202 of the target 20.

[0045] Each of the magnet sections 31 to 34 is, for example, a permanent magnet made of the same material. Note that the magnet section 31A may be an iron core instead of a permanent magnet. In this case, the magnet section 31A and the coil section 35 form an electromagnet. Each of the magnet sections 31B, 32 to 34 may be integrally formed or may be divided in places.

[0046] In magnet units 31A, 31B, 31B, and 32, magnetic field lines are emitted from the north pole at any location surrounding the south pole, form a loop along the way, and reach the south pole close to the north pole (FIG. 2(c)). Similarly, in magnet units 33 and 34, magnetic field lines are emitted from the north pole at any location surrounding the south pole, form a loop along the way, and reach the south pole close to the north pole. As a result, a loop-shaped magnetic field 30g is formed on the side of target 20. This magnetic field 30g penetrates target 20 and leaks out to the vicinity of sputtering surface 201 of target 20.

[0047] Furthermore, a coil magnetic field formed by coil section 35 is superimposed on the magnetic field generated by magnet section 31A. The current flowing in coil section 35 is controlled by control device 40 (described later). By changing the value or direction of the current flowing in coil section 35, the position of the magnetic flux generated by magnet sections 31 and 32 can be changed as appropriate. That is, among the multiple magnetic circuit sections 311 to 319, a pair of magnetic circuit sections 311 and 319 facing both end sections 20e in the X-axis direction are configured so that the position of the magnetic flux generated by magnet sections 31 and 32 can be changed.

[0048] FIG. 3 is a schematic cross-sectional view showing the vacuum processing apparatus of this embodiment.

[0049] The vacuum processing apparatus 2 is, for example, a magnetron sputtering apparatus, and includes a target mechanism 1, a substrate support mechanism 91, a vacuum vessel 10, and a control device 40. In addition, the vacuum processing apparatus 2 is equipped with an adhesion prevention plate, an exhaust mechanism, a vacuum gauge, a gas supply mechanism, and a power supply such as DC, AC, or bipolar, all of which are not shown. The target mechanism 1 (target 20, magnetic field generating mechanism 30), substrate 90, and substrate support mechanism 91 are housed in the vacuum vessel 10.

[0050] In the vacuum processing apparatus 2, at least one target mechanism 1 is provided in a vacuum vessel 10. As an example, in FIG. 3, a plurality of target mechanisms 1 are arranged along a substrate 90. The target mechanism 1 is a film formation source of the vacuum processing apparatus 2.

[0051] In the vacuum processing apparatus 2, film formation may be performed with the positions of the substrate 90 and the group of targets fixed, or film formation may be performed while either the substrate 90 or the group of targets moves in the Y-axis direction. Furthermore, the vacuum processing apparatus 2 may be a single-wafer processing apparatus or may be part of an in-line apparatus.

[0052] The target 20 is a cylindrical target with a sputtering surface 201 as the outer circumferential surface and a back surface 202 as the inner circumferential surface. In the target 20, the sputtering material 21 and the substrate 22 shown in FIG. 1 are concentrically arranged. The magnetic field generating mechanism 30 is arranged inside the target 20. As an example, the target 20 is a so-called rotary target, which rotates around a central axis 20c and is configured to be rotatable around the magnetic field generating mechanism 30. Furthermore, the target mechanism 1 may have a rotation mechanism (not shown) that enables the magnetic field generating mechanism 30 to rotate around the central axis 20c.

[0053] Substrate support mechanism 91 supports substrate 90. Substrate 90 has a rectangular planar shape and includes, for example, a glass substrate having an X-axis dimension of 1800 mm to 3000 mm and a Y-axis dimension of 1500 mm to 3400 mm. Substrate 90 is not limited to a plate-like shape, and may also be a flexible substrate that can be wound into a roll. In this case, a roll-to-roll type substrate transport mechanism is installed in vacuum processing apparatus 2 instead of substrate support mechanism 91.

[0054] The control device 40 automatically controls the vacuum processing performed by the vacuum processing device 2. This vacuum processing includes control of the target mechanism 1 as well as the substrate support mechanism 91, exhaust mechanism, gas supply mechanism, power supply, etc. The control device 40 also receives input of the pressure measured by a vacuum gauge.

[0055] In the vacuum processing apparatus 2, when a discharge gas is introduced into the vacuum chamber 10 and a discharge voltage is applied to the target 20, the discharge gas is ionized near the surface of the sputtering surface 201 of the target 20, and a discharge plasma is generated near the surface of the sputtering surface 201. The sputtering particles emitted from the sputtering surface 201 reach the substrate 90. As a result, a coating containing the sputtering particles is formed on the substrate 90.

[0056] Furthermore, the control device 40 can control the position of the magnetic flux emitted from the magnetic circuit parts 311 and 319 to divert the discharge plasma formed opposite the sputtering surface 201 to the end 20 e of the target 20 .

[0057] In addition, in the vertical direction (floor-ceiling direction) of the vacuum processing apparatus 2, the direction from a group of multiple target mechanisms 1 (hereinafter referred to as the target group) toward the substrate 90 (Z-axis direction) may be considered the vertical direction, the direction in which the target groups are lined up (Y-axis direction) may be considered the vertical direction, or the direction in which any target mechanism 1 extends (X-axis direction) may be considered the vertical direction.

[0058] Furthermore, in this embodiment, not limited to the vacuum processing apparatus 2, a vacuum processing method using the vacuum processing apparatus 2 is provided. For example, target 20 and magnetic field generating mechanism 30 are prepared, and in a reduced pressure atmosphere, the position of the magnetic flux generated by magnetic circuit units 311 and 319 is changed, and discharge plasma formed opposite sputtering surface 201 is diverted to end 20e of target 20, thereby plasma processing of sputtering surface 201 is performed.

[0059] Next, a description will be given of the action (operation) of the vacuum processing apparatus 2. The operation of the vacuum processing apparatus 2 shown below is automatically performed by the control device 40.

[0060] 4(a) and 4(b) are schematic cross-sectional views showing the movement of the magnetic field leaking to the sputtering surface of the target. 4(a) and 4(b) show the state of the magnetic field 30g (magnetic field lines) formed by the magnetic circuit unit 311 shown in FIG.

[0061] 4(a) schematically illustrates the magnetic field 30g (magnetic field lines) formed by the magnet section 31A, the magnet section 32, and the coil section 35 when the inside of the target 20 is viewed from the end 20e of the target 20, and FIG. 4(b) schematically illustrates the magnetic field 30g (magnetic field lines) formed by the magnet sections 31A, 31B, the magnet section 32, and the coil section 35 when the end 20e of the target 20 is viewed from the Y-axis direction. Note that the magnetic circuit section 319, which is paired with the magnetic circuit section 311, forms magnetic field lines similar to those of the magnetic circuit section 311. However, the magnetic field lines formed by the magnetic circuit section 319 are symmetrical with respect to the magnetic circuit section 311, with the center of the target 20 as the base.

[0062] 4(a), positions where the magnetic flux from the N poles on both sides toward the S pole in the middle becomes parallel to the sputtering surface 201 of the target 20 are designated as position P1 (left side of the figure) and position P2 (right side of the figure). In addition, in FIG. 4(b), position P3 is designated as the position where the magnetic flux from the N pole toward the S pole becomes parallel to the sputtering surface 201 of the target 20.

[0063] 4(a) and 4(b), the magnetic field (magnetic field lines) formed by magnet sections 31A, 31B, and 32 leaks from back surface 202 of target 20 to sputtering surface 201. When discharge plasma is generated near sputtering surface 201, electrons in the discharge plasma are captured by the magnetic field lines that have leaked to sputtering surface 201, and high-density plasma is formed near sputtering surface 201.

[0064] Here, the initial state refers to a state in which no current is passed through the coil portion 35. When current is passed through the coil portion 35, the coil magnetic field formed by the coil portion 35 is superimposed on the magnetic field lines formed by the magnet portion 31A.

[0065] For example, when a current is applied to the coil portion 35 in a counterclockwise direction as viewed from the Z-axis direction, the magnetic field formed by the magnet portion 31A and the coil portion 35 has a higher magnetic flux density than in the initial state due to the so-called right-hand rule. Therefore, positions P1 and P2 shown in Fig. 4(a) move in directions away from each other than in the initial state (broken arrows). Also, position P3 shown in Fig. 4(b) moves in a direction closer to the end portion 20e than in the initial state (broken arrow).

[0066] On the other hand, when a current is passed through the coil portion 35 in the clockwise direction as viewed from the Z-axis direction, the magnetic field strength generated by the magnet portion 31A is weakened by the magnetic field generated by the coil portion 35. As a result, the magnetic field generated by the magnet portion 31A and the coil portion 35 has a lower magnetic flux density than in the initial state. Therefore, positions P1 and P2 shown in FIG. 4(a) move closer to each other than in the initial state (solid arrow). Also, position P3 shown in FIG. 4(b) moves farther from the end portion 20e than in the initial state (solid arrow).

[0067] For example, a gaussmeter was used to confirm that position P3 shown in Fig. 4(b) moved within a range of 11 mm in the X-axis direction on sputtering surface 201 when the coil current was varied from +7 (A) (counterclockwise) to -7 (A) (clockwise). Note that magnetic circuit units 312 to 318 other than magnetic circuit units 311 and 319 are each composed of permanent magnets, and therefore a loop-shaped fixed magnetic field is formed by magnet units 33 and 34 as shown in Fig. 2(c). The magnetic field formed by magnetic circuit units 312 to 318 also leaks onto sputtering surface 201.

[0068] 5(a) and 5(b) are schematic cross-sectional views showing the movement of discharge plasma near the sputtering surface. Figures 5(a) and 5(b) show the vicinity of both ends 20e of target 20. Figure 5(a) shows the state during sputtering film formation, and Figure 5(b) shows the state during idling when sputtering film formation is paused.

[0069] For example, when discharge power is applied to the target 20 and a discharge gas (e.g., argon) is ionized between the target 20 and the substrate 90, a discharge plasma 50 is formed near the sputtering surface 201 of the target 20, as shown in FIG. 5(a).

[0070] At this time, a rotation mechanism (not shown) that supports target 20 is exposed at end 20e of target 20. Therefore, control device 40 adjusts the position of discharge plasma 50 so that discharge plasma 50 is not exposed to end 20e of target 20. For example, control device 40 controls the value and direction of the current flowing through coil unit 35 to adjust the position of discharge plasma 50 near end 20e.

[0071] As a result, in the film formation process, an erosion region 203 is formed on the sputtering surface 201, where the sputtering surface 201 is sputtered by the discharge plasma 50, and a non-erosion region 204 is formed outside the erosion region 203, where sputtering is suppressed more than on the sputtering surface 201, or where no sputtering occurs.

[0072] However, in the film formation process, in addition to the sputtering particles emitted from the sputtering surface 201 being deposited on the substrate 90 to form a sputtering film on the substrate 90, the sputtering particles emitted from the sputtering surface 201 may re-adhere to the non-erosion region 204 to form a re-adhesion film in the non-erosion region 204.

[0073] If such a redeposited film peels off from the non-erosion region 204 during the film formation process, the components of the redeposited film will be mixed into the sputtered film formed on the substrate 90, reducing the reliability of the sputtered film.

[0074] One method for preventing the redeposited film from mixing into the sputtered film is to temporarily stop the film formation process, open the vacuum vessel 10 to the atmosphere, and use a polishing tool (file, sandpaper) or the like to remove the redeposited film from the non-erosion region 204. However, this method requires opening the vacuum vessel 10 to the atmosphere and evacuating the vacuum vessel 10 that is open to the atmosphere until the desired reduced pressure atmosphere is reached, which interrupts the film formation process and reduces the yield of the film formation process.

[0075] In contrast to this, in this embodiment, even if a redeposition film is formed in the non-erosion region 204, there is no need to open the region to the atmosphere and then evacuate the region to a vacuum, and the discharge plasma 50 moves to the non-erosion region 204 in the vacuum, thereby performing plasma cleaning of the non-erosion region 204.

[0076] For example, by having control device 40 pass a current of a predetermined current value through coil unit 35 counterclockwise as viewed from the Z-axis direction, position P3 shown in FIG. 4(b) can be moved closer to end portion 20e. As a result, discharge plasma 50 captured by the magnetic field near sputtering surface 201 spreads not only to erosion region 203 but also to non-erosion region 204, exposing non-erosion region 204 to discharge plasma 50. As a result, the redeposition film formed by sputtering particles released from erosion region 203 during the film formation process and deposited in non-erosion region 204 is sputtered by plasma processing using discharge plasma 50 and removed from non-erosion region 204.

[0077] This technique can eliminate the need to open the vacuum chamber 10 to the atmosphere or to evacuate after venting to the atmosphere. This reduces downtime of the vacuum processing apparatus 2 and improves productivity of the film formation process. In particular, if a process for removing redeposition films deposited in the non-erosion region 204 using the discharge plasma 50 is incorporated into the idling time after the film formation process is stopped, the film formation process will not be affected by venting to the atmosphere and evacuating after venting to the atmosphere, and sputtering film formation can be performed efficiently.

[0078] When redeposition films deposited on the non-erosion region 204 during the idling time are removed by the discharge plasma 50, a dummy substrate may be used as the substrate 90 instead of a product substrate.

[0079] (Variation 1)

[0080] 6(a) and 6(b) are schematic cross-sectional views showing the operation of the vacuum processing apparatus according to the first modification of this embodiment.

[0081] The magnetic field generating mechanism 30 may utilize a rotation mechanism (not shown) that can rotate the plurality of magnetic circuit parts 311 to 319 around the central axis 20c of the target 20 as the center.

[0082] For example, as shown in FIG. 6(a), when the control device 40 controls the sputtering of the erosion region 203 during the film formation process, the control device 40 positions the multiple magnetic circuit parts 311-319 at a position facing the substrate 90 (first rotation position) and controls the sputtering of the erosion region 203.

[0083] 6(b), when controlling the non-erosion region 204 during idling, the control device 40 controls the sputtering of the non-erosion region 204 by positioning the magnetic circuit units 311-319 at a rotational position (second rotational position) different from the position shown in FIG. 6(a). Here, the "different rotational position" refers to a position obtained by rotating the magnetic circuit units 311-319 180 degrees about the central axis 20c from a position where the magnetic circuit units 311-319 face the substrate 90. At this 180-degree rotated position, the magnetic circuit units 311-319 face, for example, an adhesion shield (not shown).

[0084] According to this method, the sputtering particles emitted from the sputtering surface 201 are prevented from directly impinging on the substrate 90, and the sputtering particles are deposited on the deposition prevention plate (not shown). This more reliably prevents the substrate 90 from being contaminated with components of the redeposited film.

[0085] (Variation 2)

[0086] 7(a) and (b) are schematic cross-sectional views showing the operation of the vacuum processing apparatus according to the second modification of this embodiment.

[0087] The control device 40 may use the moving mechanisms 331-339 (FIG. 1) to perform control to sputter the non-erosion region 204. For example, the control device 40 may perform control to sputter the non-erosion region 204 by increasing the distance between the target 20 and the remaining magnetic circuit portions 312-318, excluding the pair of magnetic circuit portions 311, 319 from the plurality of magnetic circuit portions 311-319, to be greater than when sputtering the erosion region 203.

[0088] For example, as shown in FIG. 7(a), during the film forming process, the control device 40 controls the sputtering of the erosion region 203 at positions where the distances between each of the plurality of magnetic circuit parts 311 to 319 and the target 20 are the same.

[0089] Also, as shown in Figure 7(b), during idling, the control device 40 moves the multiple magnetic circuit parts 312-318 so that the distance between the multiple magnetic circuit parts 312-318 and the target 20 becomes longer than in the state shown in Figure 7(a), thereby controlling sputtering of the non-erosion region 204.

[0090] According to this method, sputtering of the erosion region 203 is suppressed, and sputtering is selectively performed on the non-erosion region 204. As a result, when removing the redeposited film, consumption of the erosion region 203 is suppressed, and the non-erosion region 204 can be efficiently cleaned.

[0091] Although the embodiments of the present invention have been described above, it is needless to say that the present invention is not limited to the above-described embodiments and various modifications can be made. Each embodiment is not limited to an independent form, and can be combined as far as technically possible. [Explanation of symbols]

[0092] 1...Target mechanism (sputtering target mechanism) 2...Vacuum processing equipment 10...Vacuum container 20...Target (sputtering target) 20c…Central axis 20e...both ends 21...Sputtering material 22...Base material 30...Magnetic field generation mechanism 30g...Magnetic field 31, 31A, 31B, 32, 33, 34...Magnet part 35...Coil section 40...Control device 50...Discharge plasma 90...Substrate 91...Substrate support mechanism 201...Sputtering surface 202…Back side 203...Erosion area 204...Non-erosion area 311, 312, 313, 314, 315, 316, 317, 318, 319...Magnetic circuit section 331, 332, 333, 334, 335, 336, 337, 338, 339...Movement mechanism

Claims

1. a cylindrical sputtering target including a first main surface that emits sputtering particles and a second main surface opposite to the first main surface; a magnetic field generating mechanism that faces the second main surface and has a plurality of magnetic circuit units arranged side by side in one axial direction, and that is configured to change positions of magnetic fluxes generated from a pair of magnetic circuit units that are arranged at both ends in the one axial direction among the plurality of magnetic circuit units; a control device that controls the position of the magnetic flux and diverts the discharge plasma formed facing the first main surface to an end of the sputtering target; a vacuum vessel containing the sputtering target and the magnetic field generating mechanism; Equipped with the first main surface has an erosion region where the first main surface is sputtered by the discharge plasma and a non-erosion region outside the erosion region; The control device moves the discharge plasma to the non-erosion region to perform plasma processing on the first main surface, and removes, by the plasma processing, a redeposition film formed by the sputtering particles emitted from the erosion region and deposited on the non-erosion region. Vacuum processing equipment.

2. 2. The vacuum processing apparatus according to claim 1, the magnetic field generating mechanism has a rotation mechanism that can rotate the plurality of magnetic circuit units around the central axis of the sputtering target, the control device, when controlling the sputtering of the erosion region, controls the sputtering of the erosion region by positioning the plurality of magnetic circuit units at a first rotation position; When controlling the sputtering of the non-erosion region, the plurality of magnetic circuit units are positioned at a second rotation position different from the first rotation position, and the non-erosion region is controlled to be sputtered. Vacuum processing equipment.

3. 3. The vacuum processing apparatus according to claim 1, the magnetic field generating mechanism has a moving mechanism capable of changing the distance between each of the plurality of magnetic circuit units and the sputtering target, When controlling sputtering of the non-erosion region, the control device controls sputtering of the non-erosion region by increasing the distance between the remaining magnetic circuit units, excluding the pair of magnetic circuit units, from the plurality of magnetic circuit units and the sputtering target, compared to when sputtering the erosion region. Vacuum processing equipment.

4. a cylindrical sputtering target including a first main surface that emits sputtering particles and a second main surface opposite to the first main surface; and a magnetic field generating mechanism that faces the second main surface and has a plurality of magnetic circuit units arranged side by side in a single axis direction, and that is configured to change the position of magnetic flux emitted from a pair of magnetic circuit units that are arranged at both ends in the single axis direction among the plurality of magnetic circuit units; A vacuum processing method for plasma processing the first main surface by changing the position of the magnetic flux in a reduced pressure atmosphere and diverting discharge plasma formed facing the first main surface to an end of the sputtering target, comprising: the first main surface has an erosion region where the first main surface is sputtered by the discharge plasma and a non-erosion region outside the erosion region; the discharge plasma is moved to the non-erosion region to perform plasma processing on the first main surface; The sputtering particles emitted from the erosion region are deposited on the non-erosion region to form a redeposition film, which is then removed by the plasma treatment. Vacuum processing method.

5. 5. The vacuum processing method according to claim 4, After the sputtering particles are emitted from the erosion region, the discharge plasma is moved to the non-erosion region and the non-erosion region is sputtered. Vacuum processing method.

6. 6. The vacuum processing method according to claim 4 or 5, the magnetic field generating mechanism has a rotation mechanism that can rotate the plurality of magnetic circuit units around the central axis of the sputtering target, When sputtering the erosion region, the plurality of magnetic circuit units are positioned at a first rotation position to sputter the erosion region; When sputtering the non-erosion region, the plurality of magnetic circuit units are positioned at a second rotation position different from the first rotation position, and the non-erosion region is sputtered. Vacuum processing method.

7. A vacuum processing method according to any one of claims 4 to 6, the magnetic field generating mechanism has a moving mechanism capable of changing the distance between each of the plurality of magnetic circuit units and the sputtering target, When sputtering the non-erosion region, the distance between the remaining magnetic circuit units excluding the pair of magnetic circuit units from the plurality of magnetic circuit units and the sputtering target is set greater than when sputtering the erosion region, and the non-erosion region is sputtered. Vacuum processing method.

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