Substrate processing method and substrate processing apparatus

Abstract

To provide a substrate processing method and a substrate processing apparatus which can reduce a burden on a worker.SOLUTION: A substrate processing method comprises the steps of: discharging preceding processing liquid from a discharge port 41a of a preceding nozzle (41) toward a held substrate W by starting supply of the preceding processing liquid to the preceding nozzle 41 (step S12); starting supply of the succeeding processing liquid to the succeeding nozzle 42 (step S14); discharging succeeding processing liquid from a discharge port 42a of a succeeding nozzle 42 toward the held substrate W (step S15); detecting the discharge start of the succeeding processing liquid from the discharge port 42a of the succeeding nozzle 42 (step S15); and stopping supply of the preceding processing liquid to the preceding nozzle 41 according to the detection of the discharge start of the succeeding processing liquid (step S16).SELECTED DRAWING: Figure 8

Description

[Technical Field]

[0001] The present invention relates to a substrate processing method and a substrate processing apparatus. [Background technology]

[0002] A single-wafer type substrate processing apparatus is known that processes substrates by discharging a processing liquid onto the substrate. In the single-wafer type substrate processing apparatus, the substrates are processed one by one with the processing liquid. For example, Patent Document 1 discloses a single-wafer type substrate processing apparatus.

[0003] The substrate processing apparatus of Patent Document 1 includes an organic solvent valve that opens and closes an organic solvent pipe and a hydrophobizing agent valve that opens and closes a hydrophobizing agent pipe. After a delay time has elapsed since the organic solvent valve began closing, the hydrophobizing agent valve begins opening while the discharge of IPA (isopropyl alcohol) from the organic solvent nozzle has not yet completely stopped. As a result, substrate processing can be transitioned from organic solvent processing to hydrophobizing agent processing without causing liquid shortage on the substrate, while suppressing or preventing splashing due to interference between the organic solvent and the hydrophobizing agent. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Japanese Patent Application Laid-Open No. 2019-192799 Summary of the Invention [Problem to be solved by the invention]

[0005] However, in the substrate processing apparatus of Patent Document 1, an operator must set the period (delay time) from when the closing operation of the organic solvent valve (leading valve) begins until the opening operation of the hydrophobizing agent valve (following valve) begins. Therefore, for example, the operator must set the delay time every time the discharge flow rate of the processing liquid fluctuates. The discharge flow rate of the processing liquid fluctuates due to, for example, fluctuations in the power usage of the factory in which the substrate processing apparatus is installed. Thus, in the substrate processing apparatus of Patent Document 1, the operator must set the delay time even after the substrate processing apparatus is installed. Therefore, considering the burden on the operator, there is room for further improvement.

[0006] The present invention has been made in view of the above-mentioned problems, and an object of the present invention is to provide a substrate processing method and a substrate processing apparatus that can reduce the burden on an operator. [Means for solving the problem]

[0007] According to one aspect of the present invention, a substrate processing method is a substrate processing method for processing a substrate with a processing liquid, and includes a step of holding the substrate; a step of starting the supply of a preceding processing liquid to a leading nozzle and ejecting the preceding processing liquid from an outlet of the leading nozzle toward the held substrate; a step of starting the supply of a trailing processing liquid to a trailing nozzle and ejecting the trailing processing liquid from the outlet of the trailing nozzle toward the held substrate; a detection step of detecting the start of ejection of the trailing processing liquid from the outlet of the trailing nozzle; and a stop step of stopping the supply of the preceding processing liquid to the leading nozzle in response to detection of the start of ejection of the trailing processing liquid.

[0008] In one embodiment, the detecting step detects that the subsequent processing liquid has been ejected from the ejection port of the subsequent nozzle.

[0009] In one embodiment, the detecting step detects that the subsequent treatment liquid has reached the ejection opening of the subsequent nozzle.

[0010] In one embodiment, the detecting step detects that the subsequent treatment liquid has reached the vicinity of the ejection opening of the subsequent nozzle.

[0011] In one embodiment, in the detecting step, the start of ejection of the subsequent treatment liquid is detected by an imaging device.

[0012] In one embodiment, in the detecting step, the start of ejection of the subsequent treatment liquid is detected by a photosensor.

[0013] In one embodiment, in the detecting step, the start of ejection of the subsequent treatment liquid is detected by a capacitance sensor.

[0014] In one embodiment, in the stopping step, the supply of the preceding processing liquid to the preceding nozzle is stopped after a predetermined time has elapsed since the start of the ejection of the following processing liquid was detected.

[0015] In one embodiment, the substrate processing method further includes a step of adjusting the timing for starting the supply of the preceding processing liquid based on a supply time indicating the time interval from the start of the supply of the preceding processing liquid to the stop of the supply of the preceding processing liquid due to the stopping step, and a predetermined time that determines the time interval for supplying the preceding processing liquid.

[0016] In one embodiment, the substrate processing method further includes the step of acquiring timing for stopping the supply of the preceding processing liquid.

[0017] In one embodiment, the substrate processing method further includes the step of detecting the start of discharge of the preceding processing liquid from the discharge port of the preceding nozzle.

[0018] According to one aspect of the present invention, a substrate processing apparatus processes a substrate with a processing liquid, and includes a substrate holding unit, a leading nozzle, a leading valve, a trailing nozzle, a trailing valve, a detection unit, and a control unit. The substrate holding unit holds the substrate. The leading nozzle has a discharge port and discharges the leading processing liquid from the discharge port toward the substrate held by the substrate holding unit. The leading valve controls supply of the leading processing liquid to the leading nozzle and stop of supply of the leading processing liquid to the leading nozzle. The trailing nozzle has a discharge port and discharges the trailing processing liquid from the discharge port toward the substrate held by the substrate holding unit. The trailing valve controls supply of the trailing processing liquid to the trailing nozzle and stop of supply of the trailing processing liquid to the trailing nozzle. The detection unit detects start of discharge of the trailing processing liquid from the discharge port of the trailing nozzle. The control unit controls the leading valve to start supplying the leading processing liquid to the leading nozzle, and then controls the trailing valve to start supplying the trailing processing liquid to the trailing nozzle. The control unit executes a closing operation control process to control the leading valve to stop supplying the leading processing liquid in response to the detection unit detecting the start of ejection of the trailing processing liquid.

[0019] In one embodiment, the detection section detects that the subsequent treatment liquid has been ejected from the ejection port of the subsequent nozzle.

[0020] In one embodiment, the detection section detects that the subsequent treatment liquid has reached the ejection opening of the subsequent nozzle.

[0021] In one embodiment, the detection section detects that the subsequent treatment liquid has reached the vicinity of the ejection opening of the subsequent nozzle.

[0022] In one embodiment, the detection section includes an imaging device that detects the start of ejection of the subsequent treatment liquid.

[0023] In one embodiment, the detection unit includes a photosensor that detects the start of ejection of the subsequent treatment liquid.

[0024] In one embodiment, the detection unit includes a capacitance sensor that detects the start of ejection of the subsequent treatment liquid.

[0025] In one embodiment, the control unit controls the preceding valve to stop supplying the preceding processing liquid after a predetermined time has elapsed since the detection unit detected the start of the discharge of the following processing liquid.

[0026] In one embodiment, the control unit adjusts the timing for starting the supply of the preceding processing liquid based on a supply time indicating the time interval from the start of supply of the preceding processing liquid to the stop of supply of the preceding processing liquid due to the closing operation control process, and a predetermined time that determines the time interval for supplying the preceding processing liquid.

[0027] In one embodiment, the control unit acquires the timing for stopping the supply of the preceding processing liquid.

[0028] In one embodiment, the detection unit detects the start of ejection of the preceding processing liquid from the ejection port of the preceding nozzle.

[0029] In one embodiment, the substrate processing apparatus further includes a plurality of processing chambers, each of which accommodates the substrate holder, the leading nozzle, and the trailing nozzle, and the control unit executes the closing operation control process for each of the processing chambers. [Effects of the Invention]

[0030] The substrate processing method and substrate processing apparatus according to the present invention can reduce the burden on the worker. [Brief explanation of the drawings]

[0031] [Figure 1] 1 is a schematic view of a substrate processing apparatus according to a first embodiment of the present invention. [Figure 2] 1 is a plan view schematically showing the configuration of a processing section included in a substrate processing apparatus according to a first embodiment of the present invention. [Figure 3] 1 is a diagram schematically illustrating a configuration of a substrate processing apparatus according to a first embodiment of the present invention. [Figure 4] 3 is a diagram showing an imaging range of an imaging device included in the substrate processing apparatus according to the first embodiment of the present invention. FIG. [Figure 5] FIG. 10 is a diagram showing a captured image when a first chemical liquid is being discharged from a first discharge port. [Figure 6] FIG. 10 is a diagram showing an image captured when the discharge of the first rinse liquid from the second discharge port starts. [Figure 7] 1 is a flowchart showing a substrate processing method according to a first embodiment of the present invention. [Figure 8] 1 is a flowchart showing a flow of substrate processing. [Figure 9] 1 is a flowchart showing a flow of substrate processing. [Figure 10] 1 is a flowchart showing a flow of substrate processing. [Figure 11] 1 is a flowchart showing a flow of substrate processing. [Figure 12] 10 is a timing chart showing the opening and closing operations of the first to fourth valves and the detection operation by the imaging device. [Figure 13] FIG. 10 is a block diagram showing a part of the configuration of a substrate processing apparatus according to a second embodiment of the present invention. [Figure 14] 10 is a flowchart showing a substrate processing method according to a second embodiment of the present invention. [Figure 15] 1 is a flowchart showing a flow of substrate processing. [Figure 16] FIG. 10 is a block diagram showing a part of the configuration of a substrate processing apparatus according to a third embodiment of the present invention. [Figure 17] FIG. 4 is a diagram showing an input screen displayed on a display unit. [Figure 18] 1 is a flowchart showing a flow of substrate processing. [Figure 19] 1 is a flowchart showing a flow of substrate processing. [Figure 20] 10 is a timing chart showing the opening and closing operations of the first to fourth valves and the detection operation by the imaging device. [Figure 21] 1 is a flowchart showing a flow of substrate processing. [Figure 22] 4 is a timing chart showing the opening and closing operations of the first valve and the second valve, and the detection operation by the imaging device. [Figure 23] FIG. 1 is a diagram showing a first modified example of the substrate processing apparatus according to the first to fourth embodiments of the present invention. [Figure 24] FIG. 10 is a view showing a second modified example of the substrate processing apparatus according to the first to fourth embodiments of the present invention. [Figure 25] FIG. 10 is a view showing a third modified example of the substrate processing apparatus according to the first to fourth embodiments of the present invention. [Figure 26] FIG. 10 is a view showing a fourth modified example of the substrate processing apparatus according to the first to fourth embodiments of the present invention. [Figure 27] FIG. 10 is a view showing a fifth modified example of the substrate processing apparatus according to the first to fourth embodiments of the present invention. [Figure 28] FIG. 10 is a view showing a fifth modified example of the substrate processing apparatus according to the first to fourth embodiments of the present invention. DETAILED DESCRIPTION OF THE INVENTION

[0032] Hereinafter, embodiments of the substrate processing method and substrate processing apparatus of the present invention will be described with reference to the drawings (FIGS. 1 to 28). However, the present invention is not limited to the following embodiments, and can be implemented in various forms without departing from the spirit of the present invention. Note that duplicated explanations may be omitted as appropriate. In addition, the same or equivalent parts in the drawings will be designated by the same reference numerals, and explanations will not be repeated.

[0033] The "substrate" to be processed in the substrate processing method and substrate processing apparatus according to the present invention can be a semiconductor wafer, a glass substrate for a photomask, a glass substrate for a liquid crystal display, a glass substrate for a plasma display, a substrate for an FED (Field Emission Display), a substrate for an optical disk, a substrate for a magnetic disk, or a substrate for a magneto-optical disk. The following description of the present invention will be primarily focused on the case where a disk-shaped semiconductor wafer is the substrate to be processed. However, the substrate processing method and substrate processing apparatus according to the present invention can be similarly applied to various substrates other than the semiconductor wafers described above. Furthermore, the shape of the substrate is not limited to a disk shape, and the substrate processing method and substrate processing apparatus according to the present invention can be applied to substrates of various shapes.

[0034] [Embodiment 1] A first embodiment of the present invention will be described below with reference to FIGS. 1 to 12. First, a substrate processing apparatus 100 according to this embodiment will be described with reference to FIG. 1. FIG. 1 is a schematic diagram of the substrate processing apparatus 100 according to this embodiment. More specifically, FIG. 1 is a schematic plan view of the substrate processing apparatus 100. The substrate processing apparatus 100 processes substrates W with a processing liquid. More specifically, the substrate processing apparatus 100 is a single-wafer processing apparatus, and processes substrates W one by one. Hereinafter, processing substrates W may be referred to as "substrate processing."

[0035] As shown in FIG. 1, the substrate processing apparatus 100 includes a plurality of processing sections 1, a fluid cabinet 100A, a plurality of fluid boxes 100B, a plurality of load ports LP, an indexer robot IR, a center robot CR, and a control device 101.

[0036] Each load port LP accommodates a plurality of stacked substrates W. For example, the load port LP accommodates a plurality of patterned wafers. The patterned wafer is a substrate (wafer) on whose surface a fine pattern consisting of grooves and a laminated structure is formed. The laminated structure has a structure in which silicon nitride films and silicon oxide films are alternately stacked in the thickness direction of the laminated structure.

[0037] The indexer robot IR transports substrates W between the load port LP and the center robot CR. The center robot CR transports substrates W between the indexer robot IR and the processing section 1. Note that a placement stage (path) on which the substrate W is temporarily placed may be provided between the indexer robot IR and the center robot CR, and the device may be configured so that the substrate W is transferred indirectly between the indexer robot IR and the center robot CR via the placement stage.

[0038] The processing units 1 form multiple towers TW (four towers TW in FIG. 1). The towers TW are arranged to surround the center robot CR in a plan view. Each tower TW includes multiple processing units 1 (three processing units 1 in FIG. 1) stacked one above the other.

[0039] The fluid cabinet 100A contains a processing liquid. Each of the fluid boxes 100B corresponds to one of the towers TW. The processing liquid in the fluid cabinet 100A is supplied to all processing units 1 included in the tower TW corresponding to the fluid box 100B via one of the fluid boxes 100B.

[0040] Each of the processing units 1 supplies a processing liquid to the upper surface of the substrate W. The processing liquid includes a chemical liquid and a rinse liquid. In this embodiment, the chemical liquid includes a first chemical liquid and a second chemical liquid. The rinse liquid includes a first rinse liquid and a second rinse liquid.

[0041] The first chemical liquid is, for example, DHF (diluted hydrofluoric acid). DHF is diluted hydrofluoric acid. The native oxide film is removed from the substrate W by DHF.

[0042] The second chemical liquid is, for example, SC1. SC1 is a mixed liquid containing "NH4OH," "H2O2," and "H2O." When SC1 is supplied to the upper surface of the substrate W, particles adhering to the upper surface of the substrate W are removed. More specifically, SC1 is used to dissolve and remove organic matter and to peel and remove insoluble particles.

[0043] The rinse liquid is, for example, ultrapure water, carbonated water, electrolytic ion water, hydrogen water, ozone water, ammonia water, or diluted hydrochloric acid water (for example, hydrochloric acid water with a concentration of about 10 ppm to 100 ppm). The ultrapure water is, for example, deionized water. In this embodiment, the first rinse liquid and the second rinse liquid are the same type of rinse liquid.

[0044] The processing unit 1 supplies the first chemical liquid, the second chemical liquid, the first rinse liquid, and the second rinse liquid to the substrate W in the following order: first chemical liquid, first rinse liquid, second rinse liquid, second chemical liquid, second rinse liquid. For example, the processing unit 1 may supply DHF, SC1, the first rinse liquid (deionized water), and the second rinse liquid (deionized water) to the substrate W in the following order: DHF, the first rinse liquid (deionized water), the second rinse liquid (deionized water), SC1, and the second rinse liquid (deionized water).

[0045] Next, the control device 101 will be described. The control device 101 controls the operation of each unit of the substrate processing apparatus 100. For example, the control device 101 controls the load port LP, the indexer robot IR, and the center robot CR. The control device 101 includes a control unit 102 and a storage unit 103.

[0046] The control unit 102 controls the operation of each unit of the substrate processing apparatus 100 based on various information stored in the storage unit 103. The control unit 102 has, for example, a processor. The control unit 102 may have a CPU (Central Processing Unit) or an MPU (Micro Processing Unit) as the processor. Alternatively, the control unit 102 may have a general-purpose computing device or a dedicated computing device.

[0047] The storage unit 103 stores various types of information for controlling the operation of the substrate processing apparatus 100. For example, the storage unit 103 stores data and computer programs. The various types of information (data) include recipe data. The recipe data indicates a recipe that defines the processing content and processing procedure for the substrate W. The recipe sets conditions (setting values) for executing substrate processing.

[0048] The storage unit 103 includes a main storage device. The main storage device is, for example, a semiconductor memory. The storage unit 103 may further include an auxiliary storage device. The auxiliary storage device includes, for example, at least one of a semiconductor memory and a hard disk drive. The storage unit 103 may also include removable media.

[0049] Next, the substrate processing apparatus 100 of this embodiment will be further described with reference to Figures 1 and 2. Figure 2 is a plan view schematically showing the configuration of a processing section 1 included in the substrate processing apparatus 100 of this embodiment.

[0050] 2, the processing unit 1 has a processing chamber 2, a substrate holding unit 3, a first nozzle 41 to a fourth nozzle 44, a first nozzle moving mechanism 5, a second nozzle moving mechanism 6, a liquid receiving unit 9, an imaging device 110, and an illumination device 111. The substrate holding unit 3, the first nozzle 41 to the fourth nozzle 44, the first nozzle moving mechanism 5, the second nozzle moving mechanism 6, the liquid receiving unit 9, the imaging device 110, and the illumination device 111 are provided for each processing chamber 2. The imaging device 110 is an example of a "detection unit."

[0051] The substrate W is carried into the processing chamber 2 and processed therein. The processing chamber 2 has a substantially box shape. The processing chamber 2 houses a substrate holder 3, a first nozzle 41 to a fourth nozzle 44, part of a first nozzle movement mechanism 5, part of a second nozzle movement mechanism 6, and a liquid receiving part 9. The processing chamber 2 is, for example, a chamber.

[0052] The substrate holding unit 3 holds the substrate W. The operation of the substrate holding unit 3 is controlled by the control device 101 (control unit 102). More specifically, the substrate holding unit 3 holds the substrate W in a horizontal position. The substrate holding unit 3 is, for example, a spin chuck. The substrate holding unit 3 may have a spin base 31 and a plurality of chuck members 32 (four chuck members 32 in FIG. 2).

[0053] The spin base 31 is substantially disk-shaped and supports a plurality of chuck members 32 in a horizontal position. The plurality of chuck members 32 are arranged on the periphery of the spin base 31. The plurality of chuck members 32 clamp the periphery of the substrate W. The plurality of chuck members 32 hold the substrate W in a horizontal position. The operation of the plurality of chuck members 32 is controlled by a control device 101 (control unit 102). The plurality of chuck members 32 are arranged so that the center of the substrate W coincides with the center CP1 of the spin base 31.

[0054] 3, the spin base 31 rotates around the center CP1 of the spin base 31. Therefore, the substrate W rotates around the center of the substrate W.

[0055] Next, the first nozzle 41, the second nozzle 42, and the first nozzle moving mechanism 5 will be described.

[0056] The first nozzle 41 ejects a first chemical liquid (for example, DHF) toward the upper surface of the substrate W held by the substrate holder 3. As a result, the first chemical liquid is supplied to the substrate W, and a liquid film of the first chemical liquid is formed on the upper surface of the substrate W. Specifically, the first chemical liquid is ejected from the tip of the first nozzle 41. Furthermore, the first chemical liquid is ejected from the first nozzle 41 toward the substrate W while it is rotating.

[0057] The second nozzle 42 ejects a first rinse liquid (e.g., deionized water) toward the upper surface of the substrate W held by the substrate holder 3. As a result, the first rinse liquid is supplied to the substrate W, and a liquid film of the first rinse liquid is formed on the upper surface of the substrate W. Specifically, the first rinse liquid is ejected from the tip of the second nozzle 42. The first rinse liquid is also ejected from the second nozzle 42 toward the substrate W while it is rotating.

[0058] The first nozzle moving mechanism 5 simultaneously moves the first nozzle 41 and the second nozzle 42. The operation of the first nozzle moving mechanism 5 is controlled by the control device 101 (controller 102). More specifically, the first nozzle moving mechanism 5 moves the first nozzle 41 and the second nozzle 42 between a first retraction region and a processing position. The first retraction region is an area outside the substrate holder 3. More specifically, the first retraction region is an area outside the liquid receiving unit 9. FIG. 2 shows the first nozzle 41 and the second nozzle 42 positioned in the first retraction region. In this embodiment, the processing positions of the first nozzle 41 and the second nozzle 42 are both positions facing the center of the substrate W. Both the first nozzle 41 and the second nozzle 42 eject processing liquid from above the substrate W toward the substrate W.

[0059] The first nozzle movement mechanism 5 may have a first nozzle arm 51, a second nozzle arm 52, a first nozzle base 53, and a first nozzle movement unit 54. The first nozzle base 53 extends in the vertical direction. The base ends of the first nozzle arm 51 and the second nozzle arm 52 are connected to the first nozzle base 53. The first nozzle arm 51 and the second nozzle arm 52 extend in the horizontal direction from the first nozzle base 53. In this embodiment, the first nozzle arm 51 and the second nozzle arm 52 are disposed adjacent to each other in the horizontal plane and extend parallel to each other.

[0060] The first nozzle arm 51 supports the first nozzle 41. The first nozzle 41 protrudes vertically downward from the first nozzle arm 51. Similarly, the second nozzle arm 52 supports the second nozzle 42. The second nozzle 42 protrudes vertically downward from the second nozzle arm 52. The first nozzle 41 may be disposed at the tip of the first nozzle arm 51. Similarly, the second nozzle 42 may be disposed at the tip of the second nozzle arm 52.

[0061] The first nozzle moving unit 54 rotates the first nozzle base 53 around the center CP2 of the first nozzle base 53. As a result, the first nozzle arm 51 and the second nozzle arm 52 rotate around the center CP2 of the first nozzle base 53, and the first nozzle 41 and the second nozzle 42 move in the circumferential direction around the center CP2 of the first nozzle base 53. The first nozzle moving unit 54 is controlled by the control device 101 (control unit 102). The first nozzle moving unit 54 includes, for example, a stepping motor. Alternatively, the first nozzle moving unit 54 may include a motor and a reducer.

[0062] Here, the operation of the first nozzle moving mechanism 5 will be described. The first nozzle moving mechanism 5 first moves the first nozzle 41 to the processing position. At this time, the second nozzle 42 moves in synchronization with the first nozzle 41. More specifically, the second nozzle 42 moves to the standby position. Here, the standby position is a position adjacent to the processing position in the horizontal plane. Therefore, the standby position is a position above the substrate W.

[0063] The first nozzle 41 supplies the first chemical liquid from the processing position to the substrate W. After the supply of the first chemical liquid by the first nozzle 41 stops, the first nozzle movement mechanism 5 moves the second nozzle 42 from the standby position to the processing position. At this time, the first nozzle 41 moves in synchronization with the second nozzle 42. The second nozzle 42 mainly supplies the first rinse liquid from the processing position to the substrate W. In this embodiment, the second nozzle 42 starts ejecting the first rinse liquid when it is positioned at the standby position. Therefore, the second nozzle 42 supplies the first rinse liquid to the substrate W even while moving from the standby position to the processing position.

[0064] Next, the third nozzle 43, the fourth nozzle 44, and the second nozzle moving mechanism 6 will be described.

[0065] The third nozzle 43 is a fixed nozzle that ejects a second rinse liquid (e.g., deionized water) from a fixed position toward the upper surface of the substrate W held by the substrate holder 3. As a result, the second rinse liquid is supplied to the substrate W. Specifically, the second rinse liquid is ejected from the tip of the third nozzle 43. The third nozzle 43 is also disposed outside the liquid receiving part 9, and ejects the second rinse liquid from outside the liquid receiving part 9 toward the center of the rotating substrate W.

[0066] The fourth nozzle 44 ejects the second chemical liquid (for example, SC1) toward the upper surface of the substrate W held by the substrate holder 3. As a result, the second chemical liquid is supplied to the substrate W. Specifically, the second chemical liquid is ejected from the tip of the fourth nozzle 44. Moreover, the second chemical liquid is ejected from the fourth nozzle 44 toward the substrate W while it is rotating.

[0067] The second nozzle moving mechanism 6 moves the fourth nozzle 44 between the second retraction area and the processing position. The operation of the second nozzle moving mechanism 6 is controlled by the control device 101 (controller 102). The second retraction area, like the first retraction area, is an area outside the liquid receiving section 9. FIG. 2 shows the fourth nozzle 44 positioned in the second retraction area. The processing position of the fourth nozzle 44 is a position facing the center of the substrate W, like the processing positions of the first nozzle 41 and the second nozzle 42.

[0068] The second nozzle movement mechanism 6 may have a third nozzle arm 61, a second nozzle base 62, and a second nozzle movement unit 63. The second nozzle base 62 extends vertically. A base end of the third nozzle arm 61 is connected to the second nozzle base 62. The third nozzle arm 61 extends horizontally from the second nozzle base 62.

[0069] The third nozzle arm 61 supports the fourth nozzle 44. The fourth nozzle 44 protrudes vertically downward from the third nozzle arm 61. The fourth nozzle 44 may be disposed at the tip of the third nozzle arm 61.

[0070] The second nozzle moving unit 63 rotates the second nozzle base 62 around the center CP3 of the second nozzle base 62. As a result, the third nozzle arm 61 turns around the center CP3 of the second nozzle base 62, and the fourth nozzle 44 moves in the circumferential direction around the center CP3 of the second nozzle base 62. The second nozzle moving unit 63 is controlled by the control device 101 (control unit 102). The second nozzle moving unit 63 includes, for example, a stepping motor. Alternatively, the second nozzle moving unit 63 may include a motor and a reducer.

[0071] After the supply of the first rinse liquid by the second nozzle 42 stops and the first nozzle 41 and the second nozzle 42 move to the first evacuation area, the second nozzle movement mechanism 6 moves the fourth nozzle 44 from the second evacuation area to the processing position. The fourth nozzle 44 supplies the second chemical liquid to the substrate W from the processing position.

[0072] Next, a description will be given of the liquid receiving part 9. The liquid receiving part 9 surrounds the periphery of the substrate holding part 3 and receives the processing liquid discharged from the substrate W. The liquid receiving part 9 is, for example, a cup or a guard.

[0073] Next, the imaging device 110 will be described. The imaging device 110 has, for example, an imaging element, an electronic shutter, and an optical system. The imaging element may be, for example, a CCD (Charge Coupled Device). The optical system includes, for example, a lens. The imaging device 110 captures an image of the inside of the processing chamber 2 and generates a captured image SG. The imaging device 110 outputs the captured image SG to the control device 101. Specifically, the imaging device 110 outputs the captured image SG to the control unit 102. The operation of the imaging device 110 is controlled by the control device 101 (control unit 102).

[0074] In this embodiment, the imaging device 110 is disposed outside the processing chamber 2. The processing chamber 2 has a side wall 2a facing the imaging device 110, and the side wall 2a is provided with a window facing the imaging device 110. The imaging device 110 captures an image of the inside of the processing chamber 2 through the window in the side wall 2a. The window transmits light. For example, the window transmits visible light.

[0075] The imaging device 110 captures an image of the inside of the processing chamber 2 and detects the start of the discharge of the first rinse liquid by the second nozzle 42. Similarly, the imaging device 110 captures an image of the inside of the processing chamber 2 and detects the start of the discharge of the second rinse liquid by the third nozzle 43 and the start of the discharge of the second chemical liquid by the fourth nozzle 44. In this embodiment, the imaging device 110 captures an image of the inside of the processing chamber 2 and detects that the first rinse liquid has been discharged from the tip of the second nozzle 42. Similarly, the imaging device 110 captures an image of the inside of the processing chamber 2 and detects that the second rinse liquid has been discharged from the tip of the third nozzle 43. Furthermore, the imaging device 110 captures an image of the inside of the processing chamber 2 and detects that the second chemical liquid has been discharged from the tip of the fourth nozzle 44.

[0076] The control device 101 (controller 102) acquires the timing at which the second nozzle 42 starts discharging the first rinse liquid, based on the captured image SG input from the imaging device 110. Similarly, the control device 101 (controller 102) acquires the timing at which the third nozzle 43 starts discharging the second rinse liquid and the timing at which the fourth nozzle 44 starts discharging the second chemical liquid, based on the captured image SG input from the imaging device 110. In this embodiment, the timing at which the first rinse liquid starts discharging indicates the timing at which the first rinse liquid is discharged from the tip of the second nozzle 42. Similarly, the timing at which the second rinse liquid starts discharging indicates the timing at which the second rinse liquid is discharged from the tip of the third nozzle 43, and the timing at which the second chemical liquid starts discharging indicates the timing at which the second chemical liquid is discharged from the tip of the fourth nozzle 44.

[0077] Next, the illumination device 111 will be described. The illumination device 111 irradiates light into the processing chamber 2. The operation of the illumination device 111 is controlled by the control device 101 (controller 102). By irradiating light into the processing chamber 2, it becomes easy to detect the start of discharge of the first rinse liquid, the second rinse liquid, and the second chemical liquid. The illumination device 111 irradiates light when substrate processing is being performed. For example, the illumination device 111 may irradiate light only when the imaging device 110 is performing an imaging operation.

[0078] Specifically, the imaging device 110 captures images of the inside of the processing chamber 2 at a predetermined frame rate (e.g., 60 frames per second). As a result, each frame of the captured image SG is sequentially input to the control unit 102. The pixel value of each frame changes according to a change in luminance value. The luminance value changes depending on whether or not the processing liquid is captured in the captured image SG. The control unit 102 acquires the ejection start timing of the first rinse liquid, the ejection start timing of the second rinse liquid, and the ejection start timing of the second chemical liquid based on the pixel values ​​of each frame of the captured image SG. According to this embodiment, by irradiating the inside of the processing chamber 2 with light, the amount of change in luminance value, which changes depending on whether or not the processing liquid is captured in the captured image SG, increases. Therefore, by irradiating the inside of the processing chamber 2 with light, it becomes easier to detect the ejection start timing of the first rinse liquid, the ejection start timing of the second rinse liquid, and the ejection start timing of the second chemical liquid.

[0079] Next, a substrate processing apparatus 100 according to this embodiment will be described with reference to FIGS. 1 to 3. FIG. 3 is a diagram schematically illustrating the configuration of the substrate processing apparatus 100 according to this embodiment. Specifically, FIG. 3 includes a cross section schematically illustrating the configuration of a processing section 1 included in the substrate processing apparatus 100. Note that, for ease of understanding, in FIG. 3, the fourth nozzle 44 and the second nozzle movement mechanism 6 are depicted above the first nozzle 41, the second nozzle 42, and the first nozzle movement mechanism 5.

[0080] 3, the substrate processing apparatus 100 further includes a substrate rotation unit 7, first liquid supply pipes 81 to 84, first valves VA1 to VA4, and first to fourth suck-back valves SB1 to SB4. The substrate rotation unit 7, first liquid supply pipes 81 to 84, first valves VA1 to VA4, and first to fourth suck-back valves SB1 to SB4 are provided for each processing chamber 2. In this embodiment, the first to fourth valves VA1 to VA4 are open / close valves.

[0081] The processing chamber 2 further accommodates the substrate rotation unit 7 and portions of the first to fourth liquid supply pipes 81 to 84. The first to fourth valves VA1 to VA4 and the first to fourth suck-back valves SB1 to SB4 are disposed outside the processing chamber 2. Specifically, the first to fourth valves VA1 to VA4 and the first to fourth suck-back valves SB1 to SB4 are accommodated in the fluid box 100B described with reference to FIG.

[0082] The substrate rotation unit 7 rotates the substrate W and the substrate holder 3 together around a first rotation axis AX1. The operation of the substrate rotation unit 7 is controlled by a control device 101 (control unit 102). The first rotation axis AX1 extends vertically and passes through a center CP1 of the spin base 31 shown in FIG.

[0083] More specifically, the substrate rotation unit 7 rotates the spin base 31 about the first rotation axis AX1. Therefore, the spin base 31 rotates about the first rotation axis AX1. As a result, the substrate W held by the substrate holder 3 rotates about the first rotation axis AX1.

[0084] The substrate rotation unit 7 has, for example, a motor main body 71 and a shaft 72. The shaft 72 is coupled to the spin base 31. The motor main body 71 rotates the shaft 72, which in turn rotates the spin base 31. The operation of the motor main body 71 is controlled by a control device 101 (control unit 102).

[0085] Next, the first nozzle movement mechanism 5 will be described. The first nozzle movement unit 54 described with reference to Fig. 2 rotates the first nozzle base 53 about the second rotation axis AX2. As a result, the first nozzle 41 and the second nozzle 42 move around the first nozzle base 53 in the circumferential direction centered on the second rotation axis AX2. The second rotation axis AX2 extends vertically and passes through the center CP2 of the first nozzle base 53 shown in Fig. 2.

[0086] Next, the second nozzle movement mechanism 6 will be described. The second nozzle movement unit 63 described with reference to Fig. 2 rotates the second nozzle base 62 about the third rotation axis AX3. As a result, the fourth nozzle 44 moves around the second nozzle base 62 in the circumferential direction centered on the third rotation axis AX3. The third rotation axis AX3 extends vertically and passes through the center CP3 of the second nozzle base 62 shown in Fig. 2.

[0087] Next, the first nozzle 41 to the fourth nozzle 44, the first liquid supply pipe 81 to the fourth liquid supply pipe 84, and the first valve VA1 to the fourth valve VA4 will be described.

[0088] The first liquid supply pipe 81 is connected to the first nozzle 41. The first liquid supply pipe 81 is a tubular member and supplies the first chemical liquid to the first nozzle 41. As shown in FIG. 3, the first nozzle 41 has a first discharge port 41a. The first discharge port 41a is formed at the tip of the first nozzle 41. The first chemical liquid supplied from the first liquid supply pipe 81 to the first nozzle 41 is discharged from the first discharge port 41a.

[0089] The first valve VA1 is provided on the first liquid supply pipe 81. The first valve VA1 controls the supply of the first chemical liquid to the first nozzle 41 and the stop of the supply of the first chemical liquid to the first nozzle 41.

[0090] Specifically, the first valve VA1 can be switched between an open state and a closed state. The control device 101 (control unit 102) controls the opening and closing operation of the first valve VA1. When the first valve VA1 is in the open state, the first chemical liquid flows through the first liquid supply pipe 81 to the first nozzle 41. As a result, the first chemical liquid is discharged from the first discharge port 41a. On the other hand, when the first valve VA1 is in the closed state, the flow of the first chemical liquid through the first liquid supply pipe 81 stops.

[0091] The second liquid supply pipe 82 is connected to the second nozzle 42. The second liquid supply pipe 82 is a tubular member and supplies the first rinse liquid to the second nozzle 42. As shown in FIG. 3, the second nozzle 42 has a second discharge port 42a. The second discharge port 42a is formed at the tip of the second nozzle 42. The first rinse liquid supplied from the second liquid supply pipe 82 to the second nozzle 42 is discharged from the second discharge port 42a. The center-to-center distance between the first discharge port 41a and the second discharge port 42a is, for example, 20 mm.

[0092] The second valve VA2 is provided in the second liquid supply pipe 82. The second valve VA2 controls the supply of the first rinse liquid to the second nozzle 42 and the stop of the supply of the first rinse liquid to the second nozzle 42. The configuration of the second valve VA2 is similar to that of the first valve VA1, and therefore a detailed description thereof will be omitted.

[0093] The third liquid supply pipe 83 is connected to the third nozzle 43. The third liquid supply pipe 83 is a tubular member and supplies the second rinse liquid to the third nozzle 43. As shown in FIG. 3, the third nozzle 43 has a third discharge port 43a. The third discharge port 43a is formed at the tip of the third nozzle 43. The second rinse liquid supplied from the third liquid supply pipe 83 to the third nozzle 43 is discharged from the third discharge port 43a.

[0094] The third valve VA3 is provided on the third liquid supply pipe 83. The third valve VA3 controls the supply of the second rinse liquid to the third nozzle 43 and the stop of the supply of the second rinse liquid to the third nozzle 43. The configuration of the third valve VA3 is similar to that of the first valve VA1, and therefore a detailed description thereof will be omitted.

[0095] Fourth liquid supply pipe 84 is connected to fourth nozzle 44. Fourth liquid supply pipe 84 is a tubular member and supplies the second chemical liquid to fourth nozzle 44. As shown in FIG. 3, fourth nozzle 44 has fourth outlet 44a. Fourth outlet 44a is formed at the tip of fourth nozzle 44. The second chemical liquid supplied from fourth liquid supply pipe 84 to fourth nozzle 44 is discharged from fourth outlet 44a.

[0096] The fourth valve VA4 is provided in the fourth liquid supply pipe 84. The fourth valve VA4 controls the supply of the second chemical liquid to the fourth nozzle 44 and the stop of the supply of the second chemical liquid to the fourth nozzle 44. The configuration of the fourth valve VA4 is similar to that of the first valve VA1, and therefore a detailed description thereof will be omitted.

[0097] Next, the first suckback valve SB1 to the fourth suckback valve SB4 will be described. The first suckback valve SB1 to the fourth suckback valve SB4 are provided in the first liquid supply pipe 81 to the fourth liquid supply pipe 84, respectively. More specifically, the first suckback valve SB1 to the fourth suckback valve SB4 are provided downstream of the first valve VA1 to the fourth valve VA4, respectively.

[0098] When discharge of the first chemical liquid from first nozzle 41 stops, first suck-back valve SB1 sucks in the first chemical liquid in first liquid supply pipe 81, thereby drawing the first chemical liquid from first discharge port 41a into first liquid supply pipe 81. As a result, when discharge of the first chemical liquid stops, the first chemical liquid is less likely to fall from first discharge port 41a in the form of relatively large clumps (droplets). In other words, "dripping" is less likely to occur. The operation of first suck-back valve SB1 is controlled by control device 101 (control unit 102).

[0099] The second suck-back valve SB2 to the fourth suck-back valve SB4 have the same configuration as the first suck-back valve SB1, and therefore detailed description thereof will be omitted.

[0100] Next, the imaging range SH of the imaging device 110 will be described with reference to Figures 1 to 4. Figure 4 is a diagram showing the imaging range SH of the imaging device 110 included in the substrate processing apparatus 100 of this embodiment. Note that, for ease of understanding, Figure 4 shows only the first nozzle 41, the second nozzle 42, the third nozzle 43, a portion of the first liquid supply pipe 81, the second liquid supply pipe 82, and a portion of the third liquid supply pipe 83 out of the components within the processing chamber 2.

[0101] 4, the imaging range SH of the imaging device 110 includes a range in which the tip (second outlet 42a) of the second nozzle 42 positioned at the standby position, the first rinse liquid discharged from the tip (second outlet 42a), and the tip (third outlet 43a) of the third nozzle 43, and the second rinse liquid discharged from the tip (third outlet 43a) can be imaged. In this embodiment, the imaging range SH of the imaging device 110 further includes a range in which the tip (first outlet 41a) of the first nozzle 41 positioned at the processing position, and the first chemical liquid discharged from the tip (first outlet 41a) can be imaged. Therefore, the imaging device 110 can detect the start of discharge of the first rinse liquid and the start of discharge of the second rinse liquid.

[0102] The imaging device 110 captures an image of the imaging range SH and generates a captured image SG. The captured image SG is input to the control device 101 (controller 102). Therefore, the controller 102 can obtain the ejection start timing of the first rinse liquid and the ejection start timing of the second rinse liquid.

[0103] 2, when the first nozzle 41 and the second nozzle 42 are located in the first retraction area and the fourth nozzle 44 is located at the processing position, the imaging range SH of the imaging device 110 includes a range in which the tip (fourth outlet 44a) of the fourth nozzle 44 located at the processing position and the second chemical liquid being discharged from the tip (fourth outlet 44a) can be imaged. Therefore, the imaging device 110 can detect the start of discharge of the second chemical liquid. Furthermore, the control unit 102 can acquire the timing at which the discharge of the second chemical liquid starts.

[0104] Next, the processing executed by the control unit 102 will be described with reference to FIGS. 1 to 6. FIG. 5 is a diagram showing an image SG captured when the first chemical liquid is being discharged from the first discharge port 41a. FIG. 6 is a diagram showing an image SG captured when the discharge of the first rinse liquid from the second discharge port 42a begins. Note that, for ease of understanding, FIGS. 5 and 6 only show the first nozzle 41, the second nozzle 42, a portion of the first liquid supply pipe 81, and the second liquid supply pipe 82 out of the components within the processing chamber 2. Also, for ease of understanding, FIGS. 5 and 6 depict the first nozzle 41 and the second nozzle 42 farther apart than they actually are.

[0105] As shown in Fig. 5, when the second valve VA2 described with reference to Fig. 3 switches from a closed state to an open state while the first chemical liquid is being discharged from the first discharge port 41a, the supply of the first rinse liquid from the second liquid supply pipe 82 to the second nozzle 42 begins. Fig. 5 shows a frame of the captured image SG at a stage before the first rinse liquid reaches the second discharge port 42a. Fig. 6 shows a frame of the captured image SG at a stage when the discharge of the first rinse liquid from the second discharge port 42a begins.

[0106] When a frame of the captured image SG is input, the control unit 102 extracts an image processing area KA from the frame and acquires the timing to start ejecting the first rinse liquid based on the image of the image processing area KA. More specifically, the control unit 102 performs image processing on the image of the image processing area KA to acquire pixel values. Then, the control unit 102 acquires the timing to start ejecting the first rinse liquid from the second nozzle 42 based on the acquired pixel values.

[0107] In this embodiment, the image processing region KA includes a first image processing region KA1 extending from the tip (second discharge port 42a) of the second nozzle 42 in the discharge direction of the first rinse liquid. Because the first rinse liquid is discharged vertically downward, the first image processing region KA1 has an elongated shape (e.g., a rectangular shape) extending in the vertical direction of the captured image SG. The horizontal width of the first image processing region KA1 is set wider than the width of the first rinse liquid, and the vertical length of the first image processing region KA1 is set to a length such that the first image processing region KA1 does not include the landing position of the first rinse liquid. The controller 102 acquires the timing at which the first rinse liquid is discharged from the second discharge port 42a based on the image of the first image processing region KA1.

[0108] The image processing area KA is set for the third nozzle 43 in the same manner as for the second nozzle 42. Specifically, the image processing area KA includes a second image processing area extending from the tip (third outlet 43a) of the third nozzle 43 in the ejection direction of the second rinse liquid. Therefore, the control unit 102 can detect the ejection start timing of the second rinse liquid based on the image of the second image processing area.

[0109] 2, and the fourth nozzle 44 is located at the processing position, the image processing area KA is set for the fourth nozzle 44 in the same manner as for the second nozzle 42. Specifically, the image processing area KA includes a third image processing area extending from the tip (fourth outlet 44a) of the fourth nozzle 44 in the ejection direction of the second chemical liquid. Therefore, the control unit 102 can detect the ejection start timing of the second chemical liquid based on the image of the third image processing area.

[0110] Next, a substrate processing method of this embodiment will be described with reference to Figures 1 to 7. Figure 7 is a flowchart showing the substrate processing method of this embodiment. The substrate processing method shown in Figure 7 is performed by the substrate processing apparatus 100 described with reference to Figures 1 to 6. Therefore, Figure 7 shows the operation of the substrate processing apparatus 100 of this embodiment.

[0111] 7 (operation of the substrate processing apparatus 100) starts when the center robot CR loads a substrate W into the processing chamber 2. As shown in Fig. 7, when the center robot CR loads the substrate W into the processing chamber 2, the substrate holder 3 holds the substrate W (step S1).

[0112] When the substrate holder 3 holds the substrate W, the imaging device 110 starts imaging (step S2).

[0113] When the imaging device 110 starts imaging, the substrate rotation unit 7 rotates the substrate holder 3. As a result, the substrate W rotates (step S3).

[0114] After the rotation of the substrate W starts, the substrate W is treated with a treatment liquid (step S4). In this embodiment, a first chemical liquid (e.g., DHF), a second chemical liquid (e.g., SC1), a first rinse liquid (e.g., deionized water), and a second rinse liquid (e.g., deionized water) are supplied to the substrate W in the following order, thereby treating the substrate W. The substrate rotation unit 7 stops the rotation of the substrate W when the substrate treatment is completed.

[0115] After the substrate processing is completed, the imaging device 110 ends imaging (step S5).

[0116] After the imaging device 110 has completed imaging, the substrate W is released from the substrate holder 3. Then, the center robot CR unloads the substrate W from the processing chamber 2 (step S6), thereby completing the substrate processing method (operation of the substrate processing apparatus 100) shown in FIG.

[0117] Next, the substrate processing method of this embodiment (operation of the substrate processing apparatus 100) will be described with reference to Figures 1 to 11. Figures 8 to 11 are flowcharts showing the flow of substrate processing (step S4 shown in Figure 7).

[0118] 8, when substrate processing starts, first, the first nozzle moving mechanism 5 moves the first nozzle 41 from the first retraction area to the processing position (step S11). At this time, the second nozzle 42 moves from the first retraction area to the standby position in synchronization with the first nozzle 41.

[0119] When the first nozzle 41 moves to the processing position, the control device 101 (controller 102) controls the first valve VA1 (preceding valve) to start supplying the first chemical liquid (preceding processing liquid) to the first nozzle 41 (preceding nozzle) (step S12). Specifically, the control device 101 (controller 102) sends an open signal to the first valve VA1. In response to receiving the open signal, the first valve VA1 switches from a closed state to an open state. As a result, the supply of the first chemical liquid to the first nozzle 41 starts.

[0120] When the supply of the first chemical liquid (preceding processing liquid) to the first nozzle 41 (preceding nozzle) begins, the first chemical liquid (preceding processing liquid) is ejected from the first outlet 41a (outlet of the preceding nozzle) and the first chemical liquid (preceding processing liquid) is supplied to the substrate W.

[0121] Note that a delay time occurs between the start of supply of the first chemical liquid to first nozzle 41 and the time the first chemical liquid is discharged from first outlet 41a. Specifically, at the first discharge of the first chemical liquid, a delay time occurs corresponding to the time required for the first chemical liquid to reach first nozzle 41 from first valve VA1. At the second or subsequent discharge of the first chemical liquid, a delay time due to a suck-back process occurs. Specifically, when the supply of the first chemical liquid is stopped, the first suck-back valve SB1 sucks back the first chemical liquid. Therefore, when the supply of the first chemical liquid starts, the first chemical liquid is drawn into first liquid supply pipe 81. As a result, a delay time occurs between the time when first valve VA1 opens and the start of flow of the first chemical liquid until the first chemical liquid is discharged from first outlet 41a.

[0122] When the control device 101 (control unit 102) starts supplying the first chemical liquid, it determines whether or not a first predetermined time T1 has elapsed (step S13). Specifically, the control unit 102 starts timing in response to sending an open signal to the first valve VA1. The first predetermined time T1 indicates a predetermined value as a time interval for supplying the first chemical liquid to the first nozzle 41, and is stored in the memory unit 103. The control unit 102 determines whether or not the timing result has reached the first predetermined time T1. The upper surface of the substrate W becomes covered with a liquid film of the first chemical liquid while the first predetermined time T1 has elapsed.

[0123] If the control device 101 (controller 102) determines that the first predetermined time T1 has not elapsed (No in step S13), it repeats the process of step S13. If the control device 101 (controller 102) determines that the first predetermined time T1 has elapsed (Yes in step S13), it controls the second valve VA2 (trail valve) to start supplying the first rinse liquid (trail processing liquid) to the second nozzle 42 (trail nozzle) (step S14). Specifically, the control device 101 (controller 102) sends an open signal to the second valve VA2. In response to receiving the open signal, the second valve VA2 switches from a closed state to an open state. As a result, the supply of the first rinse liquid to the second nozzle 42 starts.

[0124] As with the first chemical liquid, a first delay time DT1 occurs from the time when the supply of the first rinse liquid to the second nozzle 42 starts until the first rinse liquid is discharged from the second discharge port 42a.

[0125] After starting the supply of the first rinse liquid (following processing liquid) to the second nozzle 42 (following nozzle), the control device 101 (control unit 102) determines whether the start of ejection of the first rinse liquid (following processing liquid) from the second outlet 42a (outlet of the following nozzle) has been detected (step S15).

[0126] Specifically, the control device 101 (controller 102) determines whether or not the start of discharge of the first rinse liquid from the second discharge port 42a has been detected, based on the captured image SG input from the imaging device 110. More specifically, the control device 101 (controller 102) extracts a first image processing area KA1 (see FIGS. 5 and 6) from each frame of the captured image. Then, the control device 101 (controller 102) performs image processing on each first image processing area KA1, and determines whether or not the start of discharge of the first rinse liquid from the second discharge port 42a has been detected.

[0127] When the control device 101 (controller 102) determines that the start of discharge of the first rinse liquid from the second discharge port 42a has not been detected (No in step S15), the control device 101 (controller 102) repeats the process of step S15. When the control device 101 (controller 102) determines that the start of discharge of the first rinse liquid (following processing liquid) from the second discharge port 42a (the discharge port of the following nozzle) has been detected (Yes in step S15), the control device 101 (controller 102) executes a closing operation control process to control the first valve VA1 (preceding valve) to stop the supply of the first chemical liquid (preceding processing liquid) to the first nozzle 41 (preceding nozzle) (step S16). In this embodiment, the control device 101 (controller 102) stops the supply of the first chemical liquid at the timing when the first rinse liquid is discharged from the second discharge port 42a.

[0128] Specifically, the control device 101 (control unit 102) sends a close signal to the first valve VA1. In response to receiving the close signal, the first valve VA1 switches from an open state to a closed state. As a result, the supply of the first chemical liquid to the first nozzle 41 stops.

[0129] Furthermore, in this embodiment, the control device 101 (control unit 102) sends a suction signal to the first suck-back valve SB1. The first suck-back valve SB1 performs a suction operation based on the suction signal, and sucks the first chemical liquid in the first liquid supply pipe 81 (suck-back process). The closing operation of the first valve VA1 and the suction operation of the first suck-back valve SB1 are performed in parallel. As a result, the first chemical liquid at the tip side of the first nozzle 41 is pulled back, and the discharge of the first chemical liquid stops.

[0130] 9, after stopping the supply of the first chemical liquid, the first nozzle movement mechanism 5 moves the second nozzle 42 from the standby position to the processing position (step S21). Note that when the second nozzle 42 (leading nozzle) is located at the standby position, the second outlet 42a (outlet of the leading nozzle) starts to discharge the first rinse liquid (leading processing liquid). Therefore, the second nozzle 42 (leading nozzle) supplies the first rinse liquid (leading processing liquid) to the substrate W while moving from the standby position to the processing position. Then, after moving to the processing position, the second nozzle 42 (leading nozzle) supplies the first rinse liquid (leading processing liquid) to the substrate W from the processing position.

[0131] The control device 101 (control unit 102) determines whether a second predetermined time T2 has elapsed after the second nozzle 42 has moved to the processing position (step S22). Specifically, the control unit 102 starts timing in response to sending an open signal to the second valve VA2 (preceding valve). The second predetermined time T2 indicates a predetermined value as a time interval for supplying the first rinse liquid to the second nozzle 42, and is stored in the memory unit 103. The control unit 102 determines whether the timing result reaches the second predetermined time T2. The upper surface of the substrate W becomes covered with a liquid film of the first rinse liquid while the second predetermined time T2 has elapsed. In other words, the liquid film covering the upper surface of the substrate W is replaced with a liquid film of the first rinse liquid from the liquid film of the first chemical liquid.

[0132] If the control device 101 (controller 102) determines that the second predetermined time T2 has not elapsed (No in step S22), it repeats the process of step S22. If the control device 101 (controller 102) determines that the second predetermined time T2 has elapsed (Yes in step S22), it controls the third valve VA3 (trail valve) to start supplying the second rinse liquid (trail processing liquid) to the third nozzle 43 (trail nozzle) (step S23). Specifically, the control device 101 (controller 102) sends an open signal to the third valve VA3. In response to receiving the open signal, the third valve VA3 switches from a closed state to an open state. As a result, the supply of the second rinse liquid to the third nozzle 43 starts.

[0133] As with the first chemical liquid, a second delay time DT2 occurs from when the supply of the second rinse liquid to the third nozzle 43 starts until the second rinse liquid is discharged from the third discharge port 43a.

[0134] After starting the supply of the second rinse liquid (following processing liquid) to the third nozzle 43 (following nozzle), the control device 101 (control unit 102) determines whether the start of ejection of the second rinse liquid (following processing liquid) from the third outlet 43a (outlet of the following nozzle) has been detected, as with the first rinse liquid (step S24).

[0135] When the control device 101 (controller 102) determines that the start of discharge of the second rinse liquid from the third discharge port 43a has not been detected (No in step S24), it repeats the process of step S24. When the control device 101 (controller 102) determines that the start of discharge of the second rinse liquid (trailing processing liquid) from the third discharge port 43a (discharge port of the trailing nozzle) has been detected (Yes in step S24), it executes a closing operation control process to control the second valve VA2 (leading valve) to stop the supply of the first rinse liquid (leading processing liquid) to the second nozzle 42 (leading nozzle) (step S25). In this embodiment, the control device 101 (controller 102) stops the supply of the first rinse liquid at the timing when the second rinse liquid is discharged from the third discharge port 43a.

[0136] Specifically, the control device 101 (controller 102) sends a close signal to the second valve VA2. In response to receiving the close signal, the second valve VA2 switches from an open state to a closed state. As a result, the supply of the first rinse liquid to the second nozzle 42 stops.

[0137] Furthermore, in this embodiment, the control device 101 (controller 102) sends a suction signal to the second suck-back valve SB2. The second suck-back valve SB2 performs a suction operation based on the suction signal, and sucks the first rinse liquid from the second liquid supply pipe 82 (suck-back process). The closing operation of the second valve VA2 and the suction operation of the second suck-back valve SB2 are performed in parallel. As a result, the first rinse liquid at the tip side of the second nozzle 42 is pulled back, and the discharge of the first rinse liquid stops.

[0138] After the supply of the first rinse liquid is stopped, the first nozzle movement mechanism 5 moves the first nozzle 41 and the second nozzle 42 to the first retraction area (step S26). Note that the discharge of the second rinse liquid starts before the discharge of the first rinse liquid stops. Therefore, while the first nozzle 41 and the second nozzle 42 are moving to the first retraction area, the second rinse liquid (preceding processing liquid) is supplied to the upper surface of the substrate W from the third nozzle 43 (preceding nozzle).

[0139] As shown in FIG. 10, after the first nozzle 41 and the second nozzle 42 have moved to the first retraction area, the second nozzle moving mechanism 6 starts moving the fourth nozzle 44 (step S31).

[0140] When the movement of the fourth nozzle 44 starts, the control device 101 (controller 102) determines whether or not the third predetermined time T3 has elapsed (step S32). The fourth nozzle 44 moves from the second evacuation area to the processing position before the third predetermined time T3 has elapsed.

[0141] Specifically, the control unit 102 starts timing in response to the start of movement of the fourth nozzle 44. The third preset time T3 indicates a predetermined value as a time interval for supplying the second rinse liquid to the third nozzle 43, and is stored in the memory unit 103. The control unit 102 determines whether the timing result has reached the third preset time T3.

[0142] If the control device 101 (controller 102) determines that the third predetermined time T3 has not elapsed (No in step S32), it repeats the process of step S32. If the control device 101 (controller 102) determines that the third predetermined time T3 has elapsed (Yes in step S32), it controls the fourth valve VA4 (trail valve) to start supplying the second chemical liquid (trail processing liquid) to the fourth nozzle 44 (trail nozzle) (step S33). Specifically, the control device 101 (controller 102) sends an open signal to the fourth valve VA4. In response to receiving the open signal, the fourth valve VA4 switches from a closed state to an open state. As a result, the supply of the second chemical liquid to the fourth nozzle 44 starts.

[0143] As with the first chemical liquid, a third delay time DT3 occurs from when the supply of the second chemical liquid to the fourth nozzle 44 starts until the second chemical liquid is discharged from the fourth discharge port 44a.

[0144] After starting the supply of the second chemical liquid (trailing processing liquid) to the fourth nozzle 44 (trailing nozzle), the control device 101 (control unit 102) determines whether or not the start of ejection of the second chemical liquid (trailing processing liquid) from the fourth outlet 44a (outlet of the trailing nozzle) has been detected, as with the first rinse liquid (step S34).

[0145] When the control device 101 (controller 102) determines that the start of discharge of the second chemical liquid from the fourth outlet 44a has not been detected (No in step S34), it repeats the process of step S34. When the control device 101 (controller 102) determines that the start of discharge of the second chemical liquid (trailing processing liquid) from the fourth outlet 44a (the outlet of the trailing nozzle) has been detected (Yes in step S34), it executes a closing operation control process to control the third valve VA3 (leading valve) to stop the supply of the second rinse liquid (leading processing liquid) to the third nozzle 43 (leading nozzle) (step S35). In this embodiment, the control device 101 (controller 102) stops the supply of the second rinse liquid at the timing when the second chemical liquid is discharged from the fourth outlet 44a.

[0146] Specifically, the control device 101 (controller 102) sends a close signal to the third valve VA3. In response to receiving the close signal, the third valve VA3 switches from an open state to a closed state. As a result, the supply of the second rinse liquid to the third nozzle 43 stops.

[0147] Furthermore, in this embodiment, the control device 101 (controller 102) sends a suction signal to the third suck-back valve SB3. The third suck-back valve SB3 performs a suction operation based on the suction signal, and sucks the second rinse liquid from the third liquid supply pipe 83 (suck-back process). The closing operation of the third valve VA3 and the suction operation of the third suck-back valve SB3 are performed in parallel. As a result, the second rinse liquid at the tip side of the third nozzle 43 is pulled back, and the discharge of the second rinse liquid stops.

[0148] The control device 101 (control unit 102) determines whether a fourth predetermined time T4 has elapsed after stopping the supply of the second rinse liquid (step S36). Specifically, the control unit 102 starts timing in response to sending an open signal to the fourth valve VA4 (preceding valve). The fourth predetermined time T4 indicates a predetermined value as a time interval for supplying the second chemical liquid (preceding processing liquid) to the fourth nozzle 44 (preceding nozzle), and is stored in the memory unit 103. The control unit 102 determines whether the timing result reaches the fourth predetermined time T4. The upper surface of the substrate W becomes covered with a liquid film of the second chemical liquid while the fourth predetermined time T4 has elapsed. In other words, the liquid film covering the upper surface of the substrate W is replaced with a liquid film of the second chemical liquid from the liquid film of the rinse liquid.

[0149] If the control device 101 (controller 102) determines that the fourth predetermined time T4 has not elapsed (No in step S36), it repeats the process of step S36. If the control device 101 (controller 102) determines that the fourth predetermined time T4 has elapsed (Yes in step S36), it controls the third valve VA3 (trail valve) to start supplying the second rinse liquid (trail processing liquid) to the third nozzle 43 (trail nozzle) (step S37), similar to step S23 shown in FIG. 9. As already described, a delay time (fourth delay time DT4) occurs between when an open signal is sent to the third valve VA3 and when the third nozzle 43 starts to discharge the second rinse liquid.

[0150] As shown in FIG. 11, after starting the supply of the second rinse liquid (following processing liquid) to the third nozzle 43 (following nozzle), the control device 101 (control unit 102) determines whether the start of ejection of the second rinse liquid (following processing liquid) from the third outlet 43a (outlet of the following nozzle) has been detected (step S41), similar to step S24 shown in FIG. 9.

[0151] When the control device 101 (controller 102) determines that the start of discharge of the second rinse liquid from the third discharge port 43a has not been detected (No in step S41), the control device 101 (controller 102) repeats the process of step S41. When the control device 101 (controller 102) determines that the start of discharge of the second rinse liquid (trailing processing liquid) from the third discharge port 43a (the discharge port of the trailing nozzle) has been detected (Yes in step S41), the control device 101 (controller 102) executes a closing operation control process to control the fourth valve VA4 (leading valve) to stop the supply of the second chemical liquid (leading processing liquid) to the fourth nozzle 44 (leading nozzle) (step S42). In this embodiment, the control device 101 (controller 102) stops the supply of the second chemical liquid at the timing when the second rinse liquid is discharged from the third discharge port 43a.

[0152] Specifically, the control device 101 (control unit 102) sends a close signal to the fourth valve VA4. In response to receiving the close signal, the fourth valve VA4 switches from an open state to a closed state. As a result, the supply of the second chemical liquid to the fourth nozzle 44 stops.

[0153] Furthermore, in this embodiment, the control device 101 (control unit 102) sends a suction signal to the fourth suck-back valve SB4. The fourth suck-back valve SB4 performs a suction operation based on the suction signal, and sucks the second chemical liquid in the fourth liquid supply pipe 84 (suck-back process). The closing operation of the fourth valve VA4 and the suction operation of the fourth suck-back valve SB4 are performed in parallel. As a result, the second chemical liquid at the tip side of the fourth nozzle 44 is pulled back, and the discharge of the second chemical liquid stops.

[0154] After stopping the supply of the second chemical liquid, the control device 101 (control unit 102) determines whether a fifth predetermined time T5 has elapsed (step S43). Specifically, the control unit 102 starts timing in response to sending an open signal to the third valve VA3. The fifth predetermined time T5 indicates a predetermined value as a time interval for supplying the second rinse liquid to the third nozzle 43, and is stored in the memory unit 103. The control unit 102 determines whether the timing result reaches the fifth predetermined time T5. The upper surface of the substrate W becomes covered with a liquid film of the second rinse liquid while the fifth predetermined time T5 has elapsed. In other words, the liquid film covering the upper surface of the substrate W is replaced with a liquid film of the second rinse liquid from the liquid film of the second chemical liquid.

[0155] If the control device 101 (controller 102) determines that the fifth predetermined time T5 has not elapsed (No in step S43), it repeats the process of step S43. If the control device 101 (controller 102) determines that the fifth predetermined time T5 has elapsed (Yes in step S43), it controls the third valve VA3 to stop the supply of the second rinse liquid to the third nozzle 43 (step S44), similar to step S35 shown in FIG.

[0156] After the supply of the second rinsing liquid is stopped, the substrate rotator 7 increases the rotation speed of the substrate W to dry the substrate W (step S45). When a predetermined time has elapsed since the supply of the second rinsing liquid was stopped, the substrate rotator 7 stops the rotation of the substrate W. As a result, the operation (substrate processing method) of the substrate processing apparatus 100 transitions to step S5 shown in FIG.

[0157] The substrate processing method (operation of the substrate processing apparatus 100) of this embodiment has been described above with reference to Figures 1 to 11. The substrate processing method shown in Figures 7 to 11 is performed by the substrate processing apparatus 100 for each processing chamber 2.

[0158] Next, the substrate processing apparatus 100 of this embodiment will be described with reference to Figures 1 to 12. Figure 12 is a timing chart showing the opening and closing operations of the first valve VA1 to the fourth valve VA4 and the detection operation by the imaging device 110. In Figure 12, the horizontal axis represents time.

[0159] 12, when the first nozzle 41 moves to the processing position (time t1), the control device 101 (controller 102) sends an open signal to the first valve VA1. As a result, the first valve VA1 (preceding valve) switches from a closed state to an open state, the supply of the first chemical liquid to the first nozzle 41 begins, and the first chemical liquid (preceding processing liquid) is supplied to the substrate W from the first discharge port 41a (discharge port of the preceding nozzle).

[0160] When a first predetermined time T1 has elapsed since the open signal was sent to the first valve VA1 and it reaches time t2, the control device 101 (controller 102) sends an open signal to the second valve VA2. As a result, the second valve VA2 (trailing valve) switches from a closed state to an open state, and the supply of the first rinse liquid (trailing processing liquid) to the second nozzle 42 (trailing nozzle) begins.

[0161] As already described, the first delay time DT1 occurs between when the second valve VA2 switches from the closed state to the open state and when the first rinse liquid is discharged by the second nozzle 42. Therefore, the imaging device 110 detects the start of discharge of the first rinse liquid at time t3, when the first delay time DT1 has elapsed since time t2. As a result, the control device 101 (controller 102) sends a close signal to the first valve VA1 at time t3, when the first delay time DT1 has elapsed since time t2, to switch the first valve VA1 from the open state to the closed state. When the first valve VA1 (preceding valve) switches from the open state to the closed state, the supply of the first chemical liquid to the first nozzle 41 stops, and the supply of the first chemical liquid (preceding processing liquid) from the first discharge port 41a (discharge port of the preceding nozzle) to the substrate W stops.

[0162] When a second predetermined time T2 has elapsed since the control device 101 (controller 102) sent an open signal to the second valve VA2 (preceding valve) and time t4 has arrived, the control device 101 (controller 102) sends an open signal to the third valve VA3 (following valve). As a result, the third valve VA3 switches from a closed state to an open state, and the supply of the second rinse liquid (following processing liquid) to the third nozzle 43 (following nozzle) begins. As already described, a second delay time DT2 occurs between the time the third valve VA3 opens and the time the second rinse liquid is discharged by the third nozzle 43.

[0163] Therefore, the imaging device 110 detects the start of discharge of the second rinse liquid (following processing liquid) at time t5, when the second delay time DT2 has elapsed since time t4. As a result, the control device 101 (controller 102) sends a close signal to the second valve VA2 at time t5, when the second delay time DT2 has elapsed since time t4, to switch the second valve VA2 from an open state to a closed state. When the second valve VA2 (preceding valve) switches from an open state to a closed state, the supply of the first rinse liquid to the second nozzle 42 stops, and the supply of the first rinse liquid (preceding processing liquid) from the second outlet 42a (outlet of the preceding nozzle) to the substrate W stops.

[0164] When a third predetermined time T3 has elapsed since the control device 101 (control unit 102) sent an open signal to the third valve VA3 (leading valve) and time t6 has arrived, the control device 101 (control unit 102) sends an open signal to the fourth valve VA4 (following valve). As a result, the fourth valve VA4 switches from a closed state to an open state, and the supply of the second chemical liquid (following processing liquid) to the fourth nozzle 44 (following nozzle) begins. As already explained, a third delay time DT3 occurs between the time when the fourth valve VA4 opens and the time when the second chemical liquid is discharged by the fourth nozzle 44.

[0165] Therefore, the imaging device 110 detects the start of discharge of the second chemical liquid (the subsequent processing liquid) at time t7, when the third delay time DT3 has elapsed since time t6. As a result, the control device 101 (controller 102) sends a close signal to the third valve VA3 at time t7, when the third delay time DT3 has elapsed since time t6, to switch the third valve VA3 from the open state to the closed state. When the third valve VA3 (the preceding valve) switches from the open state to the closed state, the supply of the second rinse liquid to the third nozzle 43 stops, and the supply of the second rinse liquid (the preceding processing liquid) from the third outlet 43a (the outlet of the preceding nozzle) to the substrate W stops.

[0166] When a fourth predetermined time T4 has elapsed since the control device 101 (controller 102) sent an open signal to the fourth valve VA4 (preceding valve), at time t8, the control device 101 (controller 102) sends an open signal to the third valve VA3 (following valve). As a result, the third valve VA3 switches from a closed state to an open state, and the supply of the second rinse liquid (following processing liquid) to the third nozzle 43 (following nozzle) begins. As already described, a fourth delay time DT4 occurs between the time when the third valve VA3 switches from a closed state to an open state and the time when the second rinse liquid is discharged by the third nozzle 43.

[0167] Therefore, the imaging device 110 detects the start of discharge of the second rinse liquid (following processing liquid) at time t9, when the fourth delay time DT4 has elapsed since time t8. As a result, the control device 101 (controller 102) sends a close signal to the fourth valve VA4 at time t9, when the fourth delay time DT4 has elapsed since time t8, to switch the fourth valve VA4 from the open state to the closed state. When the fourth valve VA4 (preceding valve) switches from the open state to the closed state, the supply of the second chemical liquid to the fourth nozzle 44 stops, and the supply of the second chemical liquid (preceding processing liquid) from the fourth outlet 44a (outlet of the preceding nozzle) to the substrate W stops.

[0168] 1 to 12, the first embodiment of the present invention has been described. According to this embodiment, the control unit 102 switches the preceding valve from an open state to a closed state in response to the imaging device 110 (detection unit) detecting the start of ejection of the subsequent processing liquid. Therefore, the operator does not need to set the delay times (first delay time DT1 to fourth delay time DT4) that delay the timing of the closing operation of the preceding valve.

[0169] For example, the delay time needs to be changed every time the discharge pressure of each processing liquid changes. Similarly, the delay time needs to be changed every time the air pressure for opening and closing each valve or the suck-back position of each processing liquid changes. Furthermore, the delay time needs to be changed every time the power usage of the factory in which the substrate processing apparatus 100 is installed changes. Therefore, a configuration in which the operator sets the delay time places a heavy burden on the operator. In contrast, according to this embodiment, the operator does not need to set the delay time, thereby reducing the burden on the operator.

[0170] Furthermore, the length of the delay time varies for each processing chamber 2 due to factors such as the length of the piping from each valve to each outlet and the elevation difference between each outlet. Therefore, the delay time must be set for each processing chamber 2. According to this embodiment, the operator does not need to set the delay time, which reduces the burden on the operator.

[0171] Furthermore, in a configuration in which the ejection of the preceding processing liquid from the preceding nozzle is stopped at the timing when the supply of the following processing liquid to the following nozzle is started (the timing when the following valve is switched from a closed state to an open state), particles may be generated on the substrate W due to the delay time between when the supply of the following processing liquid to the following nozzle is started and when the following processing liquid lands on the substrate W. In particular, when a fine pattern is formed on the surface of the substrate W, the generation of particles has a significant impact on the characteristics of the substrate W. Particles are, for example, watermarks.

[0172] More specifically, poor coverage may occur on the outer periphery of the substrate W due to the delay time between when the supply of the subsequent processing liquid to the subsequent nozzle begins and when the subsequent processing liquid lands on the substrate W. Poor coverage means that the top surface of the substrate W is exposed and not covered by a liquid film of the processing liquid. Poor coverage occurs mainly due to the surface tension of the processing liquid. If poor coverage occurs on the outer periphery of the substrate W and the outer periphery of the substrate W dries, watermarks may occur on the outer periphery of the substrate W.

[0173] Furthermore, in a configuration in which the ejection of the preceding processing liquid from the preceding nozzle is stopped at the timing when the supply of the following processing liquid to the following nozzle is started (the timing when the following valve is switched from a closed state to an open state), there is a possibility that the pattern formed on the surface of the substrate W will collapse due to the delay time between the start of the supply of the following processing liquid to the following nozzle and the arrival of the following processing liquid on the substrate W. In particular, when a fine pattern is formed on the surface of the substrate W, the collapse of the pattern has a significant effect on the characteristics of the substrate W.

[0174] More specifically, as already explained, if poor coverage occurs at the outer periphery of the substrate W due to the delay time between when the supply of the subsequent processing liquid to the subsequent nozzles starts and when the subsequent processing liquid lands on the substrate W, there is a possibility that the outer periphery of the substrate W will dry out. Pattern collapse occurs due to the surface of the substrate W drying out.

[0175] In contrast, according to this embodiment, the start of ejection of the trailing processing liquid from the trailing nozzle is detected. Therefore, compared to a configuration in which ejection of the trailing processing liquid from the leading nozzle is stopped at the timing when supply of the trailing processing liquid to the trailing nozzle is started (the timing when the trailing valve is switched from a closed state to an open state), the timing at which ejection of the trailing processing liquid from the leading nozzle is stopped can be controlled so as to reduce the delay time from when ejection of the leading processing liquid is stopped to when the trailing processing liquid lands on the substrate W. Therefore, the delay time from when ejection of the leading processing liquid is stopped to when the trailing processing liquid lands on the substrate W can be reduced, thereby suppressing the occurrence of watermarks and pattern collapse.

[0176] In this embodiment, the imaging device 110 starts imaging after the substrate holder 3 holds the substrate W and ends imaging after the substrate processing is performed, but the timing at which the imaging device 110 starts and ends imaging is not particularly limited as long as it can detect the start of ejection of the first rinse liquid, the start of ejection of the second rinse liquid, and the start of ejection of the second chemical liquid.

[0177] [Embodiment 2] Next, a second embodiment of the present invention will be described with reference to Figures 1 to 6, 9 to 11, and 13 to 15. However, differences from the first embodiment will be described, and a description of the same aspects as the first embodiment will be omitted. The second embodiment differs from the first embodiment in that data indicating the timing at which each treatment liquid starts to be ejected is transmitted to an external device GS.

[0178] Fig. 13 is a block diagram showing a part of the configuration of the substrate processing apparatus 100 of this embodiment. For ease of understanding, Fig. 13 shows only the control device 101 and the communication unit 112 among the components of the substrate processing apparatus 100, and omits the other components.

[0179] 13, the substrate processing apparatus 100 of this embodiment further includes a communication unit 112. The communication unit 112 communicates with an external device GS. For example, the communication unit 112 may be connected to a network NW via a wired or wireless connection and communicate with the external device GS connected to the network NW. The network NW includes, for example, the Internet, a local area network (LAN), and a public telephone network. In this case, the communication unit 112 may be, for example, a network interface controller.

[0180] In this embodiment, the communication unit 112 transmits data indicating the ejection start timing of each processing liquid (first chemical liquid, second chemical liquid, first rinse liquid, and second rinse liquid) to the external apparatus GS. More specifically, the communication unit 112 transmits the ejection start timing of the first chemical liquid, the ejection start timing of the first rinse liquid, the ejection start timing (first time) of the second rinse liquid, the ejection start timing of the second chemical liquid, and the ejection start timing (second time) of the second rinse liquid to the external apparatus GS.

[0181] As described with reference to FIG. 4, the imaging range SH of imaging device 110 further includes a range in which the tip (first discharge port 41 a) of first nozzle 41 located at the processing position and the first chemical liquid discharged from the tip (first discharge port 41 a) can be imaged. In this embodiment, imaging device 110 further detects the start of discharge of the first chemical liquid, as well as the second chemical liquid, the first rinse liquid, and the second rinse liquid. Furthermore, control unit 102 further acquires the timing at which first nozzle 41 starts discharging the first chemical liquid, as well as the second chemical liquid, the first rinse liquid, and the second rinse liquid.

[0182] More specifically, when first nozzle 41 is located at the processing position, control unit 102 sets an image processing area KA for first nozzle 41. Specifically, image processing area KA includes a fourth image processing area extending from the tip (first discharge port 41a) of first nozzle 41 in the discharge direction of the first chemical liquid. Control unit 102 detects the discharge start timing of the first chemical liquid based on the image of the fourth image processing area.

[0183] The external device GS is, for example, a host computer or a server. The external device GS collects and analyzes the ejection start timing of each processing liquid. For example, the external device GS may transmit to the substrate processing apparatus 100 a command for adjusting the supply time of each processing liquid to the substrate W based on the collected ejection start timing of each processing liquid. Note that the external device GS may communicate with a plurality of substrate processing apparatuses 100. In this case, the external device GS collects the ejection start timing of each processing liquid for each substrate processing apparatus 100.

[0184] Next, a substrate processing method of this embodiment will be described with reference to Figures 1 to 6, 9 to 11, 13, and 14. Figure 14 is a flowchart showing the substrate processing method of this embodiment. The substrate processing method shown in Figure 14 is performed by the substrate processing apparatus 100 described with reference to Figures 1 to 6 and 13. Therefore, Figure 14 shows the operation of the substrate processing apparatus 100 of this embodiment.

[0185] The substrate processing method (operation of the substrate processing apparatus 100) shown in FIG. 14 further includes step S7 in addition to the substrate processing method (operation of the substrate processing apparatus 100) described with reference to FIG.

[0186] Specifically, when the center robot CR unloads the substrate W from the processing chamber 2 (step S6), the control device 101 (controller 102) controls the communication unit 112 to transmit data indicating the timings for starting the discharge of each processing liquid (first chemical liquid, second chemical liquid, first rinse liquid, and second rinse liquid) to the external device GS (step S7). As a result, the substrate processing method (operation of the substrate processing apparatus 100) shown in FIG. 14 is completed.

[0187] Next, the substrate processing method of this embodiment (operation of the substrate processing apparatus 100) will be described with reference to Figures 1 to 6, 9 to 11, and 13 to 15. Figure 15 is a flowchart showing the flow of substrate processing (step S4 shown in Figure 14). In detail, Figure 15 shows a part of the flow of substrate processing.

[0188] As shown in FIG. 15, when substrate processing is started, the first nozzle moving mechanism 5 moves the first nozzle 41 from the first retraction area to the processing position (step S51), similar to step S11 in FIG.

[0189] When the first nozzle 41 moves to the processing position, similar to step S12 in FIG. 8, the control device 101 (control unit 102) controls the first valve VA1 (preceding valve) to start supplying the first chemical liquid (preceding processing liquid) to the first nozzle 41 (preceding nozzle) (step S52).

[0190] After starting the supply of the first chemical liquid, the control device 101 (controller 102) determines whether or not the start of discharge of the first chemical liquid (preceding processing liquid) from the first discharge port 41a (discharge port of the preceding nozzle) has been detected (step S53). Specifically, the control device 101 (controller 102) determines whether or not the start of discharge of the first chemical liquid from the first discharge port 41a has been detected based on the captured image SG input from the imaging device 110. More specifically, the control device 101 (controller 102) extracts a fourth image processing region from each frame of the captured image SG. Then, the control device 101 (controller 102) performs image processing on each fourth image processing region and determines whether or not the start of discharge of the first chemical liquid from the first discharge port 41a has been detected.

[0191] When the control device 101 (controller 102) determines that the start of discharge of the first chemical liquid from the first discharge port 41a has not been detected (No in step S53), the control device 101 (controller 102) repeats the processing of step S53. When the control device 101 (controller 102) determines that the start of discharge of the first chemical liquid (preceding processing liquid) from the first discharge port 41a (the discharge port of the preceding nozzle) has been detected (Yes in step S53), the control device 101 (controller 102) determines whether or not a first predetermined time T1 has elapsed since the start of supply of the first chemical liquid, similar to step S13 in Fig. 8 (step S54). The subsequent steps (steps S55 to S57) are similar to steps S14 to S16 in Fig. 8, and therefore their description will be omitted.

[0192] The second embodiment of the present invention has been described above with reference to Figures 1 to 6, 9 to 11, and 13 to 15. According to this embodiment, it is possible to adjust the supply time of each processing liquid with higher precision than in a configuration in which the external device GS analyzes the timing at which an open signal is sent to each valve (first valve VA1 to fourth valve VA4).

[0193] Specifically, as already described, the timing at which each processing liquid (first chemical liquid, first rinse liquid, second rinse liquid, second chemical liquid) starts to be discharged from each discharge port (first discharge port 41a to fourth discharge port 44a) is delayed from the timing at which an open signal is sent to each valve (first valve VA1 to fourth valve VA4). These delay times are caused by fluctuations in the discharge pressure of each processing liquid, fluctuations in the air pressure that opens and closes each valve, fluctuations in the suck-back position of each processing liquid, the length of the piping from each valve to each discharge port, and the elevation difference between each discharge port. Therefore, the delay times are not uniform. Therefore, in a configuration that analyzes the timing at which an open signal is sent to each valve (first valve VA1 to fourth valve VA4), various factors must be taken into consideration in order to adjust the supply time of each processing liquid to the substrate W. Therefore, it is not easy to adjust the supply time of each processing liquid to the substrate W with high precision. In contrast to this, according to this embodiment, the ejection start timing of each processing liquid can be analyzed, and therefore the supply time of each processing liquid onto the substrate W can be adjusted with high precision.

[0194] In this embodiment, when the center robot CR unloads the substrate W from the processing chamber 2 (step S6), the control device 101 (controller 102) controls the communication unit 112 to transmit data indicating the timing at which each processing liquid is to be discharged to the external device GS, but the timing at which the data indicating the timing at which each processing liquid is to be discharged is not particularly limited. For example, the control device 101 (controller 102) may transmit data indicating the timing at which each processing liquid is to be discharged to the external device GS every time a predetermined number of substrate processes are performed.

[0195] Furthermore, in this embodiment, the ejection start timing of each processing liquid is detected, but the control unit 102 may acquire the supply stop timing of each processing liquid instead of or in addition to the ejection start timing of each processing liquid, and transmit the timing data to the external device GS. By analyzing the supply stop timing of each processing liquid instead of or in addition to the ejection start timing of each processing liquid, it becomes possible to adjust the supply time of each processing liquid to the substrate W with higher precision.

[0196] Specifically, the control unit 102 may acquire the timing at which a close signal is sent to the first valve VA1 as the timing at which the supply of the first chemical liquid is stopped (step S57 in FIG. 15). Similarly, the control unit 102 may acquire the timing at which a close signal is sent to the second valve VA2 (step S25 in FIG. 9), the timing at which a close signal is sent to the third valve VA3 (step S35 in FIG. 10), and the timing at which a close signal is sent to the fourth valve VA4 (step S42 in FIG. 11) as the timing at which the supply of the first rinse liquid, the second rinse liquid (first time), and the second chemical liquid is stopped.

[0197] [Embodiment 3] Next, a third embodiment of the present invention will be described with reference to Figures 1 to 8, 10, and 16 to 20. However, differences from the first and second embodiments will be described, and a description of the same aspects as the first and second embodiments will be omitted. The third embodiment differs from the first and second embodiments in that the cessation of the discharge of the first rinse liquid (preceding processing liquid) and the second chemical liquid (preceding processing liquid) is further delayed after the start of the discharge of the second rinse liquid (subsequent processing liquid).

[0198] Fig. 16 is a block diagram showing a part of the configuration of the substrate processing apparatus 100 of this embodiment. For ease of understanding, Fig. 16 shows only the control device 101, the input unit 113, and the display unit 114 among the components of the substrate processing apparatus 100, and omits the other components. As shown in Fig. 16, the substrate processing apparatus 100 of this embodiment further includes the input unit 113 and the display unit 114.

[0199] The input unit 113 is a user interface device operated by the worker. The input unit 113 inputs instructions (control signals) corresponding to operations by the worker to the control unit 102. The input unit 113 also inputs data corresponding to operations by the worker to the control unit 102. The input unit 113 typically includes a keyboard and a mouse. The input unit 113 may also include a touch sensor. The touch sensor is overlaid on the display surface of the display unit 114, and generates a signal indicating a touch operation on the display surface by the worker. The worker can input various instructions and data to the control unit 102 by performing a touch operation.

[0200] In this embodiment, the worker can operate the input unit 113 to input (register or set) various pieces of information into input fields on the screen displayed on the display unit 114. Specifically, the worker can operate the input unit 113 to input a value of the additional delay time ADT.

[0201] As described with reference to Figure 2, the third nozzle 43 is disposed outside the liquid receiving part 9, and ejects the second rinse liquid from the outside of the liquid receiving part 9 toward the center of the rotating substrate W. Therefore, a delay time occurs from when the ejection of the second rinse liquid from the third nozzle 43 begins until the second rinse liquid lands on the substrate W. Hereinafter, this delay time may be referred to as the "liquid arrival delay time." The additional delay time ADT may be set according to the liquid arrival delay time.

[0202] Fig. 17 is a diagram showing an input screen GA displayed by the display unit 114. The input screen GA is a screen for setting the additional delay time ADT. As shown in Fig. 17, the input screen GA includes an input field NR for inputting the value of the additional delay time ADT.

[0203] When the input screen GA is displayed on the display unit 114, the operator can input the value of the additional delay time ADT into the input field NR by operating the input unit 113. The operator may determine the value of the additional delay time ADT in consideration of, for example, the discharge flow rate of the second rinse liquid, the distance from the third discharge port 43a to the substrate W, and the like.

[0204] Next, the substrate processing method of this embodiment (operation of the substrate processing apparatus 100) will be described with reference to Figures 1 to 8, 10, and 16 to 19. Figures 18 and 19 are flowcharts showing the flow of substrate processing (step S4 shown in Figure 7). In detail, Figure 18 shows a part of the flow of substrate processing. Figure 19 shows another part of the flow of substrate processing.

[0205] As shown in FIG. 18, when the control device 101 (control unit 102) determines that the start of ejection of the second rinse liquid (following processing liquid) from the third ejection port 43a (ejection port of the following nozzle) has been detected (Yes in step S24), it executes a closing operation control process to control the second valve VA2 (preceding valve) to stop the supply of the first rinse liquid (preceding processing liquid) to the second nozzle 42 (preceding nozzle) (step S25).

[0206] In detail, when the control device 101 (controller 102) determines that the start of discharge of the second rinse liquid (following processing liquid) from the third discharge port 43a (discharge port of the following nozzle) has been detected (Yes in step S24), the control device 101 determines whether the additional delay time ADT described with reference to FIGS. 16 and 17 has elapsed (step S251). Specifically, the controller 102 starts timing in response to the detection of the start of discharge of the second rinse liquid. The controller 102 determines whether the timing result has reached the additional delay time ADT. The second rinse liquid lands on the substrate W while the additional delay time ADT has elapsed.

[0207] If the control device 101 (controller 102) determines that the additional delay time ADT has not elapsed (No in step S251), it repeats the process of step S251. If the control device 101 (controller 102) determines that the additional delay time ADT has elapsed (Yes in step S251), it executes a closing operation control process to control the second valve VA2 (preceding valve) to stop the supply of the first rinse liquid (preceding processing liquid) to the second nozzle 42 (preceding nozzle) (step S252).

[0208] Also, as shown in FIG. 19, when the control device 101 (control unit 102) determines that the start of ejection of the second rinse liquid (following processing liquid) from the third ejection port 43a (the ejection port of the following nozzle) has been detected (Yes in step S41), it executes a closing operation control process to control the fourth valve VA4 (preceding valve) to stop the supply of the second chemical liquid (preceding processing liquid) to the fourth nozzle 44 (preceding nozzle) (step S42).

[0209] Specifically, when the control device 101 (controller 102) determines that the start of discharge of the second rinse liquid (trailing processing liquid) from the third discharge port 43a (discharge port of the trailing nozzle) has been detected (Yes in step S41), the control device 101 (controller 102) determines whether the additional delay time ADT has elapsed (step S421), similar to step S251 shown in Fig. 18. Then, when the control device 101 (controller 102) determines that the additional delay time ADT has elapsed (Yes in step S421), the control device 101 (controller 102) executes a closing operation control process to control the fourth valve VA4 (leading valve) to stop the supply of the second chemical liquid (leading processing liquid) to the fourth nozzle 44 (leading nozzle) (step S422).

[0210] Next, the substrate processing apparatus 100 of this embodiment will be described with reference to Figures 1 to 8, 10, and 16 to 20. Figure 20 is a timing chart showing the opening and closing operations of the first valve VA1 to the fourth valve VA4 and the detection operation by the imaging device 110. In Figure 20, the horizontal axis represents time.

[0211] 20, the second valve VA2 does not transition to the closed state but maintains the open state at the timing (time t15) when the start of discharge of the second rinse liquid is detected. In this embodiment, the second valve VA2 switches from the open state to the closed state at the timing (time t16) when the additional delay time ADT has elapsed since the timing (time t15) when the start of discharge of the second rinse liquid was detected. Similarly, the fourth valve VA4 switches from the open state to the closed state at the timing (time t21) when the additional delay time ADT has elapsed since the timing (time t20) when the start of discharge of the second rinse liquid was detected.

[0212] The third embodiment of the present invention has been described above with reference to Figures 1 to 8, 10, and 16 to 20. According to this embodiment, poor coverage caused by the delay time in landing of the second rinse liquid after the start of discharge of the second rinse liquid becomes less likely to occur.

[0213] [Embodiment 4] Next, a fourth embodiment of the present invention will be described with reference to Figures 1 to 7, 9 to 11, 21, and 22. However, differences from the first to third embodiments will be described, and a description of the same aspects as the first to third embodiments will be omitted. The fourth embodiment differs from the first to third embodiments in that the timing at which the supply of the first chemical liquid starts is delayed.

[0214] 21 is a flowchart showing the flow of substrate processing (step S4 shown in FIG. 7). In detail, FIG. 21 shows a part of the flow of substrate processing. As shown in FIG. 21, when substrate processing starts, the first nozzle movement mechanism 5 moves the first nozzle 41 from the first retraction area to the processing position (step S71), similar to step S11 in FIG. 8.

[0215] When the first nozzle 41 moves to the processing position, the control device 101 (control unit 102) determines whether the start delay time SDT has elapsed (step S72). Specifically, the control unit 102 starts timing in response to the first nozzle 41 moving to the processing position. The start delay time SDT is stored in the memory unit 103. The control unit 102 determines whether the timing result has reached the start delay time SDT.

[0216] If the control device 101 (controller 102) determines that the start delay time SDT has not elapsed (No in step S72), it repeats the processing of step S72. If the control device 101 (controller 102) determines that the start delay time SDT has elapsed (Yes in step S72), it controls the second valve VA2 (trail valve) to start supplying the first rinse liquid (trail processing liquid) to the second nozzle 42 (trail nozzle) (step S73), similar to step S12 in Fig. 8. The subsequent operations (steps S74 to S77) are similar to steps S13 to S16 in Fig. 8, and therefore their description will be omitted.

[0217] Next, the substrate processing apparatus 100 of this embodiment will be described with reference to Figures 1 to 7, 9 to 11, 21, and 22. Figure 22 is a timing chart showing the opening and closing operations of the first valve VA1 and the second valve VA2, and the detection operation by the imaging device 110. In Figure 22, the horizontal axis represents time.

[0218] 22, the control device 101 (controller 102) sends an open signal to the first valve VA1 at a timing (time t22) when a further start delay time SDT has elapsed since the timing (time t21) when the first nozzle 41 has moved to the processing position. As a result, the first valve VA1 opens, the supply of the first chemical liquid to the first nozzle 41 starts, and the first chemical liquid is supplied to the substrate W from the first discharge port 41a.

[0219] Here, the start delay time SDT will be described. The start delay time SDT is determined based on the first delay time DT1. For example, the control unit 102 may acquire the first delay time DT1 when a first substrate processing is performed, and set the value of the start delay time SDT to the value of the first delay time DT1. Alternatively, the control unit 102 may acquire the first delay time DT1 each time a substrate processing is performed, and update the start delay time SDT before the next substrate processing is performed.

[0220] 1 to 7, 9, 10, 21, and 22, the fourth embodiment of the present invention has been described. According to this embodiment, it is possible to prevent an increase in the supply time of the first chemical liquid to the substrate W due to the first delay time DT1. Therefore, it is possible to prevent the occurrence of defects due to an increase in the supply time of the first chemical liquid (previous processing liquid) to the substrate W.

[0221] For example, if the substrate processing with the first chemical liquid is an etching process for flattening the top surface of the substrate W, if the time during which the first chemical liquid is supplied to the substrate W is longer than the length of the first predetermined time T1, the thickness of the substrate W may become thinner than the target thickness. Therefore, the characteristics of a device manufactured using the substrate W may not be the desired characteristics.

[0222] Furthermore, if the substrate W is a patterned wafer and the substrate processing with the first chemical liquid is an etching process for removing a native oxide film, if the supply time of the first chemical liquid to the substrate W is longer than the length of the first predetermined time T1, the silicon oxide film constituting the pattern may become too thin, and the characteristics of a device manufactured using the substrate W may not be as desired. Furthermore, if the silicon oxide film constituting the pattern becomes too thin, the pattern may easily collapse.

[0223] Furthermore, if metal wiring is exposed at the bottom of the grooves of the pattern, the first chemical liquid removes the native oxide film covering the metal wiring. However, if the supply time of the first chemical liquid to the substrate W is longer than the first predetermined time T1, the metal wiring may be etched, and the electrical characteristics of a device manufactured using the substrate W may not be as desired.

[0224] According to the present embodiment, an increase in the supply time of the first chemical liquid to the substrate W due to the first delay time DT1 can be suppressed, and therefore the supply time of the first chemical liquid to the substrate W is unlikely to become longer than the length of the first predetermined time T1. Therefore, for example, the occurrence of the above-mentioned defects can be suppressed.

[0225] When the first substrate processing is performed, the timing of sending the open signal to the first valve VA1 cannot be adjusted by the start delay time SDT, so the first substrate W may be a dummy wafer.

[0226] The embodiments of the present invention have been described above with reference to the drawings (FIGS. 1 to 22). However, the present invention is not limited to the above embodiments and can be embodied in various forms without departing from the spirit of the present invention. Furthermore, the components disclosed in the above embodiments can be modified as appropriate. For example, some of the components shown in one embodiment may be added to the components of another embodiment, or some of the components shown in one embodiment may be deleted from the embodiment.

[0227] The drawings mainly show each component in a schematic manner to facilitate understanding of the invention, and the thickness, length, number, spacing, etc. of each component shown in the drawings may differ from the actual ones due to the convenience of creating the drawings. Furthermore, the configuration of each component shown in the above embodiment is merely an example and is not particularly limited, and it goes without saying that various modifications are possible within a range that does not substantially deviate from the effects of the present invention.

[0228] Next, modifications of the embodiments (embodiments 1 to 4) described with reference to FIGS. 1 to 22 will be described.

[0229] (1) In the embodiment described with reference to FIGS. 1 to 22, the imaging device 110 detected that the processing liquid (first rinse liquid, second rinse liquid, and second chemical liquid, or first chemical liquid, first rinse liquid, second rinse liquid, and second chemical liquid) was ejected from the outlet (second outlet 42a to fourth outlet 44a, or first outlet 41a to fourth outlet 44a) of the nozzle (second nozzle 42 to fourth nozzle 44, or first nozzle 41 to fourth nozzle 44). However, if the member (material) constituting the nozzle is a transparent member (transparent material), the imaging device 110 may detect that the processing liquid has reached the outlet of the nozzle as the start of ejection of the processing liquid.

[0230] 23 is a diagram showing a first modified example of the substrate processing apparatus 100 according to the embodiment described with reference to FIGS. 1 to 22. Specifically, FIG. 23 shows an image SG captured when the first rinse liquid reaches the second discharge port 42a. As shown in FIG. 23, when the member (material) constituting the second nozzle 42 is a transparent member (transparent material), the imaging device 110 can detect that the first rinse liquid has reached the discharge port of the second nozzle 42 (second discharge port 42a).

[0231] When detecting that the first rinse liquid has reached the discharge port of the second nozzle 42, the first image processing area KA1 may be set to an area that captures the second nozzle 42 from its base end to its tip end. The horizontal width of the first image processing area KA1 may be set to be wider than the width of the second nozzle 42. The vertical length of the first image processing area KA1 may be set to be approximately the same as the length of the second nozzle 42. The other image processing areas KA (second image processing area to fourth image processing area) are also set in the same manner as the first image processing area KA1.

[0232] (2) In the embodiment described with reference to FIGS. 1 to 22, the imaging device 110 detected that the processing liquid (first rinse liquid, second rinse liquid, and second chemical liquid, or first chemical liquid, first rinse liquid, second rinse liquid, and second chemical liquid) was ejected from the outlet (second outlet 42a to fourth outlet 44a, or first outlet 41a to fourth outlet 44a) of the nozzle (second nozzle 42 to fourth nozzle 44, or first nozzle 41 to fourth nozzle 44). However, if the member (material) constituting the nozzle is a transparent member (transparent material), the imaging device 110 may detect that the processing liquid has reached a position RL in the vicinity of the outlet of the nozzle as the start of ejection of the processing liquid.

[0233] FIG. 24 is a diagram illustrating a second modified example of the substrate processing apparatus 100 according to the embodiment described with reference to FIGS. 1 to 22. Specifically, FIG. 24 illustrates an image SG captured when the first rinse liquid reaches the neighborhood RL of the second outlet 42a. As illustrated in FIG. 24, when the member (material) constituting the second nozzle 42 is a transparent member (transparent material), the imaging device 110 can detect that the first rinse liquid has reached the neighborhood RL of the outlet (second outlet 42a) of the second nozzle 42. Here, the neighborhood RL of the second outlet 42a indicates, for example, a range from the tip (second outlet 42a) of the second nozzle 42 that is approximately the same as the range L from the tip to the base end of the second nozzle 42, or a range narrower toward the tip of the second nozzle 42. The neighborhoods RL of the other outlets (first outlet 41a, third outlet 43a, and fourth outlet 44a) are similar to the neighborhood RL of the second outlet 42a.

[0234] When detecting that the first rinse liquid has reached the vicinity RL of the discharge port of the second nozzle 42, the first image processing area KA1 may be set to an area that captures the area from the base end to the tip end of the second nozzle 42. The other image processing areas KA (second image processing area to fourth image processing area) are set in the same manner as the first image processing area KA1.

[0235] (3) In the embodiment described with reference to Figures 1 to 22, the substrate processing apparatus 100 includes the imaging device 110 as the detection unit, but the detection unit is not limited to the imaging device 110 as long as it can detect the start of discharging of the processing liquid. For example, the substrate processing apparatus 100 may include a photosensor 120 as the detection unit.

[0236] FIG. 25 is a diagram showing a third modified example of the substrate processing apparatus 100 according to the embodiment described with reference to FIGS. 1 to 22. The substrate processing apparatus 100 shown in FIG. 25 includes a photosensor 120 as a detection unit. Specifically, the substrate processing apparatus 100 includes three photosensors 120. The three photosensors 120 include a photosensor 120 provided for the second nozzle 42, a photosensor 120 provided for the third nozzle 43, and a photosensor 120 provided for the fourth nozzle 44. FIG. 25 shows the photosensor 120 provided for the second nozzle 42. Hereinafter, the photosensor 120 provided for the second nozzle 42 may be referred to as a "photosensor 121."

[0237] 25, the photosensor 121 irradiates the region below the second nozzle 42 positioned at the standby position with light and receives the light reflected from the region below the second nozzle 42. Therefore, when the first rinse liquid is discharged from the outlet (second outlet 42a) of the second nozzle 42 and passes through the region below the second nozzle 42, the light received by the photosensor 121 changes. Therefore, the photosensor 121 can detect that the first rinse liquid has been discharged from the outlet of the second nozzle 42.

[0238] Similar to photosensor 121, photosensor 120 provided for third nozzle 43 also detects that the second rinse liquid has been discharged from the outlet (third outlet 43a) of third nozzle 43. Similar to photosensor 121, photosensor 120 provided for fourth nozzle 44 also detects that the second chemical liquid has been discharged from the outlet (fourth outlet 44a) of fourth nozzle 44 located at the processing position. Furthermore, similar to imaging device 110 described in the second embodiment, photosensor 120 provided for fourth nozzle 44 may detect that the first chemical liquid has been discharged from the outlet (first outlet 41a) of first nozzle 41 located at the processing position.

[0239] 23, when the member (material) constituting the nozzles (first nozzle 41 to fourth nozzle 44) is a transparent member (transparent material), photosensor 120 may detect that the processing liquid (first chemical liquid, first rinse liquid, second rinse liquid, second chemical liquid) has reached the nozzle outlets (first outlet 41 a to fourth outlet 44 a). Alternatively, when the member (material) constituting the nozzles (first nozzle 41 to fourth nozzle 44) is a transparent member (transparent material), photosensor 120 may detect that the processing liquid (first chemical liquid, first rinse liquid, second rinse liquid, second chemical liquid) has reached the vicinity RL of the nozzle outlets (first outlet 41 a to fourth outlet 44 a).

[0240] 26 is a diagram showing a fourth modified example of the substrate processing apparatus 100 according to the embodiment described with reference to FIGS. 1 to 22. As shown in FIG. 26, when the member (material) constituting the second nozzle 42 is a transparent member (transparent material), the photosensor 121 may irradiate the area RL near the second discharge port 42a with light and receive reflected light from the area RL near the second discharge port 42a. When the member (material) constituting the second nozzle 42 is a transparent member (transparent material), the light received by the photosensor 121 changes as the first rinse liquid passes through the area RL near the second discharge port 42a. Therefore, the photosensor 121 can detect that the first rinse liquid has reached the area RL near the discharge port of the second nozzle 42.

[0241] Similar to photosensor 121, photosensor 120 provided for third nozzle 43 may also detect that the second rinse liquid has reached the vicinity RL of third discharge port 43a. Similar to photosensor 121, photosensor 120 provided for fourth nozzle 44 may also detect that the second chemical liquid has reached the vicinity RL of fourth discharge port 44a. Furthermore, photosensor 120 provided for fourth nozzle 44 may detect that the first chemical liquid has reached the vicinity RL of first discharge port 41a.

[0242] (4) In the embodiment described with reference to Figures 1 to 22, the substrate processing apparatus 100 includes an imaging device 110 as a detection unit, but the substrate processing apparatus 100 may also include a capacitance sensor 130 as a detection unit.

[0243] 27 and 28 are diagrams showing a fifth modified example of the substrate processing apparatus 100 according to the embodiment described with reference to FIGS. 1 to 22. The substrate processing apparatus 100 shown in FIGS. 27 and 28 includes a capacitance sensor 130 as a detection unit. The capacitance sensor 130 generates an electric field in a detection region, and detects the detection target based on a change in capacitance when the detection target enters the electric field.

[0244] More specifically, the substrate processing apparatus 100 is equipped with three capacitance sensors 130. The three capacitance sensors 130 include a capacitance sensor 130 installed in the second nozzle 42, a capacitance sensor 130 installed in the third nozzle 43, and a capacitance sensor 130 installed in the fourth nozzle 44. FIGS. 27 and 28 show the capacitance sensor 130 installed in the second nozzle 42. Hereinafter, the capacitance sensor 130 installed in the second nozzle 42 may be referred to as a "capacitance sensor 131."

[0245] 27 and 28, the capacitance sensor 131 is installed in the vicinity RL of the second discharge port 42a. The capacitance sensor 131 generates an electric field in the vicinity RL of the second discharge port 42a. Therefore, the capacitance sensor 131 detects the first rinse liquid when the first rinse liquid passes through the vicinity RL of the second discharge port 42a. Therefore, the capacitance sensor 131 can detect that the first rinse liquid has reached the vicinity RL of the second discharge port 42a.

[0246] The capacitance sensor 130 provided for the third nozzle 43 is also provided in the vicinity RL of the third discharge port 43a, similar to the capacitance sensor 131, and detects that the second rinse liquid has reached the vicinity RL of the third discharge port 43a. The capacitance sensor 130 provided for the fourth nozzle 44 is also provided in the vicinity RL of the fourth discharge port 44a, similar to the capacitance sensor 131, and detects that the second chemical liquid has reached the vicinity RL of the fourth discharge port 44a.

[0247] The substrate processing apparatus 100 may further include a capacitance sensor 130 installed in the first nozzle 41. Like the capacitance sensor 131, the capacitance sensor 130 installed in the first nozzle 41 is installed in the vicinity RL of the first discharge port 41a, and detects that the first chemical liquid has reached the vicinity RL of the first discharge port 41a.

[0248] (5) In the embodiment described with reference to Figures 1 to 22, a clamping chuck that clamps the substrate W has been described as a configuration for holding the substrate W. However, the configuration for holding the substrate W is not particularly limited as long as it can hold the substrate W horizontally. For example, the substrate holder 3 may be a vacuum chuck or a Bernoulli chuck.

[0249] 1 to 22, the second nozzle 42 moves from the standby position to the processing position, but the second nozzle 42 does not have to move from the standby position to the processing position. In other words, the second nozzle 42 may supply the first rinse liquid to the substrate W from the standby position.

[0250] (7) In the embodiment described with reference to FIGS. 1 to 22, the imaging device 110 is disposed outside the processing chamber 2. However, the imaging device 110 may be disposed inside the processing chamber 2.

[0251] (8) In the embodiment described with reference to FIGS. 1 to 22, the control unit 102 measures time. However, the substrate processing apparatus 100 may include a timer circuit. In this case, the control unit 102 causes the timer circuit to measure time. The timer circuit may be provided in the control device 101.

[0252] (9) In the embodiment described with reference to FIGS. 1 to 22, the substrate processing apparatus 100 includes one imaging device 110. However, the substrate processing apparatus 100 may include a plurality of imaging devices 110. [Industrial Applicability]

[0253] The present invention is useful for a substrate processing apparatus and a substrate processing method, and therefore has industrial applicability. [Explanation of symbols]

[0254] 2: Processing room 3: Board holding part 41: First nozzle 41a: 1st discharge port 42: Second nozzle 42a: 2nd outlet 43: 3rd nozzle 43a: 3rd outlet 44: 4th nozzle 44a: 4th outlet 100: Substrate processing apparatus 102: Control unit 110: Imaging device 120: Photo sensor 121: Photo sensor 130: Capacitive sensor 131: Capacitive sensor ADT: Additional delay time DT1: First delay time DT2: Second delay time DT3: Third delay time DT4: Fourth delay time RL: Nearest Neighbor SDT: Start delay time T1: First preset time T2: Second preset time T3: Third preset time T4: 4th preset time T5: 5th predetermined time VA1: First valve VA2: Second valve VA3: 3rd valve VA4: 4th valve W: Substrate

Claims

1. A substrate processing method for processing a substrate with a processing liquid, comprising: holding the substrate; a step of starting to supply the preceding processing liquid to the preceding nozzle and discharging the preceding processing liquid from a discharge port of the preceding nozzle toward the held substrate; a step of starting to supply a subsequent processing liquid to a subsequent nozzle and discharging the subsequent processing liquid from a discharge port of the subsequent nozzle toward the held substrate; a detection step of detecting the start of ejection of the following processing liquid from the ejection port of the following nozzle; a stopping step of stopping the supply of the preceding processing liquid to the preceding nozzle in response to the detection of the start of ejection of the following processing liquid; A substrate processing method comprising:

2. 2. The substrate processing method according to claim 1, wherein the detecting step detects that the subsequent processing liquid has been discharged from the discharge port of the subsequent nozzle.

3. 2. The substrate processing method according to claim 1, wherein the detecting step detects that the trailing processing liquid has reached the discharge opening of the trailing nozzle.

4. 2. The substrate processing method according to claim 1, wherein the detecting step detects that the trailing processing liquid has reached a position near the discharge port of the trailing nozzle.

5. 5. The substrate processing method according to claim 2, wherein the detection step detects the start of the discharge of the subsequent processing liquid by an imaging device.

6. 5. The substrate processing method according to claim 2, wherein the detection step detects the start of the discharge of the subsequent processing liquid by a photosensor.

7. The substrate processing method according to claim 4 , wherein the detection step detects the start of the discharge of the subsequent processing liquid by a capacitance sensor.

8. 8. The substrate processing method according to claim 1, wherein the stopping step stops the supply of the preceding processing liquid to the preceding nozzle after a predetermined time has elapsed since the start of the ejection of the following processing liquid was detected.

9. 9. The substrate processing method according to claim 1, further comprising a step of adjusting a timing for starting the supply of the preceding processing liquid based on a supply time indicating a time interval from the start of the supply of the preceding processing liquid to the stop of the supply of the preceding processing liquid by the stopping step, and a predetermined time that determines a time interval for supplying the preceding processing liquid.

10. The substrate processing method according to claim 1 , further comprising the step of acquiring timing for stopping the supply of the preceding processing liquid.

11. 11. The substrate processing method according to claim 1, further comprising the step of detecting a start of discharge of the preceding processing liquid from the discharge port of the preceding nozzle.

12. A substrate processing apparatus for processing a substrate with a processing liquid, a substrate holder for holding the substrate; a preceding nozzle having a discharge port and configured to discharge a preceding processing liquid from the discharge port toward the substrate held by the substrate holding unit; a preceding valve that controls supply of the preceding processing liquid to the preceding nozzle and stop of supply of the preceding processing liquid to the preceding nozzle; a trailing nozzle having a discharge port and configured to discharge a trailing processing liquid from the discharge port toward the substrate held by the substrate holding unit; a trailing valve that controls the supply of the trailing processing liquid to the trailing nozzle and the stop of the supply of the trailing processing liquid to the trailing nozzle; a detection unit that detects the start of ejection of the following processing liquid from the ejection port of the following nozzle; a control unit that controls the preceding valve to start supplying the preceding processing liquid to the preceding nozzle, and then controls the following valve to start supplying the following processing liquid to the following nozzle; Equipped with The control unit executes a closing operation control process to control the preceding valve to stop the supply of the preceding processing liquid in response to the detection unit detecting the start of the discharge of the following processing liquid.

13. The substrate processing apparatus according to claim 12 , wherein the detection unit detects that the subsequent processing liquid has been discharged from the discharge port of the subsequent nozzle.

14. The substrate processing apparatus according to claim 12 , wherein the detection unit detects that the trailing processing liquid has reached the discharge port of the trailing nozzle.

15. The substrate processing apparatus according to claim 12 , wherein the detection unit detects that the subsequent processing liquid has reached a position near the discharge port of the subsequent nozzle.

16. The substrate processing apparatus according to claim 13 , wherein the detection unit includes an imaging device that detects the start of the discharge of the subsequent processing liquid.

17. The substrate processing apparatus according to claim 13 , wherein the detection unit includes a photosensor that detects the start of the discharge of the subsequent processing liquid.

18. The substrate processing apparatus according to claim 15 , wherein the detection unit includes a capacitance sensor that detects the start of the discharge of the subsequent processing liquid.

19. 19. The substrate processing apparatus according to claim 12, wherein the control unit controls the preceding valve to stop the supply of the preceding processing liquid after a predetermined time has elapsed since the detection unit detected the start of the discharge of the following processing liquid.

20. 20. The substrate processing apparatus according to claim 12, wherein the control unit adjusts the timing of starting the supply of the preceding processing liquid based on a supply time indicating the time interval from the start of supply of the preceding processing liquid to the stop of supply of the preceding processing liquid by the closing operation control process, and a predetermined time that determines the time interval for supplying the preceding processing liquid.

21. The substrate processing apparatus according to claim 12 , wherein the control unit acquires a timing for stopping the supply of the preceding processing liquid.

22. 22. The substrate processing apparatus according to claim 12, wherein the detection unit detects the start of discharge of the preceding processing liquid from the discharge port of the preceding nozzle.

23. a plurality of processing chambers each accommodating the substrate holder, the leading nozzle, and the trailing nozzle; The substrate processing apparatus according to claim 12 , wherein the control unit executes the closing operation control process for each of the processing chambers.

Images