Ruthenium pyrazolate precursors and analogous methods for atomic layer deposition

Abstract

The disclosed and claimed invention relates to ruthenium pyrazolate precursors and derivatives thereof, and their use in ALD or ALD-like processes and films grown by such processes. In particular, substituted saturated pyrazolate-bridged diruthenium carbonyl complexes are disclosed.

Description

[Technical Field]

[0001] The disclosed and claimed invention relates to metal-containing precursors for use in atomic layer deposition (ALD) and ALD-like processes for selectively growing metal-containing films on at least one substrate. Specifically, the disclosed and claimed invention relates to ruthenium pyrazolate precursors and derivatives thereof useful in ALD and ALD-like processes. [Background technology]

[0002] Thin films, especially metal-containing thin films, have a variety of important applications in nanotechnology and semiconductor device fabrication. Examples of such applications include high-refractive-index optical coatings, corrosion-protective coatings, photocatalytic self-cleaning glass coatings, biocompatible coatings, dielectric capacitor layers and gate dielectric insulating films in field-effect transistors (FETs), capacitor electrodes, gate electrodes, adhesion diffusion barriers, and integrated circuits. Metallic and dielectric thin films are also used in microelectronics applications, such as high-κ dielectric oxides for dynamic random access memory (DRAM) applications and ferroelectric perovskites used in infrared detectors and nonvolatile ferroelectric random access memory (NV-FeRAM).

[0003] A variety of precursors can be used to form metal-containing thin films, and a variety of deposition techniques can be utilized, including reactive sputtering, ion-assisted deposition, sol-gel deposition, chemical vapor deposition (CVD) (also known as metalorganic CVD or MOCVD), and atomic layer deposition (ALD) (also known as atomic layer epitaxy). CVD and ALD techniques are increasingly being used because they offer the advantages of enhanced composition control, high film uniformity, and effective control of doping.

[0004] Conventional CVD is a chemical process in which precursors are used to form thin films on a substrate surface. In a typical CVD method, precursors are flowed onto the surface of a substrate (e.g., a wafer) in a low-pressure or ambient-pressure reaction chamber. The precursors react and / or decompose on the substrate surface to form a thin film of deposited material. Non-volatile by-products are removed by flowing gas through the reaction chamber. The deposited film thickness can be difficult to control because it depends on the coordination of many parameters, such as temperature, pressure, gas volumetric flow rate and uniformity, chemical depletion effects, and time.

[0005] ALD is also a method for the deposition of thin films. It is a unique, self-limiting, continuous film growth technique based on surface reactions that can provide precise thickness control and deposit conformal thin films of precursor-provided materials onto substrates of various compositions. In ALD, precursors are separated during the reaction. A first precursor is flowed onto the substrate surface, producing a monolayer on the substrate surface. Excess unreacted precursor is vented from the reaction chamber. A second precursor is then flowed onto the substrate surface and reacts with the first precursor to form a second monolayer of film on the substrate surface. This cycle is repeated until a film of the desired thickness is formed.

[0006] In conventional chemical vapor deposition (CVD) processes, precursors and co-reactants are introduced into a deposition chamber via the gas phase to deposit a thin film on a substrate. In atomic layer deposition (ALD) or ALD-like processes, precursors and co-reactants are introduced sequentially into the deposition chamber, thereby achieving atomic-level growth of thin films, enabling surface-controlled layer-by-layer deposition and, importantly, self-limiting surface reactions. The key to successful ALD deposition processes is the use of precursors that undergo a reaction scheme consisting of a series of individual, self-limiting adsorption and reaction steps. One of the major advantages of ALD processes is that they offer significantly greater conformality than CVD for substrates with high aspect ratios, such as those greater than 8. [Prior art documents] [Non-patent literature]

[0007] [Non-Patent Document 1] Song, Yi-Hwa, et al., “A Study of Unsaturated Pyrazolate-Bridged Diruthenium Carbonyl Complexes”, Organometallics 2002, 21, p. 4735-4742 [Non-patent document 2] Song, Yi-Hwa, et al., “Deposition of Conductive Ru and RuO2 Thin Films Employing a Pyrazolate Complex[Ru(CO)3(3,5-(CF3)2-pz)]2 as the CVD Source Reagent”, Chemical Vapor Deposition, 2003, V9(3), p.162-169 [Non-patent document 3] George SM,et al.J.Phys.Chem.,1996,100,13121-13131 [Non-patent document 4] Chemical Vapor Deposition:Precursors,Processes,and Applications;Jones,AC;Hitchman,ML,Eds.,The Royal Society of Chemistry:Cambridge,2009;Chapter 1,pp 1-36 Summary of the Invention [Problem to be solved by the invention]

[0008] However, the constantly shrinking size of microelectronic components, such as semiconductor devices, presents several technical challenges and a growing demand for improved thin-film technologies. In particular, microelectronic components may contain features on or within a substrate that require filling, for example, to form conductive paths or interconnects. Filling such features, especially in smaller microelectronic components, can be challenging because these features can become increasingly thin or narrow. As a result, complete filling of a feature, for example, by ALD, would require infinitely long cycle times as the feature thickness approaches zero. Furthermore, when the feature thickness becomes thinner than the molecular size of the precursor, the feature cannot be completely filled. As a result, ALD may leave a hollow seam in the center of the feature. The presence of such a hollow seam within the feature is undesirable because it can lead to device failure. Therefore, there is significant interest in developing thin-film deposition methods, particularly ALD methods, that can selectively grow films on more than one substrate and achieve improved filling of features on or within a substrate, such as depositing a metal-containing film such that the feature is substantially filled without voids.

[0009] Several ruthenium pyrazolate precursors have been disclosed and used in conventional CVD processes at high temperatures ranging from 300 to 450°C. See, for example, Song, Yi-Hwa, et al., "A Study of Unsaturated Pyrazolate-Bridged Diruthenium Carbonyl Complexes," Organometallics 2002, 21, pp. 4735-4742 (Non-Patent Document 1) and Song, Yi-Hwa, et al., "Deposition of Conductive Ru and RuO Thin Films Employing a Pyrazolate Complex [Ru(CO)(3,5-(CF)-pz)] as the CVD Source Reagent," Chemical Vapor Deposition, 2003, V9(3), pp. 162-169 (Non-Patent Document 2). However, their use in ALD and ALD-like (e.g., cyclic CVD) processes at temperatures below 300°C has not been demonstrated. [Means for solving the problem]

[0010] In one aspect, the disclosed and claimed invention relates to a ruthenium pyrazolate precursor of formula I:

[0011] [ka] In the formula, R 1、 R2, R3, and R4 are each independently a substituted or unsubstituted C1 to C 20 Linear, branched or cyclic alkyl, and substituted or unsubstituted C1-C 20and n is 2 or 3. In another aspect of this embodiment, R1, R2, R3, and R4 are each independently one of —CH3, —CH2CH3, CH2CH2CH3, CH(CH3)2, —CH2CH(CH3)2, and —C(CH3)3. The Ru-Pz precursor is a member of the class of compounds represented by Formula I. In another aspect of this embodiment, one or more of R1, R2, R3, and R4 are each independently one of CF3, —CF2CF3, —CF2CF2CF3, —CF(CF3)2, —C(CF3)3, and any substituted or unsubstituted C1-C8 perfluoroalkyl. In another aspect of this embodiment, R1 and R4 are each the same group. In another aspect of this embodiment, R2 and R3 are each the same group. In another aspect of this embodiment, R1, R2, R3, and R4 are each the same group. In one aspect of this embodiment, n is 2. In one aspect of this embodiment, n is 3.

[0012] In another aspect, the disclosed and claimed invention relates to the use of precursors having Formula I in ALD and ALD-like processes. In yet another aspect of this embodiment, the ALD or ALD-like process includes depositing a ruthenium-containing layer derived from a precursor of Formula I on a substrate surface. In yet another aspect of this embodiment, the ALD or ALD-like process using precursors having Formula I is applied to grow films on substrates including one or more of Al2O3, ZrO2, HfO2, and SiO2, non-oxides such as WCN, WN, and TiN, or metal surfaces such as Cu, Co, Mo, or W. In yet another aspect of this embodiment, the process includes the use of a co-reactant.

[0013] In another aspect, the disclosed and claimed invention relates to films grown from precursors having formula I. In yet another aspect of this embodiment, these films are grown on substrates including one or more of Al2O3, ZrO2, HfO2, and SiO2, non-oxides such as WCN, WN, and TiN, or metal surfaces such as Cu, Co, Mo, or W.

[0014] In one aspect, the disclosed and claimed invention relates to ruthenium pyrazolate precursors (herein “Ru-Pz1”) having the following structure, and derivatives thereof, for use in ALD or ALD-like processes:

[0015] [ka] In yet another aspect of this embodiment, the ALD or ALD-like process is applied to grow films on substrates including one or more oxide substrates or surfaces, such as Al2O3, ZrO2, HfO2, and SiO2; non-oxide substrates, such as WCN, WN, and TiN; or metal surfaces, such as Cu, Co, Mo, or W. In yet another aspect of this embodiment, the ALD or ALD-like process is performed at a temperature less than approximately 300°C. In yet another aspect of this embodiment, the ALD or ALD-like process is performed at a temperature less than approximately 275°C. In yet another aspect of this embodiment, the ALD or ALD-like process is performed at a temperature less than approximately 250°C. In yet another aspect of this embodiment, the ALD or ALD-like process is performed at a temperature ranging from approximately 200°C to approximately 300°C. In yet another aspect of this embodiment, the ALD or ALD-like process is performed at a temperature ranging from approximately 235°C to approximately 300°C.

[0016] Among other things, the Ru-Pz1 precursor (i) is solid at room temperature, (ii) is thermally stable, (iii) has sufficient vapor pressure to allow evaporation at standard operating temperatures and pressures, and (iv) can be used to deposit Ru films (as deposited) with resistivities of only approximately 20 μΩ-cm at approximately 275°C.

[0017] In one aspect, the disclosed and claimed invention relates to ruthenium pyrazolate precursors (herein “Ru-Pz2”) having the following structure, and derivatives thereof, for use in ALD or ALD-like processes:

[0018] [ka] In yet another aspect of this embodiment, the ALD or ALD-like process is applied to grow films on substrates including one or more oxide substrates or surfaces, such as Al2O3, ZrO2, HfO2, and SiO2; non-oxide substrates, such as WCN, WN, and TiN; or metal surfaces, such as Cu, Co, Mo, or W. In yet another aspect of this embodiment, the ALD or ALD-like process is performed at a temperature less than approximately 300°C. In yet another aspect of this embodiment, the ALD or ALD-like process is performed at a temperature less than approximately 275°C. In yet another aspect of this embodiment, the ALD or ALD-like process is performed at a temperature less than approximately 250°C. In yet another aspect of this embodiment, the ALD or ALD-like process is performed at a temperature ranging from approximately 200°C to approximately 300°C. In yet another aspect of this embodiment, the ALD or ALD-like process is performed at a temperature ranging from approximately 235°C to approximately 300°C.

[0019] In one aspect, the disclosed and claimed invention relates to ruthenium pyrazolate precursors (herein “Ru-Pz3”) having the following structure, and derivatives thereof, for use in ALD or ALD-like processes:

[0020] [ka] In yet another aspect of this embodiment, the ALD or ALD-like process is applied to grow films on substrates including one or more oxide substrates or surfaces, such as Al2O3, ZrO2, HfO2, and SiO2; non-oxide substrates, such as WCN, WN, and TiN; or metal surfaces, such as Cu, Co, Mo, or W. In yet another aspect of this embodiment, the ALD or ALD-like process is performed at a temperature less than approximately 300°C. In yet another aspect of this embodiment, the ALD or ALD-like process is performed at a temperature less than approximately 275°C. In yet another aspect of this embodiment, the ALD or ALD-like process is performed at a temperature less than approximately 250°C. In yet another aspect of this embodiment, the ALD or ALD-like process is performed at a temperature ranging from approximately 200°C to approximately 300°C. In yet another aspect of this embodiment, the ALD or ALD-like process is performed at a temperature ranging from approximately 235°C to approximately 300°C.

[0021] In another aspect, the disclosed and claimed invention relates to ruthenium pyrazolate precursors (herein “Ru-Pz4”) having the following structure, and derivatives thereof, for use in ALD or ALD-like processes:

[0022] [ka] In yet another aspect of this embodiment, the ALD or ALD-like process is applied to grow films on substrates including one or more oxide substrates or surfaces, such as Al2O3, ZrO2, HfO2, and SiO2; non-oxide substrates, such as WCN, WN, and TiN; or metal surfaces, such as Cu, Co, Mo, or W. In yet another aspect of this embodiment, the ALD or ALD-like process is performed at a temperature less than approximately 300°C. In yet another aspect of this embodiment, the ALD or ALD-like process is performed at a temperature less than approximately 275°C. In yet another aspect of this embodiment, the ALD or ALD-like process is performed at a temperature less than approximately 250°C. In yet another aspect of this embodiment, the ALD or ALD-like process is performed at a temperature ranging from approximately 200°C to approximately 300°C. In yet another aspect of this embodiment, the ALD or ALD-like process is performed at a temperature ranging from approximately 235°C to approximately 300°C.

[0023] In another aspect, the disclosed and claimed invention relates to ruthenium pyrazolate precursors (herein “Ru-Pz5”) having the following structure, and derivatives thereof, for use in ALD or ALD-like processes:

[0024] [ka] In yet another aspect of this embodiment, the ALD or ALD-like process is applied to grow films on substrates including one or more oxide substrates or surfaces, such as Al2O3, ZrO2, HfO2, and SiO2; non-oxide substrates, such as WCN, WN, and TiN; or metal surfaces, such as Cu, Co, Mo, or W. In yet another aspect of this embodiment, the ALD or ALD-like process is performed at a temperature less than approximately 300°C. In yet another aspect of this embodiment, the ALD or ALD-like process is performed at a temperature less than approximately 275°C. In yet another aspect of this embodiment, the ALD or ALD-like process is performed at a temperature less than approximately 250°C. In yet another aspect of this embodiment, the ALD or ALD-like process is performed at a temperature ranging from approximately 200°C to approximately 300°C. In yet another aspect of this embodiment, the ALD or ALD-like process is performed at a temperature ranging from approximately 235°C to approximately 300°C.

[0025] In another aspect, the disclosed and claimed invention relates to films grown from Ru-Pz precursors and their derivatives. In yet another aspect of this embodiment, the films are grown on oxide substrates or surfaces, such as Al2O3, ZrO2, HfO2, and SiO2, non-oxides, such as WCN, WN, and TiN, or metal surfaces, such as Cu, Co, Mo, or W.

[0026] In one aspect, the disclosed and claimed invention relates to Ru-containing films grown by ALD or ALD-like methods using Ru-Pz precursors with alternating pulses of a carrier gas (e.g., H). Such films grown at 255°C exhibit low resistivity. Such films can be thin (approximately 10-150 Å) or thicker. Relatively thin films, on the order of roughly 150 Å, exhibit resistivities of approximately 20 μOhm·cm.

[0027] In another aspect, the disclosed and claimed invention relates to the use of Ru-Pz precursors in ALD and ALD-like processes.

[0028] This summary section is not intended to identify every aspect and / or novel aspect of the disclosed and claimed invention. Instead, this summary provides only a preliminary description of various aspects and corresponding points of novelty over conventional and known techniques. For additional details and / or possible perspectives of the disclosed and claimed invention and aspects, please refer to the detailed description of the invention and corresponding drawings, further described below.

[0029] The order in which the different steps described herein are presented is provided for purposes of clarity. In general, the steps disclosed herein may be performed in any suitable order. Additionally, although different features, techniques, arrangements, etc. described herein may each be described in different parts of the specification, it is intended that each of these concepts can be practiced independently of each other or in combination with each other, where appropriate. Thus, the invention as disclosed and claimed can be embodied and viewed in many different ways.

[0030] The accompanying drawings provide a further understanding of the disclosed invention, and are incorporated in and constitute a part of this specification, illustrate embodiments of the disclosed invention, and together with the description, serve to explain the principles of the disclosed invention. [Brief explanation of the drawings]

[0031] [Figure 1] Figure 1 shows the TGA / DSC analysis of Ru-Pz1, Ru-Pz2, and Ru-Pz3 precursors, demonstrating their stability and volatility. [Figure 2] FIG. 2 shows the Ru growth rate and resistance as a function of Ru-Pz1 ampoule temperature and vapor pressure. [Figure 3] FIG. 3 shows the growth rate and resistance versus reactor pressure. [Figure 4A] FIG. 4 shows the Ru resistivity and growth / cycles as a function of deposition temperature for Ru films grown from the Ru-Pz1 precursor. [Figure 4B]FIG. 4 shows the Ru resistivity and growth / cycles as a function of deposition temperature for Ru films grown from the Ru-Pz1 precursor. [Figure 5] FIG. 5 shows the uniformity (on an 8-inch cross-flow deposition chamber) of Ru films grown from the Ru-Pz1 precursor when deposited at 255-275°C. [Figure 6] FIG. 6 shows the thickness and growth / cycle at 245° C. as a function of cycle number for Ru films grown from the Ru-Pz1 precursor. [Figure 7] FIG. 7 shows the resistivity as a function of film thickness for Ru films grown from the Ru-Pz1 precursor. [Figure 8A] FIG. 8 shows the effect of purge length on the growth of Ru films grown from Ru-Pz1 precursor at 245°C. [Figure 8B] FIG. 8 shows the effect of purge length on the growth of Ru films grown from Ru-Pz1 precursor at 245°C. [Figure 9] Figure 9 shows the XPS analysis of thick Ru films grown from Ru-Pz1 precursors deposited on native SiO2. [Figure 10] FIG. 10 shows the XPS analysis of a thin Ru film grown from the Ru-Pz1 precursor deposited on Al2O3. [Figure 11] FIG. 11 shows the morphology of the films at 275° C. (200 cycles) on Al 2 O 3 , SiO 2 and TiN surfaces. [Figure 12] FIG. 12 shows the conformality of Ru films grown from Ru-Pz1 precursors (400 cycles of alternating Pu-Pz and H2 at 275° C.) on vias with an aspect ratio of 20:1. [Figure 13] Figure 13 shows the conformality of Ru films grown from Ru-Pz precursors (400 cycles of alternating Pu-Pz and H2 at 275 °C) on 20:1 aspect ratio vias with higher magnification photomicrographs centered on the top and bottom of the via. [Figure 14] FIG. 14 shows the deposition of Ru films grown from Ru-Pz1 in the absence of H2 (275°C) in a cross-flow reactor. [Figure 15]Figure 15 shows RBS data showing that at 2.024 MeV, only Ru and Si elements can be quantified above the detection limit (filled symbols are collected data, solid lines are fits to the RBS spectrum using SIMNRA software). [Figure 16] Figure 16 shows RBS data showing that at 3.043 MeV, only Ru and Si elements can be quantified above the detection limit (filled symbols are collected data, solid lines are fits to the RBS spectrum using SIMNRA software). [Figure 17] FIG. 17 shows RBS data showing that at 4.282 MeV, only Ru and Si elements can be quantified above the detection limit (filled symbols are collected data, solid lines are fits to the RBS spectrum using SIMNRA software). [Figure 18] FIG. 18 shows RBS data demonstrating that carbon is not detectable in Ru films grown from Ru-Pz precursors using H2 (275 °C) in a cross-flow reactor, and how simulated carbon concentrations are measured to quantify the detection limit. [Figure 19] FIG. 19 shows RBS data demonstrating that oxygen is not detectable in Ru films grown from Ru-Pz precursors using H2 (275 °C) in a cross-flow reactor, and how simulated carbon concentrations are measured to quantify the detection limit. [Figure 20] FIG. 20 shows the conclusion of the RBS analysis of a Ru film having 255 monolayers of Ru on a Si substrate and 22 monolayers of "C0.5H0.5" on top due to contamination from the ambient air. [Figure 21] FIG. 21 shows the XRD showing the Ru phase.

[0032] definition Unless otherwise stated, the following terms used in the specification and claims have the following meanings in this application.

[0033] For purposes of this invention and the claims thereto, the numbering convention for the Periodic Table Groups follows the IUPAC Periodic Table of the Elements.

[0034] As used herein, the term "and / or" as used in phrases such as "A and / or B" is intended to include "A and B," "A or B," or "A" and "B."

[0035] The terms "substituent," "residue," "group," and "moiety" may be used interchangeably.

[0036] As used herein, the terms "metal-containing complex" (or more simply, "complex") and "precursor" are used interchangeably and refer to a metal-containing molecule or compound that can be used to produce a metal-containing film by a vapor deposition method such as ALD or CVD. The metal-containing complex can be deposited, adsorbed, decomposed, delivered, and / or distributed onto a substrate or surface thereof such that a metal-containing film is formed.

[0037] As used herein, the term "metal-containing film" includes not only elemental metal films, as defined in more detail below, but also films that contain one or more elements in addition to metal, such as metal oxide films, metal nitride films, metal silicide films, metal carbide films, and similar films. As used herein, the terms "elemental metal film" and "pure metal film" are used interchangeably and refer to films that consist of or essentially consist of pure metal. For example, an elemental metal film may contain 100% pure metal, or an elemental metal film may contain at least about 70%, at least about 80%, at least about 90%, at least about 95%, at least about 96%, at least about 97%, at least about 98%, at least about 99%, at least about 99.9%, or at least about 99.99% pure metal, along with one or more impurities. Unless the context indicates otherwise, the term "metal film" shall be interpreted to mean an elemental metal film.

[0038] As used herein, the term "vapor deposition method" refers to any type of vapor deposition technique, including, but not limited to, CVD and ALD. In various embodiments, it can take the form of conventional (i.e., continuous flow) CVD, liquid injection CVD, or photo-assisted CVD. CVD can also take the form of a pulsed technique, i.e., pulsed CVD. ALD is used to form metal-containing films by evaporating and / or flowing at least one metal complex disclosed herein onto a substrate surface. For conventional ALD methods, see, for example, George S. M., et al., J. Phys. Chem., 1996, 100, 13121-13131. In other embodiments, ALD can take the form of conventional (i.e., pulsed injection) ALD, liquid injection ALD, photo-assisted ALD, plasma-assisted ALD, or plasma-enhanced ALD. The term "vapor deposition method" also encompasses various vapor deposition techniques described in Chemical Vapor Deposition: Precursors, Processes, and Applications; Jones, AC; Hitchman, ML, Eds., The Royal Society of Chemistry: Cambridge, 2009; Chapter 1, pp 1-36 (Non-Patent Document 4).

[0039] Throughout this specification, the terms “ALD or ALD-like” or “ALD and ALD-like” refer to, but are not limited to, a process that includes the following steps: (i) sequentially introducing each reactant, including a Ru-Pz precursor and a reactive gas, into a reactor, such as a single-wafer ALD reactor, a semi-batch ALD reactor, or a batch furnace reactor; and (ii) exposing a substrate to each reactant, including the Ru-Pz precursor and a reactive gas, by moving or rotating the substrate through different compartments of the reactor, where each compartment is separated by an inert gas curtain, i.e., a spatial ALD reactor or a roll-to-roll ALD reactor. A typical cycle of an ALD or ALD-like process includes at least four steps, as described above.

[0040] As used herein, the term "feature" refers to an opening in a substrate that may be defined by one or more sidewalls, a bottom, and a top corner. In various aspects, the feature may be a via, a trench, a contact, a dual damascene, etc.

[0041] The term "about" or "approximately," when used in connection with a measurable variable, refers to the stated value of the variable, as well as all values ​​of the variable that are within experimental error of the stated value (e.g., within a 95% confidence limit of the mean) or within a percentage of the stated value (e.g., within ±10%, within ±5%), whichever is greater.

[0042] The disclosed and claimed precursors are preferably substantially free of water. As used herein, "substantially free," when referring to water, means less than 5000 ppm by weight as measured by proton NMR or Karl Fischer titration, preferably less than 3000 ppm as measured by proton NMR or Karl Fischer titration, more preferably less than 1000 ppm as measured by proton NMR or Karl Fischer titration, and most preferably less than 100 ppm as measured by proton NMR or Karl Fischer titration.

[0043] The disclosed and claimed precursors preferably contain metal ions or metals, such as Li + (Li), Na + (Na), K + (K), Mg 2+ (Mg), Ca 2+ (Ca), Al 3+ (Al), Fe 2+ (Fe), Fe 3+ (Fe), Ni 2+ (Fe), Cr 3+The precursor is also substantially free of Li, Na, K, Mg, Ca, Al, Fe, Ni, Cr, Ti, V, Mn, Co, Ni, Cu, or Zinc (Zn). These metal ions or metals are potentially present from the raw materials / reactors used to synthesize the precursor. As used herein, "substantially free" means less than 5 ppm (by weight), preferably less than 3 ppm, more preferably less than 1 ppm, and most preferably less than 0.1 ppm, as measured by ICP-MS, when referring to Li, Na, K, Mg, Ca, Al, Fe, Ni, Cr, Ti, V, Mn, Co, Ni, Cu, or Zn.

[0044] Unless otherwise specified, "alkyl" refers to a C1-C6 alkyl group that can be linear, branched (e.g., methyl, ethyl, propyl, isopropyl, tert-butyl, and the like), or cyclic (e.g., cyclohexyl, cyclopropyl, cyclopentyl, and the like). 20 The term "alkyl" refers to a hydrocarbon group, the alkyl portion of which may be substituted or unsubstituted as described below. 20 The term "alkyl" refers to such a moiety having carbon atoms. For structural reasons, linear alkyl is understood to start from C1, while branched alkyl and cyclic alkyl are understood to start from C3. Furthermore, moieties derived from alkyl as described below, such as alkyloxy and perfluoroalkyl, are understood to have the same carbon number range unless otherwise specified. When a different alkyl group length is specified, the above definition of alkyl is still valid in that it encompasses all types of alkyl moieties, and the above structural considerations regarding the minimum carbon number of a given type of alkyl group still apply.

[0045] Halo or halide refers to a halogen, F, Cl, Br, or I, attached to an organic moiety by one bond. In some embodiments, the halogen is F. In other embodiments, the halogen is Cl.

[0046] Alkyl halides are fully or partially halogenated C1-C20 refers to alkyl.

[0047] Perfluoroalkyl refers to a linear, cyclic, or branched saturated alkyl group as defined above in which all hydrogens have been replaced with fluorines (e.g., trifluoromethyl, perfluoroethyl, perfluoropropyl, perfluorobutyl, perfluoroisopropyl, perfluorocyclohexyl, and the like).

[0048] The disclosed and claimed precursors are preferably substantially free of organic impurities derived from raw materials used during synthesis or by-products generated during synthesis. Examples include, but are not limited to, alkanes, alkenes, alkynes, dienes, ethers, esters, acetates, amines, ketones, amides, aromatic compounds, and the like. As used herein, "free" of organic impurities means 1000 ppm or less by weight as measured by GC, preferably 500 ppm or less by weight as measured by GC, and most preferably 100 ppm or less by weight as measured by GC or other analytical characterization. Importantly, the precursors preferably have a purity of 98% by weight or greater, more preferably 99% by weight or greater, as measured by GC, when used as precursors for depositing ruthenium-containing films.

[0049] The section headings used herein are for organizational purposes only and should not be construed as limiting the subject matter described. All references or portions thereof cited herein, including but not limited to patents, patent applications, papers, books, and treatises, are incorporated herein in their entirety for all purposes. In the event that the definitions of terms in any of the references and similar materials cited herein conflict with those herein, the definitions herein shall control. DETAILED DESCRIPTION OF THE INVENTION

[0050] It should be understood that both the foregoing general description and the following detailed description are exemplary and explanatory only and are not intended to be limiting with respect to the invention as claimed. The objects, features, advantages, and concepts of the disclosed invention will be apparent to those skilled in the art from the description set forth herein, and the disclosed invention can be readily implemented by those skilled in the art based on the description set forth herein. The description of "preferred embodiments" and / or examples indicating preferred modes for carrying out the disclosed invention are included for illustrative purposes and are not intended to limit the scope of the claims.

[0051] It will also be apparent to those skilled in the art that various modifications may be made in the practice of the disclosed invention based on the aspects described herein without departing from the spirit and scope of the invention disclosed herein.

[0052] As previously noted, the disclosed and claimed invention relates to ruthenium pyrazolate precursors of formula I:

[0053] [ka] In the formula, R 1、 R2, R3, and R4 are each independently a substituted or unsubstituted C1 to C 20 Linear, branched or cyclic alkyl, and substituted or unsubstituted C1-C 20and n is 2 or 3. In another aspect of this embodiment, R1, R2, R3, and R4 are each independently one of —CH3, —CH2CH3, CH2CH2CH3, CH(CH3)2, —CH2CH(CH3)2, and —C(CH3)3. The Ru-Pz precursor is a member of the class of compounds represented by Formula I. In another aspect of this embodiment, one or more of R1, R2, R3, and R4 are each independently one of CF3, —CF2CF3, —CF2CF2CF3, —CF(CF3)2, —C(CF3)3, and any substituted or unsubstituted C1-C8 perfluoroalkyl. In another aspect of this embodiment, at least one of R1, R2, R3, and R4 is a substituted or unsubstituted C1-C8 perfluoroalkyl. In another aspect of this embodiment, R1 and R4 are each the same group. In another aspect of this embodiment, R2 and R3 are each the same group. In another aspect of this embodiment, R1, R2, R3, and R4 are each the same group. In one aspect of this embodiment, n is 2. In one aspect of this embodiment, n is 3.

[0054] In one aspect, the disclosed and claimed invention relates to ruthenium pyrazolate precursors of Formula I (herein “Ru-Pz1”) having the following structure, and derivatives thereof, for use in ALD or ALD-like processes:

[0055] [ka] In yet another aspect of this embodiment, the ALD or ALD-like process is applied to grow films on substrates including one or more oxide substrates or surfaces, such as Al2O3, ZrO2, HfO2, and SiO2; non-oxide substrates, such as WCN, WN, and TiN; or metal surfaces, such as Cu, Co, Mo, or W. In yet another aspect of this embodiment, the ALD or ALD-like process is performed at a temperature less than approximately 300°C. In yet another aspect of this embodiment, the ALD or ALD-like process is performed at a temperature less than approximately 275°C. In yet another aspect of this embodiment, the ALD or ALD-like process is performed at a temperature less than approximately 250°C. In yet another aspect of this embodiment, the ALD or ALD-like process is performed at a temperature ranging from approximately 200°C to approximately 300°C. In yet another aspect of this embodiment, the ALD or ALD-like process is performed at a temperature ranging from approximately 235°C to approximately 300°C.

[0056] In another aspect, the disclosed and claimed invention relates to ruthenium pyrazolate precursors of Formula I (herein “Ru-Pz2”) having the following structure, and derivatives thereof, for use in ALD or ALD-like processes:

[0057] [ka] In yet another aspect of this embodiment, the ALD or ALD-like process is applied to grow films on substrates including one or more oxide substrates or surfaces, such as Al2O3, ZrO2, HfO2, and SiO2; non-oxide substrates, such as WCN, WN, and TiN; or metal surfaces, such as Cu, Co, Mo, or W. In yet another aspect of this embodiment, the ALD or ALD-like process is performed at a temperature less than approximately 300°C. In yet another aspect of this embodiment, the ALD or ALD-like process is performed at a temperature less than approximately 275°C. In yet another aspect of this embodiment, the ALD or ALD-like process is performed at a temperature less than approximately 250°C. In yet another aspect of this embodiment, the ALD or ALD-like process is performed at a temperature ranging from approximately 200°C to approximately 300°C. In yet another aspect of this embodiment, the ALD or ALD-like process is performed at a temperature ranging from approximately 235°C to approximately 300°C.

[0058] In another aspect, the disclosed and claimed invention relates to ruthenium pyrazolate precursors of Formula I (herein "Ru-Pz3") having the following structure, and derivatives thereof, for use in ALD or ALD-like processes:

[0059] [ka] In yet another aspect of this embodiment, the ALD or ALD-like process is applied to grow films on substrates including one or more oxide substrates or surfaces, such as Al2O3, ZrO2, HfO2, and SiO2; non-oxide substrates, such as WCN, WN, and TiN; or metal surfaces, such as Cu, Co, Mo, or W. In yet another aspect of this embodiment, the ALD or ALD-like process is performed at a temperature less than approximately 300°C. In yet another aspect of this embodiment, the ALD or ALD-like process is performed at a temperature less than approximately 275°C. In yet another aspect of this embodiment, the ALD or ALD-like process is performed at a temperature less than approximately 250°C. In yet another aspect of this embodiment, the ALD or ALD-like process is performed at a temperature ranging from approximately 200°C to approximately 300°C. In yet another aspect of this embodiment, the ALD or ALD-like process is performed at a temperature ranging from approximately 235°C to approximately 300°C.

[0060] In another aspect, the disclosed and claimed invention relates to ruthenium pyrazolate precursors of Formula I (herein “Ru-Pz4”) having the following structure, and derivatives thereof, for use in ALD or ALD-like processes:

[0061] [ka] In yet another aspect of this embodiment, the ALD or ALD-like process is applied to grow films on substrates including one or more oxide substrates or surfaces, such as Al2O3, ZrO2, HfO2, and SiO2; non-oxide substrates, such as WCN, WN, and TiN; or metal surfaces, such as Cu, Co, Mo, or W. In yet another aspect of this embodiment, the ALD process is performed at a temperature less than approximately 300°C. In yet another aspect of this embodiment, the ALD or ALD-like process is performed at a temperature less than approximately 275°C. In yet another aspect of this embodiment, the ALD or ALD-like process is performed at a temperature less than approximately 250°C. In yet another aspect of this embodiment, the ALD or ALD-like process is performed at a temperature ranging from approximately 200°C to approximately 300°C. In yet another aspect of this embodiment, the ALD or ALD-like process is performed at a temperature ranging from approximately 235°C to approximately 300°C.

[0062] In another aspect, the disclosed and claimed invention relates to ruthenium pyrazolate precursors of Formula I (herein "Ru-Pz5") having the following structure, and derivatives thereof, for use in ALD or ALD-like processes:

[0063] [ka] In yet another aspect of this embodiment, the ALD method is applied to grow films on substrates including one or more oxide substrates or surfaces, such as Al2O3, ZrO2, HfO2, and SiO2; non-oxide substrates, such as WCN, WN, and TiN; or metal surfaces, such as Cu, Co, Mo, or W. In yet another aspect of this embodiment, the ALD or ALD-like method is performed at a temperature less than approximately 300°C. In yet another aspect of this embodiment, the ALD or ALD-like method is performed at a temperature less than approximately 275°C. In yet another aspect of this embodiment, the ALD or ALD-like method is performed at a temperature less than approximately 250°C. In yet another aspect of this embodiment, the ALD or ALD-like method is performed at a temperature ranging from approximately 200°C to approximately 300°C. In yet another aspect of this embodiment, the ALD or ALD-like method is performed at a temperature ranging from approximately 235°C to approximately 300°C.

[0064] Examples of ALD or ALD-like growth conditions for precursors having Formula I, including Ru-Pz1, Ru-Pz2, Ru-Pz3, Ru-Pz4, and Ru-Pz5, include, but are not limited to, the following: a. Substrate temperature: 200-300°C and the range therebetween; b. Evaporator temperature (metal precursor temperature): 100-130℃; c. Reactor pressure: 0.01 to 20 Torr and the range therebetween; d. Precursor: Pulse time: 1-15 seconds; Purge time: 1-20 seconds; e. Reactive gas (co-reactant): pulse time 1-60 seconds; purge time 1-90 seconds; wherein the pulse peak pressure of the reactive gas can be substantially higher than the steady-state reactor pressure (e.g., 700 Torr); g. Pulse sequence (metal complex / purge / reactive gas / purge): pulse and purge times vary depending on chamber size; and h. Number of cycles: Varies depending on desired film thickness.

[0065] In one embodiment, the ALD or ALD-like process is carried out at a temperature of approximately 245° C. and uses co-reactants under the following reaction parameters: a. Pressure: approximately 10 Torr; b. Precursor: Pulse time: approximately 10 seconds; Purge time: approximately 15 seconds; and c. H2 co-reactant: pulse time approximately 40 seconds; purge time approximately 60 seconds.

[0066] In yet another aspect of this embodiment, the co-reactant is H2.

[0067] In one embodiment of the ALD or ALD-like process, an ALD or ALD-like process using precursors having Formula I is applied to grow films on substrates including one or more of Al2O3, ZrO2, HfO2, and SiO2, non-oxides such as WCN, WN, and TiN, or metal surfaces such as Cu, Co, Mo, or W, and combinations thereof. In yet another aspect of this embodiment, the disclosed and claimed precursors of Formula I, including Ru-Pz1, Ru-Pz2, Ru-Pz3, Ru-Pz4, and Ru-Pz5, are (i) solid at room temperature, (ii) thermally stable, (iii) have sufficient vapor pressure to allow evaporation under standard operating temperatures and pressures, and / or (iv) can be efficiently and easily utilized to deposit oxygen-free Ru films (as deposited) with a resistivity of only approximately 20 μΩ-cm at approximately 225-295°C using a hydrogen co-reactant.

[0068] In one embodiment, the disclosed and claimed invention relates to the use of precursors having Formula I, including Ru-Pz1, Ru-Pz2, Ru-Pz3, Ru-Pz4, and Ru-Pz5, wherein the ALD or ALD-like process is carried out at a pressure between about 0.01 and about 20 Torr. In yet another aspect of this embodiment, the ALD or ALD-like process is carried out at a pressure between about 1 Torr and about 15 Torr. In yet another aspect of this embodiment, the ALD or ALD-like process is carried out at a pressure between about 5 Torr and about 15 Torr. In yet another aspect of this embodiment, the ALD or ALD-like process is carried out at a pressure between about 5 Torr and about 10 Torr. In yet another aspect of this embodiment, the ALD or ALD-like process is carried out at a pressure of about 5 Torr. In yet another aspect of this embodiment, the ALD or ALD-like process is carried out at a pressure of about 10 Torr. In yet another aspect of this embodiment, the ALD or ALD-like process is carried out at a pressure of about 15 Torr. In yet another aspect of this embodiment, the ALD or ALD-like process is carried out at a pressure of approximately 20 Torr. In yet another aspect of this embodiment, the ALD or ALD-like process is carried out at any one of the pressures or pressure ranges described above with at least one oxygen-free co-reactant. In yet another aspect of this embodiment, the ALD or ALD-like process is carried out at any one of the pressures or pressure ranges described above with an H gas co-reactant. In yet another aspect of this embodiment, the ALD or ALD-like process is carried out at any one of the pressures or pressure ranges described above with at least one oxygen-containing co-reactant. In yet another aspect of this embodiment, the ALD or ALD-like process is carried out at any one of the pressures or pressure ranges described above with an O gas co-reactant.

[0069] In another aspect, the disclosed and claimed invention relates to the use of precursors having Formula I, including Ru-Pz1, Ru-Pz2, Ru-Pz3, Ru-Pz4, and Ru-Pz5, where the ALD or ALD-like process includes the use of at least one oxygen-free co-reactant. In one aspect of this aspect, the oxygen-free co-reactant includes hydrogen. In one aspect of this aspect, the oxygen-free co-reactant includes a nitrogen-containing co-reactant. In one aspect of this aspect, the oxygen-free co-reactant includes a nitrogen-containing co-reactant that is one or more of ammonia, hydrazine, alkylhydrazine, and alkylamine. In one aspect of this aspect, the oxygen-free co-reactant includes ammonia. In one aspect of this aspect, the oxygen-free co-reactant includes hydrazine. In one aspect of this aspect, the oxygen-free co-reactant includes an alkylhydrazine. In one aspect of this aspect, the oxygen-free co-reactant includes an alkylamine.

[0070] In another embodiment, the disclosed and claimed invention relates to the use of precursors having Formula I, including Ru-Pz1, Ru-Pz2, Ru-Pz3, Ru-Pz4, and Ru-Pz5, where the ALD or ALD-like process includes the use of at least one oxygen-containing co-reactant. In one aspect of this embodiment, the oxygen-containing co-reactant is a reaction gas including one or more of oxygen (e.g., ozone, elemental oxygen, molecular oxygen / O), hydrogen peroxide, and nitrous oxide. In one embodiment, O2 is the preferred co-reactant gas. In one embodiment, ozone is the preferred co-reactant gas.

[0071] In another aspect, the disclosed and claimed invention relates to the use of precursors having Formula I, including Ru-Pz1, Ru-Pz2, Ru-Pz3, Ru-Pz4, and Ru-Pz5, wherein the ALD or ALD-like process comprises a precursor pulse time of from about 1 second to about 15 seconds. In yet another aspect of this embodiment, the precursor pulse time is from about 1 second to about 10 seconds. In yet another aspect of this embodiment, the precursor pulse time is from about 5 seconds to about 10 seconds. In yet another aspect of this embodiment, the precursor pulse time is about 5 seconds. In yet another aspect of this embodiment, the precursor pulse time is about 10 seconds. In yet another aspect of this embodiment, the precursor pulse time is about 15 seconds.

[0072] In another aspect, the disclosed and claimed invention relates to the use of precursors having Formula I, including Ru-Pz1, Ru-Pz2, Ru-Pz3, Ru-Pz4, and Ru-Pz5, wherein the ALD or ALD-like process includes a precursor purge time of from about 1 second to about 20 seconds. In yet another aspect of this embodiment, the precursor purge time is from about 1 second to about 15 seconds. In yet another aspect of this embodiment, the precursor purge time is from about 5 seconds to about 15 seconds. In yet another aspect of this embodiment, the precursor purge time is from about 10 seconds to about 15 seconds. In yet another aspect of this embodiment, the precursor purge time is about 10 seconds. In yet another aspect of this embodiment, the precursor purge time is about 15 seconds.

[0073] In another aspect, the disclosed and claimed invention relates to the use of precursors having Formula I, including Ru-Pz1, Ru-Pz2, Ru-Pz3, Ru-Pz4, and Ru-Pz5, wherein the ALD or ALD-like process comprises a co-reactant pulse time of from about 1 second to about 60 seconds. In yet another aspect of this embodiment, the co-reactant pulse time is from about 10 seconds to about 50 seconds. In yet another aspect of this embodiment, the co-reactant pulse time is from about 20 seconds to about 40 seconds. In yet another aspect of this embodiment, the co-reactant pulse time is from about 30 seconds to about 40 seconds. In yet another aspect of this embodiment, the co-reactant pulse time is from about 10 seconds. In yet another aspect of this embodiment, the co-reactant pulse time is from about 20 seconds to about 30 seconds. In yet another aspect of this embodiment, the co-reactant pulse time is from about 40 seconds. In yet another aspect of this embodiment, the co-reactant pulse time is approximately 50 seconds. In yet another aspect of this embodiment, the co-reactant pulse time is approximately 60 seconds. In yet another aspect of this embodiment, the ALD or ALD-like process is carried out at any one of the pressures or pressure ranges described above in conjunction with an H gas co-reactant. In yet another aspect of this embodiment, the ALD or ALD-like process is carried out at any one of the pressures or pressure ranges described above in conjunction with at least one oxygen-containing co-reactant. In yet another aspect of this embodiment, the ALD or ALD-like process is carried out at any one of the pressures or pressure ranges described above in conjunction with an O gas co-reactant.

[0074] In another aspect, the disclosed and claimed invention relates to the use of precursors having Formula I, including Ru-Pz1, Ru-Pz2, Ru-Pz3, Ru-Pz4, and Ru-Pz5, wherein the ALD or ALD-like process includes a co-reactant purge time of from about 1 second to about 90 seconds. In yet another aspect of this embodiment, the co-reactant purge time is from about 10 seconds to about 80 seconds. In yet another aspect of this embodiment, the co-reactant purge time is from about 20 seconds to about 70 seconds. In yet another aspect of this embodiment, the co-reactant purge time is from about 30 seconds to about 60 seconds. In yet another aspect of this embodiment, the co-reactant purge time is from about 40 seconds to about 50 seconds. In yet another aspect of this embodiment, the co-reactant purge time is from about 10 seconds. In yet another aspect of this embodiment, the co-reactant purge time is from about 20 seconds. In yet another aspect of this embodiment, the co-reactant purge time is approximately 30 seconds. In yet another aspect of this embodiment, the co-reactant purge time is approximately 40 seconds. In yet another aspect of this embodiment, the co-reactant purge time is approximately 50 seconds. In yet another aspect of this embodiment, the co-reactant purge time is approximately 60 seconds. In yet another aspect of this embodiment, the co-reactant purge time is approximately 70 seconds. In yet another aspect of this embodiment, the co-reactant purge time is approximately 80 seconds. In yet another aspect of this embodiment, the co-reactant purge time is approximately 90 seconds. In yet another aspect of this embodiment, the ALD or ALD-like process is carried out at any one of the aforementioned pressures or pressure ranges using an H gas co-reactant. In yet another aspect of this embodiment, the ALD or ALD-like process is carried out at any one of the aforementioned pressures or pressure ranges using at least one oxygen-containing co-reactant. In yet another aspect of this embodiment, the ALD or ALD-like process is carried out at any one of the aforementioned pressures or pressure ranges in conjunction with an O2 gas co-reactant.

[0075] In another aspect, the disclosed and claimed invention relates to the use of precursors having Formula I, including Ru-Pz1, Ru-Pz2, Ru-Pz3, Ru-Pz4, and Ru-Pz5, in ALD or ALD-like processes involving substrates comprising one or more of Al2O3, ZrO2, HfO2, and SiO2, non-oxides such as WCN, WN, and TiN, or metal surfaces such as Cu, Co, Mo, or W.

[0076] In another embodiment, the disclosed and claimed invention relates to films grown from precursors having Formula I, including Ru-Pz1, Ru-Pz2, Ru-Pz3, Ru-Pz4, and Ru-Pz5. In yet another aspect of this embodiment, films are grown on substrates including one or more of Al2O3, ZrO2, HfO2, and SiO2, non-oxides such as WCN, WN, and TiN, or metallic surfaces such as Cu, Co, Mo, or W.

[0077] TGA / DSC TGA / DSC analysis of the Ru-Pz1 precursor was performed at 100 °C (as measured by TC on the ampoule) using N2 carrier gas. As shown in Figure 1, TGA / DSC analysis of the Ru-Pz1, Ru-Pz2, or Ru-Pz3 precursor demonstrates that the precursors vaporize at moderate temperatures and leave no residue upon evaporation (i.e., no evidence of decomposition). In addition, the DSC data indicate that the Ru-Pz1 precursor has a melting point of approximately 147 °C.

[0078] Saturation behavior As shown in Figure 2, the Ru deposition rate increased with the Ru-Pz1 vapor pressure. The vapor pressure was varied by changing the bubbler temperature between 104 and 129 °C. One ALD cycle consisted of a 10-second Ru-Pz1 pulse and a 15-second argon purge, followed by a 40-second H2 pulse and a 60-second argon purge. The deposition pressure was 10 Torr, and the deposition temperature was 245 °C. A resistivity of approximately 20 μmΩ·cm was achieved on SiO2, but was higher at a higher Ru-Pz1 vapor pressure of 1.5 Torr or a bubbler temperature of 129 °C.

[0079] Effect of deposition pressure The Ru deposition rate increases with deposition pressure, and the resistivity can also be affected by the deposition pressure, as shown in Figure 3. The deposition temperature was 245 °C.

[0080] Process window on SiO2 Conductive Ru films grown from the Ru-Pz1 precursor were deposited between approximately 200 °C and approximately 295 °C. One deposition method included (i) a 0.5-second Ru-Pz1 precursor pulse and a variable-length purge, followed by (ii) three consecutive 0.02-second H pulses (separated by 5 seconds) and a purge at deposition pressures below 1 Torr. The Ru growth rate per cycle was 0.3–0.4 Å per cycle. As shown in Figure 4A, Ru films grown from the Ru-Pz1 precursor had a resistivity of only 20 μmΩ.cm (as-deposited) when deposited between approximately 245 °C and approximately 295 °C.

[0081] Other deposition methods using a higher deposition pressure of 10 Torr and a longer 40-second H pulse with a 60-second purge, and a 5-second pulse of Ru-Pz1 with a 15-second purge, further extended the process window to about 200°C, and increased the growth rate to approximately 1 Å per cycle, as shown in Figure 4B.

[0082] Uniformity on Ru film As shown in Figure 5, Ru films grown from the Ru-Pz1 precursor exhibit a very high degree of uniformity. In Figure 5, the Ru-Pz1 precursor was deposited at 255°C, 265°C, and 275°C on an 8-inch reactor using a 0.02 second purge between the Ru-Pz1 precursor pulse and the H2 pulse. Regardless of the temperature, the deposited films showed consistent uniformity.

[0083] Thickness As shown in Figure 6, Ru films grown from Ru-Pz1 precursor and H2 at 245 °C exhibited linear thickness with cycle number. Figure 7 shows the drop in resistivity as a function of film thickness, down to approximately 20 μΩ.cm at a Ru thickness of approximately 80 Å.

[0084] Purge Length The purge length can have an effect on film growth when using the Ru-Pz1 precursor. As shown in Figure 8, film growth using the Ru-Pz1 precursor at 255 °C with a longer purge time does not negatively affect the Ru-Pz process. On the other hand, a longer purge time at 275 °C results in less growth and higher resistance. This phenomenon may enable the deposition of conformal Ru films at 255 °C using the Ru-Pz1 precursor.

[0085] XPS thick film As shown in Figure 9, XPS analysis of a 37 nm thick Ru film grown at 275 °C from the Ru-Pz1 precursor on native SiO showed Ru = 93%; Si = 4% and O = 3% (N and F were undetectable).

[0086] XPS thin film As shown in Figure 10, XPS analysis of thin films grown from the Ru-Pz1 precursor on Al2O3 indicates that there is a fluorine-containing layer between the ruthenium and aluminum oxide layers when Ru is deposited at 275 °C.

[0087] Membrane shape As shown in Figure 11, Ru films grown from the Ru-Pz1 precursor are smoother on TiN liners compared to oxides, and Ru films are smoother on SiO2 compared to Al2O3. Films grown at 275 °C (200 cycles) on various substrates exhibit different degrees of roughness: (i) on Al2O3, the Ru films are approximately 8 nm thick and have an RMS of 0.85 nm (average of three measurements), which corresponds to 10.6% of the film thickness; (ii) on SiO2, the Ru films are approximately 9 nm thick and have an RMS of 0.57 nm (average of three measurements), which corresponds to 6.3% of the film thickness; and (iii) on TiN, the Ru films are approximately 8 nm thick and have an RMS of 0.46 nm (average of three measurements), which corresponds to 5.7% of the film thickness.

[0088] Conformity Figure 10 shows the initial conformality of a Ru film (400 cycles of alternating Ru-Pz and H2 at 275°C) grown from a Ru-Pz1 precursor on a via (20:1 aspect ratio); the magnification of Figure 12 is 35,000. As shown in Figure 10, ruthenium was deposited in a deep via with a width of 90 nm and a depth of 1800 nm, filling the via from the top to the bottom.

[0089] Figure 13 shows higher magnification photomicrographs (150,000 magnification) of the top and bottom of the via shown in Figure 12 and shows that the Ru in the film produced in Figure 12 was 18-21 nm thick at the top of the via and 12-13 nm thick at the bottom of the via, with approximately 60% conformality. Conformity was further improved to over 95% at a lower deposition temperature of 245°C.

[0090] Cross-flow deposition (without H2) Figure 14 shows the deposition of Ru films grown on SiO2 from the Ru-Pz1 precursor in the absence of H2 (275 °C) in a cross-flow reactor. In particular, Figure 14 shows the growth of approximately 1-2 nm thick Ru films deposited by 400 cycles of the Ru-Pz1 precursor in the absence of hydrogen at 275 °C. Compared to 16 nm of Ru using hydrogen for 400 equivalent cycles at 275 °C, the amount of ruthenium deposited at 275 °C in the absence of hydrogen represents approximately 10% of the amount that would have been deposited using hydrogen using a comparable process due to thermal decomposition. This result indicates that the Ru-Pz1 precursor is sufficiently thermally stable at 275 °C, and that the Ru deposition method described here using H2 at or below 275 °C is primarily an ALD method, rather than a thermal CVD method.

[0091] XPS (without H2) As shown in Table 1 below, in the absence of hydrogen, no significant Ru deposition occurs on any substrate between 255 and 275°C. XPS data show a small amount of fluorine on the surface due to thermal decomposition of Ru-Pz1, demonstrating that the Ru-Pz1 precursor can transfer fluorine atoms to the substrate (at least on SiO2 substrates). While the transfer and presence of fluorine may be beneficial in some applications, the precursor and / or method may be further adjusted to reduce, minimize, or eliminate the presence of fluorine in the presence of hydrogen.

[0092] [Table 1]

[0093] RBS analysis of thick films As shown in Figure 15, the RBS data indicate that only Ru and Si elements can be quantified above the detection limit at 2.024 MeV. In Figure 15, the filled symbols are the collected data, and the solid lines are the fits to the RBS spectra using SIMNRA software.

[0094] In Figure 16, the RBS data show that at 3.043 MeV, only Ru and Si elements can be quantified above the detection limit. In Figure 14, the filled symbols are the collected data, and the solid lines are the fits to the RBS spectrum using SIMNRA software.

[0095] As shown in Figure 17, the RBS data indicate that at 4.282 MeV, only Ru and Si elements can be quantified above the detection limit. In Figure 17, the filled symbols are the collected data, and the solid lines are the fits to the RBS spectra using SIMNRA software. The small signal visible in the simulation with 0% carbon content is due to the "C" present on the surface due to contamination from the ambient air. 0.5 H 0.5 " is caused by the 22 single layers of the

[0096] In Figure 18, RBS data show that no carbon is detectable in Ru films grown from Ru-Pz precursors with H2 (at 275 °C) in a cross-flow reactor. The plot shows experimental data (circles) and simulations of the data showing ruthenium films with 0% carbon content (red line), 3% carbon content (black line), 5% carbon content (green line), and 10% carbon content (blue line). Given the noise in the data, it can be said that the carbon content is below the 5% detection limit. The small signal visible in the simulation with 0% carbon content is due to carbon ions present on the surface due to contamination from the ambient air. 0.5 H 0.5 " is caused by the 22 single layers of the

[0097] As shown in Figure 19, RBS data indicate that oxygen is not detectable in Ru films grown from the Ru-Pz1 precursor with H2 (275 °C) in a cross-flow reactor. The plot shows experimental data (circles) and simulations of the data showing ruthenium films with 3% oxygen content (green line), 6% oxygen content (black line), and 10% oxygen content (red line). Given the noise in the data, it can be said that the oxygen content is below the detection limit of 6%.

[0098] Figure 20 infers from the RBS analysis and shows that the Ru film grown from the Ru-Pz1 precursor has a single layer of Ru on Si, with no "C" due to surface contamination from the ambient air. 0.5 H 0.5 These results are summarized in Table 2 below. The single layer is 10 15 at. / cm 2 is equivalent to

[0099] [Table 2]

[0100] FIG. 21 shows the XRD pattern of Ru films deposited on Si at 245° C., indicating the formation of crystalline Ru.

[0101] [Effects of the invention] The Ru-Pz1 precursor can be effectively used to grow Ru films that exhibit many desirable qualities, including, but not limited to: (i) effective use with H2 from 200°C to over 300°C; (ii) good uniformity in an 8-inch cross-flow reactor; (iii) consistent as-deposited film resistivity of only 20 μΩcm at thicknesses greater than 8 nm; (iv) low carbon and oxygen contamination (as measured by XPS) with no fluorine in the film; and (v) good conformality demonstrated in 20:1 aspect ratio vias at 245-275°C.

[0102] Although the present invention has been described and illustrated with a certain degree of detail, it will be understood that this disclosure is made by way of example only, and that numerous variations in the conditions and order of the steps can be employed by those skilled in the art without departing from the spirit and scope of the invention. While this application is directed to the invention set forth in the claims, the disclosure of this application also includes: 1. Formula I: [ka] [In the formula, R 1、 R 2 、R 3 and R 4 are each independently a substituted or unsubstituted C 1 ~C 20 Linear, branched or cyclic alkyl, and substituted or unsubstituted C 1 ~C 20 selected from the group consisting of linear, branched or cyclic alkyl halides; n is 2 or 3] and preferably substantially free of water, metal ions or metals, and organic impurities. 2. R 1、 R 2 、R 3 and R 4 are each independently -CH 3 , -CH 2 CH 3 , -CH 2 CH 2 CH 3 , -CH(CH3) 2 , -CH 2 CH(CH 3 ) 2 , -C(CH 3 ) 3 , -CF 3 , -CF 2 CF 3 , -CF 2 CF 2 CF 3 , -CF(CF 3 ) 2 , -C(CF 3 ) 3 The precursor according to 1. above, which is one of the above. 3. R 1 、R 2 、R 3 and R 4 At least one of the C 1 ~C 8 The precursor according to 1 above, which is a perfluoroalkyl. 4. The precursor according to 1 above, wherein n is 2. 5. The precursor according to 1 above, wherein n is 3. 6. R 1 、R 2 、R 3 and R 4 and each represent the same group. 7. R 1 and R 4 , or R 2 and R 3 and each represent the same group. 8. The precursor described in 1 above, having the following structure:

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Claims

1. 1. An ALD or ALD-like method for depositing a ruthenium-containing layer on a substrate, comprising: (i) exposing a surface of the substrate to a precursor, the precursor having Formula I: 【Chemistry 1】 [In the formula, R １、 R ２ , R ３ and R ４ are each independently a substituted or unsubstituted C １ ~C ２０ Linear or branched alkyl, and substituted or unsubstituted C １ ~C ２０ selected from the group of linear or branched alkyl halides; n is 2 or 3. wherein the precursor is a ruthenium-containing ALD or ALD-like precursor substantially free of water, metal ions or metals, and organic impurities; (ii) thereafter exposing the surface of the substrate to one or more co-reactants; In a method comprising: carried out at a temperature in the range of from 200°C to less than 275°C, or in the range of from 200°C to less than 250°C, or in the range of from 225°C to 295°C; and / or The surface is Al ２ O ３ , ZrO ２ , HfO ２ , SiO ２ , WN, WCN, TiN, Cu, Co, Mo, W, and combinations thereof; and / or performed using a precursor pulse time of approximately 1 second to approximately 15 seconds; and / or performed using a precursor purge time of approximately 1 second to approximately 20 seconds; and / or performed using a co-reactant pulse time of approximately 1 second to approximately 60 seconds; and / or conducted using a co-reactant purge time of approximately 1 second to approximately 90 seconds; and / or the ruthenium-containing layer has an as-deposited resistivity of less than about 40 μOhm cm at a Ru thickness of 80 Å; However, the terms "approximately" and "about" refer to the stated value of a variable, and to all values ​​of the variable within ±10% of the stated value. The method.

2. R in Formula I １、 R ２ , R ３ and R ４ are each independently —CH ３ , -CH ２ CH ３ , -CH ２ CH ２ CH ３ , -CH(CH ３ ) ２ , -CH ２ CH (CH ３ ) ２ , -C(CH ３ ) ３ , -CF ３ , -CF ２ CF ３ , -CF ２ CF ２ CF ３ , -CF(CF ３ ) ２ , -C(CF ３ ) ３ The method of claim 1, wherein the method is one of:

3. 3. The method of claim 1 or 2, wherein the precursor has the following structure: 【Chemistry 2】 【Transformation 3】 【Chemistry 4】 【Transformation 5】 and / or 【Transformation 6】

4. 3. The method of claim 1 or 2, wherein the precursor has the following structure: 【Transformation 7】

5. The method of any one of claims 1 to 4, wherein the one or more co-reactants comprise an oxygen-free co-reactant.

6. The method of any one of claims 1 to 4, wherein the one or more co-reactants comprise an oxygen-containing co-reactant.

7. The one or more co-reactants are H ２ The method according to any one of claims 1 to 4, comprising:

8. The one or more co-reactants may be ozone, elemental oxygen, molecular oxygen / O ２ 5. The method of claim 1, further comprising one or more of hydrogen peroxide and nitrous oxide.

9. 9. The method of any one of claims 1 to 8, conducted at a pressure between approximately 1 Torr and approximately 15 Torr, where "approximately" refers to the stated value of the variable as well as all values ​​of the variable within ±10% of the stated value.

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