Maintenance method for processing device and processing device

Abstract

To remove a polishing liquid adhering to an upper surface of a chuck table base easily.SOLUTION: A chuck table 31 is removed from a chuck table base 33 to expose a support surface 330 and the exposed support surface 330 is cleaned by a polishing pad 77 attached to a tip of a spindle 72. Thus, a polishing liquid adhering to the support surface 330 of the chuck table base 33 can be easily removed.SELECTED DRAWING: Figure 5

Description

[Technical Field]

[0001] The present invention relates to a maintenance method for a processing device and the processing device. [Background technology]

[0002] There is a polishing apparatus that polishes the top surface of a wafer held on a chuck table with a polishing pad while supplying slurry to the wafer. In this polishing apparatus, as disclosed in Patent Document 1, the chuck table is mounted on a chuck table base. Therefore, the chuck table has a plurality of through holes formed on its outer periphery, while the chuck table base has a plurality of female screws corresponding to the through holes. The chuck table is then fastened to the chuck table base by threading male screws that pass through the through holes into the female screws. In other words, the chuck table and the chuck table base are fastened to each other only at their outer peripheries. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Publication No. 2018-060957 Summary of the Invention [Problem to be solved by the invention]

[0004] When releasing wafers that are suction-held on the holding surface of the chuck table, fluid is supplied to the holding surface from the chuck table base, causing the fluid to be ejected from the holding surface. However, when fluid is supplied in this manner, a gap may form between the upper surface of the chuck table base and the lower surface of the chuck table, because only the outer peripheries of the chuck table and the chuck table base are fastened together with screws.

[0005] Slurry that is sucked in from the holding surface during polishing can get into this gap. If the polishing apparatus is stopped with slurry in the gap, the slurry that has gotten into the gap can stick to the top surface of the chuck table base.

[0006] If the slurry adheres to the upper surface of the chuck table base in this manner, the holding surface will rise after, for example, replacing the chuck table.

[0007] SUMMARY OF THE INVENTION Therefore, an object of the present invention is to easily remove the polishing liquid (slurry) that has adhered to the upper surface of the chuck table base. [Means for solving the problem]

[0008] The maintenance method for a processing apparatus according to the present invention (this maintenance method) is a maintenance method for a processing apparatus that includes a chuck table that holds a wafer with a holding surface, a chuck table base that supports the chuck table with a support surface, and a processing mechanism that processes the wafer with a processing tool attached to the tip of a spindle while supplying processing liquid to the wafer held on the holding surface, and includes a separating step of separating the chuck table from the support surface of the chuck table base, a cleaning step of cleaning the support surface with a polishing pad attached to the tip of the spindle, and a supporting step of positioning and supporting the chuck table on the support surface.

[0009] In this maintenance method, the polishing pad used in the cleaning step may be a polishing pad used when polishing a wafer.

[0010] The processing apparatus of the present invention (the present processing apparatus) is a processing apparatus comprising a chuck table that holds a wafer with a holding surface, a chuck table base that supports the chuck table with a support surface, a processing mechanism that processes the wafer with a processing tool attached to the tip of a spindle while supplying a processing liquid to the wafer held on the holding surface, and a control unit, wherein a polishing pad is attached to the tip of the spindle, and the control unit controls the contact of the polishing pad with the support surface of the chuck table base on which the chuck table is not attached, and the rotation of the spindle to rotate the polishing pad in contact with the support surface to clean the support surface. [Effects of the Invention]

[0011] In this maintenance method and processing apparatus, the exposed support surface of the chuck table base, where the chuck table is not attached, is cleaned using a polishing pad attached to the tip of the spindle, making it possible to easily remove the polishing liquid that has adhered to the support surface of the chuck table base. [Brief explanation of the drawings]

[0012] [Figure 1] FIG. 1 is a perspective view showing a configuration of a polishing apparatus. [Figure 2] FIG. 2 is a perspective view showing the configuration of a chuck table and a chuck table base. [Figure 3] FIG. [Figure 4] FIG. 2 is a perspective view showing the polishing apparatus with the chuck table removed. [Figure 5] FIG. DETAILED DESCRIPTION OF THE INVENTION

[0013] As shown in FIG. 1, a polishing apparatus 1 according to this embodiment is an apparatus for polishing a wafer 100 as a workpiece, and is an example of a processing apparatus.

[0014] Wafer 100 is, for example, a circular semiconductor wafer, and includes a front surface 101 and a back surface 102. Front surface 101 of wafer 100, which faces downward in FIG. 1, holds multiple devices and is protected by the attachment of protective tape 103. Back surface 102 of wafer 100 is the surface to be polished, on which polishing processing is performed.

[0015] As shown in FIG. 1, the polishing apparatus 1 includes a rectangular parallelepiped base 2, an upwardly extending column 3, and a control unit 7 that controls each component of the polishing apparatus 1.

[0016] An opening 5 is provided on the upper surface side of the base 2. A wafer holding mechanism 30 is disposed within the opening 5. The wafer holding mechanism 30 includes a chuck table 31 that holds the wafer 100 by a holding surface 312, a chuck table base 33 that supports the chuck table 31, a chuck motor 34 that rotates the chuck table 31 and the chuck table base 33, a support member 37 that supports the chuck table 31 and the chuck table base 33, and a plurality of support columns 35 that support the support member 37. 3, a load sensor 36 is provided on each support column 35. Furthermore, a chuck motor 34 rotates the chuck table 31 and the chuck table base 33 about a table rotation axis 301.

[0017] 2, the chuck table 31 has a substantially disk-shaped frame 310, and a holding portion 311 made of a porous material such as porous ceramics is provided in a recess provided in the upper surface of the frame 310. The upper surface of the holding portion 311 serves as a holding surface 312 that suction-holds the wafer 100. In the chuck table 31, the holding portion 311 is connected to a suction source (not shown), so that the wafer 100 can be suction-held by the holding surface 312.

[0018] An annular flange 314 having an outer diameter larger than that of the frame body 310 is fixed to the lower part of the frame body 310. A plurality of through holes 315 for inserting the male screws 300 are formed in the annular flange 314 at predetermined intervals in the circumferential direction.

[0019] The chuck table base 33 is a disk-shaped body configured to support the chuck table 31 by a support surface 330, which is its upper surface. A suction groove 331 and a suction port 332 penetrating the chuck table base 33 are formed in the support surface 330 of the chuck table base 33. The suction groove 331 and the suction port 332 are configured to face the bottom surface 313 of the chuck table 31, which is supported on the support surface 330, and are used to transmit a suction force from a suction source to the holding portion 311 of the chuck table 31. In this embodiment, the suction port 332 is provided in the suction groove 331 and in the center of the support surface 330.

[0020] Furthermore, a plurality of screw holes (female threads) 333 are formed in the support surface 330 of the chuck table base 33 at positions corresponding to the through holes 315 of the chuck table 31. The bottom surface 313 of the chuck table 31 is brought into contact with the support surface 330 of the chuck table base 33, and the screws 300 are inserted into the through holes 315 from above the annular flange 314 and screwed into the screw holes 333 of the chuck table base 33, thereby fixing the chuck table 31 to the chuck table base 33. The bottom surface 313 of the chuck table 31 is brought into close contact with the support surface 330 of the chuck table base 33 by tightening the screws 300 with a predetermined torque pressure.

[0021] 1, a cover plate 39 that moves in the Y-axis direction together with the chuck table 31 is provided around the periphery of the chuck table 31. A bellows cover 12 that expands and contracts in the Y-axis direction is connected to the cover plate 39. A horizontal movement mechanism 40 is provided below the wafer holding mechanism 30.

[0022] The horizontal movement mechanism 40 moves the chuck table 31 and the polishing mechanism 70 relatively in the Y-axis direction, which is a direction parallel to the holding surface 312. In this embodiment, the horizontal movement mechanism 40 is configured to move the wafer holding mechanism 30 including the chuck table 31 in the Y-axis direction relative to the polishing mechanism 70.

[0023] The horizontal movement mechanism 40 includes a pair of Y-axis guide rails 42 parallel to the Y-axis direction, a Y-axis movement table 45 that slides on these Y-axis guide rails 42, a Y-axis ball screw 43 arranged parallel to the Y-axis guide rails 42, a Y-axis motor 44 connected to the Y-axis ball screw 43, a Y-axis encoder 46 for detecting the rotation angle of the Y-axis motor 44, and a holding base 41 that holds these.

[0024] Y-axis moving table 45 is slidably installed on Y-axis guide rail 42 via slide member 451 (see FIG. 3). A nut portion 401 (see FIG. 3) is provided on the underside of Y-axis moving table 45. Y-axis ball screw 43 is threadedly engaged with this nut portion 401. Y-axis motor 44 is connected to one end of Y-axis ball screw 43.

[0025] In the horizontal movement mechanism 40, the Y-axis motor 44 rotates the Y-axis ball screw 43, thereby moving the Y-axis movement table 45 in the Y-axis direction along the Y-axis guide rails 42. Support columns 35 of the wafer holding mechanism 30 are installed on the Y-axis movement table 45. Therefore, as the Y-axis movement table 45 moves in the Y-axis direction, the wafer holding mechanism 30 including the chuck table 31 moves in the Y-axis direction.

[0026] In this embodiment, the chuck table 31 is moved along the Y-axis direction by a horizontal movement mechanism 40 between a wafer placement area on the -Y direction side for placing the wafer 100 on the holding surface 312 and a polishing area on the +Y direction side where the wafer 100 is polished.

[0027] Furthermore, the Y-axis encoder 46 of the horizontal movement mechanism 40 detects the rotation angle of the Y-axis motor 44, thereby being able to recognize the position of the chuck table 31 moved by the horizontal movement mechanism 40 in the Y-axis direction.

[0028] 1, a column 3 is erected on the +Y direction side of the base 2. In front of the column 3, a polishing mechanism 70 for polishing the wafer 100 and a vertical movement mechanism 50 are provided.

[0029] The vertical movement mechanism 50 moves the chuck table 31 and the polishing mechanism 70 relative to each other in the Z-axis direction (polishing feed direction), which is a direction perpendicular to the holding surface 312. In this embodiment, the vertical movement mechanism 50 is configured to move the polishing mechanism 70 in the Z-axis direction relative to the wafer holding mechanism 30 including the chuck table 31.

[0030] Vertical movement mechanism 50 includes a fixed plate 57 fixed to the front of column 3, a pair of Z-axis guide rails 51 fixed to fixed plate 57 and parallel to the Z-axis direction, a Z-axis movement table 53 sliding on Z-axis guide rails 51, a Z-axis ball screw 52 arranged parallel to Z-axis guide rails 51, a Z-axis motor 54 connected to Z-axis ball screw 52, ​​a Z-axis encoder 55 for detecting the rotation angle of Z-axis motor 54, and a holder 56 attached to Z-axis movement table 53. Holder 56 holds a polishing mechanism 70.

[0031] Z-axis moving table 53 is slidably installed on Z-axis guide rail 51 via slide member 531 (see FIG. 3). Z-axis moving table 53 is provided with nut portion 501 (see FIG. 3). Z-axis ball screw 52 is threadedly engaged with nut portion 501. Z-axis motor 54 is connected to one end of Z-axis ball screw 52.

[0032] In the vertical movement mechanism 50, the Z-axis motor 54 rotates the Z-axis ball screw 52, ​​causing the Z-axis movement table 53 to move in the Z-axis direction along the Z-axis guide rail 51. As a result, the holder 56 attached to the Z-axis movement table 53 and the polishing mechanism 70 held by the holder 56 move in the Z-axis direction together with the Z-axis movement table 53.

[0033] Furthermore, the Z-axis encoder 55 of the vertical movement mechanism 50 detects the rotation angle of the Z-axis motor 54, thereby recognizing the height of the polishing mechanism 70 moved by the vertical movement mechanism 50 (for example, the height of the polishing pad 77).

[0034] As shown in FIG. 1, the grinding mechanism 70 includes a spindle housing 71 fixed to the holder 56, a spindle 72 rotatably held in the spindle housing 71, a spindle motor 73 that drives the spindle 72 to rotate, a mount 74 attached to the lower end of the spindle 72, and a grinding wheel 75 supported by the mount 74.

[0035] The spindle housing 71 is held by the holder 56. The spindle 72 is supported by the spindle housing 71 so as to be rotatable about a spindle rotation axis 701 (see FIG. 3) parallel to the Z-axis direction.

[0036] As shown in FIG. 1, the spindle motor 73 is connected to the upper end side of the spindle 72 and rotates the spindle 72 around a spindle rotation axis 701 .

[0037] The mount 74 is formed in a disk shape and is fixed to the lower end (tip) of the spindle 72. The mount 74 supports the grinding wheel 75.

[0038] The grinding wheel 75 is formed so that its outer diameter is approximately the same as the outer diameter of the mount 74. The grinding wheel 75 includes a wheel base 76 connected to the lower surface of the mount 74. In addition, the outer diameter of the polishing wheel 75 is preferably larger than the outer diameter of the wafer 100 .

[0039] A polishing pad 77 is provided on the underside of the wheel base 76. The polishing pad 77 is an example of a processing tool attached to the tip of the spindle 72. The polishing pad 77 is made of, for example, a nonwoven fabric such as felt. The underside of the polishing pad 77 serves as a polishing surface for polishing the backside 102 of the wafer 100.

[0040] The polishing pad 77 is provided on the wheel base 76 so that the spindle rotation axis 701 passes through its center. Therefore, the polishing pad 77 is rotated by the spindle motor 73 via the spindle 72, mount 74, and wheel base 76 around the spindle rotation axis 701 (see FIG. 3) that passes through the center of the polishing pad 77, and polishes the wafer 100 held on the chuck table 31 arranged in the polishing region. That is, the polishing pad 77 having an outer diameter larger than that of the wafer 100 has a portion of the lower surface (polishing surface) of the polishing pad 77 that protrudes from the wafer 100 .

[0041] The polishing mechanism 70 is also connected to a polishing liquid supply unit 80 that supplies a polishing liquid to the polishing pad 77. The polishing liquid supply unit 80 has a supply port 81 provided in the polishing mechanism 70 and a valve 82 connected to the supply port 81. The valve 82 is in communication with a polishing liquid supply source 201 and a water source 202.

[0042] During polishing with polishing pad 77, polishing liquid supply unit 80 generates a polishing liquid of an appropriate concentration using the polishing liquid (slurry) and water supplied from polishing liquid supply source 201 and water source 202, and supplies the polishing liquid to a polishing liquid supply path (not shown) in spindle 72 via supply port 81. This allows the polishing liquid to be supplied between back surface 102, which is the surface to be polished of wafer 100, and the underside of polishing pad 77. The polishing liquid supply unit 80 may be a polishing liquid nozzle that sprays the polishing liquid onto the outer surface of the polishing pad 77 . The polishing liquid nozzle may also spray the polishing liquid onto the portion of the lower surface of the polishing pad 77 that protrudes from the wafer 100 .

[0043] In this way, the polishing mechanism 70 is an example of a processing mechanism that processes the wafer 100 using a polishing pad 77 as a processing tool attached to the tip of the spindle 72 while supplying a polishing liquid, which is a processing fluid, to the wafer 100 held on the holding surface 312 of the chuck table 31.

[0044] 1, a thickness measuring device 90 is disposed above the polishing mechanism 70. The thickness measuring device 90 measures the thickness of the wafer 100 during polishing in a non-contact manner. For example, the thickness measuring device 90 projects measurement light onto the wafer 100 through the polishing liquid supply path in the spindle 72 and openings provided in the center of the mount 74, wheel base 76, and polishing pad 77, and receives two reflected beams of light reflected by the upper and lower surfaces of the wafer 100. The thickness measuring device 90 measures the thickness of the wafer 100 based on the optical path difference between the two reflected beams.

[0045] 1, the polishing apparatus 1 further includes a dresser unit 15 on the cover plate 39. The dresser unit 15 includes a dress plate 16 on its upper surface, and is used to dress the polishing pad 77 of the polishing mechanism 70.

[0046] 1 includes a CPU that performs arithmetic processing according to a control program, a storage medium such as a memory, etc. The control unit 7 controls, for example, the above-mentioned components of the polishing apparatus 1 to perform polishing of the wafer 100 and maintenance of the polishing apparatus 1.

[0047] The operation of the polishing process by the polishing device 1 under the control of the control unit 7 will be described below.

[0048] [Holding process] In the polishing process, first, under the control of the control unit 7, the wafer 100 is held by the holding surface 312 of the chuck table 31 in the wafer placement area so that the back surface 102 faces upward.

[0049] [Polishing process] Next, the control unit 7 controls the horizontal movement mechanism 40 to move the wafer holding mechanism 30 including the chuck table 31 to the polishing region below the polishing mechanism 70, as shown by arrow 602 in FIG. 3. Then, the control unit 7 controls the chuck motor 34 of the wafer holding mechanism 30 to rotate the chuck table base 33 and the chuck table 31. Furthermore, the control unit 7 controls the spindle motor 73 of the polishing mechanism 70 to rotate the spindle 72, thereby rotating the polishing pad 77.

[0050] 3 , the control unit 7 controls the vertical movement mechanism 50 to move the polishing pad 77 in the Z-axis direction relative to the chuck table 31, so that the lower surface of the polishing pad 77 comes into contact with the back surface 102 of the wafer 100 held on the holding surface 312. In this manner, the control unit 7 polishes the back surface 102 of the rotating wafer 100 with the lower surface of the rotating polishing pad 77. At this time, the control unit 7 controls the polishing liquid supply unit 80 to supply the polishing liquid between the back surface 102 of the wafer 100 and the lower surface of the polishing pad 77.

[0051] During polishing, the control unit 7 measures the thickness of the wafer 100 being polished using the thickness measuring device 90 shown in FIG. 1, and continues polishing until the thickness of the wafer 100 reaches a target thickness, for example.

[0052] Next, a maintenance method for the polishing apparatus 1 under the control of the control unit 7 will be described.

[0053] [Separation process] In this step, the worker separates the chuck table 31 from the support surface 330 of the chuck table base 33. That is, the worker removes the screws 300 shown in FIG. 2 from the chuck table 31 and the chuck table base 33 to release the engagement between the chuck table 31 and the chuck table base 33. Then, the worker separates the chuck table 31 from the support surface 330 of the chuck table base 33. As a result, the support surface 330 of the chuck table base 33 is exposed, as shown in FIG. 4.

[0054] [Cleaning process] In this step, under the control of the control unit 7, the support surface 330 of the chuck table base 33 is cleaned by the polishing pad 77 attached to the tip of the spindle 72. In this embodiment, the polishing pad 77 used in the cleaning step is the polishing pad used when polishing the wafer 100.

[0055] Specifically, first, the control unit 7 controls the horizontal movement mechanism 40 to move the wafer holding mechanism 30, including the chuck table base 33, to the polishing region below the polishing mechanism 70, as shown by arrow 602 in FIG. 5. Then, the control unit 7 controls the chuck motor 34 of the wafer holding mechanism 30 to rotate the chuck table base 33. Furthermore, the control unit 7 controls the spindle motor 73 of the polishing mechanism 70 to rotate the spindle 72, thereby rotating the polishing pad 77.

[0056] Next, the control unit 7 controls the vertical movement mechanism 50 to move the polishing pad 77 in the Z-axis direction relative to the chuck table base 33, as shown by arrow 601 in Figure 5, so that the lower surface of the polishing pad 77 comes into contact with the support surface 330 of the chuck table base 33.

[0057] In this way, the control unit 7 polishes the support surface 330 of the rotating chuck table base 33 using the underside of the rotating polishing pad 77. As a result, even if polishing liquid that has entered between the support surface 330 of the chuck table base 33 and the chuck table 31 during polishing processing adheres to the support surface 330, the adhered polishing liquid can be removed by the polishing pad 77.

[0058] In this way, in the cleaning process, the control unit 7 controls the contact of the polishing pad 77 with the support surface 330 of the chuck table base 33 on which the chuck table 31 is not attached, and the rotation of the spindle 72 to rotate the polishing pad 77 in contact with the support surface 330 of the chuck table base 33, thereby cleaning (washing) the support surface 330. The support surface 330 may be cleaned by supplying a polishing liquid to the support surface 330 or the underside of the polishing pad 77 . Furthermore, the support surface 330 may be cleaned by supplying water (ultrapure water) instead of the polishing liquid. Furthermore, after cleaning by supplying the polishing liquid, cleaning by supplying water may be performed.

[0059] Thereafter, the control unit 7 controls the vertical movement mechanism 50 to move the polishing pad 77 away from the chuck table base 33. Then, the control unit 7 controls the chuck motor 34 of the wafer holding mechanism 30 to stop the rotation of the chuck table base 33, and controls the spindle motor 73 of the polishing mechanism 70 to stop the rotation of the spindle 72. Furthermore, the control unit 7 controls the horizontal movement mechanism 40 to move the wafer holding mechanism 30, including the chuck table base 33, to a wafer placement area that is away from below the polishing mechanism 70.

[0060] [Support process] In this step, an operator places the chuck table 31 on the support surface 330 of the chuck table base 33 and supports it. That is, the operator places the bottom surface 313 of the chuck table 31 on the support surface 330 of the chuck table base 33, and inserts the screws 300 shown in FIG. 2 into the through holes 315 from above the annular flange 314 and threads them into the threaded holes 333 of the chuck table base 33. The operator then tightens each screw 300 with a predetermined torque pressure, thereby bringing the bottom surface 313 of the chuck table 31 into close contact with the support surface 330 of the chuck table base 33. In this manner, the chuck table 31 is placed on the support surface 330 of the chuck table base 33 and is supported by this support surface 330.

[0061] The chuck table 31 supported on the support surface 330 of the chuck table base 33 in the supporting step may be the one removed from the chuck table base 33 in the separating step, or may be a different chuck table 31.

[0062] As described above, in the maintenance method performed on the polishing apparatus 1 according to this embodiment, the chuck table 31 is removed from the chuck table base 33 to expose the support surface 330, and the exposed support surface 330 is cleaned with the polishing pad 77 attached to the tip of the spindle 72. Therefore, the polishing liquid adhered to the support surface 330 of the chuck table base 33 can be easily removed.

[0063] In the cleaning step, the control unit 7 may control the polishing liquid supply unit 80 to supply the polishing liquid between the support surface 330 of the chuck table base 33 and the underside of the polishing pad 77. Supplying the polishing liquid in this manner is particularly effective for increasing the cleaning power when the polishing pad 77 does not contain fixed abrasive grains. Furthermore, the control unit 7 may use the dresser unit 15 to dress the polishing pad 77 after the cleaning step.

[0064] Furthermore, in this embodiment, during maintenance of the polishing apparatus 1, the support surface 330 of the chuck table base 33 is cleaned using the polishing pad 77 for polishing the wafer 100. In this regard, during maintenance of the polishing apparatus 1, instead of the polishing pad 77 for polishing the wafer 100, a cleaning polishing pad may be attached to the tip of the spindle 72, and the support surface 330 may be cleaned by this cleaning polishing pad. The cleaning polishing pad may, for example, contain fixed abrasive grains to enhance cleaning power, or may be harder than the polishing pad for polishing. The polishing pad for cleaning may have an outer diameter smaller than the outer diameter of the wafer 100 . Furthermore, the polishing pad for cleaning may have a polygonal outer shape instead of a circular shape. For example, the polishing pad for cleaning may have a rectangular outer shape.

[0065] In addition, in this embodiment, the processing device is a polishing device 1 having a polishing mechanism 70 as a processing mechanism. In this regard, the processing device according to this embodiment is not limited to a polishing device, and may be, for example, a grinding device. This grinding device has, as a processing mechanism, a grinding mechanism including a grinding wheel as a processing tool. In this case, during maintenance of the grinding device, a polishing pad is attached to the spindle of the grinding device instead of the grinding wheel, and the support surface of the chuck table base is cleaned. [Explanation of symbols]

[0066] 1: Polishing device, 2: Base, 3: Column, 5: Opening, 7: Control unit, 12: Bellows cover, 15: dresser unit, 16: dress plate, 30: wafer holding mechanism, 31: chuck table, 33: chuck table base, 34: chuck motor, 35: Support column, 36: Load sensor, 37: Annular member, 39: Cover plate, 40: horizontal movement mechanism, 41: support table, 42: Y-axis guide rail, 43: Y-axis ball screw, 44: Y-axis motor, 45: Y-axis moving table, 46: Y-axis encoder, 50: vertical movement mechanism, 51: Z-axis guide rail, 52: Z-axis ball screw, 53: Z-axis moving table, 54: Z-axis motor, 55: Z-axis encoder, 56: holder, 57: Fixing plate, 70: Polishing mechanism, 71: Spindle housing, 72: Spindle, 73: spindle motor, 74: mount, 75: grinding wheel, 76: wheel base, 77: Polishing pad, 80: Polishing liquid supply unit, 81: Supply port, 82: Valve, 90: Thickness measuring device, 100: wafer, 101: front surface, 102: back surface, 103: protective tape, 201: polishing liquid supply source, 202: water source, 300: screw, 301: table rotation axis, 310: Frame body, 311: Holding part, 312: Holding surface, 313: Bottom surface, 314: annular flange, 315: through hole, 330: support surface, 331: suction groove, 332: Suction port, 333: Screw hole, 401: nut portion, 451: slide member, 501: nut portion, 531: slide member, 701: Spindle rotation axis

Claims

1. A maintenance method for a processing apparatus including a chuck table that holds a wafer by a holding surface, a chuck table base that supports the chuck table by a support surface, and a processing mechanism that processes the wafer by a processing tool attached to a tip of a spindle while supplying a processing liquid to the wafer held on the holding surface, comprising: a separating step of separating the chuck table from the support surface of the chuck table base; a cleaning step of cleaning the support surface with a polishing pad attached to the tip of the spindle; a supporting step of placing and supporting a chuck table on the support surface; Including, Maintenance methods for processing equipment.

2. The polishing pad used in the cleaning step is a polishing pad used when polishing a wafer. A maintenance method for a processing device according to claim 1.

3. A processing apparatus comprising: a chuck table that holds a wafer by a holding surface; a chuck table base that supports the chuck table by a support surface; a processing mechanism that processes the wafer by a processing tool attached to the tip of a spindle while supplying a processing liquid to the wafer held on the holding surface; and a control unit, A polishing pad is attached to the tip of the spindle, the control unit controls bringing the polishing pad into contact with the support surface of the chuck table base on which the chuck table is not attached, and rotating the polishing pad in contact with the support surface by rotating the spindle to clean the support surface. Processing equipment.

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