Nanostructured ink compositions for inkjet printing

Abstract

The present invention relates to the field of nanotechnology. The present disclosure provides a nanostructure composition comprising: (a) at least one organic solvent; (b) at least one population of nanostructures comprising a core and at least one shell, the nanostructures comprising inorganic ligands bound to the surface of the nanostructures; and (c) at least one poly(alkylene oxide) additive. The nanostructure composition comprising at least one poly(alkylene oxide) additive exhibits improved solubility in organic solvents. The nanostructure composition also exhibits improved suitability for use in inkjet printing. The present disclosure also provides a method for fabricating a light-emitting layer using the nanostructure composition.

Description

[Technical Field]

[0001]

[0001] The present disclosure relates to the field of nanotechnology. The present disclosure provides a nanostructure composition comprising: (a) at least one organic solvent; (b) at least one population of nanostructures comprising a core and at least one shell, the nanostructures comprising inorganic ligands bound to a surface of the nanostructures; and (c) at least one poly(alkylene oxide) additive. The nanostructure composition comprising at least one poly(alkylene oxide) additive exhibits improved solubility in organic solvents. The nanostructure composition also exhibits improved suitability for use in inkjet printing. The present disclosure also provides a method for fabricating a light-emitting layer using the nanostructure composition. [Background technology]

[0002]

[0002] Semiconductor nanostructures can be incorporated into various electronic and optical devices. The electrical and optical properties of such nanostructures vary depending on, for example, their composition, shape, and size. For example, the size-tunable nature of semiconductor nanostructures makes them attractive for applications such as electroluminescent devices, lasers, and biomedical labels. Highly luminescent nanostructures are particularly desirable for electroluminescent device applications.

[0003]

[0003] Inkjet printing methods for fabricating electronic devices are known. See, for example, U.S. Patent Application Publication Nos. 2019 / 0062581, 2019 / 0039294, 2018 / 0230321, and 2002 / 0156156, as well as U.S. Patent No. 8,765,014.

[0004]

[0004] U.S. Patent Application Publication No. 2018 / 0230321 discloses inks of CdZnS / ZnS quantum dots (blue), CdZnSeS / ZnS quantum dots (green), and CdSe / CdS / ZnS quantum dots (red) containing oleate and trioctylphosphine ligands. These inks were obtained by adding the quantum dots to a substituted aromatic or heteroaromatic solvent such as 1-methoxynaphthalene, cyclohexylbenzene, 3-isopropylbiphenyl, benzyl benzoate, 1-tetralone, or 3-phenoxytoluene at a concentration of 5% by weight, mixing, and heating until the quantum dots were well dispersed.

[0005]

[0005] WO 2017 / 079255 discloses semiconductor nanocrystals having halometalate ligands, the halometalate ligands having the formula MX3 - , MX4 - or MX4 2- where M is a metal from Group 12 or 13 of the periodic table and X is a halide. Specific halometalate ligands include CdCl3 - , CdCl4 2- , CdI3 - , CdBr3 - , CdBr4 2- , InCl4 - , HgCl3 - , ZnCl3 - , ZnCl4 2- and ZnBr4 2- Semiconductor nanocrystals having halometalate ligands have been prepared by forming a solution of semiconductor nanocrystals capped with the corresponding organic ligands and halometalate anions, and maintaining the solution under conditions that allow ligand exchange between the halometalate anions and the organic ligands to occur. Summary of the Invention

[0006]

[0006] The present disclosure relates to (a) at least one organic solvent; (b) at least one nanostructure comprising a core and at least one shell, the at least one nanostructure comprising inorganic ligands bound to a surface of the nanostructure; (c) at least one poly(alkylene oxide) additive; A nanostructure composition comprising:

[0007]

[0007] In some embodiments, the core in the nanostructure composition comprises at least one of Si, Ge, Sn, Se, Te, B, C, P, BN, BP, BAs, AlN, AlP, AlAs, AlSb, GaN, GaP, GaAs, GaSb, InN, InP, InAs, InSb, ZnO, ZnS, ZnSe, ZnTe, CdS, CdSe, CdSeZn, CdTe, HgS, HgSe, HgTe, BeS, BeSe, BeTe, MgS, MgSe, GeS, GeSe, GeTe, SnS, SnSe, SnTe, PbO, PbS, PbSe, PbTe, CuF, CuCl, CuBr, CuI, Si3N4, Ge3N4, Al2O3, Al2OC or combinations thereof.

[0008] In some embodiments, the core in the nanostructure composition comprises InP.

[0009]

[0009] In some embodiments, at least one shell in the nanostructure composition comprises CdS, CdSe, CdO, CdTe, ZnS, ZnO, ZnSe, ZnTe, MgTe, GaAs, GaSb, GaN, HgO, HgS, HgSe, HgTe, InAs, InSb, InN, AlAs, AlN, AlSb, AlS, PbS, PbO, PbSe, PbTe, MgO, MgS, MgSe, MgTe, CuCl, Ge, Si or an alloy thereof.

[0010] In some embodiments, at least one shell in the nanostructure composition comprises a first shell comprising ZnSe and a second shell comprising ZnS.

[0011] In some embodiments, the inorganic ligands in the nanostructure composition comprise halometalate anions.

[0012] In some embodiments, the halometallate anion in the nanostructure composition is fluorozincate, tetrafluoroborate, or hexafluorophosphate.

[0013] In some embodiments, the halometalate anion in the nanostructure composition has the formula (I)-(III): MX3 - (I);MX 4-x Y x - (II); or MX 4-x Y x 2- (III); (In the formula, M is selected from the group consisting of Zn, Cd, Hg, Cu, Ag, and Au; X is selected from the group consisting of Br, Cl, F, and I; Y is selected from the group consisting of Br, Cl, F, and I; and x is 0, 1 or 2) It has one structure.

[0014] In some embodiments, the halometalate anion in the nanostructure composition is CdCl3 - , CdCl4 2- , CdI3 - , CdBr3 - , CdBr4 2- , InCl4 - , HgCl3 - , ZnCl3 - , ZnCl4 2- or ZnBr4 2- is.

[0015]

[0015] In some embodiments, the inorganic ligands in the nanostructure composition comprise organic cations selected from the group consisting of tetraalkylammonium cations, alkylphosphonium cations, formamidinium cations, guanidinium cations, imidazolium cations and pyridinium cations.

[0016] In some embodiments, the inorganic ligands in the nanostructure composition comprise tetraalkylammonium cations.

[0017] In some embodiments, the inorganic ligand in the nanostructure composition comprises a tetraalkylammonium cation selected from the group consisting of dioctadecyldimethylammonium, dihexadecyldimethylammonium, ditetradecyldimethylammonium, didodecyldimethylammonium, didecyldimethylammonium, dioctyldimethylammonium, bis(ethylhexyl)dimethylammonium, octadecyltrimethylammonium, oleyltrimethylammonium, hexadecyltrimethylammonium, tetradecyltrimethylammonium, dodecyltrimethylammonium, decyltrimethylammonium, octyltrimethylammonium, phenylethyltrimethylammonium, benzyltrimethylammonium, phenyltrimethylammonium, benzylhexadecyldimethylammonium, benzyltetradecyldimethylammonium, benzyldodecyldimethylammonium, benzyldecyldimethylammonium, benzyloctyldimethylammonium, benzyltributylammonium, benzyltriethylammonium, tetrabutylammonium, tetrapropylammonium, diisopropyldimethylammonium, tetraethylammonium, and tetramethylammonium.

[0018] In some embodiments, the organic ligand in the nanostructure composition is ZnF4 - anion and a didecyldimethylammonium cation.

[0019] In some embodiments, the organic ligands in the nanostructure composition comprise alkylphosphonium cations.

[0020]

[0020] In some embodiments, the alkylphosphonium cation in the nanostructure composition is selected from the group consisting of tetraphenylphosphonium, dimethyldiphenylphosphonium, methyltriphenoxyphosphonium, hexadecyltributylphosphonium, octyltributylphosphonium, tetradecyltrihexylphosphonium, tetrakis(hydroxymethyl)phosphonium, tetraoctylphosphonium, tetrabutylphosphonium, and tetramethylphosphonium.

[0021] In some embodiments, the weight percentage of the nanostructures in the nanostructure composition is from about 0.5% to about 10%.

[0022] In some embodiments, the organic solvent in the nanostructure composition has a boiling point of from about 250° C. to about 350° C. at 1 atmosphere pressure.

[0023] In some embodiments, the organic solvent in the nanostructure composition has a viscosity of from about 1 mPa·s to about 15 mPa·s.

[0024] In some embodiments, the organic solvent in the nanostructure composition has a surface tension of from about 20 dynes / cm to about 50 dynes / cm.

[0025] In some embodiments, the organic solvent in the nanostructure composition is selected from the group consisting of alkyl naphthalenes, alkoxy naphthalenes, alkyl benzenes, aryl, alkyl substituted benzenes, cycloalkyl benzenes, C9-C 20 It may be an alkane, a diaryl ether, an alkyl benzoate, an aryl benzoate, or an alkoxy-substituted benzene.

[0026] In some embodiments, the organic solvent in the nanostructure composition is 1-tetralone, 3-phenoxytoluene, acetophenone, 1-methoxynaphthalene, n-octylbenzene, n-nonylbenzene, 4-methylanisole, n-decylbenzene, p-diisopropylbenzene, pentylbenzene, tetralin, cyclohexylbenzene, chloronaphthalene, 1,4-dimethylnaphthalene, 3-isopropylbiphenyl, p-methylcumene, dipentylbenzene, o-diethylbenzene, m-diethylbenzene The alkyl ethers are selected from the group consisting of benzene, p-diethylbenzene, 1,2,3,4-tetramethylbenzene, 1,2,3,5-tetramethylbenzene, 1,2,4,5-tetramethylbenzene, butylbenzene, dodecylbenzene, 1-methylnaphthalene, 1,2,4-trichlorobenzene, diphenyl ether, diphenylmethane, 4-isopropylbiphenyl, benzyl benzoate, 1,2-bi(3,4-dimethylphenyl)ethane, 2-isopropylnaphthalene, dibenzyl ether, and combinations thereof.

[0027] In some embodiments, the organic solvent in the nanostructure composition is 1-methylnaphthalene, n-octylbenzene, 1-methoxynapthalene, 3-phenoxytoluene, cyclohexylbenzene, 4-methylanisole, n-decylbenzene, or a combination thereof.

[0028] In some embodiments, the weight percentage of the organic solvent in the nanostructure composition is from about 70% to about 99%.

[0029] In some embodiments, at least one poly(alkylene oxide) in the nanostructure composition has Formula (IV): [ka] (In the formula, x is 1 to 100; y is between 0 and 100; R 1A and R 1B are independently H or C 1~20is alkyl; R 2 is C 1~20 is alkyl; X1 is a bond or C 1~12 is alkyl; X2 is a bond, —O—, —OC(═O)— or amide; FG is -OH, -NH2, -NH4 + , -N3, -C(=O)OR 3 , -P(=O)(OR 4 )3 or -P(R 5 )4; R 3 is H, C 1~20 Alkyl or C 6~14 is aryl; R 4 are independently H, C 1~20 Alkyl or C 6~14 is aryl; and R 5 are independently H, C 1~20 Alkyl or C 6~14 (aryl) It has.

[0030] In some embodiments, in the nanostructure composition, in at least one poly(alkylene oxide) having formula (IV), x is 2-20 and y is 1-10.

[0031] In some embodiments, in at least one poly(alkylene oxide) having formula (IV) in the nanostructure composition, R 1A is H, and R 1B is CH3.

[0032] In some embodiments, in at least one poly(alkylene oxide) having formula (IV) in the nanostructure composition, X 1 is a bond and X 2 is a bond.

[0033] In some embodiments, in at least one poly(alkylene oxide) having formula (IV) in the nanostructure composition, FG is —OH, —NH 2 , —N 3 , or —CO 2 H.

[0034] In some embodiments, at least one poly(alkylene oxide) in the nanostructure composition has Formula VI: [ka] (In the formula, x is 1 to 100; y is between 0 and 100; and R 2 is C 1~20 alkyl) It has.

[0035] In some embodiments, in at least one poly(alkylene oxide) having formula (VI) in the nanostructure composition, x is 19, y is 3, and R2 is -CH3.

[0036] In some embodiments, the weight percentage of the poly(alkylene oxide) additive in the nanostructure composition is from about 0.05% to about 2%.

[0037]

[0037] In some embodiments, the nanostructure composition further comprises a surface active compound, a lubricant, a wetting agent, a dispersant, a hydrophobizing agent, an adhesive, a flow improver, a defoamer, a deaerator, a diluent, a stabilizer, an antioxidant, a viscosity modifier, an inhibitor, or a combination thereof.

[0038] The present disclosure also provides a method comprising depositing the nanostructure composition described herein to form a layer on a substrate.

[0039] In some embodiments, the nanostructure composition is deposited by inkjet printing.

[0040] In some embodiments, the method of depositing the nanostructure composition comprises at least partial removal of the organic solvent.

[0041] In some embodiments, the method of depositing the nanostructure composition comprises at least partial removal of the organic solvent by drying under reduced pressure.

[0042] In some embodiments, the method of depositing the nanostructure composition comprises at least partial removal of the organic solvent by applying heat.

[0043] In some embodiments, the substrate is the first conductive layer.

[0044] In some embodiments, the method of depositing a nanostructure composition further comprises depositing a second conductive layer over the nanostructure composition.

[0045]

[0045] In some embodiments, the method of depositing the nanostructure composition further comprises depositing a first transport layer on the first conductive layer, the first transport layer configured to facilitate transport of holes from the first conductive layer to the layer comprising the nanostructure composition; and depositing a second transport layer on the layer comprising the nanostructure composition, the second transport layer configured to facilitate transport of electrons from the second conductive layer to the layer comprising the nanostructure composition.

[0046] In some embodiments, the nanostructure composition is deposited in a pattern.

[0047]

[0047] The present disclosure provides: (a) a first conductive layer; (b) a second conductive layer; (c) a light-emitting layer between the first conductive layer and the second conductive layer; wherein the light-emitting layer comprises at least one population of nanostructures, the nanostructures comprising: (i) at least one organic solvent; (ii) at least one nanostructure comprising a core and at least one shell, the at least one nanostructure comprising an inorganic ligand bound to a surface of the nanostructure; and (iii) at least one poly(alkylene oxide) additive. [Brief explanation of the drawings]

[0048] [Figure 1]

[0048] A flow chart showing the ligand exchange procedure of Example 2. In the first step, t-butylammonium fluoride (TBAF) and zinc difluoride (ZnF2) were mixed in N-methylformamide (NMF) at room temperature to produce the dianionic halozincate TBA2ZnF4. In the second step, the dianionic halozincate TBA2ZnF4 was mixed with oleate-capped quantum dots (QD-OA) in a mixture of toluene and NMF at 70 °C to produce TBA-ZnF4-capped quantum dots. In the third step, the TBA-ZnF4-capped quantum dots were washed with toluene. In the fourth step, the TBA-ZnF4-capped quantum dots were mixed with didecyldimethylammonium chloride (DDA-Cl) to produce DDA-ZnF4-capped quantum dots. In the fifth step, the DDA-ZnF4-capped quantum dots were precipitated with acetonitrile. In the sixth step, the DDA-ZnF4-capped quantum dots were redispersed in toluene in preparation for use in devices. DETAILED DESCRIPTION OF THE INVENTION

[0049] definition

[0049] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by those skilled in the art to which this invention pertains.The following definitions supplement the definitions in the art and are directed to this application, and are not attributable to any related or unrelated, for example, any co-owned patents or applications.Although any methods and materials similar or equivalent to those described herein can be used to carry out the verification of the present invention, preferred materials and methods are described herein.Therefore, the terms used herein are only intended to describe specific embodiments and are not intended to be limiting.

[0050] As used in this specification and the appended claims, the singular forms "a," "an," and "the" include plural referents unless the context clearly dictates otherwise. Thus, for example, reference to a "nanostructure" includes a plurality of such nanostructures, etc.

[0051] As used herein, the term "about" indicates that the value of a particular quantity varies by ±10% of that value. For example, "about 100 nm" includes a range of sizes from 90 nm to 110 nm, inclusive.

[0052] A "nanostructure" is a structure having at least one region or characteristic dimension that is less than about 500 nm. In some embodiments, a nanostructure has a dimension that is less than about 200 nm, less than about 100 nm, less than about 50 nm, less than about 20 nm, or less than about 10 nm. Typically, the region or characteristic dimension is along the shortest axis of the structure. Examples of such structures include nanowires, nanorods, nanotubes, branched nanostructures, nanotetrapods, tripods, bipods, nanocrystals, nanodots, quantum dots, nanoparticles, and the like. A nanostructure can be, for example, substantially crystalline, substantially monocrystalline, polycrystalline, amorphous, or a combination thereof. In some embodiments, each of the three dimensions of a nanostructure has a dimension that is less than about 500 nm, less than about 200 nm, less than about 100 nm, less than about 50 nm, less than about 20 nm, or less than about 10 nm.

[0053] The term "heterostructure," when used in reference to nanostructures, refers to a nanostructure characterized by at least two different and / or distinguishable material types. Typically, one region of the nanostructure comprises a first material type, while a second region of the nanostructure comprises a second material type. In certain embodiments, the nanostructure comprises a core of a first material and at least one shell of a second (or third, etc.) material, with the different material types distributed radially, e.g., relative to the long axis of a nanowire, the long axis of an arm of a branched nanowire, or the center of a nanocrystal. A shell can, but need not, completely cover an adjacent material to be considered a shell or for the nanostructure to be considered a heterostructure; for example, a nanocrystal characterized by one material covered with small islands of a second material is a heterostructure. In other embodiments, the different material types are distributed at different locations within the nanostructure, e.g., along the major (long) axis of a nanowire or the long axis of an arm of a branched nanowire. Different regions within a heterostructure can comprise entirely different materials, or the different regions can comprise a base material (eg, silicon) with different dopants or different concentrations of the same dopant.

[0054] As used herein, the "diameter" of a nanostructure means the diameter of a cross section perpendicular to the first axis of the nanostructure, where the first axis has the greatest difference in length from the second and third axes (the second and third axes being the two axes closest in length to each other). The first axis is not necessarily the longest axis of the nanostructure; for example, in the case of a disk-shaped nanostructure, the cross section would be a substantially circular cross section perpendicular to the short longitudinal axis of the disk. If the cross section is not circular, the diameter is the average of the long and short axes of the cross section. In the case of elongated, i.e., high aspect ratio, nanostructures such as nanowires, the diameter is measured across a cross section perpendicular to the longest axis of the nanowire. In the case of spherical nanostructures, the diameter is measured from one side to the other, passing through the center of the sphere.

[0055] The terms "crystalline" or "substantially crystalline," when used in connection with a nanostructure, refer to the nanostructure typically exhibiting long-range order across one or more dimensions of the structure. Those skilled in the art will understand that the term "long-range order" depends on the absolute size of a particular nanostructure, as the order of a crystal cannot extend beyond the boundaries of the crystal. In this case, "long-range order" refers to substantial order across at least most of the dimensions of the nanostructure. In some cases, the nanostructure may have an oxide or other coating, i.e., may be composed of a core and at least one shell. In such cases, it will be recognized that the oxide, shell, or other coating may, but need not, exhibit such order (e.g., it may be amorphous, polycrystalline, etc.). In such cases, the phrases "crystalline," "substantially crystalline," "substantially monocrystalline," or "monocrystalline" refer to the central core of the nanostructure (excluding coating layers and shells). As used herein, the terms "crystalline" or "substantially crystalline" are intended to encompass structures containing various defects, stacking faults, atomic substitutions, and the like, so long as the structure exhibits substantial long-range order (e.g., order over at least about 80% of the length of at least one axis of the nanostructure or its core). Furthermore, it will be recognized that the interface between the core and the exterior of the nanostructure, or between the core and an adjacent shell, or between a shell and a second adjacent shell, may comprise a non-crystalline region and may even be amorphous. This does not prevent a nanostructure from being crystalline or substantially crystalline as defined herein.

[0056] When used in reference to a nanostructure, the term "monocrystalline" indicates that the nanostructure is substantially crystalline and comprises substantially one crystal. When used in reference to a nanostructure heterostructure comprising a core and one or more shells, the term "monocrystalline" indicates that the core is substantially crystalline and comprises substantially one crystal.

[0057] A "nanocrystal" is a nanostructure that is substantially monocrystalline. Thus, a nanocrystal has at least one region or characteristic dimension that is less than about 500 nm. In some embodiments, a nanocrystal has a dimension less than about 200 nm, less than about 100 nm, less than about 50 nm, less than about 20 nm, or less than about 10 nm. The term "nanocrystal" is intended to include substantially monocrystalline nanostructures that contain various defects, stacking faults, atomic substitutions, etc., as well as substantially monocrystalline nanostructures that are free of such defects, stacking faults, and substitutions. In the case of nanocrystal heterostructures comprising a core and one or more shells, the core of the nanocrystal is typically substantially monocrystalline, although the shells need not be. In some embodiments, each of the three dimensions of the nanocrystal is less than about 500 nm, less than about 200 nm, less than about 100 nm, less than about 50 nm, less than about 20 nm, or less than about 10 nm.

[0058] The term "quantum dot" (or "dot") refers to a nanocrystal that exhibits quantum or exciton confinement. Quantum dots can be substantially homogeneous in material properties or, in some embodiments, heterogeneous, e.g., comprising a core and at least one shell. The optical properties of quantum dots can be affected by their particle size, chemical composition, and / or surface composition, and can be determined by appropriate optical tests available in the art. The ability to tune nanocrystal size, e.g., within a range of about 1 nm to about 15 nm, allows for a photoemission range across the optical spectrum, providing great flexibility in color rendering.

[0059]

[0059] As used herein, the term "monolayer" is a unit of measure of shell thickness derived from the bulk crystal structure of the shell material as the shortest distance between related lattice planes. As an example, for a cubic lattice structure, the thickness of one monolayer is determined as the distance between adjacent lattice planes in the

[0111] direction. As an example, one monolayer of cubic ZnSe corresponds to a thickness of 0.328 nm, and one monolayer of cubic ZnS corresponds to a thickness of 0.31 nm. The thickness of a monolayer of an alloy material can be determined from the composition of the alloy by Vegard's law.

[0060] As used herein, the term "shell" refers to a material deposited on a core or on a previously deposited shell of the same or different composition, resulting from a single deposition of shell material. The exact shell thickness is determined by the amount and conversion rate of the material and precursors used, and can be reported in nanometers or monolayers. As used herein, "target shell thickness" refers to the intended shell thickness used to calculate the amount of precursor required. As used herein, "actual shell thickness" refers to the actual amount of shell material deposited after synthesis, and can be measured by methods well known in the art. For example, the actual shell thickness can be measured by comparing the particle size determined from transmission electron microscope (TEM) images of nanocrystals before and after shell synthesis.

[0061] As used herein, the term "layer" refers to a material deposited on a core or a previously deposited layer, resulting from one deposition act of the core or shell material. The exact thickness of the layer depends on the material. For example, a ZnSe layer can have a thickness of about 0.328 nm, and a ZnS layer can have a thickness of about 0.31 nm.

[0062]

[0062] A "ligand" is a molecule capable of interacting (either weakly or strongly) with one or more surfaces of a nanostructure, for example, through covalent interactions, ionic interactions, van der Waals interactions, or other molecular interactions with the surface of the nanostructure.

[0063] "Photoluminescence quantum yield" is, for example, the ratio of photons emitted to photons absorbed by a nanostructure or population of nanostructures. As known in the art, quantum yield is typically determined by comparative methods using well-characterized standards with known quantum yield values.

[0064]

[0064] "Peak emission wavelength" (PWL) is the wavelength at which the radiative emission spectrum of a light source reaches its maximum.

[0065] As used herein, the term "full width at half maximum" (FWHM) is a measure of the size distribution of quantum dots. The emission spectrum of quantum dots generally has the shape of a Gaussian curve. The width of the Gaussian curve is defined as the FWHM and provides an understanding of the particle size distribution. A smaller FWHM corresponds to a narrower quantum dot nanocrystal size distribution. The FWHM also depends on the emission wavelength maximum.

[0066] As used herein, the term "external quantum efficiency" (EQE) is the ratio of the number of photons emitted from a light-emitting diode to the number of electrons passing through the device. EQE measures how efficiently a light-emitting diode can convert electrons into photons and emit them. EQE is calculated by the formula: EQE = [Injection efficiency] × [Solid state quantum yield] × [Extraction efficiency] can be evaluated using Injection efficiency = fraction of electrons injected through the device into the active region; Solid quantum yield = the ratio of all electron-hole recombinations in the activated region that are radiative and therefore generate photons; Extraction efficiency = the fraction of photons generated in the active region that are emitted from the device.

[0067] As used herein, the term "stable" refers to a mixture or composition that resists change or decomposition due to internal reaction or the action of air, heat, light, pressure, other natural conditions, voltage, current, brightness, or other operating conditions. The colloidal stability of a nanostructure composition can be determined by measuring the peak absorption wavelength after mixing at least one population of nanostructures with at least one solvent. The peak absorption wavelength can be measured by irradiating the nanostructure composition with UV light or blue (450 nm) light and measuring the output using a spectrometer. This absorption spectrum is compared to the absorption from the original nanostructure composition. If the shift in peak absorption wavelength does not exceed 5 nm, the colloidal nanostructure composition is stable.

[0068] As used herein, "alkyl" refers to a straight or branched chain saturated aliphatic group having the specified number of carbon atoms. In some embodiments, alkyl is a C 1~2 Alkyl, C 1~3 Alkyl, C 1~4 Alkyl, C 1~5 Alkyl, C 1~6 Alkyl, C 1~7 Alkyl, C 1~8 Alkyl, C 1~9 Alkyl, C 1~10 Alkyl, C 1~12 Alkyl, C 1~14 Alkyl, C 1~16 Alkyl, C 1~18 Alkyl, C 1~20 Alkyl, C 8~20 Alkyl, C 12~20 Alkyl, C 14~20 Alkyl, C 16~20 Alkyl or C 18~20 It is an alkyl group. For example, C 1~6Alkyl includes, but is not limited to, methyl, ethyl, propyl, isopropyl, butyl, isobutyl, sec-butyl, tert-butyl, pentyl, isopentyl, and hexyl. In some embodiments, alkyl is octyl, nonyl, decyl, undecyl, dodecyl, tridecyl, tetradecyl, pentadecyl, hexadecyl, heptadecyl, octadecyl, nonadecyl, or icosanyl.

[0069]

[0069] As used herein, the term "alkylene," alone or in combination, means a saturated aliphatic group derived from a straight- or branched-chain saturated hydrocarbon bonded at two or more positions, such as methylene (-CH2-). Unless otherwise specified, the term "alkyl" can include an "alkylene" group.

[0070] As used herein, "amido" refers to both "aminocarbonyl" and "carbonylamino." When used alone or in connection with another group, these terms include N(R L R M )-C(O)- or R M C(O)-N(R L )- and -C(O)-N(R when used internally L )- or -N(R M )—C(O)—, where R L and R Mis independently hydrogen, alkyl, alicyclic, (alicyclic)aliphatic, aryl, araliphatic, heteroalicyclic, (heteroalicyclic)aliphatic, heteroaryl, carboxy, sulfanyl, sulfinyl, sulfonyl, (aliphatic)carbonyl, (alicyclic)carbonyl, ((alicyclic)aliphatic)carbonyl, arylcarbonyl, (araliphatic)carbonyl, (heteroalicyclic)carbonyl, ((heteroalicyclic)aliphatic)carbonyl, (heteroaryl)carbonyl, or (heteroaraliphatic)carbonyl, each of which is defined herein and optionally substituted. Exemplary amino groups include alkylamino, dialkylamino, or arylamino. Examples of amido groups include alkylamido (such as alkylcarbonylamino or alkylcarbonylamino), (heteroalicyclic)amido, (heteroaralkyl)amido, (heteroaryl)amido, (heterocycloalkyl)alkylamido, arylamido, aralkylamido, (cycloalkyl)alkylamido, or cycloalkylamido.

[0071] As used herein, "aryl" or "aromatic" refers to an unsubstituted monocyclic or bicyclic aromatic ring system having 6 to 14 carbon atoms, i.e., C 6~14 -aryl. Non-limiting examples of aryl groups include phenyl, naphthyl, phenanthryl, anthracyl, indenyl, azulenyl, biphenyl, biphenylenyl, fluorenyl, terphenyl, pyrenyl, 9,9-dimethyl-2-fluorenyl, anthryl, triphenylenyl, chrysenyl, fluorenylidenephenyl, and 5H-dibenzo[a,d]cycloheptenylidenephenyl. In one embodiment, the aryl group is phenyl, naphthyl, or 9,9-dimethyl-2-fluorenyl.

[0072] As used herein, the terms "halogen" and "halide" mean a fluorine atom, a chlorine atom, a bromine atom, or an iodine atom.

[0073]

[0073] Unless expressly indicated, ranges recited herein are inclusive of both endpoints.

[0074]

[0074] Various additional terms are defined or otherwise characterized herein.

[0075] Inkjet printing

[0075] The formation of thin films using dispersions of nanostructures in organic solvents is often achieved by coating techniques such as spin coating. However, these coating techniques are generally not suitable for forming thin films over large areas and do not provide a means to pattern the deposited layers, thereby limiting their use. Inkjet printing allows for the deposition of precisely patterned thin films on a large scale at low cost. Inkjet printing also allows for the precise patterning of nanostructured layers, making it possible to print display pixels and eliminating the need for photopatterning. Therefore, inkjet printing is very attractive for industrial applications, especially display applications.

[0076] Inkjet printing is a promising technology for the formation of patterned structures of functional materials, such as pixel arrays in quantum dot electroluminescent (QDEL) and quantum dot color conversion (QDCC) displays. Inkjet printing is more cost-effective than other printing techniques, such as photolithography, because it requires fewer process steps and achieves near-complete material utilization. Quantum dots are often marketed as printable because they are soluble in organic solvents. However, inks suitable for inkjet printing must meet several requirements, and the actual printing of quantum dot inks is not a straightforward process.

[0077]

[0077] Inkjet printing of QDEL displays requires: (1) Printer head compatibility against swelling and corrosion; (2) A high boiling point solvent (>240°C) to prevent the ink from drying out and clogging the nozzles; (3) Appropriate ink viscosity (1-12 mPa·s) and surface tension (28-44 dynes / cm) to achieve jetting properties (e.g., droplet formation and nozzle wetting); (4) Maintaining high quantum dot solubility and luminescence properties is necessary.

[0078]

[0078] Therefore, there is a need to improve the compatibility of quantum dots with more polar solvents containing ester or ether groups, which would allow the formulation of inks with appropriate viscosity and surface tension.

[0079] Nanostructured Composition In some embodiments, the present disclosure provides: (a) at least one organic solvent; (b) at least one nanostructure comprising a core and at least one shell, the at least one nanostructure comprising inorganic ligands bound to a surface of the nanostructure; (c) at least one poly(alkylene oxide) additive; A nanostructure composition comprising:

[0080] In some embodiments, the present disclosure provides: (a) at least one organic solvent; (b) at least one nanostructure comprising a core and at least one shell, the at least one nanostructure comprising an inorganic ligand bound to a surface of the nanostructure, the inorganic ligand comprising a halometalate anion and an organic cation; (c) at least one poly(alkylene oxide) additive; A nanostructure composition comprising:

[0081] In some embodiments, the nanostructure composition is a nanostructure ink composition.

[0082] nanostructure In some embodiments, the nanostructure comprises a core and at least one shell. In some embodiments, the nanostructure comprises a core and 1, 2, 3, 4, 5, 6, 7, 8, 9, or 10 shells. In some embodiments, the nanostructure comprises a core and one shell. In some embodiments, the nanostructure comprises a core and two shells. In some embodiments, the nanostructure comprises a core and three shells. In some embodiments, the nanostructure comprises at least two shells, and the two shells are different.

[0083] In some embodiments, the nanostructures comprise organic (first) ligands. In some embodiments, the nanostructures comprise inorganic (second) ligands. In some embodiments, the nanostructures comprise a mixture of organic (first) and inorganic (second) ligands.

[0084] In some embodiments, the nanostructure comprises an InP core and a ZnSe shell. In some embodiments, the nanostructure is InP / ZnS. In some embodiments, the nanostructure is red-emitting InP / ZnS. In some embodiments, the nanostructure is green-emitting InP / ZnS.

[0085] In some embodiments, the nanostructure comprises an InP core, a ZnSe shell, and a ZnS shell. In some embodiments, the nanostructure is InP / ZnSe / ZnS. In some embodiments, the nanostructure is red-emitting InP / ZnSe / ZnS. In some embodiments, the nanostructure is green-emitting InP / ZnSe / ZnS.

[0086] In some embodiments, the nanostructure comprises a ZnSe core and a ZnS shell. In some embodiments, the nanostructure is ZnSe / ZnS. In some embodiments, the nanostructure is blue-emitting ZnSe / ZnS.

[0087] In some embodiments, the nanostructure comprises a ZnSeTe core, a ZnSe shell, and a ZnS shell. In some embodiments, the nanostructure is ZnSeTe / ZnSe / ZnS. In some embodiments, the nanostructure is blue-emitting ZnSeTe / ZnSe / ZnS.

[0088] The number of monolayers determines the size of the core / shell nanostructure. The size of the core / shell nanostructure can be determined using techniques well known to those skilled in the art. In some embodiments, the size of the core / shell nanostructure is determined using TEM. In some embodiments, the core / shell nanostructure has a size of about 1 nm to about 15 nm, about 1 nm to about 10 nm, about 1 nm to about 9 nm, about 1 nm to about 8 nm, about 1 nm to about 7 nm, about 1 nm to about 6 nm, about 1 nm to about 5 nm, about 5 nm to about 15 nm, about 5 nm to about 10 nm, about 5 nm to about 9 nm, about 5 nm to about 8 nm, about 5 nm to about 7 nm, about 5 nm to about 6 nm, about 6 nm to about In some embodiments, the core / shell nanostructure has an average diameter of about 15 nm, about 6 nm to about 10 nm, about 6 nm to about 9 nm, about 6 nm to about 8 nm, about 6 nm to about 7 nm, about 7 nm to about 15 nm, about 7 nm to about 10 nm, about 7 nm to about 9 nm, about 7 nm to about 8 nm, about 8 nm to about 15 nm, about 8 nm to about 10 nm, about 8 nm to about 9 nm, about 9 nm to about 15 nm, about 9 nm to about 10 nm, or about 10 nm to about 15 nm. In some embodiments, the core / shell nanostructure has an average diameter of about 6 nm to about 7 nm.

[0089] In some embodiments, the weight percentage of the nanostructures in the nanostructure composition is from about 0.5% to about 10%. In some embodiments, the weight percentage of the nanostructures in the nanostructure composition is about 0.5% to about 10%, about 0.5% to about 5%, about 0.5% to about 3%, about 0.5% to about 2%, about 0.5% to about 1.5%, about 0.5% to about 1%, about 1% to about 10%, about 1% to about 5%, about 1% to about 3%, about 1% to about 2%, about 1% to about 1.5%, about 1.5% to about 10%, about 1.5% to about 5%, about 1.5% to about 3%, about 1.5% to about 2%, about 2% to about 10%, about 2% to about 5%, about 2% to about 3%, about 3% to about 10%, about 3% to about 5%, or about 5% to about 10%. In some embodiments, the weight percentage of the nanostructures in the nanostructure composition is about 1.5% to about 3%.

[0090] Nanostructured Core In some embodiments, the core comprises Si, Ge, Sn, Se, Te, B, C, P, BN, BP, BAs, AlN, AlP, AlAs, AlSb, GaN, GaP, GaAs, GaSb, InN, InP, InAs, InSb, ZnO, ZnS, ZnSe, ZnTe, CdS, CdSe, CdSeZn, CdTe, HgS, HgSe, HgTe, BeS, BeSe, BeTe, MgS, MgSe, GeS, GeSe, GeTe, SnS, SnSe, SnTe, PbO, PbS, PbSe, PbTe, CuF, CuCl, CuBr, CuI, Si3N4, Ge3N4, Al2O3, Al2OC or a combination thereof.

[0091] In some embodiments, the core is a III-V nanostructure. In some embodiments, the core is a III-V nanocrystal selected from the group consisting of BN, BP, BAs, BSb, AlN, AlP, AlAs, AlSb, GaN, GaP, GaAs, GaSb, InN, InP, InAs, and InSb. In some embodiments, the core is an InP nanocrystal.

[0092]

[0092] The synthesis of III-V nanostructures is described in U.S. Patent No. 5,505,928, U.S. Patent No. 6,306,736, U.S. Patent No. 6,576,291, U.S. Patent No. 6,788,453, U.S. Patent No. 6,821,337, U.S. Patent No. 7,138,098, U.S. Patent No. 7,557,028, U.S. Patent No. 8,062,967, U.S. Patent No. 7,645,397 and U.S. Patent No. 8,282,412 and U.S. Patent Application Publication No. 2015 / 236195. The synthesis of III-V nanostructures is also described in Wells, R.L., et al., "The use of tris(trimethylsilyl)arsine to prepare gallium arsenide and indium arsenide," Chem. Mater. 1: 4-6 (1989) and Guzelian, A.A., et al., "Colloidal chemical synthesis and characterization of InAs nanocrystal quantum dots," Appl. Phys. Lett. 69: 1432-1434 (1996).

[0093]

[0093] The synthesis of InP-based nanostructures is described, for example, in Xie, R., et al., “Colloidal InP nanocrystals as efficient emitters covering blue to near-infrared,” J. Am. Chem. Soc. 129: 15432-15433 (2007); Micic, O. I., et al., “Core-shell quantum dots of lattice-matched ZnCdSe2 shells on InP cores: Experiment and theory,” J. Phys. Chem. B 104: 12149-12156 (2000); Liu, Z., et al., “Coreduction colloidal synthesis of III-V nanocrystals: The case of InP,” Angew. Chem. Int. Ed. Engl. 47: 3540-3542 (2008); Li, L. et al., “Economic synthesis of high quality InP nanocrystals using calcium phosphide as the phosphorus precursor,” Chem. Mater. 20: 2621-2623 (2008); D. Battaglia and X. Peng, “Formation of high quality InP and InAs nanocrystals in a noncoordinating solvent,” Nano Letters 2: 1027-1030 (2002); Kim, S., et al., “Highly luminescent InP / GaP / ZnS nanocrystals and their application to white light-emitting diodes,” J. Am. Chem. Soc. 134: 3804-3809 (2012); Nann, T., et al.,“Water splitting by visible light: A nanophotocathode for hydrogen production,”Angew. Chem. Int. Ed. 49: 1574-1577 (2010);Borchert, H., et al.,“Investigation of ZnS passivated InP nanocrystals by XPS,”Nano Letters 2: 151-154 (2002);L. Li and P. Reiss,“One-pot synthesis of highly luminescent InP / ZnS nanocrystals without precursor injection,”J. Am. Chem. Soc. 130: 11588-11589 (2008);Hussain, S., et al.“One-pot fabrication of high-quality InP / ZnS (core / shell) quantum dots and their application to cellular imaging,”Chemphyschem. 10: 1466-1470 (2009);Xu, S., et al.,“Rapid synthesis of high-quality InP nanocrystals,”J. Am. Chem. Soc. 128: 1054-1055 (2006);Micic, O. I., et al.,“Size-dependent spectroscopy of InP quantum dots,”J. Phys. Chem. B 101: 4904-4912 (1997);Haubold, S., et al.,“Strongly luminescent InP / ZnS core-shell nanoparticles,”Chemphyschem. 5: 331-334 (2001);CrosGagneux, A., et al.,“Surface chemistry of InP quantum dots: A comprehensive study,”J. Am. Chem. Soc.132: 18147-18157 (2010);Micic, OI, et al.,“Synthesis and characterization of InP, GaP, and GaInP2quantum dots,”J. Phys. Chem. 99: 7754-7759 (1995);Guzelian, AA, et al.,“Synthesis of size-selected, surface-passivated InP nanocrystals,”J. Phys. Chem. 100: 7212-7219 (1996);Lucey, DW, et al.,“Monodispersed InP quantum dots prepared by colloidal chemistry in a non-coordinating solvent,”Chem. Mater. 17: 3754-3762 (2005);Lim, J., et al.,“InP@ZnSeS, core@composition gradient shell quantum dots with enhanced stability,” Chem. Mater. 23: 4459-4463 (2011); and Zan, F., et al., “Experimental studies on blinking behavior of single InP / ZnS quantum dots: Effects of synthetic conditions and UV irradiation,” J. Phys. Chem. C 116: 394-3950 (2012). However, such efforts have had only limited success in producing high quantum yield InP nanostructures.

[0094] In some embodiments, the core is doped. In some embodiments, the dopant of the nanocrystalline core comprises a metal, such as one or more transition metals. In some embodiments, the dopant is a transition metal selected from the group consisting of Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Mn, Tc, Re, Fe, Ru, Os, Co, Rh, Ir, Ni, Pd, Pt, Cu, Ag, Au, and combinations thereof. In some embodiments, the dopant comprises a non-metal. In some embodiments, the dopant is ZnS, ZnSe, ZnTe, CdSe, CdS, CdTe, HgS, HgSe, HgTe, CuInS2, CuInSe2, AlN, AlP, AlAs, GaN, GaP, or GaAs.

[0095] In some embodiments, the core is a II-VI nanocrystal selected from the group consisting of ZnO, ZnSe, ZnS, ZnTe, CdO, CdSe, CdS, CdTe, HgO, HgSe, HgS, and HgTe. In some embodiments, the core is a nanocrystal selected from the group consisting of ZnSe, ZnS, CdSe, and CdS. The synthesis of II-VI nanostructures is described in U.S. Patent No. 6,225,198, U.S. Patent No. 6,322,901, U.S. Patent No. 6,207,229, U.S. Patent No. 6,607,829, U.S. Patent No. 7,060,243, U.S. Patent No. 7,374,824, U.S. Patent No. 6,861,155, U.S. Patent No. 7,125,605, U.S. Patent No. 7,566,476, U.S. Patent No. 8,158,193, and U.S. Patent No. 8,101,234, and U.S. Patent Application Publication Nos. 2011 / 0262752 and 2011 / 0263062.

[0096]

[0096] In some embodiments, the cores are purified before depositing the shell, hi some embodiments, the cores are filtered to remove precipitates from the core solution.

[0097] In some embodiments, the core is subjected to an acid etching step before the shell is deposited.

[0098] In some embodiments, the core diameter is determined using quantum confinement. Quantum confinement in zero-dimensional nanocrystallites, such as quantum dots, arises from the spatial confinement of electrons within the crystallite boundaries. Quantum confinement can be confirmed when the diameter of a material is as large as the de Broglie wavelength of the wave function. The electronic and optical properties of nanostructures deviate significantly from those of bulk materials. When the confinement dimension is larger than the wavelength of the nanostructure, the particle behaves as if it were free. In this state, the band gap remains at its original energy due to the continuous energy states. However, as the confinement dimension decreases, typically reaching a certain limit on the nanoscale, the energy spectrum becomes discrete. As a result, the band gap becomes size-dependent. Size can be determined using, for example, transmission electron microscopy and / or physical modeling, as is well known in the art.

[0099] In some embodiments, the diameter of the core nanostructure is from about 1 nm to about 9 nm, from about 1 nm to about 8 nm, from about 1 nm to about 7 nm, from about 1 nm to about 6 nm, from about 1 nm to about 5 nm, from about 1 nm to about 4 nm, from about 1 nm to about 3 nm, from about 1 nm to about 2 nm, from about 2 nm to about 9 nm, from about 2 nm to about 8 nm, from about 2 nm to about 7 nm, from about 2 nm to about 6 nm, from about 2 nm to about 5 nm, from about 2 nm to about 4 nm, from about 2 nm to about 3 nm, from about 3 nm to about 9 nm, from about 3 nm to about 8 nm, 3 nm to about 7 nm, about 3 nm to about 6 nm, about 3 nm to about 5 nm, about 3 nm to about 4 nm, about 4 nm to about 9 nm, about 4 nm to about 8 nm, about 4 nm to about 7 nm, about 4 nm to about 6 nm, about 4 nm to about 5 nm, about 5 nm to about 9 nm, about 5 nm to about 8 nm, about 5 nm to about 7 nm, about 5 nm to about 6 nm, about 6 nm to about 9 nm, about 6 nm to about 8 nm, about 6 nm to about 7 nm, about 7 nm to about 9 nm, about 7 nm to about 8 nm, or about 8 nm to about 9 nm. In some embodiments, the diameter of the core nanostructure is about 7 nm.

[0100] Nanostructured Shell Layer In some embodiments, the nanostructures of the present disclosure comprise a core and at least one shell. In some embodiments, the nanostructures comprise a core and at least two shells. In some embodiments, the nanostructures comprise a core and two shells.

[0101] The shell can, for example, increase the quantum yield and / or stability of the nanostructure. In some embodiments, the core and shell comprise different materials. In some embodiments, the nanostructure comprises multiple shells of different materials.

[0102] In some embodiments, a shell comprising a mixture of Group II and Group VI elements is deposited on the core or core / shell structure. In some embodiments, the shell is deposited using at least two mixtures of a zinc source, a selenium source, a sulfur source, a tellurium source, and a cadmium source. In some embodiments, the shell is deposited using two mixtures of a zinc source, a selenium source, a sulfur source, a tellurium source, and a cadmium source. In some embodiments, the shell is deposited using three mixtures of a zinc source, a selenium source, a sulfur source, a tellurium source, and a cadmium source. In some embodiments, the shell is composed of zinc and sulfur; zinc and selenium; zinc, sulfur and selenium; zinc and tellurium; zinc, tellurium and sulfur; zinc, tellurium and selenium; zinc, cadmium and sulfur; zinc, cadmium and selenium; cadmium and sulfur; cadmium and selenium; cadmium, selenium and sulfur; cadmium, zinc and sulfur; cadmium, zinc and selenium; or cadmium, zinc, sulfur and selenium.

[0103] In some embodiments, at least one shell comprises CdS, CdSe, CdO, CdTe, ZnS, ZnO, ZnSe, ZnTe, MgTe, GaAs, GaSb, GaN, HgO, HgS, HgSe, HgTe, InAs, InSb, InN, AlAs, AlN, AlSb, AlS, PbS, PbO, PbSe, PbTe, MgO, MgS, MgSe, MgTe, CuCl, Ge, Si, or alloys thereof. In some embodiments, at least one shell comprises ZnSe. In some embodiments, at least one shell comprises ZnS. In some embodiments, at least one shell comprises a first shell comprising ZnSe and a second shell comprising ZnS.

[0104] In some embodiments, the shell comprises more than one monolayer of shell material. The number of monolayers is an average across all nanostructures, so the number of monolayers in a shell may be a fraction. In some embodiments, the number of monolayers in a shell is 0.25-10, 0.25-8, 0.25-7, 0.25-6, 0.25-5, 0.25-4, 0.25-3, 0.25-2, 2-10, 2-8, 2-7, 2-6, 2-5, 2-4, 2-3, 3-10, 3-8, 3-7, 3-6, 3-5, 3-4, 4-10, 4-8, 4-7, 4-6, 4-5, 5-10, 5-8, 5-7, 5-6, 6-10, 6-8, 6-7, 7-10, 7-8, or 8-10. In some embodiments, the shell comprises 3 to 5 monolayers.

[0105] The thickness of each shell can be determined using techniques known to those skilled in the art. In some embodiments, the thickness of each shell is determined by comparing the average diameter of the nanostructures before and after adding each shell. In some embodiments, the average diameter of the nanostructures before and after adding each shell is determined by TEM.

[0106]

[0106] In some embodiments, each shell has a thickness of about 0.05 nm to about 3.5 nm, about 0.05 nm to about 2 nm, about 0.05 nm to about 0.9 nm, about 0.05 nm to about 0.7 nm, about 0.05 nm to about 0.5 nm, about 0.05 nm to about 0.3 nm, about 0.05 nm to about 0.1 nm, about 0.1 nm to about 3.5 nm, about 0.1 nm to about 2 nm, about 0.1 nm to about 0.9 nm, about 0.1 nm to about 0.7 nm, about 0.1 nm to about 0.5 nm, about 0.1 nm to about 0.3 nm, or about 0. The thickness is 3 nm to about 3.5 nm, about 0.3 nm to about 2 nm, about 0.3 nm to about 0.9 nm, about 0.3 nm to about 0.7 nm, about 0.3 nm to about 0.5 nm, about 0.5 nm to about 3.5 nm, about 0.5 nm to about 2 nm, about 0.5 nm to about 0.9 nm, about 0.5 nm to about 0.7 nm, about 0.7 nm to about 3.5 nm, about 0.7 nm to about 2 nm, about 0.7 nm to about 0.9 nm, about 0.9 nm to about 3.5 nm, about 0.9 nm to about 2 nm, or about 2 nm to about 3.5 nm.

[0107] Ligand exchange

[0107] U.S. Patent Application Publication No. 2018 / 0230321 discloses inks of CdZnS / ZnS quantum dots (blue), CdZnSeS / ZnS quantum dots (green), and CdSe / CdS / ZnS quantum dots (red) containing oleate and trioctylphosphine ligands dispersed in substituted aromatic or heteroaromatic solvents such as 1-methoxynaphthalene, cyclohexylbenzene, 3-isopropylbiphenyl, benzyl benzoate, 1-tetralone, or 3-phenoxytoluene. However, red InP / ZnSe / ZnS quantum dots containing organic ligands were found to be incompletely soluble in most of these solvents. Table 1 shows the solubility test results for two different types of red InP / ZnSe / ZnS quantum dots: those containing organic ligands and those containing inorganic ligands.

[0108] [Table 1]

[0109] Quantum dots typically contain native organic ligands, such as oleate, octanethiol, and trioctylphosphine, introduced during shell synthesis. We found that these native ligands could be exchanged for inorganic ligands through a ligand exchange process. In spin-coated devices, both types of quantum dots were processed from octane, a low-boiling alkane solvent. Quantum dots containing inorganic ligands (after ligand exchange) exhibited longer operational lifetimes in devices containing emissive layers and are therefore more desirable for the production of inks for use in forming emissive layers. While a well-dispersed colloidal solution is transparent, an opaque mixture indicates aggregation of the quantum dots. Inks for use in forming emissive layers require sufficient dispersion of the quantum dots to prevent clogging of inkjet nozzles and enable the formation of smooth films. The solubility test results, shown in Table 1, indicate that only alkane (e.g., hexadecane) or alkylbenzene (e.g., octylbenzene) solvents were able to disperse both quantum dots containing native organic ligands and those containing inorganic ligands (after ligand exchange). Printing tests using a Fujifilm Dimatrix DMP-2831 printer showed that quantum dot inks prepared using only octylbenzene as a solvent were not suitable for wetting the nozzle plate due to their relatively low surface tension and viscosity.

[0110]

[0109] The present disclosure is directed to methods of exchanging a first ligand on a nanostructure with a second ligand. In some embodiments, the second ligand is an inorganic ligand. In some embodiments, the nanostructure is a quantum dot.

[0111] In some embodiments, the present disclosure provides a method of exchanging a first ligand on a nanostructure with a second ligand, the method comprising: mixing a reaction mixture comprising the population of nanostructures having the first ligand bound to the nanostructures with at least one second ligand, such that the second ligand displaces the first ligand and binds to the nanostructures; The present invention covers a method including:

[0112]

[0111] In some embodiments, the nanostructures are quantum dots.

[0113] In some embodiments, the mixing is carried out at a temperature of about 0°C to about 200°C, about 0°C to about 150°C, about 0°C to about 100°C, about 0°C to about 80°C, about 20°C to about 200°C, about 20°C to about 150°C, about 20°C to about 100°C, about 20°C to about 80°C, about 50°C to about 200°C, about 50°C to about 150°C, about 50°C to about 100°C, about 50°C to about 80°C, about 80°C to about 200°C, about 80°C to about 150°C, about 80°C to about 100°C, about 100°C to about 200°C, about 100°C to about 150°C, or about 150°C to about 200°C. In some embodiments, the mixing is carried out at a temperature of about 20°C to about 100°C. In some embodiments, the mixing is carried out at a temperature of about 22°C. In some embodiments, the mixing is carried out at a temperature of about 70°C.

[0114] In some embodiments, the mixing is carried out for about 1 minute to about 6 hours, about 1 minute to about 2 hours, about 1 minute to about 1 hour, about 1 minute to about 40 minutes, about 1 minute to about 30 minutes, about 1 minute to about 20 minutes, about 1 minute to about 10 minutes, about 10 minutes to about 6 hours, about 10 minutes to about 2 hours, about 10 minutes to about 1 hour, about 10 minutes to about 40 minutes, about 10 minutes to about 30 minutes, about 10 minutes to about 20 minutes, about 20 minutes to about 6 hours, about 2 The reaction is carried out over a period of 0 minutes to about 2 hours, about 20 minutes to about 1 hour, about 20 minutes to about 40 minutes, about 20 minutes to about 30 minutes, about 30 minutes to about 6 hours, about 30 minutes to about 2 hours, about 30 minutes to about 1 hour, about 30 minutes to about 40 minutes, about 40 minutes to about 6 hours, about 40 minutes to about 2 hours, about 40 minutes to about 1 hour, about 1 hour to about 6 hours, about 1 hour to about 2 hours, or about 2 hours to about 6 hours.

[0115] In some embodiments, the reaction mixture further comprises a solvent. In some embodiments, the solvent is selected from the group consisting of chloroform, acetone, butanone, tetrahydrofuran, 2-methyltetrahydrofuran, ethylene glycol monoethyl ether, ethylene glycol monopropyl ether, ethylene glycol monobutyl ether, diethylene glycol diethyl ether, methyl isobutyl ketone, monomethyl ether glycol ester, gamma-butyrolactone, methyl acetate-3-ethyl ether, butyl carbitol, butyl carbitol acetate, propanediol monomethyl ether, propanediol monomethyl ether acetate, cyclohexane, toluene, xylene, isopropyl alcohol, N-methylformamide, and combinations thereof. In some embodiments, the solvent is toluene. In some embodiments, the solvent is N-methylformamide. In some embodiments, the solvent is a mixture of toluene and N-methylformamide.

[0116] The percentage of second ligands bound to nanostructures in a population of nanostructures is 1 It can be measured by 1 H NMR, where bound ligand is calculated using (bound secondary ligand) / (bound+free secondary ligand).

[0117]

[0116] In some embodiments, the molar percentage of the second ligand bound to the nanostructure is between about 20% and about 100%, between about 20% and about 80%, between about 20% and about 60%, between about 20% and about 40%, between about 25% and about 100%, between about 25% and about 80%, between about 25% and about 60%, between about 25% and about 40%, between about 30% and about 100%, between about 30% and about 80%, between about 30% and about 60%, between about 30% and about 40%, between about 40% and about 100%, between about 40% and about 80%, between about 40% and about 60%, between about 60% and about 100%, between about 60% and about 80%, or between about 80% and about 100%.

[0118] First Ligand In some embodiments, each shell is synthesized in the presence of at least one nanostructure ligand. The ligand can, for example, improve the miscibility of the nanostructures in the solvent or polymer (allowing the nanostructures to disperse throughout the composition so they do not clump together), increase the quantum yield, and / or maintain the luminescence of the nanostructures (e.g., when the nanostructures are incorporated into a matrix). In some embodiments, the ligands used for core synthesis and shell synthesis are the same. In some embodiments, the ligands used for core synthesis and shell synthesis are different. After synthesis, any ligands on the surface of the nanostructure can be exchanged for different ligands with other desirable properties. Exemplary ligands are disclosed in U.S. Pat. Nos. 7,572,395, 8,143,703, 8,425,803, 8,563,133, 8,916,064, 9,005,480, 9,139,770, and 9,169,435, and U.S. Patent Application Publication No. 2008 / 0118755.

[0119] In some embodiments, the first ligand is a fatty acid selected from the group consisting of lauric acid, caproic acid, myristic acid, palmitic acid, stearic acid, and oleic acid. In some embodiments, the first ligand is an organophosphine or organophosphine oxide selected from trioctylphosphine oxide, trioctylphosphine, diphenylphosphine, triphenylphosphine oxide, and tributylphosphine oxide. In some embodiments, the first ligand is an amine selected from the group consisting of dodecylamine, oleylamine, hexadecylamine, dioctylamine, and octadecylamine. In some embodiments, the first ligand is trioctylphosphine, trioctylphosphine oxide, trihydroxypropylphosphine, tributylphosphine, tridodecylphosphine, dibutyl phosphite, tributyl phosphite, octadecyl phosphite, trilauryl phosphite, didodecyl phosphite, triisodocyl phosphite, bis(2-ethylhexyl) phosphate, tridecyl phosphate, hexadecylamine, oleylamine, octadecylamine, dioctadecylamine, octacosamine, bis(2-ethylhexyl)amine, octylamine, dioctylamine, trioctylamine, dodecylamine, didodecylamine, hexadecylamine, phenylphosphate, hexylphosphate, tetradecylphosphonic acid, octylphosphate, n-octadecylphosphonic acid, propenyldiphosphonic acid, dioctyl ether, diphenyl ether, octyl mercaptan, dodecyl mercaptan, oleate, or octanethiol. In some embodiments, the first ligand is oleate, trioctylphosphine, or octanethiol.

[0120] Second Ligand In some embodiments, the second ligand is an inorganic ligand. In some embodiments, the second ligand comprises an inorganic anion and an organic cation.

[0121] In some embodiments, the second ligand comprises an inorganic anion. In some embodiments, the inorganic anion comprises a metal. In some embodiments, the inorganic anion comprises a halometalate anion. In some embodiments, the halometalate anion is a bromometalate anion, a chlorometalate anion, a fluorometalate anion, or an iodometalate anion.

[0122] In some embodiments, the halometalate anion has the formula (I)MX3 - , formula (II)MX 4-x Y x - or formula (III)MX 4-x Y x 2- (In the formula, M is selected from the group consisting of Zn, Cd, Hg, Cu, Ag, and Au; X is selected from the group consisting of Br, Cl, F, and I; Y is selected from the group consisting of Br, Cl, F, and I; and x is 0, 1 or 2) is represented by one of the following:

[0123] In some embodiments, the halometalate anion is a halozincate anion. In some embodiments, the halozincate anion is ZnBr3 - Anion, ZnCl3 - Anion, ZnF3 - Anion, ZnI3 - Anion, ZnBr4 2- Anion, ZnCl4 2- Anion, ZnF4 2- Anion, ZnI4 2- Anion or ZnCl2F2 2- It is an anion.

[0124] In some embodiments, the second ligand comprises an organic cation, hi some embodiments, the organic cation is selected from the group consisting of a tetraalkylammonium cation, an alkylphosphonium cation, a formamidinium cation, a guanidinium cation, an imidazolium cation, and a pyridinium cation.

[0125] In some embodiments, the organic cation is a tetraalkylammonium cation selected from the group consisting of dioctadecyldimethylammonium, dihexadecyldimethylammonium, ditetradecyldimethylammonium, didodecyldimethylammonium, didecyldimethylammonium, dioctyldimethylammonium, bis(ethylhexyl)dimethylammonium, octadecyltrimethylammonium, oleyltrimethylammonium, hexadecyltrimethylammonium, tetradecyltrimethylammonium, dodecyltrimethylammonium, decyltrimethylammonium, octyltrimethylammonium, phenylethyltrimethylammonium, benzyltrimethylammonium, phenyltrimethylammonium, benzylhexadecyldimethylammonium, benzyltetradecyldimethylammonium, benzyldodecyldimethylammonium, benzyldecyldimethylammonium, benzyloctyldimethylammonium, benzyltributylammonium, benzyltriethylammonium, tetrabutylammonium, tetrapropylammonium, diisopropyldimethylammonium, tetraethylammonium, and tetramethylammonium. In some embodiments, the organic cation is didecyldimethylammonium. In some embodiments, the organic cation is tetrabutylammonium.

[0126] In some embodiments, the organic cation is an alkylphosphonium cation and is selected from the group consisting of tetraphenylphosphonium, dimethyldiphenylphosphonium, methyltriphenoxyphosphonium, hexadecyltributylphosphonium, octyltributylphosphonium, tetradecyltrihexylphosphonium, tetrakis(hydroxymethyl)phosphonium, tetraoctylphosphonium, tetrabutylphosphonium, and tetramethylphosphonium.

[0127] In some embodiments, the organic cation is a guanidinium cation. In some embodiments, the guanidinium cation is N,N,N',N',N'',N''-hexaalkylguanidinium.

[0128] In some embodiments, the organic cation is an imidazolium cation. In some embodiments, the imidazolium cation is a 1,3-dialkylimidazolium or a 1,2,3-trialkylimidazolium.

[0129] In some embodiments, the organic cation is a pyridinium cation. In some embodiments, the pyridinium cation is an N-alkylpyridinium.

[0130]

[0129] In some embodiments, the inorganic ligand is tetrabutylammonium tetrafluorozincate or tetrabutylammonium dichlorodifluorozincate.

[0131] organic solvents

[0130] Suitable solvents for inkjet printing of electroluminescent quantum dot light-emitting diodes are known to those skilled in the art. In some embodiments, the organic solvent is a substituted aromatic or heteroaromatic solvent as described in U.S. Patent Application Publication No. 2018 / 0230321, which is incorporated herein by reference in its entirety.

[0132] In some embodiments, the organic solvent used in the nanostructure composition used as an inkjet printing formulation is defined by its boiling point, viscosity, and surface tension. The properties of organic solvents suitable for inkjet printing formulations are shown in Table 2.

[0133] [Table 2]

[0134] In some embodiments, the organic solvent has a boiling point at 1 atmosphere of about 150° C. to about 350° C. In some embodiments, the organic solvent has a boiling point at 1 atmosphere of about 150° C. to about 350° C., about 150° C. to about 300° C., about 150° C. to about 250° C., about 150° C. to about 200° C., about 200° C. to about 350° C., about 200° C. to about 300° C., about 200° C. to about 250° C., about 250° C. to about 350° C., about 250° C. to about 300° C., or about 300° C. to about 350° C.

[0135] In some embodiments, the organic solvent has a viscosity of about 1 mPa·s to about 15 mPa·s. In some embodiments, the organic solvent has a viscosity of about 1 mPa·s to about 15 mPa·s, about 1 mPa·s to about 10 mPa·s, about 1 mPa·s to about 8 mPa·s, about 1 mPa·s to about 6 mPa·s, about 1 mPa·s to about 4 mPa·s, about 1 mPa·s to about 2 mPa·s, about 2 mPa·s to about 15 mPa·s, about 2 mPa·s to about 10 mPa·s, about 2 mPa·s to about 8 mPa·s, about 2 mPa·s to about 6 mPa·s, or about 2 mPa·s. The viscosity of the polymerizable composition is about 4 mPa·s to about 4 mPa·s, about 4 mPa·s to about 15 mPa·s, about 4 mPa·s to about 10 mPa·s, about 4 mPa·s to about 8 mPa·s, about 4 mPa·s to about 6 mPa·s, about 6 mPa·s to about 15 mPa·s, about 6 mPa·s to about 10 mPa·s, about 6 mPa·s to about 8 mPa·s, about 8 mPa·s to about 15 mPa·s, about 8 mPa·s to about 10 mPa·s, or about 10 mPa·s to about 15 mPa·s.

[0136] In some embodiments, the organic solvent has a surface tension of about 20 dynes / cm to about 50 dynes / cm. In some embodiments, the organic solvent has a surface tension of about 20 dynes / cm to about 50 dynes / cm, about 20 dynes / cm to about 40 dynes / cm, about 20 dynes / cm to about 35 dynes / cm, about 20 dynes / cm to about 30 dynes / cm, about 20 dynes / cm to about 25 dynes / cm, about 25 dynes / cm to about 50 dynes / cm, about 25 dynes / cm to about 40 dynes / cm, or about 25 dynes / cm. / cm to about 35 dynes / cm, about 25 dynes / cm to about 30 dynes / cm, about 30 dynes / cm to about 50 dynes / cm, about 30 dynes / cm to about 40 dynes / cm, about 30 dynes / cm to about 35 dynes / cm, about 35 dynes / cm to about 50 dynes / cm, about 35 dynes / cm to about 40 dynes / cm, or about 40 dynes / cm to about 50 dynes / cm.

[0137] In some embodiments, the organic solvent used in the nanostructure composition is selected from the group consisting of alkyl naphthalenes, alkoxy naphthalenes, alkyl benzenes, aryl, alkyl substituted benzenes, cycloalkyl benzenes, C9-C 20 It may be an alkane, a diaryl ether, an alkyl benzoate, an aryl benzoate, or an alkoxy-substituted benzene.

[0138] In some embodiments, the organic solvent used in the nanostructure composition is 1-tetralone, 3-phenoxytoluene, acetophenone, 1-methoxynaphthalene, n-octylbenzene, n-nonylbenzene, 4-methylanisole, n-decylbenzene, p-diisopropylbenzene, pentylbenzene, tetralin, cyclohexylbenzene, chloronaphthalene, 1,4-dimethylnaphthalene, 3-isopropylbiphenyl, p-methylcumene, dipentylbenzene, o-diethylbenzene, m- Diethylbenzene, p-diethylbenzene, 1,2,3,4-tetramethylbenzene, 1,2,3,5-tetramethylbenzene, 1,2,4,5-tetramethylbenzene, butylbenzene, dodecylbenzene, 1-methylnaphthalene, 1,2,4-trichlorobenzene, diphenyl ether, diphenylmethane, 4-isopropylbiphenyl, benzyl benzoate, 1,2-bi(3,4-dimethylphenyl)ethane, 2-isopropylnaphthalene, dibenzyl ether, or a combination thereof. In some embodiments, the organic solvent used in the nanostructure composition is 1-methylnaphthalene, n-octylbenzene, 1-methoxynapthalene, 3-phenoxytoluene, cyclohexylbenzene, 4-methylanisole, n-decylbenzene, or a combination thereof.

[0139] In some embodiments, the organic solvent is an anhydrous organic solvent. In some embodiments, the organic solvent is a substantially anhydrous organic solvent.

[0140] In some embodiments, the weight percentage of organic solvent in the nanostructure composition is about 70% to about 99%. In some embodiments, the weight percentage of organic solvent in the nanostructure composition is about 70% to about 99%, about 70% to about 98%, about 70% to about 95%, about 70% to about 90%, about 70% to about 85%, about 70% to about 80%, about 70% to about 75%, about 75% to about 99%, about 75% to about 98%, about 75% to about 95%, about 75% to about 90%, about 75% to about 85%, about 75% In some embodiments, the weight percentage of organic solvent in the nanostructure composition is about 95% to about 99%.

[0141] Poly(alkene oxide) additives In some embodiments, the poly(alkylene oxide) additive comprises a poly(alkylene oxide) backbone. In some embodiments, the poly(alkylene oxide) additive comprises at least one functional group attached to the poly(alkylene oxide) backbone. In some embodiments, the at least one functional group can be attached to the II-VI nanocrystal surface as a neutral L-type binding ligand (e.g., R-COOH), or the like. In some embodiments, the at least one functional group can be attached to the II-VI nanocrystal surface as an electron-donating X-type ligand (e.g., R-COOH). - ) can be attached to the II-VI nanocrystal surface.

[0142] In some embodiments, the poly(alkylene oxide) additive has at least one functional group. In some embodiments, the at least one functional group is —OH, —NH, —NH + , -N3, -C(=O)OR 3 , -P(=O)(OR 4 )3 or -P(R 5 )4.

[0143] In some embodiments, the poly(alkylene oxide) additive is a mixture of functionally terminated poly(alkylene oxide), copolymers of alkylene oxide, and combinations thereof. In some embodiments, the functionally terminated poly(alkylene oxide) comprises a copolymer of alkylene oxide. In some embodiments, the copolymer is a random copolymer or a block copolymer. In some embodiments, the block copolymer is a diblock copolymer or a triblock copolymer. In some embodiments, the copolymer is based on propylene oxide (PO), ethylene oxide (EO), or a mixture of PO and EO. In some embodiments, the copolymer is a mixture of PO and EO.

[0144]

[0142] In some embodiments, the poly(alkylene oxide) additive comprises a random copolymer of ethylene oxide and propylene oxide, a poly(ethylene oxide)-poly(propylene oxide) diblock copolymer, a poly(ethylene oxide)-poly(propylene oxide)-poly(ethylene oxide) triblock copolymer, a poly(propylene oxide)-poly(ethylene oxide)-poly(propylene oxide) triblock copolymer, or a combination thereof.

[0145] In some embodiments, the poly(alkylene oxide) additive comprises a copolymer of PO and EO. In some embodiments, the ratio of ethylene oxide groups to propylene oxide groups is high enough so that the poly(alkylene oxide) ligand has a high degree of hydrophilicity. In some embodiments, the ratio of ethylene oxide groups to propylene oxide groups is low enough so that the ligand has a desired resilience. In some embodiments, the ratio of ethylene oxide groups to propylene oxide groups is about 15:1 to about 1:15, about 15:1 to about 1:10, about 15:1 to about 1:5, about 10:1 to 1:15, about 10:1 to 1:10, about 10:1 to 1:5, about 5:1 to 1:15, about 5:1 to 1:10, or about 5:1 to 1:5.

[0146] In some embodiments, the poly(alkylene oxide) additive has Formula IV: [ka] (In the formula, x is 1 to 100; y is between 0 and 100; R 1A and R 1B are independently H or C 1~20 is alkyl; R 2 is C 1~20 is alkyl; X1 is a bond or C 1~12 is alkyl; X2 is a bond, —O—, —OC(═O)— or amide; FG is -OH, -NH2, -NH4 + , -N3, -C(=O)OR 3 , -P(=O)(OR 4 )3 or -P(R 5 )4; R 3 is H, C 1~20 Alkyl or C 6~14 is aryl; R 4 are independently H, C 1~20 Alkyl or C 6~14 is aryl; and R 5 are independently H, C 1~20 Alkyl or C 6~14 (aryl) It has the following structure.

[0147] In some embodiments, x is 1 to 100, 1 to 50, 1 to 20, 1 to 10, 1 to 5, 5 to 100, 5 to 50, 5 to 20, 5 to 10, 10 to 100, 10 to 50, 10 to 20, 20 to 100, 20 to 50, or 50 to 100. In some embodiments, x is 10 to 50. In some embodiments, x is 10 to 20. In some embodiments, x is 1. In some embodiments, x is 19. In some embodiments, x is 6. In some embodiments, x is 10.

[0148]

[0146] The value of x should be understood as being modified by the word "about." Thus, a value of x = 1 is understood to mean x = 1 ± 0.1. For example, a value of x = 1 is understood to mean 0.9 to 1.1.

[0149] In some embodiments, y is 1 to 100, 1 to 50, 1 to 20, 1 to 10, 1 to 5, 5 to 100, 5 to 50, 5 to 20, 5 to 10, 10 to 100, 10 to 50, 10 to 20, 20 to 100, 20 to 50, or 50 to 100. In some embodiments, y is 1 to 30. In some embodiments, y is 1 to 10. In some embodiments, y is 9. In some embodiments, y is 3. In some embodiments, y is 29. In some embodiments, y is 10.

[0150]

[0148] The value of y should be understood as being modified by the word "about." Thus, a value of y = 1 is understood to mean y = 1 ± 0.1. For example, a value of y = 1 is understood to mean 0.9 to 1.1.

[0151] In some embodiments, the ratio of x to y is about 15:1 to about 1:15, about 15:1 to about 1:10, about 15:1 to about 1:5, about 10:1 to about 1:15, about 10:1 to about 1:10, about 10:1 to about 1:5, about 5:1 to about 1:15, about 5:1 to about 1:10, or about 5:1 to about 1:5. In some embodiments, the ratio of x to y is about 1:9. In some embodiments, the ratio of x to y is about 19:3. In some embodiments, the ratio of x to y is about 6:29. In some embodiments, the ratio of x to y is about 31:10.

[0152] In some embodiments, R 1A is H. In some embodiments, R 1A is C 1~20 In some embodiments, R 1A is C 1~10 In some embodiments, R 1A is C 1~5 In some embodiments, R 1A is -CH3.

[0153] In some embodiments, R 1B is H. In some embodiments, R 1B is C 1~20 In some embodiments, R 1B is C 1~10 In some embodiments, R 1B is C 1~5 In some embodiments, R 1B is -CH3.

[0154] In some embodiments, R 1A is H and R 1B is —CH. In some embodiments, R 1A is -CH3 and R 1B is H. In some embodiments, R 1A is H and R 1B is H. In some embodiments, R1A is -CH3 and R 1B is -CH3.

[0155] In some embodiments, R 2 is C 1~20 In some embodiments, R 2 is C 1~10 In some embodiments, R 2 is C 1~5 In some embodiments, R 2 is -CH2CH3.

[0156] In some embodiments, X is a bond. In some embodiments, X is C 1~12 It is alkyl.

[0157] In some embodiments, X2 is a bond. In some embodiments, X2 is -OC(=O)-. In some embodiments, X2 is an amide.

[0158] In some embodiments, FG is -OH. In some embodiments, FG is -NH. In some embodiments, FG is -NH. + In some embodiments, FG is -N3. In some embodiments, FG is -C(=O)OR 3 In some embodiments, FG is -P(=O)(OR 4 )3. In some embodiments, FG is -P(R 5 )4.

[0159] In some embodiments, R 3 is H. In some embodiments, R 3 is C 1~20 In some embodiments, R 3 is C 1~10 In some embodiments, R 3 is C 1~5In some embodiments, R 3 is —CH. In some embodiments, R 3 is C 3~8 In some embodiments, R 3 is C 6~14 In some embodiments, R 3 is phenyl, naphthyl, phenanthryl, anthracyl, indenyl, azulenyl, biphenyl, biphenylenyl or fluorenyl.

[0160] In some embodiments, R 4 is H. In some embodiments, R 4 is C 1~20 In some embodiments, R 4 is C 1~10 In some embodiments, R 4 is C 1~5 In some embodiments, R 4 is —CH. In some embodiments, R 4 is C 3~8 In some embodiments, R 4 is C 6~14 In some embodiments, R 4 is phenyl, naphthyl, phenanthryl, anthracyl, indenyl, azulenyl, biphenyl, biphenylenyl or fluorenyl.

[0161] In some embodiments, R 5 is H. In some embodiments, R 5 is C 1~20 In some embodiments, R 5 is C 1~10 In some embodiments, R 5 is C 1~5 In some embodiments, R 5 is —CH. In some embodiments, R 5 is C 3~8In some embodiments, R 5 is C 6~14 In some embodiments, R 5 is phenyl, naphthyl, phenanthryl, anthracyl, indenyl, azulenyl, biphenyl, biphenylenyl or fluorenyl.

[0162] In some embodiments, in Formula IV, R 1A is H, FG is —NH, and the poly(alkylene oxide) ligand is of formula V: [ka] (In the formula, x is 1 to 100; y is between 0 and 100; X1 is a bond or C 1~12 is alkylene; X2 is a bond, —O—, —OC(═O)— or amide; R 1B is H or C 1~20 is alkyl; and R 2 is C 1~20 alkyl) It has the following structure.

[0163] In some embodiments, x is 1 to 100, 1 to 50, 1 to 20, 1 to 10, 1 to 5, 5 to 100, 5 to 50, 5 to 20, 5 to 10, 10 to 100, 10 to 50, 10 to 20, 20 to 100, 20 to 50, or 50 to 100. In some embodiments, y is 1 to 100, 1 to 50, 1 to 20, 1 to 10, 1 to 5, 5 to 100, 5 to 50, 5 to 20, 5 to 10, 10 to 100, 10 to 50, 10 to 20, 20 to 100, 20 to 50, or 50 to 100.

[0164]

[0162] In some embodiments, the ratio of x to y is about 15:1 to about 1:15, about 15:1 to about 1:10, about 15:1 to about 1:5, about 10:1 to 1:15, about 10:1 to 1:10, about 10:1 to 1:5, about 5:1 to 1:15, about 5:1 to 1:10, or about 5:1 to 1:5.

[0165] In some embodiments, R 1B is H. In some embodiments, R 1B is C 1~20 In some embodiments, R 1B is C 1~10 In some embodiments, R 1B is C 1~5 In some embodiments, R 1B is -CH3.

[0166] In some embodiments, R 2 is C 1~20 In some embodiments, R 2 is C 1~10 In some embodiments, R 2 is C 1~5 In some embodiments, R 2 is -CH2CH3.

[0167] In some embodiments, X is a bond. In some embodiments, X is C 1~12 It is alkyl.

[0168] In some embodiments, X2 is a bond. In some embodiments, X2 is -OC(=O)-. In some embodiments, X2 is an amide.

[0169] In some embodiments, in Formula IV, R 1A is H and R 1Bis —CH 3 , X 1 is a bond, X 2 is a bond, FG is —NH 2 , and the poly(alkylene oxide) ligand has the formula VI: [ka] (In the formula, x is 1 to 100; y is between 0 and 100; and R 2 is C 1~20 alkyl) It has the following structure.

[0170] In some embodiments, x is 1 to 100, 1 to 50, 1 to 20, 1 to 10, 1 to 5, 5 to 100, 5 to 50, 5 to 20, 5 to 10, 10 to 100, 10 to 50, 10 to 20, 20 to 100, 20 to 50, or 50 to 100. In some embodiments, x is 10 to 50. In some embodiments, x is 10 to 20. In some embodiments, x is 1. In some embodiments, x is 19. In some embodiments, x is 6. In some embodiments, x is 10.

[0171] In some embodiments, R 2 is C 1~20 In some embodiments, R 2 is C 1~10 In some embodiments, R 2 is C 1~5 In some embodiments, R 2 is -CH2CH3.

[0172] In some embodiments, the amine-terminated polymer is an amine-terminated polymer commercially available from Huntsman Petrochemical Corporation. In some embodiments, the amine-terminated polymer of formula (VI) is an amine-terminated polymer having x=1, y=9, and R 2=-CH3, which is JEFFAMINE M-600 (Huntsman Petrochemical Corporation, Texas). JEFFAMINE M-600 has a molecular weight of about 600. In some embodiments, the amine-terminated polymer of formula (III) has x=19, y=3 and R 2 = -CH3, which is JEFFAMINE M-1000 (Huntsman Petrochemical Corporation, Texas). JEFFAMINE M-1000 has a molecular weight of about 1,000. In some embodiments, the amine-terminated polymer of formula (III) has x=6, y=29 and R 2 = -CH3, which is JEFFAMINE M-2005 (Huntsman Petrochemical Corporation, Texas). JEFFAMINE M-2005 has a molecular weight of about 2,000. In some embodiments, the amine-terminated polymer of formula (III) has x=31, y=10, and R 2 = -CH3, which is JEFFAMINE M-2070 (Huntsman Petrochemical Corporation, Texas). JEFFAMINE M-2070 has a molecular weight of approximately 2,000.

[0173] In some embodiments, in Formula IV, R 1A is H, FG is -N3, and the poly(alkylene oxide) ligand is of formula VII: [ka] (In the formula, x is 1 to 100; y is between 0 and 100; X1 is a bond or C 1~12 is alkyl; X2 is a bond, —O—, —OC(═O)— or amide; and R 2 is C 1~20 alkyl) It has the following structure.

[0174] In some embodiments, x is 1 to 100, 1 to 50, 1 to 20, 1 to 10, 1 to 5, 5 to 100, 5 to 50, 5 to 20, 5 to 10, 10 to 100, 10 to 50, 10 to 20, 20 to 100, 20 to 50, or 50 to 100. In some embodiments, y is 1 to 100, 1 to 50, 1 to 20, 1 to 10, 1 to 5, 5 to 100, 5 to 50, 5 to 20, 5 to 10, 10 to 100, 10 to 50, 10 to 20, 20 to 100, 20 to 50, or 50 to 100.

[0175] In some embodiments, R 2 is C 1~20 In some embodiments, R 2 is C 1~10 In some embodiments, R 2 is C 1~5 In some embodiments, R 2 is -CH2CH3.

[0176] In some embodiments, X is a bond. In some embodiments, X is C 1~12 It is alkyl.

[0177] In some embodiments, X2 is a bond. In some embodiments, X2 is -OC(=O)-. In some embodiments, X2 is an amide.

[0178] In some embodiments, in Formula IV, R 1A is -H, and R 1B is -H, X1 is a bond, X2 is a bond, FG is -N3, and the poly(alkylene oxide) ligand has the formula VIII: [ka] (In the formula, x is 1 to 100; y is between 0 and 100; and R 2 is C 1~20 alkyl) It has the following structure.

[0179] In some embodiments, x is 1 to 100, 1 to 50, 1 to 20, 1 to 10, 1 to 5, 5 to 100, 5 to 50, 5 to 20, 5 to 10, 10 to 100, 10 to 50, 10 to 20, 20 to 100, 20 to 50, or 50 to 100. 1. In some embodiments, x is 19. In some embodiments, x is 6. In some embodiments, x is 10.

[0180] In some embodiments, R 2 is C 1~20 In some embodiments, R 2 is C 1~10 In some embodiments, R 2 is C 1~5 In some embodiments, R 2 is -CH2CH3.

[0181] In some embodiments, the azide-terminated polymer is a commercially available azide-terminated polymer available from Sigma-Aldrich, for example, methoxypolyethylene glycol azide (average M n = 2000 (where y = 1), methoxypolyethylene glycol azide (average M n = 10,000 (where y = 1), methoxypolyethylene glycol azide (average M n = 2000 (where y = 1), O-(2-(azidoethyl)-O'-methyl-triethylene glycol (where x = 3, y = 1), O-(2-(azidoethyl)-O'-methyl-undecaethylene glycol (where x = 11, y = 1), O-(2-(azidoethyl)-O'-methyl-nonaethylene glycol (where x = 19, y = 1), poly(ethylene glycol) methyl ether azide (average M n= 400 (where y = 1)) or poly(ethylene glycol) methyl ether azide (average M n =1,000 (where y=1).

[0182] In some embodiments, in Formula IV, R 1A is —H, FG is —COH, and the poly(alkylene oxide) ligand is of formula IX: [ka] (In the formula, x is 1 to 100; y is between 0 and 100; X1 is a bond or C 1~12 is alkyl; X2 is a bond, —O—, —OC(═O)— or amide; and R 2 is C 1~20 alkyl) It has the following structure.

[0183] In some embodiments, x is 1 to 100, 1 to 50, 1 to 20, 1 to 10, 1 to 5, 5 to 100, 5 to 50, 5 to 20, 5 to 10, 10 to 100, 10 to 50, 10 to 20, 20 to 100, 20 to 50, or 50 to 100. In some embodiments, y is 1 to 100, 1 to 50, 1 to 20, 1 to 10, 1 to 5, 5 to 100, 5 to 50, 5 to 20, 5 to 10, 10 to 100, 10 to 50, 10 to 20, 20 to 100, 20 to 50, or 50 to 100.

[0184] In some embodiments, R 2 is C 1~20 In some embodiments, R 2 is C 1~10 In some embodiments, R 2 is C 1~5 In some embodiments, R 2 is -CH2CH3.

[0185] In some embodiments, X is a bond. In some embodiments, X is C 1~12 It is alkyl.

[0186] In some embodiments, X2 is a bond. In some embodiments, X2 is -OC(=O)-. In some embodiments, X2 is an amide.

[0187] In some embodiments, in Formula IV, R 1A is -H, and R 1B is -H, X1 is a bond, X2 is a bond, FG is -CO2H, and the poly(alkylene oxide) ligand has the formula X: [ka] (In the formula, x is 1 to 100; y is between 0 and 100; and R 2 is C 1~20 alkyl) It has the following structure.

[0188] In some embodiments, x is 1 to 100, 1 to 50, 1 to 20, 1 to 10, 1 to 5, 5 to 100, 5 to 50, 5 to 20, 5 to 10, 10 to 100, 10 to 50, 10 to 20, 20 to 100, 20 to 50, or 50 to 100. In some embodiments, y is 1 to 100, 1 to 50, 1 to 20, 1 to 10, 1 to 5, 5 to 100, 5 to 50, 5 to 20, 5 to 10, 10 to 100, 10 to 50, 10 to 20, 20 to 100, 20 to 50, or 50 to 100.

[0189] In some embodiments, R 2 is C 1~20 In some embodiments, R 2 is C 1~10 In some embodiments, R 2 is C 1~5 In some embodiments, R2 is -CH2CH3.

[0190] In some embodiments, the carboxylic acid terminated polymer of Formula X is a commercially available carboxylic acid terminated polymer available from Sigma-Aldrich, such as methoxypolyethylene glycol propionic acid (average M n =5,000 (where y=1).

[0191] In some embodiments, in Formula IV, R 1A is —H, FG is —OH, and the poly(alkylene oxide) ligand is of formula XI: [ka] (In the formula, x is 1 to 100; y is between 0 and 100; X1 is a bond or C 1~12 is alkyl; X2 is a bond, —O—, —OC(═O)— or amide; and R 2 is C 1~20 alkyl) It has the following structure.

[0192] In some embodiments, x is 1 to 100, 1 to 50, 1 to 20, 1 to 10, 1 to 5, 5 to 100, 5 to 50, 5 to 20, 5 to 10, 10 to 100, 10 to 50, 10 to 20, 20 to 100, 20 to 50, or 50 to 100. In some embodiments, y is 1 to 100, 1 to 50, 1 to 20, 1 to 10, 1 to 5, 5 to 100, 5 to 50, 5 to 20, 5 to 10, 10 to 100, 10 to 50, 10 to 20, 20 to 100, 20 to 50, or 50 to 100.

[0193] In some embodiments, R 2 is C 1~20 In some embodiments, R 2 is C 1~10In some embodiments, R 2 is C 1~5 In some embodiments, R 2 is -CH2CH3.

[0194] In some embodiments, X is a bond. In some embodiments, X is C 1~12 It is alkyl.

[0195] In some embodiments, X2 is a bond. In some embodiments, X2 is -OC(=O)-. In some embodiments, X2 is an amide.

[0196] In some embodiments, in Formula IV, R 1A is -H, and R 1B is -H, X1 is a bond, X2 is a bond, FG is -OH, and the poly(alkylene oxide) ligand has the formula XII: [ka] (In the formula, x is 1, ~100; y is between 0 and 100; and R 2 is C 1~20 alkyl) It has the following structure.

[0197] In some embodiments, x is 1 to 100, 1 to 50, 1 to 20, 1 to 10, 1 to 5, 5 to 100, 5 to 50, 5 to 20, 5 to 10, 10 to 100, 10 to 50, 10 to 20, 20 to 100, 20 to 50, or 50 to 100. In some embodiments, y is 1 to 100, 1 to 50, 1 to 20, 1 to 10, 1 to 5, 5 to 100, 5 to 50, 5 to 20, 5 to 10, 10 to 100, 10 to 50, 10 to 20, 20 to 100, 20 to 50, or 50 to 100.

[0198] In some embodiments, R 2 is C1~20 In some embodiments, R 2 is C 1~10 It is alkyl.

[0199] In some embodiments, R 2 is C 1~5 In some embodiments, R 2 is -CH2CH3.

[0200] In some embodiments, the hydroxy-terminated polymer of Formula XII is a commercially available hydroxy-terminated polymer available from Sigma-Aldrich, for example, poly(ethylene glycol) methyl ether (average M n = 550 (where y = 1), poly(ethylene glycol) methyl ether (average M n = 750 (where y = 1), poly(ethylene glycol) methyl ether (average M n = 5,000 (where y = 1) or poly(ethylene glycol) methyl ether (average M n =10,000 (where y=1).

[0201] In some embodiments, the weight percentage of the poly(alkylene oxide) additive in the nanostructure composition is from about 0.05% to about 2%, hi some embodiments, the weight percentage of the poly(alkylene oxide) additive in the nanostructure composition is from about 0.05% to about 2%, from about 0.05% to about 1.5%, from about 0.05% to about 1%, from about 0.05% to about 0.5%, from about 0.05% to about 0.1%, from about 0.1% to about 2%, from about 0.1% to about 1.5%, from about 0.1% to about 1%, from about 0.1% to about 0.5%, from about 0.5% to about 2%, from about 0.5% to about 1.5%, from about 0.5% to about 1%, from about 1% to about 2%, from about 1% to about 1.5%, or from about 1.5% to about 2%. In some embodiments, the weight percentage of the nanostructures in the nanostructure composition is from about 0.1% to about 0.5%.

[0202] Nanostructured Composition

[0200] In some embodiments, the nanostructure composition further comprises one or more additional ingredients such as surface active compounds, lubricants, wetting agents, dispersants, hydrophobizing agents, adhesives, flow improvers, defoamers, deaerators, diluents, adjuvants, colorants, dyes, pigments, sensitizers, stabilizers, antioxidants, viscosity modifiers and inhibitors.

[0203] In some embodiments, the nanostructure compositions described herein are used in the construction of electronic devices. In some embodiments, the nanostructure compositions described herein are used in the construction of electronic devices selected from the group consisting of nanostructured films, displays, lighting devices, backlight units, color filters, surface emitting devices, electrodes, magnetic storage devices, and batteries. In some embodiments, the nanostructure compositions described herein are used in the construction of light emitting devices.

[0204] Methods are provided that include depositing a nanostructure composition to form a layer on a substrate. In some embodiments, the depositing is by inkjet printing. In some embodiments, the method further includes at least partial removal of the substantially anhydrous organic solvent. In some embodiments, the at least partial removal of the substantially anhydrous organic solvent includes air drying. In some embodiments, the at least partial removal of the substantially anhydrous organic solvent includes applying heat. In some embodiments, the substrate is a first conductive layer. In some embodiments, the method further includes depositing a second conductive layer on the nanostructure composition. In some embodiments, the method further includes depositing a first transport layer on the first conductive layer, the first transport layer configured to facilitate transport of holes from the first conductive layer to the layer comprising the nanostructure composition; and depositing a second transport layer on the layer comprising the nanostructure composition, the second transport layer configured to facilitate transport of electrons from the second conductive layer to the layer comprising the nanostructure composition. In some embodiments, the nanostructure composition is deposited in a pattern.

[0205] Nanostructured Molded Articles In some embodiments, the nanostructure composition is used to form a nanostructured molded article. In some embodiments, the nanostructured molded article is a liquid crystal display (LCD) or a light emitting diode (LED). In some embodiments, the nanostructure composition is used to form a light emitting layer of a lighting device. The lighting device can be used in a variety of applications, such as flexible electronics, touch screens, monitors, televisions, mobile phones, and any high resolution display. In some embodiments, the lighting device is a light emitting diode or a liquid crystal display. In some embodiments, the lighting device is a quantum dot light emitting diode (QLED). An example of a QLED is disclosed in U.S. Patent Application No. 15 / 824,701, the entire contents of which are incorporated herein by reference.

[0206]

[0204] In some embodiments, the present disclosure provides (a) a first conductive layer; (b) a second conductive layer; (c) a light-emitting layer between the first conductive layer and the second conductive layer; wherein the light-emitting layer comprises at least one population of nanostructures, the nanostructures comprising: (i) at least one organic solvent; (ii) at least one nanostructure comprising a core and at least one shell, the at least one nanostructure comprising an inorganic ligand bound to a surface of the nanostructure; and (iii) at least one poly(alkylene oxide) additive.

[0207]

[0205] In some embodiments, the present disclosure provides (a) a first conductive layer; (b) a second conductive layer; (c) a light-emitting layer between the first conductive layer and the second conductive layer; The present invention provides a light-emitting diode comprising: a light-emitting layer comprising at least one population of nanostructures, the nanostructures comprising: (i) at least one organic solvent; (ii) at least one nanostructure comprising a core and at least one shell, the nanostructure comprising an inorganic ligand bound to a surface of the nanostructure, the inorganic ligand comprising a halometalate anion and an organic cation; and (iii) at least one poly(alkylene oxide) additive.

[0208]

[0206] In some embodiments, the light-emitting layer is a nanostructured film.

[0209] In some embodiments, the light emitting diode includes a first conductive layer, a second conductive layer, and a light emitting layer, the light emitting layer being disposed between the first conductive layer and the second conductive layer. In some embodiments, the light emitting layer is a thin film.

[0210] In some embodiments, the light-emitting diode includes additional layers between the first conductive layer and the second conductive layer, such as a hole injection layer, a hole transport layer, and an electron transport layer. In some embodiments, the hole injection layer, the hole transport layer, and the electron transport layer are thin films. In some embodiments, these layers are laminated on a substrate.

[0211]

[0209] When a voltage is applied to the first conductive layer and the second conductive layer, holes injected into the first conductive layer move to the light-emitting layer via the hole injection layer and / or the hole transport layer, and electrons injected from the second conductive layer move to the light-emitting layer via the electron transport layer. The holes and electrons recombine in the light-emitting layer to generate excitons.

[0212] Fabrication of nanostructured layers In some embodiments, the nanostructure layer can be embedded in a polymer matrix. As used herein, the term "embedded" is used to indicate that the nanostructure population is surrounded or encased in a polymer that constitutes the majority of the matrix's components. In some embodiments, the at least one nanostructure population is suitably uniformly distributed throughout the matrix. In some embodiments, the at least one nanostructure population is distributed in an application-specific distribution. In some embodiments, the nanostructures are mixed into a polymer and applied to the surface of a substrate.

[0213] In some embodiments, the nanostructure composition is deposited to form a nanostructure layer. In some embodiments, the nanostructure composition can be deposited by any suitable method known in the art, including, but not limited to, painting, spray coating, solvent spraying, wet coating, adhesive coating, spin coating, tape coating, roll coating, flow coating, inkjet vapor jetting, drop casting, blade coating, mist deposition, or a combination thereof. In some embodiments, the nanostructure composition can be deposited by inkjet printing.

[0214] The nanostructure composition can be coated directly onto a desired layer of a substrate. Alternatively, the nanostructure composition can be formed into a solid layer as a separate element and subsequently attached to a substrate. In some embodiments, the nanostructure composition can be deposited onto one or more barrier layers.

[0215] In some embodiments, the nanostructured layer is cured after deposition. Suitable curing methods include photocuring, such as UV curing, and thermal curing. Conventional film-by-film processing methods, tape coating methods, and / or roll-to-roll manufacturing methods can be used to form the nanostructured layer.

[0216] In some embodiments, the nanostructure composition is thermally cured to form the nanostructured layer. In some embodiments, the composition is cured using UV light. In some embodiments, the nanostructure composition is coated directly onto the barrier layer of the nanostructured film, and then an additional barrier layer is deposited onto the nanostructured layer to form the nanostructured film. A support substrate can be used under the barrier film to impart strength, stability, and coating uniformity and to prevent material inconsistencies, bubble formation, and wrinkling or folding of the barrier layer material or other materials. Additionally, one or more barrier layers are preferably deposited on the nanostructured layer to seal the material between the top and bottom barrier layers. Suitably, the barrier layers can be stacked as a laminate film, optionally sealed or further processed, and the nanostructured film can then be incorporated into a particular lighting device. The nanostructure composition deposition process can include additional or different components, as will be understood by those skilled in the art. Such embodiments allow for in-line process adjustment of the nanostructures' emission characteristics, such as brightness and color (e.g., to adjust the white point of the quantum dots), as well as the film thickness and other properties of the nanostructured film. Furthermore, these embodiments allow for periodic testing of the nanostructured film's properties during production, and any necessary changes can be made to achieve precise nanostructured film properties. Because a computer program can be used to electronically vary the amounts of each of the mixtures used to form the nanostructured film, such testing and adjustments can also be made without changing the mechanical configuration of the processing line.

[0217] Barrier layer In some embodiments, the molded article includes one or more barrier layers disposed on either one or both sides of the nanostructured layer. Suitable barrier layers protect the nanostructured layer and the molded article from ambient conditions such as high temperatures, oxygen, and moisture. Suitable barrier materials include non-yellowing, transparent optical materials that are hydrophobic, chemically and mechanically compatible with the molded article, exhibit photostability and chemical stability, and can withstand high temperatures. In some embodiments, the one or more barrier layers are index-matched to the molded article. In some embodiments, the matrix material of the molded article and one or more adjacent barrier layers are index-matched and have similar refractive indices, so that a majority of light transmitted through the barrier layer toward the molded article passes from the barrier layer into the nanostructured layer. This index matching reduces optical losses at the interface between the barrier and matrix materials.

[0218] The barrier layer is suitably a solid material and may be a hardened liquid, gel, or polymer. The barrier layer may comprise a flexible or non-flexible material depending on the particular application. The barrier layer is preferably a planar layer and may comprise any suitable shape and surface area configuration depending on the particular lighting application. In some embodiments, one or more barrier layers are compatible with layer-by-layer film processing techniques, whereby a nanostructured layer is disposed on at least one first barrier layer and at least one second barrier layer is disposed on the nanostructured layer opposite the nanostructured layer to form a nanostructured molded article according to an embodiment of the present invention. Suitable barrier materials include any suitable barrier material known in the art. In some embodiments, suitable barrier materials include glass, polymers, and oxides. Suitable barrier layer materials include, but are not limited to, polymers such as polyethylene terephthalate (PET); oxides such as silicon oxide, titanium oxide, or aluminum oxide (e.g., SiO2, SiO3, TiO2, or Al2O3); and suitable combinations thereof. Preferably, each barrier layer of the molded article comprises at least two layers comprising different materials or compositions, and this multi-layer barrier prevents or reduces the alignment of pinhole defects in the barrier layer and provides an effective barrier against oxygen and moisture penetration into the nanostructured layer. The nanostructured layer can comprise any suitable material or combination of materials and any suitable number of barrier layers on either or both sides of the nanostructured layer. The material, thickness, and number of barrier layers depend on the particular application and are suitably selected to minimize the thickness of the nanostructured molded article while maximizing the barrier protection and brightness of the nanostructured layer. In preferred embodiments, each barrier layer comprises a laminate film, preferably a bilaminate film, where the thickness of each barrier layer is thick enough to avoid wrinkles during roll-to-roll or additive manufacturing processes. The number or thickness of the barriers may further depend on regulatory toxicity guidelines in embodiments in which the nanostructures contain heavy metals or other toxic materials, which may require more or thicker barrier layers. Additional barrier considerations include cost, availability, and mechanical strength.

[0219] In some embodiments, the nanostructured film comprises two or more barrier layers adjacent to each side of the nanostructured layer, e.g., two or three layers on each side of the nanostructured layer, or two barrier layers on each side. In some embodiments, each barrier layer comprises a thin glass sheet, e.g., a glass sheet having a thickness of about 100 μm, 100 μm or less, or 50 μm or less.

[0220] Each barrier layer of the molded article can have any suitable thickness, depending on the lighting device and application, as well as the particular requirements and properties of the individual film components, such as the barrier layer and nanostructured layer, as will be understood by those skilled in the art. In some embodiments, each barrier layer can have a thickness of 50 μm or less, 40 μm or less, 30 μm or less, 25 μm or less, 20 μm or less, or 15 μm or less. In some embodiments, the barrier layer comprises an oxide coating that can include materials such as silicon oxide, titanium oxide, and aluminum oxide (e.g., SiO2, SiO3, TiO2, or Al2O3). The oxide coating can have a thickness of about 10 μm or less, 5 μm or less, 1 μm or less, or 100 nm or less. In some embodiments, the barrier comprises a thin oxide coating having a thickness of about 100 nm or less, 10 nm or less, 5 nm or less, or 3 nm or less. The top and / or bottom barriers can consist of a thin oxide coating, or can comprise a thin oxide coating and one or more additional material layers.

[0221] Molded articles with improved properties In some embodiments, molded articles made using the nanostructure compositions described herein exhibit an EQE of about 1.5% to about 20%, about 1.5% to about 15%, about 1.5% to about 12%, about 1.5% to about 10%, about 1.5% to about 8%, about 1.5% to about 4%, about 1.5% to about 3%, about 3% to about 20%, about 3% to about 15%, about 3% to about 12%, about 3% to about 10%, about 3% to about 8%, about 8% to about 20%, about 8% to about 15%, about 8% to about 12%, about 8% to about 10%, about 10% to about 20%, about 10% to about 15%, about 10% to about 12%, about 12% to about 20%, about 12% to about 15%, or about 15% to about 20%. In some embodiments, the nanostructure composition comprises quantum dots.In some embodiments, the shaped article is a light emitting diode.

[0222] The photoluminescence spectrum of the molded article can span virtually any desired portion of the spectrum. In some embodiments, the molded article has an emission maximum of 300 nm to 750 nm, 300 nm to 650 nm, 300 nm to 550 nm, 300 nm to 450 nm, 450 nm to 750 nm, 450 nm to 650 nm, 450 nm to 550 nm, 450 nm to 750 nm, 450 nm to 650 nm, 450 nm to 550 nm, 550 nm to 750 nm, 550 nm to 650 nm, or 650 nm to 750 nm. In some embodiments, the molded article has an emission maximum of 450 nm to 550 nm. In some embodiments, the molded article has an emission maximum of 550 nm to 650 nm.

[0223]

[0221] The size distribution of molded articles made using the nanostructure compositions described herein can be relatively narrow. In some embodiments, molded articles made using the nanostructure compositions described herein have a size distribution of about 10 nm to about 50 nm, about 10 nm to about 45 nm, about 10 nm to about 35 nm, about 10 nm to about 30 nm, about 10 nm to about 25 nm, about 10 nm to about 22 nm, about 10 nm to about 20 nm, about 10 nm to about 15 nm, about 15 nm to about 50 nm, about 15 nm to about 45 nm, about 15 nm to about 35 nm, about 15 nm to about 30 nm, about 15 nm to about 25 nm, about 15 nm to about 22 nm, about 15 nm to about 20 nm, about 20 nm to about 50 nm, about 20 nm to about 4 5 nm, about 20 nm to about 35 nm, about 20 nm to about 30 nm, about 20 nm to about 25 nm, about 20 nm to about 22 nm, about 22 nm to about 50 nm, about 22 nm to about 45 nm, about 22 nm to about 35 nm, about 22 nm to about 30 nm, about 22 nm to about 25 nm, about 25 nm to about 50 nm, about 25 nm to about 45 nm, about 25 nm to about 35 nm, about 25 nm to about 30 nm, about 30 nm to about 50 nm, about 30 nm to about 45 nm, about 30 nm to about 35 nm, about 35 nm to about 50 nm, about 35 nm to about 45 nm, or about 45 nm to about 50 nm. In some embodiments, molded articles made using the nanostructure compositions described herein have a full width at half maximum of about 15 nm to about 30 nm. [Example]

[0224]

[0222] The following examples are illustrative, but not limiting, of the products and processes described herein. Suitable modifications and adaptations of the variety of conditions, formulations and other parameters normally encountered in this field and which will become apparent to those skilled in the art in light of this disclosure are within the spirit and scope of the invention.

[0225] Example 1 Synthesis of quantum dots

[0223] Quantum dots were synthesized using procedures described in US Patent Application Publication Nos. 2017 / 0066965 and 2017 / 0306227 and US Patent Application No. 16 / 422,242.

[0226] Example 2 Ligand exchange

[0224] The carboxylate ligands were exchanged with halozincate ligands (e.g., tetrachlorozincate, tetrafluorozincate, or dichlorodifluorozincate), which were expected to result in electrochemical oxidation at higher voltages than carboxylate ligands. In a next step, the potassium counterions of the tetrafluorozincate-capped nanostructures were exchanged with tetraalkylammonium cations, which provided solubility in nonpolar solvents and made the exchanged nanostructures compatible with typical fabrication methods for making electroluminescent quantum dot light-emitting diodes. Figure 1 is a flow chart illustrating the ligand exchange of carboxylate-capped nanostructures with tetrafluorozincate-capped nanostructures bearing tetraalkylammonium or didecyldimethylammonium anions.

[0227] The ligand exchange process is shown in Figure 1. In the first step, t-butylammonium fluoride (TBAF) and zinc difluoride (ZnF) were mixed in N-methylformamide (NMF) at room temperature to produce the dianionic halozincate TBAZnF. In the second step, the dianionic halozincate TBAZnF and oleate-capped quantum dots (QD-OA) were mixed in a mixture of toluene and NMF at 70 °C to produce the TBA-ZnF. In the third step, the TBA-ZnF was washed with toluene. In the fourth step, the TBA-ZnF was mixed with didecyldimethylammonium chloride (DDA-Cl) to produce the DDA-ZnF. In the fifth step, the DDA-ZnF was precipitated with acetonitrile. In the sixth step, the DDA-ZnF4-capped quantum dots were redispersed in toluene in preparation for use in devices.

[0228] Example 3 Nanostructured Ink Composition

[0226] Nanostructure ink compositions were formulated using well-dispersed red InP / ZnSe / ZnS quantum dots with DDA-ZnF4 ligands, JEFFAMINE M-1000 (as a poly(alkylene oxide) additive), and at least one solvent, as shown in Table 3.

[0229] [Table 3]

[0230] As can be seen from Table 3, various amounts of poly(alkylene oxide) additive JEFFAMINE M-1000 can be used. A minimum amount of poly(alkylene oxide) additive is required to achieve the best ink composition. This minimum amount is determined by the choice of solvent and quantum dot loading. For example, at a quantum dot loading of 1.7 wt% in a solvent mixture of 3-phenoxytoluene:octylbenzene (9:1), a loading of 0.05 wt% JEFFAMINE M-1000 was found to be insufficient to obtain a clear dispersion, while a loading of 0.1 wt% JEFFAMINE M-1000 was observed to provide sufficient dispersion (see Ink Sample 3). Furthermore, in the solvent mixture cyclohexylbenzene:4-methylanisole (1:1), a lower JEFFAMINE M-1000 loading of 0.05 wt% is sufficient to obtain adequate dispersion because this solvent mixture has a higher proportion of the more non-polar solvent cyclohexylbenzene (see Ink Sample 4). Generally, a minimum poly(alkylene oxide) additive loading of 2 wt% relative to the quantum dot loading is required for adequate dispersion.

[0231] It is also desirable not to use excessive amounts of additives, which may remain in the deposited quantum dot film and potentially alter device properties. Therefore, the poly(alkylene oxide) additive loading should not exceed 40 wt% of the quantum dot loading. No adverse effects on device external quantum efficiency or photoluminescence quantum yield were observed with 11 wt% poly(alkylene oxide) additive relative to the quantum dot loading, compared to a control device with quantum dots spin-coated using octane without the poly(alkylene oxide) additive (see Ink Sample 1).

[0232] Example 4 Nanostructured Ink Composition 1 A 2.3 mL stock solution of red InP / ZnSe / ZnS quantum dots with DDA-ZnF4 ligands in n-octane (quantum dot density in stock solution = 78 mg / mL (180 mg of quantum dots)) was dried under vacuum in a Schlenk flask. The dried quantum dots were redispersed in n-octylbenzene (1 mL) containing JEFFAMINE M-1000 (0.02 mL). The mixture was stirred at 70 °C until a clear solution was obtained. The quantum dot solution was then diluted with 1-methoxynaphthalene (9 mL), and the quantum dots remained well dispersed. The resulting ink was filtered through a PTFE 0.22 μm filter, degassed under vacuum, and then transferred into an ink cartridge.

[0233] Example 5 Comparative Example of Nanostructured Ink Composition 1 (Example 4)

[0230] The nanostructure ink composition of Example 4 was prepared without the use of a poly(alkylene oxide) additive.

[0234] A 2.3 mL stock solution of red InP / ZnSe / ZnS quantum dots with DDA-ZnF4 ligands in n-octane (quantum dot density in stock solution = 78 mg / mL (180 mg of quantum dots)) was dried under vacuum in a Schlenk flask. The dried quantum dots were redispersed in n-octylbenzene (1 mL). The mixture was stirred at 70 °C until a clear solution was obtained. The quantum dot solution was then diluted with 1-methoxynaphthalene (9 mL), which caused the quantum dots to aggregate and the mixture to become opaque. An ink formulation could not be obtained.

[0235] Example 6 Nanostructured Ink Composition 2 A 13.9 mL stock solution of red InP / ZnSe / ZnS quantum dots with DDA-ZnF4 ligands in n-octane (quantum dot density in stock solution = 78 mg / mL (1080 mg of quantum dots)) was dried under reduced pressure in a Schlenk flask. The dried quantum dots were redispersed in n-octylbenzene (3 mL) containing JEFFAMINE M-1000 (0.06 mL). The mixture was stirred at 70 °C until a clear solution was obtained. The quantum dot solution was then diluted with 1-methoxynaphthalene (27 mL), and the quantum dots remained well dispersed. The resulting ink was filtered through a PTFE 0.22 μm filter, degassed under reduced pressure, and then transferred into an ink cartridge.

[0236] Example 7 Nanostructured Ink Composition 3 A 2.3 mL stock solution of red InP / ZnSe / ZnS quantum dots with DDA-ZnF4 ligands in n-octane (quantum dot density in stock solution = 78 mg / mL (180 mg of quantum dots)) was dried under vacuum in a Schlenk flask. The dried quantum dots were redispersed in n-octylbenzene (1 mL) containing JEFFAMINE M-1000 (0.01 mL). The mixture was stirred at 70 °C until a clear solution was obtained. The quantum dot solution was then diluted with 1-3-phenoxytoluene (9 mL), and the quantum dots remained well dispersed. The resulting ink was filtered through a PTFE 0.22 μm filter, degassed under vacuum, and then transferred into an ink cartridge.

[0237] Example 8 Comparative Example of Nanostructured Ink Composition 3 (Example 7)

[0234] The nanostructure ink composition of Example 7 was prepared without the use of a poly(alkylene oxide) additive.

[0238]

[0235] A 2.3 mL stock solution of red InP / ZnSe / ZnS quantum dots with DDA-ZnF4 ligands in n-octane (quantum dot density in the stock solution = 78 mg / mL (180 mg of quantum dots)) was dried under vacuum in a Schlenk flask. The dried quantum dots were redispersed in n-octylbenzene (1 mL) containing JEFFAMINE M-1000 (0.005 mL). The mixture was stirred at 70 °C until a clear solution was obtained. The quantum dot solution was then diluted with 3-phenoxytoluene (9 mL), which caused the quantum dots to aggregate and the mixture to become opaque. An ink formulation could not be obtained.

[0239] Example 9 Nanostructured Ink Composition 4 A 2.3 mL stock solution of red InP / ZnSe / ZnS quantum dots with DDA-ZnF4 ligands in n-octane (quantum dot density in stock solution = 78 mg / mL (180 mg of quantum dots)) was dried under vacuum in a Schlenk flask. The dried quantum dots were redispersed in cyclohexylbenzene (5 mL) containing JEFFAMINE M-1000 (0.005 mL). The mixture was stirred at 70 °C until a clear solution was obtained. The quantum dot solution was then diluted with 4-methylanisole (5 mL), and the quantum dots remained well dispersed. The resulting ink was filtered through a PTFE 0.22 μm filter, degassed under vacuum, and then transferred into an ink cartridge.

[0240] Example 10 Nanostructured Ink Composition 5 A 13.9 mL stock solution of red InP / ZnSe / ZnS quantum dots with DDA-ZnF4 ligands in n-octane (quantum dot density in stock solution = 78 mg / mL (1080 mg of quantum dots)) was dried under vacuum in a Schlenk flask. The dried quantum dots were redispersed in n-decylbenzene (0.2 mL) containing JEFFAMINE M-1000 (0.004 mL). The mixture was stirred at 70 °C until a clear solution was obtained. The quantum dot solution was then diluted with 1-methoxynaphthalene (1.8 mL), and the quantum dots remained well dispersed. The resulting ink was filtered through a PTFE 0.22 μm filter, degassed under vacuum, and then transferred into an ink cartridge.

[0241] Example 11 Nanostructured Ink Composition 6 A 0.46 mL stock solution of red InP / ZnSe / ZnS quantum dots with DDA-ZnF4 ligands in n-octane (quantum dot density in stock solution = 78 mg / mL (36 mg of quantum dots)) was dried under vacuum in a Schlenk flask. The dried quantum dots were redispersed in cyclohexylbenzene (0.2 mL) containing JEFFAMINE M-1000 (0.004 mL). The mixture was stirred at 70 °C until a clear solution was obtained. The quantum dot solution was then diluted with 1-methoxynaphthalene (1.8 mL), and the quantum dots remained well dispersed. The resulting ink was filtered through a PTFE 0.22 μm filter, degassed under vacuum, and then transferred into an ink cartridge.

[0242] Example 12 Nanostructured ink composition with blue quantum dots A 1 mL stock solution of blue ZnSe / ZnS quantum dots with DDA-ZnF4 ligands in toluene (quantum dot density in stock solution = 18 mg / mL (18 mg of quantum dots)) was dried under reduced pressure in a Schlenk flask. The dried quantum dots were redispersed in 4-methylanisole (1 mL) containing JEFFAMINE M-1000 (0.005 mL). The mixture was stirred at 70 °C until a clear solution was obtained. The resulting ink was filtered through a PTFE 0.22 μm filter, degassed under reduced pressure, and then transferred into an ink cartridge.

[0243]

[0240] While various embodiments have been described above, it should be understood that they are provided by way of example only, not limitation. It will be apparent to those skilled in the relevant art that various changes in form and detail therein are possible without departing from the spirit and scope of the present invention. Accordingly, the breadth and scope of the present invention should not be limited by any of the above-described exemplary embodiments, but should be defined only by the following claims and their equivalents.

[0244]

[0241] All publications, patents and patent applications mentioned in this specification are indicative of the level of skill of those skilled in the art to which this invention pertains, and each individual publication, patent or patent application is hereby incorporated by reference to the same extent as if it were specifically and individually indicated to be incorporated by reference.

Claims

1. (a) at least one organic solvent; (b) at least one nanostructure comprising a core and at least one shell, the at least one nanostructure comprising inorganic ligands bound to a surface of the nanostructure; (c) at least one poly(alkylene oxide) additive; Including, The at least one poly(alkylene oxide) has formula (IV): 【Chemistry 1】 (In the formula, x is 1 to 100; y is 0 to 100; R １Ａ and R １Ｂ are independently H or C １～２０ is alkyl, R ２ is C １～２０ is alkyl, X １ is a bond or C １～１２ is alkyl, X ２ is a bond, —O—, —OC(═O)— or amide, FG is -OH, -NH ２ , -NH ４ ＋ , -N ３ , -C(=O)OR ３ , -P(=O)(OR ４ ) ３ or -P(R ５ ) ４ and R ３ is H, C １～２０ Alkyl or C ６～１４ is aryl, R ４ are independently H, C １～２０ Alkyl or C ６～１４ is aryl, and R ５ are independently H, C １～２０ Alkyl or C ６～１４ aryl) having Nanostructured compositions.

2. 2. The nanostructure composition of claim 1 wherein x is from 2 to 20; and y is from 1 to 10.

3. R １Ａ is H, and R １Ｂ is CH ３ 3. The nanostructure composition of claim 1 or 2, wherein:

4. The at least one poly(alkylene oxide) is represented by Formula VI: 【Chemistry 2】 (In the formula, x is 1 to 100; y is 0 to 100, and R ２ is C １～２０ alkyl) The nanostructure composition of any one of claims 1 to 3, having 5. The inorganic ligand comprises an organic cation selected from the group consisting of tetraalkylammonium cations, alkylphosphonium cations, formamidinium cations, guanidinium cations, imidazolium cations, and pyridinium cations. The nanostructure composition of any one of claims 1 to 4.

6. The nanostructure composition of any preceding claim wherein said core comprises InP.

7. The nanostructure composition of any one of claims 1 to 6, wherein said at least one shell comprises a first shell comprising ZnSe and a second shell comprising ZnS.

8. The nanostructure composition of any one of claims 1 to 7 wherein said inorganic ligand comprises a halometalate anion.

9. The halometalate anion has the formula (I) to (III): MX ３ － (I), MX ４－ｘ Y ｘ － (II), or MX ４－ｘ Y ｘ ２－ (III) (In the formula, M is selected from the group consisting of Zn, Cd, Hg, Cu, Ag, and Au; X is selected from the group consisting of Br, Cl, F, and I; Y is selected from the group consisting of Br, Cl, F and I, and x is 0, 1 or 2.

9. The nanostructure composition of claim 8 having a structure of one of:

10. The nanostructure composition of any one of claims 1 to 9, wherein the weight percentage of the nanostructures in said nanostructure composition is from 0.5% to 10%.

11. The nanostructure composition of any one of claims 1 to 10, wherein said organic solvent has a surface tension of from 20 dynes / cm to 50 dynes / cm.

12. The organic solvent may be alkylnaphthalene, alkoxynaphthalene, alkylbenzene, aryl, alkyl-substituted benzene, cycloalkylbenzene, C ９ ~C ２０ The nanostructure composition of any one of claims 1 to 11 which is an alkane, diaryl ether, alkyl benzoate, aryl benzoate or alkoxy substituted benzene.

13. A method comprising depositing the nanostructure composition of any one of claims 1 to 12 to form a layer on a substrate.

14. The method of claim 13 , wherein the depositing is by inkjet printing.

15. (a) a first conductive layer; (b) a second conductive layer; (c) a light-emitting layer between the first conductive layer and the second conductive layer; and 13. A light emitting diode comprising: said light emitting layer being a nanostructured layer deposited with the nanostructure composition of any one of claims 1 to 12.

Images