High-voltage substrate processing equipment

Abstract

The present invention provides a high-pressure substrate processing apparatus including: an outer chamber having an inner chamber formed to accommodate a substrate for processing; a hollow housing; and a partition plate arranged to divide the housing into a high-temperature zone accommodating the inner chamber and a low-temperature zone having a temperature lower than that of the high-temperature zone; an air supply module configured to supply a reactive gas for processing the substrate to the inner chamber at a first pressure higher than atmospheric pressure and to supply a protective gas to a space between the outer chamber and the inner chamber at a second pressure set relative to the first pressure; an exhaust module connected to the inner chamber and having an exhaust pipe passing through the low-temperature zone, configured to exhaust a mixed gas containing the reactive gas and by-products generated by the processing; and a collection module connected to the exhaust pipe and arranged in the low-temperature zone, configured to collect the by-products in the mixed gas.

Description

[Technical Field]

[0001] The present invention relates to a processing apparatus for processing a substrate in a high-pressure environment. [Background technology]

[0002] Generally, during the manufacturing process of a semiconductor device, a semiconductor substrate is subjected to various processes, such as oxidation, nitridation, silicidation, ion implantation, deposition, etc. Hydrogen or deuterium heat treatment processes are also used to improve interface properties of semiconductor devices.

[0003] Gases used in processing are supplied into the chamber and act on the semiconductor substrate, and during such action, by-products such as particles may be released from the semiconductor substrate.

[0004] During the exhaust stage of the process, the by-products are discharged mixed with the gas used in the process. The by-products are in a gaseous state in a high-temperature environment, but solidify during or after the process of leaving the processing equipment.

[0005] The solidified by-products accumulate on the inner walls of exhaust pipes, gas exhaust valves, scrubbers, vacuum pumps, etc., causing problems by blocking the flow paths of piping and various equipment, which can sometimes occur over a considerable distance along the flow path of gases and by-products.

[0006] To address this issue, devices for capturing by-products, such as cold traps, are used. Cold traps cool the exhaust gas to capture the by-products, and the cooling performance determines the efficiency of by-product capture. Cold traps are traditionally installed immediately before the scrubber to address the problem of blockage of the flow path between the scrubber and the vacuum pump. Summary of the Invention [Problem to be solved by the invention]

[0007] It is an object of the present invention to provide a high-pressure substrate processing apparatus that can remove by-products within the chamber to prevent the adverse effects of the by-products from spreading beyond the chamber.

[0008] Another object of the present invention is to provide a high-pressure substrate processing apparatus that does not require a high-level high-pressure design for a by-product collection module used in high-pressure processing of a substrate. [Means for solving the problem]

[0009] According to one aspect of the present invention, a high-pressure substrate processing apparatus for achieving the above object may include an outer chamber having an inner chamber formed to accommodate a substrate for processing, a hollow housing, and a partition plate arranged to divide the housing into a high-temperature zone accommodating the inner chamber and a low-temperature zone having a temperature lower than that of the high-temperature zone; an air supply module configured to supply a reactive gas to the inner chamber at a first pressure higher than atmospheric pressure for processing the substrate and to supply a protective gas to a space between the outer chamber and the inner chamber at a second pressure set relative to the first pressure; an exhaust module connected to the inner chamber and having an exhaust pipe passing through the low-temperature zone, configured to exhaust a mixed gas containing the reactive gas and by-products generated by the processing; and a collection module connected to the exhaust pipe and disposed in the low-temperature zone, configured to collect the by-products in the mixed gas.

[0010] Here, the exhaust module may further include a gas discharger installed in the exhaust pipe so as to be located outside the outer chamber and configured to control the discharge of the mixed gas to the outside through the collection module, and the collection module may be located before the gas discharger.

[0011] Here, a cooling water supply module having a cooling water supply pipe may be further included, and the collection module may be configured so that the mixed gas is cooled by the cooling water flowing along the cooling water supply pipe, and the by-product is turned into powder.

[0012] Here, the collection module may include a pair of exhaust pipe connectors detachably connected to the exhaust pipe, and a pair of cooling water supply pipe connectors detachably connected to the cooling water supply pipe.

[0013] Here, the pair of exhaust pipe connecting portions may be arranged along an extension direction of the exhaust pipe, and the pair of cooling water supply pipe connecting portions may be arranged along a cross direction intersecting the extension direction.

[0014] Here, the cooling water supply module may supply cooling water to one of the housing and the partition plate to cool the low-temperature area.

[0015] Here, the system further includes a sensing module having a temperature sensor that measures the temperature of the exhaust pipe, and a control module connected to the temperature sensor and the cooling water supply module, and the control module can adjust the temperature of the cooling water based on the temperature of the exhaust pipe obtained from the temperature sensor.

[0016] Here, the cooling water supply module further includes a chiller configured to cool the cooling water, and the control module can operate the chiller to reduce the temperature of the cooling water.

[0017] Here, the system may further include a sensing module having a pressure sensor at the rear end of the collection module for measuring the pressure of the exhaust pipe, and a control module connected to the pressure sensor, and the control module may output a replacement time for the collection module based on the pressure of the exhaust pipe obtained from the pressure sensor.

[0018] According to another aspect of the present invention, a high-pressure substrate processing apparatus may include an inner chamber configured to accommodate a substrate to be processed, an outer chamber having a hollow housing that accommodates the inner chamber, an air supply module configured to supply a reactive gas for processing the substrate to the inner chamber at a first pressure higher than atmospheric pressure and to supply a protective gas to a space between the outer chamber and the inner chamber at a second pressure set relative to the first pressure, an exhaust module having an exhaust pipe connected to the inner chamber and configured to exhaust a mixed gas containing the reactive gas and by-products generated by the processing to the outside of the outer chamber, and a collection module disposed within the outer chamber while connected to the exhaust pipe, externally exposed to the second pressure by the protective gas and internally exposed to the first pressure by the reactive gas, and configured to collect the by-products in the mixed gas.

[0019] Here, the difference between the first pressure and the second pressure may be 2 ATM or less.

[0020] Here, the exhaust module may further include a gas discharger installed in the exhaust pipe and configured to adjust the discharge of the mixed gas, and the collection module may be located before the gas discharger.

[0021] Here, a heating module configured to heat the reaction gas for processing the substrate may be further included, and the outer chamber may further include a partition plate that divides the housing into a high-temperature zone that accommodates the inner chamber and the heating module and a low-temperature zone having a temperature lower than that of the high-temperature zone, and the low-temperature zone may be charged with cold air.

[0022] Here, a cooling water supply module is further included, and the collection module is configured to cool the mixed gas with cooling water supplied by the cooling water supply module to turn the by-product into powder, and the low-temperature zone can generate cold air with cooling water supplied to either the housing or the partition plate by the cooling water supply module. [Effects of the Invention]

[0023] In the high-pressure substrate processing apparatus according to the present invention configured as described above, when gas is exhausted from the inner chamber while gas at a first pressure or a second pressure is supplied to each of the inner chamber accommodating the substrate and the outer chamber surrounding the inner chamber, the collection module is installed and operates in the exhaust pipe in the outer chamber, so that problems caused by by-products do not spread beyond the outer chamber.

[0024] The collection module is exposed to a first pressure internally through communication with the internal chamber and to a second pressure externally set in a fixed relationship to the first pressure, so that a high-level high-pressure design for the collection module is not required despite high-pressure processing of the substrate.

[0025] By locating the capture module in a low temperature zone within the outer chamber that is distinct from the high temperature zone, the capture module can more effectively cool the gases exhausted from the inner chamber and capture the by-products more efficiently. [Brief explanation of the drawings]

[0026] [Figure 1] 1 is a conceptual diagram of a high-pressure substrate processing apparatus 100 according to an embodiment of the present invention. [Figure 2] 2 is a partial cross-sectional view showing the specific relationship between chambers 110 and 120 and trapping module 150 of FIG. 1. FIG. [Figure 3] 2 is a conceptual diagram showing the connection relationship between the collection module 150, the cooling water supply module 170, and the sensing module 180 of FIG. 1. [Figure 4] FIG. 2 is a block diagram showing a control configuration for the high-voltage substrate processing apparatus 100 of FIG. [Figure 5] FIG. 2 is a perspective view showing the structure of the collection module 150 of FIG. DETAILED DESCRIPTION OF THE INVENTION

[0027] Hereinafter, a high-pressure substrate processing apparatus according to a preferred embodiment of the present invention will be described in detail with reference to the accompanying drawings. In this specification, the same or similar reference numerals are used to refer to the same or similar components in different embodiments, and the description thereof supersedes the first description.

[0028] FIG. 1 is a conceptual diagram of a high-pressure substrate processing apparatus 100 according to one embodiment of the present invention.

[0029] As shown in this figure, the high pressure substrate processing apparatus 100 may include an inner chamber 110 , an outer chamber 120 , an air supply module 130 , an exhaust module 140 , and a collection module 150 .

[0030] The inner chamber 110 forms a reaction space that accommodates objects to be processed. The inner chamber 110 may be made of a non-metallic material, such as quartz, to reduce contamination in a high-temperature and high-pressure working environment. Although simplified in the drawing, a door that opens the reaction space is provided at the bottom of the inner chamber 110. The reaction space is opened by lowering the door, and the objects are loaded into the inner chamber 110 while still attached to a holder (not shown). The objects may be, for example, semiconductor substrates. In this case, the holder may be a wafer boat that can stack multiple layers of semiconductor substrates.

[0031] The outer chamber 120 is disposed to completely enclose the inner chamber 110. Unlike the inner chamber 110, the outer chamber 120 may be made of metal because it is free from contamination issues. The outer chamber 120 has a hollow housing 121 having an internal space for accommodating the inner chamber 110. The housing 121 also has a door at the bottom, which opens in conjunction with the door of the inner chamber 110 when it is opened.

[0032] The gas supply module 130 is configured to supply gas to the inner chamber 110 and the outer chamber 120. The gas supply module 130 has a gas supplier 131 serving as a gas source. The gas supplier 131 may selectively supply a reactive gas, such as hydrogen / deuterium, fluorine, ammonia, chlorine, or nitrogen, to the inner chamber 110. The gas supplier 131 may also supply a protective gas, such as an inert gas, such as nitrogen, to the outer chamber 120. These reactive gases and protective gases are supplied to the inner chamber 110 and the outer chamber 120 via a reactive gas line 133 and a protective gas line 135, respectively. The protective gas supplied to the outer chamber 120 specifically fills the space between the outer chamber 120 and the inner chamber 110.

[0033] The reactive gas and the protective gas may be supplied to form a pressure higher than atmospheric pressure, for example, a high pressure of several atmospheres to several tens of atmospheres. When the reactive gas pressure is a first pressure and the protective gas pressure is a second pressure, they may be maintained in a set relationship (range). For example, the second pressure may be set to be slightly higher than the first pressure. The pressure difference between the first pressure and the second pressure may be, for example, 2 ATM or less. This pressure difference provides the advantage of preventing the reactive gas from leaking from the internal chamber 110.

[0034] The exhaust module 140 is configured to exhaust the reaction gas and the protective gas. First, an exhaust pipe 141 is connected to the inner chamber 110 to exhaust the reaction gas from the inner chamber 110. The exhaust pipe 141 may be connected to the upper part of the inner chamber 110 and extend to the outside of the outer chamber 120. A gas exhauster 143 may be installed in the exhaust pipe 141. The gas exhauster 143 may be a gas exhaust valve that controls the exhaust of the reaction gas. The first pressure can be maintained or adjusted lower by operating the gas exhauster 143. The reaction gas is mixed with by-products generated by processing the substrate. Because the reaction gas and the by-products are mixed with each other, they may be referred to as a mixed gas.

[0035] Similarly, an exhaust pipe 145 communicating with the outer chamber 120 and a gas exhauster 147 installed therein are provided to exhaust the protective gas from the outer chamber 120. Since the exhaust pipes 141 and 145 are connected to each other, the reactive gas is diluted with the protective gas, and its concentration is reduced.

[0036] The collection module 150 is configured to collect the by-products in the mixed gas flowing along the exhaust pipe 141. The collection module 150 is disposed in the outer chamber 120 while communicating with the exhaust pipe 141. The collection module 150 is also located in the exhaust pipe 141 before the gas ejector 143 along the gas discharge direction.

[0037] With this configuration, since the capture module 150 is located within the external chamber 120, the by-products are captured within the external chamber 120. As a result, the by-products do not cross the external chamber 120 and adversely affect the portion of the exhaust pipe 141 following the capture module 150, the gas ejector 143, and other related devices such as scrubbers.

[0038] The gas discharger 143 discharges the reaction gas from the inner chamber 110 to adjust, mainly reduce, the first pressure. Adjusting the first pressure is accompanied by adjusting the second pressure, which has a set relationship therewith. Because the protective gas is not contaminated with by-products, the gas discharger 147 for adjusting the second pressure operates without being adversely affected by the by-products. Therefore, the gas discharger 143 for adjusting the first pressure must operate normally without being adversely affected by the by-products. For this reason, the collection module 150 is located before the gas discharger 143. The normal operation of the gas discharger 143 due to the influence of the collection module 150 is important not only for adjusting the first pressure, but also for adjusting the second pressure related to the first pressure.

[0039] Since collection module 150 is connected to internal chamber 110 via exhaust pipe 141, it is internally exposed to the first pressure. Externally, collection module 150 is exposed to the second pressure due to the protective gas. Because the second pressure maintains a set relationship with the first pressure, the pressure difference between them is not large. Even if the first pressure reaches several tens of atmospheres, collection module 150 is exposed to the pressure difference, not the first pressure, and therefore does not need to be designed with a high level of pressure corresponding to several tens of atmospheres.

[0040] FIG. 2 is a partial cross-sectional view illustrating the specific relationship between chambers 110, 120 and trapping module 150 of FIG.

[0041] As shown in this figure, the housing 121 of the outer chamber 120 may include a body portion 121a and a cover portion 121b. The body portion 121a may have a generally cylindrical shape, and the cover portion 121b may have a shape corresponding to the open top of the body portion 121a. The cover portion 121b may have a generally dome shape.

[0042] The space defined by the housing 121, i.e., the internal space, is divided into two zones by a partition plate 125. The partition plate 125 is supported by the body 121a and disposed below the cover 121b. The partition plate 125 defines a high-temperature zone 123 together with the body 121a, and defines a low-temperature zone 127 together with the cover 121b. The high-temperature zone 123 and the low-temperature zone 127 are in communication with each other via a communication hole (not shown) formed in the partition plate 125, and can have the same pressure (the second pressure) therebetween.

[0043] In addition to the inner chamber 110, a heating module 160 is also disposed in the high temperature zone 123. The heating module 160 may include a heater 161 and an insulating block 165. The heater 161 may have a shape that surrounds the inner chamber 110. The heat generated by the heater 161 heats the protective gas in the high temperature zone 123 and the reaction gas in the inner chamber 110. By operating the heater 161, the temperature of the reaction gas can reach several hundred to several thousand degrees Celsius. The insulating block 165 houses the heater 161 and prevents the heat of the heater 161 from being transferred to the body 121a.

[0044] A heat insulating layer 125a is provided on the lower part of the partition plate 125 corresponding to the heater 161. The heat insulating layer 125a may be disposed on the upper side of the heating module 160 so as to face the heater 161. The heat insulating layer 125a is intended to block the heat generated by the heater 161 from being transferred to the low temperature zone 127.

[0045] A cooling layer 125b is provided on the upper part of the partition plate 125. The cooling layer 125b has a space for accommodating a cooling medium, for example, cooling water. Corresponding to the cooling layer 125b, the cover part 121b may also have a space for accommodating cooling water. The cover part 121b can accommodate a larger amount of cooling water than the partition plate 125.

[0046] The cooling water contained in the cover portion 121b and / or the cooling layer 125b fills the low temperature zone 127 with cold air, so that the temperature of the low temperature zone 127 can be maintained much lower than the temperature of the high temperature zone 123, for example, at less than one-tenth the temperature of the high temperature zone 123.

[0047] The trapping module 150 may be installed in the exhaust line 141 that passes through the cold zone 127 while remaining in the cold zone 127. The trapping module 150, and in turn the reactant gases that remain in the exhaust line 141 and trapping module 150, are subject to the cold air.

[0048] With this configuration, the mixed gas flows from the high temperature zone 123 to the low temperature zone 127 and passes through the collection module 150. As a result, the mixed gas passes through the collection module 150 at a temperature that is significantly lower than the high temperature at which the substrate is processed. The low temperature zone 127 serves to improve the cooling performance of the collection module 150 by preemptively or preemptively cooling the mixed gas. As a result, the cooling load on the collection module 150 is reduced, or the cooling efficiency of the collection module 150 is increased. The collection efficiency of the collection module 150 is also improved.

[0049] The connection relationship between the collection module 150 and the surrounding components will be described with reference to Fig. 3. Fig. 3 is a conceptual diagram showing the connection relationship between the collection module 150, the cooling water supply module 170, and the sensing module 180 of Fig. 1.

[0050] As shown in this figure, the collection module 150, as previously described, communicates with the exhaust pipe 141. The collection module 150 may also communicate with a cooling water supply pipe 171 of a cooling water supply module 170.

[0051] The cooling water supply module 170 supplies cooling water to components other than the collection module 150 via the cooling water supply pipe 171 and other supply pipes (not shown). The cooling water supply module 170 also supplies cooling water to the cover part 121b of the outer chamber 120 and the cooling layer 125b (see FIG. 2) described above.

[0052] The cooling water flowing through the cooling water supply pipe 171 cools the mixed gas flowing through the collection module 150. The by-products exist as gas in a high-temperature environment and solidify into powder when cooled. The powder accumulates within the collection module 150 and does not flow out of the outer chamber 120.

[0053] To ensure efficient operation of the collection module 150 and to determine when to replace it, a sensing module 180 may be installed to acquire information related to the collection module 150. The sensing module 180 may include a temperature sensor 181 and a pressure sensor 185.

[0054] The temperature sensor 181 measures the temperature of the exhaust pipe 141. Since the temperature sensor 181 is located upstream of the collection module 150, the temperature of the mixed gas flowing into the exhaust pipe 141 can be measured.

[0055] The pressure sensor 185 measures the pressure in the exhaust pipe 141. The pressure sensor 185 is located downstream of the collection module 150, so that it can measure the pressure (and its change) caused by the presence of the exhaust pipe 141 where the powder accumulates.

[0056] The control based on the information obtained from the sensing module 180 will be described with reference to Fig. 4. Fig. 4 is a block diagram showing the control configuration for the high-pressure substrate processing apparatus 100 of Fig. 1.

[0057] As shown in this figure, the cooling water supply module 170 may further include a chiller 175. The chiller 175 is for lowering the temperature of the cooling water supplied via the cooling water supply pipe 171 or the like.

[0058] In addition to the cooling water supply module 170, the treatment device 100 may further include a control module 190 and a storage module 195. The control module 190 is connected to the sensing module 180 and the cooling water supply module 170. The control module 190 is configured to control the cooling water supply module 170 or output a replacement time for the collection module 150 based on the sensing result of the sensing module 180. The storage module 195 is configured to store data, programs, etc. that the control module 190 can refer to for control.

[0059] The control module 190 receives the temperature of the tip of the exhaust pipe 141 from the temperature sensor 181 connected thereto. The temperature of the tip of the exhaust pipe 141 may be at the level of several hundred to several thousand degrees Celsius, corresponding to the temperature of the inner chamber 110. The control module 190 can adjust the temperature of the cooling water according to the temperature of the exhaust pipe 141 and the temperature of the low-temperature section 127. If the temperature of the exhaust pipe 141 is high, the temperature of the cooling water is further reduced. The control module 190 can further reduce the temperature of the cooling water by operating the chiller 175. The control module 190 determines the operation level of the chiller 175 by referring to the storage module 195.

[0060] The control module 190 may receive the pressure at the rear end of the exhaust pipe 141 from the pressure sensor 185. The pressure in the exhaust pipe 141 varies depending on the state of the collection module 150. When the collection module 150 has been used for a long time, the pressure in the exhaust pipe 141 changes compared to when it has just been used. This is because the flow path in the collection module 150 becomes narrower as the powder accumulates inside the collection module 150. Based on this pressure change, the control module 190 can calculate when to replace the collection module 150. If the collection module 150 needs to be replaced, the control module 190 will sound an alarm using a buzzer or display, or transmit the information to a management computer. The specific extent (point) of the replacement time is determined by the control module 190 with reference to the storage module 195.

[0061] The specific structure of the above-mentioned collection module 150 will be described with reference to Fig. 5. Fig. 5 is a perspective view showing the structure of collection module 150 of Fig. 1.

[0062] As shown in this figure, the collection module 150 may include a body 151 , a pair of exhaust pipe connections 152 and 153 , a cooling water coil 155 , a pair of cooling water supply pipe connections 156 and 157 , and filters 158 and 159 .

[0063] The body 151 is a hollow body having an internal space. The body 151 may have, for example, a hexahedral shape. The body 151 may be made of a metal material.

[0064] A pair of exhaust pipe connectors 152 and 153 are coupled to both sides of the body 151. Specifically, they may be arranged in a line along the flow direction (F) of the mixed gas (the extension direction of the exhaust pipe 141). One of them, the inlet exhaust pipe connector 152, may be coupled to the right side of the body 151, and the other, the outlet exhaust pipe connector 153, may be coupled to the left side of the body 151. These are detachably coupled to the exhaust pipe 141. They also allow the mixed gas to communicate with the interior space of the body 151.

[0065] The cooling water coil 155 is disposed in the inner space of the body 151 to cool the mixed gas. The cooling water coil 155 is wound in a coil shape to maximize the time that the cooling water remains in the body 151.

[0066] A pair of cooling water supply pipe connectors 156 and 157 are configured to be installed at both ends of the cooling water coil 155. The connectors 156 and 157 detachably connect the cooling water coil 155 to a cooling water supply pipe 171 (see FIG. 2). One of the connectors 156 and 157 is for supplying the cooling water from the cooling water supply pipe 171, while the other is for returning the cooling water that has passed through the cooling water coil 155 to the cooling water supply pipe 171. The connectors 156 and 157 are arranged along an intersecting direction (I) that intersects with the extension direction (F).

[0067] The filters 158 and 159 are configured to filter the by-products or the powder in the internal space of the body 151. One of the filters 158 and 159 may be disposed between the inlet exhaust pipe connection portion 152 and the cooling water coil 155, and the other may be disposed between the cooling water coil 155 and the outlet exhaust pipe connection portion 153.

[0068] With this configuration, the by-products in the mixed gas solidify into the powder due to the cooling action of the cooling water flowing through the cooling water coil 155. The powder accumulates in the internal space of the body 151. Even if some powder remains, it is prevented from being discharged to the outside of the body 151 by the filters 158 and 159. By controlling the by-products, the problem of blockage due to the by-products in the gas flow path after the collection module 150 does not occur.

[0069] Due to the accumulation of the powder, the trapping module 150 itself does not have a permanent lifespan. As described above with reference to Figure 4, an administrator must measure the pressure in the exhaust pipe 141 to determine the lifespan of the trapping module 150 and replace it accordingly. To replace the trapping module 150, an administrator simply separates a total of four connections, including exhaust pipe connections 152 and 153 and cooling water supply pipe connections 156 and 157. This allows the administrator to replace only the trapping module 150 with a new one, leaving the exhaust pipe 141 and cooling water supply pipe 171 intact.

[0070] The high-pressure substrate processing apparatus is not limited to the configurations and operation methods of the above-described embodiments, and may be configured to be variously modified by selectively combining all or part of the above-described embodiments. [Industrial Applicability]

[0071] The present invention has industrial applicability in the field of manufacturing high-pressure substrate processing apparatuses.

Claims

1. an interior chamber configured to accommodate a substrate for processing; an outer chamber comprising a hollow housing and a partition plate arranged to divide the housing into a high temperature area containing the inner chamber and a low temperature area having a temperature lower than that of the high temperature area; an air supply module configured to supply a reactive gas for processing the substrate to the inner chamber at a first pressure higher than atmospheric pressure and to supply a protective gas to a space between the outer chamber and the inner chamber at a second pressure set relative to the first pressure; an exhaust module configured to exhaust a mixed gas containing the reaction gas and by-products from the process, the exhaust module including an exhaust pipe communicating with the internal chamber and passing through the low temperature zone; a collection module disposed in the low temperature zone while communicating with the exhaust pipe and configured to collect the by-products in the mixed gas.

2. The exhaust module includes: a gas discharger installed in the exhaust pipe to be located outside the outer chamber and configured to control the discharge of the mixed gas to the outside through the collection module; The collection module comprises: The high pressure substrate processing apparatus of claim 1 , located before the gas ejector.

3. further comprising a cooling water supply module having a cooling water supply pipe; The collection module comprises: The high-pressure substrate processing apparatus according to claim 1 , wherein the mixed gas is cooled by cooling water flowing along the cooling water supply pipe, and the by-product is turned into powder.

4. The collection module comprises: a pair of exhaust pipe connecting portions detachably connected to the exhaust pipe; The high pressure substrate processing apparatus according to claim 3 , further comprising a pair of cooling water supply pipe connectors detachably connected to the cooling water supply pipe.

5. The pair of exhaust pipe connecting portions are arranged along an extension direction of the exhaust pipe, The high pressure substrate processing apparatus according to claim 4 , wherein the pair of cooling water supply pipe connecting portions are arranged along a cross direction that crosses the extension direction.

6. The cooling water supply module includes: The high pressure substrate processing apparatus according to claim 3 , wherein cooling water is supplied to either one of the housing and the partition plate to cool the low temperature zone.

7. a sensing module including a temperature sensor for measuring the temperature of the exhaust pipe; a control module coupled to the temperature sensor and the cooling water supply module; The control module The high pressure substrate processing apparatus according to claim 3 , wherein the temperature of the cooling water is adjusted based on the temperature of the exhaust pipe obtained from the temperature sensor.

8. The cooling water supply module includes: further comprising a chiller configured to cool the cooling water; The control module The high pressure substrate processing apparatus according to claim 7 , wherein the chiller is operated to lower the temperature of the cooling water.

9. a sensing module including a pressure sensor at the rear end of the collection module for measuring the pressure in the exhaust pipe; a control module coupled to the pressure sensor; The control module The high-pressure substrate processing apparatus according to claim 1 , wherein a replacement time for the collection module is output based on the pressure in the exhaust pipe obtained from the pressure sensor.

10. an internal chamber configured to accommodate a substrate to be processed; an outer chamber comprising a hollow housing containing the inner chamber; an air supply module configured to supply a reactive gas for processing the substrate to the inner chamber at a first pressure higher than atmospheric pressure and to supply a protective gas to a space between the outer chamber and the inner chamber at a second pressure set relative to the first pressure; an exhaust module including an exhaust pipe communicating with the inner chamber and configured to exhaust a mixed gas containing the reaction gas and by-products generated by the process to the outside of the outer chamber; a collection module disposed in an outer chamber while communicating with the exhaust pipe, externally exposed to the second pressure by the protective gas, and internally exposed to the first pressure by the reactive gas, and configured to collect the by-products in the mixed gas.

11. The high-pressure substrate processing apparatus of claim 10 , wherein the difference between the first pressure and the second pressure is 2 ATM or less.

12. The exhaust module includes: The exhaust pipe further includes a gas discharger configured to adjust the discharge of the mixed gas, The collection module comprises: The high pressure substrate processing apparatus of claim 10 , located before the gas ejector.

13. a heating module configured to heat the reactive gas for processing the substrate; The outer chamber comprises: a partition plate that divides the housing into a high temperature area that houses the internal chamber and the heating module and a low temperature area that has a temperature lower than that of the high temperature area; The low temperature zone is The high pressure substrate processing apparatus of claim 10, which is filled with cold air.

14. further comprising a cooling water supply module; The collection module comprises: The mixed gas is cooled by the cooling water supplied by the cooling water supply module, and the by-product is turned into powder; The low temperature zone is The high pressure substrate processing apparatus according to claim 13 , wherein the cool air is generated by cooling water supplied to one of the housing and the partition plate by the cooling water supply module.

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