Silicon oxide continuous production equipment and continuous production method

Abstract

To provide continuous production equipment and a continuous production method capable of continuously producing silicon oxide.SOLUTION: According to one embodiment, there is provided a silicon oxide continuous production apparatus 100 including a main chamber part 110 connected to a reactor 10 that generates silicon oxide gas, the apparatus comprising: a condensation part including a cylindrical body having an open surface that is open to a connecting pipe 11 side connected to the reactor; a moving part 120 that moves the condensation part within the main chamber part; and a cooling part 170 configured to be movable forward and backward toward the body within the main chamber part so as to cool the body.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present invention relates to a silicon oxide continuous production facility and a method for continuous production, and more particularly to a silicon oxide production facility and a method for producing silicon oxide for secondary batteries. [Background technology]

[0002] Recently, with the rapid rise of electric vehicles, expectations for lithium-ion secondary batteries are increasing, with demands for improved fast charging characteristics while maintaining existing capacity.

[0003] Among these, technological development and demand for lithium secondary batteries are rapidly increasing, and lithium secondary batteries with higher energy density than conventional batteries are being sought. To increase the energy density of secondary batteries, research and development is being conducted to increase the capacity of positive and negative electrode materials, increase the density of electrode plates, make separators thinner, and increase charge and discharge voltages, and research and development is also being conducted to increase the capacity of positive and negative electrode materials.

[0004] Among the negative electrode materials that determine the capacity of lithium secondary batteries, silicon-based materials are the most promising materials for increasing capacity, and active development is underway.

[0005] The silicon-based anode material manufacturing equipment includes a reactor for gasifying silicon oxide raw material and a condenser for condensing the gas produced in the reactor into a solid phase, the reactor and the condenser being connected by piping.

[0006] The condensation reaction must be carried out in a designated space to obtain a deposition layer as a material. However, there are cases where vapor condenses at the inlet of the condenser or pipes, forming a deposition layer. This can lead to problems such as the inability to produce continuously and the need to stop the equipment to remove the deposition layer. [Prior art documents] [Patent documents]

[0007] [Patent Document 1] Korean Patent Registration No. 10-1988358 Summary of the Invention [Problem to be solved by the invention]

[0008] The present invention has been made to solve the above-mentioned problems of the prior art, and has as its object to provide continuous production equipment and a method capable of continuously producing silicon oxide. [Means for solving the problem]

[0009] In order to achieve the above object, the present invention provides the following equipment and method for continuously producing silicon oxide.

[0010] In one embodiment, the present invention provides an apparatus for continuously producing silicon oxide, comprising a main chamber connected to a reactor for producing silicon oxide gas, a condenser including a cylindrical main body having an open surface that opens to a connecting pipe connected to the reactor; a moving unit that moves the condenser within the main chamber; and a cooling unit configured to be movable toward and away from the main body within the main chamber so as to cool the main body.

[0011] In one embodiment, the main chamber unit may be connected to a vacuum generating unit, and the condenser unit may further include a frame connected to the main body.

[0012] In one embodiment, the main body may have a cylindrical shape with a central axis extending in a horizontal direction, and the cross-sectional area of ​​the main body may be larger than the cross-sectional area of ​​the connecting pipe.

[0013] In one embodiment, the cooling section may include a cooling plate through which a cooling fluid passes and a moving means for moving the cooling plate in the horizontal direction parallel to the central axis of the main body, and the moving means may be configured to move the cooling plate so that it contacts the back surface opposite the open surface when the silicon oxide gas flows into the main body of the condenser section.

[0014] In one embodiment, the cooling plate may include a first uneven portion, and the rear surface of the main body may include a second uneven portion that is molded into the first uneven portion when the cooling plate contacts the rear surface.

[0015] In one embodiment, the cooling section may include a plurality of guide rods extending in the horizontal direction to guide the cooling plate.

[0016] In one embodiment, a gas splash prevention plate may be included inside the main chamber portion, surrounding the cooling plate.

[0017] In one embodiment, the moving unit may include a plurality of rolls disposed under the frame and a driving means for rotating the rolls, and may also include a flow guide plate extending into the main chamber unit around the connecting pipe.

[0018] In one embodiment, the frame has a rectangular parallelepiped shape surrounding the main body, and a gas guide plate having a through hole formed therein may be disposed on a surface of the frame facing the open surface, and the through hole may have a different diameter at the front surface of the gas guide plate than at the back surface of the gas guide plate.

[0019] In one embodiment, the main chamber unit includes first and second gate valves disposed on both sides of the condenser unit in a moving direction in which the condenser unit is moved by the moving unit, and a loading chamber may be connected to an outer side of the first gate valve, and a stripping preparation chamber may be connected to an outer side of the second gate valve.

[0020] In one embodiment, the loading chamber and the removal preparation chamber may be connected to a vacuum generating unit, and the main chamber may include a scraper disposed above a connecting portion to which the connecting pipe is connected in the main chamber and configured to be movable in an up and down direction, and a collecting portion disposed below the scraper.

[0021] In one embodiment, the present invention provides a method for continuously producing silicon oxide, including: a first body movement step of moving a cylindrical body to a condensation position inside a main chamber section under vacuum; a cooling unit approaching step of bringing at least a part of a cooling unit close to one side of the body moved from outside the body to the condensation position; a condensation step of condensing silicon oxide gas in the reactor inside the body; a cooling unit detaching step of detaching the cooling unit from the body; and a second body movement step of moving the body from the condensation position to the cooling position.

[0022] In one embodiment, the method may further include a loading chamber introduction step, which is performed before the first moving step of the main body, of introducing the main body into a loading chamber under atmospheric pressure; an evacuation step of evacuating the loading chamber into which the main body has been introduced via a vacuum generating unit; and a main chamber introduction step of opening a first gate valve between the evacuated loading chamber and the main chamber and introducing the main body into the main chamber.

[0023] In one embodiment, the method may further include a desorption preparation chamber introduction step, which is performed after the second moving step, of opening a second gate valve between the main chamber and the desorption preparation chamber and introducing the body into the evacuated desorption preparation chamber; and a discharge step of closing the second gate valve, adjusting the desorption preparation chamber to atmospheric pressure, and then discharging the body to the outside.

[0024] In one embodiment, the method further includes a removal step, which is performed after the discharge step, of removing condensation condensed on the main body; and the main body from which the condensation has been removed can be subjected to the loading chamber introduction step again. [Effects of the Invention]

[0025] With the above-described configuration, the present invention can provide a continuous production facility and method that can continuously produce silicon oxide. [Brief explanation of the drawings]

[0026] [Figure 1] 1 is a schematic diagram of a silicon oxide continuous production facility according to an embodiment of the present invention. [Figure 2] 1 is a schematic perspective view of a silicon oxide continuous production facility according to an embodiment of the present invention. [Figure 3] FIG. 2 is a perspective view of a condensation section of the continuous production facility of FIG. 1. [Figure 4] 2 is a schematic perspective view of the cooling section seen from inside the main chamber section in the continuous production equipment of FIG. 1. FIG. [Figure 5] 2 is a schematic cross-sectional view of a main chamber portion of the continuous manufacturing equipment of FIG. 1. [Figure 6] 2 is a schematic cross-sectional view of the main chamber of the continuous production equipment of FIG. 1 at a condensation position. [Figure 7a] 2 is a schematic cross-sectional view of a gas guide plate of the condenser section of FIG. 1. [Figure 7b] 2 is a schematic cross-sectional view of a gas guide plate of the condenser section of FIG. 1. [Figure 8] 1 is a flowchart of a method for continuously producing silicon oxide according to one embodiment of the present invention. DETAILED DESCRIPTION OF THE INVENTION

[0027] Hereinafter, preferred embodiments will be described in detail with reference to the accompanying drawings so that those skilled in the art can easily practice the present invention. However, in describing preferred embodiments of the present invention in detail, if it is determined that a detailed description of related well-known functions or configurations may unnecessarily obscure the gist of the present invention, such detailed description will be omitted. Furthermore, the same reference numerals will be used throughout the drawings to refer to parts having similar functions and actions. In this specification, terms such as "top," "upper," "upper surface," "bottom," "lower," "bottom surface," and "side" are used based on the drawings and may actually differ depending on the direction in which components are arranged.

[0028] Furthermore, throughout the specification, when a part is referred to as being "connected" to another part, this includes not only "directly connected" but also "indirectly connected" through another component in between. Furthermore, unless otherwise specified, "comprising" a component does not exclude other components, but means that other components may also be included.

[0029] An apparatus for continuously producing silicon oxide according to one embodiment of the present invention is shown in Figures 1 to 6. Figure 1 shows a schematic diagram of an apparatus for continuously producing silicon oxide according to one embodiment of the present invention, Figure 2 shows a schematic perspective view of an apparatus for continuously producing silicon oxide according to one embodiment of the present invention, Figure 3 shows a perspective view of the condensation section of the continuous production equipment of Figure 1, Figure 4 shows a schematic perspective view of the cooling section as seen from the inside of the main chamber section of the continuous production equipment of Figure 1, Figure 5 shows a schematic cross-sectional view of the main chamber section of the continuous production equipment of Figure 1, and Figure 6 shows a schematic cross-sectional view of the main chamber section of the continuous production equipment of Figure 1 at the condensation position.

[0030] An apparatus 100 for continuously producing silicon oxide according to one embodiment of the present invention includes a main chamber 110 connected to a reactor 10 that produces silicon oxide gas, a condensation section 200 including a cylindrical main body 210 having an open surface that opens toward a connecting pipe 11 connected to the reactor 10 so that the silicon oxide gas flows into and condenses within the main chamber 110, a movement section 120 that moves the condensation section 200 within the main chamber 110, and a cooling section 170 that is configured to be movable within the main chamber 110 so as to cool the main body 210 when the silicon oxide gas flows into the condensation section 200.

[0031] The silicon oxide continuous production apparatus 100 according to one embodiment of the present invention is an apparatus that receives a supply of silicon oxide gas produced from the reactor 10 and condenses it to produce silicon oxide. The configuration of the reactor 10 is not limited as long as it can produce silicon oxide gas.

[0032] 1, the reactor 10 is connected to a raw material supply unit 20 and includes a heater (not shown) to generate gas by heating the raw material supplied from the raw material supply unit 20. The reactor 10 generates gas in an insulated state from the outside by a heat insulating layer 17, and a heater 15 is disposed in the connecting pipe 11 connecting the reactor 10 to the main chamber unit 110 to prevent condensation inside the pipe.

[0033] In the present invention, the main chamber 110 is configured to supply gas through the connecting pipe 11 when the condenser 200 enters, and to discharge the gas to the outside of the main chamber 110 to remove condensate when condensation in the condenser 200 is completed. The main chamber 110 includes a connecting part 112 to which the connecting pipe 11 of the reactor 10 is connected, and a housing 111 forming an internal space in which the condenser 200 is accommodated. The housing 111 may be insulated, and the internal space is connected to the vacuum forming part 300 to maintain internal vibration while connected to the reactor 10.

[0034] 1, the main chamber 110 also includes a moving unit 120 that moves the condenser 200, and a cooling unit 170 that contacts the condenser 200 when the condenser 200 reaches the condensing position and cools the condenser 200. The main chamber 110 also includes a flow guide plate 113 that surrounds the connecting unit 112 and extends into the internal space to guide the incoming gas to move into the main body 210 of the condenser 200, and a gas scattering prevention plate 115 that surrounds the cooling unit 170 and extends into the internal space to block the flow of gas to the cooling unit 170.

[0035] The loading chamber 130 is connected to one side of the main chamber 110, and the stripping preparation chamber 150 is connected to the other side. A first gate valve 140 is disposed between the loading chamber 130 and the main chamber 110, and a second gate valve 160 is disposed between the stripping preparation chamber 150 and the main chamber 110. Movement units 133 and 153 for moving the condenser 200 may be provided at the inlet side of the loading chamber 130 and the outlet side of the stripping preparation chamber 150, and the loading chamber 130 and the stripping preparation chamber 150 include doors 135 to allow the condenser 200 to enter and exit the chambers.

[0036] The loading chamber 130 and the removal preparation chamber 150 are also connected to the vacuum generator 300, similar to the main chamber 110. The loading chamber 130 is disposed in front of the condenser 200 in the main chamber 110. When the condenser 200 enters the loading chamber 130, the air inside the loading chamber 130 is removed through the vacuum generator 300 to create a vacuum, and then the first gate valve 140 is opened to allow the condenser 200 to be introduced into the main chamber 110 while the internal vacuum of the main chamber 110 is maintained.

[0037] Similarly, in the desorption preparation chamber 150, the second gate valve 160 is opened in a vacuum state to transfer the condenser 200 from the main chamber 110, and the second gate valve 160 is closed to supply air to the desorption preparation chamber 150, and then the condenser 200 is discharged to the outside. Therefore, the present invention includes the loading chamber 130 and the desorption preparation chamber 150, and the condenser 200 can be introduced and discharged while the main chamber 110 maintains a vacuum state.

[0038] The main chamber 110 includes a moving unit 120 therein that moves the condenser 200 from the loading chamber 130 side to the removal preparation chamber 150 side. In this embodiment, the main chamber 110 includes a space that can accommodate three condensers 200, and the space is referred to as a preheating position A1, a condensing position A2, and a cooling position A3 of the condenser 200 in the direction from the loading chamber 130 to the removal preparation chamber 150. Specifically, as shown in FIG. 1 , the position of the condenser 200 adjacent to the loading chamber 130 within the main chamber 110 is referred to as the preheating position A1. When the condenser 200 is positioned at the center within the main chamber 110, the position of the condenser 200 is referred to as the condensing position A2, and gas from the connecting pipe 11 is supplied to the condenser 200 from the condensing position A2. The position of the condenser 200 adjacent to the removal preparation chamber 150 within the main chamber 110 is referred to as the cooling position A3.

[0039] However, it is not essential that the main chamber unit 110 has a space large enough to accommodate three condensers 200, and the main chamber unit 110 may be large enough to position the condenser 200 at the condensation position A2. The preheating position A1 and the cooling position A3 may be located inside the loading chamber 130 or the detachment preparation chamber 150. The preheating position A1 and the cooling position A3 may be located inside the loading chamber 130 or the detachment preparation chamber 150, rather than inside the main chamber unit 110. The steps performed when the condenser 200 is located at the preheating position A1, the condensation position A2, or the cooling position A3 will be described later. If necessary, more than three condensers 200 may be accommodated inside the main chamber unit 110.

[0040] At the condensation position A2, a cooling unit 170 is disposed behind the condenser 200, i.e., at a position opposite to the position of the connecting pipe 11. The cooling unit 170 includes a cooling plate 175 and a moving means 171 connected to the cooling plate 175 to move the cooling plate 175 forward and backward. The cooling plate 175 is connected to a cooling water supply unit 190. A cooling fluid circulates through the cooling plate 175 to cool the cooling plate 175. The cooling plate 175 comes into contact with the outer surface of the rear surface 213 of the main body 210 of the condenser 200, thereby cooling the rear surface 213 of the main body 210 and condensing gas on the inner surface of the rear surface 213.

[0041] Meanwhile, in the main chamber 110, a removal unit 180 is disposed above the connection unit 112 to which the connecting pipe 11 is connected, for removing condensate that forms at the end of the connecting pipe 11 and reduces the cross-sectional area of ​​the connecting pipe 11.

[0042] Each component will be described in more detail with reference to FIGS.

[0043] The moving unit 120 installed under the main chamber 110 includes a plurality of rolls 121 and a driving means 125 for rotating the rolls 121. The driving means 125 may be a motor, and the driving means 125 and the plurality of rolls 121 are connected by a power transmission means, such as a chain, a belt, or a gear, and the rolls 121 rotate according to the driving operation of the driving means 125, so that the condensing unit 200 seated on the rolls 121 can move.

[0044] The condenser 200 includes a cylindrical main body 210, a rectangular parallelepiped frame 220, and a seat 230 disposed under the main body 210 so that the main body 210 is connected to the frame 220 while lying down with one side of the main body 210 open. The central axis C2 (see FIG. 5) of the main body 210 is positioned horizontally along the extension direction of the connecting pipe 11. The diameter of the main body 210 is larger than the diameter of the connecting pipe 11.

[0045] A gas guide plate 225 is disposed on the frame 220 on a surface where the open surface of the body 210 is located, and through holes 212 are formed in the gas guide plate 225 to allow gas to flow into the open surface. The diameter of the through holes 212 may be smaller than the diameter of the body 210, but is larger than the diameter of the connecting pipe 11. Since the condenser 200 includes the gas guide plate 225 and the main chamber 110 includes the flow guide plate 113, the gas supplied from the connecting pipe 11 is allowed to flow into the body 210 without flowing into other spaces inside the main chamber 110.

[0046] An approximately triangular ring metal fitting 217 is connected to the upper side of the main body 210 to hang a hoist or crane when the condensation part 200 is discharged outside the equipment 100 and moved to remove the condensate.

[0047] The main body 210 has a cylindrical shape with a horizontal central axis C2, one side open, and the other side, i.e., the back surface 213, closed. The inner surface of the back surface 213 serves as a condensation surface where the gas condenses, and the outer surface of the back surface 213 comes into contact with the cooling plate 175 of the cooling unit 170, allowing condensation to occur on the inner surface. The outer surface of the back surface 213 has alternating annular recesses 214 and protrusions 215, which have shapes corresponding to the protrusions 176 and 177 of the cooling plate 175, so that the recesses 176 and 177 on the front surface of the cooling plate 175 are molded to the recesses 214 and 215 on the outer surface, thereby increasing the heat transfer area. In this case, the uneven portions 176 and 177 of the cooling plate 175 can be called first uneven portions, and the uneven portions 214 and 215 of the rear surface 213 can be called second uneven portions.

[0048] Meanwhile, the continuous manufacturing equipment 100 according to one embodiment of the present invention includes a control unit 400, which moves the condenser unit 200 inserted into the main chamber unit 110 via the driving means 125 of the moving unit 120. To monitor whether the condenser unit 200 is positioned at a correct position, a plurality of position detection sensors 128 may be disposed inside the main chamber unit 110. The position detection sensors 128 may be non-contact sensors as shown in FIG. 5 or contact sensors. The condenser unit 200 can be positioned at a particularly accurate condensation position A2 via the position detection sensors 128.

[0049] The cooling unit 170 may have a moving means 171 disposed on the outside thereof, with the cooling plate 175 side facing the inner space of the main chamber 110, for moving the cooling plate 175 in a horizontal direction. A part of the moving means 171 is fixed to the housing 111, and a part of the moving means 171 is connected to the cooling plate 175, so that the cooling plate 175 can be moved relative to the housing 111. In one embodiment, the moving means 171 includes a motor and a rotating shaft 172 having a screw thread connected to the motor. The cooling unit 170 includes a plate 173 connected to the rotating shaft 172 and moving in accordance with the rotation of the rotating shaft 172, and a plurality of guide rods 174 connected to the cooling plate 175 and extending horizontally to guide the movement, so that the rotation of the motor is switched to a forward and backward movement of the cooling plate 175. However, the present invention is not limited thereto, and a cylinder that directly realizes forward and backward movement may be adopted as the moving means.

[0050] Meanwhile, a gas scattering prevention plate 115 (see FIG. 5) is disposed in the main chamber 110 to surround the cooling plate 175 of the cooling unit 170 so as to prevent gas from adhering to the surface of the cooling plate 175 and condensing.

[0051] The first uneven portions 176, 177 of the cooling section 170 are formed in a shape corresponding to the second uneven portions 214, 215 of the main body 210, and the position where the central axis C1 of the first uneven portions 176, 177 and the center C2 of the main body 210 are the same can be called the condensation position A2 of the condensation section 200.

[0052] At the condensation position A2, a removal unit 180 is disposed at an upper portion between the condenser 200 and the connecting pipe 11. The removal unit 180 includes a scraper 182 and a collection unit 185 disposed below the scraper 182. The scraper 182 is connected to a scraper driving unit 181 and configured to move up and down in response to driving of the scraper driving unit 181. The scraper 182 moves up and down at a position corresponding to the end of the connecting pipe 11 located at the connecting unit 112 to remove condensate that may form at the end of the connecting pipe 11, thereby enabling smooth supply of gas from the connecting pipe 11.

[0053] The operation of the silicon oxide continuous production apparatus 100 according to one embodiment of the present invention will be described.

[0054] The silicon oxide continuous production apparatus 100 has a structure in which a plurality of condensation units 200 are supplied and discharged. When a certain level of condensation is achieved in a condensation unit 200, the condensation unit 200 is changed without shutting down the apparatus, allowing condensation to continue, thereby enabling continuous production of silicon oxide.

[0055] In addition, for continuous operation, the main chamber 110 includes a loading chamber 130, a removal preparation chamber 150, and first and second gate valves 140 and 160, and the condenser 200 can be loaded and discharged while maintaining a vacuum state.

[0056] The condenser 200 introduced through the loading chamber 130 is introduced into the main chamber 110 by opening the first gate valve 140 after the loading chamber 130 is conditioned to a vacuum atmosphere. In the main chamber 110, the condenser 200 is positioned at the preheating position A1 and is preheated while waiting for the previous condenser 200 to condense at the condensing position A2. No separate heater is provided for preheating, but a heater can be provided if necessary. By preheating, the condenser 200 can limit the area where condensation occurs at the condensing position A2 to the rear surface 213 where the cooling plate 175 contacts.

[0057] When condensation is completed and the previous condenser 200 leaves the condensation position A2, the condenser 200 located at the preheating position A1 is moved to the condensation position A2 by the moving unit 120. When the condenser 200 moves to the condensation position A2, the cooling plate 175 advances toward the condenser 200 and comes into contact with the rear surface 213 of the condenser 200, and heat is released to the cooling plate 175, causing the gas supplied into the condenser 200 to condense on the inner surface of the rear surface 213, forming a condensate. At this time, the removing unit 180 operates to remove the condensate formed in the connecting pipe 11, as necessary.

[0058] Gas continues to be generated in the reactor 10 even while the condenser 200 is moving, but the movement of the condenser 200 does not take a long time, and the flow guide plate 113 and the gas flow plate 225 prevent gas from leaking out of the main body 210 of the condenser 200, allowing for continuous operation. In addition, the cooling plate 175 moves forward and backward to allow condensation to occur in the moving condenser 200, and the gas splash prevention plate 115 is arranged to prevent condensate from forming on the contact surface between the cooling plate 175 and the main body 210.

[0059] When a sufficient amount of time has passed since the condenser 200 was positioned at the condensing position A2, the condenser 200 is deemed to have completed condensation and moves from the condensing position A2 to the cooling position A3. The condenser 200 is cooled naturally while waiting at the cooling position A3, and then passes through the second gate valve 160 and moves to the desorption preparation chamber 150. The desorption preparation chamber 150 is maintained in a vacuum atmosphere when the second gate valve 160 is open, but when the condenser 200 is inserted into the desorption preparation chamber 150 and the second gate valve 160 is closed, air similar to the external atmosphere is introduced. Then, a door (not shown) is opened to discharge the condenser 200 from the desorption preparation chamber 150, and condensate condensed on the rear surface 213 of the condenser 200 is removed.

[0060] In the present invention, the condensate grows from the rear surface 213 of the cylindrical body 210, which is made of a metal material with good conductivity to facilitate cooling via the cooling plate 175. However, since the thermal expansion coefficients of the body 210 and the condensate are different, once the condenser 200 is sufficiently cooled, the condensate breaks inside the cylindrical body 210 due to the difference in thermal expansion coefficients, making it easy to collect the condensate. The cylindrical body 210 can accommodate broken condensate even when horizontal, and even if the condensate breaks at any point, it does not affect collection.

[0061] In this way, the condensate is removed and collected from the condenser 200, and the empty condenser 200 is loaded again from the beginning into the loading chamber 130. Although it is preferable to position the condenser 200 at each position, if there are at least two condensers 200, they can be operated in a continuous process.

[0062] 7a and 7b show schematic cross-sectional views of a gas guide plate 225 according to the present invention. As shown in FIGS. 7a and 7b, the gas guide plate 225 may have a diameter d1 on the connecting pipe 11 side and a diameter d2 on the main body 210 side that are different from each other. That is, the front diameter d1 and the rear diameter d2 of the gas guide plate 225 may be different. If the front diameter d1 is larger than the rear diameter d2, the gas guide plate 225 deforms toward the main body 210. If the rear diameter d2 is larger than the front diameter d1, the gas guide plate 225 deforms toward the connecting pipe 11. This is because, while the gas guide plate 225 is fixed by the frame 220, the gas guide plate 225 deforms as gas flows in from the connecting pipe 11 and its temperature rises. By adjusting the front diameter d1 and the rear diameter d2, the gas guide plate 225 can be deformed to suit the flow of gas from the connecting pipe 11 to the main body 210.

[0063] A flowchart of a method for continuously producing silicon oxide according to one embodiment of the present invention is shown in Fig. 8. The flowchart of Fig. 8 will be described with reference to the apparatus for continuously producing silicon oxide in Fig. 1.

[0064] The method for continuously manufacturing silicon oxide includes a loading chamber introducing step S110 of introducing the condenser 200 into the loading chamber 130; an evacuation step S120 of evacuating the loading chamber 130; a main chamber introducing step S130 of introducing the condenser 200 into the vacuum-sealed main chamber; a preheating step S140 of preheating the condenser 200 at the preheating position A1; a moving step S150 of moving the condenser 200 to a condensing position A2 where the connecting pipe 11 and the cooling plate 175 are located; a cooling portion approaching step S160 of moving the cooling plate 175 of the cooling portion 170 forward to the condenser 200 moved to the condensing position A2 so that the condenser 200 comes into contact with the cooling plate 175; and a condensing step S160 of condensing the gas supplied through the connecting pipe 11 into the condenser 200 while the cooling plate 175 is in contact with the condenser 200. The process includes a step S170; a cooling unit removal step S180 in which the cooling plate 175 of the cooling unit 170 retracts to separate the condenser unit 200 from the cooling plate 175; a moving step S190 in which the condenser unit 200 moves from the condensation position A2 after the cooling unit 170 is removed; a cooling step S200 in which the condenser unit 200 is cooled; a moving step S210 in which the condenser unit 200 is moved to the removal preparation chamber 150, which is in a vacuum state; a discharging step S220 in which air is introduced into the removal preparation chamber 150 and then the condenser unit 200 is discharged from the removal preparation chamber 150 to the outside; and a removing step S230 in which condensate from the discharged condenser unit 200 is removed. The condenser unit 200 from which the condensate has been removed in the removing step S230 is again introduced into the loading chamber 130, and the introducing step S110 is performed, thereby repeating the series of steps.

[0065] In the present invention, the condenser 200 is introduced into the loading chamber 130 (S110) before being introduced into the main chamber 110, and the loading chamber 130 is evacuated (S120). The first gate valve 140 is then opened to introduce the condenser 200 into the main chamber 110 (S130). When the condenser 200 is discharged, the second gate valve 160 is opened to move the condenser 200 into the evacuated stripping preparation chamber 150, and the second gate valve 160 is then closed to withdraw the condenser 200 from the stripping preparation chamber 150. This allows the condenser 200 to maintain a vacuum while the process continues. Furthermore, when the condenser 200 moves to or from the condensing position A2, the cooling unit 170 is removed. However, before condensation at the condensing position A2 begins, the cooling unit 170 approaches the condenser 200 to remove heat from the condenser 200, allowing condensation to continue without affecting the transfer process.

[0066] As described above, the present invention has been described mainly with reference to the embodiment, but it goes without saying that the present invention is not limited to this and can be implemented in various modified forms. [Explanation of symbols]

[0067] 10: Reactor 11: Connecting pipe 15: Heater 17: Insulation layer 20: Supply section 100: Continuous manufacturing equipment 110: Main chamber section 111: Housing 112:Connection part 113: Flow guide plate 115: Gas scattering prevention plate 120: Moving section 130: Loading chamber 140: First gate valve 150: Detachment preparation chamber 160: Second gate valve 170: Cooling section 175: Cooling plate 180:Removal part 200: Condenser 210: Main body 213: Back 220: Frame 225: Gas sign

Claims

1. 1. A silicon oxide continuous manufacturing apparatus including a main chamber connected to a reactor for producing silicon oxide gas, a connecting pipe connected to the reactor; a condensation section including a cylindrical main body having an open surface that is open to the connecting pipe side; a moving unit that moves the condensation unit within the main chamber; a cooling unit configured to be movable toward and away from the main body within the main chamber so as to cool the main body; A silicon oxide continuous production apparatus comprising:

2. The main chamber is connected to a vacuum generating unit, The apparatus for continuously producing silicon oxide according to claim 1 , wherein the condenser further includes a frame connected to the main body.

3. The main body has a cylindrical shape with a central axis extending horizontally, 2. The apparatus for continuously producing silicon oxide according to claim 1, wherein the cross-sectional area of ​​the main body is larger than the cross-sectional area of ​​the connecting pipe.

4. 4. The apparatus for continuously producing silicon oxide according to claim 3, wherein the cooling unit includes a cooling plate through which a cooling fluid passes, and a moving means for moving the cooling plate in the horizontal direction parallel to the central axis of the main body.

5. 5. The apparatus for continuously producing silicon oxide according to claim 4, wherein the moving means is configured to move the cooling plate so that the cooling plate comes into contact with a back surface opposite to the open surface when the silicon oxide gas flows into the main body of the condenser section.

6. the cooling plate includes a first uneven portion; 6. The silicon oxide continuous production apparatus according to claim 5, wherein the rear surface of the main body includes a second concave-convex portion that is molded into the first concave-convex portion when the cooling plate contacts the rear surface.

7. 5. The apparatus for continuously producing silicon oxide according to claim 4, wherein the cooling section includes a plurality of guide rods that extend in the horizontal direction and guide the cooling plate.

8. 7. The silicon oxide continuous production apparatus according to claim 6, further comprising a gas scattering prevention plate extending inside said main chamber section and surrounding said cooling plate.

9. 3. The silicon oxide continuous production apparatus according to claim 2, wherein the moving section includes a plurality of rolls arranged below the frame, and a driving means for rotating the rolls.

10. 3. The apparatus for continuously producing silicon oxide according to claim 2, further comprising a flow guide plate extending into the main chamber portion around the connecting pipe.

11. 3. The silicon oxide continuous production apparatus according to claim 2, wherein the frame has a rectangular parallelepiped shape surrounding the main body, and a gas guide plate having through holes formed therein is disposed on a surface of the frame facing the open surface.

12. 12. The apparatus for continuously producing silicon oxide according to claim 11, wherein the through-holes have different diameters at the front surface of the gas guide plate and the rear surface of the gas guide plate.

13. the main chamber includes first and second gate valves disposed on both sides of the main chamber in a direction in which the condenser is moved by the moving unit; 3. The apparatus for continuously producing silicon oxide according to claim 2, wherein a loading chamber is connected to an outer side of the first gate valve.

14. The apparatus for continuously producing silicon oxide according to claim 13 , wherein a stripping preparation chamber is connected to the outside of the second gate valve.

15. The apparatus for continuously producing silicon oxide according to claim 14 , wherein the loading chamber and the stripping preparation chamber are connected to a vacuum generating unit.

16. 2. The silicon oxide continuous production apparatus according to claim 1, further comprising: a scraper disposed above a connecting portion to which the connecting pipe is connected in the main chamber and configured to be movable in the vertical direction; and a collection portion disposed below the scraper.

17. a first movement stage of the cylindrical body, in which the cylindrical body is moved to a condensation position within the main chamber portion under vacuum; a cooling unit approaching step of bringing at least a portion of a cooling unit closer to one side surface of the main body that has moved from the outside of the main body to the condensation position; a condensation step of condensing the silicon oxide gas from the reactor inside the body; a cooling unit detaching step of detaching the cooling unit from the main body; a second moving step of the body moving the body from the condensing position to a cooling position; A method for continuously producing silicon oxide, comprising:

18. a loading chamber introduction step of introducing the body into a loading chamber under atmospheric pressure, the loading chamber introduction step being performed before the first moving step of the body; a vacuum generating step of evacuating the loading chamber into which the main body is inserted through a vacuum generating unit; a main chamber introduction step of opening a first gate valve between the evacuated loading chamber and the main chamber and introducing the main body into the main chamber; 18. The method for continuously producing silicon oxide according to claim 17, further comprising:

19. a removal preparation chamber introduction step, which is performed after the second moving step of the main body, of opening a second gate valve between the main chamber and the removal preparation chamber and introducing the main body into the evacuated removal preparation chamber; a discharge step of closing the second gate valve, adjusting the pressure in the removal preparation chamber to atmospheric pressure, and then discharging the main body to the outside; 20. The method for continuously producing silicon oxide according to claim 18, further comprising:

20. a removal step of removing condensation condensed on the body, the removal step being performed after the discharge step; 20. The method of claim 19, wherein the body from which the condensate has been removed is again subjected to the step of loading into a loading chamber.

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