Integrated optical device and integrated optical module

Abstract

To provide an integrated optical device which can achieve high reliability and further reduction in size.SOLUTION: An integrated optical device includes a plurality of subcarriers 20, a plurality of LDs 30 provided on the plurality of subcarriers 20, and a PLC 50 which is provided on a substrate 40 and arranged so as to make light emitted from emission surfaces 31 of the LDs 30 incident on a core 51. The subcarriers 20 have a low-profile structure. The LDs 30 are connected to the subcarriers 20 through a first metal layer 91. The LDs 30 are connected to the subcarriers 20 through the first metal layer 91. The PLC 50 has a plurality of cores 51 corresponding to the plurality of LDs 30, and the plurality of cores 51 are arranged substantially on the same plane and form an optical waveguide surface. In a state in which a mounting surface of the LDs 30 in the subcarriers 20 is rotated with respect to the optical waveguide surface, the subcarriers 20 and the substrate 40 are connected to each other.SELECTED DRAWING: Figure 2

Description

[Technical Field]

[0001] The present invention relates to an integrated optical device and an integrated optical module. [Background technology]

[0002] With the increase in data traffic, optical communication systems and various optical devices that use optical communication systems are becoming increasingly multifunctional. Recently, there has been a demand for higher density along with increased functionality, and multifunctional, compact optical devices are being investigated.

[0003] In recent years, silicon photonics technology, which integrates light-emitting and light-receiving elements into silicon waveguides, has advanced and is now being used in optical communication systems. Planar Lightwave Circuits (PLCs), which perform optical signal processing such as multiplexing, demultiplexing, and wavelength selection, are one of the most representative silicon waveguides used in optical communication systems.

[0004] In addition to optical communication systems, there is also a demand for multifunctional and compact optical devices that can perform multiple functions depending on the intended use and that can be carried around as a whole, such as in wearable devices and small projectors.

[0005] Conventionally, mirrors and lenses, for example, have been used to integrate multiple optical elements. Patent Document 1 discloses an optical module in which a laser diode (LD), an optical lens, a total reflection wavelength filter, a wavelength separation filter, a fiber collimator, and a photodiode are integrated in a common housing. In the optical module disclosed in Patent Document 1, light with a wavelength of 1.3 μm emitted from the LD passes through a condenser lens, a capillary, and a collimator lens, is totally reflected by the total reflection wavelength filter and the wavelength separation filter, and is received by the fiber collimator. Light with wavelengths of 1.49 μm and 1.55 μm input from the fiber collimator passes through the wavelength separation filter and is separated from each other by another wavelength separation filter. The separated 1.55 μm light is totally reflected by the total reflection wavelength filter and enters a photodiode via a coupling lens. The separated 1.49 μm light enters a photodiode via a coupling lens.

[0006] Patent Document 2 discloses an optical transceiver module in which an optical element mounting substrate, a lens array, and a wavelength multiplexer / demultiplexer are arranged in desired relative positions within a package. The wavelength multiplexer / demultiplexer is a device in which wavelength-selective filters and mirrors are mounted on the front and back surfaces of a transparent substrate. In the optical transceiver module disclosed in Patent Document 2, multiple light beams having different predetermined wavelengths are incident according to the arrangement of the wavelength-selective filters and mirrors, and are multiplexed by the wavelength multiplexer / demultiplexer.

[0007] As an integrated structure different from the free-space integration using mirrors and lenses as in Patent Documents 1 and 2, Patent Documents 3 and 4, for example, disclose optical devices with a waveguide structure. In the multiplexer disclosed in Patent Document 3, any number of N bare fibers with thin cladding are fixed to a chip-type substrate, and the output ends of the multiple bare fibers are bundled together. Patent Document 4 discloses an optical module in which a semiconductor chip and a PLC chip are integrated and integrated. The semiconductor chip has a semiconductor waveguide and is mounted on a first substrate.

[0008] In the optical module disclosed in Patent Document 4, the end face of the semiconductor chip facing the PLC chip and the end face of the PLC chip facing the semiconductor chip are separated from each other by a gap, and the semiconductor chip and the PLC chip are bonded together with an ultraviolet curing adhesive. [Prior art documents] [Patent documents]

[0009] [Patent Document 1] Japanese Patent Application Laid-Open No. 2005-309370 [Patent Document 2] Japanese Patent Application Laid-Open No. 2009-105106 [Patent Document 3] Japanese Patent Application Laid-Open No. 2016-118750 [Patent Document 4] Japanese Patent Application Laid-Open No. 2011-102819 Summary of the Invention [Problem to be solved by the invention]

[0010] However, the optical devices disclosed in Patent Documents 1 and 2 above have a large number of components, each of which is large in size, and are configured using mirrors and lenses in a free-space optical system. Considering the size of each component and the configuration of the free-space optical system, there are limits to the miniaturization of the optical devices disclosed in Patent Documents 1 and 2. In integrated optical devices using waveguides, as disclosed in Patent Documents 3 and 4, components are bonded together using UV-curable resin, making miniaturization easier than with free-space optical systems. However, in integrated optical devices using waveguides, UV-curable adhesives expand and contract due to temperature changes during processes such as wire bonding of the light source. This expansion and contraction of the UV-curable adhesive can reduce the alignment accuracy of the bonded components and potentially reduce the reliability of the integrated optical device. In integrated optical devices using waveguides, optical semiconductor elements such as integrated optical elements and laser diodes require electrical continuity with a substrate to operate. To achieve electrical continuity with the substrate, the optical semiconductor elements are connected to a power source on the substrate using methods such as wire bonding. If the strength with which the optical waveguide is fixed to the optical semiconductor element is insufficient, the optical semiconductor element may slip off during wire bonding, which could reduce the reliability of the integrated optical device. As such, in any of the technologies disclosed in Patent Documents 1 to 4, it is difficult to meet the need for further miniaturization while achieving high reliability, and there is still room for improvement.

[0011] The present invention has been made in view of the above circumstances, and provides an integrated optical device and an integrated optical module that can achieve high reliability and further miniaturization. [Means for solving the problem]

[0012] The integrated optical device of the present invention comprises a plurality of bases, a plurality of optical semiconductor elements provided on the plurality of bases, a substrate, and an optical waveguide provided on the substrate and arranged to allow light emitted from the plurality of optical semiconductor elements to be incident thereon, wherein the base has a low-profile structure, the optical semiconductor elements are connected to the base via a metal layer, the optical waveguide has a plurality of cores corresponding to the plurality of optical semiconductor elements, the plurality of cores are arranged on approximately the same plane to form an optical waveguide surface, and the base and the substrate are connected in a state where the mounting surface of the optical semiconductor elements on the base is rotated with respect to the optical waveguide surface.

[0013] In the integrated optical device of the present invention, the optical semiconductor element may have a low-profile structure, and the base and the substrate may be connected in a state where the mounting surface of the optical semiconductor element on the base is rotated with respect to the optical waveguide surface.

[0014] In the integrated optical device according to the present invention, the base and the substrate may be connected in a state in which the mounting surface is rotated by 90° with respect to the optical waveguide surface.

[0015] In the integrated optical device according to the present invention, the base and the substrate may be connected via a metal layer.

[0016] In the integrated optical device of the present invention, the plurality of optical semiconductor elements may be three or more optical semiconductor elements, the plurality of bases may be three or more bases on which the three or more optical semiconductor elements are mounted, and the three or more optical semiconductor elements may be arranged side by side and optically coupled to the optical waveguide.

[0017] In the integrated optical device of the present invention, the three or more optical semiconductor elements may be three optical semiconductor elements that emit red light, green light, and blue light, and the three or more bases may be three bases on which the three optical semiconductor elements are mounted.

[0018] In the integrated optical device according to the present invention, a gap space may be formed between the exit surface from which the light is emitted from the optical semiconductor element and the entrance surface of the optical waveguide into which the light is incident, and the light may be configured to be emitted from the exit surface, propagate through the gap space, and enter the core of the optical waveguide from the entrance surface.

[0019] In the integrated optical device according to the present invention, a resin may be provided between an exit surface from which the light is emitted from the optical semiconductor element and an entrance surface in the optical waveguide where the light is incident, and the light may be configured to be emitted from the exit surface, propagate through the resin, and enter the core of the optical waveguide from the entrance surface.

[0020] In the integrated optical module of the present invention, the above-mentioned integrated optical device may be housed in a package, and the integrated optical device may be fixed within the package via either a second metal layer or a second resin layer. [Effects of the Invention]

[0021] According to the present invention, it is possible to provide an integrated optical device and an integrated optical module that can achieve high reliability and further miniaturization. [Brief explanation of the drawings]

[0022] [Figure 1] FIG. 1 is a perspective view of an integrated optical device according to an embodiment of the present invention. [Figure 2] 2(a) is a cross-sectional view of the integrated optical device shown in FIG. 1 taken along line AA', and FIG. 2(b) is a side view of the integrated optical device shown in FIG. 1 taken in the y direction. [Figure 3] FIG. 3 is a cross-sectional view of the incident surface of the PLC of the integrated optical device shown in FIG. [Figure 4] FIG. 4 is an enlarged view of the cross-sectional view of FIG. [Figure 5] FIG. 5 is a plan view of a portion of the integrated optical device shown in FIG. [Figure 6] FIG. 6 is a plan view of an integrated optical module including the integrated optical device shown in FIG. [Figure 7] FIG. 7 is a side view of the integrated optical module shown in FIG. [Figure 8] FIG. 8 is a plan view of the integrated optical module shown in FIG. 6 with the cover removed. [Figure 9] FIG. 9 is a cross-sectional view of a part of the integrated optical module shown in FIG. 8 taken along line CC'. [Figure 10] FIG. 10 is a side view of the integrated optical module shown in FIG. 6 as seen along the direction in which light is emitted. [Figure 11] FIG. 11 is a perspective view showing an example of use of the integrated optical module shown in FIG. [Figure 12] FIG. 12 is a side view for explaining a method of manufacturing the integrated optical device shown in FIG. [Figure 13] FIG. 13 is a side view for explaining a method of manufacturing the integrated optical device shown in FIG. [Figure 14] FIG. 14 is a plan view for explaining a method of manufacturing the integrated optical device shown in FIG. [Figure 15] FIG. 15 is a graph illustrating a method for manufacturing the integrated optical device shown in FIG. 1, showing the relationship between the distance between the optical semiconductor element and the optical waveguide and the light utilization efficiency. [Figure 16] FIG. 16 is a plan view for explaining a method of manufacturing the integrated optical device shown in FIG. [Figure 17] FIG. 17 is a partial cross-sectional view of a modification of the integrated optical device shown in FIG. DETAILED DESCRIPTION OF THE INVENTION

[0023] Hereinafter, preferred embodiments of the integrated optical device and integrated optical module of the present invention will be described with reference to the drawings.

[0024] As shown in FIG. 1, an integrated optical device 10 of this embodiment includes a plurality of subcarriers (bases) 20, a plurality of LDs (optical semiconductor elements) 30, a substrate 40, and a PLC (optical waveguide) 50.

[0025] The integrated optical device 10 is, for example, a multiplexer that combines light of each of the three primary colors of light: red (R), green (G), and blue (B). The integrated optical device 10 can be used, for example, as a multiplexer mounted in a head-mounted display. In this specification, of the three primary color lights, red light refers to light having a peak wavelength of, for example, 610 nm or more and 750 nm or less. Green light refers to light having a peak wavelength of, for example, 500 nm or more and 560 nm or less. Blue light refers to light having a peak wavelength of, for example, 435 nm or more and 480 nm or less.

[0026] The integrated optical device 10 includes multiple LDs 30 mounted on multiple subcarriers 20. The integrated optical device 10 includes, for example, an LD 30-1 that emits red light, an LD 30-2 that emits green light, and an LD 30-3 that emits blue light. The LDs 30-1, 30-2, and 30-3 are spaced apart in the x direction and optically coupled to the PLC 50. However, the integrated optical device 10 may include multiple LDs 30, or may include three or more LDs 30. Furthermore, the multiple LDs 30 preferably have a low-profile structure in the arrangement direction (x direction) of the multiple LDs 30. The low-profile structure of the LDs 30 is not particularly limited, but may have an aspect ratio of 1:1 to 3:1, for example. Examples of low-profile structures include a flat structure and a wafer structure. The y direction is the emission direction of light emitted from the LDs 30, i.e., the direction along the optical axis. The x direction is a direction substantially perpendicular to the y direction, and the z direction is a direction perpendicular to the x and y directions.

[0027] The integrated optical device 10 includes a plurality of subcarriers 20, the number of which is equal to the number of LDs 30, for example, three subcarriers 20-1, 20-2, and 20-3. The three subcarriers 20-1, 20-2, and 20-3 have a low-profile structure in the arrangement direction (x direction) of the plurality of subcarriers 20. The low-profile structure of the subcarriers 20 is not particularly limited, but may have an aspect ratio of, for example, 4:3 to 9:4. The LDs 30 are mounted on the subcarriers 20 as bare chips. The LD 30-1 is provided on a side surface (surface) 21-1 of the subcarrier 20-1. The LD 30-2 is provided on a side surface (surface) 21-2 of the subcarrier 20-2. The LD 30-3 is provided on a side surface (surface) 21-3 of the subcarrier 20-3. However, the present invention is not limited thereto, and the integrated optical device 10 may include a plurality of subcarriers 20, or may include three or more subcarriers 20. In this case, the subcarriers 20 may have a low-profile structure.

[0028] The subcarrier 20 is made of, for example, aluminum nitride (AlN), aluminum oxide (Al2O3), silicon (Si), or the like. As shown in FIG. 2(b), a first metal layer 91 (metal layer) is provided between the subcarrier 20 and the LD 30. That is, the LD 30 is connected to the subcarrier 20 via the first metal layer 91. The first metal layer 91 includes a metal layer 75 in contact with the side surface 21 of the subcarrier 20 and a metal layer 76 in contact with the side surface of the metal layer 75 and the side surface 33 of the LD 30. In the integrated optical device 10, the subcarrier 20-1 and the LD 30-1 are connected in the x direction via a first metal layer 91-1 including a metal layer 75-1 and a metal layer 76-1. The subcarrier 20-2 and the LD 30-2 are connected in the x direction via a first metal layer 91-2 including a metal layer 75-2 and a metal layer 76-2. In the x direction, the subcarrier 20-3 and the LD 30-3 are connected via a first metal layer 91-3 having a metal layer 75-3 and a metal layer 76-3.

[0029] The method for forming the metal layers 75 and 76 constituting the first metal layer 91 is not specified. The metal layers 75 and 76 are formed in the x direction between the subcarrier 20 and the LD 30 by a known method, such as sputtering, vapor deposition, or application of a metal paste. The metal layer 75 is made of an alloy selected from the group consisting of an alloy of gold (Au) and tin (Sn), an alloy of tin (Sn) and copper (Cu), an alloy of indium (In) and bismuth (Bi), and a tin (Sn)-silver (Ag)-copper (Cu) solder alloy (SAC). The metal layer 76 is made of one or more metals selected from the group consisting of gold (Au), platinum (Pt), silver (Ag), lead (Pb), indium (In), and nickel (Ni).

[0030] The PLC 50 is provided on the substrate 40. The PLC 50 is fabricated on the upper surface 41 of the substrate 40 so as to be integrated with the substrate 40, for example, by a known semiconductor process. The substrate 40 is made of silicon (Si). The aforementioned semiconductor process includes photolithography and dry etching, which are used when forming fine structures such as integrated circuits.

[0031] An anti-reflection film 81 is provided on the rear, or near side, surface 42 of the substrate 40 in the y direction, and on the rear, or near side, surface of the PLC 50 in the y direction, including the incident surface 61 of the core 51 (FIG. 2(a)). An anti-reflection film 82 is provided on the front, or far side, surface of the substrate 40 in the y direction, and on the front, or far side, surface of the PLC 50 in the y direction, including the exit surface 64 of the core 51. The anti-reflection film 81 may be provided only on the rear side surface of the PLC 50 in the y direction. Similarly, the anti-reflection film 82 may be provided only on the front side surface of the PLC 50 in the y direction. Note that the third metal layer 93 and the anti-reflection films 81 and 82 are omitted from FIG. 1.

[0032] The anti-reflection films 81 and 82 are films that prevent incident or outgoing light from the PLC 50 from reflecting in the direction opposite to the direction of entry from the incident surface 61 or the outgoing surface 64, thereby increasing the transmittance of the incident or outgoing light. The anti-reflection films 81 and 82 are multilayer films in which, for example, multiple types of dielectrics are alternately stacked to predetermined thicknesses according to the wavelengths of the incident light, i.e., red, green, and blue light. The aforementioned dielectrics are, for example, titanium oxide (TiO), silicon oxide (SiO), aluminum oxide (AlO), etc.

[0033] As shown in FIG. 3, the PLC 50 has multiple cores 51 corresponding to the multiple LDs 30. For example, the PLC 50 includes cores 51-1, 51-2, and 51-3, the same number as the LDs 30-1, 30-2, and 30-3, and a cladding 52 surrounding the cores 51-1, 51-2, and 51-3 in a direction intersecting the y direction. The dimensions of each of the cores 51-1, 51-2, and 51-3 in the x and z directions are appropriately set in consideration of the wavelengths of the red, green, and blue light. The size of the cladding 52 in the z direction is not particularly limited and is appropriately set in consideration of the size of each of the cores 51-1, 51-2, and 51-3, and is, for example, approximately 50 μm.

[0034] The cores 51-1, 51-2, 51-3 and the cladding 52 are mainly made of quartz. The refractive index of each of the cores 51-1, 51-2, 51-3 is higher than the refractive index of the cladding 52 by a predetermined value. The cores 51-1, 51-2, 51-3 are doped with an impurity in an amount corresponding to the predetermined value. The impurity may be, for example, germanium (Ge).

[0035] In this embodiment, cores 51-1, 51-2, and 51-3 in the PLC 50 are arranged on approximately the same plane to form an optical waveguide surface. The subcarrier 20 and the substrate 40 are connected in a state where the mounting surface P of the LD 30 in the subcarrier 20 is rotated with respect to the optical waveguide surface. In other words, the LD 30 is attached to the side surface 21 of the subcarrier 20, which has a low-profile structure in the x direction. In this case, the cores 51-1, 51-2, and 51-3 in the PLC 50 and the core 51-4 (see FIG. 1) to which the cores 51-1, 51-2, and 51-3 are connected may be disposed on approximately the same plane to form the optical waveguide surface. It is also preferable that the mounting surface P1 for LD 30-1 on subcarrier 20-1, the mounting surface P2 for LD 30-2 on subcarrier 20-2, and the mounting surface P3 for LD 30-3 on subcarrier 20-3 are rotated with respect to the optical waveguide surface, and that the subcarrier 20 and the substrate 40 are connected via the first metal layer 91. It is also preferable that the mounting surface P for LD 30 on subcarrier 20 is rotated 90° or approximately 90° with respect to the optical waveguide surface, and that the subcarrier 20 and the substrate 40 are connected via the first metal layer 91.

[0036] As shown in FIG. 4, subcarrier 20 is connected to substrate 40 via, for example, third metal layer 93 (metal layer) and anti-reflection film 81. Third metal layer 93 has metal layers 71, 72, and 73. Metal layer 71 contacts side surface 22 of subcarrier 20 facing substrate 40. Metal layer 72 contacts side surface 42 of substrate 40 facing subcarrier 20 via anti-reflection film 81. Metal layer 73 is provided between metal layers 71 and 72 in the y direction. The melting point of metal layer 73 is preferably lower than that of metal layer 75.

[0037] The metal layer 71 is provided over substantially the entire area of ​​the side surface 22, without contacting the metal layer 75. When viewed along the y direction, the metal layers 72 and 73 are formed to be larger than the subcarrier 20. The front ends of the metal layers 72 and 73 in the z direction, i.e., the upper ends of the metal layers 72 and 73, are located at substantially the same position as the front end of the metal layer 71 in the z direction, i.e., the upper end of the metal layer 71. The rear end of the metal layer 72 in the z direction, i.e., the lower end, is located further back in the z direction than the rear end of the metal layer 71 in the z direction, i.e., the lower end of the metal layer 71. The rear end of the metal layer 73 in the z direction, i.e., the lower end, is located further back in the z direction than the rear end of the metal layer 72 in the z direction. The rear end of the metal layer 73 in the z direction is located further forward in the z direction than the rear end of the anti-reflection film 81 in the z direction, i.e., the lower end of the anti-reflection film 81.

[0038] The area of ​​metal layer 71, i.e., the size of metal layer 71 in a plane including the x and z directions, is preferably approximately the same as the area of ​​metal layers 72 and 73, i.e., the size of metal layer 71 in a plane including the x and z directions, or is smaller than the area of ​​metal layers 72 and 73. In the above-described configuration, the connection strength of subcarrier 20 to substrate 40 is maximized.

[0039] The metal layer 71 is provided by sputtering, vapor deposition, or the like in contact with the side surface 22, and is made of one or more metals selected from the group consisting of gold (Au), platinum (Pt), silver (Ag), lead (Pb), indium (In), nickel (Ni), titanium (Ti), and tantalum (Ta). The metal layer 71 is preferably made of any metal selected from the group consisting of gold (Au), platinum (Pt), silver (Ag), lead (Pb), indium (In), and nickel (Ni).

[0040] The metal layer 72 is provided by sputtering, vapor deposition, or the like in contact with the side surface 42, and is made of one or more metals selected from the group consisting of titanium (Ti), tantalum (Ta), and tungsten (W). The metal layer 72 is preferably made of tantalum (Ta).

[0041] The metal layer 73 is made of, for example, one or more alloys selected from the group consisting of AuSn, SnCu, InBi, SnAgCu, SnPdAg, SnBiIn, and PbBiIn. The metal layer 73 is preferably made of any alloy selected from the group consisting of AuSn, SnAgCu, and SnBiIn.

[0042] By connecting the subcarrier 20 and the substrate 40 via the third metal layer 93 and the anti-reflection film 81 as described above, a gap space 101 is formed between the exit surface 31 of the LD 30 and the incident surface 61 of the core 51 into which the red light (light), green light (light), and blue light (light) are incident in the PLC 50. The exit surface 31-1 of the LD 30-1 faces the incident surface 61-1 of the core 51-1. Although not shown, the exit surface 31-2 of the LD 30-2 faces the incident surface 61-2 of the core 51-2. The exit surface 31-3 of the LD 30-3 faces the incident surface 61-3 of the core 51-3.

[0043] The PLC 50 is disposed so that light emitted from the exit surface 31 of the LD 30 can enter the core 51. The axis JX-1 of the core 51-1 substantially overlaps with the optical axis AXR of the red light LR emitted from the exit surface 31-1 of the LD 30-1. Although not shown, the axis JX-2 of the core 51-2 overlaps with the optical axis AXG of the green light LG emitted from the exit surface 31-2 of the LD 30-2. The axis JX-3 of the core 51-3 overlaps with the optical axis AXB of the blue light LB emitted from the exit surface 31-3 of the LD 30-3.

[0044] The distance in the y direction between the exit surface 31 of the LD 30 and the incident surface 61 of the core 51 of the PLC 50 is set appropriately, for example, to about 0 to 5 μm, so that the light emitted from the exit surface 31 of the LD 30 enters the core 51 with a predetermined amount of light, as described above. For example, in an integrated optical device 10 used in a head-mounted display, the distance in the y direction between the exit surface 31 of the LD 30 and the incident surface 61 of the core 51 of the PLC 50 is greater than 0 μm and equal to or less than 5 μm.

[0045] In the y direction, the exit surface 31 of the LD 30 and the side surface 22 of the subcarrier 20 facing the PLC 50 in the y direction may be arranged on approximately the same plane. For example, in the y direction, the exit surface 31 of the LD 30 and the side surface 22 of the subcarrier 20 are at approximately the same position and form approximately the same plane. "Approximately the same" means that the deviation in the y direction between the exit surface 31 of the LD 30 and the side surface 22 of the subcarrier 20 is optically negligible.

[0046] 5, the cores 51-1, 51-2, and 51-3 are gathered together in the y direction behind the position in the y direction where they reach the exit surface 64 of the PLC 50. The cores 51-1, 51-2, and 51-3 gradually approach each other as they move forward in the y direction, and merge into one core 51-4. To prevent light leakage from the cores 51-1, 51-2, and 51-3, it is preferable that the cores 51-1, 51-2, and 51-3 are each connected to the core 51-4 with a curvature radius that is equal to or greater than a predetermined radius of curvature.

[0047] The red light, green light, and blue light emitted from LDs 30-1, 30-2, and 30-3 enter cores 51-1, 51-2, and 51-3, respectively, and then propagate within each core. The red light and green light propagating through cores 51-1 and 51-2 join at joining position 57-1 and propagate within core 51-7, where cores 51-1 and 51-2 join. The red light, green light, and blue light propagating through cores 51-3 and 51-7 join at joining position 57-2, where cores 51-3 and 51-7 join and enter core 51-4. Joining position 57-2 is located forward of joining position 57-1 in the y direction. The three-color light obtained by combining the red light, green light, and blue light at the joining position 57-2 propagates through the core 51-4 and reaches the exit surface 64. The three-color light emitted from the exit surface 64 is used as, for example, signal light depending on the intended use of the integrated optical device 10.

[0048] 6 and 7, integrated optical module 100 of this embodiment is a module in which integrated optical device 10 described above is housed in package 110. Integrated optical module 100 includes integrated optical device 10 and package 110. Package 110 includes main body 102 having a cavity structure and cover 105 that covers main body 102.

[0049] The main body 102 has a box-shaped housing portion 107 that houses the integrated optical device 10, and an electrode portion 108 adjacent to the housing portion 107. The main body 102 is made of, for example, ceramic. An opening is formed in the top surface of the housing portion 107. A metal film 112 made of Kovar or the like is formed on the top surface of the housing portion 107 around the periphery of the opening when viewed from above. The cover 105 tightly covers the opening formed in the top surface of the housing portion 107 via the metal film 112. When the housing portion 107 is hermetically sealed with the cover 105, an inert gas such as nitrogen (N2) is sealed in the internal space of the housing portion 107. In other words, the housing portion 107 is hermetically sealed by the cover 105. The internal space of the housing portion 107 is filled with the inert gas.

[0050] The electrode unit 108 is disposed rearward in the y direction of the housing unit 107, i.e., on the near side in the y direction. The front surface of the electrode unit 108 in the z direction, i.e., the top surface, is located rearward in the z direction, i.e., lower than the front surface of the housing unit 107 in the z direction, i.e., the top surface. The bottom surface of the electrode unit 108 is located at approximately the same height as the bottom surface of the housing unit 107. A plurality of external electrode pads 210 are provided on the top surface of the electrode unit 108 at intervals in the x direction.

[0051] 8 and 9, a base 180 for installing integrated optical device 10 is provided at a predetermined position on bottom wall portion 131 of housing portion 107. In other words, integrated optical device 10 is disposed in the internal space of housing portion 107.

[0052] As shown in FIG. 8, a plurality of internal electrode pads 202 are provided at intervals in the x direction on the upper surface of the bottom wall portion 131 between the base 180 below the subcarrier 20 and the external electrode pads 210 in the y direction.

[0053] Each of the internal electrode pads 202-1, 202-2, and 202-3 is connected to a different external electrode pad 210. As described above, the external electrode pads 210 electrically connected to each of the internal electrode pads 202-1, 202-2, and 202-3 are electrically connected to a power supply (not shown) or the like. That is, in the integrated optical module 100, the LD 30 is connected to a power supply (not shown) by wires 95, the internal electrode pads 202-1, 202-2, and 202-3, and the external electrode pads 210. When power is supplied from a power supply (not shown) to the external electrode pads 210 corresponding to each of the internal electrode pads 202-1, 202-2, and 202-3, red light, green light, and blue light are emitted from the LDs 30-1, 30-2, and 30-3.

[0054] As shown in FIG. 9, the integrated optical device 10 is fixed to the base 180 of the package 110 via the second metal layer 92. The second metal layer 92 includes metal layers 171, 172, and 173. In FIG. 9, the metal layers 71, 72, and 73 of the third metal layer 93 of the integrated optical device 10 are collectively referred to as the third metal layer 93. The rear or front surfaces of the subcarrier 20, the substrate 40, the third metal layer 93, and the anti-reflection films 81 and 82 in the z direction may be substantially flush with one another. The metal layer 171 contacts the bottom surfaces of the subcarrier 20 and the substrate 40. The metal layer 172 contacts the top surface of the base 180, i.e., the front and rear surface in the z direction. The metal layer 173 is disposed between the metal layers 171 and 172 in the z direction. The metals and alloys constituting each of the metal layers 171, 172, and 173 may be the same as the metals and alloys constituting each of the metal layers 71, 72, and 73, or may be selected from the groups described for the metal layers 71, 72, and 73.

[0055] An opening 133 is formed in the sidewall 132 of the housing 107, in the sidewall 132 facing the exit surface 31 of the PLC 50 of the integrated optical device 10. The opening 133 is formed approximately at a position where the sidewall 132 intersects with the optical axes of the three-color light emitted from the core 51-4 of the PLC 50. The opening 133 is larger than the size, on the surface of the sidewall 132, of the three-color light emitted from the core 51-4 and spreading in the internal space of the housing 107. As shown in FIGS. 10 and 11 , the opening 133 is tightly covered by a glass plate 220 from the outside of the sidewall 132-1. In other words, the housing 107 is hermetically sealed by the glass plate 220 in addition to the cover 105. An anti-reflection film (not shown) is provided on both surfaces of the glass plate 220. The opening 133 is a window through which the three-color light emitted from the core 51-4 of the PLC 50 passes and exits to the outside of the package 110.

[0056] The three-color light LL emitted from the core 51-4 of the PLC 50 of the integrated optical device 10 is diffused mainly in the y direction, passes through the opening 133 and the glass plate 220, and is emitted to the outside of the package 110, traveling toward the rear in the y direction, i.e., forward in the y direction, as shown in FIG. 11 . For example, a collimating device 300 including a collimating lens 310 can be disposed forward in the y direction, i.e., toward the rear, of the sidewall portion 132-1 of the package 110. By adjusting the distance between the exit surface 31 and the collimating lens 310 in the y direction to the focal length of the collimating lens 310 and aligning the center of the collimating lens 310 on the optical axis of the three-color light LL, the three-color light LL emitted from the core 51-4 of the PLC 50 of the integrated optical device 10 is collimated into parallel light. Note that although FIG. 11 shows the collimating device 300 disposed outside the package 110, the collimating lens 310 may be housed inside the package 110. If the glass plate 220 can hermetically seal the opening 133, a collimator lens 310 may be formed in the region through which the three-color light emitted from the PLC 50 passes via the glass plate 220.

[0057] Next, a method for manufacturing the integrated optical device 10 will be briefly described.

[0058] First, as shown in Fig. 12, a bare-chip LD 30 is mounted by a known method on the upper surface 23 of a subcarrier 20 having a low-profile structure. For example, a metal layer 75 is formed on the upper surface 23 of the subcarrier 20 by sputtering, vapor deposition, or the like, and then a metal layer 76 is formed on the lower surface 34 of the LD 30 (e.g., the lower surface 34-1 of LD 30-1) by sputtering, vapor deposition, or the like. After a metal layer is formed on the upper surface 23 of the subcarrier 20 by sputtering, vapor deposition, or the like, a metal layer 75 may be formed on the metal layer by sputtering, vapor deposition, or the like.

[0059] Next, for example, laser light from laser 90 is irradiated onto subcarrier 20. The laser light irradiation heats only subcarrier 20 to a degree that does not melt or deform it, and metal layers 75 and 76 are softened or melted by heat transfer from subcarrier 20, forming first metal layer 91, which is then cooled. Through these operations, LD 30 is bonded to top surface 23 of subcarrier 20 via metal layers 75 and 76. Thereafter, metal layer 71 is formed on side surface 22 of subcarrier 20 by sputtering, vapor deposition, or the like.

[0060] PLC 50 is formed on upper surface 41 of substrate 40 by a known semiconductor process. Next, antireflection films 81 and 82 and an antireflection film (not shown) are formed on incident surface 61 and exit surface 64. Thereafter, metal layers 72 and 73 are formed in this order behind antireflection film 81 in the y direction by sputtering, vapor deposition, or the like.

[0061] 13, the emission surfaces 31-1, 31-2, and 31-3 of the corresponding LDs 30-1, 30-2, and 30-3 and the incidence surfaces 61-1, 61-2, and 61-3 of the cores 51-1, 51-2, and 51-3 are overlapped with each other in the x and z directions and are opposed to each other with a predetermined gap in the y direction. The optical axis of each color light emitted from the LD 30 is approximately overlapped with the axis of the incidence surface 61 of the corresponding core.

[0062] Next, the subcarrier 20 and the substrate 40 are connected in a state where the mounting surface of the subcarrier 20 for the LD 30 is rotated with respect to the optical waveguide surface. That is, the subcarrier 20 and the substrate 40 are connected in a state where the top surface 23 of the subcarrier 20 on which the LD 30 is mounted forms a predetermined angle with respect to the optical waveguide surface when viewed along the y direction. Laser light from the laser 90 is irradiated onto the subcarrier 20, and the metal layers 71, 72, and 73 are softened or melted by heat transfer from the subcarrier 20, forming a third metal layer 93. Then, while adjusting the relative positions of the LD 30 and the PLC 50, the subcarrier 20 on which the LD 30 is mounted is joined to the substrate 40 on which the PLC 50 is formed.

[0063] When joining the subcarrier 20 and the substrate 40 described above, it is preferable to connect the subcarrier 20 and the substrate 40 in a state where the mounting surface P1 for LD 30-1 on the subcarrier 20-1, the mounting surface P2 for LD 30-2 on the subcarrier 20-2, and the mounting surface P3 for LD 30-3 on the subcarrier 20-3 are rotated relative to the optical waveguide surface. It is also preferable to connect the subcarrier 20 and the substrate 40 in a state where the mounting surface P for LD 30 on the subcarrier 20 is rotated 90° or approximately 90° relative to the optical waveguide surface.

[0064] Furthermore, when joining the subcarrier 20 and the substrate 40 described above, for example, lasers 90 are placed on both sides of the subcarrier 20 in the z direction, as shown in Fig. 14. Light emitted from the lasers 90 is directed at the subcarrier 20 in the direction shown by the arrows in Fig. 14 to heat it, heating only the subcarrier 20 to a degree that does not melt or deform it. At the same time, each color of light is emitted from the LD 30, and the emission intensities are detected, as well as the emission intensities of the three color lights emitted from the core 51-4 of the PLC 50.

[0065] In this way, the LD 30 is attached to the side surface 21 of the subcarrier 20 by connecting the subcarrier 20 and the substrate 40 in a state where the top surface 23 of the subcarrier 20 on which the LD 30 is mounted is rotated relative to the optical waveguide surface.

[0066] As shown in Figure 15, when the distance S between the exit surface 31 and the entrance surface 61 in the y direction is changed by a value on the order of microns and the light utilization efficiency [%] is the ratio of the emission intensity to the emission intensity, the light utilization efficiency decreases as the distance S increases. a b c d e f g The optimum spacing S varies depending on the intended use of the integrated optical device 10, the light emission pattern of the LD 30, and the dimensions of the cores 51-1, 51-2, and 51-3 in the x and z directions. Taking these conditions into consideration, the spacing S and the position and attitude of the LD 30 are adjusted to achieve the desired light utilization efficiency. The adjustment of the position and attitude of the LD 30 described above means performing so-called active alignment and gap control. The adjustment of the spacing S and the LD 30 described above can be performed using a known device with an active alignment function.

[0067] By performing active alignment, gap control, and heating of the subcarrier 20, as shown in Figure 14, the metal layers 71, 72, and 73 between the exit surface 31 and entrance surface 61 of the LD 30 placed at the optimal position become thinner than the metal layers not sandwiched between the exit surface 31 of the LD 30 and the entrance surface 61 of the core 51 due to alloying of the metal layer 73 and slight thermal contraction. By stopping the heating of the subcarrier 20 by the laser 90, it is cooled and the position of the LD 30 is fixed. By proceeding with the above procedures, the integrated optical device 10 can be manufactured.

[0068] ​​​​​​As described above, according to this embodiment, the subcarrier 20 has a low-profile structure, the PLC 50 has multiple cores corresponding to multiple LDs 30, and the multiple cores are arranged on approximately the same plane to form an optical waveguide surface. The subcarrier 20 and the substrate 40 are connected in a state in which the mounting surface P of the LDs 30 on the subcarrier 20 is rotated with respect to the optical waveguide surface. Therefore, when arranging multiple subcarriers 20 in the x direction, the spacing (arrangement pitch) between adjacent subcarriers 20 or adjacent LDs 30 can be reduced, thereby achieving further miniaturization of the integrated optical device 10. The subcarrier 20 and the LDs 30 are connected via the first metal layer 91, which includes metal layers 75 and 76. This prevents remelting of metal layer 75, which would cause a relative positional deviation between LD 30 and subcarrier 20, when metal layers 71, 72, and 73 are melted or softened to bond subcarrier 20 to substrate 40 after metal layers 75 and 76 are melted or softened to bond LD 30 and subcarrier 20 during the manufacture of integrated optical device 10. Preventing a relative positional deviation between LD 30 and subcarrier 20 improves the positional accuracy between LD 30 and PLC 50, which are connected via subcarrier 20, and makes it possible to provide a highly reliable integrated optical device 10.

[0069] In addition, the radiation angle of a typical semiconductor laser is horizontally θ h than the vertical direction θ vis larger, and the laser spot has a substantially elliptical shape with the major axis in the vertical direction and the minor axis in the horizontal direction. High-efficiency coupling is possible by shaping the core 51 of the PLC 50 to match the shape of the laser spot. However, expanding the shape of the core 51 in the vertical direction during the semiconductor process for manufacturing the PLC 50 is undesirable from the standpoints of quality and manufacturing efficiency. On the other hand, according to the present invention, the subcarrier 20 and the substrate 40 are connected with the mounting surface P of the LD 30 rotated 90° or approximately 90° relative to the optical waveguide surface. Therefore, by rotating the laser spot 90°, for example, the core 51 can be formed into a substantially elliptical shape with the minor axis in the vertical direction and the major axis in the horizontal direction. Therefore, during the semiconductor process for manufacturing the PLC 50, the core 51 can be formed into a substantially rectangular shape with the minor axis in the vertical direction and the major axis in the horizontal direction, easily achieving high coupling efficiency without degrading quality or manufacturing efficiency.

[0070] The bond between the subcarrier 20 and the LD 30 by the alloyed metal layers 75, 76 is heat-resistant and is not easily broken even when the ambient temperature rises during processes such as wire bonding, as shown in FIG. 16 . For example, when the LD 30 is connected to a power supply (not shown) on the top surface 24 of the subcarrier 20 by wire 95 using a method such as wire bonding, the bond between the subcarrier 20 and the LD 30 is maintained in a good condition. In other words, the LD 30 and the subcarrier 20 do not separate during wire bonding, and the LD 30 is maintained in an optimal position on the subcarrier 20. This allows the integrated optical device 10 to exhibit the desired light utilization efficiency and optical characteristics, thereby improving the reliability of the integrated optical device 10.

[0071] In the integrated optical device 10, a gap space 101 is formed between the exit surface 31 of the LD 30 and the entrance surface 61 of the PLC 50, onto which each color light is incident. The integrated optical device 10 is configured such that each color light emitted from the exit surface 31 of the LD 30 propagates through the gap space 101 along the y direction and enters the core 51 of the PLC 50 from the entrance surface 61. With the above-described configuration, it is easy to cause each color light emitted from the exit surface 31 of the LD 30 to enter the core 51 of the PLC 50 while satisfying a predetermined coupling efficiency, and a highly reliable integrated optical device 10 can be provided.

[0072] In the integrated optical module 100 according to this embodiment, the integrated optical device 10 described above is housed in a package 110. In the integrated optical module 100, the integrated optical device 10 is fixed inside the package 110 via a second metal layer 92. The integrated optical module 100 includes the integrated optical device 10, and the output surface 31 of the LD 30 and the side surface 22 of the subcarrier 20 are located at substantially the same position in the y direction, thereby improving reliability. The integrated optical module 100 can provide three-color light with the desired light intensity suited to the intended use with high reliability.

[0073] Although the preferred embodiments of the present invention have been described in detail above, the present invention is not limited to such specific embodiments, and various modifications are possible within the scope of the gist of the present invention as described in the claims.

[0074] As shown in FIG. 17 , in the integrated optical device 10, a resin 98 or any material other than resin may be provided between the exit surface 31 of the LD 30 and the incident surface 61 of the core 51 of the PLC 50. However, the resin 98 and the aforementioned optional material can transmit the light emitted from the LD 20. To improve the light coupling efficiency to the core 51 of the PLC 50, the resin 98 and the aforementioned optional material preferably have a high total light transmittance for the light emitted from the LD 20, for example, 80% or more. When the resin 98 is provided between the exit surface 31 of the LD 30 and the incident surface 61 of the core 51 of the PLC 50, each color light is emitted from the exit surface 31 of the LD 30, enters the resin 98, propagates through the resin 98, and enters the core 51 of the PLC 50 from the incident surface 61. By appropriately setting the refractive index of the resin 98 and the aforementioned optional material, the anti-reflection coating 81 can be omitted. In the integrated optical device of the above-described modified example, the emission surface 31 of the LD 30 and the side surface 22 of the subcarrier 20 are arranged on approximately the same plane, so that the same effects as those of the integrated optical device 10 can be obtained.

[0075] 9, the integrated optical device 10 may be fixed to the base 180 inside the package 110 via a second resin layer (not shown) instead of the second metal layer 92. The second metal layer 92 may be made of, for example, epoxy resin. In the integrated optical device of the above-described modified example, the emission surface 31 of the LD 30 and the side surface 22 of the subcarrier 20 are arranged on approximately the same plane, so that the same effects as those of the integrated optical device 10 can be obtained.

[0076] For example, in integrated optical device 10, first metal layer 91 may be composed of one metal layer, or may be composed of three or more different metal layers. By providing a new metal layer between subcarrier 20 and metal layer 75, the reliability of integrated optical device 10 can be improved compared to a case where a new metal layer is not provided. The new metal layer may be composed of one or more metals selected from the group consisting of titanium (Ti), tantalum (Ta), and tungsten (W), for example.

[0077] For example, in the integrated optical device 10, the subcarrier 20 and the LD 30 may be connected via a metal composite layer (not shown) including an alloy layer with at least the metal layers 75 and 76. The phrase "a metal composite layer including at least the alloy layer of the first metal layer 91 with the metal layers 75 and 76" refers to a layer having an alloy layer with the metal layers 75 and 76 in a portion of the metal composite layer, or a layer entirely composed of the alloy layer. For example, in the integrated optical device 10, the metals of the metal layers 75 and 76 may be alloyed over a portion or the entire z-direction to form an alloy layer. When the metals of the metal layers 75 and 76 are alloyed over a portion of the z-direction, the alloy layer of the metal layers 75 and 76 and / or the metal layers 75 and 76 are interposed between the subcarrier 20 and the LD 30. The compositions of the interposed metal and alloy layers may vary depending on the heating conditions of the subcarrier 20 during the manufacturing method of the integrated optical device 10 described above. When the metals of the metal layers 75 and 76 are alloyed throughout the entire z-direction, substantially only the alloy layer may be present between the subcarrier 20 and the LD. In other words, the term "metal layer" broadly encompasses a layer made of a single metal, a layer containing multiple metals, and an alloy layer made of multiple metals.

[0078] For example, in the integrated optical device 10, it is preferable that the metal layers 75, 76 of the first metal layer 91 are alloyed over the entire y-direction of the metal layer 76 at the interface between them, forming an alloy layer with the metal layers 75, 76. However, the metal layers 75, 76 may be alloyed over a portion of the metal layer 76 in the y-direction, forming the alloy layer.

[0079] For example, in the integrated optical device 10, the subcarrier 20 and the substrate 40 may be connected via another metal composite layer (not shown) including at least an alloy layer with the metal layers 71 and 73 and / or an alloy layer with the metal layers 72 and 73. The phrase "another metal composite layer including at least an alloy layer with the metal layers 71 and 73 and / or an alloy layer with the metal layers 72 and 73" refers to a layer that partially includes an alloy layer between the metal of the metal layer 71 and the metal layer 73 and / or an alloy layer between the metal layers 72 and 73, or that is entirely composed of an alloy layer between the metal of the metal layer 71 and the metal layer 73 and an alloy layer between the metal of the metal layer 72 and the metal layer 73. For example, in the integrated optical device 10, the metal of the metal layer 71 and the metal layer 73 may be alloyed over a portion or the entirety of the y direction to form a single alloy layer. The metal of the metal layer 72 and the metal layer 73 may be alloyed over a portion or the entirety of the y direction to form a single alloy layer. The subcarrier 20 and the substrate 40 may be connected via either or both of an alloy layer with the metal layers 71 and 73 and an alloy layer with the metal layers 72 and 73 .

[0080] The melting point of the metal composite layer including the alloy layer of metal layers 75 and 76 of first metal layer 91 is preferably higher than the melting points of the other metal composite layers including the alloy layers of metal layers 71 and 73 and the alloy layers of metal layers 72 and 73. For example, the melting point of the alloy constituting the alloy layer between the metal constituting metal layer 75 and the metal constituting metal layer 76 is preferably higher than the melting point of the alloy constituting the alloy layer between the metal constituting metal layer 71 and the metal constituting metal layer 73. The melting point of the alloy constituting the alloy layer between the metal constituting metal layer 75 and the metal constituting metal layer 76 of first metal layer 91 is preferably higher than the melting point of the alloy constituting the alloy layer between the metal constituting metal layer 72 and the metal constituting metal layer 73. In each of the above-described configurations, when metal layers 71, 72, and 73 are melted or softened to bond subcarrier 20 to substrate 40 during the manufacturing process of integrated optical device 10, the alloy layers of metal layers 75 and 76 can be prevented from remelting, thereby preventing relative positional misalignment between LD 30 and subcarrier 20. The metal composite layer may be any of a single alloy layer, a combination of a metal layer and an alloy layer, a combination of alloy layers of different compositions, and a multilayer structure different from the above combinations and including at least an alloy layer.

[0081] By considering the melting point conditions of first metal layer 91 and metal layers 71, 72, and 73 as described above, it is possible to provide an integrated optical device 10 that has high positional accuracy between LD 30 and PLC 50 connected via subcarrier 20 and is highly reliable. The melting point of the alloy layer formed at or near the interface of each metal layer depends on the melting point of metal layer 75 or metal layer 73. For example, by forming metal layer 75 thicker than metal layer 76, or by forming metal layer 73 thicker than metal layers 71 and 72, the melting point of the alloy layer formed at or near the interface of each metal layer can be easily controlled.

[0082] The metal material interposed between the subcarrier 20 and the substrate 40 to join them can be changed as appropriate depending on the materials of the subcarrier 20, the substrate 40, and the metal layer 71. The thickness of the metal material of the metal layer or alloy layer can be set as appropriate depending on the materials of the subcarrier 20, the substrate 40, and the metal layer 71.

[0083] In the integrated optical device 10, the first metal layer 91 includes two metal layers 75 and 76, but may include, for example, only one metal layer 75 or only one metal layer 76. In the integrated optical device 10, the subcarrier 20 and the substrate 40 are connected via the metal layers 71, 72, and 73 and the anti-reflection film 81, but may be connected via only one metal layer.

[0084] In the integrated optical device 10, the side surface 22 of the subcarrier 20 and the side surface 42 of the substrate 40 are connected via the metal layer 71, the metal layer 72, the metal layer 73, and the anti-reflection film 81, in that order, from rear to front in the y direction. However, the configuration between the side surface 22 of the subcarrier 20 and the side surface 42 of the substrate 40 is not limited to the laminated structure of the metal layers 71, 72, and 73 and the anti-reflection film 81. The lower surface of the subcarrier 20 facing the substrate 40 and the upper surface of the substrate 40 facing the subcarrier 20 may be connected via the metal layers 71, 72, and 73. In this case, it is preferable that the melting point of the metal layer 75 be higher than the melting point of the metal layer 73. In the integrated optical device of the above-described modified example, the emission surface 31 of the LD 30 and the side surface 22 of the subcarrier 20 are arranged on approximately the same plane, so that the same effects as those of the integrated optical device 10 can be obtained.

[0085] In the above-described modification, the subcarrier 20 and the substrate 40 may be connected via another metal composite layer (not shown) including at least an alloy layer between the metal of the metal layer 71 and the metal layer 73 and / or an alloy layer between the metal of the metal layer 72 and the metal layer 73. In this case, as in the above-described modification, it is preferable that the melting point of the metal layer 75 is higher than the melting point of the other metal composite layer including the alloy layer between the metal of the metal layer 71 and the metal layer 73 and / or the alloy layer between the metal layer 72 and the metal layer 73.

[0086] The applications of the integrated optical device 10 described above are not limited to wearable devices, compact projectors, and the like. However, the wavelengths of light processed by the integrated optical device of the present invention are not limited to red, green, and blue, nor are they limited to the visible wavelength range. The wavelength range of light processed by the integrated optical device of the present invention may range from the visible wavelength range to the near-infrared wavelength range, or may be limited to the near-infrared wavelength range for use in optical communications. The number of wavelengths of light processed by the integrated optical device of the present invention is not limited to three and can be set to any desired number. Materials for the substrate 40, the PLC 50, and the various metal and alloy layers can be appropriately selected depending on the wavelengths of light processed by the integrated optical device of the present invention.

[0087] The configuration of the integrated optical module 100 described above is not limited to the configuration described with reference to Figures 6 to 11. Optical elements other than the collimating lens 310, such as an imaging lens, a beam splitter, a wavelength filter, a multifunction optical filter, or a photodetector, can be freely accommodated in the accommodation section 107 of the package 110 depending on the application of the integrated optical module 100 and the shape of the core 51 in the PLC 50. The optical elements described above may be installed outside the accommodation section 107 of the package 110, as in the case of the collimating device 300 shown in Figure 11. The integrated optical module 100 may be integrated into any optical processing device. [Explanation of symbols]

[0088] 10 Integrated optical devices 20 Subcarrier (base) 20-1 Subcarrier (base) 20-2 Subcarrier (base) 20-3 Subcarrier (base) 21 Side 21-1 Side 21-2 Side 21-3 Side 22 Side 22-1 Side 22-2 Side 22-3 Side 23 Top side 23-1 Top surface 24 Top side 30 LD (optical semiconductor element) 30-1 LD (optical semiconductor element) 30-2 LD (optical semiconductor element) 30-3 LD (optical semiconductor element) 31 Exit surface 31-1 Exit surface 31-2 Exit surface 31-3 Exit surface 33 Side 34 Bottom surface 34-1 Bottom surface 40 boards 41 Top surface (front surface) 42 Side 50 PLC (optical waveguide) 51 cores 51-1 Core 51-2 Core 51-3 Core 61 Entrance plane 61-1 Incidence plane 61-2 Incidence plane 61-3 Incidence plane 64 Exit Surface 71 Metal layer 72 Metal layer 73 Metal layer 91 First metal layer (metal layer) 92 Second metal layer 93 Third metal layer (metal layer) 96 Second resin layer 98 Resin 99 1st resin layer 100 Integrated Optical Module 101 Interstitial Space

Claims

1. A plurality of bases; a plurality of optical semiconductor elements provided on the plurality of bases; A substrate; an optical waveguide provided on the substrate and arranged to allow light emitted from the plurality of optical semiconductor elements to be incident thereon; Equipped with the base has a low-profile structure in which the length in the x direction is smaller than both the length in the y direction and the length in the z direction, where the arrangement direction of the plurality of bases is defined as an x ​​direction, the emission direction of light emitted from the optical semiconductor element is defined as a y direction, and the direction perpendicular to the x direction and the y direction is defined as a z direction; the optical semiconductor element is connected to the base via a metal layer, the optical waveguide has a plurality of cores corresponding to the plurality of optical semiconductor elements, and the plurality of cores are arranged on substantially the same plane to form an optical waveguide surface; an integrated optical device in which the mounting surface of the optical semiconductor element on the base is perpendicular to the emission surface from which the light is emitted from the optical semiconductor element and rotated 90° with respect to the optical waveguide surface, and the base and the substrate are connected via another metal layer provided in contact with the opposing sides of the base and the substrate.

2. 2. The integrated optical device according to claim 1, wherein the optical semiconductor element has a low-profile structure in which the length in the x direction is smaller than both the length in the y direction and the length in the z direction, where the arrangement direction of the plurality of optical semiconductor elements is the x direction, the emission direction of light emitted from the optical semiconductor elements is the y direction, and the direction perpendicular to the x direction and the y direction is the z direction.

3. 3. The integrated optical device according to claim 1, wherein the base and the substrate are connected in a state where the mounting surface is rotated 90 degrees relative to the optical waveguide surface about the optical axis of the optical semiconductor element.

4. the plurality of cores of the optical waveguide are formed in a rectangular shape with short sides in the vertical direction and long sides in the horizontal direction, 4. The integrated optical device according to claim 1, wherein the laser spots of the light emitted from the plurality of optical semiconductor elements have an elliptical shape with a minor axis in the vertical direction and a major axis in the horizontal direction.

5. the plurality of optical semiconductor elements are three or more optical semiconductor elements, the plurality of bases are three or more bases on which the three or more optical semiconductor elements are mounted, 2. The integrated optical device according to claim 1, wherein the three or more optical semiconductor elements are arranged side by side and optically coupled to the optical waveguide.

6. the three or more optical semiconductor elements are three optical semiconductor elements that emit red light, green light, and blue light, 6. The integrated optical device according to claim 5, wherein the three or more bases are three bases on which the three optical semiconductor elements are mounted.

7. a gap space is formed between an emission surface from which the light is emitted from the optical semiconductor element and an incidence surface into which the light is incident in the optical waveguide; The light is configured to be emitted from the exit surface, propagate through the gap space, and enter the core of the optical waveguide from the entrance surface.

7. An integrated optical device according to any one of claims 1 to 6.

8. a resin is provided between an emission surface from which the light is emitted from the optical semiconductor element and an incidence surface into which the light is incident in the optical waveguide; the light is configured to be emitted from the emission surface, propagate through the resin, and enter the core of the optical waveguide from the incidence surface; 7. An integrated optical device according to any one of claims 1 to 6.

9. The integrated optical device according to any one of claims 1 to 8 is housed in a package, the integrated optical device is fixed in the package via either a second metal layer or a second resin layer. Integrated optical module.

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