Cup and substrate processing apparatus

Abstract

To reduce the difference in airflow velocity between the center of a substrate and the periphery of the substrate by suppressing the flow velocity of the airflow around the substrate periphery when exhausting a cup.SOLUTION: A cup used in a substrate processing device that supplies a processing liquid to a substrate to process the substrate, has an opening opened upward for transferring the substrate, a suction port that sucks gas flowing from above the cup toward the cup, and an exhaust port that discharges the gas sucked from the suction port. The suction port opens upward on the outer peripheral side of the opening, and a flow path from the opening to the exhaust port and a flow path from the suction port to the exhaust port are connected below the opening.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present disclosure relates to a cup and a substrate processing apparatus. [Background technology]

[0002] Patent Document 1 discloses a liquid processing apparatus that supplies a coating liquid from a coating liquid supply unit through a coating liquid nozzle to the surface of a substrate held substantially horizontally by a substrate holding unit surrounded by a cup body, thereby processing the surface of the substrate. This liquid processing apparatus includes a nozzle bath on which the coating liquid nozzle is placed and waits, a nozzle transport mechanism that transports the coating liquid nozzle between above the substrate held by the substrate holding unit and the nozzle bath, an imaging means that images the tip of the coating liquid nozzle being transported by the nozzle transport mechanism, a determination means that determines whether dripping or dripping of the coating liquid has occurred from the tip based on the image captured by the imaging means, and a control means that determines whether dripping or dripping of the coating liquid has occurred, when the determination means determines that dripping or dripping of the coating liquid has occurred, the coating liquid supply unit and / or the coating liquid nozzle are stopped. Alternatively, the nozzle transport mechanism may be provided with a control means for causing the nozzle transport mechanism to perform a corresponding operation. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2008-135679 Summary of the Invention [Problem to be solved by the invention]

[0004] The technology according to the present disclosure reduces the difference in airflow speed between the center and periphery of the substrate by suppressing the airflow speed at the periphery of the substrate when the inside of the cup is evacuated. [Means for solving the problem]

[0005] One aspect of the present disclosure is a cup used in a substrate processing apparatus that processes a substrate by supplying a processing liquid to the substrate, the cup having an opening that opens upward to allow the substrate to be transferred, a suction port that sucks in gas flowing from above the cup toward the cup, and an exhaust port that exhausts the gas sucked through the suction port, the suction port opening upward on an outer periphery side of the opening, and a flow path from the opening to the exhaust port and a flow path from the suction port to the exhaust port being connected below the opening, The air conditioner further includes a suction flow path that guides an airflow to the suction port, and an upper end of the suction flow path opens upward. . [Effects of the Invention]

[0006] According to the present disclosure, by suppressing the flow rate of the airflow at the peripheral edge of the substrate when exhausting the inside of the cup, it is possible to reduce the difference in flow rate of the airflow at the center and peripheral edge of the substrate. [Brief explanation of the drawings]

[0007] [Figure 1] 1 is a longitudinal sectional view showing an outline of the configuration of a substrate processing apparatus according to an embodiment of the present invention. [Figure 2] 1 is a cross-sectional view showing an outline of the configuration of a substrate processing apparatus according to an embodiment of the present invention. [Figure 3] FIG. 2 is a partially enlarged view of the cup shown in FIG. [Figure 4] FIG. 2 is an explanatory diagram schematically showing an airflow during exhaust. [Figure 5] FIG. 2 is a perspective view illustrating an example of the configuration of a cup. [Figure 6] FIG. 6 is a vertical cross-sectional view of the cup for explaining the configuration of the cup shown in FIG. 5. [Figure 7] FIG. 2 is an explanatory diagram schematically showing an airflow during exhaust. [Figure 8] FIG. 2 is an explanatory diagram illustrating an example of the configuration of a cup. [Figure 9] 10 is an explanatory diagram for explaining an example of the configuration of a cup. [Figure 10] 10 is an explanatory diagram for explaining an example of the configuration of a cup. [Figure 11] 10 is an explanatory diagram for explaining an example of the configuration of a cup. DETAILED DESCRIPTION OF THE INVENTION

[0008] BACKGROUND ART In a photolithography process in a manufacturing process for semiconductor devices and the like, a coating process is performed in which a predetermined coating liquid is applied onto a semiconductor wafer (hereinafter referred to as a "wafer") as a substrate to form a coating film such as an anti-reflective film or a resist film.

[0009] The so-called spin coating method is widely used in the coating process described above. A coating solution is supplied from a nozzle to the center of a rotating wafer, and centrifugal force spreads the coating solution on the wafer to form a coating film on the wafer. Rotary coating equipment for spin coating is equipped with a container called a cup to prevent the coating solution from scattering from the surface of the rotating wafer. Furthermore, when the wafer is rotated, resist solution may scatter in the form of a mist from the periphery of the wafer. To prevent this mist from rising above the cup and contaminating the outside of the cup, the coating equipment exhausts air from the bottom of the cup.

[0010] In the processing vessel of the coating processing apparatus, the exhaust from the cup bottom described above generates an airflow (downflow) from above the cup toward the exhaust port provided at the cup bottom. This airflow causes the atmosphere near the wafer surface to flow from the center toward the periphery of the wafer, and this atmosphere is sucked into the exhaust flow path from the wafer periphery. Furthermore, because the wafer is rotating during the coating process, the gas drawn into the wafer center is expelled from the wafer periphery by the rotation of the wafer. For these reasons, when the cup is exhausted, the airflow is stronger at the wafer periphery than at the wafer center.

[0011] In the conventional cup structure, as described above, the airflow at the wafer periphery is stronger than at the wafer center, which causes the airflow velocity at the wafer periphery to be faster than at the wafer center, and the thickness of the coating film at the wafer periphery tends to be thicker than at the wafer center. In other words, in the conventional cup structure, there is room for improvement in terms of in-plane film thickness uniformity due to the difference in airflow velocity between the wafer center and the wafer periphery.

[0012] Therefore, the technology according to the present disclosure reduces the difference in air flow speed between the center and periphery of the substrate by suppressing the air flow speed at the periphery of the substrate when exhausting the inside of the cup.

[0013] Hereinafter, a substrate processing apparatus and a cup included in the substrate processing apparatus according to this embodiment will be described with reference to the drawings. In this specification and the drawings, elements having substantially the same functional configurations are designated by the same reference numerals, and redundant description will be omitted.

[0014] Fig. 1 is a longitudinal sectional view showing an outline of the configuration of a substrate processing apparatus according to this embodiment, and Fig. 2 is a transverse sectional view showing an outline of the configuration of a substrate processing apparatus according to this embodiment.

[0015] The substrate processing apparatus according to this embodiment is a resist coating apparatus 1 that performs liquid processing by applying a resist liquid as a processing liquid to a wafer W as a substrate. As shown in Figures 1 and 2, the resist coating apparatus 1 has a processing vessel 10 whose interior can be sealed. A loading / unloading port (not shown) for the wafer W is formed on a side surface of the processing vessel 10.

[0016] A spin chuck 20 serving as a substrate holder for holding and rotating the wafer W is provided within the processing vessel 10. The spin chuck 20 can be rotated at a predetermined speed by a chuck driver 21 such as a motor. The chuck driver 21 is provided with an elevation drive mechanism such as a cylinder, allowing the spin chuck 20 to be raised and lowered freely.

[0017] A cup 30 that houses the spin chuck 20 and is evacuated from the bottom is provided within the processing vessel 10. The cup 30 is a container that receives and collects liquid that splashes or drops from the wafer W. The cup 30 includes an outer cup 31 disposed outside the spin chuck 20, an inner cup 32 located on the inner periphery of the outer cup 31, and an intermediate cup 33 located above the inner cup 32.

[0018] The outer cup 31 is a component that constitutes the outer wall of the cup 30, and is formed so as to surround the sides of the wafer W held by the spin chuck 20. Although the outer cup 31 is shown as a single unit in FIG. 1, the outer cup 31 may be composed of multiple components, for example, divided into upper and lower parts.

[0019] A cylindrical wall 34 is provided below the inner cup 32. A gap forming a discharge path is formed between this wall 34 and the outer cup 31. In addition, a curved path is formed below the inner cup 32 by an annular horizontal member 35, a cylindrical outer peripheral vertical member 36, a cylindrical inner peripheral vertical member 37, and an annular bottom member 38 located at the bottom. This curved path constitutes a gas-liquid separation section.

[0020] A drain port 39 for discharging the collected liquid is formed in the bottom member 38 between the outer cup 31 and the outer peripheral vertical member 36, and a drain pipe 40 is connected to this drain port 39. Meanwhile, an exhaust port 41 for discharging the atmosphere around the wafer W is formed in the bottom member 38 between the outer peripheral vertical member 36 and the inner peripheral vertical member 37, and an exhaust pipe 42 is connected to this exhaust port 41.

[0021] An opening 43 that opens upward is formed above the inner cup 32 in order to transfer the wafer W to and from the spin chuck 20 .

[0022] The intermediate cup 33 is formed in an annular shape, and the opening 43 described above is formed by the inner peripheral surface of the upper end 33a of the intermediate cup 33. The lower end 33b of the intermediate cup 33 is located closer to the outer cup 31 than the upper end 33a, and is inclined from the upper end 33a to the lower end 33b toward the outer cup 31.

[0023] 2, the lower end 33b of the intermediate cup 33 is supported by a plurality of support portions 44 provided on the inner circumferential surface of the outer cup 31. These support portions 44 are arranged at intervals along the inner circumferential surface of the outer cup 31. The structure for supporting the intermediate cup 33 is not particularly limited, and the intermediate cup 33 may be fixed to the inner cup 32, for example.

[0024] A rail 100 extending in the Y direction (left and right direction in FIG. 2) is formed on the negative X direction side (downward direction in FIG. 2) of the outer cup 31. The rail 100 is formed, for example, from the outside of the negative Y direction side (left direction in FIG. 2) of the outer cup 31 to the outside of the positive Y direction side (right direction in FIG. 2). An arm 101 is provided on the rail 100.

[0025] A nozzle 102 serving as a processing liquid supply unit that supplies a resist liquid as a processing liquid is supported on the arm 101. The arm 101 is movable on a rail 100 by a nozzle drive unit 103 serving as a movement mechanism. This allows the nozzle 102 to move from a waiting unit 104 installed outside the outer cup 31 on the positive Y-direction side to above the center of the wafer W in the outer cup 31. The nozzle drive unit 103 also allows the arm 101 to move up and down freely, allowing the height of the nozzle 102 to be adjusted.

[0026] As shown in FIG. 1, the resist coating apparatus 1 is controlled by a control unit 200. The control unit 200 is a computer equipped with a processor such as a CPU, a memory, and the like, and has a program storage unit (not shown). The program storage unit stores programs for controlling various processes performed by the resist coating apparatus 1. The programs may be recorded on a computer-readable storage medium H and installed from the storage medium H to the control unit 200. The storage medium H may be temporary or non-temporary. Some or all of the programs may be realized by dedicated hardware (circuit board).

[0027] (Cup exhaust structure) Next, the exhaust structure of the cup 30 will be described in detail. Fig. 3 is a partially enlarged view of the cup 30 shown in Fig. 1. Fig. 4 is an explanatory diagram showing a schematic view of the airflow during exhaust. Note that the thick black arrows in Fig. 4 indicate the airflow, and the thickness of the arrows indicates the magnitude of the gas flow rate.

[0028] Cup 30 has a suction port 45 that opens upward between the outer peripheral surface of the upper end 33a of intermediate cup 33 and the inner peripheral surface of the upper end of outer cup 31. Therefore, the upward openings formed in cup 30 include an opening 43 for transferring wafer W and suction port 45 provided on the outer peripheral side (external cup 31 side) of opening 43. This suction port 45 is an opening that sucks in gas flowing from above cup 30 toward cup 30.

[0029] In cup 30 having suction port 45 described above, a flow path 46 leading from opening 43 to exhaust port 41 and a flow path 47 leading from suction port 45 to exhaust port 41 are formed as exhaust flow paths. These flow paths 46 and 47 are connected to each other below opening 43, i.e., below wafer W held by spin chuck 20. Therefore, an airflow flowing from a gap between intermediate cup 33 and wafer W held by spin chuck 20 toward exhaust port 41 passes through flow path 46 and merges with an airflow passing through flow path 47.

[0030] The size of the suction port 45 is determined appropriately depending on the rotation speed and exhaust amount of the spin chuck 20, but the width d1 of the suction port 45 is preferably wider than the gap d2 between the peripheral edge of the wafer W held on the spin chuck 20 and the intermediate cup 33. In other words, the area of ​​the suction port 45 (the area of ​​the annular region having the width d2 shown in FIG. 2) is preferably larger than the area of ​​the opening 43 excluding the area of ​​the wafer W (the area of ​​the annular region having the width d1 shown in FIG. 2). This increases the flow rate of gas sucked through the suction port 45 compared to the flow rate of gas sucked through the gap between the wafer W and the intermediate cup 33, thereby facilitating exhaust from the suction port 45.

[0031] According to the cup 30 of the present embodiment described above, the suction port 45 is formed on the outer periphery of the opening 43 for transferring the wafer W, and therefore the gas flowing from above the cup 30 toward the cup 30 can be exhausted through the suction port 45. In other words, because an exhaust flow path other than the opening 43 is provided, the exhaust flow rate from the peripheral portion of the wafer W can be reduced. This reduces the difference in flow velocity between the center and peripheral portion of the wafer W, and improves the in-plane uniformity of the film thickness of the resist film formed on the surface of the wafer W.

[0032] (Suction channel) Next, other configuration examples of the cup 30 will be described with reference to Figures 5 to 7. Figure 5 is a perspective view for explaining the configuration example of the cup 30, and this figure shows the cup 30 in a state where a part of the cup 30 is cut away. Figure 6 is a vertical cross-sectional view of the cup 30 for explaining the configuration of the cup 30 shown in Figure 5. Figure 7 is an explanatory diagram that schematically shows the airflow during exhaust. Note that the thick black arrow in Figure 7 indicates the airflow, and the thickness of the arrow indicates the magnitude of the gas flow rate.

[0033] The cup 30 shown in Figures 5 to 7 has an outer upper cup 48 as a first upper cup extending upward from the upper end of the outer cup 31, and an inner upper cup 49 as a second upper cup provided above the intermediate cup 33.

[0034] The outer upper cup 48 is formed in a cylindrical shape. The lower end of the outer upper cup 48 is fixed to the upper end of the outer cup 31, and the upper end of the outer upper cup 48 is located higher than the suction port 45. Furthermore, the upper end of the outer upper cup 48 is located more inward than the lower end, and is inclined inward from the lower end to the upper end. Note that the outer upper cup 48 and the outer cup 31 may be configured as a single part.

[0035] The inner upper cup 49 is formed in an annular shape. The upper end of the inner upper cup 49 is located higher than the suction port 45. The upper end of the inner upper cup 49 is located more inward than the lower end, and is inclined inward from the lower end to the upper end.

[0036] 5, the inner upper cup 49 is supported by a plurality of support portions 50 provided on the inner circumferential surface of the outer upper cup 48. These support portions 50 are arranged at intervals along the inner circumferential surface of the outer upper cup 48. The structure for supporting the inner upper cup 49 is not particularly limited, and the inner upper cup 49 may be fixed to the intermediate cup 33, for example.

[0037] The cup 30 is provided with the outer upper cup 48 and the inner upper cup 49, thereby forming a suction flow path 51. The suction flow path 51 opens upward and guides the airflow from above the cup 30 toward the cup 30 to the suction port 45.

[0038] 6 and 7, the suction flow path 51 has an outer suction flow path 51a which is a flow path between the outer upper cup 48 and the inner upper cup 49, and an inner suction flow path 51b which is a flow path between the intermediate cup 33 and the inner upper cup 49. In the cup 30 having such a suction flow path 51, an airflow is formed during exhaust that passes through each of the outer suction flow path 51a and the inner suction flow path 51b.

[0039] The suction flow path 51 described above straightens the airflow from above the cup 30 toward the suction port 45, thereby suppressing the generation of vortexes near the suction port 45. This prevents gas from accumulating near the suction port 45, and promotes exhaust from the suction port 45.

[0040] Furthermore, by suppressing the generation of vortex flow, it is also possible to suppress backflow from the downstream end of flow path 46 formed by inner cup 32 and intermediate cup 33 to flow path 47 formed by outer cup 31 and intermediate cup 33. Therefore, it is possible to suppress the resist liquid that has scattered as a mist passing through flow path 46 from flowing back into flow path 47, and to suppress the scattering of the resist liquid mist outside cup 30.

[0041] From the viewpoint of enhancing the effect of suppressing backflow from flow path 46 to flow path 47 described above, it is preferable that the cross-sectional area of ​​suction flow path 51 decreases from the upstream side to the downstream side of suction flow path 51. This increases the suction pressure at the downstream end of suction flow path 51, thereby enhancing the effect of suppressing backflow from flow path 46 to flow path 47.

[0042] Furthermore, when the outer suction flow path 51a and the inner suction flow path 51b are provided, it is preferable that the cross-sectional area of ​​at least one of the outer suction flow path 51a and the inner suction flow path 51b decreases from the upstream side to the downstream side. For example, as shown in Figures 5 to 7, when the cross-sectional area of ​​each suction flow path 51a, 51b gradually decreases, the suction pressure increases at the downstream end of each suction flow path 51a, 51b. This makes it possible to suppress not only backflow from the downstream end of flow path 46 to flow path 47, but also backflow between both the outer suction flow path 51a and the inner suction flow path 51b.

[0043] Furthermore, by providing the outer upper cup 48 and the inner upper cup 49, the effect of receiving and recovering the resist liquid scattered from the wafer W held on the spin chuck 20 can be improved.

[0044] 6, the narrowest point of the outer suction flow path 51a is the position of the lower end of the inner upper cup 49, and the flow path cross-sectional area at this position (the area in the circumferential direction of the width d3 between the outer upper cup 48 and the inner upper cup 49) is the smallest cross-sectional area of ​​the outer suction flow path 51a. The narrowest point of the inner suction flow path 51b is also the position of the lower end of the inner upper cup 49, and the flow path cross-sectional area at this position (the area in the circumferential direction of the width d4 between the intermediate cup 33 and the inner upper cup 49) is the smallest cross-sectional area of ​​the inner suction flow path 51b.

[0045] When the minimum cross-sectional area of ​​the outer suction flow path 51a is larger than the minimum cross-sectional area of ​​the inner suction flow path 51b, the flow rate of gas passing through the outer suction flow path 51a is greater than the flow rate of gas passing through the inner suction flow path 51b, and exhaust is promoted at a position farther away from the peripheral edge of the wafer W. In other words, the flow rate of gas flowing near the peripheral edge of the wafer W is reduced, and the difference in flow velocity of the airflow between the center of the wafer W and the peripheral edge of the wafer W can be made smaller.

[0046] The configuration of the cup 30 having the suction channel 51 described above is one example, and the cup 30 having the suction channel 51 may be configured as shown in FIG. 7 or FIG. 8, for example.

[0047] 8, the suction flow path 51 is configured by the outer upper cup 48 and the intermediate cup 33, and does not include the inner upper cup 49. Even in the cup 30 configured in this manner, the rectifying effect of the suction flow path 51 and the effect of suppressing scattering of the resist liquid can be obtained.

[0048] 9, the suction flow path 51 is made up of the outer cup 31, the inner upper cup 49, and the intermediate cup 33. The suction flow path 51 is formed with an outer suction flow path 51a made up of the outer cup 31 and the inner upper cup 49, and an inner suction flow path 51b made up of the intermediate cup 33 and the inner upper cup 49. Even in the cup 30 configured in this manner, the rectifying effect of the suction flow path 51 and the effect of suppressing scattering of the resist liquid can be obtained.

[0049] In particular, in the cup 30 shown in Figure 9, the inner upper cup 49 is located closer to the wafer W than the outer upper cup 48 shown in Figure 8, so that the effect of suppressing the scattering of resist liquid is greater than that of the cup 30 shown in Figure 8.

[0050] (Example of suction port placement) In the cup 30 described above, the suction port 45 is an opening facing upward, but the suction port 45 may be an opening facing horizontally, for example, as shown in FIG.

[0051] 10, a suction port 45 that opens in the horizontal direction is formed in the exterior cup 31 that constitutes the outer wall of the cup 30. This suction port 45 is an arc-shaped opening that extends along the circumferential direction of the exterior cup 31, and when the exterior cup 31 is viewed horizontally, the opening area extends in the horizontal direction. A plurality of such suction ports 45 are provided at intervals around the circumferential direction of the exterior cup 31, thereby forming openings that face in the horizontal direction around substantially the entire circumference of the exterior cup 31.

[0052] Furthermore, the area of ​​the suction port 45 (total area of ​​the multiple arc-shaped suction ports 45) is preferably larger than the area of ​​the opening 43 (the area of ​​the annular gap formed between the wafer W and the intermediate cup 33 in a plan view) excluding the area of ​​the wafer W held on the spin chuck 20. This increases the flow rate of gas sucked through the suction port 45 compared to the flow rate of gas sucked through the gap between the wafer W and the intermediate cup 33, thereby facilitating exhaust from the suction port 45.

[0053] A lid body 52 having an annular shape in a plan view is provided between the upper end of the outer cup 31 and the upper end of the intermediate cup 33. The lid body 52 covers the upper end surface between the outer cup 31 and the intermediate cup 33 over the entire circumferential direction of the cup 30. The intermediate cup 33 and the lid body 52 may be configured as a single part.

[0054] Cup 30 having the above configuration has, as exhaust flow paths, flow path 46 extending from opening 43 to exhaust port 41 and flow path 47 extending from suction port 45, which opens horizontally, to exhaust port 41. Furthermore, flow paths 46 and 47 are connected below opening 43, i.e., below wafer W held by spin chuck 20.

[0055] A first inclined member 53 is provided on the outer peripheral surface of the exterior cup 31 in order to form a suction flow path 51 that guides the airflow heading toward the cup 30 from above the cup 30 to the suction port 45. The lower end of this first inclined member 53 is fixed to the outer peripheral surface of the exterior cup 31 at a position below the suction port 45. The upper end of the first inclined member 53 is inclined upward toward the outside of the exterior cup 31.

[0056] The suction flow path 51 is composed of the outer cup 31 and the first inclined member 53, and the upper end of the suction flow path 51 opens upward. When such a suction flow path 51 is provided, the rectifying effect of the suction flow path 51 as described above can be obtained.

[0057] 11, the suction flow path 51 may be configured by a second inclined member 54 and a first inclined member 53 provided above the suction port 45. In the example shown in FIG. 11, the lower end of the second inclined member 54 is fixed on the exterior cup 31, and the upper end of the second inclined member 54 is inclined upward from the lower end toward the outside of the exterior cup 31.

[0058] Furthermore, it is preferable that the cross-sectional area of ​​the suction flow path 51 decreases from the upstream side to the downstream side, thereby increasing the suction pressure in the vicinity of the suction port 45 and suppressing backflow from the downstream end of the flow path 46 to the flow path 47.

[0059] In the cup 30 described above, the suction port 45 opening horizontally is formed in the outer cup 31, so that a portion of the gas flowing from above the cup 30 toward the cup 30 can be sucked in and exhausted from the outer peripheral surface of the outer cup 31. This reduces the flow rate of the gas that finds its way into the gap between the wafer W and the intermediate cup 33, making it possible to suppress the flow velocity of the airflow at the peripheral edge of the wafer W. As a result, the difference in flow velocity of the airflow at the center and peripheral edge of the wafer W is reduced, and the in-plane uniformity of the film thickness of the resist film formed on the surface of the wafer W can be improved.

[0060] In addition, the cup 30 shown in Figures 10 and 11 is configured to have a suction flow path 51, but if the resist coating device 1 has the exhaust capacity to properly perform suction from the suction port 45 even without providing the suction flow path 51, the suction flow path 51 does not have to be provided.

[0061] The cup according to the present disclosure has been described above. Note that the shapes of the components of cup 30 described in this specification are merely examples, and the specific shape is determined appropriately depending on the type of gas discharged from the cup, the exhaust capacity of the substrate processing apparatus, the processing liquid supplied to the substrate surface, and the like. For example, each cup component constituting suction flow path 51 may have a curved surface to enhance the flow straightening effect. Furthermore, each cup component constituting suction flow path 51 may have a curved surface as long as the flow straightening effect is obtained.

[0062] Furthermore, the cup and substrate processing apparatus according to the present disclosure can also be applied to processing substrates other than semiconductor wafers, such as FPD (flat panel display) substrates.

[0063] The embodiments disclosed herein should be considered to be illustrative in all respects and not restrictive, and the above-described embodiments may be omitted, substituted, or modified in various ways without departing from the scope and spirit of the appended claims. [Explanation of symbols]

[0064] 1. Resist coating device 20 Spin Chuck 30 cups 41 Exhaust port 43 Opening 45 Suction port 46 Flow path 47 Flow path 102 nozzle W wafer

Claims

1. A cup used in a substrate processing apparatus for supplying a processing liquid to a substrate to process the substrate, an opening portion that opens upward for transferring the substrate; a suction port that sucks gas flowing from above the cup toward the cup; an exhaust port for discharging the gas sucked through the suction port, The suction port opens upward on the outer circumferential side of the opening, a flow path from the opening to the exhaust port and a flow path from the suction port to the exhaust port are connected below the opening, The air conditioner further includes a suction flow path that guides an airflow to the suction port, The upper end of the suction channel is open upward.

2. The cup according to claim 1 , wherein the cross-sectional area of ​​the suction passage decreases from the upstream side to the downstream side of the suction passage.

3. an outer cup that forms an outer wall of the cup; an inner cup provided on the inner circumferential side of the outer cup; an intermediate cup provided above the inner cup, the opening is formed on an inner circumferential surface of an upper end portion of the intermediate cup, The cup according to claim 1 or 2, wherein the suction port is formed on an outer peripheral surface of an upper end of the intermediate cup and an inner peripheral surface of an upper end of the outer cup.

4. an outer cup that forms an outer wall of the cup; an inner cup provided on the inner circumferential side of the outer cup; an intermediate cup provided above the inner cup; an outer upper cup extending upwardly from the outer cup; The cup according to claim 1 or 2, wherein the suction channel is formed by the middle cup and the outer upper cup.

5. an outer cup that forms an outer wall of the cup; an inner cup provided on the inner circumferential side of the outer cup; an intermediate cup provided above the inner cup; an inner upper cup disposed above the intermediate cup; The suction channel is an outer suction channel formed by the outer cup and the inner upper cup; The cup according to claim 1 or 2, further comprising an inner suction channel formed by the intermediate cup and the inner upper cup.

6. 6. The cup of claim 5, wherein the minimum cross-sectional area of ​​the outer suction channel is greater than the minimum cross-sectional area of ​​the inner suction channel.

7. an outer cup that forms an outer wall of the cup; an inner cup provided on the inner circumferential side of the outer cup; an intermediate cup provided above the inner cup; an outer upper cup extending upward from the outer cup; an inner upper cup disposed above the intermediate cup; The suction channel is an outer suction channel formed by the outer upper cup and the inner upper cup; The cup according to claim 1 or 2, further comprising an inner suction channel formed by the intermediate cup and the inner upper cup.

8. 8. The cup of claim 7, wherein the minimum cross-sectional area of ​​the outer suction channel is greater than the minimum cross-sectional area of ​​the inner suction channel.

9. A cup used in a substrate processing apparatus for supplying a processing liquid to a substrate to process the substrate, an opening portion that opens upward for transferring the substrate; a suction port that sucks gas flowing from above the cup toward the cup; an exhaust port for discharging the gas sucked through the suction port, the suction port opens horizontally on the outer wall of the cup, A cup, wherein a flow path from the opening to the exhaust port and a flow path from the suction port to the exhaust port are connected below the opening.

10. The air conditioner further includes a suction flow path that guides an airflow to the suction port, The cup according to claim 9 , wherein an upper end of the suction channel opens upward.

11. 11. The cup of claim 10, wherein the cross-sectional area of ​​the suction channel decreases from the upstream side to the downstream side of the suction channel.

12. A substrate processing apparatus that supplies a processing liquid to a substrate to process the substrate, a substrate holder that holds and rotates the substrate; a processing liquid supply unit that supplies a processing liquid to the substrate; a cup in which the substrate holder is housed, The cup is an opening portion that opens upward for transferring the substrate; a suction port that sucks gas flowing from above the cup toward the cup; an exhaust port for discharging the gas sucked through the suction port, The suction port opens upward on the outer circumferential side of the opening, a flow path from the opening to the exhaust port and a flow path from the suction port to the exhaust port are connected below the opening, The substrate processing apparatus further includes a suction flow path that guides an airflow to the suction port, the upper end of the suction flow path opening upward.

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