Multilayer capacitor

Abstract

To provide a multilayer capacitor.SOLUTION: A multilayer capacitor according to an embodiment of the present invention includes a main body including a plurality of dielectric layers and a plurality of internal electrodes stacked with the dielectric layers interposed therebetween, and an external electrode formed outside the main body and connected to the internal electrode, and the plurality of dielectric layers includes a barium titanate-based composition containing an Sn component, the internal electrode includes a Sn component, and at least one of the plurality of dielectric layers has a Sn content twice or more that of an adjacent internal electrode from among the internal electrodes.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present invention relates to a multilayer capacitor. [Background technology]

[0002] A capacitor is an element that can store electricity. Basically, it consists of two electrodes facing each other, and when a voltage is applied, electricity accumulates in each electrode. When a DC voltage is applied, current flows inside the capacitor as electricity is stored, but once the storage is complete, the current stops flowing. On the other hand, when an AC voltage is applied, the polarity of the electrodes alternates, and an AC current flows.

[0003] Such capacitors can be classified into various types depending on the type of insulator provided between the electrodes, such as aluminum electrolytic capacitors in which the electrodes are made of aluminum and a thin oxide film is provided between the aluminum electrodes, tantalum capacitors that use tantalum as the electrode material, ceramic capacitors that use a high dielectric constant dielectric such as barium titanate between the electrodes, multi-layer ceramic capacitors (MLCCs) that use a high dielectric constant ceramic as a multilayer structure as the dielectric provided between the electrodes, and film capacitors that use a polystyrene film as the dielectric between the electrodes.

[0004] Among these, multilayer ceramic capacitors have the advantages of excellent temperature and frequency characteristics and being able to be realized in a small size, and therefore have been widely applied in various fields such as high-frequency circuits in recent years. In order to realize even smaller multilayer ceramic capacitors, attempts have been made in recent years to form thinner dielectric layers and internal electrodes. As the dielectric layers become thinner, problems arise in that high-temperature reliability and voltage resistance characteristics deteriorate, and attempts to solve these problems have been made in the art. Summary of the Invention [Problem to be solved by the invention]

[0005] An object of the present invention is to provide a multilayer capacitor that can improve high-temperature reliability and voltage resistance characteristics. [Means for solving the problem]

[0006] To solve the above problems, the present invention proposes a new structure for a multilayer capacitor, as an example. Specifically, the multilayer capacitor includes a main body including a plurality of dielectric layers and a plurality of internal electrodes stacked with the dielectric layers sandwiched therebetween, and external electrodes formed outside the main body and connected to the internal electrodes, wherein the plurality of dielectric layers contain a barium titanate-based composition containing Sn, the internal electrodes contain Sn, and at least one of the plurality of dielectric layers has at least twice the Sn content of an adjacent one of the internal electrodes.

[0007] In one embodiment, the dielectric layer may include a first Sn-rich region formed at an interface with the internal electrode, and the internal electrode may include a second Sn-rich region formed at an interface with the dielectric layer.

[0008] In one embodiment, the sum of the thicknesses of the first and second Sn-rich regions may be 5 nm or less.

[0009] In one embodiment, the first rich region may be thicker than the second Sn-rich region.

[0010] In one embodiment, the second rich region may be thicker than the first Sn-rich region.

[0011] In an embodiment, the sum of the Sn contents of the first and second Sn-rich regions may be 0.8 moles or more relative to 100 moles of Ti content of the dielectric layer.

[0012] In an embodiment, the content of Sn contained in the first Sn-rich region may be greater than the content of Sn contained in the remaining region of the dielectric layer excluding the first Sn-rich region.

[0013] In an embodiment, the content of Sn contained in the second Sn-rich region may be greater than the content of Sn contained in the remaining region of the internal electrode excluding the second Sn-rich region.

[0014] In an embodiment, the first Sn-rich region may have a Sn content that decreases from the interface toward the center of the dielectric layer.

[0015] In an embodiment, the second Sn-rich region may have a Sn content that decreases from the interface toward the center of the internal electrode.

[0016] In one embodiment, the first and second Sn-rich regions at the interface may have the same Sn content.

[0017] In one embodiment, the average thickness of the dielectric layer may be 500 nm or less.

[0018] In one embodiment, the average thickness of the internal electrodes may be 400 nm or less.

[0019] Meanwhile, another aspect of the present invention provides a multilayer capacitor including a main body including a plurality of dielectric layers and a plurality of internal electrodes stacked with the dielectric layers sandwiched therebetween, and external electrodes formed outside the main body and connected to the internal electrodes, wherein the plurality of dielectric layers comprise a barium titanate-based composition containing Sn, the internal electrodes contain Sn, the dielectric layers include a first Sn-rich region formed at an interface with the internal electrodes, and the internal electrodes include a second Sn-rich region formed at an interface with the dielectric layers, and the sum of the thicknesses of the first and second Sn-rich regions is 5 nm or less. [Effects of the Invention]

[0020] According to the multilayer capacitor according to an embodiment of the present invention, high temperature reliability and voltage resistance characteristics can be improved. [Brief explanation of the drawings]

[0021] [Figure 1] 1 is a perspective view schematically illustrating an external appearance of a multilayer capacitor according to an embodiment of the present invention; [Figure 2] FIG. 2 is a cross-sectional view taken along line II' in the multilayer capacitor of FIG. [Figure 3] FIG. 2 is a cross-sectional view taken along line II-II′ in the multilayer capacitor of FIG. [Figure 4] 1 shows an enlarged view of a portion of the dielectric layer and the internal electrode. [Figure 5] 1 is a graph showing the Sn content in a dielectric layer and an internal electrode. [Figure 6] 1 is a graph showing the Sn content in a dielectric layer and an internal electrode. DETAILED DESCRIPTION OF THE INVENTION

[0022] Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings. However, the embodiments of the present invention can be modified into various other forms, and the scope of the present invention is not limited to the embodiments described below. Furthermore, the embodiments of the present invention are provided to more completely explain the present invention to those having average knowledge in the art. Therefore, the shapes and sizes of elements in the drawings may be enlarged or reduced (or highlighted or simplified) for clearer explanation.

[0023] In order to clearly explain the present invention, parts not relevant to the description are omitted in the drawings, thicknesses are exaggerated to clearly show various layers and regions, and components having the same function within the same concept are denoted by the same reference numerals. Furthermore, throughout the specification, the term "comprises" a certain component does not mean that it excludes other components, but that it may further include other components, unless otherwise specified.

[0024] Figure 1 is a perspective view schematically illustrating the appearance of a multilayer capacitor according to an embodiment of the present invention. Figure 2 is a cross-sectional view taken along line I-I' of the multilayer capacitor of Figure 1. Figure 3 is a cross-sectional view taken along line II-II' of the multilayer capacitor of Figure 1. Figure 4 is an enlarged view of a portion of a dielectric layer and an internal electrode, and Figures 5 and 6 are graphs showing the Sn content in the dielectric layer and the internal electrode.

[0025] 1 to 3, a multilayer capacitor 100 according to an embodiment of the present invention includes a body 110 including a dielectric layer 111 and a plurality of internal electrodes 121 and 122 stacked on either side of the dielectric layer 111, and external electrodes 131 and 132. The plurality of dielectric layers 111 include a barium titanate-based composition containing Sn, and the internal electrodes 121 and 122 also contain Sn. At least one of the plurality of dielectric layers 111 has at least twice the Sn content of an adjacent one of the internal electrodes 121 and 122.

[0026] The body 110 has a laminated structure in which a plurality of dielectric layers 111 are stacked in a first direction (X direction). For example, the body 110 can be obtained by stacking and sintering a plurality of green sheets. Here, two directions perpendicular to the first direction (X direction) and perpendicular to each other are defined as a second direction (Y direction) and a third direction (Z direction), respectively. As shown in FIG. 1, the body 110 can have a shape similar to a rectangular parallelepiped. The dielectric layer 111 included in the body 110 can include a ceramic material having a high dielectric constant, such as a barium titanate (BaTiO3)-based composition. Specifically, the dielectric layer 111 can include a matrix main component containing Ba and Ti. Here, the matrix main component can include BaTiO3 or a main component partially solid-solubilized with Ca, Zr, etc., such as (Ba,Ca)(Ti,Ca)O3, (Ba,Ca)(Ti,Zr)O3, or Ba(Ti,Zr)O3. In addition to the ceramic material as the main component, the dielectric layer 111 may further include additives, organic solvents, plasticizers, binders, dispersants, etc., as needed. Furthermore, the barium titanate-based composition of the dielectric layers 111 may contain Sn, which may be added in the form of Sn oxide during the manufacture of the dielectric layers 111. The Sn component present in the dielectric layers 111 may strengthen the Schottky barrier of the grain boundary after firing and may also regulate the grain growth of the dielectric grains. This allows the dielectric layers 111 to have improved high-temperature reliability and withstand voltage characteristics, even when they are formed to a thin thickness.

[0027] The plurality of internal electrodes 121, 122 form capacitance and may be obtained, for example, by printing a paste containing a conductive metal to a predetermined thickness on one surface of a ceramic green sheet and then sintering the printed circuit board. In this case, the plurality of internal electrodes 121, 122 may include first and second internal electrodes 121, 122 exposed in a third direction (Z direction) facing each other of the body 110, as shown in FIG. 2. The first and second internal electrodes 121, 122 may be connected to different external electrodes 131, 132 and may have different polarities when driven, and may be electrically isolated from each other by a dielectric layer 111 disposed therebetween. However, the number of external electrodes 131, 132 and the manner of connection to the internal electrodes 121, 122 may vary depending on the embodiment.

[0028] Examples of main constituent materials of the internal electrodes 121 and 122 include nickel (Ni), copper (Cu), palladium (Pd), and silver (Ag), and alloys thereof may also be used. As described above, the internal electrodes 121 and 122 contain Sn. The Sn present in the internal electrodes 121 and 122 may form an alloy with other metals or exist as a single entity (e.g., an Sn layer). As described below, the Sn may diffuse and segregate at the interface between the internal electrodes 121 and 122 and the dielectric layer 111 to form a second Sn-rich region 221. The Sn-rich region 221 has a higher electrical resistance than the main component (e.g., Ni) of the internal electrodes 121 and 122, and therefore, when a DC voltage is applied, a larger voltage drop occurs than when the second Sn-rich region 221 is absent. This weakens the electric field within the dielectric layer 111, thereby improving the DC bias capacitance characteristics and reliability of the multilayer capacitor 100.

[0029] The external electrodes 131 and 132 may include first and second external electrodes 131 and 132 formed outside the main body 110 and connected to the first and second internal electrodes 121 and 122, respectively. The external electrodes 131 and 132 may be formed by, for example, preparing a paste from a material containing a conductive metal and then applying the paste to the main body 110. Examples of conductive metals include nickel (Ni), copper (Cu), palladium (Pd), gold (Au), or alloys thereof. Here, the external electrodes 131 and 132 may further include a plating layer containing Ni, Sn, etc.

[0030] In this embodiment, the internal electrodes 121, 122 have a lower Sn content than the adjacent dielectric layers 111. Specifically, at least one of the plurality of dielectric layers 111 has a Sn content that is at least twice as high as that of the adjacent internal electrodes 121, 122. This configuration can be obtained, for example, when Sn components are added to the dielectric layers 111 during the manufacturing process and the added Sn components diffuse into the internal electrodes 121, 122. In this case, most of the Sn components present in the internal electrodes 121, 122 may originate from the dielectric layers 111. This will be described in detail with reference to FIGS. 4 to 6.

[0031] As shown in FIG. 4 , the dielectric layer 111 includes a first Sn-rich region 211 formed at the interface with the internal electrodes 121 and 122. The internal electrodes 121 and 122 include a second Sn-rich region 221 formed at the interface with the dielectric layer 111. The first and second Sn-rich regions 211 and 221 correspond to regions where the Sn content is locally high due to diffusion of Sn components added to the dielectric layer 111, and the sum of their thicknesses t1 and t2 may be 5 nm or less. In this case, the first Sn-rich region 211 may be thicker than the second Sn-rich region 221 (t1 > t2). Research by the present inventors has shown that when Sn components diffuse from the internal electrodes 121 and 122 to the dielectric layer 111, the Sn content in the dielectric layer 111 is insufficient, and the Sn-rich region present in the dielectric layer 111 tends to account for less than 20% of the total Sn-rich region thickness. In this embodiment, the Sn content of the dielectric layer 111 is at least twice that of the internal electrodes 121 and 122, so that the Sn component can be sufficiently secured. However, depending on the embodiment, the Sn content of the dielectric layer 111 does not necessarily need to be at least twice that of the internal electrodes 121 and 122. In this case, the sum of the thicknesses t1 and t2 of the first and second Sn-rich regions 211 and 221 can be adjusted to 5 nm or less. Under these thickness conditions, high-temperature reliability and withstand voltage characteristics can be secured without significantly degrading the electrical characteristics of the dielectric layer 111 and the internal electrodes 121 and 122.

[0032] The above-described thickness conditions of the first and second Sn-rich regions 211 and 221 can be achieved, for example, by causing the Sn component to originate from the dielectric layer 111 and adjusting the firing conditions. For example, when the firing atmosphere is strong, i.e., when the oxygen partial pressure is low, Sn oxide is reduced, and the amount of Sn component diffusing from the dielectric layer 111 to the internal electrodes 121 and 122 increases, thereby increasing the thickness of the second Sn-rich region 221. In this manner, the overall thickness of the first and second Sn-rich regions 211 and 221 and the ratio of each thickness can be adjusted.

[0033] The sum of the Sn contents of the first and second Sn-rich regions 211 and 221 is 0.8 moles or more relative to 100 moles of Ti in the dielectric layer 111. In this case, a sufficient amount of Sn may be present in the dielectric layer 111 and the internal electrodes 121 and 122 to further improve high-temperature reliability and withstand voltage characteristics. The Sn content of the first Sn-rich region 211 may be greater than the Sn content of the remaining regions of the dielectric layer 111 excluding the first Sn-rich region 211, meaning that a large amount of Sn is present in the first Sn-rich region 211. The Sn content of the second Sn-rich region 221 may be greater than the Sn content of the remaining regions of the internal electrodes 121 and 122 excluding the second Sn-rich region 221, and since a sufficient Sn content is ensured in the second Sn-rich region 221, withstand voltage characteristics can be improved.

[0034] An example of a method for measuring the content of each element in the dielectric layer 111 and the internal electrodes 121 and 122 will be described. A thin-sectioned analysis sample is prepared from a region of a cross section of the sintered body 110, including the dielectric layer 111 and the internal electrodes 121 and 122, using a focused ion beam (FIB) device. The surface damage layer of the thin-sectioned sample is then removed using Ar ion milling, and the image obtained using STEM-EDX is used to map and quantitatively analyze each component. The quantitative analysis graph for each component is obtained in terms of the mass fraction of each element, but this can also be converted to a molar fraction. FIGS. 5 and 6 show the Sn content in the dielectric layer 111 and the internal electrode 121 in the form of a line profile. While FIGS. 5 and 6 show the Sn content in the first internal electrode 121 and the dielectric layer 111, a similar line profile can also be obtained from the interface between the second internal electrode 122 and the dielectric layer 111.

[0035] 5, the first Sn-rich region 211 may have a Sn content that decreases from the interface B between the dielectric layer 111 and the internal electrode 121 toward the center of the dielectric layer 111. Similarly, the second Sn-rich region 221 may have a Sn content that decreases from the interface B toward the center of the internal electrode 121. Furthermore, at the interface B between the dielectric layer 111 and the internal electrode 121, the first and second Sn-rich regions 211 and 221 may have the same Sn content.

[0036] Meanwhile, the ranges of the first and second Sn-rich regions 211 and 221 may be determined taking into consideration the Sn content in the dielectric layer 111 and the central regions of the internal electrodes 121 and 122, respectively. For example, the first Sn-rich region 211 may be defined as the region from the interface B to a region A1 where a Sn content equal to the Sn content in the central region of the dielectric layer 111 first appears. In this regard, considering that the Sn content outside the first Sn-rich region 211 is relatively low and subject to significant variation due to noise, the Sn content in the central region of the dielectric layer 111 may be calculated as an average value in a section C1 from the interface B to ¼ to ½ of the thickness of the dielectric layer 111 in the thickness direction. In a similar manner, the second Sn-rich region 221 may be defined as the region from the interface B to a region A2 where a Sn content equal to the Sn content in the central region of the internal electrode 121 first appears. In this case, taking into consideration that the Sn content outside the second Sn-rich region 221 is relatively low and that the degree of variation due to noise and the like is large, the Sn content in the central region of the internal electrode 121 can be calculated as the average value in a section C2 from the interface B to 1 / 4 to 1 / 2 of the thickness of the internal electrode 121 based on the thickness direction. In addition to this method, the first and second Sn-rich regions 211, 221 may be defined by a simpler method, for example, from the interface B to a region where the Sn content decreases and then starts to increase.

[0037] Meanwhile, while the graph of Fig. 5 shows a configuration in which the first Sn-rich region 211 is thicker than the second Sn-rich region 221, this structure is not necessarily the only one that can be used. Depending on the embodiment, as shown in the graph of Fig. 6, the second Sn-rich region 221 may be thicker than the first Sn-rich region 211. Increasing the thickness of the second Sn-rich region 221 can improve the electrical insulation at the interface between the internal electrode 121 and the dielectric layer 111. The Sn content distribution of Fig. 6 can be obtained, for example, by reducing the oxygen partial pressure during firing to allow the Sn component to diffuse more into the internal electrode 121.

[0038] Meanwhile, the improved effects of the above-described structure, such as improved withstand voltage characteristics, can be more pronounced when the dielectric layer 111 and the internal electrodes 121 and 122 are thinner than conventional ones. The thickness of the dielectric layer 111 may be 500 nm or less, and the thickness of the internal electrodes 121 and 122 may be 400 nm or less. Here, the thickness of the dielectric layer 111 may refer to the average thickness of the dielectric layer 111 disposed between the internal electrodes 121 and 122. As an example of a measurement standard, the average thickness of the dielectric layer 111 can be measured by scanning the cross sections of the main body 110 in the first direction (X direction) and the third direction (Z direction) using a scanning electron microscope (SEM). For example, the thicknesses of any dielectric layer extracted from the images scanned by the scanning electron microscope (SEM) of the cross sections of the main body 110 in the first and third directions cut at the center of the second direction (Y direction) of the main body 110 can be measured at 30 equally spaced points in the third direction, and the average thickness can be calculated. The thickness measured at the 30 equally spaced points may be measured at a capacitance forming portion, which means a region where the internal electrodes 121 and 122 overlap each other.

[0039] Similarly, the thickness of the internal electrodes 121 and 122 may refer to an average thickness. In this case, the average thickness of the internal electrodes 121 and 122 may be measured by scanning an image of a cross section of the body 110 in the first direction (X direction) and the third direction (Z direction) using a scanning electron microscope (SEM). For example, the thickness of any internal electrode 121 or 122 extracted from an image obtained by scanning a cross section of the body 110 in the first and third directions cut at the center of the second direction (Y direction) using a scanning electron microscope (SEM) may be measured at 30 equally spaced points in the third direction, and the average thickness may be calculated. The 30 equally spaced points may be measured at a capacitance-forming portion, which is a region where the internal electrodes 121 and 122 overlap each other.

[0040] Although the embodiments of the present invention have been described in detail above, the present invention is not limited to the above-described embodiments and the accompanying drawings, but is limited by the appended claims. Therefore, it will be apparent to those skilled in the art that various substitutions, modifications, and changes can be made without departing from the technical idea of ​​the present invention as defined in the appended claims, and these also fall within the technical idea as defined in the appended claims. According to this specification, the following items are also disclosed. [Item 1] a main body including a plurality of dielectric layers and a plurality of internal electrodes stacked with the dielectric layers sandwiched therebetween; an external electrode formed outside the body and connected to the plurality of internal electrodes, The plurality of dielectric layers include a barium titanate-based composition containing a Sn component, the plurality of internal electrodes contain an Sn component, At least one of the plurality of dielectric layers has an Sn content that is at least twice as high as that of an adjacent one of the plurality of internal electrodes. [Item 2] the dielectric layer includes a first Sn-rich region formed at an interface with the internal electrode, 2. The multilayer capacitor according to item 1, wherein the internal electrode includes a second Sn-rich region formed at the interface with the dielectric layer. [Item 3] 3. The multilayer capacitor according to item 2, wherein the sum of the thicknesses of the first Sn-rich region and the second Sn-rich region is 5 nm or less. [Item 4] 4. The multilayer capacitor according to item 2 or 3, wherein the first Sn-rich region is thicker than the second Sn-rich region. [Item 5] 4. The multilayer capacitor according to item 2 or 3, wherein the second Sn-rich region is thicker than the first Sn-rich region. [Item 6] 6. The multilayer capacitor according to any one of items 2 to 5, wherein the sum of the Sn contents contained in the first Sn-rich region and the second Sn-rich region is 0.8 mol or more per 100 mol of Ti content in the dielectric layer. [Item 7] 7. The multilayer capacitor according to any one of items 2 to 6, wherein the Sn content in the first Sn-rich region is higher than the Sn content in the remaining region of the dielectric layer excluding the first Sn-rich region. [Item 8] 8. The multilayer capacitor according to any one of items 2 to 7, wherein the Sn content in the second Sn-rich region is higher than the Sn content in the remaining region of the internal electrode excluding the second Sn-rich region. [Item 9] 9. The multilayer capacitor according to any one of items 2 to 8, wherein the first Sn-rich region has a Sn content that decreases from the interface toward the center of the dielectric layer. [Item 10] 10. The multilayer capacitor according to any one of items 2 to 9, wherein the second Sn-rich region has a Sn content that decreases from the interface toward the center of the internal electrode. [Item 11] 11. The multilayer capacitor according to any one of items 2 to 10, wherein the first Sn-rich region and the second Sn-rich region at the interface have the same Sn content. [Item 12] 12. The multilayer capacitor according to any one of items 1 to 11, wherein the average thickness of the plurality of dielectric layers is 500 nm or less. [Item 13] 13. The multilayer capacitor according to any one of items 1 to 12, wherein the average thickness of the plurality of internal electrodes is 400 nm or less. [Item 14] a main body including a plurality of dielectric layers and a plurality of internal electrodes stacked with the dielectric layers sandwiched therebetween; an external electrode formed outside the body and connected to the plurality of internal electrodes, the plurality of dielectric layers include a barium titanate-based composition containing Sn, the plurality of internal electrodes contain Sn, the dielectric layer includes a first Sn-rich region formed at an interface with the internal electrode, the internal electrode includes a second Sn-rich region formed at an interface with the dielectric layer, The multilayer capacitor has a sum of the thicknesses of the first Sn-rich region and the second Sn-rich region of 5 nm or less. [Item 15] Item 15. The stacked capacitor according to item 14, wherein the first Sn-rich region is thicker than the second Sn-rich region. [Item 16] Item 15. The stacked capacitor according to item 14, wherein the second Sn-rich region is thicker than the first Sn-rich region. [Explanation of symbols]

[0041] 100 Multilayer Capacitor 110 Main Unit 111 Dielectric layer 121, 122 Internal electrode 131, 132 External electrode 211, 221 Sn-rich region

Claims

1. a main body including a plurality of dielectric layers and a plurality of internal electrodes stacked with the dielectric layers sandwiched therebetween; an external electrode formed outside the body and connected to the plurality of internal electrodes, The plurality of dielectric layers include a barium titanate-based composition containing a Sn component, the plurality of internal electrodes contain an Sn component, At least one of the plurality of dielectric layers has a Sn content that is at least twice as high as that of an adjacent one of the plurality of internal electrodes.

2. the dielectric layer includes a first Sn-rich region formed at an interface with the internal electrode, the internal electrode includes a second Sn-rich region formed at an interface with the dielectric layer, a content of Sn contained in the first Sn-rich region is greater than a content of Sn contained in the remaining region of the dielectric layer excluding the first Sn-rich region; 2. The multilayer capacitor of claim 1, wherein the Sn content in the second Sn-rich region is greater than the Sn content in the remaining region of the internal electrode excluding the second Sn-rich region.

3. 3. The multilayer capacitor according to claim 2, wherein the sum of the thicknesses of the first Sn-rich region and the second Sn-rich region is 5 nm or less.

4. 4. The multilayer capacitor according to claim 2, wherein the first Sn-rich region is thicker than the second Sn-rich region.

5. 4. The multilayer capacitor according to claim 2, wherein the second Sn-rich region is thicker than the first Sn-rich region.

6. 6. The multilayer capacitor according to claim 2, wherein the sum of the Sn contents of the first Sn-rich region and the second Sn-rich region is 0.8 mol or more relative to 100 mol of Ti content of the dielectric layer.

7. The multilayer capacitor of claim 2 , wherein the first Sn-rich region has a Sn content that decreases from the interface toward the center of the dielectric layer.

8. The multilayer capacitor of claim 2 , wherein the second Sn-rich region has a Sn content that decreases from the interface toward the center of the internal electrode.

9. The multilayer capacitor of claim 2 , wherein the first Sn-rich region and the second Sn-rich region at the interface have the same Sn content.

10. 10. The multilayer capacitor according to claim 1, wherein the average thickness of the plurality of dielectric layers is 500 nm or less.

11. 10. The multilayer capacitor according to claim 1, wherein the average thickness of the plurality of internal electrodes is 400 nm or less.

12. a main body including a plurality of dielectric layers and a plurality of internal electrodes stacked with the dielectric layers sandwiched therebetween; an external electrode formed outside the body and connected to the plurality of internal electrodes, The plurality of dielectric layers include a barium titanate-based composition containing Sn, the plurality of internal electrodes contain Sn, the dielectric layer includes a first Sn-rich region formed at an interface with the internal electrode, the internal electrode includes a second Sn-rich region formed at an interface with the dielectric layer, a content of Sn contained in the first Sn-rich region is greater than a content of Sn contained in the remaining region of the dielectric layer excluding the first Sn-rich region; The content of Sn contained in the second Sn-rich region is greater than the content of Sn contained in the remaining region of the internal electrode excluding the second Sn-rich region; The sum of the thicknesses of the first Sn-rich region and the second Sn-rich region is 5 nm or less.

13. 13. The stacked capacitor of claim 12, wherein the first Sn-rich region is thicker than the second Sn-rich region.

14. 13. The stacked capacitor of claim 12, wherein the second Sn-rich region is thicker than the first Sn-rich region.

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