Metal film deposition equipment

Abstract

To provide a deposition apparatus of a metallic film that can appropriately wash the deposition apparatus when washing the inside of the deposition apparatus by circulating rinse water in the deposition apparatus.SOLUTION: A deposition apparatus 1 comprises a control device 60 for controlling switching using a switching mechanism 30 and the drive of a pump 81. The control device 60 includes: switching a circulation route 32 of a first rinse water C1 from a circulation route 31 of a plating solution L using the switching mechanism 30; circulating the first rinse water C1 in the circulation route 32 of the first rinse water C1 by driving the pump 81; and stopping the drive of the pump 81 when the amount of change over time of electric conductivity of the rinse water C1 becomes a predetermined amount or less.SELECTED DRAWING: Figure 3

Description

[Technical Field]

[0001] The present invention relates to a film forming apparatus that forms a metal film on a substrate by electrolytic plating while applying the hydraulic pressure of a plating solution to the substrate via an electrolyte membrane. [Background technology]

[0002] Conventionally, film formation devices have been proposed that deposit metal on the surface of a substrate to form a metal film (for example, Patent Document 1). The film formation device disclosed in Patent Document 1 includes a container that contains a plating solution. The container has an opening that is sealed with an electrolyte membrane. With this film formation device, a metal film can be formed on the substrate by electroplating by applying an electric field between the anode and the substrate while applying the hydraulic pressure of the plating solution to the substrate via the electrolyte membrane. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2016-125089 Summary of the Invention [Problem to be solved by the invention]

[0004] In the film formation apparatus shown in Patent Document 1, when metal films are repeatedly formed while circulating a plating solution through a container, the metal ions (cations) are consumed, and the concentration of anions in the plating solution may increase. In particular, if the anions become concentrated and adhere to the inside of the film formation apparatus, the concentration of the plating solution may change. Therefore, it is possible to circulate cleaning water and clean the inside of the film formation apparatus with the cleaning water. However, it is difficult to determine when cleaning with the cleaning water should be stopped.

[0005] The present invention has been made in consideration of such problems, and its purpose is to provide a metal film deposition apparatus that can properly clean the deposition apparatus when cleaning water is circulated through the deposition apparatus to clean the inside of the deposition apparatus. [Means for solving the problem]

[0006] In view of the above problems, the present invention provides a metal film forming apparatus that forms a metal film on a substrate by electrolytic plating while applying a liquid pressure of a plating solution to the substrate via an electrolyte membrane, the film forming apparatus including: a container in which the plating solution is sealed with the electrolyte membrane while the plating solution is contained; a plating solution tank that contains the plating solution to be supplied to the container; a cleaning water tank that contains cleaning water to be supplied to the container; a switching mechanism that switches between a circulation path for the plating solution between the container and the plating solution tank and a circulation path for cleaning water between the container and the cleaning water tank; and a pump for circulating plating solution or cleaning water in the circulation path switched by the switching mechanism, a conductivity meter for measuring the conductivity of the cleaning water stored in the cleaning water tank, and a control device for controlling the switching by the switching mechanism and the driving of the pump, and when cleaning the film forming apparatus, the control device causes the switching mechanism to switch from the plating solution circulation path to the cleaning water circulation path and drives the pump to circulate the cleaning water in the cleaning water circulation path, and stops driving the pump when the amount of change in the conductivity of the cleaning water over time becomes equal to or less than a preset amount. [Effects of the Invention]

[0007] According to the present invention, when cleaning the film formation apparatus, the control device controls the switching mechanism to switch from the plating solution circulation path to the cleaning water circulation path. Next, the control device drives the pump to circulate the cleaning water through the cleaning water circulation path. When the change in the conductivity of the cleaning water over time becomes equal to or less than a predetermined amount, it can be determined that the plating solution components present in the film formation apparatus have been removed by the cleaning water. Therefore, under these conditions, the control device can stop driving the pump and complete the cleaning with the cleaning water. As a result, when cleaning water is circulated through the film formation apparatus to clean the inside of the film formation apparatus, the film formation apparatus can be properly cleaned. [Brief explanation of the drawings]

[0008] [Figure 1] FIG. 1A is a schematic cross-sectional view showing an example of a metal film forming apparatus according to an embodiment of the present invention, and FIG. 1B is a diagram for explaining a method of forming a metal film using the metal film forming apparatus shown in FIG. [Figure 2] (a) is a diagram for explaining a method of replacing plating solution with air using the film formation apparatus shown in Figure 1(a), (b) is a diagram for explaining cleaning with first cleaning water using the film formation apparatus shown in Figure 1(a), and (c) is a diagram for explaining cleaning with second cleaning water using the film formation apparatus shown in Figure 1(a). [Figure 3] 1(a) is a flow diagram of a film forming method and a cleaning method using the film forming apparatus shown in FIG. DETAILED DESCRIPTION OF THE INVENTION

[0009] 1. About the deposition equipment 1 As shown in FIG. 1(a), the film formation apparatus 1 is a film formation apparatus that forms a metal film F on a substrate B by electrolytic plating. Specifically, as shown in FIG. 1(b), the film formation apparatus 1 forms the metal film F in a state in which an electrolyte membrane 13 is pressed against the surface of the substrate B by the hydraulic pressure of a plating solution L. The film formation apparatus 1 includes an anode 11, an electrolyte membrane 13, and a power source 14 that applies a voltage between the anode 11 and the substrate B.

[0010] The film forming apparatus 1 further includes a container 15, a mounting table 40, and a linear actuator 70. For ease of explanation, this embodiment is based on the premise that the electrolyte membrane 13 is disposed below the anode 11, and the substrate B is disposed further below that. However, the positional relationship is not limited to this as long as the metal film F can be formed on the surface of the substrate B.

[0011] Substrate B functions as a cathode. The material of substrate B is not particularly limited as long as it functions as a cathode (i.e., a surface having electrical conductivity). Substrate B may be made of a metal material such as aluminum or copper. When forming a wiring pattern from a metal coating F, substrate B is a substrate in which a base layer of copper or the like is formed on the surface of an insulating substrate such as a resin. In this case, after forming the metal coating F, the base layer other than the portion on which the metal coating F is formed is removed by etching or the like. This allows a wiring pattern made of metal coating F to be formed on the surface of the insulating substrate.

[0012] The anode 11 is, for example, a non-porous anode made of the same metal as the metal of the metal coating. The anode 11 has a block or flat plate shape. However, the anode 11 may also be porous, mesh, or a cage containing balls. Examples of materials for the anode 11 include copper. The anode 11 dissolves when a voltage is applied from the power source 14. However, when forming a film using only metal ions of the plating solution L, the anode 11 is an anode that is insoluble in the plating solution L. The anode 11 is electrically connected to the positive electrode of the power source 14. The negative electrode of the power source 14 is electrically connected to the substrate B via the mounting table 40.

[0013] The plating solution L is a solution containing the metal of the metal coating to be formed in an ionic state. Examples of such metals include copper, nickel, gold, and silver. The plating solution L is a solution in which these metals are dissolved (ionized) in an acid such as nitric acid, phosphoric acid, succinic acid, sulfuric acid, sulfamic acid, or pyrophosphoric acid. Examples of the solvent for the solution include water and alcohol. For example, when the metal is copper, the plating solution L can be an aqueous solution containing copper sulfate, copper pyrophosphate, or the like.

[0014] The electrolyte membrane 13 is a membrane that can be impregnated (contained) with metal ions along with the plating solution L by contacting it with the plating solution L. The electrolyte membrane 13 is a flexible membrane. The material of the electrolyte membrane 13 is not particularly limited as long as it allows the metal ions of the plating solution L to migrate to the substrate B side when a voltage is applied from the power source 14. Examples of materials for the electrolyte membrane 13 include resins with ion exchange properties, such as fluororesins such as Nafion (registered trademark) manufactured by DuPont. The thickness of the electrolyte membrane is preferably in the range of 5 μm to 200 μm. More preferably, the thickness is in the range of 20 μm to 60 μm.

[0015] The container 15 is made of a material that is insoluble in the plating solution L. The container 15 has a container space 15a that contains the plating solution. The anode 11 is disposed in the container space 15a of the container 15. An opening 15d is formed on the side of the container space 15a facing the substrate B. The opening 15d of the container 15 is covered with an electrolyte membrane 13. Specifically, the periphery of the electrolyte membrane 13 is sandwiched between the container 15 and the frame 17. This allows the plating solution L in the container space 15a to be sealed by the electrolyte membrane 13 when the plating solution L is contained therein.

[0016] The container 15 includes a supply port 15b that supplies the plating solution L to the container space 15a. The container 15 further includes a discharge port 15c that discharges the plating solution L from the container space 15a. The supply port 15b and the discharge port 15c are holes that communicate with the container space 15a. The supply port 15b and the discharge port 15c are arranged on either side of the container space 15a. The supply port 15b is connected to a liquid supply pipe 50. The discharge port 15c is fluidly connected to a liquid discharge pipe 53.

[0017] The film forming apparatus 1 further includes a plating solution tank 91, a solution supply pipe 50, a solution discharge pipe 53, a pump 81, and first and second cleaning water tanks 92 and 93. As shown in Fig. 1 , the plating solution tank 91 contains a plating solution L to be supplied to the inside of the housing body 15. The first and second cleaning water tanks 92 and 93 contain first and second cleaning water C1 and C2 to be supplied to the inside of the housing body 15, respectively.

[0018] The first and second cleaning water tanks 92, 93 are provided with conductivity meters 51, 52, respectively, that measure the conductivity of the first and second cleaning water C1, C2 contained in the first and second cleaning water tanks 92, 93. The conductivities measured by the conductivity meters 51, 52 are input to the control device 60, which will be described later.

[0019] The conductivity meters 51 and 52 measure the electrical conductivity of a liquid by utilizing the fact that the electrical conductivity of the liquid increases as the amount of ions in the liquid increases. Measurement principles include, for example, the AC two-electrode method, which measures the current flowing between electrodes sandwiching the liquid, and the electromagnetic induction method, which measures the induced current generated in two coiled tubes sandwiching the liquid. The conductivity meters 51 and 52 can measure the amount of anions derived from the plating solution L. Examples of such instruments include the portable electrical conductivity set D-210C-S manufactured by Horiba, Ltd. and the Sensingeye 732 electrical conductivity meter 7732 series manufactured by Techno Morioka Corporation. In this embodiment, the above-mentioned liquids correspond to the first and second cleaning waters C1 and C2.

[0020] The film forming apparatus 1 has a circulation path 31 for the plating solution L (see FIG. 1(b)), a circulation path 32 for the first cleaning water C1 (see FIG. 2(b)), and a circulation path 33 for the second cleaning water C2 (see FIG. 2(c)). The circulation path 31 for the plating solution L is a path for circulating the plating solution L between the container 15 and the plating solution tank 91. The circulation path 32 for the first cleaning water C1 is a path for circulating the first cleaning water C1 between the container 15 and the first cleaning water tank 92. The circulation path 33 for the second cleaning water C2 is a path for circulating the second cleaning water C2 between the container 15 and the second cleaning water tank 93.

[0021] The film forming apparatus 1 includes a switching mechanism 30 that switches to one of a circulation path 31 for the plating solution L, a circulation path 32 for the first cleaning water C1, and a circulation path 33 for the second cleaning water C2. In this embodiment, the switching mechanism 30 is composed of six on-off valves, from a first on-off valve 31A to a sixth on-off valve 33B, and the opening and closing of these on-off valves is controlled by a control device 60, which will be described later.

[0022] The first on-off valve 31A and the second on-off valve 31B are respectively provided upstream and downstream of the plating solution tank 91. The third on-off valve 32A and the fourth on-off valve 32B are respectively provided upstream and downstream of the first cleaning water tank 92. The fifth on-off valve 33A and the sixth on-off valve 33B are respectively provided upstream and downstream of the second cleaning water tank 93.

[0023] The liquid supply pipe 50 is connected to the supply port 15b of the accommodation body 15, and the pump 81 supplies the selected plating solution L, first cleaning water C1, or second cleaning water C2 to the accommodation body 15 by switching the switching mechanism 30. The liquid discharge pipe 53 is connected to the discharge port 15c of the accommodation body 15, and the pressure adjustment valve 54 adjusts the pressure (liquid pressure) of the plating solution L, first cleaning water C1, and second cleaning water C2 in the accommodation space 15a to a predetermined pressure.

[0024] In this embodiment, for example, when the switching mechanism 30 selects the circulation path 31 for the plating solution L, the pump 81 is driven to draw the plating solution L from the plating solution tank 91 into the solution supply pipe 50, as shown in FIG. 1(b). The drawn plating solution L is pumped from the supply port 15b to the accommodation space 15a. The plating solution L in the accommodation space 15a is returned to the plating solution tank 91 via the discharge port 15c. In this manner, the plating solution L circulates within the film forming apparatus 1. Similarly, by switching the switching mechanism 30, the first and second cleaning waters C1 and C2 circulate within the film forming apparatus 1, as shown in FIGS. 2(b) and 2(c). By continuing to drive the pump 81, the liquid pressures of the plating solution L, the first cleaning water C1, and the second cleaning water C2 in the accommodation space 15a can be maintained at predetermined pressures by the pressure regulating valve 54.

[0025] The mounting table 40 is made of, for example, a conductive material (such as a metal). A recess 41 is formed in the mounting table 40. The recess 41 is a recess for accommodating the substrate B.

[0026] Furthermore, the film forming apparatus 1 includes a replacement mechanism 82 that replaces the plating solution L, the first cleaning water C1, or the second cleaning water C2 contained in the container 15 with air G. In this embodiment, the replacement mechanism 82 includes an air pump 82a. As shown in FIG. 2(a), by driving the air pump 82a, compressed air (atmospheric air) G is sent to the container space 15a, and the plating solution L, the first cleaning water C1, or the second cleaning water C2 contained in the container space 15a is replaced with air G.

[0027] The film forming apparatus 1 is equipped with a control device 60 that controls switching by the switching mechanism 30, drives the pump 81 and the air pump 82a, and drives the linear actuator 70. The control device 60 is equipped with, as hardware, a storage device (not shown) that stores a program for performing the controls described below, and a computing device (not shown) that executes this program. The control device 60 is equipped with, as software, a program that executes the following content. Specifically, the control of the control device 60 will be described with reference to the control flow shown in FIG. 3. In this embodiment, the control device 60 controls the cleaning operation using the first and second cleaning waters C1 and C2, but, for example, the control device 60 may also control the deposition of a metal film F described below.

[0028] First, in step S101, the control device 60 controls a transfer device (not shown) for the substrate B to transfer the substrate B to the mounting table 40. If a metal film F has been formed on the substrate B, the substrate B is replaced. Next, in step S102, the control device 60 drives the linear actuator 70 to lower the accommodation body 15 until the electrolyte membrane 13 attached to the accommodation body 15 comes into contact with the substrate B. In this state, the first on-off valve 31A and the second on-off valve 31B constituting the switching mechanism 30 are open, and the other valves are closed.

[0029] Next, in step S103, the control device 60 drives the pump 81. This supplies the plating solution L to the accommodation space 15a of the accommodation body 15. Since the pressure adjustment valve 54 is provided in the liquid discharge pipe 53, the liquid pressure of the plating solution L in the accommodation space 15a is maintained at a predetermined pressure. As a result, as shown in FIG. 1(b), the liquid pressure of the plating solution L can press the electrolyte membrane 13 against the substrate B.

[0030] Next, in step S104, the pressed state by the electrolyte membrane 13 is maintained, and a metal coating F is formed. Specifically, a voltage is applied between the anode 11 and the substrate B. As a result, metal ions contained inside the electrolyte membrane 13 migrate to the surface of the substrate B, where they are reduced, forming the metal coating F. When manufacturing wiring using the metal coating F, it is sufficient to etch the conductive base layer formed on the surface of the insulating substrate B.

[0031] Next, in step S105, after the metal film F is formed, the control device 60 causes the replacing mechanism 82 to replace the plating solution L with air G while the electrolyte membrane 13 is in contact with the substrate B. Specifically, the control device 60 stops the operation of the pump 81 and drives the air pump 82a to replace the plating solution L in the accommodation space 15a of the accommodation body 15 with air (atmosphere) G (see FIG. 2(a)). The control device 60 drives the air pump 82a to send compressed air G to the accommodation space 15a. Additionally, the control device 60 may open a valve (not shown) of a drain pipe (not shown) that communicates between the accommodation space 15a and the atmosphere.

[0032] Next, in step S106, the control device 60 counts the number of times films have been formed on multiple substrates B since the previous change of cleaning water, and determines whether the number of times is equal to or greater than a predetermined number. If the number of times is not equal to or greater than the predetermined number (NO), the control device 60 returns to step S101 and replaces the substrate B. When replacing the substrate B, the control device 60 drives the linear actuator 70 to raise the accommodation body 15. If the number of times is equal to or greater than the predetermined number (YES), the process proceeds to step S107. From step S107 onwards, the control device 60 cleans the film forming apparatus 1 with the first or second cleaning water C1, C2.

[0033] In step S107, when cleaning the film forming apparatus 1, the control device 60 causes the switching mechanism 30 to switch from the circulation path 31 for the plating solution L to one of the circulation paths 32, 33 for the first or second cleaning water C1, C2. In the present embodiment, as an example, the control device 60 causes the switching mechanism 30 to switch to the circulation path 32 for the first cleaning water C1. Specifically, the control device 60 opens the third on-off valve 32A and the fourth on-off valve 32B and closes the other valves.

[0034] Next, in step S108, the control device 60 drives the pump 81 to circulate the first cleaning water C1 through the circulation path 32 for the first cleaning water C1 for a certain time (see FIG. 2(b)). Here, the certain time in step S108 is, for example, the time it takes for the first cleaning water C1 contained in the first cleaning water tank 92 to circulate once (i.e., the time for one pass of the first cleaning water C1). This time can be calculated by dividing the total amount of first cleaning water C1 contained in the first cleaning water tank 92 by the discharge flow rate of the pump 81. In step S109, the control device 60 causes the conductivity measuring device 51 to measure the conductivity of the first cleaning water C1. Proceeding to step S110, after a certain time has elapsed since step S109 (e.g., 10 seconds), the control device 60 causes the conductivity measuring device 51 to remeasure the conductivity of the first cleaning water C1.

[0035] In step S111, it is determined whether the conductivity of the first cleaning water C1 obtained in step S110 is equal to or greater than a predetermined value. This predetermined value is a reference conductivity for performing a liquid change of the first cleaning water C1 contained in the first cleaning water tank 92, and is, for example, a conductivity at which the cleaning effect of the first cleaning water C1 is reduced due to anions contained in the plating solution L. This predetermined value can be determined experimentally; for example, when the plating solution L is an aqueous copper sulfate solution, the predetermined value of the conductivity is 5000 μS / cm, which is a threshold value that can be set appropriately depending on the composition of the plating solution L, etc.

[0036] If the conductivity of the first cleaning water C1 is equal to or greater than the predetermined value (YES in step S111), the process proceeds to step S112, where the control device 60 controls the switching mechanism 30 to switch to the circulation path 33 for the second cleaning water C2, which is the other cleaning water (see FIG. 2(c)). Specifically, the control device 60 opens the fifth on-off valve 33A and the sixth on-off valve 33B and closes the other valves. Since the pump 81 is driven, the second cleaning water C2 is circulated through the circulation path 33 for the second cleaning water C2 for a certain period of time (see FIG. 2(c)). Thereafter, in step S113, the first cleaning water C1 (one of the cleaning waters) contained in the first cleaning water tank 92 is replaced with new cleaning water, and the process returns to step S109. In this manner, the film forming apparatus 1 can be continuously cleaned by switching between the circulation path 32 for the first cleaning water C1 and the circulation path 33 for the second cleaning water C2.

[0037] If the conductivity of the first cleaning water C1 is not equal to or greater than the predetermined value in step S111 (NO), the process proceeds to step S114. Here, the difference between the conductivity of the first cleaning water C1 measured in step S109 and step S110 is calculated. This difference is the amount of change in the conductivity of the first cleaning water C1 over time. If the amount of change in this conductivity is equal to or less than the predetermined amount (YES), it is determined that the components of the plating solution L present in the film forming apparatus 1 have been removed by the first cleaning water C1, and the process proceeds to step S115, where the control device 60 stops driving the pump 81. This ends the circulation of the first cleaning water C1 through the circulation path 32 for the first cleaning water C1.

[0038] On the other hand, if the change in conductivity is not equal to or less than the predetermined amount (NO), it is determined that the cleaning with the first cleaning water C1 is insufficient, and the process returns to step S109 to continue cleaning of the film forming apparatus 1. The predetermined value of the change in conductivity is a value at which cleaning by the film forming apparatus 1 is considered to be complete, and can be determined experimentally, and its magnitude is, for example, 10 μS / cm.

[0039] When the plating solution L is an aqueous solution of copper sulfate or the like, the plating solution components, such as copper sulfate, tend to locally aggregate, causing local corrosion of the stainless steel and titanium components that make up the film-forming apparatus 1. However, by washing with the first and second cleaning waters C1 and C2, this corrosion can be prevented. Furthermore, if the plating solution L is replaced with air in step S105, this phenomenon becomes more pronounced, and the components of the plating solution L, such as copper sulfate, tend to crystallize, potentially causing malfunctions of the film-forming apparatus 1, clogging of piping, and deterioration of the sealing properties of O-rings and the like. However, in this embodiment, by washing with the first and second cleaning waters C1 and C2, these problems can be prevented. As a result, the life of the film-forming apparatus 1 can be extended.

[0040] As an example, using the film-forming apparatus 1 shown in Figure 1, metal films were formed multiple times using a copper sulfate aqueous solution as the plating solution, and then the film-forming apparatus 1 was cleaned with first cleaning water C1 according to the flow shown in Figure 3. As a result, there was no deposition of copper sulfate in the cleaning water, compared to when cleaning with cleaning water similar to that of the example was not performed. Furthermore, there was no corrosion of the stainless steel (SUS316) that constitutes the film-forming apparatus 1.

[0041] Furthermore, as a comparative example, after forming a metal film with the same number of film formation times, the timing of changing the first cleaning water C1 in step S111 was judged based on the color of the first cleaning water C1. As a result, in the example, the frequency of changing the first cleaning water C1 in step S113 was less than in the comparative example, and the proportion of the amount of first cleaning water discharged was about one-third. This shows that the amount of first cleaning water C1 discharged can be reduced by managing the first cleaning water C1 based on its conductivity.

[0042] Although the embodiments of the present invention have been described in detail above, the present invention is not limited to the above-described embodiments, and various design modifications can be made without departing from the spirit of the present invention as set forth in the claims.

[0043] In this embodiment, the film forming apparatus is cleaned using the first cleaning water and the second cleaning water, but the film forming apparatus may be cleaned using only one of the cleaning waters, for example. [Explanation of symbols]

[0044] 1: film forming device, 13: electrolyte membrane, 15: container, 30: switching mechanism, 31: plating solution circulation path, 32: first cleaning water circulation path, 33: second cleaning water circulation path, 51, 52: conductivity measuring device, 60: control device, 82: replacement mechanism, 91: plating solution tank, 92: first cleaning water tank, 93: second cleaning water tank, B: substrate, L: plating solution, C1: first cleaning water, C2: second cleaning water

Claims

1. A film forming apparatus for forming a metal film on a substrate by electrolytic plating while applying hydraulic pressure of a plating solution to the substrate via an electrolyte membrane, The film forming apparatus includes: a container in which a plating solution is contained and sealed by the electrolyte membrane; a plating solution tank that contains a plating solution to be supplied to the inside of the container; a flush water tank that stores flush water to be supplied to the inside of the container; a switching mechanism for switching between a circulation path for the plating solution between the container and the plating solution tank and a circulation path for the cleaning water between the container and the cleaning water tank; a pump that circulates the plating solution or the cleaning water in the circulation path switched by the switching mechanism; a conductivity meter for measuring the conductivity of the cleaning water contained in the cleaning water tank; a control device that controls the switching by the switching mechanism and the driving of the pump, When cleaning the film forming apparatus, the control device causing the switching mechanism to switch from the circulation path of the plating solution to the circulation path of the cleaning water; By driving the pump, cleaning water is circulated through the cleaning water circulation path, The metal film forming device stops driving the pump when the amount of change in the conductivity of the cleaning water over time becomes equal to or less than a preset amount.

2. the flush water tank comprises a first flush water tank containing first flush water as the flush water, and a second flush water tank containing second flush water as the flush water, The first flush water tank and the second flush water tank are each provided with the conductivity measuring device, the switching mechanism further switches between a circulation path for first flush water between the container and the first flush water tank and a circulation path for second flush water between the container and the second flush water tank, The control device By driving the pump, one of the first cleaning water and the second cleaning water is circulated through a circulation path for the one of the first cleaning water and the second cleaning water; 2. The metal coating deposition apparatus of claim 1, wherein when the conductivity of one of the cleaning waters becomes equal to or greater than a predetermined value, the switching mechanism switches the circulation path from the circulation path of one of the cleaning waters to the circulation path of the other cleaning water.

3. The film forming apparatus includes: a replacement mechanism for replacing the plating solution contained in the container with air; The control device After the metal film is formed, the plating solution is replaced with air by the replacing mechanism while the electrolyte membrane is in contact with the substrate; After replacing the plating solution with the air, the switching mechanism is caused to switch the circulation path of the cleaning water; The metal coating deposition apparatus according to claim 1 , wherein the cleaning water is circulated through the cleaning water circulation path by driving the pump.

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