CMP polishing pad with polishing elements on a support - Patent Application 20070122997

Abstract

To provide a polishing pad useful in chemical mechanical polishing.SOLUTION: The polishing pad can comprise a base pad 10 having a top surface 12 and a surface, and a plurality of polishing elements 20, each having a top surface 14 and a bottom surface 22. Each of the polishing elements is connected to the top surface of the base pad to the polishing element by three or more supports 30. The bottom surface of the polishing element, the top surface of the base pad and the supports define at least one void section 40 and there are openings between the three or more supports.SELECTED DRAWING: Figure 5

Description

[Technical Field]

[0001] FIELD OF THE INVENTION The present invention relates generally to the field of polishing pads for chemical mechanical polishing, and more particularly to a chemical mechanical polishing pad having an abrasive structure useful for chemical mechanical polishing of magnetic, optical, and semiconductor substrates, including front end of line (FEOL) or back end of line (BEOL) processing of memory and logic integrated circuits. [Background technology]

[0002] background In the fabrication of integrated circuits and other electronic devices, multiple layers of conductive, semiconductive, and insulating materials are deposited on or partially or selectively removed from the surface of a semiconductor wafer. Thin layers of conductive, semiconductive, and insulating materials may be deposited using a number of deposition techniques. Common deposition techniques in modern wafer processing include physical vapor deposition (PVD), also known as sputtering, chemical vapor deposition (CVD), plasma-enhanced chemical vapor deposition (PECVD), and electrochemical plating (ECP), among others. Common removal techniques include wet and dry isotropic and anisotropic etching, among others.

[0003] As layers of material are sequentially deposited and removed, the top surface of the wafer becomes uneven. Subsequent semiconductor processing (e.g., photolithography, metallization, etc.) requires that the wafer have a flat surface, so the wafer must be planarized. Planarization is useful for removing undesirable surface topography and surface defects (such as rough surfaces, agglomerated materials, crystal lattice damage, scratches, and contaminant layers or materials). Additionally, in damascene processes, material is deposited to fill recessed areas created by patterned etching, but the filling step can be imprecise, and overfilling the recess is preferable to underfilling it. Therefore, the material outside the recess must be removed.

[0004] Chemical mechanical planarization, or chemical mechanical polishing (CMP), is a common technique used to planarize or polish workpieces such as semiconductor wafers and to remove excess material in damascene processes. In conventional CMP, a wafer carrier, or polishing head, is mounted on a carrier assembly. The polishing head holds the wafer and positions it in contact with the polishing surface of a polishing pad mounted on a table or platen within the CMP apparatus. The carrier assembly provides adjustable pressure between the wafer and the polishing pad. Simultaneously, a slurry or other polishing medium is dispensed onto the polishing pad and drawn into the gap between the wafer and the polishing layer. To accomplish polishing, the polishing pad and wafer typically rotate relative to one another. As the polishing pad rotates beneath the wafer, the wafer traverses a typically annular polishing track, or polishing region, where the wafer's surface directly faces the polishing layer. The wafer surface is polished and planarized by the chemical and mechanical action of the polishing surface and the polishing medium (eg, slurry) on that surface.

[0005] The interactions between the polishing layer, polishing medium, and wafer surface during CMP have been the subject of increasing research, analysis, and advanced numerical modeling in recent years in an effort to optimize polishing pad design. Since the inception of CMP as a semiconductor manufacturing process, much of the development of polishing pads has been experimental in nature, involving the testing of many different porous and non-porous polymeric materials and the mechanical properties of such materials. Some approaches involve providing polishing pads with various protruding structures extending from the pad base. See, for example, U.S. Patent Nos. 6,817,925; 7,226,345; 7,517,277; 9,649,742; U.S. Patent Publication No. 2014 / 0273777; and 6,776,699. Other approaches use lattice structures that can form a generally monolithic structure with voids. See, for example, U.S. Patent Nos. 7,828,634, 7,517,277, or 7,771,251. Chinese Patent Publication No. 110253423A discloses a polishing structure having a recessed portion and a hollow protruding portion, wherein the hollow region can be opened by removing the top surface of the protruding portion during polishing.

[0006] U.S. Patent Application Publication No. 2019 / 0009458 discloses the use of additive manufacturing (i.e., 3D printing) to create a composite, unitary, unitary structure, such as one having (a) a body portion having a surface portion thereon; and (b) at least a first array of features formed on the surface portion. Each of the features includes: (i) a support structure bonded to the surface portion and extending upwardly therefrom; and (ii) an upper segment bonded to the support structure, wherein the upper structure and the support structure together define an internal cavity formed therein. These structures are disclosed to collapse under pressure and then return to their previous configuration. This structure is disclosed as useful for noise and / or vibration isolation and skin-body contact applications. Summary of the Invention

[0007] Disclosed herein is a base pad having an upper surface and a surface, a plurality of discrete abrasive elements each having an upper abrasive surface and a bottom surface, wherein each of the plurality of abrasive elements is attached to the upper surface of the base pad to the abrasive element by three or more supports, wherein the supports are spaced (i.e., separate) from one another in the abrasive element and the base pad, and the bottom surface of the abrasive element, the upper surface of the base pad, and the supports define a compartment including at least one void, and there is an opening between the three or more supports.

[0008] Also disclosed herein is a method including providing a substrate, polishing the substrate using a polishing slurry and a pad, wherein the pad includes a base pad having an upper surface and a surface, and a plurality of discrete polishing elements, each having an upper polishing surface and a bottom surface, wherein each of the plurality of polishing elements is coupled to the upper surface of the base pad by three or more supports, wherein the supports are spaced (i.e., separated) from one another in the polishing elements and the base pad, and the bottom surfaces of the polishing elements, the upper surface of the base pad, and the supports define a compartment including at least one void, wherein the upper polishing surface is brought into contact with the substrate during polishing. [Brief explanation of the drawings]

[0009] [Figure 1] FIG. 2 is a diagram of an example of an abrasive element and support that can be used in the pad of the present invention. [Figure 2] FIG. 2 is a diagram of an example of an abrasive element and support that can be used in the pad of the present invention. [Figure 3] FIG. 2 is a diagram of an example of an abrasive element and support that can be used in the pad of the present invention. [Figure 4] FIG. 2 is a diagram of an example of an abrasive element and support that can be used in the pad of the present invention. [Figure 5] FIG. 1 is a side view showing a base pad having abrasive elements on a support that may be used in the pads of the present invention. [Figure 6]FIG. 1 shows a portion of an example pad having discrete abrasive elements connected to a base pad by a support, in accordance with one embodiment of the present invention. [Figure 7] 1 is a graph showing the effect of the support angle α on the effective compressibility. DETAILED DESCRIPTION OF THE INVENTION

[0010] Detailed Description of the Invention The methods and polishing pads disclosed herein can provide certain advantages. Specifically, the design of the polishing pad can provide a relatively high surface polishing area (also referred to as contact area, since this is the portion of the pad that contacts the surface to be polished), while the voids allow for good management / transport of the polishing fluid typically used. This fluid management feature can help control temperature, for example, to reduce or limit the temperature rise caused by frictional heating during polishing. Lower polishing temperatures can help maintain the mechanical properties of the polishing pad and avoid irreversible heat-induced chemical reactions in the pad or the substrate being polished. Chemical reactions in the pad can increase the likelihood of defect generation during polishing.

[0011] The pads disclosed herein, having a support and voids, can make it possible to have a pad with a polishing portion that can align with the surface of the substrate being polished over the entire length scale of the polishing portion of the pad. In other words, having individual polishing elements on a support can provide compliance so that the polishing portion of the pad (combined polishing elements) is in consistent contact with the surface being polished.

[0012] The pads disclosed herein can also have a lower overall compressibility, which can provide a harder or higher modulus upper polishing surface to be applied to the substrate to be polished, while at the same time improving the pad's conformation to the substrate to be polished. For example, if the support, polishing element, and base pad are made of the same material with a certain bulk modulus, the pad can have an effective modulus (e.g., applied stress / compression distance) that is less than the bulk modulus. For example, the effective compressibility of the pad can be at least 0.1%, at least 1%, at least 10%, at least 20%, or at least 25% of the material's bulk modulus, and up to 100%, 90%, 80%, 70%, 60%, 50%, or 40% of the material's bulk modulus. The effective compressibility of the pad can be measured using a modified version of ASTM D3574, where the specified thickness of 0.49 inches cannot be achieved, so the deflection rate is slowed from the specified 0.5 inches / minute to a rate of 0.04 inches / minute, and the cross-sectional area of ​​compression is reduced from 1 square inch to 0.125 square inches to reduce the effects of sample thickness variation and curl. Additional capacitance sensors can be added to more accurately measure strain at a given stress. The effective modulus when measured according to this method can be at least 0.1, at least 1, at least 5, at least 10, at least 20, at least 40, at least 50, at least 70, or at least 100 megapascals (MPa), up to 5 gigapascals (GPa), or up to 1 GPa, or up to 700 MPa, up to 500 MPa, or up to 300 MPa.

[0013] The separate supports and voids can allow for efficient transfer of fluid between the wafer and the protruding structures, thereby reducing the time to contact between the pad and the substrate to be polished. This can increase the time the polishing surface is in contact with the wafer and / or increase the number of polishing protrusions in contact, either of which can potentially produce higher removal rates (higher asperity contact efficiency and reduced defectivity (reduced individual asperity contact pressure)). The voids can deform during polishing. At least a portion of the voids can remain during polishing.

[0014] The method for polishing a substrate disclosed herein uses a pad having a base pad with a plurality of polishing elements, each polishing element being attached to the upper surface of the base pad by three or more supports, wherein the bottom surfaces of the polishing elements, the upper surface of the base pad, and the supports define a compartment containing at least one void. The method may include the use of a slurry.

[0015] The substrate can be any substrate for which polishing and / or planarization is desired. Examples of such substrates include magnetic, optical, and semiconductor substrates. The method can be part of a substrate or interconnect processing process for integrated circuits. For example, the process can be used to remove undesired surface topography and surface defects (such as rough surfaces, agglomerated materials, crystal lattice damage, scratches, and contaminant layers or materials). Additionally, in damascene processes, material is deposited to fill recessed areas created by one or more of the photolithography, patterned etching, and metallization steps. Some steps can be imprecise—for example, they can overfill the recess. The method disclosed herein can be used to remove material outside the recess. This process can be chemical mechanical planarization or chemical mechanical polishing, both of which can be referred to as CMP. A carrier can hold the substrate to be polished—for example, a semiconductor wafer (with or without layers formed by lithography and metallization)—in contact with the polishing elements of the polishing pad. A slurry or other polishing medium can be dispensed into the gap between the substrate and the polishing pad. The polishing pad and substrate are moved, e.g., rotated, relative to one another. The polishing pad is typically positioned below the substrate to be polished. The polishing pad can be rotated. The substrate to be polished can also be moved on a polishing track, e.g., an annular track. The relative movement brings the polishing pad closer to and into contact with the surface of the substrate.

[0016] For example, the present invention may include providing a chemical mechanical polishing apparatus having a platen or carrier assembly; providing at least one substrate to be polished; providing a chemical mechanical polishing pad as disclosed herein; mounting the chemical mechanical polishing pad on the platen; optionally providing a polishing medium (e.g., a slurry and / or an abrasive-free reactive liquid composition) at the interface between the polishing portion of the chemical mechanical polishing pad and the substrate; and creating dynamic contact between the polishing portion of the polishing pad and the substrate (wherein at least some material is removed from the substrate). The carrier assembly may provide an adjustable pressure between the substrate (e.g., wafer) being polished and the polishing pad. The polishing medium may be dispensed onto the polishing pad and drawn into the gap between the wafer and the polishing layer. The polishing medium may include water, a pH adjuster, and optionally one or more of the following, but not limited to, abrasives, oxidizers, inhibitors, biocides, soluble polymers, and salts. The abrasive grains can be oxides, metals, ceramics, or other suitable hard materials. Typical abrasive grains are colloidal silica, fumed silica, ceria, and alumina. The polishing pad and substrate can rotate relative to each other. As the polishing pad rotates under the substrate, the substrate can sweep a typically circular polishing track, or polishing section, where the wafer surface directly faces the polishing portion of the polishing pad. The wafer surface is polished and planarized by the chemical and mechanical action of the polishing layer and the polishing medium on the surface. Optionally, the polishing surface of the polishing pad can be conditioned using a polishing conditioner before polishing begins. Optionally, in the method of the present invention, the provided chemical mechanical polishing apparatus further includes a light source and a light sensor (preferably a multi-sensor spectrograph); and the provided chemical mechanical polishing pad further includes an endpoint detection window; and the method further includes: transmitting light from the light source through the endpoint detection window and projecting it onto the light sensor, and determining the polishing endpoint by analyzing the light reflected from the surface of the substrate that returns through the endpoint detection window. The substrate may have a metallic or metallized surface, such as one containing copper or tungsten.The substrate can be a magnetic substrate, an optical substrate, or a semiconductor substrate.

[0017] The polishing pads disclosed herein have a pad with a base. The base pad or base layer can be a single layer or can include two or more layers. The top surface of the base pad can define a plane in the x-y Cartesian coordinate system. The base can be provided on a subpad. For example, the base layer can be attached to the subpad via a mechanical fastener or by adhesive. The subpad can be made of any suitable material, including materials useful for base layers. In some embodiments, the base layer can have a thickness of at least 0.5 millimeters (mm), or at least 1 mm. In some embodiments, the base layer can have a thickness of 5 mm or less, 3 mm or less, or 2 mm or less. The base layer can be provided in any shape, but can conveniently have a circular or disc shape with a diameter of at least 10 centimeters (cm), at least 20 cm, at least 30 cm, at least 40 cm, or at least 50 cm, up to 100 cm, up to 90 cm, or up to 80 cm.

[0018] The base pad or base layer may comprise any material known for use as a base layer for a polishing pad. For example, it may include polymers, composites of polymers and other materials, ceramics, glass, metal, stone, or wood. Polymers and polymer composites may be used as the base pad, particularly for the upper layer when there are two or more layers, due to their compatibility with materials that can form the protruding structures. Examples of such composites include polymers filled with carbon or inorganic fillers and fibrous mats, such as glass or carbon fibers, impregnated with polymers. The material of the base pad may have one or more of the following properties: a Young's modulus, as measured, for example, by ASTM D412-16, of at least 2 megapascals (MPa), at least 2.5 MPa, at least 5 MPa, at least 10 MPa, or at least 50 MPa, up to 900 MPa, up to 700 MPa, up to 600 MPa, up to 500 MPa, up to 400 MPa, up to 300 MPa, or up to 200 MPa; a density of at least 0.4 grams per cubic centimeter (g / cm3) or at least 0.5 g / cm3, up to 1.7 g / cm3, up to 1.5 g / cm3, or up to 1.3 g / cm3. The base pad material may have a compressibility according to ASTM D3574 of at least 2 megapascals (MPa), at least 2.5 MPa, at least 5 MPa, at least 10 MPa, or at least 50 MPa, up to 900 MPa, up to 700 MPa, up to 600 MPa, up to 500 MPa, up to 400 MPa, up to 300 MPa, or up to 200 MPa.

[0019] Examples of such polymeric materials that may be used in the base pad include polycarbonate, polysulfone, nylon, epoxy resin, polyether, polyester, polystyrene, acrylic polymer, polymethyl methacrylate, polyvinyl chloride, polyvinyl fluoride, polyethylene, polypropylene, polybutadiene, polyethyleneimine, polyurethane, polyethersulfone, polyamide, polyetherimide, polyketone, epoxy, silicone, copolymers thereof (e.g., polyether-polyester copolymers), and combinations or blends thereof.

[0020] The polymer may be polyurethane. Polyurethane may be used alone or in a matrix of carbon or inorganic fillers and a fibrous mat, e.g., glass or carbon fibers. For purposes of this specification, "polyurethane" refers to products derived from difunctional or polyfunctional isocyanates, such as polyetherureas, polyisocyanurates, polyurethanes, polyureas, polyurethaneureas, copolymers thereof, and mixtures thereof. CMP polishing pads according to this specification may be made by a method including: providing an isocyanate-terminated urethane prepolymer; separately providing a treatment component; and combining the isocyanate-terminated urethane prepolymer and the treatment component to form a combination, which is then reacted to form a product. A base pad or base layer can be formed by grinding a cast polyurethane cake to the desired thickness. Optionally, preheating the cake mold using IR radiation, induction, or direct current when casting the porous polyurethane matrix can reduce product variability. Optionally, either a thermoplastic or thermosetting polymer can be used. The polymer may be a crosslinked thermosetting polymer.

[0021] The pad further includes a plurality of abrasive elements attached to the upper surface of the base pad by three or more supports.

[0022] For example, as shown in FIG. 5 , a polishing element 20 having a top surface 14 and a bottom surface 22 can be coupled to the top surface 12 of the base pad 10 by a support 30. Advantageously, the polishing element 20 has a top surface 20 parallel to the top surface of the base pad. Most advantageously, the polishing element 20 has a bottom surface (not visible) parallel to the top surface of the base pad and the top surface 20. In the side view of FIG. 5 , two supports 30 are shown out of a total of four supports for the polishing element 30. The supports 30 and the top surface 12 of the base pad 10, and the bottom surface 22 of the polishing element 20, define a void section 40. The polishing element can be at a distance of at least 0.05 mm, or at least 0.1 mm, from the top surface 12 of the base pad 10, as measured from the top surface 12 of the base pad 10 to the bottom surface 22 of the polishing element 20. The polishing elements can be less than 3 mm, less than 2.5 mm, less than 2 mm, less than 1.5 mm, less than 1 mm, or less than 0.8 mm, as measured from the top surface 12 of the base pad 10 to the bottom surface 22 of the polishing element 20. In Figure 6, a top view of the polishing is shown, where there are six supports 30 for each polishing element 20, connecting the top surface 12 of the base pad to the polishing element 30.

[0023] The abrasive elements can have a regular or irregular shape. For example, the abrasive elements could have an upper surface 14 that is circular, elliptical, polygonal, parabolic, etc.

[0024] The polishing element has an upper surface 14, which is the initial polishing surface area (i.e., the initial contact area). As it is used, the surface will wear away, exposing the subsequent polishing surface area. The subsequent polishing surface area can be the same as the initial polishing surface area, or it can differ from the initial polishing surface area by less than 25%, less than 20%, less than 15%, less than 10%, or less than 5%. The polishing element can have a constant cross-section throughout its entire height, or the cross-section may vary over the height of the polishing element. The sum of the cross-sections of multiple polishing elements can be substantially constant so as to provide a consistent area of ​​contact as the structure wears away during use. Thus, if one or more of the polishing elements are narrower at the upper surface, the other polishing elements can be wider at the upper surface, leading to a constant total cross-sectional area. The upper surface (or upper polishing surface) of the polishing element is substantially planar. This planar surface promotes increased polishing contact with the wafer substrate. The polishing element can have a thickness and cross-sectional dimensions that are separate from and not limited by the support. By substantially planar, it is meant that there may be texture (microtexture) or voids or openings on the surface, and the periphery of the abrasive element defines a plane, with the top surface either in contact with or below that plane. The top surface may be parallel to the plane defined by the base pad. Advantageously, the top surface 14 has sufficient surface area to allow for the formation of a microtexture using a diamond abrasive disc or other abrasive grains.

[0025] The cross-sectional area of ​​the polishing element in the xy plane (e.g., polishing surface area—initial and / or subsequent) can be in the range of at least 0.05 square millimeters (mm), at least 0.1 mm, or at least 0.2 mm, and can be up to 30 mm, 25 mm, 20 mm, 15 mm, 10 mm, 5 mm, 3 mm, or 2 mm. The longest distance of the polishing element in the xy plane (e.g., the longest distance that fluid will travel across the top surface of the polishing element) can be at least 0.1 millimeters (mm), or at least 0.5 mm. The longest distance of the polishing element in the xy plane (e.g., the longest distance that fluid will travel across the top surface of the protruding structure) can be up to 1000 mm, up to 800 mm, up to 100 mm, up to 50 mm, up to 20 mm, up to 10 mm, up to 5 mm, up to 3 mm, up to 2 mm, or up to 1 mm, up to 0.8 mm.

[0026] The thickness of the abrasive elements can be at least 0.1 mm, at least 0.2 mm, at least 0.5 mm, or at least 1 mm. The thickness of the abrasive elements can be up to 2.5 mm, up to 2 mm, up to 1.5 mm, up to 1 mm, or up to 0.8 mm.

[0027] The abrasive elements may present a solid surface or may have openings 13 as shown in FIG.

[0028] The abrasive element can comprise any material useful as an abrasive material in a polishing pad. The abrasive element can be the same or different from the material used in the base pad. For example, it can comprise a polymer, a composite of a polymer material with another material, ceramic, glass, metal, stone, or wood. Examples of such composites include polymers filled with carbon or inorganic fillers, and fibrous mats, for example, glass or carbon fibers, impregnated with a polymer. The material of the abrasive element has one or more of the following properties: a Young's modulus, measured, for example, by ASTM D412-16, of at least 10 MPa, at least 50 MPa, or at least 100 MPa, up to 10 gigapascals (GPa), up to 5 GPa, or up to 1 GPa, or up to 900 MPa, up to 800 MPa, up to 700 MPa, up to 600 MPa, up to 500 MPa, up to 400 MPa, or up to 300 MPa. a Poisson's ratio of at least 0.05, at least 0.08, or at least 0.1, up to 0.6 or up to 0.5, as measured, for example, by ASTM E132015; a density of at least 0.4 g / cm or at least 0.5 g / cm, up to 1.7 g / cm, up to 1.5 g / cm, or up to 1.3 g / cm. The material of the abrasive element may have a compressibility according to ASTM D3574 in the range of at least 10 MPa, at least 50 MPa, or at least 100 MPa, up to 10 gigapascals (GPa), up to 5 GPa, or up to 1 GPa, or up to 900 MPa, up to 800 MPa, up to 700 MPa, up to 600 MPa, up to 500 MPa, up to 400 MPa, or up to 300 MPa.

[0029] Examples of such polymeric materials that can be used in the polishing element include polycarbonate, polysulfone, nylon, epoxy resins, polyether, polyester, polystyrene, acrylic polymers, polymethyl methacrylate, polyvinyl chloride, polyvinyl fluoride, polyethylene, polypropylene, polybutadiene, polyethyleneimine, polyurethane, polyethersulfone, polyamide, polyetherimide, polyketone, epoxy, silicone, copolymers thereof (e.g., polyether-polyester copolymers), and combinations or blends thereof.

[0030] The polymer may be polyurethane. The polyurethane may be used alone or may be a matrix of carbon or inorganic fillers and a fibrous mat, e.g., glass or carbon fibers. For purposes of this specification, "polyurethane" refers to products derived from difunctional or polyfunctional isocyanates, such as polyetherureas, polyisocyanurates, polyurethanes, polyureas, polyurethaneureas, copolymers thereof, and mixtures thereof. CMP polishing pads according thereto may be made by a process including: providing an isocyanate-terminated urethane prepolymer; separately providing a treatment component; and combining the isocyanate-terminated urethane prepolymer and the treatment component to form a combination, followed by reacting the combination to form a product. Either thermoplastic or thermosetting polymers may be used. The polymer may be a crosslinked thermosetting polymer.

[0031] The abrasive elements are attached to the base pad by three or more supports. The supports are spaced apart from one another so that they contact the abrasive elements without touching one another. The distance between supports in the abrasive elements can be at least 2%, at least 5%, at least 10%, or at least 20% of the longest dimension (in the x and y directions) of the abrasive elements, up to 50%, 40%, or 30%. The distance between supports in the abrasive elements depends on the cross-sectional size of the abrasive elements, but can be at least 0.02 mm, at least 0.05 mm, at least 0.08 mm, at least 0.1 mm, at least 0.2 mm, or at least 0.3 mm, and can be up to 10 mm, 5 mm, 3 mm, 1 mm, 0.8 mm, 0.5 mm, or 0.4 mm. The three or more supports can be attached at or near the periphery of the abrasive elements. Optionally, one or more additional supports can be positioned inward from the periphery of the abrasive elements. For example, the polishing element may have three or four supports extending from the bottom side or edge of the polishing element at or near the edge of the polishing element. The polishing element may also have additional supports located inward from the periphery or edge of the polishing element, such as a central support. The supports may be adhered to the base pad or may be integral with the base pad. The supports may be adhered to the polishing element or may be integral with the polishing element. For example, the polishing element, support, and top layer of the base pad may be integral with each other, such as formed from the same material, with no adhesive interface between the materials.

[0032] The abrasive elements may be directly bonded to the base pad by the support without any intervening layer, in other words, there may be a single layer of support.

[0033] The support can comprise any material useful in a polishing pad. The support can be the same or a different material as that used in the base pad. The support can be the same or a different material as that used in the polishing element. For example, it can comprise a polymer, a composite of a polymer material with another material, ceramic, glass, metal, stone, or wood. Examples of such composites include polymers filled with carbon or inorganic fillers, and fibrous mats, for example, glass or carbon fibers, impregnated with a polymer. The support material can have one or more of the following properties: a Young's modulus, measured, for example, by ASTM D412-16, of at least 10 MPa, at least 50 MPa, or at least 100 MPa, up to 10 gigapascals (GPa), up to 5 GPa, or up to 1 GPa, or up to 900 MPa, up to 800 MPa, up to 700 MPa, up to 600 MPa, up to 500 MPa, up to 400 MPa, or up to 300 MPa. a Poisson's ratio of at least 0.05, at least 0.08, or at least 0.1, up to 0.6 or up to 0.5, as measured, for example, by ASTM E132015; a density of at least 0.4 g / cm or at least 0.5 g / cm, up to 1.7 g / cm, up to 1.5 g / cm, or up to 1.3 g / cm. The support material may have a compressibility according to ASTM D3574 in the range of at least 10 MPa, at least 50 MPa, or at least 100 MPa, up to 10 gigapascals (GPa), up to 5 GPa, or up to 1 GPa, or up to 900 MPa, up to 800 MPa, up to 700 MPa, up to 600 MPa, up to 500 MPa, up to 400 MPa, or up to 300 MPa.

[0034] Examples of such polymeric materials that can be used in the abrasive element include polycarbonate, polysulfone, nylon, epoxy resins, polyether, polyester, polystyrene, acrylic polymers, polymethyl methacrylate, polyvinyl chloride, polyvinyl fluoride, polyethylene, polypropylene, polybutadiene, polyethyleneimine, polyurethane, polyethersulfone, polyamide, polyetherimide, polyketone, epoxy, silicone, copolymers thereof (e.g., polyether-polyester copolymers), and combinations or blends thereof.

[0035] The polymer may be polyurethane. The polyurethane may be used alone or in a matrix of carbon or inorganic fillers and a fibrous mat, e.g., glass or carbon fibers. For purposes of this specification, "polyurethane" refers to products derived from difunctional or polyfunctional isocyanates, such as polyetherureas, polyisocyanurates, polyurethanes, polyureas, polyurethaneureas, copolymers thereof, and mixtures thereof. CMP polishing pads according thereto may be made by a method including: providing an isocyanate-terminated urethane prepolymer; separately providing a treatment component; and combining the isocyanate-terminated urethane prepolymer and the treatment component to form a combination, and then reacting the combination to form a product. Either thermoplastic or thermosetting polymers can be used. The polymer may be a crosslinked thermosetting polymer.

[0036] The supports can have any shape in cross section—e.g., circular, elliptical, rectangular, polygonal, or parametric. They can be solid or have one or more voids—e.g., substantially cylindrical. The supports can be perpendicular to the polishing element, perpendicular to the base pad, or both. The supports can project outward from the periphery of the polishing element and downward toward the base pad. As shown in Figures 1-6, the supports can extend at an angle from or near the periphery of the polishing element to the surface of the base pad. Alternatively, the supports can project inward from the periphery of the polishing element so that they are below the bottom surface of the polishing element. The supports for the polishing elements can be arranged so that they do not contact each other, particularly where they contact the base pad. The farthest distance from one support to another for the same polishing element, where it contacts the base pad, can be the same or longer than the distance between the supports where the support contacts the polishing element. The farthest distance from one support to another support for the same abrasive element, where the support contacts its base pad, can be at least 10%, at least 20%, at least 50%, at least 100%, up to 3500%, up to 2500%, up to 1000%, up to 500%, up to 400%, up to 300%, or up to 200% longer than the longest distance of the abrasive element in the x-y plane. The farthest distance from one support to another support for the same abrasive element, where the support contacts its base pad, can be at least 0.1 mm, or at least 0.5 mm, up to 100 mm, up to 50 mm, up to 20 mm, up to 10 mm, up to 5 mm, up to 3 mm, up to 2 mm, or up to 1 mm.

[0037] The support height (distance from the top surface of the base pad to the bottom surface of the polishing element) can be at least 0.05, at least 0.1, at least 0.2, and can be up to 3 mm, up to 2 mm, up to 1 mm, up to 0.8 mm, or up to 0.5 mm. The cross-section of the support element in the xy plane can be at least 0.02 mm, at least 0.05 mm, or at least 0.1 mm, and can be up to 2 mm, up to 1 mm, or up to 0.5 mm.

[0038] For a substantially straight support, as seen between the support 30 and the polishing element 20 in FIG. 5, the angle α from the normal to the polishing element can be 0 degrees, or at least 10 degrees, or at least 20 degrees, and can be in the range of up to 60 degrees, up to 50 degrees, up to 45 degrees, or up to 40 degrees.

[0039] 4 shows a support having curved supports 30 that extend in the x and y directions beyond the circumference of the polishing element 20, for example, by at least 20%, at least 50%, or at least 100%, up to 400%, or up to 300%, based on the distance across the polishing element. These shapes can be spider-like and defined by parametric equations. Alternatively, the support can have two or more straight segments.

[0040] The supports of the abrasive elements can be separated from the supports for adjacent abrasive elements where they contact the base pad by at least 0.01 mm, at least 0.02 mm, and can be up to 40 mm, up to 30 mm, up to 20 mm, up to 10 mm, up to 5 mm, up to 2 mm, or up to 1 mm.

[0041] The support of an abrasive element may optionally contact the support for an adjacent abrasive element where they contact the base pad. Advantageously, the support for an abrasive element is separate from and does not contact the support from all adjacent abrasive elements.

[0042] When polyurethane is used for the base pad and / or the protruding structure, it may be a reaction product of a polyfunctional isocyanate and a polyol. For example, a polyisocyante-terminated urethane prepolymer may be used. The polyfunctional isocyanate used in forming the polishing layer of the chemical mechanical polishing pad of the present invention may be selected from the group consisting of aliphatic polyfunctional isocyanates, aromatic polyfunctional isocyanates, and mixtures thereof. For example, the polyfunctional isocyanate used in forming the polishing layer of the chemical mechanical polishing pad of the present invention can be a diisocyanate selected from the group consisting of 2,4-toluene diisocyanate, 2,6-toluene diisocyanate, 4,4'-diphenylmethane diisocyanate, naphthalene-1,5-diisocyanate, tolidine diisocyanate, paraphenylene diisocyanate, xylylene diisocyanate, isophorone diisocyanate, hexamethylene diisocyanate, 4,4'-dicyclohexylmethane diisocyanate, cyclohexane diisocyanate, and mixtures thereof. The polyfunctional isocyanate can be an isocyanate-terminated urethane prepolymer formed by the reaction of a diisocyanate with a prepolymer polyol. The isocyanate-terminated urethane prepolymer may have 2-12 wt%, 2-10 wt%, 4-8 wt%, or 5-7 wt% unreacted isocyanate (NCO) groups. The prepolymer polyol used to form the polyfunctional isocyanate-terminated urethane prepolymer may be selected from the group consisting of diols, polyols, polyol diols, copolymers thereof, and mixtures thereof.For example, the prepolymer polyol may be selected from the group consisting of polyether polyols (e.g., poly(oxytetramethylene) glycol, poly(oxypropylene) glycol, and mixtures thereof); polycarbonate polyols; polyester polyols; polycaprolactone polyols; mixtures thereof; and mixtures thereof with one or more low molecular weight polyols selected from the group consisting of ethylene glycol; 1,2-propylene glycol; 1,3-propylene glycol; 1,2-butanediol; 1,3-butanediol; 2-methyl-1,3-propanediol; 1,4-butanediol; neopentyl glycol; 1,5-pentanediol; 3-methyl-1,5-pentanediol; 1,6-hexanediol; diethylene glycol; dipropylene glycol; and tripropylene glycol. For example, the prepolymer polyol can be selected from the group consisting of polytetramethylene ether glycol (PTMEG); ester-based polyols (e.g., ethylene adipate, butylene adipate); polypropylene ether glycol (PPG); polycaprolactone polyols; copolymers thereof; and mixtures thereof. For example, the prepolymer polyol can be selected from the group consisting of PTMEG and PPG. When the prepolymer polyol is PTMEG, the isocyanate-terminated urethane prepolymer can have an unreacted isocyanate (NCO) concentration of 2 to 10 wt % (more preferably 4 to 8 wt %; most preferably 6 to 7 wt %).Examples of commercially available PTMEG-based isocyanate-terminated urethane prepolymers include Imuthane® prepolymers (available from COIM USA, Inc., e.g., PET-80A, PET-85A, PET-90A, PET-93A, PET-95A, PET-60D, PET-70D, PET-75D); Adiprene® prepolymers (available from Chemtura, e.g., LF 800A, LF 900A, LF 910A, LF 930A, LF 931A, LF 939A, LF 950A, LF 952A, LF 600D, LF 601D, LF 650D, LF 667, LF 700D, LF750D, LF751D, LF752D, LF753D, and L325); Andur® prepolymers (available from Anderson Development Available from Polypropylene Company include, for example, 70APLF, 80APLF, 85APLF, 90APLF, 95APLF, 60DPLF, 70APLF, and 75APLF. When the prepolymer polyol is PPG, the isocyanate-terminated urethane prepolymer may have an unreacted isocyanate (NCO) concentration of 3 to 9 wt % (more preferably 4 to 8 wt %, and most preferably 5 to 6 wt %). Examples of commercially available PPG-based isocyanate-terminated urethane prepolymers include Imuthane® prepolymers (e.g., PPT-80A, PPT-90A, PPT-95A, PPT-65D, and PPT-75D, available from COIM USA, Inc.); Adiprene® prepolymers (e.g., LFG 963A, LFG 964A, and LFG 740D, available from Chemtura); and Andur® prepolymers (e.g., 8000APLF, 9500APLF, 6500DPLF, and 7501DPLF, available from Anderson Development Company). The isocyanate-terminated urethane prepolymer may be a low-free isocyanate-terminated urethane prepolymer having a free toluene diisocyanate (TDI) monomer content of less than 0.1 wt%. Non-TDI-based isocyanate-terminated urethane prepolymers may also be used.For example, isocyanate-terminated urethane prepolymers include those formed by the reaction of 4,4'-diphenylmethane diisocyanate (MDI) with a polyol such as polytetramethylene glycol (PTMEG), although any diol such as 1,4-butanediol (BDO) is acceptable. When such isocyanate-terminated urethane prepolymers are used, the concentration of unreacted isocyanate (NCO) is preferably 4 to 10 wt% (more preferably 4 to 10 wt%, most preferably 5 to 10 wt%). Examples of commercially available isocyanate-terminated urethane prepolymers in this category include Imuthane® prepolymers (e.g., 27-85A, 27-90A, 27-95A available from COIM USA, Inc.); Andur® prepolymers (e.g., IE75AP, IE80AP, IE 85AP, IE90AP, IE95AP, IE98AP available from Anderson Development Company); and Vibrathane® prepolymers (e.g., B625, B635, B821 available from Chemtura).

[0043] The polishing elements with their supports can be arranged in any configuration on the base pad. For example, they can be arranged in a hexagonal packing structure oriented in the same direction. As another example, they can be arranged in a radial pattern with one lobe oriented to align with the radiation. The polishing elements can be spaced apart, i.e., with a pitch, that is at least 1.5 times, or at least 2 times, and up to 50 times, 20 times, 10 times, 7 times, 5 times, or 4 times the longest dimension of the cross section of the polishing elements. For example, the pitch can be at least 0.7 mm, at least 1 mm, at least 5 mm, or at least 10 mm, and up to 100 mm, 50 mm, or 20 mm. The distance from the outer periphery of one abrasive element to the nearest outer periphery of an adjacent abrasive element can be at least 0.02 mm, at least 0.05 mm, at least 0.1 mm, at least 0.5 mm, or at least 1 mm, up to 40 mm, up to 30 mm, up to 20 mm, up to 10 mm, or up to 5 mm.

[0044] The contact area ratio is the cumulative surface contact area of ​​the plurality of abrasive elements (i.e., the abrasive surface area of ​​all abrasive elements on the pad), Acpsa, divided by the area of ​​the base, Ab. According to some embodiments, the ratio Acpsa / Ab is at least 0.1, 0.2, 0.3, or 0.4, and not more than 0.8, 0.75, 0.7, 0.65, or 0.6. In other words, the upper abrasive surfaces of the plurality of abrasive elements cumulatively have a limited area that is at least 10%, at least 20%, at least 30%, or at least 40% of the area of ​​the base, and up to 80%, 75%, 70%, 65%, or 60%.

[0045] The pad may be made by any suitable process, for example, the pad may be made by additive manufacturing according to known methods, with the support and abrasive elements being built on a pad base provided by such additive manufacturing, or the entire pad may be made by additive manufacturing.

[0046] Figure 7 shows the effectiveness versus support angle for a pad with square abrasive elements having a side length of 1 mm and a thickness of 0.25 mm. The structure has four support arms and a square cross section with a side length of 0.25 mm. The distance from the top of the base to the bottom of the abrasive elements is 1 mm. A pressure of 24 pounds per square inch per element (0.16 MPa) gives the effectiveness shown in Figure 7. The material used for the abrasive elements and support has a bulk modulus of 200 MPa.

[0047] This shows that the pad rate can be reduced to improve the conformance of the pad to the surface being polished while still using abrasive materials with good polishing effect in the polishing elements.

[0048] The present disclosure further encompasses the following aspects.

[0049] Aspect 1: A polishing pad useful in chemical mechanical polishing, comprising a base pad having an upper surface and a surface, and a plurality of polishing elements, each having an upper polishing surface and a bottom surface, wherein each of the plurality of polishing elements is attached to the upper surface of the base pad relative to the polishing elements by three or more supports, the supports being spaced apart from one another in the polishing elements and the base pad, and the bottom surfaces of the polishing elements, the upper surface of the base pad, and the supports define a compartment including at least one void, and there is an opening between the three or more supports.

[0050] Embodiment 2: The polishing pad of embodiment 1, wherein at least three supports extend from peripheral sections of the polishing elements to the upper surface of the base pad, and further includes a central support extending from the bottom surface of the polishing elements to the upper surface of the base pad.

[0051] Embodiment 3: The polishing pad of embodiment 1 or 2, wherein the upper polishing surface of each of the plurality of polishing elements defines a plane.

[0052] Embodiment 4: The pad of any one of Embodiments 1-3, wherein the upper polishing surface of each of the plurality of polishing elements is planar or substantially planar.

[0053] Embodiment 5: The pad of any one of Embodiments 1-4, wherein the upper polishing surface of each of the polishing elements is textured.

[0054] Embodiment 6: The polishing pad of any one of Embodiments 1-5, wherein the base pad, the plurality of discrete polishing elements, and the support are integral with one another.

[0055] Embodiment 7: The polishing pad of any one of Embodiments 1-6, wherein the polishing element comprises a first composition and the base pad comprises a second composition, and the first and second compositions are different.

[0056] Embodiment 8: The polishing pad of any one of embodiments 1 to 7, wherein the upper polishing surfaces of the plurality of polishing elements have a cumulative area of ​​at least 10%, at least 20%, at least 30%, or at least 40%, up to 80%, up to 75%, up to 70%, up to 65%, or up to 60%.

[0057] Embodiment 9: The polishing pad of any one of embodiments 1 to 8, wherein at least three supports are at or near the peripheral edge of the polishing element at an angle of 0 to 60 degrees, preferably 10 to 50 degrees, and more preferably 15 to 45 degrees relative to a perpendicular line from the base of the polishing element.

[0058] Embodiment 10: The polishing pad of any one of Embodiments 1-9, wherein the support is straight or curved and protrudes outside the peripheral edge of the polishing elements.

[0059] Embodiment 11: The polishing pad of any one of embodiments 1 to 10, having an effective compressibility of at least 10%, preferably at least 20%, up to 90%, preferably up to 70%, and more preferably up to 50% of the compressibility of the material used in the polishing elements.

[0060] Aspect 12: The polishing pad of any one of Aspects 1 to 11, having an effective compressibility of at least 0.1 megapascals (MPa), at least 1 MPa, at least 5 MPa, at least 10 MPa, at least 20 MPa, at least 40 MPa, at least 50 MPa, at least 70 MPa, or at least 100 MPa, up to 5 gigapascals (GPa), or up to 1 GPa, or up to 700 MPa, up to 500 MPa, or up to 300 MPa.

[0061] Embodiment 13: The polishing pad according to any one of Embodiments 1 to 12, wherein the distance from the top surface of the base pad to the bottom surface of the polishing elements is 0.1 to 2 mm, preferably 0.2 to 1.5 mm.

[0062] Embodiment 14: The polishing pad of any one of Embodiments 1-13, wherein the polishing elements have a thickness and cross-section that is independent of the support.

[0063] Embodiment 15: The polishing pad of any one of embodiments 1 to 14, wherein where the supports contact the polishing elements, the supports are at a distance from each other (in the xy plane) of 5 to 40%, preferably 10 to 30%, of the longest dimension of the polishing elements.

[0064] Embodiment 16: The polishing pad of any one of Embodiments 1 to 15, wherein the supports do not contact each other.

[0065] Embodiment 17: A method comprising providing a substrate and polishing the substrate using the polishing pad of any one of Embodiments 1-16.

[0066] Embodiment 18: The method of embodiment 17, wherein the voids remain during polishing.

[0067] Embodiment 19: The method of embodiment 17 or 18, wherein the polishing medium is provided on a polishing pad.

[0068] Embodiment 20: The method of any one of embodiments 17-9, wherein during polishing, the upper polishing surface wears away, exposing the subsequent polishing surface, and the area of ​​the subsequent polishing surface region differs from the area of ​​the upper polishing surface region by less than 25%, preferably less than 20%, more preferably less than 15%, even more preferably less than 10%, and most preferably less than 5%.

[0069] The compositions, methods, and articles may alternatively comprise, consist of, or consist essentially of any suitable material, step, or component disclosed herein. The compositions, methods, and articles may additionally or alternatively be designed to be devoid of, or substantially free of, any material (or type), step, or component that is not otherwise necessary for the function or achievement of the purpose of the compositions, methods, and articles.

[0070] All ranges disclosed herein are inclusive of the endpoints, and the endpoints may be independently combined with each other (e.g., the range "up to 25 wt.%, or more specifically, 5 wt.% to 20 wt.%" includes the endpoints and all intermediate values ​​in the range "5 wt.% to 25 wt.%, etc.). Additionally, specified upper and lower limits may be combined to form ranges (e.g., "at least 1 or at least 2 wt.%" and "up to 10 wt.% or 5 wt.%" may be combined, such as the ranges "1 to 10 wt.%," or "1 to 5 wt.%," or "2 to 10 wt.%," or "2 to 5 wt.%"). "Combination" includes blends, mixtures, alloys, reaction products, and the like. The terms "first," "second," and the like do not denote any order, amount, or importance, but rather are used to distinguish one element from another. The terms "a," "an," and "the" do not denote numerical limitations and should be construed to encompass both the singular and the plural unless otherwise stated herein or clearly contradicted by context. "Or" means "and / or" unless otherwise indicated. References throughout the specification to "some embodiments," "embodiments," and the like mean that a particular element described in connection with that embodiment is included in at least one embodiment described herein and may or may not be present in other embodiments. In addition, it should be understood that the described elements may be combined in any suitable manner in various embodiments. "Combinations thereof" are open and include any combination including at least one of the recited components or features, optionally together with similar or equivalent unrecited components or features.

[0071] Unless otherwise specified herein, all test standards are the latest standards in effect as of the filing date of this application, or, if priority is claimed, as of the filing date of the earliest priority application in which the test standard appears.

Claims

1. a base pad having an upper surface, said upper surface defining a plane; 1. A polishing pad for chemical mechanical polishing, comprising a plurality of polishing elements, each having an upper polishing surface and a bottom surface, Each of the plurality of polishing elements is directly connected to the top surface of the base pad to the polishing element by three or more linear supports without an intervening layer, the linear supports being spaced apart from one another on the polishing element and on the base pad, the three or more linear supports extending from a peripheral edge of the bottom surface of the polishing element to be at or near the peripheral edge of the polishing element, and extending outward beyond the peripheral edge between the linear supports and the polishing element at an angle of 10 to 50 degrees from a normal to the bottom surface of the polishing element; and wherein the bottom surface of the polishing element, the top surface of the base pad, and the linear supports define a compartment including a void, and there are openings between the three or more linear supports for transport of a polishing fluid.

2. 2. The polishing pad of claim 1, wherein at least three linear supports extend from peripheral sections of the polishing elements to the upper surface of the base pad, and further includes a central support extending from the bottom surface of the polishing elements to the upper surface of the base pad.

3. 2. The polishing pad of claim 1, wherein the material used in the polishing element comprises polycarbonate, polysulfone, nylon, polyether, polyester, polystyrene, acrylic polymer, polymethyl methacrylate, polyvinyl chloride, polyvinyl fluoride, polyethylene, polypropylene, polybutadiene, polyethyleneimine, polyurethane, polyethersulfone, polyamide, polyetherimide, polyketone, epoxy, silicone, copolymers thereof, and combinations thereof.

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