Plasma source and plasma processing device

Abstract

To effectively suppress the generation of a particle.SOLUTION: A plasma source comprises: a metal member in which a supply port is formed, and which constructs a wall for defining a flow of an upstream of a processing gas to be supplied from the supply port; a ceramic member in which an exhaust port is formed, and which constructs the wall for defining a flow of a downstream of the processing gas to be exhausted from the exhaust port; and a power supply part that supplies power for generating plasma into a chamber. The chamber is constructed by the metal member and the ceramic member, and is constructed so as to exhaust an activation gas generated by making the processing gas into plasma to an external part of the chamber from the exhaust port.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present disclosure relates to plasma sources and plasma processing apparatus. [Background technology]

[0002] There is a plasma processing method in which reactive species of gas are supplied from a remote plasma source to a reactor, and wafer processing or cleaning of the inside of the reactor is performed in the reactor. For example, Patent Document 1 discloses a method in which reactive species of fluorine-containing gas are supplied to the reactor from a remote plasma source installed in the reactor of a substrate processing apparatus, and the inside of the reactor is cleaned. The inner wall through which reactive species of fluorine-containing gas are supplied from the remote plasma source to the reactor is coated with a fluororesin, which reduces damage to the inner wall caused by the fluorine-containing gas and suppresses the generation of particles. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2004-179426 Summary of the Invention [Problem to be solved by the invention]

[0004] The present disclosure provides a technique that can effectively suppress particle generation. [Means for solving the problem]

[0005] According to one aspect of the present disclosure, there is provided a chamber having a metal member formed with a supply port and constituting a wall that defines an upstream flow of the processing gas supplied from the supply port, a ceramic member formed with an exhaust port and constituting a wall that defines a downstream flow of the processing gas discharged from the exhaust port, and a power supply unit that supplies power for generating plasma into the chamber, wherein the chamber is composed of the metal member and the ceramic member, and is configured to discharge an activated gas generated by converting the processing gas into plasma to the outside of the chamber through the exhaust port. The metal member and the ceramic member are brazed to each other via a stress buffer material. , a plasma source is provided. [Effects of the Invention]

[0006] According to one aspect, generation of particles can be effectively suppressed. [Brief explanation of the drawings]

[0007] [Figure 1] FIG. 1 is a diagram showing a first example of the configuration of a plasma source according to an embodiment and a first example of the configuration of a plasma processing apparatus. [Figure 2] FIG. 2 shows a configuration example a of a conventional plasma source. [Figure 3] FIG. 3 is a diagram showing a modified example of the stress buffer according to the embodiment. [Figure 4] FIG. 4(a) shows a configuration example b of a conventional plasma source, and FIG. 4(b) shows a configuration example 2 of a plasma source according to the embodiment. [Figure 5] FIG. 5 is a diagram showing a third configuration example of a plasma source according to an embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0008] Hereinafter, embodiments of the present disclosure will be described with reference to the drawings. In the drawings, the same components are denoted by the same reference numerals, and redundant explanations may be omitted.

[0009] For example, there is a plasma processing method in which a reactive species (activated gas) of a fluorine-containing gas such as NF3 gas is supplied from a remote plasma source (hereinafter also referred to as a plasma source) to a reactor to clean the inside of the reactor or process a substrate, such as a wafer, with the processing gas. In such a plasma processing method, fluorination progresses due to heat generation in areas where the fluorine-containing gas stagnates, such as bent parts of the plasma source piping, and the piping and inner walls near the activated gas outlet. In conventional plasma sources, for example, aluminum constituting the chamber wall is fluorinated to form AlF (aluminum fluoride), which can peel off from the wall and become particles.

[0010] If the chamber inner wall is subjected to a surface treatment such as anodizing (anodic oxidation) to form an alumina (Al2O3) film, or if an oxide film such as yttria (Y2O3) is formed, fluorination of the chamber wall can be suppressed and particles can be reduced. However, the oxide film can also be damaged and scraped away, or cracks can occur, allowing fluorine-containing gas to reach the aluminum that makes up the chamber wall. As a result, chips and AlF generated from the chamber inner wall can become particles and fall into the reactor.

[0011] Therefore, in the plasma source according to the present embodiment, instead of the conventional surface treatment using an oxide film of alumina or yttria, the easily fluorinated portions of the chamber, such as the vicinity of the outlet for the reactive species (activated gas), are constructed of sintered yttria. In other words, the chamber wall downstream of the easily fluorinated gas, which is likely to occur due to the longer residence time or higher gas density of the gas supplied into the chamber from the supply port for the plasma source, is constructed of sintered yttria. This increases the durability of the chamber wall. This prevents fluorine components from penetrating the easily fluorinated portions of the chamber, suppresses particle generation from the chamber wall due to damage, and prevents particles from falling from the plasma source into the reactor. Below, a first configuration example of the plasma source according to the present embodiment and a plasma processing apparatus are described in detail with reference to FIG. 1 .

[0012] [Configuration Example 1 of Plasma Source and Plasma Processing Apparatus] 1 shows a first configuration example of a plasma source 2 according to an embodiment and a configuration example of a plasma processing apparatus 1 including the plasma source 2. The plasma source 2 has a chamber 36 and a power supply unit 37. The chamber 36 is composed of a metal member 30 and a ceramic member 31. Note that in FIG. 1, the size relationship between the plasma source 2 and the reactor 10 is ignored.

[0013] (Chamber structure) The metal member 30 is made of a metal such as aluminum, has a substantially cylindrical shape, and its interior forms a plasma generation space 30s. The top of the metal member 30 is closed, and the bottom is open. A processing gas supply port 28 is formed in the approximate center of the top of the metal member 30. The supply port 28 is connected to the gas supply unit 24 via an on-off valve 29. The metal member 30 forms a wall that defines the upstream flow of the processing gas supplied from the supply port 28. The processing gas is supplied from the gas supply unit 24, and the supply and stop of the supply is controlled by the on-off valve 29, and is introduced into the interior of the metal member 30 from the supply port 28. The processing gas includes a cleaning gas, a film-forming gas, an etching gas, etc.

[0014] The power supply unit 37 supplies power for generating plasma into the chamber 36. The power for generating plasma can be radio frequency (RF) power, such as 400 kHz or 13.56 MHz. The power supply unit 37 is connected to a coil 33 wound around the metal member 30 and applies RF power to the coil 33. A gap is provided in the circumferential direction in the side wall of the metal member 30 at the height where the coil 33 is disposed, and an annular dielectric window 32 is fitted into the gap. The electromagnetic field formed by applying RF power to the coil 33 passes through the dielectric window 32 and propagates into the plasma generation space 30s within the metal member 30, contributing to generating plasma from the gas.

[0015] As a result, plasma of the processing gas is generated in the plasma generating space 30s. The inner wall of the metal member 30 is coated with a thermally sprayed yttria film 30a. The inner wall of the metal member 30 may be subjected to PEO (plasma electric field oxidation) treatment. Either treatment can improve plasma resistance.

[0016] The chamber 36 of the plasma source 2 of this embodiment is mainly composed of two members: a metal member 30 that defines the upstream flow of the processing gas, and a ceramic member 31 that defines the downstream flow. That is, the ceramic member 31 has an outlet 27 formed therein, and forms a wall that defines the downstream flow of the processing gas (activated gas) discharged from the outlet 27. In the plasma source 2 of this embodiment, the ceramic member 31 is made of an yttria sintered body.

[0017] A configuration example a of a conventional plasma source 102 is shown in FIG. 2. In the configuration example a of the conventional plasma source 102, a process gas is introduced through a supply port 128 at the top of a chamber 136 made of aluminum, and plasma is generated in a plasma generation space 30s. Due to a long gas residence time or a high gas density, fluorine components penetrate into the aluminum chamber wall near the outlet 127 downstream of the gas, which is prone to fluorination (e.g., region A), causing particle generation. Similarly, even when a ceramic coating is formed on the inner wall surface of the chamber 136 by thermal spraying, fluorine components penetrate into the ceramic coating in region A, for example, causing particle generation.

[0018] 1, the wall defining the downstream flow of the processing gas near the outlet 27 is made of a sintered body of yttria. That is, the chamber 36 of the present disclosure is mainly composed of a ceramic member 31 made of a sintered body of yttria and a metal member 30 made of aluminum.

[0019] As a result, only the outlet 27 and its downstream side in the process gas flow, where the gas residence time is long and the gas density is high, are made of yttria sintered body, improving durability against fluorine. In other words, by constructing the ceramic member 31 from a sintered body that is denser than thermal sprayed ceramic rather than ceramic formed by thermal spraying, durability against fluorine is further improved. However, because yttria has poor thermal conductivity, it is preferable to place the yttria sintered ceramic member 31 only in the part of the chamber 36 where the gas stagnates. The supply port 28 and its upstream side in the process gas flow and the intermediate portion between the upstream and downstream sides are constructed of aluminum metal member 30.

[0020] With this configuration, the chamber 36 is made up of the metal member 30 and the ceramic member 31, and is configured so that the activated gas generated by converting the processing gas into plasma is discharged to the outside of the chamber 36 through the exhaust port 27. This makes it possible to prevent the chamber wall from being fluorinated downstream of the gas, thereby preventing the generation of particles, and also makes it possible to provide a structure in which the chamber 36 can be easily cooled by improving thermal conductivity with the metal member 30.

[0021] Because yttria is plasma resistant, the inner wall of the ceramic member 31 can be left as an exposed yttria sintered body. On the other hand, a metal vapor-deposited film 31b must be formed on the outer wall of the ceramic member 31. Because the ceramic member 31 is a dielectric, without the vapor-deposited film 31b, electromagnetic waves propagating through the plasma generation space 30s would penetrate to the atmosphere outside the chamber 36. To prevent this, a metal such as aluminum, chromium, nickel, or tantalum is vapor-deposited on the outer wall of the ceramic member 31. The vapor-deposited film 31b prevents electromagnetic waves from leaking.

[0022] Note that alumina (Al2O3) sintered body, yttrium fluoride (YF3) sintered body, magnesium fluoride (MgF) sintered body, or calcium fluoride (CaF) sintered body can be used instead of yttria sintered body for the ceramic member 31. However, since alumina sintered body, magnesium fluoride sintered body, and calcium fluoride sintered body have lower resistance to fluorine plasma than yttria sintered body, it is preferable to use yttria sintered body for the ceramic member 31.

[0023] Furthermore, the metal member 30 is not limited to aluminum, and may be made of any material that can be subjected to fluoride plasma treatment on the surface.

[0024] It is also possible to form the entire chamber 36 from an yttria sintered body. In this case, a metal vapor deposition film 31b is applied to the entire outer wall of the ceramic member 31, excluding the dielectric window 32. However, if the entire chamber 36 is formed from ceramics such as an yttria sintered body, the manufacturing cost of the plasma source 2 becomes high, and problems with cooling efficiency arise from the standpoint of thermal conductivity. Therefore, it is preferable to limit the locations where the ceramic member 31 is used to a certain extent.

[0025] In the chamber 36, fluorine components are likely to enter portions where the density of the fluorine-containing gas is high or the flow rate of the fluorine-containing gas is low, such as portions where the gas flow path is narrow or where gas accumulation occurs. For this reason, it is preferable to provide at least the ceramic member 31 in such portions where fluorine components are likely to enter.

[0026] (stress buffer material) The metal member 30 and the ceramic member 31 are brazed together via a stress buffer material 34. Directly joining the metal member 30 and the ceramic member 31 may result in cracks at the joint between the metal member 30 and the ceramic member 31 or in the ceramic member 31 due to differences in thermal expansion caused by temperature fluctuations within the chamber 36. If cracks occur, fluorine components may enter the cracks, corroding the joint and generating particles. For this reason, instead of directly joining the metal member 30 and the ceramic member 31, an annular stress buffer material 34 is interposed between the metal member 30 and the ceramic member 31. The stress buffer material 34 is brazed circumferentially to the outer wall near the lower end of the metal member 30 and the inner wall near the upper end of the ceramic member 31. For example, an active metal brazing material made of a mixture of titanium and silver can be used for brazing. Metallization can be used to join the stress buffer material 34 to the yttria sintered ceramic member 31.

[0027] The stress buffer material 34 is preferably a material having a thermal expansion coefficient intermediate between that of the metal member 30 and that of the ceramic member 31. For example, the stress buffer material 34 is preferably a nickel-based metal having a composition of 29% Ni, 17% Co, and the remainder Fe. Kovar (registered trademark) may be used as an example of such a metal. The stress buffer material 34 can absorb stress caused by the difference in thermal expansion between the metal member 30 and the ceramic member 31, thereby preventing cracks from occurring in the metal member 30 or the ceramic member 31. However, the stress buffer material 34 may be any material having a linear thermal expansion coefficient equal to or greater than that of the ceramic member 31 and equal to or less than that of the metal member 30.

[0028] 1, the stress buffer 34 is configured by a hollow spring-like member having a U-shaped cross-section and an opening 34a, which opens in the same direction as either the supply port 28 or the discharge port 27.

[0029] The configuration of the stress buffer 34 in FIG. 1 is just one example, and the stress buffer 34 may be a plate-like member as shown in FIG. 3, which shows a modified example of the stress buffer 34, as long as the configuration does not apply load to the ceramic member 31 and the joint portion.

[0030] (Plasma processing equipment) Returning to FIG. 1 , the plasma processing apparatus 1 includes a plasma source 2 and a reactor 10. The connecting portion 38 has an outlet 27 for the plasma source 2 formed therein and is fitted into a hole in the upper wall of the reactor 10. This allows the plasma source 2 to stand upright. The plasma source 2 converts the processing gas into plasma, and the generated activated gas is discharged from the outlet 27 to the chamber 36 and supplied into the reactor 10. The outlet 27 and its vicinity, where the gas conductance and residence time increase, are made of a ceramic member 31 made of yttria sintered body to improve corrosion resistance. This prevents the fluorine-containing gas from entering the yttria sintered body, even when a fluorine-containing gas is used for cleaning, thereby suppressing particle generation and particle fall into the reactor 10. Although not shown, it is preferable to provide a valve in the connecting portion 38 to prevent gas backflow and reduce the volume of the reactor 10.

[0031] The reactor 10 includes a chamber body 12. The chamber body 12 has a generally cylindrical shape, provides the side walls and bottom wall of the reactor 10, and is open at the top. The chamber body 12 is made of a metal such as aluminum and is grounded.

[0032] The sidewall of the chamber body 12 provides a passage 12p. The substrate W passes through the passage 12p when being transferred between the inside and outside of the reactor 10. The passage 12p can be opened and closed by a gate valve 12v. The gate valve 12v is provided along the sidewall of the chamber body 12.

[0033] The reactor 10 further includes an upper wall 14, which is made of a metal such as aluminum. The upper wall 14 is generally disk-shaped and closes the opening at the top of the chamber body 12. The upper wall 14 is grounded.

[0034] The bottom wall of the reactor 10 provides an exhaust port 16a, which is connected to an exhaust system 16. The exhaust system 16 includes a pressure controller, such as an automatic pressure control valve, and a vacuum pump, such as a turbomolecular pump.

[0035] The plasma processing apparatus 1 further includes a substrate support 18. The substrate support 18 is provided in the reactor 10. The substrate support 18 is configured to support a substrate W placed thereon. The substrate W is placed on the substrate support 18 in a substantially horizontal state. The substrate support 18 may be supported by a support member 19. The support member 19 extends upward from the bottom of the reactor 10. The substrate support 18 and the support member 19 may be formed from a dielectric material such as aluminum nitride.

[0036] The plasma processing apparatus 1 further includes a showerhead 20. The showerhead 20 is made of a metal such as aluminum. The showerhead 20 has a substantially disk shape, and provides a diffusion chamber 30d therein. The showerhead 20 is provided above the substrate support 18 and below the upper wall 14. The showerhead 20 forms a ceiling portion that defines the internal space of the reactor 10, and the upper wall 14 is provided above the showerhead 20.

[0037] A plurality of gas holes 20i are formed vertically penetrating from the diffusion chamber 30d, and the plurality of gas holes 20i open to the lower surface of the shower head 20 and introduce gas toward the processing space 30e between the shower head 20 and the substrate support 18 in the reactor 10. As a result, the shower head 20 introduces the activated gas supplied from the plasma source 2 from the diffusion chamber 30d through the plurality of gas holes 20i into the processing space 30e.

[0038] The periphery of the showerhead 20 is covered with a dielectric member 13 such as ceramic. The periphery of the substrate support 18 is covered with a dielectric member 15 such as ceramic. If no high frequency is applied to the showerhead 20, the dielectric member 13 is not necessary. However, it is preferable to place the dielectric member 13 in order to define the area of ​​the showerhead 20 that functions as a counter electrode for the substrate support 18. It is also preferable to place the dielectric member 13 in order to make the ratio of anodes to cathodes of the electrodes as equal as possible.

[0039] A high frequency power supply 60 is connected to the substrate support 18 via a matching device 61. The matching device 61 has an impedance matching circuit. The impedance matching circuit is configured to match the output impedance of the high frequency power supply 60 with the load impedance on the plasma side. The frequency of the high frequency power supplied from the high frequency power supply 60 is 60 MHz or less. An example of the high frequency frequency is 13.56 MHz. The high frequency power supply 60 may apply a high frequency to the showerhead 20.

[0040] In the plasma processing apparatus 1 having such a configuration, the reactor 10 is connected to the chamber 36, and an activated gas is introduced through the exhaust port 27. The activated gas is supplied to the processing space 30e through the inlet 13a of the shower head 20 and the diffusion chamber 30d. The activated gas that reaches the processing space 30e is easily re-dissociated by high-frequency power from the high-frequency power supply 60, allowing the substrate W to be processed using the activated gas. Note that the activated gas may be directly supplied to the processing space 30e without providing the high-frequency power supply 60.

[0041] The control unit (control device) 90 may be a computer having a processor 91 and a memory 92. The control unit 90 includes an arithmetic unit, a storage unit, an input device, a display device, a signal input / output interface, and the like. The control unit 90 controls each component of the plasma processing apparatus 1, including the plasma source 2. The control unit 90 allows an operator to input commands and other operations to manage the plasma processing apparatus 1 using the input device. The control unit 90 also uses a display device to visualize and display the operating status of the plasma processing apparatus 1. Furthermore, the memory 92 of the control unit 90 stores a control program and recipe data. The control program is executed by the processor 91 of the control unit 90 to perform various processes in the plasma processing apparatus 1. The processor 91 executes the control program and controls each component of the plasma processing apparatus 1 according to the recipe data. This allows the plasma processing apparatus 1 to perform various plasma processes, such as cleaning processes, film formation processes, and etching processes, using fluorine-containing gases such as NF3 gas and ClF3 gas.

[0042] [Other examples of plasma source configurations] Other configuration examples of the plasma source 2 will be described with reference to Fig. 4 and Fig. 5. Fig. 4(a) shows configuration example b of the conventional plasma source 102, and Fig. 4(b) shows configuration example 2 of the plasma source 2 according to the embodiment. Fig. 5 shows configuration example 3 of the plasma source 2 according to the embodiment.

[0043] In the configuration example b of the conventional plasma source 102 in Figure 4(a), a process gas is introduced through a supply port 128 in the upper wall of a chamber 136 made of aluminum. The chamber 136 is configured to form multiple plasma generation flow paths R1, R2 that branch off from the supply port 128. The plasma generation flow paths R1, R2 branch off from the upstream side of the gas flow, and the gas flows through a branched annular gas flow path or two or more gas flow paths before joining together downstream.

[0044] In the configuration example b of the conventional plasma source 102, the chamber 136 is configured to have an atmospheric space 30p inside the plasma generation space 30s. High-frequency power is applied to multiple coils 33a, 33b wound around the chamber 136. The high-frequency power applied to the coils 33a, 33b passes through the dielectric windows 32a, 32b and is supplied to the plasma generation space 30s in the chamber 136, converting the processing gas into plasma.

[0045] In the vicinity of the exhaust port 127 downstream of the gas that is easily fluorinated due to a longer residence time of the gas supplied from the supply port 128 or a higher gas density (e.g., region A), fluorine components penetrate into the aluminum wall of the chamber 136, causing the generation of particles.

[0046] 4(b), the chamber 36 is configured from a ceramic member 31 made of yttria sintered body and a metal member 30 made of aluminum. The ceramic member 31, which defines the downstream flow of the processing gas supplied from the supply port 28 and discharged from the discharge port 27, is configured from the yttria sintered body. This prevents fluorine components from penetrating the dense yttria sintered body, thereby suppressing the generation of particles.

[0047] The chamber 36 is configured to have an atmospheric space 30p inside the plasma generation space 30s. The ceramic member 31 is configured to form at least the confluence of the multiple plasma generation flow paths R1, R2. Stress buffer materials 34, 35 are provided between the ceramic member 31 and each of the multiple plasma generation flow paths R1, R2. The stress buffer materials 34, 35 are configured to be brazed to the outer wall of the metal member 30 and the inner wall of the ceramic member 31 in the multiple plasma generation flow paths R1, R2.

[0048] In the configuration example 3 of the plasma source 2 of this embodiment shown in Figure 5, the chamber 36 of the present disclosure is composed of a metal member 30 made of aluminum and a ceramic member 31 made of sintered yttria. The configuration of the metal member 30 is the same as that of the configuration example 2 of the plasma source 2 shown in Figure 4(b). Also, like the configuration example 2, the ceramic member 31 that defines the downstream flow of the processing gas discharged from the exhaust port 27 is made of sintered yttria. This makes it possible to suppress the generation of particles.

[0049] The plasma generating space 30s has an atmospheric space 30p therein, and the ceramic member 31 is configured to form at least a confluence of the plurality of plasma generating flow paths R1, R2. Stress buffer materials 34, 35 are provided between the plurality of plasma generating flow paths R1, R2 and the ceramic member 31. The stress buffer materials 34, 35 are configured to be brazed to the metal member 30 and the ceramic member 31 in the plurality of plasma generating flow paths R1, R2.

[0050] 4(b) is that the ceramic member 31 has multiple plasma generation flow channels R3 and R4 formed at an angle so that the longitudinal cross section of the ceramic member 31 has a Y-shape, and these channels are connected to the plasma generation flow channels R1 and R2, respectively. By forming the plasma generation flow channels R3 and R4 at an angle, steps and corners within the flow channels are reduced, improving the gas flow and creating a structure in which turbulence and convection are less likely to occur near the outlet 27. This further reduces the cause of deterioration of the ceramic member 31 due to fluorine components and further suppresses particle generation.

[0051] 4(b) is that the stress buffers 34, 35 are configured to be brazed to the lower end of the metal member 30 and the upper end of the ceramic member 31. In this case, the openings 34a, 35a of the stress buffers 34, 35 are opened in a direction perpendicular to the opening direction of the supply port 28 and the exhaust port 27. However, the present invention is not limited to this, and the openings 34a, 35a of the stress buffers 34, 35 may be opened at an angle to the opening direction of the supply port 28 and the exhaust port 27.

[0052] As described above, according to the plasma source 2 and the plasma processing apparatus 1 of this embodiment, the ceramic member 31 made of yttria sintered body is provided at a location downstream of the gas flow where the conductance increases and the residence time increases, thereby improving corrosion resistance and effectively suppressing particle generation.

[0053] The plasma source and plasma processing apparatus according to the presently disclosed embodiments should be considered in all respects as illustrative and not restrictive. The embodiments can be modified and improved in various ways without departing from the spirit and scope of the appended claims. The features described in the above embodiments can be configured in other ways without contradiction, and can be combined without contradiction. [Explanation of symbols]

[0054] 1...Plasma processing device 2...Plasma source 10...Reactor 18...Substrate support part 20...Shower head 28...Supply port 30...Metal parts 31...Ceramics components 34...Stress buffer material 36...Chamber

Claims

1. a metal member having a supply port formed therein and constituting a wall defining an upstream flow of the processing gas supplied from the supply port; a ceramic member having an outlet formed therein and constituting a wall defining a downstream flow of the processing gas discharged from the outlet; a power supply unit that supplies power for generating plasma into the chamber, the chamber is composed of the metal member and the ceramic member, and is configured to discharge an activated gas generated by converting the processing gas into plasma to the outside of the chamber through the exhaust port; The metal member and the ceramic member are brazed to each other via a stress buffer material. Plasma source.

2. a metal member having a supply port formed therein and constituting a wall defining an upstream flow of the processing gas supplied from the supply port; a ceramic member having an outlet formed therein and constituting a wall defining a downstream flow of the processing gas discharged from the outlet; a power supply unit that supplies power for generating plasma into the chamber, the chamber is composed of the metal member and the ceramic member, and is configured to discharge an activated gas generated by converting the processing gas into plasma to the outside of the chamber through the exhaust port; A metal vapor deposition film is formed on the outer wall of the ceramic member. Plasma source.

3. a metal member having a supply port formed therein and constituting a wall defining an upstream flow of the processing gas supplied from the supply port; a ceramic member having an outlet formed therein and constituting a wall defining a downstream flow of the processing gas discharged from the outlet; a power supply unit that supplies power for generating plasma into the chamber, the chamber is composed of the metal member and the ceramic member, and is configured to discharge an activated gas generated by converting the processing gas into plasma to the outside of the chamber through the exhaust port; the metal member is configured to form a plurality of or an annular plasma generation flow passages branching from the supply port, The ceramic member is configured to form at least a confluence portion of the plurality of or annular plasma generation flow channels. Plasma source.

4. The ceramic member is a sintered body. A plasma source according to any one of claims 1 to 3.

5. The stress buffer material is brazed to the outer wall of the metal member and the inner wall of the ceramic member. The plasma source of claim 1 .

6. The stress buffer material is brazed to a lower end of the metal member and an upper end of the ceramic member. The plasma source of claim 1 .

7. The stress buffer is a spring-like member.

7. A plasma source according to claim 1, 5 or 6.

8. the spring-like member is a hollow member having an opening, The opening portion opens in the same direction as either the supply port or the discharge port.

8. The plasma source of claim 7.

9. the spring-like member is a hollow member having an opening, the opening portion opens in a direction different from a direction in which the supply port and the discharge port open.

8. The plasma source of claim 7.

10. The linear thermal expansion coefficient of the stress buffer material is equal to or greater than the linear thermal expansion coefficient of the ceramic member and equal to or less than the linear thermal expansion coefficient of the metal member. A plasma source according to any one of claims 1, 5, 6 to 9.

11. A metal vapor deposition film is formed on the outer wall of the ceramic member. A plasma source according to any one of claims 1, 3, 5 to 10.

12. the metal member is configured to form a plurality of or an annular plasma generation flow passages branching from the supply port, The ceramic member is configured to form at least a confluence portion of the plurality of or annular plasma generation flow channels. A plasma source according to any one of claims 1, 2, 5 to 10.

13. a plasma source having a chamber and configured to discharge an activated gas generated by converting a processing gas into plasma inside the chamber to the outside of the chamber through an exhaust port; a reactor communicating with the chamber, introducing the activation gas thereinto, and processing a substrate using the activation gas; The plasma source comprises: a metal member having a supply port formed therein and constituting a wall defining an upstream flow of the processing gas supplied from the supply port; a ceramic member in which the exhaust port is formed and which constitutes a wall that defines a downstream flow of the processing gas exhausted from the exhaust port; a power supply unit that supplies power for generating plasma into the chamber, the chamber is composed of the metal member and the ceramic member, The metal member and the ceramic member are brazed to each other via a stress buffer material. Plasma processing equipment.

14. a plasma source having a chamber and configured to discharge an activated gas generated by converting a processing gas into plasma inside the chamber to the outside of the chamber through an exhaust port; a reactor communicating with the chamber, introducing the activation gas thereinto, and processing a substrate using the activation gas; The plasma source comprises: a metal member having a supply port formed therein and constituting a wall defining an upstream flow of the processing gas supplied from the supply port; a ceramic member in which the exhaust port is formed and which constitutes a wall that defines a downstream flow of the processing gas exhausted from the exhaust port; a power supply unit that supplies power for generating plasma into the chamber, the chamber is composed of the metal member and the ceramic member, A metal vapor deposition film is formed on the outer wall of the ceramic member. Plasma processing equipment.

15. a plasma source having a chamber and configured to discharge an activated gas generated by converting a processing gas into plasma inside the chamber to the outside of the chamber through an exhaust port; a reactor communicating with the chamber, introducing the activation gas thereinto, and processing a substrate using the activation gas; The plasma source comprises: a metal member having a supply port formed therein and constituting a wall defining an upstream flow of the processing gas supplied from the supply port; a ceramic member in which the exhaust port is formed and which constitutes a wall that defines a downstream flow of the processing gas exhausted from the exhaust port; a power supply unit that supplies power for generating plasma into the chamber, the chamber is composed of the metal member and the ceramic member, the metal member is configured to form a plurality of or an annular plasma generation flow passages branching from the supply port, The ceramic member is configured to form at least a confluence portion of the plurality of or annular plasma generation flow channels. Plasma processing equipment.

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