Modular mainframe layout supporting multiple semiconductor process modules or chambers

Abstract

Provided herein are methods and apparatus for bonding chiplets to a substrate. In some embodiments, a multi-chamber processing tool for processing a substrate includes a first equipment front-end module (EFEM) having one or more load ports for receiving one or more types of substrates, a second EFEM having one or more load ports, and a plurality of atmospheric modular mainframes (AMMs) coupled to each other, with a first AMM coupled to the first EFEM and a last AMM coupled to the second EFEM, each of the plurality of AMMs including a transfer chamber and one or more process chambers coupled to the transfer chamber, the transfer chamber including a buffer and including a transfer robot, the one or more process chambers, and a buffer disposed on adjacent AMMs of the plurality of AMMs.

Description

[Technical Field]

[0001] TECHNICAL FIELD

[0001] Embodiments of the present disclosure generally relate to substrate processing equipment. [Background technology]

[0002]

[0002] Substrates undergo various processes during the manufacture of semiconductor integrated circuit devices. Some of these processes include wafer dicing, in which a processed wafer is placed on a dicing tape and cut or separated into multiple dies or chiplets. Once the wafer is diced, the chiplets typically remain positioned on the dicing tape until they are extracted and bonded to a substrate. Conventional processing tools for cleaning, dicing, and bonding chiplets to a substrate typically include multiple tools or a single linear robot housed in a mainframe tool. Multiple chambers or process modules may be coupled to the mainframe, roughly determining the length of the mainframe and the single linear robot. However, tools with a single linear robot housed in a mainframe are limited in scalability and processing throughput.

[0003] Accordingly, the present inventors have provided an improved multi-chamber processing tool for processing substrates. Summary of the Invention

[0004]

[0004] Provided herein are methods and apparatus for bonding chiplets to substrates. In some embodiments, a multi-chamber processing tool for processing substrates includes a first Equipment Front End Module (EFEM) having one or more load ports for accepting one or more types of substrates, a second EFEM on an opposite side of the multi-chamber processing tool from the first EFEM, the second EFEM having one or more load ports for accepting the one or more types of substrates, and a plurality of atmospheric pressure modular mainframes (AMMs) coupled to each other and having a first AMM coupled to the first EFEM and a final AMM coupled to the second EFEM, each of the plurality of AMMs including a transfer chamber and one or more process chambers coupled to the transfer chamber, the transfer chamber including a buffer configured to hold a plurality of the one or more types of substrates, and the transfer chamber including the buffer and a transfer robot configured to transfer the one or more types of substrates between the one or more process chambers and the buffers located on adjacent AMMs of the plurality of AMMs.

[0005]

[0005] In some embodiments, a multi-chamber processing tool for processing substrates includes a first equipment front end module (EFEM) having one or more first load ports for accepting a first type of substrate, one or more second load ports for accepting a second type of substrate having a plurality of chiplets, and an EFEM robot configured to transfer the first type of substrate and the second type of substrate; a second EFEM having one or more second load ports for accepting the first type of substrate, one or more second load ports for accepting the second type of substrate having a plurality of chiplets, and an EFEM robot configured to transfer the first type of substrate and the second type of substrate; a plurality of AMMs coupled to each other and having a first AMM coupled to the first EFEM and a last AMM coupled to the second EFEM, each of the plurality of AMMs including a transfer chamber and a wet clean chamber coupled to the transfer chamber, a plasma chamber, a degassing chamber, a radiation chamber, and one or more process chambers including at least one of a plasma chamber or a degassing chamber or a bonder chamber, wherein the transfer chamber includes a buffer configured to hold one or more first type substrates and one or more second type substrates, the transfer chamber including the buffer and a transfer robot configured to transfer the first type substrates and the second type substrates between the one or more process chambers and the buffers disposed on adjacent AMMs of the plurality of AMMs; wherein the one or more process chambers of a first AMM of the plurality of AMMs include at least one of a plasma chamber or a degassing chamber and include a wet clean chamber, a second AMM of the plurality of AMMs coupled to the first AMM includes at least one of a plasma chamber or a degassing chamber, and a third AMM of the plurality of AMMs coupled to the second AMM includes one or more bonder chambers configured to remove a plurality of chiplets from the second type substrates and bond the plurality of chiplets onto the first type substrates.

[0006]

[0006] In some embodiments, a method for bonding multiple chiplets onto a substrate includes loading a first type of substrate onto a first load port of an Equipment Front End Module (EFEM) of a multi-chamber processing tool having multiple AMMs; using an EFEM robot to transfer the first type of substrate to a first buffer disposed on a first AMM coupled to the EFEM; sequentially transferring the first type of substrate from the first buffer to a first wet cleaning chamber that performs a cleaning process, a first degassing chamber that performs a degassing process to dry the first type of substrate, a first plasma chamber that performs a plasma etching process to remove unwanted material from the first type of substrate, and a bonder chamber; using the EFEM robot to transfer a second type of substrate having multiple chiplets to the first buffer; The method includes sequentially transferring the second type of substrate from the buffer to a second wet cleaning chamber that performs a cleaning process, a second degassing chamber that performs a degassing process to dry the second type of substrate, a second plasma chamber that performs a plasma etching process to remove unwanted material from the second type of substrate, a radiation chamber that performs a radiation process to weaken bonds between the plurality of chiplets and the second type of substrate, and a bonder chamber; transferring at least a portion of the plurality of chiplets from the second type of substrate to a first type of substrate in the bonder chamber; bonding at least a portion of the plurality of chiplets to the first type of substrate in the bonder chamber; and loading the first type of substrate with the bonded plurality of chiplets from the last AMM to a load port of a second EFEM of the multi-chamber processing tool.

[0007]

[0007] Other further embodiments of the present disclosure are described below.

[0008]

[0008] The embodiments of the present disclosure summarized above and described in more detail below can be understood by reference to the exemplary embodiments of the present disclosure illustrated in the accompanying drawings. However, the accompanying drawings merely illustrate typical embodiments of the present disclosure and therefore should not be considered limiting in scope, as the present disclosure may admit of other equally effective embodiments. [Brief explanation of the drawings]

[0009] [Figure 1] FIG. 1 is a schematic top view illustrating a multi-chamber processing tool for bonding chiplets to a substrate, according to at least some embodiments of the present disclosure. [Figure 2] FIG. 1 is a schematic top view illustrating a multi-chamber processing tool for bonding chiplets to a substrate, according to at least some embodiments of the present disclosure. [Figure 3] FIG. 1 is a schematic top view illustrating a multi-chamber processing tool for bonding chiplets to a substrate, according to at least some embodiments of the present disclosure. [Figure 4] FIG. 1 is a schematic top view illustrating a multi-chamber processing tool for bonding chiplets to a substrate arranged in a T-configuration, according to at least some embodiments of the present disclosure. [Figure 5] FIG. 1 is a schematic top view illustrating a multi-chamber processing tool for bonding chiplets to a substrate arranged in a U-shaped configuration, according to at least some embodiments of the present disclosure. [Figure 6] FIG. 2 illustrates a second type of substrate, according to at least some embodiments of the present disclosure. [Figure 7] FIG. 1 is an isometric view of a simplified atmospheric modular mainframe according to at least some embodiments of the present disclosure. [Figure 8] FIG. 1 is a flow diagram illustrating a method for bonding chiplets to a substrate, in accordance with at least some embodiments of the present disclosure. [Figure 9]FIG. 1 is a schematic top view illustrating a multi-chamber processing tool for bonding chiplets to a substrate, according to at least some embodiments of the present disclosure. [Figure 10] FIG. 1 is a schematic top view illustrating a multi-chamber processing tool for bonding chiplets to a substrate, according to at least some embodiments of the present disclosure. DETAILED DESCRIPTION OF THE INVENTION

[0010]

[0019] To facilitate understanding, the same reference numerals have been used, wherever possible, to designate identical elements common to the drawings. The drawings are not drawn to scale and may be simplified for clarity. Elements and features of one embodiment may be beneficially incorporated in other embodiments without further recitation.

[0011]

[0020] Provided herein are embodiments of methods and apparatus for processing substrates. The apparatus is generally modular and comprises a multi-chamber processing tool including one or more front-end equipment modules (EFEMs) for loading substrates into and out of the multi-chamber processing tool, coupled to multiple AMMs configured to perform one or more processing steps on the substrates. The one or more processing steps may be any suitable steps in the manufacturing or packaging of integrated circuits. For example, the one or more processing steps may be configured to perform one or more of a bonding process for bonding multiple chiplets onto a substrate, a plasma dicing or singulation process, a substrate cleaning process, a substrate plating or coating process, etc. The multiple AMMs generally interface with the EFEM to deliver substrates to one or more process chambers associated with each of the AMMs.

[0012]

[0021] Each of the multiple AMMs includes a transfer robot, and operating the transfer robots in parallel can facilitate simultaneous processing of multiple substrates, advantageously increasing processing throughput. In an exemplary process of bonding multiple chiplets onto a substrate, a multi-chamber processing tool advantageously enables bonding multiple chiplets having different sizes onto a substrate, and enables bonding multiple chiplets onto a substrate in multiple layers within the multi-chamber processing tool.

[0013]

[0022] 1 is a schematic top view illustrating a multi-chamber processing tool 100 for bonding chiplets to substrates, according to at least some embodiments of the present disclosure. The multi-chamber processing tool 100 generally includes an equipment front-end module (EFEM) 102 and multiple AMMs 110 coupled in series to the EFEM 102. The multiple AMMs 110 are configured to transport one or more types of substrates 112 back and forth from the EFEM 102 through the multi-chamber processing tool 100 and perform one or more processing steps on the one or more types of substrates 112. Each of the multiple AMMs 110 generally includes a transfer chamber 116 and one or more process chambers 106 coupled to the transfer chamber 116 for performing one or more processing steps. The multiple AMMs 110 are coupled to each other via their respective transfer chambers 116, advantageously providing modular expandability and customizability of the multi-chamber processing tool 100. As shown in FIG. 1, the plurality of AMMs 110 includes three AMMs, a first AMM 110a coupled to the EFEM 102, a second AMM 110b coupled to the first AMM 110a, and a third AMM 110c coupled to the second AMM 110b.

[0014]

[0023] The EFEM 102 includes a plurality of load ports 114 for receiving one or more types of substrates 112. In some embodiments, the one or more types of substrates 112 include 200 mm wafers, 300 mm wafers, 450 mm wafers, tape frame substrates, carrier substrates, silicon substrates, glass substrates, etc. In some embodiments, the plurality of load ports 114 includes at least one of one or more first load ports 114 a for receiving a first type of substrate 112 a or one or more second load ports 114 b for receiving a second type of substrate 112 b. In some embodiments, the first type of substrate 112 a has a different size than the second type of substrate 112 b. In some embodiments, the second type of substrate 112 b includes a tape frame substrate or a carrier substrate. In some embodiments, the second type of substrate 112 b includes a plurality of chiplets arranged on a tape frame or carrier plate. In some embodiments, the second type of substrate 112 b can hold chiplets of different types and sizes. As such, one or more second load ports 114b may have different sizes or receiving surfaces configured to load second type substrates 112b having different sizes.

[0015]

[0024] In some embodiments, multiple load ports 114 are positioned along a common side of the EFEM 102. Although Figure 1 illustrates a pair of first load ports 114a and a pair of second load ports 114b, the EFEM 102 may include other combinations of load ports, such as one first load port 114a and three second load ports 114b.

[0016]

[0025] In some embodiments, the EFEM 102 includes a scan station 108 having a substrate ID reader for scanning one or more types of substrates 112 to identify the substrates. In some embodiments, the substrate ID reader includes a barcode reader or an optical character recognition (OCR) reader. The multi-chamber processing tool 100 is configured to use any identification information from the scanned one or more types of substrates 112 and determine a process step based on the identification information, e.g., a different process step for the first type of substrates 112a and the second type of substrates 112b. In some embodiments, the scan station 108 can also be configured to rotate and move the first type of substrates 112a or the second type of substrates 112b to align them. In some embodiments, one or more of the multiple AMMs 110 include the scan station 108.

[0017]

[0026] The EFEM robot 104 is disposed in the EFEM 102 and configured to transport a first type of substrate 112 a and a second type of substrate 112 b between a plurality of load ports 114 to the scan station 108. The EFEM robot 104 may include a substrate end effector for handling the first type of substrate 112 a and a second end effector for handling the second type of substrate 112 b. The EFEM robot 104 may be capable of rotating or rotating and moving linearly.

[0018]

[0027] FIG. 6 illustrates a second type substrate 112b according to at least some embodiments of the present disclosure. In some embodiments, the second type substrate 112b is a tape frame substrate generally including a layer of backing tape 602 surrounded by a tape frame 604. In use, a plurality of chiplets 606 can be attached to the backing tape 602. The plurality of chiplets 606 is generally formed through a singulation process in which a semiconductor wafer 610 is diced into a plurality of chiplets 606, or dies. In some embodiments, the tape frame 604 is made of a metal such as stainless steel. The tape frame 604 may have one or more notches 608 to facilitate alignment and handling. For a semiconductor wafer 610 having a diameter of 300 mm, the tape frame 604 may have a width of about 340 mm to about 420 mm and a length of about 340 mm to about 420 mm. The second type substrate 112b may alternatively be a carrier plate configured to couple a plurality of chiplets 606 to the carrier plate.

[0019]

[0028] Referring again to FIG. 1 , the one or more process chambers 106 may be sealingly engaged with the transfer chamber 116. The transfer chamber 116 typically operates at atmospheric pressure, but may be configured to operate at vacuum pressure. For example, the transfer chamber 116 may be a non-vacuum chamber configured to operate at atmospheric pressure of about 700 Torr or greater. Furthermore, although the one or more process chambers 106 are generally illustrated as being orthogonal to the transfer chamber 116, the one or more process chambers 106 may be disposed at an angle relative to the transfer chamber 116, or a combination of orthogonal and oblique. For example, the second AMM 110b is illustrated as a pair of one or more process chambers 106 disposed at an angle relative to the transfer chamber 116.

[0020]

[0029] The transfer chamber 116 includes a buffer 120 configured to hold one or more first type substrates 112a. In some embodiments, the buffer 120 is configured to hold one or more of the first type substrates 112a and one or more second type substrates 112b. The transfer chamber 116 includes a transfer robot 126 configured to transfer the first type substrates 112a and the second type substrates 112b between the buffer 120, one or more process chambers 106, and buffers located in adjacent AMMs of the plurality of AMMs 110. For example, the transfer robot 126 of the first AMM 110a is configured to transfer the first type substrates 112a and the second type substrates 112b between the buffers 120 of the first AMM 110a and the second AMM 110b. In some embodiments, the buffer 120 is located within an interior region of the transfer chamber 116, advantageously reducing the overall tool footprint. Additionally, the buffer 120 may be open to the interior region of the transfer chamber 116 to facilitate access by the transfer robot 126. In some embodiments, the buffer 120 may also be configured to perform a radiation process on the second type of substrates 112b.

[0021]

[0030] FIG. 7 is an isometric view illustrating a transfer chamber 116 of a plurality of AMMs 110 according to at least some embodiments of the present disclosure. The transfer chamber 116 is illustrated in simplified form to illustrate major components. The transfer chamber 116 generally includes a frame 710 surrounding the transfer chamber 116, covered by a plate (top plate 712 shown in FIG. 7 , side plates not shown). In some embodiments, the transfer chamber 116 has a width that is shorter than its length. The top plate 712 (or side plates) may include an access opening 716 that is selectively opened and closed to service the transfer chamber 116. The side plates include openings at the interface with at least one of one or more process chambers 106, the EFEM 102, or an adjacent transfer chamber. While FIG. 7 illustrates a rectangular or box-shaped transfer chamber 116, the transfer chamber 116 may have any other suitable shape, such as a cylindrical or hexagonal shape. One or more process chambers 106 may be orthogonally coupled to the transfer chamber 116 or may be diagonally coupled to the transfer chamber 116 .

[0022]

[0031] The transfer chamber 116 may have one or more environmental controls. For example, the airflow openings (e.g., access openings 716) of the transfer chamber 116 may include filters to filter the airflow entering the transfer chamber 116. Other environmental controls may include one or more of humidity control, static control, temperature control, or pressure control.

[0023]

[0032] The transfer robot 126 is generally housed within a frame 710. The transfer robot 126 is configured for rotational movement or rotational and linear movement within the transfer chamber 116. In some embodiments, the transfer robot 126 moves linearly via rails on the floor of the transfer chamber 116 or via wheels underneath the transfer robot 126. The transfer robot 126 includes a telescoping arm 720 having one or more end effectors 730 that can extend into one or more process chambers 106 and into an adjacent AMM. In some embodiments, the one or more end effectors 730 include a substrate end effector for handling a first type of substrate 112a and a second end effector for handling a second type of substrate 112b. In some embodiments, for a transfer chamber 116 having a length of about 2.0 to about 2.5 meters, the telescoping arm 720 can have a stroke length of up to about 1.0 meter. In some embodiments, the EFEM robot 104 is the same type and configuration as the transfer robot 126 to increase commonality of parts.

[0024]

[0033] The buffer 120 is housed within the frame 710, for example, in an interior region of the frame 710. In some embodiments, the buffer 120 is configured to rotate and align the first type substrates 112a and the second type substrates 112b in a desired manner. In some embodiments, the buffer is configured to hold one or more types of substrates 112 in a vertical stack, advantageously reducing the footprint of the transfer chamber 116. For example, in some embodiments, the buffer 120 includes a plurality of shelves 722 for storing or holding one or more first type substrates 112a and one or more second type substrates 112b. In some embodiments, the plurality of shelves 722 are arranged in a vertically spaced configuration. In some embodiments, the buffer 120 includes six shelves. In some embodiments, the plurality of shelves includes two shelves for accommodating the second type substrates 112b.

[0025]

[0034] Referring again to FIG. 1 , the one or more process chambers 106 may include atmospheric chambers configured to operate under atmospheric pressure and vacuum chambers configured to operate under vacuum pressure. Examples of atmospheric chambers may generally include wet cleaning chambers, radiation chambers, heating chambers, metrology chambers, bonding chambers, etc. Examples of vacuum chambers may include plasma chambers. Atmospheric chambers of the types described above may also be configured to operate under vacuum, if desired. The one or more process chambers 106 may be any process chamber or module necessary to perform a bonding process, a dicing process, a cleaning process, a plating process, etc.

[0026]

[0035] In some embodiments, one or more process chambers 106 of each of the multiple AMMs 110 include at least one of a wet cleaning chamber 122, a plasma chamber 130, a degassing chamber 132, a radiation chamber 134, or a bonder chamber 140, such that the multi-chamber processing tool 100 includes at least one wet cleaning chamber 122, at least one plasma chamber 130, at least one degassing chamber 132, at least one radiation chamber 134, and at least one bonder chamber 140.

[0027]

[0036] The wet cleaning chambers 122 are configured to perform a wet cleaning process using a fluid, such as water, to clean one or more types of substrates 112. The wet cleaning chambers 122 may include a first wet cleaning chamber 122a for cleaning a first type of substrate 112a or a second wet cleaning chamber 122b for cleaning a second type of substrate 112b.

[0028]

[0037] The degassing chamber 132 is configured to perform a degassing process to remove moisture from the substrates 112, for example, via a high-temperature baking process. In some embodiments, the degassing chamber 132 includes a first degassing chamber 132a for the first type of substrates 112a and a second degassing chamber 132b for the second type of substrates 112b.

[0029]

[0038] The plasma chamber 130 may be configured to perform an etching process to remove unwanted materials, such as organic materials and oxides, from the first type substrate 112 a or the second type substrate 112 b. In some embodiments, the plasma chamber 130 includes a first plasma chamber 130 a for the first type substrate 112 a and a second plasma chamber 130 b for the second type substrate 112 b. The plasma chamber 130 may also be configured to perform an etching process to dice the substrate 112 into chiplets. In some embodiments, the plasma chamber 130 may be configured to perform a deposition process, such as a physical vapor deposition process, a chemical vapor deposition process, or the like, to coat the first type substrate 112 a or the second type substrate 112 b with a layer of a desired material.

[0030]

[0039] The radiation chamber 134 is configured to perform a radiation process on the second type substrate 112b to reduce adhesion between the plurality of chiplets 606 and the backing tape 602. For example, the radiation chamber 134 may be an ultraviolet chamber configured to apply ultraviolet light to the backing tape 602 or may be a heating chamber configured to heat the backing tape 602. Reducing the adhesion between the plurality of chiplets 606 and the backing tape 602 allows the plurality of chiplets 606 to be easily removed from the second type substrate 112b. In some embodiments, the radiation chamber 134 is configured to hold and process a plurality of second type substrates 112b.

[0031]

[0040] The bonder chamber 140 is configured to transfer and bond at least a portion of the plurality of chiplets 606 to one of the first type substrates 112a. The bonder chamber 140 generally includes a first support 142 that supports one of the first type substrates 112a and a second support 144 that supports one of the second type substrates 112b.

[0032]

[0041] In some embodiments, the one or more process chambers 106 of the first AMM 110a include at least one of a plasma chamber 130 or a degassing chamber 132, and include a wet cleaning chamber 122. In the illustrative example of FIG. 1 , the first AMM 110a includes a first plasma chamber 130a and a second plasma chamber 130b on a first side of the first AMM 110a. In some embodiments, the first AMM 110a includes a first wet cleaning chamber 122a and a second wet cleaning chamber 122b on a second side of the first AMM 110a opposite the first side. In some embodiments, the second AMM includes a radiation chamber 134 and at least one of a plasma chamber 130 or a degassing chamber 132.

[0033]

[0042] In some embodiments, the last AMM of the plurality of AMMs 110, e.g., the third AMM 110c in FIG. 1, includes one or more bonder chambers 140 (two are shown in FIG. 1). In some embodiments, a first of the two bonder chambers is configured to remove and bond chiplets having a first size, and a second of the two bonder chambers is configured to remove and bond chiplets having a second size. In some embodiments, any of the plurality of AMMs 110 includes a metrology chamber 118 configured to perform measurements on one or more types of substrates 112. In FIG. 1, the metrology chamber 118 is illustrated as part of the second AMM 110b coupled to the transfer chamber 116 of the second AMM 110b. However, the metrology chamber 118 may be coupled to or within any of the transfer chambers 116.

[0034]

[0043] Controller 180 controls the operation of any of the multi-chamber processing tools described herein, including multi-chamber processing tool 100. Controller 180 can use direct control of multi-chamber processing tool 100 or, alternatively, by controlling a computer (or controller) associated with multi-chamber processing tool 100. In operation, controller 180 enables data collection and feedback from multi-chamber processing tool 100 to optimize performance of multi-chamber processing tool 100. Controller 180 generally includes a central processing unit (CPU) 182, memory 184, and support circuits 186. CPU 182 may be any form of general-purpose computer processor usable in an industrial environment. Support circuits 186 are conventionally coupled to CPU 182 and may include cache, clock circuits, input / output subsystems, power supplies, etc. Software routines, such as methods described below, can be stored in memory 184 and executed by CPU 182 to transform CPU 182 into a special-purpose computer (controller 180). The software routines may also be stored and / or executed by a second controller (not shown) located remotely from the multi-chamber processing tool 100 .

[0035]

[0044] Memory 184 is a form of computer-readable storage medium containing instructions that, when executed by CPU 182, facilitate the operation of semiconductor processes and equipment. The instructions in memory 184 are in the form of a program product, such as a program, that implements the methods of the present principles. The program code may conform to any one of a number of different programming languages. In one example, the present disclosure may be implemented as a program product stored on a computer-readable storage medium for use with a computer system. The program(s) in the program product define the functions of aspects (including the methods described herein). Exemplary computer-readable storage media include, but are not limited to, non-writable storage media on which information is permanently stored (e.g., a read-only memory device in a computer, such as a CD-ROM disk readable by a CD-ROM drive, flash memory, a ROM chip, or any type of solid-state nonvolatile semiconductor memory), and writable storage media on which changeable information is stored (e.g., a floppy disk in a diskette drive or hard disk drive, or any type of solid-state random-access semiconductor memory). Such computer-readable storage media, when carrying computer-readable instructions that direct the functions of the methods described herein, are aspects of the present principles.

[0036]

[0045] 2 is a schematic top view illustrating a multi-chamber processing tool 200 for bonding chiplets to substrates, according to at least some embodiments of the present disclosure. The multi-chamber processing tool 200 is similar to the multi-chamber processing tool 100, but differs in the configuration of one or more process chambers 106. The multi-chamber processing tool 200 includes three AMMs. In some embodiments, the first AMM 110a includes a first degassing chamber 132a configured to degas a first type of substrate 112a and a second degassing chamber 132b configured to degas a second type of substrate 112b on a first side of the first AMM 110a, and two second wet cleaning chambers 122b on a second side opposite the first side of the first AMM 110a. In some embodiments, the second side of the first AMM 110a may alternatively include two first wet cleaning chambers 122a, or one first wet cleaning chamber 122a and one second wet cleaning chamber 122b.

[0037]

[0046] In some embodiments, the second AMM 110b includes a first plasma chamber 130a and a second plasma chamber 130b on a first side of the second AMM 110b. In some embodiments, a second side of the second AMM 110b opposite the first side includes two first wet cleaning chambers 122a. In some embodiments, the second side of the second AMM 110b includes the first wet cleaning chamber 122a and a radiation chamber 134. In some embodiments, the one or more process chambers 106 of the last AMM, such as the third AMM 110c in FIG. 2, include two bonder chambers 140 and a radiation chamber 134. In some embodiments, the radiation chamber 134 is disposed along the width of the transfer chamber 116. By locating the radiation chamber 134 in the third AMM 110c, the multi-chamber processing tool 200 advantageously includes two additional wet cleaning chambers 122 compared to the multi-chamber processing tool 100.

[0038]

[0047] 3 is a schematic top view illustrating a multi-chamber processing tool 300 for bonding chiplets to a substrate, according to at least some embodiments of the present disclosure. Multi-chamber processing tool 300 is similar to multi-chamber processing tool 200, except that multi-chamber processing tool 300 includes a fourth AMM 110d and a fifth AMM 110e. In some embodiments, the plurality of AMMs 110 includes one or more AMMs having one or more bonder chambers 140 disposed between the first AMM 110a and the last AMM, e.g., the fifth AMM 110e of FIG. 3.

[0039]

[0048] In some embodiments, the multi-chamber processing tool 300 includes six bonder chambers 140, which are configured to process chiplets of the same type and size or chiplets of different types and sizes. In some embodiments, the fifth AMM 110e includes a radiation chamber 134. The modular configuration of the multi-chamber processing tool 300 advantageously facilitates simultaneous bonding of additional substrates and additional types and sizes of chiplets, as compared to the multi-chamber processing tool 200 of FIG. 2 .

[0040]

[0049] 4 is a schematic top view illustrating a multi-chamber processing tool 400 for bonding chiplets to a substrate arranged in a T-configuration, according to at least some embodiments of the present disclosure. The T-configuration of multi-chamber processing tool 400 advantageously reduces the length of the tool compared to a linear layout like multi-chamber processing tool 300, while having the same or similar number of process chambers as multi-chamber processing tool 300.

[0041]

[0050] 4, the plurality of AMMs 110 includes a junction module 410 coupled to the AMM on three sides of the junction module 410. In some embodiments, the plurality of AMMs 110 includes a first AMM 110a coupled to the EFEM 102 and a second AMM 110b coupled to the first AMM 110a at one end and to the junction module 410 at an opposite end. In some embodiments, a third AMM 110c and a fourth AMM 110d are coupled to the junction module 410 on opposite sides of the junction module 410. In some embodiments, a fifth AMM 110e is coupled to the fourth AMM 110d at an end opposite the junction module 410. In some embodiments, the transfer robot 126 in the bonding module 410 is configured to transfer one or more types of substrates 112 between the buffer 120 in the bonding module 410 and the buffers in the third AMM 110c and the fourth AMM 110d. In some embodiments, the bonding module 410 includes a radiation chamber 134 on a side of the bonding module 410 opposite the second AMM 110b.

[0042]

[0051] FIG. 5 is a schematic top view illustrating a multi-chamber processing tool 500 for bonding chiplets to a substrate arranged in a U-shaped configuration, according to at least some embodiments of the present disclosure. The multi-chamber processing tool 500 includes multiple AMMs 110 arranged in a U-shaped configuration. As shown in FIG. 5, a first set of three AMMs 110a-110c are arranged linearly, a second set of three AMMs 110d-110f extend perpendicularly from the first set, and a third set of three AMMs 110g-110i extend perpendicularly from the second set and parallel to the first set. The U-shaped configuration of the multi-chamber processing tool 500 advantageously reduces the length of the tool compared to a linear configuration, such as the multi-chamber processing tool 300 of FIG. 3.

[0043]

[0052] In some embodiments, the second EFEM 502 is coupled to the last AMM of the plurality of AMMs 110. For example, in FIG. 5 , the last, or ninth, AMM 110i is coupled to the second EFEM 502. In some embodiments, the second EFEM 502 includes one or more load ports 514 and the EFEM robot 104. In some embodiments, the one or more load ports 514 include one or more first load ports 514a for receiving a first type of substrate 112a and one or more second load ports 514b for receiving a second type of substrate 112b having multiple tiplets. In some embodiments, the one or more load ports 514 include four second load ports 514b and no first load port 514a. Adding the second EFEM 502 advantageously adds additional load ports and additional scan stations 108 to the tool, increasing processing throughput. Additionally, adding the second EFEM 502 advantageously allows one or more types of substrates 112 to enter the multi-chamber processing tool 500 at one end and exit the other end without having to return to the other end, reducing handling and increasing processing throughput. Reducing the handling of one or more types of substrates 112 may advantageously reduce particle generation and contamination in the multi-chamber processing tool 500. In some embodiments, the EFEM 102 and the second EFEM 502 each have two or more load ports. In some embodiments, the EFEM 102 and the second EFEM 502 both include two or more first load ports 114 a and four or more second load ports 116 b. In some embodiments, the EFEM 102 and the second EFEM 502 both include two first load ports 114 a and six second load ports 116 b. The second EFEM 502 can be added to any of the multi-chamber processing tools described herein.

[0044]

[0053] In some embodiments using a U-shaped configuration, one AMM of the plurality of AMMs 110 may include two buffers 120. While FIG. 5 illustrates the sixth AMM 110f having two buffers 120, any of the second set of three AMMs 110d-110f may include two buffers 120. In some embodiments, the third AMM 110c and the seventh AMM 110g may include a radiation chamber 134. The configuration of one or more process chambers 106 associated with the plurality of AMMs 110 in any of FIGS. 1-5 is exemplary, and the one or more process chambers 106 may be rearranged in any suitable manner for a desired application in any of the multi-chamber processing tools 100, 200, 300, 400, 500, 900, and 1000.

[0045]

[0054] 8 is a flow diagram illustrating a method 800 for bonding a chiplet to a substrate according to at least some embodiments of the present disclosure. At 802, the method 800 includes loading a substrate (e.g., a first type substrate 112a) onto a load port (e.g., substrate load port 114a) of an equipment front end module (EFEM) (e.g., equipment front end module 102) of a multi-chamber processing tool (e.g., multi-chamber processing tool 100, 200, 300, 400, 500, 900, 1000) having multiple AMMs (e.g., multiple AMMs 110).

[0046]

[0055] At 804, method 800 includes using an EFEM robot (e.g., EFEM robot 104) to transfer a first type of substrate to a first buffer (e.g., buffer 120) located in a first AMM (e.g., first AMM 110a) coupled to the EFEM. In some embodiments, the EFEM robot transfers the first type of substrate to a scan station (e.g., scan station 108) within the EFEM prior to transfer to the first buffer, records identification information, and determines process steps based on the identification information. For example, the identification information may indicate at least one of how many different types of chiplets are to be bonded to the first type of substrate, how many layers of chiplets are to be bonded to the first type of substrate, or a desired arrangement of the chiplets when bonding to the first type of substrate. The identification information may also indicate which pre-bonding process steps are required (wet cleaning, plasma etching, degassing, UV treatment, etc.) and process parameters (duration, power, temperature, etc.). The identification information can be read via a board ID reader, such as an OCR reader or a barcode reader.

[0047]

[0056] At 806, the method 800 includes sequentially transferring the first type of substrates from the first buffer via respective transfer robots (e.g., transfer robot 126) in each of the plurality of AMMs to a first wet cleaning chamber (e.g., first wet cleaning chamber 122a) that performs a cleaning process, a first degassing chamber (e.g., first degassing chamber 132a) that performs a degassing process to dry the first type of substrates, a first plasma chamber (e.g., first plasma chamber 130a) that performs a plasma etching process to remove unwanted material from the first type of substrates, and a bonder chamber (e.g., bonder chamber 140).

[0048]

[0057] At 808, method 800 includes using an EFEM robot to transfer a second type substrate (e.g., second type substrate 112b) having a plurality of chiplets from a second load port (e.g., one or more second load ports 114b) to the first buffer. In some embodiments, the EFEM robot transfers the second type substrate to a scanning station within the EFEM prior to transfer to the first buffer, records identification information, and determines a process step based on the identification information. The identification information can be read via an OCR reader or a barcode reader.

[0049]

[0058] At 810, method 800 includes sequentially transferring, via a respective transfer robot for each of the plurality of AMMs, the second type of substrate from the first buffer to a second wet cleaning chamber (e.g., second wet cleaning chamber 122b) that performs a cleaning process, a second degassing chamber (e.g., second degassing chamber 132b) that performs a degassing process to dry the second type of substrate, a second plasma chamber (e.g., second plasma chamber 130b) that performs a plasma etching process to remove unwanted material from the second type of substrate, a radiation chamber (e.g., radiation chamber 134) that performs a radiation process to weaken adhesive bonds between the chiplet and the second type of substrate, and a bonder chamber. In some embodiments, the radiation process is a UV radiation process. In some embodiments, the radiation process is a heating process.

[0050]

[0059] At 812, method 800 includes transferring at least a portion of the plurality of chiplets from a second type of substrate to a first type of substrate in a bonder chamber. At 814, method 800 includes bonding at least a portion of the plurality of chiplets to the first type of substrate in the bonder chamber via a suitable bonding method. In some embodiments, after bonding at least a portion of the plurality of chiplets to the first type of substrate in the bonder chamber, the first type of substrate is transferred to a second bonder chamber. In some embodiments, a second substrate of the second type of substrate is transferred to the second bonder chamber. In some embodiments, the second substrate of the second type of substrate includes a plurality of second chiplets having a different size than the plurality of chiplets. In some embodiments, at least a portion of the plurality of second chiplets are transferred and bonded onto the first type of substrate in the second bonder chamber. At 816, the method 800 includes loading the first type substrate having the bonded chiplets from the last AMM onto a load port of a second EFEM (e.g., a second EFEM) of the multi-chamber processing tool.

[0051]

[0060] In some embodiments, a first type substrate may be transferred to a third bonder chamber for bonding a plurality of chiplets and a plurality of third chiplets having a size different from the plurality of second chiplets to the first type substrate. Thus, a multichamber processing tool may be configured to accommodate N bonder chambers necessary for bonding N different types or sizes of chiplets onto a given substrate. For example, multichamber processing tool 400 of FIG. 4 includes six bonder chambers corresponding to six different types or sizes of chiplets. Once bonding is complete, the first type substrate is returned to the first load port via the buffer and the transfer robot of the multichamber processing tool. Once bonding is complete, the second type substrate may remain in the multichamber processing tool for subsequent processing or subsequent first type substrates, or may be returned to the second load port via the buffer and the transfer robot.

[0052]

[0061] In some embodiments, a plurality of chiplets are arranged along a first layer of chiplets on a first type of substrate. In some embodiments, the first type of substrate with the first layer of chiplets is transferred to a first plasma chamber of a multi-chamber processing tool, where an auxiliary plasma etch process is performed to remove unwanted material. In some embodiments, the first type of substrate is then transferred to a bonding chamber or a second bonding chamber. In the bonding chamber or the second bonding chamber, a plurality of chiplets from a second type of substrate, or a plurality of second chiplets from one of the second type of substrates, are transferred along the second layer of chiplets onto the first layer. The second layer of chiplets may include chiplets of the same type and size as the first layer of chiplets. Alternatively, the second layer of chiplets may include at least one of chiplets of a different type or size than the first layer of chiplets.

[0053]

[0062] In some embodiments, a first type of substrate and a second type of substrate are processed simultaneously in a multi-chamber processing tool. In some embodiments, a plurality of first type of substrates and a plurality of second type of substrates are processed simultaneously in a multi-chamber processing tool to advantageously increase processing throughput. The multi-chamber processing tool may include a second EFEM (e.g., second EFEM 502) or a third EFEM to provide additional load ports and scan stations to advantageously increase processing capacity. For example, at least one of a first substrate of the first type of substrates or a first substrate of the second type of substrates may undergo a wet cleaning process while a second substrate of the first type of substrates undergoes a degassing process and a third substrate of the first type of substrates and a second substrate of the second type of substrates undergo a bonding process. In another example, a first substrate of the first type of substrates and a second substrate of the first type of substrates may undergo a wet cleaning process while a third substrate of the first type of substrates undergoes a degassing process, and a fourth substrate of the first type of substrates and a fifth substrate of the first type of substrates may undergo a bonding process with a first substrate of the second type of substrates and a second substrate of the second type of substrates, respectively. These are non-limiting examples of how multiple first type substrates and second type substrates may be processed in a multi-chamber processing tool.

[0054]

[0063] In some embodiments, a multi-chamber processing tool may be configured to perform a plasma dicing or singulation process using a plasma chamber of the multi-chamber processing tool prior to bonding the chiplets to a first type of substrate. In some embodiments, a multi-chamber processing tool may be configured to perform an additional cleaning or substrate plating process before or after bonding the chiplets to a first type of substrate. Multiple AMMs generally interface with an EFEM to deliver substrates to one or more process chambers associated with each of the AMMs. Thus, an appropriate number of AMMs and associated process chambers may be used to accommodate a desired throughput of processed substrates.

[0055]

[0064] 9 is a schematic top view illustrating a multi-chamber processing tool for bonding chiplets to substrates, according to at least some embodiments of the present disclosure. The multi-chamber processing tool 900 is similar to the multi-chamber processing tool 200, except that it includes a fourth AMM 110d and a second EFEM 502 coupled to the fourth AMM 110d on an opposite side from the EFEM 102. In some embodiments, the radiation chamber 134 is coupled to the fourth AMM 110d, and the second EFEM 502 is coupled to the radiation chamber 134. Such an arrangement advantageously allows the first type of substrate 112a and the second type of substrate 112b to enter the multi-chamber processing tool 900 from the EFEM 102 and exit the second EFEM 502, improving throughput. The second EFEM 502 can be incorporated into any of the tools disclosed herein.

[0056]

[0065] In some embodiments, one or more of the transfer chambers 116 may include a pre-aligner 910 configured to rotate and align the first type substrate 112 a or the second type substrate 112 b to a desired orientation. The pre-aligner 910 may be separate from the buffer 120. In some embodiments, the transfer chamber 116 associated with the AMM 110 having the bonder chamber 140 may include the pre-aligner 910. In some embodiments, the radiation chamber 134 may be configured to rotate one or more types of substrates 112 disposed therein.

[0057]

[0066] FIG. 10 is a schematic top view illustrating a multi-chamber processing tool 1000 for bonding chiplets to substrates, according to at least some embodiments of the present disclosure. The multi-chamber processing tool 1000 may be similar to the multi-chamber processing tool 900, except that it includes multiple EFEMs 102. In some embodiments, any of the multi-chamber processing tools disclosed herein may include multiple EFEMs 102 at one end of the tool and a second EFEM at another end of the tool, as shown, for example, in FIG. 10 . Having multiple EFEMs 102 advantageously increases the capacity of one or more load ports, thus improving throughput. Having multiple EFEMs 102 advantageously provides additional load ports that can easily accommodate additional die types. For example, one EFEM 102 may include two load ports for a first type of substrate 112a and two load ports for a second type of substrate 112b, while another EFEM 102 may include four load ports for the second type of substrate 112b. The second type of substrate 112b can include different types and sizes of die.

[0058]

[0067] In some embodiments, a transfer chamber 116 may be disposed between each of the EFEMs 102 and the first AMM 110a. In some embodiments, the transfer chamber 116 may include one or more shelves 1010 configured to hold and rotate one or more types of substrates 112. In some embodiments, the transfer chamber may include one or more of the one or more shelves 1010 on either side of a transfer robot 126 disposed within the transfer chamber 116. The transfer robot 126 may be configured to transfer the substrates 112 from the one or more shelves 1010 to the first AMM 110a.

[0059]

[0068] While the forgoing is directed to embodiments of the present disclosure, other and further embodiments of the disclosure may be devised without departing from the basic scope thereof.

Claims

1. 1. A multi-chamber processing tool for processing a substrate, comprising: a first equipment front end module (EFEM) having one or more load ports for receiving one or more types of substrates; a second EFEM located on an opposite side of the multi-chamber processing tool from the first EFEM, the second EFEM having one or more load ports for receiving one or more types of substrates; A plurality of interconnected atmospheric modular mainframes (AMMs), a first AMM coupled to the first EFEM and a last AMM coupled to the second EFEM; each of the plurality of AMMs includes a transfer chamber and one or more process chambers coupled to the transfer chamber; a plurality of AMMs, the transfer chamber including a buffer configured to hold a plurality of the one or more types of substrates, and a transfer robot configured to transfer the one or more types of substrates between the buffer, the one or more process chambers, and buffers disposed in adjacent AMMs of the plurality of AMMs; Equipped with one or more process chambers of the last AMM of the plurality of AMMs include one or more bonder chambers configured to remove a plurality of chiplets from a second type substrate having the plurality of chiplets and bond the plurality of chiplets onto a first type substrate; Multi-chamber processing tool.

2. the one or more load ports of the first EFEM include one or more first load ports for receiving the first type of substrate and one or more second load ports for receiving the second type of substrate having the plurality of chiplets; the one or more process chambers of each of the plurality of AMMs include at least one of a wet clean chamber, a plasma chamber, a degassing chamber, a radiation chamber, or a bonder chamber, such that the multi-chamber processing tool includes at least one wet clean chamber, at least one plasma chamber, at least one degassing chamber, at least one radiation chamber, and at least one bonder chamber; The multi-chamber processing tool of claim 1 .

3. the one or more process chambers of the first AMM include at least one of a plasma chamber or a degassing chamber, and include a wet clean chamber; The multi-chamber processing tool of claim 2 .

4. the at least one wet clean chamber includes a first wet clean chamber for cleaning the first type of substrate and a second wet clean chamber for cleaning the second type of substrate; the at least one plasma chamber includes a first plasma chamber for processing the first type of substrate and a second plasma chamber for processing the second type of substrate; 3. The multi-chamber processing tool of claim 2, wherein the at least one degassing chamber comprises a first degassing chamber for processing the first type of substrate and a second degassing chamber for processing the second type of substrate.

5. The multi-chamber processing tool of claim 1 , wherein the transfer chamber is a non-vacuum chamber.

6. 5. The multi-chamber processing tool of claim 1, wherein the plurality of AMMs includes one or more AMMs having one or more bonder chambers disposed between the first AMM and a last AMM.

7. the plurality of AMMs include a first AMM coupled to the first EFEM, a second AMM coupled to the first AMM at one end and coupled to a junction module at an opposite end, a third AMM and a fourth AMM coupled to the junction module on opposite sides of the junction module, and a fifth AMM coupled to the fourth AMM at an end opposite the junction module; The multi-chamber processing tool of claim 1 , wherein the bonding module includes a buffer and a transfer robot.

8. the second EFEM includes an EFEM robot; The multi-chamber processing tool of claim 1 , wherein the plurality of AMMs are arranged in a linear or U-shaped configuration.

9. The multi-chamber processing tool of claim 1 , wherein the first EFEM includes a scan station having a substrate ID reader.

10. A multi-chamber processing tool for processing a substrate, comprising: a first equipment front-end module (EFEM); a second EFEM located on an opposite side of the multi-chamber processing tool from the first EFEM; and A plurality of interconnected atmospheric modular mainframes (AMMs), a first AMM coupled to the first EFEM and a last AMM coupled to the second EFEM; each of the plurality of AMMs includes a transfer chamber and one or more process chambers coupled to the transfer chamber; a plurality of AMMs, the transfer chamber including a buffer configured to hold a plurality of the one or more types of substrates, and a transfer robot configured to transfer the one or more types of substrates between the buffer, the one or more process chambers, and buffers disposed in adjacent AMMs of the plurality of AMMs; Equipped with the first EFEM includes one or more first load ports for accepting a first type of substrate, one or more second load ports for accepting a second type of substrate having a plurality of tiplets, and an EFEM robot configured to transfer the first type of substrate and the second type of substrate; the second EFEM includes one or more first load ports for accepting a first type of substrate, one or more second load ports for accepting a second type of substrate having a plurality of tiplets, and an EFEM robot configured to transfer the first type of substrate and the second type of substrate; the one or more process chambers of the first AMM include at least one of a plasma chamber or a degassing chamber, and include a wet clean chamber; the one or more process chambers of a second AMM of the plurality of AMMs coupled to the first AMM include at least one of a plasma chamber or a degassing chamber; one or more process chambers of a third AMM of the plurality of AMMs coupled to the second AMM include one or more bonder chambers configured to remove a plurality of chiplets from a second type of substrate and bond the plurality of chiplets onto a first type of substrate; Multi-chamber processing tool.

11. the one or more process chambers of the third AMM include two bonder chambers; a first bonder chamber of the two bonder chambers configured to remove and bond chiplets having a first size; a second of the two bonder chambers configured to remove and bond chiplets having a second size; The multi-chamber processing tool of claim 10.

12. The multi-chamber processing tool of claim 10 , wherein the buffer is configured to rotate and align the second type of substrate.

13. 13. The multi-chamber processing tool of claim 10, wherein the EFEM robot and the transfer robot include a first end effector for handling the first type of substrate and a second end effector for handling the second type of substrate.

14. 13. The multi-chamber processing tool of claim 10, wherein the transfer robot is configured for rotational and linear movement within the transfer chamber.

15. 1. A method of bonding a plurality of chiplets onto a substrate, comprising: loading a first type of substrate onto a first load port of an equipment front end module (EFEM) of a multi-chamber processing tool having a plurality of atmospheric modular mainframes (AMMs); using an EFEM robot to transfer the first type of substrate to a first buffer located on a first AMM coupled to the EFEM; Successively transferring the first type of substrates from the first buffer to a first wet cleaning chamber for performing a cleaning process, a first degassing chamber for performing a degassing process for drying the first type of substrates, a first plasma chamber for performing a plasma etching process for removing unwanted material from the first type of substrates, and a bonder chamber; using the EFEM robot to transfer a second type substrate having a plurality of chiplets to the first buffer; sequentially transferring the second type substrate from the first buffer to a second wet cleaning chamber performing a cleaning process, a second degassing chamber performing a degassing process to dry the second type substrate, a second plasma chamber performing a plasma etching process to remove unwanted material from the second type substrate, a radiation chamber performing a radiation process to weaken bonds between the plurality of chiplets and the second type substrate, and the bonder chamber; transferring at least a portion of the plurality of chiplets from the second type substrate to the first type substrate in the bonder chamber; bonding the at least some of the plurality of chiplets to the first type substrate in the bonder chamber; loading the first type substrate having the plurality of bonded chiplets from a last AMM onto a load port of a second EFEM of the multi-chamber processing tool; A method comprising:

16. using the EFEM robot to transfer the first type substrate and the second type substrate to a scan station of a first EFEM before transferring them to the first buffer to record identification information and determine a process step based on the recorded identification information; 16. The method of claim 15, further comprising:

17. transferring the first type substrate to a second bonder chamber; transferring a second substrate of the second type of substrate to the second bonder chamber, the second substrate of the second type of substrate including a second plurality of chiplets having a different size than the plurality of chiplets; transferring at least a portion of the plurality of second chiplets onto the first type substrate; 16. The method of claim 15, further comprising:

18. the plurality of chiplets are arranged along a first chiplet layer on the first type substrate; transferring the first type substrate having the first layer of chiplets to the first plasma chamber for performing an auxiliary plasma etching process to remove unwanted material; transferring the first type substrate to the bonder chamber or a second bonder chamber; transferring the plurality of chiplets from the second type of substrate or a plurality of second chiplets from a second one of the second type of substrates onto the layer of first chiplets in the bonder chamber or the second bonder chamber; 16. The method of claim 15, further comprising:

19. 19. The method of any one of claims 15 to 18, wherein the first type of substrate and the second type of substrate are processed simultaneously.

20. 19. The method of any one of claims 15 to 18, wherein a plurality of the first type substrates and a plurality of the second type substrates are processed simultaneously in the multi-chamber processing tool.

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